TW492107B - Method and apparatus for solving device damage problem caused by peeled particles from the inner wall of a dry etching chamber - Google Patents

Abstract

The present invention relates to a method and the apparatus for solving device damage problem caused by the peeled particles, especially the polymer micro particles, from the inner wall of a dry etching chamber. The wafer stand of the etching chamber is located on the top portion of the dry etching chamber. When a wafer is loaded, the wafer is placed by making wafer surface face down in order to perform a plasma etching process. In order to prevent a wafer from falling down, the wafer stand is an electrostatic absorptive wafer stand with dual polarities. At first, a support frame is used to support the wafer when loading a wafer; then, the electrostatic absorptive wafer stand with dual polarities and the inductive coil are used to induce the corresponding dipole charges. After the wafer is absorbed, the support frame is removed and an etching process is conducted.

Description

492107

Field of the Invention: The present invention relates to a method and a device for dry etching defects in a semiconductor process, and particularly to a method of inverting an etching machine, and in a manner of 1, the polymer particles of an etching chamber are peeled off in the etching method, and thus, a point- Decisive problem. Item defect Background of the invention:

The ULSI integrated circuit 1C process is based on at least half a million crystals and / or capacitors on a chip. Since components and _ need to be connected, and a single component requires several layers of materials ^ Therefore, the 1C process requires not only the most advanced deposition technology, but also the improved lithography technology and etching technology to achieve the above-mentioned purpose. * Non-prospecting technology is critical to the limit of the smallest etching mask that can be formed. However, the good and bad of Yu Li 'technique is the key to whether the above-mentioned etching military curtain can be fully expressed ^ # Fruit. Due to the fact that the 1C-based material contains many layers, it can be constructed by continuous lithographic etching and deposition. In addition, some components are built on top of one component. For example, the relationship between the dynamic random storage memory DRAM capacitor and the transistor, and in order to increase the capacitance of the capacitor, it tends to be stacked higher, so as to avoid the lateral dimension and components due to the increased capacitance. The feature size also becomes larger at the same time. So obviously this will make the shape

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"Spect ratio; abbreviated as har) also adds problems, the most direct two can be as high as 12), the increase of har increases rapidly, because: Hour = engraved: bottom-contour maintenance and the upper half phase $,- The general situation is that the most obvious disadvantage of shrinking the shrinkage of the bottom contour is contact 2. In addition: the extreme case is that the speed of the contact hole has not yet reached the point where too much polymer is generated in the opening, so the contact hole is born. A bottleneck, and the electricity caused by the bottom bottleneck creates a bowing. No matter what the situation is, it is necessary to form a proper amount on the side wall of the contact hole if the contour of the contact hole is straight. In addition, the proper amount of polymer in the trench is usually necessary to make the contour of the trench straight. The contact hole is particularly large, and the difficulty is particularly difficult to ensure. Scattering of the slurry is required in the absence of high molecular weight, which is necessary. However, while forming the macromolecules on the side wall of the contact hole or trench, the inner wall of the #etching chamber is unavoidable, and the plasma gas for etching will also At the same time, it will cause the polymer film with poor adhesion to be deposited at the same time as the interior of the etching chamber. With the change of the ambient temperature, the idle time, the turbulence of gas ingress, pumping conditions, etc. Variations in external factors may cause these original polymer films with poor adhesion to peel off the interior walls of the column. Please refer to the schematic diagram of the conventional etching chamber 10 in FIG. 1. Among them, the wafer surface

492107 V. Description of the invention (3) Face up, the wafer back is adsorbed by the wafer holder 20 with a monopolar (mono-polar electric-static charge) or a bipolar electrostatic (static) charge To counter the cooling method of upward helium gas flow on the back of the wafer. The side wall of the remaining chamber 10 is a multi-pole magnet 30, and the top contains an insulating window 40 and an induction coil 50 (inducti〇I1 coi 1). Provided to provide sufficient magnetic field to guide the plasma to bombard exposed material on the wafer. Unfortunately, from the film, it will be correct, it is impossible to take the regular etching chamber wafer type, and it may not still suffer from the peeling of the polymer film electrical wall, the time it takes for the chamber to drop the contaminated crystals is as high as expected. The automatic cleaning of the wall can make sure that the molecules on the surface of the falling circle are performed as they are. The process of removing the polymer thin film on the interior wall is guaranteed to clean the particles that are neutral to the pollution and have a very natural quality. The polymer wafer is loaded into some positions on the surface, but the aforementioned method is the same as that in the uniform method. The method to overcome the above-mentioned film must be etched but will therefore affect the high score of the interior wall of the engraving. Therefore, the particles will be engraved, or money will cause the protective film there, so as to overcome the above problems. However, when the room is shut down, the polymer is dropped before the sub-film during the product cycle. If the money is in progress, you cannot get the money. The problem is to clean it regularly to take time. In addition, a batch of wafers

Therefore, the object of the present invention is to solve the above-mentioned problems by changing the relative positions of the elements of the etching chamber.

Page 6 V. Description of the invention (4) Purpose and summary of the invention The purpose of the present invention is to peel off the polymer. fProvide a solution to solve the problem of poor adhesion of the wall in the interior of the etching room, which causes the failure of the remaining time. The present invention discloses a dry money 丨 wall peeling grain +, especially the ancient eight; rural f device; Method for damage to components caused by the sons of the engraving chamber. 〆, etched j to the sun seat is located on the top of the dry etching chamber. With wafer face down 'for plasma puffing. To avoid = electro-adsorption crystal base. First, the wafer is first loaded by the supporting structure: bi-circle ', then by the bipolar electrostatic adsorption base and the induction coil. After the wafer is adsorbed, the support frame is removed, and then the dipole invention is described in detail: In view of the background of the invention, suitable molecules are formed on the sidewall of the M-contact hole during etching. It is very helpful to make the contact holes or trenches straight, but the plasma etching gas will also cause the deposition of polymer film at the same time. However: The wafer position of the traditional #etching chamber is located at the bottom of the surname etching chamber, and the wafer is facing up. If unfortunately, the polymer film with poor adhesion is peeled off from the interior wall of the etching chamber and dropped on the wafer, which will cause the # ^ # inscription to be incorrect and the etching will not proceed as expected. Even strict

492107

V. Description of the invention (5) After understanding the above background, the inventor proposes a method that can be solved. The method of the present invention is to place the wafer face down and in an upper position (that is, face up with the conventionally known wafer face up, And the bottom position is inverted.) After the above design changes, the southern molecular film with the interior wall peeled off is still contributed by gravity, but there is no wafer below. Therefore, the front side of the wafer is not contaminated. Please refer to the cross-section f shown in FIG. 2 for the related device of the engraved etching chamber according to the present invention " in the traditional etching chamber " The etching chamber i 00 of the present invention is opposite to the conventional etching chamber. The wafer base i i 〇 is at a relatively high position on the top. Therefore, after the wafer front side (side to be etched) of the wafer 115 is loaded into the etching chamber, it is supported by the support frame 120, and the support frame 丄 20 is moved upward to make the wafer 5 and the crystal Block 11 0 clings. To prevent the wafer from falling, two methods can be used. The first method is to use a support frame 120 and a wafer base 110 to embed each other to fix the wafer 115. The support frame 120 is not removed during the etching. Therefore, in this case, the frame portion of the supporting frame supporting the wafer needs to be considered not to protrude too much, so as to avoid the occurrence of invalid areas, so as to achieve the purpose of preventing the wafer from falling and not increasing the invalid area. Another option for the crystal base 110 is to select a bipolar electrostatic adsorption base. When the wafer 115 is loaded into the bipolar electrostatic adsorption wafer, the semiconductor substrate is still supported by the supporting frame 120, and then the semiconductor substrate is removed by the bipolar electrostatic adsorption method, and then the supporting frame 120 is removed, and then Etching. Since bipolar

Page 8 V. Description of the invention (6) The ten-year-old adsorption crystal base n 〇 is produced by a plurality of positively and negatively charged tn products on the crystal base n 〇. Therefore, the wafer 115 also senses the corresponding negative and positive electric dipoles to attract positive and negative electricity. When the bipolar electrostatic suction wafer n 5 is used, the support frame 1 2 0 can be released. Of course, the attraction of electrical attraction must be adjusted to high; the gravity of the Japanese yen and the impact of the crystal back coolant. Then, his insulated observation window 15o (dielectric wind〇w) is placed at the end of the surname engraved by the film. The induction coil 150 (induction coil) is provided by the foot-type current supply, which is also located below, as shown in the figure. Because the wafer surface is at the top, “For this reason, the plasma plasma needs to be oriented to ± to etch: but the electro-polymerized charged particles”, so as long as the magnetic force of the magnet 130 on the side of the etching chamber is properly adjusted, the plasma flow is directed upward. Last name carved: Φ secret becomes a problem. In addition, the polymer system produced by the plasma gas: surname 溥 film, even if it peels off the interior wall of the etching room, it will not be attracted by the magnetic force of the magnetic force or the electric property of the bipolar electrostatic adsorption wafer 110. But the way comes off. Because & uses the above wafer holder position above, and ;; =: ϋetchingϊ100 design will avoid the cycle time of the traditional polymer peeling ° π spear etching to the polymer film of the inner wall, so it can be clear ❿There will be no problem of peeling defects of polymer films in traditional etching indoor walls. The above description is only for the present invention. The private embodiment of the present invention is the preferred embodiment of Du * Zanyue, and is not intended to limit the patent application of the present invention. Reveal

492107 V. Description of the invention (7) Equivalent changes or modifications made in the spirit should be included in the scope of patent application as described below. 1 ^ 1 Page 10 492107 Simple illustrations Simple illustrations: The preferred embodiment of the present invention will be explained in more detail in the following explanatory text with the following figures: Figure 1 shows a traditional etching chamber, wafer Cross-sectional view of the relative positional relationship of the base, wafer, and plasma. FIG. 2 is a cross-sectional view of the relative positional relationship between the wafer holder, wafer, and plasma in the etching chamber designed according to the method of the present invention. The positions of the wafer holder and the wafer are in an inverted relationship compared with the conventional method.

Drawing number comparison table: Etching chamber 1 0, 1 0 0 Wafer 2 0, 11 0 Wafer 1 5, 11 5 Support frame 120 Magnet 130b Insulating view window 40, 140 Response coil 5 0 , 1 5 0

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Claims (1)

492107 Sixth, the scope of patent application method: • A method for solving components caused by peeling particles in a dry-type room wall, the method includes at least the following steps:% loading a semiconductor substrate into a wafer seat on the top of the dry-etching chamber, and the semiconductor substrate The wafer is facing down to perform electrical installation. 2 · As in the method of the first scope of the patent application, wherein the above-mentioned wafer holder is supported by a support frame, the semiconductor substrate is embedded on the wafer holder. 3. The method according to item 1 of the patent application, wherein the above-mentioned crystal base is a bipolar electrostatic adsorption crystal base, which can be used to adsorb the semiconductor substrate. 4. The method according to item 3 of the scope of patent application, wherein the above-mentioned semiconductor substrate is implanted into a bipolar electrostatic adsorption crystal base, and the semiconductor base is first supported by a support frame, and then the semiconductor substrate is electrostatically adsorbed by bipolar, and then removed The support frame is then etched. 5. The method according to item 3 of the scope of patent application, wherein the above-mentioned semiconductor substrate is implanted into a bipolar electrostatic adsorption crystal base, and the semiconductor base is first supported by a support frame, and then the semiconductor substrate is electrostatically adsorbed by the bipolar, and then walk Etching. 6. The method according to item 1 of the scope of patent application, in which the above-mentioned inner wall exfoliates particles of electrically neutral particles. Page 12 492107 t / revision / correction / _exemption 6. Scope of patent application 7. The method according to item 6 of the patent scope, wherein the above-mentioned electrically neutral particles are polymers produced by etching plasma gas. 8. The method according to item 1 of the patent application range, wherein the dry etching chamber in the above-mentioned plasma gas flow direction is guided upward by magnetic force to etch the semiconductor substrate. 9. A dry etching chamber device for solving the damage caused by peeling particles on the wall of a dry etching chamber, the dry etching chamber device at least comprises: a crystal seat on the top of the dry etching chamber; and a movable support frame for holding a A semiconductor substrate with a wafer surface of the semiconductor substrate facing downward to face a plasma gas below the plasma substrate, the plasma gas guiding the plasma gas for etching upward with a magnetic force. 10 · The device according to item 9 of the scope of patent application, wherein the above-mentioned crystal base is a bipolar electrostatic adsorption crystal base. 1 1. The device according to item 9 of the scope of patent application, wherein the above-mentioned inner wall exfoliates particles of electrically neutral particles. 12. The device according to item 11 of the scope of patent application, wherein the above-mentioned electrically neutral microparticles are polymers produced by etching plasma gas. 1 3. The device according to item 9 of the scope of patent application, wherein the above-mentioned crystal base is supported by a support frame and the semiconductor substrate is embedded on the crystal base.