TW501170B - Wafer washing apparatus and its spray head - Google Patents

Wafer washing apparatus and its spray head Download PDF

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Publication number
TW501170B
TW501170B TW90114876A TW90114876A TW501170B TW 501170 B TW501170 B TW 501170B TW 90114876 A TW90114876 A TW 90114876A TW 90114876 A TW90114876 A TW 90114876A TW 501170 B TW501170 B TW 501170B
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Taiwan
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spray
wafer
spraying
head
hole
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TW90114876A
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Chinese (zh)
Inventor
Ju-Jiun Hu
Hsiao-Che Wu
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Promos Technologies Inc
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Publication of TW501170B publication Critical patent/TW501170B/en

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Abstract

This invention provides a wafer washing apparatus and its spray head, in which the wafer washing apparatus is used to wash clean wafers consisting of a pedestal, a spray head, an ultrasonic controller and a pulse pressure controller. The pedestal is used to sustain the wafer. The spray head has a relative movement relationship with the pedestal and is used to spray water onto the wafer. The ultrasonic controller, the pulse pressure controller and the spray head are electrically connected so that the spray head can produce ultrasonic water spray or pulse water spray. There are a plural number of spray holes on the surface of the spray head facing the wafer and the water sprayed from the spray holes can cover the whole wafer surface during the relative movement between the spray head and the wafer. Moreover, there are a plural number of parallel metal lines formed on the wafer and the direction of water spray from the spray head is parallel with the direction of the formed metal lines. Through the use of the construction and arrangement of the inventive spray head, the wafer washing apparatus can wash the wafer more thoroughly and can prevent the wafer from damage during washing.

Description

501170 五、發明說明(1) 本發明係有關於一種晶圓清洗設備及其噴麗頭,特別 是有關於一種可在不損害晶圓的前提下,徹底清洗晶圓之 晶圓清洗設備及其喷灑頭。 在半導體製程中,晶圓洗淨是尤其重要的,其目的是 去除金屬雜質、有機物污染及微塵,且要考慮表面粗糙疋 度、及可能形成的自然氧化物之清除。 目前已有許多晶圓洗淨的設備被提出,其中單晶圓清 洗設備有很高的製程環境控制能力和微粒子去除率、以1 佔地小、化學品與純水量少、極富彈性的製程調整能力 等’已成為晶圓廠清洗設備的主流。 第1 a圖顯示一種習知的單晶圓清洗設備,一晶圓2被 放置於一旋轉夾頭1上,旋轉夾頭1可如箭頭A般旋轉,一 喷射頭3用以喷水至晶圓2上,且可如箭頭b般移動。 利用第1 a圖的單晶圓清洗設備洗淨晶圓時,由於是在 一邊旋轉晶圓2、一邊移動喷射頭3的狀況下,在晶圓2上 將產生如第1 b圖所示的喷水模式3 1。 以下參考第1 b圖說明習知設備的缺點: 1 · 一個喷射頭上只設有一喷嘴,在晶圓上可能有部份 區域21沒有被清洗; 2 ·當噴水方向相對於晶圓係如第丨b圖之箭頭c所示 時 曰曰圓上的微粒反而被向晶圓中心推,而無法順利移 除; 3·在高速旋轉下清洗晶圓,有可能造成晶圓的損害; 4 ·由於高速旋轉和高壓喷水,有可能損害晶圓上的金 0593-6572TWF;90033;Tungraing.ptd 第4頁 五 '發明說明(2) 屬線; 5·喷水模式並無法依據晶圓的改變而改變· 6. f晶圓内部和外侧遭受不同的喷水 . 洗净程度並不均一。 彳更日日圓的 有鑑於此,本發明之目的係為了 〜種晶圓清洗設備及其喷灑頭不 I =而提供 下,徹底清洗晶圓。 八了在不知害晶圓的前提 斑曰在本發明中’提供一㈣圓清洗設備之喷 ^曰曰圓相對移動的方式喷水至晶圓上,且在面,同八以 面上設有複數個嗜:惡:?丨 甘f日日圓的表 頭和Ϊ Ϊ “灌孔所錢的水在噴麗 碩和b曰囫相對移動的過程中,可覆蓋晶圓的整:噴灑 又=本發明中,晶圓上形成有複數個 m頭的喷水方向與金屬線的形成方向=的金屬 噴灑頭上形成。 文取辨十仃列的方式在 又在本發明中,喷灑孔至少包括第_ 噴灑孔列,第一喳:發a以丄‘、- 貝/鹿札列和第一 成,第-噴L 噴现孔的一部份以直線… 弟一喷灑孔列由喷灑孔的另一部份 且第二喷灑孔列盥馀4觉,丨仍^置線方式構成, 的每-喷:麗一喷列平行,而第二噴灑孔列中 又Ιίί ^ 噴灑孔列中的每—噴麗孔對應。 在本發明參"r當喷灑孔均為半徑為r的一形孔、 第一嘴灑孔列的相鄰哈增3 pq沾士 列鄰噴間的中心距離以及第二喷灑孔 :孔間的中心距離為a、第-喷,孔列形成的 、’ 一噴,簏孔列形成的直線間的距離為b、第一喷灑501170 V. Description of the invention (1) The present invention relates to a wafer cleaning device and a spray head, and particularly to a wafer cleaning device and a wafer cleaning device capable of thoroughly cleaning the wafer without damaging the wafer. Spray head. In semiconductor manufacturing, wafer cleaning is particularly important. Its purpose is to remove metal impurities, organic contamination, and fine dust, and to consider the surface roughness and the removal of possible natural oxides. At present, many wafer cleaning equipment have been proposed. Among them, single wafer cleaning equipment has high process environment control capability and fine particle removal rate. It has a small footprint, a small amount of chemicals and pure water, and is extremely flexible. Process adjustment capabilities etc. have become the mainstream of fab cleaning equipment. Figure 1a shows a conventional single-wafer cleaning device. A wafer 2 is placed on a rotating chuck 1. The rotating chuck 1 can rotate as an arrow A, and a spray head 3 is used to spray water to the wafer. It is on circle 2 and can move like arrow b. When the wafer is cleaned by the single-wafer cleaning device shown in FIG. 1a, the wafer 2 is displayed as shown in FIG. 1b because the wafer 2 is rotated while the jet head 3 is being moved. Water spray mode 3 1. The following describes the shortcomings of the conventional equipment with reference to Figure 1b: 1 · There is only one nozzle on a spray head, and some areas 21 on the wafer may not be cleaned; 2 · When the spray direction is relative to the wafer system As shown by arrow c in Figure b, the particles on the circle are instead pushed toward the center of the wafer and cannot be removed smoothly; 3. Washing the wafer under high-speed rotation may cause damage to the wafer; Rotating and high-pressure water spraying may damage the gold on the wafer. 5993-6572TWF; 90033; Tungraing.ptd Page 4 5'Instructions of the invention (2) The line; 5. The water spray mode cannot be changed according to the change of the wafer · 6. The wafer is exposed to different water sprays on the inside and outside. The cleaning degree is not uniform. In view of this, the object of the present invention is to provide wafer cleaning equipment and sprinkler heads to clean wafers thoroughly. In the present invention, the premise of not knowing how to harm the wafer is that in the present invention, 'a spray of a round cleaning device is provided. The water is sprayed onto the wafer in a manner that the circle is relatively moved. Multiple addictions: Evil:? 丨 f f Yen meter head and Ϊ Ϊ "The water filled in the hole can cover the whole wafer during the relative movement of spray Lishuo and bb 囫: spraying again = this In the invention, a plurality of m heads are formed on a wafer with a water spraying direction and a metal wire forming direction = formed on a metal spraying head. In the present invention, the method of identifying the ten-line array is also in the present invention, the spraying hole includes at least the first _ Spraying hole array, the first 发: 丄 a to 贝 ',-// 鹿 扎 列 and Yicheng, a part of the-spraying L spraying holes are in a straight line ... The first spraying hole lining is from the spraying holes The other part of the second spray hole row is left with 4 sleepers, and it is still constructed in a linear manner. Each of the sprays: the Li spray row is parallel, and the second spray hole row is in the ^ spray hole row. Each spray nozzle corresponds to the spray nozzle. In the present invention, when the spray nozzles are all shaped holes with a radius of r, the first nozzle spray nozzles are adjacent to each other and the spray nozzles are adjacent to each other. Distance from the center hole and the second spray: center distance between the holes is a, - of ejection holes formed in columns, 'a spray, the linear distance between the basket hole row formed is b, a first spray

i !\) 五、發明說明(3) 喷灑孔間 ,4r ‘a 大於晶0 以清洗晶 相對移動 灑頭電性 噴水;與 頭產生脈 衝壓力控 水模式; 裝置的輸 以及與高 其噴灑頭 Π:ϊ ―,壤孔與其在第二喷孔列中的對應 =離為 C 日夺,(a/3)2 + b2 = c2,3r。仏,b^2r 又在本發明中,r在0· 1mm和lmm之間。 直徑^在本發明中,喷灑頭為長方形,且其長度 圓^ ^本發明中,提供一種晶圓清洗設備,用 =俾二麗Γΐ置晶圓的基座;以及與基座有 /、的噴灑碩,用以噴水至晶圓上。 又在本發明中,晶圓清洗設備更包括:與噴 控制器’用以使喷·頭產生超音波 的脈衝壓力控制器,用以使喷麗 制^雷ht t拉分別與噴灑頭、超音波控制器和脈 的控制裳置’用以控制喷灑頭之噴 ;控制裝置電性連接的輸入裝置’用以設定控制 暂t另:與噴灑頭和控制裝置連接的高壓幫浦; 壓幫浦連接的供水裝置。 以下,就圖式說明本發明之晶圓清洗設備及 的貫施例。 i 式簡單說明 、 第la圖係顯示習知晶圓清洗設備之示意圖; 圖;第lb圖係顯示習知晶圓清洗設備噴水於晶圓上之示意 〇593-6572TW;90033;Tungming.ptdi! \) V. Description of the invention (3) Between the spraying holes, 4r 'a is greater than the crystal 0 to move the crystal relative to the sprinkler. The nozzle sprays water electrically; generates pulse pressure water control mode with the head; Head Π: ϊ ―, the correspondence between the soil hole and its second spray hole row = the distance is C, and (a / 3) 2 + b2 = c2, 3r. Alas, b ^ 2r In the present invention, r is between 0.1 mm and 1 mm. Diameter ^ In the present invention, the spray head is rectangular, and its length is round ^ ^ In the present invention, a wafer cleaning device is provided, and a pedestal of a wafer is placed on the substrate; The sprayer is used to spray water onto the wafer. In the present invention, the wafer cleaning equipment further includes: a pulse pressure controller with a spray controller to cause the spray head to generate ultrasonic waves, and a spray pressure controller to make the spray head The sonic controller and the pulse control set are used to control the spraying of the sprinkler head; the input device that is electrically connected to the control device is used to set the control time. In addition: the high pressure pump connected to the sprinkler head and the control device; Water supply unit connected to Pu. Hereinafter, the wafer cleaning equipment and the embodiments of the present invention will be described with reference to the drawings. A simple explanation of the formula, Figure la shows a schematic diagram of a conventional wafer cleaning equipment; Figure; Figure lb shows a schematic diagram of a conventional wafer cleaning equipment spraying water on a wafer 〇593-6572TW; 90033; Tungming.ptd

第6頁 501170 五、發明說明(4) 第2a圖係顯示本發明之晶圓清洗設備之喷灑頭之底視 圖; 第2b圖係顯示喷灑頭與晶圓間之示意圖; 第3a、3b圖係顯示其喷灑頭之喷灑孔間之示意圖; 第4圖係顯不本發明之晶圓清洗設備之不意圖,以及 第5a、5b圖係顯示喷灑頭之喷灑模式。 [符號說明] 1旋轉夾頭、 3喷射頭、 31喷水模式、 101 、 111 、 112 、 121 11 0第一喷灑孔列、 130第三喷灑孔列、 2 1 0 金屬線、 31 0超音波控制器、 330控制裝置、 350高壓幫浦、 370基座。 2 晶圓、 2 1 未清洗區域、 1 0 0喷灑頭、 、1 2 2喷灑孔、 120第二喷灑孔列、 2 0 0晶圓、 3 0 0晶圓清洗設備、 3 20脈衝壓力控制器 3 40輸入裝置、 3 60供水裝置、 着 本發明提供一種晶圓清洗設備及其喷灑頭,以下先參 考第2a、2b、3a和3b圖說明本發明之喷灑頭100。 如第2a和2b圖所示,本發明之喷灑頭100係以與將被 清洗的晶圓2 0 0相對移動的方式喷水至此晶圓2 0 0上,且在Page 6 501170 V. Description of the invention (4) Figure 2a shows the bottom view of the spray head of the wafer cleaning equipment of the present invention; Figure 2b shows the schematic view between the spray head and the wafer; Figures 3a, 3b The figure is a schematic diagram showing the spraying holes between the sprinkler heads; FIG. 4 is a diagram showing the intent of the wafer cleaning equipment of the present invention; and FIGS. 5a and 5b are the spraying modes of the sprinkler heads. [Symbol description] 1 rotary chuck, 3 spray head, 31 water spray mode, 101, 111, 112, 121 11 0 first spray hole row, 130 third spray hole row, 2 1 0 metal wire, 31 0 Ultrasonic controller, 330 control device, 350 high pressure pump, 370 base. 2 wafers, 2 1 uncleaned area, 100 spray head, 1 2 2 spray holes, 120 second spray hole row, 200 wafers, 300 wafer cleaning equipment, 3 20 pulses The pressure controller 3 40 input device and 3 60 water supply device provide a wafer cleaning device and a spraying head thereof according to the present invention. The spraying head 100 of the present invention will be described below with reference to FIGS. 2a, 2b, 3a, and 3b. As shown in Figures 2a and 2b, the spray head 100 of the present invention sprays water onto the wafer 200 in a manner that moves relative to the wafer 200 to be cleaned, and

0593-6572TWF;90033;Tungming.ptd 第7頁 501170 五、發明說明(5) 表面上設有複數個喷灑孔101,喷灑孔101 二的Λ 麗孔101所喷麗的水在噴灌頭100和晶圓 200的相對移動過程中,覆蓋晶圓2〇〇的整個表面。 參考第2b圖’晶圓200上形成有複數個彼此平行的金 屬線210,而噴灑頭1〇〇的噴水方向E與金屬線21〇的形成方 向F平行;藉由噴水方向E和金屬線形成方向F平行,晶圓 2 0 0上的金屬線2 1 〇不會因為喷水而受到損害。 另外,如第2b圖所示,喷灑頭1〇〇為長方形的話,其 長度應大於晶圓2〇〇的直徑,以使噴水可覆蓋晶圓2〇() 個表面。 又,如第2a圖所示,喷灑孔1 〇 1以形成複數排平行列 的方式在喷灑頭1〇〇上形成,其至少包括一第一喷灑孔列 110、一第二喷灑孔列120和一第三噴灑孔列13〇,第一噴 灑孔列110由噴灑孔101的一部份以直線方式構成,第二噴 麗孔列120則由噴灑孔101的另一部份以直線方式構成,第 二喷灑孔列1 3 0則由喷灑孔1 〇 1的另一部份以直線方式構 成,且第三噴灑孔列130、第二喷灑孔列丨2{)與第一噴灑孔 列11 0平行,而第二喷灑孔列丨2 〇中的每一喷灑孔均與、第一 噴灑孔列11 0中的每一噴灑孔對應,例如,111對應於 1 2 1、11 2對應於1 2 2,另外,第三喷灑孔列1 3 0中的每一噴 灑孔也均與第一噴灑孔列1 2 〇中的每一喷灑孔對應。 以下以第一喷灑孔列11 〇和第二喷灑孔列1 2〇來說明噴 灑頭上各喷灑孔間的關係,參考第3 a圖,假設噴灑孔1〇1 ' 均為半徑為r的一圓形孔、第一喷灑孔列11 〇的相鄰喷灑孔0593-6572TWF; 90033; Tungming.ptd Page 7 501170 V. Description of the invention (5) There are a plurality of spray holes 101 on the surface. The spray holes 101 and Λ Li Kong 101 spray water on the sprinkler head 100. During the relative movement with the wafer 200, the entire surface of the wafer 200 is covered. Referring to FIG. 2b, a plurality of parallel metal lines 210 are formed on the wafer 200, and the spraying direction E of the sprinkler head 100 is parallel to the forming direction F of the metal line 21; formed by the spraying direction E and the metal line The direction F is parallel, and the metal wire 21 on the wafer 2000 will not be damaged by water spray. In addition, as shown in Figure 2b, if the sprinkler head 100 is rectangular, its length should be greater than the diameter of the wafer 200 so that water spray can cover 20 () surfaces of the wafer. In addition, as shown in FIG. 2a, the spraying holes 100 are formed on the spraying head 100 so as to form a plurality of parallel rows, and include at least a first spraying hole row 110 and a second spraying The hole row 120 and a third spray hole row 13 are formed. The first spray hole row 110 is formed by a part of the spray hole 101 in a linear manner, and the second spray hole row 120 is formed by another part of the spray hole 101. The second spray hole row 130 is formed in a linear manner, and the other part of the spray hole 100 is formed in a linear manner. The third spray hole row 130 and the second spray hole row 丨 2 {) and The first spray hole row 11 0 is parallel, and each of the second spray hole rows 丨 2 0 corresponds to each of the spray holes in the first spray hole row 110, for example, 111 corresponds to 1 2 1 and 11 2 correspond to 1 2 2. In addition, each spray hole in the third spray hole row 1 3 0 also corresponds to each spray hole in the first spray hole row 1 2 0. The following describes the relationship between the spray holes on the spray head with the first spray hole row 11 0 and the second spray hole row 120. Referring to Fig. 3a, it is assumed that the spray holes 1001 'have a radius r A circular hole, the adjacent spray hole of the first spray hole row 11

0593-6572TlVF;90033;Tungming.ptd 第 8 頁 501170 五、發明說明(6) ----- (例如111和112)間的中心距離以及第二喷灑孔列12〇的相 鄰喷灑孔(例如1 2 1和1 2 2 )間的中心距離為a、第一喷灑孔 列110形成的直線和第二噴灑孔列120形成的直線間的距離 為b、第一喷灑孔列11〇的任一喷灑孔與其在第二喷灑孔列 1 20中的對應喷灑孔間的距離(例如丨丨丨和丨2丨)為c時,參數 r、a、b、c間產生以下的關係: 少 (a/3)2 + b2 = c2, 3r S4r, b — 2r, 4r$aS6r〇 · 口 、且藉由上述關係式,可得到如第3b圖所示的區域,此 區域代表c的範圍;藉此,喷灑頭的材質強度可獲得確 保,不至於因為喷灑孔的設置過於密集,而使得喷灑頭的 整體強度有不足的問題。 又’上述的半徑!^在〇· lm[n和lm[n之間是較佳地。 本發明之喷灑頭如上所述,以下說明參考第4圖說明 本發明之晶圓清洗設備。 晶圓清洗設備300用以清洗晶圓2〇〇,包括一基座 370、如上所述的喷灑頭1〇〇、超音波控制器3丨〇、脈衝壓 力控制器3 2 0以及控制裝置3 3 〇。 …基座370用以放置晶圓200,超音波控制器310則與喷 灑頭100電性連接,用以使噴灑頭1〇〇產生超音波喷水;脈 衝壓力控制器32 0也與噴灑頭丨〇 〇電性連接,用以使喷灑頭 1〇〇產生如第5b圖所示的脈衝式喷水;藉由設置超音波控0593-6572TlVF; 90033; Tungming.ptd page 8 501170 V. Description of the invention (6) ----- (for example, 111 and 112) center distance between adjacent spray holes in the second spray hole row 12 (For example, 1 2 1 and 1 2 2), the center distance is a, the distance between the line formed by the first spray hole row 110 and the line formed by the second spray hole row 120 is b, and the first spray hole row 11 When the distance (for example, 丨 丨 丨 and 丨 2 丨) between any spray hole and its corresponding spray hole in the second spray hole row 120 is c, the parameter r, a, b, and c are generated. The following relationship: less (a / 3) 2 + b2 = c2, 3r S4r, b — 2r, 4r $ aS6r〇 ·, and through the above relationship, the area shown in Figure 3b, this area Represents the range of c; by this, the material strength of the spray head can be ensured, so that the overall strength of the spray head is insufficient due to the dense arrangement of the spray holes. Also, the above-mentioned radius! Is preferably between lm [n and lm [n. The spray head of the present invention is as described above, and the following description refers to the wafer cleaning apparatus of the present invention with reference to FIG. 4. The wafer cleaning equipment 300 is used for cleaning the wafer 200, and includes a base 370, the sprinkler head 100 as described above, the ultrasonic controller 3, the pulse pressure controller 3, and the control device 3. 3 〇. … The base 370 is used to place the wafer 200, and the ultrasonic controller 310 is electrically connected to the spray head 100, so that the spray head 100 generates ultrasonic water spray; the pulse pressure controller 320 is also connected to the spray head丨 〇〇 Electrical connection, used to make the sprinkler 100 produce pulsed water spray as shown in Figure 5b; by setting the ultrasonic wave control

〇593-6572TW;90033;Tungming.ptd 501170 五、發明說明(7) 制器310和脈衝壓力控制器32〇, 對晶圓表面施行不同模式的清洗臂瀑頭100可依據需求而 喷灑頭100並未接受來自超音波柃,例^如,在一般狀況下, 器320的指令,而產生如第5a =制器310和脈衝壓力控制 較高的移除率時,則可藉由超立不的疋壓喷水,當需要 100產生超音波喷水’在特殊曰場皮人控^制器310而使喷灑頭 力控制器320使喷灑頭100產生如^中’則可藉由脈衝壓 水。 王如第5b圖所示的脈衝式喷 晶圓清洗設備3 0 0更包括_於 350以及一供水裝置36〇,控輪^340、-高壓幫浦 35〇、超音波控制器31〇和與高壓幫浦 用以控制錢頭_之喷水$性連接’ 33〇電性連接,藉此使用以外㈡;3二與控制装置 出1壓幫浦350分別與噴_^:^裝制/;3=的輸 幫細連接,用以經由ΐί 上裝置360與高· 頭100。 Wwm3 50供給去離子水至喷麗 藉由本發明之構成,可得到以下的優點: ·藉由喷灑孔的設置方式,· 如第1b圖所示的未清洗區域^ ;在/月洗日曰圓時並不會產生 除;、K方U &性’晶圓上的微粒均可被順利移 的損3害並非在高速旋轉下清洗晶®,因此可減少對於晶圓〇593-6572TW; 90033; Tungming.ptd 501170 V. Description of the invention (7) Controller 310 and pulse pressure controller 32 〇 The cleaning arm waterfall head 100 with different modes on the wafer surface can be sprayed according to demand. Did not accept the ultrasonic wave, for example, under normal circumstances, the instructions of the device 320, and to generate a higher removal rate such as 5a = controller 310 and pulse pressure control, you can Pressure water spray, when 100 is needed to generate ultrasonic water spray 'in the special field, the person controls the controller 310 and the sprinkler head force controller 320 makes the sprinkler head 100 such as ^', which can be achieved by pulse Press water. The pulse-type wafer cleaning equipment 300 shown in Figure 5b by Wang Ru includes 350-350 and a water supply device 36, a control wheel 340, a high-pressure pump 35, an ultrasonic controller 31, and The high-pressure pump is used to control the money _ of the water jet $ sexual connection '33 〇 electrical connection, so as to use the outer ring; 32 and the control device out of 1 pressure pump 350 and spray _ ^: ^ 装 制 /; The 3 = lower connection is used to connect to the high head 100 through the device 360. Wwm3 50 supply deionized water to spray. By the structure of the present invention, the following advantages can be obtained: · By the way of spraying holes, · unwashed area as shown in Figure 1b ^; No damage will occur when the wafer is round; the particles on the wafer can be smoothly moved. The damage is not because the wafer is cleaned under high speed rotation, so it can reduce the damage to the wafer.

五 發明說明(8) 4·由於喷水方向和金屬線形成 、本不會受到損害; 向平行,晶圓上的金 ^噴水模式可依據晶圓的改 I在晶圓内部和外側均遭改變; 曰曰 圓的洗淨程度更為均一; 的噴水速度,可使 7 ·縮短清洗時間。 雖然本發明已以鲂 :定本發明’任何熟習此項技U露=脫=並非用以 砷和範圍内,當可作苓在不脫離本發明之精 護範圍當視後附之申::2與潤•,因此本發明之保 甲明專利範圍所界定者為準。Fifth Description of the Invention (8) 4 · Due to the water spray direction and the formation of metal lines, there will be no damage; The water spray pattern of gold on the wafer can be changed inside and outside the wafer according to the change of the wafer. ; The washing degree of round is more uniform; The spraying speed of water can make 7 · shorten the washing time. Although the present invention has been based on the definition of the present invention: 'Anyone familiar with this technique, U Lu = Tu = is not used in the range of arsenic, when it can be used as Lingling without departing from the scope of the present invention, it is attached as follows: 2 And Run •, therefore, the scope of the Bao Jiaming patent of the present invention shall prevail.

Claims (1)

案號 六、申請專利範圍 1 · 一種晶 的方式噴水至 數個噴灑孔, 該晶圓相對移 2·如申請 頭,其中該晶 喷灑頭的噴水 3·如申請 其中該等 形成。 4·如申請 其中該等 灑孔列和一第 孔的一部份以 孔的另一部份 灑孔的另一部 第二噴灑孔列與該第 中的每一喷灑 應,該第三喷 中的每一喷灑 5·如申請 頭,其中當該 喷灑孔列的相 的相鄰喷灑孔 直線和該第二 頭 頭 頭 90114876 圓清洗 該晶圓 其中從 動的過 專利範 圓上形 方向與 專利範 噴灑孔 修正 專 噴 直 以 份 與 孔 /屣 孔 專 等 鄰 間 噴Case No. 6. Scope of patent application 1. A crystal sprays water to several spray holes, and the wafer moves relative to each other. 2. If an application head is used, the water spray from the crystal spray head is formed. 4. If you apply for a row of these spraying holes and a part of a first hole, another part of the second spraying hole row with another part of the hole, and each of the first spraying row, the third Each spray in the spray 5. As in the application head, when the adjacent spray holes in the spray hole row are adjacent to the straight line of the spray head and the second head 90114876, the wafer is cleaned. Shape direction and patent fan spray hole correction special spray straight to share with holes / counter-holes and other adjacent spray 日 設備之喷灑頭,以與一晶圓相對移動 上’且在面對該晶圓的表面上設有複 該等喷灑孔所噴灑的水在該喷灑頭和 程中,可覆蓋該晶圓的整個表面。 圍第1項所述的晶圓清洗設備之喷灑 成有複數個彼此平行的金屬線,而該 該金屬線的形成方向平行。 圍第2項所述的晶圓清洗設備之喷灑 以形成複數排平行列的方式在該喷灑 利範圍第2項所述的晶圓清洗設備之喷灑 灑孔至少包括一第一喷灑孔列、一第二喷 喷灑孔列,且該第一喷灑孔列由該等喷灑 線方式構成,該第二喷灑孔列由該等喷灑 直線方式構成,該第三喷灑孔列由該等喷 以直線方式構成,且該第三喷灑孔列、該 .喷灑孔列平行,而該第二喷灑孔列 均與該第一喷灑孔列中的每一喷灑孔對 孔列中的每一喷灑孔均與該第二喷灑孔列 對應。 _ 利範圍第4項所述的晶圓清洗設備之=j 喷灑孔均為半徑為r·的一圓形孔、該^ 噴灑孔間的中心距離以及該第一喷灑、 的中心距離為a、該第一喷灑孔列开y j 一 灑孔列形成的直線間的距、該二The sprinkler head of the Japanese equipment is moved relative to a wafer, and the water sprayed by the spray holes is provided on the surface facing the wafer. The sprinkler head and the process can cover the spray head. The entire surface of the wafer. The spraying of the wafer cleaning equipment described in item 1 is formed by a plurality of metal lines parallel to each other, and the forming directions of the metal lines are parallel. The spraying of the wafer cleaning equipment according to item 2 includes forming a plurality of parallel rows, and the spraying holes of the wafer cleaning device according to item 2 of the spraying range include at least one first spraying hole. Row, a second row of spraying holes, and the first row of spraying holes is formed by the spray lines, the second row of spraying holes is formed by the spray lines, and the third spraying hole The row is formed by the sprays in a straight line, and the third spray hole row and the. Spray hole row are parallel, and the second spray hole row is each sprayed with the first spray hole row Each spray hole in the hole-to-hole row corresponds to the second spray hole row. _ The wafer cleaning equipment described in item 4 of the profit range = j The spraying holes are all circular holes with a radius r ·, the center distance between the ^ spraying holes, and the center distance between the first spraying and a. The first spray hole array is opened. yj The distance between the straight lines formed by one spray hole array. 0593-6572TWF1;90033;tungming.pt c 第12頁 501170 __案號 90114876__條正___ 六、申請專利範圍 喷灑孔列的任一喷灑孔與其在該第二噴灑孔列中的對應喷 灑孔間的距離為c 時,(a/3)2 + b2==:c2 ’3r$c‘4r ’b22r ’ 4r $ a S 6r。 6 ·如申請專利範圍第5項所述的晶圓清洗設備之喷灑 頭’其中r在O.lmm和1mm之間。 7 ·如申請專利範圍第2、3、4、5或6項所述的晶圓清 洗設備之喷灑頭,其為長方形,I其長度大於該晶圓直 徑。 8·如申請專利範圍第7項所述的晶圓清洗設備之喷灑 頭’其中該晶圓靜止不動,而該喷灑頭移動。 9.如申請專利範圍第7項所述的晶圓清洗設備之喷灑 頭,其中該喷灑頭靜止不動,而該移動晶圓。 1 〇.如申請專利範圍第7項所述的晶圓清洗設備之噴灑 頭,其中該噴灑頭和該晶圓在相反方向上移動。 11.種晶圓清洗設備,用以清洗至少一晶圓,包 括: 一基座,用以放置該晶圓;以及 5嫜::〒頭’與該基座有相對移動的關係,A用以喷水 = 該喷灑頭在面對該晶圓的表面上設有複 動i從該等噴麗孔所噴麗的水在該喷灑頭和該 包括\2.如申睛專利範圍第u項所述的晶圓清洗設備,更 …制器,與該噴灑頭電性連接1以使該喷 灑頭產生超音波噴水;0593-6572TWF1; 90033; tungming.pt c Page 12 501170 __Case No. 90114876__ Article Zheng ___ 6. Any spray hole in the spray hole row of the patent application and its corresponding in the second spray hole row When the distance between the spray holes is c, (a / 3) 2 + b2 ==: c2 '3r $ c'4r' b22r '4r $ a S 6r. 6 · The spray head of the wafer cleaning equipment according to item 5 of the scope of the patent application, wherein r is between 0.1 mm and 1 mm. 7 · The spray head of the wafer cleaning equipment as described in item 2, 3, 4, 5 or 6 of the scope of patent application, which is rectangular and has a length greater than the diameter of the wafer. 8. The spray head of the wafer cleaning apparatus according to item 7 of the scope of the patent application, wherein the wafer is stationary and the spray head is moved. 9. The spray head of the wafer cleaning equipment according to item 7 of the patent application scope, wherein the spray head is stationary and the wafer is moved. 10. The spray head of the wafer cleaning apparatus according to item 7 of the scope of the patent application, wherein the spray head and the wafer move in opposite directions. 11. A wafer cleaning device for cleaning at least one wafer, including: a pedestal for placing the wafer; and 5 嫜 :: 〒 头 'has a relative movement relationship with the pedestal, and A is used for Water spray = The spray head is provided with a double action on the surface facing the wafer. The water sprayed from the spray holes is included in the spray head and the nozzle. The wafer cleaning equipment according to the item, more ... a controller, is electrically connected to the spray head 1 so that the spray head generates ultrasonic water spray; 501170 SS90U4876 曰 修正 ,其501170 SS90U4876 said correction, which 第14頁 六、申請專利範圍 一脈衝壓力控制器,與 嗔麗頭產生脈衝式的噴水; 一控制裝置,分別與該 脈衝壓力控制器電性連接, 式。 1 3 ·如申請專利範圍第1 包括: 一輸入裝置,與該控制 制裝置的輸出; 一高壓幫浦,分別與該 及 一供水裝置,與該高壓 1 4 ·如申請專利範圍第1 中該晶圓上形成有複數個彼 的喷水方向與該金屬線的形 1 5 ·如申請專利範圍第1 中該等噴灑孔以形成複數排 成。 1 6 ·如申請專利範圍第1 中該等喷灑孔至少包括一第 和一第三喷灑孔列,且該第 部份以直線方式構成,該第 一部份以直線方式構成,該 另一部份以直線方式構成, 灑孔列與該第一噴灑孔列平 該喷灑頭電性連接,用以使該 以及 喷灑頭、該超音波控制器和該 用以控制該噴灑頭之喷水模 2項所述的晶圓清洗設備,更 裝置電性連接,用以設定該控 喷灑頭和該控制裝置連接;以 幫浦連接。 1項所述的晶圓清洗設備,^ 此平行的金屬線,而該喷灑頭 成方向平行。 1項所述的晶圓清洗設備,其 平行列的方式在該喷灑頭上形 1項所述的晶圓清洗設備,其 喷灑孔列、一第二喷灑孔列 一噴灑孔列由該等喷灑孔的一 二喷灑孔列由該等喷灑孔的另 第二喷灑孔列由該等喷灑孔的 且該第三噴灑孔列、該第二喷 行,而該第二喑邐礼列中的每 Dun /uPage 14 6. Scope of patent application A pulse pressure controller, which generates pulsed water spray with Lili head; a control device, which is electrically connected to the pulse pressure controller, respectively. 1 3 · If the first scope of the patent application includes: an input device and the output of the control device; a high pressure pump, respectively, and the water supply device, and the high voltage 1 4 · as in the first scope of the patent application A plurality of water spraying directions and the shape of the metal wire are formed on the wafer. 15 · Such spraying holes as in the first patent application range form a plurality of rows. 1 6 · If the spray holes in the first patent application range include at least a first and a third spray hole row, and the first part is formed in a straight line, the first part is formed in a straight line, the other A part is formed in a linear manner, and the sprinkler row is electrically connected with the first sprinkler row and the sprinkler head, so that the sprinkler head, the ultrasonic controller, and the sprinkler head are used to control the water spray of the sprinkler head. The wafer cleaning equipment described in item 2 is further provided with an electrical connection for setting the control spray head to be connected to the control device, and connected by a pump. The wafer cleaning equipment according to item 1, ^ the parallel metal lines, and the sprinkler heads are parallel. The wafer cleaning equipment according to one aspect, wherein the wafer cleaning equipment according to one aspect is formed on the spray head in a parallel manner, and the spray hole array, a second spray hole array, and a spray hole array are formed by the spray head. One or two spraying hole rows of equal spraying holes are formed by the other second spraying hole rows of the spraying holes, the third spraying hole row, the second spraying row, and the second Every Dun / u in the salute column 喷灑孔 κ 喷灑孔列中的母 案號 90114R7i^ r、申請專利範圍 一:灑孔均與該第-噴灑孔列中的每 :喷灑孔列中的每—噴灑孔均與该第 對應。 曰闻清洗設… ^如申請專利範圍第丨6項所述的了、該第一喷灑孔 中虽戎等喷灑孔均為半徑n圖形? °列的相鄰 :的相鄰喷灑孔間的中心距離以及該第;喷線和 的中心距離為a、…嗔灑二J 一喷灑孔 “ 一噴灑孔列形成的直線間的詎離為 # _喷灑孔間 列的任-喷麗孔與其在該第二喷灑孔列中喷二a 的距離為C 時,(a/3)Hb2 = c2,3r ,b j $ 6r。 1 8 ·如申請專利範圍第1 7項所述的晶圓清洗汉備 中r在〇 · 1 mm和1 mm之間。 1 9 ·如申請專利範圍第1 1項所述的晶圓清洗汉備 中該噴灑頭為長方形,且其長度大於該晶圓直徑。 2 0 ·如申請專利範圍第1 1項所述的晶圓清洗設備’ 中該晶圓靜止不動,而該喷灑頭移動。 2 1 ·如申請專利範圍第丨丨項所述的晶圓清洗設備 中該噴灑頭靜止不動,而該移動晶圓。 2 2 ·如申請專利範圍第1 1項所述的晶圓清洗設備之 灑頭,其中該喷灑頭和該晶圓在相反方向上移動。 晶圓清洗設備,其 曰 喷灑孔 其 其 其 其 喷Spray hole κ The parent case number 90114R7i ^ r in the spray hole column, the scope of the application for a patent: the spray hole and each of the-spray hole column: each of the spray hole column-the spray hole and the first correspond. Speaking of cleaning equipment ... ^ As described in item 6 of the patent application scope, although the spray holes in the first spray hole, such as Rong, all have a radius n pattern? Adjacent to the column: the center distance between the adjacent spray holes and the first; the center distance between the spray line and the center is a, ..., spraying two J, a spraying hole, "the distance between the straight lines formed by the spraying hole row When the distance between Ren-spraying holes in the row between the spraying holes and the second spraying a in the second spraying hole row is C, (a / 3) Hb2 = c2, 3r, bj $ 6r. 1 8 · In the wafer cleaning equipment described in item 17 of the patent application scope, r is between 0.1 mm and 1 mm. 1 9 · In the wafer cleaning equipment prepared in item 11 of the patent application scope, the spraying is performed. The head is rectangular and its length is greater than the diameter of the wafer. 2 0 · In the wafer cleaning equipment described in item 11 of the patent application ', the wafer is stationary and the sprinkler head moves. 2 1 · Such as In the wafer cleaning equipment described in the scope of the patent application, the sprinkler head is stationary while the wafer is moved. 2 2 · The sprinkler head of the wafer cleaning equipment described in the scope of patent application, item 11, wherein The spray head and the wafer move in opposite directions. Wafer cleaning equipment, which is called a spray hole, and other sprays 0593-6572TWF1;90033;tungming.pt c 第15頁0593-6572TWF1; 90033; tungming.pt c p. 15
TW90114876A 2001-06-19 2001-06-19 Wafer washing apparatus and its spray head TW501170B (en)

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