480613 5643 twf.doc/006 Β7 五、發明説明（/) 本發明是有關於一種晶圓淸洗裝置，且特別是有關於 一種濕式洗淨裝置。 ' 在超大型積體電路（ULSI)製程中，晶圓洗晶的技術及 潔淨度是影響晶圓廠製程良率的、元件品質以及可靠度的 重要因素。尤其當製程技術演進至深次微米以下的領域， 製造流程超過數百個步驟，對於晶圓淸洗的要求更趨嚴 謹，方能符合超潔淨度之要求。 洗淨的目的，主要是淸除晶圓表面上的髒污 (Contaimnation)，如微粒（partlcle)、有機物及無機金屬離子 等雜質。而對於製程中所使用的控片與檔片而言，基於成 本的考量，洗淨的目的除了淸除晶圓表面上的髒污之外， 尙須去除晶片上所形成之複晶砂層，以使留有氧化層的晶 圓能回收重複使用，達到節省成本之目的。 請參照第1圖，習知去除控、檔片上的複晶矽層的方 法係將晶圓10垂直放置於濕式洗淨系統50(Wet Bench Cleaning System)的淸洗槽52之中進行洗淨的步驟。淸洗 槽52之中係以1 ·· 10之氫氟酸與硝酸作爲洗淨溶液。進 行洗淨的步驟時，洗淨溶液可以溢流至回收槽54之中， 再透過液體輸送裝置56，使其自淸洗槽52的底部回流至 淸洗槽52之中。 第2A圖至第2C圖，係繪示習知進行洗淨步驟10秒、 20秒以及30秒三個時間點的控、檔片10之示意圖。 請爹造照第2A圖，將已形成有厚度爲1500.埃之複晶 矽層14與厚度爲1000埃之氧化層12的控片或檔片10， 3 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 、v" 經濟部智慧財產局員工消費合作社印製 480613 5643twf.doc/006 A7 ______B7_____ 五、發明説明（> ) 垂直放入於裝有1 : 10之氫氟酸與硝酸混合液之濕式洗淨 系統50 ’經過10秒鐘之後，由於硝酸的氧化力很高，因 此’晶圓10中先接觸混合液的部分，如圖示中區域16所 繪示之處者，會迅速產生氧化蝕刻反應，而將複晶矽層14 .去除，裸露出介於複晶矽層14與晶圓10之間的氧化層12。 .由於洗淨的時間很短，因此所裸露之氧化層12其厚度仍 維持在1000埃，暫時沒有任何的厚度損失。 當洗淨步驟持續進行至20秒時，請參照第2B圖所示。 晶圓10中則有將近一半以上的複晶矽層14被蝕刻去除， 而在洗淨步驟進行10秒鐘時即已暴露出來的氧化層12, 如圖示中區域16所繪示之處者，則因爲蝕刻液的持續侵 蝕而使其厚度減少至900埃左右。 請參照第2C圖，當晶圓10係持續進行60秒之洗淨 步驟之後，晶圓10上的複晶矽層14可完全被去除。然而， 留在晶圓10上的氧化層12,則因爲暴露於蝕刻液的時間 不同，而造成其厚度上的不同。舉例來說，對於洗淨步驟 進行至60秒方才暴露出來的氧化層12而言，如圖示中區 域18所繪示之處，其厚度仍維持在1000埃，然而，在洗 淨步驟進行10秒鐘時即已暴露出來的氧化層12,如圖示 中區域16所示之處，其厚度則已減少至700埃。 經由以上的實驗結果顯示，習知將控、檔片固定於淸 洗槽進行洗淨步驟的方式，其複晶矽層蝕刻的均勻度不 良，而且氧化層會遭受蝕刻的破壞而有厚度不均的現象。 爲使控、檔片發揮其作用，氧化層厚度差異過大的控、檔 4 本紙張尺度適用中國國家標準（CNS )~A4規格（21^^97公菱） (請先閲讀背面之注意事項再填寫本頁) .1¾. 訂 經濟部智慧財產局員工消費合作社印製 480613 5643twf.doc/006 A7 B7 五、發明説明（彡） 片，則必須將原有的氧化層去除，再重新形成另一層氧化 層。如此，將使得控、檔片的回收次數與數量大大地減少， 而增加製造的成本。 因此，本發明之目的就是在提供一種濕式洗淨裝置， .可用以改善濕式蝕刻複晶矽層的均勻度，避免過度蝕刻複 晶矽而對其下方之氧化層造成損失之現象。 本發明之再一目的是提供一種濕式洗淨裝置，可以增 加複晶矽控、檔片之回收次數，以減少晶圓的使用量。 根據本發明之上述目的，提出一種濕式洗淨裝置，此 裝置包括一淸洗內槽、一淸洗外槽、一液體循環輸送裝置、 一可轉動裝置。淸洗內槽係用以裝盛淸洗晶圓之用的淸洗 液円洗內槽之中的淸洗液可溢流至淸洗外槽，而藉由液 體循環輸送裝置再回流至淸洗內槽之中。而可轉動裝置， 係配置於淸洗內槽之中，用以承載待淸洗之晶圓，並使晶 圓可以以其法線爲轉軸轉動。此濕式洗淨裝置可以藉由晶 圓的轉動’而減少晶圓蝕刻均勻度之差異。 依照本發明實施例所述，上述之可轉動裝置至少包括 一傳動軸與一馬達，其中馬達係用以使傳動軸轉動，而傳 動軸則具有數個溝槽，用以固定晶圓之用，並且可以使得 晶圓可以以其法線爲旋轉軸轉動。 依照本發明實施例所述，上述之可轉動裝置包括一傳 動軸與一馬達，其中馬達係用以使傳動軸轉動之用；傳動 軸係用以固定放置有複數個晶圓之晶盒，並使晶圓以其法 線爲旋轉軸轉動。 5 本紙張尺度適用中國國家標隼（CNS ) A4規格（2!〇X297公釐） n-n lb- I I I I I ϋ I (請先閲讀背面之注意事項再填寫本頁) 訂· -線· 經濟部智慧財產局員工消費合作社印製 480613 A7 B7 5643tv/f.doc/006 五、發明説明（+) ---------,--衣 ~. I (請先閲讀背面之注意事項再填寫本頁) 此外，依照本發明實施例所述，上述之濕式洗淨裝置 更包括一鈍氣輸送管線。此鈍氣輸送管線係配置於淸洗內 槽之底部，其具有多個孔洞，可用以將鈍氣輸送至淸洗內 槽中。藉由鈍氣的輸入，可以在淸洗液之中產生氣泡，使 .淸洗液發生擾流，以增加其混合的均勻性，減少習知因爲 淸洗液黏度過大、難以流動所造成的蝕刻不均現象。 由於本發明在淸洗內槽之中配置可使晶圓轉動的可轉 動裝置，因此，晶圓在洗淨的過程中係屬於動態而非靜態， 故而可以彌補淸洗液黏度過大’難以流動，對於蝕刻均勻 度所造成之問題。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細 說明如下： 圖式之簡單說明： 第1圖爲習知一種濕式洗淨系統的示意圖； 第2A圖至第2C圖係繪示習知控、檔片10進行洗淨 步驟10秒、20秒以及30秒三個時間點的示意圖；以及 第3圖係繪示依照本發明實施例之一種濕式洗淨裝置 經濟部智慧財產局員工消費合作社印製 之示意圖； 第4圖係繪示依照本發明實施例之一種可轉動裝置之 示意圖；以及 第5圖係繪示依照本發明實施例之另一種可轉動裝簡 之示意圖。 圖示標記說明 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇><297公釐） 480613 經濟部智慧財產局員工消費合作社印製 5643twf.doc/006 A 7 B7 五、發明説明（炙） 10、99 :晶圓 12 :氧化層 14 ;複晶矽層 16、18 :區域 5 0 :濕式洗淨系統 52、102 :淸洗內槽 54、104 :淸洗外槽 56、106 :液體循環輸送裝置 1〇〇：濕式洗淨裝置 108 :可轉動裝置 109 :鈍氣輸送管線 110、112 :側壁 114、116 :端點 118 :幫浦 120 :過濾裝置 122、124 :控制閥 126、134 :傳動軸 128、140 :馬達 130、136 :溝槽 132 :法線 138 ·晶盒 實施例 第3圖係繪示依照本發明實施例之一種濕式洗淨裝置 之示意圖。 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 480613 A7 B7 5643twf.doc/006 五、發明説明（/) ------；—：—— (請先閲讀背面之注意事項再填寫本頁) 請參照第3圖，本發明之濕式洗淨裝置100包括一淸 洗內槽102、一淸洗外槽、一液體循環輸送裝置丨〇6、 一可轉動裝置108與一鈍氣輸送管線109。 上述之淸洗內槽102係用以裝盛待淸洗晶圓99之淸 .洗液。淸洗內槽102之一側壁110的高度低於其另一側壁 Π2，且此側壁11〇係與淸洗外槽104連接，以使淸洗內槽 102之中的淸洗液可溢流至此淸洗外槽1〇4之中。淸洗內 槽102與淸洗外槽104的材質以可耐酸鹼者，例如爲鐵氟 龍較佳。 液體循環輸送裝置106的一端114係與回流槽1〇4連 接；而另一端116則與淸洗內槽102連接。藉由此液體循 環輸送裝置106可以使溢流至淸洗外槽104之淸洗液再回 流至淸洗內槽102之中。 經濟部智慧財產局員工消費合作社印製 上述之液體循環輸送裝置106至少包括一幫浦118, 以連接淸洗外槽104與淸洗內槽102。此幫浦118係用以 提供淸洗液自淸洗外槽104回流至淸洗內槽102之動力。 較佳的液體循環輸送裝置106則會在幫浦118與淸洗內槽 102之間連接一過濾裝置120，以過濾溢流至淸洗外槽104 之淸洗液其中的污染物。爲了控制淸洗液之流量，上述之 液體循環輸送裝置106更包括控制閥122與控制閥124， 其中控制閥122連接淸洗外槽104與幫浦118，係用以控 制自淸洗外槽104流出之淸洗液的流量。控制閥124則連 接過濾裝置120和淸洗內槽102,係用以控制自.過濾裝置 120流出之淸洗液的流量。 8 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 480613 5643twf.doc/006 A7 B7 五 __ 經濟部智慧財產局員工消費合作社印製 發明説明（7) 可轉動裝置108，係配置於淸洗內槽102之中，用以 承載待淸洗之晶圓99，並使晶圓99可以轉動，可轉動裝 置108之示意圖如第4圖與第5圖所示者。 請參照第4圖，本發明之可轉動裝置1〇8至少包括傳 動軸126與馬達128,其中馬達128係與傳動軸126連接， 用以使傳動軸126轉動，而傳動軸126則與淸洗內槽1〇2 連接，且其具有數個溝槽130，用以固定晶圓99之用，並 且可以使得晶圓99可以以其法線132爲旋轉軸轉動。傳 動軸126之數目例如是〜支、二支、三支、或可以依照實 際的需要而決定，但以能達到固定晶圓99，使晶圓99在 轉動的過程中不會掉落爲原則。 請參照第5圖，本發明之另一種可轉動裝置1〇8包括 傳動軸134與馬達140，其中馬達140與傳動軸134連接， 係用以使傳動軸134轉動之用；傳動軸134則與淸洗內槽 102連接，係用以固定放置有複數個晶圓99之晶盒138， 而且傳動軸134具有數個溝槽136，使晶盒138之中的晶 圓99可以以其法線132爲旋轉軸轉動。傳動軸134之數目 例如是一支、二支、三支、或可以依照實際的需要而決定， 但以能達到旋轉晶圓99，並使晶盒138在轉動的過程中不 會掉落爲原則。 請參照第3圖，鈍氣輸送管線109係配置於淸洗內槽 102之底部，其具有多個孔洞，可用以將鈍氣輸送至淸洗 內槽102中。藉由鈍氣的輸入，可以在淸洗液之中產生氣 泡，使淸洗液發生擾流，以增加其混合的均勻性，減少習 9 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 480613 5643twf.doc/006 A7 B7 五、發明説明（公） 知因爲淸洗液黏度過大、難以流動所造成的飽刻不均現 象。 (請先閲讀背面之注意事項再填寫本頁} 由於本發明在淸洗內槽之中配置可使晶圓轉動的可轉 動裝置，因此，晶圓在洗淨的過程中係屬於動態而非靜態， .故而可以彌補淸洗液黏度過大，難以流動，對於蝕刻均勻 .度所造成之問題。 訂 經濟部智慧財產局員工消費合作社印製 當本發明濕式洗淨裝置應用於洗淨控、檔片之複晶矽 層之時，由於晶圓在洗淨的過程中可以藉由可轉動裝置而 使其轉轉動，因此，即使是使用具有高黏度之硝酸等化學 品當作淸洗液，亦可以使晶圓上之複晶砍層不斷均勻地接 觸淸洗液中具有足夠氧化力之硝酸溶液，而使其均勻且快 速地被蝕刻去除。換言之，當晶圓下端接觸淸洗液之後， 一但淸洗液中具有氧化力的硝酸溶液因爲蝕刻複晶砂層而 耗盡其氧化力時，晶圓上端將無法進行氧化蝕刻’但藉由 可轉動裝置的轉動，可以使晶圓上端在短時間之內立刻接 觸到下端淸洗液中具有足夠氧化力的新鮮硝酸溶液，而使 複晶矽層均勻被蝕刻，此機制重複數次之後，在極短的時 間之內則可以將複晶矽層完全去除，而且其蝕刻的均勻度 非常好。除此之外，透過鈍氣管線將鈍氣輸入於淸洗液之 中，可以藉由氣泡的產生，而使淸洗液發生擾流’以增加 其混合的均勻性，減少習知因爲淸洗液黏度過大、難以流 動所造成的蝕刻不均現象。 綜合以上所述，本發明在濕式洗淨裝置中增加可轉動 晶圓之裝置以及可以供應鈍氣至淸洗液之中使淸洗液增加 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 480613 5643twf.doc/006 A7 五、發明説明（？） 擾動的鈍氣輸送管至少具有下列優點： 1. 本發明之濕式洗淨裝置可用以改善濕式淸洗複晶 矽層的蝕刻均勻度。 2. 本發明之濕式洗淨裝置，可以避免複晶矽層所覆 蓋之氧化層在複晶矽層洗淨的過程中不當地被蝕刻，而造 .成其厚度損失或不均的現象，因此本發明可以增加複晶矽 控、檔片之回收次數，以減少晶圓的使用量，降低製造成 本。 3. 本發明之濕式洗淨裝置，可以使淸洗液中具有足 夠氧化力之硝酸迅速地供應至晶圓上，以發揮其最大之洗 淨功效，因此本發明可以減少化學品的使用量。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍內，當可作各種之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者爲準。 (讀先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）480613 5643 twf.doc / 006 B7 V. Description of the Invention (/) The present invention relates to a wafer cleaning device, and more particularly to a wet cleaning device. '' In the Ultra Large Scale Integrated Circuit (ULSI) process, wafer washing technology and cleanliness are important factors that affect the fab process yield, component quality and reliability. Especially when the process technology evolves into the sub-micron field, the manufacturing process exceeds hundreds of steps, and the requirements for wafer cleaning become more stringent to meet the requirements of ultra-cleanliness. The purpose of cleaning is to remove contaimnation on the wafer surface, such as impurities (partlcle), organic matter and inorganic metal ions. For the control wafers and spacers used in the manufacturing process, based on cost considerations, in addition to removing the dirt on the wafer surface, the complex crystal sand layer formed on the wafer must be removed in order to The wafer with the oxide layer can be recycled and reused to achieve the purpose of saving costs. Please refer to FIG. 1. The conventional method for removing the polycrystalline silicon layer on the control and baffle is to place the wafer 10 vertically in a cleaning tank 52 of a wet cleaning system 50 for cleaning. A step of. The washing tank 52 contains 1 ·· 10 of hydrofluoric acid and nitric acid as a cleaning solution. During the washing step, the washing solution can overflow into the recovery tank 54 and then pass through the liquid conveying device 56 to return it from the bottom of the decanting tank 52 to the decanting tank 52. FIG. 2A to FIG. 2C are schematic diagrams showing the control and the shutter 10 at three time points of 10 seconds, 20 seconds, and 30 seconds that are conventionally performed in the washing step. Please make a picture according to Figure 2A, and have formed the control sheet or baffle sheet 10 with a thickness of 1500 Angstroms of the polycrystalline silicon layer 14 and an oxide layer 12 of 1000 Angstroms. 3 This paper is in accordance with the Chinese National Standard (CNS ) A4 specification (210X297 mm) (Please read the precautions on the back before filling out this page), v " Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 480613 5643twf.doc / 006 A7 ______B7_____ V. Description of the invention (>) Put it vertically in a wet cleaning system containing a 1:10 hydrofluoric acid and nitric acid mixed solution 50 'After 10 seconds, the nitric acid has a high oxidizing power, so' wafer 10 first contacts the mixed solution's In part, as shown in the area 16 in the figure, an oxidative etching reaction will occur quickly, and the polycrystalline silicon layer 14 will be removed to expose the oxide layer between the polycrystalline silicon layer 14 and the wafer 10. 12. Due to the short cleaning time, the thickness of the exposed oxide layer 12 is still maintained at 1000 angstroms, without any loss of thickness for the time being. When the washing step continues for 20 seconds, refer to Figure 2B. Nearly half of the polycrystalline silicon layer 14 in the wafer 10 is removed by etching, and the oxide layer 12 that has been exposed when the cleaning step is performed for 10 seconds, as shown by the area 16 in the figure , The thickness of the etching solution is reduced to about 900 angstroms due to the continuous erosion of the etching solution. Please refer to FIG. 2C. After the wafer 10 has been cleaned for 60 seconds, the polycrystalline silicon layer 14 on the wafer 10 can be completely removed. However, the thickness of the oxide layer 12 remaining on the wafer 10 is different because of the different exposure time to the etchant. For example, for the oxide layer 12 that is not exposed until the cleaning step is performed for 60 seconds, the thickness of the oxide layer 12 is still maintained at 1000 angstroms as shown in the area 18 in the figure. However, the cleaning step is performed for 10 seconds. The oxide layer 12 that has been exposed in seconds, as shown by the area 16 in the figure, has been reduced to 700 angstroms in thickness. The above experimental results show that the conventional method of fixing the control piece and the baffle to the cleaning tank for the cleaning step has a poor etching uniformity of the polycrystalline silicon layer, and the oxide layer will be damaged by the etching and have uneven thickness. The phenomenon. In order to make the control and stopper play their role, the thickness of the control layer is too large. The paper size is applicable to China National Standards (CNS) ~ A4 specifications (21 ^^ 97 male diamond) (Please read the precautions on the back first) (Fill in this page) .1¾. Order printed by 480613 5643twf.doc / 006 A7 B7 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (彡), the original oxide layer must be removed and another layer formed. Oxide layer. In this way, the number and quantity of control and file recovery can be greatly reduced, and the manufacturing cost is increased. Therefore, the object of the present invention is to provide a wet cleaning device, which can be used to improve the uniformity of wet-etching the polycrystalline silicon layer and avoid the phenomenon that the polycrystalline silicon is over-etched and the oxide layer below it is lost. Yet another object of the present invention is to provide a wet cleaning device, which can increase the number of times that the polycrystalline silicon controller and the baffle are recovered to reduce the amount of wafer used. According to the above object of the present invention, a wet cleaning device is provided. The device includes an inner washing tank, an outer washing tank, a liquid circulation conveying device, and a rotatable device. The cleaning inner tank is used for holding the cleaning liquid for cleaning the wafer. The cleaning liquid in the cleaning inner tank can overflow to the cleaning outer tank, and then return to the cleaning by the liquid circulation conveying device. In the inner slot. The rotatable device is arranged in the cleaning inner tank to carry the wafer to be cleaned, and the crystal circle can be rotated with its normal line as the rotation axis. This wet cleaning device can reduce the difference in wafer etching uniformity by the rotation of the wafer. According to the embodiment of the present invention, the above rotatable device includes at least a transmission shaft and a motor, wherein the motor is used to rotate the transmission shaft, and the transmission shaft has a plurality of grooves for fixing the wafer. And the wafer can be rotated with its normal line as the rotation axis. According to the embodiment of the present invention, the rotatable device includes a transmission shaft and a motor, wherein the motor is used for rotating the transmission shaft; the transmission shaft is used for fixing a crystal box with a plurality of wafers, and The wafer is rotated with its normal line as the rotation axis. 5 This paper size is applicable to China National Standards (CNS) A4 (2 × 〇297mm) nn lb- IIIII ϋ I (Please read the precautions on the back before filling this page) Order-line · Ministry of Economic Affairs Intellectual Property Printed by the Bureau ’s Consumer Cooperatives 480613 A7 B7 5643tv / f.doc / 006 V. Description of the Invention (+) ---------, ---- Clothes ~. I (Please read the notes on the back before filling in this In addition, according to the embodiment of the present invention, the above-mentioned wet cleaning device further includes a blunt gas delivery line. The inert gas delivery line is arranged at the bottom of the scrubbing inner tank, and has a plurality of holes, which can be used to transport the inert gas into the scrubbing inner tank. With the input of inert gas, bubbles can be generated in the cleaning solution, and the cleaning solution is disturbed to increase the uniformity of its mixing and reduce the etching caused by the excessive viscosity of the cleaning solution, which is difficult to flow. Unevenness. Because the present invention is provided with a rotatable device in the inner tank for rotating the wafer, the wafer is dynamic rather than static during the cleaning process, so it can compensate for the excessive viscosity of the cleaning liquid, which is difficult to flow. For the problems caused by etching uniformity. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the following describes the preferred embodiments in detail with the accompanying drawings as follows: Brief description of the drawings: FIG. 1 is FIG. 2A to FIG. 2C are schematic diagrams showing three time points of 10 seconds, 20 seconds, and 30 seconds for the washing step of the conventional control panel 10; and FIG. 3 Figure 4 is a schematic diagram of a wet cleaning device printed by a consumer cooperative of employees of the Intellectual Property Bureau of the Ministry of Economic Affairs; Figure 4 is a schematic diagram of a rotatable device according to an embodiment of the invention; and 5 is a schematic diagram showing another rotatable device according to an embodiment of the present invention. The pictogram indicates that this paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇 > < 297 mm) 480613 Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 5743twf.doc / 006 A 7 B7 V. Description of the invention (Sunburn) 10, 99: Wafer 12: Oxidation layer 14; Polycrystalline silicon layer 16, 18: Area 5 0: Wet cleaning system 52, 102: Rinse inner tank 54, 104: Rinse outer tank 56, 106: liquid circulation conveying device 100: wet cleaning device 108: rotatable device 109: inert gas conveying line 110, 112: side wall 114, 116: end point 118: pump 120: filtering device 122, 124: control Valves 126, 134: Transmission shafts 128, 