A7 456079 _B7____ 五、發明說明（1 ) 〔發明所屬之技術領域] 本發明係關於一種使用非線形光學結晶來發生高諧波 雷射光.，並將高波雷射光照射在多）電路板等之被 照射物，進行玎孔或作標記等之加工的加工用雷射裝置。 (以往之技術） 雷射被使用在印刷電路基板之散熱孔之打孔，薄膜， 金屬之切斷等之加工。 作爲印刷電路基板之加工用雷射，使用波長2 6 2至 3 5 5 mm之高輸出，高重複之紫外雷射'劣源。 在第5圖表示藉使用①之波長變換進行加工的加工用 裝置雷射10之槪略構成。 從雷射光源1 1所出射的雷射光係藉由聚光透鏡1 2 被聚光^並被入射在非線形光學結晶1。被入射在非線形 光學結晶1之雷射光的一部分被波長變換，之後從非線形 光學結晶1被出射，出射光係藉由聚光透鏡1 3被聚光並 被照射在被加工物1 4 <=作爲被使用之非線形光學結晶1 有例如L B 0，C L B〇等。 眾知上述之非線形光學結晶1之結晶軸與光軸所成的 角度，係波長變換效率被保持在稱爲最大之相位匹配角度 之角度•‘惟由於該角度係依存在晶之溫度，因此溫度有 變化時，截之·4Ι射功率會變化。故，非線形光學結晶1 係被控制成其溫度爲一定之狀態。 非線形光學結晶1之控制溫度，係在非線形光學結晶 -----------3 裝----1---訂---------^ν (請先閲讀背面之注音S事項再填寫本買) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -4 - 456079 Λ7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（2) 1之表面接觸如熱電偶1 5之溫度測定元件，並以加熱器 1 7等之加熱機構或泊耳帖（peltier )元件等冷卻機構覆 蓋整體非線形光學結晶。 之後將熱電偶1 5之輸出輸入至溫度調節器1 6 (以 下稱爲調溫器1 6 )。調溫器1 6係成爲事先設定之溫度 地，反饋所測定之非線形光學結晶之溫度，控制加熱機構 或冷卻機構之輸入’俾調節非線形光學結晶1之溫度。 又，爲了調整非線形光學結晶1之相位匹配角度，非 線形光學結晶1係被安裝於藉驅動裝置被驅動的角度調整 機構7上。 在第5圖圖示使用加熱器1 7來加熱非線形光學結晶 1之場合’以下’將加熱非線形光學結晶之場合作爲例子 加以說明。 來自加工雷射裝置1 0之輸出，係如下地調整。 ①將非線形光學結晶1加熱成設定之所定溫度，控制 成一定溫度。該狀態下，將雷射光源1 1之雷射光，入射 至非線形光學結晶1 1藉由未圖示之功率監測器受光經波 長變換輸出之雷射光。 0 —面觀看功率監測器之顯示1 一面使該値成爲最大 ，調整非線形光學結晶1之相位匹配角度，來決定配置非 線形光學結晶1之角度。 藉上述之加工用雷射裝置，進行多層印刷電路板之散 . 熱孔加工等之場合，藉檔門或Q - SW施以導通/斷開雷 射光，將脈衝狀之雷射光間歇地照射在被加工物。 ----I:-------}裝--------訂---------線J- (請先閱讀背面之注意事項再填寫本頁) · 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -5- 經濟部智慧財產局員工消費合作社印製 456079 A7 ____B7____ 五、發明說明（3 ) 在第6圖表示依雷射光的散熱孔加工之情形。 如第6 ( a )圖所示，平常在一枚基板上彤成有複數 照射領域A 1 ，A 2……，而在各照射領域A 1 ，A 2 ， ……設有複數開孔部位。藉由電流計等控制機構來掃描從 加工用雷射裝置所放出之雷射光，並定位在多層印刷電路 板之各開孔位置，在各開孔位置照射脈衝狀雷射先複數次 俾進行散熱孔加工。 亦即，如第6 ( d )圖所示地將半値全幅（峰値之1 /2時之脈衝幅）爲數10ns至數l〇〇ns，重複頻 率爲數KHz至數1 OKHz之雷射脈衝，在領域A1之 各開孔部位如第6 ( c )圖所示地照射複數次進行開孔加 工，當完成一個開孔則將雷射光移動至相同領域之下一開 孔位置，同樣地重複進行開孔之操作。 如此，當完成領域A 1之所有開孔時，如第6 ( b ) 圖所示，將雷射光成爲斷開，將雷射光移至下一領域A 2 ，進行同樣之開孔加工。 以下同樣地，依次進行多層印刷電路板之各領域A 1 ，A 2 .......之開孔加工，當完成一枚之多層印刷電路基 板之開孔時，則更換多層電路板，進行下一印刷電路板之 加工。雷射之射次數係例如加工一個孔出射成爲1至3 0 次。又在’第6 ( c )圖|刖開始雷射光之出射之後，雷射 光之火小逐漸變大，惟此乃如下所述地爲依非線形光學結 晶之內部溫度之上昇所產生之輸出變動。 如上所述，將加工用雷射裝置使用在多層印刷電路板 (請先閱讀背面之注意事項再填寫本頁) ；裝--------訂 -------線^* 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -6- 經濟部智慧財產局員工消費合作社印製 456079 A7 _______B7_ 五、發明說明（4 ) 之散熱孔等加工時，需要將業經加工處理之工件（多層印 刷電路板）更換成未處理之工件，或是在一片多層印刷電 路板內，移動照射雷射光之領域等之操作（將該操作稱爲 「段更換」）。 該段更換時間係平常需費數秒鐘至數1 0秒鐘（現狀 況有數分鐘）。進行段更換時，如第6圖所述，未進來自 雷射光源之雷射光出射，而加工用雷射裝置係未輸出雷射 。當完成段更換後，從雷射光源出射雷射光，將經波長變 換之雷射光照射在工件= (發明欲解決之課題） 上述非線形光學結晶係折射率依存於溫度而變化。如 此’隨著雷射光發生之藉非線彤光學結晶本體之自加熱使 光軸與結晶軸所成之最適當角度藉發年雷射光而變化，有 其輸 。 如此，平常非線形光學結晶係如上述第5圖所示地藉 加熱屬肩-it冷構被加熱或 ，使周圍溫度被保持成 一定。 但是，如在上述第6圖所述，有需以數至1 〇秒鑲 之時間間隔間歇地發生光時，由於過度地變化溫度。故很 難保持在‘一定。 第7圖係表示剛開始雷射光出射後之從非線形光學結 晶所出射之雷射光之功率變化的圖式；表示作爲非線形光 學結晶使用C L B 0結晶，且將C L B 0結晶之溫度如上 本纸張尺度適用中國國家標準（CNS>A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂----- 456079 A7 B? 經濟部智慧財產局員工消費合作社印製 五、發明說明（5) 述地控制成一定之場合，如同圖示，從剛開始雷射出射後 ，雷射功率係徐徐地上昇。 若雷射光輸出如第7圖地變化，則例如散熱孔加工之 場合，會產生散熱孔之深度變化，或切斷加工時切斷面之 形狀紊亂等實用上問題。實用上期望雷射光輸出之變動係 抑制在1 0 %以內。 本發明係鑑於上述之事項而創作者，本發明之目的係 在於將使用非線形光學結晶經波長變換之雷射光照射在被 加工物進行加工的加工用雷射裝置中，儘量減小藉段更換 等停止雷射光之出射後之雷射光的輸出功率變動較大，且 可進行良好加工。 (解決課題所用之手段） 爲了解決上述課題，在本發明中，加工用雷射裝置係 具備：測氣非線形光學結晶之溫i的測定溫度，及調 整非構’及依據 藉上述溫度測定手段所測定之非線形光學結晶之溫度，控 制上述_角度邋構的控制手段；在該控制手段，對於非 線形光學結晶之溫度，事先記憶最大輸出功率所得到之最 適當相位匹配角度。藉控制手段，隨著上述非線形光學結 晶之溫度’來控制非線形光學結晶之角度，俾將非線形光學 結晶5周整成通得到最大輸出功率之相位匹配角度。 在本發明中，由於作爲上述構成，因此不管非線形光 學結晶之溫度變化 > 可將非線形光學結晶之角度對於結晶 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公笼） -8- ------------0裝--------訂-------線V rtt先閲讀背面之>±.意事項再填寫本頁) 45 60 7 9 A7 B7 五、發明說明（e ) (請先閱讀背面之注意事項再填寫本頁) 溫度能維持保持最適當之相位匹配角度之角度，可減小雷 射光之輸出功率之變動。.如此，在加工用雷射裝置中，可 進行良好之加工。 (發明之實施形態） 第1圖係表示本發明之實施例的圖式。在第1圖係僅 表示雷射光源，非線形光學結晶及控制該非線形光學結晶 之角度的控制系統，其他之構成係被省略。 在第1圖中，1 1係雷射光源，1係LBO， C L B 0等之非線形光學結晶，非線形光學結晶1係載置 在保持具2內，非線形光學結晶1之溫度係藉感測器3被 測定。又未圖示惟非線形光學結晶1係藉加熱器被加熱成 所期望之溫度。 4係放大感測器3之輸出的讀出放大器，5係由電腦 等所構成之控制裝置。 經濟部智慧財產局員工消費合作社印製 以下說明本實施例之動作，惟在此前，首先，說明結 晶溫度與波長變換效率以及結晶溫度與相位匹配角度之關 係。 一般，非線形光學結晶之波長變換效率7?係，可用如 下（1 )式來表示 ΔΚ- L/2) } / (Ak L/2) a --(1) 式中，L係非線形光學結晶之光學性距離，△ k係入 射於非線形光學結晶之雷射與出射之雷射的波數相差，以 -9 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） 4 5 60 7 9 經濟部智慧財產局員工消費合作社印製 Λ7 B7 五、發明說明（7) 如下C 2 )式來表示。A7 456079 _B7____ V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method of using a non-linear optical crystal to generate high-harmonic laser light, and irradiating high-wave laser light to a plurality of) circuit boards, etc. Laser device for processing objects such as countersinking or marking. (Previous technology) Lasers are used for punching holes in heat dissipation holes of printed circuit boards, cutting films, and cutting metals. As a laser for the processing of printed circuit boards, a high output and highly repetitive UV laser source with a wavelength of 262 to 355 mm is used. Fig. 5 shows a schematic configuration of the laser device 10 for processing by using the wavelength conversion of ①. The laser light emitted from the laser light source 11 is condensed by the condenser lens 12 and is incident on the non-linear optical crystal 1. A part of the laser light incident on the non-linear optical crystal 1 is wavelength-converted, and is then emitted from the non-linear optical crystal 1. The emitted light is condensed by the condenser lens 1 3 and is irradiated on the workpiece 1 4 < = Examples of the non-linear optical crystal 1 to be used include LB 0, CLB0, and the like. It is well known that the angle formed by the crystal axis and the optical axis of the above-mentioned non-linear optical crystal 1 is the angle at which the wavelength conversion efficiency is maintained at the maximum phase-matching angle. • But because this angle depends on the temperature of the crystal, the temperature When there is a change, the cut-off 4I radio power will change. Therefore, the non-linear optical crystal 1 is controlled so that its temperature becomes constant. The control temperature of the non-linear optical crystal 1 is based on the non-linear optical crystal ----------- 3 equipment ---- 1 --- order --------- ^ ν (Please read first The note on the back is S. Please fill in this purchase.) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives. The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) -4-456079 Λ7 B7 Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the employee's consumer cooperative V. Description of the invention (2) The surface of 1 is in contact with the temperature measuring element of the thermocouple 15, and the entire non-linear shape is covered by a heating mechanism such as a heater 17 or a peltier element Optical crystallization. Then, the output of the thermocouple 15 is input to the temperature regulator 16 (hereinafter referred to as the temperature regulator 16). The thermostat 16 is a temperature set in advance, feedbacks the measured temperature of the non-linear optical crystal, and controls the input of the heating mechanism or the cooling mechanism 'to adjust the temperature of the non-linear optical crystal 1. In order to adjust the phase matching angle of the non-linear optical crystal 1, the non-linear optical crystal 1 is mounted on an angle adjusting mechanism 7 driven by a driving device. Fig. 5 illustrates a case where the non-linear optical crystal 1 is heated by using the heater 17 to describe the case where the non-linear optical crystal 1 is heated. The output from the processing laser device 10 is adjusted as follows. ① The non-linear optical crystal 1 is heated to a set predetermined temperature and controlled to a certain temperature. In this state, the laser light of the laser light source 11 is incident on the non-linear optical crystal 11 and the laser light received by a power monitor (not shown) is subjected to wavelength conversion and output by the laser light. 0 — View the display 1 of the power monitor on the one side to maximize the angle. Adjust the phase matching angle of the non-linear optical crystal 1 to determine the angle of the non-linear optical crystal 1. The above-mentioned laser device for processing is used for the dispersion of multilayer printed circuit boards. In the case of hot hole processing, the gate or Q-SW is used to turn on / off the laser light, and the pulsed laser light is intermittently irradiated on Processed object. ---- I: -------} Installation -------- Order --------- Line J- (Please read the precautions on the back before filling this page) · This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -5- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 456079 A7 ____B7____ 5. Description of the invention (3) The laser light is shown in Figure 6 The case of the processing of heat dissipation holes. As shown in FIG. 6 (a), a plurality of irradiation areas A 1, A 2,... Are usually formed on one substrate, and a plurality of openings are provided in each irradiation area A 1, A 2,... The laser light emitted from the processing laser device is scanned by a control mechanism such as a galvanometer, and is positioned at each opening position of the multilayer printed circuit board. A pulsed laser is irradiated at each opening position for a plurality of times to dissipate heat. Hole processing. That is, as shown in FIG. 6 (d), the full amplitude of the half chirp (the pulse amplitude at 1/2 of the peak chirp) is from 10ns to 100ns, and the repetition frequency is from several KHz to several OKHz lasers. Pulse, irradiate a plurality of times at each opening part of the area A1 as shown in Figure 6 (c) to perform the opening process. When one opening is completed, the laser light is moved to an opening position below the same area. Repeat the opening operation. In this way, when all the openings in the area A 1 are completed, as shown in FIG. 6 (b), the laser light is turned off, the laser light is moved to the next area A 2, and the same opening processing is performed. In the same manner below, the perforations of the areas A 1, A 2... Of the multilayer printed circuit board are sequentially performed. When the opening of one multilayer printed circuit board is completed, the multilayer circuit board is replaced. The next printed circuit board is processed. The number of laser shots is, for example, 1 to 30 shots per hole. Also after the "Fig. 6 (c) ||", when the laser light is emitted, the fire of the laser light gradually becomes larger, but this is the output change caused by the increase of the internal temperature of the non-linear optical crystal as described below. As mentioned above, use the laser device for processing on the multilayer printed circuit board (please read the precautions on the back before filling this page); install -------- order ------- line ^ * This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm)-6-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 456079 A7 _______B7_ V. Description of the invention (4) for heat dissipation holes, etc. Operations such as replacing a processed workpiece (multilayer printed circuit board) with an unprocessed workpiece, or moving an area irradiated with laser light within a multilayer printed circuit board (this operation is called "segment replacement"). This replacement time usually takes from several seconds to 10 seconds (the current situation is several minutes). During the stage replacement, as shown in Fig. 6, the laser light from the laser light source is not emitted, and the laser device for processing does not output the laser. When the stage replacement is completed, the laser light is emitted from the laser light source, and the laser light with wavelength conversion is irradiated on the workpiece = (Problem to be solved by the invention) The refractive index of the above-mentioned non-linear optical crystal system changes depending on the temperature. As a result, with the laser light generated by the self-heating of the non-linear optical crystal body, the most appropriate angle formed by the optical axis and the crystal axis changes with the annual laser light, which has its losses. In this way, the ordinary non-linear optical crystal system is heated by heating the cold shoulder-it cold structure as shown in Fig. 5 above to keep the surrounding temperature constant. However, as described in FIG. 6 above, when light needs to be generated intermittently at intervals of several seconds to 10 seconds, the temperature is excessively changed. So it ’s very difficult to stay at ‘certain. Figure 7 is a graph showing the power change of laser light emitted from a non-linear optical crystal immediately after the laser light is emitted; it shows that CLB 0 crystal is used as a non-linear optical crystal, and the temperature of the CLB 0 crystal is the same as the above paper scale Applicable to Chinese National Standards (CNS > A4 specifications (210 X 297 mm) (Please read the precautions on the back before filling this page)) -------- Order ----- 456079 A7 B? Ministry of Economic Affairs Printed by the Intellectual Property Bureau's Consumer Cooperatives. 5. Description of the Invention (5) As described above, as shown in the figure, after the laser has been emitted from the beginning, the laser power will rise slowly. When the map changes, for example, in the case of heat radiation hole processing, there will be practical problems such as the change in the depth of the heat radiation hole or the shape of the cut surface during cutting processing. Practically, it is expected that the fluctuation of the laser light output is suppressed to 10% The present invention was created in view of the above-mentioned matters, and an object of the present invention is to irradiate laser light that has been wavelength-converted by using a non-linear optical crystal to a processing laser device for processing. The output power of the laser light after stopping the laser light emission, such as the replacement of the borrowed segment, is as small as possible, and it can be processed well. (Means used to solve the problem) In order to solve the above problem, in the present invention, a processing laser is used. The radiation device is provided with: a measurement method for measuring the temperature i of the non-linear optical crystal of the gas, and adjusting the non-structural structure and the temperature of the non-linear optical crystal measured by the above-mentioned temperature measuring means to control the above-mentioned angle structure; The control means, for the temperature of the non-linear optical crystal, the most suitable phase matching angle obtained by memorizing the maximum output power in advance. By means of the control means, the angle of the non-linear optical crystal is controlled according to the temperature of the non-linear optical crystal, and The phase matching angle of the maximum output power is obtained after 5 weeks of integration. In the present invention, as the above-mentioned structure, regardless of the temperature change of the non-linear optical crystal > the angle of the non-linear optical crystal can be applied to the crystal paper size according to the Chinese national standard (CNS) A4 size (210 X 297 male cage) -8- ---- -------- 0 Pack -------- Order ------- Thread V rtt first read > ±. On the back and fill in this page) 45 60 7 9 A7 B7 V. Description of the invention (e) (Please read the precautions on the back before filling this page) The temperature can maintain the angle of the most appropriate phase matching angle, which can reduce the fluctuation of the output power of the laser light. In this way, the laser device for processing can perform good processing. (Embodiment of Invention) FIG. 1 is a diagram showing an embodiment of the present invention. In Fig. 1, only a laser light source, a non-linear optical crystal, and a control system for controlling the angle of the non-linear optical crystal are shown. The other components are omitted. In Fig. 1, 11 is a laser light source, 1 is a non-linear optical crystal of LBO, CLB 0, etc. Non-linear optical crystal 1 is placed in a holder 2, and the temperature of the non-linear optical crystal 1 is by a sensor 3. Be determined. Although not shown, the non-linear optical crystal 1 is heated to a desired temperature by a heater. 4 is a sense amplifier which amplifies the output of the sensor 3, and 5 is a control device composed of a computer or the like. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The operation of this embodiment will be described below, but before that, first, the relationship between the crystallization temperature and the wavelength conversion efficiency and the crystallization temperature and the phase matching angle will be described. In general, the wavelength conversion efficiency of the non-linear optical crystal is 7 ?, which can be expressed by the following formula (1): ΔΚ- L / 2)} / (Ak L / 2) a-(1) In the formula, L is the non-linear optical crystal. Optical distance, △ k is the difference between the wave number of the laser incident on the non-linear optical crystal and the laser emitted, with -9-this paper size applies the Chinese National Standard (CNS) A4 (210 χ 297 mm) 4 5 60 7 9 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Λ7 B7 V. Description of Invention (7) It is expressed by the following formula C 2).
Ak = 27c (η 3 / Α.3 — π2 / λ2 ~ η \ / λ \ ) …⑵ 式中，λ 1 ，λ 2係入射在非線形光學結晶的雷射之 波長，λ 3係從非線形光學結晶出射之經波長變換的雷射 之波長；η 1係對於波長λ ；l之折射率，藉由非線形光學 結晶對於物理光學座標之入射光的入射角（Θ )與其偏光 方位（0 )，及非線形光學結晶之溫度（τ )來決定^ 亦即，折射率η係如下（3 )式所示地作爲β0， Τ之函數來表示。 n = f {Θ, ¢. Τ) --(3) 因此，由（1) ’ （2) ’ （3)式’波長變換效率 7?係可作爲非線形光學結晶之溫度τ之函數來表示。 由上述（1 ) ，（ 2 ) ’ （ 3 )式，對於結晶溫度求 出波長變換效率β之例子係如第2圖所示。 在第2圖中，橫軸係某一相位匹配角度時，輸出功率 變成最大的結晶溫度Τ 〇之溫度差，縱軸係變換效率。如 同圖所示，結晶溫度爲Τ ◦而在最適當相位匹配角度時， 即使結晶溫度比Τ 〇高或低，變換輸出係均降低。 第3圖係表示非線形光學結晶之溫度差與相位匹配角 度偏差之關係之例子的圖式。在同圖中，橫軸係表示結晶 之溫度差；縱軸係表示來自相位匹配角度之角度偏差，例 如，結晶溫度爲Τ 〇時之相位匹配角度作爲0 〇，結晶溫 度成爲+ 5 °C偏差之C Τ 〇 + 5 7 °C，則相位匹配角度係 ---— ^------.裝 i -----—訂 -------線 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（2〗0 X 297公釐） -10- 456079 經濟部智慧財產局員工消費合作社印製 A7 B7_______ 五、發明說明（8) 約 〇 .4111『3〇1偏差，成爲0〇 + 〇.411113€1。 在此，將上述溫度差△ T與相位匹配角度偏差△ Θ之 關係表示爲△0 = f (△τ )，則非線形光學結晶之溫度 隨著雷射光照射而藉自加熱上昇△ T時，非線形光學結晶 之相位匹配度係成爲Θ = f ( △ T )偏差。 因此，結晶溫度之溫度爲T 〇。結晶之結晶軸被設成 在該時成爲最大變換效率的相位匹配角度β 0之場合，在 剛照射雷射光之後，變換效率成爲最大，惟非線形光學結 晶之溫度隨著雷射光照射而藉自加熱上昇△ Τ，則相位匹 配角度係從0 〇偏離△ Θ。 亦即，即使得雷射光之光軸與非線形光學結晶之結晶 軸之關係，在結晶溫度爲Τ 〇時成爲最適當之相位匹配角 度θ 〇 >當結晶溫度隨著雷射光照射而藉自加熱上昇ΛΤ 時，相位匹配角度係△ β = ί ( △ Τ )偏差，也降低變換 效率。 如此，在本實施例，係測定非線形光學結晶之溫度·， 隨著所測定之溫度來調整非線形光學結晶之結晶軸角度， 能使非線形光學結晶經常地維持在最適當之相位匹配狀態 〇 回到第1圖，以下，說明本實施例之動作。 從雷射光源1 1所放出之雷射光，係入射在L Β〇， C L Β 0等之非線形光學結晶1，經波長變換成兩倍波， 三倍波等之高諧波而從非線形光學結晶1出射。非線形光 學結晶1之溫度係藉感測器3被測定，經由讀出放大器4 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） -11 - ---.--------3 裝--------訂-------1線 (請先閱讀背面之沒意事項再填寫本頁) . 137 456079 五、發明說明（9) 被傳送至控制裝置5 ’控制裝置5係依據讀出放大器4之 輸出’將驅動裝置6施以驅動而藉角度移動機構7，對於 所入射之雷射光之光軸調整非線形光學結晶1之結晶軸之 角度。 在控制裝置5內，對於如上述第3圖所示之非線形光 學結晶之溫度，事先記憶著最大之輸出功率所得到之最適 當之相位匹配角度’控制裝置5係求出隨著測定之非線形 光學結晶之溫度的最適當相位匹配角度，控制非線形光學 結晶1之結晶軸之角度成爲最適當之相位匹配角度。 第4圖係表示本實施例之動作的時序圖；由同圖來說 明本實施例的動作。 在第4圖中，（a )係雷射之導通/斷開狀態；（b )係非線形光學結晶之溫度3 ( c )係結晶對於結晶溫度 之最適當相位匹配角度；控制裝置5係隨著所測定之溫度 ’調整結晶軸之角度成爲上述最適當之相位匹配角度。（ d )係如上述地藉控制裝置5控制結晶軸之角度時所得到 之雷射輸出。 又’ （e ) ’ （ ί )係表示未控制非線形光學結晶之 角度之場合的雷射輸出；（e )係表示相位匹配角度設成 結晶溫度爲T 1 (參照同圖（b )之虛線）時最適當之角 度之場合‘；（f )係表示相位匹配角度設成結晶溫度τ 2 (參照同圖（b )之虛線）時最適當之角度之場合。 又，在本實施例中’開如雷射光照射前係非線形光學 結晶之溫度爲T 〇 ，相位匹配角度係設成溫度τ 〇時可得 t請先閱讀背面之注意事項再填寫本頁) 「裝 .\1/- 訂---------線 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -12- 4 5 6 Ο 7 9 Α7 經濟部智慧財產局員工消費合作伍印挺 __ Β7五、發明說明（10) 到最大效率之0 0。 如第4 ( a )圖所示地雷射光成爲導通時’則非線开多 光學結晶1之溫度係如第4 ( b )圖所示地上昇。在控制 裝置5輸入有藉感測器3所測定之非線形光學結晶1之溫 度。控制裝置5係由表不於上述弟圖之非線形1光學結晶 之溫度差與相位偏差量之關係’求出隨著非線形光學結晶 1之溫度上昇A T的相位匹配角度之調整量△ β，使非線 形光學結晶1之角度調整成$ 0 +△ Θ。 由此，如第4 ( C )圖所示地非線形光學結晶1之角 度被調整，非線形光學結晶1之角度係成爲溫度Τ 〇 + AT之最適當相位匹配角度θ ο + ΔΘ。如此’如第4 ( d )圖所示地雷射輸出係維持在大約一定之大小，上述控 制裝置5係重複動作，調整非線形光學結晶之角度成能維 持最適當之相位匹配角度。 如上述地未進行非線形光學結晶之調整角度之場合， 雷射輸出係成爲第4(e) ， （f)圖。 亦即 > 相位匹配角度設定結晶溫度爲Τ 1，T 2時成 爲最適當之角度之場合，由於結晶溫度爲Τ 1 ，T 2時非 線形光學結晶之變換效率成爲最大，而雷射輸出係隨著結 晶溫度接近於Τ 1，T 2愈變大，而結晶溫度超過Τ 1， T 2愈變’小。因此，在此場合，如第4 ( e ) ，（ f )圖 所示地雷射輸出係成爲變動之狀態。 如上所述，在本發明中，由於測定非線形光學結晶之 溫度，隨著該溫度來調整非線形光學結晶之角度，因此， (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------線、〆 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -13- 456079 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（11) 不管可保持最適當之相位匹配 狀態，動。如此，在適用於加工用 雷射裝置之場合成t可進行良好之加工。 又也可考量以功率計等測定雷射裝置之輸出功率，會g 使輸出功率成爲一定地調整非線形光學結晶之溫度或角度 之方法。 該方法係在雷射光經常被輸出之雷射裝置具有效，惟 本發明作爲對象之間歇地輸出雷射光的雷射裝置之場合， 則在該方法，無法有效地抑制輸出變動，。亦即，在間歇地 輸出雷射光的雷射裝置適用上述方法之場合，在未輸出雷 射光之期間，將上述輸出功率成爲一定之控制系統係未進 行動作，成爲在每當輸出雷射光才能動作上述控制系統。 如此，在每當輸出雷射光有雷射光之輸出功率過度地變動 0 對於此，在本實施例之場合，即使未輸雷射光時，由 於也依據雷射之溫度來調整非線形光學結晶之角度，因此 ，不管休止期間之多少，除了可從剛出射雷射之後經常地 保持在能得到最大輸出之狀態之外，還可在輸出功率不會 產生上述過度性變動，又可將輸出功率控制成一定。 (發明之'效果） 如上所述由於加工用雷射裝置係具備：測定非線形光 學結晶之溫度的測定溫度手段，及調整非線形光學結晶之 結晶軸角度的角度移動機構t及依據藉上述溫度測定手段 -----------「^--------訂--------- 線- {請先閱讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -14- 4 5 60 7 9 A7 B7Ak = 27c (η 3 / Α.3 — π2 / λ2 ~ η \ / λ \)… ⑵ where λ 1 and λ 2 are the wavelengths of the laser incident on the non-linear optical crystal, and λ 3 is from the non-linear optical crystal The wavelength of the outgoing converted laser; η 1 is the wavelength λ; the refractive index of l is the incident angle (Θ) of the incident light to the physical optical coordinates and its polarization orientation (0) by the non-linear optical crystal, and the non-linear The temperature (τ) of the optical crystal is determined ^ That is, the refractive index η is expressed as a function of β0, T as shown in the following formula (3). n = f {Θ, ¢. Τ)-(3) Therefore, (1) ′ (2) ′ (3) Equation ′ wavelength conversion efficiency 7? can be expressed as a function of the temperature τ of the non-linear optical crystal. An example of determining the wavelength conversion efficiency β with respect to the crystallization temperature from the above formulas (1) and (2) '(3) is shown in Fig. 2. In Figure 2, when the horizontal axis is at a certain phase-matching angle, the output power becomes the maximum temperature difference of the crystallization temperature To, and the vertical axis is converted efficiently. As shown in the same figure, the crystallization temperature is T. At the most suitable phase matching angle, even if the crystallization temperature is higher or lower than T0, the conversion output is reduced. Fig. 3 is a diagram showing an example of the relationship between the temperature difference of the non-linear optical crystal and the deviation of the phase matching angle. In the figure, the horizontal axis represents the temperature difference of the crystal; the vertical axis represents the angular deviation from the phase matching angle. For example, the phase matching angle when the crystallization temperature is T 〇 is 0 〇, and the crystallization temperature becomes + 5 ° C deviation C Τ 〇 + 5 7 ° C, then the phase matching angle is ----- ^ ------. Install i ------ order ------- line (please read the first Note: Please fill in this page again.) This paper size is in accordance with Chinese National Standard (CNS) A4 specification (2〗 0 X 297 mm) -10- 456079 Printed by A7 B7 _______ of the Consumer Cooperatives of Intellectual Property Bureau of the Ministry of Economic Affairs. ) About 0.411 [3〇1 deviation becomes 0〇 + 0.411113 € 1. Here, the relationship between the temperature difference Δ T and the phase-matching angle deviation Δ Θ is expressed as Δ0 = f (Δτ). When the temperature of the non-linear optical crystal rises by heating with the laser light, Δ T is non-linear. The phase matching of optical crystals is a deviation of Θ = f (Δ T). Therefore, the temperature of the crystallization temperature is T 0. When the crystal axis of the crystal is set to the phase matching angle β 0 which is the maximum conversion efficiency at this time, the conversion efficiency is maximized immediately after the laser light is irradiated, but the temperature of the non-linear optical crystal is self-heated with the laser light. As △ T rises, the phase matching angle deviates from △ Θ by 0 〇. That is, the relationship between the optical axis of the laser light and the crystal axis of the non-linear optical crystal becomes the most appropriate phase matching angle θ 〇 when the crystallization temperature is T 〇 > when the crystallization temperature is self-heated with the laser light irradiation When increasing ΛΤ, the phase matching angle is △ β = ί (△ Τ) deviation, which also reduces the conversion efficiency. Thus, in this embodiment, the temperature of the non-linear optical crystal is measured, and the crystalline axis angle of the non-linear optical crystal is adjusted with the measured temperature, so that the non-linear optical crystal can always be maintained in the most appropriate phase matching state. FIG. 1 illustrates the operation of this embodiment below. The laser light emitted from the laser light source 11 is incident on a non-linear optical crystal 1 such as L Β〇, CL Β 0, etc., and is converted from a non-linear optical crystal by wavelength conversion into high harmonics such as double wave and triple wave. 1 shot. The temperature of the non-linear optical crystal 1 is measured by the sensor 3. The paper size is applied to the Chinese National Standard (CNS) A4 specification (210 x 297 mm). -11----.---- ---- 3 Packing -------- Order ------- 1 line (please read the unintentional matter on the back before filling this page). 137 456079 V. Description of Invention (9) To the control device 5 'The control device 5 is based on the output of the sense amplifier 4 and drives the driving device 6 by the angular movement mechanism 7 to adjust the angle of the crystal axis of the non-linear optical crystal 1 with respect to the optical axis of the incident laser light . In the control device 5, for the temperature of the non-linear optical crystal as shown in the above-mentioned FIG. 3, the most suitable phase matching angle obtained by memorizing the maximum output power in advance is obtained. The control device 5 determines the non-linear optical The most suitable phase matching angle of the temperature of the crystal, and the angle of controlling the crystal axis of the non-linear optical crystal 1 becomes the most suitable phase matching angle. Fig. 4 is a timing chart showing the operation of this embodiment; the operation of this embodiment will be described with reference to the same figure. In Figure 4, (a) is the on / off state of the laser; (b) is the temperature of the non-linear optical crystal 3 (c) is the most suitable phase matching angle of the crystal for the crystallization temperature; the control device 5 is The angle at which the measured temperature 'adjusts the crystal axis becomes the most appropriate phase matching angle described above. (D) is the laser output obtained when the angle of the crystal axis is controlled by the control device 5 as described above. Also '(e)' (ί) indicates the laser output when the angle of the non-linear optical crystal is not controlled; (e) indicates that the phase matching angle is set to the crystallization temperature T 1 (refer to the dotted line in the same figure (b)) (F) represents the most suitable angle when the phase matching angle is set to the crystallization temperature τ 2 (see the dotted line in the same figure (b)). Also, in this embodiment, 'the temperature of the non-linear optical crystal before the laser light is irradiated is T 〇, and the phase matching angle is set to a temperature τ 〇 can be obtained, please read the precautions on the back before filling this page) " Packing. \ 1 /-Order --------- Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Paper size Applicable to China National Standard (CNS) A4 (210 X 297 mm) -12- 4 5 6 Ο 7 9 Α7 Consumption cooperation between employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Wu Yinting __ Β7 V. Description of invention (10) to the maximum efficiency of 0 0. As shown in Figure 4 (a) when the laser light becomes conductive, then The temperature of the non-linear optical crystal 1 rises as shown in Fig. 4 (b). The temperature of the non-linear optical crystal 1 measured by the sensor 3 is input to the control device 5. The control device 5 is indicated by a table Based on the relationship between the temperature difference and the phase deviation of the non-linear optical crystal 1 in the above figure, the adjustment amount Δ β of the phase matching angle of the AT as the temperature of the non-linear optical crystal 1 rises, and the angle of the non-linear optical crystal 1 is adjusted to $ 0 + △ Θ. Therefore, as shown in Figure 4 (C) The angle of the optical crystal 1 is adjusted, and the angle of the non-linear optical crystal 1 becomes the most appropriate phase matching angle θ ο + ΔΘ of the temperature T 0 + AT. Thus, as shown in FIG. 4 (d), the laser output system is maintained at about With a certain size, the control device 5 repeats the operation to adjust the angle of the non-linear optical crystal to maintain the most appropriate phase matching angle. As described above, when the angle of the non-linear optical crystal is not adjusted, the laser output system becomes the fourth ( Figures e), (f). That is, when the phase matching angle is set to T1, T2 becomes the most appropriate angle. Since the crystallization temperature is T1, the conversion efficiency of the non-linear optical crystal at T2 becomes The maximum laser output is that as the crystallization temperature approaches T1, T2 becomes larger, while the crystallization temperature exceeds T1, T2 becomes smaller. Therefore, in this case, as in Section 4 (e), ( f) The laser output system shown in the figure is in a state of fluctuation. As described above, in the present invention, since the temperature of the non-linear optical crystal is measured, the angle of the non-linear optical crystal is adjusted with the temperature. Therefore, (please read the precautions on the back before filling in this page). -------- Order --------- The standard of the paper and paper is applicable to China National Standard (CNS) A4. (210 X 297 mm) -13- 456079 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (11) Regardless of the most appropriate phase matching state, it can be moved. In this way, it is suitable for processing mines The field synthesis t of the radiation device can be processed well. Also, the output power of the laser device can be measured by using a power meter, etc., which will make the output power a certain method for adjusting the temperature or angle of the non-linear optical crystal. This method is effective in a laser device in which laser light is often output. However, in the case of a laser device in which laser light is output intermittently as an object of the present invention, in this method, output fluctuation cannot be effectively suppressed. That is, when the above-mentioned method is applied to a laser device that intermittently outputs laser light, the control system that makes the output power constant during the period when laser light is not output is not operated, and only operates when the laser light is output. The above control system. In this way, the output power of the laser light changes excessively whenever the laser light is output. For this, in the case of this embodiment, even if the laser light is not input, because the angle of the non-linear optical crystal is adjusted according to the temperature of the laser, Therefore, regardless of the rest period, in addition to being able to maintain the maximum output status immediately after the laser is emitted, it can also prevent the above-mentioned excessive changes in output power and control the output power to a certain level. . (Effects of the Invention) As described above, since the laser device for processing includes a temperature measuring means for measuring the temperature of the non-linear optical crystal, and an angle moving mechanism t for adjusting the angle of the crystal axis of the non-linear optical crystal, the above-mentioned temperature measuring means is used. ----------- 「^ -------- Order --------- Line-(Please read the precautions on the back before filling this page) This paper size Applicable to China National Standard (CNS) A4 (210 X 297 mm) -14- 4 5 60 7 9 A7 B7
經濟部智慧財產局員工消費合作社印製 五、發明説明（12) 所測定之非線形光學結晶之溫度，控制上述角度移動機構 的控制手段；在該控制手段，對於非線形光學結晶之溫度 ，事先記憶最犬輸出功率所得到之最適當相位匹配角度。 將非線形光學結晶調整成能得到最大輸出功率之相位匹配 角度，因此可減小雷射光之輸出功率之變動，在雷射光間 歇性地輸出之加工用雷射裝置中，可進行良好之加工。 (圖式之簡單說明） 第1圖係表示本發明之實施例的圖式。 第2圖係表示結晶溫度與變換效率之關係的圖式。 第3圖係表示非線形光學結晶之溫度差與相位匹配角 度偏差的圖式。 第4 ( a )圓至第4 ( ί )圖係表示本發明之實施例 之動作的時序圖。 第5圖係表示藉波長變換進行加工之加工用雷射裝置 之槪略構成的圖式。 第6 (a)圖至第6(d)圖係表示依雷射光之散熱 孔加工之情形的圖式。 第7圖係表示剛開始雷射光出射後之雷射光之功率變 化的圖式。 (記號之說明） 1 :非線形光學結晶，2 :保持具.，3 :感測器，4 :讀出放大器，5 :控制裝置，6 :驅動裝置，7 :角度 移動機構，1 0 :加工雷射裝置，1 1 :雷射光源，1 2 ，1 3 :聚光透鏡，1 4 :被加工物，1 5 .丨熱電偶對， 1 6 :調溫器，1 7 :加熱器。 本紙叛尺度適用中國國家標準（CNS ) A4規格（210X297公釐） _ 15 _ I 1 — n n 裝 n 11 線 (請先閲請背面之注意事項再填寫本頁)Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (12) The temperature of the non-linear optical crystal measured by the control means to control the angular movement mechanism. In this control method, the temperature of the non-linear optical crystal is memorized in advance. The most suitable phase matching angle obtained by the dog output power. The non-linear optical crystal is adjusted to a phase matching angle that can obtain the maximum output power, so the fluctuation of the output power of the laser light can be reduced, and a good processing can be performed in the processing laser device that intermittently outputs the laser light. (Brief Description of the Drawings) FIG. 1 is a drawing showing an embodiment of the present invention. Fig. 2 is a graph showing the relationship between the crystallization temperature and the conversion efficiency. Fig. 3 is a graph showing a temperature difference and a phase matching angle deviation of a non-linear optical crystal. Figures 4 (a) to 4 (ί) are timing charts showing the operation of the embodiment of the present invention. Fig. 5 is a diagram showing a schematic configuration of a processing laser device for processing by wavelength conversion. Figures 6 (a) to 6 (d) are diagrams showing the processing of heat radiation holes by laser light. Fig. 7 is a diagram showing the power change of the laser light immediately after the laser light is emitted. (Description of symbols) 1: Non-linear optical crystal, 2: Holder, 3: Sensor, 4: Readout amplifier, 5: Control device, 6: Driving device, 7: Angle moving mechanism, 10: Processing mine Radiation device, 1 1: laser light source, 1 2, 1 3: condenser lens, 1 4: workpiece, 1 5. 丨 thermocouple pair, 16: thermostat, 17: heater. This paper uses the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 15 _ I 1 — n n installed n 11 wires (please read the precautions on the back before filling this page)