TW403945B - Gallium nitride based III - V group compound semiconductor device having an ohmic electrode and producing method thereof - Google Patents

Abstract

This invention relates to a gallium nitride based III - V group compound semiconductor device, and such semiconductor device comprises a gallium nitride based III - V group compound semiconductor layer on a substrate and an ohmic electrode provided on contact with the semiconductor layer. The foregoing ohmic electrode includes a metallic material and has been annealed at the temperature above 400 DEG C.

Description

403945 V. Description of the invention (2) The plutonium which is applied with a predetermined current to achieve its light emitting function is directly mounted on the substrate itself. Both the P electrode and the η-electrode must be directly connected to the other compound semiconductor layer and the n-type compound semiconductor layer to form. The p-electrode ensures that a uniform current is added to the P-type compound semiconductor, and in order to obtain uniform light emission from the device, the P-type layer is almost completely formed. However, in the past, the P electrode was non-translucent, and the light emission of the past light-emitting device was not able to reduce the efficiency of external electrons caused by the decrease in light emission of the PS electrode. Observe the opposite direction of the formed substrate. Therefore, if the conventional compound semiconductor light-emitting device is fixed in a lead frame, since the substrate surface on which the compound semiconducting layer is not formed faces upward and the P pen electrode and the η electrode are below, the lead frame must be used. Carrying. That is, a semiconductor thin film must be carried on a lead frame. At this time, in order to avoid the electrical short circuit between the P-type compound semiconductor layer and the η-type compound semiconductor layer, it is necessary to ensure a certain interval between the leadframes. Magnify to about 1mm2 or more. Therefore, in the conventional device structure, the number of sheets obtained from one M wafer (Wafer) inevitably decreases. In addition, it is necessary to make the positions of the two lead frames very fine, and the delicate etching technology of the gallium nitride semiconductor is also necessary.喳 f 铕 铕 夬 缥 夬 缥 员工 The staff consumer cooperatives printed by the Bureau of quasi-Bureau Bureau "~; f first '"? f Note on the back and then write too much page) The second line, although there is a Lan Yu Nig pole, as above, It seems that it is possible to realize the P-η junction nitrided IV group compound semiconducting fluorene light-emitting device. However, it is recently clear that, in the light-emitting device of the MIS-type structure encountered, the high resistivity is used due to the pseudo-electricity. The short-key-barrier of the i-type layer (short-key-barrier >, η® is hardly noticed. The conventional MIS structure nitrided stripe H-V group compound semi-conducting fluorescein coat paper size meets / H "Ugly" standard iiUXSj A 4 specifications ι 210χ · 297 public loan 403945 A6 B6 Central Bureau of Standards of the Ministry of Economic Affairs®: printed by the Industrial and Consumer Cooperatives V. Description of the invention (1) **** Background of the invention **** A gallium nitride-based m-V group compound semiconductor device having an ohmic electrode and a manufacturing method thereof. **** Explanation of related technologies **** In recent years, gallium nitride (GaN) and aluminum gallium nitride (GaAIN) have been used. GaN-based H-V group compound semiconductor materials such as gallium hafnium nitride (InGaN), gallium indium aluminum nitride (inAlGaN), etc. Attention. This light-emitting device usually has a structure in which an n-type gallium nitride-based compound semiconductor layer is laminated on a substrate and a p-type dopant-doped gallium nitride-based M-V compound semiconductor layer. Previously, the gallium nitride-based M-V compound semiconductor layer doped with P-type impurities was still a high-resistance i-type, so the previous device was a so-called MIS-type structure. Recently, the high-resistance i-type layer was transformed into Low-resistance P-type layer technology, as disclosed in Japanese Patent Application Laid-Open No. 2-257679, Hikai Patent No. 3_218325, and Japanese Patent Application No. 5_183189. It seems that a pn-junction type gallium nitride-based II-V group compound has been realized Semiconductor light-emitting devices. However, if the P-η junction type gallium nitride-based compound semiconductor can be realized, various problems of electrodes formed on the P-type layer and / or the η-type layer are clearly understood. ρ-η junction type gallium nitride-based group I-V compound semiconductor light-emitting devices have manufacturing restrictions. Among the compound semiconductor layers, a P-type compound semiconductor layer is the uppermost layer. In addition, transparent sapphire is generally used. (Sapphire ) Substrate as the substrate of the device. Unlike the semiconductor substrates such as gallium arsenide and gallium phosphide used in other semiconductor light-emitting devices, sapphire is not insulating, so the device cannot be used for compound semiconductors.

{Dragon first read the precautions on the back and then fill in this page. J Binding. Binding .. Thread paper size order (CNS) f 4 specification (210X297 mm) No. 83103775 Patent Application Chinese Specification Amendment Page (March 90)

(4-0 ^ V. Description of the invention (i **** Background of the invention ****) The present invention relates to a gallium nitride-based ffl_v group compound semiconductor device having an ohmic electrode and a method for manufacturing the same. **** Related Explanation of technology **** In recent years, gallium nitride (GaM), aluminum gallium nitride (GaA1N), gallium nitride (InGaN), ytterbium nitride aluminum (InAlGaN), and other gallium nitride-based I- Group V compound semiconductor and material light-emitting devices have attracted attention. This light-emitting device usually has an n-type gallium nitride-based compound semiconductor layer on the substrate, and a gallium nitride-based dopant dopant] j -Laminated structure of -v compound semiconductor eyebrows 0 Previously, gallium nitride-based m-V group compound semiconductor layers doped with p-type impurities were still high-resistance i-types, so the past devices were so-called MIS-type structures Recently, the technology of converting high-resistance i-type / 1 to low-resistance p-type eyebrows, as disclosed in No. 2_257679, No. 3_218325, and No. 5_183189, seems to be able to achieve p_n junction type GaN-based I-V compound semiconductor light-emitting device. However, if this is a pn junction type nitride H If a compound semiconductor is to be realized, the various problems of electrodes formed on the p-type layer and / or the η-type layer are well understood. '' In current P-η junction type gallium nitride, II-V group compound semiconductors The light-emitting device is limited by its manufacturing. Among the compound semiconductor layers, there is a P-type compound semiconductor layer at the top. In addition, a transparent sapphire substrate is generally used as the substrate of the device. The semiconductor substrates like gallium arsenide and aluminum gallium phosphide are different on other semiconductor light-emitting devices. Because blue sapphire is insulating, the device cannot use

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(Make-up "« Notes on the back side * Matters and then fill in this page J. Binding. ¾ Ministry of Economic Affairs »Zhunji only eliminates f cooperative printing ft paper method again 3« quasi (CNS > T 4 specifications (210χ 297 male 403945 V. Description of the invention (2) The plutonium, which adds a predetermined current to achieve its light-emitting function, is directly mounted on the substrate itself. Both the P electrode and the n-electron must be directly connected to the pin. The compound semiconductor layer and the n-type compound semiconductor layer are formed on the p-type electrode. The ρ electrode ensures that a uniform current is applied to the P-type compound semiconductor, and in order to obtain uniform light emission from the device, the P-type layer is almost comprehensive. However, in the past, the P electrode was non-translucent, and the light emission of the past light-emitting device. In order to avoid the deterioration of the efficiency of the external electrons caused by the decrease in the light emission of the PS electrode, it was not possible to use the PS compound semiconductor layer and the Observe the opposite direction of the substrate formed by the compound semiconductor. Therefore, if the conventional compound semiconductor light-emitting device is fixed in a lead frame, the substrate surface of the compound semiconductor layer is not directed upward. The P pen electrode and the η electrode are below, and must be carried by a lead frame. That is, a storage semiconductor thin film must be carried across the lead frame. At this time, in order to avoid the P-type compound semiconductor layer The electrical short circuit with the n-type compound semiconductor layer must ensure a certain degree of space between the difluoride lead frame, and the size of the monocrystalline square of the natural semiconductor must also be enlarged to about 1 mm2. Therefore, in In the conventional device structure, the number of wafers obtained by an M wafer (Wafer) will inevitably be reduced. Moreover, the positions of the two lead frames are very closely matched, and the delicate etching of the gallium nitride semiconductor is performed. (Etching) technology is also necessary. For the consumer consumer cooperatives of the Provincial Bureau of Occupation and Procurement Bureau, "quote ~; f first '"? F Note on the back and then write too many pages) The second line, although there is Nig pole, and just like the above, it seems that the P-η junction type nitride compound IV compound semiconducting fluorene light-emitting device can be realized, but it is recently clear that in the light-emitting device of the MIS type structure encountered, because Xiao Yingji's Obstacles Using Electrically Resistant i-layers with High Resistivity short-key-barrier >, η® is hardly noticed. The conventional MIS structure nitrided strip H-V group compound semiconducting 靥 shiny paper size meets / H ugly 孓 standard iiUXSj A4 specifications ι210χ · 297 public loan 403945 A6 B6_ 5. Description of the invention (3) The η electrode material of the device, as shown in JP 5S_9442, is aluminum or its alloy. Moreover, indium is often used. However, aluminum and Indium is rare to have sufficient contact ohms with the n-type gallium nitride-based] j -V group compound semiconductor layer, and it has also been found that the conductivity is easily lost due to the deterioration of the electrode due to anneal. In short, an electrode material jitter capable of sufficiently satisfying the contact ohms with a gallium nitride-based I-V compound semiconductor has not been achieved in the past. **** Abstract of the Invention **** Accordingly, an object of the present invention is to provide a gallium nitride-based M-V compound semiconductor light-emitting device having a contact ohmic with a gallium nitride-based I-V compound semiconductor layer, and Its manufacturing method. Another object of the present invention is to provide a gallium nitride-based E-V compound semiconductor light-emitting device including a P electrode capable of observing light emission of a light-emitting device from a gallium nitride-based I-V compound semiconductor layer formed on a substrate, and Its manufacturing method. Another object of the present invention is to provide a gallium nitride I-V group compound semiconductor light-emitting device that achieves an n-electrode having good contact ohms with an n-type gallium nitride-based I-V group compound semiconductor layer and a method for manufacturing the same. A first feature of the present invention is: a substrate A semiconductor layered structure formed on the substrate and comprising an n-type gallium nitride-based I-V compound semiconductor layer and a p-type gallium nitride-based H-V compound semiconductor layer. A first electrode formed by being connected to the n-type semiconductor layer and a light-transmitting second electrode including a metal material by being connected to the p-type semiconductor layer. This paper is applicable to China National Standard (CNS) f 4 specifications. (210X297 male; '............................. ....................................... ........ order .............. line < Please read the notes on the back before filling in this page} Printed by the Central Economic and Technical Cooperation Bureau of the Ministry of Economic Affairs ΛΗConsumer Cooperative Cooperative Printed by the Central Economic and Social Service Administration of the Ministry of Economic Affairs Printed by the Consumer Cooperatives A64 »Tear 5--2S ___ 5. Description of the Invention (4) A gallium nitride-based group M-V compound semiconductor device including these two electrodes. The above-mentioned second electrode (P electrode) is formed by connecting a metal material layer to a p-type semiconductor layer and smelting the metal material layer, so that the metal material layer is light-transmissive and can be formed to reach the P-type semiconductor layer. Contact ohms. A second feature of the present invention is that: a semiconductor layered structure including an n-type gasification graft II-V group compound semiconductor layer and a p-type gallium nitride-based] I-V group compound semiconductor layer is provided on the substrate, and the η is connected And a second electrode formed by connecting the p-type semiconductor layer with a titanium-type semiconductor layer and gold, and a second electrode formed by connecting to the p-type semiconductor layer] II-V group compound semiconductor Luminescent device. The first electrode (η electrode) is formed by connecting an alloy layer containing titanium, aluminum, or gold, or a multilayer structure containing a titanium layer and aluminum or gold, to an n-type semiconductor layer, and smelting it. An ohmic contact with the n-type semiconductor layer is formed. A third feature of the present invention is: a substrate. A semiconductor laminated structure including an n-type gallium nitride-based I-V compound semiconductor layer and a p-type gallium nitride-based I-V compound semiconductor layer formed on the substrate. A first electrode including titanium, aluminum, or gold formed by connecting the n-type semiconductor layer, and a light-transmitting second electrode including a metal material formed by connecting the p-type semiconductor, and a gallium nitride system including the two electrodes is provided. Group II-V compound semiconductor device. The fourth feature of the present invention is: '' The gallium nitride-based M-V compound semiconductor layer formed on the substrate, ^ Paper size: National Standard (CNS) A4 specification (210X297 mm) (Please read first Note on the back, please fill in the nest page). Binding. Thread A6 B6 408945 5. Description of the invention (5) < Please read the precautions on the back before filling in this page) and it is formed by connecting to the semiconductor layer. The electrode containing metal material is smelted to achieve ohmic contact with the semiconductor layer. Nitriding with both is provided. Gallium-based Π-V compound semiconductor device. **** Brief Description of Drawings **** FIG. 1 is a schematic cross-sectional view showing a state where a lead frame of a light emitting device according to a first aspect of the present invention is mounted. Fig. 2 is a graph showing the current-shock characteristics of the p-electrode of the present invention (1 scale on the X axis is 0.5 V, and 1 scale on the Y axis is 0.2 mA). 3 is a plan view of a light emitting device according to a second aspect of the present invention. FIG. 4 is a sectional view taken along the line IV-IV in FIG. 3. Figure 5 is a perspective view of a modification of the second aspect of the present invention. Fig. 6 is a sectional view of a light emitting device according to a third aspect of the present invention. Fig. 7 is a cross-sectional view of a first modification of the third aspect of the present invention. Fig. 8 is a sectional view of a second modification of the third aspect of the present invention. Fig. 9 is a plan view of a third modification of the third aspect of the present invention. Line 10 is a cross-sectional view of a semiconductor light emitting device according to a fourth aspect of the present invention. 11A to 11D are graphs showing the current-voltage characteristics of different η electrodes of the present invention at the same time as the comparative example (1 scale on the X-axis of each figure is 0.5 V ^ 1 scale on the y-axis is 50 Pa). 12A to 12D are current-voltage characteristics of different η electrodes other than the present invention, and are shown at the same time as the comparative example (1 scale on the X axis of each figure is 0.5V) , 1 scale of the Υ axis is 50 Qiu). 13A to 13D are diagrams showing current-voltage characteristics of different η electrodes of the present invention at the same time as the comparative example (1 scale of each figure is 0.5 V, and 1 scale of the y-axis is 50; ua). This paper size is applicable to China National Standard (CNS) T4 (210x297 mm) 403945 Printed by the Central Government of the Ministry of Economics and printed by Shellfish Consumer Cooperatives A6 B6_ 5. Description of the invention (6) Figure 14 A to Figure 14 The current-voltage holding characteristics of different η electrodes outside the invention are shown at the same time as the comparative examples (the X-axis 1 scale of each figure is 0.5 V, and the y-axis 1 scale is 50; ua). FIG. 15 is a diagram illustrating the adhesion test of the η electrode. Fig. I6 is a partial sectional view of a semiconductor light emitting device according to a fifth aspect of the present invention. The current-voltage characteristics of the different η electrodes of the fifth aspect of the invention are shown simultaneously with ft parameter Λ (the X-axis 1 scale in each figure is 0.1 SV, and the 1-axis scale is 50 jua). **** Detailed description of specific embodiments **** The so-called gallium nitride-based Group IV compound semiconductor in the present invention is a nitride semiconductor containing Group I elements of the periodic table such as GaN, GaAIN, InGaN, and nAlGaN. meaning. These compound semiconductors can be represented by the formula In A1 Ga N, where xS 1, 1, x + y Yun 1 0 x y 1-x-y, and the so-called contact ohms in the present invention are generally used in the semiconductor field. The light-transmitting property of the electrode in the present invention means that the light emitted from the gallium nitride-based H-V group compound semiconductor light-emitting device transmits at least 1%, and is not necessarily colorless and transparent. The light-transmitting electrode is generally a light emitted from a gallium nitride-based] I-V group compound semiconductor light-emitting device such that 20 to 40% or more of the light is transmitted. In addition, if the metal material of the present invention contains two or more kinds of metals, two or more kinds of metals may be alloyed in advance, or each metal layer may be laminated. When the metal material contains two or more metals, although the ratio of these metals is not particularly limited, each metal preferably contains at least 0.1 atomic%. {Please read the notes on the back before filling this page.) This paper size is applicable to China National Standards (CNS) A4 specifications (210X297) * 403945 Α6 Β6 Printed by the Ministry of Economic Affairs, Central Government Standards Bureau, Beiya Consumer Cooperatives. DESCRIPTION OF THE INVENTION (7) Hereinafter, the present invention will be described in detail with reference to the drawings. Throughout the figure, the same place is represented by the same symbol. FIG. 1 is a schematic display of a gallium nitride-based group I-V compound semiconductor light-emitting device 10 according to a first aspect of the present invention. This light emitting device (LED) 10 is a transparent and insulating substrate 11 having sapphire or the like. The n-type gallium nitride-based M-V group compound semiconductor layer 12 covering the entire main surface 11a of one side of the substrate 11 is formed with a thickness of 0.5 to 10 μm. Although the n-type semiconductor layer I2 is preferably not doped with impurities, it is preferably doped with n-type impurities such as silicon, germanium, culvert, sulfur, tellurium, and the like. The surface of the n-type semiconductor layer 12 is formed by a thickness of p-type gallium nitride-based] H-V group compound semiconductor layer I3 from 0.01 μxη to Sjam. The p-type semiconductor layer I · 3 is doped with p-type impurities such as zinc, magnesium, beryllium, ytterbium, and barium, and is tempered at a temperature of ¢ 400 ° or higher (for the tempering, refer to Hirakai Hei 5-183189). The P-type semiconductor layer 13 is locally etched and removed simultaneously with the surface layer of the n-type semiconductor 12, so that the surface of the n-type semiconductor layer 12 is partially exposed. An n-electrode 14 is formed on the exposed surface of the n-type semiconductor layer 12. The P electrode 1S of the present invention is formed by substantially covering the entire p-type semiconductor. The P electrode 1S is a light-transmitting ohmic electrode made of a metal material. The metal material forming the ρ electrode 1S is not particularly limited. For example, the P electrode material is made of one or more metals selected from gold, nickel, platinum, aluminum, tin, indium, chromium, and titanium. The metal material that can achieve the ideal contact ohms contains at least two metals from the group consisting of chromium, nickel, gold, titanium and platinum. A particularly desirable material for the golden dam is to contain gold and nickel. Gold and nickel are nickel layers which directly contact the P-type semiconductor layer 13, and it is desirable to be able to form a metal thereon. As mentioned above, when the metal material contains more than two kinds of metals, they are not allowed to use the national paper standard (CNS) A4 in the paper standard (21〇 parent 297 gold) (Please read the precautions on the back before filling in (This page). Binding and binding. Printed by the Central Bureau of Standards and Quarantine of the Ministry of Economic Affairs and printed by Shellfish Consumer Cooperative Co., Ltd. 403945. 5. Description of the invention (8) Laminated structure with various metal layers or pre-alloying is good. The metallic material having a laminated structure is alloyed by refining as described later. The P electrode 15 is formed by forming a metal material layer on the p-type semiconductor layer 13 by using a common coating technique such as evaporation and sputtering, and then smelting the metal material layer. Smelting is ideally carried out at a temperature above 400 ° C. In the case of smelting at a temperature of less than 400 ° C, it has been shown that the metal material layer and the p-type semiconductor layer 13 are difficult to form a sufficient contact ohm. Smelting is performed at a temperature lower than the decomposition temperature of the gallium nitride-based Group I-V compound semiconductor (about 120 (TC)), and the refining time is preferably from 0.01 to 30 minutes. The effect of this refining is similar to The effect described in the above-mentioned Japanese Patent Application No. 5_183189 is the same. That is, when grown by a vapor phase growth method, a gallium nitride-based I-V compound semiconductor layer containing p-type impurities is smelted at a temperature of 4,000 ° C or higher. As a result, the resistivity decreases sharply. Hydrogen atoms bound to the acceptor in the semiconductor crystal are driven out by smelting, so the impurity of the acceptor is activated. Therefore, the electrode is used at a temperature above 400 ° C. Smelting effectively increases the carrier concentration of the gallium nitride M-V group compound semiconductor doped with P-type impurities into accessible contact ohms. The ideal material for contact ohms on this p-type semiconductor layer 13 is transparent. It does not matter whether or not there is lightness. It is a metal material containing gold and nickel. The metal material used in the P electrode 1S is preferably formed to a thickness of 0.001 μm to 1 Mm after smelting. Due to the smelting, the metal material layer Spread to P-type half At the same time as the inside of the body layer I3, a part of it is scattered to the outside to make the thickness thinner. The thickness of the metal material layer can be adjusted by using the desired final thickness of 0.00lwm to ίμη after smelting, so that the ρ electrode 15 can have ideal light transmission Even if the thickness is exceeded, it will not be a big problem, but for this reason, the electrode will be printed on a paper-by-paper basis (《Η Η 上 家 样 准 (CNS) A4 size (210x297 mm) ......... ........................................ ................................................玎 .............. line (Please read the notes on the back before filling out this page) 403945 A6 B6 Printed by the company V. Description of the invention (9) Increasingly, it tends to have a metallic color and reduce the light transmittance. The thickness of the P electrode 15 is preferably as thin as possible from the viewpoint of light transmittance within the above range. However, if it is too thin, the contact resistance between the electrode 15 and the p-type semiconductor layer 13 tends to increase. For this reason, the thickness of the ytterbium electrode 15 is preferably 0.005 to 0.2 and ^, particularly preferably 0.01 to 0.2 μm. The P electrode of the present invention is light-transmissive, and achieves an ideal contact ohm with a P-type semiconductor. The electric rigidity of the light-emitting device is reduced in the forward direction, and the light-emitting efficiency of the device is improved. **** Experimental example 1 **** On the zinc-doped p-type GaN layer, the nickel layer and the upper gold layer were sequentially individually vapor-deposited to a thickness of 0.1 μm, smelted at 600 ° C, and these alloyed At the same time, it became transparent to obtain a P electrode, and its thickness was 0.03 jum. The current-voltage characteristics of this p-electrode are shown by line A in Fig. 2. From this figure, it can be seen that the P electrode and the P-type GaN-based I-V achieve a good contact ohmic with the compound semiconductor. As described above, the light-emitting device 10 of the present invention including the transmissive ohmic P electrode 15 can observe light emission through the p-electrode 15. Therefore, as shown in FIG. 1, as a means of a light-emitting device using a semiconductor other than a gallium nitride-based compound semiconductor, a substrate U without a semiconductor layer on the bottom surface of a generally used cap-shaped lead frame I8, that is, the first The 1 main surface 11 a and the second main surface lib opposite to the main surface 11 a may be placed facing the lead frame 18. The P electrode 15 has a bonding pad I7 formed on a part thereof, and is connected to a gold wire-like bonding wire 21 connected to other lead frames (metal pillars) 19. The electrode 14 is gold-like. The bonding wire 20 is connected to the cap-shaped lead frame I8. In the ideal case of the present invention, the bonding pad 17 is ideally a metal material formed of gold or gold with an inscription alone, or two or more metals containing no chromium. The paper scale is quickly used in China National Standard (CNS) A4. Specifications (210X297mm) " " " " (Please read the precautions on the back before filling in this page) Binding and binding., -Line. A6 B6 403945 V. Description of the invention (10) (Please read first Note on the back, please fill out this page again) Metal materials containing aluminum or gold without chromium, such as gold, titanium, nickel, indium and / or platinum-containing materials. The bonding pad made of such a metal material has good connection with the P electrode 13, and gold wire and wire are bonded, and sometimes it has good connection with a ball formed of gold wire. Furthermore, such a metal material hardly migrates to the P electrode during smelting or is energized to the device to emit light, thereby deteriorating the P electrode (decreasing light transmittance). Metal materials containing aluminum or chromium may migrate to the p-electrode for a relatively short period of time (such as 500 hours) during power-on, which will deteriorate it. **** Experimental example 2 **** Using a sapphire substrate as the substrate 11, an n-type GaN layer having a thickness of 4Λ1ΠI as an n-type semiconductor layer, and a magnesium-doped p-type GaN layer having a thickness of ljuiu as a p-type semiconductor layer, An adhesive pad composed of various metal materials is formed on the P electrode 15 of the device shown in FIG. 1. The P electrode 15 is obtained by vapor-depositing a nickel layer and a gold layer to a thickness of 0,1 μm, and smelting them at 600 ° C to alloy and make those metals transparent, thereby obtaining a thickness of 0.05 wm. More specifically, an adhesive pad was formed on the P electrode from the adhesive pad material shown in Table 1 below. That is, the bonding pad is formed by directly depositing the metal layer shown in the column of Table 1 on the P electrode, and the metal layer shown in the row of Table 1 is vapor-deposited, and is simultaneously formed during the smelting of the P electrode. The bond line is gold. The light-emitting device thus obtained was allowed to emit light continuously for 500 hours to investigate the effect of the bonding pad on the P electrode. The results are described in Table 1. The paper size printed by the Central Bureau of Standards, the Ministry of Economic Affairs, Shellfish Consumer Cooperative, is applicable to the specifications of the National Standards (CNS) A4 (210X297 mm) 403945 A6 B6 V. Description of the invention (11) Table 1 Gold-nickel titanium titanium I white aluminum Chrome gold is very good good good bad bad bad nickel is good----bad-titanium good one---bad-marriage good one----bad-platinum good one---bad bad aluminum bad bad bad bad bad Chrome bad---one bad- < Please read the meanings on the back of the page before writing this page). The "quote" in Table 1 printed by the Central Bureau of the Ministry of Economic Affairs and the Shellfish Consumer Cooperatives printed on the table is "good" even after 500 hours of light , The adhesive pad is completely unchanged, but still maintains the initial light transmission, and shows that the ohmic characteristics of the contact between the P electrode and the P-type semiconductor layer have not changed; " Good " Slight discoloration, but does not cause conscious attenuation of light emission, and the contact ohmic characteristics of the P electrode and the P-type semiconductor layer show no change; " bad " refers to the loss of light transmission of the P electrode, and It shows the loss of the contact ohmic characteristics of the P electrode and the P-type semiconductor layer; it means that it has nothing to do with the discoloration of the P electrode, the connection with the gold ball is poor, and the wire bonding is a difficult bonding pad. As shown in Table 1, when Ni-Au is used to form the P electrode, if the same material as the p-electrode material, that is, Ni-Au is used to form the bonding pad, the p-electrode does not change color at all and still maintains light transmission. Moreover, the same results can be obtained when using gold alone to form the bonding pad. However, both chromium and aluminum are very easy to migrate to the P electrode. The size of the paper used in the book is based on the Chinese National Standard (CNS) A4 specification (210x297 mm) A6 B6 403945 5. Description of the invention (12) The inclusion of gold also deteriorates the characteristics of the P electrode. **** Experimental Example 3 **** The same experiment as Experimental Example 2 was performed except that the p-electrode was formed of Au-Ti (the ohmic characteristics of this p-electrode are slightly inferior to those of the Ni-AU electrode). As a result, the case of using gold or Au-Ti alone to form the bonding pad is " very good ", a metal material composed of gold and aluminum, or a metal other than chromium (ie, nickel, titanium, indium, or platinum) The formation is "good", and the metal material composed of gold and aluminum, or chromium is formed, and the result of "bad" is obtained. **** Experimental Example 4 **** The same experiment as Experimental Example 2 was performed except that the p-electrode was formed using AU-A1 (the ohmic characteristics of this p-electrode are slightly inferior to those of the Ni-AU electrode). As a result, π is very good when forming the bonding pad with gold alone. "It is good to form a metal material composed of gold and aluminum, or a metal other than chromium (ie, nickel, titanium, hafnium, or platinum)." "In the case of using a metal material composed of gold and aluminum to form the bonding pad, the same material as that of the P electrode is the" bad "result. Moreover, the case of a metal material composed of gold and chromium is also a result of "defect". Fig. 3 is a plan view of a semiconductor light emitting device according to a second aspect of the present invention, and Fig. 4 is a view taken along line IV-IV of Fig. 3 Sectional view. This situation is particularly related to the improvement of the bonding pad for the p electrode. As shown in these figures, a notch 311 is provided on the transparent P electrode 15 to expose a part of the surface of the P-type semiconductor layer 13. The pad 32 is electrically connected to the P electrode while being strongly connected to the p-type semiconductor layer 13 through this notch 311. In the situation shown in the figure, the adhesive pad 32 is not only buried in the notch 311, but extends to surround it. The surface of the P electrode on the notch 311. The notch 311, along with the bonding pad 32, is preferably located at the farthest position from the n electrode 14 disposed on the n-type semiconductor layer 12. (This one conforms to the paper size of the drawing.圉 National Standard (CNS) A4 Specification (210X297mm) Packing ............ 玎 ............ .......... line {Please read the precautions on the back before filling in this page} Printed by 夬 棂 工 Λ 工 工 消费 工 合作社 社 403403 A6 B6 V. Device Description (13) 1). Therefore, the additional current throughout the type 11 semiconductor layer 13 'can obtain uniform light emission from the device. For example, on the diagonal of a planar square wafer, the notch (window) 311 is a corner on the light-transmitting P electrode 15, and the n-electrode I4 is formed on the corner on the n-type semiconductor layer I2. It is also possible for the P-type semiconductor layer I3 to reach a contact ohm, and the contact ohmic with the P-type semiconductor layer I3 is achieved by the P electrode 15, so if an electrical connection can be obtained with the P electrode I5 to achieve non-contact Ohm is preferable, but the bonding pad 32 is formed of a conductive metal material connected to the P-type semiconductor layer 13 which is stronger than the P electrode 15. The bonding pad 32 is due to a stronger p-type semiconductor layer than the P electrode 15 I3 is connected, so when the wire is bonded, pulling it to a bonding wire such as a gold wire can prevent peeling of the bonding pad 32 and / or the ρ electrode 15. Examples of such a metal material for the bonding pad include aluminum alone, or Contains chromium, aluminum, and gold A metal material of at least two kinds of metals. When the metal material forming the bonding pad 32 contains more than two kinds of metals, 'as explained in the above, these metals are pre-alloyed, or the metal layers are sequentially laminated' as a mouth It can be alloyed at the same time when the electrode 15 is smelted. Although these metal materials cannot achieve good contact ohms with the? -Type semiconductor layer 13, they are strongly connected to the P-type semiconductor layer 13 and will not fall off when the wires are bonded. It can be made into a thin film to show translucency. Such a thin-film adhesive pad does not consciously reduce the light emission of the device because it transmits light emitted from the device. In addition, the adhesive layer is made of a multi-layer structure, a layer that is in direct contact with the p-type electrode 15 and a material that is more strongly connected to the p-type semiconductor layer, and a metal with a better connection between the uppermost layer and the wire adhesive material. To form. * * * * Experimental Example 5 * * * * On a P-type GaN layer, the total thickness of Ni-Au layer vapor deposition is 0.01, that is, > this paper rule ~ ........... One................................................. .............................................. Order .. ......... line (please read the precautions on the back before filling out this page) 403945 A6 B6 Printed by the Central Labor Bureau of the Ministry of Economic Affairs Explanation of the invention (14) 1000 light-transmitting adhesive pads are formed. On the other hand, Cr-Al, A1-AU, Cr-Au, and A1 alone were separately vapor-deposited to a total thickness of 0.01 μm, each forming 1,000 light-transmitting adhesive pads. After the gold wire is bonded to these bonding pads, the number of peeling of the bonding pad when the gold wire is detached is checked, and the pass rate is measured. The pass rate of the bonding pads made of Ni-Au is 60%, while the pass rates of other bonding pads are all above 9S%. Furthermore, since the adhesive pad is formed by thickening it, the bonding force with the p-type semiconductor layer 13 can be increased due to its large thickness. Although a thick adhesive pad cannot express light permeability, if it is formed of the same material as the P electrode, the contact ohm can be achieved. Fig. 5 shows the cutout 312 in which the corner portion of the translucent p-electrode 15 is to be cut away. The same device as that shown in Fig. 4 is shown temporarily. In addition, on FIG. 5, in order to clearly show the notch 312, the adhesive pad is not shown. Fig. 6 shows an insulating and transparent protective film (protective film 411) covering a thin, translucent P electrode 1S, and shows the same device as the light emitting device shown in Fig. 1. The protective film has transparency that allows more than 90% of light to be transmitted. In addition, since the protective film is insulating, the metal balls formed on the η electrode 14 and remaining on the bottom when the wires are bonded can prevent an electrical short circuit between the two even if they are in contact with the ρ electrode 15. In addition, the protective film is transparent and can transmit light emitted from the device that passes through the ρ electrode without reducing the quantum efficiency (light extraction efficiency) outside the device. Furthermore, the protective film prevents the thin p-electrode 15 from being damaged, and also prevents the wire from being pulled off when the bonding pad I7 'or the p-electrode is wire-bonded. As long as the material forming the protective film is transparent and insulating, it is desirable to include silicon oxide, titanium oxide, aluminum oxide, and silicon nitride, although there is no particular limitation. These materials are colorless and transparent regardless of the thickness of the film and are insulating. Therefore, 'the protective film formed by these materials transmits almost no light through the ρ electrode {please read the precautions on the back before filling in this page} binding. Binding .. thread. ) T4 specification (21 × 297 mm > 403945 Printed by Shellfish Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs, 5. Description of invention (15) will cause it to decay. The protective film can use ordinary evaporation, or sputtering technology Although the thickness of the protective film is not particularly limited, it is usually from 0.03 to 11 'to 10; 11'. In addition, particularly in the field between the η electrode I4 and the bonding pad 17, when the bonding is performed online, The metal ball formed by the bonding wire makes the 11 electrode 14 and the? Electrode 15 easily cross-linked. Therefore, in FIG. 6, the protective film 411 covers such a field in a comprehensive manner. In FIG. 7, the protective film (protection (Film 412) The entire exposed surface of the P electrode 15 and the exposed end surface of the p-type semiconductor layer 13 and the exposed surface of the n-type semiconductor layer are covered, and the structure is the same as that of FIG. 6. Therefore, the light emission of FIG. The reliability of the device is improved more than the device of FIG. 6. 8, a continuous protective film (protective film, the adhesive part with the bonding line of the η electrode 14 and the adhesive part with the adhesive pad I7 is subtracted, and almost the entire wafer is covered, showing the same structure as in Figure 6. A protective film is also formed on the surface of the adhesive pad 17, and the adhesive pad I7 becomes further pressed by the protective film, which can prevent the adhesive pad 17 from detaching from the P electrode 15. Moreover, because the protective film is also formed on the η electrode 14, It can also prevent the η electrode I · 4 from detaching from the η-type semiconductor layer 12. For this reason, it can provide a device with excellent reliability. Figure 9, except that the η electrode 14 and the bonding pad I7 are on the diagonal of a flat square wafer It shows the same structure as in Fig. 8 except for the corner portions that face each other. Because of this electrode arrangement, the same advantages as described in Fig. 3 can be obtained. Next, the n-electrode aspect of the present invention will be described. Η of the present invention The electrode is a metal material including titanium and aluminum and / or gold, for example, a material including titanium and aluminum, a material including titanium and gold, or a material including titanium and gold and aluminum. These metals are pre-alloyed, All metal layers can be laminated. The η electrode formed with these metal materials can be smelted {please read the precautions on the back before filling this page). Binding · 'Line. Specimen (CHS) T4 specification (210 X 297 mm) Printed by the Ministry of Economic Affairs, Central Sample and Specimen Bureau Shellfish Consumer Cooperative, printed 403945 5. After the description of the invention (16), it reached the η-type GaN M-V Good contact ohmic of the group compound semiconductor layer. The above-mentioned smelting temperature is particularly desirable at 400t: above. Smelting is ideally performed at 0.01 to 30 minutes. Generally, nitriding The gallium-based Π-V group compound semiconductor has the property of forming an n-type because it forms a nitrogen lattice void in the crystal even if it is not doped with impurities. In the growth of compound semiconductors, doped η-type impurities such as silicon, germanium, culvert, and sulfur appear to become more ideal η-conductive types. In addition, the 'nitridation-based compound-V compound semiconductor is a vapor phase growth method using an organic metal vapor phase growth method (MOCVD or MOVPE), a Mg vapor phase growth method (HDCVD), and a molecular wire crystal orientation (MBE). For general growth. In such a gas phase growth method, for example, trimethylgallium is used as a gallium source, ammonia is used as a nitrogen source, or a compound containing a hydrogen atom is used, and a gas such as hydrogen is used as a carrier gas. These gases containing hydrogen atoms are thermally decomposed during the growth of a gallium nitride-based Group I-V compound semiconductor to dissociate the hydrogen, and the hydrogen is sucked into the grown semiconductor to form a lattice cavity with nitrogen or an n-type impurity. Combination, while hindering their role as donors. If the η electrode material or the ρ electrode material is smelted at a temperature of 400 »0 or more, the trapped gas in the semiconductor crystal is driven out, so that the η-type impurity or the P-type impurity in the crystal is activated, and the The increase in the concentration of the electron carrier, or the effectiveness of the overall carrier concentration, can be regarded as achieving ohmic contact with the electrode. The effect of this smelting is the same as the effect of the p-type impurity doped gallium nitride-based I-V compound semiconductor described in Japanese Patent Application Laid-Open No. 5-183189. In this bulletin, the p-type impurity doped nitrided m-V group compound semiconductor starts from a smelting temperature of 400 ° C, gradually decreases the resistivity, and smelts above 700 ° C. The temperature is displayed-the paper size is fixed to the national standard (CNS) A4 specification (210x297 mm) ...........; ............. ........................................ ........................... TΓ .................. ...... Wire {Please read the precautions on the back before filling in this page} Α6 Β6 403945 5. The resistivity of the invention description (17). In the n-type gasification system of the present invention-Group V compound semiconductor, although the resistivity was gradually reduced starting from smelting at 400 ° C, a sharp decrease in resistivity was not seen at 600. (:: The smelting 'becomes approximately 1/2 of the initial resistivity, and even if smelting exceeds this temperature, the resistivity will not be lowered. The smelting temperature of the η electrode is ideally 500 ° C or more. Above C, it is more ideal. In the case where the η electrode material contains an inscription, 'the smelting temperature is sufficient, the ideal temperature is 45 ° C or higher, and more preferably 500 ° C or higher. The upper limit of the smelting temperature' The same as the upper limit of the smelting temperature of the P electrode is the temperature at which the gallium nitride-based Group I-V compound semiconductor does not decompose. Although the total thickness of the η electrode is not particularly limited, it is usually 50 angstroms or more, and ideally ο.οίμπ »to 5jam 0 The n-electrode material of the present invention containing titanium and aluminum and / or gold is preferably a laminated structure of each metal layer. At this time, the titanium layer is directly contacted with an n-type gallium nitride system. Π -V compound semiconductor layer is ideal. Titanium can achieve better contact ohms with η-type gallium nitride based II -V compound semiconductor. At this time, the titanium layer is formed by 20A or even 0.3μm. The thickness is ideal. And the total thickness of the aluminum or gold layer is thicker than that of the titanium layer. Therefore, during smelting, a decrease in the bonding strength of the η electrode or the ball during wire bonding after the migration of the titanium surface is prevented. The η electrode of the present invention containing titanium and gold, or titanium and gold and aluminum, is prevented. The material has better oxidation resistance than the η electrode material composed of titanium and aluminum, and has a stronger connection with the gold balls formed when the wires are bonded. Moreover, the η electrode material of the present invention containing gold has a gold layer The laminated structure is ideal. Because the gold layer can of course be very strongly connected to the gold ball. Figure 10 shows temporally the size of the light-emitting paper with the double-shaped structure of the η electrode of the present invention, which uses the ten national standards ( CNS) A4 size (210x297 mm) .............. .......................................... ...... Order ............ line (please read the notes on the back before filling This page> Printed by the Ministry of Economic Affairs and the Central Bureau of Commerce, printed by the Consumers Cooperative 403945 A6 B6 Printed by the Central Bureau of Commerce of the Ministry of Economic Affairs, the Shelled Consumer Cooperatives. 5. Description of the Invention (18) This device is, for example, composed of sapphire On the substrate 11, for example, a buffer layer (not shown) formed between undoped GaN and a thickness of 0.002 to 0.5 μm, and the n-type gallium nitride-based Π-V group compound semiconductor layer 51 is formed, for example, ΐμχη to The thickness of um. On the n-type semiconductor layer 51, a n-type gallium nitride-based H-V group compound semiconductor, for example, a first cover layer 52 made of n-type GaAIN doped with an n-type impurity such as silicon is formed. The cover layer 52 is usually 0.01 to 5 μm, and preferably has a thickness of 0.1 to 4 μm. On the first cover layer 52, an active layer (light-emitting layer) 53 composed of a gallium nitride-based Π-V group compound semiconductor having a semiconductor different from that of the cover layer 52 is formed. This active layer 53 is an n-type or p-type impurity, and is preferably a low resistivity InaGa N (0 < a < l) formed preferably α 1 -α. The active layer 53 is 10 angstroms to 0.5 > ixn, and preferably has a thickness of 0.01 to 0.2 pm. 0 On the active layer 53, a p-type gallium nitride-based M-V group compound composed of a semiconductor different from the active layer 53 is formed. A second cover layer 54 made of GaAIN doped with a p-type impurity such as magnesium. The second cover layer 54 is usually 0.001 mm or more, and desirably has a thickness of 0.1 to 1 jirn. On the second cover layer 54, a contact layer 55 composed of a p-type gallium nitride-based U-V group compound semiconductor such as P-type GaN is formed, and a p-electrode 56 is formed thereon. The P electrode 56 may be formed of any suitable conductive metal material. As a P electrode material exhibiting good ohmic characteristics, a metal material containing nickel and gold can be given. Although nickel and gold may be alloyed in advance, a laminated structure of each metal layer (in this case, it is desirable to directly contact the nickel layer and the contact layer 55) is particularly desirable. Of course, the light-transmitting ohmic P electrode 15 of the present invention in each of the above cases, and this paper size is applicable to the standard of CNS A 4 (210X297 mm) {Please read the precautions on the back before filling Copybook >. Binding--thread. 403945 A6 B6 Printed by the Central Laboratories Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives. 5. Description of the invention (19) The adhesive pad 32 can be applied to the device of FIG. 10. 56 P electrodes are connected to the bonding wire 60 through the metal balls 59. The wafer is partially etched away from the contact layer 55 in its depth direction 'and reaches the surface of the 0-type semiconductor layer 51, so that the n-type semiconductor layer is partially exposed. On the exposed surface of this n-type semiconductor layer S1, an n-electrode 5? Of the present invention is formed. The n electrode 57 is connected to the bonding wire through a metal ball. **** Experimental example 6 **** On a sapphire substrate having a diameter of 2 inches, a thickly doped η-type GaN layer was formed, and 1,000 η electrode materials were each vapor-deposited on the surface with a size of 100 μm. Smelt at 450 ° C. The current-voltage characteristics between electrodes made of the same material were measured. The results are shown as lines A to D in FIGS. 11A to 11D. FIG. 11A is an electrode obtained by sequentially stacking titanium and aluminum at a thickness ratio of 0.01: 1, and FIG. 11B is an electrode formed by using a 6-doped alloy containing 1% by weight of titanium. FIG. 11C is a separate electrode. An electrode made of titanium, and FIG. 11D is an electrode made of aluminum alone. Although these figures each represent a representative current-voltage characteristic, the electrodes made of titanium and titanium show good contact ohms with the n-type GaN layer as shown in Figs. 11A and 11B. The 1000 electrodes are all shown in the ohmic characteristics shown in Figs. 11A and 11B. On the other hand, electrodes made of titanium alone or aluminum alone are shown in Figures 11C and 11D, respectively. None of them show good contact ohms. Among the 100 electrodes, The ohmic characteristics of FIG. 11A and UB are just a few. Furthermore, when the surface of the electrode after smelting is observed with a microscope, an electrode made of titanium alone or aluminum alone has more than 90% of its surface dysprosium black. **** Experimental example 7 **** (Please read the precautions on the back before filling in this page> Binding, binding, thread paper size, national standard (CNS) T4 specification (210x297 mm) ) A6 B6 403945 V. Description of the invention (20) On the sapphire substrate with a diameter of 2 inches, a η-type Ga9AlO / layer of doped silicon with a thickness of 0.1 Sum is formed. On the surface, a size of 100 Mm is formed. Η electrode material of the laminated structure of titanium and aluminum, the thickness ratio of the titanium layer and the aluminum layer was changed to 10,000 for each steam ore, and smelted at 45 ° C. The current of an electrode composed of the same material was measured- Voltage characteristics. The results are shown by the lines A to D in the graphs UA to 12D. In FIGS. 12A to 12D, the thickness ratio between titanium and aluminum is 0.001: 1, and the thickness ratio between aluminum and titanium is 0.001: 1, and titanium and An electrode in which aluminum has a thickness ratio of 1: 0.001 and aluminum and titanium have a thickness ratio of 1: 0.001. These figures clearly show an electrode composed of titanium and aluminum, regardless of the content ratio of titanium to inscription. All have good ohmic characteristics. In addition, the Ti-Al electrodes that make the titanium layer directly contact the n-type semiconductor layer are all shown in Figures 12A and 12C. The good ohmic characteristics of Al-Ti electrodes that directly contact aluminum with the n-type semiconductor layer do not show the ideal ohmic characteristics. Moreover, none of the electrodes has deteriorated. **** Experimental Example 8 **** On the silicon-doped η-type GaAIN layer, 0.03juin thick titanium is vapor-deposited first, and 0.5; am thick aluminum is vapor-deposited thereon, and finally 0.5 jam thick gold is vapor-deposited, and then the laminated structure is deposited at various temperatures. Smelt for 5 minutes. Measure the current and voltage characteristics of the obtained electrodes. The results are shown in Figures 13A to 13D with lines A to D. Figure 1: 3A is the case where the smelting temperature is 300 ° C. When the smelting temperature is 400 ° C, Figure 1: 3C is the case where the smelting temperature is 500 ° C, and then Figure 13D is the case where the smelting temperature is 600 ° C. From these figures, it can be seen that the smelting temperature is 30CTC. The electrode has no ohmic characteristics with the! 1 type semiconductor layer (Fig. 1SA), and the smelting temperature is 400. (: Above, good ohmic characteristics are exhibited (Fig. 1; 3B ~ ISD). In addition, titanium and N electrode formed by alloy of aluminum and gold. This paper is suitable for China National Standards (CNS) A4 (210x297). (Mm) ............................... ............................................ .................... line one, please read "French Legal and Italian Matters on the Back 4 Write this page) Central Ministry of Economic Affairs Printed by the Shellfish Consumer Cooperative, printed by the Central Government of the Ministry of Economic Affairs, printed by the Shellfish Consumer Cooperative, 403945-V. Description of Invention (21) The same result can be obtained. **** Experimental Example 9 **** Except that on the silicon-doped η-type GaN layer, titanium was deposited in a thickness of 0.33 in. And gold was deposited in a thickness of 0.5 mm. Experimental Example 8 The same experiment. The results are shown in FIGS. 14A to 14D by lines A to D. Fig. 14A is the case of smelting temperature of 300 ° C, Fig. 14B is the case of smelting temperature of 400 ° C, Fig. 14C is the case of smelting temperature of 500 ° C, and finally Fig. 14D is the case of smelting temperature at 600 ° C . From these figures, it can be seen that when the smelting temperature is 300 ° C, the good ohmic characteristics between the electrode and the η-type semiconductor are not shown (Figure 14A), and the ideal ohmic characteristics are shown above 400 ° C (Figure 14B ~ 14D). . In addition, the same results were obtained for an η electrode composed of an alloy of titanium and gold. Comparing Figs. 13A to 13D with Figs. 14A to 14D, if aluminum is added to an electrode material containing titanium and gold, an η electrode showing ideal ohmic persistence can also be obtained at a lower smelting temperature. Desirable ohmic characteristics can be obtained at a lower temperature, and decomposition of the gallium nitride-based Group I-V compound semiconductor due to heat can be suppressed, and it is particularly desirable to maintain its crystallinity. **** Experimental Example In order to investigate the connection strength between the η electrode and the gold ball, the following experiment was performed. Referring to FIG. 15, on a silicon-doped n-type GaN layer 61, a thin film formed of A1, or a multilayer film formed of Ti-Al, Ti-Au, Ti-Au-Al, or Ti-Al-Au ( Each multilayer film is laminated in this order from the left), 1000 pieces each having a diameter of 120 mm are formed, and smelted at 500 ° C. to form an η electrode 62. Each? Electrode was then left in the air for one day for surface oxidation. Gold wires 64 are then bonded to each of the n electrodes 62 by ball bonding. Gold balls 63 having a diameter of 100 μm were formed. After that, the front side of the ball began to dig the ball 63 with the knife 65, the horizontal direction, the ball 63 fell off, or the paper size used in China B National Chess Standard (CNS) 肀 4 specifications (210X297 male *) .... ........................................ ............................................... .... Order .............. line (please read the precautions on the back before filling in the book > Central Standards Bureau of the Ministry of Economy Printed by the cooperative 403945 Α6 _ Β6 V. Description of the invention (22) It does not fall off and is destroyed. A heavy object is hung on the knife 65, and the scab is shown in Table 2. In Table 2, the number under each weight indicates that the ball passes from the electrode The number of falling off, those who are damaged without falling off the ball are recorded as " damage ". Table 2 20 g 30 g 4 0 g 50 g 60 g 70 g A1 95 5----Ti-Al 93 Ί — ---Ti-Au-Al 0 0 6 25 69 Ti-Al-Au 0 0 0 1 5 Damage Ti-Au 0 0 0 0 1 The damage is shown in Table 2 and consists of titanium and gold, or titanium, aluminum and gold The formed η electrode has better oxidation resistance than the η electrode made of titanium and aluminum, and therefore exhibits a stronger bonding force with gold balls. In addition, if it is made of titanium The η electrode composed of aluminum and gold has a stronger bonding force than the aluminum placed on the uppermost layer. It has better ohmic characteristics. The η electrode material composed of titanium and aluminum In order to prevent the reduction of the bonding force with the metal ball caused by oxidation, it is also desirable to laminate a high melting point metal material layer having a higher melting point than aluminum on its surface. Among the high melting point metal materials, gold is included. , Titanium, nickel, platinum, tungsten, molybdenum, chromium, and / or copper. The ideal is gold, titanium, and / or nickel. These materials are very tight with the first metal material layer formed by titanium and aluminum. Good, will not be detached from the first material layer, and the gold paper size A formed when bonding with the thread is t mesh B family standard (CNS) f 4 specifications (210X297 public love) ..... ........................................ ............................................................. ... Order ........... line {Please read the notes on the back before filling in this page) A6 B6 403945 V. Description of the invention (23) The connection of the sphere is also very good. Among them, the second high melting point material is preferably a gold-containing material. Particularly preferred are materials containing gold and refractory metals other than gold (ideally titanium and / or nickel). These high-melting-point materials may be alloyed in advance, but those having a laminated structure of each metal layer are preferred. In this case, it is desirable to use gold as the uppermost layer, as described above. After forming such a laminated film, it was smelted under the above conditions to obtain an η electrode. The second high-melting-point metal is aluminum contained in the underlying metal material, and prevents migration to the surface of the η electrode, thereby preventing oxidation of the crystal. FIG. I6 shows the η electrode 57 having such a laminated structure. In FIG. 16, the η electrode 57 is a first thin film 57a formed of a laminated structure of titanium and aluminum, and a second thin film 57b formed of a high melting point metal material such as a laminated structure formed thereon, both Composition. **** Experimental Example 11 **** On a silicon-doped η-type GaN layer, 0.03jum-thick titanium was vapor-deposited thereon to a thickness of 0.15 μm, and a first thin film was formed. The same experiment as Experimental Example 8 was performed except that 0.03 Mm-thick titanium, 0.03 Jm-thick nickel, and O.SjLim-thick gold were deposited in this order. The results are shown as lines A to D in Figs. 17A to 17D. Fig. 17A is the case of smelting temperature of 300 ° C, Fig. 1.7B is the case of smelting temperature of 40CTC 'Fig. 17C is the case of smelting temperature of 50,000, and finally Fig. 17D is the case of smelting temperature of 600t: . From these figures, it can be seen that when the smelting temperature is 300 ° C, good ohmic characteristics do not appear between the electrode and the η-type semiconductor (Figure 17A), and when the smelting temperature is above 400 ° C, ideal ohmic characteristics are shown (Figure 17B ~ 17〇). Moreover, it was also found that smelting at 600 ° C did not deteriorate the ohmic characteristics. **** Experimental Example 12 **** In order to investigate the connection strength between the η electrode and the gold ball, use the following paper in Table 3. The paper size is suitable for the standard of Chinese family standard (CNS) f 4 (210x297 mm) .. .........; ............................. ........................................... Order ... ......... line (please fill in the notes on the back of M Jing before filling out this page) Printed by S Industry Consumer Cooperative of Central Bureau of Standards, Ministry of Economic Affairs 403945 A6 B6 The invention of the electrode material listed in (24) was subjected to the same experiment as in Experimental Example 10. The results are shown in Table 3. Table 3 20 grams 30 grams 40 grams 50 grams 60 grams 70 grams Ti-Al 93 7--One Ti-Al-Au 0 0 0 1 5 Damage Ti-Al-Ti-Au 0 0 0 0 0 Damage Ti-Al -Ni-Au 0 0 0 0 0 Destroy Ti-Al-Ti-Ni- • Au 0 0 0 0 0 Destroyed by the Central Bureau of Standards of the Ministry of Economic Affairs, Printed by the Bayer Consumer Cooperative, it can be seen from Table 3 that high melting point metal materials make titanium A metal material made of aluminum and aluminum improves oxidation resistance and improves the connection with the ball. In addition, the η electrode of the present invention described above is applicable to the η electrode 14 of the device of FIGS. 1 and 3 to 9, which naturally improves the characteristics of this device. Examples of the present invention will be described below. ===== 实施 例 1 ==== On a sapphire substrate, a buffer layer (thickness: 0.02Win) made of undoped GaN and a silicon-doped η-type GaN layer (thickness: 4Λ1ΙΠ) And a magnesium-doped p-type GaN layer (having a thickness of ijam), a wafer having a diameter of 2 inches laminated in this order is prepared, and then a p-type GaN layer is desired to expose the η electrode forming portion of the η-type GaN layer It is removed by etching. Next, after partially covering the exposed n-type GaN layer, the p-type GaN layer was completely vapor-deposited with a thickness of 0,03jura and a thickness of 0.07juin of gold, and then tas was used for this paper. Where) τ 4 secret m〇297297; aT) .......... \ .................... ..................... ^ .. .....................- ΪΓ .............. line: {Please first M (Please read the notes on the back and fill in this page) 403945 A6 B6 Printed by the Central Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, V. Description of Invention (25) The vapor-deposited film is deposited on the exposed surface of the n-type GaN layer. aluminum. Then, the obtained wafer was subjected to smelting at 50 ° C. for 10 minutes. The thickness of the P electrode after smelting was 0.07 JLHII, which showed light transmittance. This wafer was cut out of a 305-square-meter cube, and a cube was placed in a cap-shaped lead frame as shown in Fig. 1 and a predetermined wire was bonded to produce a light-emitting diode. The light-emitting output of this diode is 20 rnA and 80 UW, and the forward voltage is 4 V. Furthermore, the number of crystal cubes cut from a 2-inch wafer is about 16,000. The light-emitting diodes obtained from these crystal cubes are removed from contact The qualified rate after defective products is above 95%. Therefore, when using the wafer obtained in Example 1 to arrange the crystal cube directly with the P electrode and the η electrode in direct contact with the lead frame (with the sapphire substrate on top) as in the original case, the crystal cube specifications also need to be minimal. lrnn horn. To make this lmm-angle crystal cube span two lead frames, install the necessary electrode connections to make a diode. The light-emitting output of this light-emitting diode at 40 ° is 40uw. It is known that the lateral light emission cannot be fully extracted. In addition, the number of crystal cubes cut from a 2-inch wafer does not exceed 2000, and the pass rate of the diodes obtained from these crystal cubes after removing the defective products is only 60%. In this way, according to the present invention, the electrode of the P-type semiconductor layer is made of a metal capable of achieving ohmic contact and is translucent, and can provide light emission that allows light emission from a gallium nitride compound semiconductor. The device 'therefore confirms that the external quantum efficiency (light extraction efficiency) of the light emitting device is not reduced, and light emission can be efficiently extracted. Furthermore, according to the present invention, the size of the single crystal cube can be reduced, and the productivity can be further improved, and it can be confirmed that an improvement in the yield rate and a reduction in the production cost can be achieved. } Paper scales around the taa mound, quasi (CNS) f4 «^ _X297 male dragon) ~ t Please read" Notes on the back before filling out this page). Binding ... Thread. A6 B6 403945 V. Description of the invention (26 ) ===== Example 2 ==== Except for smelting at 600 ° F, the procedure of Example 1 was performed. The obtained P-type electrode had almost the same thickness as in Example 1 and exhibited the same light transmittance. Furthermore, the produced light-emitting diode exhibited almost the same light-emitting output and forward voltage as in Example 1, and the pass rate was also approximately the same. ===== Embodiment 3 ==== On the p-type GaN layer, the path of O.Sjum, 0.5; um thick 錬 other than ’is deposited. The obtained P-type electrode had a thickness of 0 · 7 #, and exhibited such light transmittance. In addition, the produced light-emitting diode exhibited a light-emitting output substantially the same as that of Example 1, a forward voltage, and the pass rate was also approximately the same. ===== Embodiment 4 ==== On the p-type GaN layer, the order of Example 1 was performed in addition to 0.1 Wwm thick platinum and 0.1 MΠ »thick titanium. The obtained P-type electrode had a thickness of 0.07, and the temporal transparency was the same. In addition, the light-emitting diode produced had approximately the same light-emitting output as that of Example 1, and had a forward voltage, and the pass rate was also substantially the same. ===== Example 5 ==== On a sapphire substrate with a diameter of 2 inches, a GaN buffer layer, a silicon-doped n-type GaN layer, a silicon-doped GaAIN cover layer, and a zinc-doped silicon layer InGaN active layer, Mg-doped GaAlN capping layer, and M-doped p-type GaN contact layer were fabricated into a wafer with a double-shaped structure. Next, the 1-crystal square has a structure as shown in FIG. 10, and etching is performed to locally expose the n-type GaN layer. Using a predetermined photomask, 100 λ of titanium was vapor-deposited on each of the exposed n-type GaN layers, and 0.5 Mm thick gold was formed thereon to form a multilayer film having a diameter of 100 μm. This paper uses the national standard (CNS) T4 specification (210X297) * .................... ........................................ ................................................................................. Please read the notes on the back before filling in this page. 1 Printed by the Central Laboratories of the Ministry of Economic Affairs, printed by the Cooperative Consumer Cooperative 403945 Printed by the Central Laboratories of the Ministry of Economic Affairs, Consumers Cooperative Cooperative. 5. Description of the invention (27) The obtained wafer was smelted under a radon blanket at 600 ° C. for 5 minutes, and the multilayer film was used as an η electrode. When the wafer prober measures the current-voltage characteristics between the n electrodes, the ohmic characteristics shown in Fig. 12D are temporally shown. Next, a p-electrode was formed on the P-type contact layer by a conventional method, and then the wafer was cut into a crystal cube. In this way, 15,000 crystal cubes were obtained from a 2-inch wafer. The crystal cubes are bonded and arranged on a lead frame, and a gold wire is connected to the P and η electrodes by a ball coupler. Of the isooo cubes, in the ball coupler, there was no detachment from the ball and the η electrode. Moreover, after bonding, 20 crystal cubes were randomly drawn out, and the respective gold wires were pulled, and all the gold wires were broken before the ball fell off the η electrode. ===== Example 6 ==== η Electrode material 'Same as Example 5 except that the spinning of 100 λ was carried out, the thickness of which was 0.4 μm, and 15,000 light-emitting crystals were obtained. square. The specific measurement of the current-electricity of all the η electrodes by the wafer prober is as shown in FIG. 11A. Moreover, among the 1S000 crystal cubes, no detachment from the ball and the η electrode occurred during the ball bonding. Furthermore, after bonding, 20 crystal cubes were randomly drawn out, each of which was pulled with gold wires, all of which broke the gold wires before the ball fell off the η electrode. ===== Example 7 ==== η electrode material, except that 0.5-jim-thick Ti-Al alloy containing 1% titanium I * was deposited in the same manner as in Example 5 to obtain 15,000 light-emitting crystal cubes. The current-voltage characteristics of all the η electrodes were measured by a wafer prober, and the characteristics are shown in Fig. 11B. Furthermore, among the 15,000 crystal cubes, no one fell off from the ball and the η electrode during the ball bonding. Furthermore, after bonding, 20 core pieces were randomly drawn out, each of which was pulled with gold wires, and all of them were broken before the ball fell off the η electrode. ===== Embodiment 8 ==== The light emitting crystal of Example 5 is placed at the P electrode and the η electrode with 2 lead frames ........ ........................................ ................................................... 玎............. line (please read the precautions on the back before filling in this page) This paper uses the Chinese National Standard (CNS) A4 specification (210X297 mm) 403945 A6 B6 Printed by the Central Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. 5. Description of the invention (28). At this time, the P electrode and the η electrode are connected by a rhenium adhesive. When the lead frame connected to the η electrode is pulled after the connection, light is emitted on the different surface of the indium and the lead frame. In this embodiment, the n-electrode of the present invention is directly and strongly connected to the lead frame using a general adhesive such as solder, rhenium, and gold alloy. ===== 实施 例 9 ==== η electrode material, titanium is deposited ΙΟΟΑ thickness of titanium, which is ο.ίμιη thick aluminum, to form a first thin film, and then a second thin film thereon, forming 0. With the exception of titanium having a thickness of 0.1 μm and nickel having a thickness of 0.1 μm, as in Example 5, 15,000 light-emitting crystal cubes were obtained. The current-voltage characteristics of all the η electrodes measured by the wafer prober are the characteristics shown in FIGS. 1I to 3D. In addition, among the 5,000 crystal cubes, there was no detachment from the ball and the η electrode during the ball bonding. Moreover, after bonding, 20 crystal cubes were randomly drawn out, and the gold wires were pulled individually, and all the balls were broken before the wires detached from the electrode. ===== 实施 例 10 ==== η electrode material The second thin film was deposited with a thickness of 0.1 μm and a thickness of gold of 0.4 μm, and 15000 light-emitting cubes were obtained in the same manner as in Example 9. The current of all η electrodes was measured by a wafer detector. -The electrical characteristics are as shown in FIG. 14D. In addition, among the 1S000 crystal cubes, there is no detachment from the ball and the η electrode during the ball bonding. Moreover, after bonding, 20 crystal cubes are randomly extracted. Each one pulls the gold wire, and all the balls break the gold wire before falling off the electrode. ==== Example 11 ==== The second thin film of η electrode material, except that titanium was deposited to a thickness of 0.1 μm, chromium, and gold to a thickness of 0.4 μm were obtained in the same manner as in Example 9 to obtain { Please read the precautions on the back before filling in this page). Binding-bookbinding .. Thread paper size: Ten 鼸 National Standard (CNS) 曱 4 specifications (210x297 public love) A6 B6 403Θ45 5. Description of the invention (29) 15,000 luminous crystal cubes. The current-electricity characteristics of all the η electrodes were measured using a wafer prober, and the characteristics shown in Fig. 13C or Fig. 1: 3D were given. In addition, among the 15,000 crystal cubes, there was no detachment from the ball and the η electrode during the ball bonding. Further, after bonding, 20 crystal cubes were randomly drawn out, and all the balls of each of the gold wires' were pulled, and the gold wires were broken before they were separated from the η electrode. ===== Example 12 ==== The light-emitting crystal of Example 9 is connected to two lead frames at the position of the P electrode and the η electrode '. At this time, the P electrode and the η electrode are connected to each other through a fluorene adhesive. When the lead frame connected to the η electrode is pulled after the connection, the interface between 絪 and the wrong frame will fall off. Although the present invention has been described above with reference to specific cases, the present invention should not be limited to these. Each condition can be applied to other situations where appropriate. In addition, according to the present invention, a gallium nitride-based M-V compound semiconductor light-emitting device with a P-η homojunction or a P-η double heterojunction can also be applied to a GaN single heterojunction gallium nitride M- Group V compound semiconductor light emitting device. Furthermore, the present invention is applicable not only to light-emitting diodes, but also to other light-emitting devices such as light-emitting laser diodes, and further to light-receiving devices such as solar cells and photodiodes having sensitivity to a wavelength of 600 rm or less. Furthermore, the present invention mainly provides an electrode material having good ohmic contact to a gallium nitride-V group compound semiconductor. Therefore, the present invention can also be applied to a substrate having a P-type gallium nitride-based II-V compound semiconductor layer and / The substrate of any semiconductor device of the n-type gallium nitride-based M-V compound semiconductor layer is not limited to an insulating substrate such as sapphire. Semiconductors such as silicon carbide, silicon, zinc oxide, arsenide, and gallium phosphide can be used. Substrate. This paper size is in accordance with China National Standards (CNS) 肀 4 specifications (210X297 male *) ............... ........................................ .............. Order ......... line (please first Note on the back of Min Du, please fill in this page again> Printed Chinese Manual of Patent Application No. 83103775, Revised Page of the Patent Application No. 83103775 by the Central Bureau of Standards of the Ministry of Economic Affairs (March 90)

(4-0 ^ V. Description of the invention (i **** Background of the invention ****) The present invention relates to a gallium nitride-based ffl_v group compound semiconductor device having an ohmic electrode and a method for manufacturing the same. **** Related Explanation of technology **** In recent years, gallium nitride (GaM), aluminum gallium nitride (GaA1N), gallium nitride (InGaN), ytterbium nitride aluminum (InAlGaN), and other gallium nitride-based I- Group V compound semiconductor and material light-emitting devices have attracted attention. This light-emitting device usually has an n-type gallium nitride-based compound semiconductor layer on the substrate, and a gallium nitride-based dopant dopant] j -Laminated structure of -v compound semiconductor eyebrows 0 Previously, gallium nitride-based m-V group compound semiconductor layers doped with p-type impurities were still high-resistance i-types, so the past devices were so-called MIS-type structures Recently, the technology of converting high-resistance i-type / 1 to low-resistance p-type eyebrows, as disclosed in No. 2_257679, No. 3_218325, and No. 5_183189, seems to be able to achieve p_n junction type GaN-based I-V compound semiconductor light-emitting device. However, if this is a pn junction type nitride H If a compound semiconductor is to be realized, the various problems of electrodes formed on the p-type layer and / or the η-type layer are well understood. '' In current P-η junction type gallium nitride, II-V group compound semiconductors The light-emitting device is limited by its manufacturing. Among the compound semiconductor layers, there is a P-type compound semiconductor layer at the top. In addition, a transparent sapphire substrate is generally used as the substrate of the device. The semiconductor substrates like gallium arsenide and aluminum gallium phosphide are different on other semiconductor light-emitting devices. Because blue sapphire is insulating, the device cannot use

I

(Make-up "« Notes on the back side * Matters and then fill in this page J. Binding. ¾ Ministry of Economic Affairs »Zhunji only eliminates f cooperative printing ft paper method again 3« quasi (CNS > T 4 Specification (210χ 297 male «is.iJ.bsrsrT / 'osi ^ i ^ o ^ iiipw Patent Application No. 83103775 Patent Application Specification Correction Page (March 90) A6 _ E6 V. Description of Invention (2) In addition to the predetermined flow, it is converted into its g-light function. It is directly installed on the substrate itself. Β P 踅 搔 and n || poles must be directly connected to the individual pS compound semiconducting ig and η-type compounds. The proof layer is formed. The p-electrode ensures that a uniform current is added to the P-type compound semiconductor temple. And in order to find the uniformity of light from the device, the P-type layer is almost completely covered. However, the past Due to the non-transmittance of the P electrode, the light emission of the conventional light-emitting devices, in order to avoid degradation of the external efficiency due to pgig 掻 emission attenuation, cannot be formed on the substrate of the compound semiconductor layer and the n-type compound semiconductive film layer To observe the opposite direction. Therefore, if the conventional compound semi-lead light-emitting device When it is set in a lead frame, because the substrate surface on which the compound semiconducting layer is not formed is facing upwards, ρ mold and η electricity are underneath, it must be carried by the two lead frames. That is, one must be fully saturated. The semiconducting foil is carried on the lead frame. At this time, in order to avoid the electrical short circuit between the P-type compound semiconductor layer and the n-type compound semiconductor layer, it is necessary to ensure a certain interval between the lead frame. The size of an anthracite square of the semiconducting semiconductor also has to be larger than about 1 mm2. Therefore, in the conventional device structure, the number of slices searched by a wafer is bound to be small. In addition, the position of the lead storage frame is very thin, and it is necessary for the delicate drawing and engraving (etching >) technology of the gallium nitride compound. Secondly, although there is no "nS", but As mentioned above, it seems that the Pn-bonded nitrided M-V compound semi-conducting light-emitting device can be realized, which is the most recent example. In terms of light-emitting devices of the past MIS-type structure, due to the use of Ϊ5 poles and 髙Schottky barrier .η3 | 掻 on resistivity i-type layer窸 β The conventional MIS-constructed gallium halide bar H-V group compound semiconducting g emits: U first? ::? Back-RiL: ii-«H. > 4 ^ .KiJ ~ binding table Law 疋 / t Xiaom Ling 3 a 孓 丨 Reading 0 ′s 丨 A4 is now 丨 210 >: .237 Gong > No. 83103775 Patent Application Chinese Specification Revision Page (March 90) A6 B6 Five 2. Description of the invention (10) Aluminum-containing gold or metal-free metal materials may include gold, titanium, nickel, $ 0, and / or platinum-containing materials. The bonding pad made of such a metal material also has good connectivity with the P electrode 13. When it is connected to a gold wire as a lead wire, it also has good connectivity with a ball formed of a gold wire. Furthermore, such a metal material hardly migrates to the p-electrode during smelting or energization of the device for light emission, thereby deteriorating the P-electrode (decreasing light transmittance). Metal materials containing aluminum or chromium, which are transferred to the P electrode for a short period of time (such as 50,000 hours) during power-on, make the material quality. '**** Experimental example 2 **** A sapphire substrate is used as the substrate 11, a η-type GaN eyebrow with a thickness of 4Min is used as the η-type semiconductor eyebrow, and a thickness of a magnesium-doped p-type GaN layer is used as the p-type semiconductor; 1 A bonding pad made of various metal materials is formed on the P electrode I5 of the device shown in FIG. The p-electrode I5 is formed by respectively vapor-depositing a nickel layer and gold / 1 in order. The thickness of Urn is annealed at 600 ° C to alloy those metals and make them transparent, and a thickness of 0.05 mm is obtained. More specifically, an adhesive pad was formed on the P electrode from the adhesive pad material shown in Table 1 below. That is, the bonding pad is formed by directly forming the metal eyebrows shown in the column of Table 1 on the P electrode, and the metal layers shown in the row of Table 1 are vapor-deposited, and are simultaneously processed during the smelting of the p electrode. The bond line is gold. The light-emitting device thus searched was allowed to continuously emit light for 500 hours to examine the effect of the adhesive on the P electrode. The results are described in Table 1. (Please note the notes on the back of Mtf before filling out this page) Binding-binding · Λ Department of Economics t 夬 «Jinju Bureau AX 消 f Included in printed paper ΛΛGeneral China BB Home Standard (CNS) TT4 Specifications & lt 210x297 male «·)

Claims (1)

丨 ~ 厶 ;; r. A8 BS C8 D8 Patent application scope S ^ 93 / 〇S 55 / ¾ Yu Fengyi π π ω _ V recovery section, milk dry guide ® set, horror weapons: substrate with first and second main surface A semiconductor laminated structure including an n-type gallium nitride-based m_ compound semiconductor layer and a p-type gallium nitride-based melon-v group compound + conductor layer is formed on the first main surface of the substrate; A first electrode formed by a type semiconductor layer; and a second electrode formed by being connected to the type semiconductor layer; the second electrode is formed of a metal material including nickel and gold and is in ohmic contact with the P-type semiconductor layer. The second electrode of the light energy emitted by the above device is connected to this (please read the note on the back first and then fill out this page) 2 · If the device in the scope of patent application for item 1 comes from the first main surface of the substrate_ Check. The nickel layer, and the gold layer formed on it 4. As claimed, the patent scope is the first! Item device, thickness of μηι to 1μτη. Qiaokai, U.001. 5 ′: Application scope of patent application] or 3 or 4 items f, the second main surface of the upper 6 board to support the device frame. 6. For the device in the scope of patent application of claim ，, the connection with and contains a bonding pad for bonding with the thread. Electricity 7. If the patent application scope item 6 is a metal material containing gold, or at least gold 'without a name or logo. Constituted by metal above 8. If the device in the scope of patent application is applied for, the device is printed by MC Industrial Consumer Cooperative Co., Ltd., China ’s Ministry of Economic Affairs *. It is composed of nickel, indium and gold and contains at least i: Formed by titanium. Metal materials of a kind of metal 9. Such as the device in the scope of patent application No. 6, formed of the same material. σ, and the second electric device such as the item 6 of the scope of patent application, the recording layer directly connected to the electrode, and the device formed on the second layer such as the device of the second scope of patent application, layer 3 The surface of the body layer has a partially exposed notch-type semiconductor filled with the above-mentioned adhesive pad. The paper used in this notch is made of China National Samples (CNS) (plus 297) and ---------丨 ~ 厶 ;; r. A8 BS C8 D8 Patent application scope S ^ 93 / 〇S 55 / ¾ Yu Fengyi π π ω _ V recovery section, milk dry guide ® set, horror weapons: substrate with first and second main surface A semiconductor laminated structure including an n-type gallium nitride-based m_ compound semiconductor layer and a p-type gallium nitride-based melon-v group compound + conductor layer is formed on the first main surface of the substrate; A first electrode formed by a type semiconductor layer; and a second electrode formed by being connected to the type semiconductor layer; the second electrode is formed of a metal material including nickel and gold and is in ohmic contact with the P-type semiconductor layer. The second electrode of the light energy emitted by the above device is connected to this (please read the note on the back first and then fill out this page) 2 · If the device in the scope of patent application for item 1 comes from the first main surface of the substrate_ Check. The nickel layer, and the gold layer formed on it 4. As claimed, the patent scope is the first! Item device, thickness of μηι to 1μτη. Qiaokai, U.001. 5 ′: Application scope of patent application] or 3 or 4 items f, the second main surface of the upper 6 board to support the device frame. 6. For the device in the scope of patent application of claim ，, the connection with and contains a bonding pad for bonding with the thread. Electricity 7. If the patent application scope item 6 is a metal material containing gold, or at least gold 'without a name or logo. Constituted by metal above 8. If the device in the scope of patent application is applied for, the device is printed by MC Industrial Consumer Cooperative Co., Ltd., China ’s Ministry of Economic Affairs *. It is composed of nickel, indium and gold and contains at least i: Formed by titanium. Metal materials of a kind of metal 9. Such as the device in the scope of patent application No. 6, formed of the same material. σ, and the second electric device such as the item 6 of the scope of patent application, the recording layer directly connected to the electrode, and the device formed on the second layer such as the device of the second scope of patent application, layer 3 The surface of the body layer has a partially exposed notch-type semiconductor filled with the above-mentioned adhesive pad. The paper used in this notch is made of China National Samples (CNS) (plus 297) and --------- No. 83103775 Patent Application Amendment of Patent Application Scope (August 1990) Scope of patent application 1. A nitride-based system-v-group compound semiconductor device, comprising: a substrate having first and second main surfaces: I: ----- Xiang— I (please read- Please fill in this page again.) On the first main surface of the substrate, a semiconductor including an n-type thallium nitride-based rhenium-V compound semiconductor layer and a p-type gallium nitride-based semiconductor-v-group semiconductor semiconducting rhenium layer is formed. Laminated structure; a first electrode formed by being connected to the n-type semiconductor layer; and a second electrode being formed by being connected to the p-type semiconductor layer; the second electrode is transparent; It is made of metal material and forms ohmic contact with the p-type semiconductor layer. "2. For the device in the scope of patent application-item 1, the light emitted by the device can be observed from the first main surface of the substrate. The device of the first scope of the patent; the second electrode is composed of a nickel layer formed remotely from the P-type semiconductor layer and a gold layer formed thereon. 4. For the device of the first patent application group, the second electrode has a thickness of 0.0000 μ μ to 1 μm. 5. For the device of the first or third or fourth patent application, the above device contains The second main surface of the substrate supports the lead frame of the device. 6. Like the device in the scope of the patent application, the electrical connection to the second electrode includes a bonding pad for bonding to the wire.锖 _The device in the scope of patent No. 6, the adhesive pad is composed of at least two kinds of metals including gold, poultry, or no aluminum or chromium. _ Metal materials · Central Ministry of Economic Affairs Printed by a consumer cooperative. 8. If the device of the patent application group No. 6 is used, the bonding pad is formed of a metal material consisting of gold and titanium, nickel, indium, and gold and white, and contains at least one metal. 9. As for the device in the scope of the patent application, the adhesive pad is formed of the same material as the second electrode. 10. If the device in the scope of the patent application is applied for, the adhesive pad is formed by the recording layer directly connected to the second electrode and the gold layer formed thereon. 11. If the device in the scope of the patent application is applied for The second electrode is an exposed notch with a palatal surface on the surface of the p-type semiconducting Zhao layer, and the notch is filled with the above-mentioned adhesive pad. 210X297 mm) 4 0945 patent application scope Yinzheng 2 of Beihai Consumer Cooperative, Ministry of Economic Affairs of the People's Republic of China-If the scope of the patent application is No. I: The electrode is stronger and connected to the p-type semiconducting device. Form 12 body / metal material. Made of aluminum, or chromium, aluminum, and gold: the bonding pad is made of a metal material composed of a separate metal. Select at least two kinds of gold in the composition group. 14 · The most remote position of the electrode in the 6th item of the patent scope of the patent application. The adhesive is arranged at a distance from 15 · The first item of the patent application scope. a.. H 16 t ΐ formed protective film to "ί 2; ί 0 and insulating〗 alumina, titanium oxide or silicon nitride to install strict / protective film is made of silicon oxide, 17. if applied % Of the patent scope of 15%. The surface of the electrode. Teaching set 18. If the application of the patent scope of the 6th scope of the protective film formed by covering materials, cover the edge 19. If the patent scope of the cover of the second electrode Adhesive 塾 Μ 绍 绍 绍 钦 钦 钦 氧化 氧化 氧化 氧化 氧化 形 形 形 形 形 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 形 形 形 氧化 形 形 形 形 形 形 形 形 形 疋 疋 疋 疋 疋 疋 疋 疋 氧化 氧化 氧化 氧化 范围 范围 范围 范围 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 保护 保护 保护 保护 保护 保护 保护 保护 The protective film covers No. 1 21. Species IE-V Group A substrate of a semiconductor device having i-th and second main surfaces ... The method of forming on this substrate side includes an n-type gallium nitride-based compound _ ¥ group compound 1 and a p-type gallium nitride-based compound semiconductor layer. A half-layered gallium nitride-based compound semiconductor light-emitting device connected to the p-type semiconductor layer containing nickel or nickel and gold A metal material layer; smelting the metal material layer at a temperature of 4001 or more to achieve ohmic contact with the ▲ semiconductor layer; therefore, an ohmic electrode in direct contact with the second semiconductor 'layer is provided. A gallium nitride-based mv group compound A semiconductor device comprising a substrate having first and second main surfaces; the main surface of the substrate is formed with an n-type gallium nitride-based compound—a group V compound—the protective film covers Semi-conductor {Please read the note ^^ on the back before filling this page) 22 This paper size uses China National Engagement Rate (CNS) Α4 size (210X297 mm) 403945 ----— Applicable patent scope A8 B8 C8 D8 Printed conductor layer and bulk laminate structure of the Consumer Cooperative of the Central Bureau of the Ministry of Economic Affairs. The n-type semiconductor layer is connected to form a first electrode. The second electrode is connected to the p-type semiconductor layer. The first electrode is composed of It is formed of a combination of metal materials such as titanium, aluminum, or gold, and forms an ohmic contact with the N-type semiconductor layer. For the device in the scope of patent application No. 22, the i-th electrode is formed by directly connecting to the n-type half-body layer. A titanium layer, an aluminum layer, or a gold layer is formed. 24. The device of claim 22 in the scope of patent application, the first electrode is a titanium layer formed by directly connecting to the n-type semiconductor, and the titanium layer is formed on the titanium layer. It consists of a layer of gold formed on the aluminum layer and a layer of gold formed on the aluminum layer. • For the device in the scope of patent application No. 22, the first electrode is a first film formed of a metal material composed of titanium and metal. And a second film formed on the first film with a high melting point metal material having a higher melting point than aluminum. ^ 6. If the device of the scope of patent application is applied for, the second film contains titanium. The device of the scope of the patent, the second film is made of gold, titanium, and / or nickel. 28 = The second main surface of the device substrate in the 22nd scope of the patent application holds the lead frame of the device. 29 · = The device of the scope of application for patent No. 22, which is electrically connected to the second electrode 'and contains an adhesive pad which is adhered to the adhesive wire. 〇. = Apparatus No. 29 in the scope of patent application, the adhesive pad is arranged at the farthest position from the first electrode. 31 ‘t The device according to item 22 of the patent, wherein the second electrode is formed of a metal material containing nickel and gold. 32. A method for manufacturing a gallium nitride-based m_v group compound semiconductor device: A substrate having first and second main surfaces, and an n-type gallium nitride-based v-group compound provided on the substrate is formed on the substrate. Carcass layer and p-type gallium nitride-based π-v group compound semiconductor layer with rich body lamination structure; ® j τ is connected to the n-type semiconductor layer to form titanium and aluminum or P-type gallium nitride series Π-V The semiconducting branch of the compound semiconductor layer The semiconducting gold ---------------- 11¾ ------- ^ I (Please read the precautions on the back before filling in this (Page) This paper is based on the Chinese National Standard (CNS) A4 (210X297 mm) 403945 Α8 Β8 C8 D8 π, the scope of patent application for the metal material layer of the Central Government Standards Bureau Beige Consumer Cooperative Co., Ltd .; The metal material layer 400. (: The smelting at the above temperature achieves ohmic contact with the n-type semiconductor, so an ohmic electrode of the 0-type semiconducting layer is provided. 33. = Method of applying for item 32 of the patent scope, the metal constituting the ohmic electrode includes a direct contact A titanium layer formed on the n-type semiconductor layer, an aluminum layer formed on the n-type semiconductor layer, and / or a gold layer. 34. A gallium nitride-based group III-V compound semiconductor device; And a second main surface of the substrate, a semiconductor laminated structure including an n-type gallium nitride-based 冚 -V compound semiconductor layer and a p-type gallium nitride-based M_V group compound semiconductor layer is formed on the first main surface of the substrate Connected to the n-type semiconductor layer to form a first ohmic electrode; connected to the p-type semiconductor layer to form a second ohmic electrode; y the first electrode is formed of a combination of metal materials including titanium, aluminum, or gold 'and A second electrode is formed in contact with the N-type semiconductor layer and the ohmic conductor layer, and the second electrode is formed of a metal material including lithium or nickel and gold, and is in contact with the p-type semiconductor layer. Device of scope item 34, 1st The electrode is composed of a titanium layer formed directly on the n-type semiconductor layer, a Shao layer formed on the titanium layer, and a gold layer formed on the aluminum layer. Device, the second electrode is composed of a nickel layer formed directly on the p-type semiconductor layer, and a gold layer formed on the nickel layer. The 2 electrodes are electrically connected, and include bonding pads that are bonded to the bonding wire. 3 8. If the device in the scope of patent application No. 37, the first main surface of the substrate is square 'The bonding pad is arranged on the second electrode 1 corner, the first electrode is disposed at the corner of the n-type semiconductor layer on the square diagonal line including the first corner. 39_ If the device of the scope of patent application No. 38, the bonding pad is directly connected to the second electrode The nickel layer formed, and the metal formed on the nickel layer, (please read the note on the back first and then fill in this page) The paper size of the paper is based on China National Standard (CNS) A4 specification (210X297 mm) 403945 application Patent scope Made up. 4〇ΐ: ϊί = Γ37 item of device, the " electrical ... semiconductor layer of the eight main electrodes have exposed the notch portion, the bonding pad is filled with the portion 'the bonding pad or the first layer of nickel, and formed Chromium 41 in the semiconductor layer of ^ factory _ If the scope of patent application: the item is on the 2 layer of this / department, the gold layer. 42 = The transparent and insulating film 1 is provided with a substantially full coverage. 2. The device film of item 41 in the scope of patent application supports the lead frame of the device on the main surface. t 3_ = Apparatus No. 42 in the scope of patent application 44 Z Ϊ Observe the light emitted by this device. ~ The main surface t of this application applies for item 1 or 34 of the patent scope, Α is composed of a group 4 compound semiconductor town, P-type nitride = m_V compound semiconductive heterolayer is doped: The main cover of the substrate is the Jth main cover of the substrate (please read the precautions on the back before filling in this page)> Customization · The Central Standards Bureau of the Ministry of Economic Affairs printed this paper size and used the Chinese national kneading car (CNS) 8 4 specifications (210X297 mm) No. 83103775 Patent Application Amendment of Patent Application Scope (August 1990) Scope of patent application 1. A nitride-based system-v-group compound semiconductor device, comprising: a substrate having first and second main surfaces: I: ----- Xiang— I (please read- Please fill in this page again.) On the first main surface of the substrate, a semiconductor including an n-type thallium nitride-based rhenium-V compound semiconductor layer and a p-type gallium nitride-based semiconductor-v-group semiconductor semiconducting rhenium layer is formed. Laminated structure; a first electrode formed by being connected to the n-type semiconductor layer; and a second electrode being formed by being connected to the p-type semiconductor layer; the second electrode is transparent; It is made of metal material and forms ohmic contact with the p-type semiconductor layer. "2. For the device in the scope of patent application-item 1, the light emitted by the device can be observed from the first main surface of the substrate. The device of the first scope of the patent; the second electrode is composed of a nickel layer formed remotely from the P-type semiconductor layer and a gold layer formed thereon. 4. For the device of the first patent application group, the second electrode has a thickness of 0.0000 μ μ to 1 μm. 5. For the device of the first or third or fourth patent application, the above device contains The second main surface of the substrate supports the lead frame of the device. 6. Like the device in the scope of the patent application, the electrical connection to the second electrode includes a bonding pad for bonding to the wire.锖 _The device in the scope of patent No. 6, the adhesive pad is composed of at least two kinds of metals including gold, poultry, or no aluminum or chromium. _ Metal materials · Central Ministry of Economic Affairs Printed by a consumer cooperative. 8. If the device of the patent application group No. 6 is used, the bonding pad is formed of a metal material consisting of gold and titanium, nickel, indium, and gold and white, and contains at least one metal. 9. As for the device in the scope of the patent application, the adhesive pad is formed of the same material as the second electrode. 10. If the device in the scope of the patent application is applied for, the adhesive pad is formed by the recording layer directly connected to the second electrode and the gold layer formed thereon. 11. If the device in the scope of the patent application is applied for The second electrode is an exposed notch with a palatal surface on the surface of the p-type semiconducting Zhao layer, and the notch is filled with the above-mentioned adhesive pad. 210X297 mm) D8 Patent application scope 2 * If the device of patent application scope item u, the adhesive pad is formed with a gold eyebrow material that is stronger than the second electrode and connects to the p-type semiconductor layer / 3. In the device of the range 12, the bonding pad is a golden eyebrow material composed of at least two kinds from a group consisting of a single mover, or a group consisting of chromium, aluminum, and gold. 1 4 · As for the device in the 6th scope of the patent application, the adhesive pad is arranged at the farthest position from the electrode. 1 5 'As in the 1st device in the patent application park, the material is transparent and insulating. The protective film is formed to cover the second electrode. 16. The device such as the scope of patent application No. 15. The protection system is formed of hard oxide 'alumina, titanium oxide or silicon nitride. Γ7. In the device of 15 items, the protective film covers the surface of the first electrode β 18. For the device of item 6 in the scope of patent application, a protective film made of a transparent and insulating material covers the second electrode and dots Put together. 19 · If the device in the scope of patent application No. 18, the protective film is formed of silicon oxide, alumina, titanium oxide or silicon nitride. 20. If the device in the scope of patent application No. 18, the protective film is covered The surface of the first electrode. 21. A method for manufacturing a gallium nitride-based compound-V compound semiconductor device: a substrate having first and second main surfaces, and a first main Φ formed on the substrate to provide and include an n-type gallium nitride system冚 -ν group semiconductor semiconducting chain layer and p-type gasification recording system Π-V group semiconductor semiconducting layer of the semiconductor layer of the nitride layered plate-V compound's semiconductive short light-emitting device:, " Printed by the Macao Consumers Cooperative of China ’s Ministry of Economic Affairs, the P-type semiconducting layer is connected to the metal material layer containing silk or nickel and gold: The metal material layer is given a temperature of more than 400 ° C, and reached The contact with Ou Jun of the ρ wound semiconducting layer 'hence' provides a light-transmitting ohmic electrode in direct contact with the p-type semiconducting Zhaofang. a " 22. A gallium nitride-based melon-V compound semiconducting device; comprising: a substrate having first and second main surfaces; and an n-type containing substrate formed on the first main surface of the substrate. Nitrile Recorder-V Compound Semiconductor_Prostitute-2- This paper size is forced to use the Chinese National Standard (CNS) A4 grid (210 X 297 mm). The scope of patent application A8 B8 C8 D8 Central Ministry of Economic Affairs Printing by the local co-operative consumer cooperatives] :: A gallium nitride-based melon-titanium compound semiconductor is connected to the n-type semiconductor layer to form a first electrode; it is connected to the p-type semiconductor layer to form a first electrode 2 electrode; S Ϊ j pole is made of a combination of yin, ming or gold, etc.] gold, which is formed of materials and is in ohmic contact with the > type 1 semiconductor layer; It is formed by the second metal material including NOR wire and gold, and it is in ohmic contact with the p-type semiconductor. 23. For the device in the scope of patent application No. 22, the i-ohmic electrode is directly connected. In the n-type A titanium layer formed by semiconducting layers is formed of an IS layer formed on the titanium layer and a gold layer formed on the chain layer. 24 · If the device in the scope of patent application No. 23, the second electrode is composed of a nickel layer directly connected to the P-type semiconductor layer, and a gold layer formed on the nickel layer. The device in the scope of the patent No. 24 is electrically connected to the second electrode, and contains a bonding pad bonded to the bonding wire. 26. For the device in the scope of the patent No. 27, the first main surface of the substrate is square The adhesive pad is disposed at the first corner of the second electrode, and the first electrode is disposed at the corner of the n-type semiconductor layer on the square diagonal line including the first corner * 27. If the device of the scope of patent application No. 26, The adhesive pad is composed of a nickel layer formed by directly connecting the second electrode, and a gold shoulder formed on the nickel layer. 28. = The installation of the 25th item of the patent scope of the application, the 苐 2 electrode has an exposed type. The notch portion of the surface of the semiconductor layer is a bonding pad filling portion. The bonding pad has a first layer of chromium or nickel that directly connects the P-type semiconductor layer and the gold layer formed on the second layer. Β 29 . For example, the device in the 28th area of the patent application has a transparent and insulation covering the device in all aspects. Protective film 30. For example, the main frame of the 29th device of the patent application group supports the lead frame of the device. 31. The 30th device of the patent application scope can view the light emitted by the device.--( Verse 4 «Read the notes on the back side and fill out this page again.] The main part of the substrate has the main power and two sides of the substrate. IT 铼 -3- This paper is based on the Chinese National Standards (CMS). 4 specifications (2 丨 0 > < 297 gong) I.1 I AB, CD v \. VI. Patent application scope 32. Such as the device of patent application scope item 1 or 22, where p-type gallium nitride The Titanium-V compound semiconducting Zhao layer is a p-type GaN doped with magnesium. 33. Such as the device entrusted by Shenqing Patent No. 22, where .. type. The semi-conducting Zhao layer is an η-type GaN that forms the ginseng complex stone xi. Λ «(Read the precautions on the back before filling in this page) Printed by the Central Laboratories Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives, the paper scale is free to use Chinese National Standards (CNS) Α4 grid (210X297 mm)