TW469529B - Method and apparatus for removing organic substance on substrate, method for producing semiconductor device, and method and apparatus for producing display device - Google Patents

Method and apparatus for removing organic substance on substrate, method for producing semiconductor device, and method and apparatus for producing display device Download PDF

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Publication number
TW469529B
TW469529B TW89121324A TW89121324A TW469529B TW 469529 B TW469529 B TW 469529B TW 89121324 A TW89121324 A TW 89121324A TW 89121324 A TW89121324 A TW 89121324A TW 469529 B TW469529 B TW 469529B
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Taiwan
Prior art keywords
substrate
manufacturing
display device
liquid crystal
photoresist
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Application number
TW89121324A
Other languages
Chinese (zh)
Inventor
Kazufumi Ogawa
Tadashi Otake
Takaiki Nomura
Tsuyoshi Uemura
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Matsushita Electric Ind Co Ltd
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Priority claimed from JP28958099A external-priority patent/JP2001110711A/en
Priority claimed from JP2000063954A external-priority patent/JP2001255502A/en
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Application granted granted Critical
Publication of TW469529B publication Critical patent/TW469529B/en

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F7/00Signs, name or number plates, letters, numerals, or symbols; Panels or boards
    • G09F7/16Letters, numerals, or other symbols adapted for permanent fixing to a support
    • G09F7/165Letters, numerals, or other symbols adapted for permanent fixing to a support obtained by a treatment of the support
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A method of producing a display device in accordance with the present invention includes a step of producing a substrate by forming a predetermined element pattern on the substrate, and a step of producing a cell by securely attaching another substrate to the substrate to from a pair of substrates. At least one of the step of producing a substrate or the step of producing a cell includes a step of removing an organic substance existing on the substrate with the use of a supercritical fluid or a subcritical fluid. This makes it possible to completely oxidize and remove the organic substance at relatively low temperature without degrading device characteristics and to eliminate device contamination factors.

Description

469529 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(1 ) 技術領域 ’ 本發明係有關於一種以超臨界流體或亞臨界流體去除 有機处士方义及其製造裝置。又,本發明並係有關於一種 採用以超臨界流體或亞臨界流體去除有後物之方法的半導 體裝置之製造方法及顯示裝置之製造方法。 技術背景 一面要確保半導體裝置或平板顯示器(以下簡稱叮顯 示器)等顯示裝置所具有之各種性能^的安定性,一面又要提 升其马質等時,在製造時同時保持使用基板之表亟等於良 好-之狀態是_件非常重要的事。 舉例言之’在半導體裝置或液晶顯示裝J(製造過程 中’元件围像之形成須賴微影成像步驟之進行,而該微影 成像步驟即不例外》本所周知’微影成像步驟中通當須進 行Ua·去除步驟。具體而言,乃藉發煙硝酸氧化,或華酚 系有後漆劑分解之,以去除光阻。但是,這樣用U竺剝離 液分解去除先^阻之方法,其去除步驟本身郎不安定,且, 製造之元件將因有部份光阻殘留未除,或殘存有含於光阻 剝舞濟内之不_純物,致使元件特性變得不安定,而降低良 率。 又,為了將基板之表面等雒持於直好的选態下,過去 是於製造過程中進行多次之洗淨4理,以努力維持產品之 可傻賴性。而該等洗漫處理中則廣範地均係使用純水作為 先_查劑。純水係一不鈍物成分植液體,也沒九危險性 且使_用性優良。 本紙張尺度適用中國國家標準(CNS>A4規格(210 X 297公釐) -----I ,1---S----f 裝 ---- (請先W讀背面之注意Ϋ項再填寫本S > 訂----- -4- Λ/ Λ/ 經 濟 部_ 智 慧 財- 產 局 員 工 消 費 合 作 社 印 製 Β7 五、發明說明(2 ) 但,要於使用純水等之;t淨處理申,於製造砰顯示器 時同時保持被I淨物(即基板)之表面於良好之狀態’實有 其困難。 舉例言之,於FP顯示器之一實施態樣,即液晶顯示器 (LCD)之製造過程中,於配向膜形成前、配向联之研磨處 理後及朝、空胞元丨主入液晶後等,都要反覆的進行1浪立 S。但是,於製造LQD之一連串過程中,即使欲埠行I淨 處理,亦因種種理由,有時仍難免實行困難。例如,將成 對的基板相貼合以組成一空胞元後,理當是要進行洗淨處 理。將基板相貼合後須進行洗淨處理的理由是,要進行貼 合時’須對預先塗佈於任一方基板上之密封劑進行熱處理 等以使其硬化所致。即,一旦進行熱處理,密封劑揮發出 之成分將會附著於基柄面上等而污染了空胞元,使顯示器 之顯示特性劣化。又,如進行空胞元之洗淨,即使洗淨後 進行過充份的乾燥步驟,也無法完全的去除空胞元内部之 洗淨劑,致使洗淨劑殘留。結果乃使顯示晝面呈規^白濁等, 致發生顯示特性劣化之現象。所以,於組成空胞元後,不 論基板表面是否被污染,仍有無法去除污染物質之問題。 又’為FP顯示器之另一實施態,即^^發光顯示器 (ELD)時,則於形成載子輸送層及/或發光層前以純水等進 行洗淨處理。但是’即使於洗淨後進行乾燥步驟,基本表 面仍將殊留有吸附水’成為顯示畫面上黑點夕發生原因^ 因此,於ELD時,也有製造時同時要保持基板之表面於良 好狀態之困難。 本紙張尺度適用中國國家標準<CNS)A4規格(210 X 297公釐) — II —II - — II I I I l· I 1 I ^ - — ml — — — <請先閱讀背面之注意事項再填寫本S ) 46 9 b 2 9 經濟部智慧財產局員工消費合作杜印製 A7 B7 五、發明說明(3 ) 又’該所謂之載子輪送層係指電:週輸送層或電子輸送 層。其次’因載子輪送層所像用之薄膜形成材料载子 輪送層成為電子输送層時,發光層將為陽極側之電洞輸送 層;即’各層_樣益將為:基板/陽極/發光層/雷子輸送層/ 陰择15芨外,若使載子輪送層成為電洞輸送j時,則發光 層將為陰極側之電子輸送層;各層構造則將為:基板/陽極 /電洞輸送層/發光層/陰極。又,近來則有一種具三層樓造 之ELD的提案,這種三層構造之eld是猃氣子输送畢間形 成一種獨立而不具載子輸送層機能之登光層(此時,各層 構造變成:基板/陽極/電洞輸送層/發光層/電子輸送層/陰 極。 又,前述各層一般係以真空蒸鍍法形成。以真空蒸鍍 法製膜時之真空蒸鍵過程,污染程度低,但真空蒸鍵法以 外之步驟則易受污染。然而,就吾人所知_,各層之外側面 由於須形成供雷子注入或電洞注入之界面,清淨性是非常 重要的。 綜合以上所言’於车導想裝置或顯示裝置中,元件圈 像之形成須賴微影成像步驟之進行,但因去除光阻時,會 殘存有光阻殘渣或含於光阻剝離液内之不純水,,而產生元 件特性信賴性.修低之問題》 又,於洗淨處理中所使用之純^水,則需要藉加熱以進 行乾燥步驟,只要殘留些微之純水’即將損害顯示器之性 户能。a此,吾人"乃期望能開發出一種使用洗淨力高且不殘 留之洗淨物質的洗淨技術。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) — I — I I I I I L* I 1. — 1 i I I I 如*J1!111111 一 (锖先閱讀背面之注意事項再填寫本頁) A7 B7 經 濟 部- 智 慧 財- A 局 員 工 消 費 合 作 社 印 製 五、發明說明(4 發明之揭示 有錄於以上問題’本發明之第1目的乃在提供一反有機 物之去除方法,藉該方法可確I作業安全性且廢液之j瑗 也甚為簡便。進而,並利用該方法提供一秭半導邾笋置及 顯不裝置之製造方法’藉該方法可一面排除製造元件上構 成污染之要因,一面以相對低溫將存在於基板上之有機物 完全氧化去除,而在不損及元件特性下贺作該皁導艚奘罾 及顯示裝置。 又’本發明之第2目的則在提供一種顯示裝晉之製造方 法及其製埤裝置’藉該方法及裝置不但可進行洗洚處理而 不損害被洗淨物表面之狀態,且可不殘留洗淨物質,而製 成較習知者具高性能之翮示$置。 (1)基板上之有機物的长除,方法 為了解決前述問題,本發明係有關於一種基板上之有 舞物的去除方法,其特徵在於其係以超臨界水氣亞臨界水 氧化去除存在於無機基板上之有機物。於此,所謂「存在 於無機基板上」並不單是.指有機物存在於無機基板表面的 情形’亦包含於基板上形成有單層_或複^§薄膜,而於這 些薄膜存在有有機物的情形而言。 於前述方法中,該有機物可為經圖像化而呈現預定形 狀之感光性樹脂所形成之有機被膜。 又,於前述方法中,該超臨界水或亞臨界水宜使用電 阻係數10百萬歐姆以上,且於375°c以上、220大氣壓力以 上之超臨界狀態之超純水》 本紙張尺度適用中國國家標準(CNS)A4规格(210 X 297公釐) ----I--------裝-----S-II1 訂----II!線 (諳先《讀背面之注f項再填寫本頁) 469529 Α7 Β7469529 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (1) Technical Field The present invention relates to a method for removing organic sterilizer and its manufacturing device by using supercritical fluid or subcritical fluid. Further, the present invention relates to a method for manufacturing a semiconductor device and a method for manufacturing a display device by using a method of removing after-effects with a supercritical fluid or a subcritical fluid. Technical background While it is necessary to ensure the stability of various performances of display devices such as semiconductor devices or flat panel displays (hereinafter referred to as Ding Display), and to improve their horse quality, etc., it is urgent to maintain the surface of the substrate while manufacturing. A good state is a very important thing. For example, 'in the semiconductor device or liquid crystal display device J (in the manufacturing process', the formation of the surrounding image of the element depends on the lithography imaging step, and this lithography imaging step is no exception.) Tongda must be subjected to a Ua · removal step. Specifically, it is oxidized by fuming nitric acid, or after the phenol is decomposed to remove the photoresist. However, Uzhu stripping solution is used to decompose and remove the first resist. Method, the removal step itself is unstable, and the manufactured component will remain unremoved due to some photoresist residues, or impure substances contained in the photoresist stripper, which will cause the component characteristics to become unstable. In addition, in order to hold the surface of the substrate in a straightforward selection state, in the past, it was cleaned many times during the manufacturing process in an effort to maintain the dullness of the product. In these washing and diffusion treatments, pure water is used as a pre-check agent. Pure water is a non-blunt substance containing plant liquid, which is not dangerous and excellent in usability. This paper scale is applicable to China Standard (CNS > A4 specification (210 X 297 mm) ---- -I, 1 --- S ---- f equipment ---- (Please read the note on the back before filling in this S > Order ----- -4- Λ / Λ / Ministry of Economic Affairs_ Wisdom Wealth-Printed by the Consumer Bureau of Industry Bureau B7 V. Description of Invention (2) However, it is necessary to use pure water and so on; t clean the application, while maintaining the surface of the net (ie, the substrate) when manufacturing the ping display In a good state, 'it has its difficulties. For example, in one embodiment of the FP display, that is, in the manufacturing process of the liquid crystal display (LCD), before the alignment film is formed, after the alignment processing is ground, and when After the cell enters the liquid crystal, etc., it is necessary to repeatedly carry out a wave of S. However, in a series of processes of manufacturing LQD, even if the port is cleaned, it is sometimes unavoidable for various reasons. For example, implementation difficulties. After laminating a pair of substrates to form an empty cell, it is reasonable to perform a cleaning process. The reason for the cleaning treatment after bonding the substrates is that when bonding is to be performed, 'pre-coating is required. Heat treatment of the sealant on any of the substrates to harden it. That is, once the heat treatment is performed, The volatilized components of the sealant will adhere to the surface of the base handle, etc., and contaminate the empty cells, thereby deteriorating the display characteristics of the display. Also, if the empty cells are washed, they will be dried sufficiently after washing. In this step, the cleaning agent inside the empty cell cannot be completely removed, leaving the detergent behind. As a result, the display daytime surface becomes white and cloudy, and the display characteristics are degraded. Therefore, after forming the empty cell, No matter whether the substrate surface is contaminated or not, there is still a problem that pollutants cannot be removed. It is also another embodiment of the FP display, that is, when a light emitting display (ELD) is used, a carrier transport layer and / or a light emitting layer are formed. Washed with pure water before. However, 'Even if the drying step is performed after washing, there will still be adsorbed water on the basic surface' as a cause of black spots on the display screen. Therefore, in ELD, there are also manufacturing At the same time it is difficult to keep the surface of the substrate in good condition. This paper size applies to Chinese National Standards < CNS) A4 (210 X 297 mm) — II —II-— II III l · I 1 I ^-— ml — — — < Please read the notes on the back before Fill in this S) 46 9 b 2 9 Consumption cooperation by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed A7 B7 V. Description of the invention (3) Also, the so-called carrier rotation layer refers to the electrical: weekly or electronic transport layer . Secondly, 'Because of the film-forming material used in the carrier rotation layer, when the carrier rotation layer becomes the electron transport layer, the light-emitting layer will be the hole transport layer on the anode side; that is,' each layer_sample benefit will be: substrate / anode / Light-emitting layer / Thunder-conveyor layer / Negative selection 15 芨, if the carrier wheel transport layer is used for hole transport j, the light-emitting layer will be the electron transport layer on the cathode side; the structure of each layer will be: substrate / anode / Hole transport layer / light emitting layer / cathode. In addition, recently, there is a proposal of a three-story ELD. The eld of this three-story structure is to form an independent light-emitting layer without the function of a carrier transport layer after the tritium transport. It becomes: substrate / anode / hole transport layer / light-emitting layer / electron transport layer / cathode. In addition, the foregoing layers are generally formed by a vacuum evaporation method. The process of vacuum evaporation during film formation by the vacuum evaporation method has a low degree of pollution. However, steps other than the vacuum evaporation method are susceptible to contamination. However, as far as I know _, the cleanliness of the outer side of each layer is very important because of the interface for the injection of thunder or holes. 'In the car guide device or display device, the formation of the component circle image depends on the lithography imaging step, but when the photoresist is removed, photoresist residues or impure water contained in the photoresist stripping solution will remain. However, the problem of reliability of component characteristics. The problem of repair is reduced. Also, the pure water used in the cleaning process needs to be heated to perform the drying step. As long as a little pure water remains, it will damage the display user. Yes. A Therefore, I " expect to develop a cleaning technology that uses high cleaning power and no residual cleaning materials. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) — I — IIIIIL * I 1. — 1 i III such as * J1! 111111 I (锖 Please read the precautions on the back before filling this page) A7 B7 Ministry of Economic Affairs-Wisdom Wealth-Printed by Bureau A Consumer Consumption Cooperative V. Invention Description (4 Inventions The disclosure is recorded in the above problem. The first object of the present invention is to provide a method for removing organic matter. By this method, the safety of operation can be confirmed and the waste liquid can be easily removed. Furthermore, this method is used. Provide a manufacturing method of semiconducting bamboo shoots and display devices. 'This method can eliminate the causes of pollution on the manufacturing elements, and completely oxidize and remove the organic substances present on the substrate at a relatively low temperature without harming it. Contributing to this soap guide and display device under the characteristics of the element. Also, 'the second object of the present invention is to provide a manufacturing method of a display device and a device for manufacturing the same.' The cleaning process is performed without damaging the state of the surface of the object to be cleaned, and the cleaning substance can be left without being washed, and it can be made into a display device with higher performance than the conventional one. (1) Long removal of organic matter on the substrate, method In order to solve the foregoing problem, the present invention relates to a method for removing dancing objects on a substrate, which is characterized in that it removes organic substances existing on an inorganic substrate by supercritical water gas subcritical water oxidation. Here, the so-called "existence "On an inorganic substrate" does not just mean that the case where organic substances are present on the surface of the inorganic substrate 'also includes the formation of single-layer or multi-layer thin films on the substrate, and in the case where organic substances are present on these films. The organic substance may be an organic film formed of a photosensitive resin that is imaged to have a predetermined shape. Also, in the aforementioned method, the supercritical water or subcritical water should be ultra pure water with a resistivity of 10 million ohms or more and a supercritical state above 375 ° C and above 220 atmospheric pressure. National Standard (CNS) A4 specification (210 X 297 mm) ---- I -------- installation ----- S-II1 order ---- II! Line (Note f, please fill out this page) 469529 Α7 Β7

經濟部智慧財產局貝工消費合作社印W 五、發明說明(5 ) 又,於前述方法中,該無機基板寸為由矽或玻璃所構 成者。 於前述方法中,乃使用於超臨界狀態或亞臨界狀態之 水去除存在於無機基板上之有機物。 '依前述方法,由於係使用於超臨界狀態或亞臨界狀態 之水去除在_在於無機基板上之有機物。因此,與過去僅用 安全性#且危險之有機溶劑進行去除作業者相比較,可確 保於去除有機物睥作業之安全性。又,有機去除後之廢 液也因不含對人體有害之物質而可進行簡便的廢液處理。 又,習知、之有機溶劑中因含有不純物,即使將有機物去除, 有時也可能基板上附著該冬純物,而造成無機基板 表面被污染的問題。但,如依前述方法’使用電阻係數1〇 百萬歐姆以上之超)純水,由於係以幾乎不含不純物之超臨 界水或亞臨界水進行有機物之去除,因此,亦無於去除後 之基板上殘存迮砘物而污染無機基板之問題。 (2)半導體裝置支製造方法 又’為了解決前述問題,本發明之半導體裝置之製造 方法乃為藉.微影成像财.之埠行而形成元使圖像’而該微影 成像術則包含有以下步驟者,即:一圖像化標的臈形成步 驟,係用以於半導濮基板上形成圖像化欉的膜者;一塗佈 步驟,係用以於該圖像化標的胰上塗佈先阻者;—光事曝 光步驟,係經具有預定光罩围像之龙罩,使該先阻曝光, 以於該光阻上形成光罩圖像之漤像者;一鯓像步驟,係用 以將經曝光後之該光阻顯像,以形成光卩且囷像者;一蝕 本紙張尺度適用中國國家標準(CNS)A4規格<210 X 297公爱> — — — — — ,114 ^ i ------------- <請先閲讀背面之>i意ί項再填寫本頁) -8- 經濟部智慧財產局員工消費合作杜印製 A7 ,- B7_ 五、發明說明(6 ) 步驟,係用以飯刻前述圈像化標的膜舍;及一光a去除步 驟’係以超臨界水或亞臨界水氧化去除該光阻圖像者。 於前述方法中,並可進行真接曝光步雜以取一彳戈該光罩 曝光步驟,而該直接曝光步驟則是以電子束於該光阻上直 接楛繪任意之圈像者。 又於刖述方法中,該超:臨界_水咸.亞臨界水則宜使用 電阻係數10百萬歐姆以上,且於375t以上、220大氣壓力 以上之超臨界狀態之超純水。 依前述方法,由於超臨界水或亞臨界水(以下簡稱超臨 界水等)乃籍―超鹿界水氧化反應或亞臨界水氧化反應,而將 半、導髏基板上之有機物完全氧化分解並去除者,因此,並 無、有機物部份殘存之積形發生。結果,可防止因有機物之 殘渣而引起元件轉性之不安定化。又,過去使用之有機溶 劑則女全性彳&且危險,但如改使用超臨界水等就可確保安 全性。又,使用後之廢液也因不含對人體有害之物質而 可進行簡便的廢液處理。又,因習知之有機溶劑,其中亦 理當含有不純物,因此,即使在光阻去除後,有瞍也可能 在半導膝基板上附著不純物,而造成半導體基板表面被污 染的問題*但,如依前述方法,使用電阻係數10百萬歐姆 以上之超純水,因係以幾乎不含不純物之超臨界水或亞臨 界水進行有機物之去除’所以,無不純物殘存於去除後之 基板上而造成污染之問題。 (3)氟示裝置之製造方法 又’為了解%前述問題,本發晛之顯示裝置之製造方 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ί — ·裝-----'I —訂-------線 <請先閱讀背面之注意Ϋ項再填寫本I) -9- A7 B7 五、發明說明(7 ) (請先閱讀背面之注意事項再填寫本頁) 法乃包含有以下步驟,即:一基^赛製祎步驟,係用以於基 板上形成預定之孓嘴圖像者;及一奥元製作步驟,係用以 將該基板和與它成對之另一基板相貼合以製成一胞元者; 且’該基板製作步驟及該胞元製作步驟至少有一方包含有 一去除步驟,該老除步称係用超—臨界流體或亞臨界流禮去 除存在於基板上之有機^物者。 於前述方竽中’該板製作步驟中用以去除有機物之 步驟,可為以超臨界水或亞臨界水進行有機物尤氧化去除 者。 又’於前述方法中’該胞元製作步驟中用以羞除有機 物之步驟’亦可為一以超臨界流雔或亞臨界流體進行有機 物之溶解去除之浹淨步驟。 經濟部智慧財產局員工消費合作社印製 依前述方法’將超臨界流體或亞臨界流體(以下也有簡 稱超臨界流趙等)取出至諸如空氣中等,因虛於澴窄片壓力 比臨界溫度及臨界壓力更低的環境下,而產生由該基板表 面立即氣祀等之相變化’因此,不會夜留―於基板上。所以, 在過轰以有機溶劑進行去除有機物時,所需要燥步驟 等,乃鼕成不需要’而減少了製1步驟5數β且,扣结果可 磉低製造顯示裝置時之製造成本又可槎升甚生產性。又, 使用超臨界皮或亞臨界水時,因可完全的氧化分解並去除 省機物,而無不能去除之有機物殘留於基板上之問題。所 Θ,乃可製造出顯示特性等優良$艚示装置。 又’前述所謂「顯示裝置」係意指包含諸如液晶顯示 器等之受光型顯示器及諸如電激發光顯示器(ELD)等之自 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公度) • 10- 經 ★ 部- 智 慧 財- 產 局 負 工 消 費 合 作 社 印 製 A7 B7 五、發明說明(8 ) 發光型顯示器者。 又,為了解決前述問題,進而,本發明之顯示裝置之 製造方法乃用以製造具有於陣列基板與相對基板間形成液 晶層而構成液晶胞之顯示裝置者,而該製造方法則包含有 以下步驟,即:一基板製作步驟,係用以製作該陣列基板 及相對基板者;及一液晶胞製作步驟,係用該陣列基板及 相對基板製作該液晶胞者;且,‘述基板製作步驟中並具 有一微影成像術,以形成經圊像化而呈現有預定形狀之薄 膜者’而該微影成像術則包含有以下步驟:一圖像化標的 膜形成步驟,係用以於基板上形成圖像化標的膜者:一塗 佈步驟’係用以於該圖像化標的膜上塗佈光阻液者;一光 罩曝光步驟,係經具有預定光.罩圖像之光罩,使該光阻曝 光’以於該光阻上形成光罩圖像之潛像者;一顯像步驟, 係用以將經曝光後之該光阻顯影一,以形成光阻圖像者;— 蝕刻步驟’係用以蝕刻前述圖像化標的膜者;及一光阻去 除步驟,係以超臨界水或亞臨界水氧化去除該光阻圖像者。 又,為了解決前述問題,進而’本發明之顯示裝置之 製造方法乃用以製造具有於附有電極之基板與電極間形成Printed by the Shelley Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (5) In the foregoing method, the inorganic substrate is made of silicon or glass. In the aforementioned method, water in a supercritical state or a subcritical state is used to remove organic substances existing on an inorganic substrate. 'According to the aforementioned method, since the water used in the supercritical state or the subcritical state removes organic matter on the inorganic substrate. Therefore, it is possible to ensure the safety of the organic matter removal operation compared with those who used only the safe # and dangerous organic solvents in the past. In addition, the waste liquid after organic removal can also be easily processed because it does not contain substances harmful to the human body. In addition, it is known that the organic solvent contains impurities, and even if the organic matter is removed, the winter pure substance may adhere to the substrate, and the surface of the inorganic substrate may be contaminated. However, according to the aforementioned method, 'Using ultra) pure water with a resistivity of 10 million ohms or more, since the removal of organic matter is carried out with supercritical water or subcritical water containing almost no impurities, it is also not removed after removal. The problem of contamination of the inorganic substrate due to the presence of residues on the substrate. (2) The manufacturing method of the semiconductor device is to 'in order to solve the aforementioned problems, the manufacturing method of the semiconductor device of the present invention is to form an image by borrowing the lithography imaging property.' The lithography imaging method includes Those who have the following steps are: a step of forming an imaged target, which is used to form a film of an imaged target on a semiconductor substrate; and a coating step, which is used to form a pancreas of the icon. Coating the first resister;-the light exposure step is a dragon mask with a predetermined mask surrounding the image, the first resister is exposed to form a mask image on the photoresist; an imager step , Is used to develop the photoresist after exposure to form a photocathode and an imager; a paper size of this paper applies the Chinese National Standard (CNS) A4 specification < 210 X 297 public love > — — — — —, 114 ^ i ------------- < Please read the item on the back > i and then fill in this page) -8- Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs A7,-B7_ V. Description of the invention (6) The step is to engraving the film house of the aforementioned circle image; and a light a removal step is based on the super-pro Water or subcritical water oxidation by removing the resist image. In the foregoing method, a true exposure step can be performed to obtain the mask exposure step, and the direct exposure step is to directly draw an arbitrary circle image on the photoresist with an electron beam. In the described method, the super: critical_water salty. Subcritical water is suitable for ultra-pure water with a resistivity of 10 million ohms or more and a supercritical state of 375t or more and 220 atmospheric pressure or more. According to the aforementioned method, since the supercritical water or subcritical water (hereinafter referred to as supercritical water, etc.) is the super-deer water oxidation reaction or the sub-critical water oxidation reaction, the organic substances on the semi- and deuterium substrates are completely oxidized and decomposed, and The remover, therefore, no accumulation of organic matter remains. As a result, it is possible to prevent the instability of the device from being caused by the residue of organic matter. In addition, organic solvents used in the past are female-friendly and dangerous. However, if supercritical water is used instead, safety can be ensured. In addition, the waste liquid after use can be easily processed because it does not contain substances harmful to the human body. In addition, because of the known organic solvents, which also contain impurities, it is possible that even after the photoresist is removed, there may be impurities on the semiconductor substrate, causing the semiconductor substrate surface to be contaminated. * However, as described above Method, using ultrapure water with a resistivity of 10 million ohms or more, because organic matter is removed with supercritical water or subcritical water containing almost no impurities, so no impurities remain on the removed substrate and cause pollution. problem. (3) The manufacturing method of the fluorine display device is also to understand the aforementioned problems. The manufacturer of the display device of the present invention applies the Chinese paper standard (CNS) A4 specification (210 X 297 mm). ---- 'I —Order ------- line < Please read the note on the back before filling in this I) -9- A7 B7 V. Description of the invention (7) (Please read the note on the back first Please fill in this page again) The method includes the following steps, namely: a basic ^ competition system step, which is used to form a predetermined image of the mouth on the substrate; and an Austrian yuan production step, which is used to The substrate is bonded to another substrate paired with it to make a cell; and at least one of the substrate manufacturing step and the cell manufacturing step includes a removal step, and the old division step is called super- Critical fluids or subcritical fluids remove organic matter present on the substrate. In the aforementioned method, the step of removing organic matter in the step of making the board may be one in which supercritical water or subcritical water is used to remove organic matter, especially by oxidative removal. Also in the aforementioned method, the step of removing organic matter in the cell production step may be a cleaning step of dissolving and removing organic matter with a supercritical flow or a subcritical fluid. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints out the supercritical fluid or subcritical fluid (hereinafter also referred to as supercritical flow, etc.) to air such as the air according to the aforementioned method. In a lower-pressure environment, a phase change such as an immediate sacrifice of air from the surface of the substrate occurs, so it does not stay on the substrate at night. Therefore, in the case of removing organic matter by using an organic solvent, the drying steps and the like are required, which is not necessary for winter production, and the number of steps 1 and 5 is reduced. Moreover, the deduction result can reduce the manufacturing cost when manufacturing the display device, and It is very productive. In addition, when supercritical skin or subcritical water is used, it is possible to completely oxidize and decompose and remove organic matter, so that there is a problem that organic matter that cannot be removed remains on the substrate. Therefore, Θ is capable of producing excellent display devices such as display characteristics. Also, the aforementioned "display device" means a light receiving type display such as a liquid crystal display, and an electroluminescent display (ELD), etc. Since this paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 meters) ) • 10- Ministry of Economic Affairs-Wisdom Wealth-Printing of A7 B7 by Industry Bureau Consumer Cooperatives V. Description of Invention (8) Light-emitting display. In addition, in order to solve the foregoing problems, further, the method for manufacturing a display device of the present invention is used to manufacture a display device having a liquid crystal layer formed between an array substrate and an opposite substrate, and the manufacturing method includes the following steps. That is, a substrate manufacturing step is used to fabricate the array substrate and the opposite substrate; and a liquid crystal cell manufacturing step is used to fabricate the liquid crystal cell using the array substrate and the opposite substrate; and, It has a lithography to form a film with a predetermined shape after being imaged ', and the lithography includes the following steps: a film formation step of an image target is used to form on a substrate Photographic target film: a coating step is used to apply a photoresist solution to the film of the graphic target; a photomask exposure step is performed through a photomask with a predetermined photomask. The photoresist is exposed so as to form a latent image of the mask image on the photoresist; a development step is used to develop the photoresist after exposure to form a photoresist image;-etching step Etching the imaging system used by the underlying film; and a resist removal step, based supercritical water or subcritical water oxidation by removing the resist image. In addition, in order to solve the foregoing problems, a method of manufacturing the display device of the present invention is to manufacture a substrate having electrodes formed between the substrate and the electrodes.

