TW475220B - Textured bi-based oxide ceramic films - Google Patents

Textured bi-based oxide ceramic films Download PDF

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Publication number
TW475220B
TW475220B TW088120430A TW88120430A TW475220B TW 475220 B TW475220 B TW 475220B TW 088120430 A TW088120430 A TW 088120430A TW 88120430 A TW88120430 A TW 88120430A TW 475220 B TW475220 B TW 475220B
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TW
Taiwan
Prior art keywords
bismuth
composition
ferroelectric
ratio
metal oxide
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TW088120430A
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Chinese (zh)
Inventor
Debra A Desrochers
Bryan C Hendrix
Jeffrey F Roeder
Frank S Hintermaier
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Infineon Technologies Ag
Advanced Tech Materials
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Priority claimed from US09/197,984 external-priority patent/US6713797B1/en
Application filed by Infineon Technologies Ag, Advanced Tech Materials filed Critical Infineon Technologies Ag
Application granted granted Critical
Publication of TW475220B publication Critical patent/TW475220B/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Abstract

A non-volatile memory cell wherein the capacitor comprises a Bi-based metal oxide having a crystallographic texture to produce high switchable polarization.

Description

475220 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（1 ) 祖盟且·藍i 本案為於1998年6月30日在美國申請專利之USSN 09/ 1 0 7，8 6 1案之延續部份。 !11.贐——範—— 本發明概括關於用於積體電路（I C )之鉍基金屬氧化物 陶瓷膜。更特定而言，本發明是關於具有高度可切換電 極化性之具紋理之鉍基金鼷氯化物陶瓷膜。 發lli— 金屬氯化物薄膜在積體電路（震C )中之用途已被探究。 尤其是含有緦、鉍和钽之如SrBi2Ta2〇9 (SBT)者之薄 膜，已因其優異之鐵電性質而吸引相當之注意。SB T之 鐵電性質使其在非揮發性鐵電隨機存取記億1C中成為記 億電容器之材料。各種技術，諸如溶顧-凝膠，化學蒸 鍍（C V D )，濺鍍，脈沖雷射澱積（P L D),和蒸發法等，均 已被發展用於在基質上澱積此等薄膜。 在鐵電材料之中，疲勞造成極化（2 P r )降低。極化降 低在記億IC中因造成可靠度的問題而不宜。例如，極化 降低可以造成由儲存電荷所送出之訊號太小而不能明確 界定邏輯上之” 0 ”或” 1 ”。對於極化疲勞之補償，需要用 具有高度可切換性之極化鐵電材料，增加記億元件的可 靠度。 其他因素也對提供具有高度2Pr之鐵電材料有所貢獻。 例如，裝置中有較高的集積密度，造成比較小的電容器 ,使具有較高的2 P r值而在較小的電容器上儲存相同的 -3 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） •ϋ I ί I ϋ I ϋ an ·ϋ I ϋ ϋ ϋ ϋ ϋ n 一 0、* υ ϋ I ϋ ϋ ϋ I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 475220 A7 B7_ 五、發明說明（2) 電荷。而且，由於後處理使材料降解也可能降低材料的 2 P r 值。 由以上所討論，有待産製具有高度可切換性之極化 的鉍基金屬氧化物。 發明槪沭 本發明關傺鉍基金屬氧化物陶瓷層。根據本發明，鉍 基金屬氧化物陶瓷層包括具有正確的定向之結晶學上的 紋理，因而得以增進電極化之可切換性。 在一具體例中，鉍基金屬氧化物陶瓷是以Y a B i b X 2 〇 表示，其中Y包括一種2價陽離子，而X包括5價陽離子。 在一具體例中，Υ等於一或多種選自S r、 B a、P b和C a的 元素。X，在一具體例中，等於一或多種選自T a和N b的 元素。各項技術，諸如溶膠-凝膠，化學蒸鍍（C V D )，濺 鍍，脈冲雷射澱積（P L D )，和蒸發法等，均可被用以形 成B i基金屬氧化物。在一具體例中，鉍基金屬氧化物是 用C V D法作非晶性澱積。非晶C V D材料在澱積後被加工使 轉變成為具有優良電性的材料。 適當控制鉍基氧化物之組成可以得到有高度紋理的材 料。在一具體例中，鉍基氧化物之組成受到控制而形成 具有定向結晶紋理之材料，其中之定向像在垂直於導電 層之極化方向産生平均分量上之提昇。 在本發明之一具體例中，鉍基金屬氧化物之組成含有 約為0.5-0.9之Y/2X比率，較佳約為0.6-0.8，且更佳 為0·7_0·8。Bi/2X之比率，在一具體例中，約為2.0-2.6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝---------訂---------綠 475220 A7 B7 五、發明說明（ 2 明 為説 約單 佳簡 較式 ， 圖 為 佳 更 且 -二 件種 元 一 億之 記層 鐵鐵 之有 中含 例中 體例 具體 一 具 之一 發發 本本 據據 根根 示 示 表表 圖圖 1 ηΛ 第第 構 結 型 礦 鈦 鈣 化 .層 之 ο Τ 體 S 晶性 電電 效鐵 場示 物表 化圖 氧 3 屬第 金 數 函 之 物 成 組 為 作 理 紋 之 物 化 氧 基 鉍 示 表 圖 6 I 4 第 化 極 換 切 可明 示説 表細 7 詳 第明 發 俗 關 之 間 之 成 組 與 用以 之 ， 中瓷 c J I 陶 在物 其化 及氣 膜屬 薄金 瓷基 陶鉍 物傺 化關 氧明 屬發 金本 基 ， 鉍 ^一一 口 傺而 關定 明特 發更 本 〇 途 澱 膜 薄 物 化 氧 屬 金 基 鉍膠 種 溶 〇 一 如 理，諸 紋例 ， 晶體術 結具技 之一種 含之各 所明 C 制發上 控本質 成據基 組根於 其 積 鍍 蒸 學 化 膠 凝 (請先閱讀背面之注意事項再填寫本頁) ),者 LD佳 (Ρ較 積 。 澱膜 射薄 雷物 沖化 脈氧 ， 屬 鍍金 濺基 ，鉍 用 被 可 均 發 蒸 澱 用 是 物 化 氧 屬 金 基 Μ 變 轉 物 化 氧 基 鉍 C 使 用 ， 是火 物退 化如 氧理 屬處 金熱 基的 .篇後 '，"積 者澱 佳取 更採 ο ί 積常 殿通 積 澱 性 晶 非 作 經濟部智慧財產局員工消費合作社印製 基 鉍 之 mi 1 理 紋 度 高 有 生 産 mit 理 處 熱 之 後 積 澱 ο 料 。 材瓷 電陶 鐵物 為化 成氯 記於 電用 鐵應 括 一 概 明是 說明 字發 文本 以 ， 明而 發然 本 〇 ， 體 的晶 目電 之電 例鐵 舉種 示 一 圖和 於件 對元 億 其鐵 ο ο 瓷用 陶利 物可 化亦 氧體 屬晶 金電 基之 鉍層 之物 用 合 作化 化屬 電金 之基 換鉍 切有 可含 度如 高途 有用 具他 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 475220 經濟部智慧財產局員工消費合作社印制衣 Α7 Β7 五、發明說明（4 ) 電電晶體已說明於例如'Uller 和McWhorter在J.AppI. Physics 73(12), P5999-6010 ( 1992)”鐵電性非揮發記憶 場效電晶體之物理”文中；和審理中之美國專利申請案 USSN ^0 9/ 107, 861,名稱為”非晶澱積之金屬氧化物陶 瓷薄膜”，均列此以供所有各項目的之參考。 參考第1圖，所示為根據本發明一具體例之鐵電記億 元件100之示意圖。如所表示，記億元件含有一電晶體110 和一鐵電電容器150。電晶體之第一電極111被連結至位 線125(Bit line)，而第二電極112被連結至電容器。電 晶體之一閘極被連結至字線1 2 6。1 鐵電電容器含有由鉍基鐵電層所分隔之第一片和第二 Η如153和157。第一片153連結至電晶體的第二電極。 通常第二片在記億陣列中作為公共片。 根據本發明，鉍基鐵電層含有由其組成所控制之紋理 。在鉍基金屬氣化物鐵電層中備有正確的結晶紋理，構 成高度可切換的極化作用。 通常以多値記億元件用字線和位線互相連接而形成在 記億IC中之陣列，。對記億元件的存取作用是對字線和位 線提供適當電壓，使數據從電容器被寫出或讀出而達成。 參考第2圖，表示根據本發明一具體例之鐵電記億元 件100例示之剖面。記億元件含有在如半導體晶圓之基 板101上所形成之電晶體110。電晶體含有由通路113所 分隔之擴散區111和112,在其上有一閘極114。一種閛 氣化物（未示）分隔閘極與通路。各擴散區域含有ρ型或 -6 一 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------ --------訂---------綠' (請先閱讀背面之注意事項再填寫本頁) 475220 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（5 ) η型摻雜物。摻雜物之類型是隨所需電晶體類型而選定 例如，諸如砷（A s )或磷（Ρ )之η型摻雜物被用於η -通 路裝置，而如硼（Β)之ρ型摻雜物被用於Ρ -通路裝置。 隨箸在各擴散區之間電流之方向，一區被視為「汲極」 而另一區被認為是「源極」。「汲極」和「源極」之名 詞在此對於各擴散區域是可互換而使用的。通常，電流 從源極流向汲極。閘極代表一字線，而各擴散區1 1 1之 一被一接觸插頭（未示）聯結至位線。 電容器150經由接觸插頭140聯結至擴散區112。電容 器含有由鐵電層155所分隔之底和頂兩電極153和157。 設有高度紋理之鐵電層。結晶紋理是由鐵電層之組成所 控制。各電極通常是用貴金屬如鉑（Pt)者所形成。導電 阻隔層1 5 1可以設於底電極和接觸插頭之間。阻隔層抑 止氯擴散進入接觸插頭140。阻隔層也抑止1)各種原子 從插頭擴散進入鐵電層，和2)各種原子從底電極或鐵電 層潛移進入插頭中。 設置層間介電（ILD)層160以隔離記億元件之各値零件 。ILD層由例如矽酸鹽玻璃構成，其如二氧化矽（Si02) 或氮化矽（Si3N4)。經過摻雜之矽酸鹽玻璃如硼磷矽 酸鹽玻璃（PSG)、硼矽酸鹽玻璃（BSG)、或磷矽酸鹽玻璃 (P S G )均可使用。 記億元件100之形成，其加工程序包括在基板上形成 電晶體110。基板例如是一個含有矽的半導體晶圓。基 板之其他各種形式如鍺（Ge)、砷化鎵（GaAs),或其他半 一 7 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) · «ϋ ϋ I ϋ ϋ I ϋ· 一口、I ϋ ·ϋ I ϋ I ·ϋ I I » 475220 A7 B7_ 五、發明說明（6 ) (請先閱讀背面之注意事項再填寫本頁) 導體化合物也可被採用。通常，基板用P -型摻雜物如B 者作輕度摻雜，更為加重之摻雜基板也可採用。具有輕 度摻雜之磊晶（e p i )層之重度摻雜基質如p - / p +基板 者也可採用。N -型摻雜基板，包括輕度摻雜、重度摻雜 ，或有輕度摻雜之磊晶層之重度摻雜基板，也均可被採 用。 如有需要，含摻雜物之摻雜井可以設置以防穿通。摻 雜井是在基質中形成電晶體之區域以選擇性植入摻雜物 而形成。光阻罩層可以用於選擇性植入摻雜物。在一具. 體例中，摻雜并是用如B之P -型摻雜物植入於基質而形 成。P -型摻雜井（P -井）用作η -通路裝置的摻雜井。含有 例如A s或Ρ摻雜物之η -型摻雜井（η -井）也可用於ρ -通路 裝置。 經濟部智慧財產局員工消費合作社印製 擴散區域1 1 1和1 1 2是以選擇性植入具有第二種電符號 之摻雜物，進入基板所需之部位而形成。在一具體例中 ，η -型摻雜物被植入於ρ -型井中而用於η -通路裝置，而 Ρ -型摻雜物用於Ρ -通路裝置。植入也可以進行於植入摻 雜物進入於各擴散區域之間的通路區域，調整電晶體之 閘極的臨界電極（V τ )。在閘極形成後形成擴散區域也 是可行。 不同的各層可以澱積於基板上並成圖形以形成閘極。 閘極包含例如閘極氧化物和多晶矽之（多元）層。此（多 元）例如是被摻雜者。在某些情形中，金屬矽化物層 被形成於摻雜之多元層上，産生一種多晶矽-矽化物 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 475220 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（7 ) (Ρ ο 1 y c i d e )層以減低層片電阻。各種金屬矽化物，包括 矽化鉬（Μ o S i X )、鉅（T a S i X )、鎮（W S i X )、鈦（Ti S i X ) 或矽化鈷（C o S i χ ),均可使用。鋁或耐火金屬如鎢和鋁 者可垃單獨與各種矽化物或多元物合併而使用。 接觸插頭和位線可在用各種技術如單或雙鑲嵌技術之 已知技術，在完成電晶體後之後序以形成。反應離子蝕 刻（R I E )技術亦可使用。雙鑲嵌和蝕刻等技術也可以合 併使用。接觸插頭含有導電性材料，例如經摻雜之多元 物或鎢（W),:,其他導電性材料也可使用。位線含有例如 鋁（A1)或其他導電性材料。一 ILD1層160隔離記億元件中 各値零件。 為求防止或減少在接觸插頭1 4 0和隨後形成之鐵電層 之間有原子潛移，一導電阻隔層151加於ILD層上。阻隔 層含有例如氮化鈦（T i N )者。其他材料如I r S i χ 0 y、475220 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention (1) Zu Meng and Lan i This case is USSN 09/1 0 7, 8 6 1 which applied for a patent in the United States on June 30, 1998 Continuation of the case. ! 11. 赆 —— 范 —— This invention summarizes the bismuth-based metal oxide ceramic film for integrated circuit (IC). More specifically, the present invention relates to a textured bismuth-based hafnium chloride ceramic film having highly switchable electropolarity. Hair lli—The use of metal chloride films in integrated circuits (vibration C) has been explored. In particular, films such as SrBi2Ta20 (SBT) containing rhenium, bismuth, and tantalum have attracted considerable attention due to their excellent ferroelectric properties. The ferroelectric properties of SB T make it the material of 100 million capacitors in non-volatile ferroelectric random access memory 100C. Various techniques, such as solvent-gel, chemical vapor deposition (CVD), sputtering, pulsed laser deposition (PLD), and evaporation methods, have been developed for depositing such films on substrates. In ferroelectric materials, fatigue causes a reduction in polarization (2 Pr). The reduction of polarization is not suitable for the reliability problem in the IC. For example, a reduction in polarization can cause the signal sent by the stored charge to be too small to clearly define a logical "0" or "1". For the compensation of polarization fatigue, it is necessary to use polarizable ferroelectric materials with high switchability to increase the reliability of billion-dollar components. Other factors also contribute to the provision of ferroelectric materials with a high 2Pr. For example, the device has a higher accumulation density, which results in a smaller capacitor, which has a higher value of 2 Pr and stores the same -3 on a smaller capacitor.-This paper size applies to China National Standard (CNS) A4 Specifications (210 X 297 mm) • ϋ I ί I ϋ I ϋ an · ϋ I ϋ ϋ ϋ ϋ 一 n one 0, * υ ϋ I ϋ ϋ ϋ I (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 475220 A7 B7_ V. Description of the invention (2) Electric charge. Moreover, degradation of the material due to post-treatment may also reduce the 2P r value of the material. From what has been discussed above, a highly switchable polarized bismuth-based metal oxide is to be produced. Invention: The present invention relates to a bismuth-based metal oxide ceramic layer. According to the present invention, the bismuth-based metal oxide ceramic layer includes a crystallographic texture with a correct orientation, thereby improving the switchability of electrodeposition. In a specific example, the bismuth-based metal oxide ceramic is represented by Ya Bi B X 2 0, where Y includes a divalent cation and X includes a pentavalent cation. In a specific example, Υ is equal to one or more elements selected from the group consisting of Sr, Ba, Pb, and Ca. X, in a specific example, is equal to one or more elements selected from Ta and Nb. Various techniques, such as sol-gel, chemical vapor deposition (C V D), sputtering, pulsed laser deposition (PL D), and evaporation methods, can be used to form Bi-based metal oxides. In a specific example, the bismuth-based metal oxide is amorphous deposited by the CVD method. Amorphous C V D materials are processed after deposition to transform them into materials with excellent electrical properties. Proper control of the composition of the bismuth-based oxide can result in highly textured materials. In a specific example, the composition of the bismuth-based oxide is controlled to form a material with a directional crystalline texture, in which the directional image produces an increase in the average component perpendicular to the polarization direction of the conductive layer. In a specific example of the present invention, the composition of the bismuth-based metal oxide contains a Y / 2X ratio of about 0.5-0.9, preferably about 0.6-0.8, and more preferably 0 · 7_0 · 8. The ratio of Bi / 2X, in a specific example, is about 2.0-2.6. The paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page). --------- Order --------- Green 475220 A7 B7 5. Description of the invention One hundred million layers of iron and iron are contained in one of the specific examples of the system. The document is issued according to the root table. Figure 1 ηΛ The first structural ore calcification of titanium. The layer ο Τ bulk S crystalline electricity Figure 3 shows the effect of the iron field. Oxygen 3 The objects that belong to the golden number group are grouped as the physical texture of the bismuth oxybismuth. Figure 6 I 4 The first pole change can be clearly shown in Table 7 The group between the Guan and the use of it, the porcelain c JI pottery in the materialization and air film is a thin gold porcelain-based pottery and bismuth matter 傺 关 氧 明 属 is a gold base, bismuth ^ one 傺 傺 傺 定 一 特 特 special feature In addition, the thickness of the thin film of the oxidized gold-based bismuth gum solution is as reasonable as the various examples. A type of body-building technique that contains all the essential properties of the C-control system, which is based on the foundation of the product, which is based on its chemical vaporization gel (please read the precautions on the back before filling this page)), the LD is best ( P is relatively thin. The deposited film shoots a thin mine to oxidize pulsed oxygen, which is a gold-plated sputtering base. Bismuth is used for homogenous evaporation. It is a physical oxygenated gold base. Oxygen Physics belongs to the Golden Heat-Based. After the article ', "Jie Zhe Dian Jia Ji Gao Jing ο ί" Ji Chang Dian Tong Ji Jing Jing Fei Zuo Mi 1 printed on the base of Bismuth of the Intellectual Property Bureau of the Ministry of Economic Affairs's Consumer Cooperatives The material is deposited after the heat is high, and the material is deposited. The material of porcelain, porcelain, and ceramics is converted to chlorine. The iron used in electricity should be included in the text of the description. An example of the electricity is shown in the figure and the figure is about one hundred million yuan of iron. Ο Ceramics can be used for ceramics. The bismuth layer that is a crystal gold electric base can be converted into bismuth that is a gold base. Cutability The size of this paper is in accordance with the Chinese National Standard (CNS) A4 (210 X 297 mm) 475220 Printed clothing A7 B7 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (4) The transistor has been described in, for example, 'Uller And McWhorter in J. AppI. Physics 73 (12), P5999-6010 (1992) "Physics of Ferroelectric Non-volatile Memory Field-Effect Transistors"; and the pending US patent application USSN ^ 0 9/107, 861, named "amorphous deposited metal oxide ceramic film", is listed here for reference of all items. Referring to FIG. 1, there is shown a schematic diagram of a ferroelectric memory 100 element according to a specific example of the present invention. As shown, the billion-element includes a transistor 110 and a ferroelectric capacitor 150. The first electrode 111 of the transistor is connected to a bit line 125 (Bit line), and the second electrode 112 is connected to a capacitor. One of the gates of the transistor is connected to the word line 12.6. 1 The ferroelectric capacitor contains a first piece and a second piece such as 153 and 157 separated by a bismuth-based ferroelectric layer. The first sheet 153 is connected to the second electrode of the transistor. Usually the second slice is used as a common slice in the Billion Array. According to the invention, the bismuth-based ferroelectric layer contains a texture controlled by its composition. The bismuth-based metal vapor ferroelectric layer has the correct crystalline texture, which forms a highly switchable polarization. Arrays of CMOS ICs are usually formed by connecting word lines and bit lines to each other. The access to the memory device is achieved by providing appropriate voltages to the word and bit lines to enable data to be written to or read from the capacitor. Referring to Fig. 2, there is shown a cross-section of 100 examples of a 100 million yuan ferroelectric recording device according to a specific example of the present invention. The billion-dollar element contains a transistor 110 formed on a substrate 101 such as a semiconductor wafer. The transistor contains diffusion regions 111 and 112 separated by a via 113, and has a gate 114 thereon. A radon gas (not shown) separates the gate from the pathway. Each diffusion area contains ρ type or -6. This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm). ------------ -------- Order --------- Green '(Please