五、發明說明（） 發明領城： 本發明係有關於半導體製程中電鍍金屬時晶片之預 濕處理系統及其方法，特別是有關於電鍍金屬時利用喷麗 裝置對晶片表面均勻塗佈流體，以利於形成金屬凸塊。 發明背 全球的工業發展趨勢中，電子、資訊及通訊已成為產 值最龐大且成長迅速的產業，不論是主被動元件業、及電 子材料業均以隨身攜帶性、高功能及高密度為主要目標， 以及滿足輕薄短小之電子產品相關技術，進行技術上的提 升與整合’特別是晶片封裝產業上的大幅變化。 目前的封裝技術中，覆晶（Flip Chip)技術提供了最大 的輸出/輸入（I/O)數和封裝密度，而在覆晶技術中最基本 的步驟便是晶片凸塊（Bllmp)的製造，晶片凸塊通常是一多 層金屬埋層（Under Bump Metal, UBM)的結合，其功能包含 熱電極的吸附，擴散障礙層及潤溼性，且必須避免層與層 之間的反應。並且在金屬埋層（UMB)上電鍍金屬材料，以 作為導電性之金屬凸塊。 特定而了 ’在電鍍金屬的過程中，必須先對晶片進行 預濕處理，以利於形成完整金屬凸塊，並避免在晶片表面 上之開孔内形成氣泡或空孔，進而阻礙電性傳導功能。第 1 -2圖繪示傳統晶片1 〇〇之預濕處理系統及方法，首先在 步驟202中’將晶片100由卡夾（Cassette)中取出，並置於 晶片架102中。在步驟204中，將晶片架1〇2置於水槽1〇4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 ▼ · H ·ϋ ϋ n n I 一-eJ傷 wa a···· K··· SHM I I ϋ n n I an n ϋ n d ί I n n n ϋ n n ϋ ϋ - 483040 A7 r*------ -—-- 五、發明說明（） 中，並以手動方式浸泡在水槽丨〇4中的晶片架1 02，以使 電鍍液106分布在晶片1〇〇表面上。在步驟206中，對晶 片100進行電鍍金屬的處垤，在晶片丨〇〇表面上之開孔（未 標不）内形成電鍍金屬凸塊（未標示）。在步驟2 0 8中，沖洗 晶片1 00以去除殘留在晶片i 〇〇表面之電鍍液1 06。 然而傳統的晶片1 00以手動方式進行預濕處理，以及 電鍍液的表面張力作用，對於封裝尺寸日益縮小的趨勢’ 勢必使晶片1 00的預濕效果不佳，導致金屬凸塊中包含許 多2孔、氣泡，甚至於後續的高溫迴銲製程時破壞了金屬 凸塊的導電性，造成了導電線路斷裂的現象。而且，傳統 的預濕處理方法的自動化程度不足，亦即僅僅使用手動的 處理方式進行晶片的預濕處理，故無法滿足目前大量產品 製造的需求。 述 概 及 的 目 明 發 0 勻 均 面 表 片 晶 對 置 裝 灑 噴 用 利 為 的 目 要 主 明 發 本 凸 成 形 積 沈 性 電 導 之 體 流 由 藉 時 屬 金 鍍 電 於 利 以 體 流 。 佈塊 --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 以 動 移 對 相， 直孔 垂開 的之 置上 裝面 灑表 嘴片 與晶 片滿 晶填 用並 利入 為注 的地 目利 | 順 另體 流 使 產 了 低 降 移 的 片 晶 行 進 備。 設率 化效 動產 自 生 用升 利提 的與 目本 一 成 再造 製 品 之體 片流 晶 ： 時含 屬包 金少 鍍主 電統 種 系 一 理 出處 提濕 明預 發此 本， ， 法 的、万 目其 之及 述統 上系 據理 根處 濕 預 適 度 一尺 張 紙 本 1297 X 10 2 /V 格 規 :4 A一⑸ N (C 準 標 家 國 國 483040 A7 B7 五、發明說明（ 供應裝置’用以提供預濕處理系統所需之流體，並利用幫 浦輸送流體以及調節流體的壓力。流量調節裝置連接至寶 浦’以調節來自流體供應裝置所輸出之流體的總流量，並 將總流量即時呈現於顯示螢幕上。壓力轉換器，連接至流 量調節裝置，以傳遞流體的壓力。 嘴濃裝置，連接至流量調節裝置，噴灑裝置具有多個 喷射模組，其中每個嘴射模組由多個噴嘴組成，且每個噴 嘴的噴射方向垂直於晶片的表面，藉由控制流體的懷 力以及流量，以將流體強制注入晶片表面上之開孔。多個 晶片承載架1以放置晶片’且每個晶片承載架對應置放 每片曰曰曰彳’且每個噴射I组的嗜射區域可涵蓋每片晶片， 以使流體均勻地分布於晶片表面上。 流體槽’位於晶片承載架下方，以儲存噴射模組喷出 流體後所流下之部份流體，並適時將部份流體排出。高度 調節裝置，用以調整位於流體槽上方之晶片承載架的高 度’使晶片承載架來回地於流體槽上方進行垂直移動，使 得噴射模組完全涵蓋晶片表面。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) _裝------- —訂---------線 經濟部智慧財產局員工消費合作社印製 用壓位片線上流 使總的晶法片將 先的片個之晶 ， 首體晶多 面在量 • · 流動之表後>if 騾節移方片最及 步調。上晶。以 列且量槽於動力 下，流體直移壓 含體總流垂復出 包流的於以往射 少送體位架行的 至輸流整載進體 ， 並節調承方流 時取調置片上射 作汲置裝晶槽噴 操置裝節使體制 理裝節調以流控 處應調度，在由 濕供量高度地藉 預體流用高回 ， 行流用使的來體 進於利係架，流 浦。 ，載向灑 幫力置 承方噴 經濟部智慧財產局員工消費合作社印製 483040 A7 __B7 五、發明說明（） 體強制注入晶片上，使流體注入並停留在開孔之内，以便 於後續電鍍金屬時，利用流體的電性傳導作用，於開孔内 形成金屬凸塊。 總之，本發明之預濕處理系統及其方法，至少具有下 列優點：（1)進行電鍍之前使晶片獲得最佳的浸泡效果， 以改善電鍍金屬凸塊或是薄膜之最佳品質。（2)降低晶片 報廢的產生，以提高產品的良率。 5-4圖式簡單說明： 第1圖繪不傳統的晶片於電鍵金屬時之預濕處理系統， 第2圖繪示傳統的晶片於電鍍金屬時之預濕處理流程； 第3圖繪示依據本發明一較佳實施例之一種電鍍金屬時晶 片之預濕處理系統； 第4圖繪示依據本發明預濕處理系統之局部噴灑裝置側視 圖；以及 第5圖繪示依據本發明一較佳實施例之一種電鍍金屬時晶 片之預濕處理流程。 5-5圖號對照說明： 100 晶 片 102 晶 片 架 104 水 槽 106 電 鍍 液 300 預 濕 處 理 系統 302 流 體 供 應 裝 置 304 幫 浦 306 流 量 調 々/r 即 裝 置 308 壓 力 轉 換 器 309 喷 灑 裝 置 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) _裝--------1T------------------ ------------ 483040 A7 _______B7 五、發明說明（） 3 10 控制開關 3 12 流量調節閥 3 14 喷射模組 316 噴嘴 3 18 晶片承載架 320 流體槽 322 高度調節裝置 324 晶片 400 開孔 5-6 發明詳細說明： (請先閱讀背面之注意事項再填寫本頁) 本發明針對習知技術的缺失提供完整的解決方法。茲 以圖式輔助說明，詳述一種電鍍金屬時晶片之預濕處理系 統及其方法。 首先請參閱第3圖，其繪示本發明之電鍍金屬時晶片 之預濕處理系統3 00。此預濕處理系統3 00至少包含流體 供應裝置3 02、流量調節裝置3 06、壓力轉換器3 08、噴灑 裝置309、晶片承載架318、流體槽320以及高度調節裝 置 322。 經濟部智慧財產局員工消費合作社印製 流體供應裝置3Ό2，用以提供預濕處理系統3 00所需 之流體來源，流體例如可為純水或是電鍍液，並利用幫浦 3 04輸送流體以及適當調節流體的壓力，其中幫浦3 04例 如可為壓力幫浦。流量調節裝置3 0 6連接至幫浦3 0 4，以 調節來自流體供應裝置3 02所輸出的流體之總流量，並網1 流體的總流量以圖案或文字方式即時呈現在顯示螢幕（未 標示）上，以利於操作人員監控流體的流動狀況。壓力轉 換器308連接至流量調節裝置306，以轉換傳遞流體的壓 力，藉以分配控制流體噴射所需的壓力。 6 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公釐) 經濟部智慧財產局員工消費合作社印製 483040 A7 B7__ 五、發明說明（） 配合參閱第4圖，本發明預濕處理系統3 0 0之局部噴 灑裝置3 0 9側視圖。