TW486745B - Silicon wafer and method of valuating silicon wafer and method of manufacturing silicon wafer - Google Patents

Abstract

This invention provides a method for producing a silicon wafer having characteristics sufficient for semiconductor devices while doping nitrogen. In the method for producing a silicon ingot by pulling up a silicon single crystal by a Czochralski method, the silicon ingot is produced by pulling up the silicon single crystal under a condition such that the silicon ingot having a part in which the concentration of nitrogen is 5*10<SP>13</SP> to 1*10<SP>15</SP> atom/cm<SP>3</SP> is formed by nitrogen doping and then silicon wafers, each of which contains nitrogen in a concentration of 5*10<SP>13</SP> to 1*10<SP>15</SP> atoms/cm<SP>3</SP> and is used in non-oxidizing heat treatment, are cut out.

Description

V. Description of the invention (1) [Technical field to which the invention belongs] The subject matter relates to a non-aqueous gas treatment such as a dip-hydrogen heat treatment; for example, a lice atmosphere high-temperature heat treatment (referred to as a manufacturing method of silicon wafers). [Known Techniques] for Manufacturing Heat-Treatment Semiconductor Elements In the Chua's method (hereinafter, shaking rabbit circle), there are, for example, Shi Xi wafers (cz — void gap defects in Shi Xi crystal pores) manufactured by the method. In order to remove the airborne noise detected by two FPDs and cop, in order to remove the heat treatment such as bad quality treatment or wind-annealing) on the quality of the final product. In fact, the C Zn ~ Shizhuangbei known to undergo hydrogen treatment is not as good as the void defect that is known to be introduced. Fi :::: It is caused by hollow holes detected by LSTD etc. ^ Excellent withstand voltage characteristics of the oxide film ("Patent ® L", "The effect of hydrogen heat treatment on the second electrode is limited to the most apparent defects of the wafer ^ 4, 'so focusing on the smaller the size of the defect, the use of hydrogen heat treatment: The temperature and the P-transmission speed are accelerated, so that the defect size is fine. The hydrogen heat treatment can make the effect of the hydrogen heat treatment reach deeper (Japanese Patent Laid-Open No. 10-2089 87). This method adapts to the increase in crystal diameter, and proposes to optimize the V / G (V: pull-up speed, temperature gradient of the melting point with f) of the concentration of point defects (voids) that dominate the defect, Proposal to obtain a high-quality wafer (Japanese Patent No. 10-2660666). However, recently, 11 I 1 I 1! 1 111 i 111 1 1 89117204 has been proposed as a reduction in defect size. ptd ------------ Page 4 V. Invention Description 2) By means of small, it is possible to manufacture No. 10-98047 [as long as the invention wants, but the length of the crystal is square cloth. Furthermore, when the temperature annealing effect is sufficient and the high temperature is short, the wafer is passed, and for the nitrogen wafer junction, The present invention does not yet process the manufacturing of silicon wafer wafers after nitrogen processing <circle making. [Solving the problem The present inventors have investigated the invention of the semiconductor element. Adding nitrogen, but whether the annealing strips are suitable for addition is clear whether the results are clear. In view of the rounded square pieces, Sangsho reports as a wafer that adds gas during the growth of CJ Shiyu single crystals to make the size of defects suitable for annealing (Japanese Patent Laid-Open Publication). Problems to be solved] Adding to the crystal When nitrogen is used, due to the segregation phenomenon in the atmosphere gas / temperature change, affected by the uneven defect caused by the daybreaking "really reduce the size of defects, easy to get high" on the other hand increased the density of defects, under no circumstances 'On the contrary, it will cause the deterioration of wafer quality. The above-mentioned nitrogen (doped with nitrogen) has reduced the size of defects, and cannot be fully verified. The use of wafers for the manufacture of components is carried out in accordance with the above issues. The purpose is to verify that the silicon crystal wafers with sufficient characteristics can be used as semiconductor elements in the incorporation method. Means of nitrogen-doped crystals with suitable characteristics] In view of the above-mentioned problems, carefully studied the growth conditions, and ^ can also produce silicon wafer manufacturing conditions with cutting-edge technology ^ characteristics after heat treatment.

V. Description of the invention (3) ------ ^ Specifically, the inventors used the nitrogen doped wafer (nitrogen doped two circles) to measure the withstand voltage characteristics of the gate oxide film and evaluate the wafer characteristics. However, in this process, it was found that nitrogen-doped wafers were compared with wafers that were not doped with nitrogen after erbium treatment in a non-oxidizing atmosphere. TZDB (Time Zer0 ...,

The results of the Dielectric Breakdwn test are tending to be good, but when nitrogen is added at a high degree, the results of the TDDB (Time Dependent Dielectric &quot; ^ Breakdown) test are abnormal. In addition, the present inventors have obtained the following insights: the results of the TZDB test are good, good, and whether the results of the TDDB test are abnormal are related to the nitrogen concentration of the nitrogen-doped wafer. The type of gas (for example, hydrogen or argon) that undergoes chemical heat treatment varies. On the other hand, it can be inferred that the results of the TDDB test found abnormal nitrogen concentrations, and the type of gas for the tender heat treatment is related, but it is roughly constant without These two insights have greatly contributed to the completion of the present invention. In the present invention, after the heat treatment in a non-oxidizing atmosphere, the present inventors have a concentration of 4 X 1 014 atoms / cm3 or less, which is the concentration at which the results of heterogeneous contamination occur. Nitrogen and nitrogen wafers are suitable in the non-oxidizing heat place used for semiconductor device manufacturing = silicon wafers, which are basically included in the scope of patent application. When evaluating the nitrogen-doped wafer by the gate oxide film withstand voltage yield (GOO), the month shows a sufficient hydrogen heat treatment effect on the surface, but its effect has nothing to do with nitrogen doping =. During the evaluation, the yield rate of the oxide film pressure is dependent on the nitrogen concentration, and there is an upper limit and a lower limit on the amount of nitrogen doping. When used as a product for semi-solid components, the nitrogen concentration must be within the specified range. For the completion of the present invention This insight has also contributed greatly.

486745 V. Description of the invention (4) '---

In addition, in the aforementioned Japanese Patent Publication No. 10 to 98 0 47, there is a statement that "the nitrogen concentration is at least 1 XI 0" atoms / cm3 &quot;, but there is no basis for it. A More specifically, the present invention provides the following method and a silicon wafer for non-oxidizing heat treatment for manufacturing a semiconductor device. k (1) A non-oxidative heat treatment stone wafer for semiconductor device manufacturing, whose nitrogen concentration is in the range of 5 X 1 〇13 atoms / cm3 to 1 X 1 〇15 atoms / cm3, preferably 5 X 1013 In the range of atoms / cm3 to 8 X1014 atoms / cm3, more preferably in the range of 5 X 1 〇13 atoms / cm3 to 4 X 1 0 &quot; atoms / cm3, preferably in the range of 1 X 1 〇14 atoms / cm3 ~ 4 X 1 atoms / cm3. That is, when only considering the gate oxide film pressure of TZDB, the nitrogen concentration in the range of good products is in the range of 5 X 1013 atoms / cm3 to 1 X 1015 atoms / cm3 (TZDB gate oxide film withstand voltage good products) Rate is in the range of 90% or more), and its nitrogen concentration is preferably in the range of 1 X 1 0 &quot; atoms / cm3 ~ 8X1 〇 &quot; atoms / cm3 (TZDB gate oxide film withstand voltage yield rate In the range of 95% or more) In addition, when considering the constant current TDDB, it must be 4 X 1014 atoms / cm3 or less. Therefore, as a result, the range of good products is divided into four stages, that is, 5 X1013 atoms / cm3 to 1 X1015 atoms / cm3, 5 χΐ〇53 atoms / cm3 to 8 X 1 014 atoms / cm3, 5 X In the range of 1 × 3 atom / cm3 to 4 X 1014 atoms / cm3, and in the range of 1 × 4 atom / cm3 to 4 X 1014 atoms / cm3, they can be appropriately selected according to the product to be manufactured. In addition, as the types of silicon wafers for heat treatment, there are silicon wafers for hydrogen heat treatment which are used for heat treatment in a hydrogen atmosphere, and heat treatment under argon atmosphere.

