TW463391B - Photoelectric conversion functional element and production method thereof - Google Patents

Abstract

The present invention is a photoelectric conversion functional element which uses a compound semiconductor crystal substrate consisting of group 12 (2B) elements and group 16 (6B) elements in the periodic table, wherein a substrate low in dislocation density and deposition density is used, elements for forming the substrate of a first conduction type into one of a second conduction type are thermally diffused from the substrate surface to thereby form pn junctions, and electrodes are formed on the front and rear surfaces of the substrate. In addition, a diffusion source containing elements used for said first conduction type-to-second conduction type conversion of said substrate is disposed on the front surface of said substrate to prevent formation of deficiencies for compensating for an impurity level formed by the elements in said substrate during a diffusion process and getter the impurities on the front surface of the substrate by means of said diffusion source. Accordingly, a conduction type of a II-VI compound semiconductor can be controlled to permit a stable production of photoelectric conversion functional elements excellent in luminous characteristics.

Description

463391 A7 B7 V. Description of the invention (1) [Technical Field] (Please read the precautions on the back before filling in this page) The present invention is about the use of Group 1 2 (2 B) elements and Period 1 of the periodic table (6 B) Photoelectric conversion functional elements such as LED (light-emitting diode) or LD (semiconductor laser) made of a compound semiconductor crystal substrate formed of a group element and a technology applicable to the manufacturing method thereof. [Background Art] In addition to CdTe (cadmium telluride), compound semiconductors formed from Group 12 (2B) elements and Group 16 (6B) elements of the periodic table (hereinafter referred to as Π—VI compound semiconductors) are generally The p-type and η-type conductivity types are difficult to freely control, so there are very few photoelectric conversion functional elements and their manufacturing methods that are practically used with such materials, and are limited to a limited range. For example, it is a method of manufacturing a light-emitting diode of a photoelectric conversion element using a Z n S e-based material, and using molecular wire epitaxial growth to form several layers of Z n S e-based mixed crystals on a GaAs substrate. A thin film was then formed into an electrode to produce a ρ η junction light-emitting diode. When printing and manufacturing this light-emitting diode by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the Zee material has difficulty in controlling the P-type semiconductor under thermal equilibrium, so it uses a characteristic device called an overexcitation particle beam source. An epitaxial growth method other than a thermal equilibrium state is used to form a mixed crystal thin film.

For example, a blue L E D of 480 nm is tried as a photoelectric conversion function element using this Z n Se system material. In addition, CdZnS e_ZnS e quantum well area structure is used to make blue LED. The paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) -4- 463391 A7--B7 V. Description of the invention (2) It has been reported that blue devices have been emphasized. (Please read the precautions on the back before filling in this page) However, as mentioned above, if the photoelectric conversion function element of the Π-VI compound semiconductor is used, the physical properties and materials that are difficult to control the conductivity of the Π-VI compound semiconductor are prevented. The system is extremely limited. Except for the aforementioned materials of the zn S e series, the photoelectric conversion function element 使用 using a Π-VI compound semiconductor has not been put into practical use. In order to make the photoelectric conversion functional element using Z n S e-based material controllable conductivity type, an epitaxial growth method must be used. Therefore, productivity is reduced, and expensive equipment such as an overexcitation particle beam source must be provided, which results in excessive manufacturing costs. High difficulty. Therefore, the present inventors have proposed that a Π-VI compound semiconductor single crystal substrate be used to thermally diffuse a diffusion source containing an element that converts the substrate of the first conductivity type to the conductivity of the second conductivity type from the surface of the substrate to form a ρ η junction photoelectric conversion. How to form a function. However, the characteristics of the photoelectric conversion function element produced by the aforementioned method strongly depend on the quality of the substrate used, and there is a problem that a photoelectric conversion function element with good light emitting efficiency cannot be stably produced. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The present invention aims to solve the above-mentioned problems, and its main purpose is to provide a method for stably manufacturing photoelectric conversion functional elements with good luminous efficiency by using n-VI compound semiconductor crystal substrates. [Invention of the Invention] First, the present inventors, etc., formed the Group 12 (2B) and Group 16 (6B) elements of the periodic table produced by several manufacturing methods. The paper size applies the Chinese National Standard (CNS) A4. Specification (210 X 297 mm) -5- 4 633 91 A7 B7 V. Description of the invention (3) (Please read the precautions on the back before filling out this page) of compound semiconductor (H-V! Group compound semiconductor) Z On the η T e substrate, a diffusion source was evaporated to form a ρ η junction by thermal diffusion, and then the correlation between the light-emitting characteristics and the quality of the substrate (especially the crystal inversion) was investigated. As a result, the density of the pits (hereinafter, referred to as etch pits) obtained by etching with a high-temperature aqueous sodium oxide aqueous solution is 20,000 pieces / cm2 or less, and preferably 10,000 pieces / cm2 or less. It is more preferable that the light emitting diodes made of a substrate with a number of less than 5000 / cm2 and a substrate of less than 2000 / crrf can be confirmed to emit light in green. On the other hand, if a light-emitting diode made of a substrate having a density of more than 2,000 pits / cm2 is used, it is not possible to confirm light emission. However, the etch pits formed by water sodium oxide are caused by the translocation in the dependent crystal and have been confirmed in other experiments. Therefore, the Z η T e substrate can equally adopt the index density and the etch pit density. From the above research results, it is determined that the light emitting phenomenon of the light emitting diode is extremely dependent on the index density or the etch pit density of the substrate surface. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs However, it is known that a large amount of precipitates are stored in the crystal according to the breeding method and breeding conditions in the Π-VI compound semiconductor. For example, the Π-VI compound semiconductors used in substrates for visible light-emitting diodes are widely used in the forbidden field, and they can be used to observe precipitates inside the substrate using an optical microscope. Therefore, ρ-type Zn η and e substrates with different precipitate densities are prepared. For example, if A 1 or I η is vaporized on the surface of the substrate as a diffusion source, a P η junction is formed by thermal diffusion. Compare the characteristics of light-emitting diodes formed in this way. In the focus field of view of an optical microscope at a magnification of 100 to 2000, the paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) -6-463391 A7 B7 V. Description of the invention (4 ) (Please read the precautions on the back before filling this page) Observe the particle size at the PN junction interface 0 · 3 ~ 1. It is ideal when the density of Oym precipitates is below 1 0 0 0 0 0 / cm When the number is less than 50,000 / c nf, a light-emitting diode with good light-emitting efficiency with less leakage current formed by recombination can be obtained. On the other hand, if the density of the precipitates exceeds 100 000 particles / cnf, the luminous efficiency is reduced. In particular, the substrate of the precipitate larger than 5 # m is known to be 1 000 0 to 5 0 0 / c nf, which has an increased leakage current and reduced luminous efficiency. For this reason, the aforementioned leakage current is considered to be caused by a current path formed by a precipitate at the P N junction interface. Therefore, it is presumed that the precipitation at the PN junction interface is suppressed, the leakage current is promoted, the luminous efficiency is improved, and an important function is achieved. However, from the observation results of a scanning electron microscope, the number of precipitates existing at the interface is generally smaller than that observed by an optical microscope. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The reason is that it depends on the size of the precipitates. When the size of the precipitates is about 1 m, the density of the precipitates existing at the interface is the same as the density of the precipitates observed by the optical microscope However, when the size of the precipitates is small, the density of the precipitates existing at the interface is about one digit smaller than the density of the precipitates observed by the optical microscope. As a result of investigation, when the number of precipitates existing at the bonding interface was 50 000 / crr or less, it was possible to obtain a photoelectric conversion element having a high efficiency and a small leakage current due to recombination. The first item of the patent application of the present invention is formed based on the above-mentioned theory. For the adoption of Group 12 (2B) elements and 16 (6) of the periodic table, the Chinese paper standard (CNS) A4 (210 X 297) is applicable. (Mm) A7 4 633 91 B7 V. Description of the invention (5 > < Please read the precautions on the back before filling in this page) B) The photoelectric conversion function element of the compound semiconductor crystal substrate formed by group elements, using defects A substrate having a relatively low density is thermally diffused from the surface of the substrate, and the substrate of the first conductivity type is converted into an element of the second conductivity type. Therefore, a ρ η junction is formed near the surface of the substrate. According to this method, the leakage current formed by the recombination can be reduced, and a photoelectric conversion function element (for example, a green light-emitting diode) with high luminous efficiency can be obtained stably. However, when the conductivity type (the first conductivity type) of the substrate is a p-type, the element that causes its thermal diffusion is an impurity (donor) that converts the substrate to an n-type: the conductivity type of the substrate is n-type In some cases, the aforementioned element that causes thermal diffusion is an impurity (acceptor) that converts the substrate into a p-type. In addition, as the aforementioned substrate, the density of pits obtained by etching with a water sodium oxide aqueous solution at 90 to 130 ° C is less than 2 0 0 0 / c πί, and more preferably 1 0 Q 0 0 / Below c irf, the most ideal is below 500 / c rri, but the pit density below 2000 / c πί can be used. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. However, the substrate density of Z η and e can be regarded as the same as the etching density of sodium oxide. Therefore, as the aforementioned substrate, the index density is less than 20000 / cirf. Ideally, it is below 10000 / crri, and most preferably, it is below 5000 / crrf. Furthermore, it is also possible to use an index density below 2000 / cnf. Or, the density of the etch pits appearing when the substrate is etched is related to the index density of the substrate, so the conditions of the etch pits appearing in other etching solutions can also be used. In addition, as the aforementioned substrate, the interface used for the aforementioned P η bonding is adopted. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -8-4 6 3 3 91 A7 ______B7___ V. Description of the invention (6 > The magnification is 100 to 200 times the particle diameter that can be observed in the focal field of the optical microscope 0.3 to 10 The density of precipitates from m is a density of 100QQ0 pieces / c rrf or less. Furthermore, the substrate is made of ZnTe Any one of ZnSe and ZnO can be formed. Β According to the aforementioned means, photoelectric conversion functional elements having different light wavelengths generated from the light-emitting areas on both sides of the interface interposed by the aforementioned ρ η junction are obtained. More specifically In the above, a photoelectric conversion element made of A 1, G a, I η, or an alloy containing these is used as the aforementioned substrate using P-type Z η T e as the aforementioned substrate, and the interface where P η is bonded is sandwiched from the aforementioned diffusion source. The light in the light-emitting area on the side is green light to red light with a wavelength of 5 50 to 700 nm, and the light in the light-emitting area on the substrate side is yellow light to red light with a wavelength of 5 8 0 to 7 0 nm. Details As shown in Table 1 (Please read the note on the back first Matters are re-filled on this page) Guang ¾ -------- Order --------- Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-9- This paper size applies to Chinese national standards (CNS ) A4 specification (210 X 297 mm) 4633 91 A7 B7 V. Description of the invention (7) (Table 1) Diffusion source A1 from the light-emitting collar on the diffusion source side and light emission from the substrate-side light-emitting area A or Contains this wavelength 5 5 0 6 3 0 Alloy 5 nm 0 8 0 6 3 0 Green light orange η m Yellow light Orange light I η Or contains this wavelength 5 5 0 7 0 0 Wavelength 6 1 0 7 0 0 alloy η m green light red π m orange light red light G a or green light with wavelength 5 5 0 6 6 0 alloy 6 m 0 m green orange η m orange Light Red Light (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Method for controlling conductivity type of Π-VI compound semiconductor. Then, when impurities are introduced into the crystal by diffusion, it is inferred that if the formation of voids in the diffusion process can be suppressed, the self-compensation effect can be suppressed, and the conductivity type can be effectively suppressed. Based on the results of repeated investigations, a diffusion source containing an element that converts the substrate to the second conductivity type is disposed on the surface of the E-VI compound semiconductor substrate showing the first conductivity type, and the heat is diffused to reach the energy level. The effect of resisting the formation of through-holes from the surface of the substrate during the diffusion process. In addition, if the impurities remaining on the surface of the substrate are known to be contained in the paper, the Chinese standard (CNS) A4 specification (210 X 297 mm) is applicable. -10-463391 A7 B7 V. Description of the invention (8) (Please First read the note on the back of the page, and then fill out this page.) Source elements and impurities are stabler than the constituent elements of the substrate and the impurities. The impurities can be removed from the surface of the substrate, which has the effect of improving the surface purity of the substrate. Then, in accordance with the results of the foregoing research, on the surface of the P-type Z η T e substrate, in a vacuum, A 1 or I η that converts the foregoing substrate into an η-type impurity is formed in a vacuum to form A 1 or I η. The film was subjected to a heat treatment in a gas phase of 1 ^ 2. As a result, it was found that the vaporized A 1 or I η can prevent the highly volatile Z η from being evaporated from the surface of the substrate, and has the effect of suppressing the occurrence of voids in the substrate. In addition, A 1 or I η can remove impurities from the surface layer of the substrate in order to form impurities such as oxygen and stable compounds in the ZnTe substrate, and it is expected that the purity of the substrate surface can be improved. Then, a resistive electrode was formed on both sides of the substrate of A 1 or I η by thermally diffusing the same to form an invented diode as a photoelectric conversion element. This light-emitting diode shows rectifying characteristics, and light emission can be confirmed. In addition, the ρ η junction is formed by the method of thermal diffusion of A 1 or I η described above, but it is confirmed by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs using the Electron Beam Induced Current Method. From the above description, it can be confirmed that this method is effective for the formation of the P η junction of a Π-VI compound semiconductor. In addition, comparing the results of the case where A 1 and I η are used as the diffusion source, it is learned that the case where A 1 is used is closer to green than the case where I η is used. Furthermore, in the case of I η ', it is also known that the size of the mixed red light is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 463391 A7 _B7___ 5. Description of the invention (9) (Please read the note on the back first Please fill in this page again for the matter. "This red luminescence is considered to be caused by the impure oxygen. That is, the oxygen mixed in the crystal enters the T e lattice position and emits light in red. It has been known that it is considered to be oxygen. The form bound to Z η is present in the crystal. Here, A1 or I η binds strongly to oxygen, and the free energy of the bond is reduced to 169 KJ near the annealing temperature of 60 ° C. / mol, ~ 635KJ / mol, is more stable than the free energy of binding of ZnO (-260KJ / mo1). In addition, since the oxide of A 1 is more stable than the oxide of I η, it is considered to be due to A 1 The effect of receiving oxygen from the Z η T e substrate is increased, so that red light formed by oxygen is emitted. The same effect can be expected even for C 1 S i, B i, etc., where the free energy of the oxide is small. In addition, an emission peak is held on the long-wavelength side in the E-VI compound semiconductor The impurities, other than oxygen, there are other include Au, Ag, C u or L i.

Au, Ag, Cu are more stable than compounds such as halogens such as Cl and η η, so they use halogen-containing diffusion sources to remove these impurities from the substrate during the diffusion process. The cooperative printed secondly, repeated the results of various experiments for the heat treatment temperature of the diffusion process from 300 ° C to 7 0 ¢ 3 t: It was learned that the diffusion can be uniform in the low temperature range, from 300 to 4 3 It is preferable to perform heat treatment in a range of 0 ° C. In addition, the results of various experiments were repeated by changing the heat treatment time in the range of several minutes to dozens of hours. If the heat treatment time is specified by A 1 and I η, this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). ) -12- 463391 B7_ V. Description of the invention (10) (Please read the precautions on the back before filling this page) for more than time, but it is judged that the diffusion source does not remain on the substrate surface at the end of the diffusion process. If it does not have good current and voltage characteristics, it often does not emit light. This is considered to be because the diffusion source has a sufficient thickness without remaining on the surface of the substrate at the end of the diffusion, and the use of the diffusion source cannot sufficiently suppress the evaporation of Z η and the occurrence of void defects in the substrate. It is also considered that impurities such as oxygen existing in the substrate cannot be sufficiently collected by a diffusion source. Therefore, it is important to know that the diffusion source has a sufficient thickness at the end of the diffusion and remains on the substrate surface. The Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the second patent for this invention, which is formed based on the above-mentioned theory. It is aimed at including the use of elements of Group 12 (2B) and Group 16 (2 Β) The formed compound semiconductor crystal plate is formed with a pn junction near the surface of the substrate by thermal diffusion of a diffusion source containing an element that converts the substrate of the first conductivity type to a substrate of the second conductivity type, and electrodes are provided on both sides of the substrate. A method for manufacturing a photoelectric conversion function element during the process; arranging the aforementioned diffusion source on the surface of the aforementioned substrate and preventing a defect in the diffusion process from compensating for the impurity level formed by the element contained in the aforementioned diffusion source formed on the substrate, and further An element containing impurities on the surface of the diffusion source gas-receiving substrate. Because of this, suppressing the self-compensation effect can effectively improve the controllability of the conductivity type of the η _ VI compound semiconductor, and can improve the purity of the substrate surface, and can obtain a photoelectric conversion element with good luminous efficiency. However, the aforementioned substrate The conductive type (the first conductive type) is ρ type. The paper size is applicable to the national standard (CNS) A4 specification (210 X 297 mm) -13- 4 633 9 1 A7 _____B7__ 5. Description of the invention (11) < Please read the precautions on the back before filling this page). In addition, the element contained in the aforementioned diffusion source is an impurity (donor) that converts the substrate into an η-type; when the conductivity type of the substrate is η-type, The element contained in the aforementioned diffusion source is an impurity (acceptor) that converts the substrate into a p-type. In addition, the compensation includes a case where a defect indicating a level of a conductivity type (second conductivity type) different from the conductivity type (first conductivity type) of the substrate is a hole or a defect including the hole. Further, at the diffusion temperature, the above-mentioned diffusion source is formed by a substance whose binding free energy is smaller than the binding free energy of the combination of the constituent elements of the substrate and the impurity in the substrate by the diffusion source and the impurity in the substrate. Or, at the diffusion temperature, the element containing the free energy of the combination of the compound bound by the element contained in the diffusion source and the impurity of the substrate is smaller than the free energy of the bond of the constituent elements of the substrate and the compound bound by the impurity, This constitutes the aforementioned diffusion source. In addition, the impurities in the substrate are at least one of 0, Li, Ag, Cu, and Au. As the diffusion source, Ai, Ga, I η, or an alloy of these, or Cl, Br, I, or an alloy of these are used. Just fine. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In addition, the elements of the aforementioned diffusion source of impurities contained in the gas-receiving substrate diffuse to the element of the second conductivity type more slowly than the elements of the first conductivity type The speed element in the substrate may be sufficient. The element of the aforementioned diffusion source that contains impurities in the absorption substrate is at least one of B, Si, and C. In addition, the aforementioned diffusion sources are sputtering, impedance heating, and electron beam methods. 14- This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297 mm) 463391 A7 B7 V. Description of the invention (12) One of them may be evaporated on the surface of the substrate in a vacuum. The diffusion treatment temperature is 300 ° C to 700 ° C. (: It is sufficient.) Further, the diffusion source is formed with a film thickness of 1,000 to 10,000 A, preferably 1.50 ° to 5000 A. In addition, the diffusion source remains after the diffusion is completed with a predetermined degree of stomach. It may be on the surface of the substrate. However, after the diffusion source is finished, the film thickness of 100 A or more, preferably 300 A or more, remains. In addition, the diffusion source is A 1 or When it is I η, the diffusion time may be longer than the time specified by the relational expression Y = 2 X 105exp (― 〇.Ό18Τ), which expresses the relationship between the diffusion time Υ and the heat treatment temperature T. However, the substrate is expected to be a ZnTe substrate The inventors investigated the light-emitting characteristics of the photoelectric conversion function element, and found that the light-emitting characteristics strongly depend on the surface orientation of the substrate on which the diffusion source is arranged. Then, the photoelectric conversion function element was produced after the diffusion source was arranged on various substrate surface orientations, and the process was returned. Specifically, a Z nT e crystal of one of the π-VI compound semiconductor single crystals was cut in various plane orientations as a substrate, and a diffusion source A 1 was evaporated on the surface of the substrate. Thermal diffusion formation of ρ η junction 丨 After forming electrodes on both sides of the substrate, photoelectric conversion functional elements were fabricated, and the light emission characteristics of these samples were investigated. As a result, samples other than the (111) Te surface of the substrate can be obtained from the substrate. Fully confirmed the light emission, but the substrate surface is (1 1 1) (Please read the precautions on the back before filling in this page) Λ -------- Order ---- Line 〇 Staff of Intellectual Property Bureau, Ministry of Economic Affairs Printed by Consumer Cooperatives

This paper size applies to the Chinese National Standard < CNS) A4 specification (210 X 297 mm) -15- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 463391 A7 --- B7 V. Description of the invention (13) T e The sample can only confirm low light. Then, the reason is investigated, and the (1 1 j [) Te surface is compared with other surfaces' (1 1 1) T e surface is roughened after etching the substrate. In addition, the (111) Zn plane, (0 0 1) plane, and (0 1 1) plane other than the (1 11) Te plane were not roughened after being etched by uranium. In addition, the adhesion between A 1 which is a diffusion source and the surface of the substrate is evaporated on the surface where the surface is roughened. Therefore, it is considered that part of the generated heat is not diffused into the substrate. In fact, it was confirmed that the diffusion source that was vaporized on the (1 1 1) T_ e surface was prone to fall off. In addition, as a result of investigating the state of diffusion in the plane, the samples with a substrate surface of (1 1 1) and the T e plane had uneven and uneven diffusion depths, and many non-diffused portions were also observed. On the other hand, if the substrate surface is a sample other than the (1 1 1) T e surface, it is determined to be a slightly uniform diffusion. From the above, it is found that the roughness of the substrate surface causes unevenness in diffusion, which deteriorates the light emitting characteristics. Therefore, in order to obtain good light emission characteristics, it has been concluded that it is important to etch at least under conditions that do not cause surface roughness. Therefore, various tests have been performed with an etchant that does not cause surface roughening, but an appropriate etchant cannot be found for the (1 1 1) T e surface. In addition, it is confirmed that the surface other than the (1 1 1) T e surface is etched with an etchant such as a hydrobromic acid or a B r -methanol system, thereby obtaining a relatively flat surface state < Items are formed according to the above theory (please read the note $ on the back before filling this page), install ---- 1 --- order ---- line C3 · This paper size applies to Chinese national standards ( CNS) A4 specification (210 X 297 mm) -16- 463391 B7 5. Description of the invention (14), for compounds containing compounds formed by using Group 12 (2B) elements and Group 16 (6 B) elements of the periodic table A semiconductor crystal substrate, a diffusion source containing an element that changes the first conductivity type substrate to the second conductivity type is disposed on the substrate, and ρ η junctions are formed near the surface of the substrate by thermal diffusion, and electrodes are provided on both sides of the substrate. Process for manufacturing the photoelectric conversion function element: After the etching, the aforementioned diffusion source is arranged on the substrate surface having a flat surface orientation. Because of this, the substrate surface orientation is limited to avoid affecting the light emitting characteristics of the surface orientation, and it can be stable. Making good luminous efficiency Function conversion element. Here, the substrate may be one of ZnTe, ZnSe, and ZnO. In addition, if a substrate having a substrate surface of (111) Zn surface, (001) surface, or (0 1 1) surface is used, a flat surface can be obtained after uranium engraving. Alternatively, a substrate having a substrate surface that is inclined within 10 ° from the (111) Zn surface, the (001) surface, or the (0 1 1) surface can also obtain a flat surface after etching. In addition, before disposing the above-mentioned diffusion source, the surface of the chemically etched substrate may be used. In this case, it is preferable to perform etching with a bromic acid-based or bromine-based uranium etchant. Furthermore, as a result of repeated review of the manufacturing method of the photoelectric conversion element by the present inventors, it was determined that the diffusion was performed at a low temperature (300 to 5500 ° C) for a long period of time (a diffusion source must remain after the diffusion treatment) and diffused. The paper size to be processed is in accordance with China National Standard (CNS) A4 (210 X 297 mm) (谙 Please read the precautions on the back before filling in this page) Install! —Order! I-line. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -17- A7 4633 91 _____B7____ V. Description of the Invention (15) The elements constituting the diffusion source are evenly diffused, so the light emission characteristics are also stable. Then, the diffusion treatment conditions It is the same, and based on the inference that the light-emitting characteristics obtained through the diffusion source after diffusion are formed due to the diffusion source, the experiment of determining the most appropriate evaporation condition of the diffusion source is repeated with more stable light-emitting characteristics. Here, the diffusion treatment conditions were 4 2 0 ° C for 16 hours. In addition, a p-type Z η T e substrate, which is a type of a Π-VI compound semiconductor, was used as the substrate, and A1 was used as the diffusion source for experiments. First, the thin film of the above-mentioned A 1 diffusion source was thinned by vacuum evaporation at a film thickness of 5 nm, 10 nm, 20 nm, 50 nm, 100 nm, 200 η m. 5 Ο Ο η m. Formed on the aforementioned Z ηΤe substrate, and subjected to a diffusion treatment at 4 2 0 ° C for 16 hours to form a P η junction == At this time, after the diffusion treatment in the foregoing diffusion condition is completed, any diffusion source with a film thickness remains On the substrate. Thereafter, an electrode was provided as a light emitting diode on the back surface side of the aforementioned Z η T e substrate, and the correlation between the thickness of the vaporized diffusion source and the light emission characteristics of light observed through the diffusion source was examined. As a result, when the film thickness of the vaporized diffusion source is 5 to 50 nm, the light observed through the A 1 diffusion source is high-intensity and stable green light, and the film thickness of the vaporized diffusion source exceeds 5 At 0 nm, the relative intensity of yellow light is stronger than that of green light, and it is generally judged that the light emission intensity is reduced. From this result, the present inventors believe that the yellow light emitting center may be a defect caused by an excessive amount of A 1. That is, increasing the film thickness of the A 1 diffusion source increases the A 1 concentration diffused into the Z η T e substrate, so it is inferred that this paper size may apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ( (Please read the notes on the back before filling out this page)

M ------- Order ------- line CV Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-18- 463391 A7 B7 V. Description of the invention (16) Add a factor to the Z η T e substrate The defects caused by A 1 increase the intensity of yellow light emission. (Please read the precautions on the back before filling out this page.) Then, based on the results of the repeated inferences, the photoelectric conversion element with good light emission characteristics was successfully manufactured by appropriately limiting the film thickness of the diffusion source. Furthermore, the present inventors reviewed the distance the diffusion source diffuses to the substrate and the light-emitting characteristics of the photoelectric conversion element obtained. It was then noted that if the A 1 diffusion source remained on the Z η T e substrate, the diffusion distance strongly depends on the diffusion processing conditions, and the film thickness of the A 1 diffusion source was hardly affected. Because of this, if the diffusion treatment conditions are the same, the diffusion distance of A 1 is also the same. Therefore, it is considered that the light emission intensity at the time when the light emitted at the pn junction position reaches the interface between the substrate and the diffusion source is also the same. However, the luminous intensity obtained through the A 1 diffusion source varies depending on the film of the A 1 diffusion source. Then, the results of the review were further repeated, and it was noted that the light intensity obtained by intervening the A 1 diffusion source was changed due to the change in the transmittance of the diffusion source as the film thickness of the A 1 diffusion source changed. Therefore, thinning the film thickness of the diffusion source makes it easy to transmit light, and stable and stable green light emission can be obtained. Printed in this way by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy To form a new transparent electrode, a diffusion source can also be used as an electrode to improve the light transmission efficiency. The fourth item of the present patent application is directed to a compound semiconductor crystal substrate formed based on the above-mentioned theory and containing a compound semiconductor formed from Group 12 (2B) elements and Group 16 (6 B) elements of the periodic table. Standards apply to China National Standard (CNS) A4 specifications (210 x 297 mm) -19- 4 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 633 91 A7 _B7__ V. Description of the invention (17) The surface configuration of the board contains the first conductive A method of manufacturing a photoelectric conversion element by converting the aforementioned substrate of the type into a diffusion source of the second conductivity type, forming a ρ η junction by thermal diffusion to the vicinity of the surface of the substrate, and providing electrodes on both sides of the substrate; The diffusion source is disposed on the substrate surface with a film thickness of nm to 50 nm. Because of this, the amount (concentration) of the diffusion source diffused into the substrate can be controlled, so it is possible to prevent the light emitting characteristics from being changed due to defects formed in the substrate due to the diffusion source, and it is possible to produce a photoelectric conversion function with excellent light emitting characteristics. element. In particular, the film thickness of the diffusion source is 5 to 20 nm, which is more effective. Because of this, the diffusion source remaining on the surface of the substrate after the diffusion process is formed to have sufficient light transmittance, so the light intensity transmitted through the diffusion source is strong, and it can be manufactured in a simple process and at a low price without forming IT. The transparent electrodes such as 〇 have photoelectric conversion function elements with good light transmission efficiency. In addition, the processing temperature of the diffusion may be 300 to 550 ° C. In addition, the M physical time of the diffusion may be set to a predetermined thickness remaining after the diffusion source is subjected to diffusion treatment, and may be, for example, a thickness of 3 to 15 nm. Here, the substrate may be ZnTe, ZnSe, or Zo. Furthermore, the aforementioned diffusion source may be A 1, Ga, I η, or an alloy of these. Second, the inventors investigated the relationship between the luminous intensity of the photoelectric conversion element and the PL (photoluminescence) intensity of the substrate before the diffusion source was diffused. Judging that the two have a strong correlation. For this reason, I learned that if a substrate with a higher PL strength is used to manufacture the photoelectric conversion function components, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling the book Page) -20- 633 91 A7 __B7_ 5. Description of the invention (18), a photoelectric conversion element with excellent light-emitting characteristics can be obtained. (Please read the precautions on the back before filling this page) However, it was found that the PL intensity of the substrate before diffusion strongly depends on the carrier concentration in the substrate. Therefore, the PL intensity of the substrate before diffusion is high to determine the optimal carrier concentration, and the relationship between the PL intensity of the substrate before diffusion and the carrier concentration is repeatedly reviewed. Specifically, a predetermined amount of a dopant is doped to a single crystal substrate of a H-VI compound semiconductor to produce a substrate having a carrier concentration of 7 X 1 0 1 6 to 7 X 1 〇 1 s c m -3. Then, the PL intensity was measured for each substrate, and the relationship with the carrier concentration of the substrate was investigated. The results are shown in Figure 4. It is judged from Fig. 4 that the PL intensity does not increase in proportion to the carrier concentration, but decreases when the carrier concentration is formed to be constant or more. In addition, it is inferred from the foregoing theory that if a substrate having a carrier concentration in the range of 1 X 1 017 to 5 x 1 018 cm-3 is used, a photoelectric conversion element having a high luminous intensity can be obtained. Therefore, the present inventors performed the following experiments in order to confirm the aforementioned inference. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs First, a substrate with a carrier concentration of 7x 1 016 ~ 7x 1 018 cm 3 is used. A diffusion source is vaporized on the surface of the substrate, and ρ η bonding is formed by cooked diffusion. Thereafter, a resistive electrode was formed on the back surface of the substrate, and then a photoelectric conversion element was produced, and its light emission characteristics were investigated.

As a result, it was confirmed that a substrate having a carrier concentration of 1 X 1 017 to 5 × 1 0 -18 cm 3 was used to produce a photoelectric conversion element that emits high-intensity green light. In addition, the photoelectric conversion function element produced by using a substrate having a carrier concentration of 3 X 1 0 17 to 2 X 1 0 16 c m_3 emits high-intensity and stable green light. Furthermore, the carrier concentration is 5 X 1 0 17 ~ 9 X. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 g) -21-printed by the Intellectual Property Bureau Staff Consumer Cooperative of the Ministry of Economic Affairs 463391 A7 ______B7_ 5. Description of the invention (19) The photoelectric conversion function element produced by the substrate of 1 0 17 c m_3 emits higher intensity and stable green light. In addition, a photoelectric conversion function element made of a substrate having a carrier concentration smaller than 1 X 1 〇1 7 cm _ 3 and a substrate having a carrier concentration lower than 5 X 1 0 18 c m_3 was confirmed to be 1 X 1 0 1 7 ~ 5 X 1 0 18 c m_3 substrate has a low luminous intensity for the photoelectric conversion element. The fifth item of the patent application of the present invention is formed based on the above-mentioned theory, using a compound semiconductor crystal substrate formed of Group 12 (2B) elements and Group 16 (6B) elements of the periodic table. A photoelectric conversion element formed by converting the aforementioned substrate of the first conductivity type into a diffusion source of the element of the second conductivity type, forming a pn junction near the surface of the substrate by thermal diffusion, and providing electrodes on both sides of the substrate; The carrier concentration is 1 _x 1 0 1 7 cm — 3 ~ 5 X 1 0 1 8 cm _ 3. Here, the substrate may be ZnTe, ZnSe, or ZnO. Further, the diffusion source may be Al, Ga, In, or an alloy thereof. In addition, the substrate may be doped with a predetermined amount of Group 15 (5 B) elements of the periodic table, for example, doped with phosphorus to form a desired carrier concentration. Furthermore, the present inventors investigated the light-emitting characteristics of the photoelectric conversion element, and found that most of the emitted light was absorbed near the surface of the substrate, and the light emitted to the outside was relatively weak. The reason for this is presumed to be that the ZnTe, ZnSe, ZnO, etc. constituting the substrate are directly migrating. That is, for example, the paper size of ZnTe is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -22- (Please read the precautions on the back before filling this page), install ----- -Order --------- line 0.0463391 A7 B7 V. Description of the invention (20) (Please read the precautions on the back before filling out this page) Absorption of light in the wavelength band of 5 50 nm The coefficient a is ~ 1 X 1 0 4 / cm, and the emitted light decays exponentially as the thickness of the substrate passing through increases. Therefore, for the photoelectric conversion function element that emits light using the light band, it must be emitted from the surface of the substrate before the light is attenuated. As a result of further review of the above points, it was concluded that in order to increase the luminous intensity of the photoelectric conversion function element, it is necessary to determine the diffusion depth within a range that can emit light of a desired intensity. Therefore, an experiment was performed to determine the optimum diffusion depth when P 1 type Z η T e was used for the substrate and A 1 was the diffusion source. First, A 1, which is a diffusion source, is vaporized on a substrate of type Γ η e, a ρ η junction is formed by thermal diffusion, and electrodes are formed on the front and back surfaces of the substrate to produce a light-emitting diode. Then, the result of the light emitting diode was evaluated by the E B IC (Electron beam iduced current) method. As shown in the graph in FIG. 5, it was also judged that the dopant was at the same level or slightly lower than the carrier concentration of the substrate. . In addition, it was also judged that the diffusion length of a small number of carriers was shorter than about 0.2 to 0.3 jm. From the foregoing results, Yin Li, an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, was speculated to be in the optimal carrier concentration range of the substrate, and the thickness from the bonding portion to the empty layer formed in the n-type layer was 0 · 1 ~ 0. m. Then it is considered to be an invention formed from the surface of the substrate, from the end of the empty layer, and combined with a small number of carriers. At least from the light emitting area to the surface, it must be within 1 / a (a is the absorption coefficient). In other words, it is known that the case of ZnTe is “1 / a is lem”. Considering the width of the depleted layer and the diffusion length, the bonding interface is most suitable to be formed in the range of 0.3 to 2 · 0 // m. Result of the experiment 'Diffusion distance (diffusion depth-23- This paper size applies to Chinese national standard < CNS) A4 specification (210 X 297 Gongchu) Printed by the Intellectual Property Bureau Staff Consumer Cooperative of the Ministry of Economy 4633 91 A7 B7 V. Description of the invention (21) Degree) When the surface exceeds 2.0, almost no green luminescence is observed, and when it is less than 0.3 β m, the leakage current is increased, and the degree of green can be partially observed. From this situation, it is possible to confirm the validity of the aforementioned diffusion distance 0.3 to 2.0 from m. However, the position of the bonding interface can be expressed as S EM (

(Secondary ary electron microscope) The cut surface of the substrate was observed, and it was confirmed by the density of the S EM image. The sixth item of the patent application of the present invention is formed based on the above theory and uses a compound semiconductor crystal substrate formed of Group 12 (2B) elements and Group 16 (6B) elements of the periodic table. The substrate of the first conductivity type becomes a diffusion source of the elements of the second conductivity type, and thermal diffusion is used to form a pn junction near the surface of the substrate, and electrodes are provided on both sides of the substrate to form a photoelectric conversion function element; the depth of the diffusion It is from Table 0 · 3 to 2.0 μm or less from the aforementioned substrate. In this way, since the depth of diffusion is limited, it is possible to reduce the attenuation caused by light absorption and increase the luminous intensity. Here, the substrate may be ZnTe, ZnSe, or Zn0. The diffusion source may be A1, Ga, Iη, or an alloy thereof. According to the above-mentioned means, a photoelectric conversion function element having a light emission center wavelength of 5 50 nm to 5700 nm is obtained. Next, the present inventors evaluated the current-voltage characteristics (I-V characteristics) by cutting forward to a predetermined size slice and using a resin-encapsulated light-emitting diode to flow forward current '. As a result, it is judged that the current is in the low voltage field. ------------- Λ ---! | Order ---- I --- line. (Please read the precautions on the back before filling (This page) This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) -24-463391 Α7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of invention (22) or reverse bias An increase in the current (leakage current) flowing through the voltage is not very good for the luminous efficiency. Therefore, the result of investigating the cause of the investigation was' inferred that the diffusion source was vaporized to the entire surface of the substrate due to the aforementioned thermal diffusion ', so when the substrate was cut into slices, the η bonding interface was exposed to the cut surface' but The processing deterioration of the ρ η joint interface affects the increase of leakage current. That is, it is considered that a dicing saw is used to cut the substrate into slices. However, when the dicing saw performs a cutting process, the P η joint interface exposed to the cut surface is deteriorated, which increases the leakage current. In order to remove such a process-deteriorating layer of the P η junction interface, it is generally used to etch the cut surface. However, in the case of a Z η T e substrate, there is no etching solution that effectively removes T e, and T e remains on the cross-section after the etching, so the leakage current cannot be sufficiently reduced. Therefore, it is necessary to reduce the leakage current by a method other than etching. The present inventors investigated the cause of the leakage current in more detail, and the problematic leakage current prevented the flow through the ρ η joint surface of the cut surface. From this result, it is inferred that if there is no P η interface on the cut surface of the substrate, the leakage current can be suppressed even after cutting. Based on this reasoning, only the cut-off portion was tested as a light-emitting diode after diffusion with a diffusion source evaporated. Then, the portion where the diffusion source was not vaporized was cut with a dicing saw to cut into sections of light-emitting diodes, and the I-V characteristics of the sections were evaluated. As a result, it can be confirmed that the leakage current of the light-emitting diode does not change before and after cutting, and does not increase the leakage current when the cut surface exposes the ρ η junction interface, thereby improving the luminous efficiency = the present invention patent Item 6 is based on the above-mentioned theory. The paper size is applicable to 111 national standards (CNS) A4 specifications (210 x 297 mm) {Please read the precautions on the back before filling this page) n I ϋ- --Order --------- line (0- -25- 4633 9 printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Α7 Β7 V. Description of the invention (23) The 12th (2B) family of the periodic table A compound semiconductor crystal substrate formed of an element and a group 16 (6B) element is provided on the substrate with a diffusion source that converts the substrate of the first conductivity type into a element of the second conductivity type, and diffuses to the surface of the substrate by heat. A p η junction is formed nearby, and electrodes are formed on both sides of the substrate to form a photoelectric conversion function element. The aforementioned pn junction is formed so that the junction surface of the diffused substrate surface is perpendicular to the cross section so that the junction interface is not exposed. Cross section exposed The disappearance of the η junction interface significantly reduces the leakage current flowing through the η junction interface of the cut surface and improves the luminous effect. However, the diffusion source lies in the substrate and is only partially evaporated to a predetermined distance from the periphery of the substrate. Inside, the diffusion source may constitute one of the electrodes. Here, the substrate may be one of ZnTe, ZnSe, and Zn0. Further, the diffusion source may be A 1, Ga, I η, or an alloy of these. In addition, the photoelectric conversion function element is a cover on the substrate that covers at least a portion through which the cutting means for cutting the photoelectric conversion function element passes, and is provided with a cover opened by a portion where the diffusion source is disposed. Via the mask, the diffusion source is partially vaporized, and the diffusion source is thermally diffused to form a pn junction. After forming electrodes on the front and back surfaces of the substrate, the mask is covered with the mask without vaporizing the foregoing. A portion of the diffusion source is 'divided into slices by a predetermined cutting means to manufacture a photoelectric conversion element. However, the cutting means is a dicing saw' and the substrate The paper size adopted by the cutting method applies the Chinese National Standard (CNS) A4 specification (210 X 297). -26- (Please read the precautions on the back before filling this page) 1111111-ill — ΕΕΕ — _ 4 6 3 3 91 A7 B7 V. Description of the invention (24) The part can be formed by the width of the cutting blade's blade width more than 2 times. (Please read the precautions on the back before filling in this page) [Simplified description of the drawing] Fig. 1 is a reference diagram showing the manufacturing process of a light-emitting diode as a photoelectric conversion function element of the present invention: Fig. 1 (a) is a diagram before the diffusion source is diffused, and Fig. 1 (b) The figure is a schematic diagram after spreading. Fig. 2 is a schematic diagram showing a schematic configuration and a light emitting state of the light emitting diode of the present invention. Fig. 3 is a graph showing the relationship between the heat treatment temperature and the diffusion time of the method for manufacturing a photoelectric conversion element of the present invention. Fig. 4 is a graph showing the relationship between the PL intensity of the substrate and the carrier concentration. Fig. 5 is a graph showing the results of measuring the cross section of a substrate after the diffusion source has been diffused by the EBI method. Comparison table of main components Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1. Substrate 2 Diffusion source 3 Diffusion layer 4 π η junction interface a 1 Luminescence field a .2 Luminescence field-27- This paper applies Chinese national standards (CNS > A4 specification (210 X 297 mm) A7 4633 91 B7_ V. Description of the invention (25) L1 luminous L 2 luminous {Please read the note on the back of the page before filling in the page} [Embodiment] (First Embodiment) Referring to Figures 1 and 2, the density of the uranium etchants on the surface obtained by immersing in a 100 ° C I; I Omo 1% N a Ο 4 solution for 4 minutes is 2000 / cnf, 8000 / cm2, 60,000 / A Pr-type ZnTe substrate of crrf is formed by vaporizing an A 1 diffusion source on the surface of the substrate, and thermally diffusing the diffusion source into the inside of the substrate to form a pn junction, and the photoelectric conversion function element prepared by providing an electrode. The first picture is The reference drawing showing the outline of the manufacturing process of the light-emitting diode as the photoelectric conversion function element of the present invention. However, the second figure is the outline drawing showing the outline of the light-emitting diode of the present invention and its light-emitting state. Property Bureau employee consumption cooperation As a substrate 1, a P-type Zn η T e single crystal substrate using doped P (phosphorus) and a carrier concentration of 3 X 1 017 / cm3 was printed. The polished substrate 1 was degreased with acetone and then washed with ultrapure water. Thereafter, the substrate 1 was etched with a 2% Br-methanol solution for 5 minutes, washed with ultrapure water, and then installed in a vacuum evaporation apparatus. The vacuum evaporation apparatus was evacuated to a vacuum degree of 2 X 1 0_eT 〇 r r or less, and A 1 of the diffusion source 2 was evaporated to a surface of the substrate at a thickness of 4 00 A. Thereafter, the substrate 1 was taken out from the vacuum evaporation apparatus and placed in a soaking zone of a diffusion furnace equipped with a quartz reaction tube capable of vacuum evacuation. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -28-463391 A7 __B7_ V. Description of the invention (26) Then, the inside of the diffusion furnace is evacuated and replaced with nitrogen. After repeating this operation several times, heat treatment was performed at 50 ° C for 30 minutes while flowing nitrogen. With this heat treatment, A 1 as the diffusion source 2 is diffused into the interior from the substrate surface to a depth of 2 to form an A 1 diffusion layer, and a P η junction is formed. In the figure, however, the figure No. 4 indicates a pn joint interface formed at a position from the substrate surface to a depth of 2 // m. After cooling, the substrate 1 is taken out, a protective film is formed on a part of the surface, and a part of A 1 remaining on the surface is etched. However, the remaining A 1 is formed as a surface electrode. Thereafter, the surface was protected with a resist, and then the surface was plated with gold as an electrode to produce a light-emitting diode as a photoelectric conversion element. 'A predetermined current was passed through these light-emitting diodes fabricated using substrates having different etch pit densities, and the light-emitting characteristics were compared. The light-emitting diodes produced by using substrates with a surface etching pit density of 2000 / cnf and 800 / cnf / cnf are sandwiched by P η junction interface 4 and emit light on the side of A 1 diffusion layer 3 In area a 1, the light emission Lb is observed in a wavelength range from green to orange (5 50 to 6 3 0 nm). In addition, the light-emitting area a2 on the substrate 1 side is sandwiched by the p η junction interface 4. Luminescence L 2 was observed in the orange wavelength range (580 to 630 nm). In addition, a light-emitting diode made from a substrate with a surface etching pit density of 60,000 / crri can be confirmed in any light-emitting area (please read the precautions on the back before filling this page), Packing ------ II order --------- line. The paper printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is compliant with China National Standard (CNS) A4 (210 X 297 mm)- 29- 463391 A7 B7 V. Description of the invention (27) Luminescence. (Please read the note on the back before filling in this page> (Second embodiment) With reference to Figures 1 and 2, the density of precipitates on the surface is several / cnf, 4000 / cm2, 50000 / cm2, 2000000 pcs / cm2 of P-type ZnTe substrate, the A 1 diffusion source was vaporized on the surface of the substrate, and the diffusion source was thermally diffused inside the substrate to form a pn junction, and the photoelectric conversion function element produced by the electrode was set. The sample was subjected to substrate cleaning, diffusion source evaporation, heat treatment (thermal diffusion), and electrode formation in the same manner as the first embodiment described above, and a light-emitting diode serving as a photoelectric conversion element was produced. A current was passed through these light-emitting diodes. Comparing the light emitting characteristics of the polar body, it was confirmed that all the light emitting diodes emit light from green to yellow. The light emitting area a 1 on the side of the A 1 diffusion layer is compared with each other with respect to the light emitting area a 1 on the side of the A 1 diffusion layer. As a result of the current and voltage characteristics of the body, the surface density of the precipitates is several pieces / cm3, 4000 pieces / cni. Polar body The current is rapidly increased in the voltage range of IV to 1.2V, and the current is hardly flowing below the voltage above. Then, the light emission starts from the voltage range of 2V to 2.4V, and the luminous efficiency is also improved by about 1%. However, The interlayer P η is bonded to the surface 4, and the light emission L 2 generated from the light emitting area a 1 on the side of the A 1 diffusion layer 3 is in a wavelength range from green to orange (550 to 63 nm). In addition, the interlayer pn junction interface 4 The light-emitting area on the substrate 1 side a 2 The wavelength range from yellow to orange (This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -30- 4633 9 A7 B7 Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative V. Description of the Invention (28) 580 ~ 63nm) Luminescence L2 was observed. In addition, the luminescence produced by using a substrate with a surface precipitate density of 2 0 0 0 0 / errf-2 The voltage at the electrode is 0.6 V. The current is picked up. When 4 V is applied, light is emitted. However, its luminous efficiency is extremely low to 0.01%. (Third Embodiment) Referring to FIGS. The density of precipitates on the surface is several / cni, 4000 / cma, 50000 / cm3, 200000 / Cnf P-type ZnTe substrate, the I η diffusion source is vaporized on the surface of the substrate, the diffusion source is thermally diffused into the substrate to form a P η junction, and the photoelectric conversion function element produced by the electrode is set. For each sample, In the same manner as the first embodiment described above, the substrate was cleaned, the diffusion source was evaporated, the heat treatment (thermal diffusion), and the electrodes were formed to produce a light-emitting diode as a photoelectric conversion element. A current was passed through these light-emitting diodes, and the light-emitting characteristics were compared, and it was confirmed that the light-emitting diodes emit light from green to red in all. The interlayer P η junction interface 4 is used to compare the current-voltage characteristics of the respective light-emitting diodes with respect to the light-emitting area a 1 on the side of the η η diffusion layer. The density of the precipitates on the surface is several / cm2, 4 0 0 Light-emitting diodes made of substrates of 0 pcs / cnf, 50 000 pcs / cm, rapidly increase the current in the range of 2.IV to 2.5V, and almost no current flows below the voltage. Then, the light emission starts from the voltage range of 2 · 5V to 3.0V. 0 Please read the precautions on the back before filling in this page) \ Installation ------- Order i—I—— · Line-This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) -31-463391 A7 B7 V. Invention description (29), the luminous efficiency is also increased by 1%. (Please read the precautions on the back before filling this page) However, the light emission L 1 generated from the light emission area a 1 on the side of the I η diffusion layer 3 with the P η junction interface 4 is in the wavelength range from green to red ( 550 ~ 700nm). In addition, the light-emitting region a 2 in the light-emitting region a 2 on the substrate 1 side with the ρη junction interface 4 was observed to emit light L2 in a wavelength range from 6 to 700 nm. In addition, a light-emitting diode manufactured using a substrate having a surface precipitate density of 20000 pieces / cm2 starts to increase current at a voltage of about 0.5 V. When a voltage of 5 V is applied, light emission starts, but its luminous efficiency is extremely low to 0.01%. (Fourth Embodiment) With reference to Figs. 1 and 2, the diffusion of A 1 and I η using a P-type ZnTe substrate having a surface precipitate density of 4,000 / cm2, 50000 pieces / cnf, and 200Q00 pieces / cm2 will be described. A source is vaporized on the surface of the substrate, and the diffusion source is thermally diffused into the inside of the substrate to form a pn junction, and a photoelectric conversion function element produced by the electrode is provided. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs for each sample, as in the first embodiment described above, substrate cleaning, diffusion source vaporization, heat treatment (thermal diffusion), and electrode formation are performed to produce photoelectric conversion elements For the light-emitting diode, several diffusion sources capable of changing the alloy combination of A 1 and In are used as the diffusion sources. A current is passed to these light-emitting diodes, and the light-emitting characteristics are compared. The light-emitting light L 1 generated from the light-emitting area a 1 on the side of the diffusion layer 3 is interposed between the pn junction interface 4 and the wavelength range from green to red (50 0 0 ～ 7 〇 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -32- 463391 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of invention (3 (3) nm) In addition, the light emission L 2 generated from the light-emitting area a 2 on the substrate 1 side through the pn junction interface 4 has a wavelength range from yellow to red (580 to 700 nm). However, the light-emitting area a from the substrate 1 side was observed. The light emission wavelength of 2 changes the intensity of yellow and red according to the composition of A 1 — Γ η. That is, the yellow light emission intensity increases with the increase of A 1 composition, and the intensity ratio of red increases with the increase of I η composition. According to the situation, the wavelength measured by color luminance changes from color to red. As described above, the light-emitting diodes of the photoelectric conversion function elements according to the aforementioned first to fourth embodiments have a transposition density existing at the pn junction interface. Or etch pit dense And the density of the precipitates is low, so the leakage current formed by recombination is reduced, and light can be emitted with good efficiency. However, the P-type Z η T e substrate is not limited to the case of doping P as in the foregoing embodiment, and As, Sb are added. It is also possible to wait for group 15 (5B) group elements or group 11 (1B) group Cu, Ag, Au, etc. In addition, it is also possible to replace the P-type ZnTe substrate with an η-type ZnTe substrate. In this case, if 13 (3B) is added Family of Al, Ga,

An element such as In or an element such as Cl, Br, or I of Group 17 (7B) may be used. In addition, the substrate material is not limited to Z η T e, and ZnSe or ZnO can be used. In addition, as in the above embodiment, it is not necessary to vaporize a diffusion source on the surface of the substrate, for example, to place an element that can change the conductivity type of the substrate or It is a diffusion source containing the element, and then the element or the diffusion source is heated, and a gas containing the element to be diffused is supplied to the surface of the substrate, and the paper size is adapted to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling out this page) -0 ^ ---- Order --------- Line One. -33- Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4633 91 A7 ___B7 _ 5. Description of the invention (31) The thermal diffusion is also possible. (Fifth Embodiment) With reference to FIGS. 1 and 2, a p-type ZnTe substrate is used, and a diffusion source is vaporized on the surface of the substrate. The diffusion source is used to diffuse heat into the substrate to form a ρη junction, and an electrode is provided. And the method of making photoelectric conversion function element. The substrate 'is, for example, a Z η T e single crystal substrate doped with P and having a carrier concentration of 3 X 1 0 17 / c m3. The polished substrate was degreased with acetone and then washed with ultrapure water. Thereafter, the substrate 1 was etched with a 2% Br-methanol solution for 5 minutes, washed with ultrapure water, and then installed in a vacuum evaporation apparatus. Evacuate the vacuum evaporation device to a vacuum of less than 2 X 1 0rr. For example, A1 and Si are vaporized on the surface of the substrate at a thickness of 1000 ~ 10000A. Ideally, it is vaporized at 150 °. 5000A thickness as a diffusion source 2. This diffusion source 2 has defects that prevent the formation of a compensation table during the diffusion process. Defects (voids, or defects containing voids) at a level different from the conductivity type (ρ type) of the substrate 1 (n-type). ) Effect, and the effect of impurities on the surface of the gas collection substrate (for example, at least one of 0, Li, Ag, Cu, and Au). However, here, the diffusion source 2 is a substance composed of A 1 and S i ′, but is not limited thereto. Instead of A 1, G a, I η or an alloy containing these, and Cl, Br, I, or It may be an alloy containing these. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (please read the precautions on the back before filling this page) co -34-463391 A7 B7 V. Description of the invention (32) In addition, instead of the aforementioned Si, B (boron) and C (carbon) can also be used. (Please read the precautions on the back before filling in this page) In addition, the diffusion temperature is the ratio of the combined free energy (G = F + PV: thermodynamic characteristic function) formed by the elements constituting the diffusion source 2 and the impurities in the substrate 1 The free energy of the combination of the constituent elements of the substrate 1 and the impurities in the substrate 1 is still small, so that the diffusion source 2 is formed. In addition, the element (for example, S i) of the aforementioned diffusion source 2 contained in the impurities in the gas-receiving substrate 1 must be in a condition other than the element (for example, A 1) which converts the aforementioned substrate 1 of the first conductivity type into the second conductivity type. The element with a slower diffusion rate in the substrate, namely, does not satisfy this condition, and eventually cannot form a pn junction. The inventors have confirmed through experiments. As a method for evaporating the diffusion source 2, a sputtering method, an impedance heating method, an electron beam method, or the like can be used. Next, the substrate Γ is taken out from the vacuum evaporation apparatus, for example, it is equipped with a reaction tube made of quartz, and it is placed in a soaking zone of a diffusion furnace capable of vacuum evacuation. Then, the inside of the diffusion furnace was evacuated to a vacuum, and then replaced with nitrogen. After repeating this operation several times, the heat treatment was performed under predetermined conditions in a state of nitrogen flow. The conditions of heat treatment printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and the experimental results of the inventors are determined in the range in which the light-emitting element finally formed emits light. That is, a graph showing the relationship between the heat treatment temperature and the diffusion time as shown in FIG. 3 is a relational expression showing the relationship between the diffusion time Υ and the heat treatment temperature T in the range of the heat treatment temperature 3 0 to 7 0 t. Y = 2 X 1 0 5 e X ρ (_ 0. 0 1 8 d) is still a long time specified, you can get good results. -35- This paper size applies to China National Standard (CNS) A4 (210 X 297 Public Love) i633 9 1

V. Description of the invention (33 With this heat treatment, A 1 and S i diffusion layers are sequentially formed as layers of A 1 and S i of the diffusion source 2 by mutual thermal diffusion to form a diffusion layer 3 ′ on the substrate 1 and the diffusion layer. A pn junction interface 4 is formed between 3. Here, 'through experiments by the inventors, after the heat treatment is completed, the above-mentioned diffusion source 2 remains to a predetermined thickness, but it has been confirmed as a necessary condition for the purpose of forming a light-emitting element. In the above embodiment, the thickness of the diffusion source 2 is greater than or equal to 100 μA, and ideally equal to or greater than 3 μA is a necessary condition. Therefore, the heat treatment temperature and the diffusion time during the diffusion are set to satisfy the heat treatment temperature shown in FIG. 3 described above. Relation to the diffusion time, and the diffusion source 2 remains in a predetermined thickness after the diffusion. Then, the substrate 1 subjected to the heat treatment as described above is taken out after cooling, and the Si diffusion layer on the surface is removed by etching. Thereafter, the resist is removed by etching. After the surface is protected by the agent, the back surface is plated with gold as an electrode, and a light-emitting diode serving as a light-converting function is produced. (Sixth Embodiment) A description is given of the photoelectric converter according to the fifth embodiment. The device manufacturing method uses a Z η T e substrate, which vaporizes an A 1 diffusion source on the surface of the substrate, and heat-processes the diffusion source under different conditions to diffuse into the substrate to form a P η junction. The photoelectric conversion function element produced. The substrate 1 adopts the ρ type with a carrier concentration of 5 X 1 017 / cm3. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) IU -------- --- r ^ -------- Order --------- line ο. c Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs- 36- 463391 A7 __B7______ 5. Description of the invention (34) {Please read the note on the back before filling the page) Zn η T e single crystal substrate. The polished substrate was degreased with acetone, and then washed with ultrapure water. Thereafter, the substrate 1 was etched with a 2% Br-methanol solution for 5 minutes, washed with ultrapure water, and then installed in a vacuum evaporation device, and the vacuum evaporation device was vacuumed to 2 X 1 0_6T 〇rr or less. A1 is vaporized with a thickness of 4000 A as a diffusion source 5. Then, the substrate 1 is taken out from the vacuum evaporation apparatus and placed in a soaking zone of a diffusion furnace (Rapid Thermal Anneal Furnace). After the inside of the diffusion furnace was evacuated to a vacuum, it was replaced with nitrogen. After repeating this operation several times, heat treatment was performed under the conditions shown in Table 2 while nitrogen was flowing. After cooling, the substrate 1 was taken out, and the surface and the side on which A 1 was vapor-deposited were coated with a resist, and the surface on which the A 1 was vaporized and the side opposite thereto were electroplated with gold as an electrode by electroless plating. Then, in order to obtain the resistivity of the Z η T e substrate and gold, heat treatment was performed at 200 ° C for 5 minutes to produce a light-emitting diode that functions as a photoelectric conversion element. The electroluminescence of the light-emitting diode produced in the above manner was observed using a potentiostat, and the results are shown in Table 2. 〈Table 2〉 Relationship between printing heat treatment conditions and electroluminescence of employees' cooperatives in the Intellectual Property Bureau of the Ministry of Economic Affairs, heating temperature time, light time, light time, light time (° C) (minutes) (minutes) (minutes) 600 2 X 4 〇10 〇650 1 X 1.5 〇5 〇700 0.167 (10 seconds) X 0.5 〇1 〇〇: Luminous X: Non-luminous The paper size is applicable to the national standard (CNS) A4 specification (210 X 297 mm> -37- Economy Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau 463391 A7 __B7_ V. Invention Description (35) That is, when the heating temperature is 60 ° C, it will not emit light after 2 minutes of heat treatment, and after 4 minutes and 10 minutes of heat treatment, In addition, when the heating temperature is 650 ° C, it does not emit light after 1 minute heat treatment, and it emits light after 1.5 minute and 5 minute heat treatment. In addition, when the heating temperature is 7 0 0 ° C, 0 The heat treatment for 16 minutes (about 10 seconds) does not emit light, and the heat treatment for 0.5 minutes and 1 minute emits light. However, the emitted colors are green and yellow, and light is emitted unevenly in the plane. In addition, Measurement of I-V characteristics Further, the thickness of the η-type A 1 diffusion layer measured by the EB IC method is 1 to 2 // m. (Seventh embodiment) The description is in the sixth embodiment, and it is evaporated with a thickness of 2 〇 〇 〇 A A 1 diffusion source is a photoelectric conversion element manufactured under the conditions shown in Table 3. However, the order of substrate cleaning and electrode formation is the same as that of the sixth embodiment. Observe using a potentiostatic device in this way The results of the electroluminescence of the light-emitting diodes are shown in Table 3. (Please read the note ^^ on the back before filling this page) 1 /.-装 -------- Order ·- ------ Line · This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -38- 463391 A7 ___B7 V. Description of the invention (36) <Table 3> _ Heat treatment conditions and electricity The relationship of electroluminescence heating temperature time luminous time luminous time luminous __ (° C) (minutes) (minutes) (minutes) 300 480 X 960 04040 040 400 60 〇150 〇480 〇500 15 X 30 〇60 〇〇: Luminous X: non-luminous, that is, when the heating temperature is 300 ° C, it will not emit light after heat treatment for 480 minutes, and after 9 600 Luminescence after 1 minute and 1 40 minutes

Q In addition, when the heating temperature is 400 ° C, light is emitted after heat treatment for 60 minutes, 150 minutes, and 480 minutes. In addition, when the heating temperature is 500 ° C, it does not emit light after heat treatment for 15 minutes, and emits light after heat treatment for 30 minutes and 60 minutes. However, when the light is emitted, the voltage in the forward direction gradually rises to about 3.5 V, and its color is green and yellow. In addition, it is heat treated at 4 0 ° C for 4 80 minutes, compared with 4 0 ° C for 6 The heat treatment at 0 minutes also emits light uniformly. In addition, the I-V characteristic was measured to indicate the rectification characteristic. (Embodiment 8) (Please read the precautions on the reverse side before filling out this page.) The dimensions are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) -39- A7 463391 __B7 ___: _ 5. Description of the invention (37) The description lies in the sixth embodiment, and it is steamed with a thickness of 2 5 〇 〇 A A photoelectric conversion element fabricated by thermally diffusing I η as a diffusion source under the conditions shown in Table 4. However, substrate cleaning and electrode formation are the same as in the sixth embodiment. The electroluminescence of the light-emitting element produced in this manner was observed using a potentiostat, and the results are shown in Table 4. <Table 4> Relationship between heat treatment conditions and electroluminescence Heating temperature time Luminous time Luminous time | Luminous fc) (minutes) (minutes) (minutes) 300 480 X 960 〇1440 〇400 60 X 150 〇480 〇500 15 X 30 〇〇〇〇〇: Luminous X: No light, that is, the temperature conditions of 300 ° C, the heat treatment for 480 minutes will not emit light 'heat treatment for 960 minutes and 1440 minutes will emit light. In addition, under a temperature condition of 400 ° C, it does not emit light after heat treatment for 60 minutes, and emits light after heat treatment for 150 minutes and 480 minutes. In addition, under the temperature condition of '50 ° C, no light emission is caused by the heat treatment for 15 minutes' and the light emission is obtained after the heat treatment of 30 minutes and 60 minutes. However, the emitted color is yellow. This paper size applies to China National Standard (CNS) A4 specifications &lt; 210 X 297 mm) (Please read the precautions on the back before filling this page) Agriculture -------- Order II -------- -Line "Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -40-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 463391 KK ______ Β7 _____ V. Description of the Invention (38) In addition, the I-V characteristic is measured to indicate the rectification characteristics. (Ninth Embodiment) A description will be given of a sixth embodiment in which a photoelectric conversion functional element is prepared by vaporizing I η with a thickness of 20 OO A as a diffusion source and subjecting it to thermal diffusion under the conditions shown in Table 5. However, the order of substrate cleaning and electrode formation is the same as that of the sixth embodiment. The electroluminescence of the light-emitting element produced in this manner was observed using a potentiostat, and the results are shown in Table 5. <Table 5> Relationship between heat treatment conditions and electroluminescence Heating temperature time Luminous time Luminous time Luminous (° c) (minutes) (minutes) (minutes) 550 5 X 10 〇60 〇650 1 X 1.5 〇5 〇700 0.167 X 0.5 〇1 〇〇: Luminous X: Non-luminous, that is, when the heating temperature is 550 ° C, it does not emit light after 5 minutes of heat treatment, and emits light after heat treatment of 10 minutes and 60 minutes. In addition, when the heating temperature is 650 ° C, it does not emit light after 1 minute of heat treatment, and emits light after 1.5 minutes and 5 minutes of heat treatment. In addition, when the heating temperature is 700 ° C, it takes 0.167 minutes (this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm)) (Please read the precautions on the back before filling in this (Page) ------ Order --------- Line 1 °. -41-A7 4633 91 B7_ V. Description of the invention (39) About 10 seconds) The heat treatment will not emit light, after 0 · The heat treatment for 5 minutes and 1 minute emits light. However, the colors emitted are green and red. In addition, the I-V characteristics were measured to indicate the rectification characteristics. According to the aforementioned fifth to ninth embodiments, the diffusion source disposed on the substrate surface prevents the formation of a defect indicating a level of conductivity different from the conductivity type of the substrate during the process of compensating diffusion, and further suppresses the self-compensation effect to trap impurities on the substrate surface. At the same time, the purity of the crystal surface can be improved, and the conductivity type of the Π-VI compound semiconductor, which caused difficulties in the past, can be suppressed, and the light-emitting element can be manufactured stably. (Tenth Embodiment) A substrate in which a ZnTe semiconductor single crystal is cut by a (111) Zn plane, a (lll) Te plane, a (001) plane, and a (011) plane will be described, and A 1 is evaporated on the substrate surface. A diffusion source is a photoelectric conversion element manufactured by diffusing the diffusion source into the inside of a substrate to form a pn junction, and providing an electrode. However, the (111) Zn and (111) Te planes that belong to the (1 1 1) plane are discriminated from the surface pits that occur when the sample surface is treated with hydrochloric acid. First, the molten solution is grown into a Zn η T e semiconductor single crystal to form an index density of 5000 / cm or less, and the (111) Zn plane, (lll) Te plane, (〇〇1) plane, and (011) plane are formed. This crystal was cut as a substrate. Secondly, after honing the surface of each sample, a hydrobromide-based etchant (this paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297 mm) l · --------— Cantonese) W -------- Order --------- line ο. (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-42- Ministry of Economic Affairs Printed by the Intellectual Property Bureau employee consumer cooperative 463391 A7 _____B7_ V. Description of the invention (40) For example, hydrobromic acid: 1000m 1/1 + bromine: 5 m 丨 / 1), the surface is removed by several microns. However, etching The agent may be bromine-based 3% bromine-methanol, etc. Thereafter, each sample is housed in a vacuum distillation apparatus, and is evacuated to a vacuum of 2 X 1 0-6 Τ ο I · r or less, using EB ( Electron beam method) heating to a thickness of 1 0 0 0 to 1 0 0 0 〇A, ideally A 1 as a diffusion source is evaporated to the surface of each sample with a thickness of 1 500 0 to 5 0 0 QA However, the diffusion source is not limited to A 1 here. Instead of A 1, Ga, In, or these alloys, Cl, Br, I, or these alloys may be used. Then, A 1 is vaporized on the surface. Each The sample was housed in a diffusion furnace, and thermal diffusion was performed in a nitrogen phase at 16 ° C. for 16 hours. Then, after the aforementioned thermal diffusion treatment, an electroless gold plating solution was used to apply gold plating as an electrode on the back of the sample. Then, alloying heat treatment is performed after gold plating to produce a light-emitting diode as a photoelectric conversion element. For each light-emitting diode produced by using the above-mentioned four kinds of samples (substrates), A remaining on the surface side is left. 1 and the gold plating formed on the back side was applied as an electrode to evaluate the light-emitting characteristics. As a result, a light-emitting diode produced using a substrate having a (111) Te surface has a large leakage current, and only very unusual Small dot-shaped green light emission, the light-emitting characteristics are deteriorated. In addition, a light-emitting diode made of a substrate having other substrate surfaces of (1 1 1) ζ η surface, (001) surface, and (011) surface is used. This paper Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before filling out this page) — / -Installation ------ Order · ----_ Line (- 43- A7 4633 91 _______B7_____ V. Invention Theory (41) Green luminescence can be confirmed on the entire surface, and good luminous characteristics can be confirmed. &Lt; Please read the precautions on the back before filling out this page) (11th embodiment) Description using the (111) Zn surface, And (111) Te plane, (001) plane, and (011) plane respectively cut the substrate of ζ η T e semiconductor single crystal at a cutting angle of 10 degrees, and the A 1 diffusion source was vaporized on the surface of the substrate, so that The diffusion source thermally diffuses into the substrate to form a ρ η junction, and a photoelectric conversion element fabricated by the electrode is provided. However, the (111) Zn plane, the (lll) Te plane, which belong to the (111) plane, are discriminated from the state of surface pits appearing when the surface of the sample is treated with hydrochloric acid, as in the tenth embodiment. First, the molten metal is grown to form a Z η T e semiconductor crystal so that the index density becomes 5000 / cnf or less, from the (lll) Zn plane, the (1 1 1) T e plane, the (〇◦ 1) plane, and (〇1 1) The substrate is cut at a cut angle of 10 degrees on each side. Then, for each sample, a light-emitting diode as a photoelectric conversion element was produced in the same procedure as in the aforementioned 10th embodiment. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs on each light-emitting diode produced by using the four kinds of samples (substrates), A1 remaining on the front side and gold plating formed on the back side were energized as electrodes for evaluation. Luminous properties. As a result, a light-emitting diode produced by using a substrate whose substrate surface is inclined at an angle of 10 degrees from the (111) Te surface has non-light-emitting portions. The light-emitting portion also has weak green light, and the light-emitting characteristics are deteriorated. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -44-4 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 633 9 1 A7 _____B7__ V. Description of the invention (42) In addition, other A light-emitting diode produced by a substrate having a substrate surface inclined at an angle of 10 degrees from the (111) Zn surface, the (00 1) surface, and the (Oil) surface can confirm the green light emission on the entire surface, and it can be confirmed that the light emission characteristics are good. However, the inclination angle is not limited to 10 degrees, and it may be less than 10 degrees. ”In this way, according to the above-mentioned tenth and eleventh embodiments, the manufacturing method of the photoelectric conversion function element limits the orientation of the substrate surface, so that light can be stably manufactured. Light emitting diode with good characteristics. (Twelfth Embodiment) Using a Z η T e substrate, the A 1 diffusion source is vaporized on the surface of the substrate with different thicknesses, and the diffusion source is thermally diffused into the substrate to form a P η junction. Production of photoelectric conversion function elements. First, the molten silicon is grown to form a Z η T e semiconductor single crystal, and the transposition density is set to not more than 5 0 O / cnf, which is used as a substrate for the photoelectric conversion element of this embodiment. Next, a few micrometers of the surface of the Z η T e substrate was removed with a bromine-based etchant, and then the substrate was placed in a vacuum evaporation apparatus ° and then heated by EB (electron beam) at 5 nm, 10 nm, and 2 °, respectively. A 1 diffusion source 1 was vaporized with a film thickness of nm, 50 nm, 10 nm, 200 nm, and 50 nm. Next, the substrate with the A 1 diffusion source vaporized on its surface was placed in a diffusion furnace 'to form a ρ η junction in a nitrogen phase at 4 2 ◦ t: diffusion treatment over 16 hours. Here, the diffusion source remains in any sample after the diffusion treatment. (Please read the notes on the back before filling this page)

This paper size is applicable to the national standard (CNS) A4 specification (210 X 297 mm) -45- 4 6 3 3 9 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (43) After diffusion treatment 1 An electroless gold plating solution is used to electroplate gold as an electrode to the side opposite to the surface of the A 1 diffusion source forming the substrate. After gold plating, an alloy heat treatment is performed to produce the light-emitting diode of this embodiment. For each of the fabricated light-emitting diodes, the light emission obtained through the A 1 diffusion source was observed, and the results are shown in Table 6 = A 1 film thickness (nm) green light emission yellow light emission 5 ◎ A 10 ◎ △ 2 0 ◎ Δ 5 0 〇〇1 0 0 Δ 〇2 0 0 Δ 〇5 0 0 Δ 〇 Green, light-emitting diodes produced by vaporizing the A 1 diffusion source with a film thickness of 5, 10, 20, 50 nm were observed. . In particular, light-emitting diodes produced by vaporizing the A 1 diffusion source with a film thickness of 5, 10, and 20 nm can visually recognize strong and stable green light. On the other hand, light-emitting diodes produced by vaporizing the A 1 diffusion source with a film thickness of 100, 200, and 500 nm have relatively stronger yellow light than green light. In addition, compared with the case of light-emitting diodes manufactured at 5'10, 20, and 50 nm, the current emission is reduced. The overall light emission of this paper applies the Chinese National Standard (CNS) A4 standard (210 x 297 mm). (Please read the business matters on the back before filling in this page) 'Installation -------- Order --------- line &0; rp 4 6 3 3 9 1 A7 ___B7___ V. DESCRIPTION OF THE INVENTION (44) The strength is also reduced. The invention of the present inventors' has been specifically described based on the embodiments, but the invention is not limited to the foregoing embodiments. For example, E-VI compound semiconductor crystal substrates can be expected to have the same effect even if Z n Se or Z η 0 is used. The same effect can be expected from a diffusion source such as Ga or I η or an alloy of these. (Thirteenth Embodiment) A description will be given of using a substrate of Zn η T e having a different carrier concentration, evaporating an A 1 diffusion source on the surface of the substrate, and thermally diffusing the diffusion source into the substrate to form a P η junction. Fabricated photoelectric conversion functional element. First »Melt growth Z η T e The semiconductor single crystal makes the index density less than 5 0 0 / C m. This substrate is used as the substrate of the photoelectric conversion functional element in this embodiment. At this time Add the quantified .. Z η 3 Ρ ί: (zinc phosphide) as a dopant &gt; The carrier concentration of the Z η T e crystal is 7 X 1 0 1 (1 X 1 0 1 7, 3 X 1 0 1 7 5 XI 0 1 7 9 X 1 0 1 1 r 2 X 1 0 1 8 5 X 10 &quot;, 7 XI 0 1 8 Here, the amount of Z η3P2 added to Z η T e can be adjusted to become the desired carrier Concentration. For example, adding 10 mg of Zn n3P3 to Z η T e 5 4 0 mg can make the carrier concentration 5 x 1 017cm-3. However, the number of the carrier concentration is based on the use of 4 terminals after crystal growth. Measured 其次 Next, after honing the surface of each substrate, use a bromide-based etchant (谙 read the note on the backside before filling in this page) 'installation ---- --- -Order --------- 4, ^. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with China National Standard (CNS) A4 (210 X 297 mm) -47- 4 6 33 9 A7 B7 5. Description of the invention (45) For example, hydrobromic acid: 10 (Dml / l + bromine number: 5ml / l), remove a few microns of the surface. However, the etchant is 3% bromine of bromine One methanol, etc. is acceptable. Thereafter, each sample is housed in a vacuum evaporation device, and the vacuum is evacuated to a vacuum degree below 2 XI 0-6 Torr, and heated to a thickness of 150 nm by EB (electron beam method). A 1 as a diffusion source was evaporated on the surface of each substrate. Then, each sample with the A 1 diffusion source vapor-deposited on the surface was stored in a diffusion furnace in a nitrogen phase at 16 ° C. for 16 hours. Thermal diffusion. Then, after the aforementioned thermal diffusion treatment, an electroless gold plating solution is used to apply gold plating as an electrode on the surface of the substrate. After gold plating, alloying heat treatment is performed to produce As the light-emitting diode of this embodiment. In this way, the light-emitting characteristics were evaluated for each of the light-emitting diodes produced as described above by using the A1 diffusion source remaining on the front side and gold plating formed on the back side as electrodes. As a result, the green light emission of the light-emitting diode produced using a substrate having a carrier concentration of 7X1016 and 7xl018 cm-3 was not observed under room light. In this regard, light-emitting diodes made of substrates with a carrier concentration of 1 X 1 0 1 7, 3X1017, 5xl017, 7X1017, 9X1017, 2X1018, 5xlOi8cm-3 can be observed under room light. In particular, light-emitting diodes made of substrates with a carrier concentration of 3xl017, 5xl017, 7x1017, 9X 1017, and 2X1018 have an increased intensity and emit stable green light. (Please read the Italian notice on the back before filling in this page) Λ; 'Packing ------------ Order ------------ ~ Line _ Printed by the Intellectual Property Bureau Staff Consumer Cooperatives of the Ministry of Economic Affairs The paper size applies the Chinese national standard &lt; CNS) A4 specification (210 X 297 mm) -48- 463391 A7 __B7__ V. Description of the invention (46) In this way, according to the foregoing embodiment, the carrier concentration is 1 X 1 017 ~ 5X 1 018cm — 3 substrates, can produce photoelectric conversion functional elements with good light emitting characteristics. f Please read the business matters on the reverse side before filling out this page.) Above, the invention issued by the inventors has been specifically explained according to the embodiments, but the invention is not limited to the foregoing embodiments. The substrate is a H-VI compound crystal substrate such as Z n Se or Z η 0, and the same effect can be expected. The same effect can be expected for a diffusion source, such as Ga or I η or an alloy thereof. (14th embodiment) The use of a Z η T e substrate is described, and an A 1 diffusion source is vaporized on the surface of the substrate. The diffusion source is thermally diffused into the substrate at different depths to form a P η electrode. Production of photoelectric conversion function elements. First, a single-crystal Z η T e semiconductor single crystal is melt-melted so that the index density becomes less than 500 O / cni. This substrate is used as a substrate for the photoelectric conversion element of this embodiment. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Secondly, after honing, remove a few micrometers on the surface with a hydrobromic acid etchant (for example, hydrobromic acid: 100ml / l + bromine: 5ml / l). Thereafter, each substrate is housed in a vacuum evaporation apparatus, and the vacuum is evacuated to a vacuum degree of 2 X 10 to 6 Torr or less. The substrate is heated by EB (electron beam method) to a thickness of 1000 to 10000 A, and preferably 1 With a thickness of 500 to 5000 A, A 1 as a diffusion source is deposited on the surface of the substrate. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -49-4 633 9 1 A7 B7 V. Description of the invention (47) Secondly, the substrate on which the A 1 is steamed on the surface shall be accommodated and diffused. The furnace performs thermal diffusion in a nitrogen phase at 6 conditions of 4 0 ° C, 0.5 hours, 2 hours, 8 hours, 16 hours, 32 hours, and 72 hours. For this reason, ρ η junctions can be formed at six kinds of diffusion depths. Then, after the aforementioned thermal diffusion treatment, the surface of each substrate was subjected to gold plating as an electrode using an electroless gold plating solution. Furthermore, an alloying heat treatment is performed after gold plating to produce a light-emitting diode as a photoelectric conversion element. For each of the six types of light-emitting diodes manufactured as described above, A1 remaining on the front side and mineral gold formed on the back side were used as electrodes to evaluate the light-emitting characteristics. The results are shown in Table 7. . 〈Table 7〉 Diffusion constant 5 · 02 × 10〃3 (420 ° C)

Diffusion time (time) Diffusion time (seconds) Diffusion distance U m) Luminous characteristics 0.5 1800 0.30 Δ 2 7200 0.60 〇8 28800 1.20 ◎ 16 57600 1.70 〇32 115200 2.40 X 72 259200 3.61 X However, the position of the bonding interface is Diffusion distance, using S Ε (secondary electron microcope), observe each light-emitting diode (谙 Please read the precautions on the back before filling this page), -------- Order --------- -Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) -50- 463391 A7 B7__ 5. Description of the invention (48) The cut-away surface of the substrate, It is specified according to the density of the S EM image. From Table 7, the diffusion distance is in the range of 0.3 to about 2.0 μm (that is, the diffusion time is 5 hours, 2 hours, 8 hours, and 16 hours). Green light emission can be confirmed, and the light emission intensity seems to be good. However, the center wavelength of the light emission is 550 to 570 nm. In addition, the diffusion distance exceeds the range of 2.0 V m (that is, when the diffusion time is 32 hours and 72 hours), green light emission cannot be observed. As such, the diffusion distance is limited to 0.3 to about 2.0 Range, and a light emitting diode with a relatively low emission intensity can be obtained. However, this embodiment illustrates an example in which A 1 is diffused into the Z η T e substrate, but the substrate or the diffusion source is not limited to these. The substrate is an n_VI substrate such as Z n Se or Z nO, and the same effect can be expected. A diffusion source such as Ga or I η or an alloy thereof can also expect the same effect. (15th embodiment) The use of Z η T e to vaporize an A 1 diffusion source on the surface of the substrate, and to thermally diffuse the diffusion source into the substrate at different depths to form a P η junction, set electrodes, and cut A photoelectric conversion device manufactured by cutting into sections so that the ρ η joint surface is not exposed to the cut surface. First, the melt is grown into a Z η T e semiconductor single crystal so that the transposition density is not more than 5 0 0 / c π. This substrate is used as the substrate of the photoelectric conversion element of this embodiment. This paper size applies to China National Standard (CNS) A4 specifications &lt; 210 X 297 mm) (Please read the precautions on the back before filling this page) J / Crack -------- Order ----- ---- Line-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 463391 ____B7__ V. Description of the invention (49) Honing the substrate with a hydrobromic acid etchant (for example, hydrobromic acid -100ΓΠ1 / 1 + Mo: 5ml. / 1) After removing several micrometers on the surface, wash with ultrapure water. Then, a steaming mask is formed on the surface of the substrate to form a plurality of 280-angle holes. The interval between the first four corner holes of this mask is, for example, 40, and is set to be twice the width of the cutting saw blade as a cutting means used when cutting the substrate into slices. Next, the substrate provided with this mask was housed in a vacuum, and was evacuated to a vacuum of 2 × 10_6 Torr or less, and heated by EB (electron beam method) to a thickness of 15 nm to vaporize A 1 as a diffusion source on the surface of the substrate. At this time, A 丨 was steamed only in a certain part of the opening of the mask (holes with an angle of 280 β m), and a portion where A140 / zm width was not steamed was formed around the steamed portion of A 1. Then, the substrate with A 1 partially vaporized on the surface was housed in a diffusion furnace, and thermal diffusion was performed in a nitrogen phase at 4 ° C. for 16 hours. Then, after the aforementioned thermal diffusion treatment, the surface on which the A 1 was vapor-deposited was protected with a resist, and gold plating was applied to the back surface of the substrate using an electroless gold plating solution. After the gold plating, an alloying heat treatment is performed to form an electrode. Thereafter, a dicing saw (blade thickness of about 20 em) was used as a cutting means, and the substrate was cut into a plurality of slices through a portion on the substrate surface where the width of A140 # m was not vaporized to obtain a photoelectric conversion function element. Of light-emitting diodes. At this time, when the cut surface of each slice was observed with S EM, it was confirmed that the shade corresponding to the ρ η junction did not appear, and the ρ η junction interface was not exposed to the cut surface. This paper size applies to Chinese national standard (CNS &gt; A4 size (210 X 297 mm) (Please read the precautions on the back before filling out this page)) ------------ Order --------- Line: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-52- 4633 9 1 KI _____ Β7 V. Description of the Invention (50) Then, for each light-emitting diode that is sliced, the A 1 and the gold plating formed on the back side is used as the electrode to energize, and (please read the precautions on the back side and then fill out this page> to evaluate the current-voltage characteristics. As a result, it has been confirmed that the amount of leakage current has not changed, which can effectively reduce the dielectric Leakage current flowing through the ρ η junction interface. For comparison, in the aforementioned substrate, the current-voltage characteristic was similarly evaluated for a slice cut off slightly from the middle of the 280 angle of A 1, and it was confirmed that The amount of leakage current is increased by more than one digit after slicing than before slicing. However, in this case, since the layer where P η is bonded can be confirmed on the cut surface of the slice, it is presumed that the leakage current increases as shown above to expose the cut surface. P η junction interface Affected "From the above results, according to the manufacturing method of this embodiment, when the light-emitting diode is sliced into slices, the state where the ρ η junction interface does not exist on the cut surface can effectively reduce the leakage current. However, it is possible to stably manufacture light-emitting diodes with improved luminous efficiency. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. However, in this embodiment, A 1 is diffused to the Z η T e substrate, but the substrate or the diffusion source is not Not limited to this, the same effect can be expected using a Π-VI substrate such as Z n Se or Z η ◦ as a substrate. In addition, as a diffusion source, for example, Ga or I η or an alloy of these may be used. The same effect is expected. [Industrial utilization possibility] As mentioned above, the photoelectric conversion function element of the present invention is suitable for light emission. The size of the paper is applicable to China National Standard (CNS) A4 (210 X 297 mm) -53- 463391 A7. _____B7____ V. Description of the invention (51) Polar body, others can be used as laser diodes, other photoelectric conversion functional elements, especially suitable for conductive control Difficult α _νι compound semiconductor crystal substrates can stably manufacture photoelectric conversion functional elements with excellent light emitting characteristics. F τ ------------ V; .installation -------- Order --------- line O '&lt; please read the notes on the back before filling out this page) Printed on the paper by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper applies Chinese National Standard (CNS) A4 specifications (210 X 297 mm) -54-

Claims (1)

463391 Α8 Β8 C8 D8 六 、 Application for patent scope 1 A photoelectric conversion function element is for the use of Group 12 (2B) and Group 16 (6B) elements of the periodic table &lt; Please read the note on the back first Please fill in this page again) Photoelectric conversion function element of compound semiconductor crystal substrate; It is characterized by adopting a substrate with lower index density or density of precipitates, and thermal diffusion of the first mold-forming type from the substrate surface The substrate is converted into a second conductivity type element to form a pn junction, and electrodes are formed on the front and back surfaces of the substrate. 2. If the photoelectric conversion function element of item 1 of the patent application scope 'wherein the above-mentioned substrate has an index density of 20000 / crrf or less' or an aqueous sodium oxide solution at 90 ° C to 130 ° C The density of the pits obtained by etching the substrate is not more than 2000 / cnf. 3. The photoelectric conversion function element according to item 1 or 2 of the scope of patent application, wherein the density of precipitates at the aforementioned P η junction interface is 50000 pieces / c π or less. 4. The photoelectric conversion function element according to item 1 or 2 of the scope of patent application, in which the interface of the aforementioned P η junction is printed at a magnification of 100 ~ 2 0 0 with the optical microscope printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The density of the precipitates with a particle size of 0.3 to 10 in the focal field can be observed is 10,000 / c ≤ 5 d. For example, the photoelectric conversion function element in the scope of patent application No. 1 or 2 The substrate is formed of ZnTe, ZnSe or ZnO. 6 ·: If the photoelectric conversion function element of the first or second patent application scope, wherein the wavelengths of the light generated from the light-emitting areas on both sides of the aforementioned P η junction interface are different, respectively. 7 For the photoelectric conversion function element in the scope of application for patent No. 6, the paper size of this paper applies to Chinese National Standard (CNS) A4 (210 X 297 mm) -55- 4633 9 1 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 CS 'D8 6. In the scope of the patent application, the aforementioned substrate is P-type Z η T e, and the aforementioned diffusion source is A 1, Ga, I η or a P η junction interface formed when these alloys are contained, and The light generated from the light-emitting area on the diffusion source side is green light to red light with a wavelength of 5 50 nm to 7 0 nm, and the light generated from the light-emitting area on the substrate side is from 5 8 0 to 7 0 0 yellow light to red light. .8 «. —A method for manufacturing a photoelectric conversion element is directed to a compound semiconductor crystal substrate formed by using Group 12 (2B) elements and Group 16 (6B) elements of the periodic table. The substrate of the first conductivity type is converted into a diffusion source of the elements of the second conductivity type. A heat treatment is performed on the diffusion source to form a ρ η junction by thermal diffusion, and the photoelectric conversion function element forming electrodes on the front and back sides of the substrate is formed. The manufacturing method is characterized in that: the diffusion source disposed on the surface of the substrate is an element containing gas that prevents formation of a defect that compensates for the level of impurities in the substrate formed by the elements contained in the diffusion source during the diffusion process; Impurities made of elements on the substrate surface. 9. The manufacturing method of the photoelectric conversion function element according to item 8 of the scope of the patent application, wherein the defect of compensating the impurity level formed by the element contained in the aforementioned diffusion source in the aforementioned substrate is a hole or a defect containing the hole 1 0 t. If the method for manufacturing a photoelectric conversion function element according to item 8 or 9 of the scope of patent application, the diffusion source arranged on the surface of the aforementioned substrate is based on the temperature of the diffusion treatment, the combination of the diffuser and the compound bound to the impurity. Free energy ratio is a combination of the constituent elements of the aforementioned substrate and impurities. The paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) -56- 463391 B8 C8 D8 VI. The patent application refers to the combination of an element with a small free energy or a substance containing the element. 1 1. The method for manufacturing a photoelectric conversion function element according to item 8 or 9 of the scope of the patent application, wherein the aforementioned diffusion source is Al, Ga, In, or an alloy thereof. 12. The method for manufacturing a photoelectric conversion functional element according to item 8 or 9 of the scope of patent application, wherein the aforementioned diffusion source is Cl, Br, I, or an alloy thereof. 1 3 .. According to the method for manufacturing a photoelectric conversion function element according to item 8 or 9 of the scope of the patent application, the element of the aforementioned diffusion source containing impurities in the substrate is converted from the aforementioned substrate of the first conductivity type to the second The conductive element has a slow diffusion rate in the aforementioned substrate. 14. The method for manufacturing a photoelectric conversion function element according to item 8 or 9 of the scope of patent application, wherein the aforementioned impurities are at least one of 0, Li, Ag, Cu, and Au. 15 The method for manufacturing a photoelectric conversion function element according to item 13 of the scope of the patent application, wherein the element of the aforementioned diffusion source containing impurities in the aforementioned substrate is at least one of B, Si, and C. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) 1 6 If the method of manufacturing the photoelectric conversion function element of the patent application scope No. 8 or 9 'where the aforementioned diffusion source, sputtering One of the methods, the resistance heating method, and the electron beam method, is vapor-deposited on a substrate surface in a vacuum. 17. For the manufacturing method of the photoelectric conversion function element according to item 8 or 9 of the scope of patent application, wherein the heat treatment temperature of the diffusion is 300 ° t: ~ 700 ° C. 1 8 .. If the photoelectric conversion function paper size of item 8 or 9 of the scope of patent application is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -57- 8888 ABCD 463391 6. The manufacturing method, wherein the thickness of the diffusion source before the heat treatment is 1000 A to 10000 A, and preferably 1500 A to 5 0 0 0 A. 19 According to the method for manufacturing a photoelectric conversion functional element according to item 18 of the patent application scope, wherein the aforementioned diffusion source is left on the substrate surface with a predetermined thickness after the aforementioned heat treatment is completed. .2 0. For the method for manufacturing a photoelectric conversion function element according to item 19 of the patent application scope, wherein the residual thickness of the aforementioned diffusion source and diffusion layer is higher than 100A, ideally higher than 300A. 2 1? The method for manufacturing a photoelectric conversion function element according to item 20 of the scope of patent application, wherein the aforementioned diffusion source is A 1 or I η; the relational expression Y = 2 is the relationship between the diffusion time Υ and the heat treatment temperature T. X 1 05 e X ρ (_ 0. 0 1 8 T) is heat-treated on the condition that the diffusion time is long. 2 2. If the method for manufacturing a photoelectric conversion function element is applied for item 8 or 9 of the scope of patent application, wherein the aforementioned substrate is ZnTe. 2 3 — A method for manufacturing a photoelectric conversion function element is a compound semiconductor crystal substrate formed by using Group 12 (2B) elements and Group 16 (6B) elements of the periodic table. A method for manufacturing a photoelectric conversion element in which the aforementioned conductive substrate is converted into a diffusion source of a second conductive element, and heat treatment is performed on the diffusion source to form a pn junction by thermal diffusion to form electrodes on the front and back surfaces of the substrate; It is characterized in that: after etching, the above-mentioned expansion paper size is arranged on the substrate surface having a flat surface orientation, and the Chinese national standard (CNS) A4 specification (210 X 297 mm) is applied (please read the precautions on the back before filling (This page) ------ II Order -------! Line _ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-58- 463391 A8 CBS8 ____ D8 6. The scope of patent application is diversified. 2 4 If the method of manufacturing a photoelectric conversion function element according to Item 23 of the scope of the patent application 'is used, the substrate is one of ZnTe, 2 n S e, and Zn η Ο. 25. If the method for manufacturing a photoelectric conversion function element according to item 23 or 24 of the scope of the patent application, wherein the substrate surface having a flat surface orientation after etching is (111) Zn surface, (001) surface, or (Oil) surface. 26 'If the method of manufacturing a photoelectric conversion function element according to item 2 3 or 24 of the scope of the patent application, wherein the substrate surface having a flat surface plane orientation after the aforementioned etching has a surface from (1 1 1) Zn surface, (001) surface Or, the (0 1 1) plane is inclined at an angle within 10 degrees. 27) The method for manufacturing a photoelectric conversion function element according to item 23 or 24 of the patent application scope, wherein the surface of the substrate is chemically etched before the aforementioned diffusion source is arranged. 2 8. Method for manufacturing photoelectric conversion function element according to item 27 of the scope of patent application, where the aforementioned chemical etching is etching with bromic acid or bromine etchant. 2 9 —Manufacture of a kind of photoelectric conversion function element The method is to use a compound semiconductor crystal substrate formed of Group 12 (2B) elements and Group 16 (6B) elements of the periodic table, and the substrate including a substrate having a first conductivity type to be converted into a second conductivity type is arranged on the surface of the substrate. The diffusion source of the element is subjected to heat treatment, and the thermal diffusion is used to form a pn junction, and the photoelectric conversion function elements forming the electrodes on the front and back surfaces of the aforementioned substrate are manufactured according to the Chinese national standard (CNS) A4 standard. (210 X 297 mm) (Please read the notes on the back before filling out this page) \ '· ^ -------- Order --------- line · Staff of Intellectual Property Bureau, Ministry of Economic Affairs Printed by Consumer Cooperatives-59- A8 B8 4633 9 VI. Application for Patent Scope Method; It is characterized by: The film thickness of the aforementioned diffusion source is 5 nm ~ 50 nm ° 3 0. Manufacturing method of conversion function element, which The film thickness of the aforementioned diffusion source is 5 ηη ~ 2 0 nm ° \ 3 1. For a method for manufacturing a photoelectric conversion device element in the scope of application for patent No. 29 or 30, wherein the processing temperature of the aforementioned thermal diffusion is 3 0 0 C to 5 5 0 0C. 3 2 According to the method for manufacturing a photoelectric conversion function element in the scope of patent application No. 29 or 30, wherein the thermal diffusion processing time is set to a range exceeding a predetermined thickness after the diffusion source is subjected to the diffusion treatment ° 3 3㈧ For example, the manufacturing method of the photoelectric conversion function element of the 29th or 30th scope of the patent application, wherein the aforementioned substrate is one of ZnTe and Z n S e. Z η 0. 34 / The method for manufacturing a photoelectric conversion function element according to item 29 or 30 of the scope of patent application, wherein the aforementioned diffusion source is Al, Ga, ϊη, or an alloy of these. 3 ~ 5 types of photoelectric conversion functional elements are compound semiconductor crystal substrates formed using Group 12 (2B) elements and Group 16 (6B) elements of the periodic table. The surface of the substrate contains the aforementioned first conductive type. A photoelectric conversion element formed by diffusing the source of the substrate into a second conductivity type by subjecting the diffusion source to heat treatment to form a pn junction by thermal diffusion, and providing an electrode on the rain surface of the substrate; Compound semiconductor crystal substrate with a carrier concentration of 1 × 1017cm'3 ~ This paper size is applicable to China National Standard (CNS) A4 (210 χ 297 mm) (Please read the precautions on the back before filling this page) W Order II --------- Line-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-60- 463391 Α8 Β8 C8 D8 VI. Scope of patent application (please read the precautions on the back before filling this page) 3 6 * If the photoelectric conversion function element of item 35 of the scope of application for patent is used, wherein the aforementioned compound semiconductor crystal substrate is doped with elements of Group 15 (5 B) of the periodic table and becomes the desired carrier Degree. 3 7 ♦ If the photoelectric conversion function element in the scope of the patent application No. 35 or 36, the aforementioned substrate is one of ZnTe, ZnSe, 2nO. 38. The photoelectric conversion element of claim 35 or 36, wherein the aforementioned diffusion source is A 1, G a or I η, or an alloy of these. 3 9 a — A type of photoelectric conversion function element, which is a compound semiconductor crystal substrate formed using Group 12 (2B) elements and Group 16 (6B) elements of the periodic table. The substrate is converted into a diffusion source of a second conductivity type element, and the diffusion source is heat-treated, and a ρ η junction is formed by thermal diffusion, and electrodes are formed on both sides of the substrate, and the photoelectric conversion functional element is formed; The depth of the diffusion is set to be more than 0.3 // m from the surface of the aforementioned substrate and less than 2.0 μm. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 Op. For example, the photoelectric conversion function element of item 39 in the scope of patent application, where the center wavelength of the light emission is 5 50 nm to 5 7 nm. 41. For example, the photoelectric conversion function element of item 39 or 40 of the scope of application for patent, wherein the substrate described in item U is one of ZnTe, ZnSe, and ZnO. 4 2: If the photoelectric conversion function element in the 39th or 40th scope of the patent application, the aforementioned diffusion source is A 1, Ga or I η, or this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -61-633 9 1 A8 B8 C8 D8 6. Alloys with some patent applications. (Please read the precautions on the back before filling in this page) 4 3 \ —A type of photoelectric conversion function element, which is a compound semiconductor crystal formed by using Group 12 (2B) elements and Group 16 (6B) elements of the periodic table A substrate is provided on the surface of the substrate with a diffusion source containing an element that converts the aforementioned substrate of the first conductivity type into a second conductivity type, heat treatment is applied to the diffusion source, and ρ η junction is formed by thermal diffusion, and electrodes are provided on both sides of the substrate. The photoelectric conversion function element formed is characterized in that the aforementioned P η junction is partially formed in the central portion of the substrate after diffusion. 44% The photoelectric conversion function element according to item 43 of the patent application range, wherein the aforementioned diffusion source On the surface of the substrate, only a part of the substrate is vaporized to the inside of the substrate at a predetermined distance, and the diffusion source remains as one of the electrodes after thermal diffusion treatment. 4 5. The photoelectric conversion element according to item 43 or 44 of the scope of patent application, wherein the aforementioned substrate is one of ZnTe, ZnSe, and Znη. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 46. For example, the photoelectric conversion function element in the scope of patent application No. 43 or 44, wherein the aforementioned diffusion source is A 1, Ga or In, or these alloys. 47. — A method for manufacturing a photoelectric conversion element is a method for manufacturing a photoelectric conversion element according to item 4 3 or 4 of the scope of patent application; it is characterized in that: at least the substrate is covered by cutting the substrate into photoelectricity. The section passed by the cutting means for converting the functional element is set and configured with the aforementioned paper size applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) -62- 4 6 3 3 9 ι A8 B8 C8 D8 The partially open mask for diffusion in the scope of the patent application passes through the mask 'to partially vaporize the aforementioned diffusion source, to thermally diffuse the aforementioned diffusion source to form a ρ η junction. After forming electrodes on both sides of the substrate, it is to use the aforementioned The portion covered by the mask without being vaporized to the aforementioned diffusion source is sliced into slices of the photoelectric conversion function element by a predetermined cutting method. 4 8. The method of manufacturing a photoelectric conversion function element according to item 47 of the patent application scope, wherein The cutting means is a dicing saw, and the part through which the cutting means of the substrate passes is formed so that the width of the cutting saw blade is greater than 2 times the width. (Please read the Please fill in the truth for the matters needing attention) ... Know --------. Order --------- Line hiding, printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs, this paper is printed in accordance with Chinese national standards (CNS) A4 size (210 X 297 mm) -63-