TW499703B - Adapter, chamber and plasma treatment device - Google Patents

Abstract

A CVD device 1 of the present invention has a chamber 50 wherein a dome 5 is combined to an upper end of a tubular body 2. The body 2 is provided with a gas inlet 8a whereto film formation gas such as SiH4 is introduced and the dome 5 is provided with a gas inlet 8b. A disc-like adapter 9 is disposed in opposition in a circumference of the gas inlet 8a in an inner surface of the dome 5. Thereby, a space is formed between the adapter 9 and the dome 5 and the space becomes a heat insulation layer, thus restraining a temperature drop for the adapter 9 which is heated once. Thereby, reduction of reactivity between by-product attaching to the adapter 9 and fluorine radical is prevented and removal efficiency of by-product can be raised.

Description

499703 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 __ B7 _ V. Description of the Invention (1) [Technical Field] The present invention relates to related adapters, processing rooms and plasma processing devices. Specifically, it relates to an adapter used in a processing chamber for processing a contained substrate using a plasma, a processing chamber thereof, and a plasma processing apparatus for processing a substrate using a plasma. [Technical Background] A processing chamber provided in a manufacturing device such as a semiconductor device, for example, a plasma CVD processing chamber that collects a wafer of a grain substrate and performs a film formation process using a plasma on the wafer. In such a processing chamber, there are by-products contained in the exhaust gas generated during the film formation process. If this by-product is present in a large amount, so-called particles attached to the wafer will increase. In this way, the problem of low economic benefits of semiconductor components that are products will arise. Therefore, it is known to use a method of dry cleaning a fluorine-based radical in a processing chamber to effectively decompose and remove by-products existing in the processing chamber. This dry cleaning is performed in the order of, for example, carrying out wafer deposition from a processing chamber after the wafer is formed, flowing a fluorine-based gas into the processing chamber, and generating fluorine-based radicals using an electric mask. [Invention] However, in recent years, in order to improve the productivity of semiconductor devices that have evolved with miniaturization, there has been an even greater desire to further reduce particles generated in processing chambers. In view of this, if dry cleaning is used, the by-products existing in the processing chamber can be effectively removed, and its dry cleaning performance can meet a certain degree, but from the viewpoint of reducing particulates, it is required to further improve the by-products. Product removal efficiency. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 male f) -------- i ----------------------- line " — (Please read the notes on the back before filling this page)

499703 V. Description of the invention (The present invention has been made in view of the above-mentioned facts, and its purpose is to provide an adapter and a treatment which can improve the removal efficiency of by-products existing in the processing room when dry cleaning the processing room. • The chamber and the plasma processing device. In order to achieve the above-mentioned object, the adapter provided by the present invention is provided with a cylindrical body portion and a specific gas connected to the upper end of the cylindrical body portion. The cover part of the introduction part; and the processing chamber for accommodating the substrate and treating the substrate with a plasma has a shape that can cover at least a part of the interior of the processing chamber, and is arranged so that the inner surface of the processing is opposite to each other and covers at least the processing Part of the interior. If the substrate is housed in a processing room with such an adapter and plasma processing such as film formation is performed, the by-products contained in the exhaust gas generated with the film formation process will be It will be attached to the components such as the adapter arranged opposite to the processing chamber and the processing chamber. During the plasma processing, the processing chamber and the adapter will be heated with the plasma and form a warm baking shape Afterwards, when dry cleaning is performed, because the processing chamber is connected to the outside air, the inside of the processing chamber will be cooled by the outside air. To this end, a space is formed between the adapter and the processing chamber, and this space has a thermal insulation layer. Function. As a result, the adapter will not be cooled like a processing chamber. Here, the reactivity of fluorine-based free radicals in dry cleaning is generally higher at higher temperatures. Therefore, it is more attached to the processing chamber. Below the by-products on the surface, the by-products attached to the adapter will have a higher reactivity with fluorine-based radicals. As a result, compared with a conventional processing chamber without an adapter, the According to the present invention, the processing chamber equipped with an adapter will be upgraded to exist in this paper standard applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 meals) -------! ---. ! I M0 ------ Order -------- ^ Lines · (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy ^ yy / υό Economy Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperative

A7 Description of Invention (3) Removal efficiency of internal by-products. However, according to the present invention, the conventional plasma CVD processing chamber is discussed in detail, and the following problems are found. That is, (1) In general, the brake products attached to the inlets for supplying a specific gas into the processing chamber are difficult to remove by dry cleaning. In addition, the general-specific gas introduction unit is provided with a gas introduction port for introducing a specific gas, and an injection mechanism such as a nozzle connected to the gas introduction port and extending into the processing chamber. (2) The introduction part of the special reaction gas is made of ceramics. If any deterioration of this ceramic component occurs, the by-products (known as "dry cleaning residues") that cannot be removed by dry cleaning will peel off into a film shape. And the problem of forming huge particles. In view of this problem, the adapter of the present invention is placed on a place where the so-called by-products of the specific gas introduction part are difficult to remove, thereby reducing the "dry cleaning residue" that causes particles. In addition, even in the case of "when dry cleaning residues_ accumulate," there is no need to replace the entire processing room, and only the adapter needs to be replaced. Therefore, the complexity and cost of the replacement operation can be reduced. In other words, the present invention The adapter preferably has a shape that can cover at least part of the inner surface of the cover, and is arranged in such a way that the inner surface of the cover is opposite to and covers at least part of the inner surface of the cover. The shape of the periphery of the introduction portion on the inner surface is arranged so that the inner surface of the cover portion faces to cover the periphery of the introduction portion on the inner surface of the cover portion. More specifically, when the specific gas introduction portion is provided with a specific gas to be supplied into the processing chamber, The gas inlet and the paper size connecting this gas guide are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------- L -------------- --------- 丨 Line L 丨 ^ I f Please read the notes on the back before filling out this page) 499703 Printed by A7 B7, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (4) Entrance and In the case of nozzles extending into the processing chamber, The adapter is preferably provided with a through hole through which the nozzle can be inserted. When the nozzle is arranged in the processing chamber, if the nozzle is inserted or blocked into the through hole, Simple covering. Furthermore, from the viewpoint of preventing changes or changes in characteristics such as film formation characteristics of the substrate plasma treatment, it is preferable that the adapter adopt the same material type as the opposing component of the adapter, Space area (such as those forming a plate shape). For example, when the adapter is arranged at a position opposite to the ceramic cover portion, the adapter preferably has a plate shape having a shape corresponding to the shape of the inner surface of the cover portion, and at least The part including one of the surfaces is made of Tao. Also, when the processing chamber has a coil disposed above the outside of the cover and a high frequency is applied, the maximum outer diameter of the adapter is best. Below the minimum inner diameter of the coil, it has the advantage that it can further prevent the characteristics (such as film formation characteristics) of the substrate from being changed or changed during plasma processing. Furthermore, the processing chamber of the present invention is characterized by containing the substrate and utilizing electricity. Get together A person who handles the substrate includes a cylindrical body portion, a cover portion connected to the upper end of the cylindrical body portion, and the adapter of the present invention. Particularly, it is best to receive the substrate and treat the substrate with a plasma, A cylindrical portion is provided; a cover portion connected to the upper end of the cylindrical portion; a gas introduction port for introducing a specific gas, and an introduction section connected to the gas introduction port and extending to a nozzle in the processing chamber; arranged at A coil with a high frequency above the outside of the cover; and a plate-like shape with a large outer diameter below the minimum inner diameter of the coil, and a through hole that can be inserted into the nozzle, which is suitable for the paper size in the cover China National Standard (CNS) A4 specification (210 X 297 mm) ------- ^ ---.--- R0 ---- 丨 丨 Order -------- ^ line | *丨 · (Please read the precautions on the back before filling this page) 499703 A7 B7 V. Description of the invention (5) The adapters are located on the opposite side of the area surrounded by the coil and around the nozzle. Furthermore, the plasma processing apparatus i of the present invention is a person who uses an electro-processing substrate, and is characterized by including a processing chamber of the present invention, a gas supply unit for supplying specific gas 2 into the processing chamber, and adding high frequency waves. Plasma forming part in the processing chamber 'to generate plasma. [Brief description of the drawings] Figure ^ is a schematic cross-sectional view of a preferred embodiment of the plasma processing apparatus of the present invention. Fig. 2 is a sectional view showing a structure of an important part of the CVD apparatus shown in Fig. 1. Figure 3 is a schematic view of the second plate-melon section. Fig. 4 is a schematic sectional view of a part of an important part of the CVD apparatus shown in Fig. 3. Figure 5 is a schematic sectional view taken along the line V-V in Figure 4. FIG. 6A is a schematic cross-sectional view of another adapter shape according to the present invention. FIG. 6B is a schematic cross-sectional view of another adapter shape according to the present invention. [Preferred Aspects of Implementing the Invention] Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs < Please read the precautions on the back before filling this page). In the drawings, the same elements are assigned the same reference numerals, and redundant descriptions are omitted. In addition, there is no special restriction on the positional relationship, such as up, down, left, right, etc., but it is based on the positional relationship shown in the figure. As described above, Fig. 1 is a schematic cross-sectional view showing a preferred embodiment of the plasma processing apparatus of the present invention. CVD device 1 (plasma processing device) is a high density plasma (High Density Plasma; HDP) type CVD device. The paper & degree applies Chinese National Standard (CNS) A4 specifications (210 X 297 meals)

499703 V. Description of the invention (6) The cylindrical body portion 2 is provided with an introduction port 2a for introducing a wafer w formed into a substantially cylindrical shape and used as a substrate, and an upper end of the cylindrical body portion 2 is provided to be connected to the processing chamber 50. The processing chamber 50 is connected to the top part 5 as a cover part in a manner of covering the tube body part 2. This body part 2 has a gas introduction port, and a gas introduction port 8b is provided on the top part 5. In addition, a slightly circular plate-shaped adapter 9 made of the same material (for example, ceramic) as the top 5 is arranged around the gas inlet 8a on the inner surface of the top 5 and is arranged on the inner surface of the top 5 so as to cover this part Opposite position. Furthermore, a support member 3 for supporting the wafer w is provided in the barrel portion 2, and an electrostatic chuck 4 for fixing a wafer holder is provided above the support member 3. The electrostatic chuck 4 is connected to a DC power source (not shown). In addition, below the wafer W placement position in the support member 3, a lift mechanism (not shown) such as a lift pin is provided. This lifting mechanism is used to lift (up) the wafer W, and is used when the charged wafer W is brought into contact with the plasma and the charge is removed from the wafer w. The top 5 is provided with a heating plate 6 and a cooling plate 7 for setting a temperature. The gas introduction ports 8a and 8b are connected to the gas supply sources 11a to 10c through gas supply pipes 10a and 10b ', respectively. These gas supply sources 1 la to 1 lc pass through the gas introduction ports 8a and 8b, and supply a specific gas to the process 50. The processing chamber gas supply sources 1a to 11c are the supply sources of S1H4 gas, O2 gas, and Ar gas, which are specific gases, respectively. In this way, when the gas supply sources 11a to 1lc are respectively connected to the gas supply pipes 10a and 10b ', the gas supply sections are respectively formed. In addition, in the gas supply pipeline 1 〇a, 丨 〇b This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1 — ^ — — 111 — —— IIIIII ^ ----- IIL * LI (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 499703 Printed by the Employee Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ----- —__ B7____ V. Description of the Invention ") Is provided with a mass flow controller 12 that controls the amount of each gas supplied to the gas introduction ports 8a, 8b. Further, below the processing chamber 50, there is provided a throttle valve chamber 22 which is provided with two flat-plate turbine throttle valves 23 and communicates with the processing chamber 50. Below this throttle chamber 22, a turbo-molecular pump 25 is provided across the gate valve 24 to evacuate the processing chamber 50. By opening or closing the gate 24, the throttle valve chamber 22 and the suction port of the turbomolecular pump 25 can be connected or isolated. In this way, by setting the turbine throttle valve 23, the gate valve 24, and the turbo molecular pump 25, the pressure control in the processing chamber 50 during the processing of the wafer W can be stabilized. The exhaust port 26 of the turbo-molecular pump 25 is connected to a dry suction pump 28 that evacuates the vacuum in the processing chamber 50 through an exhaust pipe 27. The exhaust pipe 27 is connected to an exhaust port 29 provided in the throttle chamber 22 by an exhaust pipe 30 having an inclination throttle 31. These exhaust pipes 27,30 are provided with a partition 32,33, respectively. In addition, the processing chamber 50 is provided with a gas introduction port 16 connected to the reaction chamber 18 through a supply pipe 17 through which a dry-cleaning gas is supplied. The reaction chamber 18 is provided with a microwave generator 19 for generating plasma, and is connected to a gas supply source iic, iid through a gas supply pipe 20 at the same time. Among them, the gas supply source lid is a NF3 gas supply source, and this NF3 gas system is used as a dry cleaning gas. The gas supply line 20 is provided with a mass flow controller 21 that controls the amount of each gas supplied to the reaction chamber 18. Furthermore, coils 13a, 13b (side coils and top coils, respectively) are attached to the top 5. The coils 13a and 13b are connected to the RF generators 14a and 14b, respectively. Using the high-frequency power added by the RF generators 14a and 14b, the Chinese standard (CNS) A4 specification (210 X 297) is applied at the paper size. Mm) -------;-1 * ---------- I ------ «^ ΙΓ (Please read the precautions on the back before filling in this page) 499703

5. Description of the invention (8) Plasma is generated in the processing room 50. In this way, the coils 13a, nfc ^ RF generators 14a, 14b constitute a plasma forming section. Furthermore, between the line generators 13a, 13b and the RF generators I4a, 14b, there are provided magnetron networks 15a, 15b that integrate the output impedances of the RF generators 14a, 14b and the coils 13 ^ 131). The electrostatic chuck 4 is connected to the bias RF generator 14c through the magnetron 15e. In addition, as mentioned above, FIG. 2 is a schematic cross-sectional view of the structure of an important part shown in FIG. Figure 3 is the second diagram] n_ dish line cross-sectional view. Fig. 4 is a schematic sectional view of a part of an important part of the CVD apparatus shown in Fig. 3. Figure 5 is a schematic sectional view taken along the line V-V in Figure 4. The gas introduction port 8b constituting the top 5 of the processing chamber 50 is connected to a nozzle 80b connected to the gas supply pipe 10b. In addition, the nozzle 80b is arranged so as to extend through the adapter 9 'and extend inside the processing chamber 50, and the front end is located above the wafer w (see Figs. 2 and 3). Furthermore, as shown in FIGS. 4 and 5, a through hole 92 is provided at the center of the adapter 9 so as to pass through the nozzle 80 b. In addition, an annular groove 91 is formed on the plate surface 9a of the adapter 9 whose inner surface 5a is opposite to the top surface 5. The annular groove 91 is provided with a ring-shaped member 40 such as a flexible O-ring. The annular member 40 is fixed on the adapter 9 in a state of abutting the inner surface of the annular groove 91 of the adapter 9 and the inner surface of the top 5. In this way, a slight space is formed between the top 5 and the adapter 9. In FIG. 5, the ring-shaped member 40 is omitted. Furthermore, please return to Figure 2 and Figure 3. Adapter 9 is set to β in accordance with the following formula (1).

Dp ^ Dc… (1) This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) II: Line-Consumption by Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the cooperative 499703 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 Β7 V. Description of the invention (9) Among them, Dp refers to the maximum outer diameter of the adapter 9 and De refers to the minimum of the coil 13 b on the top 5 the inside diameter of. In other words, the top 5 is arranged around the opposite nozzle 80b in the top 5 corresponding to the back area surface (inner area “specific area”) of the area surrounded by the coil 13b. This adapter 9 has an outer diameter Dp and There are no particular restrictions, and their appropriate ranges differ depending on factors such as the diameter of the wafer w and the inner diameter of the processing chamber 50. For example, Dp is preferably 10 to 3OOmm0 ', more preferably 20 to 2OOmm0, and especially 30 to 100 mm 0 is more preferable. If Dp is lower than the above lower limit value, the periphery of the adapter 9 on the inner surface ^ of the top 5 tends to easily cause "dry cleaning residue". Conversely, if Dp is higher than the above-mentioned upper limit value, the effect of preventing huge particles from being generated will be limited, and the replacement operation of the adapter 9 will also be complicated. Furthermore, a gas introduction port 8a provided around the top portion 5 is connected to a plurality of nozzles 80a connected to the gas supply line 10a. These nozzles 80a are arranged so that the gas inlet 8a extends toward the center of the interior of the processing chamber 50, and the front end is located near the side of the wafer w. In this way, the convenient gas introduction ports 8a and the nozzles 80a, and the gas introduction ports 8b and the nozzles 80b form the introduction portions, respectively. In the first figure, the nozzles 80a and 80b are not shown. The following is a detailed description of the sequence (method) of forming a Si02 film on the wafer W by performing plasma processing on the wafer W using the CVD apparatus constructed as described above, and the dry cleaning performed thereafter. First, the wafer W is introduced into the processing chamber 50 through the introduction port, and is placed on the support member 3. Next, the turbine throttle valve 23 is opened at a specific angle, and the inside of the processing chamber 50 is depressurized by the dry suction pump 28 and the turbo molecular pump 25. When a certain pressure is reached in the processing chamber 50, the paper size will be applied to the Chinese National Standard (CNS) A4 specification (2i〇xi97 public meal) -ΓΤΓ ^^ -------- U ----- I ------ ^ -------- If (Please read the precautions on the back before filling out this page) 5. Description of the invention (10) C Please read the precautions on the back before filling out this page) The Ar gas of the supply source 11c is ejected from the nozzles 80a, 80b connected to the gas introduction ports 8a, 8b, and is supplied into the processing chamber 50. When the pressure in the processing chamber 50 reaches a specific value, the RF generator 14b applies high-frequency power to the coil 13b, thereby generating a plasma in the processing chamber 50. Next, the 02 gas of the gas supply source lib is supplied into the processing chamber 50 through the gas introduction ports 8a, 8b. The rF generator i4a applies high-frequency power to the coil 13a. At this time, the wafer w, the barrel portion 2, the top portion 5, and the like of the processing chamber 50 are heated by the plasma to form a warm-bake state. Then, a DC current is applied to the wafer through the electrostatic chuck 4 and the electrostatic chuck is turned ON, whereby the wafer W is charged in a manner of forming a specific potential to the plasma cover. Next, 8 out of 4 gases from the gas supply source 11 &amp; are ejected from the nozzles 80a, 80b connected to the gas introduction ports 8a, 8b and supplied into the processing chamber 50. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. These gases supplied in the processing chamber 50 generate active species with the plasma. In addition, the cooling of the wafers W is started a little later. As a result, the RF generator 14c penetrates the electrostatic chuck 4 to apply high-frequency power for bias to the wafer W, and the active species generated by SiH <and 〇2 are guided to the support member 3. The wafer W end reaches the wafer w, and a chemical reaction is used to form a film of SiO 2 on the wafer W. In this case, the exhaust gas supplied into the processing chamber 50 and used for film formation contains by-products such as SiO 2, and such by-products will adhere to the inside of the processing chamber 50. Secondly, after the Si02 film formation process is performed for a specific time, the supply of SiH4 gas from the gas supply source 11a is stopped, and at the same time or at the same time, the high frequency power supply by the scale generator 14c is stopped, and the bias voltage is stopped. rf. At this point, the paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 meals). 499703 Printed by A7 B7 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (11) The wafer W Film formation of SiO2 film. Then, the cooling of the wafer W is stopped, the electrostatic chuck 4 of the wafer W is closed, the high-frequency power supply from the * RF generators 14a, 14b to the coils 13a, 13b is stopped, and the supply of other gases is stopped. Further, after the wafer W is carried out from the processing chamber 50, if it is necessary to perform dry cleaning in the processing chamber 50, dry cleaning is performed. This dry cleaning can be carried out after, for example, film formation of each single wafer W 'or mother wafers w (2 to 3 wafers). In this case, for example, the gate 24 is closed first to isolate the processing chamber 50 from the turbo molecular pump 25. In this state, the processing chamber 50 is directly evacuated by the dry suction pump 28 to a vacuum. After a specific pressure is formed in the processing chamber 50, the Ar gas of the gas supply source Uc flows into the reaction chamber only by a specific amount. When the pressure in the processing chamber π is formed to a degree at which a microwave plasma can be obtained, the microwave generator 19 is used to generate the plasma. Next, the NF3 gas from the gas supply source lid is slowly flowed into the reaction chamber 18 'while the Ar gas flow rate is gradually reduced. The nf3 gas is dissociated 'in the plasma to generate fluorine-based radicals (F *) which are mainly active species. This oxygen-based radical is sent into the processing chamber 50 through the supply line 17, and reacts with by-products (8, 02, etc.) existing inside the processing chamber 50, the throttle chamber 22, and the like. The reaction products of the by-products and fluorine-based radicals are moved to the gas phase and discharged to the outside of the processing chamber 50. By this dry cleaning, by-products can be effectively removed from the processing chamber 50. After the supply of the Ar gas is stopped, for example, the dry cleaning is continued for several minutes, and then the microwave application of the microwave generator 19 is stopped, and the supply of the NF3 gas is stopped at the same time. Then began to use the dry suction pump 28 to adjust the air in the processing chamber 50 to a paper size of China National Standards (CNS) A4 (210 X 297 mm) I ---- 丨 —— 丨 丨 丨 ·· 丨 丨丨 —— 丨 Order— 丨 丨 —I 广 * ^ (Please read the notes on the back before filling in this page) 499703 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The inside of the processing chamber 50 is cleaned. In the CVD apparatus 1 having such a structure, as described above, during the film formation process, the components such as the processing chamber 50 and the adapter 9 therein are heated with the plasma, and warmed State. After the film formation is completed and the plasma disappears, the processing chamber 50 is gradually cooled by the outside air due to the contact with the external gas. In addition, the adapter 9 is not as good as the processing chamber 50 It is generally cooled. This is because the space formed between the adapter 9 and the processing chamber 50 has a heat insulation layer function, so that the heat transfer from the adapter 9 to the processing chamber 50 can be effectively blocked. Suppress the temperature drop of the adapter 9. Here, the fluorine-based radical in the dry cleaning The reactivity of the by-product Si0 2 is higher as the surface temperature becomes higher. Therefore, the by-products attached to the adapter 9 are lower than the by-products attached to the inner surface of the processing chamber 50. Reactivity with fluorene free radicals is high. Therefore, the by-products attached to the adapter 9 can be more easily removed than the by-products attached to the inner surface of the processing chamber 50. As a result, compared with the The conventional processing chamber with the adapter 9 can improve the removal efficiency of the by-products existing in the processing chamber 50 with the adapter 9, which can sufficiently suppress the generation of particles during film formation and the like. Therefore, it is possible to effectively prevent the reduction of economic benefits when manufacturing semiconductor devices such as semiconductor elements. At the same time, even when "dry cleaning residues" are stored, there is no need to replace the entire processing chamber 50, and only the adapter 9 needs to be replaced. Therefore, compared with the conventional technology, the complicated procedures required for the replacement operation of the processing room can be reduced, and the cost can be reduced. In order to confirm the efficacy of such an adapter 9, the present invention adopts a straight 0 mm ---- ---) ------ I ----- ^ ----------. 1 ( Notes on the back read and then fill this page)

499703 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

V. Description of the invention (B Φ wafer W, [A] Those with a maximum outer diameter of 30 mm φ and 100 mm 0 for the adapter 9 are respectively placed in the processing chamber 50 as shown in FIG. 2 and repeated implementation Film formation and dry cleaning. In addition, [B] except that the adapter 9 is not provided, the rest is the same as the above [A], and the film formation and dry cleaning are repeated. Then, according to the conditions of [A] and [B] above, During film formation and dry cleaning, when measuring the number of particles generated, [A] of adapter 9 will be used, and compared with [B] without adapter 9, the number of particles will be effectively reduced. In addition, even if the maximum outer diameter of the adapter 9 is either 30 mm 0 or 100 mm 0, a sufficient particle reduction effect can be obtained. Furthermore, as described above, the nozzle 80b (peripheral portion) around the nozzle 80b is compared with other It is easy to attach by-products to the parts. In CVD apparatus 1, because the adapter 9 is provided around the covering nozzle 80b, the removal of by-products existing in the processing chamber 50 can be further improved. Therefore, it is possible to sufficiently prevent the "dry cleaning residue" from occurring around the nozzle 80b. The phenomenon of huge particles caused by such "dry cleaning residues" can be sufficiently reduced, and the economic benefits during semiconductor manufacturing can be prevented from being lowered. Here, the present invention implements the film formation according to the above [A] and [B]. In the dry-cleaning test, the frequency of "He leak" which is considered to be likely to cause generation of huge particles is measured. As a result, the number of wafers processed by He until the leak according to the condition [A] is the same as that of [B] By comparison, if the conditions are increased, it can be confirmed that the frequency of "He leak" will be reduced by β ---------- W--I --- I (Please read the precautions on the back first Fill out this page again) Order!-Line · 499703

V. Description of the invention (14) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Furthermore, when the adapter 9 is composed of the same material as the top 5, there is almost no change or change in the film-forming characteristics of the wafer W. . In addition, since the adapter 9 is provided in accordance with the relationship shown in the above formula (丨), even at this point, it is possible to sufficiently prevent the change or variation of the film forming characteristics. Therefore, it is possible to suppress deterioration of the film characteristics of the film formed on the wafer W. In addition, the ring-shaped member 40 is not necessarily used for sealing or closing, and is mainly used for fixing the adapter 9. Even if it is not ring-shaped, it is not necessarily installed. In the latter case, there is no need to provide an annular groove 91 in the adapter 9. Figure 6A is a schematic cross-sectional view of the shape of another adapter 9 according to the present invention. In addition, FIG. 6B is a schematic cross-sectional view showing the shape of another adapter according to the present invention. Such an adapter 9 may also be provided with an annular recess 93 at the end of the through-hole 92. Thereby, especially when the thickness of the adapter 9 which is a plate-like body is thin, the handling property can be improved. In addition, when the adapter 9 has the annular groove 91 like the adapter 9 shown in FIG. 4, if the annular convex portion 93 is provided at the back portion corresponding to the annular groove 91, the strength of the adapter 9 can be guaranteed. The advantages. In addition, the “fixing system of the adapter 9 is, for example, an inner edge of the through-hole 92 of the adapter 9” and an outer edge of the gas inlet 8b, and screws can be screwed to each other. fixed. In addition, the shape of the adapter 9 is not limited to the illustrated shape, and may be, for example, a shape covering the entire inner surface of the top portion 5 or the entire inner surface of the processing chamber 50. Furthermore, an adapter may be provided around the nozzle 80a covering the inner surface of the processing chamber 50. In addition, the material of the adapter 9 is not limited to the same kind of material on the top 5, and the overall adapter 9 may not be formed of the same material. For example, this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297). Meal) * 15 * Negotiable (Please read the precautions on the back before filling in this page) 装 ·. Ij · ， 线. 499703 A7

V. Description of the invention (Only the part of the back surface of the plate surface 9a (the surface opposite to the wafer W) is composed of ceramics. (Please read the precautions on the back before filling this page) In addition, when the processing room When dry cleaning is performed within 50, the dry suction pump 28 and the turbo molecular pump 25 are operated at the same time. At this time, the turbo molecular pump 25 can also be used to exhaust the air using the dry suction pump 28. In addition, the throttle valve chamber 22 may not be provided. In this case, the cylinder body 2 of the processing chamber 50 may be connected to auxiliary vacuum pumps such as a turbo molecular pump 25 and a dry suction pump 28. In this type of structure, a plasma turbine is used for plasma treatment such as film formation. The molecular pump depressurizes the processing chamber 50, and when dry cleaning is performed in the processing chamber 50, the auxiliary vacuum pump can also be used to decompress the processing chamber 50. [Industrial Applicability] As described above, according to the present invention, In the case of an adapter, a processing room, and a plasma processing device, a space will be formed between the adapter and the processing room, and this space will form a thermal insulation layer to suppress the temperature drop of the adapter. This can prevent the temperature drop of the adapter. Byproduct attached to the adapter Reduced reactivity between the product and the active species originating from dry-cleaning gas. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, compared with the conventional technology without an adapter, the use of active species can be improved Removal efficiency of by-products on the connector. In this way, when dry cleaning is performed inside, the removal efficiency of by-products existing in the processing chamber can be improved. As a result, plasmas such as film formation can be sufficiently suppressed The phenomenon of particles generated during processing occurs, which can effectively prevent the economic benefit from being reduced when manufacturing semiconductor devices such as semiconductor elements. [Illustration of Symbols] 1 CVD device 2 Tube body This paper applies the Chinese National Standard (CNS) A4 specifications (21G X 297 mm) —-16-499703 A7 _B7 V. Description of invention (16) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 3 Support member 4 Electrostatic chuck 5 Top 50 Processing chamber 6 Heating plate 7 Cooling Plate 9 Adapter 12 Mass flow controller 16 Gas inlet 17 Supply line 18 Reaction chamber 19 Microwave generator 20 Gas supply line 21 Mass flow control Controller 22 Throttle valve chamber 23 Turbine seal width 24 Brake width 25 Turbo molecular pump 26 Exhaust port 27 Exhaust pipe 28 Dry suction pump 29 Radon port 30 Exhaust pipe 31 Inclined throttle width 31 Inclined throttle width 32 Isolation valve 33 Isolation width 40 Ring-shaped member 91 Ring-shaped groove 92 Through-hole 93 Ring-shaped projection 10a Gas supply line 10b Gas supply line 11a Gas supply source lib Gas supply source 11c Gas supply source lid Gas supply source 13a Coil 13b Coil 14a RF generator 14b RF generator 14c RF generator 15a Magnetron 15b Magnetron 15c Magnetron 2a Inlet 5a Inner surface 80a Nozzle 80b Nozzle 8a Gas inlet 8b Gas inlet 9a Plate surface (Please read the back Note: Please fill in this page again) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -1 /-

Claims (1)

499703 A8 B8 C8 ----D8 • -------- 6. Scope of patent application 1. A connector characterized by having a cylindrical body formed in a cylindrical shape and being connected to the barrel The cover at the upper end of the body with a specific gas introduction portion is an adapter used in a processing chamber that contains a substrate and is treated with a plasma, and has a shape that can cover at least part of the interior of the processing chamber. And disposed on the inside of the process facing oppositely and covering at least a part of the inside of the process. 2 · The adapter according to item 1 of the patent application siege has a shape that can cover at least part of the inner surface of the cover part, and is arranged so that the inner surface of the cover part is opposite to and covers at least part of the inner surface of the cover part. . 3. The adapter as described in item 丨 of the scope of patent application, the fixture can cover the shape around the introduction portion of the inner surface of the cover portion, and is arranged on the introduction portion of the inner surface of the cover portion facing and covering the inner surface of the cover portion. Surrounding β 4 · As described in the first patent application scope, when the specific gas introduction part is provided with a gas introduction port for introducing the specific gas supplied into the processing chamber, and connected to the gas introduction port When it extends to the nozzle in the processing chamber, a through hole is provided for inserting the nozzle. 5 · The adapter described in item 1 of the scope of patent application, when the processing chamber is provided with a coil disposed above the cover and provided with a high frequency, the maximum outer diameter is within the minimum of the coil Diameter below. 6 · —A kind of processing room, characterized in that the processing room containing the substrate and processing the substrate with a plasma is provided with: This paper size is applicable to China National Standard (CNS) A4 (2 hearts 297 mm) '77 ^ I (Please read the precautions on the back before filling this page) Order: l·Line 丨 I ** Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 499703 A8 B8 C8 D8 The scope of the patent application forms a cylindrical barrel portion; a cover portion connected to the upper end of the barrel portion; has a shape that can cover at least a part of the interior of the processing chamber and is arranged opposite to the processing inner surface and covers at least the processing chamber 'Some of these adapters. ® 7 · —A processing chamber characterized by: a processing chamber containing a substrate and processing the substrate with a plasma, comprising: a cylindrical barrel portion; a cover portion connected to the upper end of the barrel portion; A gas-conducting population that introduces a specific gas, and an introduction portion that connects the gas inlet and extends into the processing chamber; a coil that is disposed above the cover and is given a high frequency; and a plate that is slightly plate-shaped and facing the outside The diameter is T in the minimum inner diameter of the coil, and has a | plug ^ 丨, # ^ Μ page jack that can be inserted through the nozzle, and is disposed in the cover portion corresponding to the back area of the area surrounded by the coil and Adapter at this nozzle peripheral position. 8 · —A plasma processing device, characterized in that: a plasma processing device for processing a substrate using a plasma, comprising: a processing chamber described in item 6 or 7 of a patent application scope; and supplying a specific gas into the processing chamber A gas supply unit and a plasma forming unit that apply high frequency to the processing chamber and generate plasma in the processing chamber. The size of this paper is applicable to the national standard of the country f: the domestic production -------------------- order --------- line-f (Please read the notes on the back before filling this page) -19-