511186 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 發明領域·· 本發明係有關於一種半導體元件隔離結構的製造方 法’且特別有關於一種淺溝渠隔離（STI)結構的製造方法， 可使淺溝渠隔離結構具有圓潤的角落（corner)。 發明背景： 元件隔離結構一般是用來防止可移動的載子（carriers) 從一個半導體元件經由基底流動到週邊的元件。傳統上， 70件隔離結構係形成在密集的半導體電路（如動態隨機存 取έ己憶體’ DRAM)中相鄰的場效電晶體之間。這些元件隔 離結構能夠降低從場效電晶體漏出的電荷。一般，元件隔 離結構是利用矽的區域氧化（L〇C〇S)技術在半導體基底上 形成一層延伸的厚氧化矽層。當L0C0S技術逐漸成熟，可 獲得低成本且高度穩定元件隔離結構。然而，以L0C0S方 式形成之隔離結構會造成許多的問題，包括可能產生大的 内部應力、在場氧化層周圍造成鳥嘴（bird，s beak)侵蝕等。 特別是，當元件縮小時，鳥嘴侵蝕區域將相對地變大，使 得用於隔離元件的L 0 C 0 S場氧化層無法彈性地使用。 當積體電路的元件密度增加，電路或元件之間的隔離 變顯得重要。一般，在先進積體電路技術中，電路元件的 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公f ) i ϋ— n ϋ n tme fti n *_»1 IB if ϋ I .0 tj n ϋ II n n n 一：. n n IV n n ti ϋ t (請£閱讀背面之注意事項再填寫本頁) 511186511186 Printed by A7 B7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs 5. Description of the Invention () Field of the Invention The present invention relates to a method for manufacturing a semiconductor element isolation structure ', and particularly to a shallow trench isolation (STI) structure. The manufacturing method can make the shallow trench isolation structure have rounded corners. BACKGROUND OF THE INVENTION: Element isolation structures are generally used to prevent mobile carriers from flowing from a semiconductor element to a peripheral element via a substrate. Traditionally, 70 isolation structures are formed between adjacent field-effect transistors in dense semiconductor circuits (such as dynamic random access memory DRAM). These element isolation structures reduce the charge leakage from the field effect transistor. Generally, the device isolation structure uses a silicon area oxidation (LOCOS) technology to form an extended thick silicon oxide layer on a semiconductor substrate. As L0C0S technology matures, low-cost and highly stable component isolation structures can be obtained. However, the isolation structure formed by the L0C0S method will cause many problems, including the possibility of generating large internal stress, and causing bird, s beak erosion around the field oxide layer. In particular, when the element is reduced, the bird's beak erosion area will be relatively large, making the L 0 C 0 S field oxide layer used to isolate the element unusable elastically. As the component density of integrated circuits increases, the isolation between circuits or components becomes important. Generally, in advanced integrated circuit technology, the paper size of the circuit components is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 male f) i ϋ— n ϋ n tme fti n * _ »1 IB if ϋ I. 0 tj n ϋ II nnn one:. Nn IV nn ti ϋ t (Please read the notes on the back and fill in this page) 511186
隔離以淺溝渠的型式形 、s木山 主八形成，通常先蝕刻半導體基底，然後 填入絕緣材料，例如县-签 疋一乳化矽。熟習此技藝者通常稱這 些填有，巴、表材料的溝渠為淺溝渠隔離結構。 STI結構的形成通常是先在半導體基底上沉積一層氮 化矽層’然後圖案化此氮化矽層形成硬罩幕。接著蝕刻基 底，在相鄰的70件之間形成陡峭的溝渠。最後，在溝渠中 填入氧化物形成元件隔離結構。 在形成陡峭的溝渠時，通常是使用非等向性電漿乾臺 刻移除不需要的部分。然而，經常會發生電漿破壞，產3 大量的蝕刻缺陷。而且，具有尖銳角落的陡峭溝渠也會琴 致角落寄生漏電流（corner parasitic leakage)，因而降低 的隔離特性。 雖然STI製程比LOCOS製程擁有較佳的隔離特性，然 而STI製程必須受限於電漿乾蝕刻造成的大量缺陷，以及 尖銳溝渠角落效應（corner effect)。因而，需要發展新的製 程可以有效地解決上述的問題。 -------------裝·-------訂· (請C閱讀背面之注意事項再填寫本頁) 線 經濟部智慧財產局員工消費合作社印製 中 景 背 明 : 發 述 之 概 述 及 上 的 於 目 鑒 明 發 的 峭 陡 成 形 程 製 Ti T S 的 統 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐）The isolation is formed in the form of a shallow trench, which is usually etched into a semiconductor substrate and then filled with an insulating material, such as county-signal-emulsion silicon. Those skilled in this art usually call these filled trenches with shallow trench isolation structures. The STI structure is usually formed by first depositing a silicon nitride layer on a semiconductor substrate, and then patterning the silicon nitride layer to form a hard mask. The substrate is then etched to form a steep trench between adjacent 70 pieces. Finally, the trench is filled with an oxide to form an element isolation structure. When forming steep trenches, it is common to use an anisotropic plasma dry bench to remove unwanted parts. However, plasma destruction often occurs, resulting in a large number of etching defects. Also, steep trenches with sharp corners can cause corner parasitic leakage, which reduces the isolation characteristics. Although the STI process has better isolation characteristics than the LOCOS process, the STI process must be limited by the large number of defects caused by plasma dry etching and the sharp corner effect. Therefore, there is a need to develop new processes that can effectively solve the above problems. ------------- Equipment ----------- Order (Please read the notes on the back and fill in this page) Memorandum: The summary of the description and the above-mentioned unified paper size of Ti TS made by the steep and steep forming process of the eye-catching Mingfa apply to the Chinese National Standard (CNS) A4 specification (210 X 297 meals)
、發明說明（ 經濟部智慧財產局員工消費合作社印制衣 4渠’容易造成尖銳的溝渠角落效應。因此，本發明提供 —種STI結構的製造方法，可以圓潤STI的底部角落與頂 部邊緣角落，減少STI對基底的應力，並且減少因為角落 效應而造成的漏電流。 從一觀點，本發明提供一種淺溝渠隔離結構的製造方 β ’至少包括下列步驟。首先提供一基底，在基底中形成 有—溝渠’此溝渠具有銳利的底部角落。在溝渠的底部與 側壁成長出第一氧化矽層，並且圓潤溝渠之底部角落，然 後去除第一氧化矽層。接著沿著溝渠内壁成長出第二氧化 石夕層’之後在溝渠内填入填充層，比如是氧化石夕層等。 從另一觀點，本發明提供一種淺溝渠隔離結構的製造 方法’至少包括下列步驟。首先在一基底上依序形成墊氧 化層與氮化矽層。接著在氮化矽層與墊氧化層中形成一開 口 ’暴露出基底，然後以氮化矽層與墊氧化矽層為罩幕， 非等向性蝕刻基底，在開口底部之基底中形成一溝渠。在 溝渠之底部與側壁成長第一氧化矽層，然後去除第一氧化 石夕層，並且去除在開口邊緣之部分墊氧化層，使溝渠的頂 部邊緣角落變得圓潤。沿著暴露的基底表面成長出第二氧 化石夕層’之後在溝渠内填入填充層’然後去除氛化石夕層與 塾氧化層。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公t ) I -------^ --------^ · I-------線 (請C閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 511186、 Explanation of the invention (The 4 channels of printed clothing of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs can easily cause sharp channel corner effects. Therefore, the present invention provides a manufacturing method of the STI structure, which can round the bottom corners and top edge corners of the STI. Reducing the stress of the STI on the substrate and reducing the leakage current caused by the corner effect. From a viewpoint, the present invention provides a method for manufacturing a shallow trench isolation structure β ′ including at least the following steps. First, a substrate is provided, and the substrate is formed with —Ditch 'This trench has a sharp bottom corner. A first silicon oxide layer grows on the bottom and side walls of the trench, and the bottom corner of the trench is rounded, and then the first silicon oxide layer is removed. Then a second oxide grows along the inner wall of the trench. The Shi Xi layer is then filled with a filling layer in the trench, such as an oxidized Shi Xi layer. From another point of view, the present invention provides a method for manufacturing a shallow trench isolation structure. The method includes at least the following steps. Firstly, sequentially on a substrate Forming a pad oxide layer and a silicon nitride layer, and then forming an opening in the silicon nitride layer and the pad oxide layer 'The substrate is exposed, and then a silicon nitride layer and a pad silicon oxide layer are used as a mask. The substrate is anisotropically etched to form a trench in the substrate at the bottom of the opening. A first silicon oxide layer is grown on the bottom and sidewall of the trench. Then remove the first oxide layer, and remove a part of the pad oxide layer on the edge of the opening, so that the top edge corners of the trench become rounded. A second oxide layer is grown along the exposed substrate surface and filled in the trench. Into the filling layer 'and then remove the atmospheric fossilized layer and tritium oxide layer. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 g t) I ------- ^ ------- -^ · I ------- line (Please read the notes on the back and fill in this page) Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 511186
AT B7_ 五、發明說明（） 圖式簡單說明： 本發明的較佳實施例將於往後之說明文字中輔以下列 圖形做更詳細的闡述，其中： 第1 A-1 E圖是繪示本發明之一較佳實施例之製程剖面 示意圖。 第2圖是繪示關於第1B圖中圓圈200之區域放大圖。 圖號對照說明： 100 半 導 體 基底 110 硬 罩 幕 層 112 墊 氧 化 層 1 14 氮 化 矽 層 1 16 開 a 118、 11 ί ?a 溝 120 氧 化 矽 層 122 底 部 角 落 124 凹 陷 126 頂 部 角 落 130 氧 化 矽 層 132 填 充 層 200 圓圈 發明詳細說明： 本發明提供一種淺溝渠隔離的製造方法，利用熱氧化 技術成長氧化矽層，圓潤非等向性蝕刻形成的銳利角落， 減少淺溝渠隔離施加於基底的應力。另一方面，藉由去除 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公t ) — — — 1 — — — — — — — —* .1 — 丨 - ----訂--------- (請•先閱讀背面之注意事項再填寫本頁) 511186 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 部分墊氧化層’圓潤溝渠的頂部邊緣角落，避免角落效應， 減少漏電流。 第1 A-1 E圖是繪示本發明之一較佳實施利之製程剖面 示意圖。請參照第1 A圖，首先提供一半導體基底1 00，比 如是具有<1〇〇>結晶結構之p型摻雜矽基底。在基底100中 形成有至少一個輪廓陡峭的溝渠1 1 8，此溝渠i 1 8具有尖 銳的底部角落1 1 5。 溝渠1 1 8的製作方法，首先在基底1 〇〇上依序形成一 層墊氧化層112與一層氮化矽層114,作為硬罩幕層110。 墊氧化層Π 2可以是使用熱氧化技術所形成的熱氧化矽 層，或是化學氣相沉積（C V D)技術所形成氧化矽層，至於氮 化矽層1 1 4可以是CVD技術所形成的氮化矽層。接著在氮 化矽層1 1 4上塗佈一層光阻層，係由感光性材料所組成。 然後進行傳統的微影製程，對光阻層形成曝光、顯影等步 驟’在光阻層中形成所需的圖案。接著以圖案化光阻層為 罩幕，進行非等向性乾蝕刻製程，例如是反應性離子蝕刻 (RIE) ’對氮化矽層11 4與墊氧化層1 1 2進行姓刻，在氮化 矽層1 1 4與墊氧化層1 1 2中形成開口丨丨6，暴露出部分基 底1 〇 〇。然後利用乳電漿或是剝除劑，去除光阻層。接著 以圖案化的硬罩幕層1 1 0作為罩幕’包括氮化石夕層1 1 4與 蟄氧化層1 1 2 ’進行非等向性乾触刻製程，對開口 116底 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公f ) ------ -------裝—---訂---------線 (tl先閱讀背面之注意事項再填寫本頁) 511186 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 下的基底1 00進行触刻’並且控制製程參數，在基底1 00 中形成陡峭的溝渠118 ’其内部側壁的傾斜角度將近接近 9 0度，而且在溝渠1 1 8的頂部邊緣與底部角落1 1 5均形成 銳利的角落，接近90度。 請參照第1 B圖’利用熱氧化技術’在溝渠1 1 8的側壁 Π 7與底部1 1 9成長出一層氧化矽層1 20，其厚度控制約為 5 0 - 1 5 0埃。在成長出氧化石夕層1 2 0的同時，亦使溝渠底部 銳利的角落1 1 5變得圓潤’形成圓潤的底部角落1 2 2。請 參照第2圖，其繪示第1Β圖中，關於圓圈200的區域放大 圖。由於使用熱氧化技術成長氧化矽層1 20時，必須消耗 部分基底1 0 0，因此在溝渠1 1 8之側壁1 1 7與底部丨丨9所 成長的氧化矽厚度會較厚，而在尖銳角落1 1 5的部分則不 利於氧化矽成長，因此隨著氧化矽層1 20的成長，而形成 圓潤的底部角落1 2 2。此外’在形成氧化矽層1 2 〇的同時， 亦可使先前因為#刻溝渠1 1 8所造成的I虫刻缺陷消失。 s月參3?、第1 c圖，接耆利用濕式触刻’比如使用稀釋的 氫氟酸（DHF)或是缓衝蝕刻劑（ΒΟΕ)，去除氧化矽層12〇, 同時去除在開口 1 1 6邊緣的部分墊氧化層1 1 2，而形成溝 渠1 1 8a。在去除部分墊氧化層丨丨2的同時，同時會消耗在 溝渠11 8a頂部邊緣的部分基底丨〇〇，使原本銳利的頂部角 落，變得圓潤，而成圓潤的頂部邊緣角落126 麵刻劑去 本紙張尺度適用中國國家標準(21巧297 n ) - -------· I I I I I--^ . -----I--I (後先閱讀背面之注意事項再填寫本頁)AT B7_ 5. Explanation of the invention () Brief description of the drawings: The preferred embodiment of the present invention will be described in more detail in the following explanatory text with the following figures, of which: Figure 1 A-1 E is a drawing A schematic cross-sectional view of a manufacturing process according to a preferred embodiment of the present invention. FIG. 2 is an enlarged view showing a region of circle 200 in FIG. 1B. Comparative description of drawing numbers: 100 semiconductor substrate 110 hard cover curtain layer 112 pad oxide layer 1 14 silicon nitride layer 1 16 open a 118, 11 ί? A trench 120 silicon oxide layer 122 bottom corner 124 recess 126 top corner 130 silicon oxide layer 132 Filling layer 200 Circle invention detailed description: The present invention provides a method for manufacturing shallow trench isolation, which uses thermal oxidation technology to grow a silicon oxide layer, rounds sharp corners formed by anisotropic etching, and reduces the stress applied to the substrate by shallow trench isolation. On the other hand, by removing the paper size, the Chinese National Standard (CNS) A4 specification (210 X 297 mm t) is applied. — — — 1 — — — — — — — — — — — — Order — -------- (Please read the precautions on the back before filling this page) 511186 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention Edge corners to avoid corner effects and reduce leakage current. Figures 1A-1E are schematic cross-sectional views showing a preferred process of the present invention. Referring to FIG. 1A, a semiconductor substrate 100 is first provided, such as a p-type doped silicon substrate having a < 100 > crystal structure. At least one trench 1 1 8 having a steep profile is formed in the substrate 100, and the trench i 1 8 has a sharp bottom corner 1 1 5. In the method for manufacturing the trench 1 18, a pad oxide layer 112 and a silicon nitride layer 114 are sequentially formed on the substrate 100 as a hard cover curtain layer 110. The pad oxide layer 2 may be a thermal silicon oxide layer formed using a thermal oxidation technology, or a silicon oxide layer formed using a chemical vapor deposition (CVD) technology. As for the silicon nitride layer 1 1 4 may be formed by a CVD technology Silicon nitride layer. Next, a photoresist layer is coated on the silicon nitride layer 1 1 4 and is composed of a photosensitive material. Then, a conventional lithography process is performed to form steps of exposing and developing the photoresist layer 'to form a desired pattern in the photoresist layer. Next, the patterned photoresist layer is used as a mask to perform an anisotropic dry etching process, such as reactive ion etching (RIE). The silicon nitride layer 11 4 and the pad oxide layer 1 12 are etched. An opening is formed in the siliconized layer 1 1 4 and the pad oxide layer 1 12 to expose a part of the substrate 100. Then use a milk plasma or a stripping agent to remove the photoresist layer. Then use the patterned hard mask layer 1 1 10 as the mask 'including the nitride stone layer 1 1 4 and the hafnium oxide layer 1 1 2' for an anisotropic dry-contact engraving process, and the paper size of the opening 116 is applicable to China National Standard (CNS) A4 Specification (210 X 297 male f) ------ ------- installation ----- order ---------- line (tl first read the note on the back Please fill in this page for further information) 511186 Printed by A7 B7, Consumer Cooperatives of Intellectual Property Bureau of the Ministry of Economic Affairs V. The substrate 100 under the description of the invention is etched and the process parameters are controlled to form a steep trench 118 in the substrate 100. The inclination angle of the inner side wall is close to 90 degrees, and a sharp corner is formed at the top edge of the trench 1 1 8 and the bottom corner 1 15, which is close to 90 degrees. Please refer to FIG. 1B, “Using the thermal oxidation technology”, a silicon oxide layer 120 is grown on the side wall Π 7 and the bottom 1 19 of the trench 1 1 8, and the thickness control is about 50 to 150 angstroms. At the same time as the oxidized stone layer 1 2 0 is grown, the sharp corners 1 1 5 at the bottom of the trench are also rounded 'to form rounded bottom corners 1 2 2. Please refer to FIG. 2, which shows an enlarged view of the area of circle 200 in FIG. 1B. Since the silicon oxide layer 1 20 is grown using thermal oxidation technology, a part of the substrate 100 must be consumed. Therefore, the thickness of the silicon oxide grown on the sidewall 1 1 7 and the bottom of the trench 1 1 8 will be thicker, and sharper. Corner 1 1 5 is not conducive to the growth of silicon oxide, so as the silicon oxide layer 120 grows, a rounded bottom corner 1 2 2 is formed. In addition, while the silicon oxide layer 12 is formed, the I-etching defects previously caused by # 刻 沟沟 1 18 can also disappear. Figure 3c, Figure 1c, followed by wet-etching, such as using dilute hydrofluoric acid (DHF) or buffer etchant (BOE) to remove the silicon oxide layer 12, while removing the opening A portion of the edge of 1 1 6 is padd with an oxide layer 1 1 2 to form a trench 1 1 8a. While removing part of the pad oxide layer 丨 丨 2, part of the substrate at the top edge of the trench 11 8a will be consumed at the same time, so that the originally sharp top corners will be rounded to form rounded top edge corners. 126 surface etchants The paper standard is applicable to the Chinese national standard (21297297 n)-------- · IIII I-^. ----- I--I )
511186 五、發明說明（） 除部分墊氧化層1 1 2之後，在溝渠1 1 8 a的頂部邊緣形成凹 陷124 ’其深度d會影響後續形成之氧化矽層的面積，隨 製程的線寬作適當的控制。 請參照第1D圖，接著使用熱氧化技術，在溝渠1 1 8a 内壁所暴露之基底100表面成長出氧化矽層130，其厚度 約為100-300埃左右。由於溝渠n8a的底部角落122與頂 部邊緣角落1 26均已圓潤，因此所長出的氧化矽層1 3 0具 有較均勻的厚度，可作為後續填入溝渠1 1 8a之填充層的緩 衝層，減少填充層與基底1 00的熱膨脹係數差異所造成的 應力。 請參照第1 E圖，在溝渠1 1 8 a中填入填充層1 3 2，形成 淺溝渠隔離結構，其例如以下列步，驟形成’在不脫離本發 明精神之條件下，可做適當的變更。首先在基底1 0 0上形 成一層填充材料層，並且填滿整個溝渠1 1 8a，由於本發明 之氧化矽層1 3 0甚薄，因此在填入填充材料層時，不容易 形成孔洞（void)，避免氣體滲入填充層132中，影響淺溝渠 隔離結構的隔離特性。此填充材料層比如是利用常壓化學 氣相沉積法（APCVD)或低壓化學氣相沉積法（LPCVD)，以四 乙基矽烷（TEOS)為前趨物所形成的氧化矽層，以電漿加強 化學氣相沉積法（P E C V D)所形成的氧化矽層，或是高密度 電漿化學氣相沉積（HDP-CVD)所形成的HDP氧化矽層。並 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公f ) ------------- 裝--------訂-------丨線 (免先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印一衣 511186 A7 B7 五、發明說明（） 且選擇性地進行密實（densification)步驟，使氧化石夕層具有 較密實的結構。接著以回蝕刻（Etchback)技術或是化學機械 研磨（CMP)技術去除硬罩幕層1 1 〇上的填充材料層，僅留下 在溝渠1 1 8 a内的部分1 3 2 ’形成淺溝渠隔離結構°表後以 濕式蝕刻去除氮化矽層i 1 4與墊氧化層1 1 2。 綜上所述，利用本發明之淺溝渠隔離結構的製造方 法，可以形成具有圓潤角落之淺溝渠隔離結構’減少淺溝 渠隔離對基底施加應力所造成的破壞’並且形成圓潤的頂 部邊緣角落，減少因為角落效應所造成的漏電流。 如熟悉此技術之人員所暸解的，以上所述僅為本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍内。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 i紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公t )511186 V. Description of the invention () After removing part of the oxide layer 1 1 2, a depression 124 ′ is formed on the top edge of the trench 1 1 8 a. Its depth d will affect the area of the silicon oxide layer to be formed subsequently. It depends on the line width of the process. Appropriate controls. Referring to FIG. 1D, a thermal oxidation technique is used to grow a silicon oxide layer 130 on the surface of the substrate 100 exposed on the inner wall of the trench 1 1 8a, with a thickness of about 100-300 angstroms. Since the bottom corner 122 and the top edge corner 126 of the trench n8a have been rounded, the grown silicon oxide layer 130 has a relatively uniform thickness, which can be used as a buffer layer for the filling layer that is subsequently filled into the trench 1 8a, reducing Stress caused by the difference in thermal expansion coefficient between the filling layer and the substrate. Referring to FIG. 1E, a filling layer 1 3 2 is filled in the trench 1 1 8 a to form a shallow trench isolation structure. For example, the following steps can be used to form the step 'without departing from the spirit of the present invention. Changes. First, a layer of filling material is formed on the substrate 100, and the entire trench 1 18a is filled. Since the silicon oxide layer 130 of the present invention is very thin, it is not easy to form voids when filling the filling material layer (void ) To prevent gas from penetrating into the filling layer 132 and affect the isolation characteristics of the shallow trench isolation structure. This filling material layer is, for example, a silicon oxide layer formed by using atmospheric pressure chemical vapor deposition (APCVD) or low pressure chemical vapor deposition (LPCVD) with tetraethylsilane (TEOS) as a precursor, and a plasma Strengthen the silicon oxide layer formed by chemical vapor deposition (PECVD) or the HDP silicon oxide layer formed by high-density plasma chemical vapor deposition (HDP-CVD). And this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 male f) ------------- installed -------- ordered ------ -丨 line (no need to read the notes on the back first and then fill out this page) Printed on the clothing consumer cooperative of the Ministry of Economic Affairs Intellectual Property Bureau 511186 A7 B7 V. Description of the invention () and selectively perform densification steps to make the oxide stone The evening layer has a denser structure. Then, an etch back (Etchback) technology or a chemical mechanical polishing (CMP) technology is used to remove the filling material layer on the hard cover curtain layer 1 10, leaving only a portion 1 3 2 'within the trench 1 1 8 a to form a shallow trench. After the isolation structure, the silicon nitride layer i 1 4 and the pad oxide layer 1 1 2 are removed by wet etching. In summary, by using the manufacturing method of the shallow trench isolation structure of the present invention, a shallow trench isolation structure with rounded corners can be formed to 'reduce the damage caused by the stress caused by the shallow trench isolation on the substrate' and form a rounded top edge corner to reduce Leakage current due to corner effects. As will be understood by those familiar with this technology, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention, etc. Effective changes or modifications should be included in the scope of patent application described below. (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs i Paper size is applicable to China National Standard (CNS) A4 (210 X 297 metric t)