502301 A7502301 A7
五、發明說明（） 發明領域： 經濟部智慧財產局員工消費合作社印製 本發明係有關於一種化學劑供給（Dispenser System)系 統，特別是有關於一種可以臨場（In_Situ)方式進行晶圓清洗 及後續之去光阻（phot〇resist Stripping; pfls)的步驟之化學 劑供給系統。 發明背景： 一般在晶圓的製造過程中，當蝕刻製程完成後，已不 須再使用光阻時，便須將光阻去除，以利下一道步驟之進 灯。去除光阻之方法主要有溼式去光阻法及乾式去光阻法 兩種，屋式去光阻法係利用有機或無機之去光阻液將光阻 溶入去除，而乾式去光阻法則利用電漿對光阻進行反應性 蝕刻而將光阻剝除。為使光阻完全去除乾淨，去光阻之進 行通常採用溼式去光阻法及乾式去光阻法兩種方法互相搭 配使用。另外，在乾式去光阻步驟和溼式去光阻步驟之間， 必須對晶圓加以清洗，以去除雜質和光阻殘餘等。 半導體蝕刻機台，例如美國LAM Research公司之 TCP9600金屬餘刻機台（Metal Etching)，通常具有三個主要 系統.主反應至（Main Chamber)、DSQ(Decoupled Source Quartz)反應室和APM系統。其中，金屬蝕刻係在主反應 2 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） {請先閱讀背面之注意事項再填寫本頁) 裝 --線—· · 502301 B7 五、發明說明（） 室中以乾式蝕刻的方式進行，DSQ反應室亦以乾式去光阻 法來去除晶圓之光阻，而APM系統則先將晶圓吸附於旋轉 裝置上，再注入例如去離子水（D.I· Water)和氮氣（n2)來清 洗晶圓’兼具有冷卻和防晶圓腐蝕的功能。如第1圖所示， 第1圖為繪示習知金屬蝕刻機台之ApM系統的結構示意 圖。習知金屬蝕刻機台至少包括··機台座1 〇〇，其中此機 台座1 0 0具有排除孔6 0，藉以排除液體，例如去離子水； 旋轉裝置30安裝於機台座1〇〇，此旋轉裝置30更至少包 括旋轉馬達3〇m、晶圓吸附裝置（Chuck)3〇c以及傳動軸 3 0s，其中傳動軸30s係連結旋轉馬達30m和晶圓吸附裝 置3 0c，以旋轉晶圓吸附裝置3 0c ’並藉由旋轉所產生的白 努利（Bernoulli)效應將晶圓80吸附於晶圓吸附裝置3〇c 上；氣體喷灑裝置20安裝於機台座1〇〇,藉以噴麗氣體， 例如氮氣，於晶圓80上；以及液體喷灑裝置1 〇安裝於機 台座1 00，藉以喷灑液體，例如去離子水，於晶圓8 〇上， 其中此液體喷灑裝置1〇有一相對應之液體排除裝置 110,此液體排除裝置110至少包括收集元件l1〇b和連接 管件1 1 0 d，其中此收集元件1 1 0 b可係例如漏斗型，而連 接管件1 10d係將液體由機台座100之排除孔6〇經收集元 經濟部智慧財產局員工消費合作社印製 *裝--- (請先閱讀背面之注意事項再填寫本頁) 件1 l〇b排除。習知金屬蝕刻機台之APM系統弁如去“ %起動旋轉 馬達3 0m，再注入例如去離子水和氮氣來清洗晶圓8 〇 更有冷卻和防晶圓8 0腐蝕的功能。 502301 A7 B7 五、發明說明（ 在完成金屬蝕刻機台之APM系統的晶圓清洗步驟之 後，以溼式去光阻法進行PRS的步驟，藉以將晶圓上的光 阻完全去除乾淨。此PRS的步驟通常使用例如美國Ashland 化學公司所製造之ACT690溶液和NMP (l-methyl-2-pyrrolidone)來去除殘餘光阻，其_ ACT690係藉以去除殘 餘光阻，而NMP則係用來中和ACT690。進行此Prs的步 驟之後亦需使用例如去離子水和氮氣以清洗晶圓。 近來，愈來愈多的半導體蝕刻機台採用晶圓自動清洗 (Wafer Auto Cleaning ; WAC)模式來進行蝕刻，藉以延長預 防性維修（Preventive Maintenance ; PM)的週期。所謂 係一片晶圓於主反應室完成蝕刻之後，立即清洗此主反房 至’使主反應至付以保持乾淨’因而減少微粒污染並可延 後進行PM的時間，進而提昇晶圓品質及減少進行pM所需 花費的時間與金錢。然而，蝕刻機台採用WAC模式時，由 於晶圓必須等待主反應室清洗之後才能進入主反應室進行 勉刻’製程的速率會因增加等待的時間而變慢，因此，钱 刻機台採用WAC模式時的每小時處理晶圓的逮率 Per Hour ; WPH)會比不採用WAC模式時低。如何彌補上 述之WPH的損失便成為一大課題。 (請先閱讀背面之注意事項再填寫本頁) 裝 •4 經濟部智慧財產局員工消費合作社印製 發明目的及概述： 502301 A7V. Description of the Invention () Field of the Invention: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics The present invention relates to a chemical agent supply (Dispenser System) system, and in particular to a method for cleaning wafers on the spot (In_Situ) and A chemical agent supply system for subsequent steps of removing strips (photoresist stripping; pfls). Background of the invention: Generally, in the wafer manufacturing process, when the photoresist is no longer needed after the etching process is completed, the photoresist must be removed to facilitate the next step of the lamp. There are two main methods for removing photoresist: wet and dry photoresist. The house photoremoval method uses organic or inorganic photoresist to dissolve the photoresist, and dry photoresist. The rule uses a plasma to reactively etch the photoresist to strip the photoresist. In order to completely remove the photoresist, the photoresist removal method is usually used in combination with the wet photoresist method and the dry photoresist method. In addition, between the dry photoresist removal step and the wet photoresist removal step, the wafer must be cleaned to remove impurities and photoresist residues. Semiconductor etching machines, such as TCP9600 Metal Etching from LAM Research in the United States, usually have three main systems: a main chamber, a decoupled source quartz (DSQ) reaction chamber, and an APM system. Among them, the metal etching is in the main reaction 2 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 meals) {Please read the precautions on the back before filling this page) Installation-line-· · 502301 B7 5. Description of the invention () The dry etching method is used in the chamber. The DSQ reaction chamber also uses the dry photoresist method to remove the photoresist of the wafer. The APM system first adsorbs the wafer on a rotating device and then injects it into, for example, De-ionized water (DI · Water) and nitrogen (n2) to clean the wafer 'both have the functions of cooling and preventing wafer corrosion. As shown in FIG. 1, FIG. 1 is a schematic diagram showing a structure of an ApM system of a conventional metal etching machine. The conventional metal etching machine includes at least a machine platform 100, wherein the machine platform 100 has a removal hole 60 for excluding liquids, such as deionized water; the rotating device 30 is installed on the machine platform 100, where The rotation device 30 further includes at least a rotation motor 30m, a wafer adsorption device (Chuck) 30c, and a transmission shaft 30s. The transmission shaft 30s is connected to the rotation motor 30m and the wafer absorption device 30c to rotate the wafer adsorption. The device 3 0c ′ and the wafer 80 is adsorbed on the wafer adsorption device 3c by the Bernoulli effect generated by the rotation; the gas spraying device 20 is installed on the machine base 100 to spray the gas For example, nitrogen gas is on the wafer 80; and the liquid spraying device 10 is installed on the machine base 100 to spray liquid, such as deionized water, on the wafer 80, and the liquid spraying device 10 has a Corresponding liquid draining device 110 includes at least a collecting element 110b and a connecting pipe 1 1 0 d, wherein the collecting element 1 1 0 b may be, for example, a funnel type, and the connecting pipe 1 10d is a liquid From the exclusion hole 60 of the machine base 100 Set metadata Ministry of Economic Affairs Intellectual Property Office employees consumer cooperatives printing equipment --- * (Please read the notes on the back of this page and then fill in) pieces 1 l〇b excluded. The APM system of the conventional metal etching machine is as follows: "% start the rotary motor 30m, and then inject deionized water and nitrogen to clean the wafer 800. It also has the function of cooling and preventing wafer 80 corrosion. 502301 A7 B7 V. Description of the invention (After completing the wafer cleaning step of the APM system of the metal etching machine, the PRS step is performed by the wet photoresist method to completely remove the photoresist on the wafer. This PRS step is usually Residual photoresist is removed using, for example, ACT690 solution and NMP (l-methyl-2-pyrrolidone) manufactured by Ashland Chemical Company, USA, where _ACT690 is used to remove residual photoresist, and NMP is used to neutralize ACT690. Do this After the Prs step, it is also necessary to use, for example, deionized water and nitrogen to clean the wafer. Recently, more and more semiconductor etching machines use Wafer Auto Cleaning (WAC) mode to perform etching to extend the preventiveness. Preventive maintenance (PM) cycle. So-called a wafer is cleaned in the main reaction chamber immediately after the main reaction chamber is etched to "make the main reaction pay to keep clean" and thus reduce Less particulate pollution and delay of PM time, which will improve wafer quality and reduce the time and money required for pM. However, when the etching machine adopts the WAC mode, the wafer must wait for the main reaction chamber to be cleaned before it can be cleaned. The rate of entering the main reaction chamber for the engraving process will be slowed down by increasing the waiting time. Therefore, when the money engraving machine uses the WAC mode, the rate of wafer processing per hour (Per Hour; WPH) will be higher than that without WAC. The mode is low. How to make up for the loss of WPH mentioned above has become a major issue. (Please read the precautions on the back before filling this page.) 装 • 4 The purpose and summary of the invention printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and the Consumer Cooperative: 502301 A7
五、發明說明（） -------------裝i I (請先閱讀背面之注意事項再填寫本頁) 雲於上述之發明背景中，蝕刻機台採用WAC模式時會 降低WPH。因此，本發明提供一個化學劑供給系統，使得 金屬蝕刻機台之APM系統的晶圓清洗步驟和後續之pRS 步驟可以臨場方式進行。 本發明的主要目的之一為提供一種化學劑供給系統’ 本發明之化學劑供給系統係在既有的金屬蝕刻機台之aPM 系統上安裝複數個化學劑循環裝置及排除選擇裝置，藉以 分別選擇喷 >麗多種化學劑於晶圓上，並回收且循環利用這些 化學劑。使得金屬蝕刻機台之ApM系統的晶圓清洗步驟和 後續之PRS步驟可以臨場方式進行，省去更換機台的時間， 因而可以增加製程的WPH，進而彌補因採用WAC模式而造成 之WPH損失。 ·線- 本發明的另一目的為提供一種化學劑供給系統，本發 明之化學劑供給系統係利用具有一旋轉裝置的金屬蝕刻機 台之APM系統，藉以進行PRS的步驟。由於旋轉裝置可以 增加去光阻液及其他化學劑的流動速率和分佈面積，因而 加強去光阻液的去光阻效果。 經濟部智慧財產局員工消費合作社印製 本發明的再一目的為提供一種化學劑供給系統，本發 明之化學劑供給系統可以分別喷灑多種化學劑、液體或氣 體於晶圓上，並回收且循環利用這些化學劑。不但可在同一 本紙張又度適用中國國家標準（CNS)A4規格（210 X 297公釐） 502301 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（) 系統上清洗晶圓及去除晶圓之光阻，並可因喷灑化學劑、 液體或氣體種類的不同而做各種彈性應用。 根據以上所述之目的，本發明提供了一種化學劑供給 系統’此化學劑供給系統係直接安裝於既有之金屬蝕刻機 台的APM系統’例如美國lam Research公司之TCP9600 機台。此化學劑供給系統至少包括複數個化學劑循環裝 置’以及-排除選擇裝置，其中這些化學劑循環裝置係藉 以喷灑和回收ACT690和NMp。因此，除原有ApM系統的 功能外，本發明之化學劑供給系統更可用以進行pRS的步 驟。 根據以上所述之目的，本發明提供了一種化學劑供給 系統’此化學劑供給系統至少包括：一機台座；一旋轉裝 置安裝於此機台座上*藉以吸附並旋轉晶圓；複數個氣體 喷灑裝置安裝於此機台座；複數個液體喷灑裝置安裝於此 機台座’藉以分別喷灑多種液體於晶圓上，其中這些液體 喷灑裝置有相對應之複數個液體排除裝置；複數個化學劑 循環裝置安裝於此機台座，藉以分別喷灑多種化學劑於此 晶圓上’並回收且循環利用這些化學劑；以及一排除選擇裝 置安裝於此機台座，其中此排除選擇裝置係藉以選擇欲排 除之化學劑或液體。因此，本發明之化學劑供給系統可依 據實際需要，選擇喷灑不同種類之化學劑、液體或氣體。 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） II1IIIII11H — --I I I I--^ ------1-----， (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 502301 A7 _B7_ 五、發明說明（） 圖式簡單說明： 本發明的較佳實施例將於往後之說明文字中辅以下列 圖形做更詳細的闡述，其中： 第1圖為繪示習知的金屬蝕刻機台之APM系統的結構 示意圖； 第2圖為繪示本發明之一較佳實施例之化學劑供給系 統的結構示意圖；以及 第3圖為繪示本發明之一較佳實施例之化學劑供給系 統的排除選擇裝置之收集板的俯視示意圖。 圖號對照說明： 10 液體喷灑裝置 20氣體喷灑裝置 30 旋轉裝置 30c 晶圓吸附裝置 30m 旋轉馬達 30s 傳動軸 50 化學劑喷灑元件 60 排除孔 80 晶圓 90 收集板 100 機台座 110 液體排除裝置 110d連接管件 110b 收集元件 210 、310 化學劑循環裝置 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --— — — — — — — — —— — —---— lit----------^ (請先閱讀背面之注意事項再填寫本頁) 502301 A7 B7 五、發明說明（： 210d 、 310d 210b > 310b 210t 、 3lOt 210p 、 3lOp 210f、3lOf 210h 發明詳細說明 連接管件 收集元件 貯存裝置 循環泵 過濾元件 溫度維持元件 經濟部智慧財產局員工消費合作社印製 本發明揭露一種化學劑供給系統。藉由分別喷灑多種 化學劑、液體或氣體於晶圓上，並回收且循環利用這些化學 劑，使金屬蝕刻機台之APM系統的晶圓清洗及後續之pRS 的步驟得以臨場方式進行。本發明之化學劑供給系統更可 擴充為可分別喷灑多種化學齊卜液體或氣體於晶圓上的系 統。 請參照第2圖，第2圖為繪示本發明之一較佳實施例 之化學劑供給系統的結構示意圖。本發明安裝化學劑循環 裝置21〇和化學劑循環裝置31〇、化學劑喷灑元件以 及排除選擇裝置（僅繪示其中之收集板9〇)於如第丨圖所示 之APM系統，藉以分別喷灑如AcT69〇和NMp ' I化學劑 於晶圓80上，並回收且循環利用這歧化學劑。 一匕干其中，此APM 系統至少包括：具有排除孔6〇之機台座丨 ，疑轉裝置 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） ----- ---------裝--------訂-----------r (請先閱讀背面之注意事項再填寫本頁)V. Description of the invention () ------------- Install i I (Please read the notes on the back before filling this page) In the above background of the invention, when the etching machine adopts the WAC mode Will reduce WPH. Therefore, the present invention provides a chemical agent supply system, so that the wafer cleaning step and subsequent pRS step of the APM system of the metal etching machine can be performed on-site. One of the main objects of the present invention is to provide a chemical agent supply system. The chemical agent supply system of the present invention is to install a plurality of chemical agent circulation devices and exclusion selection devices on an aPM system of an existing metal etching machine, so as to individually select Spray > a variety of chemicals on the wafer, and recover and recycle these chemicals. The wafer cleaning steps and