read the notes on the back before filling out this page) 475220 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (5) n-type dopant. The type of dopant is selected according to the type of transistor required. For example, an n-type dopant such as arsenic (A s) or phosphorus (P) is used for the n-channel device, and a p-type such as boron (B). Dopants are used for P-channel devices. With the direction of the current flowing between the diffusion regions, one region is regarded as the "drain" and the other is regarded as the "source". The terms "drain" and "source" are used interchangeably for each diffusion region. Normally, current flows from the source to the drain. The gate represents a word line, and one of the diffusion regions 1 1 1 is connected to the bit line by a contact plug (not shown). The capacitor 150 is connected to the diffusion region 112 via a contact plug 140. The capacitor contains bottom and top electrodes 153 and 157 separated by a ferroelectric layer 155. Features a highly textured ferroelectric layer. The crystalline texture is controlled by the composition of the ferroelectric layer. Each electrode is usually formed of a precious metal such as platinum (Pt). A conductive barrier layer 151 may be provided between the bottom electrode and the contact plug. The barrier layer prevents chlorine from diffusing into the contact plug 140. The barrier layer also inhibits 1) various atoms from diffusing into the ferroelectric layer from the plug, and 2) various atoms sneaking into the plug from the bottom electrode or ferroelectric layer. An interlayer dielectric (ILD) layer 160 is provided to isolate the individual parts of the device. The ILD layer is composed of, for example, silicate glass, such as silicon dioxide (Si02) or silicon nitride (Si3N4). Doped silicate glass such as borophosphosilicate glass (PSG), borosilicate glass (BSG), or phosphosilicate glass (PSG) can be used. For the formation of the billion-element 100, the processing procedure includes forming a transistor 110 on a substrate. The substrate is, for example, a semiconductor wafer containing silicon. Various other forms of substrates such as germanium (Ge), gallium arsenide (GaAs), or other half-days 7-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the note on the back first Please fill in this page for the matters) · «ϋ ϋ I ϋ ϋ I ϋ · sip, I ϋ · ϋ I ϋ I · ϋ II» 475220 A7 B7_ V. Description of the invention (6) (Please read the notes on the back before filling in this (Page) Conductive compounds can also be used. Generally, the substrate is lightly doped with a P-type dopant such as B, and a more heavily doped substrate can also be used. A heavily doped substrate with a lightly doped epitaxial (e p i) layer such as a p-/ p + substrate can also be used. N-type doped substrates, including lightly doped, heavily doped, or heavily doped substrates with a lightly doped epitaxial layer, can also be used. If necessary, doping wells containing dopants can be set to prevent punch-through. A doped well is formed by forming a region of a transistor in the matrix to selectively implant a dopant. A photoresist layer can be used to selectively implant dopants. In one embodiment, the doping is performed by implanting a P-type dopant such as B into a substrate. A P-type doped well (P-well) is used as the doped well of the n-channel device. N-type doped wells (n-wells) containing, for example, As or P dopants can also be used for p-channel devices. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The diffusion areas 1 1 1 and 1 12 are formed by selectively implanting a dopant with a second electrical symbol into the required part of the substrate. In a specific example, an n-type dopant is implanted in a p-type well for an n-channel device, and a p-type dopant is used for a p-channel device. The implantation can also be performed in the area of the pathway where the implanted dopant enters between the diffusion regions, and the critical electrode (V τ) of the gate of the transistor is adjusted. It is also possible to form a diffusion region after the gate is formed. Different layers can be deposited on the substrate and patterned to form the gate. The gate includes (multiple) layers such as gate oxide and polycrystalline silicon. This (multivariate) is, for example, the dopant. In some cases, a metal silicide layer is formed on the doped multi-layer to produce a polycrystalline silicon-silicide. This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297 mm) 475220 Intellectual Property of the Ministry of Economic Affairs A7 B7 is printed by the Bureau ’s consumer cooperative. V. Invention Description (7) (P ο 1 ycide) layer to reduce sheet resistance. Various metal silicides, including molybdenum silicide (M o S i X), giant (T a S i X), town (WS i X), titanium (Ti S i X) or cobalt silicide (C o S i χ), Can be used. Aluminum or refractory metals such as tungsten and aluminum can be used alone in combination with various silicides or multi-components. The contact plugs and bit lines can be formed after the transistor is completed using known techniques such as single or dual damascene techniques. Reactive ion etching (R I E) technology can also be used. Techniques such as dual damascene and etching can also be used in combination. Contact plugs contain conductive materials, such as doped poly or tungsten (W),:, other conductive materials can also be used. The bit line contains, for example, aluminum (A1) or other conductive materials. An ILD1 layer 160 isolates each part in the hundreds of millions of components. In order to prevent or reduce atomic latent movement between the contact plug 140 and the ferroelectric layer formed later, a conductive resistance barrier layer 151 is added on the ILD layer. The barrier layer contains, for example, titanium nitride (T i N). Other materials such as I r S i χ 0 y,

Ce〇2 /TiSi2、或 TaSiNx 也可採用。 製程以形成鐵電電容器150而繼續。導電層153澱積於 阻隔層上。導電層1 5 3用作底電極。底電極含有導電材 料（，較佳者，導電材料與隨後被澱積之金屬氣化物陶瓷 膜不生反應者。在一具體例中，底電極含有一種貴金屬 如P t、P d、A u、 I r、或R h。其他材料如導電性金屬氧化 物、導電性金屬氮化物，或超導氣化物均可使用。較佳 者，導電性金屬氣化物、導電金屬氮化物、或超導氣化 物均為不與鐵電層反應者。導電性氧化物包括例如IrOx Λ R h 0 χ . Ru〇x、OsOx、ReO x 或 W0X (其中 x 為大 一 9 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） —1 ϋ —ϋ B^i ·ϋ ϋ ϋ ϋ 0 ί mi ι ϋ ammme ϋ* 一 口，Β ^^1 ϋ mmmam tamm mamme I I (請先閱讀背面之注意事項再填寫本頁) 475220 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（8 ) 於0而小於約為2 ) ^導電性金屬氮化物包括例如T i N X、 Z r N X (其X為大於〇而約小於1 , 1 ) , W N X、或T a N X (其 X大於0而約小於1 . 7 )。超導氣化物可以包括例如 Y B a ? C υ 2 〇7-χ 或 Bi2 S r 2 C a 2 C u 2 O10 〇 導電和阻隔之各層成為圖紋而形成底電極。 鉍基金靨氣化物層1 5 5禮形成於導電層1 5 3上。根據本 發明，所成之鉍基氯化物層含有結晶紋理，其又産生高 度可切換之極化作用。各種技術，其如溶膠-凝膠、化 學蒸鍍（C V D )、濺鍍、脈沖雷射澱積（P L D )、和蒸發'等方 法，均可用於形成鉍基金屬氧化物1。較佳者，鉍基金屬 氣化物是用C V D法形成。在一具體例中，鉍基氣化物是 用低溫C V D技術澱積而成。低溫技術記述於審理中之美 國專利申請案USSN 08/975, 087,名稱為”低溫CVD法 用/3-二酮酸鉍前置物供製備集積於鐵電記億裝置中所 用之鉍陶瓷薄膜”，其為在此例供所有目的之參考。用 C V D以非晶澱積之鉍基氣化物也可使用。C V D非晶澱積之 鉍基氣化物層記述於審理中之美國專利申請案USSN 09/ 1 07 , 8 6 1,名稱為”非晶澱積之金屬氧化物陶瓷薄膜”（ 律師檔案編號98 P 7422),列此併供各項目的參考。 在一具體例中，鉍基金屬氣化物層通用YaBibX2〇c 表示，其中Y包括2價陽離子而X包括5價陽離子。在 一具體例中，Y等於一或多種選自Sr、Ba、Pb、和Ca等 之元素。X,在一具體例中，等於一或多種選自Ta和Nb 之元素。註腳”a”指每2x原子所具之Y原子數目；註腳 一 10- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------ i----------訂 --------1- (請先閱讀背面之注意事項再填寫本頁) 475220 A7 B7 五、發明說明（9 ) ” b ”指每2 X原子所具之B i原子數目；而註腳” e ”指每2 X原 子所具之氯原子數目。 在一具體例中，鉍基氯化物陶瓷含有Sr。含有Sr和Ta 之鉍蠢氣化物也可用。較佳者，鉍基氣化物含有 S r a B ί b T a 2 0。。S B T之衍生物也為可用。S B T衍生物 ®^Sra Bib Ta2 Nbx 0c (0&lt;x 〈2), SraBibNb2〇c、Ce02 / TiSi2 or TaSiNx can also be used. The process continues to form a ferroelectric capacitor 150. A conductive layer 153 is deposited on the barrier layer. The conductive layer 1 5 3 functions as a bottom electrode. The bottom electrode contains a conductive material (preferably, the conductive material does not react with the subsequently deposited metal vapor ceramic film. In a specific example, the bottom electrode contains a noble metal such as P t, P d, Au, I r, or Rh. Other materials such as conductive metal oxide, conductive metal nitride, or superconducting gas can be used. Preferably, conductive metal gas, conductive metal nitride, or superconducting gas Chemical compounds are those that do not react with the ferroelectric layer. Conductive oxides include, for example, IrOx Λ R h 0 χ. Ru〇x, OsOx, ReO x, or W0X (where x is a freshman 9-this paper size applies to Chinese national standards ( CNS) A4 specification (210 χ 297 mm) —1 ϋ —ϋ B ^ i · ϋ ϋ ϋ ϋ 0 ί mi ι ϋ ammme ϋ * sip, B ^^ 1 ϋ mmmam tamm mamme II (Please read the note on the back first Please fill in this page for further information) 475220 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (8) 0 to less than about 2) ^ Conductive metal nitrides include, for example, T i NX, Z r NX ( Where X is greater than 0 and less than approximately 1, 1), WNX, or T a NX (where X is greater than 0) Less than about 1.7). The superconducting gaseous material may include, for example, YB a? C υ 2 〇7-χ or Bi2 S r 2 C a 2 Cu 2 O10 〇 Conductive and barrier layers are patterned to form the bottom electrode. The bismuth fund tritium gaseous layer 155 is formed on the conductive layer 153. According to the present invention, the formed bismuth-based chloride layer contains a crystalline texture, which in turn produces highly switchable polarization. Various technologies, which Methods such as sol-gel, chemical evaporation (CVD), sputtering, pulsed laser deposition (PLD), and evaporation can be used to form bismuth-based metal oxides 1. Preferably, bismuth-based metal gases The compounds are formed by the CVD method. In one specific example, the bismuth-based gaseous deposits are deposited by the low-temperature CVD technology. The low-temperature technology is described in the pending US patent application USSN 08/975, 087, entitled "Low-temperature CVD" The method uses a bismuth / 3-diketonate precursor for the preparation of bismuth ceramic thin films that are integrated in a ferroelectric recording device. This is a reference for all purposes in this example. Bismuth-based gas deposited by CVD in amorphous The bismuth-based gaseous layer deposited by CVD amorphous deposition is described in the trial National patent application USSN 09/1 07, 8 6 1, the name is "amorphous deposited metal oxide ceramic film" (lawyer file number 98 P 7422), which is listed here for reference of each project. In a specific example In general, the bismuth-based metal vapor layer is generally represented by YaBibX20c, where Y includes a divalent cation and X includes a pentavalent cation. In a specific example, Y is equal to one or more elements selected from Sr, Ba, Pb, and Ca. X, in a specific example, is equal to one or more elements selected from Ta and Nb. Note foot "a" refers to the number of Y atoms per 2x atoms; footnote 1 10- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) ------------ i ---------- Order -------- 1- (Please read the precautions on the back before filling this page) 475220 A7 B7 V. Description of the invention (9) "b" means each The number of B i atoms that 2 X atoms have; and the footnote "e" refers to the number of chlorine atoms per 2 X atoms. In a specific example, the bismuth-based chloride ceramic contains Sr. Bismuth gasses containing Sr and Ta are also available. Preferably, the bismuth-based vapor contains S r a B a b T a 2 0. . Derivatives of S B T are also available. S B T derivative ® ^ Sra Bib Ta2 Nbx 0c (0 &lt; x <2), SraBibNb2〇c,

Sra-x Bax Bib Taa.-x Nbx 0〇 (0 ^ x ^ 1 , y S 2 ),Sra-x Bax Bib Taa.-x Nbx 0〇 (0 ^ x ^ 1, y S 2),

Sra-x Cax Bi2 Ta2-x Nbx 09 (OSx SI, 0 ^ y ^ 2),Sra-x Cax Bi2 Ta2-x Nbx 09 (OSx SI, 0 ^ y ^ 2),

Sra-x Pbx B12 Ta2-x Nbx Oc (0 ^ x SI, y ^ 2 ), 或 Sra 一 x-y-z Bax CayPbz Bib T 3 2 - p Hbp 0 〇 (0^ x Sa ,OSySa, 0SP $2)。用鑭条金屬取代或 摻雜之鉍基氧化物或SB T衍生物也為可用。 用於形成鉍基氧化物陶瓷之前置物和反應性氣體，記 述於審理中之美國專利申請案USSN 08/975, 087,名 稱為”低溫CVD法用冷-二酮酸鉍前置物製備集積於鐵電 記億裝置中之鉍陶瓷薄膜”，其已於1 9 9 7年1 1月2 0 日申請在案；和在審理中之美國專利申請案USSN 08/ 960, 915,名稱為”無水單核三（&gt;3-二酮酸）鉍組成物及 經濟部智慧財產局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 其製法”，其已於1997年10月30日申請在案，且皆在此 列供所有各項目的之參考。 在一具體例中，鉍基氧化物陶瓷之鉍前置物含有召-二酮酸鉍。較佳者，鉍前置物含有Bi(thd)3。烴氣基 鉍。羧酸鉍、鉍醯胺物、和鉍之芳香物均可用作鉍前置 物。在一具體例中鉍芳香基前置物含有BiPh3。 -11 一 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 475220 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（1G ) 鉍基氯化物陶瓷之Sr前置物含有例如/3 -二酮酸緦。 在一具體例中，Sr前置物含有Sr(thd)2、Sr(thd)2 (加 成物），其如Sr(thd)2 (五甲基二乙烯三胺）或Sr(thd)2 (四甘，|二甲醚）特別有用。 鉍基氣化物陶瓷之Ta前置物含有例如Θ -二酬酸鉅之 烴氣基物，其如Ta(thd)x (0R)—x。Ta前置物之如 Ta(thd)(0-i-Pr)4 者也為有用。 在另一具體例中，SBT或SBT所衍生之薄膜是用Bi(thd)3 、Sr (thd) 2五甲基二乙烯三胺加成物、和Ta (0- i - Pr ) 4 (t h d )等前置物形成。其他用於澱積鉍基氧化物之前置物 也可採用。 各種前置物可以値別溶解於一溶劑条統中，並貯存一 特定之分給条統之容器中。各前置物在澱積前以正確之 比率混合。在單一容器中混合各前置物也為可用。各種 前置物應僳高度可溶於溶劑条統中。各前置物在溶劑条 統中之溶解度例如約為0.1〜5Mr,約為0.1-2M或約為0.1 -1M之溶解度也為可用。Sra-x Pbx B12 Ta2-x Nbx Oc (0 ^ x SI, y ^ 2), or Sra-x-y-z Bax CayPbz Bib T 3 2-p Hbp 0 〇 (0 ^ x Sa, OSySa, 0SP $ 2). Bismuth-based oxides or SB T derivatives substituted or doped with lanthanum bar metals are also useful. Preforms and reactive gases used to form bismuth-based oxide ceramics, described in the pending US patent application USSN 08/975, 087, entitled "Cryogenic CVD Bismuth Diketonate Precursor for Preparing and Accumulating Iron" "Bismuth ceramic thin film in a telegraph device", which was filed on November 20, 1997; and the pending US patent application USSN 08/960, 915, entitled "Waterless Bill" Nuclear tris (&gt; 3-diketoacid) bismuth composition and printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) and its production method, " Japanese applications are on file, and are listed here for reference of all items. In a specific example, the bismuth precursor of the bismuth-based oxide ceramic contains bismuth-diketonate. Preferably, the bismuth precursor contains Bi (thd) 3. Hydrocarbon gas based bismuth. Bismuth carboxylate, bismuth ammonium, and bismuth aromas can be used as bismuth precursors. In a specific example, the bismuth aromatic precursor contains BiPh3. -11 A paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 475220 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (1G) Before Sr for bismuth-based chloride ceramics The contents contain, for example, / 3-diketonate. In a specific example, the Sr precursor contains Sr (thd) 2, Sr (thd) 2 (adduct), such as Sr (thd) 2 (pentamethyldiethylenetriamine) or Sr (thd) 2 ( Tetraethylene, | dimethyl ether) is particularly useful. The Ta precursor of a bismuth-based gas ceramic contains, for example, a hydrocarbon gas base of Θ-dicarboxylic acid, such as Ta (thd) x (0R) -x. Ta precursors such as Ta (thd) (0-i-Pr) 4 are also useful. In another specific example, the SBT or SBT-derived film is made of Bi (thd) 3, Sr (thd) 2 pentamethyldiethylenetriamine adduct, and Ta (0-i-Pr) 4 (thd ) And so on. Other precursors for depositing bismuth-based oxides can also be used. The various precursors can be separately dissolved in a solvent system and stored in a specific container for the system. The individual precursors were mixed at the correct ratio before deposition. It is also useful to mix the individual preforms in a single container. The various precursors should be highly soluble in the solvent system. The solubility of each of the precursors in the solvent system is, for example, about 0.1-5Mr, about 0.1-2M or about 0.1-1M is also usable.

