508371 經濟部智慧財產局員工消費合作社印製 A7 ___B7_____ 五、發明說明（1 ) 【發明領域】 本發明係關於電漿c V D裝置，特別是關於在液晶顯 示裝置的製造工程中，在玻璃基板上藉由TEOS/ 〇 2 系電漿C V D法，形成S i 0 2膜的電漿C V D裝置。 【發明背景】 【習知技藝之說明】 在大面積的玻璃基板以低溫形成膜質良好的介電層之 方法有T E〇S /〇2系電漿C V D法。圖5的符號1 1 〇 係表示T E〇S /〇2系電漿C V D裝置的習知技術，其具 有真空槽1 1 2。真空槽1 1 2的外部配設真空排氣系 123，若啓動真空排氣系123的話，可真空排氣真空 槽1 1 2的內部來構成。 在真空槽1 1 2的頂端側，在與真空槽1 1 2電絕緣 的狀態下配設電極1 3 1。 另一方面，在真空槽1 1 2外配置電壓源1 2 2，在 將真空槽1 1 2置於接地電位的狀態下，可對電極1 3 1 施加高頻電壓來構成。 在真空槽1 1 2內部的底壁上配置台座1 1 7 ·，其表 面安裝載置台1 1 8。 載置台118其剖面圖如圖6 (a)所示，具有兩片 板狀構件1 5 3 、1 5 4以及線狀的鞘加熱器（Sheath heater ) 155。各板狀構件153、154的表面如圖 6 (b)所示，形成規定圖案（Pat tern)的溝槽 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ~ ~ --------------------訂 -------ί 線 (請先閱讀背面之注音？事項再填寫本頁) 508371 A7 -B7 五、發明說明（2 ) 16 5° 各板狀構件1 5 3、1 5 4係在互相緊貼的狀態下， 使各溝槽1 6 5互相重疊來緊貼配置。鞘加熱器1 5 5係 被彎曲成與這些溝槽1 6 5相同的形狀，在各板狀構件 1 j 3 Γ 5 4爲緊貼狀態下，配置於形成於各表面的溝 槽1 6 5之間所形成的空間內，與兩片板狀構件1 5 3、 1 5 4的兩側緊貼。 鞘加熱器1 5 5係連接配置於真空槽1 1 2外的未圖 示的電源。載置台1 1 8在載置基板1 2 1於板狀構件 1 5 3的狀態下，若啓動該電源對鞘加熱器1 5 5通電的 話’配設在其內部的電阻發熱體（未圖示）發熱，使板狀 構件1 5 3、1 5 4整體被均勻加熱，可使基板1 2 1均 勻地升溫。 電極1 3 1具有電極本體1 1 3與噴淋板1 1 6。 電極本體1 1 3係成形爲容器狀，在容器底面部分連 接氣體導入管（Pipe ) 119的一端。氣體導入管 1 1 9的另一端係連接未圖示的氣體鋼瓶（Gas bomb )， 在電極本體1 1 3的容器狀空間中以可導入氣體來構成。 噴淋板1 1 6係被固定以閉塞電極本體1 Γ 3'的容器 開口部，空間因藉由電極本體1 1 3與噴淋板1 1 6而形 成。 噴淋板1 1 6形成多數個孔1 1 5，氣體自氣體導入 管1 1 9導入空間內的話，此空間變成氣體貯存室1 1 4 ，導入氣體一旦充滿，接著，可自各孔1 1 5吹向真空槽 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱) ~ ' · (請先閱讀背面之注音？事項再填寫本頁) --------訂-------11 線· 經濟部智慧財產局員工消費合作社印製 508371 經濟部智慧財產局員工消費合作社印^^ A7 B7 五、發明說明（3 ) 1 1 2內來構成。 使用這種構成的電漿CVD裝置1 1 0，利用 τ E 〇 S/〇2系電漿c V D法在複數個玻璃基板表面形成 s i〇2膜時，首先，利用真空排氣系1 2 3真空排氣真空 槽1 1· 2內，並且，對鞘加熱器1 5 5通電，加熱載置台 1 1 8使其升溫。真空槽1 1 2內的壓力變成規定壓力， 並且，載置台1 1 8被升溫到規定溫度後，維持真空狀態 ’同時傳入第一片基板1 2 1到真空槽1 1 2內，載置於 載置台1 1 8上。 基板1 2 1被升溫到規定溫度後，導入反應性氣體到 氣體貯存室1 1 4內，自噴淋板1 1 6吹向基板1 2 1表 面。 在該狀態下啓動電壓源1 2 2，若對電極1 3 1施加 高頻的交流電壓，則產生放電，藉由該放電產生電漿，使 原料氣體被分解，在基板1 2 1表面透過氣相成長於基板 1 2 1表面形成S i 0 2膜。 在形成規定膜厚的S 1 0 2膜後，停止高頻功率的供給 與反應性氣體、稀釋氣體的導入，利用未圖示的傳送系將 基板1 2 1傳送到真空槽1 1 2外。 接著，將未處理的基板重新傳送到真空槽1 1 2內， 在載置於載置台1 1 8上後，經由與上述工程相同的工程 ，在所傳入的基板表面形成規定膜厚的S i 〇2膜。藉由重 複以上的作業，可在複數個基板表面形成S i 〇2膜。 利用這種T E〇S /〇2系電漿C V D法’因反應性氣 ---I----I----- (請先閱讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -6 - 508371 經濟部智慧財產局員工消費合作社印制衣 Α7 Β7 五、發明說明（4 ) 體在電漿中被活化（Activate )，故即使在較低溫，基板 1 2 1也能形成薄膜。 而若加大真空槽1 1 2的容量且使其可收容大面積的 基板的話，即使在較大基板表面，也能藉由電漿C V D法 形·成較均勻的薄膜。 但是，上述形成膜的方法若在同一真空槽內，連續在 複數個基板形成薄膜的話，會發生形成膜的速度慢慢降低 的問題。 .本發明的發明者們進行了令各基板的處理時間爲一定 ’在複數個棊板表面於同一真空槽內連續形成S i〇2膜時 ’調查基板的處理片數與形成於各基板的S i〇2膜的膜厚 關係之實驗。圖7的曲線（Y )顯示其實驗結果。圖7中 橫軸表示基板的處理片數，縱軸表示第一片基板的膜厚當 作1時的形成於各基板表面的薄膜膜厚（以下稱爲規格化 膜厚）。 如曲線（Y )所顯示的，每當基板的處理片數增加， 則形成膜的速度降低，第1 2片基板的規格化膜厚約 〇 · 8 5爲形成於第一片基板的薄膜膜厚之8 5%左右， 確認了每當處理片數增加，則形成膜的速度降低。… · 【發明槪要】 本發明係爲解決上述習知技術的情況不佳而創作的， 其目的爲提供在複數個基板上連續形成介電層時，即使處 理片數增加，也能減小形成膜的速度降低的技術。 i紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公楚) ΓΤ^ --- .1 I I Γ · I--I I I I t 111!! (請先閱讀背面之注意事項再填寫本頁) 508371 經濟部智慧財產局員工消費合作社印制衣 A7 —---- B7 _ 五、發明說明（5 ) 本發明的發明者們調查了關於在習知裝置中形成膜的 速度降低的原因。 習知裝置中噴淋板1 1 6係由耐熱耐蝕鎳基合金（ Hastelloy )製的板與形成於其表面的氧化鋁薄膜所構成， 另一方面，構成載置台1 1 8的各板狀構件1 5 3、 1 5 4如圖6 ( a )所不，係由石墨碳（Carbongraphite ) 板1 6 3、1 6 4與利用火焰噴塗法（Flame spray coating )在各表面形成的氧化鋁膜173、174所構成。噴淋 板1 1 6與板狀構件1 5 3、1 5 4的材質不同。 T E〇S/〇2系電漿C VD法其形成膜的速度大大地 被真空槽內的溫度左右，惟習知裝置因如上述噴淋板與載 置台的材質不同，故噴淋板的溫度變化率與載置台的溫度 變化率不同。因此，本發明的發明者們推測在處理片數增 加真空槽內的溫度變化時，真空槽內的溫度分布不均勻爲 形成膜的速度降低的原因之一。 以相關的推測爲基礎，改變載置台與噴淋板的材質， 重複實驗的結果發現：藉由表面形成氧化鋁膜的鋁來構成 載置台與噴淋板兩者，即使基板的處理片數增加，各基板 形成膜的速度也約略一定。 … . 本發明乃根據相關的知識而創作’申請專利範圍第一 項所述的發明，其特徵包含： 真空槽； 電極，配設於該真空槽內；以及 載置台，配設於該真空槽內’可具有載置基板的載置 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） .VI.---^---------^-------- (請先閱讀背面之注意事項再填寫本頁) 508371 A7 B7 經濟部智慧財產局員工消費合作社印製 I、發明說明（6 ) 面； 其中該電極具備： 電極本體； 噴淋板，配設於該電極本體的該載置面側；以及 ~氣體貯存室，形成於該電極本體與該噴淋板之間，用 以可導入氣體到內部來構成，其中 導入到該氣體貯存室的原料氣體係由設置於該噴淋板 的複數個孔吹向該載置台，對該電極施加電壓產生放電， 胃由該放電以該基板與該噴淋板之間的所產生的電漿分解 該原料氣體，透過氣相成長在基板表面形成薄膜，該載置 台與該噴淋板係由鋁所構成，至少在該載置台的該載置面 與該噴淋板的該載置面之對向的表面形成氧化鋁膜。 申請專利範圍第二項所述的發明係申請專利範圍第一 項所述的電漿C VD裝置，其特徵爲該載置台其內部具有 發熱體，在載置該基板的狀態下，可加熱該基板來構成。 申請專利範圍第三項所述的發明係申請專利範圍第二 項所述的電漿C V D裝置，其中該載置台形成該氧化鋁膜 ，具有配置該基板的板狀構件，該發熱體配置於該板狀構 件底面下。 藉由以上的構成，即使基板的處理片數增加，各基板 中的形成膜的速度也幾乎不降低，約略一定。 之 明 1發 明本 說明 單說 簡係 之 1 式圖 圖 的 置 裝 D V C 漿 電 的 態 形 施 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公釐） -9 - --------------------^--------- (請先閱讀背面之注意事項再填寫本頁) 观371 A7 B7 五、發明說明（ 剖面圖。 2si口’ 圖之 成 構 之 明 發 本 明 說 係 a 5in b 圖 俯 的 件 構 狀 板 的 態 形 施 實 - 之 明 發 本 明 說 係 •圖 視 c 咅 的 器 熱 加 鞘 的 態 形 施 實 1 之 明 發 本 明 說 係 圖 面 之之 月明一又發 本本 明明 說說。 係係圖 3 4 果 圖圖效 用 作 態 形 施 態 形 施508371 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ___B7_____ V. Description of the Invention (1) [Field of the Invention] The present invention relates to a plasma c VD device, especially to a glass substrate in a manufacturing process of a liquid crystal display device A plasma CVD apparatus for forming a Si02 film by a TEOS / 02-based plasma CVD method. [Background of the invention] [Explanation of the know-how] A method for forming a dielectric layer with a good film quality at a low temperature on a large-area glass substrate is the TEOS / 〇2 plasma CVD method. The reference numeral 1 10 in FIG. 5 indicates a conventional technique of a T EOS / 〇2 plasma CV D device, which has a vacuum tank 1 1 2. A vacuum exhaust system 123 is provided outside the vacuum tank 1 12. If the vacuum exhaust system 123 is activated, the interior of the vacuum tank 1 12 can be evacuated. An electrode 1 3 1 is disposed on the front end side of the vacuum tank 1 1 2 while being electrically insulated from the vacuum tank 1 12. On the other hand, a voltage source 1 2 2 is arranged outside the vacuum tank 1 12, and a high-frequency voltage can be applied to the electrode 1 3 1 with the vacuum tank 1 12 at a ground potential. A pedestal 1 1 · · is arranged on the bottom wall inside the vacuum tank 1 1 2, and a mounting table 1 1 8 is mounted on the surface. As shown in FIG. 6 (a), a cross-sectional view of the mounting table 118 includes two plate-like members 1 3 5 and 15 4 and a linear sheath heater 155. The surface of each plate-shaped member 153, 154 is shown in FIG. 6 (b), and grooves with a predetermined pattern (Pat tern) are formed. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ~ ~- ------------------- Order ------- ί Line (Please read the note on the back? Matters before filling out this page) 508371 A7 -B7 V. Invention Explanation (2) 16 5 ° Each plate-shaped member 1 5 3, 1 5 4 is in a state of being in close contact with each other, and each groove 1 6 5 is overlapped with each other to be closely arranged. The sheath heater 1 5 5 is bent into the same shape as these grooves 1 6 5, and the plate-shaped members 1 j 3 Γ 5 4 are placed in the grooves 1 6 5 formed on each surface in a close contact state. The space formed between them is in close contact with two sides of the two plate-shaped members 1 5 3 and 1 5 4. The sheath heater 1 5 5 is connected to a power source (not shown) arranged outside the vacuum tank 1 1 2. The mounting table 1 1 8 is a state where the substrate 1 2 1 is placed on the plate-shaped member 1 5 3 and the sheath heater 1 5 5 is energized when the power source is turned on. ) Heat, so that the entire plate-shaped member 1 5 3, 1 5 4 is uniformly heated, and the substrate 1 2 1 can be uniformly heated. The electrode 1 3 1 includes an electrode body 1 1 3 and a shower plate 1 1 6. The electrode body 1 1 3 is formed in a container shape, and one end of a gas introduction pipe (Pipe) 119 is connected to a bottom portion of the container. The other end of the gas introduction pipe 1 1 9 is connected to a gas bomb (not shown), and is configured so that gas can be introduced into the container-shaped space of the electrode body 1 1 3. The shower plate 1 1 6 is a container opening fixed to the electrode body 1 Γ 3 ′, and the space is formed by the electrode body 1 1 3 and the shower plate 1 1 6. The shower plate 1 1 6 forms a plurality of holes 1 1 5. If the gas is introduced into the space from the gas introduction pipe 1 1 9, this space becomes a gas storage chamber 1 1 4. Once the introduced gas is filled, then the holes can be opened from each hole 1 1 5 Blowing to the vacuum tank The paper size is applicable to China National Standard (CNS) A4 specifications (210 X 297 public love) ~ '((Please read the note on the back? Matters before filling out this page) -------- Order- ------ Line 11 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 508371 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^^ A7 B7 V. Description of Invention (3) 1 1 2 When a plasma CVD apparatus 1 10 of this configuration is used and a SiO 2 film is formed on the surfaces of a plurality of glass substrates by a τ E 〇S / 〇2 plasma c VD method, first, a vacuum exhaust system 1 2 3 is used. The inside of the vacuum evacuating chamber 1 1 2 was also evacuated, and the sheath heater 1 5 5 was energized, and the mounting table 1 1 8 was heated to raise the temperature. The pressure in the vacuum tank 1 1 2 becomes a predetermined pressure, and after the mounting table 1 1 8 is heated to a predetermined temperature, the vacuum state is maintained. At the same time, the first substrate 1 2 1 is introduced into the vacuum tank 1 12 and placed. On the mounting table 1 1 8. After the substrate 1 2 1 is heated to a predetermined temperature, a reactive gas is introduced into the gas storage chamber 1 1 4 and blown from the shower plate 1 1 6 to the surface of the substrate 1 2 1. In this state, the voltage source 1 2 2 is started. When a high-frequency AC voltage is applied to the electrode 1 3 1, a discharge is generated, and a plasma is generated by the discharge, so that the raw material gas is decomposed, and the gas is transmitted on the surface of the substrate 1 2 1. The phases grow on the surface of the substrate 1 2 1 to form a S i 0 2 film. After the S 102 film having a predetermined film thickness is formed, the supply of high-frequency power and the introduction of the reactive gas and the diluent gas are stopped, and the substrate 1 2 1 is transferred to the outside of the vacuum tank 1 1 2 by a transfer system (not shown). Next, the unprocessed substrate is transferred into the vacuum tank 1 12 again, and after being placed on the mounting table 1 18, the same process as the above-mentioned process is performed to form S with a predetermined film thickness on the surface of the incoming substrate. i 〇2 film. By repeating the above operations, a S i 02 film can be formed on a plurality of substrate surfaces. Using this TE〇S / 〇2 series plasma CVD method 'Reactive gas --- I ---- I ----- (Please read the precautions on the back before filling this page) This paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) -6-508371 Printed clothing A7 by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (4) The body is activated in the plasma (Activate) Therefore, even at a relatively low temperature, the substrate 1 2 1 can form a thin film. On the other hand, if the capacity of the vacuum chamber 1 12 is increased and a large-area substrate can be accommodated, a uniform film can be formed and formed by the plasma C V D method even on a large substrate surface. However, if the method for forming a film described above is to form a thin film on a plurality of substrates continuously in the same vacuum chamber, there is a problem that the speed of forming a film gradually decreases. The inventors of the present invention made the processing time of each substrate constant. "When the S 102 film was continuously formed in the same vacuum chamber on the surfaces of a plurality of slabs," the number of processed substrates and the number of substrates formed on each substrate were investigated. An experiment on the relationship between the film thickness of the Si02 film. The curve (Y) in Fig. 7 shows the experimental results. In FIG. 7, the horizontal axis indicates the number of substrates processed, and the vertical axis indicates the film thickness of the first substrate when the film thickness is 1 (hereinafter referred to as the normalized film thickness). As shown by the curve (Y), each time the number of substrates processed increases, the speed of film formation decreases. The normalized film thickness of the 12th substrate is about 0.85, which is a thin film formed on the first substrate. The thickness was about 8 5%, and it was confirmed that each time the number of processed pieces increased, the rate of film formation decreased. … [Summary of the Invention] The present invention was created to solve the poor conditions of the above-mentioned conventional technology. The purpose of the invention is to provide a dielectric layer that can be continuously formed on a plurality of substrates. Technology for reducing the speed of film formation. i Paper size applies to China National Standard (CNS) A4 (210 X 297 cm) ΓΤ ^ --- .1 II Γ · I--IIII t 111 !! (Please read the precautions on the back before filling this page) 508371 Intellectual Property Bureau of the Ministry of Economic Affairs, printed clothing A7 of consumer cooperatives —---- B7 _ V. Description of the invention (5) The inventors of the present invention investigated the reasons for the decrease in the rate of film formation in conventional devices. The shower plate 1 1 6 in the conventional device is composed of a plate made of a heat-resistant and corrosion-resistant nickel-based alloy (Hastelloy) and an aluminum oxide film formed on the surface. On the other hand, each plate-like member constituting the mounting table 1 1 8 1 5 3, 1 5 4 As shown in Fig. 6 (a), the graphite carbon plate (Carbongraphite) plate 1 6 3, 1 6 4 and the alumina film 173 formed by flame spray coating on each surface are used. , 174. The shower plates 1 1 6 are different from the plate-shaped members 1 5 3, 1 5 4 in material. The speed of film formation of the TE〇S / 〇2 series plasma C VD method is greatly influenced by the temperature in the vacuum tank. However, the temperature of the shower plate is different because the materials of the shower plate and the mounting table are different. The change rate is different from the temperature change rate of the mounting table. Therefore, the inventors of the present invention have speculated that when the number of processing pieces increases and the temperature in the vacuum tank changes, the uneven temperature distribution in the vacuum tank is one of the reasons for the decrease in the rate of film formation. Based on related assumptions, the materials of the mounting table and the shower plate were changed. The results of repeated experiments found that both the mounting table and the shower plate were formed of aluminum with an aluminum oxide film formed on the surface, even if the number of substrate processing pieces increased. The speed of forming a film on each substrate is also approximately constant. …. The invention is based on the related knowledge and is the invention described in the first item of the patent application scope, which includes: a vacuum tank; an electrode disposed in the vacuum tank; and a mounting table disposed in the vacuum tank The size of the paper that can be loaded with the substrate inside is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). VI .--- ^ --------- ^ ---- ---- (Please read the precautions on the back before filling in this page) 508371 A7 B7 Printed on the I, Invention Description (6) surface of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs; where the electrode has: electrode body; spray plate Is arranged on the mounting surface side of the electrode body; and a gas storage chamber is formed between the electrode body and the shower plate, and is configured to be capable of introducing a gas into the interior, wherein the gas is introduced into the gas storage chamber The raw material gas system is blown to the mounting table through a plurality of holes provided in the shower plate, and a voltage is applied to the electrode to generate a discharge. The stomach is decomposed by the generated plasma between the substrate and the shower plate. This raw material gas passes through the vapor phase to form a thin film on the substrate surface The mounting table Department of the shower plate is made of aluminum, and the aluminum oxide film is formed on the surface of the mounting surface of the shower plate at least at the stage of the mounting surface. The invention described in the second item of the scope of patent application is the plasma C VD device described in the first item of the scope of patent application, characterized in that the mounting table has a heating element inside, and the substrate can be heated when the substrate is placed. Substrate. The invention described in the third item of the patent application is the plasma CVD apparatus described in the second item of the patent application, wherein the mounting table forms the alumina film, has a plate-like member on which the substrate is disposed, and the heating element is disposed on the Underneath the plate-like member. With the above configuration, even if the number of substrates to be processed increases, the speed of forming a film in each substrate is hardly reduced, and is approximately constant. Zhiming 1 Invention This description is a brief description of the first form of DVC plasma electricity. The paper size is applicable to China National Standard (CNS) A4 (210x 297 mm) -9----- ---------------- ^ --------- (Please read the precautions on the back before filling this page) View 371 A7 B7 V. Description of the invention (Sectional view) 。 2si 口 'Figure of the structure of the Mingfa Benming is a 5in b Figure of the structure of the shape of the plate implementation-Zhimingfa Benming Department of the Figure • c c The Mingfa of Ming 1 is clearly illustrated by Yue Ming of the drawing, and the Ming Ming is published by Ming Ben. Figure 3 4 The effect of the figure is used as a shape and shape.
J漿 J/ 8 里01 的一 I 的 \置 H裝 面：D 剖I V的一 板一J slurry J / 8 in 01 of I I \ set H surface: D section I V one board one
C 圖 面 。 剖 圖之 面成 剖構 勺 άΜ Aj 置台 裝置 D載 V的 C 知 漿習 電明 的說 知係 習 ： 明 } 說 a 係 C 5 6 圖圖 圖 視 俯。 的圖 件之 構點 狀題 板問 的的 知置 習裝 PHJ D 說習 係明 :說 } 係 b 7 C 圖 說 符 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製C drawing. The section of the sectional view is divided into two sections: Aj, the platform setting device, D, the V, the C, the knowledge, the knowledge, the knowledge, the knowledge, the knowledge, the knowledge, the description, and the C system. The structure of the point-like questions asked by the readers. The PHJ D commentary system: Speaking} Department b 7 C pictograms (please read the precautions on the back before filling this page) Staff of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by Consumer Cooperatives
0 2 3 4 5 6 8 IX IX IX 1^ 1—- IX TX 3 裝 D 室 V 體存 C 槽本貯 板台 漿空極體 淋置極 電真電氣孔噴載電 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -10· 經濟部智慧財產局員工消費合作社印製 508371 A7 _____________ B7 五、發明說明（8 ) 5 3、5 4 :板狀構件 6 1 :鋁板 61、62、63:氧化鋁膜 【被佳實施形態之詳細說明】 參照圖面說明本發明之實施形態。 在大面積的玻璃基板以低溫形成膜質良好的介電層之 方法有TE〇S/〇2系電榮CVD法。圖1的符號1 〇係 表示實施T E〇S /〇2系電漿c V D法的本實施形態之電 漿CVD裝置。此電漿CVD裝置1 〇具有真空槽1 2。 真空槽1 2的外部配設真空排氣系2 3 ，可真空排氣真空 槽1 2內來構成。 在真空槽1 2的.頂端側，在與真空槽1 2電絕緣的狀 態下配設電極3 1。 另一方面，在真空槽1 2外配置電壓源2 2 ，在將真 空槽1 2置於接地電位的狀態下，可對電極3 1施加高頻 電壓來構成。 在真空槽1 2內部的底壁上配置台座1 7，其表面安 裝載置台1 8。 … ’ 載置台1 8的表面被做成平坦，使該部分可水平載置 基板2 1來構成。該狀態的基板2 1表面係與電極3 1表 面並行對向。 載置台1 8其剖面圖如圖2 ( a )所示，具有兩片板 狀構件5 3、5 4以及線狀的鞘加熱器5 5。各板狀構件 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -11 - 裝--------訂— (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 508371 A7 __ B7 五、發明說明（9 ) 53 、54的表面如圖2 (b)所示，形成規定圖案的溝 槽6 5。 鞘加熱器5 5係被彎曲成與溝槽6 5相同的形狀，在 將鞘加熱器5 5放進溝槽6 5的狀態下，若使各板狀構件 5 3、5 4互相緊貼的話，鞘加熱器5 5係配置於各板狀 構件5 3 、5 4的兩側溝槽6 5內，與各板狀構件5 3、 5 4的兩側緊貼來構成。 鞘加熱器5如圖2 ( c )所示，具有由包含鉻1 6 %、鐵7 %的鎳系合金（商標名爲INCONEL )所構成的軟 管（Tube) 58。在軟管58內插通線狀的電阻發熱 體（N ! C r ) 5 6 ，充塡絕緣物（M g〇）5 7，透過 絕緣物5 7使軟管5 8與電阻發熱體5 6絕緣來構成。 鞘加熱器5 5係連接配置於真空槽1 2外的未圖示的 電源，在載置基板2 1於板狀構件5 3上的狀態下，若啓 動該電源對鞘加熱器5 5通電的話，電阻發熱體5 6發熱 ，使板狀構件5 3、5 4整體被均勻加熱，可使基板2 1 升溫來構成。 電極3 1具有電極本體1 3與噴淋板1 6。 電極本體1 3係成形爲容器狀，在容器底面部分連接 氣體導入管1 9的一端。氣體導入管1 9的另一端係連接 未圖示的氣體鋼瓶，在電極本體1 3的容器狀空間中以可 導入氣體來構成。 噴淋板1 6係被固定以閉塞電極本體1 3的容器開口 部，空間因藉由電極本體1 3與噴淋板1 6而形成。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -12- --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) A7 ------—--B7______ 五、發明說明（1〇 ) 噴淋板1 6形成多數個孔1 5，氣體自氣體導入管 1 9導入空間內的話，此空間變成氣體貯存室1 4，導入 (請先閱讀背面之注意事項再填寫本頁) 氣體一旦充滿，接著，可自各孔1 5吹向真空槽1 2內來 構成。 使用這·種電漿CVD裝置10，利用丁]£〇3/〇2系 電發C V D法在複數個玻璃基板表面形成s i〇2膜時，窜 先’利用真空排氣系2 3真空排氣真空槽1 2內，並且， 對鞘加熱器5 5·通電，加熱載置台1 8使其升溫。真空槽 1 2內的壓力變成規定壓力，並且，載置台1 8被升溫到 規定溫度後，維持真空狀態，同時傳入第一片基板2 1到 真空槽12內，載置於載置台18上。 基板2 1被升溫到規定溫度後，導入反應性氣體到氣 體貯存室14內，自噴淋板16吹向基板2 1表面。 在該狀態下啓動電壓源2 2，若對電極3 1施加高頻 的交流電壓，則產生放電，藉由放電產生電漿，使原料氣 體被分解，在基板2 1表面透過氣相成長於基板2 1表面 形成S i〇2膜。 經濟部智慧財產局員工消費合作社印製 在形成規定膜厚的S 1 0 2膜後，停止高頻功率的供給 與原料氣體的導入，利用未圖示的傳送系將基板2 Ί傳送 到真空槽1 2外。 接著將未處理的基板重新傳送到真空槽1 2內’在載 置於載置台1 8上後，經由與上述相同的工程’在所傳入 的基板表面形成規定膜厚的S ί〇2膜。藉由重複以上的作 業，可在複數個基板表面形成S ί〇2膜。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） -13 - 經濟部智慧財產局員工消費合作社印制π 508371 A7 B7 五、發明說明（11 ) 本實施形態的電漿c V D裝置1 0其上述的兩片板狀 構件5 3、5 4之剖面圖如圖2 ( a )所示，分別由鋁板 6 3、6 4以及利用陽極氧化法在各表面形成的氧化鋁膜 7 3、7 4所構成。 ’此處陽極氧化法係指在將鋁板與陰極材料浸漬於電解 質水溶液的狀態下，藉由對鋁板施加正電壓、對陰極材料 施加負電壓電分解電解質水溶液，透過電分解使水溶液內 部產生氧，藉由該氧與鋁的化學反應，在鋁板表面形成氧 化鋁膜的薄膜之方法。據此，因在所形成的氧化鋁膜薄膜 的表面形成多數個孔，故使氧化鋁膜薄膜暴露於高溫的水 蒸氣塡埋孔，以提高氧化鋁膜薄膜的耐腐蝕性（Corrosion resistance )。 此外，噴淋板1 6其剖面圖如圖3所示’與載置台 1 8的板狀構件5 3、5 4相同，由形成複數個孔1 5的 鋁板6 1以及利用陽極氧化法在其全表面形成的氧化鋁膜 6 2所構成。 如此一來，本實施形態的電漿c v D裝置1 〇配置於 真空槽12內的噴淋板16與載置台18都由表面形成氧 化鋁膜的鋁所構成。 如此，藉由將熱傳導率良好的鋁當作母材來使用’因 少量抑制基板的取出放入或形成膜前後的溫度變化’故和 噴淋板116與載置台118的材質不同的習知比較’真 空槽內的溫度分布均勻。因此，形成膜的速度大大地被真 空槽內的溫度分布左右的丁EOS/〇2系電漿CVD法’ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -14 - --------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 508371 A7 B7 五、發明說明（12 ) 即使在複數個基板連續形成膜時’也能使各基板的形成膜 的速度約略一定。 本發明的發明者們使用本實施形態的電漿c V D裝置 1 0，進行了令各基板的處理時間爲一定，在複數個基板 表’面於同一真空槽內連續形成s i 0 2膜時，調查基板的處 理片數與形成於各基板的S i 0 2膜的膜厚關係之實驗。圖 4的曲線（X )顯示其實驗結果。圖4中橫軸表示基板的 處理片數，縱軸表示第一片基板的膜厚當作1時的形成於 各基板表面的薄膜膜厚（以下稱爲規格化膜厚）。 如曲線（X )所顯示的，第1 2片基板的規格化膜厚 約0 · 9 8爲形成於第一片基板的薄膜膜厚之9 8 %，確 認了使用本實施形態的電漿C V D裝置1 〇時，即使基板 的處理片數增加，而形成膜的速度也幾乎不降低。 此外，本實施形態雖然以陽極氧化法形成氧化鋁膜， 惟本發明並非限定於此，例如利用火焰噴塗法來形成膜也 可以。 此外，本實施形態雖然在構成載置台1 8的板狀構件 53、54全面形成氧化鋁膜7.3、74，在噴淋板16 的全表面形成氧化鋁膜6 2，惟本發明並非限定於"此，關 於載置台1 8，至少在載置基板的面形成氧化鋁膜也可以 ，而且’關於噴淋板1 6，至少在與基板對向的面形成氧 化鋁膜也可以。 再者’本實施形態雖然以載置台1 8具有兩片板狀構 件5 3、5 4 ’惟本發明並非限定於此，例如像是以在一 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -15- I-------·-------- I -訂—I--丨丨丨-線 (請先閱讀背面之注意事項再填寫本頁) 508371 A7 B7 五、發明說明（13 ) 片板狀構件中埋入鞘加熱器的構成也可以。 而且，本實施形態雖然在載置台1 8內部配設鞘加熱 器5 5 ’在載置基板的狀態下可使基板升溫來構成，惟本 發明的載置台並非限定於此，不以使基板升溫來構成也可 以·。. _ ’ 【發明的效果】 即使在複數個基板連續形成膜，也能使形成膜的速度 約略一定。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -16- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）0 2 3 4 5 6 8 IX IX IX 1 ^ 1—- IX TX 3 Installed in D room, V, C storage, Slot storage plate, slurry, empty electrode, electrode, true electric hole, sprayed electricity, paper size, applicable to China. Standard (CNS) A4 specifications (210 X 297 mm) -10 · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 508371 A7 _____________ B7 V. Description of the invention (8) 5 3, 5 4: Plate-shaped member 6 1: Aluminum plate 61, 62, 63: Alumina film [Detailed description of the preferred embodiment] The embodiment of the present invention will be described with reference to the drawings. A method for forming a dielectric layer with a good film quality on a large-area glass substrate at a low temperature is a TEOS / 〇2 electro-chemical CVD method. Reference numeral 10 in FIG. 1 indicates a plasma CVD apparatus according to the present embodiment which implements a T EOS / 〇2 plasma cV D method. This plasma CVD apparatus 10 has a vacuum tank 12. A vacuum exhaust system 2 3 is arranged outside the vacuum tank 12 and can be constructed by vacuum exhausting the inside of the vacuum tank 12. An electrode 31 is provided on the top end side of the vacuum chamber 12 in a state of being electrically insulated from the vacuum chamber 12. On the other hand, a voltage source 2 2 is disposed outside the vacuum tank 12, and a high-frequency voltage can be applied to the electrode 31 with the vacuum tank 12 at a ground potential. A pedestal 17 is arranged on the bottom wall inside the vacuum tank 12, and a mounting table 18 is mounted on the surface. … ”The surface of the mounting table 18 is made flat so that the substrate 21 can be horizontally mounted on this part. The surface of the substrate 21 in this state faces the surface of the electrode 31 in parallel. As shown in FIG. 2 (a), the mounting table 18 has two plate-like members 5 3, 5 4 and a linear sheath heater 55. The paper size of each plate-shaped member applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -11-installed -------- order-(Please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 508371 A7 __ B7 V. The surface of the invention description (9) 53 and 54 is shown in Figure 2 (b), forming a groove 6 5 with a prescribed pattern. The sheath heater 5 5 is bent into the same shape as the groove 65. When the sheath heater 5 5 is placed in the groove 65, the plate-shaped members 5 3 and 5 4 are brought into close contact with each other. The sheath heater 5 5 is arranged in the grooves 65 on both sides of each of the plate-like members 5 3 and 5 4, and is in close contact with the sides of each of the plate-like members 5 3 and 5 4. As shown in FIG. 2 (c), the sheath heater 5 includes a flexible tube (Tube) 58 made of a nickel-based alloy (trade name INCONEL) containing 16% chromium and 7% iron. A linear resistance heating element (N! C r) 5 6 is inserted into the hose 58, and an insulator (M g〇) 5 7 is filled, and the hose 5 8 and the resistance heating element 5 6 are passed through the insulation 5 7. Constructed from insulation. The sheath heater 5 5 is connected to a power source (not shown) arranged outside the vacuum tank 12. When the substrate 2 1 is placed on the plate-shaped member 5 3 and the sheath heater 5 5 is turned on when the power source is turned on. The resistive heating element 56 generates heat to uniformly heat the plate-like members 5 3 and 5 4 so that the substrate 2 1 can be heated up. The electrode 31 includes an electrode body 13 and a shower plate 16. The electrode body 13 is formed in a container shape, and one end of a gas introduction tube 19 is connected to a bottom portion of the container. The other end of the gas introduction pipe 19 is connected to a gas cylinder (not shown), and is configured so that gas can be introduced into the container-like space of the electrode body 13. The shower plate 16 is fixed to close the container opening of the electrode body 13 and the space is formed by the electrode body 13 and the shower plate 16. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -12- -------------------- Order ------- --Line (please read the precautions on the back before filling this page) A7 ---------- B7______ 5. Description of the invention (10) The shower plate 16 forms a plurality of holes 15 and the gas is from gas If the introduction tube 19 is introduced into the space, this space becomes the gas storage room 1 4 for introduction (please read the precautions on the back before filling this page). Once the gas is filled, it can be blown into the vacuum tank 12 from each hole 15 To constitute. When using this type of plasma CVD apparatus 10, the SiO 2 / 〇 2 series electro-chemical CVD method is used to form a SiO 2 film on the surface of a plurality of glass substrates. In the vacuum chamber 12, the sheath heater 5 5 · is energized, and the mounting table 18 is heated to raise the temperature. The pressure in the vacuum chamber 12 becomes a predetermined pressure, and after the mounting table 18 is heated to a predetermined temperature, the vacuum state is maintained, and the first substrate 21 is introduced into the vacuum chamber 12 and placed on the mounting table 18. . After the substrate 21 is heated to a predetermined temperature, a reactive gas is introduced into the gas storage chamber 14 and blown from the shower plate 16 toward the surface of the substrate 21. In this state, the voltage source 22 is activated. When a high-frequency AC voltage is applied to the electrode 31, a discharge is generated. The plasma is generated by the discharge, and the raw material gas is decomposed. The S 1 02 film was formed on the 2 1 surface. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, after forming a S 1 02 film with a predetermined film thickness, the supply of high-frequency power and the introduction of raw material gas are stopped, and the substrate 2 Ί is transferred to a vacuum tank using a transfer system not shown 1 2 outside. Next, the unprocessed substrate is transferred into the vacuum tank 12 again. "After being placed on the mounting table 18, the same process as described above is performed through the same process as described above." . By repeating the above operations, a S02 film can be formed on a plurality of substrate surfaces. This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) -13-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 508 371 A7 B7 V. Description of the invention (11) Plasma c in this embodiment The cross-sectional view of the two plate-shaped members 5 3 and 5 4 of the VD device 10 is shown in FIG. 2 (a), and the aluminum plates 6 3 and 6 4 and the aluminum oxide film formed on each surface by the anodization method are shown in FIG. 2 (a). 7 3, 7 4 constitute. 'The anodic oxidation method here means that in a state in which an aluminum plate and a cathode material are immersed in an electrolyte aqueous solution, a positive voltage is applied to the aluminum plate and a negative voltage is applied to the cathode material to electrolytically decompose the electrolyte aqueous solution, and oxygen is generated inside the aqueous solution through electrolysis. A method of forming a thin film of an aluminum oxide film on the surface of an aluminum plate by the chemical reaction between oxygen and aluminum. Accordingly, since a large number of holes are formed on the surface of the formed alumina film, the holes are buried by exposing the alumina film to high temperature water vapor to improve the corrosion resistance of the alumina film. In addition, the cross-sectional view of the shower plate 16 is shown in FIG. 3 'It is the same as the plate-like member 5 3, 5 4 of the mounting table 18, and an aluminum plate 6 1 formed with a plurality of holes 15 is formed by The alumina film 62 is formed on the entire surface. In this way, the plasma cv D device 100 of the present embodiment is configured by the shower plate 16 and the mounting table 18 which are arranged in the vacuum tank 12 and are made of aluminum with an aluminum oxide film formed on the surface. In this way, by using aluminum having a good thermal conductivity as a base material, 'the temperature change before and after the substrate is taken out or put into a film is suppressed by a small amount', it is compared with the conventional practice that the materials of the shower plate 116 and the mounting table 118 are different. 'The temperature distribution in the vacuum tank is uniform. Therefore, the rate of film formation is greatly influenced by the temperature distribution in the vacuum tank of the EOS / 〇2 plasma CVD method. 'This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297 mm) -14- -------- Order --------- line (please read the notes on the back before filling out this page) Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 508371 A7 B7 V. Description of the invention ( 12) Even when a plurality of substrates are continuously formed into a film, the film formation speed of each substrate can be made approximately constant. The inventors of the present invention used the plasma c VD device 10 of this embodiment to make the processing time of each substrate constant, and to continuously form a si 0 2 film in the same vacuum chamber on a plurality of substrate surfaces, An experiment investigating the relationship between the number of substrates processed and the film thickness of the Si 0 2 film formed on each substrate. The curve (X) in Fig. 4 shows the experimental results. In Fig. 4, the horizontal axis indicates the number of substrates processed, and the vertical axis indicates the film thickness (hereinafter referred to as the normalized film thickness) of the thin film formed on the surface of each substrate when the film thickness of the first substrate is taken as 1. As shown by the curve (X), the normalized film thickness of the 12th substrate is about 0.88, which is 98% of the film thickness of the thin film formed on the first substrate. It is confirmed that the plasma CVD using this embodiment is used. In the case of the device 10, even if the number of substrates to be processed increases, the speed of film formation is hardly reduced. Although an alumina film is formed by the anodizing method in the present embodiment, the present invention is not limited to this. For example, the film may be formed by a flame spraying method. In this embodiment, although the aluminum oxide films 7.3 and 74 are formed on the plate-like members 53 and 54 constituting the mounting table 18 and the aluminum oxide film 62 is formed on the entire surface of the shower plate 16, the present invention is not limited to & quot Here, regarding the mounting table 18, an alumina film may be formed at least on the surface on which the substrate is mounted, and 'for the shower plate 16, an alumina film may be formed at least on the surface facing the substrate. Furthermore, although the present embodiment has two plate-like members 5 3 and 5 4 on the mounting table 18, the present invention is not limited to this. For example, the Chinese National Standard (CNS) A4 specification is applied on a paper scale. (210 X 297 mm) -15- I ------- · -------- I-Order-I-- 丨 丨 丨 -Line (Please read the precautions on the back before filling in this (Page) 508371 A7 B7 V. Description of the invention (13) A sheath heater may be embedded in a plate-like member. In addition, although the sheath heater 5 5 ′ is arranged inside the mounting table 18 in the present embodiment to increase the temperature of the substrate in a state where the substrate is mounted, the mounting table of the present invention is not limited to this and the substrate is not required to be heated. You can also construct it. _ ’[Effect of the Invention] Even if a film is formed continuously on a plurality of substrates, the speed of film formation can be made approximately constant. (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -16- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)