TW501182B - Method and apparatus of repairing photoresist pattern - Google Patents

Abstract

This invention provides a method and an apparatus of repairing photoresist pattern. The inventive method of photoresist pattern repair aims to be used for repairing mask pattern by using radiation spot for an additional exposure process on the photoresist to repair the photoresist pattern on a wafer so that difficulties, such as phase defects on a phase shift mask (PSM) which can not be precisely repaired, resulting from directly performing repair on the mask is avoided. On the other hand, the inventive apparatus of repairing photoresist pattern jointly places the pattern duplication device and the pattern repair device in the same reaction chamber. When the first wafer is being exposed, the pattern repair can be carried out on another wafer. Therefore, time wasted on reaction chamber transfer can be reduced and production capacity can be increased.

Description

501182

V. Description of the invention (Field of the invention: The present invention relates to a photoresist pattern: :::::: a method for pattern repair on a photoresist developed by t Equipment. / Repau Background: In the semiconductor manufacturing process, the photomask is generally composed of a transparent substrate, transparent or opaque, including transparent glass, glass, etc. Opaque film made of aluminum and its thickness is about 1 000 A. In addition Masks) In addition to the opaque film, the light phase device at the edge of the film, such as the transparent layer and the etched absorbent material on the substrate to replace all A small part of the opaque light transmission. A widely used element. The material with a patterned light-absorbing substrate can be, for example, chrome, nickel, 'phase shift mask (Phase Shifti also includes useful In order to change the edge area of the opaque film on the opaque substrate, the phase shift mask is also made of this material. This absorbent material can be printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs.

(Please read the precautions on the back before filling out this page) Equipment · 501182 V. Description of the invention () The required pattern is then transferred to the opaque film by etching the 忒 m pattern, and the transparent area and opaque area are formed on the first cover. However, in the manufacturing process of the photomask, it is necessary to form a non-defective photomask. Therefore, when copying the pattern into the clothing, you need to repair the photomask first. Photomask The above defects can be divided into transparent defects, supplemented by Zhuo Youque or opaque defects. Among them, the transparent defects are in the defect area, the original beam Yongshi, 1 has an opaque film but actually / exists, and the opaque defects are in, Make up for the 1G snail ^ There should be no opaque > Y film on the domain but it actually has. Tian τ. In the second order intensity mask (Binary, the first mask is repaired with Pinhde defects and the opacity defects are removed. Etc.) Song 1 Please refer to FIG. 1A ', which is shown as a mask view that is known to have defects. The mask 100 is mainly composed of the opaque & It is composed of transparent and transparent areas 110. However, pinhole defects 106 are formed on the opaque area 104, and opaque defects 上 η are formed on the transparent area 110. Please refer to FIG. 1B, which is shown in FIG. For the green photomask 100 along the I-I section on the 'A' view Sectional view, from 1B ''. Opaque defect 1. 8.… see pinhole defect 106 and please refer to Figure 2A, repair the mask on Guangcui 100, remove the opaque defect in the 114 area The opaque defects 108 in θ, ^ have been removed, and the 卞 钆 补 t-complement region 112 is formed on the opaque region 104. The paper size is applicable to the Chinese National Standard (CNS) A4 specification. Public love J. (Please read first Note on the back, please fill in this page again.) ·· Φ Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 501182 A7 B7 V. Description of the invention () Defect 1M. Please refer to Figure 2B, which is shown along Figure 2A The cross-sectional view of the mask 100 of the Π-Π section line in the figure. From FIG. 2B, the pinhole repair area 1 1 2 can be seen to cover a part of the opaque area 丨 〇4 and the entire pinhole defect 1 0 6 'and opaque. Defect 108 has been removed, and the defect on the mask 丨 〇〇 has been repaired. However, the repair of the 'phase shift mask and Extreme UlUaviolet (EUV) mask will cause some problems. Please refer to Figure 3 A , Which is shown as a top view of a phase shift mask with defects In addition to the intensity defects on this photomask 200, there are phase defects 208 to be repaired. Among them, the intensity defects include, for example, pinhole defects 204 in the opaque area 202 and opaque defects 2 0 in the transparent area 2 1 0. 6. With reference to Figure 3b, its edge is shown as a cross-sectional view of the mask 200 along the plate-plate section line on Figure A:> A, pinhole defects can be seen from Figure 3b 204. An opaque defect 206 and a phase defect 208. Therefore, it is difficult to accurately add or remove phase = material in depth or reflectance, and restore the phase relationship required for the mask 200. (Please read the notes on the back before filling out this page)

2-T Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In addition, defect repair on the extreme ultraviolet mask may be more difficult. Referring to FIG. 4A ', pinhole defects are formed on the photomask 250, 54 are located in the opaque area 252, and reflection defects 256 and 258 are located in the transparent area 260. The cross section of the light sheet 250 obtained from the second line along the dotted line in Fig. 4A is shown in Fig. 4B. Since the photomask 25 is reflective, it is necessary to cover several layers of dry paper on the transparent line 260 of the photomask 250. The size of the paper is applicable to China National Standard (CNS) A4 (210X297 mm)% 501182 A7 B7 ---- ---— * --------- 5. Description of the invention () (Please read the precautions on the back before filling in this page) Disturbed film material to prevent the reflection of the photomask 250. The multi-layer interference film is then covered with an absorbing layer, wherein the absorbing layer can be selectively removed according to a desired pattern. However, the defects in the multilayer reflective area are relatively difficult to repair, and the thickness specifications for all layers have not yet been achieved. Please refer to Figure 5 for a schematic diagram of the equipment in a conventional extreme ultraviolet system. This extreme ultraviolet system 3 00 includes a source vacuum reaction chamber 3 02 and a main vacuum reaction chamber 318. Laser light 304 strikes a rotating mirror 306 and enters a segmented collector 308 of the source vacuum reaction chamber 302 for collection. About 30% of the visible extreme ultraviolet rays are generated, and the gas generator 3 10 generates a gas plasma to emit the illumination required in the extreme ultraviolet lithography process. Then, it directly enters Pupil Optics 312 and then directs it to the imaging mirror 3 1 4 and guides the filter 3 1 6. The filter 3 1 6 only allows extreme ultraviolet rays with a desired wavelength to pass through. Then the light beam enters the main vacuum reaction chamber 318, and the light beam is guided to the mask 320 by the broadcasting optical device 324, and the required pattern is reflected into the extreme ultraviolet imaging optical device 322. Through the vacuum window 326, the required image is copied on the wafer 328. After the pattern is copied by this extreme ultraviolet system 300, it is usually necessary to change the abutment for the mask repair step. The repairs printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs cover the phase shift of the outer purple pole and the shade of the light: A summary of the study and the above-mentioned Yu Jianming issued the paper standard applicable to the Chinese National Standard (CNS) A4 specification ( 210X297 mm)

Fifth, the invention says that the problem of ^-', so the present invention does not directly perform repair operations on the photomask, but directly provides the use of private /. For the gray radiation point (Radlation Sp0t) for additional exposure to the photoresist Patch the photoresist pattern on the wafer to avoid the difficulties of repairing the fixture = bow I hair directly on the mask. On the other hand, the general extreme ultraviolet system only has the function of room pattern copying '. After the pattern copying, the reaction must be switched before the mask repair can be continued, so it will increase the process time and increase the process cost. 1. One of the main objects of the present invention is to provide a repair method for the photoresist pattern. The method of the present invention does not directly repair the defective photomask, but the photoresist formed on the wafer by 2 radiation spots. Pattern repair is performed to reduce the difficulty of repairing mask pattern defects. Another object of the present invention is to provide a photoresist pattern repairing device. The device of the present invention combines a photomask copying device and a photoresist repairing device in the same reaction chamber, and can perform photomask copying on a first wafer. At the same time, the repair of the photoresist pattern of the second wafer can not only save the time spent in converting the machine, but also improve the process efficiency and increase the production capacity. (Please read the precautions on the back before filling in this page.) Installation, τ ¾ Photographs of the phase-shifting photograms printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, the photoresistance of the photoresistance of the photoresistance points Repairing a pair of low-supplied connections is not straightforward, and the replacement method is explained. The 6th party's supplementary case 6 is revised. The light and light line is provided with an external component that is repaired with a purple root or square cover according to the law. The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 501182 A7 B7 V. Description of the invention (The room is to be prepared in the same way as in the Minghe Hairpin. The installation of the case to repair the difficult and difficult cases, the picture trapping the lack of light case, and the picture installation cover, the light line complex outer case, the picture pole cover Or the light internal process room system should be highly reflective but can not be the same. At this time, due to the system's "repair case repair pattern masks, the photoresist can advance the light." The time spent when entering the room to change the round crystal will save the energy saving f 率 rate energy efficiency production statement of a single diagram, supplemented by the Chinese civilization, and then go to: The detailed and detailed explanations are more detailed in the shape of the drawing; the view of the line drawing is I. The cover I is trapped in the middle of the light. There is a lack of light in the cover. Figure AB Chapter No.:……………1 Pack: (Please read the precautions on the back first Complete this page) shows a schematic view of a first plotted as shown in FIG FIG Clauses A B 2 2

