TW491406U - Gallium nitride-based III-V group compound semiconductor device having an ohmic electrode - Google Patents
Gallium nitride-based III-V group compound semiconductor device having an ohmic electrodeInfo
- Publication number
- TW491406U TW491406U TW90209918U TW90209918U TW491406U TW 491406 U TW491406 U TW 491406U TW 90209918 U TW90209918 U TW 90209918U TW 90209918 U TW90209918 U TW 90209918U TW 491406 U TW491406 U TW 491406U
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- compound semiconductor
- gallium nitride
- ohmic electrode
- group compound
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12489093A JP2803742B2 (ja) | 1993-04-28 | 1993-04-28 | 窒化ガリウム系化合物半導体発光素子及びその電極形成方法 |
JP12931393A JP2748818B2 (ja) | 1993-05-31 | 1993-05-31 | 窒化ガリウム系化合物半導体発光素子 |
JP20727493A JP2783349B2 (ja) | 1993-07-28 | 1993-07-28 | n型窒化ガリウム系化合物半導体層の電極及びその形成方法 |
JP23468493A JP2697572B2 (ja) | 1993-09-21 | 1993-09-21 | 窒化ガリウム系化合物半導体発光素子 |
JP23468593A JP2770717B2 (ja) | 1993-09-21 | 1993-09-21 | 窒化ガリウム系化合物半導体発光素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW491406U true TW491406U (en) | 2002-06-11 |
Family
ID=27527053
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW083103775A TW403945B (en) | 1993-04-28 | 1994-04-27 | Gallium nitride based III - V group compound semiconductor device having an ohmic electrode and producing method thereof |
TW90209918U TW491406U (en) | 1993-04-28 | 1994-04-27 | Gallium nitride-based III-V group compound semiconductor device having an ohmic electrode |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW083103775A TW403945B (en) | 1993-04-28 | 1994-04-27 | Gallium nitride based III - V group compound semiconductor device having an ohmic electrode and producing method thereof |
Country Status (1)
Country | Link |
---|---|
TW (2) | TW403945B (zh) |
-
1994
- 1994-04-27 TW TW083103775A patent/TW403945B/zh not_active IP Right Cessation
- 1994-04-27 TW TW90209918U patent/TW491406U/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TW403945B (en) | 2000-09-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4K | Issue of patent certificate for granted utility model filed before june 30, 2004 |