490719 A7 B7 五、發明說明（1 ) 發明背景 本發明係關於一種電感耦合R F (射頻）電漿源，其 在以濺鍍，CVD等形成一膜時，使用在由可使用於半導 體和電子材料之如矽，鎵，石英，玻璃等基底之表面上， 或使用在基底受到蝕刻時，或使用在形成在基底表面之中 性氧化膜或在基底上不要之物質之移_。 圖1爲此型之習知裝置之例，其中電漿室B整合且連 續提供在一真空室A上。環繞此電漿產生室B之側壁由如 石英之材料構成，藉以傳輸電磁波。在電漿產生室B之外 週邊上安排——轉天線線圈C，包含如圖2所示之金屬管 或桿。R F電源D連接至天線線圈C之一端，而另一端接 地，因此R F電源可供應至天線線圈C。在電漿產生室B 之頂端上提供有一頂板（或蓋）E。 經濟部智慧財產局員工消費合作社印製 真空泵F和氣體導入機構G安裝至真空室A，因此， 在真空室A內之壓力可設定爲一選擇値。一載入/釋載部 份I乃提供至真空室A以取出或置入如工件之晶圓之基底 Η。在真空室A中，用以安裝晶圓Η之一晶圓保持器J乃 安裝在相對於在電漿產生室Β之頂端上之頂蓋Ε。藉此構 造以使R F電源可從R F電源Κ依需要應用至晶圓Η。 在圖1之裝置中，用以濺鍍之靶可安裝至在電漿產生 室Β之頂端上之頂蓋Ε，其相對於晶圓保持器j。頂板ε 可連接至電源J，以供應直流電或R F電源。 關於另一習知技藝，已知如圖3所示，其中安裝多轉 天線線圈以取代如圖2之一轉天線線圈。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -4 - 490719 A7 __B7 _ 五、發明說明（2 ) 再者，在圖1所示之裝置中，已知之構造爲具有天線 線圈安排在電漿產生室內側。 (請先閱讀背面之注意事項再填寫本頁) 在以上述方式構成之習知裝置之操作中，如晶圓之基 底Η在晶圓保持器J上準備，氣體從氣體導入機構G導入 真空室A，和壓力設定至預定値。而後，RF電源從RF 電源供應器D供應至天線線圈C。R F.電場由在電漿產生 室B中之週邊方向中之電感耦合感應，藉以產生電漿。在 此狀況下，應用R F偏壓電源至晶圓保持器J會因爲此偏 壓而加速在所產生電漿內之陽離子向著晶圓方向，且使陽 離子碰撞晶圓，而蝕刻晶圓表面或執行其它處理。 在使用一轉天線線圈之構造中，可在1 0和1 5 Μ Η z間達成匹配，且其構造簡單，但是如圖4所示，在 電漿和天線線圈間會發生電容耦合。由於此電容耦合，會 產生使在電漿中之陽離子向著天線線圈，亦即，相對於電 漿室壁加速之電場。此電場在R F導入部份上最強，且在 另一端接地附近變成幾乎爲零。結果，在R F導入部份附 近之電漿移向電漿室側壁，因此產生電漿密度之不平衡。 結果，會傷害在跨過晶圓表面處理時之均勻性。 經濟部智慧財產局員工消費合作社印製 另一方面，在使用多轉天線線圈之構造中，此構造變 成較爲複雜且同時會增加天線線圈之電抗，因此難以達成 工業頻率之13·56MHz之匹配。結果，需要降低頻 率，且關於無線電法令上，需要分別之執照，因此其較不 經濟且費時。 以此方式，在多轉天線線圈中亦會發生在天線線圈和 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） - 490719 A7 _____B7 ___ 五、發明說明（3 ) (請先閱讀背面之注意事項再填寫本頁) 電漿間之電容耦合，但是其可輕易採用如只安裝R F導入 部份在高電容耦合作用處，因爲多轉天線線圈可遠離電漿 室，或安裝在難以作用影響之處等之改善對策。 發明槪要. 因此，本發明之目的乃在提供一種電感耦合射頻電漿 源，其可藉由解決如上述習知技術之問題和消除產生在電 漿和天線線圈間之徑向電場而改善在基底處理中之不均勻 性。 爲了達成上述目的，依照本發明之電感耦合射頻電漿 源，用以產生使用電感耦合之射頻電漿，包含多數之一轉 天線線圈，每一天線線圈具有第一端沿電漿產生室之週邊 側壁連接至射頻電源，和第二端連接至接地電位，和天線 線圈以間隔安排在電漿產生室之縱軸方向中，和每——轉 天線線圈之第一端在週邊方向中以相等角度相互位移。 經濟部智慧財產局員工消費合作社印製 在本發明中，每——轉天線線圈沿電漿產生室之週邊 側壁之外側安排。當每——轉天線線圈沿電漿產生室之週 邊側壁之外側安排時，該電漿產生室之週編側壁由電磁波 傳輸型材料所構成。 當一轉天線線圈之數目爲二時，連接至射頻電源之每 ——轉天線線圈之第一端乃安排在電漿產生室之週邊側壁 之週邊方向中互相以1 8 0 °之角位移。當一轉天線線圈 之數目爲三時，連接至射頻電源之每——轉天線線圈之第 一端乃安排在電漿產生室之週邊側壁之週邊方向中互相以 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 490719 A7 B7 五、發明說明（4 ) 120°之角位移。而當一轉天線線圈之數目爲四時，連 接至射頻電源之每--轉天線線圏之第一端乃安排在電漿 產生室之週邊側壁之週邊方向中互相以90。之角位移。 連接至一轉天線線圈之一端之射頻電源可安裝成共同 提供至每一天線線圈之所有線圈。 在依照本發明上述之電感耦合射_電漿源中，介於天 線線圈和電漿間之徑向電場相關於裝置中央是相等的。在 電漿室中之電漿密度均勻，且可改善在跨過晶圓表面之處 理均勻性。 圖式簡單說明 圖1爲使用安裝有習知一轉天線線圈之電感耦合射頻 電漿源之電漿處理裝置之示意圖； 圖2爲圖1之一轉天線線圈； 圖3爲習知多轉天線線圈； 圖4爲由習知一轉天線線圈所產生之內部電場； 圖5爲使用依照本發明之電感耦合射頻電漿源之電漿 處理裝置之示意圖； 圖6爲在圖5之電感耦合射頻電漿源中之兩個一轉天 線線圈之相關佈局圖； 圖7爲由在圖5之電感耦合射頻電漿源中之兩個一轉 天線線圈所產生之內部電場圖， 圖8爲使用安裝有習知一轉天線線圈之電感耦合射頻 電漿源之蝕刻處理之量測例圖；和 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂： •線· 經濟部智慧財產局員工消費合作社印製 490719 A7 _B7五、發明說明（5 ) 圖9爲使用如圖5所示之依照本發明之電感耦合射頻 電漿源之蝕刻處理之量測例圖。 主要元件對照表 經濟部智慧財產局員工消費合作社印製 1 真 空 室 2 真 空 泵 3 氣 體 導 入 機 構 4 基 底 5 載 入 / 釋 載 部 份 6 晶 圓 保持 器 7 射 頻 電 源 8 電 漿 產 生 室 9 天 線 線 圈 10 射 頻 電 源 11 頂 板 A 真 空 室 B 電 漿 產 生 室 C 一 轉 天 線 線 圈 D 射 頻 電 源 E 頂 蓋 F 真 空 泵 G 氣 體 導 入 機 構 Η 基 底 I 載 入 / 釋 載 部 份 (請先閲讀背面之注意事項再填寫本頁)490719 A7 B7 V. Description of the invention (1) Background of the invention The present invention relates to an inductively coupled RF (radio frequency) plasma source. When forming a film by sputtering, CVD, etc., it is used in semiconductor and electronic materials. Such as silicon, gallium, quartz, glass, etc. on the surface of the substrate, or when the substrate is etched, or the use of neutral oxide film formed on the surface of the substrate or the removal of substances on the substrate. Fig. 1 is an example of a conventional device of this type, in which a plasma chamber B is integrated and continuously provided on a vacuum chamber A. The side wall surrounding the plasma generating chamber B is made of a material such as quartz, thereby transmitting electromagnetic waves. Arranged around the periphery of the plasma generating chamber B-the turning antenna coil C, which includes a metal tube or rod as shown in FIG. 2. The RF power source D is connected to one end of the antenna coil C and the other end is grounded, so the RF power source can be supplied to the antenna coil C. A top plate (or cover) E is provided on the top of the plasma generation chamber B. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The vacuum pump F and the gas introduction mechanism G are installed in the vacuum chamber A. Therefore, the pressure in the vacuum chamber A can be set as an option. A loading / unloading part I is provided to the vacuum chamber A for removing or placing a substrate Η of a wafer such as a workpiece. In the vacuum chamber A, a wafer holder J for mounting one of the wafers is mounted on the top cover E opposite to the top end of the plasma generation chamber B. This structure allows the RF power supply to be applied to the wafer from the RF power supply K as needed. In the apparatus of Fig. 1, a target for sputtering can be mounted to a top cover E on the top end of the plasma generating chamber B, which is opposite to the wafer holder j. The top plate ε can be connected to power source J to supply DC or RF power. Regarding another conventional technique, as shown in FIG. 3, a multi-turn antenna coil is installed instead of the one-turn antenna coil shown in FIG. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) -4-490719 A7 __B7 _ V. Description of the invention (2) The device shown in Fig. 1 is known to have an antenna coil arranged inside the plasma generating chamber. (Please read the precautions on the back before filling this page.) In the operation of the conventional device constructed as described above, if the substrate of the wafer is prepared on the wafer holder J, the gas is introduced into the vacuum chamber from the gas introduction mechanism G A, and the pressure is set to a predetermined value. Then, the RF power is supplied from the RF power supply D to the antenna coil C. R F. The electric field is induced by inductive coupling in the peripheral direction in the plasma generating chamber B, thereby generating a plasma. Under this condition, the application of RF bias power to wafer holder J will accelerate the cations in the generated plasma toward the wafer due to this bias, and cause the cations to collide with the wafer, and etch the wafer surface or perform Other processing. In the structure using a one-turn antenna coil, matching can be achieved between 10 and 15 Μ Η z, and the structure is simple, but as shown in Fig. 4, capacitive coupling occurs between the plasma and the antenna coil. Due to this capacitive coupling, an electric field is generated which accelerates the cations in the plasma toward the antenna coil, i.e., is accelerated relative to the plasma chamber wall. This electric field is the strongest at the R F introduction part, and becomes almost zero near the other end to ground. As a result, the plasma in the vicinity of the R F introduction part moves to the side wall of the plasma chamber, so that an imbalance in plasma density occurs. As a result, the uniformity during processing across the surface of the wafer may be compromised. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. On the other hand, in the structure using multi-turn antenna coils, this structure becomes more complex and at the same time increases the reactance of the antenna coils, so it is difficult to achieve a match of industrial frequency of 13.56MHz . As a result, the frequency needs to be reduced, and separate licenses are required for radio regulations, making them less economical and time-consuming. In this way, the multi-turn antenna coil will also occur in the antenna coil and the paper size applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm)-490719 A7 _____B7 ___ V. Description of the invention (3) (Please Read the precautions on the back before filling in this page) Capacitive coupling between plasmas, but it can easily be used. For example, only the RF lead-in part is installed at the high-capacity coupling, because the multi-turn antenna coil can be far away from the plasma chamber, or installed. Improvement measures where it is difficult to affect the impact. Summary of the invention. Therefore, the object of the present invention is to provide an inductively coupled RF plasma source, which can be improved by solving the problems of the conventional technology as described above and eliminating the radial electric field generated between the plasma and the antenna coil. Non-uniformity in substrate treatment. In order to achieve the above object, the inductively coupled RF plasma source according to the present invention is used to generate an RF plasma using inductive coupling, and includes a majority of antenna coils, each antenna coil having a first end along the periphery of the plasma generation chamber. The side wall is connected to the radio frequency power supply, and the second end is connected to the ground potential, and the antenna coil is arranged at a distance in the longitudinal axis direction of the plasma generation chamber, and the first end of each-turn antenna coil is at an equal angle in the peripheral direction. Mutual displacement. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In the present invention, each-turn antenna coil is arranged along the outer side wall of the peripheral wall of the plasma generation chamber. When each-to-antenna coil is arranged along the outer side wall of the plasma generation chamber, the peripheral side wall of the plasma generation chamber is composed of an electromagnetic wave transmission type material. When the number of one-turn antenna coils is two, the first end of each of the-turn antenna coils is arranged to be displaced at an angle of 180 ° from each other in the peripheral direction of the peripheral side wall of the plasma generating chamber. When the number of one-turn antenna coils is three, the first end of each-connected to the RF power supply is arranged in the peripheral direction of the peripheral side wall of the plasma generation chamber to each other in accordance with the Chinese national standard on this paper scale ( CNS) A4 specification (210 X 297 mm) 490719 A7 B7 5. Description of the invention (4) Angular displacement of 120 °. When the number of one-turn antenna coils is four, the first ends of each-turn antenna line connected to the RF power source are arranged at 90 to each other in the peripheral direction of the peripheral side wall of the plasma generating chamber. Angular displacement. An RF power source connected to one end of a turn antenna coil can be installed to provide all coils to each antenna coil in common. In the above inductively coupled plasma source according to the present invention, the radial electric field between the antenna coil and the plasma is equal to the center of the device. Plasma density is uniform in the plasma chamber and improves uniformity across the wafer surface. Brief Description of the Drawings Figure 1 is a schematic diagram of a plasma processing device using an inductively coupled RF plasma source equipped with a conventional one-turn antenna coil; Figure 2 is a one-turn antenna coil of Figure 1; and Figure 3 is a conventional multi-turn antenna coil Figure 4 is an internal electric field generated by a conventional one-turn antenna coil; Figure 5 is a schematic diagram of a plasma processing apparatus using an inductively coupled RF plasma source according to the present invention; Figure 6 is an inductively coupled RF electrical circuit in Figure 5 The related layout of the two one-turn antenna coils in the plasma source; Figure 7 is a diagram of the internal electric field generated by the two one-turn antenna coils in the inductively coupled RF plasma source of FIG. 5, and FIG. Know the measurement example of the etching process of the inductively coupled RF plasma source of the one-turn antenna coil; and this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back first Fill out this page again) Order: • Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 490719 A7 _B7 V. Description of the Invention (5) Figure 9 shows the use of the inductively coupled RF plasma source according to the present invention as shown in Figure 5 Etching Measuring an amount of processing of FIG. Comparison table of main components Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy 1 Vacuum chamber 2 Vacuum pump 3 Gas introduction mechanism 4 Substrate 5 Loading / unloading part 6 Wafer holder 7 RF power source 8 Plasma generation chamber 9 Antenna coil 10 RF power supply 11 Top plate A Vacuum chamber B Plasma generation chamber C One-turn antenna coil D RF power supply E Top cover F Vacuum pump G Gas introduction mechanism Η Base I Loading / unloading section (Please read the precautions on the back before filling in this page)
n I ϋ ϋ 1 ϋ n-^OJa n 1 .n n ·ϋ ·ϋ ϋ I ϋ n I n ϋ ϋ ϋ I II ϋ n ϋ n n ϋ ϋ ϋ n ( I 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 490719 A7 B7 五、發明說明（6 ) J 晶圓保持器 L 電源供應器 較佳實施例之詳細說明 以下參考圖5至7詳細說明本發明之實施例。 圖5爲使用依照本發明之電感耦合射頻電漿源之電漿 處理裝置之圖。參考數字1表示電漿處理裝置之真空室， 和在真空室1中，安排有真空泵2和氣體導入機構3，且 在真空室1內側之壓力設定爲預定値。在真空室1中安裝 有可取出或置入如晶圓和其它工件之基底4之載入/釋載 部份5。此外，晶圓4所安裝至之晶圓保持器6乃提供在 真空室1中。此晶圓保持器6乃連接至RF電源7。 用以構成依照本發明之電感耦合R F電漿源之電漿產 生室8乃整合提供至真空室1之頂部。電漿產生室8之週 邊側壁以如石英之材料製成，以傳輸電磁波。在電漿產生 室8之外側週邊上，安排有包含用以在電漿產生室8內側 產生電漿之金屬管或桿之兩個一轉天線線圈9。天線線圏 9之一端連接至12 · 5MHz之RF電源，以形成RF 電源之導入端，而另一端接地。 此兩天線線圈9安排以在垂直方向疏離，而R F電源 之導入端安排在1 8 0 °之角位移上，亦即，兩天線線圈 9之R F電源之導入端在徑向上安排成互相相對，如圖6 所示。藉由此方式安排天線線圈，可抵銷在電漿和天線線 圈間產生之徑向電場，如圖7所示，而R F電源1 0之頻 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意ί項再填寫本頁)n I ϋ ϋ 1 ϋ n- ^ OJa n 1. Specifications (210 X 297 mm) 490719 A7 B7 V. Description of the invention (6) J Detailed description of the preferred embodiment of the wafer holder L power supply The following describes the embodiment of the present invention in detail with reference to FIGS. 5 to 7. FIG. 5 It is a diagram of a plasma processing apparatus using an inductively coupled RF plasma source according to the present invention. Reference numeral 1 denotes a vacuum chamber of the plasma processing apparatus, and in the vacuum chamber 1, a vacuum pump 2 and a gas introduction mechanism 3 are arranged, and The pressure inside the vacuum chamber 1 is set to a predetermined pressure. The vacuum chamber 1 is provided with a loading / unloading portion 5 which can be taken out or placed into a substrate 4 such as a wafer and other workpieces. In addition, the wafer 4 is mounted The wafer holder 6 is provided in the vacuum chamber 1. The wafer holder 6 is connected to the RF power source 7. The plasma generation chamber 8 for forming an inductively coupled RF plasma source according to the present invention is provided integrally. To the top of the vacuum chamber 1. The peripheral side wall of the plasma generating chamber 8 is made of a material such as quartz to Transmission of electromagnetic waves. On the outer periphery of the plasma generation chamber 8, two one-turn antenna coils 9 including metal tubes or rods for generating plasma inside the plasma generation chamber 8 are arranged. One end of the antenna wire 9 is connected RF power to 12 · 5MHz to form the RF power lead-in end, and the other end is grounded. The two antenna coils 9 are arranged to be separated in the vertical direction, and the RF power lead-in end is arranged at an angular displacement of 180 °. That is, the lead-in ends of the RF power sources of the two antenna coils 9 are arranged to face each other in the radial direction, as shown in Figure 6. By arranging the antenna coils in this way, the radial electric field generated between the plasma and the antenna coils can be offset As shown in Fig. 7, the paper size of the RF power 10 frequency is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the note on the back before filling this page)
ϋ ί 11 ϋ ϋ— I s B —Bi a···· n n k— n_i I 線· 經濟部智慧財產局員工消費合作社印製 490719 A7 B7 五、發明說明（7 ) 率可保持在1 2 · 5MH Z ，且因此，可改善在晶圓處理 時之不均勻性。 (請先閱讀背面之注意事項再填寫本頁) 頂板1 1安排在電漿產生室8之頂端。在頂板1 1上 ，可依照電漿處理之應用而安裝用於濺鍍之靶’且在此例 中，此電路可構造以供應直流電或R F電源。 以下以使用此方式所構成之裝置和圖1之習知裝置執 行晶圓蝕刻處理之實驗比較。 首先，在圖1之習知裝置中，具有熱氧化膜之晶圓設 置在晶圓保持器上，並導入1 0 s c cm之氬氣（Ar ) 。當壓力到達 0 · IPa 時，950W/12 · 5MHz 之R F電源應用至天線線圈，和至晶圓保持器，9 5 0 W /13 · 56MHz之RF電源應用至晶圓保持器。在處 理前後量測熱氧化膜之厚度，且使用此厚度差異當成蝕刻 深度，以執行評量。結果，如圖8所示，可發現在跨過晶 圓表面之蝕刻深度分佈中產生移位。 經濟部智慧財產局員工消費合作社印製 另一方面，以使用依照圖5之本發明之電感耦合RF 電漿源之裝置執行相同實驗。在此例中，一 R F電源使用 於兩天線線圈且輸出分支。輸出爲9 5 0 W，其相同於上 述實驗之輸出，且其它參數亦具有相同値。結果，可改善 移位如圖9所示。 在所示之實施例中，使用兩個一轉天線線圈，但是無 庸贅言的是，亦可提供兩或多個一轉天線線圈，且在此例 中，每一天線線圈乃設置以使它們的R F電源導入端互相 以相等角度之間隔安排。例如，在三個一轉天線線圈之例 :10畴 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 490719 A7 B7 i、發明說明（8 ) 中，連接至RF電源之三個一轉天線線圈之每一個一轉天 線線圈之一端在電漿產生室之週邊側壁之週邊方向中安排 成互相以1 2 0 °之角位移，而在四個一轉天線線圈之例 中’連接至R F電源之四個一轉天線線圈之每一個一轉天 線線圈之一端在電漿產生室之週邊側壁之週邊方向中安排 成互相以9 0 °之角位移。 > 一轉天線線圈可連接至相關的R F電源或至共同至所 有線圈之R F電源。 如上所述，在依照本發明之電感耦合R F電漿源中， 藉由安排多數一轉天線線圈以其一端（第一端）沿電漿產 生室之週邊側壁而連接至R F電源和另一端（第二端）在 電漿產生室之縱軸方向中之間隔上連接至接地電位，和在 週邊方向位移每——轉天線線圈之一端（第一端）以互相 相等之角度，因此，介於天線線圈和電漿間之徑向電場均 勻，且可改善晶圓處理之均勻性。 此外，因爲依照本發明之電感耦合R F電漿源在天線 線圈構造以由R F電源驅動時具有並聯連接之線圈，反應 器變成當使用一轉天線線圈時之一半，因此，可降低在線 圈中之電源耗損，且結果，由於提供至電漿之能量增加， 在電漿室內側之電漿密度增加，且因此，可獲得增加電漿 處理速度，如蝕刻速度，之效果。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） <請先閱讀背面之注意事項再填寫本頁) ----- 訂· —— II--I ·線 ' 經濟部智慧財產局員工消費合作社印製ί ί 11 ϋ ϋ— I s B —Bi a ···· nnk— n_i I line · Printed by the Consumer Consumption Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 490719 A7 B7 V. Description of the invention (7) The rate can be kept at 1 2 · 5MH Z and, therefore, can improve non-uniformity in wafer processing. (Please read the precautions on the back before filling out this page) The top plate 1 1 is arranged at the top of the plasma generating chamber 8. On the top plate 11, a target for sputtering can be installed according to the application of the plasma treatment, and in this example, the circuit can be configured to supply a DC power or an RF power source. The following is an experimental comparison of performing wafer etching processing using the device constructed in this manner and the conventional device of FIG. First, in the conventional device of FIG. 1, a wafer having a thermal oxide film is set on a wafer holder, and 10 s c cm of argon (Ar) is introduced. When the pressure reaches 0 · IPa, an RF power supply of 950W / 12 · 5MHz is applied to the antenna coil, and to the wafer holder, and an RF power supply of 950W / 13 · 56MHz is applied to the wafer holder. Measure the thickness of the thermal oxide film before and after processing, and use this thickness difference as the etching depth to perform the evaluation. As a result, as shown in Fig. 8, it was found that a shift occurred in the etch depth distribution across the wafer surface. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs On the other hand, the same experiment was performed with a device using an inductively coupled RF plasma source according to the present invention according to FIG. 5. In this example, an RF power supply is used for the two antenna coils and the output branches. The output is 950 W, which is the same as the output of the above experiment, and other parameters also have the same chirp. As a result, the displacement can be improved as shown in FIG. In the illustrated embodiment, two one-turn antenna coils are used, but it goes without saying that two or more one-turn antenna coils may be provided, and in this example, each antenna coil is provided so that their The RF power supply terminals are arranged at equal angle intervals from each other. For example, in the case of three one-turn antenna coils: the paper size of the 10-layer paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 490719 A7 B7 i. In the description of the invention (8), it is connected to the RF power supply. One end of each of the three one-turn antenna coils is arranged to be displaced at an angle of 120 ° from each other in the peripheral direction of the peripheral side wall of the plasma generating chamber, and in the example of four one-turn antenna coils 'One end of each of the four one-turn antenna coils connected to the RF power source is arranged to be displaced at an angle of 90 ° from each other in the peripheral direction of the peripheral side wall of the plasma generating chamber. > The one-turn antenna coil can be connected to the relevant RF power source or to the RF power common to all coils. As described above, in the inductively coupled RF plasma source according to the present invention, an RF coil is connected to the RF power source and the other end by arranging a plurality of turns of the antenna coil with one end (first end) along a peripheral side wall of the plasma generation chamber. (Second end) is connected to the ground potential at intervals in the longitudinal axis direction of the plasma generating chamber, and is displaced in the peripheral direction by one end (the first end) of the antenna coil at an equal angle to each other. The radial electric field between the antenna coil and the plasma is uniform, and the uniformity of wafer processing can be improved. In addition, because the inductively coupled RF plasma source according to the present invention has coils connected in parallel when the antenna coil is configured to be driven by an RF power source, the reactor becomes one-half when a one-turn antenna coil is used. The power supply is consumed, and as a result, the density of the plasma inside the plasma chamber increases due to the increase in the energy supplied to the plasma chamber, and therefore, the effect of increasing the plasma processing speed, such as the etching speed, can be obtained. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) < Please read the notes on the back before filling this page) ----- Order · —— II--I · Line 'Economy Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperative