TW466278B - Method and apparatus for thin film deposition - Google Patents

Method and apparatus for thin film deposition Download PDF

Info

Publication number
TW466278B
TW466278B TW89122600A TW89122600A TW466278B TW 466278 B TW466278 B TW 466278B TW 89122600 A TW89122600 A TW 89122600A TW 89122600 A TW89122600 A TW 89122600A TW 466278 B TW466278 B TW 466278B
Authority
TW
Taiwan
Prior art keywords
gas
processing chamber
thin film
gas supply
silicon
Prior art date
Application number
TW89122600A
Other languages
Chinese (zh)
Inventor
Nobuo Tokai
Toshiyuki Tsukamoto
Seiji Arima
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW466278B publication Critical patent/TW466278B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

This invention provides the method and apparatus for thin film deposition. An epitaxial growth device (10) comprises a chamber (12) for enclosing semiconductor wafers (100), and a gas supply (16) for supplying process gas to the chamber. The gas supply (16) includes a HCl supply line (32) for supplying the chamber with HCl gas as a cleaning gas, a SiH4 supply line (34) for supplying a SiH4 gas to the HCl supply line (32), a controller (36), and a heater (38). The controller (36) controls the flow rate of the HCl gas and the SiH4 gas to supply the SiH4 gas to the HCl supply line (32) before the HCl gas is supplied to the chamber (18) through the HCl supply line (32). The heater (38) heats the HCl supply line (32).

Description

公告本 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（1 ) 【技術領域】 本發明係提供-種薄膜形成裝置及薄膜形成方法，乃將製 程氣體灌入處理室内，而使放置於處理室内的半導體晶圓 表面形成薄膜之薄膜形成裝置與薄膜形成方法。 【技術背景】 按，習知半導體製程均廣泛採用諸如成長矽磊裝置之類的 薄膜形成裝置。此種薄膜形成裝置，係將製程所使用之如 SiHU等氣體（以下簡稱為製程氣體）通入處理室内，使放 置於處理室内的半導體晶圓表面形成如Si等薄膜。惟，此 情況下，承載半導體晶圓之平台座的裸露部分或處理室内 壁部分將因上述製程氣體而產生si等附著之情形，所以在 進行下一薄膜形成處理之前，必須先將Si附著物清除。相 關清除附著物的技術，有如眾所周知的於處理室内通入含 HC1的清潔氣體，利用使HC1與Si進行反應後，而將該附著 物予以清除之方法。 【發明目的及概述】 .但是，在上述習知方法中，將產生如下的問題。若於 處理室内通入如HC1氣體等腐姑性氣體，此腐钱性氣體與 殘餘水份、氧氣等，將报容易對於供灌入腐蝕性氣體之腐 蝕性氣體供應管路（具體而言，指如配管、閥等内壁）造成 腐姑。一旦受到腐#’在進行下一次的薄膜形成處理時， 便形成造成污染的主因。而相關防止該種腐蝕的方法，雖 有將腐蝕性氣體供應管路内以氮氣、氫氣等進行吹氣之方 式，但因需要相當長的時間才能將所殘留的水份與氧氣等 <請先間讀背面之注意事堉再填寫本頁) -裝Announcement A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (1) [Technical Field] The present invention provides a thin film forming device and a thin film forming method, in which a process gas is poured into a processing chamber, so that A thin film forming apparatus and a thin film forming method for forming a thin film on the surface of a semiconductor wafer placed in a processing chamber. [Technical Background] According to the conventional semiconductor manufacturing processes, thin film forming devices such as growth silicon devices are widely used. Such a thin film forming device passes a gas such as SiHU (hereinafter referred to as a process gas) used in a manufacturing process into a processing chamber, and forms a thin film such as Si on a surface of a semiconductor wafer placed in the processing chamber. However, in this case, the exposed part of the platform base that carries the semiconductor wafer or the inner part of the processing chamber will be attached by si or the like due to the above process gas. Therefore, the Si must be attached before the next film formation process. Clear. As a well-known technique for removing attachments, there is a well-known method in which a cleaning gas containing HC1 is passed into a processing chamber, and HC1 and Si are reacted to remove the attachments. [Objective and Summary of the Invention] However, in the conventional method described above, the following problems arise. If a corrosive gas such as HC1 gas is passed into the processing chamber, this corrosive gas, residual water, oxygen, etc. will be reported to the corrosive gas supply pipeline (specifically, Refers to internal walls such as piping, valves, etc.) causing rotting. Once subjected to the rot # ', the main cause of contamination will be formed in the next film formation process. The related methods to prevent this kind of corrosion include blowing nitrogen or hydrogen in the corrosive gas supply pipeline, but it takes a long time to remove the remaining water and oxygen etc. (Read the notes on the back first, and then fill out this page)

'S'S

轉P 匚一 ΎΤ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -2-To P 匚 Ύ Τ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -2-

v<4 6 62 7 8 五、發明說明（ 徹底的清除 有鑒於斯，本發明為解決上述的問題，遂提供一種以 矩時間的處理便能減少廯蝕性氣體供應管路内污染的薄膜 形成裝置與薄臈形成方法。 緣是，為解決上述的課題，本發明所提供之薄膜形成 裝置係在將製程氣體通入處理室内，俾使放置在該處理室 内的半導體晶圓表面上形成薄膜之薄膜形成裝置中，包含 有腐敍性氣體供影管路與含；5夕化合物氣體供應構件。其 中，該腐蝕性氣體供影管路係將腐蝕性氣體供應於該處理 室内者。而該含矽化合物氣體供應構件係在透過該腐蝕性 氣體供應管路將該腐蝕性氣體通入該處理室内之前，先將 含矽化合物之含矽化合物氣體通入該腐蝕性氣體供應管路 者。 另外，為解決上述的課題，本發明所提供之薄膜形成 方法係將製程氣體通入處理室内，而使放置在該處理室内 的半導體晶圓表面形成薄膜之薄膜形成方法中，包含有腐 蝕性氣體供應步驟與含矽化合物氣體供應步驟。其中，該 腐姓性氣體供應步驟係將腐蚀性氣體供應於該處理室内 者 <'而該含矽化合物氣體供應步驟係於該腐蝕性氣體供應 步驟中，在將腐蝕性氣體供應於該處理室内之前，將含矽 化合物之含矽化合物氣體通入該腐蝕性氣體供應管路者。 將含矽化合物之含矽化合物氣體通入該腐蝕性氣體供 應官路之則，藉由將含矽化合物之含矽化合物氣體通入腐 蝕性氣體供應管路之方式，可於該腐餘性氣體供應管路内 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） — — — 111— - iI {請先閱讀背面之注意事項再填寫本頁) 訂· α: 經濟部智慧財產局員工消費合作社印製 -3 A7 B7v &4; 4 6 62 7 8 V. Description of the invention (Thorough removal of the contamination, in order to solve the above-mentioned problem, the present invention provides a thin-time treatment that can reduce the formation of thin films in the corrosive gas supply pipeline. Apparatus and method for forming thin film. The reason is that in order to solve the above-mentioned problem, the thin film forming device provided by the present invention is to pass a process gas into a processing chamber, and to form a thin film on the surface of a semiconductor wafer placed in the processing chamber. The film forming device includes a corrosive gas supply pipeline and a compound gas supply member. The corrosive gas supply pipeline supplies corrosive gas to the processing chamber. The silicon compound gas supply member is a person who passes a silicon compound-containing gas containing a silicon compound into the corrosive gas supply line before passing the corrosive gas into the processing chamber through the corrosive gas supply line. In order to solve the above-mentioned problems, the thin film forming method provided by the present invention is to pass a process gas into a processing chamber, The thin film forming method for forming a thin film on the surface of a bulk wafer includes a step of supplying a corrosive gas and a step of supplying a silicon-containing compound gas. The step of supplying a corrosive gas is to supply a corrosive gas into the processing chamber < ' The silicon-containing compound gas supply step is the corrosive gas supply step. Before the corrosive gas is supplied into the processing chamber, the silicon-compound-containing gas is passed into the corrosive gas supply pipeline. The silicon-containing compound-containing gas is passed into the corrosive gas supply official circuit. By passing the silicon-containing compound-containing silicon-containing compound gas into the corrosive gas supply pipeline, the corrosive gas can be removed. The size of this paper in the supply line is applicable to the Chinese National Standard (CNS) A4 (210 x 297 mm) — — — 111 —-iI {Please read the precautions on the back before filling this page) Order α: Ministry of Economic Affairs Wisdom Printed by the Property Agency Staff Consumer Cooperative-3 A7 B7

五、發明說明（3 ) 經濟部智慧財產局員工消費合作社印製 46627 8 壁形成Si〇2保護膜。如此一來，便能減少腐蝕性氣體供應 管路内壁受腐蝕所造成的污染。同時，利用含矽化合物氣 體通入腐蝕性氣體供應管路之較簡易程序，便可防止腐钱 性氣體供應管路内壁的腐蚀，而達可在短時間内完·成減少 污染處理程序之功效者。 【圖式簡單說明】 第1圖係形成薄膜裝置的結構圖。 第2圖係處理室的結構圖。 【囷示符號說明】 10 矽磊成長裝置 12 處理室構件 14 真空幫浦 16 氣體供應構件 32 HC1氣體供應管路 34 SiH4氣體供應管路 36 控制構件 38 加熱構件 40 閥 42 金屬製配管 44 閥 46 MFC質量流量控制器 48 閥 50 壓力計 52 調節器 54 閥 56 金屬製配管 58 閥 60 MFC質量流量控制器 62 閥 64 壓力計 66 調節器 68 閥 110 氣體處理設備 112 HC1氣筒 114 SiH4氣筒 12 處理室構件 18 處理室 20 晶圓支撐構件 22 平台座 本紙張尺度適用中國國家標準（CNS〉A4規格（210 X 297公釐） _ 46 627 8 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明（） 24 支撐移轉架 26 28 供氣孔 30 32 HC1氣體供應管路. 1〇〇 【發明實施較佳態樣】 參照形成薄膜裝置的圖面來說明這項發明的實施方式 與裝置。相關本實施態樣的薄膜形成裝置係為一種於半導 體晶圓表面成長Si單晶薄膜的矽磊成長裝置。首先，針對 本實施態樣的矽磊成長裝置之結構進行說明。第丨圖為相關 本實施態樣矽磊成長裝置的結構圖。 如第1圖所示，相關本實施態樣的矽磊成長裝置i 〇是由 處理室構件12、真空幫浦14與氣體供應構件16等元件所構 成。以下，針對各構成元件，做進一步的說明。第2圖為處 理室構件12的結構圖。如第2圖所示，處理室構件12内有一 個由石英玻璃"構成的處理室18，在其内部是由半導體晶圓 100,與承載半導體晶圓的晶圓支撐構件所構成。 晶圓支撐構件20由下列各構造所組成：承載半導體 圓100的圓盤狀平台座22、平台座22的下方為以三作用點 撐的支撐移轉架24、能使承載半導體晶圓1〇〇之平台座。 進打上下移動的升降架26 〇藉由升降架26與搬送晶圓的 械手臂（未圖示）之間的㈣動作，將半導體晶圓1〇〇放置 平台座22上，同時’也可以將半導體晶圓1〇〇從平台座η 上搬離。 半導體晶圓100表面上成長Si單晶薄膜所需的製程〜 體（例如SiH4氣體、SiH2Cl2氣體、SiHci3氣體）、攜行氣細 升降架 排氣孔 半導體晶圓 晶 支 機 於 氣 ‘紙張尺度適用中闕家標準（CNS)A4規格（210 X 297公£ -5 f靖先閱讀背面之生意事項再填窝本頁)V. Description of the invention (3) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 46627 8 Si02 protective film is formed on the wall. In this way, the pollution caused by corrosion of the inner wall of the corrosive gas supply pipeline can be reduced. At the same time, by using a simpler procedure for introducing silicon-containing compound gas into the corrosive gas supply pipeline, the corrosion of the inner wall of the corrosive gas supply pipeline can be prevented, and the effect of reducing the pollution treatment process can be achieved in a short time. By. [Brief description of the drawings] FIG. 1 is a structural diagram of a thin film forming device. Figure 2 is a structural diagram of a processing chamber. [Symbol description] 10 Silicon growth device 12 Processing chamber member 14 Vacuum pump 16 Gas supply member 32 HC1 gas supply line 34 SiH4 gas supply line 36 Control member 38 Heating member 40 Valve 42 Metal pipe 44 Valve 46 MFC mass flow controller 48 valve 50 pressure gauge 52 regulator 54 valve 56 metal piping 58 valve 60 MFC mass flow controller 62 valve 64 pressure gauge 66 regulator 68 valve 110 gas processing equipment 112 HC1 gas cylinder 114 SiH4 gas cylinder 12 processing chamber Component 18 Processing chamber 20 Wafer support member 22 Platform base This paper size applies to Chinese national standards (CNS> A4 specification (210 X 297 mm) _ 46 627 8 A7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs () 24 support transfer racks 26 28 air supply holes 30 32 HC1 gas supply pipeline. 100 [the preferred embodiment of the invention] The embodiment and device of the invention will be described with reference to the drawing of a thin film device. The embodiment of the thin film formation device is a silicon growth device that grows a Si single crystal thin film on the surface of a semiconductor wafer. First, The structure of the Si Lei growing device of this embodiment will be described. Figure 丨 is a structural diagram of the related Si Lei growing device of this embodiment. As shown in Figure 1, the related Si Lei growing device of this embodiment i 〇 is composed of the processing chamber member 12, the vacuum pump 14, and the gas supply member 16. The following is a detailed description of each constituent element. Figure 2 is a structural diagram of the processing chamber member 12. As shown in Figure 2 As shown, the processing chamber member 12 has a processing chamber 18 made of quartz glass, and is composed of a semiconductor wafer 100 and a wafer support member that carries the semiconductor wafer. The wafer support member 20 is composed of The following structures are composed of a disc-shaped platform base 22 for carrying a semiconductor circle 100, and a lower part of the platform base 22 is a support transfer frame 24 supported by three action points, and a platform base capable of carrying 100 semiconductor wafers. The lifting rack 26 that moves up and down 〇 The semiconductor wafer 100 is placed on the platform base 22 by the movement between the lifting rack 26 and a robot arm (not shown) for transferring wafers, and at the same time, the semiconductor Wafer 1〇〇 Move away from the platform base η. Process required to grow Si single crystal thin film on the surface of semiconductor wafer 100 ~ body (such as SiH4 gas, SiH2Cl2 gas, SiHci3 gas), portable gas lifter exhaust hole, semiconductor wafer crystal branch Machine-to-air 'paper size applies CNS A4 specifications (210 X 297 Kg--5 f Jing first read the business matters on the back before filling in this page)

4 6 62 7 8 A7 B7 五、發明說明（5) 如H2氣體）由處理室18側面通入。同時，將上述清潔氣體（例 如HC1氣體）通入處理室18内部，用以去除處理室is内部所 附著的含矽聚合物等附薯物。於處理室18的側面，清潔氣 體以層流的方式從氣體供應構件16經由供氣孔28進入處理 室18内部。同時，為了降低處理室18内部的壓力，在處理 室18的另一侧，即在上述供氣孔28的相反位置有一排氣孔 30 〇 另外，為了加熱在處理室18内部所放置的半導體晶圓 100’分別在處理室18的上方與下方各裝配2〇支的鹵素燈32 用以加熱處理室18。鹵素燈32可以將半導體晶圓1〇〇加熱至 500〜1200°C。 如第1圖所示，處理室18的排氣孔30與真空幫浦14相連 接。驅動此真空幫浦14，便能使處理室18減壓。同時，真 空幫浦14與外界的氣體處理設備1相連接。被真空幫浦1 * 所吸入氣體’經由氣體處理設備11〇處理過後，排放至大氣 中。 氣體供應構件16由下列各結構所組成：供應處理室i 8 製程氣體的製程氣體供應管路（未圖示）、通入處理室18内 部含HC1氣體之清潔氣體（以下簡稱為HC丨氣體）的HC1氣體 供應管路32、於HC1氣體供應管路32中通入含矽化合物之 SiH4氣體（以下簡稱為siH4氣體）的sm4氣體供應管路34、加 熱HC1氣體供應管路32的加熱構件38、控制HCi氣體供應管 路32與Sil·^氣體供應管路34内HC1氣體與SiH4氣體之個別 流1及上述製程氣體流量的流量控制構件36 (含化合物 本紙張尺錢肖巾關家標準(咖)^格<210 χ 297公釐） I H 1 ϋ n a I n i靖先閱婧背面之注意事項再填寫本頁)4 6 62 7 8 A7 B7 V. Description of the invention (5) (such as H2 gas) from the side of the processing chamber 18. At the same time, the above-mentioned clean gas (for example, HC1 gas) is passed into the processing chamber 18 to remove the attached potato and other silicon-containing polymers attached to the processing chamber is. On the side of the processing chamber 18, the cleaning gas enters the inside of the processing chamber 18 from the gas supply member 16 through the gas supply hole 28 in a laminar flow manner. At the same time, in order to reduce the pressure inside the processing chamber 18, there is an exhaust hole 30 on the other side of the processing chamber 18, that is, opposite to the above-mentioned air supply hole 28. In addition, in order to heat the semiconductor wafer placed inside the processing chamber 18 At 100 ′, 20 halogen lamps 32 are respectively installed above and below the processing chamber 18 to heat the processing chamber 18. The halogen lamp 32 can heat the semiconductor wafer 100 to 500 to 1200 ° C. As shown in Fig. 1, the exhaust hole 30 of the processing chamber 18 is connected to the vacuum pump 14. When the vacuum pump 14 is driven, the processing chamber 18 can be decompressed. At the same time, the vacuum pump 14 is connected to the outside gas processing equipment 1. The gas inhaled by the vacuum pump 1 * is processed by the gas processing equipment 110 and discharged to the atmosphere. The gas supply member 16 is composed of the following structures: a process gas supply line (not shown) for supplying the process chamber i 8 process gas, and a clean gas containing HC1 gas (hereinafter referred to as HC 丨 gas) that enters the processing chamber 18 HC1 gas supply line 32, sm4 gas supply line 34 through which SiH4 gas containing silicon compounds (hereinafter referred to as siH4 gas) is passed into HC1 gas supply line 32, and heating means 38 for heating the HC1 gas supply line 32 2. The flow control member 36 which controls the individual flow 1 of HC1 gas and SiH4 gas in the HCi gas supply pipeline 32 and the Sil · ^ gas supply pipeline 34 and the above-mentioned process gas flow rate (Cafe) ^ Grid < 210 χ 297 mm) IH 1 ϋ na I ni (Please read the notes on the back of Jing before filling out this page)

HP 經濟部智慧財產局員工消費合作社印製 4 6 62 7 8 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（6) 氣體的供應方式）。在氣體供應構件16與處理室1.8的供氣 孔28之間裝設閥40。而HC1氣體供應管路32與SiH4氣體供 應管路34於閥40的上源（與處理室18相反位置）相連接。另 外’上述製程氣體、HC1氣體與攜行氣體混合後通入處理 室18内部。 HC1氣體供應管路32主要由金屬製配管42構成，其分 別與外界所裝設的HC1氣筒112和閥40相連接。同時，HC1 氣體供應管路32的下源（閥40以後），依序裝設閥44、質量 流量控制器（以下簡稱為MFC)46、閥48、壓力計50、調節 器52。在靠近HC1氣筒112處裝設閥54。 SiH4氣體供應管路34主要由金屬製配管56構成，其分 別與外界所裝設的SiH4氣筒114和閥40相連接。同時，siH4 氣體供應管路34的下源（閥40以下），依序裝設閥58、 MFC60、閥62、壓力計64、調節器66與閥68。 控制構件3 6參照由HC1氣體供應管路32裝設的壓力計 50所測出的壓力值’來控制閥44、閥48、閥54之開關、MFC46 的流量設定值、調節器52内閥所開的大小。以如此方式控 制HC1氣體供應管路32的HC1氣體流量。同時，控制構件36 參照由SilLv氣體供應管路34裝設的壓力計64所測出的壓力 值，來分別控制閥58、閥62、閥68之開關、MFC60的流量 設定值、調節器66内閥所開的大小。以如此方式控制μ% 氣體供應管路34的SiH4氣體流量。控制構件36也控制流向 製程氣體供應管路的製程氣體流量（未圖示）。另外，控制 閥4 0的開關也控制通入處理室1 8的氣體種類（製程氣體 '清 I I I ! --I (請先閱讀背面之注意事項再填寫本頁) C. 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 46627 8 A7 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明（7 ) 潔氣體）。 HC1氣體供應管路32的HC1氣體於通入處理室18内部 之前，控制構件36控制於HC1氣體供應管路32上所裝閥44 的開關。同樣地，於HC1氣體供應管路32通入SiH4氣體時， 控制構件36控制於SiH4氣體供應管路34上所裝閥58的開 關。而具體的控制順序則敘述如后。 加熱構件38加熱HC1氣體供應管路32。更詳細的敘 述’加熱構件38於HC1氣體供應管路32通入SiH4氣體時， 加熱HC1氣體供應管路32。 接著，HC1氣體供應管路32的HC1氣體於通入處理室18 内部之前，針對HCI氣體供應管路32通入SiH4氣體的具體 控制順序’與實施方式與裝置有關的形成薄膜方法也一併 加以說明。於進行控制時，先將SiH4氣體供應管路34上的 閥58關閉，再將閥62與閥68打開。於是，siH4氣體供應管 路34上閥58之上源已預先充滿了 SiH4氣體。 接著’將HC1氣體供應管路32的閥54關閉，再將調節 器52閥全開，閥44、閥48、閥40分別打開，且將MFC46的 流量設定值設定為最大，以真空幫浦14進行處理室18與 HC1氣體供應管路32内部的真空排氣。 當HC1氣體供應管路32上的壓力計5〇的指示值已非常 接近真空狀態時，將閥40關閉。然後，將SiH4氣體供應管 路34上的閥58打開，同時也將MFC60的流量值設定為固定 流量。如此一來，從SiH4氣體供應管路34到HC1氣體供應 管路32之閥54的下源（與HC1氣筒112相反位置）已通入了 — 1 — — — — — — ^ 、裝 * — I (請先閲讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 62 7 8 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (6) Gas supply method). A valve 40 is installed between the gas supply member 16 and the gas supply hole 28 of the processing chamber 1.8. The HC1 gas supply line 32 and the SiH4 gas supply line 34 are connected to the upper source of the valve 40 (opposite to the processing chamber 18). In addition, the above-mentioned process gas, HC1 gas, and the carrier gas are mixed and passed into the processing chamber 18. The HC1 gas supply line 32 is mainly composed of a metal pipe 42 and is connected to the HC1 gas cylinder 112 and the valve 40 installed outside, respectively. At the same time, the lower source (after valve 40) of the HC1 gas supply line 32 is provided with a valve 44, a mass flow controller (hereinafter referred to as MFC) 46, a valve 48, a pressure gauge 50, and a regulator 52 in this order. A valve 54 is installed near the HC1 cylinder 112. The SiH4 gas supply line 34 is mainly composed of a metal pipe 56 and is connected to a SiH4 gas cylinder 114 and a valve 40 installed outside, respectively. At the same time, the lower source (below the valve 40) of the siH4 gas supply line 34 is provided with a valve 58, an MFC60, a valve 62, a pressure gauge 64, a regulator 66, and a valve 68 in this order. The control member 36 refers to the pressure value 'measured by the pressure gauge 50 installed in the HC1 gas supply line 32 to control the switches of the valve 44, the valve 48, the valve 54, the flow setting value of the MFC 46, and the valve position in the regulator 52. Open size. The HC1 gas flow rate of the HC1 gas supply line 32 is controlled in this manner. At the same time, the control member 36 refers to the pressure values measured by the pressure gauge 64 installed in the SilLv gas supply line 34 to control the switches of the valve 58, valve 62, valve 68, the flow setting value of the MFC 60, and the regulator 66, respectively. The size of the valve. In this way, the SiH4 gas flow rate of the μ% gas supply line 34 is controlled. The control member 36 also controls a process gas flow rate (not shown) flowing to the process gas supply line. In addition, the switch of the control valve 40 also controls the type of gas entering the processing chamber 18 (process gas' Qing III! --I (Please read the precautions on the back before filling this page). C. This paper size is applicable to China Standard (CNS) A4 specification (210 X 297 mm) 46627 8 A7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 V. Description of the invention (7) Clean gas). Before the HC1 gas of the HC1 gas supply line 32 passes into the processing chamber 18, the control member 36 controls the opening and closing of the valve 44 mounted on the HC1 gas supply line 32. Similarly, when SiH4 gas is passed into the HC1 gas supply line 32, the control member 36 controls the opening and closing of the valve 58 installed in the SiH4 gas supply line 34. The specific control sequence is described later. The heating member 38 heats the HC1 gas supply line 32. A more detailed description is that the heating member 38 heats the HC1 gas supply pipe 32 when SiH4 gas is passed through the HC1 gas supply pipe 32. Next, before the HC1 gas of the HC1 gas supply pipe 32 passes into the processing chamber 18, the specific control sequence for the SiCI of the HCI gas supply pipe 32 to be passed into the thin film is formed together with the method for forming a thin film according to the embodiment and the device. Instructions. In the control, the valve 58 on the SiH4 gas supply line 34 is closed, and then the valve 62 and the valve 68 are opened. Thus, the source above the valve 58 on the siH4 gas supply pipe 34 has been previously filled with SiH4 gas. Then 'close the valve 54 of the HC1 gas supply line 32, and then fully open the regulator 52 valve, the valve 44, the valve 48, and the valve 40 are opened, and set the flow setting value of the MFC 46 to the maximum. Vacuum evacuation inside the processing chamber 18 and the HC1 gas supply line 32. When the indicated value of the pressure gauge 50 on the HC1 gas supply line 32 is very close to the vacuum state, the valve 40 is closed. Then, the valve 58 on the SiH4 gas supply pipe 34 is opened, and the flow rate of the MFC 60 is also set to a fixed flow rate. In this way, the lower source (opposite the HC1 gas cylinder 112) of the valve 54 from the SiH4 gas supply line 34 to the HC1 gas supply line 32 has been opened — 1 — — — — — — ^, equipment * — I (Please read the notes on the back before filling this page)

I 訂··I order ...

4 6 62 7 84 6 62 7 8

經濟部智慧財產局員工消費合作社印製 S1H4氣體。此時’以加熱構件38加熱hci氣體供應管路32。 當HC1氣體供應管路32上的壓力計50的指示值幾近與 SiEU氣體供應管路34上的壓力計64的指示值相等時，將 S1H4氣體供應管路34上的閥58和閥62關閉，並將mfc60的 流量設定為0。 接著’打開閥40，以真空幫浦14進行處理室18與HC1 氣體供應營路32内部的真空排氣。 當HC1氣體供應管路32上的壓力計5〇的指示值已非常 接近真空狀態時’將調節器52内閥全關。之後，打開閥54， 然後再調節調節器52内閥開的大小。HC1氣體供應管路32 内所殘留的SiH4氣體應該已經被完全清除。必要的話，重 覆地開關閥54進行吹氣。然後，關閉HC1氣體供應管路32 上的閥44與閥48 ’並將MFC46的流量值設定為〇。上述一連 串的處理結束後，通入清潔氣體之HC1氣體通過氣體供 應管路32，進入處理室18。另外，於每次供應清潔氣體之 HCI氣體進入處理室18之前，最好都能進行上述一連串的 處理，而清潔氣體之HC1氣體也可分數次通入處理室“内 部0 接著，針對本實施方式與裝置之矽磊成長裝置的作用 與效果進行說明。HC1氣體經由HC1氣體供應管路32於進入 處理室丨8内部之前，將SiH4氣體通入HC1氣體供應管路 32。於是，本實施方式與裝置之矽磊成長裝置⑺能使 氣體供應管路32的管壁内形成Si〇2保護臈。因此，將清潔 氣體之HCI氣體通入HC1氣體供應管路32時，防止了 hci氣The S1H4 gas is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. At this time ', the hci gas supply line 32 is heated by the heating member 38. When the indicated value of the pressure gauge 50 on the HC1 gas supply line 32 is nearly equal to the indicated value of the pressure gauge 64 on the SiEU gas supply line 34, close the valve 58 and valve 62 on the S1H4 gas supply line 34 And set the mfc60 flow to 0. Next, 'the valve 40 is opened, and the vacuum chamber 14 is used to evacuate the inside of the processing chamber 18 and the HC1 gas supply channel 32. When the indicated value of the pressure gauge 50 on the HC1 gas supply line 32 is very close to the vacuum state ', the valve in the regulator 52 is fully closed. After that, the valve 54 is opened, and then the size of the valve opening in the regulator 52 is adjusted. The SiH4 gas remaining in the HC1 gas supply line 32 should have been completely removed. If necessary, the valve 54 is repeatedly opened and closed for blowing. Then, the valves 44 and 48 'on the HC1 gas supply line 32 are closed and the flow rate of the MFC 46 is set to zero. After the above-mentioned series of processes are completed, the HC1 gas, which is passed into the clean gas, passes through the gas supply pipe 32 and enters the processing chamber 18. In addition, before the HCI gas supplied with the cleaning gas enters the processing chamber 18, it is better to perform the above-mentioned series of processing, and the HC1 gas of the cleaning gas may be passed into the processing chamber "internal 0" in several times. Next, for this embodiment, The function and effect of the Si Lei growth device with the device will be described. Before HC1 gas enters the processing chamber through the HC1 gas supply line 32, SiH4 gas is passed into the HC1 gas supply line 32. Therefore, this embodiment and The silicon growth device of the device can prevent the formation of Si02 in the pipe wall of the gas supply pipe 32. Therefore, when the HCI gas of the clean gas is passed into the HC1 gas supply pipe 32, the hci gas is prevented

本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公釐） •---------— .1 --- (請先閱讀背面之注意事項再填寫本頁) I. *15' .. β 4 6 6278 A7 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明（9 ) 體供應管路32管壁内之腐蚀。同時，於半導體晶圓1⑻上形 成薄膜之際’能減少源自HCI氣體供應管路32的污染。而 於HCI氣體供應管路32管壁内所形成保護膜之厚度，可藉 由SiH4氣體供應量或加熱量等改變來進行適當的設計。為 了食b有效地防止HC1氣體供應管路32管壁内之腐融，保護 膜之厚度最好達到lOOnm以上》以氮氣、氫氣等進行吹氣 方法之上述傳統技術，常因管路洩漏等原因而無法防止水 份或氧氣之參入’造成將來HC1氣體供應管路32的腐|虫。 惫以本實施方式與裝置之>5夕蟲成長裝置1〇便能防止腐飯的 發生。 為了減少污染’傳統技術僅以氮氣、氫氣等進行吹氣 處理’將水份或氧氣完全去除。相較之下，本實施方式與 裝置之矽磊成長裝置10，利用SiH4氣體供應HC1氣體供應 管路32的簡易製程’在極短的時間内便能使上述的hc丨氣 體供應管路32的管壁内形成SiCb保護膜而能減少污染。 同時’本實施態樣之矽磊成長裝置10，藉由加熱構件 3 8將HCI氣體供應管路32加熱，可以加速上述保護膜之形 成。 上述本實施態樣之砂遙成長裝置10，適用於這項發明 之h浪氣體HC1氣體通入HC1氣體供應管路32。其他的腐触 性氣體，例如SiH2CI2、SiHCl3、SiCl4等製程氣體的供應管 路也可適用。 同時，上述本實施態樣之石夕蟲成長裝置1〇，適用於 氣體通入HC1氣體供應管路32。其他含矽化合物的氣體， 本紙張尺度適用中國國家標準（CNS)^·格（210 X 297公釐） --- - ------111 !. I --- /!\ - (請先閲讀背面之注意事項再填寫本頁) 訂： 4 6 627 8 A7 ---------B7 五、發明說明（) 例如Si#6、Si3H8等也可適用。 雖然上述實施態樣中係以矽磊成長裝置為例進行的說 明’惟本發明也適用於PVD裝置、CVD裝置等其他的形成 薄膜裝置。 【產業上可利用性】 本發明所提供之薄膜形成裝置與薄臈形成方法均可 以利用在半導體製程中。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 41 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐〉This paper size applies to China National Standard (CNS) A4 (21 × 297 mm) • ---------— .1 --- (Please read the precautions on the back before filling this page) I * 15 '.. β 4 6 6278 A7 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 V. Description of the invention (9) Corrosion in the pipe wall of the body supply pipe 32. At the same time, when a thin film is formed on the semiconductor wafer 1 ', contamination originating from the HCI gas supply line 32 can be reduced. The thickness of the protective film formed in the wall of the HCI gas supply pipe 32 can be appropriately designed by changing the amount of SiH4 gas supply or heating. In order to effectively prevent corrosion in the wall of the HC1 gas supply pipe 32, the thickness of the protective film should preferably be above 100 nm. The above-mentioned traditional technology of blowing with nitrogen, hydrogen, etc. is often caused by pipeline leaks and other reasons. It is impossible to prevent the entry of water or oxygen to cause the rot of the HC1 gas supply pipe 32 in the future. Exhaustion With this embodiment and the device > 5, the night worm growth device 10 can prevent the occurrence of rotten rice. In order to reduce pollution, the traditional technology only uses nitrogen, hydrogen, etc. to blow air to remove water or oxygen completely. In comparison, the silicon growth device 10 of this embodiment and the device uses the simple process of SiH4 gas supply HC1 gas supply line 32 to enable the above-mentioned hc 丨 gas supply line 32 in a very short time. A SiCb protective film is formed in the tube wall to reduce pollution. At the same time, the silicon-silicon growth device 10 of this embodiment can accelerate the formation of the protective film by heating the HCI gas supply pipe 32 by the heating member 38. The above-mentioned sand remote growth device 10 according to this embodiment is suitable for passing the h-wave gas HC1 gas into the HC1 gas supply pipe 32 of the present invention. Other corrosive gas, such as SiH2CI2, SiHCl3, SiCl4 and other process gas supply lines can also be applied. At the same time, the stone worm growth device 10 of the embodiment described above is suitable for the gas supply line 32 for the gas inlet HC1. For other gases containing silicon compounds, the size of this paper applies to the Chinese National Standard (CNS) ^ · (210 X 297 mm) ---------- 111!. I --- /! \-(Please Read the notes on the back before filling this page) Order: 4 6 627 8 A7 --------- B7 V. Description of the invention () For example, Si # 6, Si3H8, etc. are also applicable. Although the above embodiment is described by using a silicon growth device as an example ', the present invention is also applicable to other thin film forming devices such as a PVD device and a CVD device. [Industrial Applicability] Both the thin film forming apparatus and the thin film forming method provided by the present invention can be used in a semiconductor process. (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 41-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

4_£_S2~7-B. 告本^、申請專利範圍 AS B8 08 D8 1.一種薄膜形成裝置，係將製程氣體灌入處理室内部，而 在放置於該處理室内部之半導體晶圓表面形成薄膜的 形成薄膜裝置，其特徵在於包含有： 、 將腐韻性氣體供應於該處理室内的腐餘性氣體供 給管路；與 在透過該腐㈣氣體供給管路，㈣腐純 入該處理室内部之前，將含矽卟人此 ^ 將含矽化合物之含矽化合物氣體 供給於該腐餘性氣體供給管路的切化合物氣體 手段。 2. 如申請專利範圍第【項所述之薄膜形成裝置，更進一步， 具備有加熱該腐蝕性氣體供應管路的加熱手段者。 3. 如申請專利範圍第！項所述之薄膜形成裝置，其中該㈣ =氣體係藉由將該製程氣體灌人該處理室内部，而將附 著於該處理室内部之附著物清除的清潔氣體者。 4_如申請專利範圍第3項所述之薄膜形成裝置，其中該清潔 氣體係含HC1的氣體者。 5. 如申請專利範圍第丨項所述之薄膜形成裝置，其中，該含 石夕化合物氣體係含SiH4的氣體者。 6. —種薄膜形成方法，係將製程氣體灌入處理室内部’而 在放置於該處理室内部之半導體晶圓表面形成薄膜的 (請-閲讀背面之注咅？事項再填寫本頁) ' ----- I 訂 -------- 暧齊"皆讓讨篆 12- 4 6 62 7 8 as C84_ £ _S2 ~ 7-B. Notice ^, patent application scope AS B8 08 D8 1. A thin film forming device which injects process gas into the interior of a processing chamber and forms it on the surface of a semiconductor wafer placed inside the processing chamber. The thin film forming film device is characterized by comprising: a residual gas supply pipeline for supplying a corrosive gas into the processing chamber; and a radon purely entering the processing chamber through the corrosive gas supply pipeline. Before the inside, the silicon-containing porphyrin is used to supply the silicon-containing compound-containing silicon-containing compound gas to the residual gas supply pipe to cut the compound gas. 2. The thin-film forming apparatus described in item [Scope of the application for patent], further comprising a heating means for heating the corrosive gas supply pipeline. 3. If the scope of patent application is the first! The thin film forming device according to the item, wherein the ㈣ gas system is a clean gas which removes the attachments attached to the interior of the processing chamber by filling the process gas into the interior of the processing chamber. 4_ The thin film forming device according to item 3 of the scope of patent application, wherein the clean gas system contains HC1 gas. 5. The thin film forming device as described in item 丨 of the patent application scope, wherein the gas-containing compound gas system contains SiH4 gas. 6. —A method for forming a thin film, in which a process gas is poured into the inside of a processing chamber, and a thin film is formed on the surface of a semiconductor wafer placed inside the processing chamber (please-read the note on the back? Matters and then fill out this page) ' ----- I order -------- 暧 齐 " All let's discuss 12- 4 6 62 7 8 as C8 形成薄膜方法，包含有： 透過腐辞性氣體供應管路將腐蝕性氣體灌 _ 八該處 理至内部之供應腐蝕性氣體步驟;.與 於該供應腐蝕性氣體步驟中，在將該腐蝕性氣體灌 入該處理室内部之前，將含矽化合物之含矽化合物氣體 灌入該腐蝕性氣體供應管路内之含矽化合物氡體$應 7. 如申請專利範圍第6項所述之薄膜形成方法，其中，於該 含矽化合物氣體供應步驟中，更進—步包含有當在將= ‘含矽化合物氣體灌入該腐蝕性氣體供應管路時:將該: 敍性氣體供應管路進行加熱的加熱步驟。 8. 如申請專利範圍第6項所述之薄膜形成方法，其中該腐蝕 性氣體係藉由將該製程氣體灌入該處理室内 — 邱，而將附 者於該處理室内部之附著物清除的清潔氣體者。 9. 如申請專利範圍第8項所述之薄獏形成方法，其中該清潔 匯 齊 § 氣體係含HC丨的氣體者=> ' 10. 如申請專利範園第6項所述之薄膜形成方法，其中該含 矽化合物氣體係含SiH4的氣體者。A method for forming a thin film includes: filling a corrosive gas through a corrosive gas supply pipeline. Eight steps of supplying corrosive gas to the inside; and in the step of supplying corrosive gas, the corrosive gas is supplied. Prior to filling the inside of the processing chamber, the silicon compound containing silicon compound gas is filled into the silicon compound containing carcass in the corrosive gas supply pipeline. 7. The thin film forming method as described in item 6 of the scope of patent application Wherein, in the step of supplying the silicon-containing compound gas, the step further includes: when the silicon-containing compound gas is poured into the corrosive gas supply pipeline: heating the narrative gas supply pipeline Heating step. 8. The method for forming a thin film according to item 6 of the scope of the patent application, wherein the corrosive gas system removes the attachments attached to the interior of the processing chamber by filling the process gas into the processing chamber-Qiu. Cleaner. 9. The thin film formation method as described in item 8 of the scope of the patent application, wherein the clean sink § gas system containing HC 丨 gas => '10. Thin film formation as described in item 6 of the patent application park Method, wherein the silicon-containing compound gas system contains SiH4 gas.
TW89122600A 1999-10-29 2000-10-26 Method and apparatus for thin film deposition TW466278B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30967899A JP2001135576A (en) 1999-10-29 1999-10-29 System and method for forming thin film

Publications (1)

Publication Number Publication Date
TW466278B true TW466278B (en) 2001-12-01

Family

ID=17995969

Family Applications (1)

Application Number Title Priority Date Filing Date
TW89122600A TW466278B (en) 1999-10-29 2000-10-26 Method and apparatus for thin film deposition

Country Status (3)

Country Link
JP (1) JP2001135576A (en)
TW (1) TW466278B (en)
WO (1) WO2001033616A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60120278T8 (en) * 2000-06-21 2007-09-06 Tokyo Electron Ltd. Heat treatment plant and method for its purification
JP3885692B2 (en) 2002-08-28 2007-02-21 信越半導体株式会社 Manufacturing method of silicon epitaxial wafer
JP5047223B2 (en) * 2005-03-04 2012-10-10 株式会社ニューフレアテクノロジー Method for avoiding gas mixing in vapor phase growth apparatus
JP4355321B2 (en) 2005-03-04 2009-10-28 株式会社ニューフレアテクノロジー Vapor growth equipment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06101044A (en) * 1992-09-21 1994-04-12 Nippon Sanso Kk Method for plating inner face of pipeline
JPH0774104A (en) * 1993-08-31 1995-03-17 Sony Corp Reaction chamber
JP3333020B2 (en) * 1993-10-29 2002-10-07 東京エレクトロン株式会社 Processing method and processing apparatus
JP2000058456A (en) * 1998-08-07 2000-02-25 Mitsubishi Materials Silicon Corp Manufacture equipment of epitaxial wafer

Also Published As

Publication number Publication date
JP2001135576A (en) 2001-05-18
WO2001033616A1 (en) 2001-05-10

Similar Documents

Publication Publication Date Title
JP3386651B2 (en) Semiconductor device manufacturing method and semiconductor manufacturing apparatus
US5119541A (en) Wafer succeptor apparatus
JP3403181B2 (en) Heat treatment apparatus and heat treatment method
JP5393895B2 (en) Semiconductor device manufacturing method and substrate processing apparatus
US20120214317A1 (en) Substrate processing apparatus and method, and semiconductor device manufacturing method
US5254176A (en) Method of cleaning a process tube
JP5848832B2 (en) Substrate processing apparatus including a heat shield plate
TW201225159A (en) Method of manufacturing semiconductor device and substrate processing apparatus
TW466278B (en) Method and apparatus for thin film deposition
JP2006302946A (en) Substrate processing system
TW201133560A (en) Method of manufacturing semiconductor device and substrate processing apparatus
JP6820793B2 (en) Substrate processing equipment, exhaust pipe coating method and substrate processing method
JP2002115064A (en) Method for cleaning cvd system for graphite nanofiber thin film deposition
US20200230666A1 (en) Cleaning Method of Substrate Processing Apparatus and Substrate Processing Apparatus
TW589398B (en) Filtering technique for CVD chamber process gases and the same apparatus
JPH09199424A (en) Epitaxial growth
JP3374256B2 (en) Heat treatment apparatus and cleaning method thereof
JPH09246257A (en) Semiconductor manufacturing device and gas exhausting method
JPH0289313A (en) Cleaning nethod for silicon substrate surface
JP3690095B2 (en) Deposition method
JPH0623566Y2 (en) Semiconductor manufacturing equipment
JPH08195332A (en) Exhausting apparatus for semiconductor manufacturing system
JPH118226A (en) Cleaning of semiconductor substrate surface and apparatus therefor
TWI276481B (en) Method of decreasing particle in a furnace and method of operating the furnace
JPS6290921A (en) Method for epitaxial growth

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees