494469 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 發明領域： 本發明係有關於一種光罩修補之方法，特別是有關於 一種運用雙聚焦離子束（Dual F〇cused I〇n Beam)之光罩修 補的方法。 發明背景： 一般而言，光罩之製造係在例如石英之絕緣透明基材 上彼覆沉積例如鉻（Cr)之不透明薄膜，接著形成一光阻覆 蓋此不透明薄膜，再例如以電子束之高解析度的曝光技術 曝光’並經顯影以在光阻上形成所需 方式將此圖案轉移到不透明薄膜，而在光罩上=透日」 域與不透明區域。 然而，在光罩的製造過程時，無法形成完美無缺之光 罩’因此在進行圖案複製之微影製程時，f先進行光罩缺 陷修補。…之缺陷可分為透明缺陷或不透明缺陷，其 中透明缺陷係在此缺陷區域上原本應該具有不透明薄膜但 實際上卻沒有’而不透明缺陷則係在此缺陷區域上原本應 該沒有不透明薄膜但實際上卻有。 -般所使用之光罩修補技術例如有雷射光束_ (請先閱讀背面之注意事項再填寫本頁) -· i n n n I— n I 一 0, · n tmm— a^i ϋ n n n I . 494469 A7 B7 五、發明說明（）494469 Printed A7 B7 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Field of the invention: The present invention relates to a method for repairing a photomask, and in particular to a method using dual focus ion beam (Dual F0cused I 〇n Beam) mask repair method. Background of the Invention: Generally speaking, the manufacture of photomasks is to deposit an opaque film such as chromium (Cr) on an insulating transparent substrate such as quartz, and then form a photoresist to cover the opaque film, and then, for example, the height of the electron beam Resolution exposure technology exposes and develops this pattern to an opaque film in a desired manner on the photoresist, and on the photomask = transparent day domain and opaque area. However, during the manufacturing process of the photomask, a perfect photomask cannot be formed. Therefore, during the photolithography process of pattern reproduction, f is first repaired for the defect of the photomask. Defects of… can be classified as transparent defects or opaque defects, where transparent defects should have an opaque film on the defect area but actually have no 'opaque defects on the defect area should have no opaque film but actually But there is. -Generally used mask repair technology such as laser beam_ (Please read the precautions on the back before filling this page)-· innn I— n I a 0, · n tmm— a ^ i ϋ nnn I. 494469 A7 B7 V. Description of the invention ()
Beam)、聚焦離子束、以及原子力顯微鏡（At〇rnic F〇rce Microscopy)專。由於，雷射光之解析度有限，雷射燒姓可 此會移除與缺陷區域相鄰之不透明薄膜，而傷害到光罩圖 案。此外，由於雷射光會傳遞大量之熱能，所以不僅會溶 解並洛發不透明缺陷，亦會導致此不透明缺陷之鄰近或下 層的石英受到傷害而變粗糙，進而降低石英之透光率及改 變透射光之相位。由於聚焦離子光束之聚焦尺寸遠小於雷 射光束，因此，就修補準確度以及產量方面，聚焦離子束 佔有極大優勢，故聚焦離子束已成為廣為運用的一種光罩 修補之技術。 然而’運用聚焦離子束進行光罩修補仍有數個問題待 克服。首先，由於光罩係在例如石英之基材上形成，而石 英為一種絕緣材料，因此離子束會使基材表面帶電，並降 低利用離子束以使其結果成像之能力。另外，由於鎵離子 (Ga+ )可被聚焦成極小的離子束半徑，因此在要求高解析度 下聚焦離子束通常為鎵離子束，而鎵離子束轟擊光罩上之 缺陷區域’在轟擊區域附近產生二次（Secondary)離子或電 子，並造成鎵離子被植入（Implanti〇n)石英基材中，而在轟 擊區域逐漸發展造成帶電荷（Charging)現象。其中，由於二 次離子或電子之強度較弱，而降低成像的品質，甚至造成 整個信號衰減，而使得獨立如島狀的圖案（Is〇lated pattern) 或微小之獨立缺陷（Pin Dot)無法成像。另一方面，轟擊區 -------------餐 (請先閱讀背面之注意事項再填寫本頁) 訂---------線· 經濟部智慧財產局員工消費合作社印製Beam), focused ion beam, and atomic force microscope (Atornic Focus Microscopy). Due to the limited resolution of the laser light, the laser burner can remove the opaque film adjacent to the defective area, which will damage the mask pattern. In addition, because laser light transfers a large amount of thermal energy, it will not only dissolve and emit opaque defects, but also cause damage to the quartz near or below the opaque defect, resulting in roughening of the quartz, thereby reducing the transmittance of the quartz and changing the transmitted light. Of phase. Because the focused ion beam has a much smaller focus size than the laser beam, the focused ion beam has a great advantage in terms of repair accuracy and yield. Therefore, the focused ion beam has become a widely used mask repair technique. However, there are still several problems to be overcome in using a focused ion beam for mask repair. First, because the photomask is formed on a substrate such as quartz and quartz is an insulating material, the ion beam charges the surface of the substrate and reduces the ability to use the ion beam to image its results. In addition, since gallium ions (Ga +) can be focused to a very small ion beam radius, the focused ion beam is usually a gallium ion beam under high resolution requirements, and the defect area on the mask bombarded by the gallium ion beam is near the bombardment area. Generate secondary ions or electrons, and cause gallium ions to be implanted in the quartz substrate, and gradually develop in the bombardment area and cause a charging phenomenon. Among them, because the secondary ions or electrons are weak, the quality of imaging is reduced, and even the entire signal is attenuated, which makes it impossible to image such as island-like patterns or tiny independent defects (Pin Dot). . On the other hand, the bombardment zone ------------- Meal (Please read the notes on the back before filling this page) Order --------- Line · Intellectual Property Bureau of the Ministry of Economic Affairs Printed by Employee Consumer Cooperative
494469 五、發明說明（ 經濟部智慧財產局員工消費合作社印製 域所帶電荷會導致键雜工土 ^ 缺…a“ I 束漫射或甚至轉向’而造成圖形 缺陷修補時準確度的損失。 發明目的及概述： 馨於上述習知修補光罩時，所運用之聚焦離 轟擊區域產生帶電荷以及^ 电仃以及_次離子或電子現象，而導致 離子束漫射或甚至轉向，造成透 &成透先率的彳貝失以及邊緣位置 準確度的損失，並降低成像的品質。 因此，本發明的主要目的為提供一種光罩修補之方 法’本發明之方法所運用之雙聚焦離子束可降低轟擊區域 之電荷效應。 本發明的再一目的為提供一種光罩修補之方法，本發 明之方法係❹雙聚焦離子纟，而冑聚焦離子束可減少^ 光率之損失，並提升修補之準確度。 根據以上所述之目的，本發明提供了—種光罩修補之 方法。本發明之方法所運用之雙聚焦離子束包括一負電聚 焦離子束以及一正電聚焦離子束’其中負電聚焦離子束所 採用之負離子電漿可例如為氧離子（0-)，且正電聚焦離子 束採用之正離子源可例如為鎵離子（Ga+)。首先利用負電聚 -------------% (請先閱讀背面之注意事項再填寫本頁) 訂---------線 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 經濟部智慧財產局員工消費合作社印製 494469 A7 _B7 _ 五、發明說明（） 焦離子束進行光罩成像，接著再以正電聚焦離子束進行光 罩修補，或者亦可先以正電聚焦離子束進行光罩成像，再 以負電聚焦離子束進行光罩修補。由於光罩成像與光罩修 補所用之聚焦離子束的電性相反，因此光罩成像時所殘留 之電荷與光罩修補之電荷中和，而降低電荷效應。 圖式簡單說明： 本發明的較佳實施例將於往後之說明文字中輔以下列 圖形做更詳細的闡述，其中： 第1圖為繪示本發明之一較佳實施例之具有雙聚焦離 子束的光罩修補裝置之設備示意圖。 圖號對照說明： 10 光 罩 修 補 裝 置 12 正 電 離 子 源 14 負 電 漿 離 子 源 16 質 量 選 擇 器 18 第 一 靜 電 透 鏡 20 第 一 孔 徑 22 第 二 靜 電 透 鏡 24 第 二 孔 徑 26 光栅操 縱 偏 轉鏡 28 第 三 靜 電 透鏡 30 光 罩 發明詳細說明： 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) A7494469 V. Description of the invention (The charge in the printed area of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs will cause the bond miscellaneous soil to be missing ... a "I beam diffuses or even turns', resulting in a loss of accuracy in the repair of graphic defects. Invention Purpose and summary: In the above-mentioned conventional repairing of the photomask, the focus used from the bombardment area generates a charged and ^ electric 次 and _ sub ionic or electronic phenomenon, which causes the ion beam to diffuse or even turn, causing transmission & This results in a significant loss of accuracy and loss of edge position accuracy, and reduces the quality of imaging. Therefore, the main purpose of the present invention is to provide a method for mask repair. Reducing the charge effect in the bombardment area. Another object of the present invention is to provide a method for repairing a photomask. The method of the present invention is ❹double-focused ion 纟, and the 胄 focused ion beam can reduce the loss of photon and improve the repair. Accuracy. According to the above-mentioned object, the present invention provides a method for repairing a mask. The dual-focus ion beam used by the method of the present invention It includes a negatively-focused ion beam and a positively-focused ion beam. The negative-ion plasma used in the negatively-focused ion beam can be, for example, oxygen ion (0-), and the positive-ion source used in the positively-focused ion beam can be, for example, gallium. Ion (Ga +). First use negative charge polymerization -------------% (Please read the precautions on the back before filling this page) Order --------- Thread paper size Applicable to China National Standard (CNS) A4 (210 x 297 mm) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 494469 A7 _B7 _ V. Description of the invention () Focusing ion beam for photomask imaging, followed by positive focusing Mask repair with ion beam, or mask imaging with positively focused ion beam, and mask repair with negatively focused ion beam. Because mask imaging is opposite to the focused ion beam used for mask repair Therefore, the charge remaining during the imaging of the reticle is neutralized with the charge repaired by the reticle, thereby reducing the charge effect. The diagram is briefly explained: The preferred embodiment of the present invention will be supplemented by the following figures in the following explanatory text. Elaborate, where FIG. 1 is a schematic diagram of a photomask repairing device with a dual-focus ion beam according to a preferred embodiment of the present invention. Drawing number comparison description: 10 photomask repairing device 12 positive ion source 14 negative plasma ion source 16 Quality selector 18 First electrostatic lens 20 First aperture 22 Second electrostatic lens 24 Second aperture 26 Grating manipulation deflection mirror 28 Third electrostatic lens 30 Photomask Detailed description of the invention: This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -------------------- Order --------- line (Please read the precautions on the back before filling this page ) A7
經濟部智慧財產局員工消費合作社印製 由上〇知可知’❹聚焦離子束進行光 會使絡膜圖形之表面帶有電#，而降低光罩成：？， 外，聚焦離子束通常為鎵離 "成像旎力。4 =ΓΛΓ罩修補時，會產生二…或=: 产的Γ子束度射或甚至轉向，造成圖形缺陷修補時準4 度的損失。因此，本發明Μ 補光罩缺r之方… 種利用雙聚焦離子束來修 N / w改善缺陷修補時之電荷效應。 請參照第1圖，JL所洽+ 、斤、、、曰不為本發明之一較佳實施例之 具有雙聚焦離子束的光罩修補 補裝置之設備示意圖。光罩修 補裝置10中，包括提供正 包水禺離子束之正電離子源1 : 以及提供負電聚焦離子束之 員電襞離子源14，其中負電渡 離子源14可提供例如氧離 、 (〇 )等負電所組成之一次離 子束，且正電離子源1 2可提 长供例如鎵離子等負電離子束。 以光罩修補裝置1〇進行 尤+修補時，先調整質量選擇器 16,從正電離子源12所產 ° ^ ^ t 王之正電聚焦離子束與負電漿離 子源14所產生之負電聚笋 …、離子束之間，選擇所需之離子 束，例如先選擇負電聚焦離子 f ^ ^ ^ &卞束進行光罩圖案成像，再選 取正電聚焦離子束進行光罩修 & 首先，利用負電聚焦離子杳 ，宠㈤也 μ A 卞束進行光罩圖案成像。負 聚焦離子束從負電漿離子源 尽14產生並進入質量選擇 --------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 297公釐） 494469 Α7Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. It can be known from the above that focusing the ion beam to light will make the surface of the pleural pattern charged with electricity, and reduce the mask to: In addition, the focused ion beam is usually gallium ion " imaging force. When 4 = ΓΛΓ cover is repaired, two… or =: produced Γ sub-beam radiances or even turns, resulting in a loss of quasi 4 degrees during pattern defect repair. Therefore, the method of the present invention for repairing the photoresistive mask of the invention is to use a dual-focus ion beam to repair N / w to improve the charge effect during defect repair. Please refer to FIG. 1, which is a schematic diagram of a device for repairing a photomask repairing device with a dual-focus ion beam according to the preferred embodiment of the present invention. The photomask repair device 10 includes a positively charged ion source 1 that provides a positively-contained water ion beam and a negatively-focused ionized ion source 14 that provides, for example, oxygen ionization, (〇 ) And a negative ion beam, and the positive ion source 12 can increase the supply of negative ion beams such as gallium ions. When using the photomask repairing device 10 to repair especially +, the mass selector 16 is adjusted first, and the negatively-focused bamboo shoots generated by the positively focused ion beam and negatively plasma ion source 14 produced by the positively-ionized ion source 12 ... And ion beam, select the desired ion beam, for example, first select negatively focused ions f ^ ^ ^ & 卞 beam for mask pattern imaging, and then select positively focused ion beam for mask repair & First, use negative electricity Focusing on the ion beam, the microbeam beam is also used to image the mask pattern. Negatively focused ion beam is generated from negative plasma ion source 14 and enters mass selection -------- Order --------- line (Please read the precautions on the back before filling this page) 297 public %) 494469 Α7
五、發明說明（ :二1=射出’接著透過第一靜電透鏡18後射入第-經第二靜電透鏡22而射入第二孔徑24， (請先閱讀背面之注意事項再填寫本頁) ==縱偏轉鏡26使離子束進入第三靜電透鏡Μ、 後離子束照在光罩3。上’使得光罩圖案能夠正確成像。…、 接著，利用正電離子束進行光罩修補。正電離子束從 正電離子源12產生’以質量選擇器16選取後射入第一靜 電透鏡18’透過第一靜電透鏡18後進入第—孔徑再 電透鏡22而射入第二孔#24,並利用光栅操 :偏=6使離子束進入第三靜電透鏡28，離子束透過 =! 後照在光罩30上，以便修補光罩絡膜上 的圖案缺陷。 然而，亦可進行光罩成像所使用之聚焦離子束為正電 聚焦離子纟’並且光罩修補所使用聚焦離子束為負電聚: 離子束，亦即進行光罩成像與光罩修補料用 < 聚焦料 束的電性不同，就能符合本發明之要长。 由於光罩圖案成像與光罩圖案修補所運用之離子束的 經濟部智慧財產局員工消費合作社印製 電性不同’因此於光罩成像時在定義光罩圖案的鉻 膜表面上之電荷’會被光罩修補所使 尺用之不同電性的電荷 所中和，進而可減少鉻膜表面之雷荇 电何效應。鉻膜表面之電 荷效應經降低後，改善二次離子4雷工+ Α 电于之現象，而提升光 本紙張尺度適用中國國家標準（CNS)A4規格（2】〇 χ 297公釐） A7V. Description of the invention (2: 1 = shoot out, then pass through the first electrostatic lens 18, and then into the second-through the second electrostatic lens 22 and into the second aperture 24, (please read the precautions on the back before filling in this page) == The longitudinal deflection mirror 26 allows the ion beam to enter the third electrostatic lens M, and the rear ion beam is irradiated on the photomask 3. The photomask pattern can be correctly imaged .... Then, the photomask is repaired using the positive ion beam. The ion beam is generated from the positive ion source 12 and 'selected by the mass selector 16 and shot into the first electrostatic lens 18'. After passing through the first electrostatic lens 18, it enters the first aperture re-electric lens 22 and enters the second hole # 24. And use the grating operation: bias = 6 to make the ion beam enter the third electrostatic lens 28, and the ion beam transmits =! And then illuminate on the photomask 30, so as to repair the pattern defect on the photomask mask. However, photomask imaging can also be performed The focused ion beam used is a positively focused ion beam, and the focused ion beam used for photomask repair is negatively charged: the ion beam, which is used for photomask imaging and the photomask repair material, has different electrical properties. Can meet the essentials of the invention. The ion beam used in the imaging and photomask repair of the Ministry of Economic Affairs, Intellectual Property Bureau, and the employee consumer cooperative printed different electrical properties. Therefore, the charge on the surface of the chrome film that defines the photomask pattern during photomask imaging will be masked. Neutralization of different electrical charges used for repairing the ruler can reduce the lightning effect on the surface of the chromium film. After the charge effect on the surface of the chromium film is reduced, the secondary ion 4 lightning + Α is charged to it Phenomenon, and the paper size of the paper is increased to comply with the Chinese National Standard (CNS) A4 specification (2) 0 × 297 mm A7
而增加光 494469 五、發明說明（ 罩鉻膜圖案的成像能力，並提高光罩之透光率 罩修補之準確度。 u 本發明之優點為本發明提供一種光罩 、 補之方法，本 發明之方法在進行光罩圖案修補時，係利用包括正電聚焦 離子束以及負電聚焦離子束之雙聚焦離子|，並採用不同、 電性之聚焦離子束進行光罩鉻膜圖案成像與光罩缺陷修 補。因此，運用本發明可降低鉻膜上之電荷效應，改善離 子束度射或轉向現象，而提升光罩鉻膜圖案之成像能力， 並且避免鎵離子束漫射或轉向，提高光罩缺陷修補之準4 度0 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍内。 --------^---------1 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱）And increase the light 494469 V. Description of the invention (Imaging ability of the cover chrome film pattern and improve the accuracy of the light transmittance cover repair of the photomask. U The advantages of the present invention are to provide a photomask and a method of repair, the present invention In the method of mask pattern repair, the dual-focus ions including the positively focused ion beam and the negatively focused ion beam are used, and a different, electrically focused ion beam is used to perform the mask chromium film pattern imaging and mask defects. Therefore, the application of the present invention can reduce the charge effect on the chromium film, improve the ion beam radiation or turning phenomenon, and improve the imaging ability of the mask chromium film pattern, and avoid the diffusion or turning of the gallium ion beam, and improve the mask defects. The standard of repair is 4 °. As will be understood by those familiar with this technology, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the patent application for the present invention; Equivalent changes or modifications made under the spirit should be included in the scope of patent application below. -------- ^ --------- 1 (Please read the precautions on the back before Write this page) Ministry of Economic Affairs Intellectual Property Office employees consumer cooperatives printed in this paper scale applicable Chinese National Standard (CNS) A4 size (210 X 297 male love)