KR100458140B1 - manufacturing apparatus and method of thin-film for semiconductor device - Google Patents

Abstract

The present invention relates to a thin film deposition method and apparatus for depositing a thin film on a wafer located inside a chamber through a chemical reaction of a plurality of gases introduced into at least one connection tube, and a plurality of gaseous materials introduced into the chamber. Heat-treating at least one of the tubes at a temperature of 300 ° C. or more and 2000 ° C. or less; It provides a thin film deposition method comprising the step of injecting a plurality of gaseous material including the heat-treated gaseous material into the chamber and depositing a thin film on the wafer through their chemical reaction and the apparatus for enabling the same.

Description

TECHNICAL APPARATUS AND MANUFACTURING APPARATUS OF THE SEMICONDUCTOR DEVICE

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film deposition apparatus and a method of the semiconductor device, and more particularly, to a thin film deposition apparatus and a method for depositing a thin film on a wafer through a chemical vapor deposition method (CVD). It is about.

A semiconductor device is a large scale integration (LSI) that is realized through a plurality of deposition and patterning processes of a thin film on a wafer, which is a substrate. Epitaxy process, thin film deposition process, diffusion / ion implantation process, photolithography, etching process and the like.

Among them, the thin film deposition process is inevitably required for each component of the semiconductor device, and thus is a very important process that is repeated several times throughout the entire process of semiconductor manufacturing. Thus, the thin film realized through the thin film deposition process can be classified into four types according to the use. The insulating film (SiO ₂ ) mainly used for the gate oxide film or the field oxide film, and the insulating layer or the diffusion / ion implantation between the conductive layers A nitride film (Si ₃ N ₄ ) mainly used as a mask or device protection layer, a polysilicon film (poly-Si) used as a gate electrode instead of a metal, and a component or external terminal connected within a semiconductor device It is a metal film serving as an electrode.

Furthermore, as a thin film deposition method, it is possible to impart excellent uniformity and step coverage properties to a finished thin film, and chemical vapor deposition (CVD) which has high productivity is widely used. In brief, a wafer is mounted in a chamber having a closed reaction zone, and then a plurality of reactants are simultaneously injected into the reaction zone to deposit chemical reaction products thereon. .

1 is a schematic cross-sectional view of a thin film deposition apparatus for the above-described chemical vapor deposition method.

A general thin film deposition apparatus includes a chamber 10 defining a closed reaction region in which a wafer 5, which is a thin film deposition object, is placed, and a gas supply unit 40 storing a plurality of gaseous substances supplied to the reaction region. It can be divided into.

At this time, the chamber 10 includes a pressure reducing means such as an inlet pipe 12 connected to the gas supply unit 40 described above, a discharge pipe 14 for discharging gaseous substances in the reaction zone, and a pump P installed at an end thereof. The internal reaction zone includes a chuck 20 to support the wafer 5 so that the wafer 5 is seated on an upper surface thereof.

In addition, the gas supply unit 40 includes first and second gas storage devices 42 and 46 for storing different first and second gases S1 and S2, respectively, and the first and second gases stored in each of them. First and second mass flow controllers (MFCs) 44 and 48 which control flow rates of S1 and S2 and supply them to the chamber 10 are included.

Therefore, when the wafer 5 is first introduced into the chamber 10 and seated on the upper surface of the chuck 20, and then the chamber 10 is sealed, the first gas S1 stored in the first gas storage device 42 may be the first gas. Through the gas flow adjusting device 44, the second gas S2 stored in the second gas storage device 46 is supplied to the chamber 10 through the second gas flow adjusting device 48, and these first and The second gases S1 and S2 chemically react in the reaction region in the chamber 10 to stack the reaction product on the wafer 5 to form a thin film.

In this case, in order to more easily induce a chemical reaction between the gaseous material proceeding in the reaction zone, it is common to mount a heat generating heater 22 in the chuck 20 supporting the wafer 5. (10) A high temperature environment is provided inside, and the chemical reaction between the first and second gases proceeds smoothly.

As such, the process temperature imparted into the reaction region of the chamber 10 is different depending on the desired thin film. In particular, in the case of a semiconductor nitride film or an oxide film, a high temperature environment of 700 ° C. or higher is required. That is, at least one gaseous material selected from NH ₃ , N ₂ O, and O ₂ may be used as the first gas for implementing the semiconductor nitride film Si ₃ N ₄ or the oxide film SiO ₂ , and SiH ₄ , Si may be used as the second gas. One selected from ₂ H ₆ is used. Among these, gaseous substances such as NH ₃ , N ₂ O, and O ₂ constitute a very stable compound, and thus a high temperature of 700 ° C. or higher is required to break the bond between these molecules.

However, in this high temperature process, the wafer 5, which is a thin film deposition target, is also exposed to high temperature for a long time, and thus suffers a severe thermal shock. Or an unexpected doping state of an ion impurity is caused, which in turn causes a great threat to the reliability of the finished semiconductor device. In addition, the configuration of the thin film deposition apparatus is complicated for the high temperature process, and also has a problem that it is very difficult to control the high temperature environment in the chamber 10 has a problem that the semiconductor manufacturing process does not proceed smoothly.

The long-distance plasma which excites the first and / or second gases S1 and S2 into a plasma state to impart lower activation energy and injects gas containing the plasma component into the chamber 10. remote plasma method has been developed. To this end, a plasma generator of capacitively coupled plasma (CCP) or inductively coupled plasma (ICP) is generally mounted in regions A and / or B of FIG. 1.

However, the thin film deposition method using the remote plasma also shows some fatal problems, such as sputtering phenomenon or plasma charging damage of the wafer 5 by plasma ions.

In other words, the plasma in the form of partially charged ions is very difficult to control, which causes severe physical damage to the wafer 5 when sputtering phenomenon in which plasma ions collide with the wafer 5 at high speed occurs. do. In addition, when the plasma density in the reaction region is uneven or excessively high, plasma charging damage occurs that damages the silicon oxide film (gate insulating film) previously formed on the wafer 5, which is particularly a semiconductor device. It is more serious by the fine patterning according to the trend of increasing the degree of integration.

In addition, since the plasma generating apparatus must be additionally provided in the existing thin film deposition apparatus, the construction cost of the apparatus is increased, and the first and / or second gas S1 introduced into the chamber 10 for the excitation and maintenance of the plasma (S1). , The pressure of S2) can not be limited, but has a problem of lowering the productivity.

The present invention has been made to solve the above problems, while minimizing the thermal shock applied to the wafer, while providing a thin film deposition method and a thin film deposition apparatus that enables the implementation of the improved thin film, have.

1 is a schematic structural diagram of a general thin film deposition apparatus

2 is a schematic structural diagram of a thin film deposition apparatus according to the present invention

Figure 3a is an enlarged cross-sectional view of the gas pretreatment unit included in the thin film deposition apparatus according to the present invention

Figure 3b is an enlarged cross-sectional view showing a modification of the gas pretreatment unit included in the thin film deposition apparatus according to the present invention

Figure 4 is a graph showing the thin film implemented by the thin film deposition apparatus according to the present invention in comparison with the general case

<Description of the symbols for the main parts of the drawings>

5: wafer 110: chamber

112: inlet pipe 114: discharge pipe

120: chuck 122: first heater

140: gas supply unit 142, 146: first and second gas storage device

144, 145, 148: first to third gas flow rate control device

160: gas pretreatment unit 162, 164, 166: first to third connection pipe

P: Pump

In order to achieve the above object, the present invention includes a chamber in which a wafer is mounted and a chuck having wafer heating means and a gas supply unit for supplying a plurality of gases into the chamber. A thin film deposition apparatus for depositing a thin film on the wafer through a chemical reaction between gases, the gas supply unit comprising: a first gas storage device for storing a first gas; A first connecting pipe and a second connecting pipe connecting the first gas storage device and the chamber; A first gas flow rate adjusting device and a second gas flow rate adjusting device for respectively controlling the flow rates of the first gas flowing through the first connecting pipe and the second connecting pipe; A second gas storage device for storing a second gas; A third connecting pipe connecting the second gas storage device and the chamber; A third gas flow rate adjusting device for controlling a flow rate of the second gas flowing through the third connecting pipe; The gaseous material is installed in the first connection pipe, and includes a heater generating heat of 300 ° C. or more and 2000 ° C. or less therein, and a packing material arranged to surround the heater and having a plurality of connected micropores. The present invention provides a thin film deposition apparatus including a gas pretreatment unit activated through a radical while passing through a plurality of connected microporous structures.

The gas supply unit includes at least one third gas storage device for storing a third gas; At least one fourth connecting pipe connecting the third gas storage device to the chamber; Preferably, the apparatus further comprises at least one fourth gas flow rate adjusting device for controlling the flow rate of the third gas flowing through the fourth connecting pipe. The first connecting pipe, the second connecting pipe, and the third connecting pipe are connected to one another. The filler is preferably a fine ball of ceramic material having a diameter of 2 mm or less. The filler is preferably a mesh of ceramic material. The heater generates heat by resistance heating. Preferably, the heater is connected to the same power source as the wafer heating means of the chuck. The first gas is at least one selected from NH ₃ , N ₂ O, and O ₂ , and the second gas is SiH. _4, it is preferable that a selected one of Si ₂ H _6. the flow rate of the first gas flow rate of the first gas through the first connecting tube and passing through the second connecting tube is the same It is preferred.

In another aspect, the present invention is a thin film deposition method for depositing a thin film on a wafer located inside the chamber through the chemical reaction of a plurality of gases introduced into at least one connector, a portion of the first gas is 300 ℃ in the first connector After the heat treatment to the temperature of more than 2000 ℃ or less is introduced into the chamber, the remainder of the first gas is introduced into the chamber without heat treatment through the second connecting pipe, the second gas is introduced into the chamber through the third connecting pipe, Provided is a thin film deposition method for depositing a thin film on a wafer through a chemical reaction of the gas. The heat treatment step, the heater is installed in the first connection pipe to generate heat of more than 300 ℃ 2000 ℃; A filler having a plurality of connected micropores arranged to surround the heater, such that the gaseous material passes through the plurality of connected micropores in the form of radicals The filler is preferably a fine ball of ceramic material having a diameter of 2 mm or less. The filler is preferably a mesh of ceramic material. Preferably, the heater generates heat by resistive heating. The heater is preferably connected to the same power source as the wafer heating means installed in the chuck mounted in the chamber. The first gas is NH ₃ , N ₂ O, At least one selected from O ₂ , and the second gas is preferably selected from SiH ₄ and Si ₂ H _6. The flow rate of the first gas passing through the first connecting pipe and the second passing through the second connecting pipe are preferred. The flow rate of one gas is preferably the same. Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

2 is a schematic cross-sectional view of a thin film deposition apparatus according to the present invention, a chamber 110 defining a reaction region enclosed therein, and a gas supply unit 140 supplying a plurality of gaseous substances to the reaction region of the chamber 110. ) Is included.

In this case, the chamber 110 includes an inlet pipe 112 connected to the gas supply unit 140, a decompression pipe 114 for discharging gaseous substances in the reaction zone, and a pressure reducing means such as a pump P installed at an end thereof. The chuck 120 supporting the wafer 5 is installed in the internal reaction region, and the wafer 5, which is a thin film deposition object, is mounted on the upper surface thereof, and the first heater 122 is disposed inside the chuck 120. Mounting can be said to be the general case and the Orient.

In addition, the gas supply unit 140 includes first and second gas storage devices 142 and 146 for storing the first and second gases S1 and S2, respectively, wherein the first gas storage devices 142 are respectively. It is connected to the inlet pipe 112 through the first and second connecting pipes 162 and 164, the second gas storage device 146 is connected to the inlet pipe 112 through the third connecting pipe 166. In particular, these first to third connection pipes (162, 164, 166) is characterized in that the first to third gas flow rate control device (144, 145, 148) are respectively installed. That is, the first gas S1 stored in the first gas storage device 142 may include the first gas flow rate adjusting device 144 installed in the first connection pipe 162 and the first gas flow adjusting device 144 installed in the second connection pipe 164, respectively. The second gas flow control device 145 is supplied to the chamber 110, and the second gas S2 of the second gas storage device 146 is installed in the third connection pipe 166. 148 is supplied to the chamber 110.

In addition, the present invention particularly includes a gas pretreatment unit 160 mounted between the first or second gas flow control devices 144 and 145 and the inlet pipe 112, that is, the gas pretreatment unit 160 according to the present invention. Is either the first connecting pipe 162 connecting the first flow controller 144 and the inlet pipe 112 or the second connecting pipe 164 connecting the second flow controller 145 and the inlet pipe 112. It will be mounted on either.

In this case, the gas pretreatment unit 160 according to the present invention may be mounted to the third connection pipe 166 according to the purpose, and furthermore, when there are three or more kinds of gaseous substances introduced into the chamber 110, although not shown, It can be expected that the supply unit 140 includes a fourth connecting pipe and a third gas storage device connected to the inlet pipe 122, and a fourth flow control device mounted on the fourth connecting pipe. It is also possible to be mounted on the fourth connector. As a result, the gas pretreatment unit 160 according to the present invention may be freely applied as long as it is mounted on any one of the first or second connection pipes 162 and 164, which will be apparent to those skilled in the art through the following description. will be.

For convenience, the gas pretreatment unit 160 according to the present invention will be described as being mounted only on the first connection pipe 162 as shown in the drawing. Therefore, the gas pretreatment unit 160 according to the present invention is mounted on the first connection pipe 162 connecting the first gas flow control device 144 and the inlet pipe 112 of the chamber 110, which is a chamber ( The first gas (S1) supplied to 110 is preheated to a temperature of 300 ° C. or more and 2000 ° C. or less, thereby activating in the radical form.

3A and 3B show enlarged cross sections of the gas pretreatment unit 160 according to the present invention. In this case, the gas pretreatment unit according to the present invention shown in FIGS. 3A and 3B has substantially the same function, and the same reference numerals are assigned to the same elements.

The gas pretreatment unit 160 according to the present invention connects the first gas flow control device 144 and the inlet pipe 112, and substantially extends a portion of the first connecting pipe 162. tube), particularly inside the heat generating unit 160a having a second heater 160a-1 having a heating temperature of 300 ° C or more and 2000 ° C or less, and surrounding the heat generating part 160a. Filler (160b-1 in FIG. 3A and 160b-2 in FIG. 3B).

In this case, the second heater 160a-1 may use the same resistance heating method as the first heater 122 mounted in the chuck 120 of FIG. 2, and thus may share its power. In addition, the filling unit defining micropores connected to each other is surrounded by the heat generating unit 160a, which generates the first gas S1 and the heat generating unit 160a passing through the gas pretreatment unit 160 according to the present invention. It expands the contact area of heat. Accordingly, as shown in FIG. 3A, a plurality of fine balls 160b-1 are filled around the heating unit 160a or provided with a grid network 160b-2 having mesh meshes as shown in FIG. 3B. In this case, the filler may be wound around the outer surface of the heat generating unit 160a, and the filling material is preferably a heat-resistant material such as a ceramic having low reactivity even at high temperature.

In addition, the filling defining the plurality of connected micropores also has a role of thermal insulation to prevent the heat generated from the second heater 160a-1 to be conducted to the outside. In particular, the plurality of microballs 160b− In the case of using 1), the diameter thereof is preferably as small as possible, but it may be advantageous to have a diameter of 2 mm or less, preferably about 1 mm so as not to prevent the smooth running of the first gas S1.

Therefore, the gaseous material passing through the gas pretreatment unit 160 according to the present invention is connected to each other around the heat generating unit 160a in which the second heater 160a-1, which generates heat at an extremely high temperature of 300 ° C. or more and 2000 ° C. or less, is connected thereto. Fills imparting multiple microporous structures break the molecular bonds, resulting in radical forms with significantly lower activation energies.

On the other hand, in the present invention, unlike the general case, the first gas pipe 142 and the inlet pipe 112, the first connecting pipe 162, 164 and the second connecting pipe, respectively, wherein the first connecting pipe The first gas flow rate adjusting device 144 is provided at 162 and the second gas flow rate adjusting device 145 is installed at the second connecting pipe 164, respectively. By controlling the flow rate of the devices 144 and 145, the first gas S1 is introduced into the chamber 110 through the first connecting pipe 162 and the second connecting pipe 164, respectively.

In summary, in the driving of the thin film deposition apparatus according to the present invention, when the wafer 5 is first introduced into the chamber 110 and seated on the upper surface of the chuck 120, the chamber 110 is sealed, and then the inside of the chuck 120 is removed. As the first heater 122 generates heat, the first gas S1 and the second gas S2 are supplied to the chamber 110 by the first to third gas flow rate adjusting devices 144, 145, and 148. .

At this time, the first gas S1 is supplied to the chamber 110 via the first connecting pipe 162 and the second connecting pipe 164 by the first and second gas flow rate adjusting devices 144 and 145, respectively. Bar, a part of the first gas (S1) passing through the first connecting pipe 162 of the radical structure broken in the molecular structure by the gas pretreatment unit 160 according to the present invention is heated to a temperature of 300 ° C or more and 2000 ° C or less. The remaining of the first gas S1 flowing into the chamber 110 and passing through the second connecting pipe 164 is introduced into the chamber 110 in a gaseous state.

In contrast, since the second gas S2 is supplied to the chamber 110 through the third connecting pipe 166, the first gas in the gas state and the first gas in the radical form The second gas coexists, and the reaction product is laminated on the wafer 5 as a thin film through a chemical reaction of these gaseous substances.

In the thin film deposition apparatus according to the present invention described above, in particular, when the type of the thin film implemented on the wafer 5 is a semiconductor nitride film or an oxide film, the first gas S1 is selected from NH ₃ , N ₂ O, and O ₂ . It can be expected that at least one selected or selected one of SiH ₄ , Si ₂ H ₆ , the gas of NH ₃ , N ₂ O, O ₂ that needs to be double activated will correspond to the first gas (S1).

In addition, the method for connecting the first gas storage device 142 and the inlet pipe 112 only to the first connection pipe 162, that is, the total amount of the first gas (S1) gas pretreatment device 160 according to the present invention It can be expected to be introduced into the chamber 110 by activating, but this will lower productivity, for example, when NH ₃ is pyrolyzed, forms of N, N ₂ , H, H ₂ , NH, NH _2, etc. Of these, N ₂ gas has a very small contribution to the thin film deposition process, if the ratio is released, the productivity of thin film deposition is reduced. On the other hand, connecting the first gas storage device 142 and the inlet pipe 112 only with the second connection pipe 164 is the same as the general case, and thus description thereof will be omitted.

Accordingly, the present invention provides first and second connecting pipes 164 and 166 for connecting the first gas storage device 142 and the inlet pipe 112 of the chamber 110 and the first and second gases mounted to each of them. By providing the flow control device (144, 145), the first gas (S1) is properly mixed in a gaseous state or activated state is introduced into the chamber (110). At this time, their mixing ratio may be properly adjusted according to the process conditions, but an example thereof is summarized in Table 1.

In the thin film deposition apparatus according to the present invention, experimental data obtained by depositing a SiN thin film on a wafer using NH ₃ as the first gas S1 and SiH ₄ as the second gas S2, respectively. In particular, in this experiment, the total amount of the first gas supplied to the chamber is fixed at 2000 sccm so as to know the ratio of the mixing ratio at which the best thin film is obtained, that is, the ratio of the first gas in the form of radical and the first gas in the gaseous state, The amount of NH ₃ gas (P-NH ₃ in Table 1) and the amount of NH ₃ (L-NH3 in Table 1) supplied to the third connecting pipe 166 are passed through the pretreatment device 160 according to the present invention. Differently, the thin film characteristics are compared.

At this time, the temperature of the heat generating unit 160a included in the pretreatment device 160 according to the present invention was fixed at 1100 ° C., the pressure in the chamber 110 at 20 Torr, and the process temperature was about 700 ° C., and the carrier gas was 1000 sccm N. Thin film deposition was performed for 180 seconds using ₂ gases. In addition, the characteristics of the thin films implemented in each of these cases are presented in five categories, and the definitions of these thin film characteristics measurement items and the meanings of the values are briefly summarized.

1. THK: The thickness of the deposited thin film is shown, and the center of the wafer and the five points of the top, bottom, left, and right sides of the thin film are measured as in the case of measuring a thin film deposition thickness of a general wafer. Higher values indicate better productivity.

2. DR: Deposition Rate In other words, it shows the thickness of the thin film deposited per minute, which also measured 5 points of the wafer. The larger the value, the higher the productivity.

3. Unif: Uniformity of film thickness. The closer to zero, the better the film.

4. RI: The refractive index is in the range of about 1.8 to 2.0 in the SiN thin film, which means that the film is good. The larger the value, the better the film quality.

5. WR: The wet-etch rate of the deposited thin film compared with the thermal oxide film is the value (Wet-etch Rate). The lower the better the film quality. In this experiment, the result of etching for 20 minutes in 100: 1 HF solution was used.

6. IR-PR: It is a value that indicates the ratio of the electromagnetic wave absorption rate (IR-Peak ratio). The higher the N-H / Si-H ratio, the better the film quality.

TABLE 1

P-NH3 (CCCM) L-NH3 (CCCM) THK (Å) DR (Å / min) Unif (%) RI WR (mm / min) N-H / Si-H PR 0 2000 976.2 325.4 3.74 2.009 19.3 0.35 500 1500 911.3 303.8 3.41 2.027 15.9 0.23 1000 1000 842.5 280.8 3.38 2.038 13.6 0.21 1500 500 846.2 282.1 3.28 2.034 14.1 0.20 2000 0 710.8 236.9 4.66 2.054 10.9 1.00

As can be seen above, the preheating of the entire amount of NH ₃ as the first gas (S1) via the gas pretreatment unit 160 according to the present invention, and then supplied to the chamber 110, the productivity is lowered, but WR, IR It can be seen that the membrane properties such as PR are greatly improved. Although in the results of Table 1, the process temperature in the chamber 110 is not revealed well because the process temperature is fixed at 700 ° C., a thin film having similar characteristics may be realized even if the process temperature of the chamber 110 is lowered to 600 ° C. or less. .

This can greatly reduce the process temperature using the gas pretreatment unit 160 according to the present invention, thereby minimizing thermal damage to the wafer (5).

In contrast, when the NH ₃ , which is the first gas S1, is supplied to the chamber 110 in a gaseous state in the same manner as the general chemical vapor deposition method, although the productivity is somewhat improved, the quality of the thin film may be deteriorated. In particular, lowering the process temperature in the chamber 110 to less than 700 ° C. resulted in a significant drop in productivity. As a result, if a general chemical vapor deposition method is used, it is essential to maintain the process temperature at 700 ° C. or higher, and thus thermal shock applied to the wafer is inevitable.

In addition, Figure 4 is a pressure of 18 Torr and the reaction region of the chamber 110 at a fixed state of 650 ℃, while adjusting the temperature of the gas pretreatment unit 160 according to the present invention to pass through the NH ₃ reaction gas of 1000sccm each , A graph showing a comparison result of etching the Si ₃ N ₄ thin film reacted with 50 sccm SiH ₄ source gas using H ₃ PO ₄ at a temperature of 160 ° C. for 270 seconds.

At this time, the horizontal axis of the graph shows the temperature of the gas pretreatment unit 160 according to the present invention passed through the NH ₃ reactor body, the vertical axis represents the etch rate per minute, the bar graph shown by the dotted line on the right through the general semiconductor manufacturing apparatus In the same condition, that is, 1000 sccm of NH ₃ and 50 sccm SiH ₄ are directly injected into the chamber 110 having a pressure of 18 Torr, and the temperature of the first heater 122 in the chuck 120 is controlled to 750 ° C. The etching rate of the thin film was exposed to H ₃ PO ₄ for 270 seconds at a temperature of 160 ℃.

By using the thin film deposition apparatus including the gas pretreatment unit 160 according to the present invention, if the temperature of the heat generating unit 160 of the gas pretreatment unit 160 is controlled to a temperature of about 900 ° C., the reaction region of the chamber 110 is provided. Even if the temperature is reduced to 600 ° C or more and 700 ° C or less, preferably 650 ° C, it is confirmed that the film has the same characteristics as a thin film under a general reaction temperature of 750 ° C.

In summary, the most correct embodiment of the present invention preferably distributes the control flow rates of the first gas flow control device 144 and the second gas flow control device 145 in a similar manner. In addition to minimizing the thermal shock to the), it is possible to realize a thin film with excellent productivity and film quality.

When the thin film deposition method according to the present invention described above is described in order with reference to FIG. 2 described above, the first heater 122 generates heat by first heating the wafer 5 while the wafer 5 is seated on the upper surface of the chuck 120. 5) is heated to an appropriate temperature. At this time, the heat generation temperature of the first heater 122 is naturally low compared to the general chemical vapor deposition method.

Meanwhile, the first and second gases S1 and S2 stored in the gas material supply unit 140 are appropriately selected according to the type of the thin film so that the first and second gas flow control devices 144 and 145 and the third gas are respectively. The flow rate is controlled by the flow rate control device 148, and the first gas flow rate control device 144 applies a part of the first gas S1 to the gas pretreatment unit 160. At this time, a portion of the first gas introduced into the gas pretreatment unit 160 is activated in the form of a radical while passing through micropores between the fillers heated from the second heater 152, referring to FIG. 3A or 3B. 110).

Since the activation energy of the activated radical-type gaseous substance is very low, it is possible to induce an easy chemical reaction even if the process temperature is significantly lower than in the general case, and the first gas flow control device 144 ) And the control flow rate of the second gas flow control device 145 is appropriately adjusted so that the first gas in the gaseous state, the first gas in the form of radicals, and the second gas coexist in the reaction region of the chamber 110.

Through the chemical reaction of these gaseous substances, the reaction product is laminated on the wafer 5 as a thin film.

At this time, for the safety of the process, although not shown in the drawings, it is also possible to install a predetermined cooling device to block the heat generated from the second heater (160a-1) to the outer surface of the gas pretreatment unit 160 according to the present invention, It will be apparent to those skilled in the art that the mounting method and the number of the gas pretreatment unit 160 can be adjusted according to the type of the thin film or the reaction gas.

In addition, in the semiconductor manufacturing apparatus including the gas pretreatment unit 160 according to the present invention described above, the scope of application is limited to the apparatus for chemical vapor deposition, which is used to process a wafer through a chemical reaction of a gaseous material under a high temperature environment. It will be apparent to those skilled in the art that the present invention can be applied to all processes of semiconductor manufacturing, for example, atomic layer deposition (ALD) or plasma chemical vapor deposition.

Generally, a method of heating at least one or more of a plurality of gaseous materials used for thin film deposition into a chamber has been already introduced, but these all prevent the liquefaction of the gas when the gas is easily liquefied at room temperature, or It has a limited purpose to increase the vapor pressure of a liquid. In addition, these are limited heat treatments in which the heating temperature is also not exceeding 300 ° C., which will be completely different in terms of the object, effect, and construction of the present invention.

Particularly, the present invention provides a gas pretreatment unit including a second heater that generates heat at a temperature of about 300 ° C. to 2000 ° C., and a filler having a plurality of micropores connected to each other around the second heater. As it can be effectively activated, the thin film deposition temperature can be significantly lowered, thereby improving the thin film while minimizing thermal shock applied to the wafer.

In addition, the present invention has an advantage that can easily be applied to the general semiconductor manufacturing process by providing a gas pretreatment having a simple structure, in particular the amount of gas activated by appropriately adjusting the pressure of the first and second gas flow control device It can freely adjust the productivity and quality of the thin film has the advantage that can be freely adjusted.

In particular, the second heater embedded in the gas pretreatment unit according to the present invention is provided in the same manner as the first heater of the resistance heating method mounted inside a general chuck, so that its power can be shared, thereby simplifying the manufacturing cost and reducing the manufacturing cost. Have In addition, the filling surface inside the gas pretreatment part ensures the maximum contact surface area so that heat can be effectively transmitted even when the injection pressure of the gaseous material is high. This enables reliable activation, and is particularly stable at high temperatures. Phosphorus ceramics, etc. are used to enable a more stable process.

In addition, the gas pretreatment unit according to the present invention can be installed by adjusting the number and configuration according to the gas injected into the chamber, the heating temperature of the heater built therein has a variable range of about 300 ℃ to 2000 ℃ It has the advantage that can be adjusted according to the type of thin film or the characteristics of the gaseous material to be deposited.

Claims (23)

And a chamber for mounting a chuck having a wafer heating means therein and a gas supply unit for supplying a plurality of gases into the chamber, wherein the thin film is formed on the wafer through a chemical reaction between the plurality of gases in the chamber. As a thin film deposition apparatus for depositing, The gas supply unit, A first gas storage device storing a first gas; A first connecting pipe and a second connecting pipe connecting the first gas storage device and the chamber; A first gas flow rate adjusting device and a second gas flow rate adjusting device for respectively controlling the flow rates of the first gas flowing through the first connecting pipe and the second connecting pipe; A second gas storage device for storing a second gas; A third connecting pipe connecting the second gas storage device and the chamber; A third gas flow rate adjusting device for controlling a flow rate of the second gas flowing through the third connecting pipe; The gaseous material is installed in the first connection pipe, and includes a heater generating heat of 300 ° C. or more and 2000 ° C. or less therein, and a packing material arranged to surround the heater and having a plurality of connected micropores. Radical activated gas pretreatment through a number of connected microporous structures Thin film deposition apparatus comprising a The method according to claim 1, The gas supply unit, At least one third gas storage device for storing a third gas; At least one fourth connecting pipe connecting the third gas storage device to the chamber; At least one fourth gas flow rate adjusting device for controlling the flow rate of the third gas flowing through the fourth connecting pipe Thin film deposition apparatus further comprising The method according to claim 1, The first connector, the second connector and the third connector is a thin film deposition apparatus connected to the chamber by one inlet tube The method according to claim 1, The filling material is a thin film deposition apparatus which is a fine ball of ceramic material having a diameter of 2mm or less The method according to claim 1, The filling material is a thin film deposition apparatus which is a mesh of ceramic material The method according to claim 1, The heater is a thin film deposition apparatus that generates heat in a resistance heating method The method according to claim 6, The heater is a thin film deposition apparatus connected to the same power source as the wafer heating means of the chuck The method according to claim 1, The first gas is at least one selected from NH ₃ , N ₂ O, O ₂ , the second gas is SiH ₄ , Si ₂ H _{6 A} thin film deposition apparatus The method according to claim 1, The flow rate of the first gas passing through the first connecting pipe and the flow rate of the first gas passing through the second connecting pipe are the same. A thin film deposition method for depositing a thin film on a wafer located inside a chamber through chemical reaction of a plurality of gases introduced into at least one connector, A part of the first gas is introduced into the chamber after heat treatment at a temperature of 300 ° C. or more and 2000 ° C. or less in the first connection pipe, and the rest of the first gas is introduced into the chamber without heat treatment through the second connection pipe, and the second gas Is a thin film deposition method which is introduced into the chamber through the third connection pipe and deposits a thin film on the wafer through chemical reaction of these gases. The method according to claim 10, The heat treatment step, The gaseous material may include a filler installed inside the first connection pipe and generating a heat of 300 ° C. or more and 2000 ° C. or less, and a filler having a plurality of connected micropores arranged to surround the heater. A thin film deposition method performed by a gas pretreatment unit which is activated in a radical form while passing through connected micropores of the gas, and is introduced into the chamber. The method according to claim 11, The filler is a thin film deposition method of fine balls of a ceramic material of less than 2mm in diameter The method according to claim 11, The filler is a thin film deposition method that is a mesh of ceramic material The method according to claim 11, Thin film deposition method in which the heater generates heat by resistance heating The method according to claim 14, The heater is a thin film deposition method connected to the same power source as the wafer heating means installed in the chuck mounted in the chamber The method according to claim 10, The first gas is at least one selected from NH ₃ , N ₂ O, O ₂ , the second gas is SiH ₄ , Si ₂ H _{6 It} is one of the thin film deposition method. The method according to claim 10, The flow rate of the first gas passing through the first connecting pipe and the flow rate of the first gas passing through the second connecting pipe are the same. delete delete delete delete delete delete