4b 8b5 0 A7 B7 五、發明説明（） 發明領域： 本發明係與一種化學機械研磨製程設備有關，特別 是有關於一種化學機械研磨頭之溫度控制裝置，以應用 於晶圓或半導體基材表面平坦化的材質去除製程之中。 發明背景： 自從第一個積體電路元件的誕生以來，半導體工業 已發展了近四十年，而半導體製造的技術亦持續的進 展，以將晶片上元件的尺寸減至最小；藉由如沈積、微 影、蝕刻、平坦以及熱處理等製程技術的進步，積體晶 片上元件與電路的積集度亦日益提昇，亦提供良好的製 程良率及產品特性β以目前的製程技術而言，單一晶片 已能容納數千萬個 '甚至是數億個元件，製程技術的進 展亦使積體電路上的元件大小可缩減至次微米（sub-micron) 、 甚 至是深 次微米 （deep sub-micron)的尺 寸範圍 内，以達到更高積集度的目標。 在半導體基材上形成各個膜層、並定義各層的結構及 圖案、以藉由不同材質及組合及連接關係形成所需的元 第2頁 本纸張尺度適用中國國家標準（CNS )A4規格（210 X 297公釐） r請先閲讀背面之注意事項再填r本頁}4b 8b5 0 A7 B7 V. Description of the invention () Field of the invention: The present invention relates to a chemical mechanical polishing process equipment, and particularly relates to a chemical mechanical polishing head temperature control device, which is applied to the surface of a wafer or a semiconductor substrate. Flattened material removal process. Background of the Invention: Since the birth of the first integrated circuit components, the semiconductor industry has developed for nearly forty years, and the technology of semiconductor manufacturing has continued to progress to minimize the size of components on wafers; Advances in process technologies such as photolithography, lithography, etching, planarization, and heat treatment have also increased the integration of components and circuits on integrated wafers. They also provide good process yields and product characteristics. Chips can already accommodate tens of millions of elements, or even hundreds of millions of components. Advances in process technology have also reduced the size of components on integrated circuits to sub-micron, or even deep sub-micron (deep sub-micron) micron) to achieve the goal of higher accumulation. Form each film layer on the semiconductor substrate, and define the structure and pattern of each layer, so as to form the required elements through different materials and combinations and connection relationships. Page 2 This paper applies the Chinese National Standard (CNS) A4 specification ( 210 X 297 mm) r Please read the notes on the back before filling in this page}
，ST 線 經濟部智慧財產局員工消費合作社印製 4 5 88 5 0 A7 B7 五、發明説明（ 件結構的製程之中，平坦化製程扮演著極為重要的角色。 藉由平坦化製程的應用，可使原來因形成不同圖案與結 構的高低起伏表面，經由平坦化的步驟而使其表面平坦 化’提供平坦的基材表面’以提高後續膜層形成時的均 勻性，並藉由良好的平坦度提供如微影製程或晶圓對準 程序時的準確性及定位精確性。 化學機械研磨法（Chemical Me.chanical Polishing, CMP) 由於其所提供的良好均勻性、控制性、及表面平坦度， 而成為超大型積體電路（ultra large scale integrated circuit; ULSI)階段中，製程應用上最為重要的平坦化的一種技 術。經過數十年的發展，此技術已成功的應用在半導體 製程上且仍是未來必需仰賴的平坦化製程》此方法的施 行，即利用化學和機械兩種方式，一旦製程參數控制得 當，化學機械研磨可以提供被研磨表面高達94%以上的 平坦度。提供相對於晶圓表面的運動，以同時對基材表 面材質產生化學性及物理性的去除作用a 進行化學機械研磨製程的設備，其基本上參考第一 圖’是由一個用來進行晶片研磨的研磨台10(polishing platen)，及一個用來吸附晶圓的晶圓固定裝置（wafer h〇lder)20及研磨頭（polishing head)30所組成的。其中 晶圓固定裝置20可吸附住晶圓50之背面，然後把晶圓 50的正面壓在舖有一層研磨墊70(polishing pad)的研磨 第3頁_ 本紙張尺度適用中國國家標準（CNS )八4規格（210X297公釐） 請 先 閲 面 之 注 事 項 再 填. 寫( 本 頁 經濟部智慧財產局員工消費合作社印製 45 885 0 A7 B7 五、發明説明（） 台上來進行化學研磨。當研磨台10和晶圓固定裝置2〇 各自沿一定的方向旋轉時，以此研漿和研磨表面反應而 將沉積層去除並將之平坦化的製程。而影響CMP平坦 化技術的主要製程參數，自然和此研漿，研磨轉速，及 晶片受壓的大小有關。其它例如研磨墊的材質，被研磨 材質的種類等等也都是影響其操作的因素。 而且由於化學機械研磨的製程處理，會同時牵涉到 表面材質的化學性及物理性去除作用，因此製程對溫度 條件的變化較為敏感，在傳統應用上，化學機械研磨時 的製程溫度即成為控制材質去除速率、研磨均勻性、以 及研磨過程中化學機制及物理機制間平衡的重要.因素 在習知的化學機械研磨設備之中，為控制製程的溫 度’大多會有溫度控制的裝置。一般而言，在習知的化 學機械研磨没備之中，溫度控制的元件皆是設置於研磨 平台10内、研磨墊70的下方處，也就是大略位於第一 圖中箭頭所指的位置，並利用液體流動的方式，或者是 叹置加熱線圈或加熱器的方式，來達到所需的升溫或降 溫的目的，而藉此控制製程的溫度條件。並可藉由設置 於研磨平台之内的溫度感應裝置，來進行溫度的監控。 