474999 A7 B7 五、發明說明（/ ) [發明之詳細說明] [發明所屬之技術領域] 本發明係關於一種由A1合金燒結體構成之濺鍍靶，該 濺鍍靶所形成之膜（層）將具有優異之均一性，其特別適用 在製作光碟反射膜(層)上。 [習知技術] 近年來，不需要磁頭之可記錄·再生之高密度記錄光 碟技術不斷地被開發，很快地成爲受到矚目的焦點。雖然 此種光碟有再生專用型、可寫入一次型、可重複讀寫型等 種類，但都是利用到A1(合金）反射膜。以下針對採用當中 之可寫入一次型、可重複讀寫型所使用之相變化方式的記 錄•再生原理簡單說明之。 相變化光碟，係對於基板上之記錄薄膜藉由雷射光之 照射而使其加熱昇溫，而使該記錄薄膜的構造發生結晶學 上的相變化（無定形結晶）以進行資料的記錄•再生。接 著檢測出起因於其相間之光學常數的變化所造成之反射率 的變化，以進行資料的再生。 上述相變化係藉由照射直徑大小縮聚成1〜數//m左右 之雷射光來進行。此時，例如若l//m之雷射光束以10 m/s 的光線速度通過，又於光碟上之某個點受到雷射光照射的 時間爲100ns，則於此時間內必須進行上述相變化及反射率 的檢測。 又，在達成上述結晶學上的相變化(亦即無定形與結晶 之相變化)的同時，反覆施加之熔融與急速冷卻不僅對光碟 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4Φ (請先閱讀背面之注意事項再填寫本頁) 訂---------#.· 經濟部智慧財產局員工消費合作社印製 474999 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（>) 之相變化記錄層、亦會對周邊之介電保護層或A1(合金)反 射膜造成影響。也因此，特別是像A1此種金屬必須考慮到 由於反覆地昇溫•冷卻所導致的熱應力或經長時間的變化 〇 如此之相變化光碟係如圖1所不般，使得Ge-Sb — Te 系等之記錄薄膜層4的兩側被夾在ZnS«SK)2系之高熔點 介電保護層3、5之中間，又再設置一 A1合金反射膜6， 而成爲具備四層構造之物。 當中，對於反射層6與保護層3、5係要求在光學性能 上其無定形部及結晶部之反射率的差要大，而對於記錄薄 膜4則要求其耐濕性及防止因熱變形的性能，再進一步則 要求其於進行記錄之時對熱條件的控制的性能。 如此般，A1合金反射膜6必須具有做爲精細之反射體 的性能以及如上述之爲可耐熱等應力之強韌物。 又，圖1中符號1係表示雷射光入射方向，符號2表 示聚碳酸酯等基板，符號7爲上被覆層，符號8則表示黏 著層。 上述之A1合金反射膜通常係以濺鍍法形成。此濺鍍法 之原理係將正電極與構成負電極之靶彼此對向，而在鈍性 氣體之周圍氣氛下於該等基板及靶之間施加高電壓以產生 電場，此時電離化之電子與鈍性氣體彼此撞擊而形成電漿 ，此電漿中之陽離子將撞擊靶（負電極）表面而將靶構成原 子打出，又此飛出的原子會附著於對向之基板表面，於是 便形成濺鍍膜。 4 •-----------Aw.-------訂·--------—Awn (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 474999 A7 B7 五、發明說明（刁） 形成上述靶之A1合金係將A1 - Ti合金熔解成爲錠塊 之後，藉由軋製及锻造等而加工成平板狀之靶。以往使用 此種成型之靶進行濺鍍以形成A1合金反射膜，對於在當時 要求性能並不特別嚴格之階段而言是沒什麼問題，但在對 性能之要求逐漸嚴格的今日即使是此等靶之製作階段亦要 求著性能的提昇。 若就藉由濺鍍被覆之A1合金反射膜其性能的良窳進行 觀察，則可發現反射膜的性能和該膜的均一性有關，且該 膜的均一性係取決於濺鍍靶，然而以往並未尋求出更佳的 解決方法。 [發明所欲解決之課題] 是以，本發明之目的在於獲致一種光碟反射膜形成用 濺鍍靶，其乃針對A1合金靶之製程進行根本上的改良，藉 由改善A1 - Ή合金靶之組織來使得以濺鍍方式形成之A1 合金反射膜(層)具有良好之均一性，以改善A1合金反射膜 所具備之光學上的性能。 本發明乃基於此實際觀察所得之結果，而提供有： 1. 一種由A1合金燒結體構成之光碟反射膜形成用濺鍍 靶，其特徵爲結晶粒徑在30//m以下。 2. 如上述1.記載之光碟反射膜形成用濺鍍靶，係含有 Τι 0.1 〜0.5 at%之 A1—Τι 合金。 3. 如上述1.或2.記載之光碟反射膜形成用濺鍍靶，係 利用HIP(hot isostatic pressing)或熱壓法以抑制粒子成長。 [發明之實施形態] 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------ΦΦ Γ 清先閱讀背面之注意事項再填寫本頁) 訂---------##. 經濟部智慧財產局員工消費合作社印製 474999 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（y) 以往使用之方法(熔製法），係藉由將A1 - Ti合金熔解 鑄造來製作錠塊，再將其藉由鍛造·軋製等加工以形成平 板狀之靶；此爲最爲簡便之方法，且基於製造成本之現實 的考量，除了此法實在找不到更好的方法。 然而，依此種熔製法所製造之濺鑛靶之結晶粒徑係在 50//m以上。再者，若採用A1 - Ti合金之熔製法結果將形 成有針狀之粗大的AhTi相。現已知此種粗大化之結晶會 增加濺鍍時反射膜的不均一性。 因此，本發明不採用習知之熔製法而改以使用被認爲 在製造A1 - Τι合金靶上沒有效率的(不利)的粉末燒結，以 一舉解決上述之問題，使得靶內之結晶粒徑抑制在30//m 以下，且可防止或減低針狀之粗大的Α13Ή相(金屬間化合 物相)的形成，從而獲致本發明之靶。 根據上述所獲得之Α1 - Ή合金燒結體靶，若使用其進 行濺鑛來形成反射膜，則可發現該反射膜之均一性得到顯 著的改善，而得到適宜之光碟用反射膜。 在此，本發明所指之「Α1 - Ή合金燒結體靶」，乃如 後面所提到的將Α1粉末及Τι粉末混合得到之均勻混合粉 末藉由熱壓或是HIP等予以燒結所得到之燒結體，即使於 燒結體內部有未完全合金化之部份，亦將其當作此A1 - Ti 合金燒結體的一部份。亦即，此處所稱之A1 - Ti合金燒結 體靶係非熔解法(熔製法)而製作之物。 使用之粉末分別爲高純度之25//m〜20//m大小之均一 細微之A1粉末及Τι粉末。將A1粉末及Ti粉末充分攪拌 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ^1 ^1 ί· 1 ϋ ϋ · ·ϋ ϋ 1 ·1 i·— ϋ ϋ ϋ ϋ I n 1_1 I (請先閱讀背面之注意事項再填寫本頁) 474999 A7 B7 經濟部智慧財產局員工消費合作社印製474999 A7 B7 V. Description of the invention (/) [Detailed description of the invention] [Technical field to which the invention belongs] The present invention relates to a sputtering target composed of an A1 alloy sintered body, and the film (layer) formed by the sputtering target Will have excellent uniformity, which is particularly suitable for making reflective films (layers) for optical discs. [Known Technology] In recent years, high-density recording optical disc technology that can record and reproduce without a magnetic head has been continuously developed, and it has quickly become the focus of attention. Although such optical discs are of a reproduction-only type, a write-once type, and a rewritable type, they all use an A1 (alloy) reflective film. The following is a brief description of the recording / reproducing principle of the phase change method used in the write-once type and the rewritable type. A phase change disc is a recording film on a substrate that is heated by heating with laser light, and the structure of the recording film undergoes a crystallographic phase change (amorphous crystal) to record and reproduce data. Then, a change in the reflectance caused by a change in the optical constant between the phases is detected to reproduce the data. The phase change described above is performed by irradiating laser light having a diameter of about 1 to several digits / m. At this time, for example, if a laser beam of l // m passes at a light speed of 10 m / s, and the time at which a laser beam is irradiated at a certain point on the disc is 100 ns, the phase change must be performed within this time. And reflectance detection. In addition, while achieving the above crystallographic phase change (that is, the phase change between amorphous and crystalline), the repeated application of melting and rapid cooling not only applies to the optical disc 3 paper standard of China National Standard (CNS) A4 (210 X 297 mm) 4Φ (Please read the notes on the back before filling in this page) Order --------- #. · Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 474999 Employee Consumption of the Intellectual Property Bureau of the Ministry of Economic Affairs Cooperative printed A7 B7 5. The phase change recording layer of the invention description (>) will also affect the surrounding dielectric protective layer or A1 (alloy) reflective film. Therefore, especially for metals such as A1, it is necessary to consider the thermal stress caused by repeated heating and cooling or changes over a long period of time. Such a phase change is not as shown in Figure 1, which makes Ge-Sb — Te Both sides of the recording film layer 4 are sandwiched between ZnS «SK) 2 high-melting-point dielectric protection layers 3 and 5, and an A1 alloy reflective film 6 is provided to form a four-layer structure. . Among them, the reflective layer 6 and the protective layers 3 and 5 are required to have a large difference in reflectance between the amorphous portion and the crystalline portion in optical performance, and the recording film 4 is required to have moisture resistance and prevent thermal deformation. Performance, and further requires the performance of the control of thermal conditions at the time of recording. As such, the A1 alloy reflective film 6 must have the properties of a fine reflector and a tough material that can withstand stresses such as heat resistance as described above. In Fig. 1, reference numeral 1 indicates a laser light incident direction, reference numeral 2 indicates a substrate such as polycarbonate, reference numeral 7 indicates an upper coating layer, and reference numeral 8 indicates an adhesive layer. The above-mentioned A1 alloy reflective film is usually formed by a sputtering method. The principle of this sputtering method is that the positive electrode and the target constituting the negative electrode are opposed to each other, and a high voltage is applied between the substrate and the target to generate an electric field in the surrounding atmosphere of a passive gas. At this time, the ionized electrons It collides with inert gas to form a plasma. The cations in this plasma will hit the surface of the target (negative electrode) and knock out the target constituent atoms, and the flying atoms will adhere to the surface of the opposing substrate. Splash coating. 4 • ----------- Aw .------- Order · --------— Awn (Please read the precautions on the back before filling this page) This paper size Applicable to China National Standard (CNS) A4 (210 X 297 mm) 474999 A7 B7 V. Description of the invention (Diao) The A1 alloy forming the above target is melted into an ingot by A1-Ti alloy, and then rolled and forged. Wait for processing into a flat target. In the past, the use of such a shaped target for sputtering to form an A1 alloy reflective film was not a problem at a stage where the performance requirements were not particularly strict at the time, but today, even with these targets, the performance requirements are becoming more stringent. The production phase also requires performance improvements. If the performance of the A1 alloy reflective film coated by sputtering is observed, it can be found that the performance of the reflective film is related to the uniformity of the film, and the uniformity of the film depends on the sputtering target. However, in the past, No better solution was sought. [Problems to be Solved by the Invention] Therefore, the object of the present invention is to obtain a sputtering target for forming a reflective film for an optical disc, which is a fundamental improvement for the process of A1 alloy target, and improves the A1-scandium alloy target. The structure is used to make the A1 alloy reflective film (layer) formed by sputtering have good uniformity, so as to improve the optical performance of the A1 alloy reflective film. The present invention is based on the results obtained from this actual observation, and provides: 1. A sputtering target for forming a reflective film for an optical disc made of an A1 alloy sintered body, which is characterized by a crystal grain size of 30 // m or less. 2. The sputtering target for forming a reflective film for an optical disc as described in 1. above, which contains an Al-Ti alloy of Ti 0.1 to 0.5 at%. 3. The sputtering target for forming a reflective film for a disc as described in 1. or 2. above, uses HIP (hot isostatic pressing) or hot pressing to suppress particle growth. [Implementation form of the invention] 5 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----------- ΦΦ Γ Please read the precautions on the back before filling in this page ) Order --------- ##. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 474999 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (y) The method used in the past (melting Manufacturing method) is to make ingots by melting and casting A1-Ti alloy, and then processing them by forging and rolling to form flat targets; this is the simplest method and is based on the reality of manufacturing costs Except for this method, there is no better way to find it. However, the crystal grain size of the sputter target produced by this melting method is 50 // m or more. Furthermore, if the melting method of the A1-Ti alloy is used, a needle-like coarse AhTi phase will be formed. It is known that such coarsened crystals increase the non-uniformity of the reflective film during sputtering. Therefore, the present invention adopts a conventional melting method instead of using a conventional (unfavorable) powder sintering which is considered to be inefficient in the manufacture of A1-Ti alloy targets, so as to solve the above-mentioned problems in one fell swoop and suppress the crystal grain size in the target Below 30 // m, the formation of needle-like coarse A13 针 phase (intermetallic compound phase) can be prevented or reduced, thereby achieving the target of the present invention. According to the A1-scandium alloy sintered body target obtained as described above, if a reflective film is formed by sputtering the target, it is found that the uniformity of the reflective film is significantly improved, and a suitable reflective film for an optical disc is obtained. Here, the "A1-samarium alloy sintered body target" referred to in the present invention is a uniformly mixed powder obtained by mixing A1 powder and Ti powder as mentioned later and obtained by sintering by hot pressing or HIP. The sintered body is regarded as a part of the A1-Ti alloy sintered body even if there is a part that is not fully alloyed inside the sintered body. That is, the A1-Ti alloy sintered body target referred to herein is a product produced by a non-melting method (melting method). The powders used are high-purity, uniform, fine A1 powder and Ti powder with a size of 25 // m to 20 // m. Fully stir A1 powder and Ti powder ϋ I n 1_1 I (Please read the precautions on the back before filling out this page) 474999 A7 B7 Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs
8 B 1 19 5 1 B 五、發明說明（i) 混合，接著經過預備成型，之後，以熱壓法或HIP法(依必 要性可先進行CIP之後接著進行HIP)進行燒結使靶成型。 以此所得到的A1 - Ti合金靶，由於係以A1粉末及Τι 粉末爲起始材料，故不會如同以熔製法所獲得之物其形成 有粗大化之結晶粒或是針狀之粗大的AhTi相(金屬間化合 物相）。 藉此，可獲得良好之反射膜形成用A1 - Ti合金靶。 含有Ti 0.1〜5 at%之理由，乃在於使得反射膜具備充分 之光學上性能以及耐濕性及防止因熱變形的性能，以及可 耐得住因反覆地昇溫•冷卻所導致的熱應力或經長時間產 生的變化。 又，將結晶粒徑限定在30//m以下的理由，乃爲了確 保以濺鑛形成之反射膜的均一性。 [實施例與比較例] 以下，根據實施例與比較例加以說明。又，本實施例 僅爲其中一個例子，故不因爲此例子而使得本發明有所受 限。亦即，本發明僅受到申請專利範圍內容之限制，至於 實施例以外之各種變形例亦包含於本發明之中。 (實施例） 將平均粒徑25/zm之A1粉末與平均粒徑20//m之Ti 1.5wt%粉末彼此混合，於Ar周圍氣氛之條件下，以溫度 550°C、壓力150 Kgf/cm2，將最高溫度保持時間定爲4小時 以內來進行熱壓。所得到之靶其密度爲2.7 g/cm3。 對以此獲得之A1 - Ti合金靶燒結體進行顯微鏡組織観 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)8 B 1 19 5 1 B 5. Description of the invention (i) Mixing, followed by preliminary molding, and then sintering to shape the target by hot pressing or HIP (if necessary, CIP followed by HIP). The A1-Ti alloy target obtained in this way uses A1 powder and Ti powder as starting materials, so it does not form coarse crystal grains or needle-like coarse particles like those obtained by melting. AhTi phase (intermetallic compound phase). Thereby, a good A1-Ti alloy target for forming a reflective film can be obtained. The reason for containing Ti at 0.1 to 5 at% is to provide the reflective film with sufficient optical properties, moisture resistance, and performance to prevent thermal deformation, and to withstand thermal stress caused by repeated heating and cooling or Changes that occur over time. The reason why the crystal grain size is limited to 30 // m or less is to ensure the uniformity of the reflective film formed by sputtering. [Examples and Comparative Examples] Hereinafter, examples and comparative examples will be described. In addition, this embodiment is only one example, so the present invention is not limited by this example. That is, the present invention is limited only by the scope of the patent application, and various modifications other than the embodiments are also included in the present invention. (Example) A1 powder having an average particle diameter of 25 / zm and Ti 1.5wt% powder having an average particle diameter of 20 // m were mixed with each other, under the conditions of an atmosphere around Ar, at a temperature of 550 ° C and a pressure of 150 Kgf / cm2 , Set the maximum temperature holding time to within 4 hours for hot pressing. The obtained target had a density of 2.7 g / cm3. Microstructure of the sintered body of A1-Ti alloy target thus obtained 観 7 This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)
474999474999
補充I_B7 __ 五、發明説明（L ) 察，結果將觀察到如圖2〜圖4般之均一結晶粒的組織。圖 2係A1 — Ti合金靶燒結體之全體的顯微鏡組織相片(SEM相 片），圖3所示係A1部位之顯微鏡組織相片(SEM相片），圖 4所示係Ti部位之顯微鏡組織相片(SEM相片）。再者，圖 10係顯示A1 - Ti合金靶燒結體之光學顯微鏡相片。由該圖 中之尺寸可輕易地得知，A1 — Ti合金靶燒結體之結晶粒徑 在30^m以下。 如上所述，本實施例之A1 - Ti合金靶燒結體，其結晶 粒細微，且未觀察到粗大化之金屬間化合物。 又，使用此A1 - Ti合金靶進行2小時之濺鍍，就濺鍍 面之組織進行觀察，結果觀察到如圖8所示般之平滑(平均 粗度1.5//m)且細微組織的腐蝕面。 再者使用此A1 -Ti合金靶於基板上形成A1 -Ti合金 膜，結果於4 120mm之基板上可形成膜厚均一性在土2%之 均一性優良之濺鍍膜。本實施例雖使用熱壓法來製作該膜 ，但藉由HIP亦可得到具有良好性質之A1 - Ti合金靶。 (比較例） 經濟部智慧財產局員工消費合作社印製 其次，將含有Ti 2at%之Al—Ti合金於1200°C進行熔 製以製作錠塊。將此錠塊削切成既定厚度，再進行冷軋而 成爲A1 — Ti合金耙。 對藉由熔製法獲得之A1 - Ti合金靶進行顯微鏡組織觀 察，結果可觀察到如圖5〜圖7所示之粗大的AhTi相(金屬 間化合物相)之組織。圖5係A1 -Ti合金靶之全體之顯微 鏡組織相片(SEM相片），圖6所示係A1部位之顯微鏡組織 8 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 474999 I 90^2·#、'，」 i .，:適 B； 五、發明説明（")） 相片(SEM相片），圖7所示係Ti部位之顯微鏡組織相片 (SEM相片）。 又，使用此A1 — Ti合金靶進行2小時之濺鍍，就其 濺鏟面之組織進行觀察，結果觀察到如圖9所示般之非平 滑(表面粗度4.5//m)且反映出全面上之結晶相的針狀腐蝕 面。 再者使用此Al-Ti合金靶於基板上形成A1 -Ti合金 膜，結果於0120mm之基板上形成膜厚均一性在±5%之均 一性不佳之濺鍍膜。 [發明之效果] 若使用本發明之結晶粒徑在30//m以下之A1合金燒 結體靶來進行濺鍍，則所形成之反射膜，其具備有充分適 用於光碟用反射膜之光學上的性能、耐濕性及防止因熱變 形的性能，以及可耐得住因反覆地昇溫•冷卻所導致的熱 應力或經長時間產生的變化。 經濟部智慧財產局員工消費合作社印製 又，本發明之明顯的特徵在於，相較於以往之藉由熔 製法而使用A1 -Ti合金靶進行濺鍍所得之物’本發明所得 之反射膜其均一性優異，並可穩定、高再現性地製造出品 質優良的膜。 [圖示之簡單說明] 圖1係記錄薄膜層構造之剖面說明圖。 圖2係實施例之A1 -Ti合金靶燒結體之顯微鏡組織相 片(SEM照片）。 圖3係實施例之A1 -Ti合金耙燒結體之A1部位之顯 9 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X 297公釐） 474999Supplement I_B7 __ 5. Description of the Invention (L) As a result, a uniform crystal grain structure as shown in FIG. 2 to FIG. 4 will be observed. Fig. 2 is a microscope photograph (SEM photograph) of the entire A1-Ti alloy target sintered body, Fig. 3 is a microscope photograph (SEM photograph) of the A1 site, and Fig. 4 is a microscope photograph (SEM) of the Ti site photo). In addition, FIG. 10 shows an optical microscope photograph of a sintered body of an Al-Ti alloy target. It can be easily known from the size in the figure that the crystal grain size of the sintered body of the A1-Ti alloy target is 30 m or less. As described above, the sintered body of the Al-Ti alloy target of this example has fine crystal grains, and no coarsened intermetallic compound is observed. In addition, sputtering was performed for 2 hours using this Al-Ti alloy target, and the structure of the sputtered surface was observed. As a result, smooth (average thickness 1.5 // m) and fine structure corrosion as shown in FIG. 8 were observed. surface. Furthermore, using this A1 -Ti alloy target to form an A1 -Ti alloy film on a substrate, as a result, a sputter film having a uniform film thickness of 2% and a uniformity of 4% on a substrate of 120 mm can be formed. Although the film is produced by the hot pressing method in this embodiment, an Al-Ti alloy target with good properties can also be obtained by HIP. (Comparative example) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Next, an Al-Ti alloy containing Ti 2at% was melted at 1200 ° C to make ingots. This ingot was cut to a predetermined thickness, and then cold rolled to form an A1-Ti alloy harrow. Microscopic observation of the Al-Ti alloy target obtained by the melting method revealed that a coarse AhTi phase (intermetallic compound phase) structure as shown in Figs. 5 to 7 was observed. Figure 5 is a microscope photo (SEM photo) of the entire A1 -Ti alloy target, and Figure 6 is a microscope structure of the A1 part. 8 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 474999 I 90 ^ 2 · #, ', "i.,: B; V. (Explanation of the invention) (SEM picture), as shown in Figure 7 is a microstructure photo (SEM picture) of the Ti part. Furthermore, using this Al—Ti alloy target for 2 hours of sputtering, the structure of the shovel surface was observed. As a result, a non-smooth surface (surface roughness of 4.5 // m) as shown in FIG. 9 was observed and reflected. Needle-shaped corroded surface of crystalline phase. Furthermore, an Al-Ti alloy film was formed on the substrate by using this Al-Ti alloy target. As a result, a sputter film having a uniform film thickness of ± 5% was formed on a substrate having a thickness of 0120 mm. [Effects of the Invention] If an A1 alloy sintered body target having a crystal grain size of 30 // m or less is used for sputtering, the formed reflective film is provided with an optical film that is sufficiently suitable for a reflective film for optical discs. Performance, moisture resistance, and resistance to thermal deformation, and can withstand thermal stress caused by repeated heating and cooling or changes over time. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the present invention has a distinctive feature that, compared with the conventional sputtering method using an A1-Ti alloy target by a melting method, the reflective film obtained by the present invention is It is excellent in uniformity, and it is possible to produce a high-quality film stably and with high reproducibility. [Brief description of the figure] Fig. 1 is a cross-sectional explanatory view of the structure of a recording film layer. Fig. 2 is a microstructure photograph (SEM photograph) of an sintered body of an Al-Ti alloy target according to an example. Figure 3 shows the A1 part of the sintered body of the A1-Ti alloy harrow according to the embodiment. 9 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 mm) 474999.
五、發明説明（t) 微鏡組織相片(SEM照片）。 圖4係實施例之A1 一 Ti合金靶燒結體之Ti部位之顯 微鏡組織相片(SEM照片）。 圖5係比較例之熔製A1 -Ti合金靶之顯微鏡組織相片 (SEM照片）。 圖6係比較例之熔製A1-Ti合金靶之A1部位之顯微 鏡組織相片(SEM照片）。 圖7係比較例之熔製A1 -Ti合金靶之Ti部位之顯微 鏡組織相片(SEM照片）。 圖8係實施例之經過濺鍍而於A1 -Ti合金燒結體靶形 成濺蝕面之組織相片。 圖9係比較例之經過濺鍍而於熔製A1 - Ti合金靶形成 濺鈾面之組織相片。 經濟部智慧財產局員工消費合作社印製 [符號說明] 1 2 3 4 5 6 7 8 雷射光入射方向 聚碳酸酯等之基板 ZnS · Si〇2等之介電保護層 Se*Sb*Te等之相變化記錄層 ZnS · SiCb等之介電保護層 A1合金反射層 上被覆層 黏著層 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X 297公釐）V. Description of the invention (t) Microscopic micrograph (SEM photo). Fig. 4 is a microscopic micrograph (SEM photograph) of a Ti portion of an A1-Ti alloy target sintered body of an example. Fig. 5 is a microstructure photograph (SEM photograph) of a molten Al-Ti alloy target of a comparative example. Fig. 6 is a photomicrograph (SEM photograph) of the A1 portion of the molten A1-Ti alloy target of the comparative example. Fig. 7 is a microstructure photograph (SEM photograph) of a Ti portion of a molten Al-Ti alloy target of a comparative example. Fig. 8 is a photograph of the structure of a sputtered surface formed on an A1-Ti alloy sintered body target by sputtering in the embodiment. Fig. 9 is a microstructure photograph of a uranium-spattered surface formed on a molten A1-Ti alloy target by sputtering in a comparative example. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs [Description of Symbols] 1 2 3 4 5 6 7 8 Dielectric protective layer of substrates such as polycarbonate ZnS · Si〇2 such as laser light incident direction Se * Sb * Te etc. Phase change recording layer ZnS · SiCb, etc. Dielectric protective layer A1 Alloy reflective layer Cover layer Adhesive layer This paper size is applicable to China National Standard (CNS) A4 specification (21 × 297 mm)