89117204.ptd Page 7 V. Description of the invention (5) ί Use silicon wafers, or 石 气 Ϊ mixed gas heat treatment Shi Xi wafers, etc. in order to reduce the layers The non-oxidizing heat treatment (fire treatment in the absence of oxygen) of crystal defects is all included in the scope of the present invention. (j) In the method of manufacturing silicon ingots by pulling up single crystal silicon using the Chua's method, single crystals are pulled up under the condition that the concentration of nitrogen is 5X1 〇13 atoms / CIfl3 ~ 4X1 014 atoms / cm3. Xi manufacturing method of Shi Xi crystal rod. In particular, in the method of manufacturing silicon ingots by pulling up single-crystal silicon, after doping nitrogen, the pieces of milk concentration ΐ1 X 1 〇14 atoms / Cm3 ~ 4 X 1 014 atoms W range, The method of producing a silicon wafer for non-oxidizing heat treatment by drawing soap crystal silicon is a good method. ^ This is an experimental example of the present invention. The above-mentioned physical silicon wafer for semiconductor device manufacturing is manufactured by the Chua method (CZ method). At this time, after using Chua's Nitrogen, the nitrogen concentration of a part or the whole was made to be 5 乂 "~~ 10 atoms / cm3, and after doping, single crystal silicon was pulled up to produce a silicon ingot. From this silicon ingot, A portion having a nitrogen concentration of 5 ^ (^ ~ 丄 x1015 atoms / cm3, preferably in a range of 1 × 10 "to 8xl0" atoms / cm3 is cut out, and silicon for non-oxidizing heat treatment for manufacturing semiconductor parts is prepared. Wafers, especially silicon wafers for hydrogen thermal treatment or silicon wafers for argon annealing. In addition, the CZ method can also be used to add magnetic fields to the melt solution (M c Z method). — ^ The method of introducing nitrogen can be a method of mixing nitrogen into the argon gas 2 introduced into the furnace during crystal growth, a method of dissolving silicon nitride in a raw material melt, and introducing a nitrogen atom into a pull-up single crystal. All the methods now known and all methods that will be discovered in the future.

89117204.ptd Page 8 486745 V. Description of the Invention (6) As an embodiment of the present invention, the following methods can be cited. For the non-oxygen-containing Shi Xi wafers for the manufacturing of semiconductor elements according to the present invention (the aforementioned Shi Xi wafers for non-oxidizing heat treatment), the heat treatment or the 1-gas annealing of the semiconductor device . J Shi Xijing: Considering the hypothesis of the components, silicon wafers used to adjust the amount of nitrogen doped semiconductor elements. 1. A method for evaluating a wafer doped with nitrogen, which is characterized by measuring the assumed element lifetime on a physical wafer and determining whether the nitrogen doped can be used as a wafer for semiconductor device manufacturing. . -:? The above-mentioned round method 'is characterized by the TDDB test method, which is a method for measuring the hypothesis of the above wafers. w 7th edition and y hypothetical element "refers to the element structure of tddb: ratio, the so-called" hypothetical: two:

The life of the component structure. [Experimental Example]: As an experimental example, the present inventors etc. performed mirror polishing from various kinds of: "Xi cut out Shixi wafer" &lt; growth of single crystal> degree defect effect The investigation was carried out. Crystallization was based on the orientation of the dopant, &lt; 10 0 &gt;, left and right P: rotten straight twist 200_, P type, 1 10.13 ~ 〇.4_2 / 1 ^ 11. (: ', 〇 £ 3 factors, ^ and ¥ &gt; ^ 2 are respectively (v: pull-up speed, Gl. 囡,: growth in the range of 0 c / min 丄. Temperature slope near the solid-liquid interface G2 :;

486745

&lt; Incorporation of nitrogen &gt; X 1013 Nitrogen was added to achieve a nitrogen concentration of 4 9. A crystal was used without adding nitrogen. #For comparison, also, the addition is by introducing nitrogen into the CZ furnace and the table &lt; quantitative nitrogen concentration &gt;-the quantitative nitrogen concentration is quantified by using SIMS to measure a part of the available SIMS measurements For the part that cannot be measured by s I MS, it can be quantified by ^ s I MS measured by using a predetermined calculation formula. More specifically, SIMS (made by Cameca, IMF-6F type) has a specific nitrogen content. Quantitative detection lower limit value (~ 1 XI 〇14atoms / cm3) of the most large / concentrated crystal (the solidification rate is about 90%) is quantified. 彳 At this time, the stone grown by the FZ method without nitrogen doping. The crystallization is for comparison. It is true that there is no interference with the detection value due to the residual nitrogen in the atmosphere when k enters the sample replacement. The known standard sample is used to correct the concentration of ^ gas formed by implanting ions into nitrogen. Calculation formula to calculate nitrogen concentration at locations that cannot be measured by s I MS

Cs = kCo (l -L) h C s · Impurities in crystals> Chen degree, C 0 · Impurities in the initial k liquid, agronomy, L: curing rate, K: often used in the technical field Nitrogen segregation

89117204.ptd Page 10 486745 V. Description of the invention (8) The number, Yatsurugi, et. Al., 0.0007 from the literature of (1973) J. Electrochem. Soc 120.975. The above calculation formula uses the intrinsic segregation coefficient K of the impurities to indicate the concentration of nitrogen impurities in the molten silicon entering the crystal. The above formula shows the formula of the segregation phenomenon. Due to the segregation phenomenon, the concentration of impurities (nitrogen concentration) increased at the same time as the growth of the priests and mouths, reaching a high concentration at the end of the crystal, exceeding the lower limit of quantitative detection of nitrogen by SI MS (~ 1 X 1 〇14 atom / cm3) ° Therefore, in this example, the nitrogen concentration was measured by SIMS at the tailmost part of the crystal (the curing rate was about 90%), and the concentration of each crystal position was calculated from the above formula &lt; The heat treatment of the wafer &gt; Yes, such a nitrogen-dosed wafer is subjected to hydrogen heat treatment (hydrogen annealing) annealing. Hydrogen annealing conditions and argon annealing are performed after two hours of ordinary fire Λ treatment. And argon gas removal table: 3 and above = Ϊ Ϊ Remove the surface layer 3 # m state and argon annealing (G0I). Under the condition of layer 3 V &quot; 1, study the pressure resistance characteristics of the gate oxide film &lt; air Evaluation of heat-treated (hydrogen-annealed) wafers> Withstand voltage of the inter-electrode oxide film (G0I)] The withstand voltage of the idler oxide film is formed on the wafer. When ^ ^ ^ L1 ν, Λ Λ 1, α After the original d # m gate oxide film withstand voltage is about 3 / zm after round surface grinding, # Packets applied voltage was measured. X Pink M0S structure formed thereon,

486745 V. Description of the invention (9) [TZDB (Time Zero Dielectric Breakdwn) test] First, when the gate oxide film withstand voltage is measured with TZDB, the measurement method used in this experimental example uses i 〇 as the delete pole. A polysilicon electrode of mm2 is applied with a step voltage method. The oxide film thickness is 25 nm. Furthermore, the measurement temperature was room temperature (25 ° C), and it was determined that the withstand current was 丨 〇 # a. As a result, as shown in Fig. 1, the yield rate of the oxide film immediately after the hydrogen treatment was almost 100% depending on the nitrogen concentration and growth conditions. "However, when the hydrogen layer was removed to remove the surface layer 3 // 11], and the pressure resistance of the oxide film was checked, as shown in Fig. 2, the nitrogen concentration increased to 6 x j ou atoms / cm3, and the yield rate increased, but If it is more than this, the yield rate will decrease. Therefore, if the integration of the wafer surface layer (element active layer) with increasing importance is considered with the high integration of the device, the oxide film withstand voltage from the surface layer 3 "η depth is good. The rate must be maintained at least 90%. Figure 2 shows that 'in order to maintain the good yield rate of the oxide film above 90%, the nitrogen concentration must be in the range of 5 × 1 (F ~ 丨 x1015 atoms / cm3. The good yield rate of Xiaoliang's oxide film is more than g $%, and the nitrogen concentration must be set within the range of 1 X 1OΗ to 8 x 1014 atoms / cm3. [Constant current TDDB (Time Dependent Dielectric Breakdown) test ] = Current TDDB is the change in the voltage applied to the device. It can be seen that the oxide film is destroyed after a certain period of time to keep the current constant. During the measurement, the MOS structure is formed in the same way as the test of the withstand voltage of the oxide film. At the time of measurement, for the measurement method used in the experimental example, a polysilicon electrode of 1 mm2 was used as the electrode. The thickness of the oxide film was 25 nm. Furthermore, the measurement temperature was

486745, description of the invention (10) 125 ° C 'The applied current density is 50 mA / cm2, and the electric field is determined to be 4 MV / cm. At the current T D D B, the normal element exceeds 1000 seconds and instantaneous damage occurs. However, in the case of an abnormal element, instantaneous damage does not occur, but aging occurs over time. Therefore, it is slowly destroyed from 1000 seconds ago. For this reason, by determining the set value of the electric field, as a result, it was seen that damage also occurred after 1000 seconds. For this reason, if the measurement result of constant current TDDB is plotted, for normal components, the plotted points are dense at a certain time (at this time, approximately 丨 00 seconds), and there are no plotted points outside (refer to the figure) 3 (A)), when a component is abnormal, a plot point is also drawn at a place that has left for 100 seconds (see FIG. 3 (b)). Such anomalies occur in heat-treated wafers, which are not seen during heat-treatment of wafers that are not doped with nitrogen (see Figure 3 (A)). They are unique to heat-treated wafers that are highly doped with nitrogen. phenomenon. In addition, the TDDB test is a type of reliability test of a semiconductor device, and is a general indicator of fatigue resistance of a component. In addition, the TDDB test may be hypothetical data for estimating the stability of the lifetime of a semiconductor device manufactured from a wafer as a test object. In this test example, a constant current T D D B in an unpolished state and a constant current τ D D B after being polished for 3 a m were measured for each wafer after the hydrogen heat treatment. As a result, the information shown in the following table was paid.

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Page 14 486745 V. Description of the invention (12) Table 2 Estimated project TDDB abnormal rate% Nitrogen concentration (atoms / cm3) 0 0 0 0 0 0 0 0 5.00E + 13 0 5. 10E + 13 0 6.30E + 13 0 1. 13E + 14 0 1.41E + 14 0 1. 51E + 14 0 1. 64E + 14 0 4. 97E + 14 18. 9 6.48E + 14 8.11 8. 61E + 14 13. 5 1. 12E + 15 10. 8 1.26E + 15 8. 11 Here, Table 1 shows the relationship between the nitrogen concentration in the unpolished state and the constant current TDDB abnormal rate, and Table 2 shows the nitrogen concentration after grinding 3 // m and the constant current TDDB abnormal rate. relationship. As shown in these tables, the constant current TDDB shows a normal value when the nitrogen concentration is 4 X 1014 atoms / cm3 or less. So through the above

89117204.ptd Page 15 486745 V. Description of the invention (13) The oxide film withstand voltage conditions plus this necessary condition, the most suitable condition for nitrogen-doped crystals is a nitrogen concentration of 5 X 1 013 atoms / cm3 ~ 4 X 1 〇i4 The Shi Xi wafer for heat treatment in the range of atoms / cm3 'is particularly a Shi Xi wafer for heat treatment having a nitrogen concentration in the range of 1 X 10 μatoms / c W to 4 X 1014 atoms / cm3. &lt; Evaluation of argon-annealed wafer &gt; [TZDB (Time Zero Dielectric Breakdown) Test] The gate oxide film withstand voltage (GOi) was measured by the TZDB test under the same conditions as in the case of hydrogen annealing. The breakdown voltage of the gate oxide film after polishing 6 was also measured only during argon annealing. The results are shown in Fig. 4. In FIG. 4, FIG. 4 (A) shows the unpolished case, the case after grinding 3 ”η, and the case after grinding 6 // m, respectively. However, FIG. 4 (B) is for the purpose of annealing with hydrogen, and polishing. Figure 2 after 3 // m is easy to distinguish the difference, especially only the data of the occasion after grinding 3 // m. As shown in Figure 4, nitrogen-doped wafers are better than non-nitrogen-doped wafers, TZ]) The gate oxide film in the BT test has excellent withstand voltage characteristics. In addition, no clear upper limit is obtained for wafers polished after 3 // m after hydrogen annealing. Therefore, for doped wafers, argon annealed There is no upper limit of the nitrogen concentration on the test, and there is an upper limit than the nitrogen concentration 1 × 1515 atom “M” which is the upper limit during hydrogen annealing. Furthermore, as shown in Fig. 4 (A), the results of the TZDB test were not much different between those annealed with argon and those after grinding 3 and 6 // m after grinding. [Constant current TDDB (Time Dependent Dielectric Breakdwn) test] The constant current TDDB test is also annealed with hydrogen as in the TZDB test.

486745 V. Invention description (14) is carried out under the same conditions. The results are shown in Figs. 5 to 7. Figures 5 and 6 show that from the state where nitrogen is not added at all (Figure 5 (A)), the nitrogen concentration is increased to 5 X 1013 atoms / cm3 (Figure 5 (B)), 1 X 1014 atoms / cm3 (Figure 5 (C)), 1.13 X 1014 atoms / cm3 (Figure 5 (D)), 1.64 X 10 "atoms / cm3 (Figure 6 (A)), 5.82 X 1014 atoms / cm3 (Figure 6 ( B)), constant current TDDB test results at 1.37 X 1015 atoms / cm3 (Figure 6 (C)). From these figures, it is shown that the nitrogen concentration is 1.64 X 1014 atoms / cm3 (Figure 6 (A) ), There is no change in the dense state of the plotted points, but the nitrogen concentration is 5.82 X 1014 atoms / cm3 (Fig. 6 (B)) and 1.37 X 1015 atoms / cm3 (Fig. 6 (C)). There is a unique plot point offset on the element, but it can be seen later in 丨 00 seconds. In addition, (Fig. 6 (D)) will be 5.82 X 1014 atoms / cm3 and 1. 37 A wafer doped with nitrogen at a concentration of X 1 015 atoms / cm3 represents a wafer that repeatedly shows hydrogen annealing and argon annealing. In addition, FIG. 7 shows that FIG. 5 (A) to FIG. 6 (C) are repeatedly shown. From this result, It is thought that for nitrogen-doped wafers subjected to argon annealing, based on the results of the constant current TDDB test, the nitrogen concentration 丨 · 64 χ 1 atoms / cm3 (Figure 6 (A)) ~ 5.82 X ΙΟ &quot; atoms / cm3 (Fig. 6 (there is an upper limit between 'bd', it is 4x10h atoms which is the upper limit on the results of the constant current TDDB test with a wafer annealed for hydrogen gas) The value of / cm3 (Fig. 6 (D)) exists nearby. This shows that 'for hydrogen annealing and argon annealing of nitrogen-doped wafers, a large difference can be seen in the results of the TZDB test, but In the results of the fixed power TDDB test, almost no big difference was seen.

\\ 326 \ 2d- \ 89-ll \ 89117204.ptd Page 17 As a dream wafer for semiconductor devices (semiconductor ^), the results of the TDDB test must be taken into consideration, so the surface date = ^ evening crystal fire and hydrogen annealing Non-oxidative heat treatment of objects

One must test you with a constant current TDDB: alpha, any, nitrogen / concentration below. Figure 4 shows the change in the nitrogen concentration in the pull-up single crystal when the upper limit is 4 X Β_: "Γ ;; In Fig. 8, the 'sampling table' is not a polysilicon fork made of a piece of material which is put into a volume of 1 mussel as a mussel. Fork: is the solidification rate of the tritium, and the vertical axis represents the nitrogen concentration. In the figure, "" indicates the curve at the initial concentration of 2XW, (b) indicates the curve at the initial concentration =), and (c) indicates the curve at the initial concentration of 5 x 1013. From this figure, it is shown that the segregation with nitrogen As the above description shows, the nitrogen concentration of the tail side of the makeup (the upper part of the figure shows the high value of the silicon rod on the other side of the silicon rod &amp; pole rod). As described above, the present invention can provide Even wafer towels show excellent wafer characteristics.

486745

Figure 1 ”shows the relationship between the nitrogen concentration and the oxide film pressure after hydrogen annealing. 卩 1000, 2 shows the nitrogen film concentration and the yield rate of the oxide film when the surface layer is polished and removed after hydrogen annealing 3 // m. Relationship graph. —Figure 3 shows the measurement results of the constant current TDDB test of the silicon wafer without hydrogen heat treatment. Among them, FIG. 3 (A) shows the measurement result of the constant current T ^ DB test of a normal element not doped with nitrogen. Fig. 3 (B) shows a measurement result of a constant current TDDB test of a high-concentration nitrogen-doped element exhibiting abnormality. Fig. 4 shows a gate oxide film withstand voltage (GOI) of the TZDB test of an argon-annealed nitrogen-doped wafer. Figure 4 shows the results of the measurement. In Figure 4, Figure 4 (A) is a graph showing the unpolished, polished, and polished 6 // m, respectively. Figure 4 (B) shows the polished 3 # after hydrogen annealing. Figure 2 after m is easy to distinguish the differences, especially the data only after grinding 3 // m. Figure 5 shows the results of constant current TDDB test of argon-annealed nitrogen-doped wafers. In particular, Figure 5 ( (A) ~ Figure 5 (D) shows a state where nitrogen is not doped at all (Figure 5 (A)) 'Increase the nitrogen concentration to 5 x 1013 atoms / cm3 (Figure 5 (B)), ΐχ 1014 atoms / cm3 (Fig. 5C)), 1 · 13 X 1014 atoms / cm3 (Fig. 5 (D)), the results of constant current TDDB test. Fig. 6 shows nitrogen doped with argon annealing. A graph of the results of the constant current TDDB test of the wafer. In particular, Figures 6 (A) to 6 (C) show that the nitrogen concentration was increased to 1.64 X 1014 atoms / cm3 (Figure 6 (A)), 5.82 X 1014 atoms / cm3 (Fig. 6 (B)), 1.37 X 1015 atoms / cm3 (Fig. 6 (C)) constant current TDDB test results. 16XD) shows that 5.82 X 1014 atoms / Nitrogen-doped wafers with a concentration of cm3 and 1 · ~ 37 X 105 atomic atoms / cm3, repeating hydrogen annealing and argon degassing, respectively.

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Claims (1)

4ρ? Ϊ́Μ 6. Please ask for nrii 89117204 Tomotsuki correction «1. 1, 2 5 Revision 1 · A silicon wafer, which is doped with nitrogen and treated with non-oxidizing heat. Its characteristics are ... !! The nitrogen concentration is in the range of 5 X 1013 atoms / Cm3 ~; [χ 1015 atoms / cn] 3. Its special wafer, which is doped with nitrogen and non-oxidative heat treatment, has a nitrogen concentration of 5 x 1013 atoms / cm3 to 4 x 1014 atoms / cm3. The scope of patent application is 1 or 2 Silicon wafer, in which the above-mentioned non-oxidizing, and the treatment system is hydrogen heat treatment or argon annealing treatment. 4. A silicon wafer characterized by: y = produced when the TDDB test method or the test method is implemented Several orders are ordered to adjust the amount of nitrogen doped. Edition. Another ^ An evaluation method of Shi Xi wafers, characterized by: Measured by measuring the nitrogen-doped heat-treated silicon crystal τ_ test method Hypothetical = = Verification method or Shi Xi: whether or not j can be used for the manufacture of semiconductor components: using Hainan, "" please use the appraisal party of Shi Xi wafers in the scope of patent No. 5. = i ί = The method of δ δ and the elder brother's life made when implementing the TDDB test method or the tzdb test method is the TDBdh test method. Ding Yi Zuo Zhi Zhi 7 system: Π;: ;;:!: The bovine i system includes: applying non-oxidizing heat to the crystal using the Chua's method; ": single-crystal spar with heterothermal treatment of nitrogen. Those who donate the above-mentioned non-oxidizing weekday silicon wafers are characterized by: Sugawara is within a range of ~ 1 × 1015 atoms / cm3.