617407 修正 891?Μ71 五、發明說明（1) 發明領域 來制作二f利用多層架構，包括使用低溫共燒陶瓷技術 濾波器，增成表面黏著方式。本發明採 %，= :?使得在低於及高於通帶區的阻帶各有損耗極 衰读旦Τ在—倍頻·^，可藉著調整傳輸線的長度來改善 特性里力。t Π帶通濾波器具有低通帶損耗及高阻帶衰減 於輕薄短小之通訊模組：慮波。°的一刀之一，㈣適合用 【發明 通帶區 器需在 有很高 產生或 電路的 在 poles) 極點需 響通帶 發明在 較遠離 二倍頻 用多層 背景】 頻帶通濾波 信號通過， 通帶區具有 的信號衰減 由本身系統 非線性特性 電路設計上 來提升阻帶 置於離通帶 區的特性， 很靠近通帶 通帶區之低 帶處也有一 架構方式來 器常用 同時阻 復低的 量。阻 所造成 所引起 ’可以 區的衰 區很近 因此需 區之低 頻段阻 損耗極 實現， 於通訊模組最前端 隔阻帶區的信號， 信號衰減量，而在 帶區信號的來源可 ，其中，諧頻信號 〇 適當的加入損耗極 減量。在很多應用 的頻帶上，但過於 慎選濾波器材料及 =段阻帶具有一個 f具有另一個損耗 點。本發明之濾浊 整體濾波的 ，其作用為讓 因此帶通濾波 阻帶區則需具 由其他系統所 多為本身系統 點（1 〇 s s 裡，有些損耗 靠近會大大影 線路架構。本 損耗極點，在 極點，在接近 器非常適合利 體積非常小，617407 Amendment 891? M71 V. Description of the invention (1) Field of invention The use of multilayer structures, including the use of low temperature co-fired ceramic technology filters, to increase the surface adhesion method. In the present invention,%, =:? Are used to make the lossy poles in the stopbands below and above the passband region at -frequency multiplying, and the characteristics can be improved by adjusting the length of the transmission line. t Π bandpass filter has low passband loss and high stopband attenuation. For light, thin and short communication modules: consider wave. ° One size fits all, suitable for use [Invention of the passband device needs to have high generation or circuits at the poles] The pole needs a loud passband Invention of the multi-layer background farther away from the double frequency] The passband filter signal passes, the passband The signal attenuation in the region is designed by the non-linear characteristic circuit of the system itself to improve the characteristics of the stop band placed away from the pass band region. There is also an architectural method at the low band close to the pass band of the pass band region to block the low amount at the same time. . The attenuation area caused by the resistance is very close, so the low-frequency resistance loss of the area is extremely realized. The signal at the forefront of the communication module blocks the signal band, the amount of signal attenuation, and the source of the signal in the band can be. Among them, the harmonic frequency signal 0 is appropriately added and the loss is extremely reduced. In the frequency band of many applications, the filter material is chosen too carefully and the band stop band has one f and another loss point. The turbidity filtering of the present invention has the effect that the band-pass filtering stopband region needs to be provided by other systems as its own system point (in 10 ss, some losses are close to the line structure. This loss pole , At the pole, the proximity device is very suitable for the small volume,
0582-5900TWF3.ptc0582-5900TWF3.ptc
