經濟部智慧財產局員工消費合作社印製 499494 A7 B7 五、發明説明（1 ) 發明之詳細說明 發明所屬技術領域 本發明係有關藉由磁控濺射於玻璃基板等各種基板上 形成薄膜之方法及裝置。 習知技術 過去，就形成薄膜於液晶用等較大面積之基板上之濺 射裝置而言，如第1及2圖所示，已知有在具備真空排氣 系統之真空室a內對向設置基板b及靶c ，在安裝該靶之 磁控濺射陰極d上，沿滾珠螺桿h，往復移動自如設置複 數個磁鐵e，f構成之磁鐵組合體g，於該靶c前方形成 與電場正交之移動自如磁場而成膜於該基板b上者。 又，爲了低功率密度且高速率於大面積基板上成膜， 亦已知有如第3及4圖所示，平行並排複數個磁鐵組合體 g，g，使靶側之磁鐵極性互異，以適當移動裝置，沿靶 背面往復移動此等組合體之濺射裝置（特許第 2 5 5 5 0 0 4號公報）。惟，磁性互異會造成磁場分佈 如第4圖所示不均一，難以厚變均一成膜。爲了使此分佈 均一，有人提議，如第5圖所示，於該組合體b之高度位 置配置差Η，或如第6圖所示，於平面長度配置差L (特 開平9 — 1 2 5 2 4 2號公報）。 發明所欲解決之問題 基板種類，膜種類一改變，成膜條件亦改變’上述習 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） — I.----------·♦---- 訂ί ----- i—· (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 499494 A7 B7 五、發明說明（2 ) 知例有每逢其改變即須調整高度，長度，調整煩瑣之缺點 。又，如第7圖所示，由於在磁鐵組合體g前方之耙C表 面，各組合體之磁極配置不同，故漂移電子之旋轉方向相 反，因而.，於組合體間，電子漂移入口側之靶較出口側者 濺射更大，發生所謂不均凹溝1 ，有無法進行前述調整， 靶之壽命即變短之不適當情形。復且，途中若不進行調整 ，膜厚分佈亦會惡化。亦即，須經常進行調整。 本發明旨在提供無需磁場調整，不易在靶發生不均凹 溝之濺射方法及裝置。 、 用以解決問題之手段 爲達成前述目的，本發明濺射方法係於具備真空排氣 系統之真空室內對向設置基板及靶，於安裝該靶之磁控濺 射陰極背後平行設置具備複數個磁鐵之複數組磁鐵組合體 ，在該靶前方形成與電場正交之環狀磁場，藉由該靶前方 發生之磁控放電，於該基板上進行成膜者，配置各磁鐵組 合體之磁鐵，使爲各磁鐵組合體之磁場限制而於該陰極前 面成環狀漂移之漂移電子之旋轉方向於全磁鐵組合體中爲 同向。本發明方法可藉由濺射裝置確實實施，其中構成各 磁鐵組合體之磁鐵之面對該陰極側之磁極互異，且，鄰接 之請磁鐵組合體鄰接配設相同磁極之磁鐵，形成爲各磁鐵 組合體限制於各個磁場之獨立電子漂移之環狀軌道。較佳 地，以安裝於板狀磁軛之均一高度之永久磁鐵構成組成該 磁鐵組合體之複數磁鐵之各磁鐵，以安裝於該磁軛中央部 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -5 - (請先閱讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 499494 A7 B7 V. Description of the invention (1) Detailed description of the invention The technical field of the invention The invention relates to a method for forming a thin film on various substrates such as glass substrates by magnetron sputtering and Device. Conventional technology In the past, as for a sputtering device for forming a thin film on a substrate having a large area such as a liquid crystal, as shown in FIGS. 1 and 2, it is known to face each other in a vacuum chamber a having a vacuum exhaust system. A substrate b and a target c are provided, and a magnet assembly g composed of a plurality of magnets e and f is freely reciprocated along a ball screw h on a magnetron sputtering cathode d on which the target is mounted, and an electric field is formed in front of the target c. The orthogonal moving free magnetic field is formed on the substrate b. In addition, in order to form a film on a large-area substrate with a low power density and a high rate, it is also known that a plurality of magnet assemblies g, g are arranged side by side as shown in Figs. Appropriately move the device and reciprocate the sputtering device for these assemblies along the back of the target (Patent No. 2 55 0 04). However, magnetic differences cause uneven magnetic field distributions, as shown in Figure 4, and it is difficult to form thick and uniform films. In order to make this distribution uniform, it has been proposed that, as shown in FIG. 5, a difference 配置 is arranged at the height position of the combination b, or as shown in FIG. 6, a difference L is arranged at the plane length (Japanese Patent Laid-Open No. 9 — 1 2 5 2 4 Bulletin 2). The problem to be solved by the invention is that the substrate type and the film type are changed, and the film forming conditions are also changed. The above-mentioned paper size of the paper is applicable to China National Standard (CNS) A4 (210 X 297 mm) — I .------ ---- · ♦ ---- Order ί ----- i- · (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 499494 A7 B7 V. Description of the invention (2) Known examples have the disadvantages of having to adjust the height, length, and adjustments every time they change. In addition, as shown in FIG. 7, the surface of the rake C in front of the magnet assembly g has different arrangement of the magnetic poles of each assembly, so the rotation direction of the drift electron is opposite. Therefore, between the assemblies, the electron drift inlet side The target has a larger sputtering than the exit side, so-called uneven grooves 1 occur, and it is not appropriate to make the aforementioned adjustments and shorten the target life. Moreover, if no adjustment is made on the way, the film thickness distribution will also deteriorate. That is, adjustments must be made frequently. The present invention aims to provide a sputtering method and device that do not require magnetic field adjustment and are not prone to uneven grooves in a target. Means for solving the problem In order to achieve the foregoing objective, the sputtering method of the present invention is to set a substrate and a target in a vacuum chamber provided with a vacuum exhaust system, and a plurality of the magnetron sputtering cathodes in parallel with the target are provided in parallel. The complex magnet assembly of magnets forms a ring-shaped magnetic field orthogonal to the electric field in front of the target, and a magnetron discharge generated in front of the target is used to form a film on the substrate, and the magnets of each magnet assembly are arranged. The direction of rotation of the drifting electrons, which is restricted by the magnetic field of each magnet assembly and drifts in a ring in front of the cathode, is the same direction in the all-magnet assembly. The method of the present invention can be surely implemented by a sputtering device, in which the magnetic poles of the magnets constituting each magnet assembly facing the cathode side are different from each other, and the adjacent magnet assemblies are arranged adjacent to the magnets of the same magnetic pole, and are formed as each The magnet assembly is limited to a ring-shaped orbit of independent electron drift of each magnetic field. Preferably, the permanent magnets installed at the uniform height of the plate-shaped yoke constitute the magnets of the plurality of magnets constituting the magnet assembly, and are installed in the central part of the yoke. The paper size applies the Chinese National Standard (CNS) A4 specification. (210 X 297 mm) -5-(Please read the notes on the back before filling this page)
0P 訂--------- 499494 A7 B7 五、發明說明（3) 之長形永久磁鐵及將其圍繞之環狀永久磁鐵構成該永久磁 鐵，亦可藉由平行於該靶往復移動之移動裝置移動複數組 磁鐵組合體之全部或一部份。 發明之實施形態 — 茲根據圖式就本發明實施形態加以說明，於第8及9 圖中，符號1標示具備連接與真空泵連通之真空排氣系，統 之真空排氣口 2及濺射氣體導入口 3之真空室，4標示藉 適當基板保持裝置保持於該真空室1 .內之玻璃板等基板， 5標示對向該基板4設於該真空室1內之靶。該靶5連接 於R F電源，D C電源等電源，並安裝於背後具備磁鐵之 磁控濺射陰極6，在藉由濺射於該基板4上進行成膜時， 於該陰極6與該真空室1之室壁，基板4 (陽極）之間發 生磁控放電。， 設在該陰極6背後之磁鐵係用來於該靶5前方形成與 電場正交之磁場，將電子限制在該靶5之表面附近者，由 至少二個永久磁鐵等磁鐵8 a，8 b組成之磁鐵組合體8 構成，於該陰極5前方形成環狀閉鎖磁極9，俾磁力線於 該靶5表面閉合，且電子可長漂移。由於電子限制於該磁 極9，故即使濺射電力小，電子密度亦提高，離子朝該靶 衝擊量增加，濺射速度提高。一般而言，配置成，該靶5 使用較該基板4尺寸大些許者，在該基板4及靶5之尺寸 大情形下，將該磁鐵組合體8安裝於滾珠螺桿1 〇 a所構 成之移動裝置1 〇，此滾珠螺桿1 0 a藉例如沿該陰極6 表紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) :6_ (請先閱讀背面之注意事項再填寫本頁) 1T---------l^ew. 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 499494 A7 B7 五、發明說明（4) 背後設置之電動機來旋轉，藉由隨著該滾珠螺桿1 〇 a正 逆旋轉，沿該陰極6背後往復移動該磁鐵組合體8 ’磁場 9掃掠該靶5表面，而以小型磁鐵組合體8進行磁控濺射 〇 面對構成該磁鐵組合體8之磁鐵8 a ，8 b之該靶5 側之磁極設定成磁極互異，圖示者以S極於長棒狀磁鐵 8 a而N極於將其圍繞之角形環狀磁鐵8 b相面對方式安 裝於磁軛8 c。於此情形下，磁控濺射時，電子限制於角 形重構狀磁場而漂移。藉由設置複數組該磁鐵組合體8， 固然可縮短移動裝置1 0之移動距離，提高濺射速度，惟 著各磁鐵組合體8之該靶5側出現之磁極爲互異，即如前 述發生磁場9不均一，無法進行均一成膜，於靶形成不均 凹溝之不適當情形。因此，本發明配置各磁鐵組合體8之 磁鐵，使藉由各磁鐵組合體8之磁場漂移之漂移電子之旋 轉方向爲同向，使藉由各磁鐵組合體8形成之磁場9均一 化，於基板4上進行均一厚度之成膜，俾靶5上不致於發 生不均凹溝。 爲了使各磁鐵組合體8之漂移電子之旋轉方向同向， 於各磁鐵組合體8本身配置磁鐵8 a ，8 b於該靶5側之 面之磁極，使其沿面方向出現互異磁極，藉此使電子朝自 該靶5側者來右轉方向漂移，進一步藉由在該陰極6背後 平行並排設置複數組，例如5組此磁鐵配置之磁鐵組合體 8，使相鄰磁鐵組合體8，8同極定位，電子在對面互通 狀態下流通（draft )，藉此，使靶5上之電子密度均一化 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -7 - 11_-------------- —訂--------- ^ilt (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 499494 A7 B7 五、發明說明（5) ，解除不均凹溝。圖示例子將各磁鐵組合體8之凹台（ boss )插通一滾珠螺桿之移動裝置1 0及二導軌1 1 ，一 面保持其與該靶5之間隔，一面進行穩定的往復移動。該 磁鐵8 a ，8 b之強度依濺射電力，該靶之面積，材質， 厚度等濺射條件適當設定。且，由於藉由使用例如5組磁 鐵組合體5，相較於該組合體爲1組情形僅對各磁鐵組合 體8輸入1/5的功率密度，故冷卻，異常放電之發生等 爲1/5，相反地，若爲同一位準，即可對陰極全體輸入 5倍的功率，獲得5倍的濺射率。 〔實施例〕 將氬濺射氣體導入該真空室1內，調整其壓力爲 〇· 7Pa ，將40kW之DC電力輸入該陰極6。基板 4爲厚度0.7mm(毫米），寬度550mm，長度 6 5 0 m m之玻璃，爲形成F P D用電極配線膜於其上， 安裝厚度1〇mm ，寬度9〇〇mm ，長度1〇〇〇mm 之鋁製靶5於該陰極6。磁鐵組合體8具備長棒狀磁鐵 8a及將其圍繞之磁鐵8b ，成寬度100mm，長度 1 0 0 0 m m之長方形平面形狀，如第8圖所示，於該靶 側保持N，. S，N磁極配置。此等磁鐵使用於其表面上 5 0 m m位置產生2 0 0高斯水平磁場者。如圖示，平行 安裝5個與此磁鐵組合體8相同構造者於移動裝置1 0， 每分鐘往復移動其全部1 0次。 在形成3 0 0 0 A (埃）厚之薄膜於該基板4後，測 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) ^ _!---------ft —— —訂-------- —丨t (請先閱讀背面之注意事項再填寫本頁) 499494 A7 ___B7 ___ 五、發明說明（6 ) 定各基板4之膜厚分佈，結果爲士 5 %之分佈，對應於各 磁鐵組合體8之鄰接部之靶5部份亦平均消耗。爲求比較 ，使用第4圖之磁鐵配置之磁鐵組合體’測試基板上厚度 3 Ο Ο Ο A之成膜，結果，於靶5上發生不、·均凹陷，於 1 5 0 0 k W h下，靶開孔，其膜厚分佈爲± 2 0 %。 〔發明效果〕 如以上，根據本發明，由於配置各磁鐵組合體之磁鐵 ，使同時用於磁控濺射之複數組磁鐵組合體之漂移電子之 旋轉方向同向，故可均一膜厚分佈成膜於大面積基板上， 不易在靶上發生不均凹溝，可延長其壽命，提高成膜效率 ，由於可使用相同構造之磁鐵組合體來構成裝置，故具有 無需磁場調整，裝置可簡單，廉價製作，其維護亦容易等 效果，藉由申請專利範圍第2項以後之構造，可確實實施 本發明方法。 (請先閱讀背面之注意事項再填寫本頁) 明 說 單 簡 之 式 圖 經濟部智慧財產局員工消費合作社印製 圖 第第第 圖 視 背 之 置 裝 射 濺 控 磁 知 習 係 圖 明 說 之 體 。 合 圖組 視鐵 剖磁 之之 份置 部裝 線射 2 濺 - 控 2 磁 之一 圖另 1 知 第習 係係 圖圖 視 剖 之 體 合 。 組 圖鐵 視磁 剖之 之置 部裝 線射 4 濺 I 控 4 磁 之一 圖另 3 知 第習 係係 .圖 圖 4 5 ο 第第圖 明 說 本紙張尺度適用中國國家標準（CNS)A4規格(210 x 297公釐） -v7 499494 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（7) 第6圖係習知又另一磁控濺射裝置之磁鐵組合體之說 明圖。 第7圖係使用第3圖配置之磁鐵組合體時於靶發生單 不均凹溝狀態之說明圖。 第8圖係顯示本發明實施狀態之背視圖。 第9圖係對應於第8圖之9 - 9線部份之部份省略剖 視圖。 第1 0圖係第8圖之磁鐵組合體之斜視圖。 第1 1圖係使用第8圖配置之磁鐵組合體時於靶發生 單側凹陷狀態之說明圖。 符號說明 1 真空室 4 基板 5 靶 6 磁控濺射陰極 8 a，8 b 磁鐵 8 c 磁軛 9 磁場 1 0 移動裝置 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） —,----------·#-----訂-丨-------丨Φ (請先閱讀背面之^事項再填寫本頁)0P Order --------- 499494 A7 B7 V. Description of the Invention (3) The long permanent magnet and the ring-shaped permanent magnet surrounding it constitute the permanent magnet, and can also be reciprocated by parallel to the target The moving device moves all or part of the complex magnet assembly. Embodiments of the invention-The embodiments of the present invention will be described in accordance with the drawings. In Figures 8 and 9, reference numeral 1 indicates a vacuum exhaust system provided with a connection to a vacuum pump, a vacuum exhaust port 2 and a sputtering gas. The vacuum chamber 4 of the inlet 3 indicates a substrate such as a glass plate held in the vacuum chamber 1 by an appropriate substrate holding device, and 5 indicates a target provided in the vacuum chamber 1 opposite the substrate 4. The target 5 is connected to a power source such as an RF power source, a DC power source, and is mounted on a magnetron sputtering cathode 6 provided with a magnet on the back. When a film is formed on the substrate 4 by sputtering, the cathode 6 and the vacuum chamber are formed. A magnetron discharge occurs between the chamber wall 1 and the substrate 4 (anode). The magnet provided behind the cathode 6 is used to form a magnetic field orthogonal to the electric field in front of the target 5 and to confine electrons near the surface of the target 5 by at least two permanent magnets 8 a, 8 b The composed magnet assembly 8 is formed, and a ring-shaped latching magnetic pole 9 is formed in front of the cathode 5. The magnetic field lines are closed on the surface of the target 5, and the electrons can drift long. Since the electrons are limited to the magnetic pole 9, even if the sputtering power is small, the electron density is increased, the amount of impact of ions toward the target is increased, and the sputtering speed is increased. Generally speaking, it is configured that the target 5 uses a slightly larger size than the substrate 4, and when the sizes of the substrate 4 and the target 5 are large, the magnet assembly 8 is mounted on a movement constituted by a ball screw 10a Device 10, this ball screw 10a applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) along the paper size of the cathode 6 sheet, for example: 6_ (Please read the precautions on the back before filling this page) 1T --------- l ^ ew. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by 499494 A7 B7. 5. Description of the invention (4) The motor installed on the back to rotate By rotating the ball screw 10a forward and backward, the magnet assembly 8 'is reciprocated along the back of the cathode 6 and the magnetic field 9 sweeps the surface of the target 5, and the small magnet assembly 8 is used for magnetron sputtering. The magnetic poles facing the magnets 8 a and 8 b on the target 5 side of the magnet assembly 8 are set so that the magnetic poles are different from each other. The figure shows that the S pole is longer than the long rod magnet 8 a and the N pole is the angular shape surrounding it. The ring magnets 8 b are attached to the yoke 8 c so as to face each other. In this case, during magnetron sputtering, the electrons are constrained by the angularly reshaped magnetic field and drift. By setting the plurality of magnet assemblies 8, it is possible to shorten the moving distance of the mobile device 10 and increase the sputtering speed, but the magnets appearing on the target 5 side of each magnet assembly 8 are extremely different from each other, that is, as described above. The magnetic field 9 is not uniform, making it impossible to perform uniform film formation, and it is not appropriate to form uneven grooves in the target. Therefore, the present invention arranges the magnets of each magnet assembly 8 so that the rotation direction of the drifting electrons caused by the magnetic field drift of each magnet assembly 8 is the same direction, so that the magnetic field 9 formed by each magnet assembly 8 is uniformized, Films of uniform thickness are formed on the substrate 4 so that uneven grooves do not occur on the target 5. In order to make the rotating direction of the drifting electrons of each magnet assembly 8 in the same direction, the magnets 8 a and 8 b on the surface of the target 5 side are arranged on each magnet assembly 8 itself, so that mutually different magnetic poles appear in the surface direction. This causes the electrons to drift in a right-handed direction from the target 5 side, and further, by setting a plurality of parallel arrays side by side behind the cathode 6, for example, five sets of the magnet combination 8 configured by this magnet, so that the adjacent magnet combination 8 8Positive positioning, electrons circulate in the state of intercommunication (draft), so that the density of electrons on target 5 is uniformized. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -7- 11 _-------------- --Order --------- ^ ilt (Please read the notes on the back before filling this page) System 499494 A7 B7 5. Description of the invention (5), lifting uneven grooves. In the example shown in the figure, the recess (boss) of each magnet assembly 8 is inserted into a moving device 10 and two guide rails 1 1 of a ball screw, while maintaining a space between it and the target 5, while performing a stable reciprocating movement. The strengths of the magnets 8 a and 8 b are appropriately set according to sputtering conditions, such as the area, material, and thickness of the target. In addition, by using, for example, five sets of magnet assemblies 5, only 1/5 of the power density is input to each magnet assembly 8 compared to the case where the assembly is one set, so the occurrence of cooling, abnormal discharge, etc. is 1 / 5. Conversely, if the level is the same, 5 times the power can be input to the entire cathode to obtain 5 times the sputtering rate. [Example] An argon sputtering gas was introduced into the vacuum chamber 1, the pressure was adjusted to 0.7 Pa, and a DC power of 40 kW was input to the cathode 6. The substrate 4 is a glass having a thickness of 0.7 mm (mm), a width of 550 mm, and a length of 650 mm. In order to form an electrode wiring film for FPD thereon, a thickness of 10 mm, a width of 900 mm, and a length of 1,000 mm are installed. An aluminum target 5 is on the cathode 6. The magnet assembly 8 is provided with a long rod-shaped magnet 8a and a magnet 8b surrounding it, and has a rectangular planar shape with a width of 100 mm and a length of 100 mm. As shown in FIG. 8, N is held on the target side. S, N magnetic pole configuration. These magnets are used for those who generate a 200 Gauss horizontal magnetic field at 50 mm on the surface. As shown in the figure, five persons having the same structure as the magnet assembly 8 are mounted on the moving device 10 in parallel, and all of them are reciprocated 10 times per minute. After forming a 3 0 0 A (Angstrom) thick film on the substrate 4, the paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) ^ _! -------- -ft —— —Order -------- — 丨 t (Please read the precautions on the back before filling this page) 499494 A7 ___B7 ___ V. Description of the invention (6) Determine the film thickness distribution of each substrate 4. The result is a distribution of ± 5%, and the target 5 portion corresponding to the adjacent portion of each magnet assembly 8 is also consumed on average. For comparison, a magnet assembly of the magnet configuration shown in FIG. 4 was used to form a film with a thickness of 3 〇 Ο Ο A. As a result, unevenness and depression occurred on the target 5 at 1 500 k W h The target is open, and its film thickness distribution is ± 20%. [Effects of the Invention] As described above, according to the present invention, since the magnets of each magnet assembly are arranged so that the rotation directions of the drift electrons of the complex magnet assembly used for magnetron sputtering are the same, the uniform film thickness distribution can be formed. The film is on a large-area substrate, which is not prone to uneven grooves on the target, which can prolong its life and improve the film formation efficiency. Since the device can be formed by using a magnet assembly with the same structure, there is no need to adjust the magnetic field, and the device can be simple. It can be produced cheaply, and its maintenance is also easy to wait. With the structure after the second patent application, the method of the present invention can be carried out reliably. (Please read the notes on the back before filling out this page.) Explanation of the form Simplified chart Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Employee Consumer Cooperative Cooperatives Print the first picture The installation of the sputtering control magnetism is shown in the figure . Hetu group is a part of the magnetic iron dissection magnet, which is installed in the line and 2 splashes-one of the two magnets. The other one is the combination of the diagram and the visual dissection. The picture of the iron magneto-optical section of the installation line is shot 4 splash I control 4 magnetic one figure and the other 3 knowledge system. Figure 4 5 ο The figure shows that this paper size applies Chinese National Standard (CNS) A4 Specifications (210 x 297 mm) -v7 499494 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (7) Figure 6 is a description of the magnet assembly of another conventional magnetron sputtering device Illustration. Fig. 7 is an explanatory diagram showing a state where a single uneven groove is generated on a target when the magnet assembly configured in Fig. 3 is used. Fig. 8 is a back view showing the state of implementation of the present invention. Fig. 9 is a cross-sectional view of a portion corresponding to the line 9-9 of Fig. 8 omitted. Fig. 10 is a perspective view of the magnet assembly of Fig. 8. Fig. 11 is an explanatory diagram of a state where a single-side depression occurs on a target when the magnet assembly configured in Fig. 8 is used. DESCRIPTION OF SYMBOLS 1 Vacuum chamber 4 Substrate 5 Target 6 Magnetron sputtering cathode 8 a, 8 b Magnet 8 c Yoke 9 Magnetic field 1 0 Mobile device This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) —, ---------- # ----- Order- 丨 ------- 丨 Φ (Please read the ^ items on the back before filling this page)