TW483801B - Chemical mechanical polishing device - Google Patents

Abstract

This invention provides a chemical mechanical polishing (CMP) device applicable to damascene manufacture process, which consists of a polishing stage, a slurry supply device, a polishing carrier and a conditioner, in which there is a cooling device on the polishing carrier. The cooling device is used to lower the temperature of the slurry surrounding the edge of the wafer to the range between 5 to 10 DEG C when a wafer is taken by the polishing carrier to the polishing stage for polishing process. This can increase viscosity of local slurry and thus prevent scratch of the dielectric layer on the wafer or delamination from the wafer edge.

Description

483801

Field of the Invention: The present invention relates to a grinding wheel and a grinding device for preventing wafer edges: eight thunder: a chemical mechanical separation and scratches. Related technical description of the dielectric layer on the edge during the polishing process: In the current integrated circuit manufacturing process, it is often necessary to form an insulating layer on the semiconductor wafer, such as silicon dioxide, and then form a metal layer on the insulating layer. , Such as copper, aluminum and tungsten. In order to meet the requirements of the manufacturing process, the insulating layer and the metal layer must be planarized to facilitate subsequent processes. The technique commonly used today is the chemical mechanical polishing (CMP) method. However, in the damascene process, the dielectric layer is usually made of low dielectric materials, such as HBD (hard black diamond), hydrogen silsesquioxane (HSQ), and fluorinated silicon. (Methyl silses (luioxane, MSQ), etc., these materials usually have low mechanical strength ', so when chemical mechanical polishing is performed, the insulation layer (that is, the dielectric layer) will peel and scratch, which will cause particles (Particle) pollution, failure to deposit metal layers smoothly in subsequent processes, and failure of components, etc. In order to further understand the background of the present invention, the following is a description of the conventional chemical mechanical polishing (CMP) apparatus shown in FIG. Technology. In the first figure, the conventional chemical mechanical polishing device includes a polishing table 10, a slurry supply device 14, a polishing carrier 16, and a finisher 20. The polishing table 10 here is of a roll type, and is provided thereon. Conveyor belt polishing pad

483801

12. Furthermore, a retaining ring 18 is provided at the bottom of the polishing carrier 16 to prevent vertical slippage when the wafer 18 is carried. In addition, the slurry supply device 1 supplies the slurry 13 to the polishing pad / 2 for polishing. When the wafer has completed the planarization process, the surface of the polishing pad 12 is cleaned by a finisher 20 with diamonds (not shown) on the surface. However, during the planarization process, especially when the planarization process is performed, the dielectric layer (not shown) on the wafer 18 is made of low mechanical strength and low electrical materials, so Shear stress during chemical mechanical polishing: the problem of dielectric layer peeling or severe scratching 'especially at the edge of wafer 18' affects subsequent processes. In order to solve this problem, a conventional method is to set a temperature control device (not shown) in the polishing platform 10 to reduce the temperature of the slurry 13 and reduce the shear stress acting on the wafer. J Second electrical layer peeling and scratch problems. However, the material used in the polishing pad 12 is not easy to dissipate heat, resulting in poor results. In addition, a comprehensive reduction in the temperature of the slurry 13 may also cause a problem of a reduction in the polishing rate. In addition, some people have used different mortar formulations to improve the above problems. However, there is a problem that the cost increases significantly. In view of this, the present invention proposes a chemical-mechanical grinding device suitable for the inlaying process. By setting a cooling device on the grinding carrier, the temperature of the local slurry is reduced to increase the viscosity of local slurry Alleviates the effect of shear stress during grinding, which effectively solves the problems of peeling and scratching of the dielectric layer at the edge of the wafer. Summary of the invention:

〇503.6500TW; TSMC2001.〇334; spin.ptd

A chemical-mechanical polishing device is used to reduce the shear stress on the surface to effectively solve the problems of dielectric clearance and damage on the wafer edge. According to the above object, the present invention provides a chemical-mechanical polishing assembly, including a grinding platform, which has a grinding and grinding slurry supply device for supplying grinding slurry to a polishing pad, and a grinding The carrier is provided with a laminating ring for carrying a wafer and moving it on a polishing pad for polishing; and a cooling device provided inside the laminating% for locally cooling the slurry temperature to 5 to 丨 0t. range. The cooling device further includes an annular tube; and the refrigerant is filled in the annular tube to reduce the temperature of the slurry near the edge of the wafer. Among them, the refrigerant is selected from at least one of dichlorodifluoromethane, liquid nitrogen, and liquid helium. In addition, the above-mentioned chemical mechanical polishing device further includes a finisher for cleaning and grinding the surface of the concrete. According to the above object, the present invention provides a method for preventing the dielectric layer from peeling and scratching during the grinding process. The method is suitable for a chemical mechanical polishing device having a polishing platform, a grinding supply device, and a polishing carrier. The method includes the following steps: A cooling device is arranged on the grinding carrier; when the grinding carrier carries a wafer with a dielectric layer formed thereon and is moved on the grinding platform for grinding /, the temperature of the slurry near the wafer edge is reduced by the cooling device , 'The viscosity of two local research clusters. 9 plus a simple description of the schema:

〇５〇3-650〇TW; TSMC2000-〇334; spin.ptd

483801 V. Description of the invention (4) In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, Dong's best examples are given below, and in conjunction with the accompanying drawings, a detailed description is provided as shown in Figure 1. FIG. 2 is a schematic cross-sectional view of a chemical mechanical polishing device according to an embodiment of the present invention; FIG. 3 is a schematic view illustrating a polishing vehicle according to an embodiment of the present invention; Bottom view; Figure 4 shows a schematic diagram of wafer polishing during the damascene process. [Symbol description] 10, 100 ~ grinding platform; 1, 2, 10 ~ 2, grinding pads; 1, 3, 10 ~ 3, grind pulp; 14, 104 ~, grind pulp supply device; 1, 6, 106 ~ grind carrier ; I 8, 108 ~ laminating ring; 20, 11 2 ~ finisher; 24, 114 ~ wafer; II 0 ~ cooling device; 110a ~ ring tube. Detailed description of the preferred embodiment: The chemical mechanical polishing of the embodiment of the present invention will be described below with reference to Figures 2 to 4.

IME 0503-6500TWF; TSMa001-0334; spin.ptd ----- Page 7 V. Description of the invention (5) Device: Soil protection: The method of peeling and scratching the electric layer during the grinding process. Grinding =: = According to the second circle, it depicts the chemical machine Λ1 according to the present invention;: ° ----- T y, _ ^ 理 益 11 2. In this embodiment, a belt-shaped grinding wheel 塾 102 is placed on the grinding wheel II and travels in a straight line. 并且 Also, a bottom of the grinding carrier 10 is provided with a pressing cover and a two-call box. Widely called "㈣" to prevent wafers from being loaded :: 承载 The cover ring 108 is made of plastic materials, such as iron fluoride, and the ground water supply device 104 provides the ground slurry 103 to the polishing pad 102. After the wafer 114 has completed the planarization process, the surface of the polishing pad 12 is cleaned by a finisher U2 covered with diamond (not shown). The difference from the traditional chemical mechanical polishing device is that A cooling device 108 is provided in the two parts of the crimping ring 108, and the function is to grind locally the temperature of the slurry 1-3 to a predetermined temperature. In this embodiment, it is cooled to the range of 5 to 10 C. It The operation will be described later. Next, referring to FIG. 3, which shows the lower view of the grinding carrier 106 according to the second figure, a cooling device η 〇 is installed inside the crimping ring 108, and its Including a circular tube 1 l0a and a refrigerant (not shown =) filled inside the circular tube 1 10a, such as two Gas difluoromethane, liquid nitrogen, liquid helium, etc. Next, referring to FIG. 4, it shows a schematic diagram of wafer grinding in the mounting process. During the chemical mechanical polishing (CMp) process, the slurry is oversized. The fluid shear stress of 103 usually damages the 'I electrical layer (not shown) on the circle 11 4 and peels and scratches, because the electrical layer is made of a material with a low dielectric constant, such as Dielectric constant is not higher than 2