然而，上述的化學機械研磨設備之溫度控制裝置， __ 第4苜 本紙張尺度適^中國國家標準（CNS ) A4規格Y210X297公釐） 一 C請先閱讀背面之注意事項再疫寫本頁)Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs of ST Line 4 5 88 5 0 A7 B7 V. Description of the invention (In the process of the structure of the structure, the flattening process plays a very important role. With the application of the flattening process, The original undulating surface with different patterns and structures can be flattened through the planarization step to provide a flat substrate surface to improve the uniformity of subsequent film formation, and with good flatness It provides accuracy and positioning accuracy such as photolithography or wafer alignment procedures. Chemical Mechanical Polishing (CMP) Because of its good uniformity, controllability, and surface flatness It has become the most important flattening technology in the process of ultra large scale integrated circuit (ULSI) stage. After decades of development, this technology has been successfully applied to semiconductor processes and The flattening process that still needs to be relied on in the future "The implementation of this method uses chemical and mechanical methods. Once the process parameters are controlled, Properly, chemical mechanical polishing can provide a flatness of up to 94% of the surface being polished. It provides movement relative to the wafer surface to simultaneously remove chemical and physical removal of the surface material of the substratea. The equipment, which basically refers to the first figure, is a polishing platen for wafer polishing, a wafer holder 20 for polishing wafers, and a polishing head ( polishing head) 30. The wafer fixing device 20 can hold the back of the wafer 50, and then press the front side of the wafer 50 against the polishing with a polishing pad 70. Page 3_ This paper Standards are applicable to China National Standards (CNS) 8-4 specifications (210X297 mm) Please read the notes before filling out. Write (Printed on this page 45 885 0 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ) Chemical polishing is performed on the table. When the polishing table 10 and the wafer holding device 20 are rotated in a certain direction, the slurry and the polishing surface react to remove the deposited layer and The planarization process. The main process parameters that affect the CMP planarization technology are naturally related to the slurry, the grinding speed, and the size of the wafer pressure. Others such as the material of the polishing pad and the type of material to be polished are also Factors affecting its operation. And because the chemical mechanical polishing process treatment will involve both chemical and physical removal of the surface material, the process is more sensitive to changes in temperature conditions. In traditional applications, the chemical mechanical polishing The process temperature becomes important to control the material removal rate, the uniformity of the grinding, and the balance between the chemical and physical mechanisms during the grinding. The factors are in conventional chemical mechanical grinding equipment. Most of the temperature control is used to control the process temperature. installation. Generally speaking, in the conventional chemical mechanical