發明說明（2) 案號 89125972 五 此外’本發明濾波器的諧振器部分採用集 避免使用高介電常數材料來縮小尺寸，闲、、心式凡件，可以 成本。 口而大大降低微調 〔先前技術】 在美國專利6 1 1 4925號公報内提出 . 唐架構方式，雖然在阻帶區具有損耗極聲波/乃採用多 笮，且二倍頻帶的衰減也很差。 但阻帶頻寬很 在美：專二5608364號公報内提出的濾波 構方式，在低於通帶區附近的阻帶有—二乃採用多層架 於通帶區的阻帶衰減量报差，特別是在^極點，但在高 採用尚介電常數材料來縮小體積，需微調：頻帶，此外， 【發明之簡述】 本毛月所揭橥之帶通濾波器，乃 包栝2:於使用低溫共燒陶竟技術來構方式， …很靠近通帶㈡以3點’其中—個以 二製作上，其架構报容易】ίΐ; ’可延伸至 率提…幅降低微調成本。1…的目的，因而： 【圖式說明】 Ξι :)) Ϊ示ΐ發明高頻帶通濾波器的外觀、 明高頻帶通渡波器的』意圖 iiSi™—一·'圖 0582-5900TWF3.ptc 第6頁 517407 案號 89125971 %年？ 月么斗曰 f 4 7#日修正 五、發明說明（3) 圖（三）表示本發明高頻帶通濾波器内部結構示意圖 圖（四）表不本發明而頻帶通滤波|§的頻率響靡、圖。 【符號說明】 1 0 0〜為本發明之帶通濾波器的多層介質本體 101，1 02, 1 0 3, 1 04〜濾波器之外部電極 201，202〜一端為斷路之傳輸線 203〜柄合電容 20 4/20 6/208, 2 0 5/20 7/209 〜諸振器 30 1A，301 J〜濾波器的最底層及最上層介質 濾波 301B，301C，301D，301E，301F，301G，301H，301I 〜 器的内部介質層 3 0 2A，3 0 2B，3 0 2C，3 0 2D〜濾波器的底層外部電極 3 0 2E，3 0 2F，3 0 2G，3 0 2H〜濾波器的上層外部電極 303, 310, 313〜内部接地金屬 311，312〜構成一端為斷路之傳輪線的内部金屬 306，307〜構成搞合電容之内部金屬 304/305, 308/309〜構成諸振器電感之内部金屬 314〜via，用以連接不同層之内部金屬 3 1 5，3 1 6〜構成諧振器電容之内部金屬 【發明之說明】 本發明為一個利用多層架構，包括但不限於使用低溫 共燒陶堯技術來製作的帶通濾波器，整體濾波器可製作成 表面黏著方式。 <Explanation of the invention (2) Case No. 89125972 5 In addition, the resonator part of the filter of the present invention adopts a collection, avoiding the use of high dielectric constant materials to reduce the size, and the spare parts can be cost-effective. Fine tuning is greatly reduced. [Prior art] It is proposed in US Patent No. 6 1 4925. The Tang architecture method, although it has a lossy acoustic wave in the stopband area, uses multiple chirps, and the attenuation in the double frequency band is also poor. But the stopband bandwidth is very beautiful: the filtering structure proposed in the Special Publication No. 5608364 is lower than the stopband near the passband area-the second is that the stopband attenuation of the passband area is reported by multiple layers. Especially at ^ pole, but in high dielectric constant materials to reduce the volume, fine adjustment is needed: In addition, [Brief description of the invention] The band-pass filter disclosed by Mao Maoyue is as follows: Use low temperature co-firing ceramics to build the way,… very close to the passband, 3 points, one of which can be made in two, and its structure is easy to report] ΐ ';' can be extended to improve the rate ... to reduce the cost of fine-tuning. The purpose of 1 ... Therefore: [Schematic description] Ξι :)) ΪIndicates the appearance of the invention of the high-frequency band-pass filter, and the intention of the high-frequency band-pass wave filter iiSi ™ — 一 · 'Figure 0582-5900TWF3.ptc Page 517407 Case No. 89125971% Years? Yue Modou said f 4 7 # Day Amendment V. Description of the invention (3) Figure (3) Schematic diagram showing the internal structure of the high-band pass filter of the present invention (4) The frequency of the band-pass filter | Figure. [Explanation of symbols] 1 0 0 to the multilayer dielectric body 101, 1 02, 1 0 3, 1 04 of the band-pass filter of the present invention, external electrodes 201, 202 of the filter, and a transmission line 203 to a closed end at one end Capacitors 20 4/20 6/208, 2 0 5/20 7/209 ~ Oscillators 30 1A, 301 J ~ Lowest and top dielectric filters for filters 301B, 301C, 301D, 301E, 301F, 301G, 301H 301I ~ internal dielectric layer of the device 3 0 2A, 3 0 2B, 3 0 2C, 3 0 2D ~ bottom external electrode of the filter 3 0 2E, 3 0 2F, 3 0 2G, 3 0 2H ~ upper layer of the filter External electrodes 303, 310, 313 ~ Internal ground metal 311, 312 ~ Internal metal 306, 307 which constitutes an open transmission line at one end ~ Internal metals 304/305, 308/309, which constitute a coupling capacitor ~ Oscillator inductors The internal metal 314 ~ via is used to connect the internal metal of different layers 3 1 5, 3 1 6 ~ the internal metal constituting the resonator capacitor [Explanation of the invention] The present invention is a multi-layer architecture, including but not limited to the use of low temperature common The band-pass filter produced by burning Tao Yao technology, the overall filter can be made into a surface adhesion method. <
第7頁 517407 _1號 8912M71 五、發明說明（4) 圖（一）為本發明之帶通濾波器的外觀示意圖，其中 100為多層介質本體，内部金屬經由引出端與外部之端電 極（1 0 1，1 0 2，1 〇 3，1 0 4 )相連，端電極經一般的電鍵程序 後可作為濾、波器之輸入/輸出及接地之用。 、圖（一）為本發明之帶通渡波器的等效電路圖，包括一 端為斷路之傳輸線（201，202 )、耦合電容（2〇3)及諧振器 (204/206/208 ， 205/207/209)。其中，諧振器2〇4/2〇6/ 208與20 5/207/209提供在低於通帶區的二個損耗極點，一 端，斷路之傳輸線（201，202 )提供在接近於二倍頻的另一 個知耗極點。2 1 0與2 11為濾波器的輸入及輸出端，對應於 圖（一）的端電極（101，1〇2，103，104)，例如21〇對應於' 1 0 1，2 11對應於1 〇 2，其餘端電極（1 〇 3，1 〇 4 )則作為接地 之用，然而，每一端電極是作為輸入、輸出或接地之用， 可依實際設計及電路怖局所需來調整。 圖（二）為本發明之帶通濾波器的内部結構圖，本結 由多層介質（301A ， 301B ， 301C ， 301D ， 301E ， 301F ，° 301G，301H，301I，301J)及金屬網印在介質上所組成， 外η夤層3 0 1 A與3 0 1 J分別為濾波器的最底層及最上層，可 在其表面經由端電極製作程序而形成外部電極，内&所 301B/3 01C/301D/3 01E/301F/301G/301H/301I 可配合金貝屬曰 網印於各層表面而成為為傳輸線（2〇1，2〇2)、輕合電☆ (203)及諧振器（204/206/208 ,205/207/209)。組成濟沽 器所需之介質層數及其介電常數則依實際設計所需來^ 整，一般在作為電容層時可選擇高介電常數材料或尸^ 薄之材料’而作為電感層時則可選擇低介電常^材：：, 第8頁 0582-5900TWF4.ptc 案號 89125971 五、發明說明（5) 517407 —年月 曰 度較厚之材料。外部電極由302A/3 02B/302C/302d/3()2e/ 302F/302G/302H所組成，其中，302A 與 302E、302B與 302F、302C與302G、302D與302H經由外部端電極製作程序 而連接在一起’内部接地金屬303/310/313亦以此方式與 外部接地端電極（ 30 2A/302E，302B/30 2F)構成局部相連'。 一端為斷路之傳輸線201及202，分別由金屬311及312與上 下接地面金屬3 1 0及3 1 3所構成之傳輸線，傳輸線之另一端 則藉端電極製作程序而與外部端電極（3〇2C/30 2G， 302D/302H)連接在一起；耦合電容2〇3由金屬30 6/307所構 成，金屬306及307的一端亦以端電極製作程序而與外部端 電極（ 302C/302G，302D/302H)連接在一起；諧振器電感 208及209分別由金屬線圈304/305及308/309所構成，不同 層的金屬線圈藉著v i a (例如3 1 4 )相連，金屬線圈的一端接 地，可藉端電極製作方式接至外部之接地端電極 ( 30 2A/302E、30 2B/3 0 2F);諧振器電容204及205分別由金 屬306/315及307/316所構成，此外，譜振器電容2〇6及2〇7 分別是金屬線圈304/305及308/309與内部接地金屬（303、 3 1 0)之間所形成之雜散電容，詳如圖（三）所示。 0582-5900TWF4.ptc 第9頁 1Page 7 517407 _1 No. 8912M71 V. Description of the invention (4) Figure (1) is a schematic diagram of the appearance of the band-pass filter of the present invention, in which 100 is a multilayer dielectric body, and the internal metal is connected through the lead-out terminal and the external terminal electrode (1 0 (1, 10, 2, 10, 104)), and the terminal electrode can be used as the input / output and grounding of the filter, waver after the general key program. Figure (1) is an equivalent circuit diagram of the band-passing wave filter of the present invention, which includes a transmission line (201, 202) with an open circuit at one end, a coupling capacitor (203), and a resonator (204/206/208, 205/207). / 209). Among them, the resonators 204/206/208 and 20 5/207/209 provide two loss poles below the passband region. One end, the open transmission line (201, 202) is provided at a frequency close to the double frequency. Another knowledge consumption pole. 2 1 0 and 2 11 are the input and output ends of the filter, corresponding to the terminal electrodes (101, 102, 103, 104) in Figure (1). For example, 21 0 corresponds to '1 0 1, 2 11 corresponds to 10, the other terminal electrodes (103, 104) are used for grounding, however, each terminal electrode is used as input, output or ground, which can be adjusted according to the actual design and circuit requirements. Figure (2) is the internal structure diagram of the band-pass filter of the present invention. This knot consists of multilayer dielectrics (301A, 301B, 301C, 301D, 301E, 301F, ° 301G, 301H, 301I, 301J) and metal screens printed on the dielectric. The outer η 夤 layers 3 0 1 A and 3 0 1 J are the bottom and top layers of the filter, respectively, and external electrodes can be formed on the surface through a terminal electrode manufacturing process. The inner & 301B / 3 01C / 301D / 3 01E / 301F / 301G / 301H / 301I can cooperate with Jinbei to print on the surface of each layer to become a transmission line (201, 202), light-sealed electricity ☆ (203), and a resonator (204 / 206/208, 205/207/209). The number of dielectric layers and their dielectric constants required to form the device are adjusted according to the actual design requirements. Generally, when the capacitor layer is used, a high dielectric constant material or a thin material is used as the inductor layer. Then you can choose low dielectric constant materials: ,, page 8 0582-5900TWF4.ptc case number 89125971 V. Description of the invention (5) 517407 — thicker material. The external electrode is composed of 302A / 3 02B / 302C / 302d / 3 () 2e / 302F / 302G / 302H. Among them, 302A and 302E, 302B and 302F, 302C and 302G, and 302D and 302H are connected through an external terminal electrode creation program. Together, 'internal ground metal 303/310/313 also forms a partial connection with external ground terminal electrodes (30 2A / 302E, 302B / 30 2F) in this way'. One end is a broken transmission line 201 and 202, which is a transmission line composed of metals 311 and 312 and upper and lower ground plane metals 3 1 0 and 3 1 3, respectively. The other end of the transmission line is connected to the external terminal electrode (3〇) by a terminal electrode manufacturing process. 2C / 30 2G, 302D / 302H) are connected together; the coupling capacitor 203 is composed of metal 30 6/307, and one end of metal 306 and 307 is also connected to the external terminal electrode (302C / 302G, 302D) through the terminal electrode manufacturing process. / 302H) are connected together; the resonator inductors 208 and 209 are respectively composed of metal coils 304/305 and 308/309. The metal coils of different layers are connected by via (for example, 3 1 4). One end of the metal coil is grounded and can be Connected to the external ground terminal electrode (30 2A / 302E, 30 2B / 3 0 2F) through the terminal electrode manufacturing method; the resonator capacitors 204 and 205 are composed of metal 306/315 and 307/316, respectively. In addition, the spectrum oscillator Capacitors 206 and 207 are stray capacitances formed between the metal coils 304/305 and 308/309 and the internal ground metal (303, 3 1 0), as shown in Figure (3). 0582-5900TWF4.ptc Page 9 1