鉍基金靨化合物層在適當條件下退火，轉變成為鐵電 材料。通常，退火是進行於約為5 0 0 - 8 5 0 υ之溫度。金屬 氣化物層退火於約 600-8001C, 650-750 TJ, 600-700C ，或6 5 0-700¾為合用。退火溫度可隨所澱積薄膜之性質 而定。例如，非晶澱積膜可退火於比較低之溫度。退火 將金屬氣化物層轉變成為有高度紋理之鐵電材料。 導電曆157澱積於鐵電層上而成為頂電極。導電層含有 -12- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------^--------訂 --------線 (請先閱讀背面之注意事項再填寫本頁) 475220 A7 B7 五、發明說明（ 11 如 例 電 充 成 形 他 其 〇 屬 金 貴 之 等 h R 或 接紋 連圖 ， 成 極製 電要 用需 共依 一 是 作極 Hu 1MJ 月 霄 極頂 電 〇 頂中 常之 通列 ,131 0 陣 用億 可記 為於 也器 料容 材電 之他 極其 可 m 二 理 處 熱 之 後 積 澱 1 另 〇 Q 開 觸 〇 接行 之進 用後 線之 字成 和形 線層 位電 置導 設在 理電 處持 之支 加成 另形 εΕ tin 種括 此包 m: 〇 理 C I 處 億之 記加 電另 鐵種 成此 完 ， 以如 理例 處 。 之知 加熟 另所 行者 進業 為 供 中 層 化 鈍 在 〇 ，等 層裝 化包 鈍和 之 ， 後 口 最開 ，觸 口接 開之 觸框 接引 之至 線接 位連 至和 ，試 路測 以晶 物結 化之 氧層 屬物 金化 基氧 鉍屬 之金 理基 紋鉍 晶 〇 結用 有作 含化 置極 設之 ，換 明切 發可 本度 據高 ,根生 産 晶 〇 結用 之作 物化I 化極 氣之 屬性 金換 基切 鉍可 使進 。增 用以 作可 化向 極方 之之 換確 切正 可於 響向 影定 mi ^ rm 一 理理 紋紋 切平 和在 5 ο 向關 方有 量弦 向餘 化之 極度 之角 晶之 結間 電向 鐵場 與之 量加 化施 極所 之置 換裝 切之 被化 可極 換 底切 和 ， 頂中 之形 電 情 導之 於體 直晶 垂電 以電 場鐵 換在 切 。 ，上 中層 形電 情鐵 之於 器施 容向 電方 板之 的極 行電 。施 上所 層與 電量 鐵向 於化 施極 向之 方晶 之結 極電 電鐵 底於 和自 頂得 之是 電化 導極 於換 直切 垂可 以的 場大 換最 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂--------吟 經濟部智慧財產局員工消費合作社印製 為 即 亦 值 大 最 弦 餘 生 産 弦 餘 之 ο ο 為 而 正 對 C 場時 之之 鈣 J B 化 S 層 〇 之示 BT表 #s09 鐵 2 示Ta 表 2 i ， B 圖 S 3 式 第如 考例 參以 是 精 結 礦 鈦 之 膜 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 475220 A7 _B7_五、發明說明（1 2 ) 相含有由帶正電之B i氧化物 3 1 0所分隔而帶負電荷之 S r和T a等之氣化物之鈣鈦礦形&quot;層305。Sr和Ta等之氧化 物之化學計量為例如〔S r T a 2 0 7〕2n~n，而B i氣化物層 之化學計量為例如〔B i 2 0 2〕2n+n，促成替之以 i SrTa 2 0 7 l211'和〔B i 2 〇 2〕2n+n 各層之結構。 如第3圖所示，S B T之極化方向是沿a -軸。b -軸代表 潛在的極化方向。a -軸和b -軸例如可以因鐵電材料在 9 0 °間之區域中間作無擴散之形變而互換。此種形變 (成極（Ρ ο 1 U g ))以施加電場而發生。c -軸，在另一方面，垂直於結構的B i -氧化物層。在此 方向中，少有甚至無可切換之極化能夠被引發。所以， 晶 結 用 作 化 SB極 軸換 b-切 或可 / 出 及獻 軸貢 a， 有中 具向 有場 口 ί 之 換 切 施 所 置 裝 在 例 體 具 一 軸 之b-明或 發\ 本一及 據一軸 /艮 * UM. a \子 格分 晶之 結丨 生 産 而 m: 理 紋 晶 結 有 含 向 方 之 場 之 施 所 置 裝 換 切 即 亦 晶用 結配 ，大 中加 向將 方 ， 之大 場增 施之 所數 置均 裝平 換一量 切、分 在各 fmw ο 車 大b-增或 以 \ 得及 數軸 -35. 均a-平子、 量格 ------------ ----I---訂---------^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 鉍之 ，施 者所 佳置 較裝 。換 用切 作在 化使 極 ， 換理 切紋 可晶 的結 置有 裝含 之瓷 物陶 化物 氣化 屬氣 金鼷 基金 鉍基 塑 影 量 計 0 學 大化 最或 至成 增組 數之 均層 平物 之化 量氣 分屬 各金 向基 方鉍 化現 極發 , 已 中人 向吾 場 受向 成場 組施 的所 層置 物裝 化換 氣切 屬在 金加 基增 鉍 ， mil » 理 中紋 例晶 體結 。具種 理 一 一 紋之生 晶明産 結發而 的本制 層在控 到 到 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 475220 A7 _B7_ 五、發明說明（1 3 ) 中各極化之方向之分量之平均數。較佳者，鉍基金屬氧 化物之結晶紋理含有一種取向，使在切換裝置所施場向 中各極化方向分量之平均數達到最大。在一具體例中， 結晶紋理造以在切換裝置所施場向中a -軸及/或b -軸方 向者之平均數增大。 在本發明之一具體例中，鉍基金屬氯化物層以 Y a B i b X 2 〇 c表示。Y a B i b X 2 〇 c層之組成受到控制 而産生結晶紋理，增大在切換裝置所施場向中各極化分 量（在3 -軸及/或b -軸方向）之平均數。較佳者， Y a B i b X 2 〇 C層之組成受到控制而産生結晶紋理，使 在切換裝置所施場向中各極化分量（在a -軸及/或b -軸 方向）之平均數增至最大。 在一具體例中，YaBibX20c之組成含有Y/2X約為 0.5-0.9之比率，較佳者約為0.6-0.8,更佳者為0,7-0,8 。鉍基金鼷氣化物之Bi/2X(:b率，在一具體例中，約為 2.0-2.6,較佳約 2. 1-2.5,更佳為 2. 1-2,3。 在一較佳具體例中，含SBT之鉍基金屬氣化物之組成 含有約為0,5-0,9之S「/2Ta比率，較佳為約0.6-0.8,更 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 在 2 量 ，為含 率佳 Y 比更或 a Γ T » S 2 5 / ·之 Ϊ 2 J B I 物 之1化 πι 氣 屬 金 基 1 * 7 6 祕 ο 2 少 為0-減 bfc · 約 佳 較The bismuth-based rhenium compound layer is annealed under appropriate conditions and transformed into a ferroelectric material. Generally, annealing is performed at a temperature of about 5 0-8 5 0 υ. The metal vapor layer is annealed at about 600-8001C, 650-750 TJ, 600-700C, or 6 5 0-700¾. The annealing temperature may depend on the nature of the deposited film. For example, the amorphous deposited film may be annealed at a relatively low temperature. Annealing transforms the metal vaporization layer into a highly textured ferroelectric material. A conductive calendar 157 is deposited on the ferroelectric layer to become a top electrode. The conductive layer contains -12- This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) ------------ ^ -------- Order --- ----- Line (please read the precautions on the back before filling this page) 475220 A7 B7 V. Description of the invention (11 For example, the electric charge forming is other than Jin Guizhi's h R or connection pattern, which is extremely polar The electricity needs to be used in accordance with the same principle. It is used as a pole for Hu 1MJ moon pole pole electricity. It is often used in the top row. The 13 million arrays can be used as the material and electricity. It can be deposited after the second heat treatment. 1 Another 〇Q contact 〇The line after the use of the line of the zigzag and shape line level electrical equipment set at the R & D Department to support the additional shape ε E tin includes this package m: 〇 Management CI processing billion This is the end of the power-up and another iron type, as the example shows. It is known that the other practitioners enter the industry for the middle-level bluntness at 0, and the equivalence of the package is blunt, and the back mouth is the most open, and the mouth is open. The contact frame that is opened is connected to the line, and the line is connected to the ground. The basal bismuth crystal is used as an electrode, which can be used to change the hair. It can be used for cutting and cutting hair, and the properties of the crops used to produce crystals can be changed to gold. The increase is used to make the change to the extreme side, which can be exactly set in the Xiang Xiangying set mi ^ rm, the grain line is cut flat, and at 5 ο Xiangguan side, there is a degree of extreme corner crystals that are left to the left and the side of the corner. The electric current is added to the iron field and the amount of the replacement of the electrode is changed by the undercut, and the shape of the top shape leads to the body orthogonal vertical electricity, which is replaced by the electric field iron. The medium-level electric iron applies electricity to the pole of the electric square plate. Applying the layer and the electric capacity of the iron to the electrode of the square crystal junction electrode electric iron bottom and from the top is the electrification The guide is the best place to change the straight and vertical (please read the precautions on the back before filling this page). -------- Order -------- Intellectual Property Bureau, Ministry of Economic Affairs Printed by the employee consumer cooperatives as the value of the largest and most stringent production of the product. Ο ο To face the C field The Calcium JB layer S layer 0 The BT table # s09 The iron 2 The Ta table 2 i, B Figure S 3 The formula is as shown in the example of the reference is the fine-grained mineral titanium film This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 475220 A7 _B7_ V. Description of the invention (1 2) Phase contains gases such as S r and T a separated by positively charged B i oxide 3 1 0 and negatively charged Perovskite-shaped &quot; layer 305. The stoichiometry of oxides such as Sr and Ta is [S r T a 2 0 7] 2n ~ n, and the stoichiometry of the B i gaseous layer is, for example, [B i 2 0 2] 2n + n. The structure of each layer is i SrTa 2 0 7 l211 'and [B i 2 〇2] 2n + n. As shown in Figure 3, the polarization direction of S B T is along the a-axis. The b-axis represents the direction of potential polarization. The a-axis and the b-axis can be interchanged, for example, because the ferroelectric material is deformed without diffusion in the middle between the 90 ° regions. This deformation (polarization (P ο 1 U g)) occurs by applying an electric field. The c-axis, on the other hand, is perpendicular to the Bi-oxide layer of the structure. In this direction, few or even no switchable polarizations can be induced. Therefore, the crystal junction is used to change the SB polar axis for b-cut or can / export and provide the axis for a, and the center-to-field switch for the cutting device is installed in the example of the axis of the b-ming or hair. \ This one and according to one axis / Gen * UM. A \ The sub-lattice knot 丨 production and m: The grain pattern crystal knot has a field containing a square field. Adding to the side, the number of large fields added by the installation of all equipment is installed and replaced with a cut, divided in each fmw ο car large b- increase or with \ to get the number axis -35. A average, flat, quantitative --- --------- ---- I --- Order --------- ^ (Please read the precautions on the back before filling out this page) For the system of bismuth, it is better to be installed by the donor. Switch to the cutting pole, and the crystal grains can be crystallized. The ceramics containing the ceramics are gasified. It is a gas-based gold bismuth-based plastic fluorometer. The amount of homogeneous flat matter is divided into gold and basal bismuth, which has been released by the Chinese people to our field. The ventilation of the layer is to increase the bismuth in jinjiaji, mil »Crystalline crystal knots. The layer produced by the germination of crystal grains with a variety of textures is controlled to the size of this paper. The Chinese national standard (CNS) A4 specification (210 X 297 mm) is applicable. 475220 A7 _B7_ V. Description of the invention (1 3) The average of the components of each polarization direction in. Preferably, the crystalline texture of the bismuth-based metal oxide contains an orientation that maximizes the average number of components of each polarization direction in the field direction applied by the switching device. In a specific example, the crystalline texture is such that the average number of a-axis and / or b-axis directions in the field direction applied by the switching device increases. In a specific example of the present invention, the bismuth-based metal chloride layer is represented by Y a B i b X 2 0 c. The composition of the Y a B i b X 2 0 c layer is controlled to produce a crystalline texture, which increases the average of each polarization component (in the 3-axis and / or b-axis direction) in the field direction applied by the switching device. Preferably, the composition of the Y a B ib X 2 OC layer is controlled to produce a crystalline texture, so that the average of each polarization component (in the a-axis and / or b-axis direction) in the field direction applied by the switching device is averaged. The number increased to the maximum. In a specific example, the composition of YaBibX20c contains a ratio of Y / 2X of about 0.5-0.9, preferably about 0.6-0.8, and more preferably 0,7-0,8. The Bi / 2X (: b ratio of the bismuth fund tritium gaseous compound, in a specific example, is about 2.0-2.6, preferably about 2.1-2.5, and more preferably 2. 1-2, 3. In the specific example, the composition of the bismuth-based metal vapor containing SBT contains an S "/ 2Ta ratio of about 0,5-0,9, preferably about 0.6-0.8, and more (please read the precautions on the back before filling in (This page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs in 2 volumes, which have a good content ratio of Y, or a Γ T »S 2 5 / · Ϊ 2 JBI 物 的 化 πι gas belongs to the gold base 1 * 7 6 Secrets ο 2 Less 0-minus bfc

及反 hM ίΤΓΤ 奉 丰 a 示 中教 向之 方見 直習 垂與 板果 或結纟 含 層項 P 電此S 導 器加SB 為 約 中 例 體 具 容 電 與 在 生 産 將 增少 之減 數議 均建 平 示 之教 軸之 b-知 或習 大 增 之 中 向 取 軸 I C 之 化 極 不 在 成 造 以 量 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 475220 A7 _B7_ 14 五、發明說明（） 見於H a s e等人：”在S r B i 2 T a 2 0 9薄膜中S r含量依鐵電 性質而定&quot;Integrated Ferroetectrics,第 15卷，卩127-135(1997)0 W w m 許多具有不同組成的S B T膜被形成於已製成之基板上 。此等基板含有6 2 5奈米厚之熱氧化矽層，在氧化物上 以約於4 5 ϋ °C濺鍍有1 Q奈米厚之T i層。底電極含有約為 1 0 0奈米厚之P t，是於約1 9 0 °C濺鍍於T i上而形成。 S B T膜被澱積於P t電極上。形成S T膜所用之前置物為 S r ( t hd) 2 s B i ( t hd) 3、和 Ta(thd)(0-i-Pr)4 〇 SBT膜 是以非晶澱積於約為3 8 Q °C之溫度和約為9托爾之壓力 ，且在6 0 % 0 2 : 4 0 % A r之氣氛中。氣體流速為1 . 6 s 1 m (每分標準公升）或1 G s 1 Hi，隨不同之膜而定。膜成長至 自1 5 0奈米至2 0 G奈米。所澱積之S B T膜被退火於流動之0 2 和約8 Q (TC中約1小時。P t是以電子束經過一影罩蒸發 而形成頂電極。第二次退火進行於流動0 2和8 0 Q °C中約 1 5分鐘。 S B T膜經分析而決定其在定向、組成、和電性等之間 的關像。電性測試在R a d i a n t R T 6 0 0鐵電測試儀中進行。 組成在Rigaku 3613 X光螢光光譜儀中用Rigakii之「基 本因數」法和Μ 0 D薄膜標準，於8毫米直徑區域内量測 。紋理是在Rigaku D/maxB測角儀中用單色儀和Cu X光 靶，由對稱之0-20(Bragg-Brantano)幾何形狀中不同 尖峰之強度估算。發散隙為1° ,接收隙為0.3° ，而用於 -1 6 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) · an I I I ϋ ϋ 一 口、_ mmmm mmm mmm mmm mmm 着 475220 A7 B7 五、發明說明（15 ) 單色儀之接收隙為0 . 6 ° 。 第4 _表示（200) / (020)峰之強度作為組成之函數。 各點指示所測膜之組成，而曲線指示内插強度作為組成 之函數。（2 0 0 )峰對應於a -軸而（0 2 0 )峰對應於b _軸。 (2 0 0 )和（0 2 0 )之定向在此量測中因兩者之晶格因數非常 接近而未能區別。在S r / 2 T a比率減小而B i / 2 T a比率增大 時，（200 )之定向為較佳。 第5圖表示（115)峰之強度作為組成之函數。各點指示 所量測之膜之組成，而曲線指示外插強度作為組成之函 數。（115)峰對應於a-軸和b-軸各分量。Sr/2Ta之較低 比率和B丨/ T a之中間值提舁（1 1 5 )定向之優質性。 第6圖表示（00 ’10)峰之強度作為組成之函數。各點 指示所量測之膜之組成，而曲線指示外插強度作為組成 之函數。（00f10)峰對應於c -軸。如此可見，Sr/2Ta比 率較低者將降低（00 ’10)定向之優質性。 從第4-6圖可見a -軸紋理和b_軸紋理之值可被增加至 幾乎將可量測c -軸之材料排除在外。當（0 0 ’ 1 0 )紋理減 少而a -軸和b -軸加大，可切換之極化增加。此即說明電 容器板與結晶之極化方向間之關偽。再者，第4 - 6圖表示 膜之紋理受膜之組成所影饗。若Sr之化學計量組成由1.00 減至0.75-0.80，刖（00’10)峰減 而（115)和（200)峰相And anti-hM ίΤΓΤ Fengfeng a teaching direction to learn directly from the board and fruit or crusted layered items P electricity this S guide plus SB is about the example of the capacity and the reduction in production will be reduced The b-knowledge of the teaching axis or the large increase in the number of ICs in the teaching axis is not in the making. The paper standard is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). Printed by the Intellectual Property Bureau employee consumer cooperative 475220 A7 _B7_ 14 V. Description of the invention () See Hase et al .: “The content of S r in S r B i 2 T a 2 0 9 film depends on the ferroelectric properties &quot; Integrated Ferroetectrics, Volume 15, 卩 127-135 (1997) 0 W wm Many SBT films with different compositions are formed on finished substrates. These substrates contain a 6 2 5 nm thick layer of thermal silicon oxide. The oxide is sputtered with a Ti layer of 1 Q nanometer thickness at about 45 ° C. The bottom electrode contains Pt of about 100 nanometers thickness and is sputtered at about 190 ° C. T i is formed. SBT film is deposited on the P t electrode. The former used to form the ST film is S r (t hd) 2 s B i (t hd) 3, and Ta (thd) (0-i-Pr) 4 〇SBT film is amorphous deposited at a temperature of about 3 8 Q ° C and a pressure of about 9 Torr, and at 6 0% 0 2: 40% A r atmosphere. The gas flow rate is 1.6 s 1 m (standard liters per minute) or 1 G s 1 Hi, depending on the film. The film grows to 15 0 Nanometers to 20 G nanometers. The deposited SBT film is annealed at flowing 0 2 and about 8 Q (about 1 hour in TC. P t is the top electrode formed by the electron beam evaporating through a shadow mask. The secondary annealing was performed at a flow rate of 0 2 and 80 0 ° C for about 15 minutes. The SBT film was analyzed to determine its correlation between orientation, composition, and electrical properties. Electrical tests were performed on a Radiant RT 6 0 0 Ferroelectric tester. The composition was measured in the Rigaku 3613 X-ray fluorescence spectrometer using Rigakii's "fundamental factor" method and M 0 D film standard in an 8 mm diameter area. The texture was measured at Rigaku D / maxB A monochromator and a Cu X-ray target are used in the goniometer, and the intensity of different peaks in the symmetrical 0-20 (Bragg-Brantano) geometry is estimated. The divergence gap is 1 ° and the receiving gap is 0.3 °. 1 6-this paper size applies National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) · an III ϋ 口, _ mmmm mmm mmm mmm mmm author 475220 A7 B7 V. Description of the invention ( 15) The receiving gap of the monochromator is 0.6 °. The 4th _ represents the intensity of the (200) / (020) peak as a function of composition. Each point indicates the composition of the film being measured, while the curve indicates the interpolation intensity as a function of the composition. The (2 0 0) peak corresponds to the a-axis and the (0 2 0) peak corresponds to the b _ axis. The orientations of (2 0 0) and (0 2 0) cannot be distinguished in this measurement because the lattice factors of the two are very close. When the S r / 2 T a ratio decreases and the B i / 2 T a ratio increases, the orientation of (200) is better. Figure 5 shows the intensity of the (115) peak as a function of composition. Each point indicates the composition of the film being measured, and the curve indicates the extrapolated intensity as a function of composition. (115) The peaks correspond to the a-axis and b-axis components. The lower ratio of Sr / 2Ta and the median value of B 丨 / T a improve (1 1 5) the quality of orientation. Fig. 6 shows the intensity of the (00'10) peak as a function of composition. Each point indicates the composition of the film being measured, while the curve indicates the extrapolation intensity as a function of the composition. The (00f10) peak corresponds to the c-axis. It can be seen that the lower Sr / 2Ta ratio will reduce the quality of (00'10) orientation. From Figures 4-6, it can be seen that the values of a-axis texture and b_axis texture can be increased to almost exclude the measurable materials of c-axis. When the (0 0 ′ 1 0) texture decreases and the a-axis and b-axis increase, the switchable polarization increases. This explains the false relationship between the capacitor plate and the polarization direction of the crystal. In addition, Figures 4-6 show that the texture of the film is affected by the composition of the film. If the stoichiometric composition of Sr is reduced from 1.00 to 0.75-0.80, the 刖 (00’10) peak is reduced and the (115) and (200) peak phases are reduced.

Ah 互比較加大。若Sr/2Tal:b率約在0·65-0·80之範圍内而 Bi/2Ta比率由約2.0増至2.3,則（200)峰之強度增加而 (0 0 ’ 1 0 )維持最小。 -17- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂----- 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 475220 A7 _B7_ 五、發明說明（1 6 ) 第7圖表示可切換之極化（2 P r〇相對於組成之相互關 俗。從而可見，可切換之極化，在S r / 2 T a降至0 . 7 5以下 ,而8丨/21^約從2.0至2.5時，加大。 雖然本發明已經參照各具體例而特別表示和説明，熟 悉此技藉者將可認為在不脱離本發明之精神與範圍之 下可能修改和變更者。本發明之範圍因而不僅參照上述 之說明所決定，而是參照所附申請專利範圍各項以及其 所相當之全部範圍。 符號之説明 100......鐵電記億元件 10 1......基板 110......電晶體 11 1......第一電極；擴散區域 112 ......第二電極；擴散區域 113 ......通路 114 ......_ 極 118......接地 125 ......位線 126 ......字線 140......接觸插頭 150 ......鐵電電容器 151 ......導電阻隔層 153......第一 Η (電容器）；底電極；導電層 155......鐵電層；鉍基金屬氣化物層 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） .^1 ϋ ϋ ϋ n ϋ 1»1 ϋ n .^1 i ϋ ϋ .^1 ϋ n ϋ 一：°JI ϋ I ·ϋ I ϋ I I (請先閱讀背面之注意事項再填寫本頁) 475220 A7B7 7 1C 明說 明發 7 5 ο 6 ο5Κ ο ο 3 3 ο 電鈦之之 Η 介鈣電電 二間化負正 第層層帶帶 層 霞 導 極 電 頂 # f )/ 器 容 電 層礦 層 型 礦 鈦 0 物 化層 構氣物 結Ta化 型和氣 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------嗅 經濟部智慧財產局員工消費合作社印製 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Ah increased each other. If the Sr / 2Tal: b ratio is in the range of about 0.65-0.80 and the ratio of Bi / 2Ta is from about 2.0 増 to 2.3, the intensity of the (200) peak increases and (0 0 ′ 1 0) is kept to a minimum. -17- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed 475220 A7 _B7_ V. Description of the invention (1 6) Figure 7 shows the switchable polarization (2 P r0 relative to the composition of each other As a result, it can be seen that the switchable polarization increases when S r / 2 T a falls below 0.75, and 8 丨 / 21 ^ increases from about 2.0 to 2.5. Although the present invention has been referred to various specific Examples are specifically shown and explained, those skilled in the art will be able to consider that modifications and changes may be made without departing from the spirit and scope of the present invention. The scope of the present invention is therefore determined not only with reference to the above description, but with reference to all Attach the scope of the patent application and its equivalent scope. Explanation of Symbols 100 ... 100 million ferroelectric components 10 1 ... substrate 110 ... transistor 11 1. ..... first electrode; diffusion region 112 ... second electrode; diffusion region 113 ... via 114 ... _ pole 118 ... Ground 125 ... bit line 126 ... word line 140 ... contact plug 150 ... ferroelectric capacitor 151 ... conductive resistance barrier 153. ..... First Η (capacitor); bottom electrode; conductive layer 155 ... ferroelectric layer; bismuth-based metal gaseous layer This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297) Mm). ^ 1 ϋ ϋ ϋ n ϋ 1 »1 ϋ n. ^ 1 i ϋ ϋ. ^ 1 ϋ n ϋ One: ° JI ϋ I · ϋ I ϋ II (Please read the precautions on the back before filling out this (Page) 475220 A7B7 7 1C Instructions 7 5 ο 6 ο 5Κ ο ο 3 3 ο Η of the electric titanium Η dielectric calcium electric two interlayer negative positive first layer with band layer Xia conductive pole top # f) / capacitor capacity Ore-layer type Ore-type titanium 0 Physicochemical layer structure gas-condensation Ta-type gas (Please read the precautions on the back before filling this page) Loading -------- Order --------- Smell economy Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperatives 9 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

475220475220 六、申請專利範圍 第88 120430號「具有紋理之鉍基氧化物陶瓷膜」專利案申覆 書 （90年8月修正） 六申請專利範圍 1. 一種麵電裝置，包括： 導電性層； 以電接觸於導電性層之鉍基鐵電層，其中之鉍基鐵電 層包括受鉍基鐵電層之組成所控制之結晶紋理。 2·如申請專利範圍第1項之鐵電裝置，其中之結晶紋理包 括產生高度可切換之極化作用之定向。 3. 如申請專利範圍第2項之鐵電裝置，其中鉍基鐵電層 之結晶紋理，係經定向以使在垂直於導電性層之極化作 用方向平均分量上得以增大。 4. 如申請專利範圍第2項之鐵電裝置，其中鉍基鐵電層 之結晶紋理，係經定向以使在垂直於導電性層之極化作 用方向之平均分量上達到最大。 5. 如申請專利範圍第2、3或4項之鐵電裝置，其中之鉍 基鐵電層係以YaBibX20。表示，其Y包括2個陽離子而 X包括5價陽離子。 6. 如申請專利範圍第5項之鐵電裝置，其中： γ等於一或多種選自包括Sr、Ba、Pb、和Ca等一組 之元素；和 X等於一或多種選自包括Ta和Nb —組之元素。 7. 如申請專利範圍第6項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲0.5-0.9之Y/2X。 475220 六、申請專利範圍 8. 如申請專利範圍第6項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲2.0-2.6之Y/2X。 9. 如申請專利範圍第6項之鐵電裝置，其中鉍基金屬氧化 物之fe成包括比例約爲0.6-0.8之Y/2X。 10. 如申請專利範圍第9項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲2.1-2.5之Bi/2X。 11. 如申請專利範圍第6項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲0.7-0.8之Y/2X。 1Z如申請專利範圍第11項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲2.1_2.3之Bi/2X。 ia如申請專利範圍第5項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲0.5-0.9之Y/2X。 14. 如申請專利範圍第1 3項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲2.0-2.6之Bi/2X。 15. 如申請專利範圍第5項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲0.6-0.8之Y/2X。 16. 如申請專利範圍第1 5項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲2.1-2.5之Bi/2X。 17如申請專利範圍第5項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲0.7-0.8之Y/2X。 18. 如申請專利範圍第17項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲2.1-2.3之Bi/2X。 19. 如申請專利範圍第5項之鐵電裝置，其中鉍基鐵電層包 括Sr和Ta。 -2- 、申請專利範圍 20·如申請專利範圍第19項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲0.5-0.9之Y/2X。 21·如申請專利範圍第20項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲2.0-2.6之Bi/2X。 22«如申請專利範圍第19項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲0.6-0.8之Y/2X。 23.如申請專利範圍第22項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲2.1-2.5之Bi/2X。 如申請專利範圍第19項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲0.7-0.8之Y/2X。 怨如申請專利範圍第24項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲2.1-2.3之Bi/2X。 26如申請專利範圍第19項之鐵電裝置，其中鉍基鐵電層包 含 SraBibTa2Oc(SBT)。 27.如申請專利範圍第26項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲0.5-0.9之Sr/2Ta。 览如申請專利範圍第27項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲2.0-2.6之Bi/2Ta。 2R如申請專利範圍第26項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲0.6-0.8之Sr/2Ta。 3α如申請專利範圍第29項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲2.1-2.5之Bi/2Ta。 31如申請專利範圍第26項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲0.7-0.8之Si:/2Ta。 475220 六、申請專利範圍 32如申請專利範圍第3 1項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲2.1-2.3之Bi/2Ta。 33如申請專利範圍第5項之鐵電裝置，其中鉍基鐵電層包 括SBhT之衍生物。 34如申請專利範圍第33項之鐵電裝置，其中SBT衍生物 含有一種鉍基氧化物，選自包括SraBibTa2_xNbxOe(0&lt;x &lt;2)，SraBibNb2〇c、Sra_xBaxBibTaa_yNby〇c(0 S X Sa，OSy S2)，Sra_xCaxBibTa2_yNby〇c(0Sx Sa，0SyS2)， Sra.xPbxBibTa2.yNbyOc(0^x Sa，0SyS2)，或 Sra-x-y_zBaxCayPbzBibTa2_pNbp〇c(0 ‘ x ‘a，0‘y‘a，0‘一 ，0€ z S2)之組合。 35如申請專利範圍第34項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲0.5-0.9之Y/2X。 36如申請專利範圍第35項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲2.0-2.6之Bi/2X。 37如申請專利範圍第34項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲0.6-0.8之Y/2X。 3&amp;如申請專利範圍第37項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲2.1-2.5之Bi/2X。 3Q如申請專利範圍第34項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲0.7-0.8之Y/2X。 4),如申請專利範圍第39項之鐵電裝置，其中鉍基金屬氧化 物之組成包括比例約爲2.1-2.3之Bi/2X。 41,一種製作鐵電裝置之方法，包括： -4- 475220 六、申請專利範圍 澱積鉍基鐵電層於一基質上，其中鉍基鐵電層之結晶紋 理受其組成所控制。 42—種製作鐵電電容器之方法，包括： 澱-第一導電層； 澱積鉍基鐵電層於第一導電層上，其中鉍基鐵電層之 結晶紋理受其組成所控制，和 澱積第二導電層，其中第一和第二導電層係作爲鐵電 電容器用之電極。6. Application for Patent Scope No. 88 120430 "Texture-Based Bismuth-Based Oxide Ceramic Film" Patent Application (Amended in 1990) 6. Application for Patent Scope 1. A surface-electric device including: a conductive layer; A bismuth-based ferroelectric layer in electrical contact with the conductive layer, wherein the bismuth-based ferroelectric layer includes a crystalline texture controlled by the composition of the bismuth-based ferroelectric layer. 2. The ferroelectric device according to item 1 of the patent application, wherein the crystalline texture includes orientations that produce highly switchable polarization. 3. For example, the ferroelectric device in the scope of patent application, wherein the crystalline texture of the bismuth-based ferroelectric layer is oriented so as to increase the average component in the direction of polarization perpendicular to the conductive layer. 4. For example, the ferroelectric device in the scope of the patent application, wherein the crystalline texture of the bismuth-based ferroelectric layer is oriented so as to maximize the average component in the direction perpendicular to the direction of polarization of the conductive layer. 5. For the ferroelectric device with the scope of patent application No. 2, 3 or 4, the bismuth-based ferroelectric layer is YaBibX20. Indicates that its Y includes 2 cations and X includes a pentavalent cation. 6. The ferroelectric device as claimed in claim 5, wherein: γ is equal to one or more elements selected from the group including Sr, Ba, Pb, and Ca; and X is equal to one or more elements selected from the group including Ta and Nb. —The elements of the group. 7. The ferroelectric device according to item 6 of the patent application, wherein the composition of the bismuth-based metal oxide includes Y / 2X in a ratio of about 0.5-0.9. 475220 VI. Scope of patent application 8. For the ferroelectric device under the scope of patent application item 6, the composition of bismuth-based metal oxide includes Y / 2X with a ratio of about 2.0-2.6. 9. The ferroelectric device according to item 6 of the patent application, wherein the Fe component of the bismuth-based metal oxide includes Y / 2X in a ratio of about 0.6-0.8. 10. For example, the ferroelectric device under the scope of the patent application, wherein the composition of the bismuth-based metal oxide includes Bi / 2X with a ratio of about 2.1-2.5. 11. The ferroelectric device as claimed in item 6 of the patent application, wherein the composition of the bismuth-based metal oxide includes Y / 2X in a ratio of about 0.7-0.8. 1Z is a ferroelectric device according to item 11 of the scope of patent application, wherein the composition of the bismuth-based metal oxide includes Bi / 2X in a ratio of about 2.1 to 2.3. ia The ferroelectric device according to item 5 of the patent application, wherein the composition of the bismuth-based metal oxide includes Y / 2X in a ratio of about 0.5-0.9. 14. The ferroelectric device as claimed in item 13 of the patent application, wherein the composition of the bismuth-based metal oxide includes Bi / 2X in a ratio of about 2.0-2.6. 15. The ferroelectric device as claimed in item 5 of the patent application, wherein the composition of the bismuth-based metal oxide includes a Y / 2X ratio of approximately 0.6-0.8. 16. The ferroelectric device as claimed in item 15 of the patent application, wherein the composition of the bismuth-based metal oxide includes Bi / 2X in a ratio of about 2.1-2.5. 17. The ferroelectric device according to item 5 of the application, wherein the composition of the bismuth-based metal oxide includes Y / 2X in a ratio of about 0.7-0.8. 18. The ferroelectric device as claimed in claim 17 wherein the composition of the bismuth-based metal oxide includes Bi / 2X in a ratio of approximately 2.1-2.3. 19. The ferroelectric device as claimed in claim 5 wherein the bismuth-based ferroelectric layer includes Sr and Ta. -2- 、 Scope of patent application 20 · If the ferroelectric device of item 19 of the scope of patent application, the composition of the bismuth-based metal oxide includes Y / 2X with a ratio of about 0.5-0.9. 21. The ferroelectric device as claimed in claim 20, wherein the composition of the bismuth-based metal oxide includes Bi / 2X in a ratio of about 2.0-2.6. 22 «The ferroelectric device according to item 19 of the application, wherein the composition of the bismuth-based metal oxide includes Y / 2X in a ratio of about 0.6-0.8. 23. The ferroelectric device of claim 22, wherein the composition of the bismuth-based metal oxide includes Bi / 2X in a ratio of about 2.1 to 2.5. For example, the ferroelectric device in the scope of application for item 19, wherein the composition of the bismuth-based metal oxide includes Y / 2X in a ratio of about 0.7-0.8. For example, the ferroelectric device under the scope of patent application No. 24, wherein the composition of the bismuth-based metal oxide includes Bi / 2X in a ratio of about 2.1-2.3. 26. The ferroelectric device according to item 19 of the application, wherein the bismuth-based ferroelectric layer includes SraBibTa2Oc (SBT). 27. The ferroelectric device of claim 26, wherein the composition of the bismuth-based metal oxide includes Sr / 2Ta in a ratio of about 0.5-0.9. The ferroelectric device in the 27th scope of the patent application, wherein the composition of the bismuth-based metal oxide includes Bi / 2Ta in a ratio of about 2.0-2.6. 2R is a ferroelectric device according to item 26 of the application, wherein the composition of the bismuth-based metal oxide includes Sr / 2Ta in a ratio of about 0.6 to 0.8. 3α The ferroelectric device according to item 29 of the application, wherein the composition of the bismuth-based metal oxide includes Bi / 2Ta in a ratio of about 2.1 to 2.5. 31. The ferroelectric device of claim 26, wherein the composition of the bismuth-based metal oxide includes Si: / 2Ta in a ratio of about 0.7-0.8. 475220 VI. Scope of patent application 32 The ferroelectric device according to item 31 of the scope of patent application, wherein the composition of the bismuth-based metal oxide includes Bi / 2Ta in a ratio of about 2.1-2.3. 33. The ferroelectric device according to item 5 of the application, wherein the bismuth-based ferroelectric layer includes a derivative of SBhT. 34. The ferroelectric device according to item 33 of the application, wherein the SBT derivative contains a bismuth-based oxide selected from the group consisting of SraBibTa2_xNbxOe (0 &lt; x &lt; 2), SraBibNb20c, Sra_xBaxBibTaa_yNby〇c (0 SX Sa, OSy S2), Sra_xCaxBibTa2_yNby〇c (0Sx Sa, 0SyS2), Sra.xPbxBibTa2.yNbyOc (0 ^ x Sa, 0SyS2), or Sra-x-y_zBaxCayPbzBibTa2_pNbp〇c ('' y, a, 0 One, 0 € z S2) combination. 35. The ferroelectric device as claimed in claim 34, wherein the composition of the bismuth-based metal oxide includes Y / 2X in a ratio of about 0.5-0.9. 36. The ferroelectric device according to claim 35, wherein the composition of the bismuth-based metal oxide includes Bi / 2X in a ratio of about 2.0-2.6. 37. The ferroelectric device according to claim 34, wherein the composition of the bismuth-based metal oxide includes Y / 2X in a ratio of about 0.6 to 0.8. 3 &amp; The ferroelectric device according to item 37 of the application, wherein the composition of the bismuth-based metal oxide includes Bi / 2X in a ratio of about 2.1 to 2.5. 3Q The ferroelectric device according to item 34 of the application, wherein the composition of the bismuth-based metal oxide includes Y / 2X in a ratio of about 0.7-0.8. 4) If the ferroelectric device of item 39 of the patent application scope, wherein the composition of the bismuth-based metal oxide includes Bi / 2X in a ratio of about 2.1-2.3. 41. A method for manufacturing a ferroelectric device, including: -4- 475220 6. Application scope Patent depositing a bismuth-based ferroelectric layer on a substrate, wherein the crystalline texture of the bismuth-based ferroelectric layer is controlled by its composition. 42—A method for manufacturing a ferroelectric capacitor, comprising: depositing a first conductive layer; depositing a bismuth-based ferroelectric layer on the first conductive layer, wherein a crystalline texture of the bismuth-based ferroelectric layer is controlled by its composition, and depositing A second conductive layer is laminated, wherein the first and second conductive layers serve as electrodes for a ferroelectric capacitor.
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