TW457575B - Wet etching apparatus for semiconductor circuit and method for manufacturing minute tip used in its apparatus - Google Patents

Abstract

The present invention discloses a wet etching apparatus for semiconductor circuit and manufacturing method for minute tip used in its apparatus. The wet etching apparatus for semiconductor circuit includes a reservoir for storing wet etchant, a tube connected with the reservoir and having specific radius for injecting wet etchant to a specific part on a semiconductor wafer, a unit for keeping semiconductor wafer, and a unit for situating the tube to the specific part of the semiconductor wafer.

Description

^ £ 2 ^ 7 5 ------- The invention of Zuofang i is related to the partial Manchu engraving machine and fine control taxis on semiconductor circuits. Specifically, it is to produce wafers that will be formed on semiconductor wafers. ) Etching machine for local wet etching of L-layers and straight ends at the end of the tube = diamond microtubes with a visibility of several tens to several hundred # m, which is used to supply the extremely strong acid or salt-based chemicals The equipment manufacturing method and the method of manufacturing a microcircuit for a semiconductor circuit local wet etching machine that supplies a small amount of chemical substances to a local area of a semiconductor circuit and a microtube used herein. ^ Historically, 1 i thography has been used for partial etching of partial layout patterns formed on semiconductor substrates. For example, when depositing an opaque layer in the key pattern area during the deposition process on a semiconductor substrate, in order to remove this layer, the open key etching side by side can be viewed side by side with the key pattern, and six processes are performed, namely: 1) photoresist Photo resister coating process 2) Key open mask exposure process 3) Development process 4) Key etching process 5) Photo resist strip process 6) Cleaning process Figure 1 (a) Or Figure 1 (d) is the traditional open bond method, Figure 1 (a) is the traditional semiconductor process, the nitride layer after the proton isolation process | 20 chemical mechanical polishing (CMP, chemical mechanical polishing) state ' On the semiconductor substrate 10, an oxide layer is deposited on the bond pattern, and a nitride layer 20 remains there; FIG. 1 (b) shows the state after the nitride layer 20 is removed after the mass-hand isolation process in a conventional semiconductor process. ; Figure 1 (c) is for

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Five 'Description of the invention (2) Remove the oxide layer deposited on the key figure and give an example ^ Shown is to remove the gas deposited on the key figure ^ Open the key cover, as shown in Figure i (b) after 1) photoresist covering process, 2 ) Opening g = using traditional lithography, 4) open key etching process, 5) first stop the bar, horse. The exit process, 3) the development process, and the bond diagram, as shown in Figure 1 (d) Λ 菝, 6) After the cleaning process, it can be exposed but the semiconductor substrate is exposed to increase the TAT (Turn Around ^ factory) When using lithography as the main part, u 1 we) time matters. In order to solve this problem, the present invention uses a part of a layout drawing on a substrate or a substrate as an example: the $ engraving is formed on a semiconductor substrate engraving machine for its purpose. The W-field + conductor circuit partial wet shoes still provide the above-mentioned high-conductor electric entry tube and its manufacturing method. Its purpose is to engrav the liquid injection with a engraving machine, which prompts the production of strong salt-based liquid and acid liquid Ϋ A method of safely supplying a small amount of chemical substances through a microtube 金刚石 Physical and chemical safety based on diamond, etching, and semiconductor circuits that can supply a very small amount of liquid are partially filled: ::: 罔The diamond microtube and its manufacturing method are for its purpose. According to the invention, the etching solution is connected to the etching solution storage place and the etching solution storage place, and the etching solution has a predetermined size of the etching solution exposed on the semiconductor substrate. Semi-conductive local wet etching of an injection tube and a substrate supporting two substrates supporting its semiconductor substrate to be etched, and an etching solution injection tube or its semiconductor substrate to move one of them to a part of the semiconductor substrate to be etched The equipment serves its purpose. In addition, in order to achieve the purpose, the semiconductor partial wet etching of the present invention is 457575. 5. Description of the Invention (3) The method for manufacturing the microtube includes the following steps: The radius of the end portion of the side produced by the wet I insect engraving is 1 n. ri or metal wire within 5 0 0 um; cover the outside of the metal wire with diamond, cubic boron nitride (c-BN) or sapphire; remove the material covering part of the metal wire; # 刻 金属 线And remove the metal wire. Equipment for storing liquid chemical substances used in semiconductor processes. Most of them are chemical substances that are chemically safe and low in price (such as teflon, PTFE, etc.). They are gold or platinum that is resistant to strong acids or strong bases. Precious metals such as precious metals are also suitable for application departments that require chemical safety. However, in the traditional semiconductor processing of silicon substrates, there are no examples of microtubes with an inner diameter of less than 50 .wm; there are still measurements using diamond probes. Equipment with surface inflection, but in the case of parts without related processes, the material of the pipe is diamond; because the existing acid-resistant, salt-resistant materials, such as polymer materials or platinum, have a lower hardness than diamond, Therefore, when the size is less than several μm, it is easy to deform only by slight contact, and the diamond hardness is high and the size is less than a few days. Diamond is a chemically safe substance that is not affected by all kinds of acidic compounds and basic compounds at room temperature. The present invention relates to processing the end of a metal wire or metal plate having a thickness of several tens / ztn or more Method η® for covering materials such as diamond, removing the covered end to form a tube at the end of the open side, and removing the metal of the base material to create an etching solution injection tube 3

4 5 7 5 7 5 V. Description of the invention (4) The second figure is the production of a metal wire (s 1) by injection etching of an etching solution, and the metal wire (s2) is covered by the body and the material gradually downward in the cylinder (s2). ) To make an etching solution injection pipe. The etching solution injection provided by the present invention [1. The metal wire by wet etching is a processing method for making a very sharp metal part. That is, if the metal wire is immersed in the etching solution as shown in FIG. 3, the convection phenomenon of the liquid gradually progresses, and the speed difference between the interface between the metal wire and the etching prevention layer can be made into sharp light of the metal wire. The metal wire is made of tungsten, glass, silicon oxide, aluminum oxide, CeO), magnesium oxide, and calcium oxide. The diameter of the main body must be 50um or more, or less than 500um. The process of making the tube. First, according to the shape of the metal wire formed during the wet process, the shape is sharp; after that, diamonds, etc .; after removing the end of the metal needle (s3), the metal wire can be engraved to cook the tube. The production method is described in detail as follows: Production] The present invention uses a situation where the etching prevention layer is surrounded by a partially etched substrate. The entire metal surface is etched first, but the etching rate of the middle part is closer to the etching rate of parts. Slows down, thus ending the rest of the moment, so there is no mechanical grinding wire. Shi Xi, molybdenum (Μ 〇), coarse (T a), chain, broken silicon, zirconium oxide (ZrO2), hafnium oxide (choose one less material 'diameter of sharp end of metal wire cylinder should be 丨At least diamond, gold, platinum, molecular weight 30㈣) and epoxy resin (e.g. hydrochloric acid, nitric acid, sulfuric acid, fluorene, samarium, etc.) are selected. 1 Insect prevention layer uses glass, the above is qualitative, rocky soil (parafin one material, 1 etching solution uses acid, hydrogen peroxide and ammonia water one

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V. Description of the invention (5) [2'Cover of diamond and other substances] The sharp end made according to the process of Fig. 3 is the part, and the metal wire or metal plate within 50 uin is made by chemical vapor phase. (CVD, C hemica 1 Vapor D epositi ο n), cross-sectional view after covering g with a substance such as diamond on a multi-section crystal, as shown in FIG. 4. The material to be coated with rhenium is in addition to diamond, c-BN (cubic boron nitride) or sapphire, and the thickness of the cover layer is 0.5 μm or 1 μm. [3. Production of etching solution injection tube]

In order to make an etching solution injection pipe, the material to be covered at the end of FIG. 4 must be removed. If the material to be covered is diamond, it cannot be efficiently processed by a mechanical polishing method that does not include diamond particles. According to the present invention, after the end portion of one side of the peripheral covering material is contacted with a metal having a large carbon diffusion coefficient (iron, copper, nickel, turn, fierce, hafnium, crane, hafnium), the temperature is increased to 300 ° t: more than It becomes a method of consuming the diamond-bound carbon into the metal and consuming it. Generally, the polishing method is at the end of the diamond tube, and it is difficult to make a slight opening (na η ο ο pening). Therefore, the polishing method based on the complete diffusion is very effective. Fine polishing method 1 of Fig. 5 is a diagram showing the end portion of the diamond covering the metal wire on a metal block with a large diffusion coefficient, and Fig. 6 is a detailed description of the metal block part of Fig. 5. Fig. 6 (a) shows the state before diffusion, and Fig. 6 (b) shows the state of diffusion. As shown in Fig. 6 (b), diamond metal wire and metal are deposited during fine polishing of diamond by diffusion. Block, nothing happens between these two metals

Page 8 457575 V. Description of the invention (6) Visible diffusion > The carbon diffusion path is interrupted while fine polishing is stopped. When polishing diamond, the metal block must contain cobalt, nickel, saturated More than one metal in the crane, crane, and Qin = In Figure 5, the wires of the Dianji metal block and the diamond are individually connected to the wire and come into contact with electricity 'or when the power is drawn from the outside or the voltage is drawn from the outside When a certain amount of electricity flows through this wire, you can check whether the side of the diamond micro tube is squared or not.

For mass production, the laser carbon 1 as shown in Figure 7 can be used to evaporate and open the end of one side of the microtube, exposing the end portion containing oxygen $ plasma or the 400 containing oxygen. (: The above high temperature method is to burn carbon dioxide into carbon dioxide. The angle Θ between the center of the metal wire where the diamond is deposited and the center line of the laser light is 2 degrees or 70 degrees. —The last part of the surface is polished by laser. After removing the metal wire] After the process described in the Salt Satra, the etching solution is injected into the metal wire in the tube, including:-acetic acid, hydrofluoric acid, acetic acid, hydrogen peroxide And ammonia water to the engraved schematic diagram such as ΐ'Π ::, and the surface removed after such a process has Π = ΐ hair Γ uses an etching solution to inject the cross section of the tube, the tube body ==: = (a ), The liquid injection tube ㈠ is gradually formed, the second one is a cross-section, and the end of the etching liquid injection tube is based on the diameter of the end as '1.' Etching solution

Injection tube is not eroded by wet etching solution

苐 S Page 4 5 7 5 7 5 V. Description of the invention (7) Engraved, repeated contact is formed in optically opaque diamond, boron nitride crystal or sapphire brake, 'u is not blunt, so the gold and silver are shown in Figure 9. The present invention:--A schematic diagram of a wet etching machine, the x-liquid injection into the semiconductor circuit board wafer exporter 230 is taken out-one wafer is stored in the wafer 210, Figure 10 After the present invention is displayed, it is located on the program table 19o. Partial wet etching machine for semiconductor circuits ¥ Partial wet etching machine for body circuits, X, moving work in one direction * _Sequence stage 'two wafers ... wafer t 11 〇, in order to expose this etching solution to half, Bao-guan etching Liquid etching solution, official etching solution injection tube 100, support for etching of local areas on the base, and support for the tube support function. Tube support function 12 °, 2-axis mobile handlebar wet engraving machine connected to the body 15 ^ Private Z-axis movement: The Z-axis movement motor 140 of 130 and the stage branch and spear supporting the stage 190 to move in the x and y directions, and the part 170 and the x and y axis movement motor for moving this It is 160%. At this time, depending on the situation, move the z-axis to 160, X, y, and both axes can be moved. The fixed stage or fixed z-axis is moved to 160, and the stage is 19 to χ, y. , z-axis movement s The local wet etching machine position of the semiconductor circuit is located in an isolation room separated by a vertical separation screen. After Zhou Yi moved the wafer into the isolation chamber with the robot arm 240, he moved to the program table 190. Move the x, y axis to move the motor 16o and? The shaft moving motor 14 0 ′ injects the etching solution into the tube 丨 〇 〇 on the portion to be wet-engraved. FIG. 11 is a step of the layout drawing inspection method of the present invention. The semiconductor substrate forming the layout is loaded on a wound (sl); the analysis position is designated, and the etching solution injection tube is moved to the analysis position (s2). Shili

Page 10 V. Explanation of the invention (8) The injection tube can also move the semiconductor substrate 'or the etching solution injection tube and the semiconductor substrate can be moved together; thereafter, the etchant is exposed to the part to be analyzed for wet etching (sd); De-ionized water (s4) »The reason for injecting de-ionized water is that the last engraving solution continues to engraving the layout on the wafer surface. Therefore, to adjust the degree of etching, deionized water is used to dilute. The injection volume of deionized water is 1 to 1000 times the injection volume of the etching solution. The deionized water (S5) is sucked in again using the pressure difference to remove the chemical residue on the layout. Finally, the wet part is removed. The etched substrate (S6) is partially etched to form a layout on the substrate, and the shape of the layout can be checked. Layout drawing of the wet etching solution exposed on the substrate from the etching solution injection tube by capillary phenomenon 'capillary phenomenon caused by the surface tension of the wet etching solution' keeps the outer surface of the etching solution injection tube depressed The surface of the liquid is etched, and before the etching is started, the layout of the etching liquid is not exposed on the layout of the wafer. The temperature of the liquid (having the method of heat conduction in the 200 and the engraved liquid pipe or the etched liquid injection pipe in FIG. 10) increases the volume of the etchant, and exposes the etchant to the outside of the etchant injection pipe for engraving. . The diamond microtubes according to the present invention can be used to etch a part of the silicon substrate by supplying a small amount of an acidic or salt-based liquid, and can become a local etch of a lithography process that omits the existing semiconductor process. This reduces conductor process costs and process development time. According to the present invention, the local etching process will check the progress of the silicon substrate during the conductor-less process, so the locally etched silicon substrate is not contaminated, so

Page 11 457 575 V. Description of the invention (9) can be reused in the next process. Diamond microcapsules are chemically safe and do not react with DNA test reagents. Therefore, in the production of large quantities of DN A wafers and bio-wafers' gene wafers, important parts for the reagents are used. In addition, the fine acidity is adjusted with a small amount of chemical substances. Although the present invention has been described in the previous specific cases, it does not mean that the present invention is limited to the foregoing scope. Anyone familiar with this technology can make some changes and retouch without departing from the spirit and scope of the present invention. . Therefore, the scope of protection of the present invention shall be determined by the scope defined by the scope of patent application. 5 ^ 5 75 Brief Description of Drawings Figure 1 U) is a bond diagram after chemical mechanical polishing after the proton isolation process in the traditional semiconductor manufacturing process. FIG. 1 (b) shows a state after removing a nitride layer after a proton isolation process in a conventional semiconductor process. Fig. 1 (c) shows a conventional semiconductor process in which the oxide layer is removed and the key cover is opened. Figure 1 U) shows the etching of an oxide layer in a conventional semiconductor process. Figure 2 shows the process of making an etching solution injection tube. FIG. 3 is a process of manufacturing a metal wire by wet etching. Figure 4 is a metal wire covered with diamond. Fig. 5 shows the manufacturing process of the diffused etching solution injection pipe. FIG. 6 is an enlarged view showing the fabrication of a diffused etching solution injection tube. Figure 7 is a drawing of the opening of a laser etching solution injection tube. Fig. 8 is a cross section of the tube used in the present invention. Fig. 9 is a schematic view of a semiconductor circuit local wet etching machine using an etching solution injection tube of the present invention. FIG. 10 is a partial wet etching machine for a semiconductor circuit according to the present invention. Figure 11 shows the steps of the layout drawing inspection method of the present invention. [Illustration of figure number] 20 ------ Ιι 化 物 layer 10 0 ----- 14 etch liquid injection pipe 110 ----- nick liquid officer 120 ----- etching liquid pipe support function 13 0 ----- z-axis move

457575

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Claims (1)

457575 Sixth, the scope of application for patents 1. An etching device for a semiconductor circuit, which is used to wetly etch the semiconductor substrate deposited on a snowy road ::. The device has a money engraving agent for the liquid engraving agent; On one side of the liquid storage place, the etching solution is injected into the tube with a predetermined radius of the exposed portion of the semiconductor substrate. The substrate supporting device supports the semiconductor substrate to be etched. The etching solution is injected into at least one of the tube or the semiconductor substrate and moved to it. A method of moving a portion of the semiconductor substrate to be etched. 2. The etching device described in item 1 of the patent application, has an etching solution supply method for supplying an etching solution to a semiconductor circuit substrate through its etching solution injection pipe. 3. The etching device described in item 2 of the scope of patent application, the method of supplying the etching solution is started by heating or pressure. 4. The etching device according to item 1 of the scope of the patent application, the etching solution injection pipe is made of diamond, boron argon crystal and sapphire. 5. The etching device described in item 1 of the scope of the patent application, wherein the radius of the etching solution injection pipe is lOnm or 1000um. 6: If the etching device described in item 5 of the patent scope, the part of the side of the etching liquid injection pipe connected with the remaining liquid storage place is formed by a cylindrical image with a diameter of 50um or more. The diameter of the cylindrical image, γ, a method for manufacturing a micro-tube of a semiconductor etching device, that is, a method for manufacturing a contact-etching liquid injection tube of a semiconductor #etching device, including the following steps: The end radius of the surface produced by full-type engraving is ηηπ | Or 50000! 1] 1 metal wire'1 The metal wire is made of diamond, boron nitride crystal and sapphire. 457575 6. Scope of patent application Covering more than one substance; removing the substance covering part of its metal wire: I etch the metal wire and remove the metal wire. 8. The manufacturing method as described in item 7 of the scope of patent application, including a stage in which a metal wire to be partially etched is covered with an etching protection layer in a metal wire manufacturing stage; and a stage in which the coated metal wire is sunk in an etching solution. 9. The production method as described in item 8 of the scope of the patent application, wherein the etching protection layer is made of at least one of glass, diamond, gold, platinum, a substance having a molecular weight of 300,000 or more, paraffin, and epoxy resin. As the liquid, one or more of hydrochloric acid, nitric acid, sulfuric acid, hydrofluoric acid, acetic acid, hydrogen peroxide, and ammonia water were used. 10, the production method described in item 7 of the scope of patent application, the material is covered according to the chemical vapor deposition method, the thickness of the material to be covered is 0. 5um or 1nm. 1 1. According to the manufacturing method described in item 1 of the scope of patent application, at the stage of removing the covering substance, there is a stage in which the covering substance contacts a metal diffuser having a diffusion coefficient greater than that of the covering substance to diffuse the covering substance. 12. The manufacturing method described in item 11 of the scope of patent application, the diffusion stage of which is a high temperature above 300 ° C: 1 3. The manufacturing method described in item 11 of the scope of patent application, the metal The material to be diffused is made of one of cobalt, nickel, molybdenum, manganese, vanadium, tungsten, and titanium. 14. The manufacturing method as described in item 7 of the scope of the patent application, using the center line and the metal line of the laser light 'laser tube at the stage of removing the covering material. Page 16 457575 6. The angle of the center line of the scope of patent application is 2 degrees or 170 degrees. 15. The production method as described in item 7 of the scope of patent application, in which the covering material is removed, and the last part is exposed to a plasma containing oxygen c 1 6. The production is described in item 7 of the scope of patent application A method in which a covering substance is removed, and carbon is burned at a high temperature of 4 0 3C or more containing oxygen. 17. The manufacturing method as described in item 7 of the scope of patent application, in the metal wire removal stage, using an etching solution selected from one or more substances of hydrochloric acid, nitric acid, sulfuric acid, hydrofluoric acid, acetic acid, hydrogen peroxide and ammonia water. To etch.