_ hiN4 5QPftB _______ 五、發明說明（1) 發明背辛 1. 發明之領域 本發明係關於一種利用電子束曝光之半導體袭置圖案 影像的製造方法。 2. 專門用語 最小牿徵AJ： 在此用於表示於半導體裝置上所測量最小特徵的大小 或例行製造的特徵間的間隔。「最小線寬」與「線間最小 間隔」為同義字。而在此使用「最小特徵尺寸」一詞強調 此種「最小線寬」與「線間最小間隔」的用語。「最小線 寬」表示最寧的線的寬度。「線間最小間隔」表示線間最 窄的間隔的寬度° 一種製造工真’當照射電子輻射時’其以此輻射進行 圖案化而最終產生一影像’其藉由相對低與高的電子強度 而定義於影像平面上（通常在欲製造半導體裝置的表面上 3.相關技術工描述 已有大耋努力投入加速電子的利闱上》此努力在電子 束直接描寫上持續快速地進行。此技術的特徵為相對低 產率，與不被期望可滿足尖端半導體裝置之試產的需求。 減輕此問題的方法為在一照射（shot )期間藉使用形成_ hiN4 5QPftB _______ V. Description of the invention (1) Inventions 1. Field of Invention The present invention relates to a method for manufacturing a semiconductor pattern image using electron beam exposure. 2. Special terms Minimal sign AJ: It is used here to indicate the size of the smallest feature measured on a semiconductor device or the interval between routinely manufactured features. "Minimum line width" and "minimum space between lines" are synonymous. The term "minimum feature size" is used here to emphasize the terms "minimum line width" and "minimum space between lines". "Minimum line width" indicates the width of the most peaceful line. "Minimum interval between lines" indicates the width of the narrowest interval between lines. A manufacturing method 'when irradiated with electron radiation', it is patterned with this radiation to finally produce an image.'It uses relatively low and high electron intensity It is defined on the image plane (usually on the surface of the semiconductor device to be manufactured. 3. The relevant technical staff describes that there have been great efforts to invest in accelerating the benefits of electrons.) This effort is continuously and rapidly performed on the direct description of the electron beam. Is characterized by a relatively low yield, and is not expected to meet the needs of trial production of cutting-edge semiconductor devices. The method to alleviate this problem is to use a formation during a shot
459286 五、發明說明（2) 有圖案的兩平板調整電子束的偏❾，而改變將曝光的 ^ m 1 = 3，此方法不能滿足製造具有細微及/或複雜 遗Μ壯之半導體裝置時對良好產率的需求。此係由於從半 f圖案为割出的矩形照射方塊的數量變得太大，以 致於所製造的半導體裝置圖案變得細微與複雜。 &另一種製程取決於圖案化在透明基板上的重覆的光罩 的、子束照射。重覆的先罩具有用於曝光一組重覆的子圖 案的圖案’例如在半導體裝置中心的相同元件的陣列的一 部分.。此在一照射期間可以將相對寬的區域曝光。459286 V. Description of the invention (2) Two plates with a pattern adjust the bias of the electron beam, and change the exposure to m 1 = 3, this method cannot meet the requirements for the fabrication of semiconductor devices with fine and / or complex semiconductor devices. Demand for good yields. This is because the number of rectangular irradiated squares cut out from the half-f pattern becomes too large, so that the pattern of the manufactured semiconductor device becomes fine and complicated. & Another process depends on the sub-beam irradiation of a repeated photomask patterned on a transparent substrate. The repeated mask has a pattern for exposing a set of repeated sub-patterns', such as part of an array of identical elements in the center of a semiconductor device. This can expose a relatively wide area during an irradiation.
Nakajima於1 999年1〇月18日領證的美國專利第6〇〇7949號 十揭露此種光罩的製造。使用電子束直接描寫將不重覆的 一組子圖案的曝光，例如半導體裝置之週邊上的一組元 件。 ，透明基板的尺寸有限，因此可以圖案化於透明基板上 的光罩的數量有限。因此，實務上一般會將半導體裝置之 有限數量的重覆組子圖案的資料取出，以優先製造光罩。 圖3顯示半導體裝置圖案的一部分。此半導體裝置圖 案包含·重覆的子圖案，各以矩形方塊Ρ2包圍；與不重覆 的子圖案，以矩形方塊p i包圍。如圖所示，矩形方塊ρ丨中 的最小特徵尺寸小於矩形方塊P2者。依照常規，矩形方塊 P2中的圖案的資科係用於製造光罩，而矩形方塊μ中的的 圖案係以電子束直接描寫予以曝光。若是以電子束直接描 寫將矩形方塊P1中的較細微的圖案曝光，則很難在圖案化 時不造成線與斷線間的短路。Nakajima, US Patent No. 6,007,949, issued October 18, 1999, discloses the manufacture of such photomasks. An electron beam is used to directly describe the exposure of a set of sub-patterns that will not be repeated, such as a set of elements on the periphery of a semiconductor device. Since the size of the transparent substrate is limited, the number of photomasks that can be patterned on the transparent substrate is limited. Therefore, in practice, the data of a limited number of repeating sub-patterns of a semiconductor device are generally taken out in order to preferentially manufacture a photomask. FIG. 3 shows a part of a pattern of a semiconductor device. This semiconductor device pattern includes: duplicate sub-patterns, each surrounded by a rectangular block P2; and sub-patterns that are not repeated, surrounded by a rectangular block p i. As shown in the figure, the smallest feature size in the rectangular block ρ 丨 is smaller than the rectangular block P2. According to the conventional arts, the pattern in the rectangular block P2 is used to make a photomask, and the pattern in the rectangular block µ is directly exposed by electron beam writing. If a relatively fine pattern in the rectangular block P1 is exposed by direct description with an electron beam, it is difficult to prevent short-circuiting between lines and broken lines during patterning.
^ 4 5 9 2 8 6^ 4 5 9 2 8 6
五、發明說明（3) 發明概要 因此，本發明的目的為提供一種藉電子束曝光之半導 體裝置圖案影像的製造方法’其可以在極佳準確度下將不 重覆的半導體裝置圖案的一組細微子圖案曝光。 依照本發明，提供一種利用電子束曝光之半導體裝置 圖案影像的製造方法’包含以下各步驊： 產生具有方塊的一些列與攔的半導體裝置圖案的方塊 映像，各方塊定義出半導體裝置圖案的子圖案而方塊的子 圖案一起定義出整個半導體裝置圖案； 決定映像中各方塊的子圖案的最小特徵尺寸； 考慮方塊的子圖案的最小特徵尺寸而給出方塊的優先 順序； 依照優先順序取出方塊的其中一子圖案； 將取出的子圖案提供於光罩上；與 透過提供於光罩上的取出的子圖案進行曝光，以形成 取出的子圖案的影像。 ΜΑ:實施例之詳細铕日q 駐兹參考圖1與2 ’ gn為所製造之半導體裝置的半導體 、置圖案的一部分的上視平面圖。 像具m半λ體裝置圖案資料的矩形方塊映像。此映 半導ίίΓ圖Λ 塊6的一些列與欄。各方塊定義出 J卞圓案，而所有方塊的子圖案一起定義V. Description of the invention (3) Summary of the invention Therefore, the object of the present invention is to provide a method for manufacturing a semiconductor device pattern image exposed by an electron beam, which can set a group of non-repeated semiconductor device patterns with excellent accuracy. Subtle pattern exposure. According to the present invention, a method for manufacturing a semiconductor device pattern image using electron beam exposure is provided. The method includes the following steps: A block image of a semiconductor device pattern having rows and blocks of blocks is generated, and each block defines a child of the semiconductor device pattern. Pattern and the sub-patterns of the block together define the entire semiconductor device pattern; determine the minimum feature size of the sub-patterns of each block in the image; give the priority order of the blocks in consideration of the minimum feature size of the sub-patterns of the block; One of the sub-patterns; providing the taken-out sub-pattern on the photomask; and exposing the taken-out sub-pattern provided on the photomask to form an image of the taken-out sub-pattern. Μ: details of the embodiment q 兹 兹 Refer to FIGS. 1 and 2 ′ gn is a top plan view of a part of a semiconductor pattern of a manufactured semiconductor device. Rectangular square image of the pattern data of the camera m half λ volume device. This map has some columns and columns in block 6. Each block defines a J 卞 circle, and the sub-patterns of all the blocks are defined together
第7頁 45928 6 五、發明說明（4) 出整個半導體裝置圖案β在此情況下，各矩形方塊的尺寸 對應到在一照射期間欲曝光的區域的尺寸。 電腦決定映像中各方塊之子圖案的最小特徵尺寸。在 此例子中，電腦藉追縱各方塊的子圖案的X與y方向而決定 各方塊之子圖案的最小線寬，以給出最窄線的寬度。電腦 比較方塊的最小線寬，並回應此比較結果，如圖2所示， 考慮最小線寬給出方塊B的優先順序。在圖2中，參考號數 1至5表示優先順序。換言之，號數1表示最小的最小線寬 而號數5表示最大的最小線寬。 電腦依照優先順序取出方塊的其中一子圖案（即，圖 2之方塊B1中的子圖案），並使用習用光罩製程將取出的 子圖案提供在光罩上。電子束曝光系統透過提供於光罩上 之取出的子圖案進行曝光’以形成取出的子圖案的影像。 依照此製程，半導體裝置圖案的此部分被提供在光罩 上並固定’以便將尺寸誤差降到最小。 在製造具有窄的線間間隔的記憶單元裝置的情況。應 以線間最小間隔取代最小線寬來決定優先順序。以此種修 正’可以在極佳解析度下製造具有窄的最小間隔的半體 裝置圖案。 若是半導體裝置圖案具有特徵為：具有最窄的t 寬、與延伸於複數個方塊上，則電腦可以敢山从* _ ' 的此特徵的資料。 ^ ^ 以上所述者，僅為了用於方便說明本私明々& +、赞明之較佳會 例，而並非將本發明狹義地限制於該較佳會# 7， 聚他 K貧施例β凡依本Page 7 45928 6 V. Description of the invention (4) The entire semiconductor device pattern β is shown. In this case, the size of each rectangular block corresponds to the size of the area to be exposed during an irradiation period. The computer determines the minimum feature size of the child pattern of each square in the image. In this example, the computer determines the minimum line width of the sub-pattern of each block by following the X and y directions of the sub-pattern of each block to give the narrowest line width. The computer compares the minimum line width of the blocks, and responds to the comparison result, as shown in Figure 2, considering the minimum line width to give the priority order of the block B. In FIG. 2, reference numerals 1 to 5 indicate the priority order. In other words, the number 1 represents the smallest minimum line width and the number 5 represents the largest minimum line width. The computer takes out one of the sub-patterns of the block (that is, the sub-pattern in block B1 in FIG. 2) according to the priority order, and provides the extracted sub-pattern on the photo-mask using a conventional photomask process. The electron beam exposure system performs exposure through the extracted sub-pattern provided on the photomask 'to form an image of the extracted sub-pattern. According to this process, this part of the semiconductor device pattern is provided on the photomask and fixed 'so as to minimize the dimensional error. In the case of manufacturing a memory cell device having a narrow interval between lines. The minimum line width should be used instead of the minimum line width to determine the priority. With this modification ', a half-body device pattern having a narrow minimum interval can be manufactured at an excellent resolution. If the semiconductor device pattern has the characteristics of having the narrowest t-width and extending on a plurality of squares, the computer can dare to learn from this characteristic of * _ '. ^ ^ The above is only for the convenience of explaining the preferred meeting example of the private meeting & +, and does not limit the present invention narrowly to the better meeting # 7, Juta K poor Example β Fan Yiben
459286_ 五、發明說明（5) 發明所做的任何變更，皆屬本發明申請專利之範圍。 ιβϊΐ 第9頁 45928 6459286_ V. Description of the invention (5) Any changes made to the invention are within the scope of the invention patent application. ιβϊΐ Page 9 45928 6
第ίο頁Page ίο