TW403945B - Gallium nitride based III - V group compound semiconductor device having an ohmic electrode and producing method thereof - Google Patents

Gallium nitride based III - V group compound semiconductor device having an ohmic electrode and producing method thereof Download PDF

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TW403945B
TW403945B TW083103775A TW83103775A TW403945B TW 403945 B TW403945 B TW 403945B TW 083103775 A TW083103775 A TW 083103775A TW 83103775 A TW83103775 A TW 83103775A TW 403945 B TW403945 B TW 403945B
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Taiwan
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electrode
scope
patent application
gold
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TW083103775A
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Chinese (zh)
Inventor
Shuji Nakamura
Takao Yamada
Masayuki Senoo
Motokazu Yamada
Kanji Bando
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Nichia Kagaku Kogyo Kk
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Priority claimed from JP12489093A external-priority patent/JP2803742B2/en
Priority claimed from JP12931393A external-priority patent/JP2748818B2/en
Priority claimed from JP20727493A external-priority patent/JP2783349B2/en
Priority claimed from JP23468593A external-priority patent/JP2770717B2/en
Priority claimed from JP23468493A external-priority patent/JP2697572B2/en
Application filed by Nichia Kagaku Kogyo Kk filed Critical Nichia Kagaku Kogyo Kk
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Publication of TW403945B publication Critical patent/TW403945B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]

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Abstract

This invention relates to a gallium nitride based III - V group compound semiconductor device, and such semiconductor device comprises a gallium nitride based III - V group compound semiconductor layer on a substrate and an ohmic electrode provided on contact with the semiconductor layer. The foregoing ohmic electrode includes a metallic material and has been annealed at the temperature above 400 DEG C.

Description

403945 五、發明説明(2 ) 驩上外加所定的電流而使其達成其發光機能的罨搔直接安 装在基板本身。P電極及η電棰都必須直接連接在偁別之 化合物半導髏層及η型化合物半導髏層上來形成。ρ電極保 証對Ρ型化合物半導體雇整髏的均一性電流附加,並且為了 從裝置獲得均一性發光,幾乎將Ρ型層全面的覆蓋來形成。 然而,過去的Ρ電極因屬非透光性,過去的發光装置之發光 ,為了避免由於PS電極發光袠減所造成的外部置子效率惡 化,無法在PS化合物半導體層及η型化合物半導體靥所形 成的基板方面的相反方向來加以觀察。 因此.若將該習用化合物半導體發光裝置固定在鉛框 時,因使不形成化合物半導髏層之基板面朝向上方,Ρ笔極 及η電極在下方,而必須由二値鉛框來加以承載。亦即,必 須將一儲半導體薄Η跨載於二艟鉛框上。此時,為了規避 Ρ型化合物半導體層與η型化合物半導醱層之電氣性短路, 必須確保二掴鉛框間某種程度的間隔,自然的半導龌的一 値晶方規格也不得不放大到約在1mm2以上。因此,在習知 的裝置構造上,由一M晶片(Wafer)所獲得的薄片數必然的 變少。而且,讓二個鉛框的位置非常撤细的吻合,與氮化 鎵合物半導體的精巧之蝕刻(etching)技術也是必要的。 喳濟銪占夬缥準局員工消費合作社印" ~;f先'"?f背面之注意事項再缉寫太頁) 裝 線 其次,雖係有蘭於nig極,而就如上述,似乎讓P-η接 合型氮化条I-V族化合物半導醱發光裝置可以實現的,乃 是最近的事清,在遇去的MIS型構造之發光裝置方面,因電 搔偽利用舆高電阻率i型層的蕭待基屛障(short-key-barrier > ,η®極上幾乎不被注意。 習知的MIS構造的氮化錄条H -V族化合物半導靨發光 衣紙張尺度遇/H中丑』孓標iiUXSj甲4規格ι210χ·297公贷 403945 A6 B6 經濟部中央樣準局®:工消费合作社印製 五、發明説明(1 ) ****發明的背景**** 本發明係關於具有歐姆電極的氮化鎵系m -V族化合物 半導體裝置及其製造方法。 ****相關技術之説明**** 近年,使用氮化镓(GaN)、鋁氮化鎵(GaAIN)、鎵氮化 絪(InGaN)、鎵氮化銦鋁(inAlGaN)等之氮化鎵系H -V族化 合物半導體材料的發光裝置受到注目。該發光裝置通常在 基板上具有η型氮化鎵系化合物半導體層,與p型雜質(dopant) 摻雜(dope)之氮化鎵系Μ -V族化合物半導體層所層合的構 造。 以前,Ρ型雜質所摻雜之氮化鎵系Μ -V族化合物半導 體層仍屬高電阻之i型,因此過去的裝置爲所謂的MIS型構 造。最近,將高電阻i型層轉化爲低電阻的P型層的技術, 如在特開平2-257679號、持開平3_218325號,及特開平5_ 183189號所揭示的。似乎已能實現p-n接合型的氮化鎵系II -V族化合物半導體發光裝置。 然而,若是該P-η接合型之氮化镓系化合物半導體要能 實現的話,接在P型層及/或η型層所形成電極之各種問題是 很明白的。 在當前的ρ-η接合型氮化鎵系I -V族化合物半導體發 光裝置,由其製造上的限制,在化合物半導體層之中,最 上層有Ρ型化合物半導體層。而且,一般上是使用透明之藍 寶石(Sapphire)基板來作爲該装置之基板。與使用在其他 半導體發光裝置上之砷化鎵、銘磷化鎵般之半導體基板不 同,因藍寶石是不絶緣性,裝置無法將爲了在化合物半導403945 V. Description of the invention (2) The plutonium which is applied with a predetermined current to achieve its light emitting function is directly mounted on the substrate itself. Both the P electrode and the η-electrode must be directly connected to the other compound semiconductor layer and the n-type compound semiconductor layer to form. The p-electrode ensures that a uniform current is added to the P-type compound semiconductor, and in order to obtain uniform light emission from the device, the P-type layer is almost completely formed. However, in the past, the P electrode was non-translucent, and the light emission of the past light-emitting device was not able to reduce the efficiency of external electrons caused by the decrease in light emission of the PS electrode. Observe the opposite direction of the formed substrate. Therefore, if the conventional compound semiconductor light-emitting device is fixed in a lead frame, since the substrate surface on which the compound semiconducting layer is not formed faces upward and the P pen electrode and the η electrode are below, the lead frame must be used. Carrying. That is, a semiconductor thin film must be carried on a lead frame. At this time, in order to avoid the electrical short circuit between the P-type compound semiconductor layer and the η-type compound semiconductor layer, it is necessary to ensure a certain interval between the leadframes. Magnify to about 1mm2 or more. Therefore, in the conventional device structure, the number of sheets obtained from one M wafer (Wafer) inevitably decreases. In addition, it is necessary to make the positions of the two lead frames very fine, and the delicate etching technology of the gallium nitride semiconductor is also necessary.喳 f 铕 铕 夬 缥 夬 缥 员工 The staff consumer cooperatives printed by the Bureau of quasi-Bureau Bureau "~; f first '"? f Note on the back and then write too much page) The second line, although there is a Lan Yu Nig pole, as above, It seems that it is possible to realize the P-η junction nitrided IV group compound semiconducting fluorene light-emitting device. However, it is recently clear that, in the light-emitting device of the MIS-type structure encountered, the high resistivity is used due to the pseudo-electricity. The short-key-barrier of the i-type layer (short-key-barrier >, η® is hardly noticed. The conventional MIS structure nitrided stripe H-V group compound semi-conducting fluorescein coat paper size meets / H "Ugly" standard iiUXSj A 4 specifications ι 210χ · 297 public loan 403945 A6 B6 Central Bureau of Standards of the Ministry of Economic Affairs®: printed by the Industrial and Consumer Cooperatives V. Description of the invention (1) **** Background of the invention **** A gallium nitride-based m-V group compound semiconductor device having an ohmic electrode and a manufacturing method thereof. **** Explanation of related technologies **** In recent years, gallium nitride (GaN) and aluminum gallium nitride (GaAIN) have been used. GaN-based H-V group compound semiconductor materials such as gallium hafnium nitride (InGaN), gallium indium aluminum nitride (inAlGaN), etc. Attention. This light-emitting device usually has a structure in which an n-type gallium nitride-based compound semiconductor layer is laminated on a substrate and a p-type dopant-doped gallium nitride-based M-V compound semiconductor layer. Previously, the gallium nitride-based M-V compound semiconductor layer doped with P-type impurities was still a high-resistance i-type, so the previous device was a so-called MIS-type structure. Recently, the high-resistance i-type layer was transformed into Low-resistance P-type layer technology, as disclosed in Japanese Patent Application Laid-Open No. 2-257679, Hikai Patent No. 3_218325, and Japanese Patent Application No. 5_183189. It seems that a pn-junction type gallium nitride-based II-V group compound has been realized Semiconductor light-emitting devices. However, if the P-η junction type gallium nitride-based compound semiconductor can be realized, various problems of electrodes formed on the P-type layer and / or the η-type layer are clearly understood. ρ-η junction type gallium nitride-based group I-V compound semiconductor light-emitting devices have manufacturing restrictions. Among the compound semiconductor layers, a P-type compound semiconductor layer is the uppermost layer. In addition, transparent sapphire is generally used. (Sapphire ) Substrate as the substrate of the device. Unlike the semiconductor substrates such as gallium arsenide and gallium phosphide used in other semiconductor light-emitting devices, sapphire is not insulating, so the device cannot be used for compound semiconductors.

{蜻先閲讀背面之注意事項再填窝本頁J 裝 .訂. .線 本紙張尺度逋用令國國家搮準(CNS)f 4规格(210X297公釐) 第83103775號專利申請案 中文說明書修正頁(90年3月){Dragon first read the precautions on the back and then fill in this page. J Binding. Binding .. Thread paper size order (CNS) f 4 specification (210X297 mm) No. 83103775 Patent Application Chinese Specification Amendment Page (March 90)

(4-0^ 五、發明説明(i ****發明的背景**** 本發明係關於具有歐姆電極的氮化镓系ffl _v族化合物 半導體装置及其製造方法。 ****相關技術之説明**** 近年,使用氮化镓(GaM)、鋁氮化镓(GaA1N)、镓氮化 姻(InGaN)、孩氮化纟S鋁(InAlGaN)等之氮化镓系I - V族化 合物半導體、材料的發光裝置受到注目。該發光裝置通常在 基板_£具有η型氮化镓系化合物半導體層,與p型雜質 (dopant) 掺雜(dope)之氮化镓系]j -v族化合物半導體眉所層合的構 造0 以前,p型雜質所摻雜之氮化镓系m -V族化合物半導 體層仍屬高電阻之i型,因此過去的装置爲所謂的MIS型構 造。最近,將高電阻i型/1轉化爲低電阻的p型眉的技術, 如在持開平2_257679號、持開平3_218325號,及持開平5_ 183189號所揭示的。似乎已能實現p_n接合型的氮化镓系I -V族化合物半導體發光裝置。 然而,若是該p-n接合型之氮化H:系化合物半導體要能 實現的話,接在p型層及/或η型層所形成電極之各種問題是 很明白的。 ’’ 在當前的P-η接合型氮化镓呆II -V族化合物半導體發 光装置,由其製造上的限制,在化合物半導體層之中,最 上眉有Ρ型化合物半導體層。而且,一般上是使用透明之藍 賨石(Sapphire)基板來作爲該裝置之基板◊與使用在其他 半導體發光裝置上之砷化镓、鋁磷化鎵般之半導體基板不 同,因藍袞石是絕緣性,裝置無法將爲了在化合物半遵(4-0 ^ V. Description of the invention (i **** Background of the invention ****) The present invention relates to a gallium nitride-based ffl_v group compound semiconductor device having an ohmic electrode and a method for manufacturing the same. **** Related Explanation of technology **** In recent years, gallium nitride (GaM), aluminum gallium nitride (GaA1N), gallium nitride (InGaN), ytterbium nitride aluminum (InAlGaN), and other gallium nitride-based I- Group V compound semiconductor and material light-emitting devices have attracted attention. This light-emitting device usually has an n-type gallium nitride-based compound semiconductor layer on the substrate, and a gallium nitride-based dopant dopant] j -Laminated structure of -v compound semiconductor eyebrows 0 Previously, gallium nitride-based m-V group compound semiconductor layers doped with p-type impurities were still high-resistance i-types, so the past devices were so-called MIS-type structures Recently, the technology of converting high-resistance i-type / 1 to low-resistance p-type eyebrows, as disclosed in No. 2_257679, No. 3_218325, and No. 5_183189, seems to be able to achieve p_n junction type GaN-based I-V compound semiconductor light-emitting device. However, if this is a pn junction type nitride H If a compound semiconductor is to be realized, the various problems of electrodes formed on the p-type layer and / or the η-type layer are well understood. '' In current P-η junction type gallium nitride, II-V group compound semiconductors The light-emitting device is limited by its manufacturing. Among the compound semiconductor layers, there is a P-type compound semiconductor layer at the top. In addition, a transparent sapphire substrate is generally used as the substrate of the device. The semiconductor substrates like gallium arsenide and aluminum gallium phosphide are different on other semiconductor light-emitting devices. Because blue sapphire is insulating, the device cannot use

II

(妆先《«背面之注*事項再填S本頁J .装 訂 .¾濟部中夬»準扃只工消f合作社印ft 本纸法又度逍用t a 3家«準(CNS> T 4规格(210χ 297公 403945 五、發明説明(2 ) 驩上外加所定的電流而使其達成其發光機能的罨搔直接安 装在基板本身。P電極及η電棰都必須直接連接在偁別之 化合物半導髏層及η型化合物半導髏層上來形成。ρ電極保 証對Ρ型化合物半導體雇整髏的均一性電流附加,並且為了 從裝置獲得均一性發光,幾乎將Ρ型層全面的覆蓋來形成。 然而,過去的Ρ電極因屬非透光性,過去的發光装置之發光 ,為了避免由於PS電極發光袠減所造成的外部置子效率惡 化,無法在PS化合物半導體層及η型化合物半導體靥所形 成的基板方面的相反方向來加以觀察。 因此.若將該習用化合物半導體發光裝置固定在鉛框 時,因使不形成化合物半導髏層之基板面朝向上方,Ρ笔極 及η電極在下方,而必須由二値鉛框來加以承載。亦即,必 須將一儲半導體薄Η跨載於二艟鉛框上。此時,為了規避 Ρ型化合物半導體層與η型化合物半導醱層之電氣性短路, 必須確保二掴鉛框間某種程度的間隔,自然的半導龌的一 値晶方規格也不得不放大到約在1mm2以上。因此,在習知 的裝置構造上,由一M晶片(Wafer)所獲得的薄片數必然的 變少。而且,讓二個鉛框的位置非常撤细的吻合,與氮化 鎵合物半導體的精巧之蝕刻(etching)技術也是必要的。 喳濟銪占夬缥準局員工消費合作社印" ~;f先'"?f背面之注意事項再缉寫太頁) 裝 線 其次,雖係有蘭於nig極,而就如上述,似乎讓P-η接 合型氮化条I-V族化合物半導醱發光裝置可以實現的,乃 是最近的事清,在遇去的MIS型構造之發光裝置方面,因電 搔偽利用舆高電阻率i型層的蕭待基屛障(short-key-barrier > ,η®極上幾乎不被注意。 習知的MIS構造的氮化錄条H -V族化合物半導靨發光 衣紙張尺度遇/H中丑』孓標iiUXSj甲4規格ι210χ·297公贷 403945 A6 B6_ 五、發明説明(3 ) 裝置之η電極材料,如特開昭5S_9442號所掲示的爲鋁或其 合金。而且,铟也經常被拿來使用。然而,鋁與銦都難得 與η型氮化鎵系]j -V族化合物半導體層有充分的接觸歐姆 ,同時也發現由於電極的冶煉(anneal)導致變質而容易喪 失導電性。 總之,過去没有達成能夠充分滿足與氮化鎵系I -V族 化合物半導體的接觸歐姆之電極材抖。 ****發明的摘要**** 因此,本發明的目的是提供具備達成與氮化鎵系I -V 族化合物半導體層的接觸歐姆之氮化鎵系Μ -V族化合物半 導體發光裝置及其製造方法。 本發明的其他目的是提供具備可以從基板上所形成的 氮化鎵系I -V族化合物半導體層方面進行發光裝置的發光 觀察之Ρ電極的氮化镓系Ε -V族化合物半導體發光裝置及 其製造方法。 本發明的另一目的是提供達成與η型氮化鎵系I -V族 化合物半導體層良好的接觸歐姆之η電極的氮化镓I -V族 化合物半導體發光裝置及其製造方法。 本發明的第一特點是: 基板 該基板上所形成,包含η型氮化鎵系I - V族化合物半 導體層及ρ型氮化鎵系H -V族化合物半導體層的半導體層 合構造。 連接在該η型半導體層而形成的第1電極,及連接在該 ρ型半導體層而形成包含金屬材料的透光性第2電極,提供 本紙張尺度適用中國國家櫺準(CNS)f 4规格(210X297公;' ...................................................................... ..........裝......................訂.....................線 <請先閱讀背面之注意事項再填寫本頁} 經濟部中央搮準局ΛΗ消费合作社印製 經濟部中央椹準局員工消费合作社印製 A64»撕5-—2S___ 五、發明説明(4 ) 具備此二電極的氮化鎵系Μ -V族化合物半導體裝置。 上述的第2電極(Ρ電極),係將金屬材料層連接在ρ型半 導體層而形成,將之冶煉,因而使該金屬材料層具透光性 的同時,得以形成達成與Ρ型半導體層的接觸歐姆。 本發明的第二特點是: 在基板上具有包括η型氣化嫁系II - V族化合物半導體 層及ρ型氮化鎵系]I -V族化合物半導體層的半導體層合構 造,連接該η型半導體層而形成,包含钛及銘,或金的第1 電極,及連接在該ρ型半導體層而形成的第2電極,提供包 含此二電極的氮化稼系]II -V族化合物半導體發光裝置。 上述的第1電極(η電極),係將含有钛及鋁或金的合金 層,或將含有鈦層及鋁或金層的多層構造連接在η型半導體 層而形成,將之冶煉,因而可以形成能達成與η型半導體層 的接觸歐姆。 本發明的第三特點是: 基板 該基板上所形成含有η型氮化鎵系I - V族化合物半導 體層及Ρ型氮化鎵系I -V族化合物半導體層的半導體層合 構造。 連接該η型半導體層而形成,包含鈦及鋁或金的第1電 極,及連接該Ρ型半導體而形成,包含金屬材料的透光性第 2電極,提供具備此二電極的氮化鎵系II -V族化合物半導 體裝置。 本發明的第四特點是: ’ 在基板上所形成的氮化鎵系Μ -V族化合物半導體層, ^紙張尺度逋用國家櫺竿(CNS)甲4規格(210X297公釐) (請先閲讀背面之注意事項再填窝本頁) .裝 .訂 .線 A6 B6 408945 五、發明説明(5 ) <請先閲讀背面之注意事項再填寫本頁) 及連接在該半導體層而形成,爲使達成與該半導體層的接 觸歐姆加以冶煉的,包含金屬材料的電極,提供具備二者 的氮化鎵系Π -V族化合物半導體装置。 ****圖式之簡要説明**** 圖1係表示本發明第一式樣之發光裝置安裝鉛框的狀 態之概略剖面圖。 圖2係表不本發明p電極之電流-電擊特性圖(X軸的1刻 度爲0.5V,Y軸的1刻度爲0.2mA)。 圖3係本發明的第二式樣之發光裝置平面圖。 圖4係沿著圖3的IV -IV線之剖面圖。 .裝 圖5係本發明第二式樣的變形例之斜視圖。 圖6係本發明的第三式樣之發光裝置之剖面圖。 圖7係本發明的第三式樣之第一變形例剖面圖。 圖8係本發明的第三式樣之第二變形例的剖面圖。 圖9係本發明的第三式樣之第三變形例的平面圖。 .線 圖10係本發明的第四式樣之半導體發光裝置之剖面圖。 圖11A至圖11D係本發明不同η電極之電流-電壓特性, 與比較例同時表不的圖(各圖X軸的1刻度爲〇 . 5 V ^ Υ軸的1刻 度爲5〇pa)。 經濟部中央搮準局負工消费合作社印製 圖12A至圖12D係本發明之外的不同η電極之電流-電壓 特性,與比較例同時表示的圖(各圖X軸的1刻度爲0.5V,Υ 軸的1刻度爲50邱)。 圖13A至圖13D係將本發明之不同η電極之電流-電壓特 性,與比較例同時表不的圖(各圖的1刻度爲〇 . 5V,Υ軸 1刻度爲50;ua)。 本紙張尺度適用中國國家楳準(CNS)T4规格(210x297公釐) 403945 經濟部中央樣準扃貝工消费合作社印製 A6 B6_ 五、發明説明(6 ) 圖14 A至圖14 D係將本發明之外的不同η電極之電流-電 壓持性,與比較例同時表示的圖(各圖的X軸1刻度爲〇.5V, Υ軸1刻度爲50;ua)。 圖15是説明η電極的黏合試驗之圖。 圖I6係本發明的第五式樣之半導體發光装置之部分剖 面圖。 發明的第五式樣的不同η電極之電流-電壓' Ά 特性,與ft参Λ同時表示之圖(各圖中的X軸1刻度爲〇. SV, Υ軸的1刻度爲50jua)。 ****具體實施例之詳細説明**** 在本發明所謂的氮化鎵系I-V族化合物半導體是包含 如GaN、GaAIN、InGaN、工nAlGaN的週期表第I族元素的 氮化物半導體之意。這些化合物半導體可以用式 In A1 Ga N表示,在此 xS 1、1、x+y芸 1 0 x y 1-x-y 而且,在本發明所謂的接觸歐姆是使用在半導體領域 的一般意義。 在本發明所謂的電極方面的透光性,係從氮化鎵系H -V族化合物半導體發光装翯發出的光,以1%以上的透過之 意,未必爲無色透明之意。透光性電極,一般是從氮化鎵 系]I -V族化合物半導體發光裝置發出的光,使其20至40% ,或超過此値的透過。 而且,在本發明的金屬材料若是含有2種以上的金屬, 將兩種以上的金屬預先合金,或各金屬層層合均可。金屬 材料包含2種以上金屬時,這些金屬的比率雖無特殊限制, 而各金屬至少含有〇.1原子%爲宜。 {請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家揉準(CNS)甲4規格(210X297公*) 403945 Α6 Β6 經濟部t央揉準局貝Η消费合作社印製 五、發明説明(7 ) 以下,將本發明參照附圖來做詳細説明。透過整個圖 ,同一處係以相同符號來表示。 圖1係將本發明的第一式樣之氮化鎵系I -V族化合物 半導體發光裝置1〇概略性的顯示。 這種發光裝置(LED) 10,是具有藍寶石等的透明且絶緣 性的基板11。將基板11的一邊之主面lla整個覆蓋的η型氮 化鎵系Μ -V族化合物半導體層12,係由〇.5)am至ΙΟμιη的厚 度所形成的。在η型半導體層I2上,雖以没有摻雜雜質爲佳 ,而理想是摻雜著矽、鍺、涵、硫、碲等的η型雜質。 η型半導體層12的表面是由ρ型氮化鎵系]H -V族化合物 半導體層I3之Ο.ΟΙμχη至Sjam的厚度所形成的。ρ型半導體層 I·3爲鋅、鎂、鈹、緦、鋇等p型雜質所掺雜,¢400¾以上 的溫度治煉(治煉方面可以參考持開平5-183189號公報)。 P型半導體層13,與η型半導體12的表面層同時作局部 性的蝕刻除去,而使η型半導體層12的表面局部的露出。 η型半導體層12的露出面形成η電極14。 本發明的Ρ電極1S大致將ρ型半導體全面覆蓋來形成。 這種Ρ電極1S係由金屬材料所形成的透光性歐姆電極。形成 ρ電極1S的金屬材料没有特別限制。例如,Ρ電極材料由金 、鎳、白金、鋁、錫、銦、鉻、鈦來選—種或二種以上的 金屬來作成。能擭得理想的接觸歐姆的金屬材料,至少包 含從鉻、鎳、金、鈦及白金所組成群體之中的二種金屬。 特別理想的金壩材料是包含金及鎳。金及鎳是鎳層直接接 觸在Ρ型半導體層13,其上要能形成金屬爲理想。 如上面所述,金屬材料爲包含2種以上的金屬時,他們 本纸張尺度逍用t國國家標準(CNS)甲4在(21〇父297公金) (請先閲讀背面之注意事項再填寫本頁) .裝 •訂 .線 經濟部中央欉準局貝工消费合作社印製 403945 五、發明説明(8 ) 具有各金屬層的層合構造,或預先合金化均佳。具有層合 構造的金屬材料料,是由後面説明的治煉來形成合金。 P電極15是利用諸如蒸鍍、濺射的普通覆被技術在p型 半導體層13上形成金屬材料層,再將之冶煉調製而成。冶 煉是以在400°C以上的溫度來進行爲理想。在不足400°C的 溫度進行的冶煉方面,顯示金屬材料層與p型半導體層13難 以形成足夠的接觸歐姆的傾向。冶煉是在未達氮化鎵系I -V族化合物半導體的分解溫度(l2〇(TC左右)的溫度來進行 ,治煉時間是以0.01分至30分爲理想。 此治煉的效果,與上述特開乎5_183189號所記載的效 果相同。即利用氣相成長法來成長的,將包含p型雜質的氮 化鎵系I -V族化合物半導體層用4〇0°C以上的溫度來冶煉 時,其電阻率急劇的降低。利用冶煉來將結合在半導體結 晶中的受體上的氫原子驅出,故使受體不純物活性化。因 此,利用將電極在4〇〇°C以上的溫度冶煉,有效的增加摻雜 著P型不純物的氮化鎵系Μ -V族化合物半導體的載體濃度 變爲易得接觸歐姆。在這種ρ型半導體層13上的接觸歐姆之 理想材料,與透光性的有無無關,其是含有金及鎳的金屬 材料。 用在Ρ電極1S的金屬材料,在冶煉後的厚度以Ο.ΟΟΙμιη 至lMm的厚度來形成的爲佳。由於冶煉,金屬材料層擴散到 P型半導體層I3的内部之同時,一部分向外部飛散而使厚度 變薄。利用在冶煉後希望最終厚度爲O.OOlwm至ίμιη,將金 屬材料層的厚度加以調節,可以使ρ電極15具有理想的透光 性。即使超過的厚度亦無大礙,但爲此一來,電極會逐 本紙張尺度逋《ΤΗ困家樣準(CNS)甲4規格(210x297公釐) .....................................................................................裝.......................玎.....................線 {請先閲讀背面之注意事項再填寫本頁) 403945 A6 B6 經濟部中央櫺準局Λ工消费含作社印製 五、發明説明(9 ) 渐的有帶金屬色的傾向而降低透光性。P電極15的厚度,在 上述範圍内,從透光性的觀點是越薄越好。然而,若太薄 了,電極15與p型半導體層13的接觸電阻有增加的傾向。爲 此一來,卩電極15的厚度,理想是0.005训1至0.2>^,特別理 想爲 0.01至 0.2μιη 〇 本發明的Ρ電極爲透光性,達成與Ρ型半導體的理想接 觸歐姆,使發光裝置的順方向電堅降低,提高裝置的發光 效率。 ****實驗例1**** 摻雜鋅的ρ型GaN層上,順次將鎳層及其上金層個別蒸 鍍Ο.ίμιη厚度,以600°C來冶煉,在使這些合金化的同時, 成爲透明而得到P電極,其厚度爲〇.〇3jum。將這種ρ電極的 電流-電壓特性在圖2以線A來表示。由此圖可知,P電極與 P型氮化镓系I -V於化合物半導體達成良好的接觸歐姆。 如此,具備此透光性歐姆P電極15的本發明之發光裝置 10,可以透過ρ電極15來進行發光的觀察。因此,如圖1所 示,作爲使用氮化鎵系化合物半導體以外的半導體的發光 裝置的手段,在一般使用的帽狀鉛框I8上,將基板U,其 未形成半導體層的底面,即第1主面11a,與對向的第2主面 lib可朝著鉛框18的方式載置。 P電極15,其局部上所形成的黏合墊I7之處,與連接在 其他的鉛框(金屬支柱)19上的金線般的黏合線21連接° 〇電 極14,是介於金線般的黏合線2〇,與帽狀鉛框I8連接。 本發明的理想情況,黏合墊17是單獨由金或含銘之金 ,或不含鉻的2種以上的金屬所形成的金屬材料爲理想的, 紙張尺度速用中國國家標準(CNS)甲4规格(210X297公釐)"""" (請先閱讀背面之注意事項再填窝本頁) 裝 •訂., -線. A6 B6 403945 五、發明説明(10 ) (請先閲讀背面之注意事項再填寫本頁) 含鋁之金或不含鉻的金屬材料,可列舉如金、鈦、鎳、銦 及/或含白金材料。由這樣的金屬材料所形成的黏合墊,與 P電極13的連結性良好,金線與線黏合,有時與由金線所形 成的球之連結性也是良好的。進而,這種金屬材料在冶煉 時,或爲了發光而對裝置的通電中,大致不會向P電極遷移 而使P電極變質(使透光性降低)。含鋁或鉻的金屬材料,通 電中比較短的時間(如500小時),就含遷移到p電極中,而 使之變質。 ****實驗例2**** 將藍賨石基板作爲基板11,厚度爲4Λ1ΠΙ的η型GaN層作爲 η型半導體層,厚度ljuiu的鎂摻雜p型GaN層作爲p型半導體層 ,圖1所示的裝置之P電極15之上形成由各種金屬材料所構 成的黏合墊。P電極15是將鎳層與金層依次各別蒸鍍0.ίμιη 的厚度,以600°C冶煉而使那些金屬合金化及變透明,而得 到的厚度爲〇.〇5wm之物。 更具體的,由下述表1所示黏合墊材料在P電極上形成 了黏合垫。即黏合墊是將表1的列所示的金屬層直接在P電 極上形成,其上將表1的行所示的金屬層蒸鍍,在P電極的 冶煉時,同時冶練而形成。黏合線爲金線。 將如此獲得的發光裝置,使其連續發光500小時,來調 查黏合墊對P電極上的影響。結果記載於表1。 經濟部中央搮準局貝工消费合作社印製 本紙張尺度適用圉家櫺準(CNS)甲4规格(210X297公釐) 403945 A6 B6 五、發明説明(11 ) 表1 金 鎳 鈦 絪 I白 鋁 鉻 金 很好 很好 好 好 好 不良 不良 鎳 很好 - - - - 不良 - 鈦 好 一 - - - 不良 - 姻 好 一 - - - 不良 - 鉑 好 一 - - - 不良 不良 鋁 不良 不良 不良 不良 不良 不良 不良 鉻 不良 - - - 一 不良 - <請先闐讀背面之ii意事項再場寫本頁) .裝 經濟部中央揉準局貝工消费合作社印製 表1中的"很好"是指裝置即使在發光500小時之後,黏 合墊完全不變色的仍保持初期的透光性,且顯示P電極與P 型半導體層的接觸歐姆特性没有變化的情況;"好"是指存 在黏金墊周圍的P電極部分雖略有變色,但不會讓發光產生 有意識的衰減程度,而且P電極與P型半導體層的接觸歐姆 特性顯示没有變化的情況;"不良"是指喪失P電極的透光性 ,並顯示喪失P電極與P型半導體層的接觸歐姆特性;是 指與P電極的有否變色無關,與金球的接結性是差的,線黏 合爲困難的黏合墊。 表1所示,如用Ni-Au來形成P電極時,若用p電極材料 的相同材料,即Ni-Au來形成黏合墊時,p電極完全没有變 色而仍然保持透光性。而且,單獨用金來形成黏合墊時也 能獲得相同的結果。然而,鉻或鋁兩者都極易向P電極中遷 .訂 線 本紙張尺度遑用中國國家標準(CNS)甲4規格(210x297公釐) A6 B6 403945 五、發明説明(12 ) 移,就算其中含有金,也會使P電極的特性劣化。 ****實驗例3**** 以Au-Ti來形成p電極(這種p電極的歐姆特性,比起Ni -AU電極略差)以外,進行與實驗例2相同的實驗。結果,單 獨用金,或Au-Ti來形成黏合墊的情況爲"很好",由金與鋁 ,或鉻以外的金屬(即鎳、鈦、銦或白金)所構成的金屬材 料來形成的情況爲"好",金與鋁,或鉻所構成的金屬材料 來形成的情況,得到"不良"的結果。 ****實驗例4**** 以AU-A1來形成p電極(這種p電極的歐姆特性,比起Ni -AU電極略差)以外,進行與實驗例2相同的實驗。結果,單 獨以金來形成黏合墊時爲π很好",由金與鋁,或鉻以外的 金屬(即鎳、钛、絪或白金)所構成的金屬材料來形成的情 況爲"好"的結果,而用由金與鋁所構成的金屬材料來形成 黏合墊的情況,用與Ρ電極相同材料則爲"不良"的結果。而 且,由金與鉻所構成的金屬材料的情況也是"不良”的結果。 圖3係本發明的第二式樣的半導體發光設置的平面圖, 圖4爲沿著圖3的線IV-IV的剖面圖。這種狀況是特別與ρ電 極用黏合墊的改良有關。爲這些圖所示,在透光性Ρ電極15 上,設置露出Ρ型半導體層13的表面之一部分的缺口處311 。黏合墊32是通過此一缺口處311與ρ型半導體層13強固的 連結的同時,與Ρ電極作電氣性的接續。在圖示的狀況方面 ,黏合墊32不只埋在缺口處311,並延至包圍缺口處311的 Ρ電極表面部分。缺口處311,隨著黏合墊32,設置在與設 置於η型半導體層12的η電極14最遠的位置爲佳(此一符合圖 本紙張尺度遑用十圉國家標準(CNS)甲4规格(210X297公釐) 裝.......................玎.....................線 {請先閲讀背面之注意事項再填窝本頁} 經濟部中央櫺準局貝工消费合作社印氧 經濟部中夬櫺準局Λ工消费合作社印製 403945 A6 B6 五、發明説明(13 ) 1的装置)。因此,附加的電流遍及整個11型半導體層13 ’可 以從裝置獲得均一的發光。在圖示的例子方面,在平面方 形的晶片的對角線上,缺口處(窗)311是在透光性P電極15 上的角落,η電極I4形成於η型半導體層I2上的角落° 黏合墊32雖與Ρ型半導體層I3達成接觸歐姆者亦可,而 與Ρ型半導體層I3的接觸歐姆,因係由Ρ電極15來達成的, 故若能與Ρ電極I5獲得電氣性的接續,以非達成接觸歐姆者 爲宜,但是,黏合墊32是以比Ρ電極15更強的Ρ型半導體層 13之連接的導電性金屬材料所形成。黏合墊32因與比Ρ電極 15更強的ρ型半導體層I3連接,故在線黏合時,使將之拉至 金線等的黏合線上,可以防止黏合墊32及/或ρ電極15的剝 離。那樣的黏合墊用金屬材料,可以列舉如單獨的鋁、或 包含鉻、鋁及金之中至少2種的金屬之金屬材料。形成黏合 墊32的金屬材料在包含2種以上的金属時’就如巳説明過的 ,這些金屬預先合金化,或將各金屬層依次層合’爲口電極 15的冶煉時,同時合金化均可。這些金屬材料雖不能與?型 半導體層13達成良好的接觸歐姆,但與Ρ型半導體層13強固 的連結,線黏合時不會脱落。因此,也可將之薄膜化至顯 現透光性。這樣的薄膜黏合墊,因讓從裝置發出的光透過 ,故不會使裝置發光量有意識的降低。而且,將黏合塾:作 多層構造,將與ρ型電極15直接接觸的層,與Ρ型半導體層 更強固的連結的材料來形成,也可將最上層與線黏合材料 連結性更佳的金屬來形成。 * * * *實驗例5 * * * * 在一個Ρ型GaN層上,將Ni-Au層合蒸镀總厚爲0.01即>, 本紙張尺 ~ ...........一.........................................................................裝......................訂.....................線 {請先聞讀背面之注意事項再填寫本頁) 403945 A6 B6 經濟部中央揉準局貝工消费合作社印製 五、發明説明(14 ) 形成1000個透光性的黏合墊。另一方面,將Cr-Al、A1-AU 、Cr-Au及單獨的A1,各別蒸鍍總厚爲Ο.ΟΙμιη,各自形成 1000個透光性的黏合墊。將金線黏合在這些黏合墊上之後 ,檢查該金線脱離之際黏合墊剝離的數目,測定合格率。 由Ni-Au所構成的黏合墊之合格率爲60%,而其他黏合墊的 合格率全部在9S%以上。 再者,由於將黏合墊加厚來形成,因其大的厚度而可 提高與p型半導體層13的連結力。厚的黏合墊雖不能顯現透 光性,但若用與P電極相同的材料來形成,可達成接觸歐姆。 圖5係將缺口處312希望切除透光性p電極15的角部來形 成以外,顳示與與圖4的装置爲同樣的裝置。還有,在圖5 之上,爲了清楚的顯示缺口處312,不將黏合墊加以表示。 圖6爲絶緣性且透明的保護膜(保護膜411)將薄的透光 性的P電極1S覆蓋著之外,顯示與圖1所示的發光裝置爲相 同的装置。保護膜是具有讓光90%以上透過的透明性。而且 ,因保護膜係屬絶緣性,線黏合時,形成在η電極14上而殘 留在底部的金屬球,即使與ρ電極15接觸也能防止兩者的電 氣性短路。而且,保護膜屬透明的,因能讓透過ρ電極的裝 置所發的光透過,不降低装置外部的量子效率(光抽出效率) 。進而,保護膜在防止對薄的ρ電極15受損的同時,也防止 在黏合墊I7 ’或ρ電極進行線黏合時,拉線而脱落。 形成保護膜的材料若爲透明且絶緣性時,雖無特殊的 限制,理想的是包含氧化矽、氧化钛、氧化鋁、氮化矽。 這些材料與膜的厚薄無關爲無色透明的,且爲絶緣性的。 因此’這些材料所形成的保護膜,透過ρ電極的光,幾乎不 {請先閲讀背面之注意事項再填寫本頁} 裝 .訂. .線. 本紙張尺度逋用t國國家揉準(CNS) T4規格(21〇x297公釐> 403945 經濟部中央橒準局貝工消费合作社印製 五、發明説明(15 ) 會使其衰滅。保護膜可利用一般的蒸鍍,或濺射技術來形 成。保護膜的厚度雖無特別的限制,通常爲〇.〇3^11'至10;11"。 再者,特別在η電極I4與黏合墊17之間的領域方面’在 線黏合時,由黏合線所形成的金屬球,使11電極14與?電極 15變成易於交聯。因此,在圖6上,保護膜411將那樣的領 域作全面性的覆蓋。 圖7中,保護膜(保護膜412)將Ρ電極15的整個露出面, 與ρ型半導體層13的露出端面及η型半導體層的露出面,加 以覆蓋之外,顯示與圖6爲同樣的構造。因此,圖7的發光 裝置的可靠性,超過圖6的裝置而更加提高。 圖8,連續的保護膜(保護膜,將與η電極14的黏合 線之黏合部分,與黏合墊I7的黏合部分扣除,幾乎將整個 晶片覆蓋以外,顯示與圖6相同的構造。這樣的’由於保護 膜也在黏合墊17的表面上形成,黏合墊I7變成受到保護膜 進一步的壓緊,可防止黏合墊17自Ρ電極15脱離。而且,因 保護膜也在η電極14上形成,故亦能防止η電極I·4自η型半導 體層12脱離。爲此一來,能提供可靠性特優的裝置。 圖9,除了 η電極14與黏合墊I7在平面方形晶片的對角 線上,形成對向的角落部位以外,顯示與圖8同樣的構造。 由於這種電極配置,可以得到圖3有關的説明之相同優點。 其次,將本發明的η電極方面加以説明。 本發明的η電極,爲包含鈦與鋁及/或金的金屬材料, 如,包含鈦與鋁的材料,包含鈦與金的材料,或包含鈦與 金、鋁的材料所形成的。這些金屬預先合金化,或各金屬 層層合的構造均可。用這些金屬材料所形成的η電極,冶煉 {請先閱讀背面之注意事項再填窝本頁) .裝 訂· ‘線. 本紙張尺度遑用中Η Β家樣準(CHS) Τ 4規格(210 X 297公釐) 鳗濟部肀央樣準局貝工消费合作社印製 403945 五、發明説明(16 ) 之後,達成與η型氮化鎵系Μ -V族化合物半導體層之良好 的接觸歐姆。 上述冶煉的溫度,以在4〇〇t:以上爲特別的理想。冶煉 是以進行〇. 〇1分至3〇分爲理想的。 一般上,氮化鎵系Π -V族化合物半導體,即使没有雜 質摻雜,因在結晶中形成氮素格子空洞,具有形成n型的性 質。在化合物半導體成長中,由於摻雜矽、鍺、涵、硫等 η型雜質,似乎成爲顯現更理想的η導電型。而且’氮化嫁 系皿-V族化合物半導體是利用有機金屬氣相成長法(MOCVD 或MOVPE)、Μ化物氣相成長法(HDCVD)、分子線晶體取向 (ΜΒΕ)般的氣相成長法,使作一般的成長。在這樣的氣相成 長法,如以三甲基鎵作爲鎵源,以氨作爲氮源,或聯目安含 氫原子的化合物,而且使用氫氣等氣體來作爲載體氣體。 含有氫原子的這些氣體,在氮化鎵系I -V族化合物半導體 的成長中,被熱分解而將氫解離,那種氢被吸入成長的半 導體中,與氮素格子空洞,或η型雜質結合,而阻礙作爲這 些授體的作用。若將η電極材料,或ρ電極材料,以400»〇以 上的溫度冶煉時,將半導體結晶中被捕捉的氣驅出,致使 結晶中的η型雜質或Ρ型雜質活性化,而結晶中的電子載體 濃度,或整體載體濃度實效性的增加,可看成達成與電極 的接觸歐姆。這種冶煉的效果,在上述持開平5_183189號 公報所記載的Ρ型雜質摻雜的氮化鎵系I -V族化合物半導 體的效果是相同的。在此公報上,Ρ型雜質摻雜的氮化嫁系 m -V族化合物半導體,是由4〇〇°c的冶煉溫度開始出發, 漸漸的降低電阻率,在7〇〇°c以上的冶煉溫度,則顯示—定 本紙張尺度遑用t國國家標準(CNS)甲4规格(210x297公釐) ...........;.........................................................................裝.......................ΤΓ.....................線 {請先閲讀背面之注意事項再填窝本頁} Α6 Β6 403945 五、發明説明(17 ) 的電阻率。在本發明的n型氣化嫁系® - V族化合物半導體 ,雖也是從4〇〇°c的冶煉出發漸漸的降低電阻率,但看不到 電阻率急劇的降低’在600。(::的冶煉’大約變爲初期電阻率 的1/2 ,超過此一溫度即使冶煉也不會降低電阻率。 對η電極的冶煉溫度,以500°c以上爲理想的’ 6〇〇°C以 上則更爲理想。η電極材料含有銘的情況’冶煉溫度在更低 的溫度就夠了,理想爲45〇°C以上,更理想爲5〇〇°C以上。 冶谏溫度的上限’與P電極的冶煉溫度的上限相同’爲未達 氮化镓系I -V族化合物半導體分解的溫度。η電極的總厚 度雖無特別限制,但通常是在5〇埃(幻以上,理想爲ο.οίμπ» 至 5jam 0 包含钛與鋁及/或金的本發明之n電極材料’是以各金 屬層的層合構造爲理想。此時,將鈦層直接接觸在η型氮化 鎵系Π -V族化合物半導體層上爲理想的。鈦因能與η型氮 化鎵系II -V族化合物半導體達成較優的接觸歐姆。此時, 鈦層是以形成2〇Α乃至0.3μιη的厚度爲理想。而且’鋁或金 層的總厚度,要比鈦層更厚爲理想。因此冶煉時,在鈦表 面遷移後所進行的線黏合時的η電極的線,或球的連結強度 之降低得以防止。 包含鈦與金、或鈦與金及鋁的本發明之η電極材料,比 由鈦及鋁所構成的η電極材料之耐氧化性較佳,與線黏合時 形成的金球更強固的連結。而且,含金的本發明之η電極材 料,最上層以金層的層合構造者爲理想的。因爲金層當然 能與金球非常的強之連結。 圖10係顳示具備本發明的η電極之雙異型構造的發光裝 紙張尺度逋用十國國家標準(CNS)甲4规格(210x297公釐) ..................................................................................裝.......................訂.....................線 (請先Η讀背面之注意事項再填寫本頁> 經濟部t央棋準局負工消费合作社印製 403945 A6 B6 經濟部中央搮準局貝工消费合作社印製 五、發明説明(18 ) 置。這種裝置,例如在藍寶石所構成的基板11上,例如介 於非摻雜GaN所構成厚度在0.002至0.5μιη的緩衝層(未示於 圖),而η型氮化鎵系Π -V族化合物半導體層51,例如形成 ΐμχη至l〇;um之厚度。 η型半導體層51上,η型氮化鎵系H -V族化合物半導體 ,例如形成由矽等的η型雜質摻雜的η型GaAIN所構成的第1 覆蓋層52。這種覆蓋層52,通常爲0.01至5μιη,理想爲具有 0.1至4μιη的厚度。 在第1覆蓋層52之上,形成由具有與覆蓋層52不同的半 導體組成的氮化鎵系Π -V族化合物半導體所構成的活性層 (發光層)53。這種活性層53爲η型或ρ型雜質,理想的爲矽 等η型雜質摻雜的低電阻率InaGa N(0<a<l)所形成的爲佳 α 1 —α 。活性層53爲10埃至0.5>ixn,理想是具有0.01至0.2pm的厚 度0 活性層53之上,形成由與活性層53不同的半導體組成 之ρ型氮化鎵系Μ -V族化合物半導體,例如鎂等ρ型雜質摻 雜的GaAIN所構成的第二覆蓋層54。第二覆蓋層54通常在 0.001;am以上,理想的是具有〇.1至ljirn的厚度。 第2覆蓋層54上,形成由ρ型氮化鎵系U -V族化合物半 導體,例如P型GaN所構成的接觸層55,其上形成ρ電極56。 P電極56可用任何適合的導電性金屬材料來形成。作爲顯現 良好的歐姆特性的P電極材料,可以給予含鎳及金的金屬材 料。鎳及金雖也可以預先合金化,而爲各金屬層的層合構 造(此時將鎳層與接觸層55直接接觸爲理想)爲特別的理想 。當然,上述各情況的本發明之透光性歐姆P電極15,進而 本紙張尺度適用t困躅家棋準(CNS)甲4規格(210X297公釐) {請先聞讀背面之注意事項再填窵本買> .裝 訂- -線. 403945 A6 B6 經濟部中央搮準局貝工消费合作社印裝 五、發明説明(19 ) 黏合墊32,可以適用於圖10的裝置。P電極56條介於金屬球 59而連結於黏合線60上。 晶片是從接觸層55往其深度方向’並到達0型半導體層 51的表面做局部性的蝕刻除去,使n型半導體層局部性的露 出。在這種η型半導體層S1的露出表面,形成本發明的η電 極5?。η電極57是介於金屬球而與黏合線相接續。 ****實驗例6**** 在直徑2吋的藍寶石基板上,形成厚摻雜砍的η型 GaN層,其表面上以ΙΟΟμιη的大小將各種η電極材料各別蒸鍍 1000個,以450°C來冶煉。測定所由用同一材料所構成的電 極間之電流-電壓特性。將結果以線A〜D表示在圖11A〜11D 。圖11A是在以鈦與鋁在〇.〇1: 1的厚度比依次層合而得的 電極,圖11B是用含钛1重量%的六1-打合金所形成的電極, 圖11C係單獨由鈦所構成的電極,圖11D是單獨由鋁所構成 的電極。這些圖雖係各別表示代表性的電流-電壓特性,而 銘及钛所形成的電極,如圖11A,圖11B所示,達成與n型 GaN層良好的接觸歐姆。而那些各別的1000個電極全部顯示 在圖11A、圖11B所示的歐姆特性。另一方面,單獨由鈦, 或單躅由鋁所構成的電極,各別示如圖11C、圖11D,都無 顯現良好的接觸歐姆,在各別的1〇〇個電極之中,顯示如圖 11A與;UB的歐姆特性者,僅不過數個而已。 進而,若將冶煉後的電極表面用顯微鏡來觀察,單獨 由鈦,或單獨由鋁所構成的電極,其表面稹的90%以上爲黑 色變質。 ****實驗例7**** (請先閲讀背面之注意事項再填寫本頁> 裝 .訂 ,線 本纸張尺度逍用t國國家棋準(CNS) T4规格(210x297公釐) A6 B6 403945 五、發明説明(20 ) 在直徑2吋的藍寶石基板上,形成〇.Sum厚度的摻雜矽 之η型Ga〇 9Al〇 /層,在其表面上,將l〇〇Mm大小的鈦與鋁 的層合構造之η電極材料,變更鈦層與鋁層的厚度比’各別 蒸鑛1〇〇〇個,在45〇°C冶煉。測定由同一材料構成的電極之 電流-電壓特性。將結果用線A〜D表示於圖UA〜12D。圖12A 〜圖12D,各別以鈦與鋁爲0.001: 1的厚度比,鋁與鈦爲 0.001: 1的厚度比,钛與鋁爲1: 0.001的厚度比、及鋁與 钛爲1: 0.001的厚度比依次層合而得的電極。這些圖明白 的顯示由鈦與鋁所構成的電極,不管其鈦與銘的含有比率 ,全都有良好的歐姆特性。還有,使鈦層直接接觸η型半導 體層的Ti-Al電極,全都顯現在圖12Α及12C所表現的良好的 歐姆特性,而使鋁直接接觸η型半導體層的Al-Ti電極,各 有整個不顯現理想的歐姆特性。而且,任何電極全都没有 變質。 ****實驗例8**** 摻雜矽的η型GaAIN層上,先蒸鍍0.03juin厚的鈦,其上 再蒸鍍0.5;am厚的鋁,最後蒸鍍0.5jam厚的金之後,將這種 層合構造以各種溫度來冶煉5分鐘。測定所得到的電極之電 流··電壓特性。將結果用線A至D表示於圖13A〜13D上。圖 1:3A爲冶煉溫度爲300°C的情形,圖1把爲冶煉溫度爲400°C 的情形,圖1:3C爲冶煉溫度爲500°C的情形,然後圖13D爲冶 煉溫度爲6〇0°C的情形。從這些圖可知,冶煉溫度爲30CTC 的情形,電極無顯示與!1型半導體層之間有良好的歐姆特性 (圖1SA),冶煉溫度在400。(:以上時,顯現良好的歐姆特性 (圖1;3B〜ISD)。而且,用鈦及鋁、金的合金來形成的n電極 本紙張尺度適用中a國家揉準(CNS)甲4规格(210x297公釐) ...............................................................................…裝........................玎...................線 一請先《讀背面之法意事項葬4寫本頁) 經濟部中央揉準局貝工消费合作社印製 經濟部中央櫺準局貝工消费合作社印製 403945 - 五、發明説明(21 ) 也可獲得同樣的結果。 ****實驗例9**** 除了在摻雜矽的η型GaN層上,蒸鍍〇.〇3jain厚的钛,並 在其上蒸鍍〇.5Mm厚的金之外,進行與實驗例8同樣的實驗 。將結果用線A〜D來表示在圖14A〜14D上。圖14A係爲300 °C的冶煉溫度的情形,圖14B係爲400°C的冶煉溫度之情形 ,圖14C係冶煉溫度爲500°C的情形,最後圖14D爲冶煉溫度 在600°C的情形。由這些圖可知,冶煉溫度在300°C時,不 顯現電極與η型半導體之間的良好歐姆特性(圖14A),冶煉 溫度在400°C以上顯示有理想的歐姆特性(圖14Β〜14D)。而 且,由鈦與金的合金所構成的η電極也可得到同樣的結果。 若將圖13Α〜13D與圖14Α〜14D做比較,如在含有鈦與 金的電極材料上再涹加鋁,在更低的冶煉溫度亦能得到顯 現理想歐姆持性的η電極。在更低的溫度能獲得理想的歐姆 特性,可以抑制因熱引起的氮化鎵系I -V族化合物半導體 的分解,以維持其結晶性之點爲特別的理想。 **** 實驗例 爲了調查η電極與金球的連結強度,而進行以下的實驗。 若參照圖15,摻雜矽的η型GaN層61上,由Α1形成的薄 膜,或將 Ti-Al、Ti-Au、Ti-Au-Al,或 Ti-Al-Au所形成的 多層膜(各多層膜係自左依次層合),各別以直徑l2〇Mm的大 小形成1000個,以500°c冶煉,形成η電極62。接著將各η電 極在空氣中放置一天以供表面氧化。然後在各η電極62上, 將金線64做球黏合。形成直徑l〇〇um的金球63。其後,球的 正側面開始用刀65,水平的方向來挖球63,球63脱落,或 本紙張尺度遑用中B國家棋準(CNS)肀4规格(210X297公*) .....................................................................................裝......................訂.....................線 (請先閱讀背面之注意事項再填窝本買> 經濟部中央標準局Λ工消费合作社印製 403945 Α6 _ Β6 五、發明説明(22 ) 不脱落而毀壞,在刀65上掛著重物,結杲顯示於表2。在表 2,各重物下的數値,表示球從電極脱落的個數,球不脱離 而受毀損者,記爲"毀損"。 表2 20克 30克 4 0克 50克 60克 70克 A1 95 5 - - - - Ti-Al 93 Ί — - - - Ti-Au-Al 0 0 6 25 69 Ti-Al-Au 0 0 0 1 5 損毀 Ti-Au 0 0 0 0 1 損毀 如表2所示,由鈦與金、或鈦、鋁與金所構成的η電極 ,比由鈦與鋁所構成的η電極,耐氧化性更佳,因此,顯示 與金球更強的連結力。而且,如係由鈦、鋁與金所構成的 η電極,比起將鋁置於最上層,不如將金置於最上層,會顯 示更強的連結力。 具有良好的歐姆特性,由鈦及鋁所構成的η電極材料層 ,爲了防止氧化所引起的與金屬球之連結力降低,在其表 面,層合比鋁有更高融點的高熔點金屬材料層也是理想的 。在那種高熔點金屬材料中,包括金、钛、鎳、白金、鎢 、鉬、鉻及/或銅。持別理想的爲金、鈦、及/或鎳。這些 材料與钛及鋁所形成的第1金屬材料層的緊密性非常的良好 ,不會與該第1材料層脱離,而且,與線黏合時所形成的金 本紙張尺度Α用t目Β家揉準(CNS) f 4规格(210X297公爱) .....................................................................................裝......................訂.....................線 {請先閲讀背面之注意事項再填窝本頁) A6 B6 403945 五、發明説明(23 ) 屬球之連結性也很好。其中,第2高熔點材料是以含金的爲 理想。特別理想的爲含金與金以外的高熔點金屬(理想的爲 钛及/或鎳)的材料。這些高熔點的材料,雖以預先合金化 也可以,但以各金屬層的層合構造者爲理想的。此時,以 金作爲最上層爲理想的巳如前述。形成這樣的層合膜之後 ,以上述條件冶煉而得η電極。第2高熔點金屬,是在下層 的金屬材料所含的鋁,防止遷移到η電極的表面,因此可以 防止銘的氧化。 圖I6係表示這樣的層合構造之η電極57。在圖16,η電 極57是由鈦及鋁的層合構造所形成的第1薄膜57a,及在其 上形成的,如層合構造的高熔點金屬材料所形成的第2薄膜 57b,兩者的組成。 **** 實驗例 11**** 在摻雜矽的η型GaN層上,蒸鍍0.03jum厚的钛,其上爲 Ο.ίμιη厚的鋁,而形成第1薄膜之後,在鋁層上依次蒸鍍0.03 Mm厚的钛、〇.〇3jam厚的鎳、及O.SjLim厚的金以外,進行與實 驗例8相同的實驗。結果以線A〜D表示於圖17A〜17D。圖17A 爲3〇〇°C的冶煉溫度的情形,圖1·7Β爲40CTC的冶煉溫度之情 形’圖17C爲5〇0亡的冶煉溫度之情形,最後圖17D爲600t: 的冶煉溫度之情形。由這些圖可知,冶煉溫度在300°C時, 電極與η型半導體之間未顯現良好的歐姆特性(圖17A),冶 煉溫度在400°C以上時,顯現出理想的歐姆特性(圖17B〜 17〇)。而且,亦發現在600°c的冶煉並無讓歐姆特性惡化。 **** 實驗例 12**** 爲了調查η電極與金球的連結強度,使用以下的表3所 本纸張尺度適用tea家棋準(CNS)f 4規格(210x297公釐) ...........;................................................................... 裝...................訂.....................線 {請先Μ婧背面之注意事項再填寫本頁) 經濟部中央橒準局S工消费合作社印製 403945 A6 B6 五、發明説明(24 ) 列之電極材料,進行與實驗例10同樣的實驗。結果併記於 表3。 表3 20克 30克 40克 50克 60克 70克 Ti-Al 93 7 - - 一 一 Ti-Al-Au 0 0 0 1 5 損毀 Ti-Al-Ti-Au 0 0 0 0 0 損毀 Ti-Al-Ni-Au 0 0 0 0 0 損毀 Ti-Al-Ti-Ni- •Au 0 0 0 0 0 損毀 經濟部中央橒準局貝工消费合作社印製 從表3可知,高熔點金屬材料,使鈦及鋁所構成的金屬 材料提高耐氧化性,並使與球的連結性提高。 而且,以上説明的本發明之η電極,適用於圖1,及圖 3至圖9的裝置之η電極14,自然能使這此裝置的特性提高。 以下記載本發明的實施例。 =====實施例 1==== 在藍寶石基板上,由非摻雜的GaN所構成的緩衝層(厚 度爲0.〇2Win)、摻雜矽的η型GaN層(厚度爲4Λ1ΙΠ)、及摻雜鎂 的p型GaN層(厚度爲ijam),依次層合而成的直徑2吋的晶片 加以準備好,接著,希望露出η型GaN層的η電極形成部的將 ρ型GaN層加以蝕刻除去。 接下來,將露出的η型GaN層部分罩上之後,將p型GaN 層全面的蒸鍍0,03jura厚的鎳,其上爲0.07juin厚的金,隨後 本纸張尺度ϋ用t a s家料哪)τ 4祕m〇x297公;aT) ..........\..........................................................................^.......................-ΪΓ.....................線: {請先Μ讀背面之注意事項再填寫本頁) 403945 A6 B6 經濟部中央揉单局貝工消费合作社印製 五、發明説明(25 ) 罩上這種蒸鍍膜,在η型GaN層的露出表面部分蒸鍍鋁。 然後,將所得到的晶片以5〇o°C給予冶煉10分鐘。冶煉 後的P電極厚度爲0.07JLHII,顯現透光性。 將這種晶片切去35〇jum角晶方,一個晶方如圖1所示的 装置在帽狀的鉛框,進行所定的線黏合而製作發光的二極 管。這種二極管的發光輸出爲2〇rnA及80UW,順方向電墼爲 4V 〇 而且,從2吋的晶片切去的晶方數目,大約爲16000個 ,從這些晶方得到的發光二極管,除去接觸不良品之後的 合格率在95%以上。 因此,使用從實施例1得到的晶片,與原來同樣的要使 P電極及η電極個別與鉛框直接接觸(將藍賨石基板在上)來 配置晶方時,晶方的規格最小也需lrnn角。要使這種lmm角 的晶方跨在二個鉛框上來裝置,進行所需的電極接續來製 作二極管。這種發光二極管在2〇祕的發光輸出爲4〇uw,巳 知横向的發光是無法充分的抽出。而且,從2吋的晶片切斷 的晶方之數目不超過2〇〇〇個,由這些晶方所得到的二極管 除去接觸不良品之後的合格率僅爲6〇%。 如此,若按照本發明,P型半導體層的電極,是由能達 成歐姆接觸的金屬所構成,且係爲透光性者,能提供容許 從氮化鎵系化合物半導體方面做發光觀寮的發光裝置’因 此可以確認,不會使發光装翯的外部量子效率(光抽出效率) 降低,可以有效率的將發光抽出。而且’根據本發明’可 將1晶方規格減小,生產性也格外的提高,能確認可以做到 合格率的提高與生產成本的降低。 }纸張尺度遶taa冢》準(CNS)f4«^_X297公龙) ~ t請先《讀背面之注意事項再填寫本頁) .裝 訂.. .線. A6 B6 403945 五、發明説明(26 ) =====實施例 2==== 在600Ό進行冶煉以外,以實施例1的順序來進行。所 獲得的Ρ型電極與實施例1幾乎有相同的厚度,顯現同樣的 透光性。而且,製作的發光二極管,顯現與實施例1幾乎相 同的發光输出、順向電壓,而且合格率也大致相同。 =====實施例 3==== 在ρ型GaN層上,蒸鍍O.Sjum的路、0.5;um厚的錬之外’ 進行實施例1的順序。所獲得的P型電極有Ο·7#"1的厚度,顯 現樣的透光性。而且,製作的發光二極管,顯現與實施例1 大致相同的發光輸出,順向電壓,而且合格率也大致相同。 =====實施例 4==== 在ρ型GaN層上,依次蒸鍍0. Olwm厚的白金、0.1ΜΠ»厚的 鈦之外,按實施例1的順序進行。所得到的P型電極有〇.07 的厚度,顳現同樣的透光性。而且,製作的發光二極管 與實例1大致相同的發光輸出,順向電壓,而且合格率也大 致相同。 =====實施例 5==== 在直徑2吋的藍寶石基板上,依次層合GaN緩衝層、摻 雜矽的η型GaN層、摻雜矽的GaAIN覆蓋層、摻雜鋅與矽的 InGaN活性層、摻雜鎂的GaAlN覆蓋層、及摻雜鎂的p型GaN 接觸層,而作成雙異型構造的晶片。 接著,要使1晶方具有圖1〇所示的構造,實施蝕刻,而 使η型GaN層局部性的露出。使用所定的光罩,在各露出η型 GaN層上蒸鍍10〇λ的鈦,其上爲0.5Mm厚的金,而形成直徑 lOOjum的多層膜。 本紙張尺度逋用令國國家標毕(CNS)T4规格(210X297公*) .....................................................................................裝......................訂.....................線. t請先閲讀背面之注意事項再填窝本頁一 經濟部中央樣準局貝工消费合作社印製 403945 經濟部中央樣準扃負工消费合作社印製 五、發明説明(27 ) 將所得到的晶片在氪氣寵罩之下以600°C冶煉5分鐘, 鞋化多層膜爲η電極。晶片探測器測定n電極間的電流-電壓 特性時,顳示圖12D所示的歐姆特性。 接著,在P型接觸層上利用常法形成p電極之後,將晶 片切斷成晶方。如此,從2吋的晶片得到15000個晶方。 將各晶方偶黏合設置在鉛框上,利用球聯接器將金線 接續在P及η電極上。isooo個晶方之中,在球聯接器中,没 有從球與η電極脱落的。而且黏合後,任意抽出2〇個晶方, 拉著各自的金線,全部在球從η電極脱落之前,拉斷了金線。 =====實施例 6==== η電極材料’除了蒸渡10〇λ的纺,其上爲〇.4μιη厚的銘 之外,與實施例5同樣的,得到15000個的發光晶方。利用 晶片探測器對全部的η電極之電流-電堅特定的測定,爲圖 11Α所示的特定。而且,1S000個晶方之中,在球黏合中没 有從球與η電極脱落的。而且黏合後,任意抽出20個晶方, 各別拉著金線,全部在球從η電極脱落之前,拉斷了金線。 =====實施例 7==== η電極材料,除了蒸鍍0.5jim厚的含1%钛的Ti-Al合金之 夕I*,與實施例5同樣,得到15000個發光晶方。利用晶片探 測器測定所有的η電極的電流-電壓特性,爲圖11B所示的特 性。而且,15000個晶方之中,在球黏合中没有從球與η電 極脱落者。而且黏合後,任意抽出2〇個蕊片,各別拉著金 線,全部在球從η電極脱落之前,拉斷金線。 =====實施例 8==== 將實施例5的發光晶方在Ρ電極與η電極之處與2個鉛框 .....................................................................................裝.......................玎.....................線 (請先閱讀背面之注意事項再填窝本頁) 本紙張尺度遑用中國國家標準(CNS)甲4规格(210X297公釐) 403945 A6 B6 經濟部中央揉準局工消费合作社印製 五、發明説明(28 ) 連結,此時的P電極與η電極,各別介於絪黏接劑而連結。 連結後,拉著與η電極相接續的鉛框時,在銦與鉛框的異面 發光脱落。 這個實施例,本發明的η電極,使用焊錫、絪、金合金 等的一般的黏接劑而直接與鉛框強固的連結。 =====實施例 9==== η電極材料,蒸鍍ΙΟΟΑ厚度的钛,其上爲ο.ίμιη厚度的 鋁,而形成第1薄膜,進而其上的第2薄膜,形成Ο.ίμιη厚度 的鈦,及O.ljum厚度的鎳之外,與實施例5同樣,獲得15000 個發光晶方。利用晶片探測器測定的所有的η電極之電流-電壓特性,爲圖1I3D所示的特性。而且,ι5〇〇〇個晶方之中 ,在球黏合之中,没有從球與η電極脱落者。而且,黏合後 ,任意抽出2〇晶方,各別拉著金線,所有的球在從„電極脱 落之前,拉斷金線。 =====實施例 10==== η電極材料的第2薄膜,蒸鍍〇 . 1μιη厚度的钛及〇. 4;^厚 度的金之外,與實施例9同樣的,而得到15000個發光晶方 。利用晶片探測器測定所有的η電極之電流-電墼特性,爲 圖14D所示的時性。而且,1S000個晶方之中,在球黏合之 中,没有從球與η電極脱落者。而且,黏合後,任意抽出2〇 個晶方,各自拉著金線,全部的球在從„電極脱落之前,拉 斷金線。 ====實施例 11==== η電極材料的第2薄膜,蒸鍍〇.1μιη厚度的钛、 的鉻、及0·4μιη厚度的金之外,與實施例9同樣,而獲得 {請先閲讀背面之注意事項再填寫本頁) .裝 -訂. .線 本紙張尺度逋用十鼸國家樣準(CNS)曱4规格(210x297公爱) A6 B6 403Θ45 五、發明説明(29 ) 15000個發光晶方。利用晶片探測器測定所有的η電極的電 流-電堅特性,給予圖13C或圖1:3D所示的特性。而且’ 15000 個晶方之中,在球黏合之中,没有從球與η電極脱落者。而 且,黏合後,任意抽出20個晶方,拉著各別的金線’全部 的球在從η電極脱落之前,拉斷金線。 =====實施例 12==== 將實施例9的發光晶方,在Ρ電極與η電極之處’與2個 鉛框連結。此時,Ρ電極及η電極,各別介於絪黏接劑而連 結。連結後,拉著與η電極相接續的鉛框時,在絪與錯框的 界面發生脱落。 以上,雖將本發明參照具體的情況加以説明’而本發 明不應限定於這些。各倩況在適切的情況下,也能適用於 其他情況。而且,如本發明,加上Ρ-η同型接合,或Ρ-η雙 異型接合的氮化鎵系Μ -V族化合物半導體發光裝置,也能 適用於p-n單異型接合的氮化鎵系Μ -V族化合物半導體發 光裝置。而且,本發明不只是發光二極管,也適用於發光 雷射二極管等的其他的發光裝置,進而太陽電池、光二極 管等對600rm以下的波長具有感度的受光裝置。進而,本發 明主要是提供對氮化鎵系-V族化合物半導體有良好歐姆 接觸的電極材料,因此,本發明也能適用基板上具有P型氮 化鎵系II -V族化合物半導體層及/或η型氮化鎵系Μ -V族化 合物半導體層的任何半導體装置,其基板不限於藍寶石等 的絶緣性基板,可以使用碳化矽、矽、氧化鋅、砷化嫁、 磷化鎵等的半導體基板。 本纸張尺度遑用中國國家櫺準(CNS)肀4规格(210X297公*) ................................................................................ 裝......................訂.....................線 (請先閩讀背面之注意事項再填窝本頁> 經濟部中央搮準局ΛΧ消费合作社印製 第83103775號專利申請案 中文說明書修正頁(90年3月)(Make-up "« Notes on the back side * Matters and then fill in this page J. Binding. ¾ Ministry of Economic Affairs »Zhunji only eliminates f cooperative printing ft paper method again 3« quasi (CNS > T 4 specifications (210χ 297 male 403945 V. Description of the invention (2) The plutonium, which adds a predetermined current to achieve its light-emitting function, is directly mounted on the substrate itself. Both the P electrode and the n-electron must be directly connected to the pin. The compound semiconductor layer and the n-type compound semiconductor layer are formed on the p-type electrode. The ρ electrode ensures that a uniform current is applied to the P-type compound semiconductor, and in order to obtain uniform light emission from the device, the P-type layer is almost comprehensive. However, in the past, the P electrode was non-translucent, and the light emission of the past light-emitting device. In order to avoid the deterioration of the efficiency of the external electrons caused by the decrease in the light emission of the PS electrode, it was not possible to use the PS compound semiconductor layer and the Observe the opposite direction of the substrate formed by the compound semiconductor. Therefore, if the conventional compound semiconductor light-emitting device is fixed in a lead frame, the substrate surface of the compound semiconductor layer is not directed upward. The P pen electrode and the η electrode are below, and must be carried by a lead frame. That is, a storage semiconductor thin film must be carried across the lead frame. At this time, in order to avoid the P-type compound semiconductor layer The electrical short circuit with the n-type compound semiconductor layer must ensure a certain degree of space between the difluoride lead frame, and the size of the monocrystalline square of the natural semiconductor must also be enlarged to about 1 mm2. Therefore, in In the conventional device structure, the number of wafers obtained by an M wafer (Wafer) will inevitably be reduced. Moreover, the positions of the two lead frames are very closely matched, and the delicate etching of the gallium nitride semiconductor is performed. (Etching) technology is also necessary. For the consumer consumer cooperatives of the Provincial Bureau of Occupation and Procurement Bureau, "quote ~; f first '"? F Note on the back and then write too many pages) The second line, although there is Nig pole, and just like the above, it seems that the P-η junction type nitride compound IV compound semiconducting fluorene light-emitting device can be realized, but it is recently clear that in the light-emitting device of the MIS type structure encountered, because Xiao Yingji's Obstacles Using Electrically Resistant i-layers with High Resistivity short-key-barrier >, η® is hardly noticed. The conventional MIS structure nitrided strip H-V group compound semiconducting 靥 shiny paper size meets / H ugly 孓 standard iiUXSj A4 specifications ι210χ · 297 public loan 403945 A6 B6_ 5. Description of the invention (3) The η electrode material of the device, as shown in JP 5S_9442, is aluminum or its alloy. Moreover, indium is often used. However, aluminum and Indium is rare to have sufficient contact ohms with the n-type gallium nitride-based] j -V group compound semiconductor layer, and it has also been found that the conductivity is easily lost due to the deterioration of the electrode due to anneal. In short, an electrode material jitter capable of sufficiently satisfying the contact ohms with a gallium nitride-based I-V compound semiconductor has not been achieved in the past. **** Abstract of the Invention **** Accordingly, an object of the present invention is to provide a gallium nitride-based M-V compound semiconductor light-emitting device having a contact ohmic with a gallium nitride-based I-V compound semiconductor layer, and Its manufacturing method. Another object of the present invention is to provide a gallium nitride-based E-V compound semiconductor light-emitting device including a P electrode capable of observing light emission of a light-emitting device from a gallium nitride-based I-V compound semiconductor layer formed on a substrate, and Its manufacturing method. Another object of the present invention is to provide a gallium nitride I-V group compound semiconductor light-emitting device that achieves an n-electrode having good contact ohms with an n-type gallium nitride-based I-V group compound semiconductor layer and a method for manufacturing the same. A first feature of the present invention is: a substrate A semiconductor layered structure formed on the substrate and comprising an n-type gallium nitride-based I-V compound semiconductor layer and a p-type gallium nitride-based H-V compound semiconductor layer. A first electrode formed by being connected to the n-type semiconductor layer and a light-transmitting second electrode including a metal material by being connected to the p-type semiconductor layer. This paper is applicable to China National Standard (CNS) f 4 specifications. (210X297 male; '............................. ....................................... ........ order .............. line < Please read the notes on the back before filling in this page} Printed by the Central Economic and Technical Cooperation Bureau of the Ministry of Economic Affairs ΛΗConsumer Cooperative Cooperative Printed by the Central Economic and Social Service Administration of the Ministry of Economic Affairs Printed by the Consumer Cooperatives A64 »Tear 5--2S ___ 5. Description of the Invention (4) A gallium nitride-based group M-V compound semiconductor device including these two electrodes. The above-mentioned second electrode (P electrode) is formed by connecting a metal material layer to a p-type semiconductor layer and smelting the metal material layer, so that the metal material layer is light-transmissive and can be formed to reach the P-type semiconductor layer. Contact ohms. A second feature of the present invention is that: a semiconductor layered structure including an n-type gasification graft II-V group compound semiconductor layer and a p-type gallium nitride-based] I-V group compound semiconductor layer is provided on the substrate, and the η is connected And a second electrode formed by connecting the p-type semiconductor layer with a titanium-type semiconductor layer and gold, and a second electrode formed by connecting to the p-type semiconductor layer] II-V group compound semiconductor Luminescent device. The first electrode (η electrode) is formed by connecting an alloy layer containing titanium, aluminum, or gold, or a multilayer structure containing a titanium layer and aluminum or gold, to an n-type semiconductor layer, and smelting it. An ohmic contact with the n-type semiconductor layer is formed. A third feature of the present invention is: a substrate. A semiconductor laminated structure including an n-type gallium nitride-based I-V compound semiconductor layer and a p-type gallium nitride-based I-V compound semiconductor layer formed on the substrate. A first electrode including titanium, aluminum, or gold formed by connecting the n-type semiconductor layer, and a light-transmitting second electrode including a metal material formed by connecting the p-type semiconductor, and a gallium nitride system including the two electrodes is provided. Group II-V compound semiconductor device. The fourth feature of the present invention is: '' The gallium nitride-based M-V compound semiconductor layer formed on the substrate, ^ Paper size: National Standard (CNS) A4 specification (210X297 mm) (Please read first Note on the back, please fill in the nest page). Binding. Thread A6 B6 408945 5. Description of the invention (5) < Please read the precautions on the back before filling in this page) and it is formed by connecting to the semiconductor layer. The electrode containing metal material is smelted to achieve ohmic contact with the semiconductor layer. Nitriding with both is provided. Gallium-based Π-V compound semiconductor device. **** Brief Description of Drawings **** FIG. 1 is a schematic cross-sectional view showing a state where a lead frame of a light emitting device according to a first aspect of the present invention is mounted. Fig. 2 is a graph showing the current-shock characteristics of the p-electrode of the present invention (1 scale on the X axis is 0.5 V, and 1 scale on the Y axis is 0.2 mA). 3 is a plan view of a light emitting device according to a second aspect of the present invention. FIG. 4 is a sectional view taken along the line IV-IV in FIG. 3. Figure 5 is a perspective view of a modification of the second aspect of the present invention. Fig. 6 is a sectional view of a light emitting device according to a third aspect of the present invention. Fig. 7 is a cross-sectional view of a first modification of the third aspect of the present invention. Fig. 8 is a sectional view of a second modification of the third aspect of the present invention. Fig. 9 is a plan view of a third modification of the third aspect of the present invention. Line 10 is a cross-sectional view of a semiconductor light emitting device according to a fourth aspect of the present invention. 11A to 11D are graphs showing the current-voltage characteristics of different η electrodes of the present invention at the same time as the comparative example (1 scale on the X-axis of each figure is 0.5 V ^ 1 scale on the y-axis is 50 Pa). 12A to 12D are current-voltage characteristics of different η electrodes other than the present invention, and are shown at the same time as the comparative example (1 scale on the X axis of each figure is 0.5V) , 1 scale of the Υ axis is 50 Qiu). 13A to 13D are diagrams showing current-voltage characteristics of different η electrodes of the present invention at the same time as the comparative example (1 scale of each figure is 0.5 V, and 1 scale of the y-axis is 50; ua). This paper size is applicable to China National Standard (CNS) T4 (210x297 mm) 403945 Printed by the Central Government of the Ministry of Economics and printed by Shellfish Consumer Cooperatives A6 B6_ 5. Description of the invention (6) Figure 14 A to Figure 14 The current-voltage holding characteristics of different η electrodes outside the invention are shown at the same time as the comparative examples (the X-axis 1 scale of each figure is 0.5 V, and the y-axis 1 scale is 50; ua). FIG. 15 is a diagram illustrating the adhesion test of the η electrode. Fig. I6 is a partial sectional view of a semiconductor light emitting device according to a fifth aspect of the present invention. The current-voltage characteristics of the different η electrodes of the fifth aspect of the invention are shown simultaneously with ft parameter Λ (the X-axis 1 scale in each figure is 0.1 SV, and the 1-axis scale is 50 jua). **** Detailed description of specific embodiments **** The so-called gallium nitride-based Group IV compound semiconductor in the present invention is a nitride semiconductor containing Group I elements of the periodic table such as GaN, GaAIN, InGaN, and nAlGaN. meaning. These compound semiconductors can be represented by the formula In A1 Ga N, where xS 1, 1, x + y Yun 1 0 x y 1-x-y, and the so-called contact ohms in the present invention are generally used in the semiconductor field. The light-transmitting property of the electrode in the present invention means that the light emitted from the gallium nitride-based H-V group compound semiconductor light-emitting device transmits at least 1%, and is not necessarily colorless and transparent. The light-transmitting electrode is generally a light emitted from a gallium nitride-based] I-V group compound semiconductor light-emitting device such that 20 to 40% or more of the light is transmitted. In addition, if the metal material of the present invention contains two or more kinds of metals, two or more kinds of metals may be alloyed in advance, or each metal layer may be laminated. When the metal material contains two or more metals, although the ratio of these metals is not particularly limited, each metal preferably contains at least 0.1 atomic%. {Please read the notes on the back before filling this page.) This paper size is applicable to China National Standards (CNS) A4 specifications (210X297) * 403945 Α6 Β6 Printed by the Ministry of Economic Affairs, Central Government Standards Bureau, Beiya Consumer Cooperatives. DESCRIPTION OF THE INVENTION (7) Hereinafter, the present invention will be described in detail with reference to the drawings. Throughout the figure, the same place is represented by the same symbol. FIG. 1 is a schematic display of a gallium nitride-based group I-V compound semiconductor light-emitting device 10 according to a first aspect of the present invention. This light emitting device (LED) 10 is a transparent and insulating substrate 11 having sapphire or the like. The n-type gallium nitride-based M-V group compound semiconductor layer 12 covering the entire main surface 11a of one side of the substrate 11 is formed with a thickness of 0.5 to 10 μm. Although the n-type semiconductor layer I2 is preferably not doped with impurities, it is preferably doped with n-type impurities such as silicon, germanium, culvert, sulfur, tellurium, and the like. The surface of the n-type semiconductor layer 12 is formed by a thickness of p-type gallium nitride-based] H-V group compound semiconductor layer I3 from 0.01 μxη to Sjam. The p-type semiconductor layer I · 3 is doped with p-type impurities such as zinc, magnesium, beryllium, ytterbium, and barium, and is tempered at a temperature of ¢ 400 ° or higher (for the tempering, refer to Hirakai Hei 5-183189). The P-type semiconductor layer 13 is locally etched and removed simultaneously with the surface layer of the n-type semiconductor 12, so that the surface of the n-type semiconductor layer 12 is partially exposed. An n-electrode 14 is formed on the exposed surface of the n-type semiconductor layer 12. The P electrode 1S of the present invention is formed by substantially covering the entire p-type semiconductor. The P electrode 1S is a light-transmitting ohmic electrode made of a metal material. The metal material forming the ρ electrode 1S is not particularly limited. For example, the P electrode material is made of one or more metals selected from gold, nickel, platinum, aluminum, tin, indium, chromium, and titanium. The metal material that can achieve the ideal contact ohms contains at least two metals from the group consisting of chromium, nickel, gold, titanium and platinum. A particularly desirable material for the golden dam is to contain gold and nickel. Gold and nickel are nickel layers which directly contact the P-type semiconductor layer 13, and it is desirable to be able to form a metal thereon. As mentioned above, when the metal material contains more than two kinds of metals, they are not allowed to use the national paper standard (CNS) A4 in the paper standard (21〇 parent 297 gold) (Please read the precautions on the back before filling in (This page). Binding and binding. Printed by the Central Bureau of Standards and Quarantine of the Ministry of Economic Affairs and printed by Shellfish Consumer Cooperative Co., Ltd. 403945. 5. Description of the invention (8) Laminated structure with various metal layers or pre-alloying is good. The metallic material having a laminated structure is alloyed by refining as described later. The P electrode 15 is formed by forming a metal material layer on the p-type semiconductor layer 13 by using a common coating technique such as evaporation and sputtering, and then smelting the metal material layer. Smelting is ideally carried out at a temperature above 400 ° C. In the case of smelting at a temperature of less than 400 ° C, it has been shown that the metal material layer and the p-type semiconductor layer 13 are difficult to form a sufficient contact ohm. Smelting is performed at a temperature lower than the decomposition temperature of the gallium nitride-based Group I-V compound semiconductor (about 120 (TC)), and the refining time is preferably from 0.01 to 30 minutes. The effect of this refining is similar to The effect described in the above-mentioned Japanese Patent Application No. 5_183189 is the same. That is, when grown by a vapor phase growth method, a gallium nitride-based I-V compound semiconductor layer containing p-type impurities is smelted at a temperature of 4,000 ° C or higher. As a result, the resistivity decreases sharply. Hydrogen atoms bound to the acceptor in the semiconductor crystal are driven out by smelting, so the impurity of the acceptor is activated. Therefore, the electrode is used at a temperature above 400 ° C. Smelting effectively increases the carrier concentration of the gallium nitride M-V group compound semiconductor doped with P-type impurities into accessible contact ohms. The ideal material for contact ohms on this p-type semiconductor layer 13 is transparent. It does not matter whether or not there is lightness. It is a metal material containing gold and nickel. The metal material used in the P electrode 1S is preferably formed to a thickness of 0.001 μm to 1 Mm after smelting. Due to the smelting, the metal material layer Spread to P-type half At the same time as the inside of the body layer I3, a part of it is scattered to the outside to make the thickness thinner. The thickness of the metal material layer can be adjusted by using the desired final thickness of 0.00lwm to ίμη after smelting, so that the ρ electrode 15 can have ideal light transmission Even if the thickness is exceeded, it will not be a big problem, but for this reason, the electrode will be printed on a paper-by-paper basis (《Η Η 上 家 样 准 (CNS) A4 size (210x297 mm) ......... ........................................ ................................................玎 .............. line (Please read the notes on the back before filling out this page) 403945 A6 B6 Printed by the company V. Description of the invention (9) Increasingly, it tends to have a metallic color and reduce the light transmittance. The thickness of the P electrode 15 is preferably as thin as possible from the viewpoint of light transmittance within the above range. However, if it is too thin, the contact resistance between the electrode 15 and the p-type semiconductor layer 13 tends to increase. For this reason, the thickness of the ytterbium electrode 15 is preferably 0.005 to 0.2 and ^, particularly preferably 0.01 to 0.2 μm. The P electrode of the present invention is light-transmissive, and achieves an ideal contact ohm with a P-type semiconductor. The electric rigidity of the light-emitting device is reduced in the forward direction, and the light-emitting efficiency of the device is improved. **** Experimental example 1 **** On the zinc-doped p-type GaN layer, the nickel layer and the upper gold layer were sequentially individually vapor-deposited to a thickness of 0.1 μm, smelted at 600 ° C, and these alloyed At the same time, it became transparent to obtain a P electrode, and its thickness was 0.03 jum. The current-voltage characteristics of this p-electrode are shown by line A in Fig. 2. From this figure, it can be seen that the P electrode and the P-type GaN-based I-V achieve a good contact ohmic with the compound semiconductor. As described above, the light-emitting device 10 of the present invention including the transmissive ohmic P electrode 15 can observe light emission through the p-electrode 15. Therefore, as shown in FIG. 1, as a means of a light-emitting device using a semiconductor other than a gallium nitride-based compound semiconductor, a substrate U without a semiconductor layer on the bottom surface of a generally used cap-shaped lead frame I8, that is, the first The 1 main surface 11 a and the second main surface lib opposite to the main surface 11 a may be placed facing the lead frame 18. The P electrode 15 has a bonding pad I7 formed on a part thereof, and is connected to a gold wire-like bonding wire 21 connected to other lead frames (metal pillars) 19. The electrode 14 is gold-like. The bonding wire 20 is connected to the cap-shaped lead frame I8. In the ideal case of the present invention, the bonding pad 17 is ideally a metal material formed of gold or gold with an inscription alone, or two or more metals containing no chromium. The paper scale is quickly used in China National Standard (CNS) A4. Specifications (210X297mm) " " " " (Please read the precautions on the back before filling in this page) Binding and binding., -Line. A6 B6 403945 V. Description of the invention (10) (Please read first Note on the back, please fill out this page again) Metal materials containing aluminum or gold without chromium, such as gold, titanium, nickel, indium and / or platinum-containing materials. The bonding pad made of such a metal material has good connection with the P electrode 13, and gold wire and wire are bonded, and sometimes it has good connection with a ball formed of gold wire. Furthermore, such a metal material hardly migrates to the P electrode during smelting or is energized to the device to emit light, thereby deteriorating the P electrode (decreasing light transmittance). Metal materials containing aluminum or chromium may migrate to the p-electrode for a relatively short period of time (such as 500 hours) during power-on, which will deteriorate it. **** Experimental example 2 **** Using a sapphire substrate as the substrate 11, an n-type GaN layer having a thickness of 4Λ1ΠI as an n-type semiconductor layer, and a magnesium-doped p-type GaN layer having a thickness of ljuiu as a p-type semiconductor layer, An adhesive pad composed of various metal materials is formed on the P electrode 15 of the device shown in FIG. 1. The P electrode 15 is obtained by vapor-depositing a nickel layer and a gold layer to a thickness of 0,1 μm, and smelting them at 600 ° C to alloy and make those metals transparent, thereby obtaining a thickness of 0.05 wm. More specifically, an adhesive pad was formed on the P electrode from the adhesive pad material shown in Table 1 below. That is, the bonding pad is formed by directly depositing the metal layer shown in the column of Table 1 on the P electrode, and the metal layer shown in the row of Table 1 is vapor-deposited, and is simultaneously formed during the smelting of the P electrode. The bond line is gold. The light-emitting device thus obtained was allowed to emit light continuously for 500 hours to investigate the effect of the bonding pad on the P electrode. The results are described in Table 1. The paper size printed by the Central Bureau of Standards, the Ministry of Economic Affairs, Shellfish Consumer Cooperative, is applicable to the specifications of the National Standards (CNS) A4 (210X297 mm) 403945 A6 B6 V. Description of the invention (11) Table 1 Gold-nickel titanium titanium I white aluminum Chrome gold is very good good good bad bad bad nickel is good----bad-titanium good one---bad-marriage good one----bad-platinum good one---bad bad aluminum bad bad bad bad bad Chrome bad---one bad- < Please read the meanings on the back of the page before writing this page). The "quote" in Table 1 printed by the Central Bureau of the Ministry of Economic Affairs and the Shellfish Consumer Cooperatives printed on the table is "good" even after 500 hours of light , The adhesive pad is completely unchanged, but still maintains the initial light transmission, and shows that the ohmic characteristics of the contact between the P electrode and the P-type semiconductor layer have not changed; " Good " Slight discoloration, but does not cause conscious attenuation of light emission, and the contact ohmic characteristics of the P electrode and the P-type semiconductor layer show no change; " bad " refers to the loss of light transmission of the P electrode, and It shows the loss of the contact ohmic characteristics of the P electrode and the P-type semiconductor layer; it means that it has nothing to do with the discoloration of the P electrode, the connection with the gold ball is poor, and the wire bonding is a difficult bonding pad. As shown in Table 1, when Ni-Au is used to form the P electrode, if the same material as the p-electrode material, that is, Ni-Au is used to form the bonding pad, the p-electrode does not change color at all and still maintains light transmission. Moreover, the same results can be obtained when using gold alone to form the bonding pad. However, both chromium and aluminum are very easy to migrate to the P electrode. The size of the paper used in the book is based on the Chinese National Standard (CNS) A4 specification (210x297 mm) A6 B6 403945 5. Description of the invention (12) The inclusion of gold also deteriorates the characteristics of the P electrode. **** Experimental Example 3 **** The same experiment as Experimental Example 2 was performed except that the p-electrode was formed of Au-Ti (the ohmic characteristics of this p-electrode are slightly inferior to those of the Ni-AU electrode). As a result, the case of using gold or Au-Ti alone to form the bonding pad is " very good ", a metal material composed of gold and aluminum, or a metal other than chromium (ie, nickel, titanium, indium, or platinum) The formation is "good", and the metal material composed of gold and aluminum, or chromium is formed, and the result of "bad" is obtained. **** Experimental Example 4 **** The same experiment as Experimental Example 2 was performed except that the p-electrode was formed using AU-A1 (the ohmic characteristics of this p-electrode are slightly inferior to those of the Ni-AU electrode). As a result, π is very good when forming the bonding pad with gold alone. "It is good to form a metal material composed of gold and aluminum, or a metal other than chromium (ie, nickel, titanium, hafnium, or platinum)." "In the case of using a metal material composed of gold and aluminum to form the bonding pad, the same material as that of the P electrode is the" bad "result. Moreover, the case of a metal material composed of gold and chromium is also a result of "defect". Fig. 3 is a plan view of a semiconductor light emitting device according to a second aspect of the present invention, and Fig. 4 is a view taken along line IV-IV of Fig. 3 Sectional view. This situation is particularly related to the improvement of the bonding pad for the p electrode. As shown in these figures, a notch 311 is provided on the transparent P electrode 15 to expose a part of the surface of the P-type semiconductor layer 13. The pad 32 is electrically connected to the P electrode while being strongly connected to the p-type semiconductor layer 13 through this notch 311. In the situation shown in the figure, the adhesive pad 32 is not only buried in the notch 311, but extends to surround it. The surface of the P electrode on the notch 311. The notch 311, along with the bonding pad 32, is preferably located at the farthest position from the n electrode 14 disposed on the n-type semiconductor layer 12. (This one conforms to the paper size of the drawing.圉 National Standard (CNS) A4 Specification (210X297mm) Packing ............ 玎 ............ .......... line {Please read the precautions on the back before filling in this page} Printed by 夬 棂 工 Λ 工 工 消费 工 合作社 社 403403 A6 B6 V. Device Description (13) 1). Therefore, the additional current throughout the type 11 semiconductor layer 13 'can obtain uniform light emission from the device. For example, on the diagonal of a planar square wafer, the notch (window) 311 is a corner on the light-transmitting P electrode 15, and the n-electrode I4 is formed on the corner on the n-type semiconductor layer I2. It is also possible for the P-type semiconductor layer I3 to reach a contact ohm, and the contact ohmic with the P-type semiconductor layer I3 is achieved by the P electrode 15, so if an electrical connection can be obtained with the P electrode I5 to achieve non-contact Ohm is preferable, but the bonding pad 32 is formed of a conductive metal material connected to the P-type semiconductor layer 13 which is stronger than the P electrode 15. The bonding pad 32 is due to a stronger p-type semiconductor layer than the P electrode 15 I3 is connected, so when the wire is bonded, pulling it to a bonding wire such as a gold wire can prevent peeling of the bonding pad 32 and / or the ρ electrode 15. Examples of such a metal material for the bonding pad include aluminum alone, or Contains chromium, aluminum, and gold A metal material of at least two kinds of metals. When the metal material forming the bonding pad 32 contains more than two kinds of metals, 'as explained in the above, these metals are pre-alloyed, or the metal layers are sequentially laminated' as a mouth It can be alloyed at the same time when the electrode 15 is smelted. Although these metal materials cannot achieve good contact ohms with the? -Type semiconductor layer 13, they are strongly connected to the P-type semiconductor layer 13 and will not fall off when the wires are bonded. It can be made into a thin film to show translucency. Such a thin-film adhesive pad does not consciously reduce the light emission of the device because it transmits light emitted from the device. In addition, the adhesive layer is made of a multi-layer structure, a layer that is in direct contact with the p-type electrode 15 and a material that is more strongly connected to the p-type semiconductor layer, and a metal with a better connection between the uppermost layer and the wire adhesive material. To form. * * * * Experimental Example 5 * * * * On a P-type GaN layer, the total thickness of Ni-Au layer vapor deposition is 0.01, that is, > this paper rule ~ ........... One................................................. .............................................. Order .. ......... line (please read the precautions on the back before filling out this page) 403945 A6 B6 Printed by the Central Labor Bureau of the Ministry of Economic Affairs Explanation of the invention (14) 1000 light-transmitting adhesive pads are formed. On the other hand, Cr-Al, A1-AU, Cr-Au, and A1 alone were separately vapor-deposited to a total thickness of 0.01 μm, each forming 1,000 light-transmitting adhesive pads. After the gold wire is bonded to these bonding pads, the number of peeling of the bonding pad when the gold wire is detached is checked, and the pass rate is measured. The pass rate of the bonding pads made of Ni-Au is 60%, while the pass rates of other bonding pads are all above 9S%. Furthermore, since the adhesive pad is formed by thickening it, the bonding force with the p-type semiconductor layer 13 can be increased due to its large thickness. Although a thick adhesive pad cannot express light permeability, if it is formed of the same material as the P electrode, the contact ohm can be achieved. Fig. 5 shows the cutout 312 in which the corner portion of the translucent p-electrode 15 is to be cut away. The same device as that shown in Fig. 4 is shown temporarily. In addition, on FIG. 5, in order to clearly show the notch 312, the adhesive pad is not shown. Fig. 6 shows an insulating and transparent protective film (protective film 411) covering a thin, translucent P electrode 1S, and shows the same device as the light emitting device shown in Fig. 1. The protective film has transparency that allows more than 90% of light to be transmitted. In addition, since the protective film is insulating, the metal balls formed on the η electrode 14 and remaining on the bottom when the wires are bonded can prevent an electrical short circuit between the two even if they are in contact with the ρ electrode 15. In addition, the protective film is transparent and can transmit light emitted from the device that passes through the ρ electrode without reducing the quantum efficiency (light extraction efficiency) outside the device. Furthermore, the protective film prevents the thin p-electrode 15 from being damaged, and also prevents the wire from being pulled off when the bonding pad I7 'or the p-electrode is wire-bonded. As long as the material forming the protective film is transparent and insulating, it is desirable to include silicon oxide, titanium oxide, aluminum oxide, and silicon nitride, although there is no particular limitation. These materials are colorless and transparent regardless of the thickness of the film and are insulating. Therefore, 'the protective film formed by these materials transmits almost no light through the ρ electrode {please read the precautions on the back before filling in this page} binding. Binding .. thread. ) T4 specification (21 × 297 mm > 403945 Printed by Shellfish Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs, 5. Description of invention (15) will cause it to decay. The protective film can use ordinary evaporation, or sputtering technology Although the thickness of the protective film is not particularly limited, it is usually from 0.03 to 11 'to 10; 11'. In addition, particularly in the field between the η electrode I4 and the bonding pad 17, when the bonding is performed online, The metal ball formed by the bonding wire makes the 11 electrode 14 and the? Electrode 15 easily cross-linked. Therefore, in FIG. 6, the protective film 411 covers such a field in a comprehensive manner. In FIG. 7, the protective film (protection (Film 412) The entire exposed surface of the P electrode 15 and the exposed end surface of the p-type semiconductor layer 13 and the exposed surface of the n-type semiconductor layer are covered, and the structure is the same as that of FIG. 6. Therefore, the light emission of FIG. The reliability of the device is improved more than the device of FIG. 6. 8, a continuous protective film (protective film, the adhesive part with the bonding line of the η electrode 14 and the adhesive part with the adhesive pad I7 is subtracted, and almost the entire wafer is covered, showing the same structure as in Figure 6. A protective film is also formed on the surface of the adhesive pad 17, and the adhesive pad I7 becomes further pressed by the protective film, which can prevent the adhesive pad 17 from detaching from the P electrode 15. Moreover, because the protective film is also formed on the η electrode 14, It can also prevent the η electrode I · 4 from detaching from the η-type semiconductor layer 12. For this reason, it can provide a device with excellent reliability. Figure 9, except that the η electrode 14 and the bonding pad I7 are on the diagonal of a flat square wafer It shows the same structure as in Fig. 8 except for the corner portions that face each other. Because of this electrode arrangement, the same advantages as described in Fig. 3 can be obtained. Next, the n-electrode aspect of the present invention will be described. Η of the present invention The electrode is a metal material including titanium and aluminum and / or gold, for example, a material including titanium and aluminum, a material including titanium and gold, or a material including titanium and gold and aluminum. These metals are pre-alloyed, All metal layers can be laminated. The η electrode formed with these metal materials can be smelted {please read the precautions on the back before filling this page). Binding · 'Line. Specimen (CHS) T4 specification (210 X 297 mm) Printed by the Ministry of Economic Affairs, Central Sample and Specimen Bureau Shellfish Consumer Cooperative, printed 403945 5. After the description of the invention (16), it reached the η-type GaN M-V Good contact ohmic of the group compound semiconductor layer. The above-mentioned smelting temperature is particularly desirable at 400t: above. Smelting is ideally performed at 0.01 to 30 minutes. Generally, nitriding The gallium-based Π-V group compound semiconductor has the property of forming an n-type because it forms a nitrogen lattice void in the crystal even if it is not doped with impurities. In the growth of compound semiconductors, doped η-type impurities such as silicon, germanium, culvert, and sulfur appear to become more ideal η-conductive types. In addition, the 'nitridation-based compound-V compound semiconductor is a vapor phase growth method using an organic metal vapor phase growth method (MOCVD or MOVPE), a Mg vapor phase growth method (HDCVD), and a molecular wire crystal orientation (MBE). For general growth. In such a gas phase growth method, for example, trimethylgallium is used as a gallium source, ammonia is used as a nitrogen source, or a compound containing a hydrogen atom is used, and a gas such as hydrogen is used as a carrier gas. These gases containing hydrogen atoms are thermally decomposed during the growth of a gallium nitride-based Group I-V compound semiconductor to dissociate the hydrogen, and the hydrogen is sucked into the grown semiconductor to form a lattice cavity with nitrogen or an n-type impurity. Combination, while hindering their role as donors. If the η electrode material or the ρ electrode material is smelted at a temperature of 400 »0 or more, the trapped gas in the semiconductor crystal is driven out, so that the η-type impurity or the P-type impurity in the crystal is activated, and the The increase in the concentration of the electron carrier, or the effectiveness of the overall carrier concentration, can be regarded as achieving ohmic contact with the electrode. The effect of this smelting is the same as the effect of the p-type impurity doped gallium nitride-based I-V compound semiconductor described in Japanese Patent Application Laid-Open No. 5-183189. In this bulletin, the p-type impurity doped nitrided m-V group compound semiconductor starts from a smelting temperature of 400 ° C, gradually decreases the resistivity, and smelts above 700 ° C. The temperature is displayed-the paper size is fixed to the national standard (CNS) A4 specification (210x297 mm) ...........; ............. ........................................ ........................... TΓ .................. ...... Wire {Please read the precautions on the back before filling in this page} Α6 Β6 403945 5. The resistivity of the invention description (17). In the n-type gasification system of the present invention-Group V compound semiconductor, although the resistivity was gradually reduced starting from smelting at 400 ° C, a sharp decrease in resistivity was not seen at 600. (:: The smelting 'becomes approximately 1/2 of the initial resistivity, and even if smelting exceeds this temperature, the resistivity will not be lowered. The smelting temperature of the η electrode is ideally 500 ° C or more. Above C, it is more ideal. In the case where the η electrode material contains an inscription, 'the smelting temperature is sufficient, the ideal temperature is 45 ° C or higher, and more preferably 500 ° C or higher. The upper limit of the smelting temperature' The same as the upper limit of the smelting temperature of the P electrode is the temperature at which the gallium nitride-based Group I-V compound semiconductor does not decompose. Although the total thickness of the η electrode is not particularly limited, it is usually 50 angstroms or more, and ideally ο.οίμπ »to 5jam 0 The n-electrode material of the present invention containing titanium and aluminum and / or gold is preferably a laminated structure of each metal layer. At this time, the titanium layer is directly contacted with an n-type gallium nitride system. Π -V compound semiconductor layer is ideal. Titanium can achieve better contact ohms with η-type gallium nitride based II -V compound semiconductor. At this time, the titanium layer is formed by 20A or even 0.3μm. The thickness is ideal. And the total thickness of the aluminum or gold layer is thicker than that of the titanium layer. Therefore, during smelting, a decrease in the bonding strength of the η electrode or the ball during wire bonding after the migration of the titanium surface is prevented. The η electrode of the present invention containing titanium and gold, or titanium and gold and aluminum, is prevented. The material has better oxidation resistance than the η electrode material composed of titanium and aluminum, and has a stronger connection with the gold balls formed when the wires are bonded. Moreover, the η electrode material of the present invention containing gold has a gold layer The laminated structure is ideal. Because the gold layer can of course be very strongly connected to the gold ball. Figure 10 shows temporally the size of the light-emitting paper with the double-shaped structure of the η electrode of the present invention, which uses the ten national standards ( CNS) A4 size (210x297 mm) .............. .......................................... ...... Order ............ line (please read the notes on the back before filling This page> Printed by the Ministry of Economic Affairs and the Central Bureau of Commerce, printed by the Consumers Cooperative 403945 A6 B6 Printed by the Central Bureau of Commerce of the Ministry of Economic Affairs, the Shelled Consumer Cooperatives. 5. Description of the Invention (18) This device is, for example, composed of sapphire On the substrate 11, for example, a buffer layer (not shown) formed between undoped GaN and a thickness of 0.002 to 0.5 μm, and the n-type gallium nitride-based Π-V group compound semiconductor layer 51 is formed, for example, ΐμχη to The thickness of um. On the n-type semiconductor layer 51, a n-type gallium nitride-based H-V group compound semiconductor, for example, a first cover layer 52 made of n-type GaAIN doped with an n-type impurity such as silicon is formed. The cover layer 52 is usually 0.01 to 5 μm, and preferably has a thickness of 0.1 to 4 μm. On the first cover layer 52, an active layer (light-emitting layer) 53 composed of a gallium nitride-based Π-V group compound semiconductor having a semiconductor different from that of the cover layer 52 is formed. This active layer 53 is an n-type or p-type impurity, and is preferably a low resistivity InaGa N (0 < a < l) formed preferably α 1 -α. The active layer 53 is 10 angstroms to 0.5 > ixn, and preferably has a thickness of 0.01 to 0.2 pm. 0 On the active layer 53, a p-type gallium nitride-based M-V group compound composed of a semiconductor different from the active layer 53 is formed. A second cover layer 54 made of GaAIN doped with a p-type impurity such as magnesium. The second cover layer 54 is usually 0.001 mm or more, and desirably has a thickness of 0.1 to 1 jirn. On the second cover layer 54, a contact layer 55 composed of a p-type gallium nitride-based U-V group compound semiconductor such as P-type GaN is formed, and a p-electrode 56 is formed thereon. The P electrode 56 may be formed of any suitable conductive metal material. As a P electrode material exhibiting good ohmic characteristics, a metal material containing nickel and gold can be given. Although nickel and gold may be alloyed in advance, a laminated structure of each metal layer (in this case, it is desirable to directly contact the nickel layer and the contact layer 55) is particularly desirable. Of course, the light-transmitting ohmic P electrode 15 of the present invention in each of the above cases, and this paper size is applicable to the standard of CNS A 4 (210X297 mm) {Please read the precautions on the back before filling Copybook >. Binding--thread. 403945 A6 B6 Printed by the Central Laboratories Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives. 5. Description of the invention (19) The adhesive pad 32 can be applied to the device of FIG. 10. 56 P electrodes are connected to the bonding wire 60 through the metal balls 59. The wafer is partially etched away from the contact layer 55 in its depth direction 'and reaches the surface of the 0-type semiconductor layer 51, so that the n-type semiconductor layer is partially exposed. On the exposed surface of this n-type semiconductor layer S1, an n-electrode 5? Of the present invention is formed. The n electrode 57 is connected to the bonding wire through a metal ball. **** Experimental example 6 **** On a sapphire substrate having a diameter of 2 inches, a thickly doped η-type GaN layer was formed, and 1,000 η electrode materials were each vapor-deposited on the surface with a size of 100 μm. Smelt at 450 ° C. The current-voltage characteristics between electrodes made of the same material were measured. The results are shown as lines A to D in FIGS. 11A to 11D. FIG. 11A is an electrode obtained by sequentially stacking titanium and aluminum at a thickness ratio of 0.01: 1, and FIG. 11B is an electrode formed by using a 6-doped alloy containing 1% by weight of titanium. FIG. 11C is a separate electrode. An electrode made of titanium, and FIG. 11D is an electrode made of aluminum alone. Although these figures each represent a representative current-voltage characteristic, the electrodes made of titanium and titanium show good contact ohms with the n-type GaN layer as shown in Figs. 11A and 11B. The 1000 electrodes are all shown in the ohmic characteristics shown in Figs. 11A and 11B. On the other hand, electrodes made of titanium alone or aluminum alone are shown in Figures 11C and 11D, respectively. None of them show good contact ohms. Among the 100 electrodes, The ohmic characteristics of FIG. 11A and UB are just a few. Furthermore, when the surface of the electrode after smelting is observed with a microscope, an electrode made of titanium alone or aluminum alone has more than 90% of its surface dysprosium black. **** Experimental example 7 **** (Please read the precautions on the back before filling in this page> Binding, binding, thread paper size, national standard (CNS) T4 specification (210x297 mm) ) A6 B6 403945 V. Description of the invention (20) On the sapphire substrate with a diameter of 2 inches, a η-type Ga9AlO / layer of doped silicon with a thickness of 0.1 Sum is formed. On the surface, a size of 100 Mm is formed. Η electrode material of the laminated structure of titanium and aluminum, the thickness ratio of the titanium layer and the aluminum layer was changed to 10,000 for each steam ore, and smelted at 45 ° C. The current of an electrode composed of the same material was measured- Voltage characteristics. The results are shown by the lines A to D in the graphs UA to 12D. In FIGS. 12A to 12D, the thickness ratio between titanium and aluminum is 0.001: 1, and the thickness ratio between aluminum and titanium is 0.001: 1, and titanium and An electrode in which aluminum has a thickness ratio of 1: 0.001 and aluminum and titanium have a thickness ratio of 1: 0.001. These figures clearly show an electrode composed of titanium and aluminum, regardless of the content ratio of titanium to inscription. All have good ohmic characteristics. In addition, the Ti-Al electrodes that make the titanium layer directly contact the n-type semiconductor layer are all shown in Figures 12A and 12C. The good ohmic characteristics of Al-Ti electrodes that directly contact aluminum with the n-type semiconductor layer do not show the ideal ohmic characteristics. Moreover, none of the electrodes has deteriorated. **** Experimental Example 8 **** On the silicon-doped η-type GaAIN layer, 0.03juin thick titanium is vapor-deposited first, and 0.5; am thick aluminum is vapor-deposited thereon, and finally 0.5 jam thick gold is vapor-deposited, and then the laminated structure is deposited at various temperatures. Smelt for 5 minutes. Measure the current and voltage characteristics of the obtained electrodes. The results are shown in Figures 13A to 13D with lines A to D. Figure 1: 3A is the case where the smelting temperature is 300 ° C. When the smelting temperature is 400 ° C, Figure 1: 3C is the case where the smelting temperature is 500 ° C, and then Figure 13D is the case where the smelting temperature is 600 ° C. From these figures, it can be seen that the smelting temperature is 30CTC. The electrode has no ohmic characteristics with the! 1 type semiconductor layer (Fig. 1SA), and the smelting temperature is 400. (: Above, good ohmic characteristics are exhibited (Fig. 1; 3B ~ ISD). In addition, titanium and N electrode formed by alloy of aluminum and gold. This paper is suitable for China National Standards (CNS) A4 (210x297). (Mm) ............................... ............................................ .................... line one, please read "French Legal and Italian Matters on the Back 4 Write this page) Central Ministry of Economic Affairs Printed by the Shellfish Consumer Cooperative, printed by the Central Government of the Ministry of Economic Affairs, printed by the Shellfish Consumer Cooperative, 403945-V. Description of Invention (21) The same result can be obtained. **** Experimental Example 9 **** Except that on the silicon-doped η-type GaN layer, titanium was deposited in a thickness of 0.33 in. And gold was deposited in a thickness of 0.5 mm. Experimental Example 8 The same experiment. The results are shown in FIGS. 14A to 14D by lines A to D. Fig. 14A is the case of smelting temperature of 300 ° C, Fig. 14B is the case of smelting temperature of 400 ° C, Fig. 14C is the case of smelting temperature of 500 ° C, and finally Fig. 14D is the case of smelting temperature at 600 ° C . From these figures, it can be seen that when the smelting temperature is 300 ° C, the good ohmic characteristics between the electrode and the η-type semiconductor are not shown (Figure 14A), and the ideal ohmic characteristics are shown above 400 ° C (Figure 14B ~ 14D). . In addition, the same results were obtained for an η electrode composed of an alloy of titanium and gold. Comparing Figs. 13A to 13D with Figs. 14A to 14D, if aluminum is added to an electrode material containing titanium and gold, an η electrode showing ideal ohmic persistence can also be obtained at a lower smelting temperature. Desirable ohmic characteristics can be obtained at a lower temperature, and decomposition of the gallium nitride-based Group I-V compound semiconductor due to heat can be suppressed, and it is particularly desirable to maintain its crystallinity. **** Experimental Example In order to investigate the connection strength between the η electrode and the gold ball, the following experiment was performed. Referring to FIG. 15, on a silicon-doped n-type GaN layer 61, a thin film formed of A1, or a multilayer film formed of Ti-Al, Ti-Au, Ti-Au-Al, or Ti-Al-Au ( Each multilayer film is laminated in this order from the left), 1000 pieces each having a diameter of 120 mm are formed, and smelted at 500 ° C. to form an η electrode 62. Each? Electrode was then left in the air for one day for surface oxidation. Gold wires 64 are then bonded to each of the n electrodes 62 by ball bonding. Gold balls 63 having a diameter of 100 μm were formed. After that, the front side of the ball began to dig the ball 63 with the knife 65, the horizontal direction, the ball 63 fell off, or the paper size used in China B National Chess Standard (CNS) 肀 4 specifications (210X297 male *) .... ........................................ ............................................... .... Order .............. line (please read the precautions on the back before filling in the book > Central Standards Bureau of the Ministry of Economy Printed by the cooperative 403945 Α6 _ Β6 V. Description of the invention (22) It does not fall off and is destroyed. A heavy object is hung on the knife 65, and the scab is shown in Table 2. In Table 2, the number under each weight indicates that the ball passes from the electrode The number of falling off, those who are damaged without falling off the ball are recorded as " damage ". Table 2 20 g 30 g 4 0 g 50 g 60 g 70 g A1 95 5----Ti-Al 93 Ί — ---Ti-Au-Al 0 0 6 25 69 Ti-Al-Au 0 0 0 1 5 Damage Ti-Au 0 0 0 0 1 The damage is shown in Table 2 and consists of titanium and gold, or titanium, aluminum and gold The formed η electrode has better oxidation resistance than the η electrode made of titanium and aluminum, and therefore exhibits a stronger bonding force with gold balls. In addition, if it is made of titanium The η electrode composed of aluminum and gold has a stronger bonding force than the aluminum placed on the uppermost layer. It has better ohmic characteristics. The η electrode material composed of titanium and aluminum In order to prevent the reduction of the bonding force with the metal ball caused by oxidation, it is also desirable to laminate a high melting point metal material layer having a higher melting point than aluminum on its surface. Among the high melting point metal materials, gold is included. , Titanium, nickel, platinum, tungsten, molybdenum, chromium, and / or copper. The ideal is gold, titanium, and / or nickel. These materials are very tight with the first metal material layer formed by titanium and aluminum. Good, will not be detached from the first material layer, and the gold paper size A formed when bonding with the thread is t mesh B family standard (CNS) f 4 specifications (210X297 public love) ..... ........................................ ............................................................. ... Order ........... line {Please read the notes on the back before filling in this page) A6 B6 403945 V. Description of the invention (23) The connection of the sphere is also very good. Among them, the second high melting point material is preferably a gold-containing material. Particularly preferred are materials containing gold and refractory metals other than gold (ideally titanium and / or nickel). These high-melting-point materials may be alloyed in advance, but those having a laminated structure of each metal layer are preferred. In this case, it is desirable to use gold as the uppermost layer, as described above. After forming such a laminated film, it was smelted under the above conditions to obtain an η electrode. The second high-melting-point metal is aluminum contained in the underlying metal material, and prevents migration to the surface of the η electrode, thereby preventing oxidation of the crystal. FIG. I6 shows the η electrode 57 having such a laminated structure. In FIG. 16, the η electrode 57 is a first thin film 57a formed of a laminated structure of titanium and aluminum, and a second thin film 57b formed of a high melting point metal material such as a laminated structure formed thereon, both Composition. **** Experimental Example 11 **** On a silicon-doped η-type GaN layer, 0.03jum-thick titanium was vapor-deposited thereon to a thickness of 0.15 μm, and a first thin film was formed. The same experiment as Experimental Example 8 was performed except that 0.03 Mm-thick titanium, 0.03 Jm-thick nickel, and O.SjLim-thick gold were deposited in this order. The results are shown as lines A to D in Figs. 17A to 17D. Fig. 17A is the case of smelting temperature of 300 ° C, Fig. 1.7B is the case of smelting temperature of 40CTC 'Fig. 17C is the case of smelting temperature of 50,000, and finally Fig. 17D is the case of smelting temperature of 600t: . From these figures, it can be seen that when the smelting temperature is 300 ° C, good ohmic characteristics do not appear between the electrode and the η-type semiconductor (Figure 17A), and when the smelting temperature is above 400 ° C, ideal ohmic characteristics are shown (Figure 17B ~ 17〇). Moreover, it was also found that smelting at 600 ° C did not deteriorate the ohmic characteristics. **** Experimental Example 12 **** In order to investigate the connection strength between the η electrode and the gold ball, use the following paper in Table 3. The paper size is suitable for the standard of Chinese family standard (CNS) f 4 (210x297 mm) .. .........; ............................. ........................................... Order ... ......... line (please fill in the notes on the back of M Jing before filling out this page) Printed by S Industry Consumer Cooperative of Central Bureau of Standards, Ministry of Economic Affairs 403945 A6 B6 The invention of the electrode material listed in (24) was subjected to the same experiment as in Experimental Example 10. The results are shown in Table 3. Table 3 20 grams 30 grams 40 grams 50 grams 60 grams 70 grams Ti-Al 93 7--One Ti-Al-Au 0 0 0 1 5 Damage Ti-Al-Ti-Au 0 0 0 0 0 Damage Ti-Al -Ni-Au 0 0 0 0 0 Destroy Ti-Al-Ti-Ni- • Au 0 0 0 0 0 Destroyed by the Central Bureau of Standards of the Ministry of Economic Affairs, Printed by the Bayer Consumer Cooperative, it can be seen from Table 3 that high melting point metal materials make titanium A metal material made of aluminum and aluminum improves oxidation resistance and improves the connection with the ball. In addition, the η electrode of the present invention described above is applicable to the η electrode 14 of the device of FIGS. 1 and 3 to 9, which naturally improves the characteristics of this device. Examples of the present invention will be described below. ===== 实施 例 1 ==== On a sapphire substrate, a buffer layer (thickness: 0.02Win) made of undoped GaN and a silicon-doped η-type GaN layer (thickness: 4Λ1ΙΠ) And a magnesium-doped p-type GaN layer (having a thickness of ijam), a wafer having a diameter of 2 inches laminated in this order is prepared, and then a p-type GaN layer is desired to expose the η electrode forming portion of the η-type GaN layer It is removed by etching. Next, after partially covering the exposed n-type GaN layer, the p-type GaN layer was completely vapor-deposited with a thickness of 0,03jura and a thickness of 0.07juin of gold, and then tas was used for this paper. Where) τ 4 secret m〇297297; aT) .......... \ .................... ..................... ^ .. .....................- ΪΓ .............. line: {Please first M (Please read the notes on the back and fill in this page) 403945 A6 B6 Printed by the Central Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, V. Description of Invention (25) The vapor-deposited film is deposited on the exposed surface of the n-type GaN layer. aluminum. Then, the obtained wafer was subjected to smelting at 50 ° C. for 10 minutes. The thickness of the P electrode after smelting was 0.07 JLHII, which showed light transmittance. This wafer was cut out of a 305-square-meter cube, and a cube was placed in a cap-shaped lead frame as shown in Fig. 1 and a predetermined wire was bonded to produce a light-emitting diode. The light-emitting output of this diode is 20 rnA and 80 UW, and the forward voltage is 4 V. Furthermore, the number of crystal cubes cut from a 2-inch wafer is about 16,000. The light-emitting diodes obtained from these crystal cubes are removed from contact The qualified rate after defective products is above 95%. Therefore, when using the wafer obtained in Example 1 to arrange the crystal cube directly with the P electrode and the η electrode in direct contact with the lead frame (with the sapphire substrate on top) as in the original case, the crystal cube specifications also need to be minimal. lrnn horn. To make this lmm-angle crystal cube span two lead frames, install the necessary electrode connections to make a diode. The light-emitting output of this light-emitting diode at 40 ° is 40uw. It is known that the lateral light emission cannot be fully extracted. In addition, the number of crystal cubes cut from a 2-inch wafer does not exceed 2000, and the pass rate of the diodes obtained from these crystal cubes after removing the defective products is only 60%. In this way, according to the present invention, the electrode of the P-type semiconductor layer is made of a metal capable of achieving ohmic contact and is translucent, and can provide light emission that allows light emission from a gallium nitride compound semiconductor. The device 'therefore confirms that the external quantum efficiency (light extraction efficiency) of the light emitting device is not reduced, and light emission can be efficiently extracted. Furthermore, according to the present invention, the size of the single crystal cube can be reduced, and the productivity can be further improved, and it can be confirmed that an improvement in the yield rate and a reduction in the production cost can be achieved. } Paper scales around the taa mound, quasi (CNS) f4 «^ _X297 male dragon) ~ t Please read" Notes on the back before filling out this page). Binding ... Thread. A6 B6 403945 V. Description of the invention (26 ) ===== Example 2 ==== Except for smelting at 600 ° F, the procedure of Example 1 was performed. The obtained P-type electrode had almost the same thickness as in Example 1 and exhibited the same light transmittance. Furthermore, the produced light-emitting diode exhibited almost the same light-emitting output and forward voltage as in Example 1, and the pass rate was also approximately the same. ===== Embodiment 3 ==== On the p-type GaN layer, the path of O.Sjum, 0.5; um thick 錬 other than ’is deposited. The obtained P-type electrode had a thickness of 0 · 7 #, and exhibited such light transmittance. In addition, the produced light-emitting diode exhibited a light-emitting output substantially the same as that of Example 1, a forward voltage, and the pass rate was also approximately the same. ===== Embodiment 4 ==== On the p-type GaN layer, the order of Example 1 was performed in addition to 0.1 Wwm thick platinum and 0.1 MΠ »thick titanium. The obtained P-type electrode had a thickness of 0.07, and the temporal transparency was the same. In addition, the light-emitting diode produced had approximately the same light-emitting output as that of Example 1, and had a forward voltage, and the pass rate was also substantially the same. ===== Example 5 ==== On a sapphire substrate with a diameter of 2 inches, a GaN buffer layer, a silicon-doped n-type GaN layer, a silicon-doped GaAIN cover layer, and a zinc-doped silicon layer InGaN active layer, Mg-doped GaAlN capping layer, and M-doped p-type GaN contact layer were fabricated into a wafer with a double-shaped structure. Next, the 1-crystal square has a structure as shown in FIG. 10, and etching is performed to locally expose the n-type GaN layer. Using a predetermined photomask, 100 λ of titanium was vapor-deposited on each of the exposed n-type GaN layers, and 0.5 Mm thick gold was formed thereon to form a multilayer film having a diameter of 100 μm. This paper uses the national standard (CNS) T4 specification (210X297) * .................... ........................................ ................................................................................. Please read the notes on the back before filling in this page. 1 Printed by the Central Laboratories of the Ministry of Economic Affairs, printed by the Cooperative Consumer Cooperative 403945 Printed by the Central Laboratories of the Ministry of Economic Affairs, Consumers Cooperative Cooperative. 5. Description of the invention (27) The obtained wafer was smelted under a radon blanket at 600 ° C. for 5 minutes, and the multilayer film was used as an η electrode. When the wafer prober measures the current-voltage characteristics between the n electrodes, the ohmic characteristics shown in Fig. 12D are temporally shown. Next, a p-electrode was formed on the P-type contact layer by a conventional method, and then the wafer was cut into a crystal cube. In this way, 15,000 crystal cubes were obtained from a 2-inch wafer. The crystal cubes are bonded and arranged on a lead frame, and a gold wire is connected to the P and η electrodes by a ball coupler. Of the isooo cubes, in the ball coupler, there was no detachment from the ball and the η electrode. Moreover, after bonding, 20 crystal cubes were randomly drawn out, and the respective gold wires were pulled, and all the gold wires were broken before the ball fell off the η electrode. ===== Example 6 ==== η Electrode material 'Same as Example 5 except that the spinning of 100 λ was carried out, the thickness of which was 0.4 μm, and 15,000 light-emitting crystals were obtained. square. The specific measurement of the current-electricity of all the η electrodes by the wafer prober is as shown in FIG. 11A. Moreover, among the 1S000 crystal cubes, no detachment from the ball and the η electrode occurred during the ball bonding. Furthermore, after bonding, 20 crystal cubes were randomly drawn out, each of which was pulled with gold wires, all of which broke the gold wires before the ball fell off the η electrode. ===== Example 7 ==== η electrode material, except that 0.5-jim-thick Ti-Al alloy containing 1% titanium I * was deposited in the same manner as in Example 5 to obtain 15,000 light-emitting crystal cubes. The current-voltage characteristics of all the η electrodes were measured by a wafer prober, and the characteristics are shown in Fig. 11B. Furthermore, among the 15,000 crystal cubes, no one fell off from the ball and the η electrode during the ball bonding. Furthermore, after bonding, 20 core pieces were randomly drawn out, each of which was pulled with gold wires, and all of them were broken before the ball fell off the η electrode. ===== Embodiment 8 ==== The light emitting crystal of Example 5 is placed at the P electrode and the η electrode with 2 lead frames ........ ........................................ ................................................... 玎............. line (please read the precautions on the back before filling in this page) This paper uses the Chinese National Standard (CNS) A4 specification (210X297 mm) 403945 A6 B6 Printed by the Central Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. 5. Description of the invention (28). At this time, the P electrode and the η electrode are connected by a rhenium adhesive. When the lead frame connected to the η electrode is pulled after the connection, light is emitted on the different surface of the indium and the lead frame. In this embodiment, the n-electrode of the present invention is directly and strongly connected to the lead frame using a general adhesive such as solder, rhenium, and gold alloy. ===== 实施 例 9 ==== η electrode material, titanium is deposited ΙΟΟΑ thickness of titanium, which is ο.ίμιη thick aluminum, to form a first thin film, and then a second thin film thereon, forming 0. With the exception of titanium having a thickness of 0.1 μm and nickel having a thickness of 0.1 μm, as in Example 5, 15,000 light-emitting crystal cubes were obtained. The current-voltage characteristics of all the η electrodes measured by the wafer prober are the characteristics shown in FIGS. 1I to 3D. In addition, among the 5,000 crystal cubes, there was no detachment from the ball and the η electrode during the ball bonding. Moreover, after bonding, 20 crystal cubes were randomly drawn out, and the gold wires were pulled individually, and all the balls were broken before the wires detached from the electrode. ===== 实施 例 10 ==== η electrode material The second thin film was deposited with a thickness of 0.1 μm and a thickness of gold of 0.4 μm, and 15000 light-emitting cubes were obtained in the same manner as in Example 9. The current of all η electrodes was measured by a wafer detector. -The electrical characteristics are as shown in FIG. 14D. In addition, among the 1S000 crystal cubes, there is no detachment from the ball and the η electrode during the ball bonding. Moreover, after bonding, 20 crystal cubes are randomly extracted. Each one pulls the gold wire, and all the balls break the gold wire before falling off the electrode. ==== Example 11 ==== The second thin film of η electrode material, except that titanium was deposited to a thickness of 0.1 μm, chromium, and gold to a thickness of 0.4 μm were obtained in the same manner as in Example 9 to obtain { Please read the precautions on the back before filling in this page). Binding-bookbinding .. Thread paper size: Ten 鼸 National Standard (CNS) 曱 4 specifications (210x297 public love) A6 B6 403Θ45 5. Description of the invention (29) 15,000 luminous crystal cubes. The current-electricity characteristics of all the η electrodes were measured using a wafer prober, and the characteristics shown in Fig. 13C or Fig. 1: 3D were given. In addition, among the 15,000 crystal cubes, there was no detachment from the ball and the η electrode during the ball bonding. Further, after bonding, 20 crystal cubes were randomly drawn out, and all the balls of each of the gold wires' were pulled, and the gold wires were broken before they were separated from the η electrode. ===== Example 12 ==== The light-emitting crystal of Example 9 is connected to two lead frames at the position of the P electrode and the η electrode '. At this time, the P electrode and the η electrode are connected to each other through a fluorene adhesive. When the lead frame connected to the η electrode is pulled after the connection, the interface between 絪 and the wrong frame will fall off. Although the present invention has been described above with reference to specific cases, the present invention should not be limited to these. Each condition can be applied to other situations where appropriate. In addition, according to the present invention, a gallium nitride-based M-V compound semiconductor light-emitting device with a P-η homojunction or a P-η double heterojunction can also be applied to a GaN single heterojunction gallium nitride M- Group V compound semiconductor light emitting device. Furthermore, the present invention is applicable not only to light-emitting diodes, but also to other light-emitting devices such as light-emitting laser diodes, and further to light-receiving devices such as solar cells and photodiodes having sensitivity to a wavelength of 600 rm or less. Furthermore, the present invention mainly provides an electrode material having good ohmic contact to a gallium nitride-V group compound semiconductor. Therefore, the present invention can also be applied to a substrate having a P-type gallium nitride-based II-V compound semiconductor layer and / The substrate of any semiconductor device of the n-type gallium nitride-based M-V compound semiconductor layer is not limited to an insulating substrate such as sapphire. Semiconductors such as silicon carbide, silicon, zinc oxide, arsenide, and gallium phosphide can be used. Substrate. This paper size is in accordance with China National Standards (CNS) 肀 4 specifications (210X297 male *) ............... ........................................ .............. Order ......... line (please first Note on the back of Min Du, please fill in this page again> Printed Chinese Manual of Patent Application No. 83103775, Revised Page of the Patent Application No. 83103775 by the Central Bureau of Standards of the Ministry of Economic Affairs (March 90)

(4-0^ 五、發明説明(i ****發明的背景**** 本發明係關於具有歐姆電極的氮化镓系ffl _v族化合物 半導體装置及其製造方法。 ****相關技術之説明**** 近年,使用氮化镓(GaM)、鋁氮化镓(GaA1N)、镓氮化 姻(InGaN)、孩氮化纟S鋁(InAlGaN)等之氮化镓系I - V族化 合物半導體、材料的發光裝置受到注目。該發光裝置通常在 基板_£具有η型氮化镓系化合物半導體層,與p型雜質 (dopant) 掺雜(dope)之氮化镓系]j -v族化合物半導體眉所層合的構 造0 以前,p型雜質所摻雜之氮化镓系m -V族化合物半導 體層仍屬高電阻之i型,因此過去的装置爲所謂的MIS型構 造。最近,將高電阻i型/1轉化爲低電阻的p型眉的技術, 如在持開平2_257679號、持開平3_218325號,及持開平5_ 183189號所揭示的。似乎已能實現p_n接合型的氮化镓系I -V族化合物半導體發光裝置。 然而,若是該p-n接合型之氮化H:系化合物半導體要能 實現的話,接在p型層及/或η型層所形成電極之各種問題是 很明白的。 ’’ 在當前的P-η接合型氮化镓呆II -V族化合物半導體發 光装置,由其製造上的限制,在化合物半導體層之中,最 上眉有Ρ型化合物半導體層。而且,一般上是使用透明之藍 賨石(Sapphire)基板來作爲該裝置之基板◊與使用在其他 半導體發光裝置上之砷化镓、鋁磷化鎵般之半導體基板不 同,因藍袞石是絕緣性,裝置無法將爲了在化合物半遵(4-0 ^ V. Description of the invention (i **** Background of the invention ****) The present invention relates to a gallium nitride-based ffl_v group compound semiconductor device having an ohmic electrode and a method for manufacturing the same. **** Related Explanation of technology **** In recent years, gallium nitride (GaM), aluminum gallium nitride (GaA1N), gallium nitride (InGaN), ytterbium nitride aluminum (InAlGaN), and other gallium nitride-based I- Group V compound semiconductor and material light-emitting devices have attracted attention. This light-emitting device usually has an n-type gallium nitride-based compound semiconductor layer on the substrate, and a gallium nitride-based dopant dopant] j -Laminated structure of -v compound semiconductor eyebrows 0 Previously, gallium nitride-based m-V group compound semiconductor layers doped with p-type impurities were still high-resistance i-types, so the past devices were so-called MIS-type structures Recently, the technology of converting high-resistance i-type / 1 to low-resistance p-type eyebrows, as disclosed in No. 2_257679, No. 3_218325, and No. 5_183189, seems to be able to achieve p_n junction type GaN-based I-V compound semiconductor light-emitting device. However, if this is a pn junction type nitride H If a compound semiconductor is to be realized, the various problems of electrodes formed on the p-type layer and / or the η-type layer are well understood. '' In current P-η junction type gallium nitride, II-V group compound semiconductors The light-emitting device is limited by its manufacturing. Among the compound semiconductor layers, there is a P-type compound semiconductor layer at the top. In addition, a transparent sapphire substrate is generally used as the substrate of the device. The semiconductor substrates like gallium arsenide and aluminum gallium phosphide are different on other semiconductor light-emitting devices. Because blue sapphire is insulating, the device cannot use

II

(妆先《«背面之注*事項再填S本頁J .装 訂 .¾濟部中夬»準扃只工消f合作社印ft 本纸法又度逍用t a 3家«準(CNS> T 4规格(210χ 297公 «is.iJ.bsrsrT/'osi^i^o^iiipw 第83103775號專利申請案 中文說明書修正頁(90年3月) A6 _ E6 五、發明說明(2 ) 證上外加所定的蜇流而使其逹成其g光機能的踅掻直接安 装在基板本身β P踅搔及n||極都必須直接連接在個別之pS 化合物半導皚ig及η型合物半導證層上來形成。p電搔保 証對P型化合物半導體庙整諼的均一性電流附加.並且為了 從装置搜得均一性發光.幾乎將P型層全面的瑷蓋來形成。 然而,過去的P電極因Μ非透光性,過去的發光裝置之發光 ,為了 g免由於pgig掻發光衰减所造成的外部g子效率惡 化,無法在化合物半導體層及η型化合物半導膜層所形 成的基板方面的相反方向來加以觀察。 因此,若將該習用化合物半導程發光裝置固定在鉛框 時.因使不形成化合物半導匿層之基板面朝向上方.ρ霉搔 及η電搔在下方,而必須由二籲鉛框來加以承載。亦即.必 須將一飽半導證薄片挎載於二値鉛框上。此時,為了規避 Ρ型化合物半導锓層與η型化合物半導體層之電氣性短路, 必須確保二痼鉛框間某種程度的間隔,自然的半導居的一 茴晶方規格也不得不故大到约在lmm2以上。因此,在.習知 的装置構造上,由一Η晶片(Wafer)所搜得的薄片數必然的 費少。而且.謓二儲鉛框的位置非常澉细的吻合,與氮化 鎵合物半導匿的精巧之拽刻(etching >技術也是必要的。 其次,雖傜有盹於nS掻,而就如上述,似乎讓P-n接 合型氮化条Μ -V族化合物半導證發光裝置可以實現的,乃 是最近的搴倩.在過去的MIS型構造之發光装置方面•因Ϊ5 極偽利用與髙電阻率i型層的敢恃基屏障 (Schottky barrier) .η3|掻上幾乎不披注窸β 習知的MIS構迪的気化鎵条H -V族化合物半導g發光 :U 先??:?背-RiL:ii--«H.>4^.KiJ~ 裝 訂 表汰法疋/t逍m令3 a孓丨念立〇’s丨甲4現格丨210 >: .237公没> 第83103775號專利申請案 中文說明書修正頁(90年3月) A6 B6 五、發明説明(10 ) 含鋁之金或不含絡的金屬材料,可列舉如金、钛、鎳、$0 及/或含白金材料。由這樣的金屬材料所形成的黏合墊,與 P電極13的連結性亦良好》與金線做引線連接時,與由金線 所形成的球之連結性亦良好。進而,這種金屬材料在冶煉 時,或爲了發光而對裝置的通電中,大致不會向p電極遷移 而使P電極樊質(使透光性降低)。含鋁或鉻的金屬材料,通 電中比較短的時問(如5〇0小時),就含遷移到P電極中,而 使之樊質。' ****實驗例2**** 將藍袞石基板作爲基板11,厚度爲4Min的η型GaN眉作爲 η型半導體眉,厚度的鎂摻雜p型GaN層作爲p型半導體;1 ,圔1所示的装置之P電極I5之上形成由各種金屬材料所構 成的黏合墊。p電極I5是將鎳層與金/1依次各別蒸镀〇 · Urn 的厚度以600_C退火而使那些金屬合金化及樊透明,而得 到的厚度爲0. 〇5wm之物。 更具體的,由下述表1所示黏合墊材料在P電極上形成 了黏合墊。即黏合墊是將表1的列所示的金屬眉直接在P電 極上形成,其上將表1的行所示的金屬層蒸镀,在p電極的 冶煉時’同時治煉而形成。黏合線爲金線。 將如此搜得的發光装置’使其連續發光500小時,來調 查黏合塾對P電極上的影銮。結果記載於表1。 t請先Mtf背面之注意事項再填茗本頁) 裝 -訂· Λ濟部t夬«準局AX消f含作社印製 本纸張ΛΛ通用中B B家捸準(CNS) TT4规格<210x297公«·)(Make-up "« Notes on the back side * Matters and then fill in this page J. Binding. ¾ Ministry of Economic Affairs »Zhunji only eliminates f cooperative printing ft paper method again 3« quasi (CNS > T 4 Specification (210χ 297 male «is.iJ.bsrsrT / 'osi ^ i ^ o ^ iiipw Patent Application No. 83103775 Patent Application Specification Correction Page (March 90) A6 _ E6 V. Description of Invention (2) In addition to the predetermined flow, it is converted into its g-light function. It is directly installed on the substrate itself. Β P 踅 搔 and n || poles must be directly connected to the individual pS compound semiconducting ig and η-type compounds. The proof layer is formed. The p-electrode ensures that a uniform current is added to the P-type compound semiconductor temple. And in order to find the uniformity of light from the device, the P-type layer is almost completely covered. However, the past Due to the non-transmittance of the P electrode, the light emission of the conventional light-emitting devices, in order to avoid degradation of the external efficiency due to pgig 掻 emission attenuation, cannot be formed on the substrate of the compound semiconductor layer and the n-type compound semiconductive film layer To observe the opposite direction. Therefore, if the conventional compound semi-lead light-emitting device When it is set in a lead frame, because the substrate surface on which the compound semiconducting layer is not formed is facing upwards, ρ mold and η electricity are underneath, it must be carried by the two lead frames. That is, one must be fully saturated. The semiconducting foil is carried on the lead frame. At this time, in order to avoid the electrical short circuit between the P-type compound semiconductor layer and the n-type compound semiconductor layer, it is necessary to ensure a certain interval between the lead frame. The size of an anthracite square of the semiconducting semiconductor also has to be larger than about 1 mm2. Therefore, in the conventional device structure, the number of slices searched by a wafer is bound to be small. In addition, the position of the lead storage frame is very thin, and it is necessary for the delicate drawing and engraving (etching >) technology of the gallium nitride compound. Secondly, although there is no "nS", but As mentioned above, it seems that the Pn-bonded nitrided M-V compound semi-conducting light-emitting device can be realized, which is the most recent example. In terms of light-emitting devices of the past MIS-type structure, due to the use of Ϊ5 poles and 髙Schottky barrier .η3 | 掻 on resistivity i-type layer窸 β The conventional MIS-constructed gallium halide bar H-V group compound semiconducting g emits: U first? ::? Back-RiL: ii-«H. > 4 ^ .KiJ ~ binding table Law 疋 / t Xiaom Ling 3 a 孓 丨 Reading 0 ′s 丨 A4 is now 丨 210 >: .237 Gong > No. 83103775 Patent Application Chinese Specification Revision Page (March 90) A6 B6 Five 2. Description of the invention (10) Aluminum-containing gold or metal-free metal materials may include gold, titanium, nickel, $ 0, and / or platinum-containing materials. The bonding pad made of such a metal material also has good connectivity with the P electrode 13. When it is connected to a gold wire as a lead wire, it also has good connectivity with a ball formed of a gold wire. Furthermore, such a metal material hardly migrates to the p-electrode during smelting or energization of the device for light emission, thereby deteriorating the P-electrode (decreasing light transmittance). Metal materials containing aluminum or chromium, which are transferred to the P electrode for a short period of time (such as 50,000 hours) during power-on, make the material quality. '**** Experimental example 2 **** A sapphire substrate is used as the substrate 11, a η-type GaN eyebrow with a thickness of 4Min is used as the η-type semiconductor eyebrow, and a thickness of a magnesium-doped p-type GaN layer is used as the p-type semiconductor; 1 A bonding pad made of various metal materials is formed on the P electrode I5 of the device shown in FIG. The p-electrode I5 is formed by respectively vapor-depositing a nickel layer and gold / 1 in order. The thickness of Urn is annealed at 600 ° C to alloy those metals and make them transparent, and a thickness of 0.05 mm is obtained. More specifically, an adhesive pad was formed on the P electrode from the adhesive pad material shown in Table 1 below. That is, the bonding pad is formed by directly forming the metal eyebrows shown in the column of Table 1 on the P electrode, and the metal layers shown in the row of Table 1 are vapor-deposited, and are simultaneously processed during the smelting of the p electrode. The bond line is gold. The light-emitting device thus searched was allowed to continuously emit light for 500 hours to examine the effect of the adhesive on the P electrode. The results are described in Table 1. (Please note the notes on the back of Mtf before filling out this page) Binding-binding · Λ Department of Economics t 夬 «Jinju Bureau AX 消 f Included in printed paper ΛΛGeneral China BB Home Standard (CNS) TT4 Specifications & lt 210x297 male «·)

Claims (1)

丨〜厶;;r.丨 ~ 厶 ;; r. A8 BS C8 D8 申請專利範圍 S ^ 93/〇S 55/¾ 於丰 一 π π ω _ V恢化节、奶干导®衮置,兵具悚有: 具有第1及第2主面的基板; 在該基板的第丨主面上形成包含η型氮化鎵系m _ 合物半導體層,及p型氮化鎵系瓜_v族化合 +導體層的半導體層合構造; 接在該11型半導體層而形成的第1電極;及接在 型半導體層而形成第2電極;該第2電極由包含 鎳及金之金屬材料所形成,且與該P型半導體層 形成歐姆接觸。 項 上述裝置發出的光能 第2電極是由連接該 (請先聞讀背面之注意Ϋ項再填寫本頁) 2 ·如申請專利範圍第1項之裝置 從該基板的第1主面來_察。 導 鎳層,與在其上形成的金層所 4.如申,專利範圍第!項之裝置, μηι至Ιμτη的厚度。 巧开,U.〇〇l 訂· 5’:申凊專利範圍_】或3或4項之裝f,上 6 板的第2主面來支持該裝置的船框。 6. 如申蜎專利範圍第丨項之裝置,與 的接續含有為了與線黏合的黏合墊。 電礼性 7. 如申請專利範圍第6項之裝 或含金、或不含銘或絡的至少金' 的金屬材料。 裡以上的金屬所構成 8. 如申請專利範圍第6項之裝置該人 經濟部中夫梂準局MC工消費合作社印*. 鎳、銦及金白所構成,含有至少i :匕::與鈦、 所形成。 種金屬的金屬材料 9. 如申請專利範圍第6項之裝置,誃 極同一材料所形成。 σ 、與第2電 10.如申請專利範圍第6項之裝置, 電極直接連接的錄層,及在其上形與第2 如申請專利範圍“項之裝置,第$ $層3所形成的。 體層的表面具有局部性的露出之缺口 型半導 充填著上述黏合墊。 部在该缺口部 本紙張用中國國家樣丰(CNS )(加χ297公兼) -------- - 丨〜厶;;r.A8 BS C8 D8 Patent application scope S ^ 93 / 〇S 55 / ¾ Yu Fengyi π π ω _ V recovery section, milk dry guide ® set, horror weapons: substrate with first and second main surface A semiconductor laminated structure including an n-type gallium nitride-based m_ compound semiconductor layer and a p-type gallium nitride-based melon-v group compound + conductor layer is formed on the first main surface of the substrate; A first electrode formed by a type semiconductor layer; and a second electrode formed by being connected to the type semiconductor layer; the second electrode is formed of a metal material including nickel and gold and is in ohmic contact with the P-type semiconductor layer. The second electrode of the light energy emitted by the above device is connected to this (please read the note on the back first and then fill out this page) 2 · If the device in the scope of patent application for item 1 comes from the first main surface of the substrate_ Check. The nickel layer, and the gold layer formed on it 4. As claimed, the patent scope is the first! Item device, thickness of μηι to 1μτη. Qiaokai, U.001. 5 ′: Application scope of patent application] or 3 or 4 items f, the second main surface of the upper 6 board to support the device frame. 6. For the device in the scope of patent application of claim ,, the connection with and contains a bonding pad for bonding with the thread. Electricity 7. If the patent application scope item 6 is a metal material containing gold, or at least gold 'without a name or logo. Constituted by metal above 8. If the device in the scope of patent application is applied for, the device is printed by MC Industrial Consumer Cooperative Co., Ltd., China ’s Ministry of Economic Affairs *. It is composed of nickel, indium and gold and contains at least i: Formed by titanium. Metal materials of a kind of metal 9. Such as the device in the scope of patent application No. 6, formed of the same material. σ, and the second electric device such as the item 6 of the scope of patent application, the recording layer directly connected to the electrode, and the device formed on the second layer such as the device of the second scope of patent application, layer 3 The surface of the body layer has a partially exposed notch-type semiconductor filled with the above-mentioned adhesive pad. The paper used in this notch is made of China National Samples (CNS) (plus 297) and ---------丨 ~ 厶 ;; r. A8 BS C8 D8 申請專利範圍 S ^ 93/〇S 55/¾ 於丰 一 π π ω _ V恢化节、奶干导®衮置,兵具悚有: 具有第1及第2主面的基板; 在該基板的第丨主面上形成包含η型氮化鎵系m _ 合物半導體層,及p型氮化鎵系瓜_v族化合 +導體層的半導體層合構造; 接在該11型半導體層而形成的第1電極;及接在 型半導體層而形成第2電極;該第2電極由包含 鎳及金之金屬材料所形成,且與該P型半導體層 形成歐姆接觸。 項 上述裝置發出的光能 第2電極是由連接該 (請先聞讀背面之注意Ϋ項再填寫本頁) 2 ·如申請專利範圍第1項之裝置 從該基板的第1主面來_察。 導 鎳層,與在其上形成的金層所 4.如申,專利範圍第!項之裝置, μηι至Ιμτη的厚度。 巧开,U.〇〇l 訂· 5’:申凊專利範圍_】或3或4項之裝f,上 6 板的第2主面來支持該裝置的船框。 6. 如申蜎專利範圍第丨項之裝置,與 的接續含有為了與線黏合的黏合墊。 電礼性 7. 如申請專利範圍第6項之裝 或含金、或不含銘或絡的至少金' 的金屬材料。 裡以上的金屬所構成 8. 如申請專利範圍第6項之裝置該人 經濟部中夫梂準局MC工消費合作社印*. 鎳、銦及金白所構成,含有至少i :匕::與鈦、 所形成。 種金屬的金屬材料 9. 如申請專利範圍第6項之裝置,誃 極同一材料所形成。 σ 、與第2電 10.如申請專利範圍第6項之裝置, 電極直接連接的錄層,及在其上形與第2 如申請專利範圍“項之裝置,第$ $層3所形成的。 體層的表面具有局部性的露出之缺口 型半導 充填著上述黏合墊。 部在该缺口部 本紙張用中國國家樣丰(CNS )(加χ297公兼) -------- -A8 BS C8 D8 Patent application scope S ^ 93 / 〇S 55 / ¾ Yu Fengyi π π ω _ V recovery section, milk dry guide ® set, horror weapons: substrate with first and second main surface A semiconductor laminated structure including an n-type gallium nitride-based m_ compound semiconductor layer and a p-type gallium nitride-based melon-v group compound + conductor layer is formed on the first main surface of the substrate; A first electrode formed by a type semiconductor layer; and a second electrode formed by being connected to the type semiconductor layer; the second electrode is formed of a metal material including nickel and gold and is in ohmic contact with the P-type semiconductor layer. The second electrode of the light energy emitted by the above device is connected to this (please read the note on the back first and then fill out this page) 2 · If the device in the scope of patent application for item 1 comes from the first main surface of the substrate_ Check. The nickel layer, and the gold layer formed on it 4. As claimed, the patent scope is the first! Item device, thickness of μηι to 1μτη. Qiaokai, U.001. 5 ′: Application scope of patent application] or 3 or 4 items f, the second main surface of the upper 6 board to support the device frame. 6. For the device in the scope of patent application of claim ,, the connection with and contains a bonding pad for bonding with the thread. Electricity 7. If the patent application scope item 6 is a metal material containing gold, or at least gold 'without a name or logo. Constituted by metal above 8. If the device in the scope of patent application is applied for, the device is printed by MC Industrial Consumer Cooperative Co., Ltd., China ’s Ministry of Economic Affairs *. It is composed of nickel, indium and gold and contains at least i: Formed by titanium. Metal materials of a kind of metal 9. Such as the device in the scope of patent application No. 6, formed of the same material. σ, and the second electric device such as the item 6 of the scope of patent application, the recording layer directly connected to the electrode, and the device formed on the second layer such as the device of the second scope of patent application, layer 3 The surface of the body layer has a partially exposed notch-type semiconductor filled with the above-mentioned adhesive pad. The paper used in this notch is made of China National Samples (CNS) (plus 297) and --------- 第83103775號專利申請案 申請專利範圍修正本(90年8月)No. 83103775 Patent Application Amendment of Patent Application Scope (August 1990) 申請專利範圍 1. 一種氮化碎系皿-ν族化合物半導體裝置,其具備有: 具有第1及第2主面的基板: I :-----襄 — I (請it-閲讀背面之注意事項再填寫本頁) 在該基板的第1主面上形成包含η型氮化蘇系冚-V族化合物半導體層,及ρ型氮化鎵系皿-ν族化合物 半導趑層的半導體層合構造; 接在該η型半導體層而形成的第1電極:及接在 該Ρ型半導趑層而形成第2電極;該第2電極具有透 光性’由包含鎳或鎳及金之金屬材料所形成,且與該ρ型 半導體層形成歐姆接觸》 2.如申請專利範圍-第1項之裝置,上述裝置發出的光能 從該基板的第1主面來觀察· 3 如申請專利範圍第1項之裝置;·第2電極是由遠接該 Ρ型半導體層而形成的鎳層,與在其上形成的金層所 搆成的。 4.如申請專利範团第1項之裝置,第2電極為具有〇.〇〇 j μπ至1 μιη的厚度· 5·如申請專利範圍第1或3或4項之裝置,上述裝置含 有以該基板的第2主面來支持該裝置的鉛框· 6·如申請專利範圍第1項之裝置,與第2電極作電氣性 的接續含有為了與線黏合的黏合墊· 線 7·如申锖_專利範圍第6項之裝置,該黏合墊是單獨由金、 或含禽、或不含鋁或鉻的至少2種以上的金屬所構成 _ 的金屬材料· 經濟部中央揉準局負工消費合作社印製 8. 如申請專利範团第6項之裝置,〜該黏合墊是由金與鈦、 鎳、銦及金白所構成,含有至少1種金屬的金屬材料 所形成。 9. 如申請專利範圍第6項之裝置,該黏合墊係與第2電 極同一材料所形成。 10. 如申請專利範圍第6項之裝置,該黏合墊係由與第2 電極直接連接的錄層’及在其上形成的金層所形成的· 11. 如申請專利範圍第6項之裝置,第2電極是ρ型半導 趙層的表面具有扃部性的露出之缺口部,在該缺口部 充填著上述黏合墊· 本紙張尺度逍用中國困家揉率(CNS ) A4说格(210X297公釐) 4〇3945申請專利範圍Scope of patent application 1. A nitride-based system-v-group compound semiconductor device, comprising: a substrate having first and second main surfaces: I: ----- Xiang— I (please read- Please fill in this page again.) On the first main surface of the substrate, a semiconductor including an n-type thallium nitride-based rhenium-V compound semiconductor layer and a p-type gallium nitride-based semiconductor-v-group semiconductor semiconducting rhenium layer is formed. Laminated structure; a first electrode formed by being connected to the n-type semiconductor layer; and a second electrode being formed by being connected to the p-type semiconductor layer; the second electrode is transparent; It is made of metal material and forms ohmic contact with the p-type semiconductor layer. "2. For the device in the scope of patent application-item 1, the light emitted by the device can be observed from the first main surface of the substrate. The device of the first scope of the patent; the second electrode is composed of a nickel layer formed remotely from the P-type semiconductor layer and a gold layer formed thereon. 4. For the device of the first patent application group, the second electrode has a thickness of 0.0000 μ μ to 1 μm. 5. For the device of the first or third or fourth patent application, the above device contains The second main surface of the substrate supports the lead frame of the device. 6. Like the device in the scope of the patent application, the electrical connection to the second electrode includes a bonding pad for bonding to the wire.锖 _The device in the scope of patent No. 6, the adhesive pad is composed of at least two kinds of metals including gold, poultry, or no aluminum or chromium. _ Metal materials · Central Ministry of Economic Affairs Printed by a consumer cooperative. 8. If the device of the patent application group No. 6 is used, the bonding pad is formed of a metal material consisting of gold and titanium, nickel, indium, and gold and white, and contains at least one metal. 9. As for the device in the scope of the patent application, the adhesive pad is formed of the same material as the second electrode. 10. If the device in the scope of the patent application is applied for, the adhesive pad is formed by the recording layer directly connected to the second electrode and the gold layer formed thereon. 11. If the device in the scope of the patent application is applied for The second electrode is an exposed notch with a palatal surface on the surface of the p-type semiconducting Zhao layer, and the notch is filled with the above-mentioned adhesive pad. 210X297 mm) 4 0945 patent application scope 經濟部中夬橾準局貝工消费合作社印震 2 -如申請專利範圍第I〗 電極更強,連結p型半導裝^置,該黏合墊是與比第2 13·如申請專利範圍第12項之體/的金屬材料所形成的。 的鋁、或鉻、鋁及金所構成:置’該黏合墊是從由單獨 屬所構成的金屬材料。構成群組之中選擇至少2種金 14·如申睛專利範圍第6項 第1電極最遠的位置之聚置’該黏合塾是配置在距 15·如申請專利範圍第1項之萝¥ a . . H 16 t ΐ所形成的保護膜來“ ί 2 ; ί透0且絕緣性的 〗氧化鋁、氧化鈦或氮化矽來裝开严/保護膜係由氧化矽、 17.如申請專利範圍第15項之%%成。 極的表面。 教置 18·如申請專利範圍第6項之穿署 材料來形成的保護膜,覆第緣 19.如申請專利範圍第蓋者第2電極與黏合塾。 Μ氧化紹、氧化欽或氣化頁石夕之/形置成保錢疋由氧化石夕 利範圍第18項之裝置,保護膜覆蓋著第1 21.種系IE-V族化合物半導體裝置的 具有第i及第2主面的基板…在該基板方的法 形成提巧包含有η型氮化鎵系皿_¥族化合物 1及ρ型氮化鎵系!Π_ν族化合物半導體層的半 ,層合構造之氮化鎵系族化合物半導體發光裝 置, 連接在該p型半導體層含鎳或鎳及金之金屬材 層; ,給予該金屬材料層4001以上溫度冶煉,達成與▲ 半導髗層的歐姆接觸,因此,提供與該第2半導體‘層 直接接觸的歐姆電極。 一種氮化鎵系m-v族化合物半導體裝置;其具備有 具有第1及第2主面的基板; 該基板之主面形成η型氮化鎵系皿-V族化合物— 保護膜覆蓋著第i電 具有透明且絕緣性的 電 第 半 導 料 {請先閲讀背面之注^^項再填寫本頁) 22 本紙張尺度逋用中國國家搞率(CNS ) Α4规格(210X297公釐) 403945 ----—申請專利範圍 A8 B8 C8 D8 經濟部中央榡率局員工消費合作社印装 導體層及 體層合構造 該η型半導體層上連接形成第1電極; 連接在該ρ型半導體層而形成的第2電極; 第1電極係由含鈦、鋁或金等組合金屬材料所形 成’且與該Ν型半導體層形成歐姆接觸。 申請專利範圍第22項之裝置,該第i電極是由直接 連接在該η型半體層而形成的鈦層、及鋁層,或金層 所形成。 24·,申請專利範圍第22項之裝置,該第1電極是由直接 接在該η型半導體而形成的鈦層、在該鈦層上形成的 銘層、及該鋁層上形成的金層所構成。 •如申請專利範圍第22項之裝置,該第丨電極是包含鈦 及紹戶^構成的金屬材料所形成的第1膜,及在該第1 膜上形成具有比鋁更高熔點之高熔點金屬材料所形成 的第2膜。 ^6·如申請專利範圍第25項之裝置,該第2膜包含鈦。 •如申請專利範圍第25項之裝置,該第2膜是由金、鈦、 及/或鎳所構成。 28 =申請專利範圍第22項之裝置基板的第2主面 持該裝置的鉛框。 29·=申請專利範圍第22項之裝置,與該第2電極做電 性的接續’而含有與黏合線黏合的黏合墊。 〇.=申請專利範圍第29項之裝置,該黏合墊配置於距 第1電極最遠的位置。 31 ‘t ί請專利範圍第22項之裝置,該第2電極是以含鎳 及金的金屬材料所形成。 32.—種氮化鎵系m_v族化合物半導體裝置的製造方法: 具有第I及第2主面的基板,並在該基板的第 上形成提供包含有n型氮化鎵系皿_v族化合物 Ϊ體層及Ρ型氮化鎵系πι-v族化合物半導體層的丰 體層合構造; ® j τ 連接在該η型半導體層而形成包含鈦及鋁或與 P型氮化鎵系ΙΠ - V族化合物半導體層的半導 支 氣 該 半 導 金 ----------------11¾ -------^ I (請先聞讀背面之注意事項再填寫本頁) 本紙張尺度逍用中國國家揉準(CNS ) A4規格(210X297公釐) 403945 Α8 Β8 C8 D8 π、申請專利範圍 經濟部中央棣準局貝工消費合作社印策 組合的金屬材料層; 予以該金屬材料層400。(:以上溫度冶煉,達成與 該η型半導體屬的歐姆接觸,因而提供該〇型半導想 層的歐姆電極。 33. =申請專利範圍第32項之方法,構成歐姆電極的金屬 包含直接接在該η型半導體層上而形成的鈦層、 及在其上形成的鋁層,及/或金層。 34. 種氮化鎵系ΠΙ-V族化合物半導體裝置;其具備有: 具有第1及第2主面的基板,在該基板的第1主 面上形成含有η型氮化鎵系冚-V族化合物半導體 層,及Ρ型氮化鎵系M_V族化合物半導體層的半導體 層合構造; 連接在該η型半導體層而形成第丨歐姆電極; 接在該ρ型半導體層而形成第2歐姆電極; y 該第1電極係由含鈦、鋁或金等组合金屬材料所 形成’且與該N型半導體層及歐姆接觸; 導體層而形成第2電極,該第2電極由包含錄或 鎳及金之金屬材料所形成,且與該ρ型半導體層 姆接觸。 35. 如申請專利範圍第34項之裝置,第1歐姆電極是由直 接接在該η型半導體層而形成的鈦層、在該鈦層上形 成的紹層、及該鋁層上形成的金層所構成。 36. 如申請專利範圍第35項之裝置,該第2電極是由直接 接在該ρ型半導體層而形成的鎳層,及在該鎳層上形 成的金層所構成。 37. 如申請專利範圍第36項之裝置,與該第2電極做電氣 性的接續,而含有與黏合線黏合之黏合墊。 3 8.如申請專利範圍第37項之裝置,基板的第1主面為方 形’該黏合墊配置於第2電極的第1角落,第1電極 配置於含第1角落的該方形對角線上之η型半導體層 的角落。 39_如申請專利範圍第38項之裝置,該黏合墊是由直接與 第2電極接上而形成的鎳層,及該鎳層上形成的金屬、 (請先閱讀背面之注項再填寫本頁) 訂 本紙張尺度逋用中國國家揉準(CNS ) Α4規格(210X297公釐) 403945申請專利範圍Yinzheng 2 of Beihai Consumer Cooperative, Ministry of Economic Affairs of the People's Republic of China-If the scope of the patent application is No. I: The electrode is stronger and connected to the p-type semiconducting device. Form 12 body / metal material. Made of aluminum, or chromium, aluminum, and gold: the bonding pad is made of a metal material composed of a separate metal. Select at least two kinds of gold in the composition group. 14 · The most remote position of the electrode in the 6th item of the patent scope of the patent application. The adhesive is arranged at a distance from 15 · The first item of the patent application scope. a.. H 16 t ΐ formed protective film to "ί 2; ί 0 and insulating〗 alumina, titanium oxide or silicon nitride to install strict / protective film is made of silicon oxide, 17. if applied % Of the patent scope of 15%. The surface of the electrode. Teaching set 18. If the application of the patent scope of the 6th scope of the protective film formed by covering materials, cover the edge 19. If the patent scope of the cover of the second electrode Adhesive 塾 Μ 绍 绍 绍 钦 钦 钦 氧化 氧化 氧化 氧化 氧化 形 形 形 形 形 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 形 形 形 氧化 形 形 形 形 形 形 形 形 形 疋 疋 疋 疋 疋 疋 疋 疋 氧化 氧化 氧化 氧化 范围 范围 范围 范围 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 保护 保护 保护 保护 保护 保护 保护 保护 The protective film covers No. 1 21. Species IE-V Group A substrate of a semiconductor device having i-th and second main surfaces ... The method of forming on this substrate side includes an n-type gallium nitride-based compound _ ¥ group compound 1 and a p-type gallium nitride-based compound semiconductor layer. A half-layered gallium nitride-based compound semiconductor light-emitting device connected to the p-type semiconductor layer containing nickel or nickel and gold A metal material layer; smelting the metal material layer at a temperature of 4001 or more to achieve ohmic contact with the ▲ semiconductor layer; therefore, an ohmic electrode in direct contact with the second semiconductor 'layer is provided. A gallium nitride-based mv group compound A semiconductor device comprising a substrate having first and second main surfaces; the main surface of the substrate is formed with an n-type gallium nitride-based compound—a group V compound—the protective film covers Semi-conductor {Please read the note ^^ on the back before filling this page) 22 This paper size uses China National Engagement Rate (CNS) Α4 size (210X297 mm) 403945 ----— Applicable patent scope A8 B8 C8 D8 Printed conductor layer and bulk laminate structure of the Consumer Cooperative of the Central Bureau of the Ministry of Economic Affairs. The n-type semiconductor layer is connected to form a first electrode. The second electrode is connected to the p-type semiconductor layer. The first electrode is composed of It is formed of a combination of metal materials such as titanium, aluminum, or gold, and forms an ohmic contact with the N-type semiconductor layer. For the device in the scope of patent application No. 22, the i-th electrode is formed by directly connecting to the n-type half-body layer. A titanium layer, an aluminum layer, or a gold layer is formed. 24. The device of claim 22 in the scope of patent application, the first electrode is a titanium layer formed by directly connecting to the n-type semiconductor, and the titanium layer is formed on the titanium layer. It consists of a layer of gold formed on the aluminum layer and a layer of gold formed on the aluminum layer. • For the device in the scope of patent application No. 22, the first electrode is a first film formed of a metal material composed of titanium and metal. And a second film formed on the first film with a high melting point metal material having a higher melting point than aluminum. ^ 6. If the device of the scope of patent application is applied for, the second film contains titanium. The device of the scope of the patent, the second film is made of gold, titanium, and / or nickel. 28 = The second main surface of the device substrate in the 22nd scope of the patent application holds the lead frame of the device. 29 · = The device of the scope of application for patent No. 22, which is electrically connected to the second electrode 'and contains an adhesive pad which is adhered to the adhesive wire. 〇. = Apparatus No. 29 in the scope of patent application, the adhesive pad is arranged at the farthest position from the first electrode. 31 ‘t The device according to item 22 of the patent, wherein the second electrode is formed of a metal material containing nickel and gold. 32. A method for manufacturing a gallium nitride-based m_v group compound semiconductor device: A substrate having first and second main surfaces, and an n-type gallium nitride-based v-group compound provided on the substrate is formed on the substrate. Carcass layer and p-type gallium nitride-based π-v group compound semiconductor layer with rich body lamination structure; ® j τ is connected to the n-type semiconductor layer to form titanium and aluminum or P-type gallium nitride series Π-V The semiconducting branch of the compound semiconductor layer The semiconducting gold ---------------- 11¾ ------- ^ I (Please read the precautions on the back before filling in this (Page) This paper is based on the Chinese National Standard (CNS) A4 (210X297 mm) 403945 Α8 Β8 C8 D8 π, the scope of patent application for the metal material layer of the Central Government Standards Bureau Beige Consumer Cooperative Co., Ltd .; The metal material layer 400. (: The smelting at the above temperature achieves ohmic contact with the n-type semiconductor, so an ohmic electrode of the 0-type semiconducting layer is provided. 33. = Method of applying for item 32 of the patent scope, the metal constituting the ohmic electrode includes a direct contact A titanium layer formed on the n-type semiconductor layer, an aluminum layer formed on the n-type semiconductor layer, and / or a gold layer. 34. A gallium nitride-based group III-V compound semiconductor device; And a second main surface of the substrate, a semiconductor laminated structure including an n-type gallium nitride-based 冚 -V compound semiconductor layer and a p-type gallium nitride-based M_V group compound semiconductor layer is formed on the first main surface of the substrate Connected to the n-type semiconductor layer to form a first ohmic electrode; connected to the p-type semiconductor layer to form a second ohmic electrode; y the first electrode is formed of a combination of metal materials including titanium, aluminum, or gold 'and A second electrode is formed in contact with the N-type semiconductor layer and the ohmic conductor layer, and the second electrode is formed of a metal material including lithium or nickel and gold, and is in contact with the p-type semiconductor layer. Device of scope item 34, 1st The electrode is composed of a titanium layer formed directly on the n-type semiconductor layer, a Shao layer formed on the titanium layer, and a gold layer formed on the aluminum layer. Device, the second electrode is composed of a nickel layer formed directly on the p-type semiconductor layer, and a gold layer formed on the nickel layer. The 2 electrodes are electrically connected, and include bonding pads that are bonded to the bonding wire. 3 8. If the device in the scope of patent application No. 37, the first main surface of the substrate is square 'The bonding pad is arranged on the second electrode 1 corner, the first electrode is disposed at the corner of the n-type semiconductor layer on the square diagonal line including the first corner. 39_ If the device of the scope of patent application No. 38, the bonding pad is directly connected to the second electrode The nickel layer formed, and the metal formed on the nickel layer, (please read the note on the back first and then fill in this page) The paper size of the paper is based on China National Standard (CNS) A4 specification (210X297 mm) 403945 application Patent scope 所構成。 4〇ΐ:ϊί=Γ37項之裝置,該"電… 半導體層的部八主 电極具有露屮 該缺口部,該黏合墊以部’該黏合墊充填 或鎳之第1層,與形成在 ^厂半導體層的鉻 41 _如申請專利範圍第:成項在之該/署2層目上,金層。 42=置的透明且絕緣性膜1有實質上全面覆 2.如申請專利範圍第41項之裝置膜 主面支持該裝置的鉛框。t 3_=申請專利範圍第42項之裝置 44 Z Ϊ觀察該裝置所發出的光。 〜本1主面 t申請專利範圍第1或34項之裳f , Α由 4 族化合物半導體 鎮、Ρ型氮化= m_V族化合物半導雜層是形成摻雜:之n二氡 具有在該基板的第 從該基板的第J主 蓋 (請先聞讀背面之注意事項再填寫本頁> 化 訂· 經濟部中央標率局貝工消费合作社印製 本紙張尺度逋用中國國家揉车(CNS )八4规格(210X297公釐)Made up. 4〇ΐ: ϊί = Γ37 item of device, the " electrical ... semiconductor layer of the eight main electrodes have exposed the notch portion, the bonding pad is filled with the portion 'the bonding pad or the first layer of nickel, and formed Chromium 41 in the semiconductor layer of ^ factory _ If the scope of patent application: the item is on the 2 layer of this / department, the gold layer. 42 = The transparent and insulating film 1 is provided with a substantially full coverage. 2. The device film of item 41 in the scope of patent application supports the lead frame of the device on the main surface. t 3_ = Apparatus No. 42 in the scope of patent application 44 Z Ϊ Observe the light emitted by this device. ~ The main surface t of this application applies for item 1 or 34 of the patent scope, Α is composed of a group 4 compound semiconductor town, P-type nitride = m_V compound semiconductive heterolayer is doped: The main cover of the substrate is the Jth main cover of the substrate (please read the precautions on the back before filling in this page)> Customization · The Central Standards Bureau of the Ministry of Economic Affairs printed this paper size and used the Chinese national kneading car (CNS) 8 4 specifications (210X297 mm) 第83103775號專利申請案 申請專利範圍修正本(90年8月)No. 83103775 Patent Application Amendment of Patent Application Scope (August 1990) 申請專利範圍 1. 一種氮化碎系皿-ν族化合物半導體裝置,其具備有: 具有第1及第2主面的基板: I :-----襄 — I (請it-閲讀背面之注意事項再填寫本頁) 在該基板的第1主面上形成包含η型氮化蘇系冚-V族化合物半導體層,及ρ型氮化鎵系皿-ν族化合物 半導趑層的半導體層合構造; 接在該η型半導體層而形成的第1電極:及接在 該Ρ型半導趑層而形成第2電極;該第2電極具有透 光性’由包含鎳或鎳及金之金屬材料所形成,且與該ρ型 半導體層形成歐姆接觸》 2.如申請專利範圍-第1項之裝置,上述裝置發出的光能 從該基板的第1主面來觀察· 3 如申請專利範圍第1項之裝置;·第2電極是由遠接該 Ρ型半導體層而形成的鎳層,與在其上形成的金層所 搆成的。 4.如申請專利範团第1項之裝置,第2電極為具有〇.〇〇 j μπ至1 μιη的厚度· 5·如申請專利範圍第1或3或4項之裝置,上述裝置含 有以該基板的第2主面來支持該裝置的鉛框· 6·如申請專利範圍第1項之裝置,與第2電極作電氣性 的接續含有為了與線黏合的黏合墊· 線 7·如申锖_專利範圍第6項之裝置,該黏合墊是單獨由金、 或含禽、或不含鋁或鉻的至少2種以上的金屬所構成 _ 的金屬材料· 經濟部中央揉準局負工消費合作社印製 8. 如申請專利範团第6項之裝置,〜該黏合墊是由金與鈦、 鎳、銦及金白所構成,含有至少1種金屬的金屬材料 所形成。 9. 如申請專利範圍第6項之裝置,該黏合墊係與第2電 極同一材料所形成。 10. 如申請專利範圍第6項之裝置,該黏合墊係由與第2 電極直接連接的錄層’及在其上形成的金層所形成的· 11. 如申請專利範圍第6項之裝置,第2電極是ρ型半導 趙層的表面具有扃部性的露出之缺口部,在該缺口部 充填著上述黏合墊· 本紙張尺度逍用中國困家揉率(CNS ) A4说格(210X297公釐) D8 申請專利範圍 2*如申請專利範圍苐u項之裝置,該黏合墊是與比第2 電極更強,連結p型半導體層的金眉材料所形成的/ 3.如申請專利範圍第12項之裝置,該黏合墊是從由單招 的雜、或鉻、鋁及金所搆成群組之中選擇至少2種 屬所構成的金眉材料。 1 4·如申請專利範圍第6項之裝置,該黏合墊是配置在距 第〗電極最遠的位置· 1 5 ’如申请專利範園第1項之裝置,具有透明且絕緣性的 材料所形成的保護膜來復蓋第2電極· 16·如申請專利範圍第15項.之裝置,保護骐係由氧化硬' 氧化鋁、氧化鈦或氮化矽來形成· Γ7·如申請專利範圍第15項之裝置,保護膜復蓋著第1電 極的表面β 18.如申請專利範圍第6項之裝置,.具有透明且絕緣性的 材料來形成的保護膜,復蓋著第2電極與點合整。 1 9·如申請專利範圍第1 8項之裝置,保護膜是由氧化矽、 氧化鋁、氧化鈦或氮化矽來形成· 20. 如申請專利範圍第18項之裝置,保護膜復蓋著第1電 極的表面。 21. —種氮化鎵系皿-V族化合物半導體裝置的製造方法: 具有第1及第2主面的基板,而且在該基板的第 1主Φ形成提供包含·有η型氮化鎵系冚-ν族化合物半 導链層及ρ型氣化錄系Π-V族化合物半導趙層的半導 體層合採造之氮化嫁系皿-V族化合'物半導短發光裝 置: , " 經濟部中夬梂準局貝工消費合作社印製 連接在該Ρ型半導想層含絲或鎳及金之金屬材料 層: 給予該金屬材料層4 0 〇 ec以上溫度冶棟,達成與ρ创 半導禮層的歐均接觸’因此’提供與該p型半導趙房 直接接觸的透光性歐姆電極。 . a " 22. —種氮化鎵系瓜-V族化合物半導髅裝置;其具備有: 具有第1及第2主面的基板,在該基板的第1主 面上形成含有η型氮化錄系皿-V族化合物半導_妓 -2- 本紙張尺度迫用中國國家揉準(CNS ) Α4说格(210 X 297公釐) 申請專利範圍 A8 B8 C8 D8 經濟部中央捸率局貝工消*合作社印装 】合::型氮化鎵系瓜-乂族化合物丰導“的半導體 連接在該η型半導體層而形成第1電極; 接在該ρ型半導體層而形成第2電極; S Ϊ j 極係由含飲、銘或金等组合而成之第】金 ,屬材料所形成,且與該>1型半導體層成歐姆接觸; ,具有透光性,且係由包含錄或線及金之第 2金屬材料所形成,且與該p型半導體成歐姆接觸。 23.如申請專利範圍第22項之裝置,第i歐姆電極是由直 接接.在該η型半導过層而形成的鈦層 '在該鈦層上形 成.的IS層、及該链層上形成的金層所構成· 24·如申請專利範圍第23項之裝置,該第2電極是由直接 接在該P型半導體層而形成的鎳層,.及在該鎳層上 成的金層所構成· 25. 如申猜專利範圍第24項之裝置,與該第2電極做電 性的接讀,而含有與黏合線黏合之黏合墊。 26. 如申請專利範圍第27項之裝置,基板的第1主面為方 形,該黏合墊配置於第2電極的第1角落,第1電極 配置於含第I角落的該方形對角線上之η型半導體層 的角落* 27. 如申請專利範圍第26項之裝置,玆黏合墊是由直接 第2電極接上而形成的鎳層,及該鎳層上形成的金肩 所構成· 28. =申锖專利範圍第25項之裝,該苐2電極具有露 u Ρ型半導體層的部分表面之缺口部,玆黏合墊充 部,铉黏合墊具僙直接連接Ρ型半導玆層的鉻 或鎳之第1層’與形成在該第2層上的金層β 29. 如申锖專利範圍第28項之裝置,具有贫貧上全面復蓋 該裝置的透明且絕緣性的保護膜· 30. 如申請專利範团第29項之裝置 主面支持玆裝置的鉛框· 31.如申請專利範圍第3〇項之裝置 可以觀秦該裝置所發出的光。 -- - (诗4«讀背面之注意事項再填寫本頁) 具有在該基板的苐 從玆基板的第】主 氣 與 出 2 面 .IT 铼 -3- 本紙張尺度逍用中國國家揉準(CMS )八4規格(2丨0><297公嫠) I .1 I AB,CD v\. 六、申請專利範圍 32. 如申請專利範圍第1或22項之裝置.,-其中p型氮化鎵 系皿-V族化合物半導趙層是形成接雜鎂之p型GaN· 33. 如申清專利托圍第 22 項之裝置,其中..η.型.氮化 錄系瓜-V私化合物半導趙層是形成彳參雜石夕之η型 GaN · ---^--------裝-----Ί訂;------線! Λ « (讀先閲讀背面之注意事項再填寫本頁) 經濟部中央橾準局貝工消費合作社印裂 本紙浪尺度逍用中國國家揉準(CNS ) Α4说格(210X297公釐)Scope of patent application 1. A nitride-based system-v-group compound semiconductor device, comprising: a substrate having first and second main surfaces: I: ----- Xiang— I (please read- Please fill in this page again.) On the first main surface of the substrate, a semiconductor including an n-type thallium nitride-based rhenium-V compound semiconductor layer and a p-type gallium nitride-based semiconductor-v-group semiconductor semiconducting rhenium layer is formed. Laminated structure; a first electrode formed by being connected to the n-type semiconductor layer; and a second electrode being formed by being connected to the p-type semiconductor layer; the second electrode is transparent; It is made of metal material and forms ohmic contact with the p-type semiconductor layer. "2. For the device in the scope of patent application-item 1, the light emitted by the device can be observed from the first main surface of the substrate. The device of the first scope of the patent; the second electrode is composed of a nickel layer formed remotely from the P-type semiconductor layer and a gold layer formed thereon. 4. For the device of the first patent application group, the second electrode has a thickness of 0.0000 μ μ to 1 μm. 5. For the device of the first or third or fourth patent application, the above device contains The second main surface of the substrate supports the lead frame of the device. 6. Like the device in the scope of the patent application, the electrical connection to the second electrode includes a bonding pad for bonding to the wire.锖 _The device in the scope of patent No. 6, the adhesive pad is composed of at least two kinds of metals including gold, poultry, or no aluminum or chromium. _ Metal materials · Central Ministry of Economic Affairs Printed by a consumer cooperative. 8. If the device of the patent application group No. 6 is used, the bonding pad is formed of a metal material consisting of gold and titanium, nickel, indium, and gold and white, and contains at least one metal. 9. As for the device in the scope of the patent application, the adhesive pad is formed of the same material as the second electrode. 10. If the device in the scope of the patent application is applied for, the adhesive pad is formed by the recording layer directly connected to the second electrode and the gold layer formed thereon. 11. If the device in the scope of the patent application is applied for The second electrode is an exposed notch with a palatal surface on the surface of the p-type semiconducting Zhao layer, and the notch is filled with the above-mentioned adhesive pad. 210X297 mm) D8 Patent application scope 2 * If the device of patent application scope item u, the adhesive pad is formed with a gold eyebrow material that is stronger than the second electrode and connects to the p-type semiconductor layer / 3. In the device of the range 12, the bonding pad is a golden eyebrow material composed of at least two kinds from a group consisting of a single mover, or a group consisting of chromium, aluminum, and gold. 1 4 · As for the device in the 6th scope of the patent application, the adhesive pad is arranged at the farthest position from the electrode. 1 5 'As in the 1st device in the patent application park, the material is transparent and insulating. The protective film is formed to cover the second electrode. 16. The device such as the scope of patent application No. 15. The protection system is formed of hard oxide 'alumina, titanium oxide or silicon nitride. Γ7. In the device of 15 items, the protective film covers the surface of the first electrode β 18. For the device of item 6 in the scope of patent application, a protective film made of a transparent and insulating material covers the second electrode and dots Put together. 19 · If the device in the scope of patent application No. 18, the protective film is formed of silicon oxide, alumina, titanium oxide or silicon nitride. 20. If the device in the scope of patent application No. 18, the protective film is covered The surface of the first electrode. 21. A method for manufacturing a gallium nitride-based compound-V compound semiconductor device: a substrate having first and second main surfaces, and a first main Φ formed on the substrate to provide and include an n-type gallium nitride system冚 -ν group semiconductor semiconducting chain layer and p-type gasification recording system Π-V group semiconductor semiconducting layer of the semiconductor layer of the nitride layered plate-V compound's semiconductive short light-emitting device:, " Printed by the Macao Consumers Cooperative of China ’s Ministry of Economic Affairs, the P-type semiconducting layer is connected to the metal material layer containing silk or nickel and gold: The metal material layer is given a temperature of more than 400 ° C, and reached The contact with Ou Jun of the ρ wound semiconducting layer 'hence' provides a light-transmitting ohmic electrode in direct contact with the p-type semiconducting Zhaofang. a " 22. A gallium nitride-based melon-V compound semiconducting device; comprising: a substrate having first and second main surfaces; and an n-type containing substrate formed on the first main surface of the substrate. Nitrile Recorder-V Compound Semiconductor_Prostitute-2- This paper size is forced to use the Chinese National Standard (CNS) A4 grid (210 X 297 mm). The scope of patent application A8 B8 C8 D8 Central Ministry of Economic Affairs Printing by the local co-operative consumer cooperatives] :: A gallium nitride-based melon-titanium compound semiconductor is connected to the n-type semiconductor layer to form a first electrode; it is connected to the p-type semiconductor layer to form a first electrode 2 electrode; S Ϊ j pole is made of a combination of yin, ming or gold, etc.] gold, which is formed of materials and is in ohmic contact with the > type 1 semiconductor layer; It is formed by the second metal material including NOR wire and gold, and it is in ohmic contact with the p-type semiconductor. 23. For the device in the scope of patent application No. 22, the i-ohmic electrode is directly connected. In the n-type A titanium layer formed by semiconducting layers is formed of an IS layer formed on the titanium layer and a gold layer formed on the chain layer. 24 · If the device in the scope of patent application No. 23, the second electrode is composed of a nickel layer directly connected to the P-type semiconductor layer, and a gold layer formed on the nickel layer. The device in the scope of the patent No. 24 is electrically connected to the second electrode, and contains a bonding pad bonded to the bonding wire. 26. For the device in the scope of the patent No. 27, the first main surface of the substrate is square The adhesive pad is disposed at the first corner of the second electrode, and the first electrode is disposed at the corner of the n-type semiconductor layer on the square diagonal line including the first corner * 27. If the device of the scope of patent application No. 26, The adhesive pad is composed of a nickel layer formed by directly connecting the second electrode, and a gold shoulder formed on the nickel layer. 28. = The installation of the 25th item of the patent scope of the application, the 苐 2 electrode has an exposed type. The notch portion of the surface of the semiconductor layer is a bonding pad filling portion. The bonding pad has a first layer of chromium or nickel that directly connects the P-type semiconductor layer and the gold layer formed on the second layer. Β 29 . For example, the device in the 28th area of the patent application has a transparent and insulation covering the device in all aspects. Protective film 30. For example, the main frame of the 29th device of the patent application group supports the lead frame of the device. 31. The 30th device of the patent application scope can view the light emitted by the device.--( Verse 4 «Read the notes on the back side and fill out this page again.] The main part of the substrate has the main power and two sides of the substrate. IT 铼 -3- This paper is based on the Chinese National Standards (CMS). 4 specifications (2 丨 0 > < 297 gong) I.1 I AB, CD v \. VI. Patent application scope 32. Such as the device of patent application scope item 1 or 22, where p-type gallium nitride The Titanium-V compound semiconducting Zhao layer is a p-type GaN doped with magnesium. 33. Such as the device entrusted by Shenqing Patent No. 22, where .. type. The semi-conducting Zhao layer is an η-type GaN that forms the ginseng complex stone xi. Λ «(Read the precautions on the back before filling in this page) Printed by the Central Laboratories Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives, the paper scale is free to use Chinese National Standards (CNS) Α4 grid (210X297 mm)
TW083103775A 1993-04-28 1994-04-27 Gallium nitride based III - V group compound semiconductor device having an ohmic electrode and producing method thereof TW403945B (en)

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JP12489093A JP2803742B2 (en) 1993-04-28 1993-04-28 Gallium nitride-based compound semiconductor light emitting device and method for forming electrode thereof
JP12931393A JP2748818B2 (en) 1993-05-31 1993-05-31 Gallium nitride based compound semiconductor light emitting device
JP20727493A JP2783349B2 (en) 1993-07-28 1993-07-28 Electrode of n-type gallium nitride-based compound semiconductor layer and method of forming the same
JP23468593A JP2770717B2 (en) 1993-09-21 1993-09-21 Gallium nitride based compound semiconductor light emitting device
JP23468493A JP2697572B2 (en) 1993-09-21 1993-09-21 Gallium nitride based compound semiconductor light emitting device

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