483801 V. Description of the invention (6) 8 HBD, HSQ, and MSQ have low mechanical strength, and the problem is described in the present invention. By increasing the thickness of the researcher h (here: above! 2 and the thickness of the slurry between the polishing pad 102) ) To reduce the buckling caused by shear stress. However, the thickness h of the fish is x, ^ ^ ^ ^ ^ μ, and h /, the slurry viscosity is directly proportional and the slurry viscosity is inversely proportional to the slurry / dish. Therefore, reducing the slurry 10 reduces the damage to the wafer 114 by the shear stress. That is, pull ::: add "h and m", that is, to relax the mechanical polishing effect of the polishing pad 102 on the wafer 114 by the thicker slurry 103 and the thickness h1. However, If the temperature of the slurry 101 is comprehensively reduced, and the chemical reaction rate of 03 is reduced, the chemical grinding effect is greatly reduced.-Because of the 7 U in this embodiment, 'in order to prevent the dielectric layer from peeling and scratching during the grinding process. In order to reduce the problem of reducing the alpha chemical grinding effect, a method is proposed. When the grinding carrier of the above-mentioned chemical mechanical grinding device is set and is close to the line grinding, the neighboring device is reduced by the cooling device u0.温度 3 temperature to increase the viscosity, thereby increasing the thickness of the local slurry 1003. M research water 103 Therefore, according to the method of the present invention, dielectric sound scratches or peeling at the edges of wafers 114 can be effectively prevented, and at the same time, Improve the problem of reduced chemical grinding effect caused by comprehensive reduction of Ⅱ. -7. Although the present invention has been limited to the present invention by a preferred embodiment, any familiarity with this technique is not intended to be used as a visual supplement. # 奎 ^ Move a retouch, so the protection scope of the present invention Lee defined range, whichever Η ° 5〇3-65〇〇TWF;. TSMC2001-0334;. Spin surface ptd Page 9

Claims (1)

4 ^ 3801 ι · A kind of chemical mechanical polishing device, suitable for surface-embedding process, including a polishing platform with a polishing pad disposed on it; a slurry supply device for supplying slurry to the polishing pad; a polishing carrier, setting A lamination ring is used to carry a wafer and moved on the polishing pad for polishing; and a cooling device is arranged inside the lamination ring to locally cool the mounting temperature to a predetermined temperature. 2. The chemical mechanical polishing device according to item 1 of the patent application scope, wherein the cooling device further comprises: an annular tube; and a refrigerant 'filled in the annular tube, thereby reducing the slurry near the edge of the wafer temperature. 3. The chemical mechanical polishing device according to item 1 of the scope of patent application, further comprising a finisher for cleaning the surface of the polishing pad. 4 · The chemical mechanical polishing device described in item 1 of the scope of patent application, wherein the "electric layer" is a low-dielectric material and the dielectric constant of the material is not lower than 2. 8. 5. As described in item 1 of the scope of patent application The chemical mechanical polishing device, wherein the pressing ring is made of Teflon. 6 · The chemical mechanical polishing device according to item 1 of the patent application scope, wherein the predetermined temperature is 5 to 10 ° C. 7. The chemical mechanical polishing device according to item 2 of the scope of the patent application, wherein the refrigerant is selected from at least one of two gas difluoromethane, liquid nitrogen and liquid helium. 0503-6500TW; TSMC2001-0334; spin.ptcl Page 10 ^ OJOUl 6. The scope of patent application is applicable to 8 layers ;: method of peeling and injury during grinding, mechanical grinding device, baggage; row supply device and grinding Chemical machine of the cutting tool ^ A cold set on the grinding carrier ^ When the grinding carrier carries a grinding tool with eight positions on the grinding platform for grinding,-electricity = die / wafer and move on it The slurry temperature at the edge of the wafer is reduced by the cooling temperature, which is adjacent to increasing the viscosity of the partial polishing. hi 0503-6500TWF; TSMC2001-0334; spin.ptd page 11