subsequent PRS steps of the metal etching machine's ApM system can be performed on-site, eliminating the need to change the machine time, so the WPH of the process can be increased, and the WPH loss caused by the WAC mode can be compensated. -Line-Another object of the present invention is to provide a chemical agent supply system. The chemical agent supply system of the present invention uses an APM system of a metal etching machine having a rotating device to perform the PRS step. Since the rotating device can increase the flow rate and distribution area of the photoresist removing liquid and other chemical agents, the photoresist removing effect of the photoresist removing liquid is enhanced. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Another object of the present invention is to provide a chemical agent supply system. The chemical agent supply system of the present invention can respectively spray a plurality of chemical agents, liquids or gases on a wafer, and recover and Recycle these chemicals. Not only can the Chinese National Standard (CNS) A4 specification (210 X 297 mm) be applied on the same paper. 502301 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention The photoresist of the wafer can be used for various elastic applications due to the spraying of chemical agents, liquids or gases. According to the above-mentioned object, the present invention provides a chemical agent supply system 'This chemical agent supply system is an APM system directly installed on an existing metal etching machine', such as a TCP9600 machine of lam research company in the United States. This chemical agent supply system includes at least a plurality of chemical agent circulation devices' and -exclusion selection devices, wherein these chemical agent circulation devices are used to spray and recover ACT690 and NMp. Therefore, in addition to the functions of the original ApM system, the chemical agent supply system of the present invention can be used to perform the steps of pRS. According to the above-mentioned object, the present invention provides a chemical agent supply system. The chemical agent supply system includes at least: a machine base; a rotating device is installed on the machine base * to adsorb and rotate the wafer; and a plurality of gas sprays. The spraying device is installed on this machine base; a plurality of liquid spraying devices are installed on this machine base 'so as to spray a plurality of liquids on the wafer respectively, wherein these liquid spraying devices have corresponding liquid ejection devices; The agent circulation device is installed on the machine base, so that various chemical agents are sprayed on the wafer separately, and these chemical agents are recovered and recycled; and an exclusion selection device is installed on the machine base, where the exclusion selection device is used to select Chemicals or liquids to be excluded. Therefore, the chemical agent supply system of the present invention can choose to spray different types of chemical agents, liquids or gases according to actual needs. 6 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) II1IIIII11H — --III I-^ ------ 1 -----, (Please read the precautions on the back first (Fill in this page again) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 502301 A7 _B7_ V. Description of the invention () Schematic description: The preferred embodiment of the present invention will be supplemented by the following figures in the following explanatory text Detailed explanation, in which: FIG. 1 is a schematic diagram showing a structure of a conventional metal etching machine APM system; FIG. 2 is a schematic diagram showing a structure of a chemical agent supply system according to a preferred embodiment of the present invention; and FIG. 3 is a schematic plan view illustrating a collection plate of an exclusion selection device of a chemical agent supply system according to a preferred embodiment of the present invention. Description of drawing numbers: 10 Liquid spraying device 20 Gas spraying device 30 Rotating device 30c Wafer adsorption device 30m Rotating motor 30s Transmission shaft 50 Chemical agent spraying element 60 Exclusion hole 80 Wafer 90 Collection plate 100 Machine base 110 Liquid removal The device 110d is connected to the pipe fittings 110b, and the collection elements 210 and 310 are used for the chemical agent circulation device. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -------------- — Lit ---------- ^ (Please read the notes on the back before filling out this page) 502301 A7 B7 V. Description of the invention (: 210d, 310d 210b > 310b 210t, 3lOt 210p, 3lOp 210f, 3lOf 210h Detailed description of the invention Detailed description of the connecting pipe collection element storage device Circulating pump filter element Temperature maintenance element Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The present invention discloses a chemical agent supply system. On the wafer, these chemicals are recovered and recycled to make the wafer cleaning and subsequent pRS steps of the APM system of the metal etching machine. This step can be performed on-site. The chemical agent supply system of the present invention can be further expanded into a system that can spray multiple chemical liquids or gases on the wafer respectively. Please refer to FIG. 2, which is a diagram illustrating the present invention. A structural schematic diagram of a chemical agent supply system of a preferred embodiment. The present invention installs a chemical agent circulation device 21o and a chemical agent circulation device 31o, a chemical agent spraying element, and an exclusion selection device (only the collection plate 9 is shown therein). ) In the APM system as shown in Figure 丨, spray chemical agents such as AcT69 and NMp 'I on the wafer 80, and recover and recycle the chemicals. One of them, the APM system is at least Including: machine base with exclusion hole 60, suspected transfer device This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 meals) ----- --------- pack- ------- Order ----------- r (Please read the notes on the back before filling this page)
502301 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 30安裝於機台座100,此旋轉裝置3〇更至少包括旋轉馬 達30m、晶圓吸附裝置30c以及傳動軸3〇s，其中旋轉馬 達3 0m的最大轉速為例如約3〇〇〇每分鐘每轉（rpnl);氣 體喷灑裝置20安裝於機台座100;以及液體喷灑裝置10 安裝於機台座1 00，其_此液體噴灑裝置1 〇有一相對應 之液體排除裝置110,此液體排除裝置110至少包括收集 元件110b和連接管件ii〇d’其中此收集元件n〇b可係 例如漏斗型，而連接管件Π 0d係將液體由機台座丨〇〇之 排除孔6 0經收集元件1 1 0 b排除。本發明並將原直接安裝於 機台座100之收集元件110b改為安裝至收集板9〇,且為使 收集板90連接收集元件110b之後易於轉動，連接管件 110d係使用軟性材料，例如PFA氟樹脂。本發明之化學 劑循環裝置210至少包括：收集元件2i〇b、循環泵21〇ρ、 貯存裝置210t、過濾元件210f以及連接管件21〇d。而本 發明之化學劑循環裝置3 1 0至少包括：收集元件3丨〇b、循 環泵310p、貯存裝置310t、過濾、元件31〇f以及連接管件 3 1 0d。由於化學劑循環裝置2 1 0和化學劑循環裝置3丨〇的 結構大致相同’兹僅以化學劑循環裝置2 1 〇來做說明：收 集元件210b係連結於排除選擇裝置之收集板9〇，收集元 件2 1 Ob可為例如漏斗型。連接管件2 1 0d係藉以串連收集 元件210b、貯存裝置210t、循環泵210p和過濾元件21〇f 至化學劑喷灑元件50，其中，為使排除選擇裝置之收集板 90連接收集元件210b之後易於轉動，連接收集元件21〇b 本紙張尺度適用中國國豕k準（CNS)A4規格（210 X 297公餐） — I1IIIIIIIII1 · I I I I 1 I I ^ . I--I I I I I I L. <請先閱讀背面之注意事項再填寫本頁)502301 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (30) Installed on the machine base 100, this rotating device 30 includes at least a rotating motor 30m, a wafer adsorption device 30c and a transmission shaft 30s. The maximum rotation speed of the rotary motor 30m is, for example, about 3000 per revolution per minute (rpnl); the gas spraying device 20 is installed on the machine base 100; and the liquid spraying device 10 is installed on the machine base 100. The liquid spraying device 10 has a corresponding liquid draining device 110. The liquid draining device 110 includes at least a collecting element 110b and a connection pipe iid. The collection element nob may be, for example, a funnel type, and the connection pipe Π 0d is The liquid is removed from the removal hole 60 of the machine base 〇〇〇 through the collection element 1 1 0 b. The present invention changes the collection element 110b directly installed on the machine base 100 to the collection plate 90, and in order to make the collection plate 90 easy to rotate after connecting the collection element 110b, the connecting pipe 110d is made of a soft material, such as PFA fluorine resin . The chemical agent circulation device 210 of the present invention includes at least: a collection element 2i0b, a circulation pump 21oρ, a storage device 210t, a filter element 210f, and a connection pipe 21od. The chemical agent circulation device 3 1 0 of the present invention includes at least: a collection element 3b, a circulation pump 310p, a storage device 310t, a filter, a component 310f, and a connection pipe 3 1 0d. Since the chemical agent circulating device 2 10 and the chemical agent circulating device 3 丨 are approximately the same in structure, the chemical agent circulating device 2 1 0 will be used for explanation only: the collecting element 210b is connected to the collecting plate 90 which excludes the selection device, The collecting element 2 1 Ob may be, for example, a funnel type. The connecting pipe 2 1 0d connects the collecting element 210b, the storage device 210t, the circulation pump 210p, and the filtering element 21f to the chemical spraying element 50 in series. In order to exclude the collecting plate 90 of the selection device from being connected to the collecting element 210b, Easy to rotate and connect to the collection element 21〇b This paper size is suitable for China National Standard (CNS) A4 (210 X 297 meals) — I1IIIIIIIII1 · IIII 1 II ^. I--IIIIII L. < Please read the back first (Notes for filling in this page)
A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（） 與貯存裝/ 210t間的連接管件21〇“系使用軟性材料，例 如PFA氟樹脂。依實際需要，貯存裝置2i〇t更可具有溫度 、一牛2l〇h例如熱父換器（jjeat Exchanger)或加熱器 (Heater)等。舉例而言，化學劑循環裝置2丨〇係藉以噴灑並 回收且循環ACT690,因AC丁690的溫度必需維持在165艺 才能發揮功效，故貯存裝置21〇t内需安裝溫度維持元件 210h ’藉以維持ACT690的溫度。 另外，如第3圖所示，第3圖為繪示本發明之一較佳 實施例之化學劑供給系統的排除選擇裝置之收集板的俯視 不意圖。排除選擇裝置至少包括一具有3個孔（分別與收集 兀件11 Ob、收集元件2 1 〇b和收集元件3丨0b吻合）的收集 板90和轉動裝置（未繪示），轉動裝置係用以轉動收集板 90之預設孔（即收集元件i 1〇b、收集元件21〇b以及收集元 件3 10b中擇其一）至機台座1〇〇之排除孔6〇，並與排除孔 60相接合。排除選擇裝置的收集板9〇之一端連接於機台 座100 ’另一端則分別與液體排除裝置1 1 0之收集元件 1 1 〇b、化學劑循環裝置2 1 〇之收集元件2 1 Ob以及化學劑 循環裝置3 1 0之收集元件3丨〇b連接，藉以選擇欲排除之液 體（使收集元件1 l〇b對準排除孔60)或化學劑（使收集元件 210b或3 10b對準排除孔60)。其中，氣體如氮氣無須特別排 除，液體如去離子水只被排除而不被回收，而其他被排除的 化學劑如ACT690和NMP則被回收循環使用。本發明之化 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公餐） ----- I I I I 1 — t *!1 ---- ! ·線 (請先閱讀背面之注意事項再填寫本頁) 502301 A7 B7 五、發明說明（） 學劑供給系統更至少包括一控制裝置（未繪示），藉以控制 排除選擇裝置之收集板90的位置、循環泵21〇p或循環泵 3 10P的開關、旋轉裝置30之旋轉馬達3〇m的開關以及氣 體、液體和化學劑流量的控制等。因此，清洗晶圓和去 除光阻的步驟可自動完成’例如：先起動旋轉馬達3〇m至最 大轉速，例如約3000rpm。再轉動收集板9〇至ACT690的 收集元件，例如收集元件21 Ob對齊排除孔60 ,再起動 A C T 6 9 0的循環泵，例如循環泵2 1 0p，使ACT690以例如約4 每分鐘每公升（Ι/m)至約5 Ι/m的流速喷灑。喷灑完後，關掉 A C T 6 9 0的循環粟’例如循環泵2 1 0 p。重複前述轉動收集 板90以及開關NMP的循環泵3 1 Op，使NMP以例如約4 1/m 至約5 1/m的流速喷灑。喷灑去離子水只需先轉動收集板9〇 至去離子水的收集元件，例如收集元件1 1 〇b，對齊排除孔 6 0之後，即可喷灑去離子水。至於喷灑氮氣，因無須回收或排 除，故可直接喷灑。 以上所述僅為本發明之一較佳實施例的說明，本發明 更可依實際需要而做調整，而非只能應用於前述之金屬蝕刻 機台之APM系統。本發明可依實際需要來安裝複數個化 學劑循環裝置、氣體喷灑裝置、液體喷灑裝置和與這些液 體喷灑裝置相對應的液體排除裝置，並依照液體排除裝置 化學劑循環裝置的數目總合來設計收集板上的孔之數目 及這些孔的分佈位置α 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) I ·1111(11 « — — — — — I L.A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () and the storage tube / 210t connection pipe 21〇 "is made of soft materials, such as PFA fluororesin. According to actual needs, storage device 2i〇t more It may have a temperature of 210h, such as a heat exchanger (Jjeat Exchanger) or a heater (Heater), etc. For example, the chemical agent circulation device 2 is used to spray and recover and recycle ACT690, because AC 690 The temperature must be maintained at 165 ° C in order to be effective. Therefore, a temperature maintenance element 210h 'needs to be installed in the storage device 21t to maintain the temperature of ACT690. In addition, as shown in FIG. 3, FIG. The top view of the collection plate of the exclusion selection device of the chemical agent supply system of the preferred embodiment is not intended. The exclusion selection device includes at least one having 3 holes (respectively with the collection element 11 Ob, the collection element 2 1 0b, and the collection element 3 丨0b coincides) the collecting plate 90 and a rotating device (not shown). The rotating device is used to rotate the preset holes of the collecting plate 90 (ie, the collecting element i 1〇b, the collecting element 21 0b, and the collecting element 3 10b). (Choose one of them) to the exclusion hole 60 of the machine base 100, and is connected to the exclusion hole 60. One end of the collecting plate 90 of the exclusion selection device is connected to the machine base 100, and the other end is respectively connected to the liquid removal device 1 1 The collection element 1 1 0b of 0, the collection element 2 1 Ob of the chemical agent circulation device 2 1 Ob, and the collection element 3 3b of the chemical agent circulation device 3 1 0 are connected to select the liquid to be excluded (make the collection element 1 l0b is aligned with the exclusion hole 60) or chemical agent (aligns the collecting element 210b or 3 10b with the exclusion hole 60). Among them, gas such as nitrogen does not need to be specifically excluded, and liquid such as deionized water is only excluded without being recovered, and Other excluded chemicals, such as ACT690 and NMP, are recovered and recycled. The paper size of the present invention is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 meals) ----- IIII 1 — t *! 1 ----! · Line (Please read the precautions on the back before filling this page) 502301 A7 B7 V. Description of the invention () The chemical agent supply system includes at least one control device (not shown) to control the exclusion options The position of the collection plate 90 of the device, the circulation pump 21〇p The switch of the circulation pump 3 10P, the switch of the rotation motor 30m of the rotary device 30, and the control of the flow of gas, liquid and chemical agents, etc. Therefore, the steps of cleaning the wafer and removing the photoresist can be automatically completed. Motor 30m to the maximum speed, such as about 3000rpm. Then rotate the collection element 90 to ACT690, such as the collection element 21 Ob aligned with the exclusion hole 60, and then start the circulation pump ACT 6 9 0, such as the circulation pump 2 1 0p ACT690 is sprayed at a flow rate of, for example, about 4 per minute per liter (1 / m) to about 5 1 / m. After spraying, the circulation pump A C 690 is turned off, such as the circulation pump 2 1 0 p. The aforementioned rotation of the collecting plate 90 and the circulation pump 3 1 Op of the NMP are repeated so that the NMP is sprayed at a flow rate of, for example, about 4 1 / m to about 5 1 / m. To spray deionized water, simply rotate the collection plate 90 to the deionized water collection element, for example, the collection element 1 10b, align the exclusion hole 60, and then spray the deionized water. As for spraying nitrogen, it can be sprayed directly because it does not need to be recovered or discharged. The above description is only a description of a preferred embodiment of the present invention. The present invention can be adjusted according to actual needs, instead of being applied to the aforementioned APM system of a metal etching machine. According to the present invention, a plurality of chemical agent circulation devices, gas spray devices, liquid spray devices, and liquid discharge devices corresponding to these liquid spray devices can be installed according to actual needs, and the total number of chemical agent circulation devices of the liquid discharge device can be installed according to the actual needs. The number of holes and the distribution positions of the holes on the collection design board. The paper size is applicable to Chinese National Standard (CNS) A4 (21 × 297 mm) (Please read the precautions on the back before filling this page) I · 1111 (11 «— — — — — I L.
經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 502301 A7 ___ B7 五、發明說明（） 綜合以上所述，本發明之一優點為提供一種化學劑供 給系統，本發明之化學劑供給系統係在既有的金屬蝕刻機 台之APM系統上安裝複數個化學劑循環裝置及一排除選 擇裝置，使得金屬蝕刻機台之ApM系統的晶圓清洗步驟和 後續之PRS的步驟可以臨場方式進行，省去更換機台的時 間。因此，可以增加製程的WPH ,進而彌補因採用WAc模式 而造成之WPH損失。 本發明的另一優點為提供一種化學劑供給系統，本發 明之化學劑供給系統係利用具有一旋轉裝置的金屬蝕刻機 台之APM系統，藉以進行prS的步驟，因而加強去光阻液 的去光阻效果。 本發明的再一優點為提供一種化學劑供給系統，本發 明之化學劑供給系統可以分別喷灑多種化學劑、液體或氣 體於晶圓上，並回收且循環利用這些化學劑。可依嘴灑各種 化學劑、液體或氣體的實際需要，而做彈性應用與設計。 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍内。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed by 502301 A7 ___ B7 V. Description of the invention () In summary, one of the advantages of the present invention is to provide a chemical agent supply system. The present invention The chemical agent supply system is to install a plurality of chemical agent circulation devices and an exclusion selection device on the existing APM system of the metal etching machine, so that the wafer cleaning step of the ApM system of the metal etching machine and the subsequent PRS step Can be performed on-site, eliminating the need to change the machine time. Therefore, the WPH of the process can be increased to compensate for the WPH loss caused by the use of the WAc mode. Another advantage of the present invention is to provide a chemical agent supply system. The chemical agent supply system of the present invention uses an APM system with a metal etching machine having a rotating device to perform the prS step, thereby enhancing the removal of the photoresist solution. Photoresistance effect. Still another advantage of the present invention is to provide a chemical agent supply system. The chemical agent supply system of the present invention can respectively spray a plurality of chemicals, liquids or gases on a wafer, and recover and recycle these chemicals. It can be used for elastic application and design according to the actual needs of spraying various chemicals, liquids or gases. As will be understood by those familiar with this technology, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention, etc. Effective changes or modifications should be included in the scope of patent application described below. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page).