polishing equipment, the temperature control elements are all arranged in the polishing platform 10 and below the polishing pad 70, that is, roughly located at the position indicated by the arrow in the first figure. And use the way of liquid flow, or the way of sighing the heating coil or heater, to achieve the purpose of heating or cooling required, and thereby control the temperature conditions of the process. The temperature can be monitored by a temperature sensing device located inside the grinding platform. However, the temperature control device of the above-mentioned chemical mechanical grinding equipment, __ 4th paper size is suitable for China National Standard (CNS) A4 specification Y210X297 mm) 1 Please read the precautions on the back before writing this page)
'1T 經濟部智慧財產局員工消費合作社印製 4 5 885 〇 Α7 五、發明説明（) 會產生許多的缺點。由於研磨墊70 —般係使用高分子 類的物質，以提供良好的壓力及均勻性，但由於其材質 的特性，其傳熱的效率較差，因此研磨平台1〇處的溫 度條件’往往會與實際研磨時的晶圓有相當的差距。此 外，以目前化學機械研磨較高的製程效率而言，通常研 磨進行的時間並不長，一般約在數十秒至數百秒的範圏 内，而在如此短暫的製程時間中，研磨平台10處的溫 度條件並無法及時傳導至接觸晶圓的研磨墊7 0上，研 磨平台10之内的溫度感應裝置亦無法即時反應製程的 溫度變化，形成製輕溫度條件上的偏差、亦造成溫度控 制上的困難。 發明目的及搬诫： 經濟部智慧財產局員工消費合作社印製 本發明的目的為提供一種化學機械斫磨之溫度控制 裝置。 本發明的另一目的為提供一種化學機械研磨之溫度 控制裝置，以提供化學機械研磨時準確而快速的溫度控 制。 本發明的另一目的為提供一種化學機械研磨之溫度 本紙張尺度適用中國國家裙準（CNS〉Μ規格（210X297公釐） A7 B7 五、發明説明（） 控制裝置，可達到即時升溫及測溫的效果。 本發明的另一目的為提供一種化學機械研磨之溫度 控制裝置’以確實控制及反應實際研磨時接觸晶圓之研 磨塾的溫度條件及變化’增加製程溫度的控制性。 本發明中化學機械研磨之溫度控制裝置，主要可包 含：氣體供應裝置、氣體溫度控制裝置、泰坦（Titan)研 磨頭、及溫度檢測裝置β如第二圖所示；氣體由供應裝 置先經過一溫度控制裝置再進入研磨頭；研磨頭内為一 封閉的氣室（closed chamber)，包含一薄膜，該薄膜受氣 體壓力膨脹後與晶圓接觸，藉由進入氣體對此薄膜施壓 以使得晶圓成一曲面；研磨頭則用以旋轉曲面晶圓以進 行對晶圓之研磨；溫度檢測裝置則用以檢測晶圓之溫度。 上述之晶圓係於研磨頭中經過一氣體充脹之薄膜壓迫使 形成一曲面。經由溫度控制後的氣體影響到其接觸的薄 膜，而間接的傳導影響到與薄膜接觸之晶圓。再利用一 溫度檢測裝置測量晶圓之溫度，回饋至氣體溫度控制裝 置後調整氣體溫度，以達到控制研磨晶圓溫度的目的° 圊式簡單說明： 第一圖 為一說明化學機械研磨設備的簡圖； 本紙張尺度適用中國國家揉準（CNS ) A4規格（210x297公袭） 請 先 聞 面 之 注 意 事 項 再 經濟部智恶財產局員工消費合作社印製 笛苜'1T Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 5 885 〇 A7 5. Description of the invention () There will be many shortcomings. Since the polishing pad 70 generally uses a polymer material to provide good pressure and uniformity, but due to the characteristics of its material, its heat transfer efficiency is poor. Therefore, the temperature conditions at the polishing platform 10 tend to There is a considerable gap between the wafers actually polished. In addition, in terms of the current high process efficiency of chemical mechanical polishing, the grinding usually does not take long, generally within the range of tens of seconds to hundreds of seconds, and in such a short processing time, the polishing platform 10 The temperature conditions at the location cannot be timely transmitted to the polishing pad 70 that is in contact with the wafer, and the temperature sensing device within the polishing platform 10 cannot immediately respond to the temperature change of the manufacturing process, forming deviations in the light temperature conditions and causing temperature control. Difficulties. Purpose of the Invention and Revelation: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics The purpose of the present invention is to provide a temperature control device for chemical mechanical honing. Another object of the present invention is to provide a temperature control device for chemical mechanical polishing to provide accurate and rapid temperature control during chemical mechanical polishing. Another object of the present invention is to provide a chemical-mechanical grinding temperature. The paper size is applicable to Chinese national standard (CNS> M specification (210X297 mm) A7 B7. 