510012 經濟部智慧財產局員工消費合作社印製 五、發明說明（/ ) 本發明是有關於一種晶圓運送過程，且特別是有關 於一種可以簡化後續凸塊製程之晶圓運送過程。 在現今資訊爆炸的社會，電子產品遍佈於日常生活 中，無論在食衣住行育樂方面，都會用到積體電路元件所 組成的產品。隨著電子科技不斷地演進，功能性更複雜、 更人性化的產品推陳出新，就電子產品外觀而言，也朝向 輕、薄'短、小的趨勢設計。因此就半導體製程上，其金 屬連接線的尺寸亦不斷地縮減，從0.25微米縮減到0.18 微米，再下一步更將朝向0.15微米甚至於0.13微米的世 代前進。就銅製程而言，隨著材料與製程技術的進步，各 種阻障層不斷被硏究，Damascene製程以及銅化學機械硏 磨技術的成功，使得這些問題得以解決。其中，以銅製程 所製作出的晶片，一般而言，其焊墊係爲銅。 然而，由於銅極易與空氣中的氧產生氧化反應，因 此在晶圓出廠進行凸塊製程之前，必須要覆蓋一金屬保護 層到以銅爲材質的焊墊上，以防止以銅爲材質的焊墊有氧 化的情形發生。其晶圓運送過程如下所述。 請參照第1圖到第6圖，其繪示習知以銅製程製作 之晶圓運送過程。首先，請參照第1圖，在晶圓廠中，晶 圓Π〇製作完成之後，晶圓110會具有多個焊墊114(僅繪 示其中的一個）及一保護層116，均位在晶圓110之主動表 面112上，並且保護層116具有多個開口 118,以暴露出 焊墊114，其中焊墊114的材質係爲銅。 請參照第2圖，爲了在出晶圓廠前，防止焊墊114 3 本紙張尺度適則7 g @家標準（CNS)A‘l規格⑵G X 297公髮) - --- (請先閱讀背面之注意事項再填寫本頁) ;1裝 訂· -·線- 510012 8460twf.doc/009 A7 B7 經濟部中央標準局員工消費合作社印装 五、發明説明（2/ ) 與空氣接觸，而產生氧化的情形，因此會濺鍍一金屬保護 層120到晶圓110之主動表面112上，其中金屬保護層12〇 的材質係爲鋁。接著進行微影蝕刻的步驟，以定義金屬保 護層120，而殘留之金屬保護層120與焊墊114的位置相 對應，如此藉由金屬保護層120可以防止焊墊114暴露到 空氣中，而形成如第3圖所示的結構。 此時，晶圓110便可以與空氣接觸，而將晶圓11〇 運送到凸塊廠中，進行接下來的凸塊製程。請參照第4圖’ 將晶圓11〇運送到凸塊廠中之後，首先會以濺鍍的方式形 成一黏著層130到晶圓110之主動表面112上及金屬保護 層120上，其中黏著層13〇的材質比如是鉻、鈦或鈦鎢合 金。 請參照第5圖，接下來再以濺鍍的方式，形成一融 合層140到黏著層130上，其中融合層140的材質比如是 銅。然後可以利用習知的電鍍方式或網板印刷的方式，形 成焊塊150到融合層140上，最後再透過迴焊的步驟，而 形成如第6圖所示的結構。 在上述之晶圓運送過程中，其在晶圓運送前之形成 金屬保護層的製程並未與後續之凸塊製程整合，如此在製 程上並不具效率性，導致製造成本增加。 因此本發明的目的就是在提供一種晶圓運送過程， 其在晶圓運送前之形成金屬保護層的製程可以與後續之凸 塊製程整合，如此在製程上甚具效率性，而降低製造成本。 在敘述本發明之前，先對空間介詞的用法做界定， 4 (請先閲讀背面之注意事項存填寫本貫) 装- 訂 ii線· 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐〉 83. 3. 10,000 510012 8460twf.doc/009 A7 B7 石- 經濟部中央標率局貝工消費合作社印^ 發明説明（3) 所謂空間介詞“上”係指兩物之空間關係係爲可接觸或不 可接觸均可。舉例而言，A物在B物上，其所表達的意思 係爲A物可以直接配置在B物上，A物有與B物接觸； 或者A物係配置在B物上的空間中，a物沒有與B物接 觸。 爲達成本發明之上述和其他目的，提出一種晶圓運 送過程，用以運送一晶圓，晶圓具有一主動表面及至少一 焊墊，焊墊係配置在晶圓之主動表面上，而焊墊的材質係 爲銅，在運送完晶圓後，會進行一凸塊製程，以形成至少 一凸塊到晶圓之主動表面上，凸塊至少包括一焊塊、一融 合層及一黏著層，而黏著層位在晶圓之主動表面上，融合 層位在黏著層上，焊塊位在融合層上，其中黏著層的材質 可以是鎳、鉻、鈦、鈦鎢合金或氮化鈦等。而晶圓運送過 程首先係在一晶圓廠中，至少形成黏著層到晶圓之主動表 面上，然後再將晶圓運送到一凸塊廠中。 綜上所述，本發明之晶圓運送過程，由於其用以防 止焊墊暴露於外的金屬層係爲用以製作凸塊的黏著層，如 此在晶圓運送前之形成黏著層的製程可以與後續之凸塊製 程整合，故在製程上甚具效率性，因而可以降低製造成本。 爲讓本發明之上述和其他目的、特徵、和優點能更 明顯易懂，下文特舉一較佳實施例，並配合所附圖式，作 詳細說明如下： 圖式之簡單說明： 第1圖到第6圖繪示習知以銅製程製作之晶圓運送 5 (請先閲讀背面之注意事項再填寫本頁) 訂-510012 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (/) The present invention relates to a wafer transportation process, and more particularly to a wafer transportation process that can simplify the subsequent bump process. In today's information-exploding society, electronic products are everywhere in daily life. No matter in food, clothing, living, and entertainment, products made of integrated circuit components are used. As electronic technology continues to evolve, more functional and human-friendly products are being introduced. As far as the appearance of electronic products is concerned, they are also designed to be light, thin, short, and small. Therefore, in the semiconductor manufacturing process, the size of its metal connecting wires has been continuously reduced, from 0.25 microns to 0.18 microns, and the next step will be towards the 0.15 microns or even 0.13 microns generation. As far as the copper process is concerned, with the advancement of materials and process technology, various barrier layers have been continuously researched. The success of the Damascene process and copper chemical mechanical honing technology has solved these problems. Among them, the wafers produced by the copper process generally have copper pads. However, because copper is susceptible to oxidation reactions with oxygen in the air, it is necessary to cover a metal protective layer on a