TW492891B - A scrubbing system and method for point-of-use treatment of effluent gas streams using an aqueous medium and/or gas/liquid contacting article - Google Patents

A scrubbing system and method for point-of-use treatment of effluent gas streams using an aqueous medium and/or gas/liquid contacting article Download PDF

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Publication number
TW492891B
TW492891B TW088122031A TW88122031A TW492891B TW 492891 B TW492891 B TW 492891B TW 088122031 A TW088122031 A TW 088122031A TW 88122031 A TW88122031 A TW 88122031A TW 492891 B TW492891 B TW 492891B
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Taiwan
Prior art keywords
gas
scrubbing
water
liquid
exhaust gas
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TW088122031A
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Chinese (zh)
Inventor
Jose I Arno
Mark Holst
Sam Yee
Joseph D Sweeney
Jeff Lorelli
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Atmi Ecosys Corp
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Priority claimed from US09/212,107 external-priority patent/US6759018B1/en
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Publication of TW492891B publication Critical patent/TW492891B/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34Chemical or biological purification of waste gases
    • B01D53/74General processes for purification of waste gases; Apparatus or devices specially adapted therefor
    • B01D53/77Liquid phase processes
    • B01D53/78Liquid phase processes with gas-liquid contact
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D19/00Degasification of liquids
    • B01D19/02Foam dispersion or prevention
    • B01D19/04Foam dispersion or prevention by addition of chemical substances
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/14Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by absorption
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34Chemical or biological purification of waste gases
    • B01D53/46Removing components of defined structure
    • B01D53/68Halogens or halogen compounds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34Chemical or biological purification of waste gases
    • B01D53/46Removing components of defined structure
    • B01D53/68Halogens or halogen compounds
    • B01D53/70Organic halogen compounds
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23GCREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
    • F23G7/00Incinerators or other apparatus for consuming industrial waste, e.g. chemicals
    • F23G7/06Incinerators or other apparatus for consuming industrial waste, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23MCASINGS, LININGS, WALLS OR DOORS SPECIALLY ADAPTED FOR COMBUSTION CHAMBERS, e.g. FIREBRIDGES; DEVICES FOR DEFLECTING AIR, FLAMES OR COMBUSTION PRODUCTS IN COMBUSTION CHAMBERS; SAFETY ARRANGEMENTS SPECIALLY ADAPTED FOR COMBUSTION APPARATUS; DETAILS OF COMBUSTION CHAMBERS, NOT OTHERWISE PROVIDED FOR
    • F23M5/00Casings; Linings; Walls
    • F23M5/08Cooling thereof; Tube walls
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23GCREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
    • F23G2209/00Specific waste
    • F23G2209/14Gaseous waste or fumes
    • F23G2209/142Halogen gases, e.g. silane
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02CCAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00Capture or disposal of greenhouse gases
    • Y02C20/30Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

Abstract

A system for abating undesired component(s) from a gas stream containing same, such as halocompounds, acid gases, silanes, ammonia, etc., by scrubbing of the effluent gas stream with an aqueous scrubbing medium. Halocompounds, such as fluorine, fluorides, perfluorocarbons, and chlorofluorocarbons, may be scrubbed in the presence of a reducing agent, e.g., sodium thiosulfate, ammonium hydroxide, or potassium iodide. In one embodiment, the scrubbing system includes a first acid gas scrubbing unit operated in cocurrent gas/liquid flow, and a second ""polishing"" unit operated in countercurrent gas/liquid flow, to achieve high removal efficiency with low consumption of water. The scrubbing system may utilize removable insert beds of packing material, packaged in a foraminous containment structure. The abatement system of the invention has particular utility in the treatment of semiconductor manufacturing process effluents.

Description

492891 修正 曰 案號 88122031 五、發明說明(1) 相關申請案之夺互參淹; 本案為美國專利申請案第〇9/〇86,〇33號,中請日1998年 5月28日,申請人jose z· Arn〇名稱「使用點之含氟化合 物減除裝置及方法」之部分連續案,亦為美國專利申請案 第0 8/857, 448號,申請日1 9 9 7年5月16日,申請人J〇seph D. ^Sweeney等人,名稱r導入含微粒狀固體及/或固體形 成氣流至氣體處理系統之防阻塞進氣結構」之部分連續 案。 、 發明背景 發明領域 減::::2發明係有關由含有非期望成份之排出氣流 例如敦、石夕烧、氣態氟化物、㉟氣、氫化 :乂,類型之減除非期望成份之方法;置糸統 相關技術π%牛¥脰製私。 =使用濕滌氣減除半導體廢氣之 / ^ ^ ^ ^ 去除氫化物氣體、酸 4各種應用要求492891 Amendment Case No. 88122231 V. Description of the Invention (1) Mutual participation in related applications; This case is US Patent Application No. 09 / 〇86, 〇33, which was filed on May 28, 1998. Part of the continuation of the name Jose Z. Arn〇, "Fluorine Compound Reduction Apparatus and Method at the Point of Use", is also U.S. Patent Application No. 0 8/857, 448, filed on May 16, 1997. The applicant, Joseph D. ^ Sweeney et al., Named a part of the continuation of the case where the name r introduces particulate-like solids and / or solids to form a gas flow to the gas blocking system's anti-blocking intake structure. BACKGROUND OF THE INVENTION Field of the Invention Minus ::: 2 The invention relates to a method for reducing the type of gas from an exhaust gas stream containing undesired components, such as sintering, asbestos burning, gaseous fluoride, radon, hydrogenation: tritium, unless the component is desired; System-related technology π% cattle ¥ private system. = Use of wet scrubbing gas to reduce semiconductor waste gas / ^ ^ ^ ^ Removal of hydride gas, acid 4 Various application requirements

SiH4(石夕烧),^\及2固胆此點於使用或產生 石夕)或⑽2 (幾基3二物2 ^ ^氫),SiF4(四氟化 沈積)製程特別為1物)之衣& ’例如某些CVIK化學氣相 此專排出氣流處理應 ,民 系統。此種H + w用中業界典^採用多成份式條氣 模組熱氡化:m夕烧以及選擇性之氨於單-減除系統 開模組使用水 ^、SlF4、C0F2及選擇性NH3於另一分 更用水條乳。熱氧化缺點包括⑴消耗高能量及 492891 1RJ8122031 五、發明說明(2) -------- (uj由於氨氧化產生ΝΟχ。此外’冑溫加熱模組可能加速 : 且下^的腐餘,原因在於酸氣(氟及氟化氫)被加熱, \未於熱單元被減除。典型水滌氣模組係位在熱模組正下 游。位在水滌氣單元與熱單元間之濕熱交界區,熱酸氣並 型引起腐蝕。 、/' 其可有效處理 因此迫切需要一種簡單可靠的減除裝置 含前述類型氣體物種之排出氣流。 a特別有關含氟化合物,係作為處理含有該化合物之排出 氣流希望減除的排出氣體物種,纟氟化氣體廣用於晶片製 造,並使用電漿輔助反應而原地產生氟及氟基團。此等高 度反應性物種係產生,以由工具腔室去除矽石以及由晶圓 蝕刻材料例如氮化物、氧化物或多晶矽。最常用之基於碳 之全氟化物種包括Cl 'qF6及(;3匕。三氟化氮(NFs)及六氟 化硫(SF6)亦廣為人使用。 #全氟化化合物(PFC)也屬於最強力溫室效應氣體,全球 %'告可旎性(GWP )比二氧化碳高三至四次羃程度。此外, PFC乃極為穩定的分子,於大氣中壽命達數千年。即使半 導體產業並非PFC排除的最大來源,但產業仍積極尋求可 減少PFC排除以及環保策略。 正在進行中的減少PFC排除程度的研究屬於四大類··最佳 化,使用替代化學品,回收/循環利用技術及減除方法。 製程之最佳化包含調整反應器操作條件而於半導於f造 工具内部達成PFC的轉化。現有半導體製程之非最佳化條 件’結果導致PFC利用率隨使用的特定氣體及製程改變。SiH4 (Shi Xiyao), ^ \ and 2 Gudan This point is the use or production of Shi Xi) or ⑽2 (a few bases 3 two things 2 ^ ^ hydrogen), SiF4 (tetrafluoride deposition) process is particularly 1) Clothing & 'For example, some CVIK chemical vapors are specifically designed for exhaust gas treatment applications, civil systems. This type of H + w is used in the industry code ^ using a multi-component strip gas module for thermal curing: m sintering and selective ammonia in a single-subtraction system opening module uses water ^, SlF4, COF2 and selective NH3 In another point more milk with milk. Disadvantages of thermal oxidation include high energy consumption and 492891 1RJ8122031 V. Description of the invention (2) -------- (uj produces Νχχ due to ammonia oxidation. In addition, the heating temperature of the heating module may be accelerated: The reason is that the acid gas (fluorine and hydrogen fluoride) is heated and is not subtracted from the thermal unit. A typical water scrubber module is located directly downstream of the thermal module. It is located at the wet-heat junction between the water scrubber unit and the thermal unit Zone, hot acid gas causes corrosion. / 'It can be effectively treated, so a simple and reliable removal device containing the aforementioned types of gaseous gas streams is urgently needed. A Particularly related to fluorinated compounds, which are used to treat the compounds containing the compounds. Exhaust gas species that the exhaust gas hopes to remove. Thorium fluoride gas is widely used in wafer manufacturing, and plasma and auxiliary reactions are used to generate fluorine and fluorine groups in place. These highly reactive species are generated by Removal of silica and etching of materials from wafers such as nitrides, oxides or polycrystalline silicon. The most commonly used carbon-based perfluorinated species include Cl'qF6 and (; 3D. Nitrogen trifluoride (NFs) and sulfur hexafluoride (SF6) also Widely used by people. #Perfluorinated compounds (PFC) are also among the most potent greenhouse gasses, and the global% reportability (GWP) is three to four times higher than carbon dioxide. In addition, PFC is an extremely stable molecule. The life span in the atmosphere reaches thousands of years. Even though the semiconductor industry is not the largest source of PFC exclusion, the industry is still actively seeking strategies to reduce PFC exclusion and environmental protection. The ongoing research to reduce the degree of PFC exclusion falls into four categories: · Optimization, Use of alternative chemicals, recovery / recycling technologies, and reduction methods. Optimization of the process involves adjusting reactor operating conditions to achieve PFC conversion within the semiconducting tool. Non-optimized conditions for existing semiconductor processes' As a result, PFC utilization varies with the specific gas and process used.

492891 曰 案號 881?.?Ό31 五、發明說明(3) ' 么-- 一 例如使用四氟化碳及三氟曱烷組合之氧化物蝕刻排名最 低三製私效率為1 5 %。鎢沈積製程報告可利用高達6 8 %三氟 化氣。最佳電漿清潔技術之晚近發展驗證可於半導體製造 工具k供南達99%NF3利用率。 高PFC轉化率無可避免地導致形成有害空氣污染物 (HAP)。为解產物包括大半氟(匕)及四氟化矽(Μ。)氣體以 及較少量氟化氫及羰基敦化物。完全氟化氣體破壞產生比 較輸送給半導體製造工具之初PFC容積更擴大的HAp產率。 例如假定PFC轉換成Fz之化學計量轉換率為,丨升/分鐘492891 Case No. 881?.? Ό31 V. Description of the invention (3) '?-For example, the oxide etching using a combination of carbon tetrafluoride and trifluoromethane has the lowest efficiency of 15%. Tungsten deposition process reports can utilize up to 68% trifluoride gas. The recent development of the best plasma cleaning technology has proven that it can provide Nanda with 99% NF3 utilization in semiconductor manufacturing tools. High PFC conversion rates inevitably lead to the formation of harmful air pollutants (HAP). The decomposition products include semi-fluorine (D) and silicon tetrafluoride (M.) gas, as well as smaller amounts of hydrogen fluoride and carbonyl oxides. Fully fluorinated gas destruction results in a larger HAp yield than the PFC volume initially delivered to the semiconductor manufacturing tool. For example, assuming a stoichiometric conversion rate of PFC to Fz, liters / minute

Upm)流速之ML可能產生I 5升/分鐘(lpm)F2。半導體製程 糸統之四個腔室的合併廢裔洎π台t立> a 至扪口汁&虱/瓜了此產生高達Μ票準升/分鐘 (slm乱軋,結果導致泵送後排出氣流濃度為3%之 次 泵送50 1 pm之壓載N2)。 此種估值隨六敗化PFC (比較評3)加倍,未來可能隨著 30 0毫未日日圓之預期產量增高。此種估計表亞 …未考慮使用m之短期及週期性 : Γ 度較低,二或多個同步化執職週“ 此,此種估計指出PFC問題組合 半V體製造彳呆作之嚴重惡化特性。 除了有害排放系統的完整性外 質促成顯著健康且環境危害也別,化=之4毒七腐餘性 其它齒素更具反應性。於匕;物匹西::且遠比較 積匕及其它氟化有害無機氣體要复^理過私釋放的大容 u 要求利用使用點(POU)減除Upm) ML with a flow rate may produce 15 liters per minute (lpm) F2. The combined waste of the four chambers of the semiconductor process system was set up> a to sap juice & lice / melons, which produced up to M quasi liters per minute (slm rolling, resulting in pumping The exhaust gas concentration is 3%, and the ballast N2 is pumped at 50 1 pm. This valuation doubles with the six-defeated PFC (comparative rating 3), and it may increase in the future with the expected output of 300 yen. This type of estimation table ... doesn't consider the short-term and periodicity of using m: Γ degree is low, two or more synchronizing duty weeks. "This, therefore, indicates that the combination of PFC problem and semi-V-body manufacturing dullness is seriously deteriorating. Characteristics. In addition to the integrity of the harmful emissions system, the quality contributes to significant health and environmental hazards. The other poisons are more reactive. Yu Yu; Wu Pi Xi :: and far more dagger Other fluorinated and harmful inorganic gases must be treated in a private way. Requires the use of point of use (POU) to reduce

492891492891

五、發明說明(4) 技術,俾便減少可能的危險性以及延長工具操作壽命。 士有數種可能的&減除之使用點的替代方法。於高濃度 曰寸,氟與氧、氮及稀有氣體以外的全部元素進行放熱反 ,。結果,F2減除之合理方法係使用自然反應來去除此種 同度活性氣體而無需添加能量至系統。.此種可能方法的主 要挑戰係熱散逸以及形成可接受的副產物。 / 另外可能解決氟減除問題的氟減除技術包括渴及應 技術及熱反應技術。 〜 乾式處理中,氟氣流流經裝有反應性材料之乾床。適當 2化學品將氟轉成無害固體或良性氣體而未產生過量熱 里二此種後述條件於涉及大量氟時特別構成限制因素。 用ί:::Ϊ f1’熱減除單元合併反應性材料及氟於使 用後反應水務氣器。此種後反應水滌氣 二床之去除效率只要大半酸氣之去 低則去除效率常受指。.外為、曲 午I現者/皿度义化減 及構ϋi ώ A 、 卜,熱浪酸的盛裝需要昂貴材料 構k來防止由於溫度增強的腐蝕性攻擊。 於乾式製程技術中,優點為氟氣快 水與氟之主要反應產物為氟化氫、氧及過;y :: *較前述處理去除效率。 要求解決of2副產物技術可能最具吸引力,但 如此業界需要二度消耗水等問題。 Κ 1之用點濕〉條氣哭诂队4 礼σο既減除糸統,其可抑制非5. Description of the invention (4) Technology, which can reduce the possible danger and extend the operating life of the tool. There are several possible alternatives to using & subtract. At high concentrations, fluorine reacts exothermically with all elements except oxygen, nitrogen, and rare gases. As a result, a reasonable method of F2 subtraction is to use natural reactions to remove such isotropically active gases without adding energy to the system. The main challenges of this possible method are heat dissipation and formation of acceptable by-products. / In addition, fluorine reduction technologies that may solve the problem of fluorine reduction include thirst response technology and thermal reaction technology. ~ In a dry process, a stream of fluorine flows through a dry bed containing reactive materials. Appropriate 2 Chemicals convert fluorine to harmless solids or benign gases without generating excessive heat. The conditions described below are particularly limiting factors when large amounts of fluorine are involved. Use ί ::: Ϊ f1 ’heat removal unit to combine reactive materials and fluorine to react with water after use. As long as the removal efficiency of most of the semi-acid gas is low, the removal efficiency of the second bed of the after-reaction water scrubbing gas is often referred to. The external behavior, the appearance of the Qu Wu I / the reduction of the degree and the structure of the A, B, A, B, the heat wave acid dressing requires expensive materials, structure k to prevent corrosive attacks due to temperature increase. In the dry process technology, the advantage is that the main reaction products of fast water and fluorine are hydrogen fluoride, oxygen, and hydrogen; y :: * is more efficient than the previous treatment removal. Requirement to solve the by2 by-product technology may be the most attractive, but so the industry needs to consume water and other issues. The use of KK 1 is a bit wet> The Qi Cry Team 4 et

W326\2d-\91-01\88122031 抑2891 -^^ 素號 881220W A-3__ B H_ 五、發明說明(5) 期望的〇F2形成,於高氟濃度具有可接受的氟去除效率, 且同時可使水用量減至最低。 現在考慮矽烷類作為於氣流處理希望減除的排出氣流之 非期望成份,前述成份典型係藉熱氧化去除。水滌氣去除 · 石夕烧類通常不視為比熱氧化優異,原因在於石夕烧類於水之 /谷解度極低,以及秒烧類與水之反應性極低。先前技術於 某些案例使用化學品如氫氧化鉀及氫氧化鈉用於條氣,但 使用此等氫化物滌氣矽烷類通常需要大量化學添加劑而促 成相當大的操作成本。化學務氣例如述於「透過化學條氣 有效處理排出氣流」,τ· Herman及s· Soden,美國物理 遷 協會會議議事錄1 66,光伏打安全性,克羅拉多州,丹 佛,1 9 8 8年。 除了前 置,其可 化。但此 熱的缺點 致溫度過 另一項 流。矽烷 因此業 在於排出 如此業 及方法且 業界也 迷違成減除石夕 於水滌 等裝置 。相關 高以及 減除石夕 與氨同 界需要 氣流時 界之一 可避免 有一大 氣器最 具有需 辦法也 需要相 烷類時 時存在 一種氣 可有效 大進展 熱氧化 進展係 烷之辦法外 終務氣排出 要點火源及 傾向於具有 當廢氣急冷 遭逢的問題 造成高度減 體減除系統 減除之。 氣流前 燃料或 高度放 要求。 是氨氣 除此等 其當石夕 上可利用某些裝 執行矽烷的熱氧 另外需要電力加 熱性質,結果導 也存在於排出氣 成份特別困難。 烧及氨氣同時存W326 \ 2d- \ 91-01 \ 88122031 2892891-^^ Prime No. 881220W A-3__ B H_ V. Description of the invention (5) The desired 0F2 is formed, which has acceptable fluorine removal efficiency at high fluorine concentration, and at the same time Minimize water usage. Now consider silanes as undesired components of the exhaust gas stream that are desired to be removed in the gas stream treatment. The aforementioned components are typically removed by thermal oxidation. Removal of water and gas · Ishigaki is generally not considered to be superior to specific thermal oxidation because of its extremely low degree of decomposition to water and its low reactivity with water. The prior art uses chemicals such as potassium hydroxide and sodium hydroxide for stripe gas in some cases, but the use of these hydride scrubber silanes often requires a large number of chemical additives and contributes to considerable operating costs. Chemical business gas is described, for example, in "Effective treatment of exhaust gas flow through chemical stripe gas", τ · Herman and s · Soden, Proceedings of the American Physical Migration Association Meeting 1 66, Photovoltaic Safety, Denver, Colorado, 1 9 8 8 years. In addition to the front, it can be changed. However, this thermal disadvantage causes the temperature to pass through another stream. Silane therefore lies in the discharge of such industries and methods, and the industry is also obsessed with eliminating Shi Xi and water purification equipment. Correlation is high and one of the time horizons for reducing the need for air flow between Shixi and ammonia can avoid having an atmosphere that has the most needed methods and the need for phase alkane. When a gas is available, it can effectively advance the thermal oxidation and progress the system. The exhaust gas is ignited by the ignition source and tends to have a highly reduced body reduction system to reduce the problem when the exhaust gas is quenched. Fuel or height discharge requirements before airflow. It is ammonia gas. In addition, it is possible to use some equipment to perform the thermal oxygenation of silane in Shi Xi. In addition, it needs the heating property of electricity. As a result, it is also difficult to exhaust gas components. Burning and ammonia gas coexist

係提供一種有效去除矽烷類之手段 處理的缺點 於周圍或接 近周圍溫度或於大致低Provides a means to effectively remove silanes. Disadvantages are near or near ambient temperature or at approximately low temperatures.

曰 修正 於熱氧化處理採用的溫度條 此需要一種「冷燃燒」方法 除矽烷類。 另一妨礙水滌氣器用於處 些半導體應用中,排出氣體 成,此種泡沫可能對滌氣器 大量累積而完全填補滌氣器 出現此種情況時,泡沫變成 帶離開滌氣器。當泡沫於排 蝕。此外,當泡沫存在於滌 如此泡沫損害循環滌氣液的 咼跨越滌氣器的壓降,因而 理系統的操作造成不良影塑 的上游半導體製造單元的4 水滌氣器用於排出氣流處 於滌氣器之水的礦物含量。 滌氣器的補充水極硬,換言 離子物種。發現當水滌氣器 水中的鈣傾向於沈澱出成為 種問題。其中一種問題是碳 幫浦内部敏感面上。如此造 疋碳酸#5沈積物累積於務氣 越丨條氣器的壓降增兩與择氣 物可能於滌氣器的水管線形 件下有效執行矽燒的去除。因 及裝置用於執行藉低溫氧化減 理排出氣流的問題是起泡。某 當進入水條氣器時造成泡沫形 内部產生不利影響。當泡沫以 内部容積時發生最嚴重問題。 失帶於氣相且實際上可能被攜 氣管表面聚結時可能發生腐 氣器之槽液時可能引起漩渦, 幫浦。最後,起泡活性顯著提 不僅對滌氣器以及排出氣流處 ,同時也對具有壓力敏感特性 作造成不利影響。 理作業上也遭逢另一問題為用 於全球及美國某些位置供應水 之含有高濃度鈣及鎂以及其它 以pH高於約8· 5的水操作時, 碳酸鈣(CaC03)。如此弓I發多 酸鈣黏附於滌氣器關聯的循環 成幫浦受困故障。另〆頊問題 器的填塞面上。如此又造成跨 效率減低。最後,碳酸鈣沈積 成,造成壓降增高,因而水流Modification Temperature bar used in thermal oxidation treatment. This requires a "cold combustion" method to remove silanes. Another obstacle to the use of water scrubbers in some semiconductor applications is the formation of exhaust gas. This type of foam may accumulate in the scrubber and completely fill the scrubber. In this case, the foam turns to leave the scrubber. When the foam is eroded. In addition, when the foam exists in the scrubber, the foam damages the pressure drop across the scrubber of the circulating scrubber liquid, so the operation of the physical system causes a bad effect. Mineral content of the water. The scrubber's make-up water is extremely hard, in other words ionic species. It was found that when the water in the water scrubber tends to precipitate out, calcium becomes a problem. One problem is the sensitive surface inside the carbon pump. In this way, the carbonic acid # 5 deposit accumulates in the service gas, and the pressure drop of the gas heater increases, and the gas selective substance may effectively perform the silicon burning removal under the water line shape of the scrubber. A problem with the device used to perform exhaust gas flow reduction by low temperature oxidation is foaming. The foam-shaped interior has an adverse effect when entering the water strip vent. The most serious problems occur when the foam has an internal volume. When the liquid is lost in the gas phase and may actually be coalesced on the surface of the carrier tube, the septic tank fluid may cause vortexing and pumping. Finally, the significant increase in foaming activity not only adversely affects scrubbers and exhaust airflows, but also has pressure-sensitive characteristics. Another problem encountered in physical operations is that calcium carbonate (CaC03), which is used to supply water in some parts of the world and in the United States, contains high concentrations of calcium and magnesium, and other water that is operated at a pH above about 8.5. In this way, calcium polyacids adhere to the scrubber-associated circulation and become trapped. Another problem is the filling surface of the device. This in turn reduces cross-efficiency. Eventually, calcium carbonate is deposited, causing an increase in pressure

88122031.ptc 第11頁 修正 年 曰 五 ^^88122031 發明說明(7) 速減低。 結ΐ屙f具有更常見特徵的固體沈積問題為於減除系統連 於減^叩感測裝置之管線被固體阻塞。此等管線用來量測 否存:二兀之進氣口壓力,使工廠工程師獲得指示阻塞是 排出幾=減除系統。管線(壓力感測埠口)偶爾被顆粒或被 相關=體阻塞。若固體積聚於感測管線’則 訊造成、咸A 2衣 w值將變不準確,可能產生錯誤的警 风减除糸統關機。 受: = ;氣器入口出現固體沈,,可歸因於接 因此希望ΐ =在有可冷凝氣體。 避免成、,夕或去除於減除系統之固體形成的發生率, i i ΐ i ί ?前述固體沈積問題。 固體去除Ί:::用點濕滌氣減除中’ $求酸氣去除及 氨之製程例如全屬蝕:或產生氯、氟、氟化氫、氯化氫或 系統利用單—i = 、LPCVD、EPI及CVD製程中,務氣 管柱上方乃為噴ϋ 軋體流經此管柱供處理。於填塞 濕潤填塞材料:;;;,係用於使用務氣液(通常為水)之 流),或背向落下水卜於洛下水之同向向下流經管柱(同 在於出氣口(管柱端水1(逆流)。使用逆流設計的優點 方面’以同流方式操作:成最高條氣效果。它 被=的;in:因而限制88122031.ptc Page 11 Revision Year ^ ^ ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ °°° ^^ °°°° ___________________________________________________________________________________________________ (7). The problem of solid deposition with more common features is that the pipeline of the reduction system connected to the reduction sensing device is blocked by solids. These pipelines are used to measure the presence or absence: the inlet pressure of the two towers allows the plant engineer to get an indication of how much the blockage is discharged = minus the system. The pipeline (pressure sensing port) is occasionally blocked by particles or by related bodies. If solids accumulate in the sensing pipeline ’, the signal will cause the A2 value to become inaccurate, which may result in a false alarm and reduce the system shutdown. Affected by: =; solid sink at the inlet of the air vessel, which can be attributed to the connection, so hope ΐ = in the presence of condensable gas. Avoid the incidence of solids formation, removal, or removal in the removal system. I i ΐ i? The aforementioned solid deposition problems. Solids removal ::: Use a point of wet scrubbing gas to reduce the acid acid removal and ammonia processes such as total corrosion: or to produce chlorine, fluorine, hydrogen fluoride, hydrogen chloride or system use single-i =, LPCVD, EPI and In the CVD process, the top of the service gas pipe string passes through the pipe for processing. Wet packing material for packing: ;;;, used for the flow of service gas (usually water), or flowing down through the pipe string in the same direction as the falling water (the same is at the air outlet (pipe string) Duan Shui 1 (counter current). The advantages of using counter current design 'operate in the same way: the highest effect. It is =; in: thus limited

88122031.ptc 第12頁 需要有相當水流迷於:J:::以及有效固體去除 _ 飞延抓知作時通過填塞物。典型 492891 ^號 88122031 年 月 曰 五、發明說明(8) 水流經填塞物之流速超過1 0加侖/分鐘 新鮮水就成本而言不合期望,同時也由 耗大$水,此點於水資源稀少區域特別 共通解決之道係使用循環幫浦將用過的 柱頂端。則可降低新鮮水(補充水)流速 滌氣器對前述氣體物種的滌氣效果。 一種用於提高滌氣效果與降低新鮮補 使用,學注人齊彳。此等材料係經由與辦 卉可頜外氣體分子由於質量轉移梯产^ 氣液。但於此種辦法使用化學劑成:言 全性問題。 同 因此希望提供一種滌氣系統可有 …需使用化學添加劑。也希望提供^ 統’其比較未採用化學添加劑之Α ς 補充水流速需要量顯著降低。^1水 如此本發明之一目的係解 理系統關聯的問題。 叫化先刖 本發明之另一目的係提供一 此等先前技術問題。 本發明之又一目的係提供— 度有效方式採用水滌氣哭。 其它本發明之目的及; 範圍將更完整彰顯。 设文揭示 發明概述 修正 種排出氣 種排出氣 。使用如此高流迷 於處理設備需要消 嚴重。此種問題之 水循環返回填塞管 。但循環利用降低 充水流速的方法係 溶氣體反應,因而' A A %進人水性;條 且可能造成額外安 除固體及酸氣,且 排出氣體之滌氣系 滌氣器,許可新鮮 系統之排出氣體處 體處理系統可克服 體處理系統,以高 及隨附之申請專利88122031.ptc Page 12 There needs to be quite a lot of water fascination with: J ::: and effective solid removal _ Fei Yan grasps through the stuffing during the operation. Typical 492891 ^ No. 8812231, dated 5. Description of the invention (8) The flow rate of water through the stuffing exceeds 10 gallons per minute. Fresh water is not desirable in terms of cost, and it also consumes $$ of water. This is because water resources are scarce A particularly common solution in the area is to use the top of a column that the circulation pump will use. It can reduce the flow rate of fresh water (make-up water). The scrubbing effect of the scrubber on the aforementioned gas species. One is used to improve the scrubbing effect and reduce the use of fresh makeup. These materials are produced by the gas molecules outside the jaw due to the mass transfer ladder ^. However, the use of chemical agents in this method is: a comprehensive issue. It is therefore desirable to provide a scrubbing system with ... chemical additives. It would also be desirable to provide a system that significantly reduces the flow rate of the make-up water compared to chemical additives. ^ 1 Water One of the objectives of the present invention is to solve the problems associated with the system. It is another object of the present invention to provide these prior art problems. Yet another object of the present invention is to provide a highly effective way to use water to clean the air. Other objects and scope of the present invention will be more fully demonstrated. The article reveals the summary of the invention. The use of such a high flow fascinates the need for processing equipment. In this case, the water circulates back to the stuffing pipe. However, the method of recycling and reducing the filling water flow rate is a gas-dissolving reaction, so 'AA% enters the water; strips may cause additional removal of solids and acid gases, and the scrubbers that exhaust gas are allowed to be discharged from the fresh system. Gas body treatment system can overcome body treatment system to high and accompanying patent application

曰 -til^81220^ 年 五、發明說明(9) 本發明将Μ 非期望成份之2 一種由含具有非期望成份之排出氣流減除 〈衣置及方法。 此種非期t:夕士、 碳類、酸氣^匕括氟、矽烷類、氣態氟化物、全氟化 例白扭扣1'、氫化物氣類及_化物氣類。氣體成份之特 <fn、於SlH4(矽烷)、ΝΗ3(氨)、f2 (氟)、HF(氟化 ^本發1 4四氟化矽)及COL(羰基氟化物)。 f置i方_別係關於排出氣體處理系統採用一種濕〉條氣器 :I 法’係用以減除衍生自半導體製造操作之排出氣 流的非期望成份。 、— 4i ^ =万面,本發明係關於一種滌氣系統,用於在含 —,體成份之氣流減除一種氣體成份,此種滌氣系統包含 氣/ /夜^接觸腔室,其包括裝置用以將氣流及滌氣液導入 接觸^至用於其中作氣/液接觸,以及額外具有至少一種 下列特徵: (a) /匕學注^入器,用以導入化學劑接觸氣體成份而於氣/液 接觸中由氣流去除氣體成份,選擇性組合背壓感應裝置, 例如 孔〇’來防止或至少部分減少滌氣系統於化學劑注 入時起泡; (b) —進氣口 ’係設置用以將氣體導引至流過其中之氣 流’俾便_於#在有矽烷時增進由氣流去除矽烷; 一第一氣/液接觸腔室,接受來自第一氣/液接觸腔室 經理後的氣流,以及包括導入裝置用以將第二滌氣液導 入^二接觸腔室而於其中作氣/液接觸,其中第一氣/液接 觸月工至之構造及配置用於氣流與滌氣液的同流流動,以及-Til ^ 81220 ^ year V. Description of the invention (9) The present invention removes 2 of the undesired components of M from the exhaust gas stream with undesired components (clothing and method). Such non-period t: Xi Shi, carbon, acid gas, fluorine, silane, gaseous fluoride, perfluorinated white twist buckle 1 ', hydride gas and _ chemical gas. Specific characteristics of the gas < fn, SlH4 (silane), NH3 (ammonia), f2 (fluorine), HF (fluorinated ^ Benfa 14 tetrasilicon fluoride) and COL (carbonyl fluoride). f 置 i 方 _ Do not use the wet gas exhaust system for the exhaust gas treatment system: Method I is used to reduce the undesired components of the exhaust gas flow derived from the semiconductor manufacturing operation. —— 4i ^ = 10,000 noodles, the present invention relates to a scrubbing system for removing a gaseous component in a gas stream containing-and body components. This scrubbing system includes a gas / night contact chamber, which includes The device is used for directing gas flow and scrubbing liquid into contact for gas / liquid contact therein, and additionally has at least one of the following characteristics: (a) / injector, for introducing a chemical agent into contact with gas components and In the gas / liquid contact, the gas component is removed by the gas flow, and a back pressure sensing device, such as a hole 0 ′, is selectively combined to prevent or at least partially reduce the foaming of the scrubbing system during the injection of the chemical agent; (b) —Air inlet 'system It is provided to guide the gas to the gas flow passing through it. 俾 便 _ 于 # In the presence of silane, the removal of silane by the gas flow is promoted. A first gas / liquid contact chamber receives the first gas / liquid contact chamber manager. The subsequent airflow, and includes an introduction device for introducing the second scrubbing liquid into the second contact chamber for gas / liquid contact therein, wherein the first gas / liquid contact is configured and configured for airflow and scrubbing Gas-liquid co-current flow, and

4928^1 修正 a 五、發明說明(10); ^ 其中第二氣/液接觸腔室之構造及配置呈氣流 _、 液的逆流流動; ~I氣 (d) —消泡劑注入器’用以將一泡沫抑制作用消泡 氣/液接觸之滌氣液,抑制滌氣腔室内部產生泡沫二2 性組合背壓感應裝置,例如一孔口以防止或至少部八、擇 於消泡劑注入之滌氣系統起泡; 刀減少 (e) 抑制碳酸鈣由含鈣滌氣液沈積之裝置’該 選自下列組群包含: W衣置係 (1 ) 一磁化區段,係在滌氣液用於接觸腔室 滌氣液施加磁場; 用來對 (2)調整滌氣液pH而維持PH低於δ· 5之裝置· ⑺-石灰-蘇打灰床,係設置用以在務 室前,使滌氣液流經其中;以及 於接觸腔 (4) 一沈澱器,於滌氣液用於接觸腔室前, 氣液的鈣内容物; I,尤凝滌 (f) 於條氣系統通道抑制固體形成之裝置, 群,係包含使洗滌氣體流經通道、下列組 裝置,以及加熱通道而抑制固體於其中 =广成之 (g) 當矽烷結合氨存在於氣流時,由> a 衣置,以及 置,此種裝置係選自下列組群包含由^減除秒烧之裳 ⑴於氣流導至膝氣系統前加入3氣流 (2)根據(c)項之第二氣/液接觸 置’及 的氣流導至第二氣/液接觸腔室前;=二及於將處理後 它含氧氣體導至來自第-氣/液接阶二/爭的乾空氣或其 從接觸腔室之經處理後的氣4928 ^ 1 Amendment a. V. Description of the invention (10); ^ The structure and configuration of the second gas / liquid contact chamber is a countercurrent flow of gas flow and liquid; ~ I gas (d)-defoamer injector The anti-foaming gas / liquid contacted by a foam suppressing gas / liquid can be used to suppress the foaming inside the scrubbing chamber. The combination of dual-pressure back pressure sensing device, such as an orifice to prevent or at least part eight, choose an antifoaming agent. The injected scrubbing system foams; the knife reduces (e) the device that inhibits the deposition of calcium carbonate from the calcium-containing scrubbing liquid. The group is selected from the group consisting of: W clothing system (1) a magnetized section, which is located in the scrubber The liquid is used for contacting the scrubbing liquid in the chamber to apply a magnetic field. It is used to adjust the pH of the scrubbing liquid to maintain the pH below δ · 5. ⑺-lime-soda ash bed is set in front of the office So that the scrubbing liquid flows through it; and a precipitator in the contact chamber (4), before the scrubbing liquid is used to contact the chamber, the calcium content of the vapor and liquid; I, especially coagulation (f) in the strip system The device for inhibiting the formation of solids in a channel includes a group, which includes a washing gas flowing through the channel, the following groups of devices, and a heating channel to suppress solids Medium = Guangchengzhi (g) When silane-bound ammonia is present in the air stream, from> a garment set, and set, this device is selected from the group consisting of: Add 3 gas streams before the knee gas system (2) The second gas / liquid contact device according to item (c) is directed to the second gas / liquid contact chamber; = two and after it is treated, it contains oxygen gas Lead to dry air from the second gas / liquid junction 2 / continued or processed air from the contact chamber

88122031.ptc88122031.ptc

492891 _ 1---- 案號 881220gj-—年月曰_修 | 五、發明說明(11) 流之裝置。 另一特徵方面係有關一種滌氣系統,包括—進氣結構, 用以將含矽烷成份之氣流導引至滌氣裝置。此特徵方面 中’氣流流經進氣結構,進氣結構包括將氣體導至氣流而 提升滌氣系統之矽烷成份去除之裝置。氣體包含乾淨的乾 ^氣(或任何其它適當含氧氣體)。氣體可以任何適當方式 導至含矽烷氣流,例如於水溢流進氣結構,將氣體通入溢 出的水,或經由浸泡管通入流動中的水、通過浸泡管的孔 口導入、通過多孔浸泡管的導入、滴落通過入口頂或側壁 的孔口,或經由進氣管路侧壁導入。 一具體例之氣體導入裝置 有環形氣體導入通路道,包 氣流通道,以及促進矽烷去 一下進氣口部,包括一附有 壁有一内壁面,其透過進氣 通道接壌,且於溢流時於内 一進氣管,係延伸入氣流通 進氣部及下進氣部之一的下 造及配置可將含矽烷氣體由 另一特定具體例中,提升 納含矽烷氣流之進氣口的流 之中部以及外周部被導入含 體,例如乾淨的乾空氣或其 而藉氧化進行矽烷成份之冷 ,例如包含(i )上進氣口部具 括可透氣壁結合上進氣口部之 除之氣體可流經該通道,(i i ) 内壁之環形溢流液貯器,該内 結構之下進氣口部而與一氣流 壁面產生液體降膜以及(i i i ) 道,且止於氣體導入裝置之上 端;其中該氣體導入裝置之構 其來源導入滌氣裝置。 矽烷成份去除的氣體被導入接 道,其中氣體係於含矽烷氣流 矽烷氣流,因此矽烷減除氣 它含氧氣體,以緊密混合氣流 燃燒去除。492891 _ 1 ---- Case No. 881220gj --- Yueyue Yue _ Xiu | V. Description of the invention (11) Flow device. Another characteristic aspect relates to a scrubbing system, including an air intake structure for directing a gas stream containing a silane component to a scrubbing device. In this characteristic aspect, the airflow flows through the air intake structure, and the air intake structure includes a device for directing the gas to the airflow to enhance the removal of the silane component of the scrubbing system. The gas contains clean, dry gas (or any other suitable oxygen-containing gas). The gas can be directed to the silane-containing gas stream in any suitable manner, such as in a water overflow inlet structure, to pass the gas into the overflowing water, or to the flowing water through the soaking tube, to introduce it through the orifice of the soaking tube, or to soak through the porous The tube is introduced, dripped through the orifice in the top or side wall of the inlet, or introduced through the side wall of the air inlet pipe. A specific example of the gas introduction device includes a ring-shaped gas introduction passage, a gas flow passage, and an air inlet portion for promoting silane to go down. The gas inlet device includes a wall with an inner wall surface, which is connected through the air inlet passage, and when overflowing In the inner air inlet pipe, the bottom structure and configuration extending into one of the airflow inlet part and the lower air inlet part can lift the silane-containing gas from another specific embodiment to improve the air intake of the silane-containing air inlet. The middle part and the outer part of the stream are introduced into the body, such as clean dry air or the silane component is cooled by oxidation. For example, (i) the upper air inlet part has a breathable wall combined with the upper air inlet part. The gas can flow through the channel, (ii) an annular overflow liquid reservoir on the inner wall, a liquid falling film and a (iii) channel on the air inlet wall below the inner structure and an airflow wall, and stop at the gas introduction device Upper end; where the structure of the gas introduction device is introduced into the scrubbing device. The gas from which the silane component is removed is introduced into the channel, and the gas system is in the silane-containing gas stream. Therefore, the silane is degassed. It contains oxygen gas and is removed by combustion in a tightly mixed gas stream.

492891 88122031 曰 五、發明說明(12) 前述配置可與一型濕壁進氣結構組合利用,容後 本發明之又另一特徵方面係有關一種滌氣系統,.以 理包含酸氣成份以及酸氣成份以外之水可滌氣成份之: 氣體。此種滌氣系統包含: 出 一第7滌氣器單元,用以使用水性滌氣液滌氣排出 而去除其酸氣成份’第一滌氣器單元之構造及配置用於: 性滌氣f與排出氣體彼此同流接觸而獲得酸氣成份降低、 以及酸氣以外的水可滌氣成份降低以及水反應久 之排出氣體; &月豆P牛低 第烏氣為單元,用以使用第二水性條氣液條氣排出 氣體而去除殘餘酸氣成份以及酸氣成份以外的水可滌 份以及水f應性成份,m条氣器係、構造及配置=於第 ΐ ί::ί排出氣體彼此逆流接觸獲得酸氣成份及酸 iU 可滌氣成份以及水反應性成份減低之排出 將酸氣成份減少的排出氣 二滌氣器單元之裝置。孔拉由弟i虱益早兀流動至第 前述滌氣系統中,醅备 於第一滌氣器單元降低至八力及水溶性/水反應性成份將 /水反應性成份於水性I至刀別相當於酸氣成份以外水溶性 本發明之又另—特氣液的平衡值。 用以活動性架設於一,係有關一種氣/液接觸物件, 液體至滌氣器容器内容二。°合态,§亥容器具有導引氣體及 置,此種填裝介質總K於其中進行氣/液接觸之裝 。成包含一流體不透性容器結構,例如492891 88122031 Description of the invention (12) The aforementioned configuration can be used in combination with a type of wet-wall air intake structure. Another feature of the present invention is related to a scrubbing system, which contains an acid gas component and acid. Water other than the gas component can clean the gas component: gas. This scrubbing system includes: A seventh scrubber unit is used to remove the acid gas component by using the aqueous scrubber liquid scrubber to remove the acid gas component. The structure and configuration of the first scrubber unit are: Exhaust gas in which the acid gas component is reduced in contact with the exhaust gas by co-current contact, and the water component other than the acid gas is reduced, and the water has been reacted for a long time; Water-based strips and liquid strips expel gas to remove residual acid gas components and water-soluble components other than acid gas components and water f-responsive components, m strip gas system, structure, and configuration = 于 第 ΐ ί :: ί exhaust gas A device for obtaining an acid gas component and an acid iU degassable component and a water-reactive component with a countercurrent contact with each other to discharge and reduce the acid gas component to an exhaust gas scrubber unit. Kung La flows from the younger brother to the first scrubbing system, and is prepared in the first scrubber unit to be reduced to eight strength and water-soluble / water-reactive components. It is not equivalent to water solubility other than acid gas components, but also another aspect of the present invention-special gas-liquid equilibrium value. It is erected on the first, which is related to a gas / liquid contact object, and the liquid to the scrubber container content two. ° Combined state, § The container has a guiding gas and a device, and the filling medium is filled with gas / liquid contact. Into a fluid-tight container structure, such as

88122031.ptc 第17頁 492891 _案號88122031_年月曰 修正_ 五、發明說明(13) 多孔袋及一定質量之填裝元體,其含於此種流體不透性容 器結構内部。 用於此處「多孔」一詞表示穿孔或以其它方式包含開 口、間隙、通孔或其它通道或開放空間,其可對結構提供 容納流體流過其中的能力。多孔結構之開放空間可隨待容 納於其中之填裝元體大小改變。 本發明於一進一步特徵方面係有關一種務氣方法,用以 減除於含有一種氣體成份之氣流之該氣體成份,該滌氣方 法包含將氣流及滌氣液導入氣/液接觸腔室,以及於其中 執行氣/液接觸,其中該方法額外包含下列步驟之至少一 者: (a) 導入一種化學劑,用以接觸氣體成份而於氣/液接觸中 由氣流去除該氣體成份; (b) 於氣流進入接觸腔室前將一種氣體導入氣流,該氣體 當矽烷存在於氣流時可提升由氣流去除矽烷; (c) 排出氣體由接觸腔室流動至一第二氣/液接觸腔室,以 及將一種第二滌氣液導入第二接觸腔室,以於此進行氣/ 液接觸,其中於第一接觸腔室之第一氣/液接觸包含氣流 與滌氣液的同流流動,以及於第二接觸腔室之第二氣/液 接觸,其包含氣流及第二滌氣液逆流流經第二接觸腔室; (d) 將一種消泡劑引至用於該氣/液接觸之滌氣液,抑制接 觸腔室的泡沫產生,選擇性組合感應背壓於滌氣液而抑制 接觸腔室產生泡沫; (e )抑制碳酸鈣由含鈣之滌氣液沈積,包括一步驟選自下88122031.ptc Page 17 492891 _Case No. 8822031_ Year Month Amendment _ V. Description of the invention (13) A porous bag and a packing element of a certain quality are contained inside the fluid-impermeable container structure. As used herein, the term "porous" means perforated or otherwise includes openings, gaps, through-holes, or other channels or open spaces that provide the structure with the ability to hold fluids flowing through it. The open space of the porous structure can vary with the size of the packing elements to be contained therein. In a further characteristic aspect, the present invention relates to a gas service method for removing the gas component from a gas stream containing a gas component, the gas scrubbing method comprising introducing the gas stream and the gas scrubbing liquid into a gas / liquid contact chamber, and A gas / liquid contact is performed therein, wherein the method additionally includes at least one of the following steps: (a) introducing a chemical agent for contacting the gas component and removing the gas component by gas flow in the gas / liquid contact; (b) A gas is introduced into the gas flow before the gas enters the contact chamber, and the gas can be lifted to remove the silane when the silane is present in the gas stream; Introducing a second scrubbing liquid into the second contacting chamber for gas / liquid contact, wherein the first gas / liquid contacting in the first contacting chamber includes co-current flow of airflow and scrubbing liquid; and A second gas / liquid contact of the second contact chamber, which comprises a gas flow and a second scrubbing liquid flowing countercurrently through the second contacting chamber; (d) introducing a defoamer to the polyester for the gas / liquid contact Gas-liquid, inhibit contact The foam generating chamber, sensing the back pressure on selective combination of the scrubbing liquor to suppress foam in contact with the chamber; (e) inhibition of calcium carbonate from the wash liquid deposition, comprising a step selected from

\\326\2d-\91-01\88122031.ptc 第18頁 492891 案號 88122031 年 月 曰 修正 五、發明說明(14) 列組群包含: (1 )於滌氣液用於接觸腔室前加諸一磁場於滌氣液; (2)調整滌氣液pH而維持pH低於8· 5 ; 使滌氣液流經石灰-蘇 沈澱滌氣液之鈣含 包括一步驟選自下列 (3 )於使用滌氣液於接觸腔室前 打灰床;以及 (4 )於使用滌氣液於接觸腔室前 量;以及 (f)抑制於滌氣系統通道形成固體 組群,包含將洗滌氣體流經通道而抑制通道内之固體形 成,以及加熱通道及/或流經其中的氣體而抑制固體於其 中形成。 於另一特徵方面,本發明係關於一種由含有含氟化合物 之排出流減除含氟化合物之方法,包括氣流於還原劑如硫 代硫酸鈉、氫氧化銨、碘化鉀或任何其它適當還原劑存在 下接觸水性介質。 於一進一步方面,本發明係關於一種於含有含氟化合物 之排出流減除含氟化合物之裝置,包括一水滌氣器單元呈 流動關係且接合含有含氟化合物排出流,以及配置用以排 放含氟化合物已經被出空的排出流,將還原劑如硫代硫酸 鈉、氫氧化銨、碘化鉀等注入水滌氣器單元之裝置用以減 除其中之含氟化合物,且比較對應之缺乏此種還原劑注入 系統提供更增強的含氟化合物去除程度。 本發明之又一進一步特徵方面係關於一種半導體製造設 備包含:\\ 326 \ 2d- \ 91-01 \ 88122031.ptc Page 18 492891 Case No. 88122031 Rev. V. Description of the invention (14) The column group contains: (1) Before the scrubbing liquid is used to contact the chamber Apply a magnetic field to the scrubbing liquid; (2) adjust the pH of the scrubbing liquid to maintain the pH below 8.5; passing the scrubbing liquid through the lime-threon precipitation of the scrubbing liquid containing calcium comprising a step selected from the following (3 ) Ash the bed before using the scrubbing solution before contacting the chamber; and (4) measure before using the scrubbing solution before contacting the chamber; and (f) inhibit the formation of solid groups in the scrubbing system channel, including washing gas Flow through the channel to inhibit the formation of solids in the channel, and heat the channel and / or the gas flowing through it to inhibit the formation of solids therein. In another characteristic aspect, the present invention relates to a method for removing fluorinated compounds from an effluent containing fluorinated compounds, comprising flowing a reducing agent such as sodium thiosulfate, ammonium hydroxide, potassium iodide or any other suitable reducing agent Under exposure to aqueous media. In a further aspect, the present invention relates to a device for reducing fluorinated compounds from a fluorinated compound-containing effluent stream, including a water scrubber unit in flow relationship and engaging the fluorinated compound-containing effluent stream, and configured to discharge The fluorinated compound has been evacuated. The device that injects reducing agents such as sodium thiosulfate, ammonium hydroxide, potassium iodide, etc. into the water scrubber unit is used to remove the fluorinated compound, and the corresponding corresponding lack of this A reducing agent injection system provides a greater degree of fluorochemical removal. Yet another further characteristic aspect of the present invention relates to a semiconductor manufacturing apparatus including:

mu 88122031.ptc 第19頁 492891 _案號88122031_年月曰 修正_ 五、發明說明(15) 一半導體製程單元產生含有含氟化合物之排出氣流;以 及 一減除排出氣流之含氟化合物之裝置包含: 一水滌氣器單元,係用於氣/液接觸; 將含氟化合物排出氣流導入水滌氣器單元之裝置; 由水滌氣器單元排放含氟化合物減少之排出氣流之裝 置;以及 一還原劑來源,其工作式耦合水滌氣單元且配置成於其 操作期間將還原劑導入水滌氣單元。 此種設備之半導體製程單元可屬於任何適當類型,例如 電漿反應腔室,化學氣相沈積腔室、蒸發器、磊晶生長腔 室或钱刻工具。 本發明之另一方面係有關一種排出氣流減除滌氣系統, 包含一水滌氣器,用以滌氣排出氣體,該系統之構造及配 置可進行至少一種選自下列組群之功能,該組群包含: (1) 水滌氣排出氣體,其可添加或注入化學還原劑; (2) 水滌氣含矽烷排出氣體,其中乾淨乾空氣被導入排 出氣體或滌氣液; (3) 利用二階段式條氣系統,該系統包括一平衡滌氣管 柱及一拋光質量移轉管柱,來減少所需補充滌氣水,同時 比較單一階段滌氣單元維持或提高滌氣效率; (4) 於導引至拋光質量移轉滌氣管柱前,添加乾淨乾空 氣至由(3)平衡滌氣管柱排放的排出氣體,俾便當矽烷連 同氨存在於排出氣流時減除矽烷;mu 88122031.ptc page 19 492891 _ case number 88122031_ year month revision _ V. Description of the invention (15) A semiconductor process unit generates an exhaust gas stream containing fluorine compounds; and a device for reducing the fluorine compounds contained in exhaust gas streams Contains: a water scrubber unit for gas / liquid contact; a device for directing a fluorinated compound exhaust gas stream into the water scrubber unit; a water scrubber unit that emits a reduced exhaust gas stream containing fluorine compounds; and A source of reducing agent that is operatively coupled to the water scrubbing unit and is configured to introduce the reducing agent into the water scrubbing unit during its operation. The semiconductor process unit of such equipment may be of any suitable type, such as a plasma reaction chamber, a chemical vapor deposition chamber, an evaporator, an epitaxial growth chamber, or a money engraving tool. Another aspect of the present invention relates to an exhaust air flow reduction scrubbing system including a water scrubber for scrubbing exhaust gas. The structure and configuration of the system can perform at least one function selected from the group consisting of: The group contains: (1) water-exhaust gas, which can be added or injected with a chemical reducing agent; (2) water-exhaust gas, including silane-containing exhaust gas, in which clean and dry air is introduced into the exhaust gas or liquid-gas; (3) utilization A two-stage stripping system, which includes a balanced scrubbing column and a polishing mass transfer string to reduce the need for supplementary scrubbing water, while comparing a single-stage scrubbing unit to maintain or increase scrubbing efficiency; (4) Before leading to the polishing quality transfer polyester pipe column, add clean dry air to the exhaust gas discharged from the (3) balanced polyester pipe column, and then remove the silane when the silane and ammonia are present in the exhaust gas stream;

88122031.ptc 第20頁 47厶〇7丄 MJt 881 五、發明說明(16) ------^2一^_a_修正—_ (5 )於(3 )之二階p# 其包含填裂於抛光:2 =氣,統利用一含多孔容器結構, ⑹滌氣系統之排出里夕轉官柱作為嵌入物之床; ⑺藉化學消泡❹/^接觸0F2還原劑; 統起泡; 次I氣液流孔口約束,控制氣體系 (8 )錯下列 一 ^ ^ Μ κι- (a Λ ^ ^ 者防止碳酸鈣積聚於滌氣系統; U)滌虱用補充水之磁化; (b)控制補充水pH ; ⑷^ t之蘇打灰〜石灰軟化;以及 充水之沈澱或絮凝處理· (9)抑制滌氣系綠+ a / 1 ’ Π 阻突 「/、、、先中匕括光電螺線傳感線之光電螺線埠 @ i由1卩!方式係經由將洗務氣流通過光電螺線傳感 Ίί螺線傳感線可選擇性被加熱;以及 Q i U J加埶用於ί $么 ^广队 .....*、乳糸統的進氣結構來將排出氣體導入滌 氣區#又。 本^ j之又其匕方面係有關滌氣系統之進氣結構,由含 有特定氣體成份之氣流減除特定氣體成份之去除裝置及方 法以及特疋滌軋系統特點、技術、次系統及辦法。 其匕本發明之特徵方面,特點及具體例更完整顯示如 後’由後文揭示及隨附之申請專利範圍將更完整彰顯。 發明細說明及缝^佳具體例 下列美國專利申請案之揭示整體併述於此以供參考·· •美國專利申請案第0 9/0 8 6, 〇33號,申請日1 998年5月 28日’中請人j〇se I· Arno名稱「使用點之含氟化合物減88122031.ptc Page 20 47 厶 〇7 丄 MJt 881 V. Description of the invention (16) ------ ^ 2 一 ^ _a_correction_ (5) in (3) the second-order p # which contains filling For polishing: 2 = gas, the system uses a porous container structure, ⑹ the exhaust gas transfer system column as the bed of the insert; ⑺ by chemical defoaming ^ / ^ contact 0F2 reducing agent; blistering; times I. Gas-liquid flow orifice restriction, control gas system (8): ^ ^ Μ κι- (a Λ ^ ^ to prevent calcium carbonate from accumulating in the scrubbing system; U) magnetization of makeup water for lice; (b) Control the pH of make-up water; 苏 ^ t of soda ash ~ lime softening; and water-filled precipitation or flocculation treatment. (9) Inhibition of scrubbing green + a / 1 'Π The photoelectric solenoid port of the spiral sensor line @ i 由 1 卩! Is selectively heated by passing the washing air flow through the photoelectric spiral sensor. The spiral sensor line can be selectively heated; and $ 么 ^ 广 队 ..... *, the air intake structure of the milk system introduces the exhaust gas into the scrubbing zone #. This aspect is related to the intake structure of the scrubbing system. Specific gas composition Device and method for removing specific gas components by air flow, and characteristics, technology, sub-systems and methods of special polyester polyester rolling system. The features, characteristics, and specific examples of the invention are more fully shown below. The scope of the attached patent will be more fully displayed. Detailed description of the invention and specific examples of disclosure The following disclosure of the U.S. patent application as a whole and described here for reference ... U.S. Patent Application No. 9/0 8 6, 〇 No. 33, application date: May 28, 998, "Invited person jose I · Arno name" Fluorine compounds at the point of use minus

第21頁 492891Page 492891

五、發明說明(17) 除裝置及方法」; •美國專利申請案第08/857, 448號,申請日1 997年^月 16曰,中請人Joseph D· Sweeney等人,名稱「導入含找 粒狀固體及/或固體形成氣流至氣體處理系統之防阻塞進 氣結構」; •美國專利申請案第08/778, 38 6號,申請日1 996车19曰 31曰,申請人…等人,名稱「導入液固= 之流體處理系統之防阻塞進入結構」。 本發明包含一種排出流減除系統,其例如 相容的具有下列結構特徵方面: a夕種 (1 )水〉條氣排出氣流’含或未合4風 入化學劑如氮氧化钾或氮氧\未納匕子追加(例如添加或注 (2 )務氣含矽烷之排出氣流, 出氣流,例如於單一、雙重或三、重? 由將乾淨乾空氣通入覆蓋液w /乾工职^ /主入,或經 通入尖端杯或多孔嵌入物的;入結構的液體内,例如 擇性藉一種配置控制乾淨乾办,六,或通入滌氣液内,選 流量控制器產生一控制信號ς =奴速,該配置涉及由質量 統,故選擇性當同流存在有二:矽^排出氣流流入滌氣系 氣流流經其中的流道例如進氣5下藉加熱排出氣流或排出 (3) 利用一二階梯式滌氣系,’ 一「拋光」質量移轉管柱,來、'、匕括一平衡滌氣管柱及 單元要求的補充滌氣水,同昉=少相對於單一階梯式滌氣 (4) 於由(3)之平衡滌氣管:維持或提高滌氣效率; 排放的排出氣流被導入拋光V. Description of the invention (17) Device and method for removal "; • U.S. Patent Application No. 08/857, 448, date of application, 1/997, 1997; Joseph D. Sweeney, et al. Look for granular solids and / or anti-blocking air intake structures that form a gas flow to the gas processing system "; • US Patent Application No. 08/778, 38 6, application date 1 996, 19, 31, applicants ... etc. Person, with the name "Introduce liquid-solid = anti-blocking entry structure of fluid handling system". The present invention includes an exhaust flow reduction system, which is compatible, for example, with the following structural features: a) species (1) water> stripe exhaust gas stream 'with or without 4 wind-in chemicals such as potassium nitrate or nitrogen oxide \ Not satisfied with the dagger addition (such as adding or note (2) business gas containing silane-containing exhaust air flow, such as in single, double or triple, heavy? By passing clean dry air into the cover fluid w / dry jobs ^ / Mainly, or through the tip cup or porous insert; into the structured liquid, such as selective control of a clean operation by a configuration, six, or into the scrubbing liquid, the flow controller is selected to generate a control signal ς = slave speed. This configuration involves quality control, so there are two options when co-current exists: silicon ^ exhaust air flows into the scrubber-type air flow through the flow path, such as air intake 5 by heating the exhaust air or exhaust (3 ) Utilizing one or two stepped scrubbing systems, a “polished” mass transfer pipe string is used to balance a scrubber pipe string and the supplementary scrubber water required by the unit. Purification (4) in the balance scrubbing duct from (3): maintaining or improving the scrubbing Efficiency; exhaust gas stream is introduced into the discharge polished

88122031.ptc 492891 88122Q3! Λ_3 曰 修正 五、發明說明(18) =量移轉滌氣管柱前’添加乾淨乾空氣至該排出氣流,來 :士:當與氨氣並存於排出氣流時的矽烷,選擇性無需加敎 徘出氣流, μ (5)於(3)之二階段式滌氣系統利用—管線’其含有 作為拋光質置移轉管柱之嵌入物結構之床; 、衣 (6 )於滌氣系統使排出氣流接觸0F2還原劑; (7) 於滌氣系統藉化學(消泡劑)及/ ^ 法控制起泡; ^化子、札、、-口構)辦 (8) 藉下列一或多者防止碳酸鈣積聚於滌氣系統; (a )務氣用補充水之磁化; (b)控制補充水pH ; (c )補充水之蘇打灰-石灰軟化;以及 (d)補充水之沈澱或絮凝處理; 藉7氮防或止/它乳先糸/t之光電螺線痒口之光電螺線阻塞,係 其中光電螺線僂=^體之洗滌氣流通過光電螺線傳感線, H!感線可被選擇性加熱;以及 、丄u ;加熱用於、狄与 氣區段。 、α軋系統的進氣結構來將排出氣體導入滌 本發明將更^>敕从 同具體例可採^ 21 =於隨後之揭示,其中於本發明之不 種組合及變化。 特徵以及本發明之多種特徵方面之多 一具體例中,太名又 出氣流的水梅氣處^ :利,化學注人來提升含*Ub合物排 半導體製造操作,A含氟化合物的減除。本發明可用於 、 /、中產生含有含氟化合物排出氣流且要88122031.ptc 492891 88122Q3! Λ_3 Modification V. Description of the invention (18) = Before the amount of polyester pipe column is transferred, add clean and dry air to the exhaust gas stream. Come: ±: Silane when coexisting with ammonia gas in the exhaust gas stream, The selectivity does not need to increase the air flow, μ (5) is used in (3) the two-stage scrubbing system-pipeline 'the bed containing the embedded structure used as a polished transfer pipe string; and clothing (6) Make the exhaust gas stream contact the 0F2 reducing agent in the scrubbing system; (7) Control the foaming by chemical (defoamer) and / ^ methods in the scrubbing system; (8) One or more of the following prevent calcium carbonate from accumulating in the scrubbing system; (a) magnetization of make-up water for business use; (b) control of the pH of the make-up water; (c) soda ash-lime softening of the make-up water; and (d) supplementation Precipitation or flocculation treatment of water; 7 nitrogen to prevent or stop / the photo-electric spiral of the photo-spiral itch / t is blocked by the photo-spiral of the photoelectric spiral, where the photo-spiral 偻 = ^ body ’s washing air flow is sensed by the photo-spiral Line, H! Sense line can be selectively heated; and 丄 u; heating is used in the Di and Qi sections. The air intake structure of the α-rolling system is used to introduce exhaust gas into the polyester. The present invention will be more detailed from the same specific example. 21 = It will be disclosed later, among which are various combinations and changes in the present invention. Features and many specific aspects of the present invention. In a specific example, the water and plum blossoms that are too famous and have an air stream ^: Li, chemical injection to improve semiconductor manufacturing operations containing * Ub compounds, A reduction of fluorine compounds except. The invention can be used to produce exhaust gas containing fluorine compounds in

88122031.ptc 第23頁 492891 案號 88122031 年月曰 修正 五、發明說明(19) 求處理後放流或處理而 與標準水滌氣技術無 相反,本發明經由提升 操作中非期望副產物的 雖然本發明於後文主 流的氟氣,但本發明方 體以及其它強力氧化氣 體。 此外,雖然本發明於 但本發明之滌氣器裝置 用,例如作為前熱減除 理單元合併使用。 本發明中,還原劑用 效率,以及抑制二敗化 或溶液注入,利用對空 含任何於水性條氣環境 適當還原劑。較佳還原 及蛾化鉀。最佳還原劑 鹼、易得且廉價的化合 本發明之減除接受處 置包括監視含有含氟化 存在以及響應於此,調 置。88122031.ptc Page 23 492891 Case No. 88122031 Amendment V. Description of the invention (19) It is required to release or treat after treatment, which is not contrary to the standard water scrubbing technology. Invented in the mainstream fluorine gas, but the cube and other powerful oxidizing gas of the present invention. In addition, although the present invention is used, the scrubber device of the present invention is used, for example, in combination as a front heat reducing and removing unit. In the present invention, the efficiency of the reducing agent, as well as suppressing dimerization or solution injection, utilizes a suitable reducing agent in the air containing any aqueous environment. Preferably reduced and mothized. Optimal reducing agent Alkali, readily available and inexpensive combination The subtraction acception of the present invention includes monitoring for the presence of fluorinated compounds and adjusting in response thereto.

此種裝置例如包括pH 符合適用的環保排出流標準。 法去除高濃度氟及其它含氟化合物 水滌氣器系統性能且減少此種系統 形成而達成實質技術改良。 要係應用於減除含有氟氣之排出氣 法及裝置也可用於減除其它含氟氣 體(例如三氟化氣,氯氣等)及液 後文係以孤立滌氣單元舉例說明, 及方法可合併其它方法及裝置使 及後熱減除水務氣器管柱而與熱處 來提高氟或其它 氧(OF2)的生成。 氣氧化為穩定的 下可有效增進含 劑例如包括硫代 為硫代硫酸鈉此 物。 理的排出氣流中 合物排出氣流之 整還原劑導入水 含氟化合物之減除 還原劑可呈固體 還原劑。還原劑包 氟化合物之去除之 硫酸鈉、氫氧化銨 乃一種無毒、非強 之含氟化合物之裝 含氟化合物濃度或 滌氣器單元之裝 監視裝置用以監視接受處理的排出Such devices include, for example, pH in compliance with applicable environmentally friendly effluent standards. The method can remove high-concentration fluorine and other fluorine-containing compounds and improve the performance of the water scrubber system and reduce the formation of such systems. It should be applied to the method and device for reducing the exhaust gas containing fluorine gas. It can also be used to remove other fluorine-containing gas (such as trifluoride gas, chlorine gas, etc.). Combining other methods and devices to heat and remove the water heater gas pipe column and heat afterwards to increase the generation of fluorine or other oxygen (OF2). Gas oxidative stabilization is effective to enhance ingredients such as thiosulfate and sodium thiosulfate. The natural exhaust gas stream of the compound exhaust gas stream, the entire reducing agent is introduced into the water, the reduction of fluorinated compounds, and the reducing agent can be a solid reducing agent. Reducing agent package: Sodium sulfate and ammonium hydroxide for the removal of fluorine compounds. It is a non-toxic, non-strong, fluorine-containing compound container.

88122031.ptc 第24頁 492891 一案號 8812203] _牛 月 日 五、發明說明(20) 氣流之pH,以及響應於此,以該感測得之pH值 速率及數量導入還原劑。 關聯的 另外,此種裝置包括廢氣監視器用以決定排出$、 氟化合物含量,以及響應於此易由感測得之含=流之含 度決定之數量及速率將還原劑導入排出氣流。 合物濃 一般而言,監視裝置監視含有含氟化合物排 亂化合物濃度以及響應於此調整導入水虱凌之含 劑的裝!可有寬廣變化,用於將排出氣流之;氟:之還原 減除中還原劑的添加量降至最低。 合物的 本發明可使用可促進氟減除(於無化學劑存 之還原劑達成嶽合物如氣之有效減:相:於 、,隹持可接受的二氟化氧濃度。 、同時 排ΓΛ气舉例說明於說及四氟化石夕減除過程中用來%明 排出虱流及溫度侧繪之裝置。配備 用未说明 動化氣體輸送歧管用來產生哭以t的自 矽混合物。水滌氣哭 卞乱π之虱及贶或四氟化 氣器單元1 1 〇之排放。/ 用於排出氣流處理。於水滌 為了減少^逆流流動抛光單元m。 布以鎳或其它防蝕材屙蝕,入口的金屬部分130可塗 含氧氣體可導入入口來.此外,或可交替地,空氣或其它 於入口之空氣或其它襄雕助減除氣流的非期望成份。此種 並視本發明之特定用=添加可以通氣或非通氣方式, 制於水滌氣器單期望進行。 衣程,例如電漿捭 的氧體可衍生自任何適當上游 曰、化學氣相沈積(PECVD)製程。此一 第25頁 492891 月 曰 修正 88122η^ι 五、發明說明(21) 製程中,氨(N H3 )及石々、ς 、μ i 腔室内部,俾便=曰γΓ 4) 積階段期間流入反應器 ^ ^ 更於曰曰圓面上形成氮化矽層(业型ASi Ν )。 r㈣階段期間,三氣化氛(…流入腔室、内 f至f:刻去除沈積物。三氟化氮可於反應腔室(怜於反 蟲—2 成為氟(F2)及氮(乂)。然後 亂由反iC w I至壁蝕刻沈積物而「清潔 未物為氟、四氟化砂(siF4)、氟化氫(hf)、 i π氮以及可能較少量其它化合物例如幾基氟 矽浐及丨气而主此於沈積步驟期間’滌氣器系統暴露於 潔㈣期間水I氣器系統暴露於氟,四 弗t七對_太ί、二鼠化氮、羰基氟化物及其它物種。 ,但非限於金屬㈣,氧化物。多 重、’物蝕刻,低壓化學氣相沈積(LPCVD),磊晶 石夕(EPI)’鎢化學氣相沈積_,鎢银刻,…: ,屋化學亂相沈積(APCVD)及介電化學氣相沈積(dcvd) 等。 ? IJ :部氣體及水溫度係於選定點量㈣,俾便監視減 二t釭ό’处理。減除系統可藉任何適當裝置監視,例如含 電腦1 4 0之製程監視與控制系統。 存^於I氣态廢氣中的紅外線活性氣相物種被抽吸至 FTIR分光光度計,例如MIDAC I-20 0 0 FTIR分光光度計(市 面上得自MIDAC公司)作定量分析。f亥單元配備有徑長 的鎳塗層乳體槽150,其帶有ZnSe窗以及液態氮冷卻的耽丁 88122031.ptc 第26頁 曰 於適當監視設定值,例如以解析度 •里未σ又疋為16次掃描涵蓋60 0至42 0 0厘米-1之井罐區。 定期例如每30秒收隼八上4十上 !木之先邊& 物種性質及漠度= 連續即時的有關感興趣 氣化矽及氣化氫濃戶上;刀析可於原位使用已知四 用MIDAC公司出版辰的度定校曰準/析/義達成。二氣化氧吸光率使 氟氣於連續模使用%先;晋存庫被轉成濃度。 感測器槽(純空氣見二“槽160如氟特純空氣氣體 化學⑽感測2續模式分析。此種光 二為?么和條件下原位監視氣 連續分析,滌氣器廢氣之:::圍(3 ppm乱氣)以内的 稀釋。人併产祐道Λ 机速係以經過計量的氮氣流 口 瓜 ^ A配備有氟感測器之混合腔室〗7〇。臣t 氣㈠度資料以3°秒間隔載入電二 由對已Α辰度杈準感測器可達成準確定量結果。 至於使用pH計來控制化學注入速率的 氧化(REDOX)電位電極可用於此項目的。 i原7 不似PHtK其適合配置成基於存在的酸濃度開始添加還 原劑),氧化還原電極可配置成當槽内水溶液之離子電 達指定程度時開始注入還原齊卜藉氧化還原電位電 所得超過pH控制系統的改良係有關下述事f,基於 子電位來注入還原劑乃較pH媒介注入為更直接的平 化學反應的手段。 收 圖2為水條氣器210之進一步細節說明,水條氣器21〇屬 88122031.ptc 第27頁 492891 月 修正 曰 案號8812?, 五、發明說明(23) :類似圖1系統顯示的該型水滌氣器單元n〇 用水及污染的氣流之垂直同流流動操作。,軋器使 水於高表面積填塞區22。交互作用時人:物種當與 至水貯器或水槽230,所得務氣器氣 體降 至鼓風機的豎管送出滌氣器之 1轧通過連結 包括新鮮水或補充水流入系、統,水排流動力學 的水連續循環利用。滌氣器的效能可使用“於;^曹230 ;流=光床240提升。進氣口250鍍鎳而減;二;的 ί貝,且保濩入口不受腐蝕性攻擊。 U版/尤 滌氣器内部的氣體溫度及水、、w 量測。 叹尺級係於圖2標示的9個選定點 至於使用化學注入促進氣氣的減除 作為副產物之替代之道,可設置 $ =化乳 出以下反應及完成之裝置。 仏~電子至水洛液俾便導 F2 + e_ = 2 F-及 0F2 + 2HH4e、2F- + H20 雖然任何適當裝置皆可用於/ Φ Κ ^ Λ ^ Ώ , 、七、而電子,但較佳配置利用 冤極肷入滌軋為槽以及連結至 加化學品的需求外,電子的吝:卜::直流電源。除了免除添 ,Ζ,相ω ,逼子的產生僅需使用小量直流電力。 至於另-才目關類型配置’其可免除化學注入需求 增進氟氣的減除以及抑制二蠢& 電子可使用保護性陽極例如 =$成為副產物,溶液之 陽朽、夺、力於私气如^以 孟屬網或金屬板製成的保護性 :極’“於一水槽供給,金屬(μ)將透過下述反應分 88122031. ntr; 第28頁 492891 案號 8812203] 五、發明說明(24) M = M2+ + 2e 工作中,滌氣器 的形成鈍化層。不 無需外部電源。反 池或一次電池原理 需要的電子。 水槽水溶液酸度可防 似前述電解池具體例 而保護性陽極配置的 ,據此保護性金屬的 止於金屬面非期望 ,使用保護性陽極 操作係基於伏打電 自發氧化反應產生 另本發,具體例係有關於水滌氣器去除二氣化氧而無 而1 ^化子還原剤。於一特徵方面,可以適當輻射照射排 出k 質來執行二氟化氧的光分解’例如使用於365毫微 紫外光(此波長出現二氣化氧之氣相光分解,於 至/皿之里子產率為!;參考Gmelin手冊,F Suppl.第4期第 45頁)。此種輕射曝光可於滌氣器通風口或滌氣器單元主 填塞床實施。 至於另二去除水條氣器之二氟化氧而未添加化學還原劑 之替代之逼’務氣器通風流加入至適當溫度例如2 5 〇 - 2 7 〇 C ° 一氣化氧於此溫度透過均質單核反應分解(參考 Gmelin 手冊,F Suppl·第4 期第43 頁)。 至於去除水滌氣器的二氟化氧之又另一替代之道,反應 物種被導至條氣液而反應性減除二氟化氧。用於此項目的 可能有用的化學反應物包含但非限於人丨c ^,腦3,aS2 〇3,88122031.ptc, page 24, 492891, case number 8812203] _ New Year's Day V. Description of the invention (20) The pH of the gas stream, and in response to this, the reducing agent is introduced with the pH value and the amount measured. Related In addition, such a device includes an exhaust gas monitor to determine the exhaust gas, fluorine compound content, and to introduce reducing agent into the exhaust gas stream in response to the amount and rate easily determined by the content of the sensed content of the flow. Concentration of compounds In general, the monitoring device monitors the concentration of compounds containing fluorinated compounds, and adjusts the package containing the water lice in response to this! It can be widely used to reduce the amount of reducing agent in the reduction of the exhaust gas flow; the reduction of fluorine: reduction. The present invention of the compounds can be used to promote fluorine reduction (reducing agent in the absence of chemical agents to achieve the effective reduction of gas compounds such as gas: phase: in, and, to support an acceptable concentration of oxygen difluoride. Simultaneous discharge ΓΛ gas is an example of a device used to eliminate lice flow and temperature profile during the process of reducing tetrafluorite. It is equipped with an unexplained dynamic gas delivery manifold to produce a self-silicon mixture that cries at t. Water Disperse gas weeping and 之 or 贶 or tetrafluoride gas unit 1 1 0 emissions. / Used for exhaust air treatment. In water to reduce ^ countercurrent flow polishing unit m. Cloth with nickel or other anti-corrosion materials 屙The metal portion 130 of the inlet can be coated with oxygen-containing gas and can be introduced into the inlet. In addition, or alternatively, air or other air at the inlet or other carvings can help reduce the undesirable components of the airflow. Specific use = Addition can be aerated or non-ventilated, made in water scrubbers. Desirable processes, such as plasma oxygen, can be derived from any suitable upstream, chemical vapor deposition (PECVD) process. This January 25, 492891正 88122η ^ ι V. Description of the invention (21) In the manufacturing process, ammonia (N H3) and the inside of the chamber of 々, i, μ i, 俾 便 = γΓ 4) flows into the reactor during the accumulation phase ^ ^ more A silicon nitride layer (type ASi N) is formed on the round surface. During the r㈣ stage, the three-gasification atmosphere (... flows into the chamber, and f to f: removes the sediment. Nitrogen trifluoride can be used in the reaction chamber (for the anti-worm-2 to become fluorine (F2) and nitrogen (乂)). .Then the anti-iC w I to the wall etched deposits and "the cleaned matter is fluorine, tetrafluoride sand (siF4), hydrogen fluoride (hf), i π nitrogen and possibly a smaller amount of other compounds such as a few fluorosilicon During the deposition step, the scrubber system was exposed to water during the cleaning process. The water scrubber system was exposed to fluorine, four pairs of nitrogen, dinitrogen, carbonyl fluoride, and other species. , But not limited to metal hafnium, oxides. Multiple, 'material etching, low pressure chemical vapor deposition (LPCVD), epitaxial lithography (EPI)' tungsten chemical vapor deposition_, tungsten and silver engraving, ... Phase deposition (APCVD) and dielectric electrochemical vapor deposition (dcvd), etc. • IJ: the gas and water temperature are measured at selected points, and then the monitoring is reduced by two times. The reduction system can be borrowed by any appropriate Device monitoring, such as a process monitoring and control system with a computer 140. Infrared active gaseous substances stored in I gaseous exhaust gas This kind is sucked into FTIR spectrophotometer, such as MIDAC I-20 0 0 FTIR spectrophotometer (commercially available from MIDAC company) for quantitative analysis. The f Hai unit is equipped with a nickel-coated milk tank 150 with a long diameter. Tandin 88220231.ptc with ZnSe window and liquid nitrogen cooling. Page 26 means monitoring the set value appropriately, for example, with a resolution of • Levi σ and 疋 for 16 scans covering wells ranging from 60 to 4200 cm-1. The tank farm. Periodically, for example, close to 80 to 40 on every 30 seconds! The front of the tree &species; desertification = continuous and real-time information on interested silicon gas and hydrogen gas concentration; knife analysis can be performed in the original The calibration was achieved using a known four-phase calibration method published by MIDAC Corporation. The absorbance of the two-gas oxygen makes the fluorine gas used in the continuous mode% first; the Jincun library is converted to the concentration. Sensor slot (For pure air, see the second "Slot 160, such as fluoro-pure air gas chemical radon sensing 2 continued mode analysis. What kind of light is this? Under the conditions and continuous monitoring of in-situ monitoring gas, the scrubber exhaust gas ::: Wai (3 ppm disorder gas). It is diluted by humans. The speed of the machine is measured by a nitrogen flow meter. A is equipped with a fluorine sensor. Mixing chamber of the instrument: 7〇. The temperature data is loaded into the battery at 3 ° second intervals to achieve accurate quantitative results. As for using a pH meter to control the chemical injection rate The redox potential electrode can be used for this project. The original 7 is not like PHtK, which is suitable to be configured to start adding a reducing agent based on the acid concentration present. The redox electrode can be configured when the ionization of the aqueous solution in the tank reaches a specified level. At the beginning, the improvement of the pH control system, which was obtained by the reduction and reduction of redox potential through oxidation-reduction potential electricity, was related to the following matter f. The injection of the reducing agent based on the sub-potential is a more direct means of flat chemical reaction than the injection of pH media. Figure 2 is a further detailed description of the water strip device 210. The water strip device 210 is 8822031.ptc, page 27, 492891, amended month number 8812 ?, V. Description of the invention (23): Similar to the system shown in Figure 1 This type of water scrubber unit n0 operates in vertical co-current flow with water and polluted air. The rolling mill places water in the high surface area packing area 22. Human interaction: When the species interacts with the water reservoir or water tank 230, the obtained gas from the aerator is reduced to the standpipe of the blower and sent out of the scrubber. It is passed through the connection including fresh water or makeup water into the system, and the water flows. Mechanics of continuous water recycling. The efficiency of the scrubber can be improved by using "Yao Cao 230; flow = light bed 240. The air inlet 250 is reduced by nickel plating; the second one is ί, and the inlet is protected from corrosive attacks. U 版 / 尤Gas temperature inside the scrubber is measured with water, and w. The sigh scale is at the nine selected points shown in Figure 2. As for the use of chemical injection to promote the reduction of gas as a substitute for by-products, you can set $ = The following reaction and the completed device are produced by the milk. 仏 ~ Electron to water solution will guide F2 + e_ = 2 F- and 0F2 + 2HH4e, 2F- + H20. Although any suitable device can be used / Φ κ ^ ^ ^ Ώ ,, VII, and electronics, but the preferred configuration uses the power to enter the polyester mill as a tank and to connect to the needs of adding chemicals, the electronic 吝: bu :: DC power supply. In addition to eliminating the need to add, z, phase ω, force Only a small amount of DC power is required for the generation of electrons. As for the alternative configuration, it can eliminate the need for chemical injection, improve the reduction of fluorine gas, and suppress dioxins. A protective anode can be used for electronics such as = $ as a by-product. , The sun's decay, seizure, and strength of the solution, such as ^ Protective properties made of Monsiese or metal plates: extremely '" In a water tank, the metal (μ) will pass through the following reaction points: 88122031. ntr; page 28 492891 case number 8812203] 5. Description of the invention (24) M = M2 + + 2e In the work, the scrubber forms a passivation layer. No No external power required. The electrons required by the battery or primary battery principle. The acidity of the aqueous solution of the water tank can prevent the configuration of the protective anode like the specific example of the electrolytic cell. Based on this, the protective metal is not expected on the metal surface. The operation of the protective anode is based on the spontaneous oxidation reaction of voltaic electricity. It is related to the water scrubber that removes the two gasification oxygen without 1 化 ions reduction. In a characteristic aspect, the photodecomposition of oxygen difluoride can be performed by appropriately radiating the exhausted k-mass, for example, for use in 365 nanometer ultraviolet light (the gas phase photodecomposition of digassed oxygen occurs at this wavelength, and in the dish of the dish) The yield is!; Refer to Gmelin Handbook, F Suppl. No. 4 p. 45). This light exposure can be performed at the scrubber vents or the main packing bed of the scrubber unit. As for the other two, removing the oxygen difluoride of the water strip air heater without adding a chemical reducing agent, the air flow of the air heater is added to an appropriate temperature, such as 2 5 0-2 7 ° C ° One vaporized oxygen permeates at this temperature Homogeneous mononuclear reaction decomposition (refer to Gmelin Handbook, F Suppl, Issue 4 p. 43). As another alternative to the removal of oxygen difluoride from water scrubbers, reactive species are directed to the gas-liquid and reactively remove oxygen difluoride. Potentially useful chemical reactants for this project include, but are not limited to, human ^ c ^, brain 3, aS2 03,

Br2 ’ CO ’ Cl2,(Cl2 + Cu),Cr〇3,H2,H2S,I,Ir,CH4, o3 ’(o2 + h2o),pd,p2〇5,pt,Rh,Ru,Si〇2。 另一具體例中’翻或鈀觸媒可用於水滌氣器下游而於外 部來源添加的氫、或藉矽烷分解反應原位產生氫、或通氫Br2'CO'Cl2, (Cl2 + Cu), Cr03, H2, H2S, I, Ir, CH4, o3 '(o2 + h2o), pd, p205, pt, Rh, Ru, Si02. In another specific example, the 'turn or palladium catalyst can be used for hydrogen added downstream from a water scrubber and added from an external source, or generated in situ by a silane decomposition reaction, or passed through hydrogen

88122031.ptc 第29頁 49289188122031.ptc Page 29 492891

氟化 案號 88122031 五、發明說明(25) 氣入滌氣液而對反應物提供氫濃度的氫存在下減險 氧。 牙、 本發明t特點幻憂點參照下列言兒明例 實例1 只…、易明。 圖1及2所7Γ U型系統中,四氟化矽的 電漿反應腔室使用半導體製造設備產生 流進行。 山机衩缺排出 下表1摘述四氟化矽減除結果(破壞及去除效 劑注入以及未注入苛性物質。本例之減除… ^120 Slpm氮氣平衡的固定濃度( 300 PPm)四說化石夕導 主水滌虱益。貫驗條件選擇可代表或超過於典型電漿胪室 =期間釋放的排出氣體濃度。減除效率測量為水流速 (.5及丨gpm)及滌氣器邱(注入及未注入苛性物質)之函 石夕-1 ΐ 1研究案例中’測得務氣器出氣之說化氫及四氣化 y ^略南於分光計的摘測限度,且明顯低於其分別間 =度(TLV)(四氟化矽TLV=1 ppm ’氟化氫 TLV = 3 ppm)。 =1:於3 0 0 ppm四氣化矽於12〇 slpm氮氣之固定進氣挑Fluorination Case No. 88122031 V. Description of the invention (25) The gas is introduced into the scrubbing liquid to provide the reactants with hydrogen at a concentration of hydrogen to reduce the risk of oxygen. The characteristics of the present invention and the troubling points are referred to the following examples. Example 1 ... Easy to understand. In the 7Γ U-type system shown in Figures 1 and 2, the plasma reaction chamber of silicon tetrafluoride is performed using a semiconductor manufacturing equipment flow. The following table 1 summarizes the results of silicon tetrafluoride reduction (destruction and removal of the agent and no caustic substances. The reduction in this example ... ^ 120 Slpm fixed concentration of nitrogen balance (300 PPm). Fossils guide the main water to remove lice. The test conditions can be selected to represent or exceed the concentration of exhaust gas released during a typical plasma chamber = period. The removal efficiency is measured as the water flow rate (.5 and 丨 gpm) and the scrubber (Injected and uninjected caustic substances) Han Shixi-1 ΐ 1 In the case of the study, "the hydrogen gas and the four gasification of the outgassing device were measured. ^ Slightly below the spectrometer's extraction limit, which is significantly lower than Respectively = degree (TLV) (silicon tetrafluoride TLV = 1 ppm 'hydrogen fluoride TLV = 3 ppm). = 1: at 300 ppm of tetragas silicon fixed inlet at 120 slpm nitrogen

Hiii! 8δ122〇7Γ^ 減除結果摘述。 苛性物質 注入?(pH) 3 · 8 5 ) 否(3· 50) 是(10· 5) 氣化鐵α〉農 度(ppm) 四氟化矽 濃度(ppm) %DRE 0. 47 — 0,3 99. 86 0. 46 ---—---- 0.3 9 9,8 6 0. 15 0. 1 9 9.95 0. 13 0. 075 99. 96Hiii! 8δ122〇7Γ ^ Subtraction results are summarized. Caustic substances injected? (PH) 3 · 8 5) No (3 · 50) Yes (10 · 5) Gasification iron α > Agronomy (ppm) Silicon tetrafluoride concentration (ppm)% DRE 0. 47 — 0,3 99. 86 0. 46 --------- 0.3 9 9,8 6 0. 15 0. 1 9 9.95 0. 13 0. 075 99. 96

492891 - — MM_88122〇3丄·_吏〜_月 日 修正 五、發明說明(26) 實例2 〇 . 5至5 s 1 pm之氟氣流速輸送入配備有鈍化歧管的 Vector ®100水條氣為(ATMI依柯司(Ec〇sys)公司,加州聖 荷西)。此等流以5 0 s 1 pm平衡氮氣稀釋結果導致挑戰介於 1至6 %氟間。此外,滌氣器内部停駐時間效果係藉提高氮 流速至20 0 si pm研究。滌氣器單元性能係使用標準(12 gpm)及低(〇.75 gpm)水流速試驗。硫代硫酸鈉用於高敗氣 挑戰期間改良氟氣的去除以及免除二氟化氧生成為副產 物。 表2摘述實驗資料,且舉例說明注入硫代硫酸鈉作為還 原劑達成的增進 丨" 表2 :亂減除結果摘述 試 驗 編 號 水流 量 (gpm ) 氮氣 平衡 (sip m) 截氣 流速 (sip m) 戴氣 進氣 (ppm) 化 學 增 進? 戴化氣 出氣濃 度 (ppm) 戴氣 出氣 濃度 (ppm) 二氟化 氧出氣 濃度 (ppm) 出氣 氟當 • (ppm) % 1) K E 1 1.2 50 1 2000 0 否 7.5 1 .5 .1.25 6.5 9 U . <) 7 2 1.2 50 2 40000 否 12 2.5 3 11.5 9 ” 7 3 1 .2 50 3 60000 否 15 20 4 3 1.5 9 5 4 0.7 5 50 0.5 1 0000 否 4 0.5 <1 3.5 9 (). 9 7 5 0.75 50 1 20000 否 6 1 1 5 9 y. U Η 6 0.75 50 2.25 45 000 否 20 5 5 20 9 9 . 6 7 0.75 50 3 60000 否 28 50 10 74 9 9 . Κ Κ 8 0.75 50 2.25 45 000 是 2.25 0.5 <1 1.6 9 9 . (m> 9 0.75 200 3 1 5 000 是 25 38 <1 50.5 9 9 . *7 10 0.75 200 5 2 5 000 是· 42 120 <1 141 9 4492891-— MM_88122〇3 丄 · _ 吏 ~ Rev. V. Description of the Invention (26) Example 2 0.5 to 5 s 1 pm The flow rate of fluorine gas is delivered to Vector ® 100 water strip gas equipped with a passivation manifold (ATMI Ecosys, San Jose, California). The dilution of this stream with 50 s 1 pm equilibrated nitrogen results in challenges between 1 and 6% fluorine. In addition, the effect of the dwell time inside the scrubber was studied by increasing the nitrogen flow rate to 200 si pm. The scrubber unit performance was tested using standard (12 gpm) and low (0.75 gpm) water flow rates. Sodium thiosulfate is used in high-defeat gas challenges to improve the removal of fluorine gas and to eliminate the generation of oxygen difluoride as a by-product. Table 2 summarizes the experimental data, and illustrates the improvement achieved by injecting sodium thiosulfate as a reducing agent. Table 2: The results of the random reduction are summarized in the test number water flow (gpm) nitrogen balance (sip m) interception flow rate ( sip m) Degassing (ppm) Chemical Enhancement? Daihua gas outgassing concentration (ppm) Daigas outgassing concentration (ppm) Oxygen difluoride outgassing concentration (ppm) Outgassing fluorine when (ppm)% 1) KE 1 1.2 50 1 2000 0 No 7.5 1.5 .1.25 6.5 9 U. ≪) 7 2 1.2 50 2 40000 No 12 2.5 3 11.5 9 ”7 3 1 .2 50 3 60000 No 15 20 4 3 1.5 9 5 4 0.7 5 50 0.5 1 0000 No 4 0.5 < 1 3.5 9 ( ). 9 7 5 0.75 50 1 20000 No 6 1 1 5 9 y. U Η 6 0.75 50 2.25 45 000 No 20 5 5 20 9 9. 6 7 0.75 50 3 60000 No 28 50 10 74 9 9. Κ Κ 8 0.75 50 2.25 45 000 is 2.25 0.5 < 1 1.6 9 9. (M > 9 0.75 200 3 1 5 000 is 25 38 < 1 50.5 9 9. * 7 10 0.75 200 5 2 5 000 is · 42 120 < 1 141 9 4

492891 年 月 曰 案號 88122031 五、發明說明(27) 破壞及去除效率百分比(% ]) r £ )係使用標準表示式決定 %DRE=100 xU-出氣氟當量/進氣氟) 其中進氣氟表示以ppm表示之氟進氣濃度,及出氣氟當 量定義為: 出氣氣當[出氣氟濃度;|ppm+1/2[出氣氟化氫濃度] ppm+[出氣二氟化氧濃度]ppm 上式中%DRE係使用進氣及出氣濃度調整稀釋效應決定, 原因在二濃度受稀釋影響。此種決定獲得實際送出滌氣器 系統之氟質量相對於實際進入系統之氟質量之測量值。 於王。卩研九的條件下,水滌氣器可去除超過99%輸送的 氟。需注意表2列舉的去除效率表示本發明經還原劑提升 的水;k氣為處理於最惡劣情況下的性能相對於習知電聚腔 室清潔期間釋放出的排出氣流之性能。 5 = :表列出氣濃度表示於長期且連續輸送氟氣 至,乳益後達成的平衡值。此種穩態隨初氟濃度而定,係 方、.式驗開始後1 G至3 0分鐘達成。腔室清潔時間通常為達成 平衡所需時間的分量。 圖3舉例說明施用水對氟竑峪 机藏除效率的影響。如所預期, 補充水流速影響滌氣效果,B , 7y曰卞札双禾,且為咼氟挑戰下的限制因素。 未經化學提升,滌氣器出口的_ # ,0 ,、 ® 的™齓化氧濃度於使用0. 75及 i.2gPm水分別輸送約大於3%及6%敦(5〇 slpm之壓載 超過3 ppm。試驗8至1 〇(表老矣w "内 〆号表2) %證化學注入除了提升 ^入“丄λ卩刺一鼠化虱的形成。例如試驗Θ及8之 只焉欢條件元全相同,僅化學描社 予徒升劑的輸送不同。化學注入Case No. 88122031, dated 492891 V. Description of the invention (27) Destruction and removal efficiency percentage (%)) r £) is determined using standard expressions% DRE = 100 xU-outlet fluorine equivalent / inlet fluorine Denotes the fluorine inlet concentration expressed in ppm, and the fluorine equivalent of the outlet gas is defined as: outlet gas equivalent [outlet fluorine concentration; | ppm + 1/2 [outlet hydrogen fluoride concentration] ppm + [outgas difluorinated oxygen concentration] ppm% in the above formula DRE is determined by adjusting the dilution effect using the inlet and outlet concentrations. The reason is that the second concentration is affected by the dilution. Such a decision obtains a measurement of the mass of fluorine actually sent out of the scrubber system relative to the mass of fluorine actually entered into the system. Yu Wang. Under the conditions of Yuyanjiu, the water scrubber can remove more than 99% of the fluorine delivered. It should be noted that the removal efficiency listed in Table 2 represents the water promoted by the reducing agent of the present invention; the performance of k gas is the performance in the worst case compared to the exhaust gas released during the cleaning of the conventional electropolymerization chamber. 5 =: The gas concentration in the table indicates the equilibrium value reached after long-term and continuous delivery of fluorine gas to milk. This steady state depends on the initial fluorine concentration, which is reached between 1 G and 30 minutes after the start of the formula test. Chamber cleaning time is usually the component of the time required to reach equilibrium. Figure 3 illustrates the effect of water application on the storage efficiency of fluorene. As expected, the flow rate of the make-up water affected the scrubbing effect, and B, 7y was called Zha Shuanghe, and it was the limiting factor under the challenge of fluoridation. Without chemical enhancement, the _ #, 0 ,, and ™ of the scrubber outlet ™ tritium oxygen concentration was transported by using 0.75 and i.2gPm water, respectively, greater than 3% and 6% (50 slpm ballast). Exceeds 3 ppm. Tests 8 to 10 (Table 2) " Internal Test No. Table 2)% of the chemical injection in addition to the promotion of "丄 λ 卩 stabbing the formation of a rat lice. For example, test Θ and 8 only The conditions are the same, only the delivery of the zoom agent is different from the chemical description agency. Chemical injection

年 月 曰 修正 ^88122031 五、發明說明(28) =低氟J化氫及氟之出氣濃度達因數丨〇,且降低二氟化氧的 >辰度至低於偵測限度。 圖4顯示務氣器水槽邱及氟化氫及氟廢氣濃度呈時間之 函,。該曲線驗證氣體的擊穿顯著延遲以及水pH之函數。 $二’典型腔室清潔過程所釋放的氟之時間相關濃度並非 f常數。於初階段期間,大半於腔室產生的氟用以與二氧 徭矽ϋ ?釋放四氟化矽氣體。唯有於二氧化矽被消耗 匕=氟才藉工具以顯著量被排放。 可資:分析指示放熱反應產生的熱 _氣口位度變錄= 高氟挑戰期間伯測得π声曰士二=間的弟一父界面。於取 rc)。大容於% 1 度取大值由17。〇升高至26°C(AT = 可有效急冷由k 3水之熱容合併與周圍環境之熱交換 滌氣器(包括進氣7李 生,熱。此外,於試驗完成後,於 料劣化徵象。敕轉、内σ卩任何位置皆未見顯著腐蝕或材 石旁(或相當於85;^)而氟\氣,1氣器暴露於且可有效減除3· 2 前述資料舉例說明本發明提 氟氣之優點。 "、促進由含氟排出氣流去除 於另特彳政方面,本發明係關於一 其"例如為氫、_原子(氟、氯::種減除矽烷類SiR4 ’ (SlH4),但需瞭解其它矽烷衍生物針對甲矽烷本身 可以類似方式減除,Year, month, and amendment ^ 88122031 V. Description of the invention (28) = The concentration of outgassing of low-fluorine J-hydrogen and fluorine reaches a factor of 丨 0, and the > degree of oxygen difluoride is reduced to below the detection limit. Figure 4 shows the function of time for the concentration of hydrogen fluoride and fluorine exhaust gas in the tank of the air heater. This curve verifies the significant delay in gas breakdown as a function of water pH. The time-dependent concentration of fluorine released in the $ 2 'typical chamber cleaning process is not an f-constant. During the initial stage, most of the fluorine generated in the chamber is used to release silicon tetrafluoride gas with dioxin. Only when the silicon dioxide is consumed, d = fluorine is emitted by the tool in a significant amount. Available: Analysis of the heat generated by the exothermic reaction _Variation of the port position = π sound measured by the Bo during the high-fluorine challenge, Shi Ji = Shidi = Father-Father interface. (Take rc). Larger than 17%. 〇Increase to 26 ° C (AT = can be effectively quenched by the heat capacity of k 3 water combined with the surrounding environment heat exchanger scrubber (including air intake 7 Li Sheng, heat. In addition, after the test is completed, the material deteriorates No significant corrosion was found at any position of 敕 turning, inner 卩 卩, or near the stone (or equivalent to 85; ^), and fluorine, gas, and 1 gas were exposed and could effectively reduce 3.2. The foregoing information illustrates this. Advantages of inventing fluorine gas. &Quot; Promote removal by fluorine-containing exhaust gas stream in another special aspect. The present invention is related to " for example, hydrogen, _ atom (fluorine, chlorine :: a kind of silane reduction SiR4) '(SlH4), but it is important to understand that other silane derivatives can be eliminated in a similar manner against silane itself,

88122031.ptc 第33頁88122031.ptc Page 33

Cl 一Cs)烷基、烷氧基、烯基、炔美或、彳、碘)、烷基(例如 氣流處理系統。雖然後文^壬何其它適當取代基Cl-Cs) alkyl, alkoxy, alkenyl, alkynyl, hydrazone, iodine), alkyl (such as gas flow processing system. Although later ^ any other suitable substituents

例如四I基乙烯基矽烷(TMVS)。 時出:當使用中性水作為務氣器液 此乃極端出人咅外s+门運gbU/°效率破壞。 溶於水,石夕垸;眾所周知石夕燒高度不 除反應可藉自缺#, θ:汉^生矽烷於水之去 s# # ^ 1…、於水的小量氧氣催化。 雖然某些案例所得矽烷之去除效 現矽烷可於水滌氣器-庙100广但明顯發 合矽炫排屮今4 p使級和反應。貫際上,產生 3矽烷排出虱流之工業設施座生For example tetra-I-vinylsilane (TMVS). Time out: When using neutral water as the server fluid, this is extremely s + gbU / ° efficiency destruction. It is soluble in water, Shi Xiyan; it is well known that Shi Xiyan's high degree of reaction can be borrowed from the lack of #, θ: Han ^ raw silane in water to go s # # ^ 1, a small amount of oxygen catalyzed by water. Although the silane removal effect obtained in some cases shows that silane can be used in the water scrubber-miao 100, it is apparent that it can be combined with silicon to reduce the level of the reaction. Consistently, industrial facilities that produce 3 silane to discharge lice

率;偶爾僅將秒烧濃度降至低於爆;=二燒:皮壞效 氣額外空氣至補充水即可獲得改良效果 乳。。或經由通 矽烷可於水滌氣器減除之 注入劑如氫氧化钾。前文所述的水= : = 性化學 形的化學注入系統,苴 时了配備有一體成 決定的速率下計量注又/ Γ速率或於滌氣液抑設定點 义 :r ^里/主人水務氣器的化學注人劑。 刖u辦法之叙點為熱氧化滌氣器埶 烷減除’因而比較使用埶 j :乳杈、,且不需要矽Rate; occasionally only reduce the concentration of second burn to below burst; = second burn: skin bad effect, extra air to supplement water can get improved effect milk. . Alternatively, an injectant such as potassium hydroxide can be removed in a water scrubber by passing silane. The aforementioned chemical injection system of water =: = chemical form, is equipped with an integrally-determined rate under the metering / Γ rate or the set point of the gas-liquid depressor: r ^ li / master water business gas Chemical injection of the device. The point of the 热 u method is the thermal oxidation scrubber 埶 alkane reduction ’, so it is more used 埶 j: milk branch, and no silicon is needed

低排出氣流處理系統的擁;著降 氣未被加熱故可避免腐钱。一進一二^因存在的酸 矽石,係於滌氣器形成,故 1&…為反應副產物, - A S AA〜 —成故以廢水洗掉。此盥埶«务哭留 兀书見的矽石5戈氦化矽造成的阻塞相反。、…、乳化-早 另一具體例中’石夕燒可接用-減除,載入模組特別t = 不載入模組3〇〇來進行 x计成可於包含此種蘇氣器單元的減Low exhaust airflow treatment system; the downdraft is not heated to avoid corruption. One by one ^ As the presence of acid silica is formed in the scrubber, 1 & ... is a reaction by-product,-A S AA ~-it is washed away with wastewater. This toilet «Wu crying and staying in Wu Shu see the silica 5 Ge silicon helium caused the opposite blockage. , ..., emulsification-Early in another specific example, 'Shi Xiyao can be used-subtracted, the special module is loaded t = 300 is not loaded to perform x counting can be included in this type of aerator Unit minus

492891492891

_案號 881220W 五、發明說明(30) 年月日_ 除糸統減除務氣斋單元3 1 4上游的石夕烧。來自上游處理單 元(圖中未顯示)之含矽烷氣體被導入進給管線3〇2至載入 模組3 0 0的進氣口 304,然後流入載入管3 0 6,其由適當來 源(未顯示於圖5 )被進給以管線3 1 8的水。於載入管中,來 自管線3 0 2的氣體混合來自管線3 1 8的水,乾淨乾空氣 (CDA)被注入而輔助氧化矽烷成份。CDA可如圖5所示一系 列注入,注入管線3 08、310及312顯示為可沿載入管以固 定間隔排放CDA至氣體/水混合物。_Case No. 881220W V. Description of the Invention (30) Date __ Shi Xiyao on the upper stream of the 3rd and 4th qiqizhai units. The silane-containing gas from the upstream processing unit (not shown) is introduced into the feed line 3002 to the inlet 304 of the loading module 300, and then flows into the loading pipe 3 06, which is sourced from an appropriate source ( Not shown in Figure 5) Water fed with line 3 1 8. In the loading tube, the gas from line 3 02 is mixed with water from line 3 1 8 and clean dry air (CDA) is injected to assist the oxidation of the silane component. CDA can be injected in a series as shown in Fig. 5, and injection lines 3 08, 310, and 312 are shown to discharge CDA to the gas / water mixture at regular intervals along the loading tube.

然後結果所得氣體/空氣/水流進入滌氣器單元3丨4,氣 流藉水條氣而產生矽炫含量減低之氣流,其由滌氣器31'4 於排放管線31 6排放。 載入模組3 0 0可由適當非腐蝕性材料如不鏽鋼製成,且 作為非熱氧化器功能,乾淨乾空氣被導入載入管。此種設 計比習知熱氧化器之優點在於需要熱能,不會形成N〇x, 且可防止腐蝕原因在於溫度低(例如周圍或近周圍溫。 工作時,排出氣流進入不鏽鋼載入管3〇6,&CDA於特定 位置被導入。CDA與矽烷反應形成矽石(Si〇2),矽酸、、 (HSi〇3)或其它水合矽酸鹽(Si〇2*xH2〇)。無需火花或熱,The resulting gas / air / water flow then enters the scrubber unit 3 丨 4, and the air flow generates a gas stream with a reduced content of silicon by the water strip, which is discharged by the scrubber 31'4 in the discharge line 3116. The loading module 300 can be made of a suitable non-corrosive material such as stainless steel, and as a non-thermal oxidizer, clean dry air is introduced into the loading tube. The advantage of this design over the conventional thermal oxidizer is that it requires thermal energy, does not form NOx, and can prevent corrosion due to low temperature (such as ambient or near ambient temperature. During work, the exhaust air flows into the stainless steel loading tube. 6, & CDA is introduced at a specific location. CDA reacts with silane to form silica (Si〇2), silicic acid, (HSi〇3) or other hydrated silicates (Si〇2 * xH2〇). No spark required Or heat,

即使石夕燒之進氣濃度低於其LEL亦如此。 =烧減除…用於椒壞所需之CDA流 排出乳體之特殊特點而改變(例如石夕^農度及氣氣流速)。 CDA可於一個或多於一個位置或於循序階段被入 产定,可通氣進人蘇氣器液。藉此方切烧破壞效率可於 “處理用途選擇性視需要提升。當採用多重CDA階段This is true even if the intake concentration of Shi Xiyao is lower than its LEL. = Burning and removing ... The CDA flow required for pepper spoilage is changed due to the special characteristics of milk discharge (such as Shixi ^ agricultural degree and gas flow rate). CDA can be scheduled for production at one or more locations or in a sequential phase, and can be ventilated into the aspirator fluid. With this, the cutting efficiency can be improved in "selective use as needed. When using multiple CDA stages

88122031.ptc88122031.ptc

492891 JL 月 修正 曰 —案號 88122^1 五、發明說明(3]) 方便^H之㈤'距離可無需、經由不# #努力以實驗性 進^ r括’且係為整體氣體流速及石夕燒流速之函數。 量ί二二進,結構之修改包括連結含石夕靡刚 置:若μΪγ\Λ與控制CDA至進氣結構的閥。此種系統可配 ΐί= 則CDA間將開啟,並允許一選定_流 額外砂俨=油站A階段。此種額外CDA可確保流至滌氣器的492891 JL Month Amendment—Case No. 88122 ^ 1 V. Description of the Invention (3)) Convenient ^ H's distance can be eliminated without any effort through ## Efforts to experimentally advance it and include the overall gas flow rate and stone. As a function of the burning speed. The amount of ί is binary, and the structure modification includes the connection of Shi Ximei's rigid position: if μΪγ \ Λ and the valve that controls the CDA to the intake structure. Such a system can be equipped with ΐί =, then the CDA room will be opened, and a selected stream will be allowed. Additional sand = stage A of the petrol station. This additional CDA ensures that the

杏施1減除。此種控制系統也可使用氮氣替代CDA 二至低單純作為稀釋劑,俾便確保梦炫濃度將被調 I至低於其LEL濃度。 矽ΐ於ΐ i ί ?點,希望可使用大量CDA以控制方式點燃 ^ ^ 單純以惰性氣體如氮氣稀釋矽烷。當MFC適 二iVn^-v、^不希望連續執行高流速CDA或氮氣,原因可能 仏成CDA或氮氣的浪費。 除J CDA外,水亦為操作進氣結構的必要成份。水可流 ϊ ί 5 ί構,以致於一夾套腔室環繞排出氣流通過的進氣 二、〉。在具體實施例中,水被壓迫至進氣結構頂端且 μ,堰,故對排出氣流通過的管路全體形成濕壁管柱。濕 土苢柱了、、隹持進氣結構的冷卻,也可用於去除石夕烧/氧氣 反應的任何固體副產物。此種結構包括美國專利申請案第 08/857,以8號,申請日1 997年5月16日,申請人J〇seph、D·Xing Shi 1 minus. This control system can also use nitrogen instead of CDA II to low as a simple diluent, ensuring that Mengxuan concentration will be adjusted to below its LEL concentration. At the same time, I hope that a large amount of CDA can be used to ignite in a controlled manner ^ ^ Simply dilute the silane with an inert gas such as nitrogen. When the MFC is suitable for iVn ^ -v, ^ does not want to continuously perform high-flow rate CDA or nitrogen, the cause may be waste of CDA or nitrogen. In addition to J CDA, water is also an essential component for operating the air intake structure. Water can flow ϊ 5 ί structure, so that a jacketed cavity surrounds the intake air through which the exhaust air flows. In a specific embodiment, water is compressed to the top of the air intake structure and μ, weir, so a wet wall pipe string is formed for the entire pipeline through which the exhaust airflow passes. Wet soil pillars, which support the cooling of the air intake structure, can also be used to remove any solid by-products of the stone sintering / oxygen reaction. Such a structure includes U.S. Patent Application No. 08/857, No. 8, application date May 16, 1997, applicants Joseph, D.

Sweeney等人,名稱「導入含微粒狀固體及/或固體形成氣 流至氣體處理系統之防阻塞進氣結構」,美國專利申請案 第〇8/J78, 386號,申請日1 9 9 6年12月31日,申請人scottSweeney et al., Titled "Anti-blocking air intake structure for introducing particulate solids and / or solids to form a gas flow into a gas processing system", U.S. Patent Application No. 08 / J78, No. 386, Application Date 1 996 Applicant, scott

Lane等人’名稱「導入含微粒狀固體流之流體處理系統之Lane et.

11111111

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月 θ 其揭示併述於此以供參考所示該犁满 防阻塞進入結構」 壁管柱。 另一種進氣結構之可能的修改涉及⑶乂通氣至水,其於 整$管路形成濕壁管柱。 广::解CDA之最佳添加量將隨矽烷、氮氣及其它於設備 处的虱體如氨氣的特定流動條件決定。最佳cm流速例 1軚準立方呎/小時(Scfh)至約100scfh。 氣:上T用於含矽烷之排出氣流中減除矽烷之另-型進 巩結構400之示意代表圖。 體ίΐϋ構40 0接收來自上游來源(圖中未顯示)例如半導 、、亡轭的含矽烷排出氣流。氣體被導引入管線4 0 2且 二*部配!有光電螺旋埠口 40 6之進入管404内部。光電 月η 1 1藉亂或其它適當氣體氣流於升高溫度或另外於 ^圍▲度流過其中(例如琿口内部通道,或埠口 加熱以防埠口阻塞。 A ^ 此種配置可於排出氣體含有可冷凝成份 螺線埠口阻塞傾向。 ’見服先電 ,入管404向下延伸進入具有比進入管更大截面積的下 方官形通這件410,以及排出氣體進入下方管形 之内部通道460。 、、仟 下方管形通道件410包含一筒形外壁,其具有上段配備 有進氣口414、416。氮氣或其它適當氣體被加壓至X適當程 度,並經埠口於管線418流入周邊通道412内部。通道4田12 由多孔内壁420所界限,且多孔内壁與外壁呈於徑向方向Month θ which is disclosed and described here for reference shows that the plow is full of anti-blocking entry structures "wall pipe string. Another possible modification of the air intake structure involves ventilating the water to the water, which forms a wet-walled string in the entire pipeline. Guang: The optimal amount of CDA solution will be determined by the specific flow conditions of silane, nitrogen and other lice in the equipment such as ammonia. Optimal cm flow rate example 1 quasi-cubic feet per hour (Scfh) to about 100 scfh. Air: The upper T is a schematic representative diagram of another-type inlet structure 400 for removing silane from the silane-containing exhaust air flow. The body 40 receives a silane-containing exhaust gas stream from an upstream source (not shown) such as a semiconducting, dead yoke. The gas is led into the pipeline 4 2 and 2 * parts! There are photoelectric screw ports 406 into the tube 404. Photovoltaic month η 1 1 flows through the air at an elevated temperature or at a temperature of about ▲ degrees (for example, the internal channel of the port, or the port port is heated to prevent the port port from being blocked. A ^ This configuration can be used at The exhaust gas contains a condensable component, and the solenoid port is prone to blockage. 'See the service first, the inlet pipe 404 extends downward into the lower official shape 410 with a larger cross-sectional area than the inlet pipe, and the exhaust gas enters the lower tube shape. Internal channel 460. The lower tubular channel piece 410 includes a cylindrical outer wall with an upper section equipped with air inlets 414, 416. Nitrogen or other appropriate gas is pressurized to the appropriate level of X, and passes through the port to the pipeline 418 flows into the surrounding channel 412. Channel 4 Tian 12 is bounded by a porous inner wall 420, and the porous inner wall and the outer wall are in a radial direction.

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五、發明說明(33) 隔開關係。多孔内壁可由燒結金屬、 透氣材料製成,該材料許可加壓氣體济ς匕適當可 通道460連通的内部通道43〇。 、 L ^ 氣土至與内部 如此上段被加壓氣體遮蓋,其内壁面被保 體,以致使固體冷凝與沈積於壁^ 萄氣 細之上段以環形凸緣452加蓋面以二工^ 形環422及424密封於結構定位。環形奶^用〇 =位,鎖定環可選擇性以人工拆卸而接近精 管狀通道件41 0之下段包含外壁44〇與内壁442呈徑 向隔開關係而介於其間形成環形容積444。盘環形容浐 通,水入口448,其接合至適當水源。如此被導入心進 入裱形容積444且溢流於内壁442之上端446,隨後向下& 向壁442之内面,以保護壁面不接觸正在接受處理的氣机 流,同時同流洗滌壁面而去除任何可能接觸其上之下垂 膜的顆粒。 官狀通道件410之下段止於徑向伸展凸緣454,其具有一 夾套4 5 6位於其下表面上,係用以防漏地牢固密封進氣結 構至下游單元,例如水滌氣器單元、氧化單元、化學劑配 送腔室或排出氣體處理系統之其它組件。 圖6之進氣結構當用於將含矽烷氣流導入滌氣器單元 時’可有效破壞低於爆炸下限濃度的矽烷。當乾淨乾空氣 於入口通入水中時,可於CDA之最溫和流速達成98%+之矽 烧去除效率,例如每小時流速約4 - 5標準立方呎。另外,V. Description of the invention (33) Separation relationship. The porous inner wall may be made of a sintered metal, a gas-permeable material, which allows the pressurized gas to properly communicate with the internal passage 460 which can communicate with the passage 460. The upper section of L, L ^ gas and soil is covered by pressurized gas, and its inner wall surface is protected, so that solids condense and settle on the wall The rings 422 and 424 are sealed in the structure. The ring-shaped milk can be used in a position of 0, and the locking ring can be selectively dismantled to access the precise tubular passage member 41. The lower section includes an outer wall 44o and an inner wall 442 in a radially spaced relationship to form an annular volume 444 therebetween. The disc is ring-shaped and has a water inlet 448, which is connected to a suitable water source. In this way, the lead is introduced into the mounting volume 444 and overflows to the upper end 446 of the inner wall 442, and then downwards & to the inner surface of the wall 442 to protect the wall from contacting the gas flow being treated, and at the same time washing and removing the wall Any particles that may come in contact with the sagging membrane above it. The lower section of the official channel piece 410 ends with a radially extending flange 454, which has a jacket 4 5 6 on its lower surface, which is used to firmly seal the air intake structure to the downstream unit in a leak-proof manner, such as a water scrubber Units, oxidation units, chemical distribution chambers or other components of the exhaust gas treatment system. The air intake structure of Fig. 6 when used to introduce a silane-containing gas flow into a scrubber unit 'can effectively destroy silanes below the lower explosive concentration. When clean and dry air enters the water at the inlet, it can reach 98% + silicon burning removal efficiency at the mildest CDA flow rate, such as about 4-5 standard cubic feet per hour. In addition,

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_案號 88122031 五、發明說明(34) CDA可流經圖6顯示之氮埠口之一或之二。 至於圖6所示該型進氣結構應用於含矽烷氣流之條氣處 理且將乾淨乾空氣導入氣流之矽烷去除效率之特例,下I A列舉此種滌氣系統試驗結果,包括添加及未添加苛性物& 質(氫氧化鈉)(此種化學品添加可於滌氣器單元藉化學注 入執行,如文中它處所述)。_ Case number 88122031 V. Description of the invention (34) The CDA can flow through one or two of the nitrogen ports shown in FIG. 6. As for the special case of the silane removal efficiency of this type of air intake structure applied to the stripe containing silane flow and the clean dry air is introduced into the flow shown in Figure 6, the following IA lists the results of this scrubbing system test, including the addition of caustic &Amp; substance (sodium hydroxide) (this chemical addition can be performed in the scrubber unit by chemical injection, as described elsewhere herein).

表A列表資料包括石夕烧成份之進氣濃度,以每百萬份容 積比之份數(ppm)表示,排氣濃度,於矽烷流速為每分鐘 4 8 0標準立方厘米(s c c m ),於滌氣速率(條氣液流速)每分 鐘1加侖(gpm)及0. 5gpm,連同乾淨乾空氣流速以每小時標 準立方呎(s c f h )表示,及矽烷之乾去徐效率(以乾燥為基 準的效率)百分比%DRE。 土The data in Table A includes the air intake concentration of the components of Shi Xiuyao, expressed in parts per million volume ratio (ppm). The exhaust concentration, the flow rate of silane in the standard is 480 standard cubic centimeters per minute (sccm). The scrubbing rate (strip gas-liquid flow rate) 1 gallon (gpm) and 0.5 gpm per minute, together with the clean dry air flow rate expressed in standard cubic feet per hour (scfh), and the dry removal efficiency of silane (based on drying) Efficiency)% DRE. earth

表A 燒破壞,^夕烧流速4 8 0 s c c m 無苛性物質 排出曱矽 烷(ppm) 1 CDA(scfh) 進氣濃度 1 gpm 0. 5gpm %DRE(1 gpm) %DRE(0. 5 gpm) 0 6 92 0 3446. 3 35 78 50. 2 48. 3 2 68^7 ~ 1571 1900 77. 0 72. 2 4 6737 130. 4 290 98. 1 95. 7 6 6649 1663.8 16 95 75· 0 74. 5Table A Burning failure, burning speed 4 8 0 sccm No caustic substance discharge 曱 Silane (ppm) 1 CDA (scfh) Intake concentration 1 gpm 0.5 gpm% DRE (1 gpm)% DRE (0. 5 gpm) 0 6 92 0 3446. 3 35 78 50. 2 48. 3 2 68 ^ 7 ~ 1571 1900 77. 0 72. 2 4 6737 130. 4 290 98. 1 95. 7 6 6649 1663.8 16 95 75 · 0 74. 5

88122031.ptc 第39頁 492891 年 案號 88122031 月 曰 修正_ 五、發明說明(35) 含苛性物質 排出曱矽 烧(p p m) CDA(scfh) 進氣濃度 1 gpm 0. 5gpm °/〇DRE(l gpm) %DRE(0. 5 gpm) 0 6920.4 762 1755 89. 0 74.6 2 6827.5 1206 1616 81. 3 76. 3 4 6737.0 819 920 87. 8 86. 3 6 6648.9 765 930 88. 5 86. 0 8 6563.1 880 86. 6 前文 氣流的 其它 揭不之 曰 1 997 「導入 之防阻 申請曰 「導入 構」, 至於 作前或 而實質 至於 顯示CDA導引至滌氣器之上游氣流可高度有效減除 矽烷。 進氣結構可用於廣義實施本發明,包括下列專利案 進氣結構,美國專利申請案第08/857, 448號,申請 年5月16日’申請人j〇seph d. Sweeney等人,名稱 ^微,狀固體及/或固體形成氣流至氣體處理系統 塞進氣結構」,美國專利申請案第〇8/778, 386號, 1 9 96年12月31日’申請人sc〇tt Lane等人,名稱 t微粒狀固體流之流體處理系統之防阻塞進入結 其揭示整體併述於此以供參考。 之”減除矽烷之另一辦法,在組合滌氣操 執行—入ΐ虱化鉀或其它適當反應物可接觸氣流, =了凡王去除在將接受處理的氣流中 毛生之起泡現象,本發明於另一具體例88122031.ptc Page 39 of 492891 case No. 88122031 Amendment _ V. Description of the invention (35) Caustic substances emitted 曱 Silicon burn (ppm) CDA (scfh) Intake concentration 1 gpm 0.5 gpm ° / 〇DRE (l gpm)% DRE (0. 5 gpm) 0 6920.4 762 1755 89. 0 74.6 2 6827.5 1206 1616 81. 3 76. 3 4 6737.0 819 920 87. 8 86. 3 6 6648.9 765 930 88. 5 86. 0 8 6563.1 880 86. 6 Other unveiling of the previous airflow is 1 997 "Introduction of anti-blocking application is called" introduction structure ". As for the pre- or actual substance, it is shown that the upstream air flow guided by the CDA to the scrubber can highly effectively reduce silane. . The air intake structure can be used to implement the present invention in a broad sense, including the following patent case air intake structure, US Patent Application No. 08/857, 448, application May 16, 'Applicant j〇seph d. Sweeney et al., Name ^ "Micro-like solids and / or solids form a gas flow to the gas processing system plug inlet structure", US Patent Application No. 08/778, 386, December 31, 1996 'Applicant sc〇tt Lane et al. The anti-blocking entry of the fluid treatment system of the name t particulate solid flow is disclosed in its entirety and described here for reference. Another method of reducing silane is to perform it in combination scrubbing operation—entering potassium lice or other appropriate reactants to contact the airflow, which has eliminated the blistering of hair in the airflow that will be treated. The invention is in another specific example

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用用以抑制泡沬形成之裝置,例 ΐΐΠ::乙_麵)或氯化石夕燒存在於將接受以 ;:中:;果’而於務氣液環境時可能造成相當量;= 且i:丨t:之一具體例中,消泡劑可注入滌氣器。另一Use a device to inhibit the formation of vesicles, such as ΐΐΠ :: 乙: 面) or chlorinated sulphuric acid, which will be accepted in;: 中:; 果 ', and may cause a considerable amount in the gas-liquid environment; = and i : 丨 t: In a specific example, the defoamer can be injected into the scrubber. another

=^便降低循環滌氣液被導引至務氣柱填塞物^ υ %:特別是’孔板可設置於循環幫浦排放管線上, :減^液的流速及壓力。此種孔板對幫浦形成反壓, ,'或消除氣泡或漩渦等的出現,氣泡或漩渴等 中,特別於存在有TE0S或齒化矽烷時可能導致起泡。二 更特別是,消泡化學添加劑可藉圖7所示之該型化學注 入單元添加至水滌氣器。 〆= ^ Will reduce the circulating scrubbing liquid to be guided to the packing of the gas column ^ υ%: Especially the 'orifice plate can be set on the circulation pump discharge pipeline,: to reduce the flow rate and pressure of the liquid This type of orifice plate exerts a back pressure on the pump, and can eliminate the occurrence of bubbles or swirls, etc., especially in the presence of TEOS or toothed silane, which may cause foaming. More specifically, the defoaming chemical additive can be added to the water scrubber by a chemical injection unit of the type shown in FIG. 〆

圖7顯示水滌氣器5 0 0,氣流於管線5〇2被導引至進氣社 構5〇4,其示意說明於圖中。氣流以水性滌氣介質於滌氣 裔腔室5 0 6滌氣,由腔室中,滌氣後的氣流於排放導管5〇8 排放,選擇性通過後滌氣器單元51 〇,最終由滌氣器系統 =放琿口511於管線512排放。滌氣器系統包含滌氣液循環 ^浦5 1 4 ’其接納來自管線5 〇 5的進入滌氣液,以及於排放 官線5 1 8排放排出氣流及循環利用的滌氣介質。化學注入 劑由化學注入單元524之化學注入管522透過管線52 0流至 循%幫浦5 1 4。補充滌氣液透過進給管線5丨6流至後滌氣器 單元510。包含適當監視、感測、儀器、運算、調整及引 動裝置的控制模組5 2 6可控制滌氣器系統及化學注入單 元0Fig. 7 shows a water scrubber 500, and the air flow is guided to the air intake mechanism 504 through a line 502, which is schematically illustrated in the figure. The air stream is cleaned by a water-based scrubbing medium in the scrubber chamber 506. From the chamber, the scrubbed air stream is discharged through a discharge duct 508, and selectively passes through the rear scrubber unit 51 °. Air system = discharge port 511 to line 512 for discharge. The scrubber system includes a scrubber liquid circulation pump 5 1 4 ′, which receives the scrubber liquid from the pipeline 5 05, and discharges the exhaust gas stream and the recycled scrubber medium on the discharge official line 5 1 8. The chemical injection agent flows from the chemical injection pipe 522 of the chemical injection unit 524 through the line 52 0 to the circulation pump 5 1 4. The make-up scrubbing liquid flows to the rear scrubber unit 510 through the feed line 5 丨 6. Control module containing appropriate monitoring, sensing, instrumentation, calculation, adjustment and actuation devices 5 2 6 can control scrubber system and chemical injection unit 0

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修正__ 屈化ί ΐ t系統524用於注入消泡化學劑。使用的消泡劑 a:k田頜型且添加可修改縧氣液表面張力的濃度 =及=於ΐ義實施本發明之消泡材料實例包括消4 主的材料。此種聚石夕石;包;康寧公司,纟為以聚石夕石為 比)之活性聚以於水^Λ材/可以約i至約1⑽卿(重量 度可方便於特定用途,並V\介質中之七度使用。消泡濃 1且監控滌氣器的起泡作用而方便決定。 y 叮:署:ί ί少起泡方法係修改幫浦循環管線之管路。例如 孔口於幫浦循環管線來減少或消除泡沐的生 ,卜^ n ^ I :降低循環液流逮’因此隨著時間的經過,較 it乳液衝擊於滌氣腔室之 ^ 2置:,…效地降低務氣;由填塞;柱 孔口达出時的壓力。 只務 統i i (辦Λ中’、限流孔口可於各種可能的系統位置減少系 鈐:^門1々Λ-液的機械攪動,例如(i )於喷霧喷嘴,由於、 :ϊΐ ;壓降減低;(11)於填塞物表面,由於液體衝擊 低;以及(ill)幫浦内部,由於通過幫浦的 或沪、、品的二氏也對幫浦形成背壓,減少或消除通入氣體 1 : : J生’其可能於某些案例,特別於存在有TE0S或Modification __ QU hua 系统 t system 524 is used to inject defoaming chemicals. The antifoaming agent a: k-field jaw type and the concentration that can modify the surface tension of radon gas and liquid = and = Examples of defoaming materials used in the present invention include anti-foaming materials. This kind of polylithic stone; Bao; Corning Company, which is based on polylithic stone, is active in water ^ Λ / can be from about i to about 1 (weight can be convenient for specific purposes, and V \ Seven degrees of use in the medium. The defoaming concentration is 1 and the foaming effect of the scrubber is monitored for easy determination. Pumping the circulation pipeline to reduce or eliminate the health of the bubble, ^ n ^ I: reduce the circulating fluid flow to catch 'so over time, it emulsion impacts the polyester chamber ^ 2 set:, ... effectively Reducing work pressure; packing; pressure when the column orifice reaches out. Only service system ii (for Λ 中 ', the restriction orifice can reduce the system at all possible system positions: ^ 门 1々Λ- 液 的 机械Stir, for example (i) at the spray nozzle, due to:: ϊΐ; pressure drop is reduced; (11) at the surface of the stuffing due to low liquid impact; and (ill) inside the pump, due to The product's Ershi also forms a back pressure on the pump, reducing or eliminating the inflow of gas 1:: J 生 'It may be in some cases, especially in the presence of TE0S or

鹵化矽烷類時導致起泡。 A 一辦法可用來改善排出流處理系統之碳酸飼沈積問 繁::ΐ辦法,係利用磁化技術,其中補充水通過磁鐵。 弟一辦法,係使用pH控制系統。第三辦法,係使用石灰〜Foaming occurs when halogenated silanes. A method can be used to improve the carbonic acid feed deposition of the effluent treatment system: The method is to use magnetization technology, in which the supplementary water passes through the magnet. One method is to use a pH control system. The third method is to use lime ~

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五、發明說明(38) 蘇打灰管柱處理(軟化)補充水。第四辦法,係沈積滌氣器 上游之固體。 "° 「使用石灰-蘇打灰來軟化水係更完整敘於Pont ius,F. 水貝與處理」,第四版,麥克羅西爾書報公司1990年 3^ 9頁,說明硬度主要來自於硬地下水中存在為可溶性化 车物種之詞及鎂離子[例如破酸氫詞及 藉石灰'蘇打灰軟化,此種可溶性化學物種被轉 的=酸鈣及氫氧化鎂沈澱。 田同$存在有一因素時,通常遭逢碳酸妈沈殿問題。首 ΐ局ϊίΐ有大量溶解鈣。其次,接受處理的氣流含有V. Description of the invention (38) Soda ash column treatment (softening) make-up water. The fourth method is to deposit solids upstream of the scrubber. " ° "Using lime-soda ash to soften the water system is more fully described in Pont ius, F. Water shells and treatment", 4th edition, McRossier Books, 1990, 3 ^ 9 pages, stating that the hardness mainly comes from The words “solubilized car species” and magnesium ions are present in hard groundwater [for example, the term “hydrogen-breaking acid” and softened by lime 'soda ash. Such soluble chemical species are converted = calcium acid and magnesium hydroxide precipitation. When there is a factor in Tian Tong $, there is usually a problem with Shen Didian from carbonated mothers. The first bureau has a large amount of dissolved calcium. Second, the air stream being processed contains

::升同滌氣液之ΡΗ。此種pH升高又造成溶解鈣,以 邊又為碳酸飼。 /L 一具體例 磁鐵而予防 離子及粒子 止其黏附於 知,此等裝 以防止碳酸 沈積可能約 另一具體 於條氣系統 器單元之水 圖,若滌氣 取而代之 啜酸鈣於滌氣系 τ 、 ...............·/从J柯街補兄水通過 磁鐵用來於進入條氣器之前,對齊碳酸舞 二,$離子及粒子本身對齊,而以電力方式防 /木氣裔腔室之内部表面。磁化裝置為業界已 置可根據本發明配合適應排出氣流條 =其它沈積物種之條氣液沈積,此=種先的 =^阻礙務氣液(如水)經由磁化區段而通過。 :’經由控制滌氣液溶液之pH可防止碳酸鈣 槽ί : ΐ 人可:”圖、8為碳酸鈣沈澱呈(滌氣 戽氣”貝,夜之)水槽pH之函數之曲線 ’之維持低於pH約8. 5則碳酸鈣不會沈澱。、、 如圖9所示,形成碳酸氫鈣,圖9為二氧化碳:: Same as P & G of Polyester Liquid. This increase in pH causes dissolution of calcium, which is followed by carbonation. / L A specific example of a magnet is to prevent ions and particles from adhering to each other. These devices to prevent carbonic acid deposition may be about another water map specific to the air conditioning system unit. τ, ............... / The water from J Kejie is used to align the carbonic acid dance with the magnet before entering the air purifier, and the ions and particles are aligned, and Electrically guards the interior surface of the woody cavity. The magnetization device has been installed in the industry and can be adapted to the exhaust gas flow according to the present invention. Strip = other deposition species of gas-liquid deposition. This = the first type = ^ hinder the flow of gas and liquid (such as water) through the magnetization section. : 'The calcium carbonate tank can be prevented by controlling the pH of the solution of the scrubbing gas solution. :: ΐPerson: "Figure, 8 shows the precipitation of calcium carbonate as a function of the pH of the trough (purification gaseous gas) shell, night.' Below pH about 8.5, calcium carbonate will not precipitate. As shown in Figure 9, calcium bicarbonate is formed, and Figure 9 is carbon dioxide

t _(水溶液)、HC(V(水溶液)及水溶 ^ 千'主入系統(麥考圖7)。任何適當化學。tb可田认 控制PH值,包括例如酸,如硫酸及鹽酸。〜可用於 介防積可藉由膝氣單元上游的蘇氣 石::防止。例如滌氣器單元之補充水可通過含 又另H的!柱。通過管柱時,鈣沈殿為碳酸鈣。 凝腔室沈澱或絮凝鈣而予防止。纟::土將補充水通過絮 學添加劑,如氟化鈉,來 1至内部中,使用化 外,可使用氮氧化鈉進容性氣化飼。另 竣氣通入腔室内部。二;以:一’同時將二氧化 離子,然後鈣盥C〇 2- ¥人y I軋肢於鹼性溶液被轉成C032- 有關前述固體形成與阻塞-欠鈣。 問題,小型沖洗用惰性氣礼r,統之壓力感測埠口的 氣體於適當壓力及流速流=犀2,氣,可用來經由使惰性 埠口不含固體沈積物。此Ζ ς刀感測埠口而維持壓力感測 裝置加諸背壓,因為如此二,需夠低而不會對壓力感測 氣流需夠大,俾便對抗任和以成壓力讀值不準確。但沖洗 粒通入壓力感測埠口。惰Z =在的可冷凝氣體擴散,或顆 時也被加熱,如此可 /洗氣體於存在有可冷凝氣體 也希望減少~條4器系=形成固體。 言,加熱入口氣體輸 口出現固體。就此方面而 s為有幫助的,原因在於其可輔助t _ (aqueous solution), HC (V (aqueous solution) and water-soluble ^ thousand 'main input system (Micau Figure 7). Any appropriate chemistry. tb can be identified to control pH, including for example acids such as sulfuric acid and hydrochloric acid. ~ Available In the medium prevention product, you can use the Su gas stone upstream of the knee air unit :: Prevent. For example, the makeup water of the scrubber unit can pass through the H column! The calcium sink is calcium carbonate when passing through the column. Precipitation or flocculation of calcium in the chamber is prevented. 纟 :: The soil will supplement the water with flocculent additives, such as sodium fluoride, to the inside, and for external use, sodium nitrate can be used for capacitive gasification feed. The air passes into the interior of the chamber. Two: One: At the same time, the dioxide ion, and then calcium ions C02— ¥ person y I roll the limbs in alkaline solution to C032- about the formation of the aforementioned solids and blockage-undercalcium The problem, small inert gas is used for flushing. The pressure of the port gas at the proper pressure and flow rate is equal to 2%. The gas can be used to make the inert port free of solid deposits. Measure the port and maintain the pressure sensing device to put back pressure, because it is so low, it needs to be low enough to prevent pressure The sensing airflow needs to be large enough, so that the reading value is not accurate. However, the flushing particles pass into the pressure sensing port. The inertia Z = the condensable gas is diffused, or the particles are also heated. / Wash gas in the presence of condensable gas is also expected to reduce ~ bar 4 device = solid formation. In other words, a solid appears in the gas inlet of the heating inlet. In this regard, s is helpful because it can assist

止。 本發明 可解除先 問題。本 接著為質 衡與理想 管柱於第 氣效率。 流動管桎 流流動管 吕午 口 j 經由利 用量下達 此乃有關 展。 此外, 之顆粒及 速以及Γ 效洗務效 較小的直 速。此種 使用時的 柱保護, 可冷凝氣體於氣相中,直至 礼肢進入滌氣器為 j另一特徵方面係有關二階 前技術排出氣流處理夺二式滌氣器系統,其 發明之二階段式條氣==單-務氣器單元 亨利法則表現,但;接近方法,以平 一管柱中提供亨利法則所限制:二隨後質量移轉 =單純使用同流平衡管 士:額外梅 於低水流速時達成的高效::f狻付使用逆流 柱,柱高度要求顯然高於言如此,使用逆 的高度,π,管柱較高而I法:f ’例如半導體 用平衡管才主,接著使用質量;:於設備内部。 到可接受的總柱高以及優里2官柱可於低水 本發明之此種二階段式務氣“===進 廣口」桶構造,以提供於 t 南水流 能。第二π裔。初步氣體滌氣操作的有 徑以及比』、:Γ 70的質量移轉管柱具有相對遠 器單元相對… 心相:Λ 特性本身通常指示管柱對 故;本:: 於質量移轉管柱受上游平衡管 ;χ之一階段式滌氣器系統可避免此種問stop. The present invention solves the prior problem. This is followed by mass balance and ideal string efficiency. Flow tube 桎 Flow tube Lü Wukou j Released through utilization This is a related exhibition. In addition, the particles and speed as well as the Γ effect are less direct. This kind of column protection during use can condense the gas in the gas phase until the ceremonial limb enters the scrubber. Another characteristic aspect is related to the second-stage pre-technology exhaust airflow treatment of the second scrubber system. The second stage of its invention The type of gas == single-air valve unit Henry's law performance, but; approach method, limited by the Henry's law provided in a flat string: two subsequent mass transfer = pure convection balancer: extra plum water The high efficiency achieved at the flow rate :: f 狻 uses a counterflow column. The column height requirement is obviously higher than that. Using the reverse height, π, the column is higher, and the I method: f 'For example, the semiconductor balancer is used, and then use Quality ;: Inside the equipment. The acceptable total column height and the Yuli 2 official column can be used in low water. The two-stage service gas “=== into the wide mouth” barrel structure of the present invention provides water flow in the south of t. Second pi. The diameter and ratio of the preliminary gas scrubbing operation are as follows: The mass transfer pipe string of Γ 70 has a relatively remote unit relative ... Phase: Λ The characteristic itself usually indicates that the pipe string is wrong; this: the mass transfer pipe string Affected by upstream balance tube; χ one-stage scrubber system can avoid such problems

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五、發明說明(41) 題。 ,:本發明之^皆段式蘇氣器系統包括第—務氣器階 段、包含-填基官柱,其中排出氣流與務氣介質同流, 向下方向=經管柱。於填塞管柱略微上方可設置循 %=,例如旋轉贺霧穀’如此來自務氣器水槽的水 以南速循環。此管柱用來去除大部分酸氣以及酸氣以外的 水y條氣氣體,也去除多種存在於進氣氣流或由於進氣與 滌氣為、的水反應形成的固體。 :^器第一階段用來去除指定的氣體物種的去除效率隨 二=1及補充水流速決定,其可經由改變個別流速以及決 ,去:速率及去除程度,而無需經過*當的實驗便可決 決定可獲得職器第—階段單元之預定效率的氣 體及/條氣液流速。 ::1段滌氣器單元,經部分處理的氣體流至第二階 :ri i:盗’於該處非期望的成份濃度進-步降低。所謂 士」官柱為一豎管,其中氣體係以逆流方式通過其 ;第=;=遠比ΐ 一階段管柱更小。較小管柱尺寸比 Ψ ^β可以遠更低的水流速適當濕潤填塞物。要 i二,故新鮮補充水可用於此項㈣。管柱效 劑或大量新::階段式滌氣器系統而無需使用化學注入 階二階段式水務氣器比較習知單- 式設計可獲得;荖η。用於指定補充水流速’二階段 又仟顯耆較向的滌氣效率。它方面,若要求指定 88122031.ptc 第46頁 492891 _案號 88122031_年月日__ 五、發明說明(42) 效率,則二階段式設計許可補充水流速顯著降低。最後, 二階段式配置許可滌氣器系統比較單一階段式滌氣器系 統,接受較高的氣體挑戰,同時維持相等效率及補充水流 速。 二階段式滌氣器系統中,比較單一階段式滌氣器設計, 第二階段可提高滌氣效率,同時使用較低補充水流速。使 用拋光滌氣器可免除需要化學注入劑,其典型需要化學注 入劑,俾便達成二階段式滌氣器系統方便完全的效率結 果。 先前技術之單一階段式條氣器系統於本發明之二階段式 水滌氣器系統用於條氣敗氣之代表性比較例中,含氟i氮流 於個別系統利用水滌氣處理。性能資料示於下表B。V. Description of the Invention (41). : The ^ all-stage type aerator system of the present invention includes the first-aerator stage and includes a foundation-filling official column, in which the exhaust gas flows with the aerogenous medium in the same direction, and the downward direction = the pipe column. A cycle% = can be set slightly above the stuffing pipe string. For example, the rotating Hewu Valley ’recirculates the water from the air tank of the air heater at a south speed. This column is used to remove most of the acid gas and water and gas other than acid gas. It also removes a variety of solids that are present in the intake air stream or due to the reaction between the intake air and the scrubbing gas. The removal efficiency of the first stage to remove the specified gas species is determined by two = 1 and the flow rate of the make-up water. It can be changed by changing the individual flow rate and the rate of removal: the rate and degree of removal without having to go through a proper experiment The gas and / or gas-liquid flow rate at which the predetermined efficiency of the stage-stage unit of the device can be determined can be determined. :: 1 stage scrubber unit, the partially processed gas flows to the second stage: ri i: stolen ', where the concentration of undesired components is further reduced. The so-called official column is a standpipe in which the gas system passes through it countercurrently; the first =; = is much smaller than the first-stage tube. Smaller column sizes than Ψ ^ β can adequately wet the packer at much lower water flow rates. To i, fresh fresh water can be used for this. Column effector or a large number of new :: stage scrubber system without the need for chemical injection Stage two-stage water gas scrubber comparison of the conventional single-type design is available; 荖 η. It is used to specify the supplemental water flow rate 'two stages and it also shows the more efficient scrubbing efficiency. In terms of it, if it is required to specify 88122031.ptc page 46 492891 _ case number 88122031_ year month day__ V. Description of the invention (42) Efficiency, the two-stage design permits the replenishment water flow rate to be significantly reduced. Finally, the two-stage configuration allows the scrubber system to accept a higher gas challenge than a single-stage scrubber system while maintaining equal efficiency and supplemental water flow rates. In the two-stage scrubber system, compared to the single-stage scrubber design, the second stage can improve the scrubbing efficiency while using a lower make-up water flow rate. The use of polishing scrubbers eliminates the need for chemical injectants, which typically require chemical injectants, and thus achieves the convenient and complete efficiency results of a two-stage scrubber system. In the representative comparative example of the single-stage stripper system of the prior art used in the two-stage water scrubber system of the present invention for stripped gas failure, the fluorine-containing nitrogen stream was treated with water scrubber in individual systems. Performance data are shown in Table B below.

表 B 單一階段式水滌氣器 補充水 (GPM) 總氮 (s1 pm) 化學注 入? it進氣 (s 1 pm) 當量排氣(氟 化氫)(ppm) 1.2 80 否 0. 5 10. 5 1. 2 80 是 0. 5 69. 5 0. 5 80 是 3. 0 745· 5Table B Single stage water scrubber Makeup water (GPM) Total nitrogen (s1 pm) Chemical injection? it Intake (s 1 pm) Equivalent exhaust (hydrogen fluoride) (ppm) 1.2 80 No 0. 5 10. 5 1. 2 80 Yes 0. 5 69. 5 0. 5 80 Yes 3. 0 745 · 5

88122031.ptc 第47頁 492891 m, 881220^1 五、發明說明(43) 二階段式水滌氣^ 補充水 總氮 化學注Τ' (GPM) (s1 pm) 入? 0. 75 80 否— 0. 75 80 否 0. 75 80' -— 0.75 2 3 0 ^ —------ 0. 75 2 3 0 ^ 一—--—. 是 氟進氣 (s1 pm ) 0· 5. 當量排氣(氟化 氫)(ppm ) 4. 前述資料顯示由二階段式★仪# / 低水消耗要求的改良。 〉“益糸統達成的氟減除與 特定^體例中,二階段式滌氣器系統之第一階段包含填 塞柱’其具有直徑21叶及高則,透過該管柱 程工具所排^之廢氣係、以同流方式通過。第二階段管柱具 ^ S'及Λ18吋’比較第—階段管柱許可使用遠更低 ===此設計為填塞物之適當濕潤可以水流速 U二ΐ因此新鮮補充水可用於此項目的。 器’其輔助提高拋光務氣器效果。内襯也作弟為1:先2 納,光務氣器的填塞材料。此種設計特點於需要清潔時, J谷易移開且更換拋光滌氣器。泣匕外,該設 氣器容易改型為配合業界原有的單―務氣器系統午了抛h條 圖1 〇為使用拋光滌氣器時(比較缺拋光滌氣器 統),氨排氣濃度減低呈水流速(以每分鐘加命表示 49289188122031.ptc Page 47 492891 m, 881220 ^ 1 V. Description of the invention (43) Two-stage water scrubbing ^ Supplemental water Total nitrogen Chemical injection T '(GPM) (s1 pm) Into? 0. 75 80 No — 0. 75 80 No 0. 75 80 '-— 0.75 2 3 0 ^ —------ 0. 75 2 3 0 ^ One —-- —. Is fluorine inlet (s1 pm ) 0 · 5. Equivalent exhaust gas (hydrogen fluoride) (ppm) 4. The foregoing information shows the improvement of the two-stage type ★ instrument # / low water consumption requirements. 〉 "In the fluorine reduction and specific system achieved by the Yitong Group, the first stage of the two-stage scrubber system includes a packing column, which has a diameter of 21 leaves and a high rule, and is arranged through the column-pass tool. The exhaust system passes through the co-current method. Compared with the second stage, the pipe string has ^ S 'and Λ18 inches'. Compared with the first stage, the permissible use of the pipe string is much lower. Therefore, fresh make-up water can be used for this project. It's an aid to improve the effect of the polishing server. The lining is also used as a filling material for the first: 2 nanometers. The design feature of this server is when cleaning is needed, J Gu easy to remove and replace the polishing scrubber. In addition to crying, the air cleaner is easily retrofitted to match the industry's original single-air purifier system at noon. Figure 1 10 is when a polishing scrubber is used. (Compared with the lack of polishing scrubber system), the decrease of ammonia exhaust gas concentration is a water flow rate

案號 88122031 五、發明說明(44) 數之改良因數之曲線圖。曲線圖顯示拋光 充水流速=,τ降低氨氣排放濃度達11〇倍” 有拋光滌矾窃的對應滌氣器系統)。此外, 子 單-階段式i氣器系統的三分之—的補 ,=應 器可降低氨氣排放濃度高達因數3〇。 I先私乳 拋光蘇氣器之高度優異的選擇性設計特 =器’例如直徑",同時拋光編使用的填口 料元件直徑為】对。管柱直徑對填塞物直徑比;^基' 用大拇指設計法則提示此比值未始 值寻於4白 .,n , c m木曰小於8且比值較佳5少 ί二/理由在於小比值可加速務氣液向下沿管柱二 之溝,、’原、因在於壁之空隙空間比較管柱 二柱二 隙空間為不成比例地更大。 貝斤見二 壁内襯可用於拋光管柱, 制壁形成溝槽,因而達成良: = ; = 同時抑 由於系統的壓降限制無法單純使匕方面而言 前述溝槽/分路現象。平$便用較小填基物大小來克服 它多孔ΐ ::本發明之壁内襯包含-袋、網、籃或其 其中。藉此方二 可接受處理的氣體以及滁氣液流經 /液接觸出現Λ,、内:見,可透氣性及可透液性,且許可氣 -具體例中襯内』的填塞物表面。 成,例如聚乙悚?可由惰性材#,例如惰性聚合物所形 等,玻填聚風’聚氣乙缚,聚碳酸醋 氣器與其構上適合形成内概且於拋光滌 煲用的材料不具有化學活性的材料所製成。Case No. 88122031 V. The curve of the improvement factor of the (44) number of the invention. The graph shows that the polishing water-filled flow rate =, τ reduces the concentration of ammonia emissions by up to 11 times "corresponding to the scrubber system with polished polyester alumina). In addition, the sub-single-stage i-gas system-one third Compensation, the reactor can reduce the concentration of ammonia gas emission by up to a factor of 30. I The first high-quality selective design features of the first milk polishing aerator, such as diameter, and the diameter of the filler material used for polishing and knitting. =]. The ratio of the diameter of the column to the diameter of the stuffing; ^ Base 'Use the thumb design rule to indicate that the value of this ratio is not found in 4 white, n, cm is less than 8 and the ratio is better than 5. The reason is that A small ratio can accelerate the downflow of gas and liquid along the second ditch of the pipe string. The reason is that the void space of the wall is disproportionately larger than that of the second string of the pipe string. Beckham sees that the two wall lining can be used for Polishing the pipe string and forming grooves on the wall makes it good: =; = At the same time, the above-mentioned groove / shunt phenomenon cannot be achieved simply because of the pressure drop limitation of the system. The smaller the size of the filler To overcome its porous ΐ :: the wall lining of the present invention contains-bags, nets, Or one of them. In this way, the gas that can be processed and the gas-liquid flow through / liquid contact appear Λ ,, inner: see, breathable and liquid permeable, and allow gas-lined in the specific examples " The surface of the stuffing material, for example, polyethylene, can be formed by an inert material, such as an inert polymer, etc. The glass is filled with polymer, and the polycarbonate is suitable for forming an internal structure and polishing. The materials used for the pot are not made of chemically active materials.

第49頁 492891Page 49492492

88122031.ptc 第50頁 飞7厶0夕丄 飞7厶0夕丄 ^^88122031 五、發明說明(46) ^^^-._1— 锋正_ 以提供條氣系統之高度有 器時出現前述氣體分路紅作,其防止應用於拋光滌氣 圖11為根據本發明之一軋之壁效應。 60 0之示意代表圖,向紅/、體例之壁内襯與填塞物總成 由十字交又股線元件_ =眼㈣2 ’具有開口604 ’係 製成該聚合物材料於|’股線係由適當聚合物材料 眼袋60 2含有一定質量"'之^條_件下可保有其結構完整性。網 可設置上端封閉处構1丨〇填基兀件6 0 8。如所示,網眼袋也 構,因此網眼袋^便夢’例如彈簧偏位夾61 2及帶61 4結 填塞元件6 0 8可呈右3彳閂鎖或解除閂鎖彈簧夾而開閤。 塞元件可為環形、鞍形、7 ^為優異或有用決定。例如填 及/或不規則形式,如走八形、圈餅形或其它幾何規則 其它市售填塞材料。填塞";y皮爾環、一拉席革環或任何 性,因而可逵成收# 4σ' ;、父l具有高表面對容積比特 壁内襯於填塞物魄成以八 筏觸之同度有效作用 對於滌氣I i ^ " 刀解關係顯不於圖1 1,圖11係相 安!Γ 70谷器616之上部顯示,此處壁内襯係活動式 70。?示為意根代據表本圖發明之-具體例之二階段式滌氣器系統 二階段式滌氣器系統包含一 圍一含有膝氣器介質床704之/ &乳/容器7〇2,其包 示為填塞材料之「疏鬆」床 預雖然於較佳形式顯 入物形成氣/液接觸用之填一預』床可設置活動式欣 真基材枓床。床704係設置於支架88122031.ptc Page 50 Flying 7 厶 0 夕 丄 Flying 7 厶 0 夕 厶 ^^ 88122031 V. Description of the invention (46) ^^^ -._ 1— Fengzheng _ The above occurs when the height of the gas system is provided Gas branch red crop, which prevents the application of polishing scrubbing Figure 11 is a wall effect rolled according to one of the present invention. Schematic representation of 60 0, the wall lining and stuffing assembly of the red /, system are made of cross-shaped strand elements _ = eye ㈣ 2 'with an opening 604' is made of the polymer material in the '' strand system The eye bag 60 2 made of a suitable polymer material contains a certain amount of quality and can maintain its structural integrity. The net can be set at the upper closed structure to fill the base element 608. As shown, the mesh bag is also structured, so the mesh bag ^ 梦 dream 'such as the spring biasing clip 61 2 and the strap 61 4 knot stuffing element 6 0 8 can be opened and closed by latching or unlatching the spring clip. The plug element can be ring-shaped, saddle-shaped, and is excellent or useful. For example, filling and / or irregular forms, such as octave, doughnut or other geometric rules. Other commercially available stuffing materials. Packing " y Pierre ring, a Raschig ring or any other, so it can be harvested # 4σ '; the parent has a high surface to the volume bit wall lined with the stuffing body to form an effective effect with the same degree of eight rafts For the scrubbing I i ^ " The knife solution relationship is not as shown in Figure 11 and Figure 11. The upper part of Figure 70 is shown in the upper part of the 70 valley 616. Here, the wall lining is a movable 70. ? The two-stage scrubber system according to the invention-specific example of the present invention is shown on the basis of this figure. The two-stage scrubber system includes a circumference of a knee bed containing a media bed 704 / & milk / container 7〇2 The "loose" bed which is shown as a packing material is a bed which can be used for gas / liquid contact in the form of a better form of display material. A movable Xinzheng substrate bed can be set. Bed 704 is set on a stand

88122031.ptc 第51頁 ^289188122031.ptc Page 51 ^ 2891

上夕上支架包含格柵、網眼、篩網或其它適當多孔件, f多孔件可牢固固定於容器7〇2内壁且於結構I夠強韌可 2填塞材料床。典型第一滌氣器容器含有—床填塞材料 而無任何内襯或袋。 ,填塞材料床7〇4之上方為頂上空間706,其接收待處理 、氣肢 3氣體係來自上私處理設備7 1 4,例如半導體處 理廠,由該處排出氣流於管線716流至滌氣器容哭7〇2&,处以 進氣裝置718被導入容器之内容積。排出氣^於流經 &線71 6時由加熱元件720加熱,例如為了更有效減除石夕 藉此配置’來自上游設備的氣體向下流經填塞材料床, =流至下方壓力通風空間7〇8,及由滌氣器容器^〇2排放入 官線7 6 0。排放管線7 6 0藉配件7 4 2接合至滌氣器容器7 〇 2之 ^ 〇 "° 的 所壓力通風空間708也界定一槽710,用以收集液態滌氣介 質71 2,例如水性介質。由槽71 〇,液體利用管線γ 2 2循 環,管線722藉配件724接合至容器702之壁。管線722使滌 氣液流至幫浦7 2 6,幫浦排放液體至循環管線7 2 8,由該處 流入驅動模組73 0,驅動模組係驅動式偶聯至中空轴732, 中空軸又接合至穀7 36,穀有壁734且該壁734配置有牢固 固疋於其上之贺霧喷嘴7 3 8。如此驅動模組使務氣液由管 線7 2 8流動,視需要藉接合至此種液體之適當來源(圖中未 顯示)之來自管線7 7 0之補充水擴大,流經中空軸7 3 2之壁 734及喷嘴738,用以喷霧分布於袋704之填塞材料床。驅On the eve, the bracket includes a grille, a mesh, a sieve, or other appropriate porous parts. The f porous parts can be firmly fixed to the inner wall of the container 702 and are strong enough in the structure I. 2 The packing material bed. A typical first scrubber container contains—bed stuffing material without any liner or bag. Above the stuffing material bed 704 is the overhead space 706, which receives the to-be-processed, gas-limb, and three-gas systems from the private processing equipment 7 1 4 such as a semiconductor processing plant. The device cried 702 &, and the air intake device 718 was introduced into the inner volume of the container. The exhaust gas is heated by the heating element 720 when it passes through the & line 71, for example, in order to more effectively eliminate Shi Xi, so that 'the gas from the upstream equipment flows down through the packing material bed, = to the pressure ventilation space below 7 〇8, and discharged from the scrubber container ^ 〇2 into the official line 760. The exhaust line 7 6 0 is connected to the scrubber container 7 through the fitting 7 4 2 and the pressure ventilation space 708 of ^ 2 of the ° also defines a groove 710 for collecting a liquid scrubbing medium 71 2 such as an aqueous medium. . From the groove 71 °, the liquid is circulated using the line γ 2 2, and the line 722 is joined to the wall of the container 702 by the fitting 724. Line 722 allows the scrubbing liquid to flow to pump 7 2 6 and the pump discharges liquid to circulating line 7 2 8 from where it flows into drive module 73 0, which is drivingly coupled to hollow shaft 732 and hollow shaft In turn, it is joined to the valley 7 36, which has a wall 734 and the wall 734 is provided with a fog nozzle 7 3 8 firmly fixed thereto. In this way, the driving module causes the service gas to flow from the line 7 2 8. If necessary, the supplementary water from the line 7 7 0 is connected to an appropriate source of this liquid (not shown in the figure), and flows through the hollow shaft 7 3 2. A wall 734 and a nozzle 738 are used to spray the packing material bed distributed over the bag 704. drive

IIIIII

m » ns _1臓 ill m i fl! ill 88122031.ptc 第52頁 492891 案號 88122031 修正 五、發明說明(48) 動模組同時於圖1 2以箭頭R所指示方向旋轉主軸。若存在 有拋光滌氣器,則補充水較佳排它地流至拋光滌氣器%原 因在於如此可得最佳滌氣能力;管線7 7 〇含有由拋光務、 器7 6 8所排放的液體。 T + 管線770之補充水可選擇性通過磁化區段796,以防止碳 酸鈣於滌氣器系統沈積。另外,區段796包含ρΗ調整區 I又’處理(軟化)條氣液之石灰—蘇打灰管柱,或沈殿區 段,其中鈣及鎮藉適當處理或由滌氣液沈澱出,因此於務 氣器腔室上游之滌氣液的鈣及鎂被消耗。m »ns _1 臓 ill m i fl! ill 88122031.ptc page 52 492891 case number 88122031 amendment 5. Description of the invention (48) The moving module rotates the main shaft at the same time as indicated by arrow R in Fig. 12. If there is a polishing scrubber, the make-up water preferably flows exclusively to the polishing scrubber% because the best scrubbing capacity is obtained in this way; the line 7 7 〇 contains the discharge from the polishing service, the device 7 6 8 liquid. The make-up water of T + line 770 can be selectively passed through the magnetization section 796 to prevent the deposition of calcium carbonate in the scrubber system. In addition, the section 796 contains a lime-soda ash column, or a Shendian section, in which the ρ adjustment zone I is used to process (soften) the gas-liquid, in which calcium and calcium are properly treated or precipitated from the scrubbing liquid, so Calcium and magnesium of the scrubbing liquid upstream of the air cleaner chamber are consumed.

如此液態滌氣介質於滌氣容器7 0 2中並相對於氣體同流 流動關係向下流。如此,大半酸氣以及酸氣以外之水可條 氣氣體可由接受處理的排出氣流中去除5以及此種氣體中 之許多固體將同時藉滌氣操作去除。 然後於第一滌氣容器7 02藉滌氣處理的排出氣流於管線 7 60流至第二滌氣容器744。第二滌氣容器有一袋746,其 中含有填塞材料,如就此處圖11所述。In this way, the liquid scrubbing medium flows downward in the scrubbing vessel 70 2 with respect to the co-current flow relationship of the gas. In this way, most of the semi-acid gas and water and gas other than acid gas can be removed from the exhaust gas stream to be treated5 and many solids in this gas will be removed simultaneously by scrubbing operation. Then, the exhaust gas treated by the scrubbing gas in the first scrubbing container 70 2 flows to the second scrubbing container 744 in a line 7 60. The second scrubbing container has a bag 746 containing a stuffing material, as described herein with reference to FIG.

需瞭解,第二滌氣容器744具有可免除需要填塞材料之 袋746的大小及維度特徵,以及本例之床可由疏鬆填塞材 料製成。例如前述材料,但若床具有小直徑,則所示之袋 可提供壁接觸結構,其防止惡名昭彰的分路及溝槽表現, 该專表現將造成氣體的務氣處理不足,且產生適當流體動 力學表現而可確保拋光滌氣操作之效率高。 第二滌氣容器之填塞材料製成之袋746設置於支持結構 748上,支持結構可屬第一滌氣容器使用的相同或類似類It should be understood that the second scrubbing container 744 has the size and dimensional characteristics of the bag 746 which can eliminate the need for stuffing material, and the bed in this example can be made of loose stuffing material. For example, the aforementioned materials, but if the bed has a small diameter, the bag shown can provide a wall contact structure that prevents the notorious shunt and groove performance, which will result in inadequate handling of the gas and produce an appropriate fluid The dynamic performance can ensure the high efficiency of polishing scrubbing operation. A bag 746 made of the stuffing material of the second scrubbing container is disposed on the supporting structure 748, and the supporting structure may be the same or similar type used in the first scrubbing container.

88122031.ptc 第53頁 案號 88122031 五、發明說明(49) ,。,鮮滌氣液被導引至管線740内部之滌氣容器744上 部,官線可接合至適當滌氣液來源(圖中未顯示)。管線 7Γ/、Λ氣Λ可選擇性流經磁化區段798,#制或消除碳酸 鈣於滌氣糸統的沈積。 石=外/Λ^798包含邱調整區段,處理(軟化)務氣液之 拽ί 士,灰官柱,或沈殿區段’其中舞及鎮利用適當處 :由滌軋液沈澱出,使滌氣液於滌氣器腔 不含鈣及鎂。 丁议®工 蘇利用分散裝置而分布於第二ι氣容器之上内容 j;刀布衣置例如就第一容器所示,但第二容器直 用於液體導入目的。 早贺頭或賀嘴即足夠 ^ !"746 ^ ^ ^ ^ ^ ^ * t 導引至六哭內:4的軋體。如此來自管線760之氣體被 ^ 谷積下部,且向上流經袋7 4 6之填充材料 進行緊密氣/液接觸用以務氣氣體。46之真充材抖而 如此條氣後的氣體诵 放於含鼓風機766的管^線至7二^彳^\内谷積上部,/且被排 理後的氣體,以及克服5雕 仃攝取來自系統之處 外,可使用蟹1 克服吼肢處理關聯的上游壓降問題。另 以:::,、風扇、射出器、導4 滌氣液ii ift Μ A 末執仃氣體由處理系統的排放。 7BS,# ^ ^ ^ - ^4 Τ „ 環利用,例如、作;積補V?r步接受處理,及/或於系統揭 為補充水流至管線770供隨後導入第—務88122031.ptc page 53 case number 88122031 V. Description of the invention (49). The fresh scrubbing liquid is guided to the upper part of the scrubbing container 744 inside the pipeline 740, and the official line can be connected to an appropriate scrubbing liquid source (not shown in the figure). The pipeline 7Γ /, Λ gas Λ can selectively flow through the magnetization section 798, # to make or eliminate the deposition of calcium carbonate on the polyester gas system. Shi = Wai / Λ ^ 798 contains Qiu adjustment section, which handles (softens) the service gas and liquid drags, shi, guanguanzhu, or Shendian section, where the dance and town use the appropriate place: precipitation from the polyester rolling solution The scrubbing liquid does not contain calcium and magnesium in the scrubber cavity. Ding Yi® Industrial Suspension uses a dispersing device to distribute the contents on the second gas container j; knife cloth clothing is shown in the first container, but the second container is directly used for liquid introduction purpose. It's enough to have a head or mouth early ^! &Quot; 746 ^ ^ ^ ^ ^ ^ ^ * t leads to the rolling body in Liu Cui: 4. In this way, the gas from the line 760 is trapped in the lower part, and the filling material flowing up through the bag 7 4 6 is brought into tight gas / liquid contact for gas. The true filling material of 46 is shaken and the gas after such a chant is placed on the pipe containing the blower 766 to the upper part of the inner valley, and the gas after being drained, and overcomes the intake of 5 eagles Outside of the system, Crab 1 can be used to overcome the problem of the upstream pressure drop associated with howling limbs. In addition, the ::: ,, fan, ejector, and guide gas cleaning liquid ii ift Μ A discharge gas from the treatment system. 7BS, # ^ ^ ^-^ 4 Τ „Recycling, for example, to make; product supplement V? R step to receive processing, and / or the system to replenish the water flow to line 770 for subsequent import

88122031.ptc 第54頁 492891 修正88122031.ptc Page 54 492891 Correction

---£^,88122031_年月曰 五、發明說明(50) 氣器容器。 選擇性磁化區段79 6及798包括任何適當磁化裝 C 5 0 0物理水調理器(依薩森g s a & c s 〇 n)企業公司 例女 塔克頓)及舒福德克(s〇phTec)國際公司(加州 加、,州^ 以商品名舒福德克出售的磁化系統。 ,土合果薩 Μ述二階段式滌氣器系統可高度優異地減少 % 理設備的乾淨水用量。進-步,系統涉及多個氣肩 免除需要化學處理,如此達成業界的顯著進展,;, 效滌氣處理而無顯著水需求, 口 行琴--- £ ^, 88122031_ Year of the month V. Description of the invention (50) Air container. The selective magnetization sections 79 6 and 798 include any appropriate magnetized C 5 0 0 physical water conditioner (Isason gsa & cs 〇n) (such as the female company Tucton) and Suffolk (sophphec) International The company (California, California, State ^ Magnetizing system sold under the trade name Suffolk.) The two-stage scrubber system of the soil-recycling system can highly reduce the amount of clean water used in processing equipment. Further, the system involves Elimination of multiple gas shoulders requires chemical treatment, thus achieving significant progress in the industry; and efficient gas treatment without significant water requirements, harmonica

高操作成本。 便用化予。口日寸所關聯, 另一種可用於替代或額外使兩一袋,其含有小 滌軋益之填裝材料,係用以減弱分路或溝槽 ^High operating costs. They use Huayu. Related to the mouth size, the other can be used instead of or in addition to two bags, which contains filling materials for small polyester rolls, which are used to weaken the branch or groove

=些例子中,希望於膝氣容器之至少部分内壁供 抓肢流瓦解器結構,例如圖丨2之滌氣器容器了44内壁面 t顯示的凸部79 0。流瓦解器結構可呈任何適當形式例如 才干’凸塊’凸部,鉤,一體成形的壁凸部(例如藉軋花内 土面形成),肋,將壁刻劃,埋粗粒於壁,金屬器具銅焊 或硬焊至内部結構’纖維或桿附接至壁面等。此種瓦解器 結構將改變流體流於滌氣器容器壁的邊界層,以及重新導 引壁的流體流返回床的主體容積。 ,至於圖12系統之又另一特徵方面,於管線76〇由第一滌 氣裔單兀70 2流至第二祿氣器單元744之排出氣流可由管線 747被導入乾淨乾空氣或其它適當氣體。此種導入乾淨乾 空氣有利於減除排出氣流之非期望的成份例如矽烷,特別In some examples, it is desired that at least part of the inner wall of the knee air container be provided with a limb flow disintegrator structure, such as the convex portion 79 0 shown on the inner wall surface 44 of the scrubber container in FIG. 2. The structure of the flow disintegrator can be in any suitable form such as talented 'bump' protrusions, hooks, integrally formed wall protrusions (for example, formed by ginning the inner soil surface), ribs, scoring the wall, and embedding coarse grains in the wall, Metal appliances are brazed or brazed to the internal structure 'fibers or rods are attached to the wall surface and the like. This disintegrator structure will change the fluid flow at the boundary layer of the scrubber container wall and redirect the fluid flow from the wall back to the main volume of the bed. As for another characteristic aspect of the system of FIG. 12, the exhaust air flowing from the first cleaning unit 702 to the second pump unit 744 at line 76, can be led to clean dry air or other appropriate gas by line 747. . This introduction of clean and dry air is helpful to eliminate undesired components such as silane from the exhaust air flow, especially

第55頁 492891 Λ 月Page 55 492891 Λ month

案號 88122031 五、發明說明(51) 當有氨存在於氣流時尤為如此。供此項目的之用,管線 747可接合至乾淨乾空氣或其它適當用於此項目的S、辟 來源(圖中未顯示)。 ;; 需瞭解雖然已經顯示及說明二階段式滌氣系統具體例, 但本發明之其它具體例可採用其中設置多於一個 ^六叩 及關聯的滌氣步驟。 *虱合裔 仰^ 2為根據本發明之另一具體例之進氣結構8 0 〇之剖面 832且龙示上進氣結構8〇〇包括一殼體802,其具有一外壁 Pi關在二較佳為筒形,以及與中間筒形壁834呈徑向方=隔 j關係而界定一環形容積836介於其間。外壁設置 埠口 860,好、, 丨土0又夏有進亂 的冷卻次”板供應來自適當來源(圖中未顯示)於管線862 外壁832也設置出氣埠口864,藉此埠口於内容 積836中循環的水可排放於管線86 6。 於内合 以置’冷卻水可被導引至環形内容積咖,用 雖缺_ ”中,且排放而維持進氣結構於預定溫度。 時同Ϊΐί以冷卻水說明,’需瞭解於希望加熱進氣結構 作傳熱介質?加熱水,且水以外的液體也可以此種方式用 士口戶y I、 * — 口 ,冷浴,中間壁834可被設置具有壁開口815,經此開 8 4 2。内^水可流至中間壁8 3 4與内壁8 3 8間的環形容積 壁854之^838向上伸展且止於環形空間836及842之邊界頂 8^8之上二方’ t此被導入環形容積842的液體可溢流出壁 *而’於前碩C指示方向流動,形成垂膜於氣體流徑Case No. 88122031 V. Description of the invention (51) This is especially true when ammonia is present in the gas stream. For this project, line 747 can be connected to clean dry air or other sources suitable for this project (not shown). It should be understood that although a specific example of a two-stage scrubbing system has been shown and described, other specific examples of the present invention may employ more than one ^ 叩 and associated scrubbing steps. * Lice combination ^ 2 is a cross section 832 of the air intake structure 800 according to another embodiment of the present invention and the upper air intake structure 800 includes a housing 802 having an outer wall Pi closed at two It is preferably cylindrical, and defines a circular volume 836 between the intermediate cylindrical wall 834 and a radial square = separation relationship. Port 860 is set on the outer wall. Well, the soil is cold and there are cooling times. The board is supplied from an appropriate source (not shown) on line 862. Outer wall 832 is also provided with air port 864. The water circulated in the product 836 can be discharged to the pipeline 86 6. The cooling water can be guided to the ring-shaped product product in the inner ring, and it is used to maintain the intake structure at a predetermined temperature. At the same time, I explained with cooling water, 'You need to understand that you want to heat the air intake structure as a heat transfer medium? Heat water, and liquids other than water can also be used in this way. The wall 834 may be provided with a wall opening 815, which opens 8 4 2 therethrough. The inner ^ water can flow to the annular volume wall 854 between the intermediate wall 8 3 4 and the inner wall 8 3 8 ^ 838 extends upward and stops at the two sides of the top 8 8 of the boundary of the annular spaces 836 and 842. The liquid in the annular volume 842 can overflow the wall * and 'flow in the direction indicated by the former C, forming a vertical film on the gas flow path

第56頁Page 56

案號 88122031 五、發明說明(52) 840之邊界壁838内面上。至於此種壁開口815的替代之 ,中㈤壁8 3 4彳由多孔材料形▲來許可液體滲透通過其 、至於又另一替代之這,水或其它液體可藉分開液體入 口或埠口(圖中未顯示)獨立供給環形容積842。 為了使溢流液體向下順著壁838之内面而刻成溝槽,設 置向下懸吊的凸緣壁844且由頂壁8 54向下延伸。 頂壁854又支持-向上伸展的筒形壁㈣,其上端藉頂壁 8 5 0封閉,如此形成内部的壓力通風空間8 7 〇,於該空間之 空氣、氮氣或其它氣體可於箭頭A指示方向導入進入壓力 通風空間870,及於箭豆胸示方向流入氣體流徑84〇。較 佳地,此種導入氣體為乾淨乾空氣。 項壁8 5 u入包圍進氣導管8丨4,其有一側壁8丨2接納來自 上游來源808,如半導體製造工具的製程氣體於管線81〇。 此種製程氣體含有待減除成份’進入側臂812的進氣導管 814 ’由導管流至環繞内容積83〇之主中段816。^申展 管818通過内容積830伸展至設置於氣體流徑84〇的下端 826。管818係由進氣導管814壁面874圍繞。 管81 8上端824藉管線822接合至乾淨乾空氣或其 氣體來源82 0。 措所述配,:進人管線81()且流經進氣導管814的排 體通過進氣導管内容積83〇 ’且於其下端排放,用以向下 * ^氣體㈣k840。若有所需,管線84〇流動的氣體可選擇 性藉設置用以加熱管線81〇的加熱元件811來加埶。 同時液體溢流出内·38之上端,形成氣體流徑所界定 88122031.ptcCase No. 88122031 V. Description of the invention (52) 840 The inner surface of the boundary wall 838. As an alternative to this wall opening 815, the middle wall 8 3 4 彳 is formed by a porous material ▲ to allow liquid to penetrate therethrough. As yet another alternative, water or other liquids can be separated by a liquid inlet or port ( Not shown) The annular volume 842 is supplied independently. In order for the overflow liquid to be grooved downwardly along the inner surface of the wall 838, a downwardly suspended flange wall 844 is provided and extends downward from the top wall 854. The top wall 854 also supports a cylindrical alcove extending upwards, whose upper end is closed by the top wall 8 50, thus forming an internal pressure ventilation space 87. The air, nitrogen or other gases in this space can be indicated by arrow A. It is introduced into the plenum space 870 in the direction, and flows into the gas flow path 84 in the direction indicated by the chestnut. Preferably, the introduction gas is clean dry air. The entry wall 8 5u surrounds the intake duct 8 丨 4 and has a side wall 8 丨 2 for receiving process gas from an upstream source 808, such as a semiconductor manufacturing tool, in line 81. This process gas contains the component to be depleted 'into the intake duct 814' of the side arm 812 and flows from the duct to the main middle section 816 surrounding the inner volume 83. ^ Shenzhan tube 818 extends through the inner volume 830 to the lower end 826 provided at the gas flow path 84. The tube 818 is surrounded by a wall surface 874 of the intake duct 814. The upper end 824 of the pipe 8 1 8 is connected to clean dry air or its gas source 8 20 by a line 822. The measures are as follows: The exhaust pipe entering the pipeline 81 () and flowing through the intake duct 814 passes through the inner volume of the intake duct 8300 'and is discharged at the lower end thereof for downward gas ㈣k840. If necessary, the gas flowing in line 84 can optionally be heated by a heating element 811 provided to heat line 810. At the same time, the liquid overflowed from the upper end of the inner 38, forming a gas flow path defined by 88122031.ptc

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第57頁 492891Page 57492492

或其它氣體被導入壓力通風空間87〇以及管818,而逾 案號 88122031 I 丨丨1 Iim 1111 I_ £、發明說明(53) 的壁8 3 8之内面上向下流動的液體膜。同時,乾淨乾处5 氣結構壁面且不接觸排出氣體,同時混合排出氣體與' =π 乾空氣或其它氣體’其對減除排出氣流的特定非期門: 有用。例如被導引入壓力通風空間87〇以及管818 f = 空氣可以大致減除排出氣體矽烷内容物之數量及速^遙乙 入。至於另-選擇性特點,進氣導管814 = 中未顯示)加熱。 、田衣置(圖 如此排出氣體於入口之氣體流徑84〇向下流,以 流至條氣糊4,其中可進行氣/;夜接觸而更進及向下 除排出氣流中的某些成份。 少特別減 進氣殼體802可藉熔接806或其它固定或牢固固 方ί =:件、“、配件等牢固固定於滌氣器;4 本毛月於各特被方面提供一種滌氣系統:利用 提升氟化氫及氟以及其它含鹵素化合物, 原 氣體之條氣效率,_制有害物種例如二I化物 成,方便配置,以破壞矽烷氣體物種;可減少滌 ^ 率及程度;可適當配置而防止碳酸約沈積=壓 力感車口阻塞,以及其它固體於滌氣系統形&勺八j T段式滌氣配置,其可顯著有效減少滌氣操作之水匕? ”:及免除或至少大致減低化學品的需求;里而 虱填基材料於容器結構,該容器結構可用於小直二 管柱,以防止分路及溝槽作用, &烏軋為 率。 汉連烕问軋/液接觸效Or other gas is introduced into the plenum space 87 and the pipe 818, and the liquid film flowing downward on the inner surface of the wall 8 3 8 of the invention description (53) is described in Case No. 88122031 I 丨 丨 1 Iim 1111 I_. At the same time, clean the dry wall of the 5 gas structure without contacting the exhaust gas, while mixing the exhaust gas with '= π dry air or other gases', which is useful for certain non-periodic doors that reduce exhaust gas flow: For example, the introduction into the plenum space 87 ° and the tube 818 f = air can substantially reduce the amount and speed of the exhaust gas silane content. As for the other-selective feature, intake duct 814 = not shown) is heated. Tian Tian Zhi (pictured here, the exhaust gas flows from the inlet to the gas flow path 84 ° downwards to flow to the strip of air paste 4, which can be carried out by gas /; at night contact and further down and remove some components in the exhaust air flow . The special reduced air intake housing 802 can be fixed to the scrubber by welding 806 or other fixed or solid squares. == The pieces, ", accessories, etc. are firmly fixed to the scrubber; 4 This wool month provides a scrubber system in each special blanket. : Using to improve the stripe efficiency of hydrogen fluoride and fluorine and other halogen-containing compounds, the original gas can be used to produce harmful species such as dioxin, which is convenient to configure to destroy the silane gas species; it can reduce the rate and degree of cleaning; Prevent carbonic acid deposits = pressure-sensitive blocking of the mouth of the car, and other solid-type scrubbing system configuration & scoop eight j T-segment scrubbing configuration, which can significantly reduce the water dagger for scrubbing operation? ": And eliminate or at least roughly Reduce the need for chemicals; the lice filling material is used in the container structure. The container structure can be used for small straight two-tube columns to prevent shunting and groove effects. Contact effect

492891 _案號88122031_年月 日 修正_ 五、發明說明(54) 雖然已經參照特定具體例及特點說明本發明,但需瞭解 本發明之用途非僅囿限於此而可涵蓋多種變化、修改及替 代具體例。如此本發明係廣義視為涵蓋符合隨後申請專利 範圍於其精髓及範圍内的全部此等替代變化、修改及其它 具體實施例。 元件編號之說明 110 水 滌 氣 器 單 元 120 填 塞 床 逆 流 流 動 拋 光單元 130 入 P 的 金 屬 部 分 140 電 腦 150 鎳 塗 層 氣 體 槽 160 氣 體 感 測 器 槽 170 .氟 感 測 器 之 混 合 腔 室 210 水 滌 氣 器 220 表 面 積 填 塞 區 230 水 槽 240 逆 流 填 塞 拋 光 床 250 進 氣 D 300 載 入 模 組 302 進 給 管 線 304 進 氣 D 306 載 入 管 308 管 線 310 管 線492891 _Case No. 8822031_Year Month Day Amendment_ V. Description of the Invention (54) Although the present invention has been described with reference to specific examples and features, it should be understood that the application of the present invention is not limited to this but can cover a variety of changes, modifications and Substitute specific examples. As such, the present invention is broadly viewed as encompassing all such alternative variations, modifications, and other specific embodiments that fall within the spirit and scope of subsequent patent applications. Description of component number 110 Water scrubber unit 120 Packed bed countercurrent flow polishing unit 130 Metal part into P 140 Computer 150 Nickel-coated gas tank 160 Gas sensor tank 170. Mixing chamber of fluorine sensor 210 Water scrubber Air heater 220 Surface area packing area 230 Water tank 240 Countercurrent packing polishing bed 250 Air inlet D 300 Load module 302 Feed line 304 Air inlet D 306 Load tube 308 Line 310 Line

88122031.ptc 第59頁 492891 _案號88122031_年月 日 修正 五、發明說明(55) 312 管線 314 滌氣器單元/滌氣器 316 排放管線 318 管線 4 0 0 進氣結構 40 2 管線 4 0 4 進入管 40 6 光電螺旋琿口 410 下方管形通道件 412 週邊通道 414 進氣口 416 進氣口 418 管線 420 多孔内壁 422 0形環 424 0形環 430 内部通道 440 外壁 442 内壁 444 環形容積 446 内壁之上端 448 水入口 450 鎖定環 452 環型凸緣88122031.ptc Page 59 492891 _ Case No. 88122031_ Year Amendment V. Description of the invention (55) 312 Line 314 scrubber unit / gas scrubber 316 Emission line 318 Line 4 0 0 Intake structure 40 2 Line 4 0 4 Access pipe 40 6 Photoelectric spiral port 410 Tube-shaped channel member 412 Peripheral channel 414 Air inlet 416 Air inlet 418 Pipe 420 Porous inner wall 422 0-ring 424 0-ring 430 Internal channel 440 Outer wall 442 Inner wall 444 Annular volume 446 Upper end of inner wall 448 Water inlet 450 Locking ring 452 Ring flange

88122031.ptc 第60頁 492891 案號 88122031 年 月 曰 修正 五、發明說明(56) 454 456 460 500 502 504 505 506 508 510 511 512 514 516 518 520 522 524 526 600 602 604 606 608 徑向伸展凸緣 夾套 内部通道 水滌氣器 管線 進氣結構 管線 滌氣器腔室 排放導管 滌氣器單元 滌氣器系統排放琿口 管線 滌氣液循環幫浦 管線 排放管線 管線 化學注入管 化學注入單元 控制模組 壁内襯與填塞物總成 網眼袋 開口 十字交叉股線元件 填塞元件88122031.ptc Page 60 492891 Case No. 88122031 Amendment V. Description of the invention (56) 454 456 460 500 502 504 505 506 508 510 511 512 514 516 518 520 520 522 524 526 600 602 604 606 608 Radially extending flange Jacket internal channel water scrubber line air inlet structure pipeline scrubber chamber discharge duct scrubber unit scrubber system discharge nozzle pipeline scrubber liquid circulation pump discharge line pipeline chemical injection pipe chemical injection unit control module Group wall lining and stuffing assembly, mesh bag opening, crisscross strands, stuffing element

88122031.ptc 第61頁 492891 曰 修正 案號 88122031 五、發明說明(57) 610 上端封閉結構 612 彈簧偏位夾 614 帶 616 滌氣單元容器 700 二階段式滌氣; 702 第一滌氣器容丨 704 滌氣器介質床/ 706 支架/頂上空間 708 下方壓力通風: 710 槽 712 液態務氣介質 714 上游處理設備 716 管線 718 進氣裝置 720 加熱元件 722 管線 724 配件 726 幫浦 728 循環管線 730 驅動模組 732 中空軸 734 壁 736 穀 738 喷霧喷嘴88122031.ptc Page 61 492891 Amendment No. 88122031 V. Description of the invention (57) 610 Upper closed structure 612 Spring offset clamp 614 with 616 scrubbing unit container 700 two-stage scrubbing; 702 first scrubber container 丨704 scrubber media bed / 706 bracket / overhead space 708 pressure ventilation below: 710 tank 712 liquid business gas medium 714 upstream processing equipment 716 line 718 air inlet device 720 heating element 722 line 724 accessories 726 pump 728 circulation line 730 drive mold Group 732 hollow shaft 734 wall 736 valley 738 spray nozzle

\\326\2d-\91-01\88122031.ptc 第62頁 492891 案號88122031_年月日_^ ίΐ\\ 326 \ 2d- \ 91-01 \ 88122031.ptc Page 62 492891 Case No. 8822031_year month__ ίΐ

五、發明說明(58) 740 管線 742 配件 744 第二滌氣容器 746 袋 747 管線 748 支持結構 760 管線 762 管線 764 管線 766 鼓風機 768 拋光滌氣器 770 管線 790 凸部 796 區段 798 區段 800 進氣結構 802 殼體 804 滌氣器 806 配件 808 上游來源 810 管線 811 加熱元件 812 側壁 814 進氣導管 88122031.ptc 第63頁 492891 案號 88122031 年 月 曰 修正 五、發明說明(59) 815 開口 816 主中段 818 垂直伸展管/管 820 氣體來源 822 管線 824 上端 826 下端 830 内容積 832 外壁 834 中間筒形壁/中間壁 836 環形容積/内容積 n r\ r\ 6 06 内壁/邊界壁 840 氣體流徑 842 環形容積 844 凸緣壁 850 頂壁 852 筒形壁 854 邊界頂壁 860 進氣璋口 864 出氣埠口 866 管線 870 壓力通風空間 874 壁面V. Description of the invention (58) 740 Pipeline 742 Fitting 744 Second scrubber container 746 Bag 747 Pipeline 748 Support structure 760 Pipeline 762 Pipeline 764 Pipeline 766 Blower 768 Polishing scrubber 770 Pipeline 790 Projection 796 Section 798 Section 800 Air structure 802 Housing 804 Gas scrubber 806 Fitting 808 Upstream source 810 Pipeline 811 Heating element 812 Side wall 814 Intake duct 88122021.ptc Page 63 492891 Case No. 88122301 Revised fifth, description of the invention (59) 815 opening 816 main Middle section 818 Vertical extension pipe / tube 820 Gas source 822 Pipeline 824 Upper end 826 Lower end 830 Internal volume 832 External wall 834 Middle cylindrical wall / intermediate wall 836 Annular volume / internal volume nr \ r \ 6 06 Inner wall / boundary wall 840 Gas flow path 842 Annular volume 844 Flange wall 850 Top wall 852 Cylindrical wall 854 Boundary top wall 860 Inlet port 864 Outlet port 866 Pipeline 870 Pressure ventilation space 874 Wall surface

88122031.ptc 第64頁 圖式簡單說明氣》丄之之 圖1為減除氟及四氟化石夕 ===之試驗設備之示】-明排出氣體及溫度 視圖為根據本發明之-具體例之水務氣器系統之剖面透 氣以二氟二量線(:… 用;^ 4|ΛΓ根據本發明操作的務氣器單元之* 圖5\進=士物之濃度(PPm)呈時間之函數量測之 該進氣:構之示意仰視圖,該進氣結構可^ ; 貌、;冓呈嶋動連通接合的I氣器單元上 用為另一進氣結構之部分剖面仰視圖,★、、‘ 圖厂險含石夕燒之排出氣流中的石夕炫;s邊進氣結構可 仰ς圖為根據本發明之另—具體例之水務氣器襄置之示意 可作為用於=1旁/日表示)之曲線圖’該速率 、,為於水心置置:槽 滌乳液之pH之函數之曲線圖; “何生物浪度呈 知(之當,用第二階段I氣器時,相對於習 種氨流速之::::::氣濃度的減低)呈水流速以及多 及ΚίίΞί:;月上具體例之條氣器粒子之網眼袋以 亥寻粒子之滌氣器單元之關聯容器殼體之分解部分88122031.ptc on page 64. The diagram briefly illustrates the gas. Figure 1 shows the test equipment for the removal of fluorine and tetrafluoride.]-The exhaust gas and temperature view are according to the present invention.-Specific examples The cross-section ventilation of the water aerator system is based on the difluorobivolume line (: ... used; ^ 4 | ΛΓ of the aerator unit operated in accordance with the present invention * Fig. 5 \ In = the concentration of taxis (PPm) as a function of time The measured air intake: a schematic bottom view of the air intake structure, the appearance of the air intake structure can be ^; Appearance ,; I is a dynamic cross-linked joint of the I gas unit is used as another section of the air intake structure, a bottom view, ★, , 'The picture shows the danger of Shi Xixuan in the exhaust air stream containing Shi Xiyao; the s-side air intake structure can be lifted. The picture shows a schematic diagram of the installation of a water gas device according to another embodiment of the present invention. (The side / day indication) is a graph of 'the rate, which is a function of the pH of the water-storage emulsion: placed in the water core; "Where the biological wave is known (when using the second stage I air device, Relative to the current ammonia flow rate :::::: reduction of gas concentration) shows the water flow rate and more than the specific example of the month Decomposition of the container body portion associated to the particles of the mesh bag Hai find particles of the scrubber unit

IE 88122031.ptc 第65頁 1 492891 案號 88122031 年月曰 修正 圖式簡單說明 剖面仰視圖; 圖1 2為根據本發明之一具體例之二階段式滌氣器系統之 示意代表圖;以及 圖1 3為根據本發明之又一具體例之進氣結構之剖面仰視 圖0IE 88122031.ptc Page 65 1 492891 Case No. 88122031 Modified drawing Brief description cross-section bottom view; Figure 12 is a schematic representative diagram of a two-stage scrubber system according to a specific example of the present invention; 1 3 is a bottom sectional view of an air intake structure according to another specific example of the present invention. 0

88122031.ptc 第66頁88122031.ptc Page 66

Claims (1)

492891 WjL· 案號 88122031 六、申請專利範圍 1 · 一種滌氣系統,用於在含有氣體成份之氣流中減除一 種氣體成份,此種滌氣系統包含一氣/液接觸腔室,其#包~ 括用以將氣流及滌氣液導入接觸腔室,以於其中作氣)^ 接觸,以及額外具有至少一種下列特徵: ' (^)化學注入器,用以導入化學劑而接觸氣體成份,以於 氣/液接觸中由氣流去除氣體成份,選擇性組合背壓感應 裝置,其設置以至少部分減少滌氣系統於化學劑注入“時起 泡; (b) —進氣口,係設置用以將氣體導引至流過其中之氣 流’俾便於存在有矽烷時增進由氣流去除石夕烧; ” (c) 一第二氣/液接觸腔室,接受來自第一氣/液接觸腔室 里後f氣流’以及包括導入裝i,用以將第二蘇氣 =構造,配置用於氣流與條氣液的同‘動 J液動液接觸腔室之構造及配置呈氣流與第二 (二一:!注入器,用以將一泡沫抑制作用消泡劑導入 裡之妾觸之滌氣液,以抑制滌氣腔室内部 U擇性組合背壓感應裝£,其設置以 分生泡 *泡劑注入時之滌氣系統起泡; ''成y於 (e)抑制礙酸好由含^條氣液沈積置, 選自下列組群包含: W衣置係 液(Γ;磁磁場化區段’用於在滌氣液用於接觸腔室前對滌氣492891 WjL · Case No. 8822031 6. Scope of Patent Application 1 · A scrubbing system for removing a gas component from a gas stream containing a gas component. This scrubbing system includes a gas / liquid contact chamber and its # 包 ~ Including for introducing airflow and scrubbing liquid into the contact chamber for gas therein) ^ contact, and additionally having at least one of the following features: '(^) a chemical injector for introducing a chemical agent and contacting a gas component to In the gas / liquid contact, the gas component is removed by the gas flow, and the back pressure sensing device is selectively combined, which is arranged to at least partially reduce the foaming of the scrubbing system when the chemical agent is injected; (b)-the air inlet is provided for Directing the gas to the gas stream passing through it 'facilitates the removal of stone burns from the gas stream in the presence of silane; "(c) a second gas / liquid contact chamber receiving the first gas / liquid contact chamber The rear f air flow 'and the introduction device i are used to connect the second sour gas structure to the air flow and the gas and liquid. The structure and configuration of the dynamic fluid contact chamber is air flow and the second (two A:! Injector to A foam inhibitory defoaming agent is introduced into the contacting scrubbing liquid to suppress the selective combination of back pressure sensing device inside the scrubbing chamber. It is provided with a scrubbing system when the foaming agent is injected. Blistering; '' forming y in (e) inhibiting acid and acid deposition by ^ gas-liquid deposition, selected from the group consisting of: W clothing system fluid (Γ; magnetic field magnetization section 'for cleaning in gas The liquid is used to clean the gas before contacting the chamber. 492891 _案號 88122031_年月日__ 六、申請專利範圍 (2 )調整條氣液p Η而維持p Η低於8 · 5之裝置; (3) —石灰-蘇打灰床,設置於滌氣液用於接觸腔室前, 以使滌氣液流經其中;以及 (4 ) 一沈澱器,用以於滌氣液用於接觸腔室前來沈澱滌 氣液的妈内容物; (f )於滌氣系統通.道中抑制固體形成之裝置,係選自下列 組群,其包含使洗滌氣體流經通道而抑制固體於其中形成 之裝置,以及加熱通道而抑制固體於其中形成之裝置;以 及 (g )當石夕烧結合氨存在於氣流時,由氣流減除石夕烧之裝 置,此種裝置係選自下列組群,其包含·. (1)於氣流導至務氣系統前加熱氣流之裝置;以及 (2 )根據(c )項之第二氣/液接觸腔室,以及於已處理的 氣流導至第二氣/液接觸腔室前,將乾淨的乾空氣或其它 含氧氣體導至來自第一氣/液接觸腔室之經處理的氣流之 裝置。 2. —種滌氣系統,包括一進氣結構,用以將含一矽烷成 份之氣流藉使氣流流經進氣結構而被導入滌氣裝置,該進 氣結構包括對流經其中之氣流導引一氣體,以促進矽烷成 份於滌氣系統的去除。 3. 如申請專利範圍第2項之滌氣系統,其中該進氣結構 係偶聯至含氧氣體來源。 4. 如申請專利範圍第2項之滌氣系統,其中該進氣結構 係偶聯至氮氣來源。492891 _Case No. 88220231_year month__ Sixth, the scope of patent application (2) the device to adjust the gas and liquid p 条 and maintain p Η below 8 · 5; (3)-lime-soda ash bed, set in The gas-liquid is used before contacting the chamber so that the scrubbing liquid flows therethrough; and (4) a precipitator is used for the scrubbing liquid used to contact the chamber to precipitate the contents of the scrubbing liquid; (f ) A device for inhibiting the formation of solids in the channel of the scrubbing system is selected from the group consisting of a device for passing the washing gas through the channel to inhibit the formation of solids therein, and a device for heating the channel to inhibit the formation of solids therein; And (g) when Shi Xiyao combined with ammonia is present in the air stream, a device for removing Shi Xiyao from the air stream, such a device is selected from the group consisting of: (1) before the air stream is led to the business air system Means for heating the airflow; and (2) the second gas / liquid contact chamber according to item (c), and before the treated airflow is directed to the second gas / liquid contact chamber, clean dry air or other A device for directing oxygen gas to a treated gas stream from a first gas / liquid contact chamber. 2. A scrubbing system including an air intake structure for introducing an air stream containing a silane component into the scrubbing device by passing the air stream through the air intake structure, and the air intake structure includes airflow guides passing therethrough. A gas to promote the removal of silane components in the scrubbing system. 3. The scrubbing system according to item 2 of the patent application, wherein the intake structure is coupled to an oxygen-containing gas source. 4. The scrubbing system according to item 2 of the patent application, wherein the intake structure is coupled to a nitrogen source. 88122031.ptc 第68頁 月 '申; 份5之ί氣系統,包括—進氣結構’ 氣結槿:错使氣流流經進氣結構而被導 份於芥^括對流經其中之氣流導引一氣 氣口:軋系统的去除,其中該氣體導入 界定上、’,具有環形氣體導入通道,係 流經診,氣口部之氣流通道,以及促進 器,,(ii)一下進氣口部,包括 過進S Ξ i内壁,該内壁具有一内壁面 垂膜而下進氣口部’且於溢流時 (iU) —VI氣流之固體或固體形成成份 袭置之卜氣管,係延伸進入氣流通道: 其中該,⑧部及下進氣部之~的下端 來源導體導入裝置之構造及配置可 6 =入滌氣装置。 以外之氣系統’用以處理包含酸氣 一第可滌氣成份之排出氣體,該滌 體而去…t氣器單兀,用以使用水性滌 於水性二1、酸氣成份,該第—滌氣器單 低、以ί乳液與排出氣體彼此同流接觸 氣體降低1曼氣成份以外的水可滌氣成份 —μ低之排出氣體; 出氣ί:ί氣器單元,用以使用第二水 成份以及ί除殘餘酸氣成份以及酸氣成 \餘的水反應性成份,該第二 修正 用以將含一矽烷成 入滌氣裝置,該進 體,以促進矽烷成 裝置包含(i)上進 包括可透氣壁,其 石夕烧去除之氣體可 形溢流液貯 界定一氣流通道通 於内壁面產生液體 之此種内壁面以及 ,且止於氣體導入 ’ 將含矽烷氣體由其 成份以及酸氣成份 氣糸統包含: 氣液來滌氣排出氣 元之構造及配置用 而獲得酸氣成份降 降低以及水反應性 性滌氣液來滌氣排 份以外的水可滌氣 條氣器單元係構造88122031.ptc Page 68 'Shen; Part 5 of the gas system, including-air intake structure' Qi Jie: Incorrect flow of air through the air intake structure and is guided to mustard ^ Convection of air flow through it A gas port: the removal of the rolling system, in which the gas introduction is defined above and below, it has a ring-shaped gas introduction channel, the system passes through the diagnosis, the gas flow channel of the gas port, and the accelerator, (ii) the air intake port, including the Into the inner wall of S Ξ i, the inner wall has an inner wall surface with a vertical membrane and a lower air inlet portion, and at the time of overflow (iU)-VI air solid or solid forming components attacked the air duct, which extends into the air flow channel: Among them, the structure and configuration of the lower end source conductor introduction device of the crotch portion and the lower air inlet portion can be 6 = into the scrubbing device. The other gas system 'is used to treat the exhaust gas containing the acid gas first component that can be scrubbed, and the scrubbing body is left ... t gasifier unit is used to use water-based scrubbing for water-based acid component 1. The first— The scrubber is single low, and the emulsion and exhaust gas are brought into contact with each other in the same flow. The gas reduces the water content other than the gas component by 1 mann—the exhaust gas with a low μ. The outlet unit is used to use the second water. Components, and in addition to the remaining acid gas components and the water-reactive components formed by the acid gas, the second modification is used to form a silane-containing gas scrubber device, which is used to promote the silane-forming device to include (i) It includes a gas permeable wall, and the gas-shaped overflow liquid reservoir from which the stone burnt is removed defines an air flow channel which passes through the inner wall surface to produce a liquid such as the inner wall surface, and stops at the introduction of the gas. The acid gas component gas system includes: the structure and configuration of the gas-liquid to purify the exhaust gas to obtain a reduction in the acid gas component and the water-reactive gas purifier other than the water-reactive gas-purified liquid to purify the gas. Unit structure 492891 案號 88122031 年 月 曰 修正 六、申請專利範圍 及配置用於第二水性滌氣液與排出氣體彼此逆流接觸,以 獲得酸氣成份及酸氣成份以外的水可滌氣成份以及水反應 性成份更加減低之排出氣體;以及 將酸氣成份、酸氣成份以外之水可滌氣成份以及水反應 性氣體減少的排出氣體由第一滌氣器單元流動至第二滌氣 器單元之裝置。 7. 如申請專利範圍第6項之滌氣系統,其中該第二滌氣 器單元之容積實質小於第一滌氣器單元容積。 8. —種滌氣系統,用於經由於氣/液接觸腔室接觸排出 氣體與水性滌氣介質,以處理排出氣體而去除排出氣體之 水可滌氣成份,該滌氣系統包含可抑制碳酸鈣沈積於含鈣 水性滌氣介質之裝置,該抑制裝置係選自下列組群包含: (1 ) 一磁化區段,用於在滌氣液用於接觸腔室前對滌氣 液施加磁場, (2) 調整滌氣液pH而維持pH低於8. 5之裝置; (3) —石灰-蘇打灰床,設置用以於使用滌氣液與接觸腔 室前使滌氣液流經其中。 9. 一種滌氣系統,用於經由於氣/液接觸腔室接觸排出 氣體與水性滌氣介質,以處理排出氣體而去除排出氣體之 水可滌氣成份,該系統包含一沈澱器,用以於水性滌氣介 質使用於接觸腔室前沈澱水性滌氣介質之鈣含量,該沈澱 器包含一腔室,用以接觸水性滌氣介質與可有效沈澱水性 滌氣介質之鈣含量的化學劑,以及傳輸化學劑至接觸腔室 之裝置。492891 Case No. 88122031 Amendment VI. Patent application scope and configuration for the second water-based scrubbing liquid and exhaust gas to contact each other countercurrently to obtain acid gas components and water-cleanable gas components other than acid gas components and water reactivity An exhaust gas having a reduced composition; and a device for flowing the exhaust gas with a reduced acid gas component, a water-extractable gas component other than the acid gas component, and a water-reactive gas from the first scrubber unit to the second scrubber unit. 7. The scrubbing system according to item 6 of the patent application, wherein the volume of the second scrubber unit is substantially smaller than the volume of the first scrubber unit. 8. A scrubbing system for contacting the exhaust gas with an aqueous scrubbing medium through a gas / liquid contact chamber to treat the exhaust gas and remove the water-degassable components of the exhaust gas. A device for depositing calcium in a calcium-containing aqueous scrubbing medium, the suppression device is selected from the group consisting of: (1) a magnetized section for applying a magnetic field to the scrubbing liquid before the scrubbing liquid is used to contact the chamber, (2) a device for adjusting the pH of the scrubbing liquid to maintain the pH below 8.5; (3) a lime-soda ash bed set to allow the scrubbing liquid to flow therethrough before the scrubbing liquid is used in contact with the chamber. 9. A scrubbing system for contacting an exhaust gas and an aqueous scrubbing medium through a gas / liquid contact chamber to process the exhaust gas and remove the water-degradable components of the exhaust gas. The system includes a settler for The calcium content of the aqueous scrubbing medium is precipitated before the aqueous scrubbing medium is used in contact with the chamber. The precipitator includes a chamber for contacting the aqueous scrubbing medium and a chemical agent that can effectively precipitate the calcium content of the aqueous scrubbing medium. And a device that delivers chemicals to the contact chamber. \\326\2d-\91-01\88122031.ptc 第70頁 492891 _案號88122031_年月曰 修正_ 六、申請專利範圍 1 0. —種滌氣系統,用於處理排出氣體而去除排出氣體 之水可滌氣成份,經由排出氣體於氣/液接觸腔室接觸水 性滌氣介質,該腔室包含一腔室壁,其包圍該接觸腔室之 内容積,該接觸腔室包括重新導引流體流沿壁流至腔室内 容積之内區之裝置。 11. 一種氣/液接觸物件,用於活動式安裝於滌氣器容 器,其具有導引氣體及液體至滌氣器容器之内容積,以供 於其中作氣/液接觸之裝置,該填塞介質總成包含一多孔 袋及一塊容納於該袋内之填塞元件。 1 2.如申請專利範圍第11項之氣/液接觸物件,其中該袋 係由聚合物網眼所形成。 1 3.如申請專利範圍第11項之氣/液接觸物件,其進一步 包含可人工操作的袋之包圍體件。 1 4. 一種減除排出氣流之含氟化合物之裝置包含: 一水滌氣器單元,用於氣/液接觸; 將含氟化合物排出氣流導入水滌氣器單元之裝置; 由該水務氣器單元排放含氟化合物減少之排出氣流之裝 置;以及 一還原劑來源,係工作式耦合水滌氣單元且配置成於其 操作期間將還原劑導入水滌氣單元。 1 5.如申請專利範圍第1 4項之裝置,其中還原劑來源包 含將還原劑注入水滌氣器單元之裝置。 1 6.如申請專利範圍第1 4項之裝置,其進一步包含監視 含氟化合物之排出氣流的含氟化合物濃度之裝置,以及回\\ 326 \ 2d- \ 91-01 \ 88122031.ptc Page 70 492891 _Case No. 88122021_ Year, Month, and Revise The water and gas component of the gas can contact the water-based gas cleaning medium through the exhaust gas in the gas / liquid contact chamber. The chamber includes a chamber wall surrounding the inner volume of the contact chamber. The contact chamber includes a A device that directs the flow of fluid along the wall to the inner region of the volume in the chamber. 11. A gas / liquid contact object for movable installation in a scrubber container, which has a device for guiding gas and liquid to the inner volume of the scrubber container for gas / liquid contact therein, and the plug The medium assembly includes a porous bag and a stuffing element contained in the bag. 1 2. The gas / liquid contact article according to item 11 of the patent application scope, wherein the bag is formed of a polymer mesh. 1 3. The gas / liquid contact article according to item 11 of the scope of patent application, which further comprises a surrounding body of a manually operable bag. 1 4. A device for removing fluorinated compounds from an exhaust gas stream includes: a water scrubber unit for gas / liquid contact; a device for introducing a fluorinated compound exhaust gas stream to a water scrubber unit; A device for reducing the exhaust gas flow of the fluorinated compound from the unit; and a source of reducing agent, which is operatively coupled to the water scrubbing unit and is configured to introduce the reducing agent into the water scrubbing unit during its operation. 15. The device according to item 14 of the scope of patent application, wherein the source of the reducing agent includes a device for injecting the reducing agent into the water scrubber unit. 16. The device according to item 14 of the scope of patent application, further comprising a device for monitoring the concentration of the fluorine-containing compound in the exhaust gas stream of the fluorine-containing compound, and 88122031.ptc 第71頁 492891 _案號88122031_年月曰 修正_ 六、申請專利範圍 應於此來調整還原劑導引至水滌氣器單元。 1 7. —種半導體製造設備,包含: 一半導體製程單元,產生含氟化合物之排出氣流;以及 一減除該排出氣流之含氟化合物之裝置,包含: 一水滌氣器單元用於氣/液接觸; 將含氟化合物排出氣流導入水滌氣器單元之裝置; 由該水務氣器單元排放含氟化合物減少之排出氣流之裝 置;以及 一還原劑來源,工作式耦合水滌氣單元且配置成於其操 作期間將還原劑導入水滌氣單元。 1 8.如申請專利範圍第1 7項之半導體製造設備,其中半 導體製程單元包含一製程單元,選自由電漿反應腔室、化 學氣相沈積腔室、蒸發器、磊晶生長腔室及蝕刻工具組成 的組群。 1 9.如申請專利範圍第1 7項之半導體製造設備,其中還 原劑來源包含將還原劑注入水滌氣器單元之裝置。 2 0.如申請專利範圍第1 7項之半導體製造設備,其進一 步包含監視含氟化合物之排出氣流的含氟化合物濃度之裝 置,以及回應於此以調整還原劑導引至水滌氣器單元。 2 1. —種滌氣方法,用以減除於含有一種氣體成份之氣 流之該氣體成份,該滌氣方法包含將氣流及滌氣液導入氣 /液接觸腔室,以及於其中執行氣/液接觸,其中該方法額 外包含下列步驟之至少一者: (a)導入一種化學劑,用以接觸氣體成份而於氣/液接觸中88122031.ptc Page 71 492891 _ Case No. 88122031_ Year Month Amendment _ 6. Scope of patent application It is here to adjust the reducing agent to the water scrubber unit. 1 7. A semiconductor manufacturing equipment including: a semiconductor process unit that generates an exhaust gas stream containing fluorine compounds; and a device for reducing the fluorine compound containing the exhaust gas stream, including: a water scrubber unit for gas / Liquid contact; a device for introducing a fluorine-containing compound exhaust gas stream into a water scrubber unit; a device for discharging a fluorine-containing compound exhaust gas stream that is reduced by the water gasifier unit; and a source of a reducing agent, which is coupled to the water-purifying gas unit and configured The reducing agent is introduced into the water scrubbing unit during its operation. 1 8. The semiconductor manufacturing equipment according to item 17 of the scope of patent application, wherein the semiconductor process unit includes a process unit selected from a plasma reaction chamber, a chemical vapor deposition chamber, an evaporator, an epitaxial growth chamber, and etching. Groups of tools. 19. The semiconductor manufacturing equipment according to item 17 of the scope of the patent application, wherein the source of the reducing agent includes a device for injecting a reducing agent into the water scrubber unit. 20. The semiconductor manufacturing equipment according to item 17 of the scope of patent application, further comprising a device for monitoring the concentration of the fluorinated compound in the exhaust gas flow of the fluorinated compound, and responding thereto to adjust the reducing agent to be guided to the water scrubber unit. . 2 1. A scrubbing method for removing the gas component from a gas stream containing a gas component, the scrubbing method includes introducing the gas stream and the scrubbing liquid into a gas / liquid contact chamber, and performing the gas / Liquid contact, wherein the method additionally comprises at least one of the following steps: (a) introducing a chemical agent for contacting a gas component in gas / liquid contact 88122031.ptc 第72頁 49289188122031.ptc Page 72 492891 __ 案號 881220jj_ 六、申請專利範圍 由氣流去除該氣體成份 (b)於氣流進入接觸腔室前,將一種氣體 體當矽烷存在於氣流時可提升由氣流去除 ⑷排出氣體由接觸腔室流動至一第;;:觸 …種第=氣之導入該第二接觸腔室,::匕進: 孔/液接觸’二中於第-接觸腔室之第_氣,液接觸包含: 流與滌氣液的同流流動,以及其中第二接觸腔室之第二, /液接觸包含氣流及第二滌氣液逆流流經第二接觸腔室礼 U)將消泡劑導入滌氣液,以用於氣/液接觸,俾便 觸腔室產生泡沫·, J ^ (e )抑制奴酸鈣由含鈣之滌氣液沈積,包括一步驟選自下 列組群包含: U )於條氣液用於接觸腔室前加諸一磁場於滌氣液; (2)調整滌氣液PH而維持pH低於8. 5 ; (3 )於使用滌氣液於接觸腔室前,使滌氣液流經石灰-蘇 打灰床;以及 (4)於使用務氣液於接觸腔室前,沈澱滌氣液之鈣含 量;以及 (f)於條氣系統通道抑制固體形成,該通道包含一通至壓 力感測裝置之導管’包括_步驟選自將洗滌氣體流經通道 而抑制於其中形成固體,以及加熱通道而抑制固體於其中 形成組成的組群。 > 2j· —種氣流之處理方法,係用來處理含矽烷成份之一 氣机’俾便減除氣流成份,該方法包含以水性滌氣介質滌__ Case No. 881220jj_ 6. The scope of the application for a patent removes the gas component by the airflow (b) Before the gas enters the contact chamber, a gas can be lifted when the silane is present in the airflow. The first contact of the first contact chamber is: the introduction of the first contact gas into the second contact chamber, and the second contact chamber of the second contact chamber with the liquid contact includes: flow and cleaning The co-current flow of gas and liquid, and the second contact liquid in the second contact chamber, including the air flow and the second scrubbing liquid flowing countercurrently through the second contacting chamber. U) The defoamer is introduced into the scrubbing liquid to For gas / liquid contact, foaming in the chamber of the stool, J ^ (e) inhibits calcium slave acid from depositing calcium-containing polyester-liquid, including a step selected from the group consisting of: U) Add a magnetic field to the scrubbing liquid before contacting the chamber; (2) Adjust the pH of the scrubbing liquid to maintain the pH below 8.5; (3) Before using the scrubbing liquid to contact the chamber, make the scrubbing liquid Flowing through a lime-soda ash bed; and (4) precipitating the calcium content of the scrubbing liquid before using the working gas liquid in the contact chamber; (f) inhibiting the formation of solids in the gas channel, the channel including a conduit to a pressure sensing device, including the steps selected from the group consisting of flowing washing gas through the channel to inhibit solid formation therein, and heating the channel to inhibit solid formation therein Form a formed group. > 2j · —A method for treating air flow, which is used to treat one of the silane-containing components. 88122031.ptc 第73頁 492891 _案號88122031_年月曰 修正_ 六、申請專利範圍 氣氣流,以及在使用氣體滌氣前接觸氣流,俾便促進於滌 氣步驟之石夕烧成份的去除。 2 3.如申請專利範圍第22項之方法,其中該氣體包含含 氧氣體。 2 4.如申請專利範圍第22項之方法,其中該氣體包含氮 氣。 2 5. —種滌氣方法,其中待滌氣的氣體流經一進氣結構 至一滌氣裝置,且氣體含有一矽烷成份,該方法包含對流 經進氣結構的氣體導入一氣體,俾便促進於滌氣裝置去除 矽烷成份,其中該氣體進氣結構包含(i)上進氣口部,具 有環形氣體導入通道,其包括可透氣壁,其界定上進氣口 部之氣流通道,以及促進矽烷去除之氣體可流經該通道, (i i ) 一下進氣口部,包括一環形溢流液貯器,其附有内 壁,該内壁有一内壁面,其界限一氣流通道通過進氣結構 之下進氣口部,且於溢流時於内壁面產生液體垂膜而沖洗 氣流之固體或固體形成成份之此種内壁面以及(i i i) 一進 氣管,係延伸入氣流通道,且止於氣體進氣結構之上進氣 部及下進氣部之一的下端; 其中該氣體進氣結構之構造及配置可將含矽烷氣體由其 來源導入滌氣裝置。 2 6. —種務氣方法,用以處理包括酸氣成份及酸氣成份 以外之水可滌氣成份之排出氣體,該方法包含: 使用水性滌氣液於第一滌氣區段滌氣排出氣體而去除排 出氣體之酸氣成份,水性滌氣液及排出氣體彼此同流接觸88122031.ptc Page 73 492891 _ Case No. 88122031_ Years and months Amendment _ 6. Scope of patent application Gas flow, and contact with the gas flow before using gas scrubbing, will promote the removal of stone sintering components in the scrubbing step. 2 3. The method of claim 22, wherein the gas comprises an oxygen-containing gas. 24. The method of claim 22, wherein the gas comprises nitrogen. 2 5. A scrubbing method, in which the gas to be scrubbed flows through an intake structure to a scrubbing device, and the gas contains a silane component, the method includes introducing a gas to the gas flowing through the intake structure, and Facilitates the removal of silane components in a scrubbing device, wherein the gas intake structure includes (i) an upper air inlet portion having a ring-shaped gas introduction channel including a breathable wall that defines an air flow channel at the upper air inlet portion, and promotes The silane-removed gas can flow through the channel, (ii) the lower air inlet portion includes an annular overflow liquid reservoir with an inner wall, the inner wall has an inner wall surface, and a boundary of an air flow channel passes under the air intake structure. Such an inner wall surface of the air inlet part, which generates a liquid drooping film on the inner wall surface during flushing, and flushes the solid or solid-forming components of the air flow, and (iii) an air inlet pipe, which extends into the air flow channel and stops at the gas The lower end of one of the upper air intake part and the lower air intake part; the structure and configuration of the gas intake structure can introduce silane-containing gas from its source into the scrubbing device. 2 6. — A kind of business gas method for treating the exhaust gas including acid gas component and water-exhaustible gas component other than the acid gas component, the method includes: using an aqueous scrubbing liquid to exhaust the scrubbing gas in the first scrubbing section Gas to remove the acid gas component of the exhaust gas, the aqueous scrubbing liquid and the exhaust gas are in contact with each other concurrently 88122031.ptc 第74頁 492891 案號 88122031 Λ月 曰 修正 六、申請專利範圍 而獲得酸氣成份含量減低的排出氣體; 以第二水性滌氣液於第二滌氣區段滌氣排出氣體而由排 出氣體去除酸氣成份以外的水可滌氣成份,採用第二水性 滌氣液與排出氣體彼此逆流接觸而獲得酸氣成份及酸氣成 份以外之水可;條氣成份減低的排出氣體;以及 酸氣成份減低的排出氣體由第一滌氣器單元流至第二滌 氣态單元,{ J 〇 e S w e e n e y註解:注意通過同流接觸階段 後,酸氣成份以及酸氣成份以外之水可滌氣成份二者濃度 減低,此外水反應性氣體可於同流階段減低濃度,酸氣成 份及水溶性成份於同流階段減少至濃度趨 成份及水溶性成份與水性務氣液的平衡值丨。于尤於k孔 段2:積如係甲Λ專利範圍第26項之方法,其中該第二滌氣區 段積係大致小於第一滌氣區段容積。 之n氣m,:以處理排出氣體而去除排出氣體 接觸區段:出氣體與水性梅氣介質於氣,液 質沈積,該方二:法制碳酸鈣由含鈣水性條氣介 Ο)於私^ 包括一抑制步驟選自下列組群包含, (2)綱^虱液用於接觸腔室前,加諸一磁場於滌惫、、广· 二正條氣液PH而維持pH低於8· 5 ; ^ ^ /使用滌氣液於接觸腔室前,使滌氣π 打灰床。 乳,夜流經石灰-蘇 種滌氣方法,用以處理·排出氣妒 3:;氣成份,經由排出氣體於氣/ 除排出氣體 1貝於接觸腔室88122031.ptc, page 74, 492891, case number 88122031, month 6 amended the scope of patent application to obtain the exhaust gas with a reduced acid gas content; the second aqueous scrubbing liquid is used to scrub the exhaust gas in the second scrubbing section and The exhaust gas removes water and gas components other than the acid gas component, and uses a second aqueous scrubbing liquid and the exhaust gas to make countercurrent contact with each other to obtain acid gas components and water other than the acid gas component; exhaust gas with reduced strip gas components; and Exhaust gas with reduced acid gas content flows from the first scrubber unit to the second scrubber unit. {J 〇e S weeney Note: Note that after passing through the co-current contact stage, the acid gas components and water other than the acid gas components may The concentration of both the scrubbing component is reduced. In addition, the water-reactive gas can be reduced in the co-current phase. The acid gas component and the water-soluble component are reduced to the concentration trend component and the equilibrium value of the water-soluble component and the water-based gas-liquid in the co-current phase. . Especially for the k-hole section 2: Jiru is the method of item 26 of the patent scope, wherein the volume of the second scrubbing section is substantially smaller than the volume of the first scrubbing section. The n gas m: the treatment of the exhaust gas to remove the exhaust gas contact section: the exhaust gas and the water-based plum gas medium in the gas, liquid deposition, the second method: the method of calcium carbonate is made of calcium-containing water-based gas ^ Including an inhibitory step selected from the following groups: (2) Class ^ Before applying the lice liquid to the chamber, apply a magnetic field to the exhausted, wide, and two normal strips of gas-liquid pH to maintain the pH below 8. 5; ^ ^ / Use the scrubbing liquid before touching the chamber, and scrub the scrubbing bed with scrubber π. Milk, flowing through the lime-threat gas scrubbing method at night, used to treat and exhaust gas jealousy 3 :; gas components, through the exhaust gas to the gas / to remove the exhaust gas 1 to the contact chamber 88122031.ptc 第75頁 492891 _案號88122031_年月日__ 六、申請專利範圍 前沈澱水性滌氣介質的鈣含量,包括使水性滌氣介質與化 學劑接觸以有效沈澱水性滌氣介質之鈣含量之步驟。 3 0. —種務氣方法,用以處理排出氣體而去除排出氣體 之水可滌氣成份,經由排出氣體於氣/液接觸腔室接觸水 性滌氣介質,該腔室包括一腔室壁,其包圍接觸腔室的内 容積,該接觸包含重新導引流體流順著壁流入腔室的内容 積内區。 3 1. —種氣/液接觸方法,包含抑制壁於含填塞材料之滌 氣器容器的影響,利用至少一選自下列組群之步驟,該組 群包含: 於滌氣器容器内活動式安裝一填塞介質總成,其包含一 多孔容器結構及一塊容納於其中之填塞元件,以及將氣流 及滌氣液流經多孔容器結構用以於填塞元件上進行氣/液 接觸;以及 利用物理結構擴大壁面而破壞滌氣器容器内壁面上之流 量。 3 2.如申請專利範圍第3 1項之方法,其中袋係由聚合物 網眼製成。 3 3.如申請專利範圍第3 1項之方法,其中袋包含一可人 工操作之包圍體元件。 3 4. —種氣流之減除方法,係於含氟化合物之氣流減除 含氟化合物之方法,包含於還原劑存在下以水性介質滌氣 氣流。 3 5.如申請專利範圍第3 4項之方法,其中還原劑包含至88122031.ptc Page 75 492891 _Case No. 88220231_Year_Month__ VI. The calcium content of the aqueous scrubbing medium precipitated before the scope of patent application, including contacting the aqueous scrubbing medium with chemical agents to effectively precipitate the aqueous scrubbing medium Steps for calcium content. 3 0. — A method for treating gas, which is used to treat the exhaust gas and remove the water degassable components of the exhaust gas. The exhaust gas is contacted with the aqueous scrubbing medium through the gas / liquid contact chamber. The chamber includes a chamber wall, It encloses the inner volume of the contact chamber, which contact includes redirecting fluid flow along the wall into the inner volume of the chamber. 3 1. —A gas / liquid contact method comprising suppressing the influence of a wall on a scrubber container containing a stuffing material, using at least one step selected from the group consisting of: a movable type in a scrubber container Installing a stuffing medium assembly comprising a porous container structure and a stuffing element contained therein, and flowing air and scrubbing liquid through the porous container structure for gas / liquid contact on the stuffing element; and using physical The structure enlarges the wall surface and destroys the flow on the inner wall surface of the scrubber container. 3 2. The method of claim 31, wherein the bag is made of polymer mesh. 33. The method according to item 31 of the patent application, wherein the bag comprises a surrounding body element which can be manipulated manually. 3 4. —A method for reducing airflow, which is a method for removing airflow from a fluorine-containing compound. A method for removing a fluorine-containing compound includes purifying the airflow with an aqueous medium in the presence of a reducing agent. 3 5. The method according to item 34 of the patent application scope, wherein the reducing agent comprises to 88122031.ptc 第76頁 492891 案號 88122031 年月曰 修正 六、申請專利範圍 少一種選自硫代硫酸鈉、氫氧化銨及碘化鉀組成之組群之 化合物。 其中還原劑包括硫 其中還原劑包括氫 其中還原劑包括碘 其中還原劑係於滌 其中含氟化合物包 其中含氟化合物包 其中含氟化合物之 其中含氟化合物之 3 6.如申請專利範圍第34項之方法 代硫酸鈉。 3 7.如申請專利範圍第3 4項之方法 氧化銨。 3 8.如申請專利範圍第3 4項之方法 化I甲。 3 9.如申請專利範圍第3 4項之方法 氣期間注入水性介質。 4 0.如申請專利範圍第3 4項之方法 含氟氣。 4 1.如申請專利範圍第34項之方法 含氣態氟化物化合物。 4 2.如申請專利範圍第34項之方法 氣流包含半導體製程之排出流。 4 3.如申請專利範圍第34項之方法 氣流包含於半導體製造設備來自電漿反應器清潔操作的排 出物。 44.如申請專利範圍第34項之方法,其進一步包含監視 氣流之製程條件以及以與該製程條件無關之量導入還原 劑。 4 5.如申請專利範圍第44項之方法,其中氣流之製程條 件為pH。88122031.ptc Page 76 492891 Case No. 88122031 Amendment 6. Scope of patent application One less compound selected from the group consisting of sodium thiosulfate, ammonium hydroxide and potassium iodide. Where the reducing agent includes sulfur, where the reducing agent includes hydrogen, where the reducing agent includes iodine, where the reducing agent is contained in the fluorine-containing compound, the fluorine-containing compound, the fluorine-containing compound, and the fluorine-containing compound. Item of sodium sulphate. 37 7. The method according to item 34 of the scope of patent application. Ammonium oxide. 3 8. The method according to item 34 of the scope of application for patents. 3 9. The method according to item 34 of the scope of patent application. Inject the aqueous medium during the gas phase. 40. The method according to item 34 of the scope of patent application. Fluorine-containing gas. 4 1. The method according to item 34 of the patent application, which contains a gaseous fluoride compound. 4 2. The method according to item 34 of the scope of the patent application. The air flow includes the exhaust flow from the semiconductor process. 4 3. The method according to item 34 of the scope of patent application. The air flow is contained in the semiconductor manufacturing equipment's discharge from the plasma reactor cleaning operation. 44. The method of claim 34, further comprising monitoring the process conditions of the gas stream and introducing a reducing agent in an amount independent of the process conditions. 4 5. The method according to item 44 of the scope of patent application, wherein the process conditions of the gas flow are pH. II mII m 88122031.ptc 第77頁 77厶0”丄 77厶0”丄 曰 六 皇號88122^ 申請專利範圍 4:如:請專利範圍第34項之方法1 、 件為含氟化合物濃度。 〃中氣流之製程條 广一種由含氟化合物之排出氣流 ”於逛原劑存在下接觸氣流與水性入:合物之方 含亂化合物反應而還原於排出氣流中二::該還原劑 未升》成二氟化氧。 的δ氟化合物而 4 8 ·如申請專利範圍第4 7項之方法,1 · 氫氧化鉀及氫氧化鈉組成的組群。 一甲還原劑係選自 49. 一種由含有矽烷之排出氣流減除矽烷 以一水性介質減除排Ψ名、ώ 方法,包含 乾空氣至排出氣流及水性介皙 返率導引乾淨 之矽烷濃度。 至乂—者而降低排出氣流 5〇· —種排出氣流減除滌氣系統,包含一 以滌氣排出氣體,該系統之構造及配置々虱益,用 自下列組群之功能,該組群包含: 适仃至少一種選 U)水滌氣排出氣體,其具有添加或注入化段. (2 )水滌氣含矽烷排出氣體,其中乾:遇原劑, 出氣體或滌氣液; 礼二乳被導入排 (3) 利用二階段式滌氣系统,該系統包括 柱及一拋光質量移轉管柱,來減少所千衡滌氣管 比較單-階段滌氣單元維持或提高滌氣效率:乳水’同時 (4) 於導引至拋光質量移轉滌氣管柱’ 氣至由(3)平衡條氣管枝排放的排出氣體’;;=乾淨乾空 同氨存在於排出氣流時減除矽烷; 便t矽烷連88122031.ptc Page 77 77 厶 0 ”丄 77 厶 0” 丄 Sixth Queen No. 88122 ^ Patent Application Scope 4: For example: Method 1 of the 34th scope of the patent, please refer to the concentration of fluorinated compounds. The process of the gas stream in Langzhong is widely described as a kind of exhaust gas stream containing fluorinated compounds "in the presence of the original agent, contacting the gas stream with water: the compound side reacts with the chaotic compound and is reduced in the exhaust gas stream 2: The reducing agent is not raised 》 To form a difluoride oxygen. Δ Fluorine compounds and 4 8 · As the method of the scope of patent application No. 47, 1 · a group consisting of potassium hydroxide and sodium hydroxide. A methyl reducing agent is selected from 49. A Silane removal from silane-containing exhaust gas stream Elimination of silane by a water-based medium. The method includes dry air to the exhaust gas stream and water-based medium return rate to guide the concentration of clean silane. 〇 · —A kind of exhaust air depletion scrubbing system, including a scrubbing exhaust gas, the structure and configuration of the system, and the function of the following groups, the group includes: suitable for at least one selected U) Water scrubber exhaust gas, which has an adding or injecting section. (2) Water scrubber containing silane-containing exhaust gas, which is dry: meet the original agent, gas or scrubber liquid; the second milk is introduced into the exhaust (3) the use of two stages Scrubber system, The system includes a column and a polishing quality transfer pipe column to reduce the weight of the polyester pipe. The single-stage scrubbing unit maintains or improves the efficiency of the scrubbing: at the same time (4) at the same time as the guide to the polishing quality transfer polyester pipe. Column 'Gas to the exhaust gas discharged from (3) the balance tube trachea branch' ;; = clean dry air and ammonia in the presence of ammonia to reduce silane; 88122031.ptc 第78頁88122031.ptc Page 78 -1S-_88122031 六、申請專利批圍 (5 )於(3 )之二階段式、狄^ / 床填裝於拋光質量移轉含多孔容器結構之 f g β 札體接觸二氟化氧還原劑; 統起泡; 次“乳液流孔口約束,控制氣體系 (Sal : 3 :或多者防止碳酸鈣積聚於蘇氣系統; 滌乳用補充水之磁化; (b)控制補充水ρΗ ; _ ί水之蘇打灰-石灰敕化;以及 補充水之沈澱或絮凝處理; (9 ) 4 ρ制條氣系統中包 口阻塞,扣制太々 累線傳感線之光電螺線埠 、丄u j加熱用於滌氣友 滌氣區段。 孔糸統的進軋結構,以將排出氣體導入-1S-_88122031 VI. Approval of patent application (5) in (3) of the two-stage type, Di ^ / bed packed in polished mass transfer fg β corpus with porous container structure contact with difluorinated oxygen reducing agent; System foaming; sub- "emulsion flow orifice restriction, gas control system (Sal: 3: or more to prevent calcium carbonate from accumulating in the aerosol system; magnetization of make-up water for polyester milk; (b) control of make-up water ρΗ; _ ί Water soda ash-lime hydration; and sedimentation or flocculation treatment of supplementary water; (9) The opening of the 4 ρ bar gas system is blocked, and the photoelectric screw port and heating of the sensing line of the exhaust line are restrained. It is used in the scrubbing section of the scrubber. 第79頁Page 79
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WO2000035573A1 (en) 2000-06-22
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CN1167497C (en) 2004-09-22
CN1367713A (en) 2002-09-04

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