Figure A of the Warp Mask

Π A side of the figure along the middle cover; the top line of the cross-section view after the top Π supplement · repair ¾ printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

In the line drawing, in the cross section of the cover, the light of the cover is shifted, the light of the phase cover is trapped, the phase is absent, and the phase is absent. 45 A with a drawing D A Head 3 The display is shown as the drawing A B

The visible shade of the purple poles is visible as shown in Figure A. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 501182 A7 B7 V. Description of the invention () Figure 4B is Figure 4A is a cross-sectional view taken along the IV-IV section of the extreme ultraviolet reticle in Figure 4A; Figure 5 is a schematic diagram of the equipment in a conventional extreme ultraviolet system; Figure 6 is a preferred view of the present invention A schematic diagram of a device combining a photomask pattern copying device and a photoresist pattern repairing device according to the embodiment; and FIG. 7 is a diagram illustrating a scanner or a scanner having a photoresist pattern repairing system according to a preferred embodiment of the present invention. Schematic diagram of the stepper. (Please read the precautions on the back before filling out this page.) Contrast with the drawing number printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, saying 'Ming: 100 photomask 102 opaque area 104 opaque area 106 pinhole defect 108 opaque defect 1 10 Transparent area 1 12 Pinhole repair area 114 Opaque defect removal area 200 Phase shift mask 202 Opaque area 204 Pinhole defect 206 Opaque defect 208 Phase defect 210 Transparent domain 250 EUV mask 252 Opaque domain 254 Pinhole defect 256 Reflection Defect 258 Reflection defect 260 Transparent area 300 Extreme ultraviolet system 302 Source vacuum reaction chamber 304 Laser light 306 Rotating mirror 308 Bow-shaped collector 3 10 Gas generator, \ 'ά This paper standard applies to China National Standard (CNS) A4 specification (210X297) (%) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

Description of the invention (Detailed description of the invention) Clear hole optical instrument filter mask relay optical instrument wafer source vacuum reaction chamber rotating mirror body generator imaging mirror main vacuum reaction chamber extreme ultraviolet imaging light relay optical instrument first wafer second crystal Circular illuminator lens repair illuminator repair lens imaging mirror main vacuum reaction chamber extreme ultraviolet imaging optical instrument vacuum window replication and repair system laser bow collector collector pupil optical instrument filter mask vacuum window electron beam imaging bar scanner / stepper The first wafer size control aperture of the photoresist mask and the second wafer can be known from the above-mentioned knowledge. It is difficult to directly repair the 7-phase and the first mask and the extreme ultraviolet light. Not directly to the light ^ This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. In addition to the reflection residues, the lower mask pattern is transferred for inspection. This information can be used without seeping through the residues. It will lead to residual phase absorption. Therefore, in general, film stacking is not allowed. In the description of the invention (repairing, but repairing the defect of the photoresist image copied on the wafer. On the one hand, the invention will The pattern copying device is in the same reaction chamber as the pattern repairing device 3 to increase the output and save the process time. Therefore, the present invention provides an instrument to copy the photomask pattern and save $ 4 to 30% of the subsequent wafer cost. The photoresist is repaired in accordance with JLatent Image). After moving to the substrate and then performing the etching step, it is usually to confirm the position, form and size of the defect, and to fill in the absorption defect on all missing absorptive defects. It will be removed, for example, from a quartz substrate and 'in a phase-shift mask, removing opaque defect removal damage. Similarly, in an extreme ultraviolet mask, the underlying film stack is not lowered during the process The defects of the lower layer of the film stack, like the absorptive avoidance, will cause a low exposure phenomenon at the defects, but the defects cannot be removed on the photomask. Therefore, the present invention provides a The method of repairing the photoresist image replaces the conventional method of repairing directly on the photomask. The body's pattern can be imaged on the photoresist, and the defects on the photomask can be copied on the photoresist, whether it is light The missing part or the photoresist added part. 4 Before the photoresist is developed, these defects will exist as exposed or unexposed hidden images, and these undeveloped photoresist hidden images can be exposed to radiation again, μ 10 exposure (please read the precautions on the back before filling this page)

V. Description of the invention (A7 B7 ^ image or I unexposed image m II to repair the lack of photoresist pattern 11. The purpose of the mask pattern defect 0 '^ When pattern repair is performed on the undeveloped photoresist of the wafer,可-惠 + rll "Xing Chang, one point of exposure on the remaining defects, where the radiation, Martin θ" "accounted by the light beam": spotlight tools and focusing tools, and the light source may be " ,, (Lamp), laser, ultraviolet, electron beam, ion beam, light generator, for the general pattern exposure can use a single light source, X = better is to use a separate light source. Therefore, the electron beam light source can be used to Repair = Ultraviolet defect. In addition, the irradiation range is preferably slightly larger than the defect. Tolerance of the focusing spotlight, for example, about 193nm is used to repair replication defects above 3.4nm. {Please read the precautions on the back first Fill in this page again.} Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. In addition, please refer to FIG. 6, which depicts a combination of a mask pattern copying device and light according to a preferred embodiment of the present invention. Schematic diagram of the design of the pattern repair device 2. The replication and repair system 400 mainly includes a source vacuum reaction chamber 402 and a main vacuum reaction chamber 418. The main vacuum reaction chamber 418 includes two parts: a mask pattern reproduction and a mask pattern repair. First, The laser light 404 hits the rotating mirror 406 and enters the arc-shaped collector 40 8 of the source vacuum reaction chamber 4 0 2 to collect about 30% of the visible extreme ultraviolet rays. The gas generator 4 generates gas plasma to emit the polar The required illumination in the UV lithography process. Then, it directly enters the pupil optical device 4 1 2 and then directs it toward the imaging mirror 4 丨 4 to guide the filter 416, where the chirped light mirror 416 allows only the required wavelength, for example, about 0. "Micron to this paper size is applicable to China National Standard (CNS) A4 specification (210X297 public love), 501182 A7B7 V. Description of the invention (approximately 450 microns, extreme ultraviolet rays pass. Then, the beam enters the main vacuum reaction chamber 418, by The relay optical instrument 424 guides the light beam to the mask 42 and reflects the desired pattern into the extreme ultraviolet imaging optical instrument 422. In the extreme ultraviolet imaging optical instrument 422, the image size is reduced and then transmitted. The required image is copied on the first wafer 428 through the vacuum window 426. In order to maintain high positioning accuracy, the wafer is preferably fixed on the original chuck for photoresist pattern repair after exposure without re- Fix it on another chuck before repairing. Then move the wafer to the repairing area, that is, the electron beam imaging bar 430, and expose it with a radiant light spot. The electron beam imaging bar 430 is preferably a shaped light bar that can be used at any time. Adjust the shape according to the size of the defect, but the Gaussian_Beam column can also meet the requirements. Since most AHgners that provide normal pattern exposure are already equipped with laser interferometers to monitor The position of the wafer chuck is therefore relatively easy to position the wafer under the spot of radiated light. Please read the notes on the back before completing this page

Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, X.f. Co., Ltd. When the pattern is copied on the first wafer 42 8 by the system 400, the electron beam imaging block 430 can be used to repair the photoresist pattern on the second wafer 432 at the same time. And the repair operation is preferably combined with the operation of another wafer chuck, such as calculating the local flatness of the wafer and the position of the alignment mark, so the process operation time can be reduced to increase the yield. According to a preferred embodiment of the present invention, the extreme-ultraviolet pattern exposure device 12 has a paper size that conforms to China National Standard (CNS) A4 (210x297).

