經濟部中央橾準局員工消费合作社印製 4 6 Ο 6 w ο Α7 Β7五、發明説明（1 ) 技術領域 本發明係關於RF動力推動的電漿增強之化學蒸氣沈 積反應器及執行電漿增強之化學蒸氣沈積之方法。 背景技術 半導體製程經常涉及/或沈積薄膜或薄層於半導體基 板表面上其可有或未有其它層已經成形於其上。一種執行 膜或廣沈積之方式係透過化學蒸氣沈積（CVD)。CVD涉及 氣相化學品或反應物之化學沈積，該化學品或反應物含有 預定沈積於基板或基板表面之成分。反應物氣體被導入反 應腔室或反應器内，及於受熱表面分解及反應而形成預定 膜或層。 現有三大CVD方法可用於形成預定膜或層。包括： 大氣壓CVD(APCVD)，低壓CVD(LPCVD)及電漿增強之 CVD(PECVD)。前二方法（APCVD及LPCVD)係以其壓力為 特徵，典型使用熱能作為能量輸入來執行預定化學反應。 後述方法（PECVD)係以其壓力計畫及能量輸入方法為特徵 -~— 一.·... ' 〇 PECVD系統中，並非依賴熱能來引發與維持化學反 應，RF感應輝光放電用於移轉能量給反應物氣體。如此 可使基板保持於比APCVD及LPCVD系統更低溫。基板溫 度較低於某些情況合所需，原因為若干基板不具有熱穩定 性來接受藉其它方法塗布。其它預定特徵包括沈積速率可 提升，且可生產具有獨特組成及性質之膜或層。此外 PECVD方法及系統提供其它優點，例如黏著性良好，針 訂 線 (請先聞讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 4 經濟部中央揉準扃貝工消费合作杜印装 B7 五'發明説明（2 ) " ' 孔密度低，階遮蓋率良好，電氣性質適當，及與細線圖樣 轉印過程相容》 但沈積處理包括PECVD處理關聯之一問題在於膜或 層遮蓋率不均勻可能特別導致高縱橫比凹凸部，例如沈積 過程中典型發生稱做「麵包捲」或瓣尖問題。此等問題通 常涉及沈積材料非期望地非均勻積聚，而介於基板上之基 本結構間出現如同鎖孔之空間。先前技術解決之道係進盘 多^極薄層沈積且中間介入電漿蝕刻處理。介入之電漿蝕 刻係用來去除或切除尖頭而形成較為均勻的施用層，隨後 重^進行沈積及蝕刻直至達成預定遮蓋率為止β希望改良 PECVD方法及反應器沈精之膜或層品質。 本發明係有關改良PECVD處理系統及方法。本發明 亦係關於改良PECVD系統關聯之優點及特點包括前述優 點及特點。 _圖_式之簡單說明 後文將參照下列附圊描述本發明之較佳具體例。 第1圖為根據本發明之較佳具體例之電漿增強之化學 蒸氣沈積（PECVD)反應器系統之方塊圖。 第2圖顯示用於第1囷系統之較佳PECVD反應器之一 實務。 第3圊顯示用於第1圖系統之另一較佳PECVD反應器 之另一實務。 第4圖顯示用於第1圖系統之較佳功率分配器之一實務 本紙浪尺度適用中國國家標準（CNS ) Α4規格（210.Χ29·?公釐） I---------1------1T------^ {請先«讀背面之注意事項再填寫本頁) 4 6 0 A7 B7 五、發明説明（3 ) 第5圖顯示用於第1圖系統之另一較佳功率分配器之另 一實務。 第6圖為流程圖示例說明用於本發明之較佳具體例之 較佳處理方法。 執行本發明之最佳模式及束發明之谋壬 參照第1圖，電漿增強之化學蒸氣沈積（PE(：VD)反應 系統以方塊圖形式顯示概略於1〇。系統1〇包括一供氣單元 12, 一化學蒸氣沈積反應器14, 一rf功率分配器丨6及一 RF 功率產生器18 〇 供氣單元12可供給一或多種氣態反應物至反應器14用 於根據本發明處理*典型此等系統使用RF感應輝光放電 來移轉能量至反應物氣趙。隨後於放電區内產生自由電子 而其獲取能量’故當其碰撞氣趙分子時，發生反應物氣體 之氣相解離及離子化。如此’能量物種被吸收於工件或基 板上。 經濟部中央橾準局員工消費合作社印装 ----------装— (請先閲讀背面之注意事項再填寫本頁) 線 PECVD反應器14界定一處理腔室或容積，於其内部 進行根據本發明之處理。第一較佳實務中，反應器14包含 平行板反應器。平行板反應器可配置成僅處理單一半導體 工件或晶圓。另外，反應器配置成處理多於一個半導趙工 件或晶圓。第二較佳實務中，反應器14包含電感線圈 PECVD反應器。二較佳實務將於後文就第2及3圖詳細討 〇 仍然參照第1圖，RF功率分配器16於示例說明之較佳 具體例中分配或以其它方式劃分RF輸入功率（該rf輪入功 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） 460 A7 B7 經濟部中央橾準局負工消費合作社印裝 五、發明説明（4 率係由RF功率產生器18產生）成為RF功率組成分，隨後用 來動力推動個別反應器電極。較佳實務中，jb 根 據選定之功率比分配或劃分，選定之功率比可数立乍 員操縱。較佳此種比例非為直接1 : 1之比》此種經過分配 或劃分的功率隨後透過導線或端子15，17施用至各層反應 器14之部分之個別電極，容後詳述。 參照第2图，根據第一較佳實務之PECVD反應器概略 陳述於20 »反應器20較佳包含電容平行板反應器，其可或 可未配置成可處理多於一工件或晶圓。較佳反應器2〇界定 一處理腔室21 ’其包括一第一電極22設置於其内部。電極 22係配置成支撐至少一半導體工件呈半導體晶圓w形式。 此處使用「支撐」一詞於本文件及連同各具體例意圖表示 夹持或定位一或多個半導體工件於預定取向故可進行化學 蒸氣沈積。如此半導體工件可被支撐、夾持或以其他方式 定位成所示水平位置以外之其它方向。此外，雖然本發明 係就僅含二電極之系統内容討論，但須了解本發明之反應 器及方法可用於不一定僅限於二電極之系統。第一電極22 包含第一電極表面積24,晶圓W停靠於第一表面積上用於 根據本發明之製程處理。於示例說明之較佳具體例中，第 一電極22為感受器其可支撐工件。處理腔室21包含第二電 極26其係設置於腔室内部。二電極間存在一間隙，故電極 彼此適當隔開。於示例說明之較佳具體例中，第二電極26 組成蓮蓬頭電極’其係以工作式批鄰感受器，且配置成可 由供氣單元12供給氣態反應物（第1圖）。但氣態反應物可 本紙張適财關家料（CNS }職格⑺Qx297^ 裝 訂 線 (請先聞讀背面之注ί項再填寫本頁) 經濟部中央樣準局貝工消費合作杜印製 4 6 0 b ^ ^ A7 ___B7_ 五、發明説明（5 ) 以其它方式導入反應器内。較佳第二電極26界定第二電極 表面積28，其係與第一電極表面積24不同且較佳較小。換 言之’第一電極表面積24係大於第二電極表面積28。此種 第一與第二電極間之奏J6積差異可使電極僅使用單一 RF 功率源即可發展出RF功率差異。由後文說明顯然易知。 仍然參照第2圖，導線15及17分別工作式連接至第一 及第二電極22，26。此導線連接RF功率產生器18(第1圖） 經由RF功率分配器16之個別電極，RF功率分配器供後文 討論目的係以工作式插置於RF功率產生器與感受器及蓮 蓬頭電極二者間。較佳RF功率產生器18包含單一產生器 功率源，功率源係工作式連結處理腔室且配置成可提供rF 功率給RF功率分配器，而後者又根據選定之功率比提供RF 功率給感受器及蓮蓬頭，容後詳述《如此表示於先前 PECVD反應器之一大新穎差異，後者僅有一蓮蓮頭電極 係藉RF功率源供電，而感受器電極係接地。示例說明之 單一 RF功率產生器較佳配置成可提供RF功率至電極，其 可於處理腔室内部有效發展電漿處理環境及相對於半導體 工件提供預定偏壓。例如維持電極於較佳功率偏差有助於 加速離子或離子物種朝向工件或晶圊，其可促進服貼遮蓋 率，特別於高縱橫比凹凸部時尤為如此。又復，可獲得瞑 或層組成之較為均勻及/或較高純度。 參照第3圖且根據本發明之另一較佳實務’陳述不同 型PECVD反應器30。此種反應器包含感應線圈PECVD。 反應器30包含一處理腔室31，於腔室内部可進行根據本發 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨0X297公釐） ----------^------1T------^ (請先閲讀背面之注意事項再填寫本頁) 經濟部中央揉準局貝工消費合作社印裝 4 6 0 b ^ 6 A7 _ _____ B7 五、發明説明（6 ) 明之化學蒸氣沈積處理。第一電極32係設置於反應器内部 ，且配置成可支撐至少一半導體工件，如晶園从於其上。 第一電極32係藉較佳單_RF功率產生器18供電（第1圖）。 根據本發明可有多於一個待處理晶圊。第士電 於處理腔室31外部，包含複數線圈其可藉同一較佳單—RF 功率產生器供電》 參照第2及3囷，包含pEcVD反應器其包括個別電極 ’二者皆由單一 RF功率產生器或功率源供電。根據第一 實務’二電極係設置於處理腔室内部（第2圖根據第二 較佳實務’至少一電極係設置於處理腔室外部（第3圖）。 較佳實務之二電極皆由單一RF#率產生器如第1圖之功率 產生器18供電。如前述，如此表示與先前pecvD反應器 之新穎差異，後者中二電極並非使用來自共通單一 RF# 率源之RF功率動力推動。 參照第4園，較佳RF功率分配器陳述於3 6。於示例說 明之較佳具體例中，功率分配器36包含變壓器38，其包括 輸入端或一次繞線40及輸出端或二次繞線42。輸入端40係 透過同軸纜線44工作式耦合或連結至rf功率產生器ι8(第 1圖）及接收如此產生之功率β輸出端42包含至少二輸出端 子15，17’其係工作式耦合或連結至第一及第二電極22, 26(第2囷之PECVD反應器）或第一及第二電極32，34(第3 圖之PECVD反應器）。較佳實務中’輸出端含有多於兩個 端子，第一及第二反應器構成由其供給動力之唯一處理腔 室電極。功率分配器36將功率產生器18供給的輸入功率分 本紙張尺度適用中國國家標準（CNS ) Α4規格（2!0Χ297公釐） 9 ----------装-- (請先聞讀背面之注意事項再填寫本頁) 、?τ Α7 _________Β7_ 五、發明説明（7 ) 配成第一及第二功率組成分，其隨後供給個別電極。較佳 變壓器之輸出端根據選定之功率比（容後詳述）供給功率給 第一及第二電極。適當匹配網路46係用於阻抗匹配用途。 此種網路典型包括各種電容及電感組件其配置用於阻抗匹 配。此係以方塊圖形式表示於框46。 經濟部中央標準局貝工消费合作杜印策 根據本發明之一較佳方面，RF功率分配器36包含一 中央分接變壓器，其中供給第一及第二電極之輸出功率幅 度大致相等。當功率分配器36用與第2圖之PECVD反應器 結合使用時此乃合所需。但某些情況下發現供給各電極之 功率比係與電極22, 26表面積24, 28成比例*因此藉由改 變或操縱表面積’可操縱或選擇功率比並影響由此種功率 組成分施用的個別電極「所見」之第一及第二功率组成分 幅度。於示例說明之較佳具體例中，此種表面積彼此不同 ’感受器表面積係大於蓮蓬頭表面積。如此可依據可定義 關係發展出功率差。此種關係係由預定相對幅度組成，該 幅度係與電極表面積之第四次幂之倒數比成正比^換言之 ’藉由改變感受器與蓮蓬頭間之相對表面積比，可執行改 變施加功率。於示例說明之較佳具體例中，第二電極或蓮 蓬頭26之表面積係小於第一電極或感受器22之表面積。如 此導致施加至蓮篷頭之功率幅度比感受器更高。如此優異 地允許被導入腔室21之反應物以較佳方式沈積，使高能物 種被抽取朝向支撐工件之電極方向。 參照第5圊，另一較佳功率分配器概略示於36立。此種 替代較佳功率分配器可獲得預定功率差異而無須考慮電極 ---------------—...___ 10 (請先閲讀背面之注意事項再填客本頁) 本紙張尺度適用中國國家標準（CNS ) A4规格（210X297公釐） 460606 A7 B7 五、發明説明（8 ) 間之表面積比且與表面積比無關，無論該等電極係屬第2 圖之反應器或第3圖之反應器皆如此。若屬適當對所述功 率分配器標示以類似編號，差異係附接「a」或以不同編 號表示。如此功率分配器36a包含輸入端40，其係工作式 輕合RF產生器18(第1圖），及輸出端42a其係工作式轉合較 佳反應器20’ 30中任一者。如此可使第2圈之反應器2〇無 須具有感受器電極及蓮蓮頭電極而其各自之表面積較為接 近相等。功率分配器36a較佳允許選定之功率比係以改變 供給電極之功率之方式調整》如此於示例說明之較佳具體 例中，RF功率分配器包含變壓器有複數二次繞線42a。此 如48指示*可以變化方式接地。 仍然參照第5圖且供舉例說明之用，輸出端42a顯示為 包含九組繞線。經由將不同繞線或線圈選擇性接地，可將 不同功率比供給蓮蓬頭及感受器電極。特別例如若如所示 編號2線圈或繞線接地，則第一電極亦即電極22(第2圖）或 32(第3圖）接收來|功率產生器之2/9或22.2%輸入功率。 如此第二電極亦即電極26(第2圖）或34(第3圊）接收7/9或 77.8°/。輸入功率β相關地，若編號7之線圈或繞線接地， 則功率分布顛倒，亦即第一電極接收7/9輸入功率而第二 電極接收2/9輸入功率。如此供給較佳電極之功率可改變 來配合不同的處理計畫。於示例說明之較佳第5圖具體例 十’功率分配器36a可由終端使用者改變選定功率比調整 來配合不同的處理計畫a此種處理計畫較佳可提供適量功 率給第二電極而非第一電極。另外，供給最接近半導體工 本紙張尺度適用中圉國家揉準（CNS ) A4規格（21〇χ 297公董） I------；--裝---\-I.--tr------0 {請先閲婧背面之注意事項再填寫本頁) 經濟部中央標準局貝工消費合作社印製 11 經濟部中央標準局貝工消費合作社印製 460606 A7 _______B7_五、發明説明（9 ) 件電極之功率係低於供給較遠離工件之電極之功率。 如此已經敘述兩種較佳功率分配器。其中第一種（第4 圖）可優異地產生具有大致相等幅度之輸出功率。此種功 率分配器適合用於反應器，如第2圖之反應器20,其中供 給示例說明電極之最終功率幅度可藉由改變電極表面積比 調整。此種功率分配器也可合併反應器30使用。另外且同 等較佳地功率分配器36a(第5圖）允許輸出功率以變化方式 調整至適合用於反應器如第2圖反應器20之選定功率比， 其中電極可具有或無須具有電極表面積間有意義的變化。 此外’此等功率分配器可且較佳合併第3圖之反應器3〇使 用。 參照第6圖，結合前述反應器使用之處理半導體工件 之較佳方法之代表流程圖概略示於1〇〇。較佳方法包含首 先於步驟110設置一半導體工件於前述PECVD反應器中之 選定者。根據較佳實務，設置感受器用於支撐工件於處理 腔室内部。根據第2圖具體例，蓮蓬頭電極26係設置成工 作式毗鄰感受器，配置成供給氣態反應物之腔室内部。根 據第3圖具體例，反應器電極中之至少一者係設置於腔室 外部。於步驟112 ,氣態反應物供給反應器腔室，此時於 步驟114，供給來自較佳單一或共通RF功率源之RF功率。 於步驟116 ’供給的rf功率劃分為第一及第二功率組成分 ，其選擇性供給前述個別電極。例如於步驟118之第一功 率組成分施加至第一電極。於步驟12〇，第二功率組成分 施加至第二電極。較佳施加之功率組成分與另—組成Printed by the Consumers' Cooperative of the Central Government Bureau of the Ministry of Economic Affairs 4 6 Ο 6 w ο A7 B7 V. Description of the Invention (1) Technical Field The present invention relates to an RF-powered plasma enhanced chemical vapor deposition reactor and a plasma enhanced reactor. Chemical vapor deposition method. BACKGROUND Semiconductor processes often involve / or depositing a thin film or layer on the surface of a semiconductor substrate, which may or may not have other layers already formed thereon. One way to perform film or wide deposition is through chemical vapor deposition (CVD). CVD involves chemical deposition of a gas phase chemical or reactant that contains components that are intended to be deposited on a substrate or substrate surface. The reactant gas is introduced into a reaction chamber or reactor, and is decomposed and reacted on a heated surface to form a predetermined film or layer. Three existing CVD methods can be used to form a predetermined film or layer. These include: Atmospheric Pressure CVD (APCVD), Low Pressure CVD (LPCVD), and Plasma Enhanced CVD (PECVD). The first two methods (APCVD and LPCVD) are characterized by their pressure and typically use thermal energy as an energy input to perform a predetermined chemical reaction. The method described below (PECVD) is characterized by its pressure plan and energy input method-~ ... I. In PECVD system, it does not rely on thermal energy to initiate and maintain chemical reactions. RF-induced glow discharge is used for transfer Energy is given to the reactant gas. This keeps the substrate cooler than APCVD and LPCVD systems. The substrate temperature is lower than necessary in some cases, because some substrates do not have thermal stability to accept coating by other methods. Other predetermined features include increased deposition rates and the ability to produce films or layers with unique compositions and properties. In addition, the PECVD method and system provide other advantages, such as good adhesion and needle stitching (please read the precautions on the back before filling out this page). This paper size applies to China National Standard (CNS) A4 (210X297 mm). 4 Economy The Ministry of Central and South Korea's Central Bank of China's consumer cooperation Du printed B7 five 'Inventory (2) "' Low hole density, good step coverage, proper electrical properties, and compatibility with the fine line pattern transfer process "But the deposition process includes One of the problems associated with PECVD processing is that uneven coverage of the film or layer may particularly cause high aspect ratio bumps, such as what is commonly referred to as "bread rolls" or valve tip problems during deposition. These problems often involve the undesired, non-uniform accumulation of sedimentary materials, with spaces like keyholes appearing between the basic structures on the substrate. The solution of the prior art is to deposit multiple thin layers and interpose plasma etching. Interventional plasma etching is used to remove or cut off the tip to form a more uniform application layer, and then repeat the deposition and etching until a predetermined coverage rate is achieved. Β Hope to improve the PECVD method and the quality of the membrane or layer of the reactor. The invention relates to an improved PECVD processing system and method. The invention also relates to the advantages and features associated with improved PECVD systems, including the aforementioned advantages and features. Brief description of _ 图 _ 式 Hereinafter, a preferred specific example of the present invention will be described with reference to the following appendix. Figure 1 is a block diagram of a plasma enhanced chemical vapor deposition (PECVD) reactor system according to a preferred embodiment of the present invention. Figure 2 shows the practice of one of the preferred PECVD reactors for the 1st system. Figure 3 shows another practice of another preferred PECVD reactor for the system of Figure 1. Figure 4 shows one of the best power dividers used in the system of Figure 1. The paper scale is applicable to China National Standard (CNS) A4 specification (210. × 29 ·? Mm) I --------- 1 ------ 1T ------ ^ {Please «read the precautions on the reverse side before filling out this page) 4 6 0 A7 B7 V. Description of the invention (3) Figure 5 shows the first figure Another practice of another preferred power divider for the system. Fig. 6 is a flowchart illustrating a preferred processing method for a preferred embodiment of the present invention. Refer to Figure 1 for the best mode for carrying out the invention and the invention of the beam invention. The plasma enhanced chemical vapor deposition (PE (: VD)) reaction system is shown in block diagram in outline at 10. The system 10 includes a gas supply Unit 12, a chemical vapor deposition reactor 14, an RF power divider 6 and an RF power generator 18. The gas supply unit 12 can supply one or more gaseous reactants to the reactor 14 for processing according to the present invention. * Typical These systems use RF-induced glow discharge to transfer energy to the reactant gas. Subsequently, free electrons are generated in the discharge area and they gain energy. Therefore, when they collide with gas molecules, gas-phase dissociation of the reactant gas and ions occur. In this way, 'energy species are absorbed on the work piece or substrate. Printed by the Consumer Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs ————————— (Please read the precautions on the back before filling this page) The line PECVD reactor 14 defines a processing chamber or volume within which the processing according to the invention is performed. In a first preferred practice, the reactor 14 comprises a parallel plate reactor. The parallel plate reactor can be configured to process only a single half In addition, the reactor is configured to process more than one semiconducting workpiece or wafer. In a second preferred practice, the reactor 14 includes an inductor PECVD reactor. The second preferred practice will be described later. Figures 2 and 3 are discussed in detail. Still referring to Figure 1, the RF power splitter 16 distributes or otherwise divides the RF input power in the preferred specific example illustrated (the rf wheel-in power is used in this paper and the Chinese standard applies to Chinese standards (CNS) A4 specification (210X297 mm) 460 A7 B7 Printed by the Central Consumers' Bureau of the Ministry of Economic Affairs, Printed by the Consumers Cooperative Cooperative V. Invention description (4 rate is generated by the RF power generator 18) becomes the RF power component, which is then used Power to push the individual reactor electrodes. In the best practice, jb is allocated or divided according to the selected power ratio, and the selected power ratio can be manipulated by several members. The preferred ratio is not a direct 1: 1 ratio. The distributed or divided power is then applied to individual electrodes of parts of each layer of the reactor 14 through wires or terminals 15, 17 and will be described in detail later. Referring to Figure 2, the PECVD reactor according to the first best practice is outlined at 2 0 »The reactor 20 preferably includes a capacitive parallel plate reactor, which may or may not be configured to process more than one workpiece or wafer. The preferred reactor 20 defines a processing chamber 21 ′ which includes a first electrode 22 is provided inside. The electrode 22 is configured to support at least one semiconductor workpiece in the form of a semiconductor wafer w. The term "support" is used herein and in conjunction with the specific examples to indicate holding or positioning one or more semiconductors The workpiece can be chemically vapor-deposited in a predetermined orientation. Thus, the semiconductor workpiece can be supported, clamped, or otherwise positioned in a direction other than the horizontal position shown. In addition, although the present invention is discussed in terms of a two-electrode system However, it must be understood that the reactor and method of the present invention can be applied to a system that is not necessarily limited to two electrodes. The first electrode 22 includes a first electrode surface area 24 on which the wafer W rests for processing in accordance with the present invention. In the preferred embodiment, the first electrode 22 is a susceptor which can support a workpiece. The processing chamber 21 includes a second electrode 26 which is disposed inside the chamber. There is a gap between the two electrodes, so the electrodes are properly spaced from each other. In a preferred specific example, the second electrode 26 constitutes a showerhead electrode, which is a working batch sensor and is configured to be supplied with a gaseous reactant by the gas supply unit 12 (Fig. 1). However, the gaseous reactants can be used in this paper (CNS) post code ^ Qx297 ^ binding line (please read the note on the back first and then fill out this page) Printed by the Central Bureau of Procurement, Ministry of Economic Affairs. 6 0 b ^ ^ A7 ___B7_ 5. Description of the invention (5) is introduced into the reactor in other ways. The preferred second electrode 26 defines a second electrode surface area 28, which is different from the first electrode surface area 24 and is preferably smaller. In other words, 'the surface area of the first electrode 24 is greater than the surface area of the second electrode 28. This difference in J6 product between the first and second electrodes allows the electrode to develop RF power differences using only a single RF power source. It will be explained later Obviously easy to see. Still referring to Figure 2, wires 15 and 17 are operatively connected to the first and second electrodes 22, 26, respectively. This wire is connected to the RF power generator 18 (Figure 1) via the RF power divider 16 individually. Electrodes and RF power dividers are discussed below for the purpose of being inserted between the RF power generator and the susceptor and showerhead electrodes. The preferred RF power generator 18 includes a single generator power source, and the power source is a working type Link processing chambers and It is configured to provide rF power to the RF power splitter, which in turn provides RF power to the susceptor and shower head according to the selected power ratio. I will describe in detail later "This is a big novel difference in the previous PECVD reactor, which has only one lotus. The lotus head electrode is powered by an RF power source, and the susceptor electrode is grounded. The single RF power generator illustrated is preferably configured to provide RF power to the electrode, which can effectively develop a plasma processing environment inside the processing chamber and relatively Provide a predetermined bias voltage for semiconductor workpieces. For example, maintaining a better power deviation of the electrodes can help accelerate the ion or ion species toward the workpiece or the crystal, which can promote the coverage rate, especially when the aspect ratio is high. It is possible to obtain a more uniform and / or higher purity of the tritium or layer composition. Referring to FIG. 3 and according to another preferred practice of the present invention, a different type of PECVD reactor 30 is stated. Such a reactor includes an induction coil PECVD. The reactor 30 includes a processing chamber 31, and the inside of the chamber can carry out the application of the Chinese National Standard (CNS) A4 specification (2 丨0X297 mm) ---------- ^ ------ 1T ------ ^ (Please read the notes on the back before filling this page) Printed by a consumer cooperative 4 6 0 b ^ 6 A7 _ _____ B7 V. Description of the invention (6) Chemical vapor deposition process of the invention. The first electrode 32 is arranged inside the reactor and is configured to support at least one semiconductor workpiece, such as a crystal The first electrode 32 is powered by a better single RF power generator 18 (Fig. 1). According to the present invention, there can be more than one crystal wafer to be processed. Tishidian is outside the processing chamber 31 Including multiple coils, they can be powered by the same preferred single-RF power generator. "With reference to sections 2 and 3, including pEcVD reactors, which include individual electrodes, both are powered by a single RF power generator or power source. According to the first practice, the two-electrode system is disposed inside the processing chamber (Figure 2 according to the second preferred practice. At least one electrode system is disposed outside the processing chamber (Figure 3). The two electrodes of the best practice are all composed of a single electrode. The RF # rate generator is powered by the power generator 18 in Figure 1. As mentioned above, this represents a novel difference from the previous pecvD reactor, in which the two electrodes are not driven by RF power from a common single RF # rate source. In the fourth circle, the preferred RF power splitter is described in 36. In the preferred specific example, the power splitter 36 includes a transformer 38, which includes an input terminal or a primary winding 40 and an output terminal or a secondary winding. 42. The input terminal 40 is operatively coupled or connected to the rf power generator ι8 (FIG. 1) through a coaxial cable 44 and receives the power so generated. The β output terminal 42 includes at least two output terminals 15, 17 'which are working modes. Coupling or connection to the first and second electrodes 22, 26 (PECVD reactors in the second frame) or the first and second electrodes 32, 34 (PECVD reactors in FIG. 3). In the best practice, the 'output end contains More than two terminals, first and second The reactor constitutes the sole processing chamber electrode powered by it. The power divider 36 divides the input power supplied by the power generator 18 into the paper size applicable to the Chinese National Standard (CNS) Α4 specification (2! 0 × 297 mm) 9- -------- Install-(Please read the notes on the back before filling this page),? Τ Α7 _________ Β7_ V. Description of the invention (7) The first and second power components are configured, and then Supply individual electrodes. The output end of the better transformer supplies power to the first and second electrodes according to the selected power ratio (detailed later). The proper matching network 46 is used for impedance matching. Such networks typically include various The capacitive and inductive components are configured for impedance matching. This is shown in block diagram form in box 46. The Central Standards Bureau of the Ministry of Economic Affairs, Shelley Consumer Cooperation, Du Yinze According to a preferred aspect of the present invention, the RF power divider 36 includes a Central tapping transformer in which the output power to the first and second electrodes is approximately equal. This is desirable when the power divider 36 is used in combination with the PECVD reactor in Figure 2. However, in some cases it has been found that The power ratio of each electrode is proportional to the electrode 22, 26 surface area 24, 28 * Therefore, by changing or manipulating the surface area, the power ratio can be manipulated or selected and affects the number of "seen" of individual electrodes applied by this power component And the second power component. In the preferred specific example, such surface areas are different from each other. The surface area of the susceptor is larger than the surface area of the showerhead. In this way, a power difference can be developed based on a definable relationship. This relationship is determined by a predetermined relative amplitude. Composition, the amplitude is proportional to the inverse ratio of the fourth power of the surface area of the electrode ^ In other words, by changing the relative surface area ratio between the susceptor and the shower head, the applied power can be changed. In the preferred embodiment, the surface area of the second electrode or shower head 26 is smaller than the surface area of the first electrode or susceptor 22. This results in a higher amplitude of power applied to the head than the sensor. This allows the reactants introduced into the chamber 21 to be deposited in a better manner, so that high-energy species are extracted toward the electrode supporting the workpiece. Referring to Section 5 (a), another preferred power splitter is shown schematically at 36 °. This alternative to the better power divider can get the predetermined power difference without considering the electrodes ---------------—...___ 10 (Please read the precautions on the back before filling in the guestbook (Page) This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 460606 A7 B7 V. Description of the invention (8) The surface area ratio between and is independent of the surface area ratio, regardless of whether these electrodes belong to the reaction shown in Figure 2 This is true of the reactor or the reactor of FIG. 3. Where appropriate, the power splitter is marked with a similar number, the difference is attached by "a" or indicated by a different number. In this way, the power divider 36a includes an input terminal 40, which is any one of the working light-duty RF generator 18 (FIG. 1), and the output terminal 42a, which is any one of the working-type switching better reactors 20'30. In this way, the reactor 20 of the second circle does not need to have a susceptor electrode and a lotus head electrode, and their respective surface areas are relatively close to each other. The power divider 36a preferably allows the selected power ratio to be adjusted by changing the power supplied to the electrode. "In the preferred specific example as described above, the RF power divider includes a transformer having a plurality of secondary windings 42a. As indicated by 48 * can be grounded in varying ways. Still referring to Figure 5 and for illustration purposes, the output 42a is shown as containing nine sets of windings. By selectively grounding different windings or coils, different power ratios can be supplied to the shower head and sensor electrodes. For example, if the number 2 coil or winding is grounded as shown, the first electrode, that is, electrode 22 (picture 2) or 32 (picture 3), receives 2/9 or 22.2% of the input power of the power generator. In this way, the second electrode, that is, the electrode 26 (picture 2) or 34 (picture 3) receives 7/9 or 77.8 ° /. Correlation of input power β, if the coil or winding number 7 is grounded, the power distribution is reversed, that is, the first electrode receives 7/9 input power and the second electrode receives 2/9 input power. The power supplied to the better electrode can be changed to match different processing plans. In the illustrated example of the preferred embodiment, the power divider 36a can be changed by the end user to adjust the selected power ratio to match different processing plansa. This type of processing plan may provide a proper amount of power to the second electrode. Non-first electrode. In addition, the paper closest to the semiconductor paper standard is applicable to the Central European National Standard (CNS) A4 specification (21〇χ 297 directors) I ------; ------- \-I .-- tr- ----- 0 {Please read the notes on the back of Jing before filling out this page) Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 11 Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 460606 A7 _______B7_V. Invention Note (9) The power of the electrode is lower than the power supplied to the electrode farther from the workpiece. Thus, two preferred power dividers have been described. The first of these (Figure 4) produces excellent output power with approximately equal amplitude. Such a power divider is suitable for use in a reactor, such as reactor 20 in Fig. 2, in which the final power amplitude provided to the example electrode can be adjusted by changing the electrode surface area ratio. Such a power divider can also be used in combination with the reactor 30. In addition, and equally preferably, the power divider 36a (FIG. 5) allows the output power to be adjusted in a variable manner to a selected power ratio suitable for use in a reactor, such as reactor 20 in FIG. 2, where the electrodes may or may not have an electrode surface area. Meaningful change. In addition, these power dividers can be used preferably and in combination with the reactor 30 of FIG. 3. Referring to FIG. 6, a representative flowchart of a preferred method for processing semiconductor workpieces in combination with the aforementioned reactor is schematically shown in FIG. The preferred method includes first placing a semiconductor workpiece in a selected one of the aforementioned PECVD reactors before step 110. According to better practice, a susceptor is provided to support the workpiece inside the processing chamber. According to the specific example of Fig. 2, the shower head electrode 26 is arranged adjacent to the susceptor and is arranged inside the chamber for supplying gaseous reactants. According to the specific example in Fig. 3, at least one of the reactor electrodes is provided outside the chamber. At step 112, the gaseous reactants are supplied to the reactor chamber. At this time, at step 114, RF power from a preferred single or common RF power source is supplied. The rf power supplied at step 116 'is divided into first and second power components, which are selectively supplied to the aforementioned individual electrodes. For example, the first power component is applied to the first electrode in step 118. At step 120, a second power component is applied to the second electrode. The composition of the better applied power and other-composition
(請先閲讀背面之注意事項再填寫本育) ，装. 線--- i^n t 12 4 6 U l ? j A7 ____B7_ 五、發明説明（10 ) 差異係來自於電極表面積變化（第2圖）或功率分配器36a之 一次繞線或輸出端42a之變化選擇性接地（第5圖），根據較 佳實務，變壓器輸出線圈而非中心線圈可選擇性接地用於 改變功率組成分之相對幅度β此係指示為選擇性步驟122 ，其中個別使用者可選擇各反應器電極間之預定功率比。 於處理步驟124’且以預定功率比施加至選定電極，半導 體工件經處理而執行化學蒸氣沈積◊於步驟丨26，完成處 理，且根據前文說明處理次一工件。 遵照法令規定，本發明已經或多或少就結構及方法特 點做出特定說明。但須了解本發明絕非囿限於所示及所述 之特定特點，此處揭示之手段包含將本發明付諸執行之較 佳形式。因此本發明係以隨附之申請專利範圍之適當範圍 適當解說之任何形式或修改形式申請專利。 ----------^---^——：--1T------'^ (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度朝中關家縣⑽s丨从胁（21()><297公慶） 4 6 Ο 6 Ο 〇 經濟部中央揉準局負工消费合作社印製 Α7 Β7 五、發明説明（ιι ) 元件標號對照 10…電漿增強之化學蒸氣 30…PECVD反應器 沈積反應器系統 31…處理腔室 12…供氣單元 32“·第一電極 14…化學蒸氣沈積反應器 34…第二電極 15…導線，端子 36，36a…功率分配器 16…RF功率分配器 38···變壓器 17…導線，端子 40…輸入端，第一繞線 18…RF功率產生器 42…輸出端，第二繞線 20…反應器 44…同軸纜線 21…處理腔室 46·*· S己 Μ $ ，才匡 22…第一電極 48…接地 24…第一電極表面積 100…流程圖 26…第二電極 110-26…步騨 28…第一電極表面積 -I I n 裝 ~~ .. ~ n 訂 線 (請先閲讀背面之注意ί·項再填寫本頁) 本紙伕尺度適用中國國家標準（〇^>戍4規格（2〖0父297公釐） 14(Please read the notes on the back before filling in this education), install. Thread --- i ^ nt 12 4 6 U l? J A7 ____B7_ V. Description of the invention (10) The difference is due to the change in electrode surface area (Figure 2 ) Or a winding of the power splitter 36a or a change in the output terminal 42a selectively grounded (Figure 5), according to better practice, the transformer output coil instead of the center coil can be selectively grounded to change the relative amplitude of the power component β This is indicated as an optional step 122, in which individual users can select a predetermined power ratio between the electrodes of each reactor. In processing step 124 'and applying the predetermined power ratio to the selected electrode, the semiconductor workpiece is processed to perform chemical vapor deposition. In step 26, the processing is completed, and the next workpiece is processed according to the previous description. In accordance with the statutory regulations, the present invention has more or less specified the structure and method characteristics. It should be understood, however, that the invention is in no way limited to the specific features shown and described, and the means disclosed herein include a preferred form of putting the invention into effect. Accordingly, the present invention is a patent application in any form or modification that is properly explained in the appropriate scope of the accompanying patent application scope. ---------- ^ --- ^ ——: --1T ------ '^ (Please read the notes on the back before filling out this page) Staff Consumer Cooperatives, Central Bureau of Standards, Ministry of Economic Affairs Printed paper scale toward Zhongguanjia County ⑽s 丨 Congxiu (21 () > < 297 Public Holiday) 4 6 Ο 6 〇 〇 Printed by the Central Government Bureau of the Ministry of Economic Affairs and Consumer Cooperatives A7 Β7 V. Description of the invention (Ι) Component reference 10 ... Plasma enhanced chemical vapor 30 ... PECVD reactor deposition reactor system 31 ... Processing chamber 12 ... Gas supply unit 32 "· First electrode 14 ... Chemical vapor deposition reactor 34 ... Second Electrode 15 ... wire, terminals 36, 36a ... power splitter 16 ... RF power splitter 38 ... transformer 17 ... wire, terminal 40 ... input, first winding 18 ... RF power generator 42 ... output, Two windings 20 ... reactor 44 ... coaxial cable 21 ... processing chamber 46 ... * 22, first Kuang 22 ... first electrode 48 ... ground 24 ... first electrode surface area 100 ... flow chart 26 ... second Electrode 110-26… Step 28… Surface area of the first electrode-II n installed ~~ .. ~ n Thread (please read the note on the back first) Complete this page) suitable for the present paper groom scale Chinese national standard (square ^ > 4-shu size (297 mm 2 parent 〖0) 14