TW480820B - Charge/discharge circuit enabling fast reaction for energy storage device - Google Patents

Abstract

The present invention relates to a charge/discharge circuit, in particular, a charge/discharge circuit enabling faster reaction for an energy storage device. The circuit includes a PNP transistor whose on/off state is controlled by a diode; an NPN transistor placed in the discharge circuit and whose on/off state is controlled by at least one photodiode; and a capacitor placed between the photodiode and the NPN transistor. During the charging process, the charging current conducts through the diode and causes the transistors to turn-off to reduce the leakage and to achieve faster charging. At the same time, the photodiode activated by the illuminating light source causes the capacitor to accumulate a certain amount of negative charges to produce a negative potential. Therefore, the discharging current influenced by the negative potential of the capacitor conducts through the discharge circuit more readily than being influenced by the grounded zero potential during the discharging process and fast discharging is achieved.

Description

480820

The invention relates to a charge and discharge circuit, especially a charge and discharge circuit that can accelerate the reaction rate of an energy storage element. A capacitor provided on the discharge circuit can form a negative potential during the charging process, and during the discharge process Those who guide the discharge current through the discharge circuit to quickly complete the discharge effect. , According to the conventional use of a semiconductor switching element formed charging and discharging circuit, such as U.S. Patent No. 4,754,175, by] (〇5 & 7 & 31116 七 & 1.

"SOLID STATE RELAY HAVING A THYRISTOR SIDCHARGE CIRCUIT" "The charging and discharging circuit is mainly composed of a plurality of diodes and resistance elements." During its charging process, in order to quickly charge the charging current and reduce the leakage condition, its resistance A larger value must be selected; when discharging: the discharge current cannot be conducted quickly because of the large resistance, so that the effect of rapid discharge cannot be achieved. Conversely, if a resistor with a smaller value is selected, the effect of rapid discharge can be achieved, but during the charging process, the so-called leakage phenomenon is likely to occur and the charging speed is reduced. Therefore, the choice of the resistance material often troubles the circuit designer. In addition, the conventional charging and discharging circuit is composed of too many components, which increases the difficulty of the process. Furthermore, since the charging and discharging circuit is designed to use the ground potential as the minimum potential during discharge, its discharge rate has a certain limit, and it is difficult to improve its discharge effect. For this purpose, another conventional charging and discharging circuit is applied. As shown in FIG. 1, it is US Patent No. 4,931,656, which is disclosed by EhaIt et al. "MEANS TO DYNAMICALLY DISCHARGE A CAPACTITI VELY CHARGED" ELECTRICAL DEVICE ", its charge and discharge circuit is mainly composed of a resistor 40, NPN transistor 44 and a photodiode 42,

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The photodiode 42 is used as the switching control of the transistor 44 to achieve the purpose of the charge and discharge circuit planning. When the light-emitting diode array 20 is driven by sufficient power to generate a light source, 'the photodiode array 3 on the other side will be coupled and induced to generate a charging current.' This charging current will flow in the direction of the energy storage element 50 according to the line ^. (As shown by the dotted arrow on top), due to the blocking effect of the resistor 40, most of the charging current will continue to flow in the direction of the energy storage element 50 (such as the effective transistor shown in this figure) according to the line C2. At the same time, since the photodiode 42 is also subjected to the light-induced coupling current, it will flow to the emitter terminal E of the transistor 44 in accordance with the line C3, and cause the transistor 44 to form an open and closed state, so the charging current is also The leakage phenomenon cannot be caused by the transistor 44 path, so the purpose of fast charging can be achieved. During the discharge process, because the photodiode 42 does not irradiate and stops generating electricity μ, the discharge current generated from the field effect transistor 50 will follow through the circuit D3 and the resistor 46 to reach the base of the transistor 44. Extreme B: The base B and the emitter E of the transistor 44 are turned on to form an open circuit between the collector C and the emitter E of the transistor 44. Therefore, most of the discharge current can follow the line D1 and the transistor 44. And the line D2 is grounded to achieve the purpose of discharge. Although the second conventional charging and discharging circuit has the effect of fast charging and discharging, since the conventional charging and discharging circuit 40 still has a resistor 46, the defects generated by the resistor 46 cannot be effectively solved fundamentally. In addition, the charge-discharge circuit still uses the ground zero potential as the minimum potential of the discharge circuit, and it still has a certain rate limit during the discharge process. The main purpose of the present invention is to provide an energy storage element reaction

480820

20 Light-emitting diode array 40 Charge and discharge circuit 44 Transistor 50 Energy storage element 72 External photodiode 80 Charge and discharge circuit 83 Internal photodiode 85 Internal energy storage element 88 Second phototransistor photodiode resistance 42 46 70 74 82 84 C1 Light-emitting diode external energy storage element ^ —diode first —transistor 8 6 are all first diode Q, D1 ~ d5 line% #See Figure 2 for a driver of the invention Charge and discharge

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V. Description of the invention (4) Circuit structure diagram; as shown in the figure, the charge-discharge circuit 8 of the present invention mainly includes a first diode 82 which can be connected to at least one external photodiode 72, and one connected to The first transistor 84 (such as the PNP transistor of this embodiment) at the output end of the first diode 82, and an internal energy storage element 8 5 (such as the capacitor of this embodiment) connected to at least one internal photodiode μ ), A second transistor 88 (such as the NPN transistor of this embodiment) and a first diode 86 connected to the internal energy storage element 85. Among them, the emitter terminal E of the ρνρ transistor 84 is connected to the output terminal of the _diode 82, and its base terminal B can be connected to the external pole C 'of the external photodiode and the NP transistor 88, and the extreme terminal C Then it is connected to the base terminal B of the νρν transistor 88. In addition to one terminal of the capacitor 85, it can be connected to the input terminal E ′ of the NPν transistor ^ 88, and it can also be connected to the input terminal of the second diode 86. The output terminal of the diode 86 is connected to the base terminal B of the NPN transistor 88. During the charging process, at least one light-emitting diode 70 is supplied with sufficient power to generate an illumination light source, and is coupled to an external photodiode 7 2 to form a charging current. The charging current will flow through the line C1 to the first diode 82 and the line C3. At this time, due to the voltage drop effect caused by the first diode 82, the radiated extreme E potential of the ρΝρ transistor 84 is caused. The B. potential is lower than the base terminal, so that the ρNρ transistor 84 is formed in an open state. At the same time, since the internal photodiode 83 is also illuminated by the light source of the light-emitting diode 70 to form a current \ and follow the line C4, the current can be a capacitor, a MOS field-effect transistor, or an insulated gate bipolar monopole ( The internal energy storage element 85 composed of IGBT) causes the capacitor 85 to form a negative potential lower than the ground zero potential at one end connected to the NPN transistor 88. And the base terminal B ′ potential of the PN transistor 88 is pressed by the second diode 86

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480820

The NPN transistor 88 will be in an off-closed state than its emitter E 'transistor. When the transistor 8 is broken, the charging current will continue to follow when it is turned off; the circuit C2 will quickly reach the external energy storage element 74 'to complete the fast charging purpose without increasing the leakage path. ^ ^ 'During the discharge process, the discharge current released by the external energy storage element 74 is blocked by the first diode 82 and will follow the line D1 to the emitter terminal e of the PNP transistor 84, because the emitter terminal of the PNp transistor 84 The E potential is higher than the base potential B, so it will also turn on the line between the emitter and the base B, and the line between the collector C and the base b, causing the pNp transistor 84 to become a path-opening cancer. Partial discharge current flows to the base terminal B ′ of the NpN transistor 88 through the line D3. The NPN transistor 88 is affected by the discharge current. The potential at the base terminal B 'will be higher than the potential at the emitter terminal E, so the emitter will be turned on in sequence, the line between the base terminal B', the collector C, and the base B. The intermediate circuit causes the NPN transistor 88 to also become a path open state. Affected by the negative potential of the capacitor 85 which is lower than the ground zero potential, the discharge current can be quickly guided through the pNp transistor 84, line D4, NPN transistor 88 and line D5 to the capacitor 85, thereby achieving the purpose of fast discharge. . Due to the negative potential effect of the internal energy storage element 85 which is fixed in the discharge circuit of the present invention, the rate at which the discharge current can flow is obviously better than that of the conventional design in which the ground potential is the lowest potential of the discharge circuit. Effect 'Therefore, the discharge efficiency of the discharge current can be better than the conventional circuit structure. Furthermore, the present invention uses a combination design of a transistor and a diode to completely abandon the application of a conventional resistance element, so the resistance element can also be avoided.

480820

7 design flaws. Of course, the internal energy storage element of the present invention only adds f discharge effect, and in another embodiment, the internal energy storage element can be discarded with a combination of a diode and a transistor, and the same can be achieved by changing the M φ resistance element. Regrets to use. also. In addition, the external photodiode 72 and the internal photodiode 83 may also be used. The same photodiode array is provided, but the photodiode array is divided into two different driving direction arrays. The diode will flow upward when light is sensed, and the photodiode at the lower end will flow under light ^ ^. It should be a guide to the accelerating storage circuit at the appropriate time. It is not unreasonable that the patent is expensive. The better spirit is described above. On the contrary, the capacitor can only have a real new design for the discharge current. The members of the French invention have detailed the above-mentioned implementation examples into various variations. The present invention should be charged at a rate through discharge and its functions. The contents of the review, generalization and repair are related to the charge and discharge medium-sized electrical circuits. In order to have new tools and pray to learn about this decoration as early as possible, it is still a charge and discharge circuit electrical circuit, which can be negative. Those who have achieved both the technical and gender perspectives and progressiveness of the technical application. Those who apply for the invention of the drawing technique of the patented embodiment should be included in this book. The enhanced patent is issued. It is felt that only ‘the discharge effect in the process of discharge according to the design of the case is exactly the same as the previous one’. It is within the scope of the invention of the present invention.

480820 Brief description of the drawings Figure 1: is a structural diagram of a conventional charge and discharge circuit; and Figure 2: is a structural diagram of a preferred embodiment of the charge and discharge circuit of the present invention. Page 10

Claims (1)

480820 VI. Scope of patent application 1. A charge and discharge circuit capable of accelerating the reaction rate of energy storage elements, the main structure of which includes: a first diode, the input end of which can be connected to at least one external photodiode; A first transistor, the first contact of which is connected to the output terminal of the first diode, and a second contact of which can be connected to the external photodiode; a second transistor, of which the first contact is It can be connected to the second contact of the first transistor, and its second contact can be connected to the third contact of the first transistor and the output terminal of a second diode respectively; and an internal energy storage element One end is connected to the third and contact points of the second transistor, and the other end is connected to at least one internal photodiode 02. The charge-discharge circuit as described in item 1 of the patent application scope, wherein the The internal energy storage element is one of capacitors, M0S field effect transistors, insulated gate bipolar transistors, and combinations thereof. 3. The charge-discharge circuit according to item 1 of the scope of patent application, wherein the internal photodiode and the external photodiode system can be combined into a photodiode array. 4. The charge-discharge circuit according to item 1 in the scope of the patent application, wherein the first transistor system is a PNP transistor. 5. The charge and discharge circuit as described in item 4 of the scope of the patent application, wherein the first contact of the PNP transistor is the emitter terminal, the second contact is the base terminal, and the third contact is the collector terminal. 6 · The charge and discharge circuit as described in item 1 of the scope of patent application, wherein the first Page 11 480820 VI. Scope of Patent Application A transistor system is an NPN transistor. 7. The charge and discharge circuit as described in item 6 of the scope of the patent application, wherein the first contact of the NPN transistor is a set terminal, the second contact is a base terminal, and the third contact is an emitter terminal. Page 12