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 501182 V. Description of the invention (Y electron beam spotlight repair device is a better combination, because the wafer can be operated in two rounds under vacuum. Therefore, using the device of the present invention, Pattern exposure and repair can be carried out under Shinji, thereby increasing wafer yield. ° Monthly, Figure 7, which shows a scanner with a photoresist repair system, which is a preferred embodiment of the present invention. Schematic diagram of the device or stepper. Scanning benefit / stepping is 450. It has general imaging optics and photoresist pattern repairing device. 'It has a illuminator (murninator) 452 above the imaging optics to generate light to the photomask 454. Image, after this image enters the lens, the size of the image is reduced, and then this image is copied on the first wafer 458, where the pattern is copied. In addition, the photoresist pattern repair device is repaired by the illuminator 460, the size control aperture 462, And a repair lens 464, wherein the size control aperture 462 is located on a plane combined with the plane of the second wafer 466 through the repair lens 464. The size control aperture 462 borrows The size can be adjusted by the size of the repaired photo of the movable blade controlled by 1460. And a single light source can be divided into two parts for general imaging optics and photoresist pattern repairing device, two of which can be used alternately. The wavelengths are selected according to the individual needs of the lens 456 and the repair lens 464. For example, light sources with different energies can be used to repair the spotlight at the same time, not just for exposure. Therefore, the electron beam repair barrier can obviously be used in combination with the optical imaging barrier. Ground, optical repair bar can also be used in combination with extreme ultraviolet imaging lens and / or electron beam imaging bar. 13 This paper size is applicable to the national standard (CNS) A4 specification (210X 297 mm) (Please read the precautions on the back first) (Fill in this page again)

5011 ^

V. Description of the invention (The present invention is prepared to reduce the repair of the incident light spot of the present defect. The photomask should be copied indoors and indoors at the same time, so the circle conversion machine is good. In order to provide a photoresist pattern repair method and This method does not directly repair the photoresist with a shift mask or extreme ultraviolet light when repairing the photoresist pattern. Instead, it uses the photoresist image formed on the radiation: a to perform the pattern. Repairing can therefore: the difficulty of mask pattern defects. In addition, the device of the present invention is combined with the photoresist pattern repairing device in the same way, when the mask pattern is copied on the first wafer, the same The photoresist pattern of the second wafer is repaired in response to the completion of the drawing on the wafer, and the subsequent repair steps can be performed without changing the wafer chuck. The use of the present invention can not only improve the process efficiency, but also save The time it takes for the crystal table to further increase the production capacity. As those skilled in the art know, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of patent application of the present invention. Other equivalent changes or modifications made without departing from the spirit disclosed in the present invention shall be included in the scope of patent application below. (Please read the precautions on the back before filling this page) Employees ’Intellectual Property Bureau of the Ministry of Economic Affairs Consumption The paper size printed by the cooperative is applicable to the Chinese National Standard (CNS) A4 (21〇 × 297mm)

Claims (1)

501182 8 8 8 8 ABCD 々, patent application scope patent application scope: (Please read the precautions on the back before filling this page) 1. A method for repairing photoresist patterns, including at least: Providing a wafer in a wafer holder On the disc, a photoresist pattern is formed on the wafer, and the photoresist pattern has a plurality of defects; and an exposure step is performed on the defects with a radiant light spot, and the defects are irradiated to repair the defects. defect. 2. The method as described in item 1 of the patent application scope, wherein the wafer chuck is movable and is monitored by a laser interferometer. 3. The method described in item 1 of the scope of patent application, wherein the defects are an opaque defect. 4. The method described in item 1 of the scope of patent application, wherein the defects are a transparent defect. 5. The method according to item 1 of the scope of patent application, wherein the defects are phase defects. The printing of employee cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is lacking in Fan Lizhuan, which is covered by the French side of the law. Please apply if you are absent. 6 The size of this paper applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 501182 A8 B8 C8 ___D8 6. Application for patent scope 7. As described in item 1 of the scope of patent application, Wherein, the radiation spot uses an ultraviolet light. (Please read the precautions on the back before filling out this page) 8. The method described in item 1 of the scope of patent application, where the radiant light spot uses an X-ray. 9. The method according to item 1 of the patent application, wherein the radiation spot uses an electron beam. 10. The method according to item 1 of the scope of patent application, wherein the radiation spot uses an ion beam. 11. The method according to item 1 of the scope of patent application, wherein the size of one of the radiation spots is adjustable. 1 2. The method according to item 1 of the scope of patent application, wherein the shape of one of the radiation spots is adjustable. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs: t includes the middle end including the lower part, and •• the end cover includes the glazing packaging. The design of the resumption 4 in the case of the photo revision of its pictures and images, should be placed in the case, the line drawing installation case outside the cover mask purple light complex light one pole case one by one ♦ Figure 13 with a cover paper size Applicable to China National Standard (CNS) A4 specification (210X 297 mm) 501182 ABCD 6. Patent application scope-a pattern repair device, wherein the pattern repair device includes at least an electron beam imaging bar; and a wafer chuck tool is located in the pattern The duplicating device and the lower end of the pattern repairing device. 14. The device according to item 13 of the scope of patent application, wherein the duplication device uses an ultraviolet ray. 15. The device according to item 14 of the scope of patent application, wherein the wavelength of the ultraviolet rays is between about 0.1 microns and about 450 microns. 16. The device according to item 13 of the scope of patent application, wherein the pattern reproduction device uses an electron beam. 1 7. The device according to item 13 of the patent application scope, wherein the pattern reproduction device uses an ion beam. 1 8. The device as described in item 13 of the scope of patent application, in which the electronic (please read the precautions on the back before filling out this page) printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and end with -i— One, the end. The inner bottom end of the device is like a clear diameter into a hole. The beam is controlled by a potential: the diameter is enclosed in the hole. The package is controlled by a small device. The position is controlled by a bright mirror. Paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 501182 ABCD Six Consumer Property Cooperatives of Intellectual Property Bureau of the Ministry of Economic Affairs printed the application scope of patent 19. The equipment described in item 13 of the scope of patent application, where The pattern repairing device uses an ultraviolet ray. 20. The device according to item 13 of the patent application scope, wherein the pattern repairing device uses an electron beam. 2 1. The device according to item 13 of the patent application scope, wherein the pattern repairing device uses an ion beam. 22. The device according to item 13 of the scope of patent application, wherein the wafer chuck tool includes a wafer chuck, and the wafer chuck is used for performing a pattern copying step or an exposure step. 23. The device according to item 13 of the scope of patent application, wherein the wafer chuck tool includes a plurality of wafer chucks, and the wafer chucks are used for performing a pattern copying step or an exposure in parallel. step. 24. The device according to item 13 of the scope of patent application, wherein the pattern copying device uses an ultraviolet ray and the pattern repairing device uses an electron beam. 25. The device as described in item 13 of the scope of the patent application, wherein the pattern copying device uses an electron beam, and the pattern repairing device uses an ultraviolet. The paper size is applicable to China National Standard (CNS) A4 specifications (210X297 mm). ) (Please read the notes on the back before filling out this page) 501182 8 8 8 8 ABCD VI. Patent Application Line. 26. The device according to item 13 of the patent application scope, wherein the pattern copying device and the pattern repairing device can share a light source. 27. The device according to item 26 of the scope of patent application, wherein the light source is an ultraviolet light. 28. The device according to item 26 of the patent application scope, wherein the light source is an electron beam. (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper size applies to China National Standard (CNS) A4 (210X 297 mm)