513564 五、發明説明（1) 技術領域 本發明涉及一種用於確定在一種物體表面，特別是 在一種半導體晶圓的表面是否有缺陷的光學檢查的方法 和裝置。 技術發展現狀 在工業用部件、特別是半導體部件及/或用於這種半導 體部件的半成品之自動化生產中，一種可靠的品質控制 需要一種特別高之調整値。例如，在製造半導體元件以 及在生產作爲半成品用之晶圓時即須如此。這些晶圓至 少在其表面之區域中必須無該切鋸過程之後可能發生之 貝殼式爆裂且表面中或表面上不可存在微粒或類似物。 重要的是，藉由光學檢測之此種品質控制過程中，所使用之 裝置及方法應儘可能不干擾此製程之機構且可整合在此 機構中。 在已知的方法中，通常被測物體的表面應越大。例 如方法之一是採用光斜入射物體表面的人工目視測試。 這是以入射方向的一種可擺動方式而入射到這一表面上 。借助一種逐行掃描器（z e i 1 e n R a m e r a)亦可實現對物體 主要部分進行自動檢驗，同時對該表面進行逐行掃描。 這樣得到的行列的圖片數及圖像寬度產生各行掃描單元 的圖片解析度。典型的解析度在40 μηι。 很顯然，常用的自動檢驗方法，在檢驗時採用了兩 維分辨掃描器對被測試的物體表面進行掃描。同時當照 明變化達不到表面的高度解析度時，可借助雷射器發光 513564 五、發明説明（2) 射線對物體表面進行掃描，致使物體與雷射射線進行高 速對比相互移動。 用於晶圓表面的自動檢驗還被視爲技術水平最爲先 進的方法。該方法是採用二維分辨掃描器來檢驗的。 對本發明的描述 本發明的最主要目的是：要提供一種專門用於生產 過程的，能迅速而可靠工作的裝置。採用該裝置須對被 測試的一種物體表面進行測試具有十分高的解析度，此 裝置特別之處是這樣設計的，即，可使在需要進行核對 總和維修保養之間以及在調整及重新調整之間的時間間 隔盡可能短。因而，以儘量避免生產半導體部件的連續 生產過程的中斷。 根據申請專利範圍第1項，其中闡述了實現此目的 之裝置及其生產方法。其它形式描述在申請專利範圍各 附屬項中。 本發明的基本出發點是爲檢驗一物體，例如對晶圓 .表面的缺陷進行光學檢驗，本發明的裝置是特別適合的 。用這種裝置可對表面作成行的、單行的或多行的掃描 ，裝置借助一種合適的並且成熟的掃描攝像機進行掃描 。這樣一種掃描攝像機是帶有附加的顯微鏡-鏡片的測 量頭部分。種顯微鏡-鏡片可設置在攝像機與物體之間 的間隔中，該裝置的定位系統用於實施物體和測量頭對 比而相互有選擇的移動。此外是一種特殊的光測照明系 統。採用這種光測照明系統適用於有選擇的明光操作， -4- 513564 五、發明説明（3) 暗場操作及或透明光操作。依據本發明的裝置可根據設 定的位置來進行調節。 對本發明的裝置還應特別指出，所述照明系統以特 殊方法構成。 在先前技藝中，照明系統由於高強度要求而使用鹵 素燈。由於高照明強度的鹵素燈使用壽命很短，因此這 種燈須隨時更換。更換燈需要耗費時間，因此千擾了生 產過程的進度。而本發明裝置的照明系統對此預先作了 考慮，作爲帶光源的照明系統至少應配備一種發光的半 導體二極體。但這種發光的半導體二極體是以下述方式 形成和工作的，即，它發射出近似雷射的光。近似雷射 的光其定義爲：它的光譜分佈係處於一窄的波長範圍△ λ = + /-1/20 λ之內。此λ相等於光的波長。從半導體二 極體的半導體物體的光發射面中輻射的發射角處於小於 /相等於+/-1〇°的範圍。同時在發射角的界限上光強 度値相同，在出射光束的中心，爲強度最大値的一半強 度。因此，這種近似雷射的光即爲處於激發範圍的光。 這一範圍即已處於接近雷射光束產生的激發入射的範圍 。在本發明裝置的照明系統的光源的多個半導體二極體 的操作中，此類二極體的發光呈單維延伸的排列，也就 是呈一線狀或面狀分佈。如上所述，這種照明系統具有 至少數小時的生產持續時間。因此，上述的影響生產的 維修保養調節的間隔時間沒有了，因而避免了生產過程 的中斷。. 513564 五、發明説明（4) 根據本發明所採用的照明系統，能用於明場操作、 暗場操作及也可能用於光學成像所用顯微鏡的透視光的操 作。在裝置中可能預先設定和規定一個或多個裝有近似 雷射的光的半導體二極體的照明系統。採用按本發明設 定的照明系統可實現所有先進的照明上部結構和類型， 參見其結構和第1圖中的說明。 裝置的主要部件在於特殊的轉體結構，即，設定的 物鏡的裝置和顯微鏡-光學裝置。正如大家所瞭解的， 物鏡能使轉體的轉動轉入顯微鏡的光框，使之實現顯微 鏡的眾所周知的明場操作、暗場操作的照明，這種顯微 鏡包括一普通的分光器。正如也是眾所周知的，借助於 顯微鏡中固有的分光器在與顯微鏡的光軸的照明場束的 共軸校準準時達到明場操作的照明。顯微鏡中照明場束 呈軸向的，這就產生所述的暗場操作的照明。光相加和 交替地在顯微鏡外部借助本發明的照明系統所設定的斜 射照明，即，衍射入顯微鏡，以利於顯微鏡光軸的入射 角直接到物體表面受測試的部位。這就是所謂顯微鏡操 作用的暗場照明。 透光照明的方法可通過下述方法來實現。 本發明的照明系統的照明強度控制是可以進行調節 的。特別是可以對設定光強度進行平穩地調節，在設定 的多個發光的半導體二極體時，可通過對二極體電流調 節可達到所需光亮強度。還可以開啓一個或多個照明系 統的半導體二極體的一組二極體，使照明系統在一定限 -6- 513564 五、發明説明（5) 度之內變化其單射光束角。例如通過接通和斷開的一並 聯的半導體二極體，使照明系統通過光程角度的變化變 得更爲有利。 圖示之簡單說明 第1圖爲本發明的裝置的結構工作原理。 第2圖所示爲投射到表面的光束行程，其從本發明 的照明系統開始且入射至投影面上之物體表面及繼續至 掃描攝像機。 本發明裝置正如按第1圖中1表示。第2圖中所示 的包括了帶顯微鏡片的顯微鏡。這是一台標準的顯微鏡 ，在顯微鏡2中所謂的鋼質分光器或光束分離器爲3， 圖中40表示本發明的照明系統，41至43表示其他可 供選擇的（如，亦可替代系統40)所設定的照明系統。5 表示掃描攝像機。6表示表面檢測裝置，以及7表示在 此每次掃入的圖形類型及例如標準類型的定位系統，特 別是顯微鏡2還包括了標準的一個轉體結構2 1，其中 裝有多個物鏡，從照明系統4 0發出的近似雷射1 4 0側 向地進入顯微鏡2，並在光束分離器3中將平行於顯微 鏡投影的光束偏轉至物體1 0的表面，這對應於習知的 明場照明，在光束分離器3中的偏折輻射器1 4 0，在與 顯微鏡鏡片的光軸1 〇 〇的角度中照射到物體1 0的受測 試的表面。暗場照明，較佳是近似於明場照明，圖中 4 1至4 3的照明系統是傾斜發射至1 4 1至1 4 3的近似雷 射，而且圖中可明顯地看到選擇不同角度照射到物體 513564 五、發明説明（6) 1 〇的表面，同樣，借助顯微鏡作用’可實現暗場照明 。1 44表示爲透光操作下的照明及其系統44的近似雷 射的輻射，相對於顯微鏡2的光軸1 00而傾斜入射的這 種輻射144(圖中未示出）會再次造成物體的暗場照明， 爲了實現透光的操作，例如在紅外線區域選擇這樣的波 長，則對這種物體而言至少是廣泛可透光的。 第2圖所示的爲本發明所佈置的照明系統40，爲了 達到如本發明所述該物體1 〇之與圖式平面相重合的表 面之單行或平行之多列之照明，須設定一種所謂的圓柱 形-光學裝置或透鏡20，這種光學裝置擴展了從照明系 統射出的輻射1 40到所圖示的和所闡述的照明列240， 採用適合的光學透鏡系統1 20也能對物體1 0的照明列 240可借助半導體二極體的特定輻射而進行一種二維的 光學成象（借助定位系統7連續完成），在面對照明系統 40的輻射140的線性形式之列240的位置移動，通過 物體1 0上的雙箭頭1 7來表示，即對第2圖中所表示的 物體1 〇表面掃描。用L表示已照明的列之長度，該長 度瞬間與本發明裝置所表示的物體1 0的表面部分的寬 度相等。 圖中340表示的是有關照明系統的光或輻射的半導 體二極體，這種半導體二極體經適當測量的饋電來操作 ，即如上文所述，在近似雷射的輻射範圍中工作，使所 發射的輻射極強地聚束。同時在輻射的照明場中還要避 免出現粒化作用’即，這就像由於真正相參的雷射光束 513564 五、發明説明（7) 之內出現干擾的情況一樣。本發明所使用的近似雷射的 發射是一種本身尙不相參的光線束。 測定由攝像機5每次所拍攝的圖像之評估按習知之 原則在測定裝置6中進行。使用的攝像機主要是一種 CCD —掃描攝像機。 借助於本發明所設定的雷射照明及近似雷射的照明 ，可產生光線或是在物體1 0的表面上產生任意多道相 鄰平行的光線，這樣一種光線在實際中可能達 L = 3〇Omm長，例如在巨觀（macro)檢驗時，顯微鏡攝影 適用於光線的長度僅限定在幾毫米之內。特別由於至少 近似雷射特性，則在照明系統4 0至44，按本發明所採 用的光線的列240頻寬b的方向中可達到淸晰的光束 ’而光線的頻寬這一數値對解析度而言是重要的，可於 較小的範圍中測定。 本發明的裝置’特別適用於一種使用單維拍攝的掃 描攝像機所設定的定位系統。 這種掃描攝像機是一種帶單維的C C D陣列。 -9·513564 V. Description of the invention (1) TECHNICAL FIELD The present invention relates to a method and an apparatus for optical inspection for determining whether a defect is present on a surface of an object, particularly a semiconductor wafer. Status of technological development In the automated production of industrial components, especially semiconductor components and / or semi-finished products for such semiconductor components, a reliable quality control requires a particularly high adjustment 値. This is required, for example, in the manufacture of semiconductor components and in the production of wafers for semi-finished products. These wafers must be free of shell-like bursts that can occur after the sawing process in at least the area of their surface, and there must be no particles or the like in or on the surface. It is important that in such quality control processes by optical inspection, the devices and methods used should be as non-interfering as possible to the mechanism of the process and can be integrated into this mechanism. In known methods, the surface of the object to be measured should generally be larger. For example, one method is artificial visual testing using oblique incident light on the surface of an object. This is incident on this surface in a swingable manner in the direction of incidence. With the help of a progressive scanner (z e i 1 e n R a m e r a), the main part of the object can also be automatically inspected, and the surface can be scanned progressively. The number of pictures and the image width of the rows and columns thus obtained produces the picture resolution of each line scanning unit. Typical resolution is 40 μηι. Obviously, the commonly used automatic inspection method uses a two-dimensional resolution scanner to scan the surface of the object under test. At the same time, when the illumination changes can not reach the high resolution of the surface, the laser can be used to emit light. Automatic inspection of wafer surfaces is also regarded as the state-of-the-art method. This method is verified using a two-dimensional resolution scanner. DESCRIPTION OF THE INVENTION The main object of the present invention is to provide a device which can be used quickly and reliably for a production process. The use of this device requires a very high resolution to be tested on the surface of an object being tested. This device is special in that it is designed so that it can be adjusted between reconciliation and maintenance, and adjusted and readjusted. Keep the time interval as short as possible. Therefore, to avoid interruption of the continuous production process for producing semiconductor components as much as possible. According to item 1 of the scope of patent application, the device for achieving this purpose and its production method are explained. Other forms are described in the appendixes to the scope of the patent application. The basic starting point of the present invention is to inspect an object, such as an optical inspection of a wafer. Surface defects, the device of the present invention is particularly suitable. This device can be used to scan the surface in rows, single rows or multiple rows. The apparatus scans with a suitable and mature scanning camera. Such a scanning camera is a measuring head part with an additional microscope-lens. This kind of microscope-lens can be placed in the space between the camera and the object, and the positioning system of this device is used to implement the comparison between the object and the measuring head to make selective movements with each other. In addition, it is a special photometric lighting system. Using this photometric illumination system is suitable for selective bright light operation. 513 564564 V. Description of the invention (3) Dark field operation and / or transparent light operation. The device according to the invention can be adjusted according to the set position. It should also be pointed out that the device according to the invention is constructed in a special way. In prior art, lighting systems used halogen lamps due to high intensity requirements. Due to the short life of high-intensity halogen lamps, they must be replaced at any time. Replacing the lamps takes time and therefore disturbs the progress of the production process. The lighting system of the device of the present invention takes this into consideration in advance. As a lighting system with a light source, at least one kind of light-emitting semiconductor diode should be provided. However, such a light-emitting semiconductor diode is formed and operated in such a manner that it emits approximately laser light. Approximate laser light is defined as: its spectral distribution is within a narrow wavelength range Δ λ = + / -1 / 20 λ. This λ is equal to the wavelength of light. The emission angle radiated from the light emitting surface of the semiconductor object of the semiconductor diode is in a range less than / equal to +/- 10 °. At the same time, the light intensity 値 is the same at the limit of the emission angle, and at the center of the outgoing beam, it is half the intensity of the maximum 値. Therefore, this approximate laser light is light in the excitation range. This range is already close to the range of excitation incidence generated by the laser beam. In the operation of a plurality of semiconductor diodes of the light source of the lighting system of the device of the present invention, the light emission of such diodes is arranged in a one-dimensionally extending manner, that is, in a linear or planar distribution. As mentioned above, this lighting system has a production duration of at least several hours. Therefore, the above-mentioned maintenance and adjustment interval that affects production is gone, thereby avoiding interruption of the production process. 513564 V. Description of the invention (4) The illumination system used according to the present invention can be used for bright field operation, dark field operation, and also for the operation of perspective light of a microscope used for optical imaging. One or more lighting systems of semiconductor diodes equipped with approximately laser light may be preset and specified in the device. All advanced lighting superstructures and types can be realized with the lighting system set according to the invention, see its structure and the description in figure 1. The main components of the device are a special swivel structure, that is, a device for setting the objective lens and a microscope-optical device. As everyone knows, the objective lens can turn the rotation of the swivel into the light frame of the microscope, so that it can realize the well-known bright field operation and dark field operation of the microscope. This microscope includes a common beam splitter. As is also well known, bright-field operation illumination is achieved on time with the coaxial alignment of the illumination field beam with the optical axis of the microscope by means of a beam splitter inherent in the microscope. The illumination field beam in the microscope is axial, which produces the described dark field operation illumination. The light addition and the alternately the oblique illumination set by the illumination system of the present invention outside the microscope, that is, diffract into the microscope to facilitate the incident angle of the optical axis of the microscope directly to the part of the object surface to be tested. This is the so-called dark field illumination of the microscope. The method of transmitting light can be realized by the following method. The lighting intensity control of the lighting system of the present invention can be adjusted. In particular, the set light intensity can be adjusted smoothly. When a plurality of light emitting semiconductor diodes are set, the required light intensity can be achieved by adjusting the diode current. It is also possible to turn on a group of diodes of one or more semiconductor diodes of the lighting system, so that the lighting system changes its single-beam angle within a certain limit of 6-513564 V. Description of the invention (5). For example, by turning on and off a semiconductor diode in parallel, the lighting system can make the light path angle change more favorable. Brief Description of the Drawings Figure 1 shows the structure and working principle of the device of the present invention. Figure 2 shows the beam path projected onto the surface, which starts from the illumination system of the present invention and is incident on the surface of the object on the projection surface and continues to the scanning camera. The device according to the invention is shown as 1 in Fig. 1. The microscope shown in Figure 2 includes a microscope with a microscope plate. This is a standard microscope. In the microscope 2, the so-called steel beam splitter or beam splitter is 3. The figure 40 represents the lighting system of the present invention, and 41 to 43 represent other alternatives (for example, it can also be replaced. System 40). 5 indicates the scanning camera. 6 indicates the surface detection device, and 7 indicates the type of pattern scanned in each time and the positioning system such as the standard type, in particular, the microscope 2 also includes a standard rotating structure 2 1 in which a plurality of objective lenses are installed, from The approximate laser 14 emitted by the illumination system 40 enters the microscope 2 laterally and deflects the light beam parallel to the microscope projection to the surface of the object 10 in the beam splitter 3, which corresponds to the conventional bright-field illumination. The deflection radiator 1 40 in the beam splitter 3 irradiates the tested surface of the object 10 at an angle of 1000 to the optical axis of the microscope lens. Dark field illumination is preferably similar to bright field illumination. The illumination systems of 4 1 to 4 3 in the figure are approximate lasers that emit obliquely to 1 4 1 to 1 4 3, and it can be clearly seen in the figure that different angles are selected. Irradiate the object 513564 5. The surface of invention description (6) 1 0. Similarly, dark field illumination can be achieved by the action of a microscope. 1 44 indicates the approximate laser radiation of the illumination and its system 44 under the light transmission operation. Such radiation 144 (not shown) which is obliquely incident with respect to the optical axis 100 of the microscope 2 will again cause the In order to realize the light-transmitting operation in dark field illumination, for example, selecting such a wavelength in the infrared region is at least widely transparent to such objects. Figure 2 shows the lighting system 40 arranged according to the present invention. In order to achieve single-row or multiple-row parallel lighting of the surface of the object 10 that coincides with the graphical plane according to the present invention, a so-called Cylindrical-optical device or lens 20, this optical device extends the radiation 1 40 emitted from the lighting system to the illustrated and illustrated lighting column 240. The object 1 can also be used with a suitable optical lens system 1 20 The illumination column 240 of 0 can be subjected to a two-dimensional optical imaging by the specific radiation of the semiconductor diode (continuously completed by the positioning system 7), and moved in the position of the column 240 of the linear form facing the radiation 140 of the illumination system 40 It is indicated by the double arrow 17 on the object 10, that is, the surface of the object 10 shown in FIG. 2 is scanned. Let L denote the length of the illuminated column, which is instantly equal to the width of the surface portion of the object 10 represented by the device of the present invention. 340 in the figure represents a semiconductor or diode for the light or radiation of the lighting system. This semiconductor diode is operated with a suitably measured feed, that is, as described above, operating in a range of approximately laser radiation, Focuses the emitted radiation extremely strongly. At the same time, it is necessary to avoid the granulation effect in the radiated lighting field, that is, it is the same as the situation in which the interference occurs within the description of the invention (7). The near-laser emission used in the present invention is a beam of light that is non-coherent. The evaluation of each measurement of the image taken by the camera 5 is performed in the measuring device 6 according to conventional principles. The camera used is mainly a CCD-scanning camera. With the laser illumination and laser-like illumination set by the present invention, light can be generated or any number of adjacent parallel rays can be generated on the surface of the object 10. Such a light may reach L = 3 in practice. 〇 0mm length, for example, in macro inspection, the length of light suitable for microscopy is limited to a few millimeters. Especially due to at least approximate laser characteristics, a clear beam can be achieved in the illumination system 40 to 44 in the direction of the column 240 bandwidth b of the light beam used in accordance with the present invention, and the bandwidth of the light beam is a number of pairs. Resolution is important and can be measured in a small range. The device of the present invention is particularly suitable for a positioning system set using a scanning camera for single-dimensional shooting. This scanning camera is a CCD array with a single dimension. -9·