5. Description of the invention () Control device can achieve instant temperature rise and temperature measurement Another object of the present invention is to provide a temperature control device for chemical mechanical polishing 'to reliably control and reflect the temperature conditions and changes of the polishing pads contacting the wafer during actual polishing' to increase the controllability of the process temperature. In the present invention The temperature control device for chemical mechanical polishing may mainly include: a gas supply device, a gas temperature control device, a Titan grinding head, and a temperature detection device β as shown in the second figure; the gas passes through a temperature control device from the supply device first Then enter the grinding head; the inside of the grinding head is a closed chamber containing a thin film, which is expanded by the gas pressure to contact the wafer, and the thin film is pressed into the curved surface by entering the gas ; The grinding head is used to rotate the curved wafer to polish the wafer; the temperature detection device is used to detect the wafer The temperature of the wafer. The above-mentioned wafer is forced into a curved surface by a gas-filled film pressure in the grinding head. The gas controlled by the temperature affects the film it contacts, and the indirect conduction affects the crystal that contacts the film. The temperature of the wafer is measured by a temperature detection device, and the temperature of the wafer is adjusted after feeding back to the gas temperature control device to achieve the purpose of controlling the temperature of the polished wafer. The paper size is applicable to the Chinese National Standard (CNS) A4 size (210x297 public attack) Please read the precautions before you print the flutes in the Consumer Cooperatives of the Intellectual Property Office of the Ministry of Economic Affairs
Α7 _ Β7 20 24壓力控制裝置 27進氣管 30研磨頭 5〇晶圓 65 線路 4 5 885 0 五、發明説明（） 第二圖 為一說明以氣體溫度控制研磨晶圓溫度之示意 面 · m ， 第三圖 為一說明研磨頭内以氣體調整晶圓溫度之概略 構造圖； 圖號對照說明： 10 22氣體供給裝置 26氣體溫度控制裝置 28出氣管 40薄膜 6 〇溫度檢測裝置 70研磨墊 發明詳細說明： 本發明所揭露的係為一種化學機械研磨（Chemical Mechanical Polishing, CMP)裝置。於此裝置中，提出一 種化學機械研磨之溫度控制裝置，藉由溫度控制方式的 改變，可直接產生對實際研磨時接觸晶圓之加熱，以提 供化學機械研磨時準確而快速的遇度控制，達到即時升 ---mi μ _ 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） _(請先閲讀背面之注意事項再填貧本頁) *1Τ 經濟部智慧財產局員工消費合作社印製Α7 _ B7 20 24 Pressure control device 27 Intake pipe 30 Grinding head 50 Wafer 65 Wafer 65 Circuit 4 5 885 0 V. Description of the invention () The second figure is a schematic diagram illustrating the control of the temperature of the polished wafer by the gas temperature. M The third figure is a schematic structural diagram illustrating the adjustment of the wafer temperature by gas in the polishing head; the comparison of the drawing numbers: 10 22 gas supply device 26 gas temperature control device 28 gas outlet tube 40 film 6 temperature detection device 70 polishing pad invention Detailed description: The system disclosed in the present invention is a chemical mechanical polishing (CMP) device. In this device, a temperature control device for chemical mechanical polishing is proposed. By changing the temperature control method, it can directly generate heating for contacting the wafer during actual polishing, so as to provide accurate and rapid exposure control during chemical mechanical polishing. Achieving instant rise --- mi μ _ This paper size is applicable to China National Standard (CNS) Α4 size (210X297 mm) _ (Please read the precautions on the back before filling the poor page) * 1Τ Employees ’Intellectual Property Bureau Consumption Printed by a cooperative
45 885 Q A7 B7 五、發明説明（） 溫及測溫的效果，並確實控制及反映製程溫度變化，增 加製程溫度的控制性β 參見第二圖所示，即為本發明中化學機槭研磨之溫 度控制裝置的示意圖；第三圖所示則為本發明中化學機 械研磨之泰坦（Titan)研磨頭之結構示意圖β如第二圖中 所示’化學機械研磨之溫度控制裝置主要可包含：氣體 供給裝置22、氣體溫度控制裝置26、研磨頭3〇、包含於 研磨頭内之薄臈（Membrane)40及溫度檢測裝置6〇。 在本發明之較佳實施例中，上述之氣體供給裝置22， 供應氣體，並經過一壓力控制裝置24及一氣體溫度控制 裝置26而進入研磨頭30中，在本發明之最佳實施例中 可使用氮氣做為供應的氣體。 經濟部智慧財產局員工消旁合作社印製 請參考第三圖，隨著氣體進入研磨頭3〇的體積漸大， 氣趙在研磨頭30之密閉式環境中的内壓力亦漸增，在到 達一定壓力後’因為密閉環境之薄膜40無法承受此壓力 而產生變形，例如在研磨頭内部壓力到達2 p s丨之後，會 促使密閉環境之薄膜40產生變形膨脹。變形膨脹後之薄 膜40呈現一圓弧狀的凸起β隨著研磨頭3〇内壓力的增 加，薄膜4〇的變形量愈大，而使薄膜40所呈現的弧度 愈大，且更加的向外突出。接下來薄膜40會接觸至研磨 箪8頁_ 各紙張尺度適用中國國家標準（C.NS ) Α4規格（2丨0X297公釐） δ 經濟部智慧財產局員工消費合作杜印製 4 885 〇 Α7 _______— 五、發明説明（） 頭30下方的晶圓50，此時的壓力舉例來說約為5 ps* ° 研磨頭内更多的氣體及更大的壓力使膨脹的薄膜40歷追 晶圓5 0 ’而使晶圓亦出現相同的變形。變形的晶圓5 〇凸 起向下接觸到研磨墊70，以方便化學機械式研磨的作業。 回到第二圖’在氣體進入研磨頭30前，本發明之最 佳實施例中在氣體供給裝置22與研磨頭30之間’設置 氣體溫度控制裝置26，例如利用液體流動的方式，或 者是設置加熱線圈或加熱器的方式，來達到所需的升溫 或降溫的目的。由氣體供應裝置22產生的氣體，經過上 述之氣體溫度控制裝置26，該裝置加熱或降低氣體之溫 度後，經由進氣管27進入研磨頭3 0中，並使薄膜40膨 脹°當研磨頭30之壓力使薄膜40變形以接觸晶圓50之 後’經過溫度控制的氣體在研磨頭3〇中與研磨頭3〇周 圍的環境進行熱交換，其中亦包括受氣體壓力擠壓的薄 膜40;而同時薄膜4〇與其周圍環境進行熱交換，亦包括 受薄膜40擠壓的晶圓50，此時相當於受到溫度控制的氣 體與晶圓50透過薄膜40做為媒介而進行間接的熱交換， 因此氣體的溫度可以影響晶圊5 〇而控制研磨溫度，達成 本發明之主要目的。而且因為薄膜4〇之厚度極薄，所以 透過該薄膜40的熱交換並不會有太多負面影響。本發明 本紙張尺^適用中國國家標準（CNS ) A视^ ( 210X297公^ ) 一 t請先閲讀背面之注意事項异填寫本頁) 885 0 A7 B7 五、發明説明（ (諳先聞讀背面之注意事項再填#本頁} 實施例中較佳晶圓5 〇研磨的溫度範圍約在i 〇至6〇 ^之 間。各種溫度區間的設定亦取決於不同研磨材質及不门 研磨表現的需要。一般來說，研磨溫度高對研磨效率有 較佳的表現，但是研磨溫度過高亦會產生部分副作用， 例如研磨墊70的使用壽命減少及研漿的揮發量增加等。 在習知技藝中的溫度控制係針對研磨墊7 0的機構。， 於研磨過程中，研磨頭30内之氣體會藉由壓力控制 裝置24保持一定之壓力，亦代表研磨頭3〇内的氣體會 持續的經由進氣管27進入，並經由出氣管28排出。所 以源源不斷進入經由溫控管理的氣體可以隨時調整研磨 中晶圓5 0之溫度。 經濟部智慧財產局員工消費合作社印製 氣體溫度控制裝置26設置於連接於研磨頭之進氣管 27的上方，以藉由氣趙温度的傳導、對流方式以控制晶 圓溫度’此達成直接針對研磨晶圓50加熱的效果，並可 避免與運動中的研磨墊70之直接接觸 '，減少研漿污染及 研磨墊7 0運動自由度上的問題，以較佳實施例而言，氣 體溫控裝置26係加裝於壓力控制裝置24之後之進氣管 27，如第三圖中之標示，以於研磨頭30之封閉氣室中， 經由薄膜40表面實際接觸晶圓50的區域之熱交換，以 即時的達到晶圓5 0於研磨作業所需之製程處理溫度》 第 各紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐> 4 經濟部智慧財產局員工消費合作社印製 i g A7 〜 B7_五、發明説明（） 溫度檢測裝置60則用以檢測研磨晶圓5Ο、或說是其 表面及於研磨時所附著之研漿的溫度。在較佳實施例之 中，溫度檢測裝置6 0之設置考量，係用以直接檢測晶圓 50在研磨中之溫度、及晶圓50於進入研磨前之溫度；溫 度檢測裝萱60可應用非接觸式的溫度檢測裝置，例如採 用紅外線測溫裝置等，避免與運動中的研磨墊及研磨液 直接接觸，減少研磨液污染及研磨墊70運動便利性上的 問題 > 並可藉由非接觸的測溫方式提供測量表面溫度的 準讀性。 經過該溫度測量裝置60得知的數據可以經由一線路 65回饋給氣體溫控裝置26(見第二圖所示），溫控裝置因 應此數據而調整氣體溫度，以提供研磨晶圓5〇較佳之作 業溫度。 因此，藉由本發明中的化學機械研磨之溫度控制裝 置，可由氣體溫度控制裝置24及溫度檢測裝置6〇提供 即時且直接的溫度控制加熱與溫度監控，達到.即時晶圓 5〇溫控的效果，提昇研磨製程溫度的控制性，例如以形 成嫣插塞所需的化學機械研磨製程為例，藉由本發明中 的化學機械研磨之溫度控制裝置60，可在製程一啟始 時’即將研磨晶圆的溫度由原來的低溫（i 〇 °c )即加熱至45 885 Q A7 B7 V. Description of the invention () The effect of temperature and temperature measurement, and indeed control and reflect the process temperature change, increase the controllability of process temperature β See the second figure, which is the maple grinding of chemical machine in the present invention The schematic diagram of the temperature control device of the chemical mechanical polishing; the third diagram shows the structural schematic diagram of the Titan grinding head of the chemical mechanical polishing in the present invention. Β As shown in the second image, the chemical mechanical polishing temperature control device may include: The gas supply device 22, the gas temperature control device 26, the polishing head 30, the membrane 40 included in the polishing head, and the temperature detection device 60. In a preferred embodiment of the present invention, the above-mentioned gas supply device 22 supplies gas and passes through a pressure control device 24 and a gas temperature control device 26 to enter the grinding head 30. In a preferred embodiment of the present invention, Nitrogen can be used as the supply gas. Printed by the cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, please refer to the third picture. As the volume of the gas entering the grinding head 30 gradually increases, the internal pressure of Qi Zhao in the closed environment of the grinding head 30 also gradually increases. After a certain pressure, the film 40 in the closed environment is deformed because it cannot withstand this pressure. For example, after the internal pressure of the grinding head reaches 2 ps, the film 40 in the closed environment will be deformed and expanded. After the deformation and expansion of the film 40, an arc-shaped protrusion β appears. As the pressure in the grinding head 30 increases, the deformation of the film 40 increases, so that the curvature of the film 40 becomes larger, and more Outstanding. Next, the film 40 will come into contact with the grinding sheet. 8 pages _ Chinese paper standard (C.NS) Α4 specifications (2 丨 0X297 mm) are applicable for each paper size. Δ Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Consumption Du Print 4 885 〇Α7 — V. Description of the invention () Wafer 50 below head 30, for example, the pressure at this time is about 5 ps * ° More gas in the grinding head and greater pressure cause the expanded film 40 to follow the wafer 5 0 'and the same deformation occurs on the wafer. The deformed wafer 50 protrudes downward and contacts the polishing pad 70 to facilitate the chemical mechanical polishing operation. Returning to the second figure 'before the gas enters the polishing head 30, in the preferred embodiment of the present invention, a gas temperature control device 26 is provided between the gas supply device 22 and the polishing head 30', for example, by using a liquid flow method, or Set the heating coil or heater to achieve the required temperature increase or decrease. The gas generated by the gas supply device 22 passes through the above-mentioned gas temperature control device 26, which heats or lowers the temperature of the gas, enters the grinding head 30 through the air inlet pipe 27, and expands the film 40. When the grinding head 30 After the film 40 is deformed by the pressure to contact the wafer 50, the temperature-controlled gas exchanges heat with the surroundings of the grinding head 30 in the grinding head 30, which also includes the film 40 squeezed by the gas pressure; and at the same time, The thin film 40 performs heat exchange with its surroundings, and also includes the wafer 50 squeezed by the thin film 40. In this case, the temperature-controlled gas and the wafer 50 pass through the thin film 40 as a medium to perform indirect heat exchange. Therefore, the gas The temperature can affect the crystal temperature 50 and control the grinding temperature to achieve the main purpose of the invention. And because the thickness of the film 40 is extremely thin, the heat exchange through the film 40 does not have much negative influence. The paper rule of the present invention ^ applies to Chinese National Standard (CNS) A view ^ (210X297 male ^) Please read the notes on the back first and fill in this page) 885 0 A7 B7 V. Description of the invention ((谙 First read the back Note for refilling #this page} The temperature range of the preferred wafer 50 grinding in the embodiment is between i 0 and 6 0 ^. The setting of various temperature ranges also depends on the different grinding materials and the performance of non-grinding. Yes, in general, high grinding temperature has a better performance on grinding efficiency, but too high grinding temperature will also have some side effects, such as reduced service life of the polishing pad 70 and increased volatilization of the slurry. The temperature control in the mechanism is for the polishing pad 70. During the polishing process, the gas in the polishing head 30 will be maintained at a certain pressure by the pressure control device 24, which also means that the gas in the polishing head 30 will continuously pass through. The air inlet pipe 27 enters and exits through the air outlet pipe 28. Therefore, the gas that is continuously controlled by temperature control can be adjusted at any time to the temperature of the wafer 50 during grinding. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The gas control temperature control device 26 is provided above the air inlet pipe 27 connected to the polishing head, and controls the wafer temperature through the conduction and convection of the gas temperature. This achieves the effect of heating the polishing wafer 50 directly, and Can avoid direct contact with the polishing pad 70 in motion, reduce slurry contamination and problems with the freedom of movement of the polishing pad 70. In a preferred embodiment, the gas temperature control device 26 is added to the pressure control device. The air inlet pipe 27 after 24, as indicated in the third figure, is used to heat the area of the surface of the film 40 that actually contacts the wafer 50 in the closed air chamber of the grinding head 30 to reach the wafer 50 in real time. The processing temperature required for the grinding operation》 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm > 4 printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ig A7 ~ B7_V. Description of the invention ( ) The temperature detection device 60 is used to detect the temperature of the polished wafer 50, or the temperature of the surface and the slurry attached during polishing. In a preferred embodiment, the consideration of the setting of the temperature detection device 60 is It is used to directly detect the temperature of the wafer 50 during polishing and the temperature of the wafer 50 before entering the polishing; the temperature detection device Xuan 60 can be applied with a non-contact temperature detection device, such as an infrared temperature measurement device, to avoid and movement The direct contact between the polishing pad and the polishing liquid in the polishing pad reduces the pollution of the polishing liquid and the problem of the convenience of the movement of the polishing pad 70 > It can also provide the accuracy of measuring the surface temperature by a non-contact temperature measurement method. The data obtained at 60 can be fed back to the gas temperature control device 26 (see the second figure) through a line 65. The temperature control device adjusts the gas temperature according to this data to provide a better operating temperature for the polishing wafer 50. Therefore, with the chemical mechanical polishing temperature control device of the present invention, the gas temperature control device 24 and the temperature detection device 60 can provide immediate and direct temperature control heating and temperature monitoring to achieve the effect of real-time wafer 50 temperature control. To improve the controllability of the grinding process temperature, for example, the chemical mechanical grinding process required to form the plugs is taken as an example. With the chemical mechanical grinding temperature control device 60 in the present invention, the crystals are about to be ground at the beginning of the process. The temperature of the circle is heated from the original low temperature (i 0 ° c) to
(請先閲讀背面之注$項再填k本貫) JM. 訂 A7 4sig g B7 五、發明説明（） 所需的較佳製程溫度，例如約為50°C至70°C，並能於製 程進行時隨時保持所需的溫度條件，使研磨速率能於製 程一開始時即快速提昇至所需的設定值，增加製程的控 制性及研磨的均勻性，且大幅縮短製程進行的時間，增 加晶圓量產的效率。 本發明以較佳之實施例說明.如上，僅用於藉以幫助 了解本發明之實施，非用以限定本發明之精神，而熟悉 此領域技藝者於領悟本發明之精神後，在不脫離本發明 之精神範圍内，當可作些許更動潤飾及等同之變化替換， 其專利保護範圍當視後附之申請專利範圍及其等同領域 而定a (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 _笛12苜 本紙張尺度適用中國國家標準（CMS ) A4規格（210X297公釐）(Please read the note on the back and then fill in the original text) JM. Order A7 4sig g B7 V. Description of the invention () The better process temperature required, for example, about 50 ° C to 70 ° C, and can be used at Maintain the required temperature conditions at any time during the process, so that the grinding rate can be quickly increased to the required setting value at the beginning of the process, which increases the controllability of the process and the uniformity of the grinding, and greatly shortens the time of the process and increases Efficiency of wafer mass production. The present invention is illustrated by the preferred embodiments. As above, it is only used to help understand the implementation of the present invention, not to limit the spirit of the present invention, and those skilled in the art will not depart from the present invention after understanding the spirit of the present invention. Within the scope of the spirit, some modifications and equivalent changes can be made, and the scope of patent protection depends on the scope of the attached patent application and its equivalent area a (Please read the precautions on the back before filling this page) Economy Printed by the Ministry of Intellectual Property Bureau's Employee Cooperative Cooperative_Di 12 Paper Size Applicable to China National Standard (CMS) A4 Specification (210X297 mm)