TW471238B - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- TW471238B TW471238B TW88113680A01A TW471238B TW 471238 B TW471238 B TW 471238B TW 88113680A01 A TW88113680A01 A TW 88113680A01A TW 471238 B TW471238 B TW 471238B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
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- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
471238471238
本案係8 8 1 1 3 6 8 0號專利申請案(以下稱母案 )之追加(一),為一種發光元件及製程,尤指一種具碳微 管發射源的發光元件及製程。 如母案所述,尚焭度、省電型的顯示器可以應用在許 多需要傳達訊息的機構上,例如大型運動場的分數板、公 共場所的電子顯示看板,高速公路上的路標、路況顯示 等’用途非常廣泛。應用在大型電子看板的顯示屏幕是由 許多小發光元件組合而成的顯示技術,目前製作這些小發 光元件的技術有白熾燈泡(incandenscent lightThis case is an addition (1) to the patent application No. 8 1 1 3 6 80 (hereinafter referred to as the mother case), which is a light emitting element and process, especially a light emitting element and process having a carbon micro tube emission source. As mentioned in the mother case, the display of high efficiency and power saving can be applied to many organizations that need to convey information, such as score boards in large sports stadiums, electronic display boards in public places, road signs on highways, traffic conditions displays, etc. ' It is very versatile. The display screen used in large electronic sign boards is a display technology composed of many small light-emitting elements. Currently, the technology for making these small light-emitting elements is incandenscent light.
bulbs) ’ 小陰極射線管(smaii cathode ray tube CRT), 南壓真空螢光管(h i g h v o 11 a g e v a c u u m f 1 u o r e s c e n t display HVVFD),小螢光燈(smaii fluorescent Ump), 與發光二極體(light emitting diode)等五種。 白熾燈泡是利用燈泡中燈絲加熱發光的原理,由於發 光時燈泡中燈絲(鎢絲材料)的溫度必需保持在9 〇 〇〜丨5 〇 〇 oC,因此利用白熾燈泡組成的顯示看板非常耗電,能源效 率(energy efficiency)非常低。同時以白熾燈泡僅發射 偏黃的白光(yellowish white),因此欲組成一個彩色顯 示看板非常困難。bulbs) 'small cathode ray tube (smaii cathode ray tube CRT), high pressure vacuum fluorescent tube (highvo 11 agevacuumf 1 uorescent display HVVFD), small fluorescent lamp (smaii fluorescent Ump), and light emitting diode (light emitting diode ) Wait for five. Incandescent light bulbs are based on the principle of heating and emitting light from the filament in the light bulb. Since the temperature of the filament (tungsten wire material) in the light bulb must be maintained at 900-500 ° C during light emission, the display panel composed of incandescent light-bulbs is very power-hungry. Energy efficiency is very low. At the same time, an incandescent light bulb emits only yellowish white light, so it is very difficult to form a color display board.
陰極射線管系利用電子束撞擊螢光粉發光,這種發光 方式在發光效率(luminescent efficiency)上非常高,因 此,理論上CRT的能源效率也應該很高,然而,在CRT中電 子的來源是加熱金屬表面塗佈容易釋出電子的氧化物(如 氧化鋇)所製成的的熱陰極(hot cathode),當熱陰極加The cathode ray tube system uses an electron beam to strike the phosphor to emit light. This type of light emission is very high in luminescent efficiency. Therefore, in theory, the energy efficiency of CRT should also be very high. However, the source of electrons in CRT is A hot cathode made by coating an oxide (such as barium oxide) that easily releases electrons on the surface of a heated metal.
第4頁 471238 五、發明說明(2) 熱時’這些氧化物便能釋放出熱電子(hot electron)。由 於產生電子的電子槍為點電子源(point electron source),因此欲得到高的電子密度就必需提高電子搶的 溫度亦即提高電子槍的電流,如此在以高亮度為主要功能 的顯示元件中,提高電子搶的電流勢必導致電子搶壽命變 短’同時增加能源消耗。另一方面,CRT本身體積龐大, 厚、重的缺點使它在組合成大型的顯示看板時受到限制, 無法組成可以顯示精細畫面的顯示屏幕。以小C r τ所組成 的顯示屏幕非常的耗電,以目前產品中小CRT組成的25m χ 4 0m顯示看板能源消耗達20 0 〇KW,雖然僅達白熾燈泡的 1 /1 0,但是由於點電子源的限制而無法發揮螢光粉高發光 效率的特性。 高壓真空螢光管(HVVFD)就是將CRT中的點電子源改進 成為線電子源(line electron source)。線電子源是將容 易發射電子的氧化物塗佈在細鎢絲(tungsten wire)上, 由於線型的電子源可以發射出許多熱電子以撞擊螢光粉發 光,因此可以大幅改進CRT在能源消耗上的缺點。同時 HVVFD可以在一個發光單元上塗佈出紅、藍、綠三原色, 因此以HVVFD組合彩色顯示屏幕比CRT更容易,在解析产上 也比CRT高。 & 儘管以HVVFD所組成的顯示屏幕特性上與能源消耗上 比小CRT組合成的屏幕好,但是,HVVFD構造複雜、製作非 常困難,同時以鎢絲加熱來激發熱電子仍然消耗大量的能 源,以目前Η V V F D所組合而成的2 5 m X 4 0 m大小的顯示屏Page 4 471238 V. Description of the invention (2) When hot, these oxides can release hot electrons. Because the electron gun that generates electrons is a point electron source, it is necessary to increase the temperature of the electron gun, that is, to increase the current of the electron gun, in order to obtain a high electron density. The current of the electronic grab will inevitably lead to a shorter life of the electronic grab and increase energy consumption. On the other hand, the CRT itself is bulky, and the shortcomings of being thick and heavy make it limited when combined into a large display panel, and cannot form a display screen that can display fine pictures. The display screen composed of small C r τ consumes a lot of power, and the 25m χ 4 0m composed of small CRTs in current products shows that the energy consumption of Kanban is up to 20 KW, although it only reaches 1/10 of incandescent bulbs, but because of Due to the limitation of the electron source, the high luminous efficiency of the phosphor cannot be exhibited. High-pressure vacuum fluorescent tube (HVVFD) is to improve the point electron source in the CRT into a line electron source. The wire electron source is coated with an oxide that easily emits electrons on a thin tungsten wire. Since the linear electron source can emit many hot electrons to hit the phosphor to emit light, the CRT can greatly improve the energy consumption. Shortcomings. At the same time, HVVFD can coat the three primary colors of red, blue, and green on a light-emitting unit. Therefore, combining HVVFD with a color display screen is easier than CRT, and its analytical output is higher than CRT. & Although the display screen composed of HVVFD has better characteristics and energy consumption than a screen composed of a small CRT, HVVFD has a complicated structure and is very difficult to manufacture. At the same time, the heating of tungsten electrons with tungsten filaments still consumes a lot of energy. 2.5 m X 4 0 m display with current Η VVFD combination
第5頁 471238 五、發明說明(3) 幕,消耗電能高仍然達1,00OkW左右。 利用紫外光激發螢光粉發光製成的小螢光燈也可以組 成一個顯示屏幕’但是目前螢光燈元件受限於顏色無法爹 樣化,同時每個螢光燈尺寸難以縮小的1 line/mm,以— 下,因此要形成精細的晝面極為困難。非榮光性的發光二 級體(light emitting diode LED)也被廣泛的應用到大型 的顯示屏幕上。雖然目前已經開發出可以分別發出紅、 藍、綠三原色的材料,但是高亮度綠與藍色材料製作困 難,同時相較於螢光粉的發光效率可高達30 im/w,LED的 發光效率不到ίο im/w,除了發光效率低以外,LED有嚴重 的視角(view angle)問題,造成在大屏幕上使用上的缺 陷。 、 母案更提到,習用的發光元件有下列缺點: (1)效率不高,發光效率太低,無法提供於大屏 的使用。 (2 )耗能源,因為發光元件的發光特性,會發生能 源消耗極大的情形。 (3 )解析度低,受限於發光元件的排列以及顏色, 所以形成精細畫面有其困難性。 母案即針對習用之缺失’提出一改善的發光元件,對 現有元件的優缺點進行系、統性的分析,並且引人新材料, =新結構發明出具有高亮度、高解析度的顯示元件,此元 : = 傳遞包括靜態文字訊息與動態影像訊息的 大型電子看板(electric b〇ard)。Page 5 471238 V. Description of the invention (3) Act, the high power consumption is still about 1,000OkW. A small fluorescent lamp made by using ultraviolet light to excite fluorescent powder can also form a display screen. However, the current fluorescent lamp components are limited by the color, and the size of each fluorescent lamp is difficult to reduce. 1 line / mm, below, so it is extremely difficult to form a fine daytime surface. Non-glowing light emitting diode LEDs are also widely used in large display screens. Although materials that can emit three primary colors of red, blue, and green have been developed, the production of high-brightness green and blue materials is difficult. At the same time, the luminous efficiency can be as high as 30 im / w compared to phosphors. To ίο im / w, in addition to low luminous efficiency, LEDs have serious view angle problems, causing defects in the use on large screens. The mother case also mentioned that the conventional light-emitting elements have the following disadvantages: (1) The efficiency is not high, the light-emitting efficiency is too low, and it cannot be used for large screens. (2) Energy consumption. Due to the light-emitting characteristics of light-emitting elements, energy consumption may occur extremely. (3) The resolution is low and it is limited by the arrangement and color of the light emitting elements, so it is difficult to form a fine picture. The mother case is to propose an improved light-emitting element based on the lack of custom. It analyzes the advantages and disadvantages of the existing elements systematically and systematically, and attracts new materials. The new structure invents a display element with high brightness and high resolution. , This element: = large electric signboard (electric b〇ard) including static text messages and moving image messages.
471238 88113680A01 年月日 修正 亍的發光元件分析,我們發現利用電子撞擊螢 光粉的發光效率高於其它的發光技術,因此,小CRT與 HVVFD在發光的效率上比白鐵燈泡、發光二級體等發光元 件高。然而、小CRT與HVVFD元件中,利用加熱方式產生熱 電子的方法是造成能源消耗的主要原因。欲降低此一能源 的消耗’場效應(field emission)的冷陰極(cold cathode)便是最佳的選擇。 1 995 年,Rinzler 在” A simple and robust eletron beam source from carbon nanotubes” by Philip G Collins and A Zetth Appl. Phys. Le 11. 6 9 ( 1 3), 1 9 9 6 中首先知出以石厌材料所組成的碳微管(carbon nan〇-tube) 具有放射電子的特性,1997年,Wang等人更在,,Field Emission from nanotubes bundle emitters at low field" by Q. H. Wang, T. D. Corrigan, J. Y. Dai and R. P. H·Chang,A.R·Krauss,Appl· Phys· Lett,70(24),1997 中 提出只要在0·8 V/ /zm的低電場下碳微管即可釋出大量的 電子。因此’只要結合碳微管在低電場下即可釋出電子的 特性與螢光粉高效率的發光特性就可以製作出高亮度,省 能源’南精密度的發光元件’這種發光元件可以組合成可 以顯示單色或是彩色的顯示屏幕,以顯示包括靜離文字, 動態訊息的電子看板。 母案即揭示一種利用碳微管微電子發射源,發射電子 以撞擊螢光粉而達到發光目的的元件,同時利用這種元件 高亮度、省能源的特性組成一種省電,單色或多色或是全471238 88113680A01 Corrected the analysis of luminous elements of thorium, we found that the luminous efficiency of using electrons to strike phosphors is higher than other luminous technologies. Therefore, small CRTs and HVVFDs are more efficient than white iron bulbs, light-emitting diodes, etc. The light emitting element is high. However, in small CRT and HVVFD components, the method of generating thermionic electrons by heating is the main cause of energy consumption. A cold cathode that wants to reduce this energy consumption ’field emission is the best choice. In 1 995, Rinzler first learned of Shi Nai in "A simple and robust eletron beam source from carbon nanotubes" by Philip G Collins and A Zetth Appl. Phys. Le 11. 6 9 (1 3), 1 9 9 6 The carbon micro tube (carbon nan〇-tube) composed of the material has the characteristics of emitting electrons. In 1997, Wang et al., Field Emission from nanotubes bundle emitters at low field " by QH Wang, TD Corrigan, JY Dai and RP H · Chang, AR · Krauss, Appl. Phys · Let, 70 (24), 1997 proposed that as long as the carbon microtube can release a large number of electrons at a low electric field of 0.8 V / zm. Therefore, 'as long as the characteristics of carbon microtubes can release electrons under a low electric field and the high-efficiency light-emitting characteristics of fluorescent powder can be made high-brightness, energy-saving' South-precision light-emitting elements' such light-emitting elements can be combined It can display monochrome or color display screens to display electronic signboards including static text and dynamic messages. The mother case reveals a component that uses a carbon microtube microelectronic emission source to emit electrons to strike the phosphor to achieve the purpose of emitting light. At the same time, the high brightness and energy saving characteristics of this component are used to form a power-saving, single-color or multi-color Or all
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Aims 年7 ::: 8811368QAQ1 年 修正 立、發明說研15Γ 彩、高解析度的顯示屏幕,此屏幕可應用於顯示靜態圖文 資訊或是動態影像資訊的電子看板(electronic board)。 為達到上述目標,母案提出一種發光元件,係利用該 元件本體產生之一電子與一發光物質相互作用以產生一 光,包含:一發射結構,係具一發射源,該發射源係具一 碳微管,而該發射結構係藉由該發射源之該碳微管以產生 該電子,以及一發光結構,係用以接收該電子產生該光。 其中該發射結構係包含一閘極,更包含一導線。我們可以 利用該發射源與該閘極間之一電場以產生該電子。而該電 子係由該碳微管所發射。該發光結構係為一佈滿該發光物 質之玻璃板。而且該發光物質係為一螢光粉。在發光物質 上可以有一鋁層所覆蓋。 另外,母案更提出一種發光元件之發光方法,係利用 該發光元件本體產生之一電子與一發光物質相互作用以產 生一光,包含下列步驟: 板供一碳微管,施加一電場於該碳微管上,以產生該 電子;以及使該電子加速與該發光物質產生一相互作用, 藉由該發光物質之特性產生該光。而該電子係由該電場所 激發產生。我們所使用的該發光物質則為一螢光粉。光則 是利用該電子撞擊該發光物質所產生之作用。 還有一種發光元件之製程,係利用該發光元件本體產 生之一電子與一發光物質相互作用以產生一光,包含下列 步驟:形成一發射結構,該發射結構係具有一碳微管,以 產生該電子;於該發射結構上形成一間隔區域;以及於該Aims Year 7 ::: 8811368QAQ Year 1 Amendment 15Γ color, high-resolution display screen. This screen can be applied to electronic boards that display static graphic information or dynamic image information. In order to achieve the above objective, the mother case proposes a light-emitting element that uses an electron generated by the element body to interact with a light-emitting substance to generate a light, including: an emission structure with an emission source, the emission source with an Carbon microtubes, and the emission structure generates the electrons through the carbon microtubes of the emission source, and a light emitting structure is used to receive the electrons to generate the light. The emitting structure includes a gate and a wire. We can use an electric field between the emitter and the gate to generate the electron. The electrons are emitted by the carbon microtubes. The light-emitting structure is a glass plate covered with the light-emitting substance. The luminescent substance is a fluorescent powder. The luminescent substance may be covered by an aluminum layer. In addition, the mother case also proposes a light emitting method of a light emitting element, which uses an electron generated by the light emitting element body to interact with a light emitting substance to generate a light, which includes the following steps: a plate is provided with a carbon microtube, and an electric field is applied to the Carbon microtubes to generate the electrons; and accelerating the electrons to have an interaction with the luminescent substance to generate the light by the characteristics of the luminescent substance. The electrons are generated by the electric field. The luminescent substance we use is a phosphor. Light uses the electrons to strike the luminescent substance. There is also a process for producing a light-emitting element, which uses an electron generated by the light-emitting element body to interact with a light-emitting substance to generate a light, which includes the following steps: forming an emission structure having a carbon microtube to generate The electrons; forming a spacer region on the emission structure; and
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Mtu 88113680A01 年__.月 曰_ 間隔區間上形成一發光結構,該發光結構上係塗有該發光 物質,以於該電子撞擊該發光物質時,發出該光。 其中該發射結構之形成係包含下列步驟: (A1 )形成一基板; (A2 )形成一發射源於該基板上;以及 (A3)形成一閘極於該發射源上。 步騍(A1)中之該基板係為一玻璃基板或陶瓷基板。 而步驟(A2 )中之該發射源係包含該碳微管與一導線。我 們先成長該導線於該玻璃基板上。然後該碳微管再成長於 該導線上。其中該間隔區域係利用一間隔器所形成,用以 將該發射結構與該發光結構隔開。 而該發光結構之形成係包含下列步驟: (B1)形成一發光層;以及 (B2)形成一紹層。 步驟(B1)之該發光層係成長該發光物質於一玻璃板 上0 該發光物質係為一螢光粉。而步驟(B2)之該鋁層係 成長於該發光物質上。 θμ 另外’母案更可包含:一發射源,藉以產生該電子; 一閘極’相鄰於該發射源,具一第一金屬層及一第一絕緣 層,係界定出複數個發光點,並藉由控制該閘極使—特定 發光點之位址得以通過該電子;以及一發光結構,相鄰於 該閘極,藉以接收該電子,與該發光物質產生該光。、 該閘極為一金屬網狀結構狀結構,具一xy矩陣定址能Mtu 88113680A01 year __. Month __ A light-emitting structure is formed on the interval, and the light-emitting structure is coated with the light-emitting substance, so that when the electron hits the light-emitting substance, the light is emitted. The formation of the emission structure includes the following steps: (A1) forming a substrate; (A2) forming an emission source on the substrate; and (A3) forming a gate on the emission source. The substrate in step (A1) is a glass substrate or a ceramic substrate. The emission source in step (A2) includes the carbon microtube and a wire. We first grow the wire on the glass substrate. The carbon microtubes are then grown on the wire. The spacer region is formed by a spacer to separate the emitting structure from the light emitting structure. The formation of the light emitting structure includes the following steps: (B1) forming a light emitting layer; and (B2) forming a shading layer. In step (B1), the light-emitting layer is grown on a glass plate. The light-emitting substance is a fluorescent powder. The aluminum layer in step (B2) is grown on the luminescent substance. θμ In addition, the mother case may further include: an emission source to generate the electrons; a gate electrode adjacent to the emission source, having a first metal layer and a first insulating layer, defining a plurality of light emitting points, And by controlling the gate, an address of a specific luminous point can pass through the electron; and a light-emitting structure, which is adjacent to the gate, receives the electron and generates the light with the light-emitting substance. The gate is a metal mesh structure with an xy matrix addressing capability.
471238 五、發明說明(7) 力之發射電子源,以控制該特定發光點之明與暗。該金屬 網狀結構係包含一金屬層。該電子係利用該發射源與該閘 極間之一電場產生。該發射源係為一碳微管,藉以發射該 電子。471238 V. Description of the invention (7) Forced electron source to control the light and darkness of the specific light emitting point. The metal mesh structure includes a metal layer. The electron system is generated by an electric field between the emission source and the gate. The emission source is a carbon micro tube, thereby emitting the electron.
5亥複數個發光點係形成為一 χ y陣列。該閘極更包含一 第二金屬層,使該絕緣層介於該第_金屬層及該第二金屬 層之間。又,該閘極更包含一第二絕緣層及一第三金屬 層,該第二絕緣層係相鄰於該第二金屬層,而該第三金屬 層喺相鄰於該第二絕緣層,使得該第二絕緣層介於該第二 金屬層及該第三金屬層之間。 又,母案之發光元件,亦可包含:一發射源,藉以產 生該電子;一閘極,相鄰於該發射源,藉以與該發射源界 定出複數個發光點,並藉由控制該閘極使一特定發光點之 ,址得以通過該電子;以及一發光結構,相鄰於該閘極, 藉以接收該電子,與該發光物質產生該光。 —^,母案之發光元件,更可包含:一發射源,藉以界 疋出複數個發光點,並藉由控制該發射源使一特定發光點 之位址得以發射一電子;一閘極,相鄰於該發射源,使一 特定發光點之位址得以通過該電子;以及一發光结構,相A plurality of light emitting points are formed as a χ y array. The gate further includes a second metal layer, so that the insulating layer is interposed between the first metal layer and the second metal layer. The gate further includes a second insulating layer and a third metal layer. The second insulating layer is adjacent to the second metal layer, and the third metal layer is adjacent to the second insulating layer. The second insulation layer is interposed between the second metal layer and the third metal layer. In addition, the light emitting element of the mother case may also include: an emission source to generate the electrons; a gate adjacent to the emission source, thereby defining a plurality of light emitting points with the emission source, and controlling the gate The electrode enables a specific light emitting point to pass the electron; and a light emitting structure is adjacent to the gate, thereby receiving the electron and generating the light with the light emitting substance. — ^, The light emitting element of the mother case may further include: an emission source, by which a plurality of light emitting points are defined, and by controlling the emission source, an address of a specific light emitting point can emit an electron; a gate, Adjacent to the emission source, an address of a specific light emitting point can pass through the electron; and a light emitting structure, phase
鄰於該閘,,藉以接收該電子,與該發光物質產生該光。 母案貫施例一:二極紅、藍、綠發光元件 母案具有紅(R)、藍(G)、綠(β)三原色的發光元件其 結構如圖一所示。 圖中上面板13,ΒΜ11是增加對比的black㈣忖。Adjacent to the gate, the electron is received and the light is generated with the luminescent substance. Example 1 of the mother case: two-pole red, blue, and green light-emitting elements The mother case has three primary colors of red (R), blue (G), and green (β). The structure of the light-emitting element is shown in Figure 1. The upper panel 13, BM11 in the figure is black㈣ 忖 for added contrast.
471238471238
R、G、B、分別為紅、綠、藍的螢光粉〗2,在上面板丨3上 還有一層可以增加反射的鋁層丨4。下面板是在玻璃基板工7 上形成導電線路(conductive line)i9,導電線路19上就 是碳微管1 8,碳微管1 8上架上多孔導體製成的網狀結構作 為柵極16。上下面板是以玻璃作為以%^15隔開,整個單 元結構如CRT,VFD —般密閉在一個真空環境中。 在此結構中柵極1 6與碳微管1 8之間只要施加一個能夠 使峻微管18釋出電子的電場(i.e· 〇.8 v/em),電子便能 夠攸奴从管1 8中釋出,當陽極的營光板施加一個高電壓 (i· e· 50 0 0V),則碳微管18釋出的電子便受到陽極電場作 用穿過多孔性的柵極1 6撞擊螢光粉1 2而達到發光的目的。 碳微管18下層的導電層19可以藉由輸入的電壓來達到控制 碳微管1 8是否發射電子而達到開-關的效果。將許多單位 發碳微管18光元件組合即可以達到可以驅動(address)的 大型彩色顯示屏幕。 由於碳微管1 8在低電壓即可釋出電子,因此可以大幅 改進CRT與HVVFD中熱電子消耗能源的缺點。同時在一個單 元中就可以同時具備紅、藍、綠等三種原色,因此本元件 可以組合成省能源、可達全彩的電子看板。 母案實施例二 圖二為可以X,y二維控制的碳微管1 8發光元件設計。 在此結構中’將柵極1 6設計成如圖左邊的放大圖2 2。 放大圖中的柵極1 6結構是在材料上、下面分別塗佈上導電 的材料如以網印的方法印上銀膠圖案而得到第一金屬層R, G, and B are red, green, and blue phosphors, respectively. There is also an aluminum layer on the upper panel, which can increase reflection. The lower plate is formed with a conductive line i9 on the glass substrate 7. The conductive line 19 is a carbon micro tube 18, and the carbon micro tube 18 is a mesh structure made of a porous conductor as a grid 16. The upper and lower panels are separated by glass as% ^ 15, and the entire unit structure is sealed in a vacuum environment like CRT and VFD. In this structure, as long as an electric field (ie · 0.8 v / em) is applied between the grid 16 and the carbon microtube 18 to cause the microtube 18 to release electrons, the electrons can slave the tube 1 8 It is released in the medium. When a high voltage (i · e · 50 0 0V) is applied to the anode light-emitting plate, the electrons released by the carbon microtubes 18 are subjected to the anode electric field to pass through the porous grid 16 to hit the phosphor. 1 2 to achieve the purpose of emitting light. The conductive layer 19 under the carbon microtube 18 can be controlled by the input voltage to control whether the carbon microtube 18 emits electrons or not. The combination of many units of carbon emitting microtubes and 18 light elements can achieve a large color display screen that can be driven. Since the carbon microtubes 18 can release electrons at low voltage, the shortcomings of the energy consumption of hot electrons in CRT and HVVFD can be greatly improved. At the same time, three primary colors of red, blue, and green can be provided in one unit at the same time, so this component can be combined into an energy-saving, full-color electronic signboard. Example 2 of the mother case Figure 2 shows the design of a carbon micro tube 18 light-emitting element that can be controlled in two dimensions by X, y. In this structure, the gate 16 is designed as shown in the enlarged view 22 on the left. The gate 16 structure in the enlarged figure is coated with a conductive material on the material and the bottom, for example, a silver paste pattern is printed by a screen printing method to obtain a first metal layer.
第11頁 471238 五、發明說明(9) 221與第二金屬層222。第一金屬層221與第二金屬層 222之間則有絕緣層223所隔開。 第一金屬層2 2 1的作用是提供一個可以激發微碳管1 8 發射電子的電場如0.8V/#m,而第二金屬層222的作用是 控制發射出來的電子是否可以通過孔洞2 2 4而達到開關的 目的。例如當第二金屬層222的導線與底板中導線L21垂直 時就可以達到X,y,矩陣定址(x,y,matrix address)的 控制控制能力。其控制如下圖三示意圖所示; 底板中的L導線2 1輸入正電壓時對應的整條線可以發 射出電子,但是只有當第二金屬層線31也同時是輸入正電 壓時,發射出來的電子才得以穿過柵極1 6而撞到相對應的 螢光粉1 2而使螢光粉1 2發光。 由於同時可以在一個單元做X, y矩陣式的定址驅動, 因此在一個發光元件上就可以製作許多紅、藍、綠的畫數 (pixel),如此一來,本元件就可以輕易的達到} i ine/mm 的解析度。以此高解析度組合而成的顯示屏幕可以用來顯 示出全彩與動態的資訊。 圖四為各種閘極的示意圖。圖四(a)為閘極的雛型, 係為一金屬網,這類設計可應用在最簡單的發光元件上, 能發出一團不必定址的光,或是由陰極定址的發光元件。 圖四(b)閘極可由一金屬層41及一絕緣層42構成,如此一 來則可控制金屬層41使特定位址的條帶發光。圖四(c)為 圖四(b)的變更設計,金屬層41與絕緣層42上下位置對 調。圖四(d)為一改良型設計,含絕緣層42、第一金層層Page 11 471238 V. Description of the invention (9) 221 and second metal layer 222. The first metal layer 221 and the second metal layer 222 are separated by an insulating layer 223. The role of the first metal layer 2 2 1 is to provide an electric field such as 0.8 V / # m that can excite the micro-carbon tube 1 8 to emit electrons, and the role of the second metal layer 222 is to control whether the emitted electrons can pass through the hole 2 2 4 to achieve the purpose of switching. For example, when the wire of the second metal layer 222 is perpendicular to the wire L21 in the bottom plate, the control capability of X, y, matrix address (x, y, matrix address) can be achieved. Its control is shown in the schematic diagram in Figure 3 below. The L wire 21 in the bottom plate can emit electrons when the corresponding positive line is input, but only when the second metal layer line 31 is also input a positive voltage at the same time. The electron was able to pass through the grid 16 and hit the corresponding phosphor 12 to cause the phosphor 12 to emit light. Because X, y matrix addressing can be driven in a unit at the same time, many red, blue, and green pixels (pixels) can be produced on a light-emitting element. In this way, this element can be easily reached} i ine / mm resolution. The display screen combined with this high resolution can be used to display full color and dynamic information. Figure 4 is a schematic diagram of various gates. Figure 4 (a) is the prototype of the gate, which is a metal mesh. This type of design can be applied to the simplest light-emitting element, which can emit a group of light that does not need to be addressed, or a light-emitting element that is addressed by the cathode. The gate in Fig. 4 (b) can be composed of a metal layer 41 and an insulating layer 42. In this way, the metal layer 41 can be controlled to emit light at a specific address band. Fig. 4 (c) shows the modified design of Fig. 4 (b). The upper and lower positions of the metal layer 41 and the insulating layer 42 are reversed. Figure 4 (d) is an improved design, including the insulation layer 42 and the first gold layer
第12頁 471238 五、發明說明(ίο) 411及第二金屬層412,這樣的設計可以使第一金屬層411 及第二金屬層界定出xy陣列’驅動特定位置的發光點發 光。圖四(e)為進一步的改良’含第一絕緣層421、第二絕 緣層422、第一金屬層411、第二金屬層412及第三金屬層 413,其中第一金屬層411與第二金屬層412可定出xy位址 的發光點,而第三金屬層則可產生聚焦(f 0 C U S )的作用, 使發射出的電子集中在一光點上’而不會發散開來。 上述的金屬層可以為紹層或銀層,生成的方法可以用 蒸鍍法或印刷法來形成,而絕緣層的材料可以用陶莞或玻 璃。 圖五為各種定址的示意圖。若欲顯示出各種圖樣,則 必須藉由xy定址來達成。圖五(a)閘極驅動,定址的方式 是藉由閘極來達成。第一金屬層521控制χ座標,第二金屬 523層控制y座標,在二金屬層之間則有一絕緣層522。電 子源發出的電子則可藉由二層金屬層的定址,有選擇性地 從特定的位址通過,再與發光結構53上的螢光粉撞擊發出Page 12 471238 V. Description of the invention (411) and the second metal layer 412, such a design can make the first metal layer 411 and the second metal layer define an xy array to drive light emission at a specific position. FIG. 4 (e) is a further improvement including the first insulating layer 421, the second insulating layer 422, the first metal layer 411, the second metal layer 412, and the third metal layer 413, where the first metal layer 411 and the second metal layer 411 The metal layer 412 can determine the light emitting point of the xy address, and the third metal layer can generate a focus (f 0 CUS) function, so that the emitted electrons are concentrated on a light point without being scattered. The above-mentioned metal layer may be a Shao layer or a silver layer. The method of forming the metal layer may be formed by evaporation or printing, and the material of the insulating layer may be ceramic or glass. Figure 5 is a schematic diagram of various addressing. If various patterns are to be displayed, it must be achieved by xy addressing. Figure 5 (a) Gate drive. The addressing method is achieved by the gate. The first metal layer 521 controls the x-coordinate, the second metal 523 layer controls the y-coordinate, and there is an insulating layer 522 between the two metal layers. The electrons from the electron source can be selectively passed through a specific address through the addressing of the two metal layers, and then collided with the phosphor powder on the light emitting structure 53 to be emitted.