* A 有載子輸送層及發光層之電激發光胞之題示裝置者,而該 製造方法則包含有以下步驟,即:—附有電極各基板之製 作步驟,係用以製作附有電極之基板者;及一電鹌發光胞 裝作步驟’係用該附有電極之k板製作該電激發光胞者; 且’該附有電極之基板之製作步驟中並具有一微影成像 術,以形成經圖像化而呈現預定形狀之薄膜者,而該辫影 本紙張尺度適用中國國豕標準(CNS〉A4規格<210 X 297公爱〉 —------------___ (請先M讀背面之注意事項再填寫本頁) 幻· •線- -11- 46 95 2 9* A device with an electrically excited photocell for the carrier transport layer and the light-emitting layer, and the manufacturing method includes the following steps, namely:-the manufacturing steps of the substrates with the electrodes are used to make the electrodes A substrate; and an electric quaternary light-emitting cell preparatory step 'is used to make the electro-excited photocell using the electrode-equipped k-plate; and' the electrode-produced substrate has a lithography imaging method In order to form a film with a predetermined shape after being imaged, the paper size of the braided paper is in accordance with the Chinese national standard (CNS> A4 specification < 210 X 297 public love>) ------------ --___ (Please read the precautions on the back before filling this page) Fantasy · • Line--11- 46 95 2 9

五、發明說明(9) 經濟部智慧財產局員工消費合作社印製 成像術則包含有以下步驟:_囷像化榡的膜形成步驟係 用以於基板上形成圖像化標的膜者;一塗斤步驟’係用以 於該困像化標的臈上塗佈光阻液者;一光罩曝光步驟係 經具有預定光罩圓像之光罩,使該光阻曝光,以於該光阻 上形成光罩圖像之潛像者;一顯像步驟’係用以將經曝光 後之該光阻顯像,以形成光阻圖像者;_蝕刻步驟,係用 以蝕刻前述圖像化標的膜者;及一光阻去除步驟,係以超 臨界水或亞臨界水氧化去除該光阻圖像者。 又’為了解決前述問題,進而,本潑明之顯示裝置之 製造方法乃用以製造具有於,列基板與相對基板間設置有 液晶層而構成液晶胞之顯示裝置者,而該製造方法則包含 有以下步驟,即:一基板製作步驟,係用以製作該陣列基 板及相對基板者;及一液晶胞製,步驟,係用該陣列基板 及相對基板製作該液晶胞者:且,該液晶胞製作步拜中並 包含有一以超臨界流體或亞臨界流體洗淨前述陣列基板及 / /或相對基板之洗淨步驟。 於前述方法中’該液晶胞製作步驟中,由於具有一以 V Γ 超臨界流體或亞臨界流體洗淨基板之洗淨步驟因此,在 該液晶胞製作步驟中所須進行之乾燥步驟等乃變成不需 要,而減少了製造步驟數。且 '此結果可減低製造顯示裝 置時之製造成本又可提4f·其生產性。又,因乃用超臨界流 體等進行洗淨’所以’亦無洗淨物質殘留,而可防止發生 顯示畫面上之顯示黑色之部份變淺等白濁化之現象。 又’所謂陣列基板係意指於基板上具有電極及配線, 本紙張尺度適用中國國家標準(CNS)A4規格<210 X 297公爱> -------- l·---j·'^i — ll·---訂.Ίί^-----線一 (請先«讀背面之注意事項再填寫本頁) -12- 經濟t智慧財產局員工消費合作社印製 A7 _B7________ 五、發明說明(10) 或依需要並具有薄膜電晶體等者。又‘’所謂相對基板係意 指於基板上具有電極等或必要之濾色器者。因此,前述所 謂液晶胞製作步驟係意指,於基板上形成電極及配線等以 進行基板製作步驟之後一直至完成液晶胞為止之一連串步 驟。另外進一步附加之一步雜’即’於液晶胞内設置驅動 電路等之模組步驟,則不含於液晶胞製作步驟中。 於前述方法中,該液晶胞製作步驟中可匕含一配向膜 形成步驟’以於前述陣列基板及/或相對基板上形成配向膜 者;又,前述洗淨步驟並可於該配向膜形成步驟之前或後 進行。 依前述方法,於配向膜形成步称前以超臨界流體等進 行洗淨步驟’不但可去除基板上之塵埃,且不會發生如過 去般於洗淨處理中殘留洗淨劑之問題。因此,將可製造出 良好的配向膜。 又,即使於形成配向膜後方才進行該洗淨步驟,由於 超臨界流體等並無致使配向膜變質等之不良影響,因此可 在不考慮配向膜對洗淨劑之安定性下,進行洗淨處理,而 得到一膜表面清淨度良好之配向膜。即,如以過去之液體 系洗淨處理法進行配向膜之洗淨時,依洗淨劑種麪之別, 將有配向膜因化學作用而變〜質,造成不良影響之問題,而 槔用前述洗淨步驟時,則不但不會使配向膜變質,也不會 降低配向能。又,因無洗淨物質殘留,故可抑制發生傾轉(斜 向錯位;disclination)或配向流動之現象,所以不但可製造 出具良好顯示特性之液晶顯示器,又可減少製造步驟數, 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ------------裝----i-—丨 —訂-------I-線 (請先閲讀背面之注意事項再填寫本頁) -13- 469529 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(11) 使製造成本減低,並提升其生產性。_ 於前述方法中,該液晶胞製作步驟可具有以下步驟, 即:一配向膜形成步驟,係用以於前述陣列基板及/或相對 基板上形成配向膜者;及一配向處理步驟,係對該配向膜 施予配向處理者;又,前述洗淨步驟則可於該配向膜形成 步驟或配向處理步驟中至少一方之步驟之前及/或後進行。 依前述方法,除可有申請專利範圍第3項發明所具作用 及效果外,即使在配向處理步驟後方才進行洗淨步鄉,亦 可抑制配向膜之配向能降低,同時並可省略乾燥步驟。 於前述方法中,該液晶胞製作步称可具有以下步驟, 即:一貼合步驟,係用以將前述陣列基板與相對基板相貼 合’以组成一空胞元者;及一液晶注入步驟,係將液晶注 入至該空胞元之内部者;又,前述洗淨步驟則可於貼合步 驟或液晶注入步驟中至少一方之前及/或後進行, 又’由於處於超臨界流體狀態之物質不但粘性低,且 具高度擴散性,因此即使是對液體系洗淨劑不能進入之部 份’亦可輕易滲透。因此,如依前述方法於貼合步驟後進 行洗淨步驟,亦可使超臨界流體或亞臨界流體進入至空胞 元内部’因此可洗淨以過去之洗淨方法難以洗淨炙空胞元 内部。又,超臨界流體等由於在大氣壓力下會立即變成氣 相狀態,因此亦不會殘留於空胞元内部。所以,依前述方 法’可製造出具更優良顯示品質等之性能之顯示裝置。 又,過去之液體系洗淨法,由於洗淨劑會使密封劑劣 化’故無法充份洗淨液晶注入時附著之液晶污染等。然 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ------ ----1—ιλ'^_ι!_ (靖先閲讀背面之注意事項再填寫本頁) 訂..---7----線ί -14· A7 A7V. Description of the invention (9) Imaging technique printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs includes the following steps: The film formation step of the image is used to form the film of the image target on the substrate; The step of jin is used to apply a photoresist liquid on the diaphragm of the sleepy target; a photomask exposure step is to expose the photoresist through a photomask with a predetermined round image of a photomask to form a photoresist on the photoresist. A latent image of a mask image; a development step is used to develop the photoresist after exposure to form a photoresist image; an etching step is used to etch the film of the aforementioned image target And a photoresist removal step, wherein the photoresist image is removed by oxidation with supercritical water or subcritical water. In order to solve the aforementioned problems, furthermore, the method for manufacturing the display device of this Primer is for manufacturing a display device having a liquid crystal layer provided between a column substrate and an opposite substrate to constitute a liquid crystal cell, and the manufacturing method includes The following steps are: a substrate fabrication step for fabricating the array substrate and the opposite substrate; and a liquid crystal cell fabrication step for fabricating the liquid crystal cell using the array substrate and the opposite substrate: and the liquid crystal cell fabrication The step of cleaning includes a step of cleaning the array substrate and / or the opposite substrate with a supercritical fluid or a subcritical fluid. In the aforementioned method, the liquid crystal cell manufacturing step has a cleaning step of cleaning the substrate with a V Γ supercritical fluid or a subcritical fluid. Therefore, the drying step and the like required in the liquid crystal cell manufacturing step become No, reducing the number of manufacturing steps. And 'this result can reduce the manufacturing cost when manufacturing the display device, and can also improve its productivity. In addition, since it is washed with a supercritical fluid or the like, no washing material remains, and it is possible to prevent white turbidity such as lightening of the black portion on the display screen. Also, the so-called array substrate means that there are electrodes and wiring on the substrate, and this paper size applies the Chinese National Standard (CNS) A4 specification < 210 X 297 public love > -------- l · --- j · '^ i — ll · --- order.Ίί ^ ----- line one (please «read the precautions on the back before filling out this page) -12- Economic and Intellectual Property Bureau employee printing cooperative printed A7 _B7________ 5. Description of the invention (10) Or, if necessary, and have a thin film transistor. Also, the term "opposing substrate" refers to those having electrodes or the like or necessary color filters on the substrate. Therefore, the aforementioned liquid crystal cell manufacturing step means a series of steps from the formation of electrodes and wiring on the substrate to the substrate manufacturing step until the completion of the liquid crystal cell. In addition, a step of adding a module step, that is, setting a driving circuit in the liquid crystal cell, is not included in the liquid crystal cell manufacturing step. In the foregoing method, the liquid crystal cell manufacturing step may include an alignment film forming step to form an alignment film on the array substrate and / or the opposite substrate; and the cleaning step may be used in the alignment film forming step. Before or after. According to the aforementioned method, a cleaning step with a supercritical fluid or the like before the step of forming the alignment film not only removes the dust on the substrate, but also does not cause the problem of residual detergent in the cleaning process as in the past. Therefore, a good alignment film can be manufactured. In addition, even if the cleaning step is performed after the alignment film is formed, the supercritical fluid does not cause any adverse effects such as deterioration of the alignment film. Therefore, the cleaning can be performed without considering the stability of the alignment film to the detergent. Processing to obtain an alignment film with good film surface cleanness. That is, if the alignment film is cleaned by the conventional liquid system cleaning treatment method, depending on the type of the detergent, the alignment film will be deteriorated due to chemical action, causing problems such as adverse effects. In the aforementioned washing step, not only the alignment film is not deteriorated, but the alignment energy is not reduced. In addition, since no cleaning material remains, it can suppress the phenomenon of tilting (disclination) or alignment flow, so not only can produce a liquid crystal display with good display characteristics, but also reduce the number of manufacturing steps. Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) ------------ installation ---- i --- 丨 --order ------- I-line ( Please read the notes on the back before filling out this page) -13- 469529 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (11) Reduce the manufacturing cost and improve its productivity. _ In the foregoing method, the liquid crystal cell manufacturing step may have the following steps: an alignment film forming step for forming an alignment film on the aforementioned array substrate and / or an opposite substrate; and an alignment processing step for the The alignment film is applied to an alignment processor; the washing step may be performed before and / or after at least one of the alignment film formation step or the alignment processing step. According to the foregoing method, in addition to the function and effect of the third invention in the scope of patent application, even if the washing step is performed after the alignment processing step, the alignment of the alignment film can be suppressed from being reduced, and the drying step can be omitted. . In the aforementioned method, the liquid crystal cell manufacturing step may have the following steps: a bonding step for bonding the aforementioned array substrate and the opposite substrate to form an empty cell; and a liquid crystal injection step, The liquid crystal is injected into the interior of the empty cell; the aforementioned washing step may be performed before and / or after at least one of the bonding step or the liquid crystal injection step, and because the substance in a supercritical fluid state is not only Low viscosity and highly diffusive, so even the part that the liquid system detergent cannot enter 'can easily penetrate. Therefore, if the washing step is performed after the bonding step according to the aforementioned method, the supercritical fluid or subcritical fluid can also enter the inside of the empty cells. Therefore, it is difficult to wash the empty cells by the previous cleaning method. internal. In addition, supercritical fluids and the like immediately change to a gas phase state under atmospheric pressure, and therefore, they do not remain inside the empty cells. Therefore, according to the aforementioned method, a display device having better display quality and the like can be manufactured. Further, in the conventional liquid system cleaning method, since a sealant deteriorates the sealant ', liquid crystal contamination and the like attached during the liquid crystal injection cannot be sufficiently cleaned. However, the size of this paper applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) ------ ---- 1—ιλ '^ _ ι! _ (Jing first read the precautions on the back before filling this page ) Order: --- 7 ---- line -14 A7 A7

五、發明說明(U) 而,如本發明般,使用超臨界流體等·進行洗淨步驟,則不 但不會使密封劑劣化且可充份去除附著於&晶胞表面及 液明注入口之液晶污染。 又,前述方法之一特徵是該陣列基板及相對基板係使 用樹脂基板。 又,過去之液體系洗淨處理須進行乾燥步驟等以去除 洗淨劑。具體言之,該乾燥步驟係進行熱處理等。因此, 有必要使用比樹脂基板耐熱性更好之基板,例如玻璃基板 (财熱溫度600°C )。又’由於樹脂基板有因洗淨劑之化學作 用而變質之顧慮,乃更限定了可使用之洗淨劑的範圍。 但’依前述方法’因超臨界流體或亞臨界流體於常溫常壓 下將立即氣化,因此無進行乾燥步驟之必要。所以,可製 造出具優良顯示特性等性能之顯示裝置。又,超臨界流趙 或亞臨界流體因不會使樹脂基板表面變質,而可製造出顯, 示特性優良且更輕量化之顯示裝置% 又’為了解決前述問題,本發明之顯示裝置之製造方 法乃用以製造具有於附有電極之基板與電極間設置有載子 輸送層及發光層之電激發光胞之顯示裝置者,而該製造方 法則包含有以下步驟,即:一附有電極之基板之製作步驟, 係用以製作該附有電極之基板者;及一電激發光胞製作步 驟,係用該附有電極之基板製作該電激發光胞者;且,該 電激發光胞製作步驟中並包含有一以超臨界流體或亞臨界 流體洗淨前述附有電極之基板之洗淨步驟。/ 依前述方法可製造出畫面上不產生黑點而顯示特性 本紙張尺度適用中國國家標準(CNS)A4規格(210 * 297公釐) -Ill------— I— --------------I — <請先閱讀背面之注意事項再填寫本頁) 經濟t智慧W.產局員Η消费合作社印製 烴濟部智慧財產局員工消費合作社印製 469529 A7 Γ------------ B?__ 五、發明說明(I3 ) 良好之EL顯示器,即顯示裝置的—種。 過[顯不器’其類示畫面上可辨識之黑點係起因 於過去之洗淨處理於處理後所殘留之洗淨劑。其次,於基 板表面殘留有洗淨劑時,即使以諸如純水洗淨處理後再 進灯預定溫度之乾燥步驟,基板表面仍將殘留有一定程度 之吸附水,無法完全去除。但是,依前述方法,&於超臨 界流艘等於大氣壓力下將立即氣化,因此在洗淨後基板表 面不會殘留洗淨物質。所以,可防止因洗淨劑之殘留而造 成發光性之降低。X,因不須進行將洗淨物質由基板表面 去除之乾燥步驟,而可減低製造成本。所以,可製造出一 發光性優且心特纟良好之器,&可減低製造成本 且同時提升其生產性。 於前述方法中,該電激發光胞製作步驟可具有以下步 驟,即.一載子輸送層形成步驟,係用以於該附有電極之 基板上形成該載子輸送層者;及一發光層形成步驟,係用 以於該載子輸送層上形成發光層者;又,前述洗淨步驟並 可於該載子輸送層形成步驟或發光層形成步驟中至少一方 之前及/或後進行。 又,於前述方法中,該電激發光胞製作步驟並可具有 以下步驟’即:一發光層形成步驟,係用以於該附有電極 之基板上形成該發光層者;及一載子輸送層形成步驟,係 用以於該發光層上形成載子輸送層者;又,前述洗淨步驟 則可於該載子輸送層形成步驟或發光層形成步驟中至少一 方之煎及A或後進行。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -16- <請先閱讀背面之注意事項再填寫本頁) -1-----It! — — ! — · B7 B7 經濟部智慧財產局員工消費合作杜印製 五、發明說明(l4) 依前述方法,在形成載子輪送層或發光層時,於該形 成步驟之前及/或後進行以超臨界流體等之洗淨步驟,將可 大為提高附有電極之基板或電極與載子輸送層或發光層間 之界面的清淨性 '藉此’乃可降低由電極將載子(電子或電 洞)注入時之障壁,而製造出具良好發光強度之EL顯示器。 於前述方法中,該電激發光胞製作步驟中並具有一貼 合步驟’以將該附有電極之基板和與其成對之相對基板相 貼合者;又’前述洗淨步驟則可於該貼合步驟之前及/或後 進行。 於前述方法中,該載子輸送層可構造成一電洞輸送層 或一電子輸送層。 於前述方法中,該附有電極之基板及相對基板可使用 樹脂基板。 本發明中之FP顯示器的製造方法,由於係以超臨界流 體等進行洗淨處理,故無須進行高溫下之乾燥步驟,且不 致使樹脂基板表面變質。因此,前述附有電極之基板及相 對基板可使用樹脂基板β藉此,可製造出顯示特性優良且 更輕量化之顯示裝置。 又’於前述方法中,該超臨界流雙或亞臨界流體可使 用於超臨界狀態之二氧化碳。二氧化碳,其臨界溫度存在 於常溫附近’且處於超臨界狀態下時具有適度的臨界溫度 與臨界壓力。又’二^碳對人體無毒性或腐蝕性並具不 燃性。因此,由於前述芩氡化碳具優良之使用性,故可望 提升其作業性等。 本紙張尺度舶巾㈣家辟(cNs)A^i g 297公釐) 裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) -17- 469529 A7 B7 _ 五、發明說明(l5) 又,於前述方法中,該洗淨步驟可為用超臨界流體或 亞臨界流體進行夕次洗淨者。又,在等量的洗淨物質下, 以超臨界流體等進行多次洗淨之多階段洗淨式比洗淨時一 次令超臨界流體等貯留一債定r時之:方式-,更能增加其洗 淨效率,且更能去除基板之表面污染。 (4) 有機物之去除裝置 又,為了解決前述問題,本發明之基板上之有機物的 去除裝置乃為一用以去除存在於基板上之有機物者,其包 含有:一反應槽,係用以收容該基板並以超臨界水或亞臨 界水氣化去除該基板者;一供給構件,係用以對該反應槽 供水者;一壓力控制構件,係用以將該反應搢内部加壓至 該水之臨界壓力以上者;及一溫度控制構件,係用以將該 反應槽内部加熱至該水之臨界湓度以上者。 具前述構造之去除裝置’可以超臨界水或亞臨界水氧 化去除存在於基板上之有機物。且,因不使用有害物質, 而於去除有機物時可確保作業之安全性β又因廢液中也不 含有害物質,而可進行簡便的廢液處理,不會對環境造成 不良影響。 於前述構造中’該反應槽可構造成具有至少220大氣壓 力以上耐壓性及375 °C以上耐熱性之氣密容器。 又,於前述構造中’該反應槽可同時收容多月該基板 於其内部*藉此,可同時進行去除多片基板之有機物,以 提升生產效率。 (5) 顯示裝置之製造裝置 本紙張尺度通用中國國家標準(CNS)A4規格(210 X 297公釐〉 <請先閱讀背面之注意事項再填寫本頁) 装--------訂·,1 —*'---•線 ί 經濟部智慧財產局員工消費合作社印製 -18 - 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(16) 又,為了解決前述問題’本發明之顯示裝置之製造裝 置乃為具有一用以洗淨基板之洗淨裝置,而該洗淨裝置則 包含有:一保持構件’係用以保持該基板者;一洗淨槽, 係用以枚容以該保持構件保持之該基板,並以超臨界流體 或亞臨界流體洗淨該基板者;及一供給構件,係用以供給 該超臨界流體或亞臨界流體至該洗淨槽者。 具前述構造之製造裝i主之淨裝置,因超臨界流體 等於大氣壓力下會產生由該基板表面立即氣化等相變化, 因此’可洗淨基板同時不會殘留洗淨物質於基板上,也就 是說,具前述構造之顯示裝置之製造裝置,因其具有洗淨 後不須進行洗刷處理或乾燥處理,且洗淨-時可防止洗淨物 質殘留之洗淨裝置,故可減低製造成本,且同時可製造出 具優良顯示镍展之屋。 於前述構造中’該供給構件之一特徵是設置有一用以 貯存該超臨界流體或亞臨界流體之聍存組件。 前述構造中,該貯存組件係獨立設置,若為與洗淨槽 相連通之構造時’則可於接近貯存組件中之程度的臨界狀 態下適時供應洗淨槽。 囷面之簡單說明 本發明之其他目的、特徵及優點,藉以下記載相信將 可充份了解。又’本發明之優點,經參照附圖逐次說明後, 相信亦可明白。 第1圖係碑明本發之篇二半導體裝置之製 造步驟之製造流程圖。 本紙張尺度適用令國國家標準(CNS)A4規格(2】〇 X 297公釐) -19· I — - ---— —ill — — -------I I I I I i I I I {請先閱讀背面之注意事項再填寫本頁) 46 95 2 9 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(Π) 第2圖係說明本發明之第2實施形態之顯示裝置之製造 步驟之製造流程圖。 第3圖係說明該第2實施形態之液晶顯示裝置之製造步 驟中陣列基板製作步驟之製造流程圖。 第4圖係說明該液晶顯示裝置之製造步驟中液晶胞製 作步驟之製造流程圖。 第5圖係說明該第2實施形態之電激發光顯示裝置之製 造步驟中附有電極之基板之製作步驟之製造流程圖。 第6圖係說明該電激發光顯示裝置之製造步驟中EL胞 元之製作步驟之製造流程圖。 第7圔係顯示本發明之第1實施例之光阻去除裝置之概 略說明囷。 第8囷係顯示於該第1實施例中,於玻璃基板t形成閘 極電極及閘極配線用之閘極金屬膜圖像之狀態之斷面模式圖。 第9圖係顯示於該第1實施例中,於玻璃晃.板上形成閘 極電極及閘極配線用之閘極金屬膜圈像之狀態之斷面模 式圖。 第10圖係說明於該第1實施例中第2回微影.成像步驟之 斷面模式圈。 第11圈.係顯示於該第1實施例中經形成有TF/Γ之斷面 模式囷。 第12圖係說明於該第1實施例中第3回微影成像步驟之 斷面模式 ---------:.---j-策--------訂·,--------線 ί (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公釐) -20· 發明說明(18) 第13圖係顯示於該第丨實施例中形成透明電極骐圖像 群及保護膜於TFT上之狀態之斷面模式囷。 第14圖係顯示本發明之第2實施例之液晶顯示裝置之 概略斷面模式圖。 第15圖(a)係本發明之第3實施例之洗淨裝置中之流體 迴路圊,第15圖(b)係本發明之第3實施例之另—洗淨裝置 中之流體迴路圖。 發明之最佳實施形態 〔第1實施形態〕 茲以第1圊說明本發明半導體裝置之製造方法之一實 施態樣。 本實施形態1之半導體裝置之製造方法,其特徴在於: 於微影成像步驟中之光阻去除步驟,係以超臨界水或亞臨 界水進行光阻之氣化去除以取代過去以光阻剥離液進行 光阻剥離者。 藉此’可在不損及元件特性下,將不要之光阻以低溫 去除’同時並去除污染物質,而製成半導體裝置。 又’所謂微影成像步驟係意指諸如轉移LSI等之圖像至 半導體基板上之微細加工者。更具體而言,係指包含圓像 化標的膜形成步驟、塗佈步綠、曝光步隸、影像步驟、姓 刻步驟及光阻去除步驟之一連串製程。又,本步驟可依光 阻之材料或用於曝光之射線源而以光微影成像、X射線微 影成像、電子束微影成像及離子束微影成像等方式進行。 又,該厨像北-標^的"艉务尊體基板上形成 本紙張又度適用中國國家標準規格(2〗0 X 297公釐) --------------裝— (請先閱讀背面之注意事項再填寫衣頁) -JST· 線_ 經濟部智慧財產局員工消費合作社印製 -21- 經濟部智慧財產局員工消費合作社印製 :i 6 9 5 2 9 A7 -- -B7 _ 五、發明說明(19) 將用以微細加工成預定形狀之薄膜者。於本步驟中該膜 形成方法可採用過去皆知的種種方法,並無特別限定。 該塗佈步驟,係用以於半導體基板上塗件光阻者e本 步驟可採用過去皆知的種種塗佈方法,具體而言,例如旋 轉方式或滾動方式等。又’光阻亦無特別限定,只要使用 對先(可視光線、紫外線)、x射線、電子束及離子束具有感 光性之感光性樹脂即可。又’光阻可使用照光處因鍵結而 變成不溶之負型光阻,亦可使用藉光反應而變成可溶之正 型光阻》 又夂H光步驟可採用諸如光罩曝光法,該光罩曝光 法係以經囷像化而呈現預定形狀之光罩為中介,使經塗佈 形成之光阻曝光者。又’如不以光罩為中介.也可採用直 接描續曝光法,該-基接法省直接照钿電子束於光 阻上以描繪者。 又,該顯像步称係使因曝光而於光阻中生成之潛_像顯 像化’而使光阻圖像化,形成預定形狀者。又,本步驟中 之顯像方法可採用過去皆知之掩弟方法. 又,該蝕刻步驟係用以於半導體基板表面或半導艘基 板上所設置之薄膜表面形成圈像者,且,係一將未形成有 作為罩幕(Ma&kl用之光阻的領域,施予化學或物理触刻 者。又’本步驟中之蚀刻方法可採用諸如乾蝕刻或溼蝕刻 等過去皆知之方法。 又’光阻去除步驟為本之—主要部份,傻見超薛界 水氧化°本一步—驟中終一究之^目的是在去除光阻, 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公餐) ---------I--ΐ -----HI --— 1-----^ ^ (請先閱讀背面之江意事項再填寫本頁> -22· B' B' 經濟部智慧財產局員工消費合作社印製 五、發明說明(20) 由於超臨界水可藉其氧化作用而完全氧化分解有機物之 光阻’因此,不會有光阻之殘渔發生。又,過去以光阻剝 離液進行光阻之剥離時’含於剝離液中之不純物在光阻剥 離後尚會留存下來,而構成一污染源。相反地,以超臨界 水進行去除之方法’若將半導體基板取出至大氣壓力下, 因超臨界水將立即由該半導體基板表面氣化,故不會造成 殘留。結果可使電晶體特性更安定。又,超臨界水也具有 將物質溶解出之溶解性,故可發揮對半導體基板之洗淨作 用。因此’不但可除去污染物質且可製造出具安疋性更為 優異之半導體裝置》 於此,所謂超臨界水係意指於超臨界狀態之水者,具 體而言,係處於臨界溫度375°C以上,且臨界壓力220大氣 壓力以上之環境下的水。又,所謂亞臨界水係意指處於到 達超臨界狀態前之狀態(即,亞臨界狀態)之水,具體而言, 係處於臨界溫度365°C〜375°C,且臨界壓力215大氣壓力 ~220大氣壓力之環境下的水。又,超臨界水宜使用電阻係 數10百萬歐姆以上之超純水而使其形成超臨界狀態或亞 臨界狀態者。又,因電阻係數10百萬歐姆以上時含有的不 純物極少’藉此,乃可充份抑制其於去除光阻後殘留不純 物。 又,於光阻去除步驟中也可添加氧化劑。藉此,可促 進有機物之氧化分省化一劑-可採用過去皆知者,並無 特別限定,例如氧等。但,如此並不只限於分解去除有機 物,就連基板都會受到氣化作用,造威^基板受損,因此, 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐) -23- ------------裝--------.訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部知」慧財產局員工消費合作社印製 469529 A7 五、發明說明(21) 適當設定氧化劑之種類或其添加條件是必要的又’當超 臨界水係以階段性的生成且包含大氣中之氧等時,就不須 考慮添加氧化劑。 〔第2實施形態〕 茲以第2圓〜第6囷說明本發明顯示裝置之一實施態 樣。 顯示裝置之製造步驟基本上包含有··一基板製作步 驟,該步驟係用以形成電極等以製作成對之基板者;一胞 元製作步爾,該步截係用以將該成對之基板相貼合以組成 一胞元者;及一模組製作步驟,該步驟係用以設置供驅動 胞元之媒動電路者。 而,本實施形態2之顯示裝置之製造方法,其―特徵在 於:於該基板製作步驟中藉微顯成像法以形成預定之元件 圖像時,係以超臨界水或亞臨界水進行氧化以去除光阻, 而取代過去以光阻剝離液等進行光阻之剝離者,藉此可在 不損及元件特性下,將不要之光阻以低溫去除,同時並去 除污染物質而製成顯示裝置。又,關於超臨界水及亞臨界 水,因於前述實施形態1中l要备此省略其詳細 說明。 又’本實施形態2之顯示裝置之製造方法,其又一特徵 在於:於該胞元製作步驟中,係以超臨界流體或亞臨界流 體進行基板之洗淨處理以取代過去之純水洗淨者藉此不 但可減少製造步驟數,使製造成本減低,同時不會使被洗 淨物(即基板)之表面變質,且洗淨時可防止洗淨物質殘留。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公藿) ------------{板--------訂---^---!線^ (請先閱讀背面之注意事項再填寫本頁) -24- 經濟银智慧^-產局員工消費合作社印製 A7 __ ____B7_ _ 五、發明說明(22 ) 又’該胞元製作步驟中係使用超臨界流體進行基板之 洗淨處理’其中所謂超臨界流體係意指於超迠界狀態之洗 淨物質’更詳而言之,即意指’由氣相與液相共存之狀態, 將温度及壓力提昇至超越臨界溫度Tc及臨界壓力pc,而使 氣液之界面消失’並形成富有流動性之單一相狀纪時之流 體。又,超臨界流體具有近似液體的密度及近似氣體的巨 大擴散常數’此為超臨界流體具有強大溶解力之主要原 因。總之’以一媒介溶解其他物質時,溶解力大之主要兩 個原因乃媒介分子數多,以及1介分子之浸透力大。又, 前述所謂亞臨界流體係意指於亞臨界狀態之洗淨物質,更 詳而言之,係意指處於到達超臨界狀態前之狀態之流體。 又’前述洗淨物質可使用過去皆知之物質,並無特別 限制,具艘而言可舉二氧化碳(Tc = 3l«C,pc=75 3x〗〇5pa)、 丙炫(Tc=96.7°C ,Pc=43‘4xl05Pa)、乙稀(Tc=9.9°C , Pc=52.2M05Pa)等為例,於此,本發明則可選c〇2+e為洗淨 物質。因C〇2之臨界溫度較其他可使用作為洗淨物質者 低’且處於超臨界狀態下時具有適度的臨界溫度與臨界壓 力。又,因C〇2對人趙無毒性且具不燃性等,使用性優良。 又’前述基板可使用過去皆知之種種物體,並無特別 限制。特別是使用樹脂基板時,過去以洗淨劑進行洗淨時 本有使基板表面變質等之不便,但如今使用超臨界流體就 不會產生這樣的問題。因此,即使是樹脂基板亦可適合洗 淨處理。又,樹脂基板並無特別限制,即使是表面上形成 有由聚合物等所形成之薄膜者,如前述,因超臨界流體等 本紙張尺度適用令國國家標準(CNS)A4規格(210x297公爱) -------------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) •25. 經濟部智慧財產局員工消費合作社印製 469529 A7 ______B7_五、發明說明(23 ) 不會使該薄膜變質,故仍適合洗淨。又,過去之洗淨方法, 由於須進行熱處理等以去除殘留之洗淨劑,故使用之基板 須具有一定程度的耐熱性《但,使用具有接近常溫之臨界 溫度之二氧化碳作為洗淨物質時,即使是耐熱性較低之基 板亦適合使用。 又,前述洗淨步驟亦可為_以^6^界流體等進行多次洗 淨者。此時’即使使用等量的超臨界流體,分多次洗淨之 方式比洗淨時一次貯留預定時間之方式,更能增加其洗淨 效率。藉此,更能去除基板之表面污染。 又’本實施形態2之發明,固可於顯示裝置之一連串製 造過程中’進行以超臨界水等氧化去除光阻,及,以超臨 界流體等洗淨基板二者,或亦可只進行其中任一者。 以下分別說明顯示裝置之具體例,即,LCD及ELD之 製造方法。 〔液晶顯示器〕 第3圖係說明陣列基板製作步驟之製造流程圖。 於LCD之製造方法中’基板製作步驟可分成陣列基板 製作步驟及相對基板製作步驟。陣列基板製作步驟係意指 於基板上形成氧化物;Indium Tin Oxide)等之畫 素電極或TFT等之一連串過程。又,於該陣列基板製作步 驟中,微影成像步驟通常係於欲形成諸如TFT或畫素電極 等時進行者。又,微影成像步驟並係於基板上形成薄膜後 (薄膜形成步驟)欲使該薄膜囷像化以呈現預定形狀時反覆 進行者。因此,本發明之主要满成要素,即以鈒臨_界水進 -----;---h---^裝-------訂-·--------線# (請先閱讀背面之注意事項再填寫本頁> 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 26-V. Description of the invention (U) In addition, as in the present invention, using a supercritical fluid, etc., for the washing step, not only does the sealant not be deteriorated, but it can be fully removed and attached to the surface of the &cell; LCD pollution. A feature of the aforementioned method is that a resin substrate is used for the array substrate and the counter substrate. In addition, in the conventional liquid system cleaning treatment, a drying step or the like was required to remove the detergent. Specifically, this drying step is performed by heat treatment or the like. Therefore, it is necessary to use a substrate having a higher heat resistance than a resin substrate, such as a glass substrate (financial heat temperature 600 ° C). In addition, because the resin substrate may be deteriorated due to the chemical action of the detergent, the range of detergents that can be used is more limited. However, according to the aforementioned method, since a supercritical fluid or a subcritical fluid will immediately vaporize at normal temperature and pressure, there is no need to perform a drying step. Therefore, a display device having excellent display characteristics and the like can be manufactured. In addition, the supercritical flow or subcritical fluid does not deteriorate the surface of the resin substrate, so that a display device with excellent display characteristics and lighter weight can be manufactured. Also, in order to solve the aforementioned problems, the display device of the present invention is manufactured. The method is used to manufacture a display device having an electrically excited photocell provided with a carrier transport layer and a light emitting layer between a substrate with an electrode and an electrode, and the manufacturing method includes the following steps: an electrode is attached The manufacturing steps of the substrate are used to make the substrate with an electrode; and the manufacturing step of the electrically excited photo cell is to use the substrate with the electrode to make the electrically excited photo cell; and the electrically excited photo cell The manufacturing step includes a cleaning step of cleaning the aforementioned substrate with electrodes with a supercritical fluid or a subcritical fluid. / According to the aforementioned method, the display characteristics can be produced without black spots on the screen. The paper size applies the Chinese National Standard (CNS) A4 specification (210 * 297 mm) -Ill ------- I-- ---- ---------- I — < Please read the notes on the back before filling out this page) Economy t Wisdom W. Printed by members of the Production Bureau Η Consumer Cooperatives Printed by the Ministry of Hydrocarbons Intellectual Property Bureau Employees Printed by Consumer Cooperatives 469529 A7 Γ ------------ B? __ 5. Description of the Invention (I3) A good EL display, that is, a kind of display device. The black dots that can be seen on the display screen are due to the cleaning agent remaining after the cleaning process in the past. Secondly, when a cleaning agent remains on the surface of the substrate, even if it is washed with pure water and then dried at a predetermined temperature of the lamp, a certain degree of adsorbed water remains on the substrate surface and cannot be completely removed. However, according to the aforementioned method, & the supercritical vessel will immediately vaporize at atmospheric pressure, so the substrate surface will not remain cleaned after cleaning. Therefore, it is possible to prevent the decrease in luminescence due to the residue of the detergent. X, since the drying step of removing the cleaning material from the substrate surface is not required, the manufacturing cost can be reduced. Therefore, it is possible to manufacture a device with excellent luminescence and good heartfelt, & can reduce the manufacturing cost and at the same time improve its productivity. In the foregoing method, the step of preparing the electrically excited photocell may include the following steps. A carrier transporting layer forming step is used to form the carrier transporting layer on the substrate with the electrode; and a light emitting layer. The forming step is used to form a light emitting layer on the carrier transporting layer; the aforementioned washing step may be performed before and / or after at least one of the carrier transporting layer forming step or the light emitting layer forming step. Also, in the foregoing method, the step of preparing the electrically excited photocell may include the following steps, that is, a light-emitting layer forming step for forming the light-emitting layer on the substrate with an electrode; and a carrier transport The layer forming step is used to form a carrier transporting layer on the light-emitting layer. In addition, the aforementioned washing step may be performed in at least one of the carrier transporting layer-forming step or the light-emitting layer forming step and after A or . This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -16- < Please read the notes on the back before filling this page) -1 ----- It! — —! — · B7 B7 Consumption cooperation by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs. Du V. Description of the invention (l4) According to the method described above, when the carrier wheel or light emitting layer is formed, supercritical fluid is used before and / or after the formation step. Such a cleaning step can greatly improve the cleanliness of the interface between the substrate with the electrode or the electrode and the carrier transport layer or the light-emitting layer, thereby reducing the carrier (electron or hole) injection by the electrode. The barrier of time, and EL display with good luminous intensity is manufactured. In the aforementioned method, the electro-excited photocell manufacturing step has a bonding step 'to bond the substrate with the electrode and the opposite substrate paired therewith; and' the washing step may be performed in the step Performed before and / or after the bonding step. In the foregoing method, the carrier transporting layer may be configured as a hole transporting layer or an electron transporting layer. In the aforementioned method, a resin substrate may be used as the electrode-attached substrate and the opposite substrate. The manufacturing method of the FP display in the present invention does not require a drying step at high temperature because the cleaning process is performed with a supercritical fluid or the like, and the surface of the resin substrate is not deteriorated. Therefore, a resin substrate β can be used for the aforementioned substrate with electrodes and the opposite substrate, thereby making it possible to produce a display device with excellent display characteristics and lighter weight. Also in the aforementioned method, the supercritical flow bi- or subcritical fluid can be used for carbon dioxide in a supercritical state. The critical temperature of carbon dioxide exists near normal temperature 'and has a moderate critical temperature and critical pressure when it is in a supercritical state. Also, the two carbons are non-toxic or corrosive to the human body and non-combustible. Therefore, since the aforementioned halogenated carbon has excellent usability, it is expected to improve its workability and the like. This paper is scaled with paper towels (cNs) A ^ ig 297 mm) Packing -------- Order --------- Line (Please read the precautions on the back before filling this page ) -17- 469529 A7 B7 _ V. Description of the invention (l5) In the foregoing method, the washing step may be performed by supercritical fluid or subcritical fluid for the next washing. In addition, under the same amount of cleaning material, the multi-stage washing method using multiple washings with supercritical fluids is more effective than washing when the supercritical fluids are stored one time at a time. Increasing its cleaning efficiency, and being able to remove surface contamination of the substrate. (4) Organic matter removing device In order to solve the aforementioned problems, the organic matter removing device on the substrate of the present invention is a device for removing organic matter existing on the substrate, which includes: a reaction tank for containing The substrate is removed by supercritical water or subcritical water gasification; a supply member is used to supply water to the reaction tank; a pressure control member is used to pressurize the inside of the reaction tank to the water A temperature above the critical pressure; and a temperature control member for heating the inside of the reaction tank to a temperature above the critical degree of the water. The removal device 'with the aforementioned structure can remove organic matter existing on the substrate by supercritical water or subcritical water oxidation. In addition, because no harmful substances are used, and the safety of the operation can be ensured when removing organic matter, and because no hazardous substances are contained in the waste liquid, simple waste liquid treatment can be performed without adversely affecting the environment. In the aforementioned structure, the reaction tank may be configured as an airtight container having a pressure resistance of at least 220 atmospheres and a heat resistance of 375 ° C or more. Also, in the aforementioned structure, the reaction tank can simultaneously hold the substrate inside it for several months *, thereby removing organic matter from multiple substrates at the same time to improve production efficiency. (5) Manufacturing device for display device The paper size is generally Chinese National Standard (CNS) A4 specification (210 X 297 mm> < Please read the precautions on the back before filling this page) Installation -------- Order ·, 1 — * '--- • Line ί Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -18-Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention (16) Also, in order to solve the aforementioned Question 'The manufacturing device of the display device of the present invention has a cleaning device for cleaning a substrate, and the cleaning device includes: a holding member' for holding the substrate; a cleaning tank, For enclosing the substrate held by the holding member and cleaning the substrate with a supercritical fluid or a subcritical fluid; and a supply member for supplying the supercritical fluid or the subcritical fluid to the cleaning Slots. With the aforementioned structure, the main net device is manufactured. Because supercritical fluid is equal to atmospheric pressure, phase changes such as immediate vaporization of the surface of the substrate will occur, so 'the substrate can be cleaned and no cleaning material remains on the substrate. That is to say, the manufacturing device of the display device with the foregoing structure has a washing device that does not require a washing treatment or a drying treatment after washing, and can prevent the residue of washing substances during washing, thereby reducing the manufacturing cost. , And at the same time can produce a house with excellent display nickel exhibition. In the aforementioned structure, one of the features of the supply member is a storage component for storing the supercritical fluid or subcritical fluid. In the aforementioned structure, the storage module is provided independently. If it is a structure communicating with the cleaning tank ', the cleaning tank can be supplied in a timely manner in a critical state close to that in the storage module. Brief Description of Others The other objects, features and advantages of the present invention will be fully understood by the following description. It is believed that the advantages of the present invention will be understood after successively explained with reference to the drawings. FIG. 1 is a manufacturing flow chart illustrating the manufacturing steps of the second semiconductor device of the present invention. The size of this paper is applicable to the national standard (CNS) A4 specification (2) 0X 297 mm. -19 · I —----— —ill — — ---------- IIIII i III {Please read first Note on the back, please fill out this page again) 46 95 2 9 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (Π) Figure 2 illustrates the manufacturing steps of the display device according to the second embodiment of the present invention Manufacturing flow chart. Fig. 3 is a manufacturing flowchart illustrating the steps of manufacturing the array substrate in the manufacturing steps of the liquid crystal display device of the second embodiment. FIG. 4 is a manufacturing flowchart illustrating the manufacturing steps of the liquid crystal cell in the manufacturing steps of the liquid crystal display device. Fig. 5 is a manufacturing flowchart illustrating the manufacturing steps of the substrate with electrodes in the manufacturing steps of the electroluminescent display device of the second embodiment. Fig. 6 is a manufacturing flowchart illustrating the manufacturing steps of the EL cell in the manufacturing steps of the electroluminescent display device. Fig. 7 is a schematic description of a photoresist removal device according to a first embodiment of the present invention. The eighth embodiment is a schematic sectional view showing a state where gate electrode and gate metal film images for gate wiring are formed on the glass substrate t in the first embodiment. Fig. 9 is a sectional view showing a state in which a gate electrode and a gate metal film ring image for gate wiring are formed on a glass plate in the first embodiment. Fig. 10 is a cross-sectional pattern circle illustrating the second lithography. Imaging step in the first embodiment. The eleventh circle is a sectional pattern 囷 in which TF / Γ is formed in the first embodiment. FIG. 12 is a cross-sectional view illustrating the third lithography imaging step in the first embodiment. , -------- line ί (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 χ 297 mm) -20 · Description of the invention (18 FIG. 13 is a cross-sectional view of a state where a transparent electrode (image group and protective film is formed on a TFT) is formed in the first embodiment. Fig. 14 is a schematic sectional view showing a liquid crystal display device according to a second embodiment of the present invention. Fig. 15 (a) is a fluid circuit in a cleaning device according to a third embodiment of the present invention, and Fig. 15 (b) is a diagram of a fluid circuit in another cleaning device according to the third embodiment of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION [First Embodiment] An embodiment of a method for manufacturing a semiconductor device according to the present invention will be described in the first paragraph. The method for manufacturing a semiconductor device according to the first embodiment is characterized in that the photoresist removal step in the lithography imaging step is a gasification removal of photoresist by supercritical water or subcritical water to replace the past photoresist peeling Liquid for photoresist peeling. Thereby, a semiconductor device can be manufactured by removing unnecessary photoresist at a low temperature without compromising the characteristics of the device and removing pollutants. The "lithographic imaging step" means a microfabricator who transfers an image of an LSI to a semiconductor substrate. More specifically, it refers to a series of processes including a film formation step of a circular image target, a coating step green, an exposure step, an image step, a lasting step, and a photoresist removal step. In addition, this step can be performed by means of photolithography, X-ray lithography, electron beam lithography, and ion beam lithography, depending on the material of the photoresist or the radiation source used for exposure. In addition, the paper formed on the substrate of the kitchen image North-standard ^ 's service body is suitable for Chinese national standard specifications (2〗 0 X 297 mm) ------------- -Packing— (Please read the precautions on the back before filling in the clothing page) -JST · LINE_Printed by the Employee Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economy-21- Printed by the Employee Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economy: i 6 9 5 2 9 A7--B7 _ V. Description of the invention (19) Those who will be micro-machined into a predetermined shape. The method for forming the film in this step can be performed by various methods known in the past, and is not particularly limited. This coating step is used to coat a photoresist on a semiconductor substrate. This step can use various coating methods known in the past, specifically, for example, a rotation method or a rolling method. The photoresist is not particularly limited as long as it uses a photosensitive resin that is sensitive to light (visible light, ultraviolet rays), x-rays, electron beams, and ion beams. The photoresist can be a negative photoresist that becomes insoluble due to bonding at the light, or a positive photoresist that becomes soluble by light reaction. Also, for the H photo step, a mask exposure method such as The photomask exposure method is a person who exposes a photoresist formed by coating by using a photomask that has a predetermined shape after being imaged. Also, if a photomask is not used as an intermediary, a direct exposure method can also be adopted, and the -based connection method directly irradiates the electron beam on the photoresist to depict the person. The development step is a method of forming a latent image generated by photoresist by exposure to image the photoresist to form a predetermined shape. In addition, the developing method in this step can be a masking method known in the past. In addition, the etching step is used to form a circle image on the surface of a semiconductor substrate or a thin film surface provided on a semiconductor substrate, and The area where the photoresist used as the mask (Ma & kl) is not formed is applied to a chemical or physical toucher. Also, the etching method in this step can be a conventional method such as dry etching or wet etching The photoresist removal step is the main part of it, and I am surprised to see that the super Xuejie water is oxidized. This step is the final step in this step. The purpose is to remove the photoresist. (210 X 297 public meals) --------- I--ΐ ----- HI --- 1 ----- ^ ^ (Please read the Jiang Yi matters on the back before filling in this page > -22 · B 'B' Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (20) Because supercritical water can completely oxidize and decompose organic matter by its oxidation effect, there will be no light. Residual fisheries occur. In the past, when the photoresist was peeled off with a photoresist stripping solution, After the photoresist is peeled off, the object will still remain and constitute a source of pollution. Conversely, the method of removing with supercritical water 'if the semiconductor substrate is taken out to atmospheric pressure, the supercritical water will be immediately removed from the surface of the semiconductor substrate. It will not cause residue. As a result, the characteristics of the transistor can be more stable. In addition, supercritical water also has the solubility to dissolve out substances, so it can play a role in cleaning semiconductor substrates. Therefore, 'not only can remove contaminated substances And it is possible to manufacture semiconductor devices with more excellent safety. ”Here, the so-called supercritical water means those in the supercritical state, specifically, the critical temperature is above 375 ° C, and the critical pressure is 220 atmospheres. Water in an environment above the force. Also, the so-called subcritical water means water in a state before reaching a supercritical state (that is, a subcritical state). Specifically, the water is at a critical temperature of 365 ° C ~ 375 ° C. And the water at the critical pressure of 215 atmosphere pressure to 220 atmosphere pressure. In addition, supercritical water should use ultra pure water with a resistivity of more than 10 million ohms to make it ultra-thin. Critical state or subcritical state. In addition, there are very few impurities contained when the resistivity is 10 million ohms or more. As a result, the impurities remaining after removing the photoresist can be sufficiently suppressed. Also, in the photoresist removal step, An oxidant can be added. This can promote the oxidization of organic matter and save a dose-it can be used in the past, and is not particularly limited, such as oxygen. Chemical damage, damage to the substrate, so this paper size applies to China National Standard (CNS) A4 (210x297 mm) -23- ------------ installation ----- ---. Order --------- line (please read the notes on the back before filling this page) The Ministry of Economy knows "Printed by the Consumer Property Cooperative of the Intellectual Property Bureau 469529 A7 V. Description of Invention (21) Appropriate It is necessary to set the type of the oxidant or the conditions for its addition. When the supercritical water system is generated in stages and contains oxygen in the atmosphere, it is not necessary to consider the addition of the oxidant. [Second Embodiment] An embodiment of the display device of the present invention will be described with reference to the second circle to the sixth circle. The manufacturing steps of a display device basically include a substrate manufacturing step, which is used to form electrodes and the like to make a pair of substrates; a cell manufacturing step is used to make the pair. The substrates are adhered to form a cell; and a module manufacturing step, which is used to set a medium moving circuit for driving the cell. In addition, the manufacturing method of the display device according to the second embodiment is characterized in that: when a predetermined element image is formed by a micro-imaging method in the substrate manufacturing step, oxidation is performed with supercritical water or subcritical water to Remove the photoresist, and replace those who used the photoresist stripping solution to remove the photoresist in the past, so that the unnecessary photoresist can be removed at low temperature without compromising the characteristics of the device, and the pollutants can be removed to make the display . The supercritical water and subcritical water are omitted in the detailed description because they are prepared in the first embodiment. The manufacturing method of the display device according to the second embodiment is further characterized in that in the cell manufacturing step, the substrate is cleaned with a supercritical fluid or a subcritical fluid to replace the previous pure water cleaning. This can not only reduce the number of manufacturing steps and reduce the manufacturing cost, but also will not cause the surface of the object to be cleaned (ie, the substrate) to be deteriorated, and it can prevent the residue of the cleaning material during cleaning. This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 cm) ------------ {板 -------- Order --- ^ ---! Line ^ (Please read the notes on the back before filling this page) -24- Economic Bank Wisdom ^-Printed by the Consumer Bureau of Industry Bureau A7 __ ____B7_ _ V. Description of the Invention (22) and 'The cell production steps Cleaning of substrates using supercritical fluids, where the so-called supercritical flow system means cleaning substances in a supermarine state, more specifically, it means' a state where the gas phase and the liquid phase coexist, The temperature and pressure are increased beyond the critical temperature Tc and the critical pressure pc, so that the gas-liquid interface disappears, and a single-phase fluid with rich fluidity is formed. In addition, the supercritical fluid has an approximate liquid density and a gas-like large diffusion constant. This is the main reason why the supercritical fluid has a strong dissolving power. In short, when using one medium to dissolve other substances, the two main reasons for the large dissolving power are the large number of molecules in the medium and the large penetrating power of one molecule. The aforementioned subcritical flow system means a cleaning substance in a subcritical state, and more specifically, it means a fluid in a state before reaching a supercritical state. Also, the aforementioned cleaning materials can be materials known in the past, and there are no particular restrictions. For ships, carbon dioxide (Tc = 3l «C, pc = 75 3x〗 5pa), Bingxuan (Tc = 96.7 ° C) , Pc = 43'4xl05Pa), ethylene (Tc = 9.9 ° C, Pc = 52.2M05Pa) and the like are taken as examples. Herein, in the present invention, co2 + e can be selected as a cleaning substance. Because the critical temperature of CO2 is lower than that of other materials that can be used as cleaning materials, and it has a moderate critical temperature and critical pressure in a supercritical state. In addition, because CO2 is non-toxic to human Zhao and non-combustible, it has excellent usability. In addition, the substrate can be made of various conventionally known objects, and is not particularly limited. In particular, when a resin substrate is used, there have been inconveniences such as deterioration of the surface of the substrate when the substrate was cleaned with a detergent. However, such a problem is not caused by using a supercritical fluid today. Therefore, even a resin substrate is suitable for cleaning processing. In addition, the resin substrate is not particularly limited. Even if a thin film made of a polymer or the like is formed on the surface, as mentioned above, the national paper standard (CNS) A4 (210x297) is applied because of the paper size of supercritical fluid. ) ------------- Installation -------- Order --------- Line (Please read the precautions on the back before filling this page) • 25. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 469529 A7 ______B7_ V. Invention Description (23) The film will not deteriorate, so it is still suitable for cleaning. In addition, in the past cleaning methods, since a heat treatment or the like is required to remove the remaining cleaning agent, the substrate used must have a certain degree of heat resistance. However, when carbon dioxide having a critical temperature close to normal temperature is used as the cleaning material, It is suitable for use even on substrates with low heat resistance. In addition, the aforementioned washing step may be one in which washing is performed multiple times with a fluid such as ^ 6 ^. At this time, even if an equal amount of supercritical fluid is used, the method of washing in multiple times can increase the washing efficiency more than the method of storing for a predetermined time at a time during washing. Thereby, the surface contamination of the substrate can be more removed. In addition, the invention of the second embodiment can be used to remove photoresist by oxidation with supercritical water and the like, and the substrate can be cleaned by supercritical fluid or other methods. Either. Hereinafter, specific examples of the display device, that is, the manufacturing method of the LCD and the ELD will be described. [Liquid Crystal Display] FIG. 3 is a manufacturing flowchart illustrating the manufacturing steps of the array substrate. In the LCD manufacturing method, the substrate manufacturing step can be divided into an array substrate manufacturing step and an opposite substrate manufacturing step. An array substrate manufacturing step means a series of processes such as forming an oxide on a substrate; pixel electrodes such as Indium Tin Oxide) or TFTs. In the array substrate manufacturing step, the lithography imaging step is usually performed when a TFT or a pixel electrode is to be formed. The lithography imaging step is performed repeatedly after forming a thin film on a substrate (thin film forming step) when the thin film is to be imaged to have a predetermined shape. Therefore, the main full element of the present invention is to take the Lin_Jie Shuijin --------; --- h --- ^ equipment ------- order ------------ -线 # (Please read the precautions on the back before filling in this page> This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 26-

經濟部智慧林產局員工消"合作社印製 五、發明說明(24) 行之去除光阻步驟,可於陣列基板製作步驟各階段中反覆 進行之微影成像步驟中的至少一個階段或全部階段進行 之。如此,乃可於陣列基板製作步驟中,使用超臨界水進 行光阻去除步驟,而於低溫下將光阻氧化去除,因此可避 免損及TFT特性《因為使用超臨界水進行光阻之去除時, 可處於較400t低且不會使TFTf損之處理溫度的緣故5 又’過去以光阻剝離液進行光阻之剝離時,含於剝離液中 之不純物在光阻剝離後尚會殘留下來,而構成一污染源。 該不純物之污染’將使諸和特性等呈現不安定之狀 態,而導致顯示品質之下降。相反地,以超臨界水進行去 除之方法’若將基板取出至大氣壓力下,因超臨界水將立 即由該基板表面氣化,故不會造成殘留β此結果可使TFT 特性更安定。又’超臨界水並具有將物質溶解出之溶解 性,故可發揮對基板之洗淨作用。因此,不但可除去污染 物質且可製造出安定性更為優異之顯示裝置。 又,程中’前述胞元製作步驟即相當於液晶 胞製作步驟。該步驟,更具體而言係意指以具有IT〇等之 畫素電極或TFT等之陣列基板’及具有相對電極或濾色器 等之相對基板為起始材料,而進行後續一連串之處拽者。 具體而言’如第4圈所示,首先準備一以陣列基板製作 步驟製作成之陣列基板,然後將陣列基板塗佈上配向膜材 料後,接著進行乾燥及焙燒,以形成一具有預定膜厚之配 向膜(配向膜形成步驟)。另外,並採用奧俞述相同之方法, 於以相對基板製作步驟製作成之相對基板上形成配向摸。 本紙張尺度適用中國國家標準(CNS)A4規格(2〗0 X 297公釐) I— II — ---I---I ^ I I ! I J I I {請先閱讀背面之注意事項再填寫本頁) -27- A7 469529 _____B7 _ 五、發明說明(25 ) 其次’以諸如研磨處理等方法將陣列基板及相對基板 上形成之配向膜施予配向處理(配向處理步驟之後,於 陣列基板或相對基板任一方印刷上熱硬化型密封劑後,散 佈間隔物質。又’密封劑之塗佈形狀係形成缺液晶注入口 部份之框狀圓樣。接著’令配向膜彼此相對並將兩基板貼 合後’加熱密封劑以使其硬化,而組成一空胞元(貼合步 称)。 接著’以諸如真空注入法等朝空胞元内部注入液晶材 料等後,將液晶注入口密封’以製作液晶胞(液晶注入步 驟)。 然後’於該液晶胞内安裝驅動電路等(模組步驟),以 製作本實施形態之LCD。 於此,構成本發明主要部份之洗淨步驟可於前述配向 膜形成步驟前進行。此時,洗淨步驟之目的為將晬列基板 上所附着之塵埃及有機物質等溶解去除。過去之液體系洗 淨法’於洗淨處理後須依序進行洗刷步驟及乾燥步驟等, 例如以純水進行洗淨時,即須進行乾燥步驟或除水步驟以 去除基板上殘留之純水。但,超臨界流體洗淨法則由於將 基板由洗淨槽取出至大氣壓力下時,超臨界流體等將立即 由該基板表面氣化,故不會殘留洗淨物質。因此,可於基 板表面形成成膜性及密着性等經提昇之配向膜。又,因不 會使基板上形成之ITO或TFT等劣化,故不會使顯示品質下 降。 又’前述洗淨步驟亦可於配向膜形成步驟之後進行。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)Employees of the Smart Forest Products Bureau of the Ministry of Economic Affairs " Printed by Cooperatives V. Invention Description (24) The photoresist removal step can be performed at least one or all of the lithography imaging steps in each stage of the array substrate manufacturing step. Do it. In this way, the photoresist removal step can be performed using supercritical water in the array substrate manufacturing step, and the photoresist can be oxidized and removed at low temperature, so it can avoid damaging the TFT characteristics. It can be at a lower processing temperature than 400t and will not damage the TFTf. 5 In the past, when the photoresist was peeled off with a photoresist stripping solution, impurities contained in the stripping solution would remain after the photoresist stripping. It constitutes a source of pollution. The contamination of the impurities will cause the characteristics of the sum and the like to appear unstable, which will lead to a decline in display quality. On the contrary, if the method of removing with supercritical water is used ', if the substrate is taken out to atmospheric pressure, the supercritical water will be immediately vaporized from the surface of the substrate, so no residual β will be caused. This results in more stable TFT characteristics. Since 'supercritical water' has solubility to dissolve substances, it can exert a cleaning effect on the substrate. Therefore, not only the pollutants can be removed, but also a display device having more excellent stability can be manufactured. It is to be noted that the above-mentioned cell manufacturing step is equivalent to the liquid crystal cell manufacturing step. This step more specifically means that an array substrate with pixel electrodes or TFTs, such as IT0, and an opposite substrate with opposite electrodes or color filters, etc. are used as starting materials, and a subsequent series of place dragging is performed. By. Specifically, as shown in the fourth circle, first, an array substrate prepared by the array substrate manufacturing step is prepared, and then the array substrate is coated with an alignment film material, and then dried and fired to form a predetermined film thickness. Alignment film (alignment film formation step). In addition, using the same method described by Ao Yu, an alignment pattern is formed on the opposite substrate produced in the opposite substrate production step. This paper size applies to China National Standard (CNS) A4 specifications (2〗 0 X 297 mm) I— II — --- I --- I ^ II! IJII {Please read the precautions on the back before filling this page) -27- A7 469529 _____B7 _ V. Description of the invention (25) Secondly, the alignment film formed on the array substrate and the opposite substrate is subjected to an alignment treatment by a method such as a polishing treatment (after the alignment processing step, the array substrate or the opposite substrate is subjected to any After one side is printed with a thermosetting sealant, the spacer material is spread. Then, the sealant is applied in the shape of a frame-shaped circle without a liquid crystal injection port. Then, the alignment films are opposed to each other and the two substrates are bonded together. 'The sealant is heated to harden it to form an empty cell (combination step). Then,' the liquid crystal injection port is sealed after the liquid crystal material is injected into the empty cell by a vacuum injection method, etc. 'to make a liquid crystal cell (Liquid crystal injection step). Then, a driving circuit and the like (module step) are installed in the liquid crystal cell to make the LCD of this embodiment. Here, the cleaning steps constituting the main part of the present invention can be performed as described above. It is carried out before the film formation step. At this time, the purpose of the cleaning step is to dissolve and remove dust, organic substances, and the like attached to the substrate of the queue. In the past, the liquid system cleaning method must be sequentially washed after the cleaning process. Steps and drying steps, for example, when cleaning with pure water, a drying step or a water removal step must be performed to remove the pure water remaining on the substrate. However, the supercritical fluid cleaning method requires the substrate to be removed from the cleaning tank to At atmospheric pressure, supercritical fluids and the like are immediately vaporized from the surface of the substrate, so no cleaning material remains. Therefore, it is possible to form improved alignment films such as film-forming and adhesion on the surface of the substrate. It will degrade the ITO, TFT, etc. formed on the substrate, so it will not reduce the display quality. Also, the aforementioned cleaning step can also be performed after the alignment film formation step. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm)

If--| — — I— ^---ml I I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -28- 經濟部智慧財產局員工消費合作社印製 A7 _________B7___ 五、發明說明(26 ) 如同前述,以超臨界流體等進行洗淨,因不會使配向膜變 質及劣化,且不殘留洗淨物質,故可防止配向膜之配向能 降低且可溶解去除污染物質。藉此,可抑制產生顯示黑色 部伤變淡等白濁化或配向流動現像,而製造出顯示特性優 良之液晶顯示器e又,因不需要洗淨後之乾焊步驟,故不 但可減少製造步驟數,同時亦可減低製造成本。 又’前述洗淨向處理步驟之後進行。藉 此,可充分去除諸如進行研磨處理(即配向處理)時所產生 之塵埃(具體而言,即配向膜之屑等),且不會使配向臈變 質。因此’即使是於配向處理後進行洗淨也可防止配向膜 劣化,(斜向錯位;現像極少且可 抑制發生顯示黑色部份變淡等白濁化或配向流動之配向 膜。又’因不需要於液體系洗淨法中所必須之乾燥步驟 等,故不但可減少製造步驟數,同時亦可減低製造成本。 又’前述洗淨步驟亦可於貼合步驟之後迨行,以洗淨 空胞元。如前述可知,於貼合步驟中須進行熱處理,以使 密封劑熱硬化,而於熱處理時,熱硬化型密封劑之揮發成 份將附着於基板而造成污染,且,貼合時,塵埃等也會侵 入空胞元内。又,藉過去之處 内部等以去除污染物質或塵埃,且,即使是進入空胞元内 進行洗淨’亦有極高之可能性將洗淨劑殘留於空胞元内 部,而產生顯示畫面部份白濁化等顯示性能劣化之問題。 由於以上總總理由,過去之洗淨處理乃無法到空胞元進行 洗淨。但疋,於超臨界流體洗淨法中,由於處於超臨界狀 本紙張尺度適用中國國家標準(CNS)A4規格C297公爱) 111 II - I I I I 1 I I ^ I I I - I — II (請先閱讀背面之注意事項再填寫本頁) -29- 4 6 9 5 2 9 A7 ___ B7 五、發明說明(27) 態之洗淨物質’不但粘性低,且具高度擴散性,即使是對 液體系洗淨劑不能進行之部份,亦可輕易滲透。因此,可 輕易去除存在於空胞元内部之洗淨物質。又,因超臨界流 體於常壓下將立即氣化,故不會殘留於空胞元内部,而可 製造出具更優良顯示性能之顯示裝置。 又’空胞元是一種在將胞元間隙精密設計及控制下製 得而不容許自由變形之構造物。另外,本發明,在使用諸 如C02作為洗淨物質時,如上所述, 31°C ’乃於常溫附近,因此洗淨時空胞元不會產生過大的 熱應力而發生熱應力所造成之變形。職是之故,乃不致像 空胞元基板面内之胞元間隙不均一,而製造出具良好顯示 特性之液晶顯示器。 又,前述洗淨步驟亦可於液晶注入步驟之後進行。藉 此,可去除注入液晶時附着於平板表面或液晶注入口之液 晶污染。 〔電激發光顯示_器_〕 乓LD之層疊構造固然有多種不同之態樣,但基本上其 構造是於基板上堆疊陽極、載子輸送層(電洞輪送層或電子 輸送層)、發光層及陰極而成。其次,方法中, 所謂附有電極之基板製作步驟係意指於基板上由丄^ 所形成之陽極箄之一遠車遇鋥。又,除前述各層之外,可 視需要包含單層或多層諸如電子輸送層等之其他疊層,此 外,除前述必要之構造外,並_可全部诋用^紙-分H屬元件 等之術。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱> (請先閱讀背面之注意事項再填寫本頁) 裝!---—訂--!| 線ί 經濟部智慧財產局員工消費合作社印製 •30- 五、發明說明(28) ί I -----------裝 i I (請先閱讀背面之注意事項再填寫本頁) 又,於附有電極之基板製作步驟中欲將諸如陽極等圖 像化使其呈現所希望之形狀時,也須進行微影成像步驟(參 考第5圊)。其次,於該微盤成像步驟中供趕臨界水進行光 阻去除步驟,可防止發生過去以光阻剝離液進行光阻之剝 離時,含於剝離液内之不純物將於光阻剝離後殘留之污 染。因此’不會於顯示畫面產生肉眼可視之黑點等,而可 製造出具優良顯示特性之ELD。 又’於胞元製作步驟係意指以具有陽極 等之附有電極之基板為起始材料而進行後續一連串之處 理者’以下將具體說明。第6圖係說明ELD製造步驟之製造 流程圖。 --線· 首先,以附有電極之基板製作步騍製作出於基板上形 成有由諸如ITO所形成之陽極之附有電極之基板n接著, 以過去皆知之方法將電洞輸送層(即載子輸送層)之膜形成 於該附有電極之基板上(載子輸送層形成步驟)。 經濟部智慧林產局員工消費合作社印製 然後’於該電洞輸送層上形成具有發光機能之發光層 (發光層形成步驟)。形成發光層之方法可採用過去皆知之 方法’例如蒸鍍法、旋轉塗佈法、鑄造法及LB法等β又, 亦可採用爾後開發之發光層形成。接著,以過去皆知之方 法將由諸如鋁等所形成之陰極(電極)形成於該發光層 上’以製作EL胞元。又,亦可於形成該陰極後,將與附有 電極之基板成對之相對基板貼附於該陰極侧*而成為EL胞 元 最省灌為·電_路.農支.裝_於該EL胞元(模組步驟),以 ΟΙ- 本紙張尺度適用中國國家標準(CNS)A4規格(2J〇 X 297公釐) A7 6 95 2 9 ^------B7____ 五、發明說明(29 ) 製作本實施形態之ELD » 於此,前述洗淨步称可於該電洞輸送層形成前進行。 此時,洗淨步驟之目的為將附着於基板上之塵埃或有機物 質等溶解去除。又,因超臨界流體等於大氣壓力下將氣 化’故不會殘留洗淨物質。因此,將可提高陽極與電洞輸 送層間之界面的清淨性’且可降低由陽極將電洞注入時之 障壁,結果乃可使發光強度提高。又,前述洗淨步驟亦可 於該載子輸送層形成步驟之後進行《此時,其目的為去除 存在於表面之吸附水等》又,前述洗淨步称並可於發光層 形成步驟之後進行。藉此,將可提高發光層與陰極間之界 面的清淨性’且可降低由陰極將電子注入時之障壁。因 此’可提高發光強度。又,前述洗淨步驟並可於附有電極 之基板與相對基板貼合以製作EL胞元之貼合步驟之後進 行。 如此’於EL胞元之製作中進行超臨界流體洗淨法,將 可使陽極或陰極及電洞輸送層或發光層間之界面呈現清 淨之狀態,而提高發光強度。又,過去之洗淨法(純水等) 會於基板表面等殘留水等,但本發明中由於超臨界流體等 於常溫常壓下將立即氣化,故不會殘留洗淨物質。因此, 不會於顯示畫面產生肉眼可視之黑點,而可製造出具優良 顯示特性之_E1D ?又,因不需要乾燥步驟等,故可減少製 造步驟數’使製造成本減低。 又’本實施形態2 ’即上述LCD或ELD之製造方法,亦 適用於包含有部份不同之類似步驟之製造方法。舉例言 本紙張尺度適用中國國豕標準(CNS)A4規格{210 X 297公爱) --------U----^ 裝 ------—訂V---一-----線{ ί /- \ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -32- 經濟部智慧;έ產局員工湞費合作社印製 A7 ____B7___ -------- 五、發明說明(3〇) 之,於ELD中以電子輸送層作為載子輸送層時,在形成有 陰極之基板上形成發光層之發光層形成步驟後,進行形成 電子輸送層於該發光層上之載子輸送層形成步驟,進而, 於發光層上形成陽極以製作EL胞元。此時,前述洗淨步驟 可於發光層形成步驟及載子輸送層形成步驟中至少一方 之步驟前及/或後進行。又’依照載子輪送層及發光層等之 各層構造’亦可將前述洗淨步驟於各步驟中至少一個步驟 前及/或後適時進行。 以下將詳細說明本發明之任素如+只要在不 超過本發明要旨之範圍内,本發明之應用並不限於以下實 施例。 (實施例1 ) 首先’準備一預先洗淨好且具透明性之玻璃基板1,接 著’以CVD法於該玻璃基板1上形成由二氧化矽(Si〇2)所形 成之下塗佈膜2’該下沴佈堪|之〇·4微米。 其次,以電漿CVD法於該下塗佈膜2上形成將作為半導 體膜之無不純物之非晶質矽(i型3_51)膜3,該非晶質矽膜3 之膜厚為50nm。然後,再以電漿CVD法於非晶質矽膜3上 形成由SiNx膜所形成之閉極絶緣膜4,該問極絶緣膜4之膜 厚為150nm。接著,在真空狀態下以濺鍍法於閘極絶緣膜4 上形成由Al-Zr(97 : 3)合金所形成之閘極電極(圖中未示) 及閘極配線用之閉極配線金屬膜圖像5,其膜厚約為 200nm。 接著,以旋轉方式將臈厚1.5微米之感光性材料{商品 本紙張尺度適用中國國家標準(CNS)A4規格<210 X 297公釐)If-- | — — I— ^ --- ml II (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics -28 A7 _________B7___ V. Description of the invention (26) As mentioned above, cleaning with supercritical fluid etc. does not deteriorate or degrade the alignment film, and does not leave any cleaning material, so it can prevent the alignment of the alignment film from decreasing and dissolving. Remove pollutants. As a result, it is possible to suppress the occurrence of white turbidity such as the display of the black part becoming lighter or to align the flow phenomenon, and to produce a liquid crystal display with excellent display characteristics. Also, since a dry welding step after washing is not required, the number of manufacturing steps can be reduced. At the same time, it can also reduce manufacturing costs. Furthermore, the aforementioned washing-direction treatment step is performed. This can sufficiently remove dust (such as swarf of an alignment film, etc.) generated during a grinding process (that is, an alignment process) without deteriorating the alignment plutonium. Therefore, 'the alignment film can be prevented from being deteriorated even if it is cleaned after the alignment treatment, (oblique dislocation; there are very few images, and it is possible to suppress the occurrence of white turbidity such as lightening of black parts or alignment flow.' The drying steps required in the liquid system washing method can not only reduce the number of manufacturing steps, but also reduce the manufacturing cost. Also, the aforementioned washing step can also be performed after the bonding step to clean the air cells. As can be seen from the foregoing, heat treatment is required in the bonding step to thermally harden the sealant, and during heat treatment, the volatile components of the thermosetting sealant will adhere to the substrate and cause pollution, and during bonding, dust, etc. It will also invade into the empty cell. Also, the inside of the empty cell is used to remove pollutants or dust, and even if it is washed into the empty cell, there is a high possibility that the detergent will remain in the empty cell. Inside the cell, there is a problem of deterioration of display performance such as white turbidity of the display screen. Due to the above-mentioned prime minister's reason, the previous cleaning treatment could not be performed in the empty cell. However, Yu Chao In the international fluid cleaning method, because the paper is in a supercritical state, the Chinese National Standard (CNS) A4 specification C297 is applicable. 111 II-IIII 1 II ^ III-I — II (Please read the precautions on the back before filling (This page) -29- 4 6 9 5 2 9 A7 ___ B7 V. Description of the invention (27) The cleaning substance in the state (27) is not only low in viscosity, but also highly diffusive, even for the parts that cannot be used for liquid system detergents. Can also easily penetrate. Therefore, the washing substances existing inside the empty cells can be easily removed. In addition, since the supercritical fluid will immediately vaporize under normal pressure, it will not remain inside the empty cell, and a display device with better display performance can be manufactured. Also, the 'empty cell' is a structure that is made under the precise design and control of cell gaps and does not allow free deformation. In addition, when the present invention uses, for example, C02 as a cleaning substance, as described above, 31 ° C 'is near normal temperature, so that the space cell does not generate excessive thermal stress during cleaning and deformation due to thermal stress does not occur. The reason is that it does not cause uneven cell gaps in the plane of the empty cell substrate, and produces a liquid crystal display with good display characteristics. The cleaning step may be performed after the liquid crystal injection step. This can remove liquid crystal contamination attached to the surface of the flat panel or the liquid crystal injection port when liquid crystal is injected. [Electro-excited light display_device_] Although the stacked structure of pong LD has many different aspects, but basically its structure is to stack the anode, carrier transport layer (hole hole transport layer or electron transport layer) on the substrate, Light emitting layer and cathode. Secondly, in the method, the step of making a substrate with an electrode means that one of the anodes formed by 丄 on the substrate is driven away from the vehicle. In addition, in addition to the foregoing layers, a single layer or a plurality of other layers, such as an electron transport layer, may be included as necessary. In addition, in addition to the aforementioned necessary structures, all the techniques of ^ paper-dividing H-type elements can be used. . This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 Public Love) (Please read the precautions on the back before filling this page) Packing! ----Order-! | Line ί Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau ’s Consumer Cooperatives • 30- V. Invention Description (28) ί I ----------- Install i I (Please read the precautions on the back before filling this page) Also, attached In order to image the substrate such as the anode in the manufacturing step of the electrode so as to have a desired shape, a lithography imaging step (refer to Section 5) must be performed. Secondly, critical water is supplied in this microdisk imaging step. The photoresist removal step can prevent the contamination remaining from the impure substances contained in the stripping solution after the photoresist is peeled off with the photoresist stripping solution in the past. Therefore, 'it will not be visible to the naked eye on the display screen. Black dots, etc., can produce ELD with excellent display characteristics. Also, 'the cell production step means that the substrate with an anode and other electrodes is used as the starting material to perform a subsequent series of processors' will be described in detail below. Figure 6 illustrates the manufacturing steps of ELD First, the substrate-attached electrode with an electrode such as ITO is formed on the substrate with the steps of making the substrate with the electrode n. The film of the hole transporting layer (ie, the carrier transporting layer) is formed on the substrate with the electrode (the carrier transporting layer forming step). It is printed by the consumer cooperative of the Smart Forestry Product Bureau of the Ministry of Economic Affairs and then 'formed on the hole transporting layer. A light-emitting layer (light-emitting layer forming step) having a light-emitting function. The method for forming the light-emitting layer can be a method known in the past, such as a vapor deposition method, a spin coating method, a casting method, and a LB method. The light emitting layer is formed. Next, a cathode (electrode) formed of, for example, aluminum is formed on the light emitting layer by a method known in the past to make EL cells. Alternatively, after forming the cathode, The substrates with electrodes are paired with the opposite substrates attached to the cathode side * to become the most efficient EL cell to save electricity, electricity, roads, agricultural branches, and equipment. Installed on the EL cell (module step). Paper size applicable to China Standard (CNS) A4 (2J〇X 297 mm) A7 6 95 2 9 ^ ------ B7____ V. Description of the invention (29) Production of the ELD of this embodiment »Here, the aforementioned washing steps can be called It is performed before the formation of the hole transporting layer. At this time, the purpose of the cleaning step is to dissolve and remove dust, organic substances, etc. attached to the substrate. In addition, since the supercritical fluid is equal to atmospheric pressure, it will not be gasified, so it will not Residual cleaning material. Therefore, the cleanliness of the interface between the anode and the hole transport layer will be improved, and the barrier when the hole is injected by the anode can be reduced. As a result, the luminous intensity can be improved. Also, the aforementioned washing step is also "The purpose of this step is to remove adsorbed water existing on the surface" may be performed after the carrier transporting layer forming step. The aforementioned washing step may be performed after the light emitting layer forming step. Thereby, the cleanliness of the interface between the light emitting layer and the cathode can be improved ', and the barrier when electrons are injected from the cathode can be reduced. Therefore, 'can increase the luminous intensity. In addition, the aforementioned washing step may be performed after the laminating step in which an electrode-attached substrate and an opposite substrate are attached to form an EL cell. In this way, the supercritical fluid cleaning method in the production of EL cells will make the interface between the anode or cathode and the hole transporting layer or the light-emitting layer appear clean, thereby increasing the light emission intensity. In the past cleaning methods (pure water, etc.), water and the like remained on the surface of the substrate. However, in the present invention, since the supercritical fluid is vaporized immediately at normal temperature and pressure, no cleaning material remains. Therefore, no black spots visible to the naked eye are generated on the display screen, and _E1D with excellent display characteristics can be manufactured. Moreover, since no drying step is required, the number of manufacturing steps can be reduced 'and the manufacturing cost can be reduced. Also, "this embodiment 2", that is, the manufacturing method of the above-mentioned LCD or ELD, is also applicable to a manufacturing method including similar steps with some differences. For example, this paper size is applicable to China National Standard (CNS) A4 specification {210 X 297 public love) -------- U ---- ^ Installation -------- Order V --- One ----- 线 {ί /-\ (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -32- Printed by the Ministry of Economic Affairs; A7 ____B7___ -------- 5. Description of the invention (30) In the ELD, when the electron transport layer is used as the carrier transport layer, after the light emitting layer forming step of forming the light emitting layer on the substrate on which the cathode is formed A carrier transporting layer forming step of forming an electron transporting layer on the light emitting layer is performed, and further, an anode is formed on the light emitting layer to make an EL cell. At this time, the aforementioned washing step may be performed before and / or after at least one of the light-emitting layer forming step and the carrier transporting layer forming step. In addition, according to the structure of each layer such as the carrier rotation layer and the light emitting layer, the aforementioned washing step may be performed before and / or after the at least one of the steps in a timely manner. In the following, any element such as + of the present invention will be described in detail as long as it does not exceed the gist of the present invention, and the application of the present invention is not limited to the following embodiments. (Example 1) First, 'a glass substrate 1 which has been cleaned in advance and has transparency is prepared, and then an undercoating film made of silicon dioxide (SiO2) is formed on the glass substrate 1 by a CVD method. 2'The lower jaw Buchan | 0.4 microns. Next, an amorphous silicon (i-type 3_51) film 3 to be a semiconductor film without impurities is formed on the lower coating film 2 by a plasma CVD method, and the film thickness of the amorphous silicon film 3 is 50 nm. Then, a closed-electrode insulating film 4 made of a SiNx film is formed on the amorphous silicon film 3 by a plasma CVD method. The thickness of the inter-electrode insulating film 4 is 150 nm. Next, a gate electrode (not shown) made of an Al-Zr (97: 3) alloy and a closed-gate wiring metal for gate wiring are formed on the gate insulating film 4 by sputtering in a vacuum state. The film image 5 has a film thickness of about 200 nm. Next, the photosensitive material with a thickness of 1.5 micrometers is rotated by rotation. {Product size of this paper applies the Chinese National Standard (CNS) A4 specification < 210 X 297 mm)

In!--------I · ----—I — -jiT--- I-----"5^ (請先閲讀背面之;i意事項再填寫本頁) -33- 469529 A7 ___ B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(31) 名.TFR-890〔東京應化工業(股份)製〕或商品名:pFI37A 〔住友化學工業(股份)製]丨塗佈於玻璃基板1上,以 形成光阻骐(塗佈步驟)。之後,將該光阻膜進行預烤後, 再經由光罩進行曝光(曝光步驟),曝光條件為照射強度 100mJ/cm2。然後’以專用之顯像液對曝光後之光阻膜進 行顯像(顯像步驟)。藉此,可形成如第8圖所示之第1光阻 圖像6。接著,以該第i光阻圖像6作為罩蟇_^让),選擇性 的蝕刻前述閘極電極及閑極配線用之閘極配線金屬膜圖 像5。 然後,以第7囷所示之光阻去除裝置50進行形成於玻璃 基板1上之第1光阻囷像6的去除(光阻去除步驟)。其具體步 驟將具體說明於下。又,於本實施例中係使用超純水作為 洗淨物質。 首先’說明第7gL^L^L^_阻去除式具體構造。 本實施例之光阻去除裝置50係構造成具有:一反應槽51 ; 一供給構件52,係用以供給超純水53至該反應槽51者;一 分離槽56,係用以連接至該反應槽51者;一壓力控制構件 54,係用以控制反應槽51内部壓力者;及,一溫度控制構 件55,係用以控制反應槽51内_部氣直_^。 該反應槽51可收容5片以10mm間隔開之玻璃基板藉 此,可同時處理多片玻璃基板1,使生產力提高。又,反 應槽51具有可承受以壓力控制構件54加壓至220大氣壓力 以上之耐壓氣密構造。又,反應槽51係由可丞免以溫度控 制構件55加熱至375°C以上之耐熱材所構 (請先閱讀背面之注意事項再填寫本頁) 裝 Ή----- 線( 本紙張尺度適用中國國家標準(CNS)A4規格(2〗0 X 297公釐) •34- 經濟部智慧牀產局員工消費合作社印" A7 B7_ 五、發明說明(32) 該分離槽56係經由減壓閥57連接至反應槽51。又,分 離槽56備有:一回收真空管58,係用以排出污染物質者; 及一排出管59,係用以排出由超臨界狀態或亞臨界狀態變 成氣相狀態之水者。 以具有上述構造之光阻去除裝置50,如下所述地進行 第1光阻圖像6之去除。即,先將已形成第1光阻圊像6之5 片玻璃基板1置於反應槽51内部。 其次,將供給構件52供缔之超純水(電阻係數12百萬歐 姆以上)裝滿反應槽8内部,接著,以壓力控制構件54加壓 至250大氣壓力及以溫度控制構件55加熱至4〇〇乞,使超純 水處於超臨界狀態。維持此狀態分鐘以進行>去除光阻之 處理。藉此’乃可以超臨界水氧化分解而去晗笔丄Ua fg; 像6。 然後’將前述閘極電極及閘極配線用之閘極配線金屬 膜圊像5浸入由硼酸銨形成之電解液(pH值=乃中,進行陽極 氡化,以於閘極配線金屬膜囷像5之外露面(即上面及側面) 形成以Al2〇3為主成份之陽極氧化絶缘膜7。 又’以該陽極氧化絶緣膜7為革幕(Mask),進行触刻閘 極絶緣膜4’以形成閘極絶緣膜圓像4’(參考第9圖 於此,閘極絶緣膜4亦可以未去除之第1光阻圖像6為罩 幕(Mask)以進行蝕刻,但宜於形成陽極氧化絶緣膜7後,再 進行蝕刻閘極絶緣膜4 ’以防止於閘極電極及閘極配線用 之閘極配線金屬膜圊像5之陽極氧化絶緣膜7下面產生下 切部。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐〉 ---------I I--裝------II 訂- - -----線 (請先閱讀背面之注意事項再填窝本頁) •35- 4 95 29 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(33 ) 接者’以電衆CVD法沈積上膜厚約50nm之含填(η型不 純物)非晶質矽(n+ a-Si)膜8。又,以濺鍵法形成由Ti金屬形 成之接觸電極金屬膜9,該接觸電極金屬膜9之膜厚為 lOOnm。 接著,以連讀蒸鍍之方式形成膜厚約2〇〇nm之由Al-Zr 开> 成之金屬膜。接著,於該金屬膜上塗佈光阻材料後,經 由光罩進行曝光’以形成第2光阻圊像II。又,以該第2光 阻圖像11為罩幕(Mask)依次蝕刻Al-Zr膜、接觸電極金屬膜 9、n+ a-Si膜8及i型a-Si膜3。接著,與前述第1光阻圓像6 時相同’進行氧化’去除第2光阻圖堡丨〗。藉此,可將Α1·Ζγ 膜圖像化而呈現預定之形狀,以形成源極配線用金屬膜1〇a 及汲極配線用金屬臈l〇b。即,可形成由i型a_Si膜3、n+a-Si 膜8、接觸電極金屬膜9、源極配線用金屬膜1 〇a及汲極配線 用金屬膜10b構成之底閘型TFT12(參考第11圖)。 其次,再以濺鍍法於下塗_旅旗_2及TFT 12上蒸鍍形成由 姻錫氧化膜(ιτο)形成之透明電極膜13,其膜厚為i〇0nm。 接著,於透明電極膜13上塗佈光阻材料後,經由光革進行 #光,以形成第3光阻囷像14。接著,以該第3光阻圖像14 為罩幕(Mask)進行蝕刻》又,與前述第1光阻圖像6時相同’ 進行氧化分解,去除該第3光阻圖像14。藉此,形成透明 電極膜囷像群(畫素電極)13’(參考第12囷)。光阻之去除則 依照第1次去除光阻之方式為之。 接著,使用熱分解性之矽氮烷系矽石之印刷燒成法, 形成被覆於前述TFT12及透明電極各1之—二—氧化梦保護 I L----^ ^ i -----------I-- {請先閱讀背面之注意事項再填寫本頁) -36- •經濟部智慧Η產局員工消費合作社印製 A7 B7 五、發明說明(34) 膜15,其膜厚為300nm。 最後,以二氧化矽保護膜圖像為罩幕(Mask),蝕刻去 除與外部驅動電路連接之部份閘極電極金屬上之陽極氧 化膜。藉此’製作出可使用於透過型之液晶顯示裝置之TFT 陣列基板16(第13圖)。 如此,藉進行上述一連串之步驟,本實施例〗乃可以3 片光罩製作出TFT陣列基板。又,由於進行可同時放多片 玻璃基板於光阻去除裝置之反應槽内之光阻去除處理,故 可製造出量產性佳之TFT陣列基板。 又’於本實施例中係用玻璃基板進行微影成像步驟, 以說明去除光阻之各種情形,但使用矽基板時亦以相同方 式為之。又’本實施例之方法並不限定在去除光阻,亦可 應用於去除無機基板上之有機物污染。 又,本實施例中所說明者雖係以光罩進行曝光之步 驟’但即使是在不使用光罩而以電子束直接描繪任意圖像 形狀之直接描繪法中,亦可獲得相同結果。 (實施例2 ) 本實施例之液晶顯示元件係以下列所述方法製成。首 先’如第14阑所示,採用與前述實施例1相同方法製作出 TFT陣列基板19,其構造包含有:一玻璃基板1; 一第1電 極群17’係由形成矩陣狀之透明電極膜之圖像群所構成; 及一電晶體(TFT)群1 8,係用以分別驅動該透明電極膜圖像 群17。於此’ TFT群18為底閘型之構造。 另外’以過去公知之方法於玻璃基板上形成依R_G· 本紙張尺度適用中國國家標準(CNS)A4規格(210x 297公釐) -37- ---I--------•裝 ----I--訂---------線 (請先閱讀背面之注意事項再填寫本頁) 46952? A7 ------B7___ 五、發明說明(35 ) B順序所構成之濾色器群2〇及前述第2電極群,以製作相對 基板22 » 然後’再以過去公知之方法塗佈由聚醯亞胺樹脂所形 成之溶液於該TFT陣列基板19及相對基板22上,之後,進 行培燒以使其硬化,再進行研磨處理以形成液晶配向膜 23 ° 接著’在使第1電極群Π與第2電極群21相對之狀態 下,將該TFT陣列基板19與相對基板22定位並貼合》此時, 於TFT陣列基板19設置框狀之接着劑24及間隔物質25,使 胞元間隙約為5微米。又,將設置於TFT陣列基板1 9上之液 晶配向膜23之配向處理方向與設置於相對基板22上之液 晶配向膜23之配向處理方向相交,使呈9〇。之角度,而於交 叉尼科爾(呈暗視界)之狀態下進行定位。 然後,將液晶材料注入TFT陣列基板19及相對基板22 間’以形成具有90。扭角之TN配向液晶層26,製成液晶胞。 又,於光學軸方向呈交又尼科爾(呈暗視界)之狀態下,於 該液晶胞之外側分別設置偏光板27及27。藉以上步驟,完 成本實施例2之TN型液晶顯示元件。 經濟部智祛財產局員工消費合作社印製 接著,由TFT陣列基板19側對該液晶顯示元件照射背 光29 ’再以影像信號分別驅動TFT群18,以於箭頭A所示方 向顯示影像,俾確認是否處於良好的顯示狀態。如此,可 防止損及TFT元件特性,並可減少π染物質一義存。 又,形成TFT群18時,須形成至少將TFT覆蓋之保護 膜,以防止於形成液晶配向膜23時損及TFT,藉此,可製 -38 - ---------Γ ---j 裝---- (請先閱讀背S之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(2〗〇χ297公釐) •經濟部智慧酥產局員工消費合作社印製 A7 B7 五、發明說明(36) 造出可信賴性更高之液晶顯示元件。 又,前述保護膜可採用屬於無機物之二氧化矽膜或氤 化矽膜,以提升保護機能,而製成可信賴性更高之液晶顯 示元件。 又,形成具有光反射性之金屬電極膜,取代透明電極 膜以作為第1電極群17時,則可製成反射型液晶顯示元件β (實施例3) 第1 5囷(a)係本實施例之洗淨裝置之流體迴路圖《首 先,準備裝設有電極及配線之液晶陣列基板(陣列基板)及 濾色器基板(相對基板)’再以一般方法(純水洗淨法)進行洗 淨。然後,以印刷機塗佈聚合物(即配向膜之前驅物)後, 加以焙燒,以形成配向膜。於此,作為配向膜之前驅物的 聚合物係使用商安柏RN-7992〔商品名音譯;屬聚醯亞胺 系,為曰產化學工業(股份)所製〕。 接著,使用第15圖(a)所示之洗淨裝置40,以超臨界流 體洗淨法將形成配向臈等之液晶陣列基板及由濾色器基 板構成之基板群(以下亦簡稱基板群)32洗淨。其具體步锁 將說明於下。又,本實施例係使用C02作為洗淨物質。 首先’說明第15圖(a)所示之洗淨裝置4〇之具體構造。 本實施例之洗淨裝置40’其構造包含有:一洗淨槽31(内容 精為3升);_供給構件45 ’係經由注入管41連接至該洗淨 槽3 1者;及一分離槽3 7,係經由第1排出管42連接至該洗 淨槽3 1者。又,該洗淨槽3 1具有可收容被洗淨物之耐壓構 造。 本紙張足度適用中國國家標準(CNS)A4規格(210 X 297公釐) -------------- ------ - —訂---1 --- (請先閱讀背面之注意事項再填寫本頁) -39- 469529 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(37 ) 又,該供給構件45則包含有:一二氧化碳筒狀高壓氣 體容器33,係用以供給C〇2者;一高壓幫浦34係用以連 接至該二氧化碳筒狀高壓氣體容器33者;一熱交換器35, 係用以連接至該高壓幫浦34者;及一調整閥38,係用以連 接至該熱交換器35者。又,該高壓幫浦34具有將二氧化碳 筒狀高壓氣艘容器33所供給之c〇2加壓之機能。又,該熱 交換器35具有將經高壓幫浦34加壓之c〇2加溫之機能。 又,該調整閥38具有控制超臨界狀態c〇2i供給之機能。 進而,該分離搰37係經由減壓閥36連接至第i排出管42 者,其包含有:一回收真空管39,係用以排出污染物質者; 及一第2排出管43,係用以排出由超臨界狀態或亞臨界狀 態變為氣相狀態之C〇2者。又,於分離槽37内部設置有氣 魏分離膜〔商品名:Airdryer-UM-A5,宇部興產(股份) 製〕,該氣體分離膜對C02具有6xl0.5cc/cm2 .秒.cmHg 之氣體透過係數β 然後,以具有上述構造之洗淨裝置4〇,以如下所述方 式進行洗淨。即’首先將裝配於卡匣(工模或固持構件)44 中之已焙燒製成配向膜之基板群32設置於洗淨槽31内部。 其次,以高壓幫浦34將由二氧化碳筒狀高壓氣體容器 33供出之C〇2加壓至比C〇2臨界壓力更高之歷力 (35〇xl05Pa),同時昇溫至比C02臨界溫度更高之溫度(40 °C ),以到達超臨界狀態’然後,打開調整閥3 8之閥,將超 臨界流MC〇2供入洗淨槽31内,令其停留3分鐘。藉此,可 使污染物質析出至超臨界流體co2中,洗淨液晶陣列基板 私紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閲讀背面之注意事項再填寫本頁)In! -------- I · ----— I — -jiT --- I ----- " 5 ^ (Please read the back of the page; i-notes before filling out this page)- 33- 469529 A7 ___ B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of invention (31). TFR-890 [Tokyo Chemical Industry (Shares)] or trade name: pFI37A [Sumitomo Chemical Industry (Shares) Manufacturing] 丨 coated on the glass substrate 1 to form a photoresist (coating step). After that, the photoresist film is pre-baked, and then exposed through a photomask (exposure step), and the exposure condition is an irradiation intensity of 100 mJ / cm2. Then, the developed photoresist film is developed with a special developing solution (development step). Thereby, the first photoresist image 6 shown in Fig. 8 can be formed. Next, using the i-th photoresist image 6 as a cover (), the gate electrode and the gate wiring metal film image 5 for the idler wiring are selectively etched. Then, the first photoresist image 6 formed on the glass substrate 1 is removed by a photoresist removal device 50 shown in item 7 (photoresist removal step). The specific steps are described below. In this embodiment, ultrapure water is used as a cleaning substance. First, the specific structure of the 7th gL ^ L ^ L ^ _ resistance removal formula will be described. The photoresist removing device 50 of this embodiment is configured to have: a reaction tank 51; a supply member 52 for supplying ultrapure water 53 to the reaction tank 51; a separation tank 56 for connecting to the Those in the reaction tank 51; a pressure control member 54 for controlling the pressure inside the reaction tank 51; and a temperature control member 55 for controlling the inside of the reaction tank 51. The reaction tank 51 can accommodate 5 glass substrates spaced at a distance of 10 mm, whereby multiple glass substrates 1 can be processed at the same time, thereby improving productivity. In addition, the reaction tank 51 has a pressure-resistant airtight structure capable of withstanding a pressure of 220 atmosphere pressure or more by the pressure control member 54. The reaction tank 51 is made of a heat-resistant material that can be heated to a temperature of 375 ° C or higher with the temperature control member 55 (please read the precautions on the back before filling this page). Standards are applicable to China National Standard (CNS) A4 specifications (2〗 0 X 297 mm). • 34- Printed by the Consumer Cooperatives of the Smart Bed Industry Bureau of the Ministry of Economic Affairs " A7 B7_ V. Description of the invention (32) The separation tank 56 is The pressure valve 57 is connected to the reaction tank 51. In addition, the separation tank 56 is provided with: a recovery vacuum pipe 58 for discharging pollutants; and a discharge pipe 59 for discharging from a supercritical state or a subcritical state to gas. Those in the phase state. With the photoresist removal device 50 having the above-mentioned structure, the first photoresist image 6 is removed as described below. That is, five glass substrates on which the first photoresist image 6 has been formed are firstly removed. 1 is placed inside the reaction tank 51. Next, the inside of the reaction tank 8 is filled with ultrapure water (resistance coefficient 12 million ohms or more) supplied by the supply member 52, and then the pressure control member 54 is pressurized to 250 atmospheric pressure and The temperature control member 55 is used to heat up to 400, so that the ultrapure water is in a super-pro State. Maintain this state for minutes to carry out > photoresist removal treatment. By doing this, Ua fg can be removed by oxidative decomposition of supercritical water; like 6. Then, 'the foregoing gate electrode and gate wiring are used for The gate wiring metal film image 5 is immersed in an electrolytic solution formed of ammonium borate (pH = NOA), and anodized, so that the gate wiring metal film image 5 is exposed to the outside (ie, upper and side) to form Al2O3 is an anodized insulating film 7 as a main component. The 'anodized insulating film 7 is used as a mask, and the gate insulating film 4' is etched to form a gate insulating film circular image 4 '( Referring to FIG. 9 here, the gate insulating film 4 may also be the first photoresist image 6 that is not removed as a mask for etching, but it is suitable to form the anodized insulating film 7 before etching the gate. Insulation film 4 'to prevent undercuts under gate anodized insulating film 7 of gate wiring metal film image 5 for gate electrode and gate wiring. This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm> --------- I I--install -------- II order------- line (please read first Note on the back, please fill in this page) • 35- 4 95 29 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (33) The user's deposit is about 50nm by CVD method. A filled (n-type impurity) amorphous silicon (n + a-Si) film 8. A contact electrode metal film 9 made of Ti metal is formed by a sputtering method, and the thickness of the contact electrode metal film 9 is 100 nm. Next, a metal film made of Al-Zr on> with a film thickness of about 200 nm was formed by continuous vapor deposition. Next, a photoresist material is coated on the metal film, and then exposed through a photomask 'to form a second photoresist image II. In addition, an Al-Zr film, a contact electrode metal film 9, an n + a-Si film 8 and an i-type a-Si film 3 are sequentially etched using the second photoresist image 11 as a mask. Next, the second photoresist pattern is removed by 'oxidation' in the same manner as in the case of the first photoresist circular image 6. Thereby, the A1 · Zγ film can be imaged into a predetermined shape to form a metal film 10a for source wiring and a metal film 10b for drain wiring. That is, a bottom-gate TFT 12 (refer to FIG. 1) composed of an i-type a_Si film 3, an n + a-Si film 8, a contact electrode metal film 9, a source wiring metal film 10a, and a drain wiring metal film 10b can be formed (see (Figure 11). Next, a transparent electrode film 13 made of an indium tin oxide film (ιτο) is formed by evaporation on the undercoat _ flag_ 2 and the TFT 12 by a sputtering method, and the film thickness is 100 nm. Next, the transparent electrode film 13 is coated with a photoresist material, and then subjected to #light via a photo leather to form a third photoresist image 14. Next, the third photoresist image 14 is etched as a mask. The same photoresist image as in the first photoresist image 6 described above is oxidized and decomposed to remove the third photoresist image 14. Thereby, a transparent electrode film image group (pixel electrode) 13 'is formed (refer to Section 12). The removal of the photoresist is the same as the method of removing the photoresist for the first time. Next, a thermally decomposable silazane-based silica is used for the printing and firing method, so as to cover the TFT12 and the transparent electrode 1-2-oxide dream protection I L ---- ^ ^ i ----- ------ I-- {Please read the precautions on the back before filling this page) -36- • Printed by A7 B7, Employee Cooperative of the Intellectual Property Industry Bureau of the Ministry of Economic Affairs V. Invention Description (34) Film 15, The film thickness was 300 nm. Finally, using the silicon dioxide protective film image as a mask, the anode oxide film on the gate electrode metal connected to the external driving circuit is removed by etching. In this way, a TFT array substrate 16 (FIG. 13) which can be used in a transmissive liquid crystal display device is produced. In this way, by performing the above-mentioned series of steps, in this embodiment, a TFT array substrate can be fabricated with three photomasks. In addition, since a photoresist removal process capable of simultaneously placing a plurality of glass substrates in a reaction tank of a photoresist removal device is performed, a TFT array substrate with good mass productivity can be manufactured. In addition, in this embodiment, a lithography imaging step is performed using a glass substrate to explain various cases of removing photoresist, but the same method is used when a silicon substrate is used. Also, the method of this embodiment is not limited to the removal of photoresist, and can also be applied to remove organic contamination on an inorganic substrate. In addition, although the description in this embodiment is a step of exposing with a photomask ', the same result can be obtained even in the direct drawing method of directly drawing an arbitrary image shape with an electron beam without using a photomask. (Embodiment 2) The liquid crystal display element of this embodiment is manufactured by the following method. First, as shown in the fourteenth section, a TFT array substrate 19 is fabricated by the same method as in the previous embodiment 1. Its structure includes: a glass substrate 1; a first electrode group 17 'is formed by forming a matrix-shaped transparent electrode film. And a transistor group 18 for driving the transparent electrode film image group 17 respectively. Here, the 'TFT group 18 has a bottom-gate structure. In addition, 'formed on the glass substrate by conventional methods in accordance with R_G. This paper size applies the Chinese National Standard (CNS) A4 specification (210x 297 mm) -37- --- I -------- • equipment ---- I--Order --------- line (please read the precautions on the back before filling this page) 46952? A7 ------ B7___ 5. Description of the invention (35) B order The formed color filter group 20 and the aforementioned second electrode group are used to fabricate a counter substrate 22 »Then, a solution made of a polyimide resin is applied to the TFT array substrate 19 and a counter electrode by a conventionally known method. After that, the substrate 22 is fired to harden it, and then polished to form a liquid crystal alignment film 23 °. Then, the TFT array substrate is faced with the first electrode group Π and the second electrode group 21 facing each other. 19 is positioned and bonded to the opposite substrate 22 "At this time, a frame-shaped adhesive 24 and a spacer 25 are provided on the TFT array substrate 19 so that the cell gap is approximately 5 microns. Further, the alignment processing direction of the liquid crystal alignment film 23 provided on the TFT array substrate 19 and the alignment processing direction of the liquid crystal alignment film 23 provided on the opposite substrate 22 were intersected to be 90. Angle, and positioned in the state of the crossed Nicols (dark vision). Then, a liquid crystal material is injected between the TFT array substrate 19 and the counter substrate 22 'so as to have a thickness of 90'. The twisted TN aligns the liquid crystal layer 26 to form a liquid crystal cell. Further, in a state where the optical axis direction intersects with Nicols (has a dark field of view), polarizing plates 27 and 27 are respectively provided on the outer sides of the liquid crystal cells. By the above steps, the TN-type liquid crystal display element of Example 2 is completed. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Next, the liquid crystal display element is illuminated with backlight 29 'from the TFT array substrate 19 side, and then the TFT group 18 is driven by the image signal to display the image in the direction indicated by arrow A. Whether it is in a good display state. In this way, the characteristics of the TFT element can be prevented from being impaired, and the π-dye substance can be reduced. In addition, when forming the TFT group 18, it is necessary to form a protective film covering at least the TFT to prevent the TFT from being damaged when the liquid crystal alignment film 23 is formed. Thereby, -38---------- Γ- --j Pack ---- (Please read the precautions on the back of S before filling out this page) This paper size is applicable to China National Standard (CNS) A4 (2) 0 × 297 mm • Employees of the Ministry of Economic Affairs Printed by Consumer Cooperatives A7 B7 V. Description of Invention (36) Create a more reliable liquid crystal display element. In addition, the protective film may be a silicon dioxide film or a silicon oxide film, which is an inorganic substance, in order to improve the protection function and make a liquid crystal display device with higher reliability. In addition, when a metal electrode film having light reflectivity is formed instead of the transparent electrode film as the first electrode group 17, a reflective liquid crystal display element β can be produced (Example 3) The first 15th (a) is the present embodiment Example fluid circuit diagram of a cleaning device "First, prepare a liquid crystal array substrate (array substrate) and a color filter substrate (counter substrate) equipped with electrodes and wiring," and then wash it by a general method (purified water cleaning method) net. Then, the polymer (that is, the precursor of the alignment film) is coated with a printer and then fired to form an alignment film. Here, the polymer used as the precursor of the alignment film was Shang Anbo RN-7992 [transliteration of the trade name; it is a polyimide system and was manufactured by Yusan Chemical Industry Co., Ltd.]. Next, using the cleaning device 40 shown in FIG. 15 (a), a liquid crystal array substrate formed with alignment 臈 and the like and a substrate group composed of color filter substrates (hereinafter also referred to as a substrate group) are washed by a supercritical fluid cleaning method. 32 Wash. The specific step lock will be described below. In this embodiment, C02 is used as a cleaning substance. First, the specific structure of the cleaning device 40 shown in Fig. 15 (a) will be described. The structure of the cleaning device 40 ′ of this embodiment includes: a cleaning tank 31 (the content is 3 liters); a supply member 45 ′ is connected to the cleaning tank 31 via an injection pipe 41; and a separation The tank 37 is connected to the washing tank 31 via the first discharge pipe 42. The washing tank 31 has a pressure-resistant structure capable of accommodating objects to be washed. This paper is fully compliant with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -------------- --------Order --- 1 --- (Please read the precautions on the back before filling out this page) -39- 469529 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the Invention (37) In addition, the supply member 45 contains: a carbon dioxide cylinder high pressure A gas container 33 is used to supply CO2; a high-pressure pump 34 is used to connect to the carbon dioxide cylindrical high-pressure gas container 33; a heat exchanger 35 is used to connect to the high-pressure pump 34 And an adjusting valve 38 for connecting to the heat exchanger 35. The high-pressure pump 34 has a function of pressurizing the carbon dioxide supplied from the carbon dioxide cylindrical high-pressure gas vessel 33. In addition, the heat exchanger 35 has a function of warming the CO 2 pressurized by the high-pressure pump 34. The regulating valve 38 has a function of controlling the supply of the supercritical state co2i. Further, the separation tube 37 is connected to the i-th discharge pipe 42 through a pressure reducing valve 36, and includes: a recovery vacuum pipe 39 for discharging pollutants; and a second discharge pipe 43 for discharging Co2 who changed from supercritical state or subcritical state to gas phase state. A gas separation membrane [trade name: Airdryer-UM-A5, manufactured by Ube Industries, Ltd.] is provided inside the separation tank 37. The gas separation membrane has a gas of 6xl0.5cc / cm2.sec.cmHg for C02. Transmission coefficient β Then, the washing device 40 having the above-mentioned structure was washed in the following manner. That is, firstly, the substrate group 32 which has been baked and made into an alignment film and assembled in a cassette (tool or holding member) 44 is set inside the cleaning tank 31. Second, the high-pressure pump 34 pressurizes the CO 2 supplied from the carbon dioxide cylindrical high-pressure gas container 33 to a calendar power (35 × 10 5 Pa) higher than the critical pressure of CO 2, and at the same time raises the temperature to a temperature higher than the critical temperature of CO 2 The temperature (40 ° C) to reach the supercritical state. Then, the valve of the regulating valve 38 is opened, and the supercritical flow MC0 2 is supplied into the cleaning tank 31 and allowed to stay for 3 minutes. In this way, pollutants can be precipitated into the supercritical fluid co2, and the size of the private paper used to clean the LCD array substrate is in accordance with China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling in this page)

b----^裝--------訂·---·!— 一--線 I -40- A7 A7b ---- ^ 装 -------- Order · --- ·! — First--line I -40- A7 A7

五、發明說明(38 ) 及渡色器基板表面。 然後,將混入了污染物質之超臨界流體c〇2由第ι排出 管42排出至洗淨槽31外,以減壓閥進行減壓後,送出至分 離槽37«於分離槽37中,因超臨界流體c〇2處於溫度9χ:及 壓力9x1〇5Pa之條件下,故產生相變化而變成氣體狀態藉 此,可析出溶解之污染物質,並可進行c〇2與污染物質之 分離。又,析出於分離槽3 7内之污染物質,則藉打開回收 真空管39之間’而將其排出至分離槽37外。 接著,對洗淨後之液晶陣列基板及濾色器基板中之配 向膜,進一步施予研磨處理。然後,將液晶陣列基板與濾 色器基板相貼合,並使胞元間隙約為12 μιη,以製作空胞 元。再將液晶〔商品名:ZLI-4792,美爾克(Merk )社製〕 由液晶注入口注入至該空胞元内部,以製作本發明之液晶 胞元A。 然後’開始對以上述步驟製成之本發明之液晶胞元A 中之液晶配向性進行評估。即,於交又尼科爾(呈暗視界) 之狀態下,將成對之偏光板設置於本發明之液晶胞A之外 侧面’並以肉眼觀察之。結果並沒有觀察到液晶配向呈不 連續之領域,且傾轉(斜向錯位;disclination)現象極少。 又,顯示黑色之,且於液晶注入口;付近亦幾 乎看不見配向流動之現象。即,可硪定已獲得配向性非常 良好之液晶胞。如此,可清楚了解以超臨界狀態之二氧化 碳對焙燒後之配向膜進行洗淨,可有效的提升顯示品質。 又,該洗淨槽3 1亦可具有一加溫構件,以將其内部控 本紙張尺度適用中®國家標準(CNS)A4規格(210 x 297公釐) ---------- I--裝·-----1_ 訂·--II--線 <請先閱讀背面之注意事項再填寫本頁) •經濟部智慧財產局員工消費合作杜印製 -41- 469529 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(39) 制於預定溫度。又,如第15圖(b)所示,該供給構件45亦可 具有一貯留槽(貯留組件)46,以取代該高壓幫浦34及熱交 換器35,而將超臨界流體貯留於二氡化碳筒狀高懕氣體容 器33及調整閥38之間者。又,該貯留槽46並具有耐壓構, 造,且,具有一加壓加溫構件(圖中未示),係用以將洗淨 物質加壓至比洗淨物質之臨界壓力更高之壓力,同時加溫 至比洗淨物質之臨界溫度更高之溫度,以使其處於超臨界 狀態者。藉上述構造’則可依需要而適時將超臨界流體供 給至洗淨槽31内。又’作為前述固持構件之卡匣(工模) 44 ’亦可用以固持空胞元或液晶胞,藉此,本實施例之洗 淨裝置乃可構成一種可洗淨空胞元或液晶胞之構造。 广比較例1 , 本比較例1中係進行以水為基板之洗淨處理方法之洗 淨處理,藉進行與前述實施例3相同之步驟,以製成比較用 之液晶胞元a。具體而言’首先’將基板設置於實施例3中 所使用之洗淨槽3 1内’然後’將約5 0 °C之溫水(即洗淨劑) 注入’進行10分鐘之洗淨。之後,將基板移至乾燥器,以 7〇t進行充份的乾燥》 藉進行包含以上洗淨處理之一連串製造過程,以製成 比較用之液晶胞元a。接著,對該比較用之液晶胞元a進行 與前述實施例3相同之配向評估。結果,發現傾轉(斜向錯 位;disclination)現象嚴重,且顯示黑色之部份也較淡,因 此’可確定有配向流動之現象發生。即,與前述今發明之 液晶胞元A相較下,配向性有明顯的劣化,鼦元兄質也^ -----^----„----^ ^------I — — ------ (請先閱讀背面之注意事項再填寫本頁) -42- A7 A7 經濟斧智慧咏產局員工消費合作社印製 五、發明說明(4〇) 不好。此乃於以水進行洗淨處理後之乾燥處理中,水並沒 有完全的去除以致於殘留,而使配向膜之液晶分子之配向 能受到不良影響所致。 (比麵 本比較例2中係使用酒精作為洗淨劑以取代水,藉進行 與前述比較例1相同之步驟,以製成比較用之液晶胞元b » 又,對該比較用之液晶胞元b進行與前述實施例3相同之配 向評估。結果,雖然傾轉(斜向錯位;disclination)現象較 比較例1之比較用之液晶胞元a輕微,但卻比本發明之液晶 胞元A嚴重’且顯示黑色部份也較淡,可確定也有配向流 動之現象發生。即’與前述本發明之液晶胞元A相較下, 配向性有明顯的劣化’且顯示品質也不好。至於為何比較 用之液晶胞元b之傾轉(斜向錯位;disclinati〇n)現象較比較 用之液晶胞元a輕微,乃由於酒精的沸點比水低,因此,洗 淨處理後之乾燥處理可去除比去除水時更多的溶液。另 外,與本發明之液晶胞元A相較下’其配向性劣化且顯 示性能下降,乃由於酒稜留所 致。 C雾板财) 本實施例4之液晶始开,,陰t 媸於研磨處 理前進行洗淨而於研磨處理後進行洗淨外,係以與前述實 施例3相同之方法製成。又’以上述方法製成之本實施心 之液晶胞元,以下稱為本發明之液晶胞元3。又,對該本 發明之液晶胞元B進行與前述實施例3相同 < 配向性評 -----------I----------訂·-----I !·^· {請先閱讀背面之注意事項再填寫本頁) -43- A7 469529 B7_ 五、發明說明(41) (靖先閱讀背面之注意事項再填寫本頁> 估β結果,發現傾轉(斜向錯位;disclination)現象極少, 且顯示黑色之部份也深,進而於液晶注入口附近亦幾乎看 不見配向流動之現象。即,獲得了配向性非常良好之液晶 胞元。由此可知,於研磨處理後,以超臨界狀態之二氧化 碳進行洗淨,可有效的提升顯示品質。 (比較例3 ) 本比較例3中係進行以水為基板之洗淨處理方法之洗 淨處理,藉進行與前述實施例4相同之步驟,以製成比較用 之液晶胞元c»具體而言,首先,將基板設置於實施例4中 所使用之洗淨槽3 1内,然後,將約50°C之溫水(即洗淨劑) 注入,進行10分鐘洗淨。之後,將基板移至乾燥器,以70 °C進行充份的乾燥》 藉進行包含以上洗淨處理之一連串製造過程,以製成 比較用之液晶胞元c。又,對該比較用之液晶胞元c進行與 前述實施例4相同之配向評估。結果,發現傾轉(斜向錯位; disclination)現象嚴重,且顯示黑色部份也較淡,可確定有 配向流動之現象發生。即,與前述本發明之液晶胞元B相 較下,配向性有明顯的劣化,且顯示品質也不好。 經濟部智慧財產局員工消費合作社印#|农 (比較例4 1 本比較例4中係使用酒精以取代約5〇°C之溫水,藉進行 與前述比較例3相同之步驟,以製成比較用之液晶胞元d。 又,對該比較用之液晶胞元d進行與前述實施例4相同之配 向評估。結果,雖然傾轉(斜向錯位;disclination)現象較 比較例3之比較甩逸元德^―‘ ^里卻....比-本之^^晶胞 本紙張又度適用中國國家標準(CNS)A4規格(210 X 297公釐) -44· 經濟部智慧林產局員工消費合作社印製 A7 _____B7________ 五、發明說明(42) 元B嚴重,且顯示黑色部份也較淡’可择定亦有配向流動 之現象發生。即,與前述本發明之液晶胞元D相較下’配 向性有明顯的劣化,且顯示品質也不好。 (實施例5 ) 本實施例5係製作EL胞元,不同於前述各實施例及比 較例製作之液晶胞元。以下將具體說明之。 首先,準備一形成有由ΙΤΟ形成之透明電極(陽極)之透 明基板,然後,使用前述洗淨裝置40以超臨界流體洗淨法 將該透明基板洗淨》 接著,於洗淨後之透明基板之ΙΤΟ上形成載子輸送 層。即,於氮氣氣氛下,將聚乙烯咔唑及氣仿溶液 (300〇^/101111)旋轉塗佈(5000印11^10秒)於透明基板上後, 進行80°C之熱處理’以使氣仿揮發。接著,再於氮氣氣氛 下以120°C進行30分鐘之烘烤。藉此,可形成厚度 且完全硬化之電洞輸送層。 然後’於該載子輸送層上形成發光層。即,將 經基嗜琳氧螯合物錯體及氣仿(4〇〇mg/l〇ml)旋轉塗佈 (5000rpmxl0秒)於載子輸送層上後,進行8〇〇c之熱處理, 以使氣仿揮發。接著’於氮氣氣氛下以12〇 進行3〇分鐘之 烘烤。藉此’可形成完全硬化之發光層。然後,以真空蒸 鍍法將A1蒸鍍於該發光層上,俾於背面電極(陰極)上成 膜,以製成本發明之EL胞元。 又’對以上述步驟製成之EL胞元進行發光之評估。 即,於透明電極及背面電極間施以直流脈衝電壓(Μ 結 -- n I ί ί I I I I - I · t I I I I I I <請先閲讀背面之注帝?事項再填寫本頁>5. Description of the invention (38) and the surface of the ferrule substrate. Then, the supercritical fluid co2 mixed with the pollutants is discharged from the cleaning pipe 31 through the exhaust pipe 42, and the pressure is reduced by a pressure reducing valve, and then sent to the separation tank 37. In the separation tank 37, The supercritical fluid co2 is at a temperature of 9x: and a pressure of 9x105Pa, so a phase change occurs to become a gaseous state. As a result, dissolved pollutants can be precipitated, and co2 can be separated from the pollutants. In addition, if the contaminants in the separation tank 37 are separated, they are discharged out of the separation tank 37 by opening the space between the recovery vacuum tubes 39 '. Next, the alignment films in the cleaned liquid crystal array substrate and color filter substrate are further subjected to a polishing treatment. Then, the liquid crystal array substrate and the color filter substrate are bonded together, and the cell gap is made about 12 μm to make an empty cell. Then, a liquid crystal [trade name: ZLI-4792, manufactured by Merk] is injected into the empty cell through a liquid crystal injection port to produce the liquid crystal cell A of the present invention. Then, the evaluation of the liquid crystal alignment in the liquid crystal cell A of the present invention prepared by the above steps was started. That is, in a state of Nicol (presenting a dark field of vision), the paired polarizing plates are set on the outer side of the liquid crystal cell A of the present invention 'and observed with the naked eye. As a result, no discontinuous field was observed in the alignment of the liquid crystal, and tilting (disclination) was extremely rare. In addition, it shows black, and it is at the liquid crystal injection port; it is almost impossible to see the phenomenon of alignment flow. That is, it can be determined that a liquid crystal cell having very good alignment is obtained. In this way, it can be clearly understood that the alignment film after firing is cleaned with carbon dioxide in a supercritical state, and the display quality can be effectively improved. In addition, the cleaning tank 31 can also have a heating element to apply its internal control paper size to the National Standard (CNS) A4 specification (210 x 297 mm) --------- -I--Equipment --------- 1_ Order · --II--Line < Please read the notes on the back before filling in this page) • Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Consumption Du-41- 469529 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (39) Controlled at a predetermined temperature. Further, as shown in FIG. 15 (b), the supply member 45 may have a storage tank (storage module) 46 instead of the high-pressure pump 34 and the heat exchanger 35, and the supercritical fluid may be stored in the second pump. The one between the carbonized cylindrical high radon gas container 33 and the adjustment valve 38. In addition, the storage tank 46 has a pressure-resistant structure, and is provided with a pressure heating member (not shown) for pressurizing the cleaning substance to a pressure higher than the critical pressure of the cleaning substance. Pressure, and at the same time, warm to a temperature higher than the critical temperature of the cleaning substance, so that it is in a supercritical state. With the above structure ', a supercritical fluid can be supplied into the washing tank 31 at a proper time as needed. Also, 'the cassette (tool) 44 as the aforementioned holding member can also be used to hold an empty cell or a liquid crystal cell, whereby the cleaning device of this embodiment can constitute a type of cell that can clean an empty cell or a liquid crystal cell. structure. Comparative Example 1 In this Comparative Example 1, a cleaning process using a water-based substrate cleaning process was performed. By performing the same steps as in Example 3 above, a comparative liquid crystal cell a was prepared. Specifically, 'first' the substrate is set in the cleaning tank 3 1 used in Example 3 ', and then' warm water (ie, detergent) at about 50 ° C is poured 'for 10 minutes for cleaning. After that, the substrate was moved to a desiccator and fully dried at 70 t. A liquid crystal cell a for comparison was produced by performing a series of manufacturing processes including the above washing process. Next, the liquid crystal cell a for comparison was subjected to the same alignment evaluation as in Example 3 described above. As a result, it was found that the phenomenon of tilting (disclination) was serious, and the black part was also lighter. Therefore, it can be confirmed that the phenomenon of alignment flow occurs. That is, compared with the aforementioned liquid crystal cell A of the present invention, the alignment is significantly deteriorated, and the elemental quality of the element is also ^ ----- ^ ---- „---- ^ ^ ----- -I — — ------ (Please read the precautions on the back before filling out this page) -42- A7 A7 Printed by the Employees ’Cooperatives of the Intellectual Property and Smart Industry Bureau V. Invention Description (4〇) Not good. This is because in the drying treatment after washing treatment with water, the water is not completely removed so as to remain, and the alignment of the liquid crystal molecules of the alignment film can be adversely affected. (Compared to the system in Comparative Example 2) Alcohol was used as a cleaning agent instead of water, and the same steps as in Comparative Example 1 were performed to prepare a liquid crystal cell b for comparison. The liquid crystal cell b for comparison was performed in the same manner as in Example 3. Result of alignment evaluation. As a result, although the phenomenon of tilting (disclination) is slighter than that of the liquid crystal cell a used in the comparative example 1, it is more serious than the liquid crystal cell A of the present invention, and the black part is also more visible. It can be confirmed that the phenomenon of alignment flow also occurs. That is, compared with the aforementioned liquid crystal cell A of the present invention, the alignment There is obvious degradation 'and the display quality is also not good. As for why the tilting (displacement obliquely; disclination) phenomenon of the comparative liquid crystal cell b is slighter than the comparative liquid crystal cell a, it is because the boiling point ratio of alcohol The water is low, so the drying process after the washing process can remove more solutions than when the water is removed. In addition, compared with the liquid crystal cell A of the present invention, its alignment is deteriorated and its display performance is lowered because of the wine edge C fog board) The liquid crystal of this embodiment 4 is turned on. The negative electrode 阴 is cleaned before the grinding treatment and washed after the grinding treatment, and is manufactured in the same manner as in the previous embodiment 3. In addition, the liquid crystal cell of the present embodiment manufactured by the above method is hereinafter referred to as the liquid crystal cell 3 of the present invention. The liquid crystal cell B of the present invention is subjected to the same as the foregoing embodiment 3 < Sexual Evaluation ----------- I ---------- Order · ----- I! · ^ · (Please read the precautions on the back before filling this page)- 43- A7 469529 B7_ V. Description of the invention (41) (Jing first read the precautions on the back and then fill out this page> Estimating β results, and found the tilt ( There are very few disclination phenomena, and the black part is also deep, and the phenomenon of alignment flow is almost not seen near the liquid crystal injection port. That is, a liquid crystal cell with very good alignment is obtained. It can be seen that After polishing, washing with supercritical carbon dioxide can effectively improve the display quality. (Comparative Example 3) In this Comparative Example 3, a cleaning process using a water-based substrate cleaning process is performed. The same steps as in the foregoing Example 4 were performed to make a comparative liquid crystal cell c ». Specifically, first, the substrate was set in the cleaning tank 31 used in Example 4, and then, about 50 ° C Inject warm water (ie detergent) and wash for 10 minutes. After that, the substrate was moved to a desiccator and fully dried at 70 ° C. A liquid crystal cell c for comparison was produced by performing a series of manufacturing processes including the above washing process. In addition, the liquid crystal cell c for comparison was subjected to the same alignment evaluation as in the foregoing Example 4. As a result, it was found that the phenomenon of tilting (dislocation) was serious, and the black part was also lighter, which confirmed that the phenomenon of alignment flow occurred. That is, compared with the aforementioned liquid crystal cell B of the present invention, the alignment is significantly deteriorated, and the display quality is not good. Employee Consumption Cooperative Society of the Intellectual Property Bureau of the Ministry of Economic Affairs ## 农 (Comparative Example 4 1 In this Comparative Example 4, alcohol was used instead of warm water at about 50 ° C, and the same steps as in Comparative Example 3 were used to make Comparative liquid crystal cell d. The same alignment evaluation was performed on the comparative liquid crystal cell d as in the previous Example 4. As a result, although the phenomenon of tilting (disclination) was more severe than that of Comparative Example 3 Yiyuan De ^ ― '^ Li yet .... Bee-Ben's ^^ This cell paper is again applicable to China National Standard (CNS) A4 (210 X 297 mm) -44 · Employees of the Ministry of Economic Affairs and Forestry Bureau Printed by the consumer cooperative A7 _____B7________ 5. Description of the invention (42) Yuan B is serious, and the black part is also lighter. 'Alternatively, there is also a phenomenon of orientation flow. That is, compared with the aforementioned liquid crystal cell D of the present invention. The alignment is significantly degraded, and the display quality is not good. (Example 5) This example 5 is to make EL cells, which is different from the liquid crystal cells made in the previous examples and comparative examples. The details will be described below. First, prepare one formed with ITO The transparent substrate of the bright electrode (anode), and then the transparent substrate is cleaned by the supercritical fluid washing method using the aforementioned cleaning device 40. Next, a carrier transport layer is formed on the cleaned transparent substrate ITO. In a nitrogen atmosphere, polyvinyl carbazole and a gas-imitation solution (300 00/101111) were spin-coated (5000 imprints 11 ^ 10 seconds) on a transparent substrate, and then heat-treated at 80 ° C to make the gas imitation It volatilizes. Then, it is baked at 120 ° C for 30 minutes in a nitrogen atmosphere. Thereby, a hole transporting layer having a thickness and complete hardening can be formed. Then, a light-emitting layer is formed on the carrier transporting layer. That is, After being spin-coated (5000 rpm x 10 seconds) on the carrier transport layer, the lyophilized oxygen chelate complex and aeroform (400 mg / 10 ml) were subjected to heat treatment at 800 c to make the gas Imitation volatilization. Then 'bake at 120 for 30 minutes in a nitrogen atmosphere. By this, a fully hardened light-emitting layer can be formed. Then, A1 is vapor-deposited on the light-emitting layer by vacuum evaporation, and A film is formed on the back electrode (cathode) to make the EL cell of the present invention. The EL cells made in the above steps were evaluated for luminescence. That is, a DC pulse voltage (M junction-n I ί ΙIII-I · t IIIIII) was applied between the transparent electrode and the back electrode < read the note on the back first Emperor? Fill in this page again >

經濟部智慧財產局員工消費合作社印製 4 6 9 5 2 9 A7 五、發明說明(43) 果獲得亮麗之綠光’且幾乎看不見黑點《由此可知,以超 臨界狀態之二氡化碳進行洗淨,可有效的提升顯示品質。 (比較例5 ) 本比較例5係進行以酒精為形成有ITO之透明基板之 洗淨處理方法之洗淨處理,藉進行與前述實施例5相同之處 理,以製成比較用EL胞元ώ又,對該比較用EL胞元進行與 前述實施例5相同之發光評估。結果,不但亮度比實施例5 之EL胞元弱’且觀察到黑點。即,與前述本發明之胞元 相較,發光性明顯偏低》 以上詳細說明中所述之本發明具體實施態樣,目的只 在將本發明之技術内容加以明確化,不能以此具體例對本 發明作狹義的解釋,即,只要是合於本發明之精神及以下 所述申請專利範圍之範圍内,均可作種種必要之變更。 產業上之可利_^_性 本發明之基板上之有機物的去除方法,如以上述說明 之形態加以實施,則可達成以下所述之效果。 即’依本發明之基板上之有機物的去除方法,由於不 使用安全性低且危險之有機溶劊,而使用超臨界%或亞臨 界水’因此’可確保作業上之安全性,且,於去除有機物 後並可進行簡便的廢液處理。又,如使用於韶臨界狀n 亞臨界狀態之超純水作為超臨界水或亞臨界水時,因幾乎 不含不純物,故於去除有機物後’不會有不純物殘留a 又’依本發明之半導馥裝置及顯示裝置之製造方法, 由於可以超臨界水等將半導_邀..基無-所令:.言-之光阻完全的 本紙張尺度適用中國國家標準(CNS)A4規格(2〗〇χ 297公釐) <請先閲讀背面之注意事項再填寫本頁) --f n —1 ϋ I ϋ 線( -46- 經濟钋智慧叶產局員工消費合作社印製 A7 ---1---------- --- 五、發明說明(44) 氧化分解並去除,故不會殘留任何光阻。因此可防止發 生因光阻之m引起元件特性之不安定化。χ,過去使 用的光阻剝離液安全性低且危險,但如使用超臨界水等則 可確保作業上之安全性。又,由於使用後之廢液對人雜也 不含有害物質,而可進行簡便的廢液處理,且,由於含於 超臨界水等内之不純物極少,故於去除光阻後,不會有不/ 純物殘留於基板上而形成污染的問題。 又,依本發明之基板上之有機物的去除裝置,由於可 以超臨界水或亞臨界水將存在於基板上之有機物更有效率 的氧化去除,故可提升生產效 又,本曼明之顯示奘置之,係用以製造包含 有洗淨基板之洗淨步驟之顯示裝置者,而該洗淨步驟1以 超臨界流想或亞臨界流體進行洗淨,因此,可省略過夫之. 液艘系洗淨法中所必須之乾燥步驟等。結果不但可減少製 ie步驟數而減低製造成本,同時可提升其生產慎f又,因 無洗淨物質殘留,故可防止使基板表面免^響,而 發揮可製造裊好顯示特。 又’本發明之顯示裝置之製造裝置,由於洗淨基板時 無洗淨物質殘留於基板上,故不需要洗淨後之洗刷m 乾燥處理等,而可達到減低製造成本之目的。又,因不殘 留洗淨物質’故可發並_製_^易邊_^顯示特性之颞示裝置的 效果。 根據以上說明,依本發明之構造可完全的達成本發明 之各巧課題。因此,本發明於產業上乃具有重大意義。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 47- --I ----------裝 -------—訂!-----線 (請先閲讀背面之注意事項再填寫本頁) 469529 B7 五、發明說明(45 經濟部智慧財產局員工消費合作社印制^ 符號說明 1...玻璃基板 19…TFT陣列基板 2...下塗佈膜 2〇…濾色器群 3…非晶質矽膜(i型a-Si) 21…第2電極群 4...閘極絶緣膜 22…相對基板 4’.·,閘極絶緣膜圖像 2 3…液晶配向膜 5…閘極配線金屬膜圖像 2 4…接着劑 6··.第1光阻圖像 25…間隔物質 7...陽極氧化絶緣膜 26…TN配向液晶層 8…含磷非晶質矽膜(n + 27...偏光板 a-Si) 29…背光 9...接觸電極金屬膜 31...洗淨槽 10 a…源極配線用金屬膜 3 2…基板群 10b…汲極配線用金屬骐 33----氧化碳筒狀 11…第2光阻圖像 體容器 12...底閘型TFT 34…高壓幫浦 13...透明電極膜 35…熱交換器 13’··.透明電極膜圖像群 37...分離槽 14…第3光阻圖像 38·.,調整閥 15…二氧化矽保護膜 3 9…回收真空管 16…TFT陣列基板 40...洗淨裝置 17…第1電極群(透明電極膜 41...注入管 圖像群) 42…第1排出管 18..·電晶體(TFT)群 43…第2排出管 本紙張反度適用中國國家標準<CNS)A4規格(210x297公爱) I l·---^ 裝--------訂··--1.111 !線( (請先閱讀背面之注意事項再填窵本頁) ,48· A7 B7 五、發明說明(46) 44…卡匣 54...壓力控制構件 45…供給構件 55...溫度控制構件 46.. .貯留槽 56.,.分離槽 50.. .光阻去除裝置 57…減壓間 51.. .反應槽 58...回收真空管 52…供給構件 59...排出管 5 3...超純水 (請先閱讀背面之注意事項再填寫本頁) *經濟邨智慧財產局員一Η消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 9 5 2 9 A7 V. Description of the invention (43) If you get a beautiful green light, and almost no black spots are visible Carbon washing can effectively improve the display quality. (Comparative Example 5) This Comparative Example 5 was subjected to a cleaning treatment using alcohol as a transparent substrate formed with ITO, and the same treatment as in Example 5 was performed to prepare a comparative EL cell. The comparison EL cell was subjected to the same light emission evaluation as in Example 5. As a result, not only the brightness was weaker than that of the EL cell of Example 5 but also black spots were observed. That is, compared with the aforementioned cell of the present invention, the luminescence is significantly lower. The specific embodiment of the present invention described in the detailed description above is only for the purpose of clarifying the technical content of the present invention, and cannot be based on this specific example. The present invention is explained narrowly, that is, as long as it is within the spirit of the present invention and the scope of patent application described below, various necessary changes can be made. Industrial advantage _ ^ _ The method for removing organic matter on the substrate of the present invention, if implemented in the form described above, can achieve the following effects. That is, 'the method for removing organic matter on a substrate according to the present invention does not use a low-safe and dangerous organic solvent, but uses supercritical% or subcritical water', so that it can ensure safety in operation, and, After removing organics, simple waste liquid treatment can be performed. In addition, if ultrapure water in the critical state n subcritical state is used as supercritical water or subcritical water, because it contains almost no impurities, there will be no impurities left after removing organic matter. The semi-conducting device and the manufacturing method of the display device, because the super-conducting water can be used for the semi-conducting device .. The base has no photoresistance, and the order of the photoresistance is complete. (2 〖〇χ 297mm) < Please read the precautions on the back before filling out this page) --fn —1 ϋ I ϋ Line (-46- Economy 钋 Wisdom Leaf Production Bureau Employee Consumption Cooperative printed A7- -1 ---------- --- 5. Description of the invention (44) Oxidative decomposition and removal, so no photoresist will remain. Therefore, it can prevent the instability of element characteristics caused by m of photoresist. Χ, the photoresist stripping solution used in the past is low in safety and dangerous, but the use of supercritical water can ensure safety in operation. Also, the waste liquid after use does not contain harmful substances to people. It can perform simple waste liquid treatment, and because there are very few impurities in supercritical water, etc., After the photoresist is removed, there will be no contamination caused by impurities / pure substances remaining on the substrate. Moreover, the organic matter removal device on the substrate according to the present invention can exist in the substrate because supercritical water or subcritical water can exist on the substrate The organic substances on the surface are more efficiently oxidized and removed, so that the production efficiency can be improved. The display of Ben Manmin is set up to manufacture a display device that includes a cleaning step for cleaning the substrate. Supercritical flow or subcritical fluids are used for cleaning, so you can omit the husband. Drying steps necessary in the tank cleaning method. The result can not only reduce the number of manufacturing steps and reduce manufacturing costs, but also improve Its production is careful, because no cleaning material remains, so it can prevent the surface of the substrate from being slammed, and it can display good display characteristics. Also, the manufacturing device of the display device of the present invention has no cleaning when cleaning the substrate. The net substance remains on the substrate, so no washing or drying process after washing is needed, and the purpose of reducing manufacturing costs can be achieved. In addition, because no net substance remains, it can be combined and manufactured _ ^ 易 边 _ ^ Show special According to the above description, according to the above description, the structure of the present invention can completely achieve the ingenious problems of the invention. Therefore, the present invention is of great significance in the industry. This paper standard is applicable to Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) 47- --I ---------- installation --------- order! ----- line (please read the precautions on the back before filling This page) 469529 B7 V. Description of the invention (45 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ Symbol description 1 ... Glass substrate 19 ... TFT array substrate 2 ... Lower coating film 2 ... Color filter group 3 ... amorphous silicon film (i-type a-Si) 21 ... second electrode group 4 ... gate insulating film 22 ... opposite substrate 4 '.., gate insulating film image 2 3 ... liquid crystal alignment film 5 … Gate wiring metal film image 2 4… adhesive 6 · .. first photoresist image 25… spacer material 7 ... anodized insulating film 26 ... TN alignment liquid crystal layer 8 ... phosphorus-containing amorphous silicon film (N + 27 ... polarizing plate a-Si) 29 ... backlight 9 ... contact electrode metal film 31 ... washing tank 10 a ... metal film for source wiring 3 2 ... substrate group 10b ... drain wiring With metal 33 ---- Carbon oxide tube 11 ... Second photoresist image container 12 ... Bottom gate TFT 34 ... High pressure pump 13 ... Transparent electrode film 35 ... Heat exchanger 13 '... Clear Electrode film image group 37 ... separation tank 14 ... third photoresist image 38 ..., adjustment valve 15 ... silicon dioxide protective film 3 9 ... recovery vacuum tube 16 ... TFT array substrate 40 ... cleaning device 17 … The first electrode group (transparent electrode film 41 ... injection tube image group) 42 ... the first discharge tube 18 .. · transistor (TFT) group 43 ... the second discharge tube The paper's inversion applies the Chinese national standard < CNS) A4 size (210x297 public love) I l · --- ^ Install -------- order ... 1.111! Line ((Please read the precautions on the back before filling this page), 48 · A7 B7 V. Description of the invention (46) 44 ... Cassette 54 ... Pressure control member 45 ... Supply member 55 ... Temperature control member 46 ... Storage tank 56 ... Separation tank 50 ... Light Resistance removal device 57 ... decompression chamber 51 ... reaction tank 58 ... recovery vacuum tube 52 ... supply member 59 ... discharge tube 5 3 ... ultra-pure water (please read the precautions on the back before filling in this page ) * Economic Village Printed Copy Zhang scale applicable Chinese National Standard (CNS) A4 size (210 X 297 mm)

Claims (1)

經濟部智慧財產局員工消費合作社印製 4 6 9 5 2 9 as B〇 CS D8 六、申請專利範圍 1. 一種基板上之有機物的去除方法,其特徵在於其係以超 臨界水或亞臨界水氧化去除存在於無機基板上之有機 物者。 2. 如申請專利範圍第1項之基板上之有機物的去除方法, 其中該有機物係經圖像化而呈現預定形狀之感光性樹 脂所形成之有機被膜。 3. 如申請專利範圍第1項之基板上之有機物的去除方法, 其中該超臨界水係使用電阻係數10百萬歐姆以上,且於 375 °C以上、22〇大氣壓力以上之超臨界狀態冬超铋水。 4. 如申請專利範圍第1項之基板上之有機物的去除方法, 其中該無機基板係由矽或玻璃所形成。 5. —種半導體裝置之製造方法,係藉微影成像術之進行而 形成元件圓像者,該微影成像術包含有以下步驟: 一圖像化標的膜形成步驟,係用以於凍導體基板上 形成圊像化標的膜者; 一塗佈步驟’係用以於該圖像化標的膜上塗佈光阻 者; 一光罩曝光步驟’係經具有預定光罩圖像之光罩, 使該光阻曝光,以於該光阻上形成光罩圖像之潛像冷.; 一顯像步驟,係用以將經曝光後之該光阻顯像,以 形成光阻圖像者; 一钱刻步驟’係用以蝕刻前述圖像化標的膜者;及 一光阻去除步驟’係以超臨界水或亞臨界水氧化去 除該光阻圖像者。 本紙張尺度適用中國囤家標準(CNS)A4規格(210x 297 ϋ ------:---:---β -衣--------訂··---^-----線·{ (锖先閱讀背面之注意事項再填寫本頁) -50- A8B8C8D8 六 經濟I智慧財產局員X消費合作杜印製 、申請專利範圍 6. 如申請專利範圍第5項之半導體裝置之製造方法,其係 進行直接曝光步驟以取代該光罩曝光步驟,而該直接曝 --------------裝--- <锖先Μ讀背面之注*爹項再填寫本頁> 光步驟則係以電子束於該光阻上直接描繪任意之囷像 者。 7. 如申請專利範圍第5項之半導體裝置之製造方法,其中 該超臨界水係使用電阻係數10百萬歐姆以上,且於375 °C以上、220大氣壓力以上之超臨界狀態之超純水。 8. —種顯示裝置之製造足法,係包含有以下步寧: 一基板製作步驟,係用以於基板上形成預定之元件 圖像者;及 一胞元製作步驟,係用以將該基板和與它成對之另 一基板相貼合以製成一胞元者; -線· 且,該基板製作步驟及該胞元製作步驟至少有一方 包含有一去除步驟,該去除步驟係用超臨界流體或亞臨 界流體去除存在於基板上之有機物者。 9.如申請專利範圍第S項之顯示裝置之製造方法,其中於 該基板製作步驟中用以去除有機物之步驟,係甩超臨界 水或亞臨界水進行有機物之氧化去除者。 10‘如申請專利範圍第8項之顯示裝置之製造方法,其中於 該胞元製作步驟中用以去除有機物之步驟,係一用超臨 界流體或亞臨界流體進行有機物之溶解去除之洗淨步 驟。 11_ 一種顯示裝置之製造方法,係用以製造具有於陣列基板 與相對基板間形成液晶層而構成液晶胞之顯示裝置 本紙張尺度適用中國國家標準CCNS)A4規格(210 X 297公釐} -51、 469529 A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 者,該製造方法包含有以下步驟: 基板製作步驟,係用以製作該陣列基板及相對基 板者;及 -液晶胞製作步驟’係用該陣列基板及相對基板製 作液晶胞者; 且,前述基板製作步驟中並具有一微影成像術,以 形成經圊像化而呈現有預定形狀之薄膜者,而該微影成 像術則包含有以下步驟: 一圏像化標的膜形成步驟,係用以於基板上形成圖 像化標的膜者; 一塗佈步驟’係用以於該囷像化標的膜上塗佈光阻 液者; 一光罩曝光步驟,係經具有預定光罩圖像之光罩, 使該光阻曝光,以於該光阻上形成光罩圖像之潛像者; 一顯像步驟,係用以將經曝光後之該光阻顯影,以 形成光阻圖像者; 一蝕刻步驟,係用以蝕刻前述圖像化標的膜者;及 —光阻去除步驟,係以超臨界水或亞踔界水氧化去 除該光阻圖像者。 12. 如申請專利範圍第11項之顯示裝£之皇脅進 行直接曝光步驟以取代該光罩塵光免驟,而AJU4#·洗 步驟則係以電子車於該_光阻上直接描紛任意之圓像者。 13. 如申請專利範圍第11項之顯示裝置之制造万法二其中 超臨界水係使用電阻係數10百萬歐姆以上’且於H5°C 本紙張尺度遶用中國國家標準(CNS)A4規格(210 X 297公爱) -52- — — — — —— — I — L I I 1《 衣--I ---- - 訂,'1!·'! — · 从 ί請先閱讀背面之注意事項再填寫本頁) I OQ 00809 ABCD 經濟I智慧財產局員1消費合作社印製 六、申請專利範圍 以上、220大氣壓力以上之超臨界狀態之超純水。 14. 如申請專利範圍第u項之顯示裝置之製造方法,其中該 液晶胞製作步驟中並包含有一以超臨界流體或亞臨界 流體洗淨前述陣列基板及/或相對基板之洗淨步驟。 15. 如申請專利範圍第14項之顯示裝置之製造方法,其中該 液晶胞製作步驟中又具有一配向膜形成步驟,以於前述 陣列基板及/或相對基板上形成配向膜者;又,前述洗淨 步驟則係於該配向膜形成步驟之前及/或後進行。 16. 如申請專利範圍第15項之顯示裝置之製造方法,其中該 液晶胞製作步驟係具有以下步驟: 一貼合步驟,係用以將前述陣列基板與相對基 板相貼合’以組成一空胞元者;及 一液晶注入步驟,係將液晶注入至該空胞元之内部 者; 又’前述洗淨步驟則係於貼合步驟或液晶注入步驟 中至少有一方之步驟之前及/或後進行。 17. 如申請專利範圍第14項之顯示裝置之製造方法,其中該 液晶胞製作步驟係具有以下步驟: 一配向膜形成步驟<係用以於前述陣列基板及/或相 對基板上形成配向膜者;及 一配向處理步驟,係對該配向膜施予配向處理者; 又’前述洗淨步驟則係於該配向膜形成步驟或配向 處理步稀申至少有—方之步驟之前及/或後進行。 18·如申請專利範圍第17項之顯示裝置之製造方法,其中該 本紙張尺5過用侧家標準x 297 — - — — — — — — I » I I I } i i I 一aj— — — — — —— — — <請先閱讀背面之注意事項再填寫本頁) •53- 經濟部智慧財產局員工消費合作社印製 A8 95 2 9 cl —_____D8 六、申請專利範圍 液晶胞製作步称係具有以下步驟: 一貼合步騄,係用以將前述陣列基板與相對基板相 貼合,以組成一空胞元者;及 一液晶注入步驟,係將液晶注入至該空胞元之内部 者; 又’前述洗淨步驟則係於貼合步驟或液晶注入步驟 中至少有一方之步驟之前及/或後進行》 19‘如申請專利範圍第η項之顯示裝置之製造方法,其中該 液晶胞製作步驟係具有以下步驟: 一貼合步驟,係用以將前述陣列基板與相對基板相 貼合,以組成一空胞元者;及 一液晶注入步驟,係將液晶注入至該空胞元之内部 者; 又,前述洗淨步驟則係於貼合步驟或液晶注入步驟 中至少有一方之步驟之前及/或後進行。 20. —種顯示裝置之製造方法,係用以製造具有於附有電極 之基板與電極間形成有載子輸送層及發光層之電激發 光胞之顯示裝置者,該製造方法包含有以下步驟: 一附有電極之基板之製作步驟,係用以製作附有電 極之基板者;及 —電激發光胞製作步驟,係用該附有電極之基板製 作該電激發光胞者; 且,該附有電極之基板之製作步驟中並具有_微影 成像術,以形成經圖像化而呈現預定形狀之薄膜者,而 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公楚) -------------一 ^--------— ^---- (請先閲讀背面之注意事項再填寫本頁) -54· A8B8C8D8 經濟部智慧財產局員工消费合作社印製 六、申請專利範圍 該微影成像術則包含有以下步驟: 一圖像化標的膜形成步驟,係用以於基板上形成圖 像化標的膜者; 一塗佈步驟,係用以於該圖像化標的膜上塗佈光阻 液者: 一光罩曝光步驟,係經具有預定光罩圓像4光罩, 使該光阻曝光,以於該光阻上形成光罩圖像之潛像者; 一顯像步驟,係用以將經曝光後之該光阻顯像,以 形成光阻圖像者; 一蝕刻步驟,係用以蝕刻前述圖像化標的膜者;及 _光阻去除步驟,係以超臨界水或亞臨界水氧化去 除該光阻圖像者。 21. 如申請專利範圍第20項之顯示裝置之製造方法,其係進 行直接曝光步驟以取代該光罩曝光步驟,而該直接曝光 步驟則係以電子束於該光阻上直接描繪任意之圆像者。 22. 如申請專利範圍第20項之顯示裝置之製造方法,其中該 超臨界水係使用電阻係數10百萬歐姆以上,且於375°c 以上、220大氣壓力以上之超臨界狀態之超純水。 23. 如申請專利範圍第20項之顯示裝置之製造方法,其中該 電激發光胞製作步驟中並包含有一以超臨界流體或亞 臨界流體洗淨前述附有電極之基板之洗淨步驟。 24. 如申請專利範圍第23項之顯示裝置之製造方法,其中該 電激發光胞製作步驟係具有以下步驟: 一載子輸送層形成步驟,係用以於該附有電極之基 本紙張尺度適用中國國家標準(CNS)A4規格(2J0 >c 297公釐) -55- -------------裝--------訂---------線 (請先Μ讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4 β 9 5 2 9 Β8 • C8 __D8 _ 六、申請專利範圍 板上形成該載子輸送層者;及 一發光層形成步驟,係用以於該載子輸送層上形成 發光層者; 又’前述洗淨步驟則係於該載子輸送層形成步驟或 發光層形成步驟中至少有一方之步驟之前及/或後進行。 25. 如申請專利範圍第24項之顯示裝置之製造方法,其中該 電激發光胞製作步驟中並具有一貼合步驟,以將該附有 電極之基板和與其成對之相對基板相貼合者;又,前述 洗淨步驟則係於該貼合步驟之前及/或後進行。 26. 如申請專利範圍第23項之顯示裝置之製造方法,其中該 電激發光胞製作步驟係具有以下步驟: 一發光層形成步驟,係用以於該附有電極之基板上 形成該發光層者;及 一載子輸送層形成步驟,係用以於該發光層上形成 載子輸送層者; 又’前述洗淨步驟則係於該載子輸送層形成步驟或 發光層形成步驟中至少有一方之步驟之前及/或後進行C 27_如申請專利範圍第26項之顯示裝置之製造方法,其中該 電激發光胞製作步驟中並具有一貼合步驟,以將該附有 電極之基板和與其成對之相對基板相貼合者:又,前述 洗淨步称則係於該貼合步驟之前及/或之後進行。 28. —種顯示震置之製造方法,係用以製造具有於陣列基板 與相對基板間形成竦晶層而構成液晶胞&顯示裝置 者’該製造方法包含有以下步驟: 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱〉 -----^----r---ί 來--------訂·---:-----線< (請先Μ讀背面之注意事項再填寫本頁) •56- 申請專利範圍 A8 B8 C8 D8 經濟奉智慧財產局員工消費合作社印製 一基板製作步驟,係用以製作該陣列基板及相對基 板者:及 一液晶胞製作步驟,係用該陣列基板及相對基板製 作該液晶胞者; 且,該液晶胞製作步驟中並包含有一以超臨界流體 或亞臨界流體洗,前述陣列基板及/或相對基板之洗淨 步驟。 29. 如申請專利範圍第28項之顯示裝置之製造方法,其中該 液晶胞製作步驟中並具有一配向膜形成步驟,以於前述 陣列基板及/或相對基板上形成配向膜者;又,前述洗淨 步驟則係於該配向膜形成步驟之前及/或後進行。 30. 如申請專利範圍第29項之顯示裝置之製造方法,其中該 液晶胞製作步驟係具有以下步驟: 一貼合步驟,係用以將前述陣列基板與相對基 板相貼合,以組成一空胞元者;及 一液晶注入步驟’係將液晶注入至該空胞元之内部 者; 又,前述洗淨步驟則係於貼合步驟或液晶注入步驟 中至少有一方之步驟之前及/或後進行。 31. 如申請專利範圍第28項之顯示裝置之製造方法,其中該 液晶胞製作步驟係具有以下步驟: 一配向膜形成步驟,係用以於前述陣列基板及/或相 對基板上形成配向膜者:及 一配向處理步驟,係對該配向膜施予配向處理者; 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閲讀背面之注意事項再填寫本頁) 裝 訂· 線· -57- 469529 經濟部智慧財產局貝工消費合作杜印製 Α8 Β8 CS D8 六、申請專利範圍 又’前述洗淨步驟則係於該配向膜形成步驟或配向 處理步驟中至少有一方之步驟之前及/或後進行。 32.如申請專利範圍第31項之顯示裝置之製造方法,其中該 液晶胞製作步驟係具有以下步驟: 一貼合步驟,係用以將前述陣列基板與相對基板相 貼合,以組成一空胞元者;及 一液晶注入步驟,係將液晶注入至該空胞元之内部 者; 又’前述洗if步驟則係於貼合步驟或液晶注入步驟 中至少有一方之步驟之前及/或後進行。 33•如申請專利範圍第28項之顯示裝置之製造方法,其中該 液晶胞製作步驟係具有以下步驟: 一貼合步驟’係用以將前述陣列基板與.¾對基板相 貼合,以組成一空胞元者;及 一液晶注入步驟,係將液晶注入至該空胞元之内部 者; 又,前述洗淨步驟則係於貼合步驟或液晶注入步驟 中至少有一方之步驟之前及/或後進行。 34. 如申請專利範圍第28項之顯示裝置之製造方法,其中該 陣列基板及相對基板係使用樹脂基板者。 35. 如申請專利範圍第28項之顯示裝置之製造方法,其中該 超臨界流體或亞臨界流體係使用吟超臨界狀態或亞臨 界狀態之二氧化碳。 36. 如申請專利範圍第28項之顯示裝置之製造方法,其中該 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公窆) ------------ί^--------訂—ϊ-----線·< (猜先閲讀背面之注意事項再填寫本頁) -58- A8 B8 C8 D8 六 經濟部智慧財產局員工消費合作杜印製 申請專利範圍 洗淨步驟係以超臨界流體或亞臨界流趙進行多次洗淨 者。 37 ‘一種顯示裝置之製造方法’係用以製造具有於附有電極 之基板與電極間形成有載子輸送層及發光層之電激發 光胞之顯示裝置者,該製造方法包含有以下步辟: 一附有電極之基板之製作步驟,係用以製作該附有 電極之基板者;及 一電激發光胞製作步称,係用該附有電極之基板製 作該電激發光胞者; 且,該電激發光胞製作步驟中並包含有一以超臨界 流體或亞臨界流體洗淨前述附有電極之基板之洗淨步 驟。 38. 如申請專利範圍第37項之顯示裝置之製造方法,其中該 電激發光胞製作步驟係具有以下步驟: 一載子輸送層形成步驟,係用以於該附有電極之基 板上形成該載子輸送層者;及 一發光層形成步驟,係用以於該載子輸送層上形成 發光層者; 又,前述洗淨步驟則係於該載子輪送層形成步驟或 發光層形成步驟中至少有一方之步驟之前及/或後進行。 39. 如申請專利範圍第38項之顯示裝置之製造方法,其中該 電激發光胞製作步驟中並具有一貼合步驟’以將該咐有 電極之基板和與其成對之相對基槔相貼合者;又,前述 洗淨步驟則係於該貼合步驟之前及/或後進行。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -------------裝--------訂1 ^1 ϋ i t— n I 線 (請先M讀背面之注意事項再填寫本頁) -59- 經濟部智慧財產局員工消費合作社印製 469529 _ SI__ 六、申請專利範圍 40_如申請專利範团第37項之顯示裴置之製造方法其中該 電激發光胞製.作步驟係具有以下步驟: 一發光層形成步称,係用以於該附有電極之基板上 形成該發光層者;及 一載子輸送層形成步驟,係用以於該發光層上形成 載子輸送層者; 又,前述洗淨步驟則係於該載子輸送層形成步驟或 發光層形成步驟中至少有一方之步驟之前及/或後進行。 41·如申請專利範圍第40項之顯示裝置之製造方法,其中該 電激發光胞製作步驟中並具有一貼合步称,以將該附有 電極之基板和與其成對之相對基板相貼合者;又,前述 洗淨-步驟則係於該貼合步驟之前及/或後進行。 42.如申請專利範圍第37項之顯示裝置之製造方法其中該 載子輸送層係具有電洞輸送層或一電子輸送層者。 43_如申請專利範圍第37項之顯示裝置之製造方法其中該 附有電極之基板及相對基板係使用樹脂基板者β 44. 如申請專利範圍第37項之顯示裝置之製造方法其中該 超臨界流體或亞臨界流體係使用於超臨界狀態或亞臨 界狀態之二氧化碳。 45. 如申請專利範圍第37項之顯示裝置之製造方法,其中該 洗淨步驟係以超臨界流體或亞臨界流體進行多次洗淨 者。 46. —種基板上之有機物的去除裝置,係用以去除存在於基 板上之有機物者,該、去除赛置包含有: 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) {、取--------訂------------線.^ (靖先«讀背面之注意事項再填寫本頁) -60· A8 BS C8 D8 -六、申請專利範圍 一反應槽,係用以收容該基板並以超臨界水或亞臨 界水氧化去除該基板者; 一供給構件,係用以對該反應槽供水者; 一壓力控制構件,係用以將該反應槽内部加壓至該 水之臨界壓力以上者;及 一溫度控制構件,係用以將該反應槽内部加熱至該 水之臨界溫度以上者《 47. 如申請專利範圍第46項之基板上之有機物的去除裝 置’其中該反應槽係一具有至少220大氣壓力以上耐壓 性及375°C以上耐熱性之氣密容器者。 48. 如申請專利範圍第私項之基板上之有機物的去除裝 置’其中該反應槽係可同時收容多片該基板於其内部 者。 49‘一種顯示裝置之製造裝置,該製造裝置具有一洗淨裝 置’用以洗淨基板或以成對基板相貼合而構戌之胞元 者,該洗淨裝置包含有: 一保持構件,係用以保持該基板或胞元者; 經 濟 部- 智 慧 財- 產 局 員 工 消· 費 合 η. 社 印 製 一洗淨槽,係用以收容以該保持構件保持之該基板 或胞元,並以超臨界流體或亞臨界流體洗淨該基板或胞 元者;及 一供給構件’係用以供給該超臨界流體或亞臨界流 體至該洗淨槽者。 50.如申請專利範圍第49項之顯示裝置之製造裝置,其中該 供給構件中設置有一用以貯存該超臨界流體或亞臨界 本紙張尺度適用中國國家標準(CNS)A4規格(210 * 297公釐) -61- 4 〇 S ο 2 9 頜 C8 DS 六、申請專利範圍 流體之貯存組件° (請先Μ讀背面之注意事項再填寫本頁) ^--------訂-----^-----線*{ 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公餐) -62-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 9 5 2 9 as B〇CS D8 VI. Application for patent scope 1. A method for removing organic matter on a substrate, characterized in that it is supercritical water or subcritical water Oxidation removes organic matter present on the inorganic substrate. 2. The method for removing organic matter on a substrate according to item 1 of the scope of patent application, wherein the organic matter is an organic coating formed by a photosensitive resin that is imaged to have a predetermined shape. 3. For the method of removing organic matter on the substrate as described in the first item of the patent application scope, wherein the supercritical water system uses a supercritical state with a resistivity of 10 million ohms or more and a temperature of 375 ° C or more and 22o atmospheric pressure or more Super bismuth water. 4. The method for removing organic matter on a substrate according to item 1 of the application, wherein the inorganic substrate is formed of silicon or glass. 5. —A method for manufacturing a semiconductor device, which is used to form a circle image of a device by performing lithography. The lithography includes the following steps: A step of forming a film of an imaging target is used to freeze a conductor Those who form a target film on a substrate; a coating step 'is used to apply a photoresist on the film of the target; a mask exposure step' is a photomask having a predetermined mask image, Exposing the photoresist to form a latent image of the mask image on the photoresist; and a developing step for developing the photoresist after exposure to form a photoresist image; A “money engraving step” is used to etch the film of the aforementioned image target; and a photoresist removal step is used to remove the photoresist image by supercritical water or subcritical water oxidation. This paper size is applicable to China Store Standard (CNS) A4 specification (210x 297 ϋ ------: ---: --- β-clothing -------- Order -------- ^- ---- Line · ((Please read the precautions on the back before filling in this page) -50- A8B8C8D8 Six Economy I Member of Intellectual Property Bureau X Consumption Cooperative Printing, Patent Application Scope. A method for manufacturing a semiconductor device is to perform a direct exposure step instead of the photomask exposure step, and the direct exposure -------------- install --- read the first back Note * Please fill in this page again> The light step is to directly draw any image on the photoresist with an electron beam. 7. If the method of manufacturing a semiconductor device according to item 5 of the patent application, the supercritical The water system uses ultrapure water with a resistivity of more than 10 million ohms, and a supercritical state above 375 ° C and above 220 atmospheric pressure. 8. —A method for manufacturing a display device, including the following steps: A substrate manufacturing step is used to form a predetermined element image on the substrate; and a cell manufacturing step is used to pair the substrate with another The substrates are attached to form a cell;-line, and at least one of the substrate production step and the cell production step includes a removal step, which removes the existence of the supercritical fluid or subcritical fluid Organic matter on the substrate. 9. The method for manufacturing a display device according to item S of the patent application scope, wherein the step of removing organic matter in the substrate manufacturing step is to remove supercritical water or subcritical water to oxidize and remove organic matter. 10 'The method for manufacturing a display device according to item 8 of the scope of patent application, wherein the step of removing organic matter in the cell manufacturing step is a washing process in which supercritical fluid or subcritical fluid is used to dissolve and remove organic matter. 11_ A method for manufacturing a display device is used to manufacture a display device having a liquid crystal layer formed between an array substrate and an opposite substrate to form a liquid crystal cell. The paper size is applicable to the Chinese National Standard CCNS) A4 specification (210 X 297 mm). } -51, 469529 A8 B8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The manufacturing method includes the following steps: a substrate manufacturing step for fabricating the array substrate and an opposite substrate; and-a liquid crystal cell manufacturing step for fabricating a liquid crystal cell using the array substrate and the opposite substrate; and In the step, there is a lithography imaging method to form a film with a predetermined shape after being imaged, and the lithography imaging method includes the following steps: A film forming step of imaging a target is used for A film forming a target film on a substrate; a coating step 'is used to apply a photoresist on the film of the target film; a photomask exposure step is a photomask having a predetermined photomask image A photoresist for exposing the photoresist to form a latent image of the photomask on the photoresist; a developing step for developing the photoresist after exposure to form a photoresist image; The etching step is used to etch the film of the aforementioned image object; and the photoresist removal step is to remove the photoresist image by oxidation with supercritical water or submarine boundary water. 12. For example, if the display device of the patent application No. 11 is installed, the direct exposure step is performed instead of the photomask, and the AJU4 # · washing step is directly described by the electronic car on the photoresist. Arbitrary circle like. 13. For the manufacturing method of display device No. 11 in the scope of patent application, the supercritical water system uses a resistivity of more than 10 million ohms', and the Chinese paper standard (CNS) A4 specification is used at H5 ° C. 210 X 297 public love) -52- — — — — —— — I — LII 1 《Yi--I -----Order, '1! ·'! — · Please read the precautions on the back before reading (Fill in this page) I OQ 00809 ABCD Economy I Member of Intellectual Property Bureau 1 Printed by Consumer Cooperatives 6. Ultra-pure water in supercritical state above patent application scope and above 220 atmospheric pressure. 14. The method for manufacturing a display device according to item u of the application, wherein the liquid crystal cell manufacturing step includes a cleaning step of cleaning the array substrate and / or the opposite substrate with a supercritical fluid or a subcritical fluid. 15. The method for manufacturing a display device according to item 14 of the patent application, wherein the liquid crystal cell manufacturing step further includes an alignment film forming step for forming an alignment film on the aforementioned array substrate and / or the opposite substrate; The washing step is performed before and / or after the alignment film forming step. 16. The method for manufacturing a display device according to item 15 of the scope of patent application, wherein the manufacturing process of the liquid crystal cell has the following steps: a bonding step for bonding the aforementioned array substrate and the opposite substrate to form an empty cell A liquid crystal injection step, which injects liquid crystal into the interior of the empty cell; and the 'washing step is performed before and / or after at least one of the bonding step or the liquid crystal injection step. . 17. The method for manufacturing a display device according to item 14 of the patent application scope, wherein the liquid crystal cell manufacturing step has the following steps: An alignment film forming step < is used to form an alignment film on the aforementioned array substrate and / or the opposite substrate And an alignment processing step, which is to apply the alignment treatment to the alignment film; and the 'washing step is performed before the alignment film formation step or the alignment processing step is at least one of the steps before and / or after get on. 18. The manufacturing method of the display device according to item 17 of the scope of patent application, wherein the paper rule 5 is used at home side standard x 297 —-— — — — — — I »III} ii I 一 aj — — — — — —— — — < Please read the precautions on the back before filling out this page) • 53- Printed by Employee Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs A8 95 2 9 cl —_____ D8 VI. Application scope for patent application The following steps: a bonding step for bonding the aforementioned array substrate and an opposite substrate to form an empty cell; and a liquid crystal injection step for injecting liquid crystal into the interior of the empty cell; and 'The aforementioned washing step is performed before and / or after the step of at least one of the bonding step or the liquid crystal injection step' 19 'If the method for manufacturing a display device according to the item η of the patent application scope, wherein the liquid crystal cell manufacturing step The system has the following steps: a bonding step for bonding the aforementioned array substrate and an opposite substrate to form an empty cell; and a liquid crystal injection step for injecting liquid crystal The element of internal ghosts persons; and, the cleaning step is based on liquid crystal or the bonding step at least for implantation step, and / or one of the prior steps. 20. —A manufacturing method of a display device is used for manufacturing a display device having an electrically excited photocell having a carrier transport layer and a light emitting layer formed between a substrate with an electrode and an electrode, and the manufacturing method includes the following steps : A manufacturing step of an electrode-attached substrate, which is used to make the electrode-attached substrate; and-an electrically excited photocell manufacturing step, which uses the electrode-attached substrate to make the electrically excited photocell; and, the In the manufacturing steps of the substrate with electrodes, _lithography imaging is used to form a film with a predetermined shape after being imaged, and this paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297) ) ------------- One ^ --------— ^ ---- (Please read the notes on the back before filling out this page) -54 · A8B8C8D8 Ministry of Economy Wisdom Printed by the Consumer Cooperative of the Property Bureau. 6. Scope of patent application. The lithography imaging method includes the following steps: a film formation step of an imaging target, which is used to form a film of an imaging target on a substrate; a coating step For coating on the film of the image target Liquid-blocker: a mask exposure step, which exposes the photoresist with a predetermined mask circle image 4 mask, to form a latent image of the mask image on the photoresist; a development step, A photoresist for developing the photoresist after exposure to form a photoresist image; an etching step for etching the film of the aforementioned imaging target; and a photoresist removal step for supercritical water or Subcritical water oxidation removes the photoresist image. 21. If the method of manufacturing a display device according to item 20 of the patent application is to perform a direct exposure step instead of the mask exposure step, the direct exposure step is to directly draw an arbitrary circle on the photoresist with an electron beam. Like 22. The manufacturing method of the display device according to item 20 of the patent application, wherein the supercritical water is ultrapure water in a supercritical state with a resistivity of 10 million ohms or more and a temperature of 375 ° c or more and 220 atmospheric pressure or more . 23. The method for manufacturing a display device according to claim 20, wherein the manufacturing step of the electrically excited photocell includes a cleaning step of cleaning the substrate with the electrode with a supercritical fluid or a subcritical fluid. 24. The method for manufacturing a display device according to item 23 of the patent application, wherein the step of making the electrically excited photocell has the following steps: A carrier transport layer forming step is applied to the basic paper size with electrodes China National Standard (CNS) A4 Specification (2J0 > c 297 mm) -55- ------------- Installation -------- Order --------- --Line (please read the precautions on the back before filling this page) printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 β 9 5 2 9 Β8 • C8 __D8 _ VI. The carrier is formed on the board for patent application Layer; and a light-emitting layer forming step for forming a light-emitting layer on the carrier transporting layer; and the aforementioned washing step is at least one of the carrier transporting layer forming step or the light-emitting layer forming step. This step is performed before and / or after. 25. The method for manufacturing a display device according to item 24 of the patent application, wherein the manufacturing step of the electrically excited photocell includes a bonding step to bond the substrate with the electrode and the opposite substrate paired with the substrate. Or; the aforementioned washing step is performed before and / or after the bonding step. 26. The method for manufacturing a display device according to item 23 of the patent application, wherein the step of making the electrically excited photocell has the following steps: A light-emitting layer forming step is used to form the light-emitting layer on the substrate with electrodes. And a carrier transporting layer forming step for forming a carrier transporting layer on the light emitting layer; and the aforementioned washing step is at least one of the carrier transporting layer forming step or the light emitting layer forming step. The method of manufacturing a display device according to item 26 of the patent application scope is carried out before and / or after one of the steps, wherein the electro-excited photocell manufacturing step includes a bonding step to the electrode-attached substrate Those who are bonded to the opposite substrates that are paired with each other: the aforementioned washing step is performed before and / or after the bonding step. 28. —A manufacturing method for displaying a display device, which is used for manufacturing a liquid crystal cell & display device having a crystal layer formed between an array substrate and an opposite substrate. The manufacturing method includes the following steps: This paper scale is applicable to China National Standard (CNS) A4 Specification (210 X 297 Public Love) ----- ^ ---- r --- ί Come -------- Order · ---: ----- line < (Please read the notes on the back before filling in this page) • 56- Application for patent scope A8 B8 C8 D8 Economics Intellectual Property Bureau Employees Consumer Cooperatives printed a substrate production step, which is used to make the array substrate and relative Substrate: and a liquid crystal cell manufacturing step, which uses the array substrate and an opposite substrate to fabricate the liquid crystal cell; and the liquid crystal cell manufacturing step includes washing with a supercritical fluid or a subcritical fluid, the aforementioned array substrate and / Or the step of cleaning the opposite substrate. 29. The method for manufacturing a display device according to item 28 of the patent application, wherein the liquid crystal cell manufacturing step further includes an alignment film forming step on the aforementioned array substrate and / or the opposite substrate. Those forming an alignment film; The washing step is performed before and / or after the alignment film forming step. 30. For the manufacturing method of the display device according to item 29 of the patent application, the liquid crystal cell manufacturing step has the following steps: a bonding step, It is used to attach the aforementioned array substrate and the opposite substrate to form an empty cell; and a liquid crystal injection step is to inject liquid crystal into the interior of the empty cell; and the aforementioned washing step is applied to the At least one of the combining step or the liquid crystal injection step is performed before and / or after the step. 31. For example, the method for manufacturing a display device according to item 28 of the patent application, wherein the liquid crystal cell manufacturing step has the following steps: an alignment film is formed Steps are for forming an alignment film on the aforementioned array substrate and / or an opposite substrate: and an alignment processing step is for applying an alignment treatment to the alignment film; This paper size applies the Chinese National Standard (CNS) A4 specification ( 210 X 297 mm) (Please read the notes on the back before filling out this page) Binding · Thread · -57- 469529 Shellfish Consumption Cooperation of Intellectual Property Bureau of the Ministry of Economic Affairs Du Yin Manufacturing A8 B8 CS D8 6. The scope of the patent application is also that the aforementioned washing step is performed before and / or after at least one of the alignment film forming step or the alignment processing step. 32. If the scope of patent application is the 31st item A method for manufacturing a display device, wherein the liquid crystal cell manufacturing step has the following steps: a bonding step for bonding the aforementioned array substrate and an opposite substrate to form an empty cell; and a liquid crystal injection step, The liquid crystal is injected into the inside of the empty cell; and the 'if washing step is performed before and / or after at least one of the bonding step or the liquid crystal injection step. 33. The manufacturing method of the display device according to item 28 of the patent application scope, wherein the liquid crystal cell manufacturing step has the following steps: A bonding step is used for bonding the aforementioned array substrate to a pair of substrates to form An empty cell; and a liquid crystal injection step in which liquid crystal is injected into the empty cell; and the washing step is performed before at least one of the bonding step or the liquid crystal injection step and / or After that. 34. The method for manufacturing a display device according to item 28 of the application, wherein the array substrate and the opposite substrate are resin substrates. 35. The method for manufacturing a display device according to item 28 of the application, wherein the supercritical fluid or subcritical flow system uses carbon dioxide in a supercritical state or a subcritical state. 36. For the manufacturing method of the display device under the scope of application for patent No. 28, wherein the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 gong) ------------ ί ^ -------- Order—ϊ ----- line · &(; guess first read the notes on the back before filling out this page) -58- A8 B8 C8 D8 Sixth, the Intellectual Property Bureau of the Ministry of Economic Affairs, consumer cooperation The cleaning steps in the scope of Du's patent application are those in which the supercritical fluid or subcritical fluid is used for multiple washings. 37 'A manufacturing method of a display device' is used for manufacturing a display device having an electrically excited photocell having a carrier transport layer and a light emitting layer formed between a substrate with an electrode and an electrode. The manufacturing method includes the following steps: : A manufacturing step of an electrode-attached substrate, which is used to make the electrode-attached substrate; and an electrically-excited photocell manufacturing step, which uses the electrode-attached substrate to make the electrically-excited photocell; and The step of manufacturing the electrically excited photocell includes a cleaning step of cleaning the substrate with the electrode with a supercritical fluid or a subcritical fluid. 38. The method for manufacturing a display device according to item 37 of the application for patent, wherein the step of making the electrically excited photocell has the following steps: a carrier transport layer forming step for forming the electrode on the substrate with the electrode A carrier transporting layer; and a light emitting layer forming step for forming a light emitting layer on the carrier transporting layer; and the aforementioned washing step is a step of forming a carrier wheel or a light emitting layer. At least one of the steps is performed before and / or after. 39. The method for manufacturing a display device according to item 38 of the application, wherein the manufacturing step of the electrically excited photocell has a bonding step 'to stick the substrate with the electrode and the opposite base paired with it. Combination; and the aforementioned washing step is performed before and / or after the bonding step. This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ------------- Installation -------- Order 1 ^ 1 ϋ it— n I (Please read the notes on the back before filling out this page) -59- Printed by the Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economic Affairs 469529 _ SI__ VI. Application for a patent scope 40_ If the display of the patent application group item 37 shows Pei Zhi In the manufacturing method, the electro-excited photocell system is provided with the following steps: a step of forming a light-emitting layer, which is used to form the light-emitting layer on the substrate with an electrode; and a step of forming a carrier transport layer Is used to form a carrier transport layer on the light-emitting layer; and the washing step is performed before and / or after at least one of the carrier transport layer formation step or the light-emitting layer formation step. 41. The method for manufacturing a display device according to item 40 of the application for a patent, wherein the manufacturing step of the electro-excited photocells has a bonding step to attach the electrode-attached substrate to a pair of opposite substrates. Combination; and the aforementioned washing-step is performed before and / or after the bonding step. 42. The method for manufacturing a display device according to item 37 of the application, wherein the carrier transporting layer is a hole transporting layer or an electron transporting layer. 43_ If the method for manufacturing a display device according to item 37 of the patent application, wherein the electrode-attached substrate and the opposite substrate are resin substrates β 44. If the method for manufacturing a display device according to item 37 of the patent application, the supercritical Fluid or subcritical flow systems are used in supercritical or subcritical carbon dioxide. 45. The method for manufacturing a display device according to item 37 of the application, wherein the washing step is performed by using a supercritical fluid or a subcritical fluid for multiple washings. 46. — A device for removing organic matter on a substrate, which is used to remove organic matter existing on the substrate. The removal device includes: This paper size is applicable to China National Standard (CNS) A4 (210 X 297) ) {, Take -------- order ------------ line. ^ (Jingxian «read the precautions on the back before filling this page) -60 · A8 BS C8 D8- 6. Scope of patent application: A reaction tank is used to receive the substrate and remove the substrate by supercritical water or subcritical water oxidation; a supply member is used to supply water to the reaction tank; a pressure control member is A device for pressurizing the inside of the reaction tank to a temperature above the critical pressure of the water; and a temperature control member for heating the inside of the reaction tank to a temperature above the critical temperature of the water "47. 46 The device for removing organic matter on the substrate according to the item, wherein the reaction tank is an airtight container having a pressure resistance of at least 220 atmospheric pressure and a heat resistance of 375 ° C or more. 48. For an organic matter removing device on a substrate, which is the private item in the scope of patent application, wherein the reaction tank is capable of simultaneously accommodating multiple pieces of the substrate in the substrate. 49'A manufacturing device for a display device, the manufacturing device having a cleaning device'for cleaning substrates or cells assembled by pairing substrates, the cleaning device includes: a holding member, It is used to hold the substrate or cell; the Ministry of Economic Affairs-Wisdom Wealth-Industry Bureau staff consumption fee η. The company printed a washing tank, which is used to accommodate the substrate or cell held by the holding member, The substrate or the cells are cleaned with a supercritical fluid or a subcritical fluid; and a supply member is used to supply the supercritical fluid or the subcritical fluid to the cleaning tank. 50. The manufacturing device of the display device according to item 49 of the scope of patent application, wherein the supply member is provided with a paper for storing the supercritical fluid or subcritical paper. The size of the paper is applicable to China National Standard (CNS) A4 (210 * 297) (Centi) -61- 4 〇S ο 2 9 Jaw C8 DS VI. Patent application scope fluid storage components ° (Please read the precautions on the back before filling this page) ^ -------- Order- --- ^ ----- 线 * {Printed on the paper by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, this paper applies Chinese National Standard (CNS) A4 (210 X 297 meals) -62-
TW89121324A 1999-10-12 2000-10-12 Method and apparatus for removing organic substance on substrate, method for producing semiconductor device, and method and apparatus for producing display device TW469529B (en)

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JP28958099A JP2001110711A (en) 1999-10-12 1999-10-12 Eliminating method of organic thin film, manufacturing method of semiconductor device and liquid crystal display device using the method, and eliminating equipment of organic thin film used for manufacturing
JP2000063954A JP2001255502A (en) 2000-03-08 2000-03-08 Method for manufacturing flat panel display, and its manufacturing apparatus

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JPH06222370A (en) * 1993-01-25 1994-08-12 Sony Corp Production of liquid crystal panel
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