TW518773B - Manufacturing method of white LED - Google Patents

Manufacturing method of white LED Download PDF

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Publication number
TW518773B
TW518773B TW090133508A TW90133508A TW518773B TW 518773 B TW518773 B TW 518773B TW 090133508 A TW090133508 A TW 090133508A TW 90133508 A TW90133508 A TW 90133508A TW 518773 B TW518773 B TW 518773B
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TW
Taiwan
Prior art keywords
led
white
blue
fluorescent powder
light
Prior art date
Application number
TW090133508A
Other languages
English (en)
Inventor
Hsing Chen
Original Assignee
Solidlite Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solidlite Corp filed Critical Solidlite Corp
Priority to TW090133508A priority Critical patent/TW518773B/zh
Priority to US10/174,816 priority patent/US20030124246A1/en
Application granted granted Critical
Publication of TW518773B publication Critical patent/TW518773B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Description

518773 五、發明說明（1) 前單顆白光LED的製作方法有兩種，一為以藍光晶 寺加YAG黃色螢光粉方式，主要生產者為日本日亞化學公 司’其台灣專利公告號為3835〇8號。 4 ί 一種為以紫外光晶粒加紅、藍、綠三基色螢光粉方 式使產生白光為本發明人所創台灣專利公告第385〇63號 缺點：ΐΐ一種方式以藍色晶粒加黃色螢光粉，其最大的 發出的白光波長只有兩波長，只有 因:此種方式所製作出來的白光僅適用於指示用，尚難 Ϊ由準照明用途或LCD彩色背光源用，另-缺點 偏藍或偏黃現象。 巾曰把取尤巴 第二種方式以紫外光激發三基色 ί者：理當最理想…，但就現實面而言目前：ij; U二率匕：=，粒出現，以目前紫外光led就以 曰本曰亞化學公司而言’其產生波長37inm功率也只有 〜m本豐田合成公司產生波長38 /難做出高功率紫外光⑽晶粒的理由為Ϊ 材料特性與製程的影響。 田馬又 另 '"""缺點為目前尚益紫外：il AA A » 有機樹脂都會吸收紫外s ?而造A ::，树月旨’大部分 劣化現象，將影響LED的壽命蛊σ :月曰文紫外光照射產生 本發明人從事白光LED研發^年㈣，±已取〜 項多國白光led專利相關專利，另在針對以上有關::二
518773 五、發明說明（2) 之缺失作進一步研究，並提出新構想且容易製造之一種白 光LED的製作方法，係以紫光（波長39〇〜41〇ηιη )來激發螢 光粉層使產生三波長白光LED。 本發明白光LED的製造方法，以選擇以波長390〜41 Onm 間f紫光來激發螢光粉產生白光，有別於先前技術以藍光 加黃色螢光粉（YAG )或用紫外光激發三基色螢光粉產生 三波長白光之技術。 本發明採用紫光的理由為在紫光範圍内美國的Cree公 司已可製作出波長390〜395 nm，發光功率高達2〇 mw以上之 L^D晶粒其發光效率與功率均比現今藍光或紫外光還要 高，另一因素為以紫光390〜410nm可被激發之螢光粉 (紅、藍、綠）均已被本人多次實驗後尋得，其中·· 紅色螢光粉可選用Y2〇2S : Eu，Gd 綠色螢光粉可選用ZnS : Cu，A1或(^“以2〇7 : π 藍色螢光粉可選用BaMgAl1Q017 : Eu 或（Sr、Ca、BaMg ) 10 (p〇4 ) 6C12 : Eu 將紅、藍、綠依適當的比例混合作調配即可得白光或 調各種色溫、色光。
518773 圖式簡單說明 茲例舉本案創作之實施例配合圖示說明如下； 圖號部分： 第一圖為傳統白光LED之支架封裝方法之結構圖。 第二圖為本發明白光LED之支架製造方法結構圖。 第三圖為本發明白光LED之支架製造方法另一結構圖。 第四圖為本發明白光LED之模鑄製造方法結構圖。 第五圖為本發明白光LED之光譜圖。 圖號部分： 1、 L E D晶粒 2、 三基色螢光粉 3、 封裝支架 4、 導線 5、 支架電極 6、 第一層膠 7、 環氧樹脂 8、 黃色螢光粉 9、 封裝基座 1 0、基座電極
518773 圖式簡單說明 =請參閱第二圖所示、t先將紅色、藍色、綠色三基 =，粉2 ’以適當比例作混合調配使能調配出以紫光激 先，其中白光又因客戶需求不同有要求色溫從 〇〜80隨的變化，亦可以調配紅、藍、綠三基 光粉 2的比例而達到。 將紫光LED晶粒1、固置於封裝支架3或封裝基板9上， ，以導線4分別連接LED晶粒i與支架電極5 (或基座電極丨〇 ) 和封裝支架3(或封裝基座9)，並將混合好之三基$
2直接或間接（第i、四圖所示）塗在紫光㈣晶粒上表面刀 上，利用紫光LED晶粒1產生之紫光激發在其表面之三某 螢光粉2，使產生紅、M、綠三波混合之土 圖光譜圖所示。 弟立 本發明之三基色螢光粉2紅色採用Y2〇2S:Eu，Gd綠色 螢光粉採用ZnS : Cu，A1或Ca2MgSi2〇7 : C1藍色螢光粉採 用 BaMgAl10〇17 :Eu 或（Sr、Ca、BaMg)i〇 (p〇4)6Ci2 :Eu 除了上述之螢光粉外尚有其他可用之螢光粉，但並不 代表本案發明只限用上述螢光粉，亦包括了其他可被紫光 波長（ 390〜410nm )範圍激發之螢光粉材料。 ” 過去螢光粉之研究均以254nm或365nm激發光為主，少 有本人研究以紫光激發源來產生白光者，因高功率紫光 LED晶粒1為近一年來才被開發出來，以高功率紫光“ 粒1來激發螢光粉產生白色光，仍為本人首先創作提出$ 方法，雖然它可能不是未來主流方法，但係目前 LED產生高亮度三波長最佳的選擇。

Claims (1)

  1. 5J^773
TW090133508A 2001-12-31 2001-12-31 Manufacturing method of white LED TW518773B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW090133508A TW518773B (en) 2001-12-31 2001-12-31 Manufacturing method of white LED
US10/174,816 US20030124246A1 (en) 2001-12-31 2002-06-20 White light LED production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW090133508A TW518773B (en) 2001-12-31 2001-12-31 Manufacturing method of white LED

Publications (1)

Publication Number Publication Date
TW518773B true TW518773B (en) 2003-01-21

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ID=27801644

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Application Number Title Priority Date Filing Date
TW090133508A TW518773B (en) 2001-12-31 2001-12-31 Manufacturing method of white LED

Country Status (2)

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US (1) US20030124246A1 (zh)
TW (1) TW518773B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100341163C (zh) * 2004-03-29 2007-10-03 宏齐科技股份有限公司 白光发光二极管单元
US7911127B2 (en) 2005-03-30 2011-03-22 Samsung Led Co., Ltd. Phosphor blend for wavelength conversion and white light emitting device using the same

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681987A (zh) * 2013-12-04 2014-03-26 广西玖典电子新材料有限公司 Led用荧光胶的调配方法
DE102015111379A1 (de) 2015-07-14 2017-01-19 Sick Ag Optoelektronischer Sensor
CN113178514B (zh) * 2016-05-20 2024-04-02 首尔半导体株式会社 白色光源

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
WO1998039805A1 (de) * 1997-03-03 1998-09-11 Koninklijke Philips Electronics N.V. Weisse lumineszenzdiode
US6068383A (en) * 1998-03-02 2000-05-30 Robertson; Roger Phosphorous fluorescent light assembly excited by light emitting diodes
US6653765B1 (en) * 2000-04-17 2003-11-25 General Electric Company Uniform angular light distribution from LEDs

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100341163C (zh) * 2004-03-29 2007-10-03 宏齐科技股份有限公司 白光发光二极管单元
US7911127B2 (en) 2005-03-30 2011-03-22 Samsung Led Co., Ltd. Phosphor blend for wavelength conversion and white light emitting device using the same

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US20030124246A1 (en) 2003-07-03

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