TW483141B - Method of forming multilayer titanium nitride film by multiple step chemical vapor deposition process and method of manufacturing semiconductor device using the same - Google Patents
Method of forming multilayer titanium nitride film by multiple step chemical vapor deposition process and method of manufacturing semiconductor device using the same Download PDFInfo
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- TW483141B TW483141B TW87121616A01A TW483141B TW 483141 B TW483141 B TW 483141B TW 87121616A01 A TW87121616A01 A TW 87121616A01A TW 483141 B TW483141 B TW 483141B
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A8B8C8D8 483141 六、申請專利範圍 上，該方法係使用TiCljiNH3氣體流量比例較第一氣體流 量比例爲大的第二氣體流量比例所供給的來源氣體；以及 (c)將該第一 TiN膜及第二TiN膜於NH3氣氛中退火， 其中第二TiN膜之厚度係大於第一TiN膜之厚度，且該 第一氣體流量比例與第二氣體流量比例，係各選擇介於 0.02 至 0.1 間。 13·如申請專利範圍第12項之方法，其中該底層爲Ti 膜。 H·如申請專利範圍第12項之方法，其中該第一氣體流 量比例係選擇介於0.02至0.05間。 15. 如申請專利範圍第12項之方法，其中形成該第一 TMN膜的步驟與形成該第二TiN膜的步驟，係個別於0.2至 0.5 Ton*的壓力、530至68(TC的溫度下進行。 , 16. 如申請專利範圍第12項之方法，其中該退火步驟係 於530至680°C間的溫度下進行。 17·如申請專利範圍第12項之方法，其中該第一TiN膜 具有10至100A間的厚度。 18·—種製造半導體基板的方法，其包含的步驟有： (a) 形成一具有接觸孔的絕緣膜於半導體基板上； (b) 形成一 Ti膜於該接觸孔的內壁上； (c) 藉由使用由TiCl4氣體與NH3氣體的混合物所組成之 來源氣體的CVD法形成TiN膜於Ti膜上並將該TiN膜於NH3 氣氛中退火的製程，重複此製程至少二次，而形成多層TiN 膜，其中形成多層TiN膜的步驟包含的步驟有： 3 適用中國國家標準（CNS)A4規格(210 X 297公釐) .........................V-..............訂................槔 (請先閱讀背面之注意事項再填寫本頁) 483141 截 C8 D8 六、申請專利範圍 使用具有預定TiCUiNH3氣體流量比例的第一氣體流 量比例所供給的來源氣體，而形成一保護Ti的TiN膜；以及 使用具有TiCl4對NH3氣體流量比例大於第一氣體流量 比例的第二氣體流量比例所供給的來源氣體，而形成一主 TiN膜；以及 (d)形成一金屬插塞於該多層TiN膜上， 其中，第一氣體流量比例與第二氣體流量比例係各選 擇介於0.02至0.1間。 .19·如申請專利範圍第18項之方法，其中形成保護Ti膜 的步驟包含的步驟有： 使用介於〇·〇2至0.05間之第一氣體流量比例的來源氣 體，形成具有10至100Α厚度的一第一TiN膜於Ti膜上；以及 將該第一TiN膜於ΝΉ3氣氛中退火，並且 形成主TiN膜的步驟包含的步驟有： 使用介於0.02至0.1間之第二氣體流量比例的來源氣 體，形成一第二TiN膜於保護Ti膜的TiN膜上；以及 將該第二TiN膜於NH3氣氛中退火。 20.如申請專利範圍第18項之方法，其中形成多層TiN 膜的步驟更包含有形成避免氧擴散的TiN膜於該主TiN膜上 的步驟。 21·如申請專利範圍第20項之方法，其中形成避免氧擴 散的TiN膜的步驟包含的步驟有： 使用來源氣體形成具有10至100A厚度的一第三TiN膜 於主TiN膜上；以及 4 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) V· 線 483141 A8 B8 C8 D8 六、申請專利範圍 將該第三TiN膜於NH3氣氛中退火 5 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公釐)A8B8C8D8 483141 6. In the scope of patent application, this method uses a source gas supplied by a TiCljiNH3 gas flow ratio that is larger than the first gas flow ratio and a second gas flow ratio; and (c) the first TiN film and the second The TiN film is annealed in an NH3 atmosphere, wherein the thickness of the second TiN film is greater than the thickness of the first TiN film, and the first gas flow ratio and the second gas flow ratio are each selected between 0.02 and 0.1. 13. The method of claim 12 in which the bottom layer is a Ti film. H. The method of claim 12 in which the first gas flow rate is selected between 0.02 and 0.05. 15. The method of claim 12 in which the step of forming the first TMN film and the step of forming the second TiN film are individually at a pressure of 0.2 to 0.5 Ton * and a temperature of 530 to 68 (TC) 16. The method according to item 12 of the patent application, wherein the annealing step is performed at a temperature between 530 and 680 ° C. 17. The method according to item 12 of the patent application, wherein the first TiN film It has a thickness between 10 and 100 A. 18. A method for manufacturing a semiconductor substrate, comprising the steps of: (a) forming an insulating film having a contact hole on the semiconductor substrate; (b) forming a Ti film on the contact On the inner wall of the hole; (c) a process of forming a TiN film on the Ti film by a CVD method using a source gas composed of a mixture of TiCl4 gas and NH3 gas, and annealing the TiN film in an NH3 atmosphere, and repeating this process The process is at least two times to form a multilayer TiN film. The steps of forming a multilayer TiN film include the following steps: 3 Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) .......... ............... V -.............. Order ...... 槔 ( Please read the back (Please fill in this page again for the matters needing attention) 483141 Section C8 D8 VI. Patent application scope Use a source gas supplied with a first gas flow ratio with a predetermined TiCUiNH3 gas flow ratio to form a TiN film to protect Ti; and use TiCl4 for NH3 A source gas supplied by a second gas flow ratio with a gas flow ratio greater than the first gas flow ratio to form a main TiN film; and (d) forming a metal plug on the multilayer TiN film, wherein the first gas flow The ratio and the ratio of the second gas flow are each selected between 0.02 and 0.1. .19. According to the method of claim 18, wherein the step of forming a protective Ti film includes the steps of: Forming a first TiN film having a thickness of 10 to 100A on the Ti film with a source gas having a first gas flow ratio of 0.05; and annealing the first TiN film in an NΉ3 atmosphere and forming a main TiN film include The steps include: forming a second TiN film on the TiN film protecting the Ti film by using a source gas having a second gas flow ratio between 0.02 and 0.1; and Annealing in NH3 atmosphere. 20. The method according to item 18 of the scope of patent application, wherein the step of forming a multilayer TiN film further includes a step of forming a TiN film on the main TiN film to prevent oxygen diffusion. The method of item 20, wherein the step of forming a TiN film to prevent oxygen diffusion includes the steps of: forming a third TiN film with a thickness of 10 to 100A on the main TiN film using a source gas; and 4 the paper size is applicable to Chinese national standards (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) V · Line 483141 A8 B8 C8 D8 VI. Application for patent scope Anneal this third TiN film in NH3 atmosphere 5 (Please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990009184A KR100331545B1 (en) | 1998-07-22 | 1999-03-18 | Method of forming multi-layered titanium nitride film by multi-step chemical vapor deposition process and method of manufacturing semiconductor device using the same |
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| TW483141B true TW483141B (en) | 2002-04-11 |
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| TW87121616A01 TW483141B (en) | 1999-03-18 | 1999-05-25 | Method of forming multilayer titanium nitride film by multiple step chemical vapor deposition process and method of manufacturing semiconductor device using the same |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6893963B2 (en) | 2003-04-04 | 2005-05-17 | Powerchip Semiconductor Corp. | Method for forming a titanium nitride layer |
| TWI463543B (en) * | 2009-01-05 | 2014-12-01 | Ibm | Method of forming gate stack and structure thereof |
-
1999
- 1999-05-25 TW TW87121616A01 patent/TW483141B/en active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6893963B2 (en) | 2003-04-04 | 2005-05-17 | Powerchip Semiconductor Corp. | Method for forming a titanium nitride layer |
| TWI463543B (en) * | 2009-01-05 | 2014-12-01 | Ibm | Method of forming gate stack and structure thereof |
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