copper-based solder pad before the bump process of the wafer leaving the factory to prevent copper-based soldering. Oxidation of the pad occurs. The wafer transport process is as follows. Please refer to Fig. 1 to Fig. 6, which show a conventional wafer transportation process using a copper process. First, please refer to FIG. 1. In the wafer fab, after the wafer fabrication is completed, the wafer 110 will have a plurality of pads 114 (only one of which is shown) and a protective layer 116, which are all located on the wafer. The active surface 112 of the circle 110 and the protective layer 116 have a plurality of openings 118 to expose the solder pads 114. The material of the solder pads 114 is copper. Please refer to Figure 2. In order to prevent solder pads 114 3 before leaving the fab, the paper size is 7 g @ 家 standard (CNS) A'l size ⑵G X 297 public)---- (Please read first Note on the back, please fill in this page again); 1 Binding ·-· Thread-510012 8460twf.doc / 009 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (2 /) Contact with the air and oxidation Therefore, a metal protective layer 120 is sputtered onto the active surface 112 of the wafer 110, and the material of the metal protective layer 120 is aluminum. Next, a lithographic etching step is performed to define the metal protective layer 120, and the remaining metal protective layer 120 corresponds to the position of the solder pad 114. Thus, the metal protective layer 120 can prevent the solder pad 114 from being exposed to the air and formed. The structure is shown in FIG. 3. At this time, the wafer 110 can be in contact with the air, and the wafer 110 is transported to the bump factory for the next bump process. Please refer to FIG. 4 ′ After the wafer 110 is transported to the bump factory, an adhesive layer 130 is first formed on the active surface 112 of the wafer 110 and the metal protective layer 120 by sputtering. The adhesive layer is formed thereon. The material of 130 is, for example, chromium, titanium, or a titanium tungsten alloy. Referring to FIG. 5, a fusion layer 140 is formed on the adhesive layer 130 by sputtering. The material of the fusion layer 140 is, for example, copper. Then, a conventional plating method or screen printing method can be used to form the solder bump 150 onto the fusion layer 140, and finally, the structure shown in FIG. 6 can be formed through the reflow step. In the above-mentioned wafer transportation process, the process of forming a metal protective layer before wafer transportation is not integrated with the subsequent bump process, so it is not efficient in the process, resulting in an increase in manufacturing costs. Therefore, an object of the present invention is to provide a wafer transportation process, in which a process for forming a metal protective layer before wafer transportation can be integrated with a subsequent bump process, so that the process is more efficient and reduces manufacturing costs. Before describing the present invention, first define the use of space prepositions, 4 (Please read the notes on the back and fill in this book) Binding-Binding II · This paper size applies the Chinese National Standard (CNS) A4 specification (210X297) 83> 3. 10,000 510012 8460twf.doc / 009 A7 B7-Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^ Description of the invention (3) The so-called spatial preposition "上" means that the spatial relationship between the two things is acceptable. It can be in contact or inaccessible. For example, object A is on object B, which means that object A can be directly disposed on object B, and object A is in contact with object B; or object A is disposed on object B In the space on the object, the object a is not in contact with the object B. In order to achieve the above and other objectives of the invention, a wafer transport process is proposed for transporting a wafer, the wafer has an active surface and at least one pad, The pads are arranged on the active surface of the wafer, and the material of the pads is copper. After the wafer is shipped, a bump process is performed to form at least one bump on the active surface of the wafer. The block includes at least a solder block, a fusion layer and an adhesive layer. The adhesion layer is on the active surface of the wafer, the fusion layer is on the adhesion layer, and the solder bump is on the fusion layer. The material of the adhesion layer can be nickel, chromium, titanium, titanium tungsten alloy or nitride. Titanium, etc. The wafer transport process is first carried out in a fab, at least an adhesive layer is formed on the active surface of the wafer, and then the wafer is transported to a bump factory. In summary, the present invention During the wafer transportation process, since the metal layer used to prevent the pads from being exposed is an adhesive layer for making bumps, the process of forming an adhesive layer before wafer transportation can be integrated with subsequent bump processes. Therefore, it is very efficient in the manufacturing process, which can reduce the manufacturing cost. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings The detailed description is as follows: Brief description of the drawings: Figures 1 to 6 show the conventional wafer manufacturing process 5 made of copper (please read the precautions on the back before filling this page) Order-
本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 83. 3. 10,000 510012 經濟部中央標準局員工消費合作社印裝 8460twf.doc/009 A7 B7五、發明説明（4) 過程。 第7圖至第10圖繪示依照本發明一較佳實施例以 銅製程製作之晶圓運送過程。 圖式之標示說明： 11 〇 :晶圓 112 :主動表面 114 :焊墊 116 :保護層 118 ··開口 120:金屬保護層 130 :黏著層 140 ··融合層 150 :焊塊 210 :晶圓 ’ 212 :主動表面 214 :焊墊 216 :保護層 218 :開口 220 :黏著層 230 :融合層 240 :焊塊 250 :凸塊 實施例 第7圖至第10圖繪示依照本發明一較佳實施例以 (請先閲讀背面之注意事項再填寫本頁)This paper size applies to China National Standard (CNS) A4 (210X297 mm) 83. 3. 10,000 510012 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 8460twf.doc / 009 A7 B7 V. Description of Invention (4) Process. Figures 7 to 10 illustrate a wafer transport process using a copper process in accordance with a preferred embodiment of the present invention. The description of the labeling of the drawings: 11 〇: wafer 112: active surface 114: pad 116: protective layer 118 · opening 120: metal protective layer 130: adhesive layer 140 · fusion layer 150: solder block 210: wafer ' 212: Active surface 214: Welding pad 216: Protective layer 218: Opening 220: Adhesive layer 230: Fusion layer 240: Welding block 250: Bump embodiment Figures 7 to 10 show a preferred embodiment according to the present invention (Please read the notes on the back before filling this page)
