KR100397390B1 - Wet etching apparatus for semiconductor circuit and manufacturing method for minute tip used in its apparatus - Google Patents

Abstract

A semiconductor circuit local wet etching machine and a method for manufacturing a microtubule used therein, wherein the semiconductor circuit local wet etching machine of the present invention is connected to an etching solution storage portion for storing an etching solution and an end surface of the etching solution storage portion, and the etching solution is partially formed on the semiconductor substrate. A substrate support apparatus for supporting the semiconductor substrate to be etched and an etchant injecting tube having a predetermined radius for exposing to the substrate, and a movement for moving at least one of the etching liquid inlet tube or the semiconductor substrate to a portion of the semiconductor substrate to be etched Means.

Description

Wet etching apparatus for semiconductor circuit and manufacturing method for minute tip used in its apparatus}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor circuit local wet etcher and a method for manufacturing microtubules used therein, and more particularly, to an etching machine capable of locally wet etching a laminated film formed on a semiconductor wafer and a tube end portion used therein. And a device for producing a diamond microtube having a diameter or width of several nanometers to several hundred micrometers, and supplying a very small amount of strong acidic or strong basic chemicals using the same, and using this device to convert a small amount of chemicals into a semiconductor. A semiconductor circuit local wet etcher for supplying a localized region of the circuit and a method for producing microtubules used therein.

Conventionally, lithographic methods have been used to partially etch some patterns formed on semiconductor substrates. For example, if an opaque film is deposited in the key pattern area during the lamination process on the semiconductor substrate, the key open etching process may be performed to remove the opaque film to show the alignment key pattern at the bottom. 1) Photoresist coating process 2) Key open mask exposure process 3) Development process 4) Key open etching process 5) Photoresist strip process 6) Post etch cleaning process A series of six processes were required.

A conventional method of opening a key pattern is shown in FIGS. 1A-1D. FIG. 1A shows a state in which the nitride film 20 is chemically mechanically polished after an element isolation process in a conventional semiconductor manufacturing process. An oxide film is laminated on the semiconductor substrate 10 in the key pattern, and the nitride film 20 remains between them. 1B is a diagram illustrating the removal of the nitride film layer after the device isolation process in the conventional semiconductor manufacturing process. Fig. 1C shows a key open mask provided for removing the oxide film laminated on the key pattern. As described above, when the conventional lithography method is applied to remove the oxide film deposited on the key pattern as shown in FIG. 1B, the photoresist coating process 2) the key open mask exposure process (shown in FIG. 1C) 3) Development process 4) Key open etching process 5) Photoresist removal process 6) After the post etching cleaning process, the key pattern can be exposed as shown in FIG. 1D.

However, when the lithography method is used to expose some regions on the semiconductor substrate, there is a problem of increasing TAT (Turn Around Time) time.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor circuit local wet etcher capable of partially wet etching a semiconductor substrate or a portion of a pattern formed on the substrate.

In addition, an object of the present invention is to provide an etching liquid inlet tube and a method of manufacturing the semiconductor circuit local wet etching machine.

In other words, by producing microtubes of several micrometers in diameter capable of containing strong basic liquids and acidic liquids, we propose a method to stably supply trace chemicals, and based on the physical and chemical stability of diamond, It is an object of the present invention to provide a semiconductor circuit local wet etcher and a diamond microtube used therein for producing etching and a small amount of liquid supply, and a manufacturing method thereof.

1A is a view showing a key pattern after chemical mechanical polishing after a device isolation process in a conventional semiconductor manufacturing process.

1B is a view showing a process state after removing the nitride film layer after the device isolation process in the conventional semiconductor manufacturing process.

1C shows a key open mask formed after removing a nitride film layer in a conventional semiconductor manufacturing process.

FIG. 1D illustrates an oxide etched in a conventional semiconductor manufacturing process. FIG.

Figure 2 is a manufacturing process diagram showing a manufacturing process in which the etching liquid inlet tube is produced.

3 is a metal wire manufacturing process by wet etching.

4 is a diamond-coated metal wire.

Figure 5 is a process chart of etching liquid injection pipe by diffusion.

6 is an enlarged view of the etching solution input tube manufacturing method by diffusion.

Fig. 7 is a drawing of the etching liquid inlet tube opening manufactured by laser ablation.

8 is a cross-sectional view of an etching liquid inlet tube used in the present invention.

9 is a schematic diagram of a semiconductor circuit local wet etchant using the etchant inlet tube of the present invention.

10 is a semiconductor circuit local wet etchant of the present invention.

11 is a procedure flowchart showing a procedure of a pattern inspection method which is one example of application of the device of the present invention.

The object of the present invention is to support an etching solution storage section for storing an etching solution and an etching solution inlet tube which is connected to one end surface of the etching solution storage section and has a predetermined radius for exposing the etching solution to a partial region on the semiconductor substrate and the semiconductor substrate to be etched. It can be achieved by a semiconductor circuit board local wet etching apparatus, characterized in that it comprises a substrate supporting device and an etching solution inlet tube or moving means for moving at least one of the semiconductor substrate to a partial region on the semiconductor substrate to be etched.

Still another object of the present invention is to manufacture a metal wire having a radius of one end of less than 1 nm to 500 μm by wet etching and coating at least one material selected from diamond, cubic boron nitride or sapphire on the outer circumferential surface of the metal wire. It can also be achieved by a method for producing microtubules in a semiconductor local wet etching apparatus, comprising a material coating step, a coating material removal step of removing a material coated on a portion of the metal wire, and a metal wire removal step of etching and removing the metal wire.

Most of the devices for storing liquid chemicals used in the semiconductor process have been using chemically stable, low-cost polymer materials (eg, Teflon, PTFE, etc.), and have a strong resistance to strong acids and strong bases. Precious metals are also being applied to applications requiring chemical stability. However, in the conventional semiconductor process for processing silicon substrates, there is no application case of microtubes with an inner diameter of less than 50 μm, and there is a device for measuring surface curvature using a diamond probe. Is not known to be a diamond. Existing acid and base materials, such as high molecular material and platinum, are significantly harder than diamond, and thus are easily deformed even by slight contact when they are smaller than several micrometers. However, diamond has a very high hardness and excellent strain recovery when the size is less than several micrometers.

Diamond is a chemically very stable material that is free from damage by all kinds of acidic compounds and basic compounds at room temperature. The present invention finely processed the end of the metal wire or metal plate having a thickness of several tens of ㎛ or more to have a radius of curvature of a few nm, and then coated with a material such as diamond and removed one end of the tube coated with such material The present invention relates to a method of manufacturing an etching solution input tube by making an open end portion and removing metal, which is a substrate material.

2 shows a manufacturing process in which the etching liquid inlet tube is manufactured. First, a metal wire is prepared by wet etching. (Step s1) The shape of the metal wire formed in this process has a cylindrical body and a sharp end portion toward the end from the body portion. A metal such as diamond is coated on the metal wire formed in this manner. (Step s2) After the material coated on the tip of the metal tip is removed to produce an etching solution inlet tube, (s3 step) by etching the metal wire can be prepared an etching solution inlet tube (step s4).

Referring to the method of producing an etching solution inlet tube proposed in the present invention in detail.

1. Fabrication of metal wires by wet etching

In order to make very sharp metal parts, the present invention uses a machining method by partial etching. That is, as shown in FIG. 3, when the metal wire is immersed in the etching liquid in a state surrounded by an etch protection layer, the entire metal surface is initially etched, but as time passes due to liquid convection, the center portion of the metal wire is etched. The speed is slower than the etching speed of the portion near the interface between the metal wire and the etch stop layer. This difference in etch rate makes it possible to make sharp ends of metal wires. Therefore, it is possible to mass-produce a sharp metal wire without mechanical grinding.

At this time, the material of the metal wire used is at least one material selected from W, Si, Mo, Ta, Ti, Glass, SiO2, Al2O3, Si3N4, ZrO2, CeO, MgO, CaO, and the diameter of the cylindrical body of the metal wire is It should be more than 50um in the technique, the diameter of the narrow end of the pointed tip is preferably processed in the form of less than 1nm to 500um.

At least one material selected from glass, diamond, gold, platinum, a molecular weight of 3000 or more, paraffin, and epoxy is used as an etching protective layer. As an etching solution, hydrochloric acid, nitric acid, sulfuric acid, fluoric acid (fluoric acid), acetic acid, and hydrogen peroxide are used. At least one substance selected from water and ammonia water may be used.

2. Coating material such as diamond

Also a sharp tip made of a three-step chemical metal wire or metal plate having less than 500um vapor deposition (CVD: C hemical V apor D eposition) process section is after the coating of a material of the diamond or the like on poly-4 using Same as

The material to be encoded may be cubic boron nitride or sapphire in addition to diamond, the thickness of the coating film is preferably 0.5um to 1mm thick.

3. Etchant input tube production

In order to make the etching liquid inlet tube, the material coated on the bottom part of FIG. 4 should be removed. If the coated material is diamond, it is impossible to effectively process the mechanical stone polishing method without the diamond particles.

In the present invention, after contacting one end of the coating material to a metal having a large diffusion coefficient of carbon (Fe, Co, Ni, Mo, Mn, V, W, Ti), the diamond bond is formed by raising the temperature to 300 ° C or higher. The carbon is diffused into the metal and consumed. It is difficult to create nanometer openings at the ends of brittle diamond tubes with a general polishing method. Therefore, the polishing method by diffusion of carbon atoms is a very effective fine polishing method.

FIG. 5 is a diagram illustrating a state in which one end portion of a diamond coated on a metal wire is brought into contact with a metal block having a large diffusion coefficient, and FIG. 6 is an enlarged view illustrating the square block portion of FIG. 5 in detail.

FIG. 6 (a) shows a state before diffusion starts, and FIG. 6 (b) shows a state where diffusion occurs. As shown in FIG. 6 (b), when diamond fine grinding is performed by diffusion and a metal block on which diamond is deposited meets a metal block, which is a diffusion agent for carbon, visible diffusion does not occur between the two metals. The fine grinding stops as it is blocked.

When polishing the diamond, it is preferable to use a metal containing at least one element of CO, Ni, Mo, Mn, V, W, Ti as the material of the metal block, which is a diffusion material.

In FIG. 5, the electric wires are respectively connected to the metal block and the diamond-deposited metal wires, and the wires connected to each other are electrically contacted again so that the resistance of the wires is less than or equal to a gigaohm or when a current is applied from the outside. The fact that a metal block and diamond-deposited metal made electrical contact based on this fact when a current of constant voltage flowed through this conductor while flowing or externally energized. That is, it can be used as a basis for judging that one part of the diamond microtube is opened.

For mass production, one end of the microtube can be opened by the evaporation of carbon atoms by the laser shown in FIG. 7, exposing the end to plasma containing oxygen, or in a high temperature atmosphere of 400 ° C. or higher containing oxygen. Can be used to burn carbon dioxide with carbon dioxide. It is preferable to polish the laser at one end of the microtube so that the angle c between the center line of the diamond-deposited metal line and the center line of the laser light is between 2 degrees and 170 degrees.

4. Remove the metal wire

After the above process, the metal wire in the etching solution inlet tube is removed by etching with an aqueous solution containing at least one of hydrochloric acid, nitric acid, sulfuric acid, fluoric acid (fluoric acid), acetic acid, hydrogen peroxide water, ammonia water. The schematic diagram of the etching liquid inlet tube made through such a process is as FIG.

Fig. 8 shows a cross sectional view of an etching liquid inlet tube used in the present invention. The wet etching liquid is stored inside the etching liquid inlet tube, and the body of the etching liquid inlet tube is provided with a cross section of the cylindrical portion as shown in FIG. 8 (a), and the end of the etching liquid inlet tube is shown in FIG. 8 (b). The end is provided in a shape that is getting narrower. The end portion of the etching solution inlet tube preferably has a diameter of 10 nm to 1 mm.

The etchant input tube applied to the present invention should not be etched into the wet etchant and the etchant input tube should not be blunt even when frequently contacted with an optically opaque film formed on the substrate. Therefore, diamond or cubic boron nitride (c-BN; Cubic Boron Nitride) ) Or sapphire (Sapphire, Al oxide).

Fig. 9 shows a schematic diagram of a semiconductor circuit local wet etching machine equipped with the etching liquid inlet tube of the present invention. After storing a plurality of wafers in the wafer cassette 210, one wafer is taken out using the wafer handler 230, the wafer is placed in the correct position using the wafer aligner 220, and the wafer is processed. Place on stage 190.

10 illustrates a semiconductor circuit local wet etcher of the present invention. The semiconductor circuit local wet etching machine mounts the wafer 210 and has a process stage 190 which is responsible for moving the mounted wafer in the x and y directions, an etchant cartridge 110 for storing the etchant, and the etchant on the semiconductor substrate. An etchant inlet tube 100 for exposing to a localized region, an etchant cartridge support means 120 for supporting an etchant cartridge, and an etchant cartridge support means 120 and a semiconductor circuit local wet etchant body 150. Support and movement of the z-axis movement bar 130 and the z-axis movement motor 140 for moving the z-axis movement bar 130 and the process stage 190 for supporting the process stage 190 and moving them in the x-axis and y-axis directions. The unit 170 and the x-axis y-axis moving motor 160 for driving the same. In this case, in some cases, the Z-axis movement bar 160 can be moved to all of the x, y, and z axes, and the process stage is fixed, or the Z-axis movement bar 160 is fixed, and the process stage 190 is x, y. You can also move it to the z axis.

The semiconductor circuit local wet etcher is located in a chamber separated by a vertical dividing wall 180. The robot arm 230 is used to move the wafer into the chamber and then onto the process stage 190. The portion to be wet etched is driven by the x-axis y-axis moving motor 160 and the z-axis moving motor 140 to place the etching solution inlet tube 100 on the upper portion.

11 is a procedure flowchart showing the procedure of the pattern inspection method which is one example of application of the device of the present invention. The semiconductor substrate on which the pattern to be analyzed is formed is loaded into the equipment. (Step s1) The analysis position is designated, and the etchant injection tube is moved to the analysis position. (Step s2) Of course, in this case, instead of moving the etching liquid inlet tube, the etching liquid inlet tube may be moved together with the semiconductor substrate or the semiconductor substrate. Next, the etching solution is exposed to the portion to be analyzed for wet etching. (Step s3) In the next step, ultrapure water (De-ionized Water) is injected. (Step s4) The reason why the ultrapure water is injected is to adjust the etching degree by diluting the pattern with the ultrapure water since the etching solution is continuously present on the wafer surface. At this time, the injection amount of ultrapure water is preferably used from 1 to 100 times the injection amount of the etching solution. Next, a step (s5 step) of sucking the injected ultrapure water again is necessary. This is to remove chemical residues present on the pattern, and the principle applied here is to use pressure differences. Finally the partially wet etched substrate is removed from the equipment. (Step s6) It is possible to inspect the formed pattern shape by performing partial etching of the pattern formed on the substrate using the above method.

The method of exposing the wet etching solution to the pattern formed on the substrate from the etching solution inlet tube uses a capillary phenomenon. By using the capillary phenomenon generated by the surface tension of the wet etching solution to maintain the surface of the etching solution concave with respect to the outside of the etching liquid inlet tube, the etching solution does not contact the pattern formed on the wafer as the etching target material until etching is started. A method of applying pressure directly to the gas or in contact with the surface of the etchant on the opposite side of the etching site or a means for raising the temperature of the etchant (200 in FIG. 10 and heat transfer means provided in the etchant cartridge or etchant inlet tube) By increasing the volume of the immersion liquid is exposed out of the etching liquid inlet tube to allow the etching to proceed.

Partial etching of the silicon substrate may be performed by supplying a small amount of acidic or basic liquid by the diamond microtubules presented by the present invention, thereby eliminating the lithography process of the existing semiconductor process. The process control time can be greatly saved.

In addition, since the process progress of the silicon substrate in the semiconductor process according to the present invention can be confirmed using partial etching, the silicon substrate subjected to the partial etching may be used again to proceed to the next process because it is not contaminated otherwise.

Diamond microtubes are very chemically stable and do not react with DNA test reagents, so they can be used as core components of reagent supply parts when producing DNA chips, bio chips, and gene chips. In addition, it is possible to adjust the fine acidity (Ph value) as a trace amount of the chemical can be supplied.

Although the present invention has been described with reference to the embodiments shown in the drawings, this is merely exemplary and should be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. . Therefore, the true scope of protection of the present invention should be defined by the technical spirit of the appended claims.

Claims (17)

A semiconductor circuit board local wet etching apparatus for enabling local wet etching of a semiconductor substrate on which an arbitrary circuit pattern is laminated, An etchant storage unit storing an etchant; An etching solution inlet tube for introducing an etching solution stored in the etching solution storage unit into the regeneration pattern; The etchant inlet pipe, the inlet connected to the etchant storage, Configured to include an outlet located opposite the inlet, The outer circumference of the outlet has a shape that is gradually tapered toward the end of the outlet, Substrate support means for supporting the semiconductor substrate to be etched; And A moving means for moving at least one of the etching liquid input pipe or the semiconductor substrate to a partial region of the semiconductor substrate to be etched, Outer diameter of the outlet of the etching liquid inlet pipe is 10nm to 1000㎛, The portion of the etching liquid inlet tube connected to one end surface of the etching liquid storage portion has a cylindrical shape having a diameter of 50 μm or more, and the predetermined diameter is smaller than the diameter of the cylindrical shape. The local wet etching apparatus of claim 1, wherein And an etchant supply means for supplying the etchant through the etchant inlet tube. 3. A semiconductor circuit board locally wet etching apparatus as claimed in claim 2, wherein said etching liquid supplying means is operated by a heating method or a pressing method. The apparatus of claim 1, wherein the etchant inlet tube is formed of at least one material selected from diamond, cubic boron nitride, or sapphire. delete delete In the etching liquid input pipe manufacturing method of the semiconductor local wet etching apparatus which enables a local wet etching of a semiconductor substrate, A metal wire manufacturing step of manufacturing a metal wire having a diameter of one end portion of less than 1 nm to 500 μm by wet etching; A material coating step of coating at least one material selected from diamond, cubic boron nitride or sapphire on the outer circumferential surface of the metal wire; A coating material removing step of removing a material coated on a portion of the metal wire; And a metal line removing step of etching and removing the metal line. The method of claim 7, wherein the manufacturing of the metal wire comprises: covering the metal wire to be partially etched with an etching protection layer; And And immersing the metal wire covered with the etch protective layer in an etching solution. The method of claim 8, wherein at least one material selected from glass, diamond, gold, platinum, a molecular weight of 3000 or more, paraffin, epoxy is used as the etching protective layer, and the etching solution is hydrochloric acid, nitric acid, sulfuric acid, fluoride. A method for producing a microtube in a semiconductor local wet etching apparatus, characterized in that at least one substance selected from acid (fluoric acid), acetic acid, hydrogen peroxide water, and ammonia water is used. 8. The method according to claim 7, wherein the material coating step is performed by chemical vapor deposition and the thickness of the material to be coated is 0.5 um to 1 mm. 8. The apparatus of claim 7, wherein removing the coating material comprises contacting the coating material with a metal diffuser having a diffusion coefficient greater than the coating material to diffuse the coating material. Method for producing microtubules. 12. The method according to claim 11, wherein the diffusion step is performed at a high temperature of 300 DEG C or higher. 12. The method according to claim 11, wherein at least one material selected from CO, Ni, Mo, Mn, V, W and Ti is used as the metal diffusion material. The method of claim 7, wherein the removing of the coating material uses laser light, and the center line of the laser tube and the center line of the metal line form 2 to 170 degrees. . 8. The method of claim 7, wherein the step of removing the coating material is by exposing the tip to a plasma containing oxygen. The method of claim 7, wherein the removing of the coating material is performed by burning carbon into carbon dioxide in a high temperature atmosphere of 400 ° C. or higher including oxygen. The method of claim 7, wherein the removing of the metal wire is performed by etching an etchant including at least one selected from hydrochloric acid, nitric acid, sulfuric acid, fluoric acid (fluoric acid), acetic acid, hydrogen peroxide, and ammonia water. Method for producing microtubules in the device.