475216 經濟部智慧財產局員工消費合作社印製475216 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
A7 __B7__五、發明說明（） 發明背景： (1) 發明範疇 本發明係有關一種半導體製稈設備，特別是有關於一種 化學機械硏磨蓋程設備。 (2) 先前技術 化學機械硏磨（CMP)機台是一種用來把晶圓產面磨平的 製程機台，該製程機台至少包含硏磨墊（polishing pad)等元 件。在進行化學機械硏磨製程時，硏磨墊上會注入有硏磨液 (slurry)。硏磨液是一種液體與很小的固體粒.子混合物，其 可在兩個距離甚小的固體之間造成一種類似潤滑的效果。此 外，上述機台更包括一個承遍、頭（carrier head)，其係在晶圓 移動（transfer)之後，利用真空（vacuum)技術將晶圓吸住，以 承載該晶圓。然而，特別注意的是，在進行化學機械硏磨製 程時，承載頭所承載的晶圓，與硏磨墊之間有根對運動，這 種相/對運動所造成的摩擦力有可能會把晶圓帶走。因此，有 些機台也會配有固定環（retaining ring)，以從晶圓側JS把晶 圓抓住（hold)。 請參閱第2圖，其所繪示爲習知的一種化學機械硏磨機 台部分元件剖面示意圖。習知機台的固定環402與硏磨墊40J ί Γ /0»^ ------------ ^--------t---------讀 (請先閱讀背面之注意事項再填寫本頁) 2 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 475216 A7 B7 五、發明說明（） 之間並沒有直接接觸，因此可以把晶圓406抓住（hold)。然 而，應注意的是，硏磨墊4卫4是具有遭性的，因此當承載頭 將晶圓处立下壓至硏磨垄」J)4時，硏磨墊_是會有點變形 的，尤其在靠近晶圓406邊緣的硏磨墊變形量較大。 請參閱第1圖，其所繪示爲習知的一種化學機械硏磨機 台部分元件剖面示意圖。該機台係利用一種氣_厪裝置3 06來 分別控制晶圓3ϋ與EL定環302，以使晶圓1中央與邊緣 附近的硏磨墊變形量if以均勻。然而，該機台的缺點之一， 在於其爲一種—單―二-輸入-單一-輸出（single-input-single-output)系統 。所謂 一種單一-輸入-車一-輸出系統 ，係指該系 統之氣壓裝置3 06僅用一種壓力來控制固定環302。換言之， 一種壓力參數的輸入，只會對應出一個0定環302所受實際 壓力參激的輸出。這種系統易台容、度（tolerance)有限 的緣故，造成固定環3立2各處所受來自氣壓裝置3 06的壓力 有不眉，而使晶圓_稍有偏斜。偏斜的遇_圓會使其邊緣各處之 硏磨裱果有_所差異。 此外，値得注意的是，即使虡所受來自氫壓裝 置之壓_力都相同，晶圓邊緣各處的硏磨結|仍然會有差異，。 這是因爲在進行硏磨的時候，硏磨墊是以線性的方式移動， 而晶圓卻是呈旋轉狀¥所致。在上述這種旋轉狀態下，晶圓 在硏磨墊移動線之左右兩側所受的硏磨力量也就不盡相同， 固定環所受來自晶圓的力量也隨之有所差異。因此’習知只 3 本紙張尺度適用中國國家標準（CNS)A4規格<210 x 29了公釐〉 (請先閱讀背面之注意事項再填寫本頁) 衣 ----訂---------線 經濟部智慧財產局員工消費合作社印製 475216 A7 ___ _B7__ 五、發明說明（） 用一種壓力作固定環控制的硏磨機台並不能解決這種受力不 。均的狀況。基於此，本發明主要針對提供一種用 於晶jj篆簏圓固定環的控制裝置，來克服傳統機台的缺 點。 發明槪述： 一 本發明揭示一種用於晶圓邊緣之晶圓固定環的控制裝 置，其特徵在於具有壓電材料之至少三個壓電裝置（Piezo)， 配置在化學機械硏磨設備之承_戴頭（carrier head)與晶圓固定 環（retaining ring)之間，用以控制晶圓區直潘之壓力。這種 控制裝置可說是一種jtl用多輸入多輸出（multi-input-multi-ontput ; ΜΙΜΟ)系統，可作較佳之固環壓力（retaining-ring-pressure)兮佈控制。 根據本發明鮫隹實施例，上述壓電裝.置可以是歉氍個屬 應舞（sensors)，用以感知晶圓固定環之壓力；亦可以是複數 個普1器（actuators)，用以使膨脹。此外，上 述Μ-裝置的數ϋ以使晶圓固定環各^眉表面切齊。 就另一角度而言，本發明可說是提供了一種化學機械硏 磨設備之配1零組件，其具有承麗JM (carrier head)、位於承 載頭之周邊之晶圓固定環（retaining ring)、以及位於晶圓固 定霞里i載頭之間’用以控制晶圓固定環之壓力之至少三個 4 本紙張尺度適用中國國家標準（CNS)A4規格<2.10 X 2:97公釐） (請先閱讀背面之注意事項再填寫本頁) 衮---- 訂----------線 經濟部智慧財產局員工消費合作社印製 475216 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 壓電裝置（piezo)。 本發明至少可以解決晶曙edge peeling) 的間題。此外，本發明可使晶1^定_環壓力（retaining ring pressure)更__均勻（uniform)。更_且，本發明對晶圓固定環之 損耗等具有補償作用（compensation)。 圖示的簡要說明： 第1圖繪示習知的一種化學機械硏磨機台部分元件剖面 不意圖 ； 第2圖繪示爲習知的一種化學機械硏磨機台部分元件剖 面示意圖； 第3圖繪示爲硏磨墊在靠近晶圓邊緣部分的變形曲面剖 面示意圖； 第4圖繪示固定環下降之後而與硏磨墊之間有所摩擦的 情形示意圖； 第5圖繪示將固定環底部與晶圓表面切齊之後，對晶圓 邊緣剝落的改善情形示意圖； 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） ------------案--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 475216 A7 B7__ 五、發明說明（） 第6·圖繪示根據本發明其中一實施例，一種壓電裝置的 剖面示意圖；以及 箏7圖繪不根據本發明較佳實施例，一種化學機械硏磨 設備之配套零組件的剖面與俯視示意圖。 圖號對照說明= ------------ ^--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 發明之詳細說明： 請參閱第3圖，其所繪示爲硏_磨墊在靠近晶圓遂緣部分 的變形_面剖面示意圖。由圖中可知，晶圓的邊緣歷受 6 100、308、406、506 ：晶圓 102、710 :壓電材料 104、3 02、402、5 10、610、718 :'固定環 106、404 :硏磨墊 108、716 :承載頭 306 ： 氣壓裝置 412 ： 間距 508 ： 硏磨墊受壓後之變形 712 ·· 頂座 714 ： 底座 720 ： 電線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 475216 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（） 到來自跟鹰壓力會較基盤分來得太（曲面5〇8)。這種 壓力對於晶圓^_表面上櫸較弱的低介電常數材料 (low K material)而g影響甚矩’甚至使得晶圓__51!6邊緣的膜 層下來（也就是剝落；Pjeling)。 因此，我們希望能將固定環510往下降，以使硏磨墊的 有效面積加大，或說以使上述變形的曲面5 0 8能往外 拉，藉此使I#曰圓」〇6邊緣附近的硏jgU寰形能與其他中央 部分的情开1_相類似。爲了下降固定環510，我們曾經在固定 環5 1 0與承_ft頭之間加工墊片，使固定環510底部約與晶圓 506表面切_齊。 1 請參閱第5圖，其所繪示將固ϋϋ與晶隱表面切齊 之後，對晶_圓邊緣剝落的改善J置形示意圖。其中，I,線 (BaSeline)i_長條所顯示的是一般情況下，晶圓邊緣剝落 的百分比。Rvl = 〇上的長條所顯示的是示將固定.環底部與晶 圓表面切齊之後，晶圓邊緣剝1的百分比。Rvl(Reveal)所定 義的是固定環底部與硏磨墊表面之間的間距412(第2圖）， Rvl = 0即表示固定環底部與晶圓表面切齊的情形。由第5圖 可知，雖然在切齊之後，剝落的情形或有改善，但差距甚大。 •—、 換言之，有時Rji=〇時，幾乎已剝落的情形，有時au吏 ¥=〇，剝落的I形依然存然已改善）。由jtt：_可知，硏 磨jlMi對於該^iUL12而言敏感度（sensitivity)非常高，也 就是說，一點點的匮距412差異可能造成迥然不同的硏磨效 -------------^--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） W216 經濟部智慧財產局員工消費合作社印製 A7 B7 $、發明說明（） 果。更精確地說，間距差1 mil(l(T3英吋），就會對剝落情形 的改善效果造成很大的影響（我們所使用的墊片厚度即約爲1 mil)。 由於上述蟄上1¾整技術不太卫^使該間距412値調得很 準（調至切齊），而1_當固定環610往下降之後可能會與硏磨 墊之間有^薄（如第4圖所示）。因此，我們希望 加入一種主動控制（active coairol)的機構。這種主制的 機構可以使在有磨損的時候自里往下推，且可作較精 準的調整使得固定環底部能準確地切齊晶圓表面。 此外，我們發現壓電材料可以實i見上述之主動控制的機 構。懕雷材料的特件之一，在於該JMJi料一旦被施以電壓 時，會稍微膨脹(expand)—點^點，因此可以^當作啓動器 (agtuator)。壓電材料J5另一個好處，在於其;ILil褢一個壓力 感應器，這個感應器在受JllJBJj時，會傳^應的電壓訊號 ---X ------、 (可作爲該壓力的回饋訊號），因此可以作器（sensor)。 就某一操仡而言，如果從回饋訊號知該壓霞材_料所受的 壓力並不足夠時，我們可以對該壓電材料施加__一點電壓，令 其膨脹以使固定環底部能gA圓表面切齊。 —----------------------- ' 一 請參閱第6圖，其所繪示爲根據本發明其中一實掘例， 一種壓電裝置的剖面示意圖。該裝置可包括一個頂」座712與 底座714，其中頂座712可將壓電材料Zi 0鎖在承載頭7 1 6 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公董） -------------^--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 475216 A7 -----— _JB7__ 五、發明說明（） 上’而底座7 1.4可將壓電材料7丨〇鎖在固定環7 1 8上。頂座 712與底座714分別以例如電線72 0等元件電性連接至控制 電路上。當壓電材料710受.到壓力時，兩條電線720之間會 產生雾位差，可作爲該壓力的回饋訊號。此外，當根據該回 饋訊號判知該壓力不足時，我們亦可透過該些電線72〇，對 該壓電材料7 1 0施加電壓，以使壓電材料7 1 〇稍微膨脹。 根據三點才能決定一個平面的數學原理，上述之壓電材 料至少需要三個，例如第7圖所繪示的四個壓電材料102。 然而’由於硏磨的結果對於間距而言敏感度非常高，因而對 間距調整之精密程度也相對要求也很高。因此，倘若壓電材 料的數量可以增加至例如四個、六個、八個甚至更多，對間 距調整的精密程度會更有幫助，也較不會發生晶圓傾斜等問 題。換句話說，相對於習知的機台而言，我們所建議的系統 是一種多-輸入-多-輸出（multi-input-multi-output)系統，其 可對固定環的多個位置作更仔細的間距調整。 請參閱第7圖，就另一觀點而言，本發明可說是提供了 一種化學機械硏磨設備之配套零組件，其具有承載頭（carrier head)108、位於承載頭108之周邊之晶圓固定環（retaining ring)104、以及位於晶圓固定環104與承載頭108之間，用 以控制晶圓固定環104之壓力的四個壓電裝置（piezo)102。 在進行晶圓1〇〇之化學機械硏磨製程時，該些元件都是位於 硏磨墊106之上。 9 本紙張尺度適用中國國家標準（CNS)A4規格mo X 297公釐） : ^--------^--------- (請先閱讀背面之注意事項再填寫本頁) 厶丄ο A7 B7 五、發明說明（） 本發明至少具有下列特點： 1 ·本發明可以改善晶圓逯Jt剝落（wafer edge peeling)的 , 問題。 2. 本發明可使晶圓固定環壓力（retaining ring pressure) 更爲均L勻（uniform)。 3. 本發明對晶圓固定星具有補償作用 (compensation) 〇 4. 本發明可利用具有壓電材料之啓噩器/感應器（piezo actuator/sensor)來主動[座_制固定環（retaining ring)之 壓力或主動控默硏磨墊與固定環之間距（wafer reveal) 〇 5 ·本發明具有多-輸入-多·輸出（multi-input-multi-output ; ΜΙΜΟ)之功能，可作較佳之固定環壓力 (retaining-ring-pressure)分佈_控制。 雖然本發明已以較佳實施例揭露如上，然其並非用以限 定本發明，任何熟習此技藝者，在不脫離本發明之精神和範 圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當 視後附之申請專利範圍所界定者爲準。 (請先閱讀背面之注意事項再填寫本頁) 裝 ----訂--------•線 經濟部智慧財產局員工消費合作社印製 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）A7 __B7__ V. Description of the invention () Background of the invention: (1) Scope of the invention The present invention relates to a semiconductor stalk manufacturing equipment, and in particular to a chemical mechanical honing cover processing equipment. (2) Prior art The chemical mechanical honing (CMP) machine is a process machine used to smooth the wafer production surface. The process machine contains at least components such as a polishing pad. During the chemical-mechanical honing process, the honing pad is filled with a slurry. Honing fluid is a mixture of liquid and small solid particles. It can create a lubricating effect between two solids with a very small distance. In addition, the above-mentioned machine further includes a carrier head, which is used to suck the wafer by vacuum technology after the wafer is transferred to carry the wafer. However, it is important to note that during the chemical mechanical honing process, there is a pair of movement between the wafer carried by the carrier head and the honing pad. The friction caused by this phase / pair movement may cause the The wafer is taken away. Therefore, some machines are also equipped with retaining rings to hold the wafer from the wafer side JS. Please refer to FIG. 2, which shows a schematic cross-sectional view of some components of a conventional chemical mechanical honing machine. Fixing ring 402 and honing pad 40J of conventional machine ί Γ / 0 »^ ------------ ^ -------- t --------- Read (Please read the precautions on the back before filling this page) 2 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 475216 A7 B7 5. There is no direct contact between the description of the invention () Therefore, the wafer 406 can be held. However, it should be noted that the honing pads 4 and 4 are susceptible, so when the carrier head presses the wafer down to the honing ridge "J) 4, the honing pads _ will be slightly deformed. In particular, the amount of deformation of the honing pad near the edge of the wafer 406 is large. Please refer to FIG. 1, which is a schematic cross-sectional view of some components of a conventional chemical mechanical honing machine. This machine system uses a gas 厪 device 3 06 to control the wafer 3ϋ and the EL ring 302 respectively so that the deformation amount if of the honing pad near the center and the edge of the wafer 1 is uniform. However, one of the disadvantages of this machine is that it is a single-input-single-output system. The so-called single-input-vehicle-output system means that the pneumatic device 306 of the system uses only one kind of pressure to control the fixed ring 302. In other words, an input of a pressure parameter will only correspond to the output of an actual pressure parameter to which the zero ring 302 is subjected. This kind of system is easy to accommodate and has limited tolerance. As a result, the pressure on the fixed ring 3 and 2 from the pneumatic device 3 06 is not eyebrows, and the wafer is slightly deflected. The oblique encounter will make the honing frame around the edges different. In addition, it should be noted that even if the pressure and force from the hydrogen pressure device are the same, there will still be differences in the honing knots around the wafer edge. This is because when honing, the honing pad moves linearly, but the wafer is rotated ¥. In the above-mentioned rotation state, the honing force of the wafer on the left and right sides of the honing pad moving line is different, and the force from the wafer by the retaining ring is also different. Therefore, 'Xi Zhi Zhi only 3 paper sizes are applicable to the Chinese National Standard (CNS) A4 specifications <210 x 29 mm> (Please read the precautions on the back before filling this page). Clothes-Order- ----- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 475216 A7 ___ _B7__ V. Description of the invention () A honing machine controlled by a fixed ring for pressure cannot solve this problem. Even situation. Based on this, the present invention is mainly directed to provide a control device for a crystal fixed ring to overcome the shortcomings of the traditional machine. Description of the invention: A control device for a wafer retaining ring for a wafer edge is disclosed in the present invention, which is characterized in that at least three piezoelectric devices (Piezo) with piezoelectric materials are arranged on the bearing of the chemical mechanical honing equipment. _ Between the carrier head and the retaining ring of the wafer, it is used to control the pressure of the wafer in the wafer area. This control device can be said to be a multi-input-multi-ontput (MIMO) system for jtl, which can be used for better retaining-ring-pressure cloth control. According to an embodiment of the present invention, the above-mentioned piezoelectric device may be a sensor for sensing the pressure of the wafer fixing ring; it may also be a plurality of actuators for Make it swell. In addition, the number of the M-devices described above is such that the respective eyebrow surfaces of the wafer retaining ring are aligned. From another perspective, the present invention can be said to provide a component 1 of a chemical mechanical honing equipment, which has a JM (carrier head) and a wafer retaining ring located around the carrier head. And at least three of the four paper sizes used to control the pressure of the wafer holding ring located between the wafer fixing Xia Li carrier heads. This paper size applies to China National Standard (CNS) A4 specifications < 2.10 X 2:97 mm) (Please read the notes on the back before filling out this page) 衮 ---- Order ---------- Printed by the Consumers 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economics 475216 Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economics System A7 B7 V. Description of the invention () Piezo devices. The present invention can at least solve the problem of edge peeling. In addition, the present invention can make the retaining ring pressure more uniform. Moreover, the present invention has a compensation function for the loss of the wafer fixing ring and the like. Brief description of the figure: FIG. 1 shows the cross-section of some components of a conventional chemical mechanical honing machine; FIG. 2 shows the schematic cross-section of some components of a conventional chemical mechanical honing machine; The figure shows a cross-sectional schematic diagram of the deformed curved surface of the honing pad near the edge of the wafer; FIG. 4 shows a schematic view of the friction between the honing pad and the honing pad after the fixing ring is lowered; FIG. 5 shows the fixing ring Schematic diagram of the improvement of the peeling of the wafer edge after the bottom is aligned with the wafer surface; 5 This paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm) ----------- -Case -------- Order --------- line (please read the precautions on the back before filling this page) 475216 A7 B7__ V. Description of the invention () Figure 6: Drawing basis One embodiment of the present invention is a schematic cross-sectional view of a piezoelectric device; and FIG. 7 is a schematic cross-sectional and plan view of a supporting component of a chemical mechanical honing equipment according to a preferred embodiment of the present invention. Drawing number comparison description = ------------ ^ -------- order --------- line (please read the precautions on the back before filling this page) Detailed description of the invention printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs: Please refer to Figure 3, which is a schematic diagram of the deformation of the __ grinding pad near the wafer edge. As can be seen from the figure, the edge of the wafer is subjected to 6 100, 308, 406, 506: wafer 102, 710: piezoelectric material 104, 3 02, 402, 5 10, 610, 718: 'fixed ring 106, 404: Honing pads 108, 716: Carrying head 306: Pneumatic device 412: Pitch 508: Deformation of the honing pad under pressure 712 ·· Top seat 714: Base 720: Electric wires The paper dimensions are applicable to China National Standard (CNS) A4 specifications ( (210 X 297 mm) 475216 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () To the pressure from the Eagle will be too much than the base plate (curved surface 508). This pressure has a momentary effect on the low-k material on the surface of the wafer ^ _, which has a weak dielectric constant (low K material), and even makes the film layer at the edge of the wafer __51! 6 down (that is, peeling; Pjeling) . Therefore, we hope that the fixing ring 510 can be lowered to increase the effective area of the honing pad, or that the deformed curved surface 508 can be pulled outward, so as to make the I # circle near the edge The 硏 jgU atlas can be similar to the emotions in other central parts. In order to lower the fixing ring 510, we have processed a gasket between the fixing ring 510 and the bearing head, so that the bottom of the fixing ring 510 is approximately cut to the surface of the wafer 506. 1 Please refer to FIG. 5, which shows a schematic diagram of improving the J-shape exfoliation of the crystal_circle edge after aligning the solid surface with the crystal hidden surface. Among them, I, line (BaSeline) i_ bar shows the percentage of wafer peeling in the general case. The bar at Rvl = 〇 shows the percentage of wafer peeling after fixing the ring. After aligning the bottom of the ring with the wafer surface. Rvl (Reveal) defines the distance 412 between the bottom of the retaining ring and the surface of the honing pad (Figure 2). Rvl = 0 means that the bottom of the retaining ring is aligned with the wafer surface. From Figure 5, it can be seen that although the peeling situation may be improved after being aligned, the gap is very large. • — In other words, sometimes when Rji = 〇, it is almost peeled, and sometimes au ¥ ¥ 〇, the peeling I-shape is still improved). From jtt: _, we can know that the sensitivity of the honing jlMi for this ^ iUL12 is very high, that is, a little gap 412 difference may cause a very different honing effect -------- ----- ^ -------- Order --------- Line (Please read the notes on the back before filling this page) 7 This paper size applies to China National Standard (CNS) A4 Specifications (210 X 297 mm) W216 A7 B7 $ printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the invention description (). To be more precise, if the pitch difference is 1 mil (l (T3 inches)), it will greatly affect the improvement of the peeling situation (the thickness of the gasket we use is about 1 mil). The whole technique is not very robust. ^ The pitch 412 値 is adjusted accurately (adjusted to the same), and 1_ when the fixed ring 610 is lowered, there may be a thin gap with the honing pad (as shown in Figure 4) ). Therefore, we hope to add an active coairol mechanism. This main mechanism can push down from the inside when there is wear, and can make more precise adjustments so that the bottom of the retaining ring can be accurately Cut the wafer surface in addition. In addition, we found that the piezoelectric material can realize the active control mechanism described above. One of the special features of the thunder material is that once the JMJi material is applied with a voltage, it will expand slightly. —Point ^, so ^ can be used as an agtuator. Another advantage of piezoelectric material J5 is that it; ILil 褢 a pressure sensor, this sensor will send ^ the corresponding voltage signal when receiving JllJBJj- --X ------, (can be used as a feedback signal for this pressure), because For a certain operation, if it is known from the feedback signal that the pressure on the material is not enough, we can apply a voltage of __ to the piezoelectric material to make it Expand so that the bottom of the retaining ring can be aligned with the round surface of gA. —----------------------- 'Please refer to Figure 6, which is shown as According to one practical example of the present invention, a schematic cross-sectional view of a piezoelectric device. The device may include a top base 712 and a base 714, where the top base 712 can lock the piezoelectric material Zi 0 to the bearing head 7 1 6 8 Paper size applies to China National Standard (CNS) A4 specifications (210 X 297 public directors) ------------- ^ -------- Order --------- (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 475216 A7 -----— _JB7__ V. Description of the invention () on the '7 and the base 7 1.4 can be piezoelectric materials 7 丨 〇 is locked on the fixed ring 7 1 8. The top seat 712 and the base 714 are electrically connected to the control circuit with components such as a wire 72 0. When the piezoelectric material 710 receives pressure, the two wires 720 Fog difference It can be used as a feedback signal for the pressure. In addition, when it is determined that the pressure is insufficient according to the feedback signal, we can also apply voltage to the piezoelectric material 7 1 through the wires 72 to make the piezoelectric material 7 1 〇Slight expansion. According to the mathematical principle of three points to determine a plane, the above piezoelectric materials need at least three, such as the four piezoelectric materials 102 shown in Figure 7. However, because of the result of honing for the spacing, The sensitivity of speech is very high, so the precision of the pitch adjustment is relatively high. Therefore, if the number of piezoelectric materials can be increased to, for example, four, six, eight or even more, the precision of the pitch adjustment will be more helpful, and problems such as wafer tilt will not occur. In other words, compared to the conventional machine, our proposed system is a multi-input-multi-output system, which can modify multiple positions of the fixed ring Careful spacing adjustment. Referring to FIG. 7, in another aspect, the present invention can be said to provide a supporting component of a chemical mechanical honing equipment, which has a carrier head 108 and a wafer located around the carrier head 108. A retaining ring 104 and four piezoelectric devices 102 located between the wafer fixing ring 104 and the carrier head 108 and used to control the pressure of the wafer fixing ring 104. During the CMP process of wafer 100, these components are located on the honing pad 106. 9 This paper size is applicable to China National Standard (CNS) A4 specification mo X 297 mm): ^ -------- ^ --------- (Please read the precautions on the back before filling in this (Page) 7ο A7 B7 V. Description of the invention () The invention has at least the following features: 1. The invention can improve the problem of wafer edge peeling (wafer edge peeling). 2. The present invention can make the retaining ring pressure of the wafer more uniform. 3. The present invention has a compensation effect on the wafer fixed star. 〇4. The present invention can use a piezo actuator / sensor with a piezoelectric material to actively [retaining ring ) Pressure or active reveal the distance between the polishing pad and the fixed ring (wafer reveal) 〇5 The present invention has a multi-input-multi-output (multi-input-multi-output; MIMO) function, can be better Retaining-ring-pressure distribution_control. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be determined by the scope of the attached patent application. (Please read the precautions on the back before filling out this page) Binding ---- Order -------- • Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economics 10 This paper size applies to Chinese National Standards (CNS) A4 size (210 X 297 mm)