JL 裝· 訂' 線- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 83. 3. 10,000 510012 8460twf.doc/〇〇9 A7 B7 經濟部中央標準局貝工消費合作社印^ 五、發明説明（ί ) 銅製程製作之晶圓運送過程。首先’請參照第7圖’在晶 圓廠中，晶圓210製作完成之後’晶圓210會具有多個焊 墊214(僅繪示其中的一個）及一保護層216,均位在晶圓210 之主動表面212上，並且保護層216具有多個開口 218 ’ 以暴露出焊墊214，其中焊墊214的材質係爲銅。 請參照第8圖，爲了在出晶圓廠前，防止焊墊214 與空氣接觸，而產生氧化的情形，因此會濺鍍一黏著層220 到晶圓210之主動表面212上，其中黏著層220的材質可 以是鎳、鉻、鈦、鈦鎢合金或氮化鈦等。如此藉由黏著層 220可以防止焊墊214暴露到空氣中。 ， 此時，晶圓210便可以與空氣接觸，而將晶圓210 運送到凸塊廠中，進行接下來的凸塊製程。請參照第9圖’ 將晶圓210運送到凸塊廠中之後，會以濺鍍的方式形成一 融合層230到黏著層220上，其中融合層230的材質比如 是銅。然後可以利用習知的電鍍方式或網板印刷的方式， 形成焊塊240到融合層230上，最後再透過迴焊的步驟， 而形成如第10圖所示的結構，如此凸塊250便製作完成， 其中凸塊250係由焊塊240、融合層230及黏著層220所 構成。 如第7圖到第10圖所示，在上述之晶圓運送過程 中’因爲其用以防止焊墊214暴露於外的金屬層係爲用以 製作凸塊2S0的黏著層220，如此在晶圓運送前之形成黏 者層220的製程可以與後續之凸塊製程整合，故在製程上 甚具效率性，因而可以降低製造成本。 7 本紙張尺度國家( CNS )八顿^ ( 21〇><297公廣) (請先閲讀背面之注意事項再填寫本頁) 裝_ 訂 線- 510012 經濟部中央標準局貝工消費合作社印裝 8460twf.doc/009 A 7 B7五、發明説明（l〇 ) 另外，本發明的應用並非僅限於上述的方式，亦可 以在形成黏著層到晶圓上之後，在晶圓廠中，再形成融合 層到黏著層上，接著才將晶圓運送到凸塊廠中，進行形成 焊塊製程。然而必須注意的是，在晶圓從晶圓廠送到凸塊 廠的過程中，其融合層的材質必須是不易與空氣產生氧化 反應的。 在上述的實施例中，其凸塊中的球底金屬層（Under Bump Metal，UBM)係由黏著層及融合層的兩層結構所組. 成，然而亦可以是三層結構或是四層結構的球底金屬層， 而其晶圓運送過程，與前述的實施例雷同，亦即至少將球 底金屬層中位在最底層的金屬，在運出晶圓廠前，就形成 在晶圓之主動表面上，以保護晶圓之焊墊與外界空氣接 觸。然而，亦可以將三層結構或是四層結構的球底金屬層 形成到晶圓之主動表面之後，再運出晶圓廠。 另外，本發明的應用並非侷限於上述的方式，亦可 以在晶圓廠中便形成多層的金屬層到晶圓的主動表面上， 然後再送到凸塊廠進行剩下的凸塊製程，其中在晶圓廠中 所形成的金屬層可以是球底金屬層的全部結構或部份結 構，然而必須注意的是，在晶圓從晶圓廠送到凸塊廠的過 程中，其位在表層的金屬層之材質必須是不易與空氣產生 氧化反應的，故其表層的金屬層至少不能是銅。 綜上所述，本發明之晶圓運送過程，由於其用以防 止焊墊暴露於外的金屬層係爲用以製作凸塊的黏著層，如 此在晶圓運送前之形成黏著層的製程可以與後續之凸塊製 8 (請先閲讀背面之注意事項再填寫本頁) 裝· 訂 線_ 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 83.3. 10,000 510012 8460twf〇doc/009 A7 B7 五、發明説明（q) 程整合，故在製程上甚具效率性，因而可以降低製造成本。 雖然本發明已以一較佳實施例揭露如上，然其並非 用以限定本發明，任何熟習此技藝者，在不脫離本發明之 精神和範圍內’當可作些許之更動與潤飾，因此本發明之 保護範圍當視後附之申請專利範圍所界定者爲準。 --------裝·----^---訂-----»線 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印^ 83. 3. 10,000 本紙張尺度適用中國國家榡準（CNS ) A4規格（210X297公釐〉JL Binding and Binding Line-This paper size is applicable to Chinese National Standard (CNS) A4 (210X297 mm) 83. 3. 10,000 510012 8460twf.doc / 〇09 A7 B7 Printed by the Bayer Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^ V. Description of the Invention (ί) Wafer transport process made by copper process. First, 'please refer to Figure 7'. In the wafer fab, after the wafer 210 is manufactured, the wafer 210 will have multiple pads 214 (only one of which is shown) and a protective layer 216, which are all located on the wafer. The active surface 212 of 210 and the protective layer 216 have a plurality of openings 218 ′ to expose the bonding pads 214. The material of the bonding pads 214 is copper. Please refer to FIG. 8. In order to prevent the bonding pad 214 from contacting with the air before the wafer is discharged, an adhesive layer 220 is sputtered onto the active surface 212 of the wafer 210, and the adhesive layer 220 is deposited thereon. The material can be nickel, chromium, titanium, titanium tungsten alloy or titanium nitride. In this way, the adhesive layer 220 can prevent the pad 214 from being exposed to the air. At this time, the wafer 210 can be in contact with the air, and the wafer 210 is transported to a bump factory for the next bump process. Please refer to FIG. 9 'After the wafer 210 is transported to the bump factory, a fusion layer 230 is formed on the adhesive layer 220 by sputtering. The material of the fusion layer 230 is, for example, copper. Then, the conventional plating method or screen printing method can be used to form a solder bump 240 onto the fusion layer 230. Finally, the structure shown in FIG. 10 is formed through the reflow step, so that the bump 250 is fabricated. Finished, wherein the bump 250 is composed of a solder bump 240, a fusion layer 230, and an adhesive layer 220. As shown in FIG. 7 to FIG. 10, during the above-mentioned wafer transportation process, 'the metal layer used to prevent the pad 214 from being exposed to the outside is the adhesive layer 220 used to make the bump 2S0. The process of forming the adhesive layer 220 before the round transportation can be integrated with the subsequent bump process, so it is very efficient in the process, and can reduce the manufacturing cost. 7 National Paper Standards (CNS) Eight Days ^ (21〇 > < 297 public broadcasting) (Please read the precautions on the back before filling out this page) Binding _ 510012 Shellfish Consumer Cooperative, Central Standards Bureau, Ministry of Economic Affairs Printing 8460twf.doc / 009 A 7 B7 V. Description of the invention (10) In addition, the application of the present invention is not limited to the above-mentioned method, and it can also be performed after the adhesive layer is formed on the wafer, A fusion layer is formed on the adhesive layer, and then the wafer is transported to a bump factory for a solder bump forming process. However, it must be noted that during the process of transferring wafers from the fab to the bump factory, the material of the fusion layer must not easily react with air. In the above embodiment, the under-bump metal layer (UBM) in the bump is composed of a two-layer structure of an adhesive layer and a fusion layer. However, it may be a three-layer structure or a four-layer structure. Structure of the ball-bottom metal layer, and the wafer transport process is the same as the previous embodiment, that is, at least the metal at the bottom of the ball-bottom metal layer is formed on the wafer before being shipped out of the fab. On the active surface to protect the pads of the wafer from contact with the outside air. However, it is also possible to form a three-layer structure or a four-layer structure with a ball-bottom metal layer on the active surface of the wafer and then ship it out of the fab. In addition, the application of the present invention is not limited to the above-mentioned method, and a multilayer metal layer may be formed on the active surface of the wafer in a wafer fab, and then sent to a bump fab for the remaining bump process, where The metal layer formed in the fab can be the entire structure or a part of the structure of the ball-bottom metal layer. However, it must be noted that during the process from the wafer to the bump factory, the wafer is located on the surface. The material of the metal layer must not be susceptible to oxidation reaction with air, so the metal layer of the surface layer cannot be at least copper. To sum up, the wafer transportation process of the present invention, because the metal layer used to prevent the pads from being exposed to the outside is an adhesive layer for making bumps, so the process of forming an adhesive layer before wafer transportation can be And the following bump system 8 (Please read the precautions on the back before filling this page) Binding and binding line_ This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) 83.3. 10,000 510012 8460twf〇doc / 009 A7 B7 V. Description of the invention (q) Process integration, so it is very efficient in the manufacturing process, which can reduce manufacturing costs. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Anyone skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. -------- Installation · ---- ^ --- Order ----- »line (Please read the precautions on the back before filling out this page) Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^ 83 3. 10,000 paper sizes are applicable to China National Standard (CNS) A4 (210X297mm)