140: Motors 130, 136: Grooves 132: Normals 138. [Crystal box embodiment] FIG. 3 is a schematic diagram showing a wet cleaning device according to an embodiment of the present invention. (Please read the precautions on the back before filling this page) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 480613 A7 B7 5643twf.doc / 006 5. Description of the invention (/) ----- -; —: —— (Please read the precautions on the back before filling out this page) Please refer to Figure 3, the wet cleaning device 100 of the present invention includes a washing inner tank 102, a washing outer tank, and a liquid. Circulation conveying device, a rotatable device 108 and a blunt gas conveying line 109. The above-mentioned washing inner tank 102 is used to hold a washing liquid for the wafer 99 to be washed. The height of one side wall 110 of the inner tank 102 is lower than the other side Π2, and the side wall 110 is connected to the outer tank 104, so that the washing liquid in the inner tank 102 can overflow there. Wash in the outer tank 104. The material of the washing inner tank 102 and the washing outer tank 104 is resistant to acids and alkalis, such as Teflon. One end 114 of the liquid circulation conveying device 106 is connected to the reflux tank 104; and the other end 116 is connected to the washing inner tank 102. By this liquid circulation conveying device 106, the washing liquid overflowing to the washing outer tank 104 can be returned to the washing inner tank 102 again. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The above-mentioned liquid circulation conveying device 106 includes at least one pump 118 to connect the outer washing tank 104 and the inner washing tank 102. This pump 118 is used to provide the power for backwashing the washing liquid from the outer washing tank 104 to the inner washing tank 102. The preferred liquid circulation and conveying device 106 is connected with a filtering device 120 between the pump 118 and the washing inner tank 102 to filter the pollutants in the washing liquid overflowing to the washing outer tank 104. In order to control the flow of the washing liquid, the above-mentioned liquid circulation conveying device 106 further includes a control valve 122 and a control valve 124. The control valve 122 is connected to the washing external tank 104 and the pump 118, and is used to control the self-washing external tank 104 The flow rate of the outflowing lotion. The control valve 124 is connected to the filtering device 120 and the washing inner tank 102, and is used to control the flow rate of the washing liquid flowing from the filtering device 120. 8 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 480613 5643twf.doc / 006 A7 B7 Five __ Printed description of the invention by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (7) Rotatable device 108, It is arranged in the cleaning inner tank 102 to carry the wafer 99 to be cleaned and to allow the wafer 99 to rotate. The schematic diagram of the rotatable device 108 is shown in FIGS. 4 and 5. Referring to FIG. 4, the rotatable device 108 of the present invention includes at least a transmission shaft 126 and a motor 128, wherein the motor 128 is connected to the transmission shaft 126 for rotating the transmission shaft 126, and the transmission shaft 126 is connected to the washing The inner groove 102 is connected, and has a plurality of grooves 130 for fixing the wafer 99, and the wafer 99 can be rotated with its normal line 132 as a rotation axis. The number of the transmission shafts 126 is, for example, ~, 2, or 3, or it can be determined according to actual needs, but it is based on the principle that the fixed wafer 99 can be achieved so that the wafer 99 does not fall during the rotation. Referring to FIG. 5, another rotatable device 108 of the present invention includes a driving shaft 134 and a motor 140, wherein the motor 140 is connected to the driving shaft 134 for rotating the driving shaft 134; the driving shaft 134 is connected with The inner tank 102 is connected for cleaning, and is used for fixing the crystal box 138 on which a plurality of wafers 99 are placed, and the transmission shaft 134 has a plurality of grooves 136, so that the wafer 99 in the crystal box 138 can be aligned with its normal line 132. Rotate for the rotation axis. The number of transmission shafts 134 is, for example, one, two, three, or it can be determined according to actual needs, but it is based on the principle that it can reach the rotating wafer 99 and prevent the crystal box 138 from falling during the rotation. . Referring to FIG. 3, the inert gas conveying line 109 is disposed at the bottom of the washing inner tank 102, and has a plurality of holes, which can be used to convey the inert gas into the washing inner tank 102. With the input of inert gas, air bubbles can be generated in the lotion solution, so that the lotion solution can be disturbed to increase the uniformity of its mixing and reduce the habit. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297). (Mm) (Please read the precautions on the back before filling in this page) 480613 5643twf.doc / 006 A7 B7 V. Description of the Invention (mm) I know the unevenness of fullness caused by the high viscosity of the lotion and the difficulty of flowing. (Please read the precautions on the back before filling this page} Because the present invention is equipped with a rotatable device that can rotate the wafer in the cleaning inner tank, the wafer is dynamic rather than static during the cleaning process Therefore, it can make up for the problem that the viscosity of the cleaning solution is too large, it is difficult to flow, and the problem caused by the uniform etching. Order the printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs when the wet cleaning device of the present invention is applied to the cleaning control, file When the polycrystalline silicon layer of the wafer is used, the wafer can be rotated by a rotatable device during the cleaning process. Therefore, even if chemicals such as nitric acid with a high viscosity are used as the cleaning solution, The polycrystalline cutting layer on the wafer can be continuously and uniformly contacted with the nitric acid solution with sufficient oxidizing power in the cleaning solution, so that it can be uniformly and quickly removed by etching. In other words, when the lower end of the wafer contacts the cleaning solution, a However, when the nitric acid solution with oxidizing power in the cleaning solution has depleted its oxidizing power due to etching the polycrystalline sand layer, the upper end of the wafer cannot be oxidized and etched. However, by rotating the rotatable device, the crystal can be made The upper end of the circle immediately contacts the fresh nitric acid solution with sufficient oxidizing power in the lower cleaning solution within a short time, so that the polycrystalline silicon layer is uniformly etched. After repeating this mechanism several times, it can be done in a very short time. The polycrystalline silicon layer is completely removed, and the uniformity of the etching is very good. In addition, the inert gas is input into the cleaning solution through a passive gas pipeline, and the cleaning solution can be generated by the generation of air bubbles. "Spoiler" to increase the mixing uniformity and reduce the phenomenon of uneven etching caused by the viscous cleaning solution that is too large and difficult to flow. In summary, the present invention adds a rotatable wafer to the wet cleaning device. Device and can supply inert gas to the cleaning solution to increase the cleaning solution. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 480613 5643twf.doc / 006 A7 5. Explanation of the invention (?) Disturbance The passive gas conveying pipe has at least the following advantages: 1. The wet cleaning device of the present invention can be used to improve the etching uniformity of the wet scrubbing polycrystalline silicon layer. 2. The wet cleaning device of the present invention can avoid The oxide layer covered by the polycrystalline silicon layer is etched improperly during the cleaning process of the polycrystalline silicon layer, resulting in a loss or unevenness in its thickness. Therefore, the present invention can increase the polycrystalline silicon control and baffle. Recycling times to reduce the amount of wafers used and reduce manufacturing costs. 3. The wet cleaning device of the present invention can quickly supply nitric acid with sufficient oxidizing power in the cleaning solution to the wafers to maximize their performance. The cleaning effect, so the present invention can reduce the amount of chemicals used. Although the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the present invention, anyone skilled in this art will not depart from the spirit of the present invention. Within the scope and scope, various modifications and retouching can be made, so the scope of protection of the present invention shall be determined by the scope of the attached patent application. (Read the precautions on the back before completing this page) Intellectual Property of the Ministry of Economic Affairs The paper size printed by the Bureau ’s Consumer Cooperative is applicable to the Chinese National Standard (CNS) A4 (210X297 mm)