TW491406U - Gallium nitride-based III-V group compound semiconductor device having an ohmic electrode - Google Patents

Gallium nitride-based III-V group compound semiconductor device having an ohmic electrode

Info

Publication number
TW491406U
TW491406U TW90209918U TW90209918U TW491406U TW 491406 U TW491406 U TW 491406U TW 90209918 U TW90209918 U TW 90209918U TW 90209918 U TW90209918 U TW 90209918U TW 491406 U TW491406 U TW 491406U
Authority
TW
Taiwan
Prior art keywords
semiconductor device
compound semiconductor
gallium nitride
ohmic electrode
group compound
Prior art date
Application number
TW90209918U
Other languages
English (en)
Inventor
Shuji Nakamura
Takao Yamada
Masayuki Senoh
Motokazu Yamada
Kanji Bando
Original Assignee
Nichia Kagaku Kogyo Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12489093A external-priority patent/JP2803742B2/ja
Priority claimed from JP12931393A external-priority patent/JP2748818B2/ja
Priority claimed from JP20727493A external-priority patent/JP2783349B2/ja
Priority claimed from JP23468593A external-priority patent/JP2770717B2/ja
Priority claimed from JP23468493A external-priority patent/JP2697572B2/ja
Application filed by Nichia Kagaku Kogyo Kk filed Critical Nichia Kagaku Kogyo Kk
Publication of TW491406U publication Critical patent/TW491406U/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
TW90209918U 1993-04-28 1994-04-27 Gallium nitride-based III-V group compound semiconductor device having an ohmic electrode TW491406U (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP12489093A JP2803742B2 (ja) 1993-04-28 1993-04-28 窒化ガリウム系化合物半導体発光素子及びその電極形成方法
JP12931393A JP2748818B2 (ja) 1993-05-31 1993-05-31 窒化ガリウム系化合物半導体発光素子
JP20727493A JP2783349B2 (ja) 1993-07-28 1993-07-28 n型窒化ガリウム系化合物半導体層の電極及びその形成方法
JP23468593A JP2770717B2 (ja) 1993-09-21 1993-09-21 窒化ガリウム系化合物半導体発光素子
JP23468493A JP2697572B2 (ja) 1993-09-21 1993-09-21 窒化ガリウム系化合物半導体発光素子

Publications (1)

Publication Number Publication Date
TW491406U true TW491406U (en) 2002-06-11

Family

ID=27527053

Family Applications (2)

Application Number Title Priority Date Filing Date
TW083103775A TW403945B (en) 1993-04-28 1994-04-27 Gallium nitride based III - V group compound semiconductor device having an ohmic electrode and producing method thereof
TW90209918U TW491406U (en) 1993-04-28 1994-04-27 Gallium nitride-based III-V group compound semiconductor device having an ohmic electrode

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW083103775A TW403945B (en) 1993-04-28 1994-04-27 Gallium nitride based III - V group compound semiconductor device having an ohmic electrode and producing method thereof

Country Status (1)

Country Link
TW (2) TW403945B (zh)

Also Published As

Publication number Publication date
TW403945B (en) 2000-09-01

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Legal Events

Date Code Title Description
GD4K Issue of patent certificate for granted utility model filed before june 30, 2004