噴灑裝置3 0 9連接至流量調節裝置 3 0 6，且噴灑裝置3 0 9具有多個喷射模組3 1 4、多個控制開 關3 1 0、多個流量調節閥3 1 2，其中每個喷射模組3 1 4由 多個噴嘴316(Nozzle)組成，每個噴嘴316的流體噴射方 向垂直於晶片3 2 4的表面，藉由控制噴射流體的噴射壓力 以及流量，將流體強制注入晶片324表面上的開孔400， 其中開孔可為晶片324上由光組薄膜所定義冬孔洞，且開 孔400用於形成晶片凸塊（Bump)，而晶片凸塊可為一多層 金屬埋層（UBM)複合材質。每個控制開關310連接至壓力 轉換器，控制開關310例如可為氣動閥（Air Valve)，用以 啟動/關閉噴射模組3 1 4的動作。每個流量調節閥3 1 2連接 至控制開關3 1 0，以控制每個噴射模組3 1 4的流體流量， 並顯示流體流量以利於控制操作。 由於適當的噴射壓力及流量可使流體的霧化程度更 高，亦即克服流體的表面張力作用，而使流體順利地注入 並停留在每一個開孔400之内，以便於後續電鍍金屬時， 利用流體的電性傳導作用’使得在每個開孔4〇〇内沈積形 成金屬凸塊的過程中，避免了氣泡或空孔的產生，以形成 緻密較佳之金屬凸塊，其中電鍍的金屬例如可為銅（Cu)金 屬，流體例如可為電鍍液或純水。若使用純水作為流體 時，由於純水被強制性地填入開孔4 〇 〇中，除了可產生較 佳的清潔效果之外，更可避免在開孔4〇〇内產生氣泡或空 孔的機率。 7 本紙張尺度適用中國國家標準（CNS)A7^格⑵G χ 297公髮1----- -----------^--------1---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 483040 五、發明說明（ 本發明較佳實施例中，嗜射流體壓力的較佳範圍約為 〇.5至4 kg/Cm2,其對應的晶片324與噴嘴316出口之間 的距離約為3 0至丨8〇 cm ;更 喷 又住的1射泥體壓力範圍約為 1·5至2.5 kg/Cm2,其對應的晶片324與噴嘴出口之間 的距離約為60至丨4〇 cm。 曰 請再參閱第3圖’預濕處理系統3〇〇之晶片承載架 用以放置多個晶片324，且每個晶片承載架318對應 置放一片晶片324,其中每個噴射模組314的噴射區域可 涵蓋一晶片324 ,或可藉由移動晶片承載架318的方式， 以使流體均勻地分布於晶片324表面上所有的開孔4〇〇。 在本發明實施例中，較佳之晶片承載架3丨8的數量為1至 6個，並且分別對應使用i至6個噴射模組3 14，其中以2 個晶片承載架3 1 8為最佳，並對應使用兩組噴射模組 3 14° 流體槽320位於晶片承載架318的下方，以儲存嘴射 模組3 1 4噴出流體後所流下之部份流體，並可適時將此部 份的流體由出口（未標示）排出。另外，當晶片必須在空氣 中停留較久時，可利用流體供應裝置302提供足夠的流 體，經由輸送管路注入流體槽320中，以完全浸潤整個晶 片3 2 4 ’以保留每個開孔4 0 0内的流體直到後續之電鍵製 程步驟開始為止。 高度調節裝置3 22，用以調整位於流體槽3 2 〇上方之 晶片承載架3 1 8的高度，亦即使晶片承載架3 1 8以垂直於 晶片3 2 4表面法線之方向，來回地在流體槽3 2 0上方進行 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I an» I aaw aiMt mm I I · n n n n ·ϋ ·ϋ n 一 OT t n an n f ϋ an n I (請先閱讀背面之注意事項再填寫本頁) 483040 A7V. Description of the invention () The invention of the leading city: The present invention relates to a pre-wet processing system and method for wafers during metal plating in semiconductor manufacturing processes, and in particular, to uniformly coating fluid on wafer surfaces by spray spraying devices during metal plating, To facilitate the formation of metal bumps. Inventing the global industrial development trend, electronics, information and communication have become the industries with the largest output value and rapid growth. Both the active and passive component industries and the electronic materials industry have their main goals of portability, high functionality and high density. , And to meet the thin and short electronic products related technology, to carry out technical upgrades and integration ', especially the major changes in the chip packaging industry. In the current packaging technology, flip chip technology provides the largest number of output / input (I / O) and packaging density, and the most basic step in flip chip technology is the manufacturing of chip bumps (Bllmp) The wafer bump is usually a combination of a multi-layer buried metal (UnBM metal) layer, and its functions include the adsorption of a hot electrode, a diffusion barrier layer, and wettability, and the reaction between layers must be avoided. A metal material is plated on the buried metal layer (UMB) as a conductive metal bump. Specific "In the process of electroplating metal, the wafer must be pre-wetted to facilitate the formation of complete metal bumps, and to avoid the formation of air bubbles or voids in the openings on the surface of the wafer, thereby hindering the electrical conduction function . Figures 1-2 show a conventional pre-wet processing system and method for wafer 1000. First, in step 202 ', the wafer 100 is taken out of the cassette and placed in the wafer holder 102. In step 204, the wafer holder 102 is placed in the water tank 104. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) Economy Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau ▼ · H · ϋ ϋ nn I 一 -eJJwa a ···· K ··· SHM II ϋ nn I an n ϋ nd ί I nnn ϋ nn ϋ ϋ-483040 A7 r * ------ ---- 5. In the description of the invention (), and manually immersed the wafer holder 102 in the water tank 〇 04, so that the plating solution 106 is distributed on the surface of the wafer 100. . In step 206, a metal plating process is performed on the wafer 100 to form plated metal bumps (not labeled) in the openings (not labeled) on the wafer surface. In step 208, the wafer 100 is rinsed to remove the plating solution 106 remaining on the surface of the wafer 100. However, the conventional wafer 100 is manually pre-wetted, and the surface tension of the plating solution has a tendency to shrink the package size. It will inevitably make the wafer 100's pre-wetting effect poor, resulting in many metal bumps containing 2 Holes, bubbles, and even subsequent high-temperature reflow soldering processes destroy the conductivity of the metal bumps and cause the phenomenon of conductive circuit breakage. In addition, the conventional pre-wet processing method is not sufficiently automated, that is, the manual pre-wet processing is only used for wafer pre-wet processing, so it cannot meet the current demand for large-scale product manufacturing. The general purpose of the Mingmingfa 0 Uniform surface of the surface of the crystal is opposite to the installation of spraying the purpose of the main purpose of the hair convex convex shape accumulation of the conductivity of the body flow by the time of gold plating to facilitate the body flow . Cloth -------------------- Order --------- Line (Please read the precautions on the back before filling this page) Intellectual Property of the Ministry of Economic Affairs Bureau ’s Consumer Cooperative Co., Ltd. printed to move the phase, the vertical hole is placed on the top surface sprinkler nozzle and wafer full crystal fill and pay attention to the advantages | The moved wafers are ready. Suppose that the liquid crystals of the self-used Shengliti of the movable property and the original remanufactured products are crystallized: when it contains the gold-plated and less-plated main electrical system, the source is provided by Humidity, and the legal The above description is based on the reason that the wet pre-moderate one-foot piece of paper is 1297 X 10 2 / V. Gage: 4 A ⑸ N (C quasi-standard country 483040 A7 B7 V. Description of the invention (The supply device is used to provide the fluid required by the pre-wet processing system, and uses the pump to transport the fluid and adjust the pressure of the fluid. The flow adjustment device is connected to Baopu 'to adjust the total flow of the fluid output from the fluid supply device, and The total flow is instantly displayed on the display screen. The pressure converter is connected to the flow adjustment device to transmit the pressure of the fluid. The mouth thickening device is connected to the flow adjustment device. The spray device has multiple spray modules, each of which shoots The module is composed of multiple nozzles, and the spray direction of each nozzle is perpendicular to the surface of the wafer. By controlling the force and flow of the fluid, the fluid is forcibly injected into the surface of the wafer. Opening holes. Multiple wafer carriers 1 are used to place wafers, and each wafer carrier is placed correspondingly to each wafer, and each ejective area of jet group I can cover each wafer to make the fluid uniform. It is distributed on the surface of the wafer. The fluid tank is located under the wafer carrier to store part of the fluid flowing down after the ejection of the fluid from the spray module, and to discharge part of the fluid in a timely manner. The height adjustment device is used to adjust the fluid tank. The height of the upper wafer carrier makes the wafer carrier vertically move back and forth above the fluid tank, so that the spray module completely covers the wafer surface. This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling out this page) _Installing ------- --Ordering --------- Online Streaming of Tablets for Consumer Cooperatives Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs The total crystal film will be the first piece of crystal, the first body crystal is multifaceted in the quantity • · After the flow of the table > if 骡 移 The square piece is the most pacing. Upper crystal. Columns and measuring grooves under power, Fluid Straight Transient Pressure Included Total Flow Droop Recovery Package In the past, the shooting was carried to the body, and the flow was carried into the whole body, and when adjusting the flow of the receiver, the setting sheet was shot as the sink device, the spraying device was installed, and the system was adjusted to control the flow. It should be scheduled to use the high supply of pre-flow and high-recycling from the wet supply, and the flow of the flow to the profit system and the flow. The load is sent to the sprinkler to support the contractor to spray the employee ’s consumer property cooperatives of the Ministry of Economic Affairs ’Intellectual Property Bureau. Printed 483040 A7 __B7 V. Description of the invention () The body is forcibly injected into the wafer, so that the fluid is injected and stays in the opening, so that when the metal is electroplated later, the electrical conductivity of the fluid is used to form a metal protrusion in the opening. Piece. In summary, the pre-wet processing system and method of the present invention have at least the following advantages: (1) the wafer is best immersed before electroplating to improve the best quality of the plated metal bumps or films. (2) Reduce the occurrence of wafer scrap to improve the yield of the product. Figure 5-4 is a simple explanation: Figure 1 shows the pre-wet processing system for unconventional wafers when bonding metal, Figure 2 shows the pre-wet processing process for traditional wafers when plating metal; Figure 3 shows the basis A preferred embodiment of the present invention is a wafer pre-wet processing system for metal plating; FIG. 4 shows a side view of a local spraying device of the pre-wet processing system according to the present invention; and FIG. 5 shows a preferred spraying system according to the present invention. The embodiment of the present invention provides a pre-wetting process for a wafer during metal plating. 5-5 drawing number comparison description: 100 wafers 102 wafer racks 104 water tank 106 electroplating solution 300 pre-wet processing system 302 fluid supply device 304 pump 306 flow rate adjustment / r namely device 308 pressure converter 309 spraying device 5 paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling out this page) _ 装 -------- 1T ---------- -------- ------------ 483040 A7 _______B7 V. Description of the invention () 3 10 Control switch 3 12 Flow regulating valve 3 14 Injection module 316 Nozzle 3 18 Wafer carrier 320 fluid tank 322 height adjustment device 324 wafer 400 opening 5-6 Detailed description of the invention: (Please read the precautions on the back before filling this page) The present invention provides a complete solution to the lack of conventional technology. With the aid of diagrams, a pre-wet processing system and method for wafers during metal plating are described in detail. First, please refer to FIG. 3, which shows a wafer pre-wet processing system 300 when electroplating metal according to the present invention. The pre-wet processing system 300 includes at least a fluid supply device 302, a flow adjustment device 306, a pressure converter 308, a spray device 309, a wafer carrier 318, a fluid tank 320, and a height adjustment device 322. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed a fluid supply device 3Ό2 to provide a fluid source required by the pre-wet processing system 300. The fluid can be pure water or electroplating solution, for example, and pump 30 04 is used to transport the fluid and The pressure of the fluid is appropriately adjusted, and the pump 304 may be, for example, a pressure pump. The flow adjustment device 3 0 6 is connected to the pump 3 0 4 to adjust the total flow of the fluid output from the fluid supply device 3 02, and the grid 1 is displayed in a pattern or text on the display screen (not marked) ) To facilitate the operator to monitor the flow of the fluid. A pressure converter 308 is connected to the flow regulating device 306 to convert the pressure of the transferred fluid, thereby distributing the pressure required to control the ejection of the fluid. 6 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 483040 A7 B7__ 5. Description of the invention () Refer to Figure 4 for the pre-wet treatment of the present invention. Side view of the system 300's local spraying device 309. The spraying device 3 0 9 is connected to the flow regulating device 3 0 6 and the spraying device 3 9 has multiple spray modules 3 1 4, multiple control switches 3 1 0, multiple flow regulating valves 3 1 2, each of which The jetting module 3 1 4 is composed of a plurality of nozzles 316 (Nozzle). The fluid jetting direction of each nozzle 316 is perpendicular to the surface of the wafer 3 2 4. By controlling the jetting pressure and flow rate of the jetting fluid, the fluid is forcibly injected into the wafer 324. An opening 400 on the surface, where the opening may be a winter hole defined by a light group film on the wafer 324, and the opening 400 is used to form a wafer bump, and the wafer bump may be a multilayer metal buried layer (UBM) composite material. Each control switch 310 is connected to a pressure converter. The control switch 310 may be, for example, an air valve for activating / deactivating the injection module 3 1 4. Each flow regulating valve 3 1 2 is connected to a control switch 3 1 0 to control the fluid flow of each injection module 3 1 4 and displays the fluid flow to facilitate control operation. Due to the proper spray pressure and flow rate, the fluid can be atomized to a higher degree, that is, the surface tension of the fluid is overcome, and the fluid is smoothly injected and stays within each of the openings 400 to facilitate subsequent metal plating, The use of the fluid's electrical conduction effect allows the metal bumps to be deposited and deposited in each of the openings to avoid the formation of air bubbles or voids, so as to form dense and better metal bumps. The electroplated metal such as It may be copper (Cu) metal, and the fluid may be, for example, a plating solution or pure water. If pure water is used as the fluid, since pure water is forcibly filled into the openings 400, in addition to producing a better cleaning effect, air bubbles or voids can be avoided within the openings 400. Chance. 7 This paper size applies to China National Standard (CNS) A7 ^ Grid⑵G χ 297 Public 1 ----- ----------- ^ -------- 1 ---- ----- Line (Please read the notes on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 483040 5. Description of the Invention (In the preferred embodiment of the present invention, The range is about 0.5 to 4 kg / Cm2, and the distance between the corresponding wafer 324 and the outlet of the nozzle 316 is about 30 to 80 cm; the more sprayed and lived 1 mud pressure range is about 1. 5 to 2.5 kg / Cm2, the distance between the corresponding wafer 324 and the nozzle outlet is about 60 to 40 cm. Please refer to Figure 3 again for the wafer carrier of the pre-wet processing system 300 for placement Multiple wafers 324, and each wafer carrier 318 correspondingly places a wafer 324. The spray area of each jetting module 314 may cover a wafer 324, or the wafer carrier 318 may be moved to make the fluid It is evenly distributed on all the openings 400 on the surface of the wafer 324. In the embodiment of the present invention, the number of the preferred wafer carriers 3 丨 8 is 1 to 6, and they are used correspondingly. i to 6 jetting modules 3 14 of which 2 wafer carriers 3 1 8 are the best, and correspondingly use two sets of jetting modules 3 14 °. The fluid tank 320 is located below the wafer carrier 318 to store nozzle shots. Module 3 1 4 Part of the fluid that flows down after the fluid is ejected, and this part of the fluid can be discharged from the outlet (not labeled) in time. In addition, when the wafer must stay in the air for a long time, the fluid supply device can be used 302 provides sufficient fluid and injects it into the fluid tank 320 through the conveying pipe to completely wet the entire wafer 3 2 4 ′ to retain the fluid in each of the openings 4 0 0 until the start of the subsequent keying process step. Height adjustment device 3 22, used to adjust the height of the wafer carrier 3 1 8 located above the fluid tank 3 2 0, even if the wafer carrier 3 1 8 is perpendicular to the surface normal of the wafer 3 2 4 back and forth in the fluid tank 3 2 0 The paper size above applies to China National Standard (CNS) A4 (210 X 297 mm) I an »I aaw aiMt mm II · nnnn · ϋ · ϋ n OT tn an nf ϋ an n I (Please read first (Notes on the back then fill out this page) 48304 0 A7
五、發明說明（） 經濟部智慧財產局員工消費合作社印製 垂直移動，以使噴射模組314完全涵蓋整個晶片324的面 積’其中高度調節裝置322例如可為自動化機械手臂，當 高度調節裝置322帶動晶片承載架3丨8的上下移動3至5 次之後’可使晶片324表面上的開孔4〇〇獲得最佳的潤濕 效果。 繼續參閱第5圖，其繪示本發明之電鍍金屬時晶片之 預濕處理方法。在步驟502中，使用幫浦304於流體供應 裝置3 02汲取並輸出流體，且調節流體的總壓力。在步驟 5 04中，利用流量調節裝置3 06調節流體的總流量。在步 驟506中，移動晶片324的位置，係使用高度調節裝置322 調整位於流體槽320上方之多個晶片承載架3丨8的高度， 以使日日片承載术J 1 8以垂豈於晶片3 2 4表面之法線方向， 來回地在流體槽3 2 0上方進行往復移動。此外調節流體總 流量與移動晶片位置之步驟可以同時進行，或者是依序進 行。 最後在步驟508中，在晶片324上噴灑流體，藉由控 制喷射流體的射出壓力以及流量，將流體強制注入晶片 3 2 4上，使流體注入並停留在開孔4 0 0之内，以便於後續 電鍍金屬時，利用流體的電性傳導作用，於開孔400内形 成金屬凸塊。 综上所述，本發明揭露電鍍金屬時晶片之預濕處理系 統3 0 0及其方法，至少具有下列優點：（1)進行電鍍之前 使晶片3 2 4獲得最佳的浸泡效果，以改善電鍍金屬凸塊或 是薄膜之最佳品質。（2)降低晶片324報廢的產生，以提 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) A7V. Description of the invention () The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the vertical movement so that the injection module 314 completely covers the area of the entire wafer 324. Among them, the height adjustment device 322 can be an automated robot arm, for example, when the height adjustment device 322 After the wafer carrier 3, 8 is driven to move up and down 3 to 5 times, the openings 400 on the surface of the wafer 324 can obtain the best wetting effect. Continuing to refer to FIG. 5, it shows a method for pre-wetting the wafer during the electroplating process of the present invention. In step 502, the pump 304 is used to draw and output fluid from the fluid supply device 302, and adjust the total pressure of the fluid. In step 504, the total flow of the fluid is adjusted using the flow regulating device 306. In step 506, the position of the wafer 324 is moved, and the height adjustment devices 322 are used to adjust the heights of the plurality of wafer carriers 3 丨 8 located above the fluid tank 320, so that the Japanese-Japanese film-bearing technique J 1 8 is vertical to the wafer. The normal direction of the 3 2 4 surface is reciprocated over the fluid tank 3 2 0 back and forth. In addition, the steps of adjusting the total fluid flow and moving the wafer position can be performed simultaneously or sequentially. Finally, in step 508, the fluid is sprayed on the wafer 324, and the fluid is forcibly injected into the wafer 3 2 4 by controlling the ejection pressure and flow rate of the ejected fluid, so that the fluid is injected and stays within the opening 4 0 0 in order to facilitate When metal is subsequently plated, a metal bump is formed in the opening 400 by utilizing the electrical conductivity of the fluid. In summary, the present invention discloses a wafer pre-wet processing system 300 and its method when electroplating metal, which has at least the following advantages: (1) the wafer 3 2 4 can obtain the best immersion effect before electroplating to improve electroplating The best quality of metal bumps or films. (2) Reduce the occurrence of 324 scraps of wafers in order to improve 9 paper sizes Applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) Packing -------- Order -------- -Line (Please read the notes on the back before filling in this page) A7
483040 五、發明說明（） 高產品的良率。 本發明已揭示較佳實施 明之實施，非用以限定本發明 僅用於幫助瞭解本發 者於領悟本發明之精神後\ <精神，而熟悉此領域技藝 内，當可作些許更動潤飾及等^不脫離本發明之精神範圍 产 木 寺同之變化替換，其專利保護 範圍*視後附之申請專利範圍及其等同領域而定。 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------線· 經濟部智慧財產局員工消費合作社印製 10 本紙張尺度適用中國國家標準（CNS)A4規格（2丨0 x 297公釐） ——1483040 V. Description of the invention () High product yield. The present invention has disclosed the implementation of the preferred embodiments, and it is not intended to limit the present invention to only help the understanding of the spirit of the present invention after the developer understands the spirit of the present invention, and those who are familiar with the art in this field can make some changes and retouch. Etc. Without departing from the spirit of the present invention, the same changes and replacements of the production of wooden temples, the scope of patent protection * depends on the scope of the attached patent application and its equivalent fields. (Please read the precautions on the back before filling out this page) Packing -------- Order --------- Line · Printed by the Intellectual Property Bureau Staff Consumer Cooperatives of the Ministry of Economy 10 This paper size applies to China National Standard (CNS) A4 specification (2 丨 0 x 297 mm) ——1