^ ^ if (b)為另一種閘極驅動,定址的方式是藉由閘極 的金屬層525定出以或乂)座標,而由發射源51的碳微管 5 1疋出y(或χ)座標,來定出特定發光點 制碳微管511及金屬層525之間的雷俨π放站— 控 工益U r ☆ 心间的電场即可使特定位址的 子發射至發光結構53上,以發出光點。 圖五(c)為陰極驅動,係 ,,.^ ^ ^係糟由發射源的結構來達成定 址的目的,在發射源51的面板 战疋 傲上有xy陣列的電子源材料^ ^ if (b) is another kind of gate drive, the addressing method is to determine the coordinates of the gate metal layer 525 or 乂), and the carbon microtube 5 1 of the emission source 51 疋 y (or χ ) Coordinates to determine the thunder π station between the carbon microtube 511 and the metal layer 525 made of a specific luminous point — control the electric field U r ☆ The electric field between the hearts can make the child at a specific address emit to the light emitting structure 53 Up to emit light spots. Figure 5 (c) shows the cathode drive. The structure of the emission source is used to achieve the addressing purpose. The panel of the emission source 51 is equipped with an xy array electron source material.
第13頁 471238 年 月 曰 修正 [^7 ^ ^ 施例為碳微管),吾人可將xy陣列的電子源 2料511以一控制電路5 6對控制信號s加以解碼,即可使特 定的電子源材料發射出電子,再由閘極52的吸引,射至 光結構以發出光點。 在,案中,我們可以得出下列結果··一、本案發光元 件八有馬效率,二、本案發光元件可以減低功率的消耗, 達到省f源的目標;三、本案發光元件具有高解析度。 仁疋母案閘極(參見圖二)的作法卻仍有不完善之 處’因為閘極架空於碳微管發光源之上,二者之間留^間 距’這在對位時,較難施實,且成本較高。 本追加案的目的即根據母案的技術缺點,加以改進, 使其閘極的製作更省成本,而且可解決對位上的問題。 為達上述目的,本追加案提出之發光元件,係在發射 結構上作改良,其發射結構係具一發射源及一閘極,該發 射源係具一碳微管層,該閘極係界定出複數個發光點,並 藉由控制該閘極以定出其中一特定發光點,而該電子係由 該發射源之該碳微管所產生,而該閘極係由一絕緣層及一 導電層所組成。 曰 如所ΐ之發光元件,其中該閘極之該導電層具有陰極 定址之能力’以控制該特定發光點之明與暗。 如所述之發光元件,其中該導電層^一金屬声。 另外’本ΐ =之發光元件之製程係利用該發光元件 本體產生之了電子與一發光物質相互作用以產生一光, 含下列梦驟· 第14頁 2001.07.06.014 471238 五、發明說明(12) 形成一發射結構,該發射結構係由一碳微管層、一絕 緣層及一導電層所形成,該碳微管係藉以產生該電子,而 由該絕緣層及該導電層係界定出複數個發光點; 於該發射結構上形成一間隔區域;以及 於該間隔區間上形成一發光結構,該發光結構上係塗 有該發光物質,以於該電子撞擊該發光物質日夺,發出該 光。 如所j之發光元件之製程’其中該發射 包含下列步驟: 〜取货、 提供一基板; 網印該碳微管層於該基板上; 形成該絕緣層於該碳微管層上; 形成該導電層於該絕緣層上; 形成一保護層於該導電層上, 層上,該圖案係界定出複數個使該導電ί裸=該保護 域; 守电嘴稞路於外的區 卜喷砂除去由該等區域所界定之導電層及 等區域所界定之碳微管層裸露於外,·以及、緣層,使該 除去該保護層以形成該發射結構。 如所述之發光元件之製程,其中 板或一陶瓷基板。 、系為一玻璃基 其中該導電層係為 其中該圖案係以—網印方 銀 如所述之發光元件之製程 谬、鎳膠或鉑膠等材料。 如所述之發光元件之製程 1^· 第15頁 471238 五、發明說明(13) 法形成。 如所述之發光元件之製程,其中該圖案係以一曝光顯 影方法形成。 本追加案得以藉由下列圖示及詳細說明,俾得一更深 入枝了解: 圖一:母案發光元件之結構。 圖二:母案發光元件之另一結構。 圖三:母案發光元件之控制方法。 圖四:母案各種閘極示意圖。 圖五:母案各種定址示意圖。 圖六:本追加案之閘極較佳實施例。 圖示主要標號說明如下: 11 BM(block ma t r i X ) 12 :螢光 粉 13 上面 板 14 : 在呂層 15 間隔 器(Spacer ) 16 :閘 極 17 玻璃 基板 18 : $反微 管 19 導電 線路 21 : 底板 中 導線L 22 閘極 放大圖 221 : 第一 -金屬層 222 • 發 — • 米— 二金屬層 223 : 絕緣層 2 2 4 :孔洞 3 1 :第二金屬層線 40:金屬網 41:金屬層 4 2 :絕緣層 4 1 1 :第一金屬層 412:第二金屬層413:第三金屬層 421 :第一絕緣層 422 :第二絕緣層Page 13, 471238, Revised [^ 7 ^ ^ The example is a carbon micro tube), we can decode the control signal s by the control circuit 5.6 of the electron source 2 511 of the xy array to make a specific The electron source material emits electrons, and is then attracted by the gate electrode 52 to the light structure to emit light spots. In this case, we can get the following results: 1. The light-emitting element in this case has eight horses efficiency. 2. The light-emitting element in this case can reduce power consumption and achieve the goal of saving f sources. 3. The light-emitting element in this case has high resolution. However, the method of the gate of the Ren's mother case (see Figure 2) is still imperfect. 'Because the gate is suspended above the carbon microtube light source, leaving a ^ space between the two.' This is more difficult when it is aligned. Practical and costly. The purpose of this additional case is to make improvements based on the technical shortcomings of the parent case, to make the gate electrode more cost-effective, and to solve the problem of alignment. In order to achieve the above purpose, the light-emitting element proposed in this addendum is an improvement on the emission structure. The emission structure has an emission source and a gate. The emission source has a carbon microtubule layer. The gate is defined A plurality of light emitting points are generated, and a specific light emitting point is determined by controlling the gate, and the electron is generated by the carbon micro tube of the emission source, and the gate is formed by an insulating layer and a conductive material. Made up of layers. Said light-emitting element, in which the conductive layer of the gate has the ability of addressing the cathode 'to control the light and darkness of the specific light-emitting point. The light-emitting element as described, wherein the conductive layer is a metallic sound. In addition, the manufacturing process of the light-emitting element of this "Ben" = uses the electrons generated by the body of the light-emitting element to interact with a light-emitting substance to generate a light, including the following dream steps · Page 14 2001.07.06.014 471238 V. Description of the invention (12) An emission structure is formed. The emission structure is formed by a carbon microtube layer, an insulating layer, and a conductive layer. The carbon microtube generates the electrons, and the insulating layer and the conductive layer define a plurality of electrons. A light emitting point; forming a space region on the emitting structure; and forming a light emitting structure on the space region, the light emitting structure is coated with the light emitting substance so that the electrons strike the light emitting substance to emit the light. The manufacturing process of the light-emitting element as described above, wherein the emission includes the following steps: ~ Picking up, providing a substrate; screen printing the carbon microtube layer on the substrate; forming the insulating layer on the carbon microtube layer; forming the A conductive layer is formed on the insulating layer; a protective layer is formed on the conductive layer. On the layer, the pattern defines a plurality of areas that make the conductive bare = the protective field; the area where the electric nozzle is routed outside is sandblasted Except for the conductive layer defined by these regions and the carbon microtubule layer defined by such regions are exposed, and the edge layer, the protective layer is removed to form the emission structure. The manufacturing process of the light-emitting element as described above, wherein the plate or a ceramic substrate. The system is a glass-based material, where the conductive layer is a material in which the pattern is printed on a screen-printed silver as described in the manufacturing process of the light-emitting element, nickel glue, or platinum glue. The manufacturing process of the light-emitting element as described 1 ^ · page 15 471238 V. Description of the invention (13) method. As described in the manufacturing process of the light-emitting device, the pattern is formed by an exposure development method. This additional project can gain a deeper understanding through the following icons and detailed descriptions: Figure 1: Structure of the light-emitting element of the parent project. Figure 2: Another structure of the mother case light-emitting element. Figure 3: The control method of the light emitting element in the mother case. Figure 4: Schematic diagram of various gates in the mother case. Figure 5: Schematic diagram of various locations in the mother case. Figure 6: The preferred embodiment of the gate in this addendum. The main symbols in the illustration are as follows: 11 BM (block ma tri X) 12: Fluorescent powder 13 Upper panel 14: In the Lv layer 15 Spacer (Spacer) 16: Gate 17 Glass substrate 18: $ 反 微 管 19 Conductive circuit 21: Wire L 22 in the base plate Enlarged picture of gate 221: First-metal layer 222 • Hair — • Meter — Two-metal layer 223: Insulating layer 2 2 4: Hole 3 1: Second metal layer line 40: Metal mesh 41 : Metal layer 4 2: insulating layer 4 1 1: first metal layer 412: second metal layer 413: third metal layer 421: first insulating layer 422: second insulating layer
第16頁 471238 五、發明說明(14) 51 :發 射 源 52 :閘 極 53 發 光 結 構 61 基 板 62 •碳 微 管 層 63 絕 緣 層 64 :導 體 層 65 保 護 層 66 :喷 砂 67 噴砂 粉 粒 案的精 神 在 於利 用放 置在 碳 微 管 (圖一之221,222, 223)來驅動元件發光與否,這樣的結 需要在碳微管層上另外放置一片獨立製作的閘極。而α本追 加案=發現,製作這樣的結構可以用一較簡單的方法得 到,攻方法除了加工簡單之外,更可以解決多層結構的 位問題,方法如下: 、 1 ·首先在玻璃或陶瓷基板61上網印碳微管層62。 2 ·接著在碳微管層6 2上膠印一層介電層或絕緣芦 6 3 ° s 體層64 4 接著在絶緣層6 3上印製如銀膠、錄膠、翻膠等導 此時己包含了閘極的三層結構。 , 接著必須在閘極上規劃出發光點,可在導體層64 Ϊ ^ ^層彈性的高分子材#,作為保護層65。此保護層 光顧:ΠΡ的方式⑯圖案651 #印上*,也可以選擇曝 W1 Wii 圖案651轉印到塗層上’將發光點的圖樣 係裸露於外。 此時導電層“被圖樣所界定的區域 5 :接著進行噴砂66作業,藉由噴砂粉粒661除去保Page 16 471238 V. Description of the invention (14) 51: Emission source 52: Gate 53 Light-emitting structure 61 Substrate 62 • Carbon microtube layer 63 Insulation layer 64: Conductor layer 65 Protective layer 66: Sandblasting 67 Sandblasting powder The spirit lies in the use of carbon microtubes (Figure 1, No. 221, 222, 223) to drive the element to emit light or not. Such a junction requires an additional piece of gate fabricated separately on the carbon microtube layer. And this additional case = found that making such a structure can be obtained by a simpler method. In addition to simple processing, the method of tapping can also solve the bit problem of the multilayer structure. The method is as follows: 1. First on a glass or ceramic substrate 61 screen printed carbon microtubule layer 62. 2 · Next, a layer of dielectric or insulating reed is printed on the carbon microtube layer 6 2 6 3 ° s body layer 64 4 Then printed on the insulating layer 6 3 such as silver glue, tape, flip, etc. The three-layer structure of the gate. Then, a light emitting point must be planned on the gate electrode, and a flexible polymer material # of the conductive layer 64 can be used as the protective layer 65. This protective layer patronizes: The way of Π⑯ pattern 651 # is printed on *, you can also choose to expose the W1 Wii pattern 651 and transfer it to the coating ’to expose the pattern of the luminous dots to the outside. At this time, the conductive layer "area defined by the pattern 5: The sandblasting 66 operation is then performed, and the protection
第17頁 471238Page 17 471238
及絕緣層6 3 直 五、發明說明(15) 護層65圖樣651所界定下部份的導體層64 到碳微管層6 2露出為止。 胃 — 4忖到令返加荼的間未 :士述的說明可知,在本追加案中, 库 與碳微管之間的間距,因此可以 2 2案的間極 用性皆具,且m所;:卽省製作成本,其進步性及實 加專利之申i j所未有的技術發明,是美依法提出追 本案得由熟悉本技蓺 然皆不脫如附卜真5人士任把匠思而為諸般修飾, 甲印專利耗圍所欲保護者。5. Insulation layer 6 3 Straight 5. Description of the invention (15) The conductor layer 64 in the lower portion defined by the protective layer 65 pattern 651 until the carbon microtube layer 62 is exposed. Stomach — The time between the 4th order and the order: the explanation from the description shows that in this addendum, the distance between the reservoir and the carbon microtubes can be used in both cases, and m ;: Provincial production cost, its progressiveness and technical patents that have not been applied for in patent ij, the United States has proposed to pursue this case in accordance with the law, and it is indispensable for people who are familiar with this technology to be skilled. Thinking for all kinds of modifications, the Jiayin patent consumes those who want to protect.
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TW88113680A TW430857B (en) | 1999-08-10 | 1999-08-10 | Luminescent device |
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TW88113680A01 TW471238B (en) | 1999-08-10 | 2000-02-21 | Light emitting device |
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KR100591242B1 (en) | 2004-05-04 | 2006-06-19 | 한국전자통신연구원 | Field Emission Display |
CN100397547C (en) * | 2004-05-21 | 2008-06-25 | 东元奈米应材股份有限公司 | Field emission display having reflection layer and grid |
CN100395172C (en) * | 2004-12-24 | 2008-06-18 | 清华大学 | Negative light control conductive device based on macroscopical long single-wall or double-wall nano tube bundle |
CN100395173C (en) * | 2004-12-24 | 2008-06-18 | 清华大学 | Light-positive controlling conductive device based on macro long multi-wall carbon nano tube bundle |
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US3891440A (en) * | 1973-11-02 | 1975-06-24 | Gte Sylvania Inc | Process for fabricating a color cathode ray tube screen structure incorporating optical filter means therein |
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WO1996042101A1 (en) * | 1995-06-12 | 1996-12-27 | Ecole Polytechnique Federale De Lausanne | Electron source and applications of the same |
US5872422A (en) * | 1995-12-20 | 1999-02-16 | Advanced Technology Materials, Inc. | Carbon fiber-based field emission devices |
GB2321335A (en) * | 1997-01-16 | 1998-07-22 | Ibm | Display device |
US6064148A (en) * | 1997-05-21 | 2000-05-16 | Si Diamond Technology, Inc. | Field emission device |
EP1361592B1 (en) * | 1997-09-30 | 2006-05-24 | Noritake Co., Ltd. | Method of manufacturing an electron-emitting source |
TW432419B (en) * | 1998-06-18 | 2001-05-01 | Matsushita Electric Ind Co Ltd | Electron emitting element, electron emitting source, image display, and method for producing them |
US6630772B1 (en) * | 1998-09-21 | 2003-10-07 | Agere Systems Inc. | Device comprising carbon nanotube field emitter structure and process for forming device |
US6232706B1 (en) * | 1998-11-12 | 2001-05-15 | The Board Of Trustees Of The Leland Stanford Junior University | Self-oriented bundles of carbon nanotubes and method of making same |
JP4069532B2 (en) * | 1999-01-11 | 2008-04-02 | 松下電器産業株式会社 | Carbon ink, electron-emitting device, method for manufacturing electron-emitting device, and image display device |
US6250984B1 (en) * | 1999-01-25 | 2001-06-26 | Agere Systems Guardian Corp. | Article comprising enhanced nanotube emitter structure and process for fabricating article |
JP2001052652A (en) * | 1999-06-18 | 2001-02-23 | Cheol Jin Lee | White light source and its manufacture |
KR100312694B1 (en) * | 1999-07-16 | 2001-11-03 | 김순택 | Fed having a carbon nanotube film as emitters |
EP1073090A3 (en) * | 1999-07-27 | 2003-04-16 | Iljin Nanotech Co., Ltd. | Field emission display device using carbon nanotubes and manufacturing method thereof |
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