472087 A7 五、發明說明（ _5-1發明頜域.： (請先閱讀背面之注意事$再填寫本頁) 本發明係有關於一稀Φ Λ ®半導體製程，特別是一種在沉 積硼磷矽玻璃（B P S G)後，於，丄 防止在硼磷矽玻璃（BPSG)於高 溫製程中產生氣泡缺陷之方法。 g-2發明背景： 隨著半導體工業進步5 木地少主超大型積體電路（ULSI)，為了 在積體電路的設計上符合离〜 阿祗度乏需求，各種元件的尺寸 往往縮小至次微米以下， 並且隨著元件持續的縮小，導致 進行操作時所施加之電愚乃丄+ _ 私&及功率亦大幅縮減，因此，對各 種元件而言，其進行摄作咕a 果1F時所能允許之容忍缺陷及誤差程 度亦大幅降低。 在現今積體電路製程裏所使用之沉積式介電材料 (dielectric)中’由於化學氣相沉積（chem丨ca| vap〇r Deposition,CVD)具有較佳的階梯覆蓋⑷㊀卩c〇verage)能 經濟部智慧財產局員工消費合作社印製 力，使其在半導體製程上扮演著重要的角色。而因為一般 的介電材料裏都含有矽之成分，若以矽的反應氣體來源做 區分’尚可分成以甲矽燒（SiH4>為主及含有矽與氧的有機 砍化物（T EOS〉為主之兩種不同的cvd介電材料沉積方 式0 -2- ‘紙張尺度適用中國國家標準（CNS)A4規格（210 κ 297公釐） 472087 A7 B7 五、發明說明（ 常見的介電材料有二氧化矽（Si〇2〉，氮化矽（Sj3N4)， 磷矽玻璃（PSG)和硼磷矽玻璃（BPSG)等等，而硼磷矽二璃 為一種常用於金屬製程之前的隔離介電材料，藉著對 進行高溫的熱流（thermal flow)，可增加其平坦性，並降 低BPSG薄膜受晶片表面之影響，因此，BpSG薄膜乃廣 泛的應用在尚未進行金屬製程前的表面平坦化介電材料 上0 侧嶙梦玻璃通常利用化學氣相沉積法（Chemjca| Vapor Deposition，CVD)來形成，其可利用TE〇s及含硼 和含磷的有機化合物τΜΒ與TMP來做為BPSG的製程氣 體，同時為了使反應能在較低的溫度下進行，通常會加入 臭氧（〇3)參與反應，而ΤΜΒ，TMP，和TEOS三者在室溫 常壓下均為液態，因此均需對這些化合物加熱以增加其飽 合蒸氣壓’或是通入載氣（carrier gas)用以提升液態反應 物之氣體分壓（partial pressure)。 經濟部智慧財產局員工消費合作社印製 ------ -裝-------訂， f靖先閱讀背面之注意事承再填寫本頁) 參考第一圖所示，顯示一化學氣相沉積製程機台之液 體注入活塞（liquid injection valve)10，其中加熱器12用 於將氣體管線保持高溫，反應液體源1 4經由液體管線1 6 輸送至液體注入活塞，藉由通入載氣1 8 .，將氣化之液態 反應物攜帶至製程室20，其優點為可控制載氣及液態反 應物之流量，然而活塞内孔徑細小，而液體管線至製程室 之間至少含有三個活塞，當沉積製程結束後，液態反應物 本紙張尺度過用中國國家標準（CNS〉A4規格（21〇 x 297公釐〉 472087 A7 B7 五、發明說明（) 易殘留於這些活塞中’造成下次沉積之硼、鱗濃度不穩定， 尤其當硼磷濃度含量較高時，將嚴重影響沉積硼磷矽玻璃 之品質。 第一圖中.所示為習知技術中沉積之删磷矽玻璃經高溫 熱流後之截面結構圖。其中基材22之上已形成複數個半 導體元件結構24，並形成一介電層（未標示出來）於基材及 元件上而作為隔離之用，然後在金屬化製程之前，為了將 基材平坦化，乃以TE0S/03，TMB，TMPO為反應氣體， 進行APCVD之BPSG沉積反應而形成了所謂的bpte〇S 薄膜層2 6。較薄的介電層主要的作用係為b p T E〇S薄膜 層26之中間層，由於其不含有磚或硼原子，因此不會和 元件之源極（汲極）反應而影響記憶體之電性。 如上所述的，為了增加B P S G之平坦性，必需在大 約850〜90CTC時進行熱流（flow)，而如第二圖中所示的， 傳統之Β Ρ Τ Ε Ο S薄膜層2 6由於硼磷含量不穩定，因此很 容易形成氣泡缺陷28，尤其沉積高濃度硼磷矽玻璃時， 此情況更形嚴重。製程中若發生此類缺陷不但影響到產品 之良率，更使後續製程及產能受到波及，因此極需要一種 解決方法以避免此現象之發生。 硼磷矽玻璃（BPSG)因含磷而對空氣中水氣之吸收能 力甚佳，若磷含量過高則經高溫製程之後，易有氣泡缺陷 -4 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） — —;,丨||丨--- - I · I I (請先閱讀背面之注意事填再填寫本頁) _ 經濟部智慧財產局員工消費合作社印製 472087 A7 B7 五、發明說明（ 產生於棚磷矽玻璃，若硼含量過高則易有結晶析出。為了 有效提高硼磷矽破璃之流動性以提高平坦化效果，需大幅 提高熱流（therma丨f|0w)之溫度，但是常常因為溫度過高 而導致缺陷產生，從而導致所製造積體電路具有不穩定的 操作特性。 因此，有必要提出一種製程方法避免硼磷矽玻璃之石朋 磷含量不穩定，因而防止氣泡缺陷產生。 5-3發明目的及概诚； 鑒於上述之發明背景中，傳統的硼磷矽玻璃沉積方 法在沉積後不可避免的殘留硼磷反應物於機台管線中， 導致後續製程硼磷濃度不穩定，因此本發明之一目的即 利用氦氣潔淨製程管線及活塞，用以有效避免硼磷殘留 物影響後續製程所沉積之硼磷矽玻璃品質。 I I I I I — 111— · 1 - I . (請先閱讀背面之注意事項，再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 本發明提供一種方法有效防止氣泡缺陷產生於硼磷矽 玻璃，首先將一欲進行硼磷矽玻璃沉積製程之晶片載入製 程室中，當該晶片已準確定位之後開始加熱該晶片，使該 晶片保持於該製程所需之溫度，隨後製程所需之反應氣體 導入該製程室，包含載氣及反應物，其中因反應物在常壓 下為液態’係藉由一液體注入活塞（liquid injecti0n va|ve) 轉換為氣態輪入該製程室，並設定該製程室之反應壓力之 -5. 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 472087 A7 B7 五、發明說明（ 後，即可開始爛磷碎破璃之沉積製程。 當該硼磷矽玻璃層沉積6 償儿成疋後，將該晶片載出該製 程室，隨後利用乾式蝕刻渣、I制1 』β洗製程室，並持續通入氦氣潔 淨（purge)該液體注入活塞乃甘 I及其輪送管線，利用幫浦將廢 氣排出之後，即可進行另—a ^ 曰曰片疋硼磷矽玻璃沉積製程。 因此本發明所提供之方法可虚仅― a L t 崔保母一晶片所沉積之删磷珍 玻璃皆具有穩定之硼磷含晋，總Λ m ^ λ 里’避免因硼磷含量不穩定造成 高温製程後之氣泡缺陷。 5-4圖示簡單説明： 本發明之較佳實施例將於隨後之説明文字中辅以下 列圖示做更詳細的闡述： (請先閱讀背面之注意事項我填寫本頁) 第一圖 第二圖 經濟部智慧財產局員工消費合作社印製 第三圖 第四圖 顯示傳統化學氣相沉積系統中之液體注入活塞 示意圖。 描繪傳統的硼磷矽玻璃經過高溫熱流（flow)平坦 化製程之後，產生許多氣泡缺陷之晶片截面示意 圖0 説明本發明之防止氣泡缺陷產生於硼磷矽玻璃之 方法流程方塊圖。 顯示本發明形成硼磷矽玻璃之硼磷含量較穩定之 曲線示意圖。 -6- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 472087 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（） 發明詳細説明： 如上所述，半導體製程中之硼磷ί夕玻璃沉積方法， 容易產生不穩定的硼磷濃度，因而經過高溫製程之後產 生許多氣泡缺陷而影響元件良率，因此為了有效改善習 知技術產生之問題，本發明揭露一種有效防止氣泡缺陷 產生於硼磷矽玻璃之方法。 本發明係利用美商應用材料公司（Applied Materials) 所生產之P 5 Ο Ο 0化學氣相沉積製程系統，為單一晶片式 製程系統。於一較佳實施例中，本發明係為一次常壓化 學氣相沉積製程（Sub-Atmospheric Chemical Vapor Deposition, SACVD)，SACVD製程為一低沉積速率之化 學氣相沉積法，但具有良好之溝填（g a p f i丨丨）能力。 請參考第三圖所示，顯示本發明之防止氣泡缺陷產 生於硼磷矽玻璃（BPSG)之方法流程方塊圖。首先，將欲 進行沉積製程之晶片載入製程室（步驟30)，當該晶片於 製程室中之晶座（susceptor)定位完成之後，隨即透過該 晶座加熱該晶片（步驟3 2 )，溫度約4 0 0至4 8 〇 °C，然後 由氣體系統將製程之反應氣體導入該製程室（步驟34>。 於一較佳實施例中，製程之反應氣體包括含硼、含 磷、含矽及含氧之反應源，其中含硼反應源為TEB (Tri- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------t-------- 訂· ί (請先閱讀背面之注意事項再填寫本頁) 472087 A7 B7 五、發明說明（） ------------ -裝--- (請先閱讀背面之注意事項再填寫本頁)472087 A7 V. Description of the invention (_5-1 Invention of the jaw area .: (Please read the note on the back of the page before filling in this page) The present invention relates to a dilute Φ Λ ® semiconductor process, especially a method of depositing boron phosphorus silicon After the glass (BPSG), the method of preventing bubble defects in the high temperature process of borophosphosilicate glass (BPSG). G-2 BACKGROUND OF THE INVENTION: With the progress of the semiconductor industry 5 ULSI), in order to meet the requirements of integrated circuits in the design of integrated circuits, the size of various components is often reduced to sub-micron, and as the components continue to shrink, the electric power applied during operation is caused. + _Privacy & and power have also been greatly reduced. Therefore, for various components, the tolerance defects and error levels that can be tolerated when shooting as a 1F are also greatly reduced. Used in today's integrated circuit manufacturing processes Among the deposited dielectric materials (due to chemical vapor deposition (chem | capapor Deposition, CVD) has better step coverage (c0verage)), employees of the Intellectual Property Bureau of the Ministry of Economic Affairs can consume Printed agency force, so that it plays an important role in the semiconductor manufacturing process. And because the general dielectric material contains silicon, if you distinguish it by the source of silicon's reactive gas, it can still be divided into silicon sintered silicon (SiH4 >) and organic silicon compounds containing silicon and oxygen (T EOS> as The main two different deposition methods of cvd dielectric materials 0 -2- 'The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 κ 297 mm) 472087 A7 B7 V. Description of the invention (there are two common dielectric materials Silicon oxide (Si02), silicon nitride (Sj3N4), phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), etc., and borophosphosilicate glass is an insulating dielectric material commonly used before metal processing By performing high-temperature thermal flow, it can increase its flatness and reduce the influence of the BPSG film on the surface of the wafer. Therefore, BpSG film is widely used as a surface planarizing dielectric material before metal processing has been performed. The upper 0 side dream glass is usually formed by chemical vapor deposition (Chemjca | Vapor Deposition, CVD). It can use TE0s and boron and phosphorus-containing organic compounds τΜΒ and TMP as the process gas of BPSG. While in order to make The reaction can be carried out at a lower temperature, usually ozone (〇3) is added to participate in the reaction, and TMB, TMP, and TEOS are all liquid at room temperature and normal pressure, so these compounds need to be heated to increase their Saturated vapor pressure 'or carrier gas is used to increase the partial pressure of the liquid reactant. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ------ --pack- ----- Order, f Jing first read the notes on the back and then fill out this page) Refer to the first figure, showing a liquid injection valve 10 of a chemical vapor deposition process machine, which is heated The device 12 is used to keep the gas line at a high temperature. The reaction liquid source 14 is sent to the liquid injection piston through the liquid line 16 and the carrier gas 18 is passed to carry the gasified liquid reactant to the process chamber 20. The advantage is that the flow of carrier gas and liquid reactants can be controlled. However, the internal diameter of the piston is small, and the liquid pipeline to the process chamber contains at least three pistons. After the deposition process is completed, the liquid reactants have been used in accordance with Chinese standards (CNS A4 specification (21〇x 297mm> 472087 A7 B7 V. Description of the invention () Easy to remain in these pistons' Cause the concentration of boron and scale next time to be unstable, especially when the concentration of boron and phosphorus is high, it will be serious Affects the quality of the deposited borophosphosilicate glass. The first picture shows the cross-sectional structure of the phosphorous silicate glass deposited in the conventional technology after high temperature heat flow. Among them, a plurality of semiconductor element structures 24 have been formed on the substrate 22 , And form a dielectric layer (not shown) on the substrate and components for isolation, and then before the metallization process, in order to flatten the substrate, TEOS / 03, TMB, TMPO are used as the reaction gas The BPSG deposition reaction of APCVD was performed to form a so-called bpteOS thin film layer 26. The main function of the thinner dielectric layer is the intermediate layer of the bp TE0S thin film layer 26. Because it does not contain bricks or boron atoms, it does not react with the source (drain) of the device and affect the electricity of the memory. Sex. As mentioned above, in order to increase the flatness of BPSG, it is necessary to perform heat flow at about 850 ~ 90CTC, and as shown in the second figure, the traditional ΒΡΤΕΕΟS thin film layer 26 due to boron phosphorus The content is not stable, so it is easy to form bubble defects28, especially when the high concentration of borophosphosilicate glass is deposited. If such defects occur in the manufacturing process, it not only affects the product yield, but also affects subsequent processes and production capacity. Therefore, a solution is strongly needed to avoid this phenomenon. Borophosphosilicate glass (BPSG) has very good absorption of water vapor in the air because of its phosphorus content. If the phosphorus content is too high, it is prone to bubble defects after high temperature processes. -4-This paper size applies to Chinese National Standards (CNS) A4 specifications (210 X 297 public love) — — ;, 丨 || 丨 ----I · II (Please read the notes on the back and fill in this page before filling in) _ Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 472087 A7 B7 V. Description of the invention (produced from shed phosphosilicate glass, if the boron content is too high, crystals are liable to precipitate. In order to effectively improve the fluidity of borophosphosilicate glass to improve the flattening effect, the heat flow (therma 丨 f 0w) temperature, but defects often occur due to excessive temperature, which leads to unstable operating characteristics of the fabricated integrated circuit. Therefore, it is necessary to propose a process method to avoid the pentamite content of borophosphosilicate glass. Stable, thus preventing the occurrence of bubble defects. 5-3 Purpose and sincerity of the invention; In view of the above background of the invention, the traditional borophosphosilicate glass deposition method will inevitably leave boron and phosphorus reactants on the machine pipeline after deposition. In the subsequent process, the concentration of boron and phosphorus in the subsequent process is unstable. Therefore, one object of the present invention is to clean the process pipeline and the piston with helium to effectively prevent the residue of boron and phosphorus from affecting the quality of the borophosphosilicate glass deposited in the subsequent process. IIIII — 111 — · 1-I. (Please read the notes on the back before filling this page) Order printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs This invention provides a method to effectively prevent bubble defects from occurring in borophosphosilicate glass. The wafer to be subjected to the borophosphosilicate glass deposition process is loaded into the process chamber. After the wafer has been accurately positioned, the wafer is heated to keep the wafer at the temperature required by the process, and the reaction gas required for the subsequent process is introduced into the process. The chamber contains a carrier gas and a reactant, and because the reactant is liquid under normal pressure, it is converted into a gaseous turn into the process chamber by a liquid injection piston (liquid injecti0n va | ve), and the reaction of the process chamber is set. Pressure of -5. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 472087 A7 B7 V. Description of the invention (after, Begin the deposition process of rotten phosphorus and broken glass. After the borophosphosilicate glass layer is deposited, the wafer is carried out of the process chamber, and then the dry etching slag and the 1′β washing process chamber are used, and Continuously purge the helium gas to purge the liquid into the piston Nagan I and its carousel line. After exhausting the exhaust gas with the pump, another process can be performed—a ^ a piece of borophosphosilicate glass deposition process. The method provided by the invention can only be ― a L t Cui Baomu's wafers have a stable boron and phosphorus content, and the total Λ m ^ λ 'can avoid the high temperature process caused by the unstable boron and phosphorus content. Bubble defects. 5-4 illustration of the diagram: The preferred embodiment of the present invention will be explained in more detail in the following explanatory text with the following diagram: (Please read the precautions on the back first and fill in this page) The second picture is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The third picture and the fourth picture show the liquid injection piston in the traditional chemical vapor deposition system. Schematic cross-section diagram of a conventional borophosphosilicate glass after high-temperature heat flow (flattening) planarization process, which produces many bubble defects. Figure 0 illustrates a block diagram of the method of the present invention for preventing bubble defects from being generated in borophosphosilicate glass. Schematic diagram showing the stable borophosphorus content of the borophosphosilicate glass formed by the present invention. -6- This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) 472087 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Detailed description of the invention: As mentioned above, the semiconductor The boron-phosphorus glass deposition method in the manufacturing process is prone to generate unstable boron-phosphorus concentration, so many bubble defects are generated after high-temperature processing, which affects the yield of the device. Therefore, in order to effectively improve the problems generated by the conventional technology, the present invention discloses a Method for effectively preventing bubble defects from being generated in borophosphosilicate glass. The present invention utilizes a P 5 0 0 0 chemical vapor deposition process system produced by Applied Materials, which is a single wafer process system. In a preferred embodiment, the present invention is a Sub-Atmospheric Chemical Vapor Deposition (SACVD) process. The SACVD process is a chemical vapor deposition process with a low deposition rate, but has good trenches. Fill (gapfi 丨 丨) ability. Please refer to the third figure, which shows a block diagram of a method for preventing bubble defects from being generated in borophosphosilicate glass (BPSG) according to the present invention. First, the wafer to be deposited is loaded into the process chamber (step 30). After the wafer is positioned in the wafer holder (susceptor) in the process chamber, the wafer is then heated through the wafer holder (step 32). About 400 to 480 ° C, and then the reaction gas of the process is introduced into the process chamber by the gas system (step 34 >. In a preferred embodiment, the reaction gas of the process includes boron, phosphorus, silicon And oxygen-containing reaction sources, among which the boron-containing reaction source is TEB (Tri- This paper size applies to Chinese National Standard (CNS) A4 specifications (210 X 297 mm) ------------ t- ------- Order · ί (Please read the precautions on the back before filling out this page) 472087 A7 B7 V. Description of the invention () ------------ -Install --- ( (Please read the notes on the back before filling out this page)
Ethyl- Borate)，含鱗之反應源為 TEP〇 .（Tri-Ethy卜 Phosphate)，含矽之反應源為 TEOS (Tetra-Ethy 卜 Ortho-Silicate)，及含氧之反應源為臭氧（〇3) /氧氣（〇2)，最後藉 由一混合系統將其混合。上述之反應源僅用以説明本發 明，非用以限定本發明之實施，其他類似之反應源，例 如 TMB (Tri-Methy卜Borate)或 TMPO (Tri-Methyl-Phosphate)亦可應用於本發明。 上述之TEB、TEPO及TEOS等三種化合物於室溫 常壓下皆為液態，利用液體注入活塞（丨icluid injection v a丨v e)將其氣化，該液體注入活塞可良好的控制反應氣體 進入混合系統之體積，上述之TEB、TEPO及TEOS等三 種反應氣體之流量分別為11 〇、50及500 seem，被氣化 的反應氣體進入混合系統中，，同時含氧之反應源為臭氧 (〇3)/氧氣（〇2)亦導入混合系統中，然後再以氦氣為載氣 (carrier, gas)將混合氣體攜帶至氣體分怖系統中，載氣氦 氣之流量約為6 0 0 0 s c c m，而混合氣體之總流量約為1 2 0 0 seem 〇 經濟部智慧財產局員工消費合作社印製 製程室藉由一節氣活塞控制該混合氣體之導入，用 以設定及保持製程室之製程壓力（步驟3 6 )，製程室之反 應壓力約為200 torr，所有製程條件設定完成之後即可進 行硼磷矽玻璃之沉積製程（步驟3 8 )，沉積厚度約為7 0 0 0 至 1 1 000 A ° -8- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 47208? 經濟部智慧財產局員工消費合作社印製 Λ7 五、發明說明（） 當硼磷矽玻璃層沉積完成之後，將該已完成沉積製程 之晶片載出該製程室（步驟4〇)，隨後，為避免反應生成物 附著於製程室而成為後續製擇之微粒來源’影響製程良 率，製程室可進行一乾式蝕刻清洗製程，藉由電漿將製程 室沉積之生成物蚀刻清除，以增加製程良率，該電漿所使 用之氣體源為C2F6及NF3。同時，通入氦氣用以潔淨（purge) 氣體管線及該液體注入活塞（步驟4 2 )，避免液體注入活塞 及氣體管線中之其他元件殘留含硼或含磷之反應氣體，造 成後續製程之硼、磷含量不穩定，其中氦氣之流量約5 0 0 seem，通氣時間約30秒，即可完成潔淨步驟，確保後績 製程無硼磷污染。隨後利用排氣系統將廢氣排出（exhaust) 製程室，即可接續另一晶片之沉積製程。 該已完成硼磷矽玻璃沉積之晶片被轉移至一爐管，於 充滿氮氣或其他惰性氣體之環境中進行熱流（f|〇w)製程， 用以增進該晶片表面之平坦性，熱流溫度約為8 5 0至9 0 0 C ’熱流時間約1 5分鐘。利用本發明所沉積之硼磷矽玻 璃（BPSG)之删含量約16%，磷含量約為14〇/。，相較一般 標準棚鱗5夕玻璃而言為一高濃度硼磷矽玻璃，然而即使經 過高溫熱流製程之後亦不會有氣泡缺陷產生。 請參考第四圖所示，顯示晶片沉積硼磷矽玻璃後之硼 及磷含量，其中編號1 -1之晶片為利用同一製程系統沉積 -9-Ethyl- Borate), the reaction source containing scales is TEP. (Tri-Ethy and Phosphate), the reaction source containing silicon is TEOS (Tetra-Ethy and Ortho-Silicate), and the reaction source containing oxygen is ozone (〇3 ) / Oxygen (〇2), and finally mixed by a mixing system. The above reaction sources are only used to illustrate the present invention and are not intended to limit the implementation of the present invention. Other similar reaction sources, such as TMB (Tri-Methy borate) or TMPO (Tri-Methyl-Phosphate) can also be applied to the present invention. . The above three compounds, TEB, TEPO and TEOS, are all liquid at room temperature and normal pressure. They are vaporized by using a liquid injection piston (丨 icluid injection va 丨 ve). The liquid injection piston can well control the reaction gas into the mixing system. In terms of volume, the flow rates of the three reaction gases, TEB, TEPO, and TEOS, are 11 〇, 50, and 500 seem, respectively. The gasified reaction gas enters the mixing system, and the reaction source containing oxygen is ozone (〇3) / Oxygen (〇2) is also introduced into the mixing system, and then the helium is used as the carrier gas (carrier, gas) to carry the mixed gas to the gas distribution system. The flow rate of the carrier gas helium is about 6 0 0 sccm, And the total flow of the mixed gas is about 1 2 0 seem 〇 The printing process room of the employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs controls the introduction of the mixed gas through a gas piston to set and maintain the process pressure of the process room (step 3 6), the reaction pressure of the process chamber is about 200 torr. After all the process conditions are set, the borophosphosilicate glass deposition process can be performed (step 38), and the deposition thickness is about 7 0 0 to 1 1 000 A. -8- This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 public love) 47208? Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives Λ7 V. Description of the invention () After the borophosphosilicate glass layer has been deposited The wafer that has completed the deposition process is carried out of the process chamber (step 40). Then, in order to avoid the reaction products from attaching to the process chamber and becoming a source of particles for subsequent selection, the process yield can be affected by the process chamber. In the dry etching cleaning process, the products deposited in the process chamber are etched and removed by a plasma to increase the process yield. The gas sources used in the plasma are C2F6 and NF3. At the same time, helium gas is passed in to purge the gas line and the liquid injection piston (step 42), to avoid residual boron or phosphorus-containing reaction gas in the liquid injection piston and other components in the gas line, which will cause subsequent processes. The content of boron and phosphorus is unstable. The flow rate of helium is about 50 0 seem, and the aeration time is about 30 seconds. The cleaning step can be completed to ensure no boron and phosphorus pollution in the subsequent production process. The exhaust system is then used to exhaust the exhaust process chamber, which can be followed by another wafer deposition process. The wafer having been deposited with borophosphosilicate glass is transferred to a furnace tube, and a heat flow (f | 0w) process is performed in an environment filled with nitrogen or other inert gas to improve the flatness of the wafer surface. The heat flow temperature is about For 850 to 9 0 C 'heat flow time is about 15 minutes. The deletion content of borophosphosilicate glass (BPSG) deposited by the present invention is about 16%, and the phosphorus content is about 14%. It is a high-concentration borophosphosilicate glass compared to the standard standard glass, but even after the high temperature heat flow process, there will be no bubble defects. Please refer to the fourth figure, which shows the boron and phosphorus content after the borophosphosilicate glass is deposited on the wafer. The wafers No. 1 -1 are deposited using the same process system -9-
各紙張尺度適财國贿辟（CNS)A4祕⑵G ----------- II -裝-------—訂：. (請先閱讀背面之注意事項再填寫本頁) 472087Each paper size is suitable for rich countries (CNS) A4 Secret G ----------- II-Install ----------- Order: (Please read the precautions on the back before filling in this Page) 472087
五、發明說明（ 經濟部智慧財產局員工消費合作社印製 之弟一片晶片’而編號1_2 >曰“V. Description of the invention (a piece of chip printed by the brother of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs' and number 1_2 >
、 又叫片為利用同一製程系統j5I 積之第二片晶片，由圖中可眼淑找 w T』明顯發現硼磷含量均大幅相 加，顯示製程系統夫經备盗、切“ & 禾π虱轧潔淨製程所沉積之硼磷矽磁 璃，其硼麟含量不稃定，脏冰上.& 〜 、&成後續沉積膜層之硼鱗含量 持續升高，尤其是石粦含量，说古、m > Αι, 於呵ί皿熱流製程之後將產生翕 泡缺陷或是测結晶折出。 請繼續參考第四圖，其中編號2-1之晶片為利用同-製程系統經氦氣潔淨製程之後沉積之第一片晶片，而編號 2-2之晶片為利用同-製程系統經氦氣潔淨製程之後沉積 <第一片晶片’由圖中結果可明顯發現經氦氣潔淨製程之 後 >儿積之硼磷矽破璃，其硼磷含量趨於穩定，不再有持續 升南之趨勢’可確保所沉積之硼磷矽玻璃具有固定的硼磷 含量，避免高溫製程後之缺陷產生。 综上所述，本發明所揭露之方法係用於防止氣泡缺陷 產生於硼磷矽玻璃，傳統SACVD製程系統於沉積製程後 會有含硼磷化學反應氣體殘留於沉積製程系統中氣體管線 及液體注入活塞中，而影響後續沉積製程之硼磷含量，本 發明所揭露之方法利用氦氣對沉積製程系統作全面的潔淨 製程，特別是氣體管線及液體注入活塞中之細小管線，不 僅可提高沉積製程之良率，又不會造成製程成本之增加。 本發明以一較佳實施例説明如上，僅用於藉以幫助了 -10- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---------II -裝-------.-訂：- (請先閱讀背面之注意事項再填寫本頁) 472087 A7 B7 五、發明說明（） 解本發明之實施，非用以限定本發明之精神，而熟悉此領 域技藝者於領悟本發明之精神後，在不脱離本發明之精神 範圍内，當可作些許更動潤飾及等同之變 '化替換，例如其 它化學氣相沉積系統，或是其他含硼或磷之介電材料等， 其專利保護範圍當視後附之申請專利範圍及其等同領域而 定。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）, Also known as the second chip using the same process system j5I, can be found from the picture w T "It is obvious that the boron and phosphorus content are significantly added, showing that the process system is prepared to steal, cut" & Wo The content of boron, phosphorus and silicon magnetic glass deposited by the π lice rolling cleaning process has an uncertain boron content on dirty ice. The content of boron scales in the subsequent deposited film layer continues to increase, especially the content of stone maggots. Speaking of ancient, m > Αι, blister defects or crystal break-off will occur after the heat flow process. Please continue to refer to the fourth figure, in which the wafer number 2-1 is helium using the same-process system. The first wafer deposited after the gas clean process, and the wafer numbered 2-2 was deposited after the helium clean process using the same-process system < the first wafer '. After > Erji's borophosphosilicate broken glass, its borophosphorus content tends to be stable, and there is no longer a trend of rising south. Defects arise. In summary, what is disclosed in the present invention The method is used to prevent bubble defects from being generated in borophosphosilicate glass. After the traditional SACVD process system, boron-phosphorus-containing chemical reaction gases remain in the gas pipeline and liquid in the piston in the deposition process system, which affects the subsequent deposition process. The content of boron and phosphorus. The method disclosed by the present invention uses helium to perform a comprehensive clean process on the deposition process system, especially the gas pipeline and the small pipelines in which the liquid is injected into the piston, which can not only improve the yield of the deposition process, but also not cause the process. Increase in cost. The present invention is explained above with a preferred embodiment, which is only used to help -10- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------- --II -Install -------.- Order:-(Please read the precautions on the back before filling this page) 472087 A7 B7 V. Description of the invention () Explain the implementation of this invention, not to limit this The spirit of the invention, and those skilled in the art who understand the spirit of the present invention, without departing from the spirit of the present invention, can make some modifications and equivalent changes, such as other chemical vapors. System, or other dielectric materials containing boron or phosphorus, the scope of patent protection depends on the scope of patent applications and their equivalent fields. (Please read the precautions on the back before filling this page) Ministry of Economic Affairs Printed by the Intellectual Property Bureau's Consumer Cooperatives 11 This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm)