TW466785B - Thin-type photosensitive semiconductor device - Google Patents
Thin-type photosensitive semiconductor deviceInfo
- Publication number
- TW466785B TW466785B TW089121163A TW89121163A TW466785B TW 466785 B TW466785 B TW 466785B TW 089121163 A TW089121163 A TW 089121163A TW 89121163 A TW89121163 A TW 89121163A TW 466785 B TW466785 B TW 466785B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- semiconductor device
- encapsulant
- opening
- thin
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 8
- 239000008393 encapsulating agent Substances 0.000 abstract 4
- 238000007789 sealing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW089121163A TW466785B (en) | 2000-10-11 | 2000-10-11 | Thin-type photosensitive semiconductor device |
JP2001027456A JP3376356B2 (ja) | 2000-10-11 | 2001-02-02 | 薄型感光式半導体装置 |
US09/837,804 US6683386B2 (en) | 2000-10-11 | 2001-04-18 | Low profile optically-sensitive semiconductor package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW089121163A TW466785B (en) | 2000-10-11 | 2000-10-11 | Thin-type photosensitive semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
TW466785B true TW466785B (en) | 2001-12-01 |
Family
ID=21661495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW089121163A TW466785B (en) | 2000-10-11 | 2000-10-11 | Thin-type photosensitive semiconductor device |
Country Status (3)
Country | Link |
---|---|
US (1) | US6683386B2 (zh) |
JP (1) | JP3376356B2 (zh) |
TW (1) | TW466785B (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
JP2002353369A (ja) * | 2001-05-28 | 2002-12-06 | Sharp Corp | 半導体パッケージおよびその製造方法 |
US7358618B2 (en) * | 2002-07-15 | 2008-04-15 | Rohm Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2005116670A (ja) * | 2003-09-18 | 2005-04-28 | New Japan Radio Co Ltd | 受発光素子の製造方法 |
US8080870B2 (en) * | 2009-06-18 | 2011-12-20 | Intel Corporation | Die-warpage compensation structures for thinned-die devices, and methods of assembling same |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
WO2011050336A2 (en) * | 2009-10-22 | 2011-04-28 | Sionyx, Inc. | Semiconductor devices having an enhanced absorption region and associated methods |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
CN103081128B (zh) | 2010-06-18 | 2016-11-02 | 西奥尼克斯公司 | 高速光敏设备及相关方法 |
US9165795B2 (en) * | 2010-12-09 | 2015-10-20 | Cypress Semiconductor Corporation | High performance low profile QFN/LGA |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
JP2014525091A (ja) | 2011-07-13 | 2014-09-25 | サイオニクス、インク. | 生体撮像装置および関連方法 |
US9219016B2 (en) | 2011-09-28 | 2015-12-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure design for 3DIC testing |
US8878182B2 (en) * | 2011-10-12 | 2014-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Probe pad design for 3DIC package yield analysis |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
KR20150130303A (ko) | 2013-02-15 | 2015-11-23 | 사이오닉스, 아이엔씨. | 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서 |
US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
WO2014209421A1 (en) | 2013-06-29 | 2014-12-31 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6365840A (ja) * | 1986-04-04 | 1988-03-24 | オリンパス光学工業株式会社 | 内視鏡 |
JPH0373559A (ja) * | 1989-08-15 | 1991-03-28 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5650593A (en) * | 1994-05-26 | 1997-07-22 | Amkor Electronics, Inc. | Thermally enhanced chip carrier package |
US5892290A (en) * | 1995-10-28 | 1999-04-06 | Institute Of Microelectronics | Highly reliable and planar ball grid array package |
US6117705A (en) * | 1997-04-18 | 2000-09-12 | Amkor Technology, Inc. | Method of making integrated circuit package having adhesive bead supporting planar lid above planar substrate |
TW360935B (en) * | 1997-11-14 | 1999-06-11 | Amic Technology Inc | Variable package structure and process for producing the same |
JP2001185657A (ja) * | 1999-12-10 | 2001-07-06 | Amkor Technology Korea Inc | 半導体パッケージ及びその製造方法 |
JP2002043632A (ja) * | 2000-07-21 | 2002-02-08 | Citizen Electronics Co Ltd | 発光ダイオード |
-
2000
- 2000-10-11 TW TW089121163A patent/TW466785B/zh not_active IP Right Cessation
-
2001
- 2001-02-02 JP JP2001027456A patent/JP3376356B2/ja not_active Expired - Fee Related
- 2001-04-18 US US09/837,804 patent/US6683386B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2002134640A (ja) | 2002-05-10 |
JP3376356B2 (ja) | 2003-02-10 |
US6683386B2 (en) | 2004-01-27 |
US20020047200A1 (en) | 2002-04-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW466785B (en) | Thin-type photosensitive semiconductor device | |
TW200513766A (en) | Bonding pad structure for a display and fabrication method thereof | |
SG148851A1 (en) | Stacked semiconductor packages | |
TW200705519A (en) | Semiconductor package without chip carrier and fabrication method thereof | |
TW200627616A (en) | Semiconductor device and fabrication method thereof | |
TWI257179B (en) | High-speed compound semiconductor device operable at large output power with minimum leakage current | |
WO2004095514A3 (en) | Circuit device with at least partial packaging and method for forming | |
TW200605281A (en) | Manufacturing method of semiconductor device | |
TW200713551A (en) | Packages, methods for fabricating the same, anisotropic conductive films, and conductive particles utilized therein | |
TW200733026A (en) | Circuit structure of a display | |
SG77704A1 (en) | Semiconductor device and method of fabricating the same | |
TW200723969A (en) | Power core devices and methods of making thereof | |
TW200633188A (en) | Methods and structures for electrical communication with an overlying electrode for a semiconductor element | |
KR20070100849A (ko) | 파워 반도체 패키지 | |
TWI268591B (en) | Semiconductor device | |
CN103839931A (zh) | 双芯片的双面封转结构 | |
SG122016A1 (en) | Semiconductor chip package and method of manufacture | |
WO2006061792A3 (en) | Hermetically sealed integrated circuit package | |
TW200501290A (en) | A semiconductor device and manufacturing method thereof | |
SG94715A1 (en) | Semiconductor device and method of fabricating the same | |
TW200516737A (en) | Chip package and substrate | |
WO2006044061A3 (en) | Die attach paddle for mounting integrated circuit die | |
CN104037146B (zh) | 封装结构以及封装方法 | |
TW200633083A (en) | Semiconductor package with low and high-speed signal paths | |
TW200721442A (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |