經濟部中夬標隼局貝工消資合作社印装 45 60 5 7 A 7 - _ B7 五、發明説明（1 ) 發明背景 本發明係關於金氧矽結構的新用途，可以藉由電激發 產生光，而變成發光二極體。雖然金氧矽（Metal-Oxide-Silicon，簡稱1403)結構在 1959 年即由 Moll, Pfann，及 Garrett提出’但在本發明提出前，從未被用來做為電激 發產生光的用途。金氧矽結構最先是用來做為電壓控制的 電容器’ 1970年Boyle和Smith提出了電荷耗合的觀念， 而做出了電荷耦合元件（Charge-Coupled Device，CCD)，目 前是CCD camera和數位相機的關鍵元件。到了 1980年 代，MOS更成為積體電路中極重要的結構，由N型和P 型 MOS 場效電晶體（MOSFET)合成所做之 CMOS (complementary metal-oxide-semiconductor)並立成 為超大型積體電路（VLSI)或極大型積體電路(ULSI)中最重 要的元件。甚至在太陽能電池中，MOS也是極受重視的 結構。雖然MOS在電子領域中扮演了非常重要的角色， 但是由於砂（Silicon)的間接能隙（indirect bandgap)，使得 MOS可能發米的情形不被看好。本發明提出的創新構想 可以不受石夕（Silicon)的間接能隙（indirect bandgap)所限 制，使;e夕也能產生光β 此新型金氧矽發光二極體的基本原理在於應用量子力 學的穿隧效應（TunneUng effect)。由量子力學的理論計算 得知’當氧化層的厚度薄到數奈米（nm)時，電子進行穿隧 (tunneling)的機率將大幅增加，此穿遂機率（tunneling probability)會隨正向偏壓之增加而增加，但是氧化層並不 本紙玦尺度適用中國國家操準（CNS ) A4规格（2l〇X297公釐） ---.--^-----.:-裝-------1Τ-I.----線 (+請先随讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消f合作社印製 456057 A7 B7 五、發明説明（2 ) 是導體，所以仍然有不小的電壓跨在氧化層的兩端，也就 是說，金屬和梦半導體有不同的電壓，於是導致矽半導體 的能帶彎曲。若是P型矽’在負向偏壓下（金屬接負電壓， 石夕半導體接正電壓）’在氧化層和石夕半導體的介面附近， 矽半導體的能帶彎向上’所以形成電洞的位能井（potentiai well)，而大量累積電洞’此時又有大量的電子從金屬端 藉由穿隧效應（tunneling effect)到達此電洞的位能井 (potential well)位置’因此大量的電子和電洞可在此處復 合（recombination)而發出光子。若是n型矽，其藉由電激 發而產生光子的原理也可依此類推。 本發明突破了傳統上對金氧矽結構的認知，使其也能 做為發光元件之用。此突破乃是因為我們從基本量子力學 出發’重新認識金氧石夕結構的穿隨效應（tunneling)，及其 可能對元件特性的影響，特別是突破了矽半導體不能發光 的迷思。而實作上也成功地成長極薄的氧化層’使得電子 的穿隨效應（tunneling effect)可以發生，並驗證了金氧矽 (MOS)結構的電激發光（electroluminescence)特性。 發明概述 本發明突破過去固態物理思想及技術的習知，以創新 的觀念，使得MOS可藉由電激發而產生光子。基於發明 人對量子.力學及半導體元件物理的深入瞭解，知道厚度薄 到數奈米（nm)之氧化層可以有以下特性： ι_可以讓電子以穿隧效應通過，而此穿隧機率（tunneHng probability)隨所加電壓之增加而快速增加。 -----：-----^ : .1 裝-- (_請先閲讀背面之注意事項再填寫本頁) *tr·. -¾ 45 60 57 A7 B7 經 中 夬 標 準 Mi % X. 消 費 合 作 杜 印 製 五、發明説明（3 ) 2_提供金屬和半導體間一個電位差，使穿隨通過後的電子 可以由高能階躍遷到低能階，或是和電洞結合，所以可 以放出對應能量，的光子。 3. 因為金屬和半導體間的電位差，所以在氧化層和發半導 體的介面附近，矽半導體的能帶彎曲，.形成電子或電洞 的位能井’而累積大量的電子或電洞，因此大大增加其 由高能階躍遷到低能階，或是互相結合以產生光子的機會。 4. 因為石夕半導體在介面附近之週期性終止，所以對動量守 恆的需求減少，使#放光性復合（radiative recombination) 的機率大大增加。 因此本發明提出使用矽半導體與金屬夾住一極薄的氧化 層，可做為發光二極體β此極薄.的氧化層可由多種方法產 生’使矽表面和氧接觸’或是藉由層積的方式，在適當的 條件下長出極薄，且無甚缺隙的氧化層。然後在此氧化層 上鑛上金屬，而形成金氧矽發光二極體（Metal_〇xidei Silicon Light Emitting Diode，MOSLED)。 由於此金氧矽發光二極體之MOS結構的製輊與傳統 MOS結構的製程一樣，且是做在；g夕晶板上，因此可以和 目前的矽晶片積體電路完全整合在一起，使得矽晶片不僅 可以有電子產品上的應用，也可以做為發光元件，而電子 b日片與發光元件的单石整合（Monolithic integration )，可 以更加擴大矽晶片及矽材料的應用範圍。而且此金氧矽發 光二極體之MOS結構和製程都相當簡單，製作成本低廉， 本紙法尺度適用t國國家榇準（CNS ) A4規格（2I0XZ97公釐） (請先聞請背面之注意事項再填寫本頁} .D^— . ---^fil i 11 1 n —Ha mt 1 I f^n - I I —Printed by the Ministry of Economic Affairs of the Ministry of Economic Affairs of the Beihai Consumers Cooperatives 45 60 5 7 A 7-_ B7 V. Description of the invention (1) Background of the invention The present invention relates to a new use of gold oxide silicon structure, which can be generated by electrical excitation. Light instead of light emitting diodes. Although Metal-Oxide-Silicon (abbreviated as 1403) structure was proposed by Moll, Pfann, and Garrett in 1959, it was never used for the purpose of generating light by electro-stimulation before the invention was proposed. The metal oxide silicon structure was first used as a voltage-controlled capacitor. In 1970, Boyle and Smith proposed the concept of charge depletion and made a charge-coupled device (CCD). Currently, they are CCD cameras and digital Key components of the camera. In the 1980s, MOS became a very important structure in integrated circuits. CMOS (complementary metal-oxide-semiconductor) made of N-type and P-type MOS field-effect transistor (MOSFET) synthesis and became a very large integrated circuit. (VLSI) or very large integrated circuit (ULSI). Even in solar cells, MOS is a highly regarded structure. Although MOS plays a very important role in the electronics field, the indirect bandgap of silicon (Silicon) makes the situation that MOS may produce rice is not optimistic. The innovative concept proposed by the present invention can not be restricted by the indirect bandgap of Silicon, so that E can also produce light β. The basic principle of this new type of gold oxide silicon light emitting diode is to apply quantum mechanics Tunneling effect (TunneUng effect). From the theoretical calculations of quantum mechanics, it is known that when the thickness of the oxide layer is as thin as a few nanometers (nm), the probability of tunneling by the electron will increase greatly, and the tunneling probability will be biased with the forward direction. The pressure increases with the increase, but the oxide layer is not the size of the paper. It is applicable to China National Standards (CNS) A4 (2l0x297 mm) ---.-- ^ -----.: ----- ---- 1Τ-I .---- line (+ Please read the notes on the back before filling this page) Printed by the staff of the Central Bureau of Standards, Ministry of Economic Affairs, Cooperative 456057 A7 B7 V. Description of the invention (2) It is a conductor, so there is still a large voltage across the oxide layer, that is, the metal and Dream Semiconductor have different voltages, which causes the energy band of the silicon semiconductor to bend. If the P-type silicon is under a negative bias (metal is connected to a negative voltage and Shixi Semiconductor is connected to a positive voltage), near the interface between the oxide layer and Shixi Semiconductor, the energy band of the silicon semiconductor is bent upwards, so the potential of the hole is formed. Potentiai well, and a large number of accumulated holes 'At this time, a large number of electrons reach the potential well position of this hole from the metal end through a tunneling effect', so a large number of electrons And holes can be recombined here to emit photons. In the case of n-type silicon, the principle of generating photons by electrical excitation can also be deduced by analogy. The invention breaks through the traditional understanding of the structure of metal oxide silicon, so that it can also be used as a light emitting element. This breakthrough is because we start from basic quantum mechanics and re-understand the tunneling effect of the oxite structure and its possible impact on the characteristics of the device, especially the myth that silicon semiconductors cannot emit light. In practice, a very thin oxide layer has also been successfully grown so that the tunneling effect of electrons can occur, and the electroluminescence characteristics of the metal-oxide-silicon (MOS) structure have been verified. Summary of the Invention The present invention breaks through the past knowledge of solid state physics ideas and technologies, and uses innovative concepts to enable MOS to generate photons by electrical excitation. Based on the inventor's in-depth understanding of quantum mechanics and semiconductor device physics, it is known that an oxide layer as thin as a few nanometers (nm) can have the following characteristics: ι_ can allow electrons to pass through the tunneling effect, and this tunneling probability ( tunneHng probability) increases rapidly as the applied voltage increases. ----- ： ----- ^: .1 Pack-(_Please read the notes on the back before filling this page) * tr ·. -¾ 45 60 57 A7 B7 Warp standard Mi% X Consumer Cooperation Printed by Du V. Description of the Invention (3) 2_ Provide a potential difference between the metal and the semiconductor, so that the electrons passing through can be transitioned from a high energy level to a low energy level, or combined with an electric hole, so it can release the corresponding Photons of energy. 3. Because of the potential difference between the metal and the semiconductor, the energy band of the silicon semiconductor is bent near the interface between the oxide layer and the semiconductor. The potential energy wells that form electrons or holes accumulate a large number of electrons or holes. Increase their chances of transitioning from high-energy steps to low-energy steps, or combining them to produce photons. 4. Because Shixi Semiconductor periodically terminates near the interface, the demand for momentum conservation is reduced, which greatly increases the probability of #radiative recombination. Therefore, the present invention proposes to use a silicon semiconductor and a metal to sandwich an extremely thin oxide layer, which can be used as the light emitting diode β, which is an extremely thin oxide layer. The oxide layer can be generated by various methods to 'contact the silicon surface with oxygen' or through By the way, the oxide layer grows very thin and without gaps under appropriate conditions. Then metal is deposited on this oxide layer to form a Metal Oxide Silicon Light Emitting Diode (MOSLED). Because the fabrication of the MOS structure of this metal-oxide-silicon light-emitting diode is the same as that of the traditional MOS structure, and it is made on the crystal board, it can be fully integrated with the current silicon chip integrated circuit, making Silicon wafers can be used not only in electronic products, but also as light-emitting elements. Monolithic integration of electronic b-sheets and light-emitting elements can further expand the application range of silicon wafers and silicon materials. In addition, the MOS structure and manufacturing process of this metal-oxide-silicon light-emitting diode are quite simple, and the production cost is low. The paper scale is applicable to the national standard (CNS) A4 specification (2I0XZ97 mm) of the paper. Refill this page} .D ^ —. --- ^ fil i 11 1 n —Ha mt 1 I f ^ n-II —
__^ly I L_______s) y Am- im t 1)^1 n-^i n^— H^J ·ΒΛ^ J • n^i Hr— n^— _ 經濟部中央榇準局員工消費合作社印製 456057 A7 . B7_ 五、發明説明（Ο — ；~__ ^ ly I L_______s) y Am- im t 1) ^ 1 n- ^ in ^ — H ^ J · ΒΛ ^ J • n ^ i Hr— n ^ — _ Printed by the Employees' Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs 456057 A7. B7_ V. Description of the invention (〇 —; ~
可以直接和ic工業社人，邮，、,g L '、'，口 〇 所以具有相當大的實用價值。 圖示之簡單說明 圖一係金氧矽發光二極體構造之剖面圖，矽半導體可以是 P型或N型，氧化層的厚度是奈米（nm)。 圖二顯示了本發明之金氧矽發光二極體構造的製程實施 例β 圖三⑷和⑻分別顯示了 ρ㉟錢矽發光二極體和Ν型金 氧矽發光二極體在未加偏壓下的能帶結構圖。 圖四（a)和（b)分別顯示了 ρ型金氧矽發光二極體和Ν型金 氧矽發光二極體在金屬分別接負向與正向偏壓下的電路 圖。 圖五（a)和（b)分別顯示了 P型金氧矽發光二極體和N型金 氧矽發光二極體在金屬分別接負向與正向偏壓下的能帶結 構圖。 圖六顯示了金氡石夕發光二極體在適當偏壓下的電流—電壓 特性圖。 圖七顯示了金氧矽發光二極體在適當偏壓下的光強度_電 流特性圖。 圖八顯示了金氧矽發光二極體的發光光譜。 本紙張瓦g：通用中國國家梯準（CNS)八视格（21〇><297公变） (請先閲讀背面之注意事項再填寫本買) 裝' 訂 經濟部中夹操準局β：工消費合作社印製 456057 A7 - ~____B7 ____ 五、發明説明（5 ) 金氣發結構電激發放光（Electro丨u min esce nee)之詳細說明 ... 為了避免P型和N型半導體同時說明時可能造成的混 浠’在此說明中將只以P型半導體上之金氧矽發光二極體 為例。如圖一所示之金氧矽發光二極體構造，此矽晶片〇) 設為p型半導體’（2)為超薄層氧化層，（3)為金屬。在未 加偏壓時’其能帶結構圖如圖三（a)所示’在熱平衡下， 能帶是彎曲的’此時沒有電流流通，所以不會放光。當金 屬端加上負電壓時’此彎曲之能帶逐漸拉平，但在完全拉 平之前’由於從金屬穿隧過來的電子仍需越過一些能階障 礙（potential barrier)，所以電流仍然不大。另一方面，因 為能帶仍向下彎曲’所以靠近矽氧化層之介面附近沒有累 積電洞’因此不會有相當數量的電子電洞復合發生。 當金屬端之負電壓繼續增加到能帶完全拉平時，此時 的電壓稱為平帶電壓（Flat band voltage)，從金屬穿隧過來 的電子所需越過的能階障礙也減少，所以電流增加。而負 電壓繼續增加時’能帶變成向上彎曲，於是從金屬穿隧過 來的臂手不需’越過任何能階障礙，並且因為氧化層之能帶 在金屬端成為三角錐，如圖五（a)所示，根據量子力學之 WKB法知道’穿隧機率大為提高，所以電流急速增加（稱 為tuimeling電流）。圖六顯示了金氧矽發光二極體在正向 偏壓下的電流_電壓特性圖’此圖顯示在電壓大於平帶電 壓下，電流急速增加。 在能帶向上變曲的時候’價電帶（valence band)靠近石夕 美層之介面附近形成電洞之位能井，因此累積了大量的 本紙張尺度適用中國國家樣华（CNS ) A4» ( 210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 、裝 訂 ni 經濟部中央揉準局員工消贽合作社印裝 4 5 60 5 7 A7 . _______B7五'發明説明（6) 電洞，而同時又有大量的電子從金屬端穿隧過來到達矽氧 化層之介面附近，所以有相當數量的電子電洞復合發生。 另一方面’因為矽晶體在石夕氧化層之介面處，週期遭到中 斷’所以電子電洞的動量與bulk矽半導體中不同，使得 原來並不滿足動量守恆以致於不能放光的情形改變，於是 電子電洞之放光性復合可以有較高的機率，而在電流增大 之下，放出可觀的光。圖七顯示了金氧矽發光二極體在正 向偏壓下的光強度-電流特性圖。而透過電子電丨同之放光 性復合之發光光譜如圖八所示，此中心波長對應到石夕半導 體之能隙能量Eg (Bandgap energy)。能隙能量會隨溫度升 高而稍為減少，所以在電流增加時，熱效應使得溫度升高， 因此圖八所示之發光光譜隨電流增加而有紅位移。 除了透過電子電洞之放光性復合外，當金屬端之負電 壓繼續增加’則金屬之件米級（Fermi level)繼續上升，於 是從金屬端穿隨過來到達；δ夕的電子將不只進入石夕導電帶 (conduction band)的最低點，也可以進入較高能量的導電 帶位置。事實上’穿隧進入較高能量之導電帶位置的電子 數將因以下二因素而比進入導電帶最低點的電子數多： (1) 因矽導電帶的能階密度隨能量增加而增加； (2) 進入碎導電<ητ最低點的電子在穿随時，面臨的能階障 礙隨金屬端之負電壓增加而增加，所以其穿隧機率反而 降低。 以上二因素造成兩個結果’第一是進入矽導電帶最低點的 電子減少’所以透過電子電洞之放光性復合減少，甚至消 本紙浪尺度適用中國國家標準·（ CNS ) Α4規格（210X297公瘦） (請先閎讀背面之注意事項再填寫4頁) 裝. 1Τ ―j, 456057 A7 B7 五、發明説明（7 ) 失°第二是，雖然透過電子電洞之放光性復合減少，但穿 隨進八較咼的導電帶位置的電子數增加，而且tb進入導電 帶最低點的電子數多，所以在高能量導電帶與導電帶最低 點間形成居量反轉（population inversion)，所以可以放出 所對應的光’其放光頻率（波長）會隨所加電壓改變，可以 從遠紅外線到近紅外線，甚至於到可見光。因此，本發明 使用金氧矽結構’不僅能產生對應矽半導體之能隙.能量Eg 的光’也可以產生從遠紅外線到可見光波長範圍的光。 以上說明雖只針對P型半導體上之金氧矽發光二極 體’對於N型或未攙雜半導體上之金氧矽發光二極體， 其發光過程可以類推β 綜上所述，本發明基於突破性的觀念創新，使過去侷 限於電子領域的金氧矽結構也可以電激發的方式放光，將 對未來的矽半導體工業及應用產生深遠的影響。 (_請先閱讀背面之注意事項再填寫本育) 裝. 訂 經濟部中央榇準局員Η消費合作社印袈 i張 -紙 I本 一適 準 榇 家 Μ ) Ns 一公 7 9 2 煩諸·妾員^-^^/::^作日所提之 修正本有無變更實質内容是否准予修K0-It can directly communicate with the people of IC Industry Co., Ltd., G, L, G, L, and G. So it has considerable practical value. Brief description of the diagram Figure 1 is a cross-sectional view of a metal-oxide-silicon light-emitting diode structure. The silicon semiconductor can be a P-type or an N-type, and the thickness of the oxide layer is nanometers (nm). FIG. 2 shows a manufacturing process example of a gold-oxide-silicon light-emitting diode structure according to the present invention. FIG. 3 and FIG. 3 respectively show a p-type silicon-silicon light-emitting diode and an N-type gold-oxide-silicon light-emitting diode without being biased. The band structure diagram below. Figures 4 (a) and (b) show the circuit diagrams of ρ-type MOS silicon light-emitting diodes and N-type MOS silicon light-emitting diodes when the metal is connected to negative and forward bias, respectively. Figures 5 (a) and (b) show the band structures of P-type MOS silicon light-emitting diodes and N-type MOS silicon light-emitting diodes when the metal is connected to negative and forward bias, respectively. Figure 6 shows the current-voltage characteristics of the ochre stone luminescent diode under appropriate bias. Figure 7 shows the light intensity-current characteristics of a metal-oxide-silicon light-emitting diode under an appropriate bias. Figure 8 shows the emission spectrum of a metal-oxide-silicon light-emitting diode. This paper tile g: GM China National Standard (CNS) eight-view grid (21〇 > < 297 public change) (please read the precautions on the back before filling in this purchase) β: Printed by the Industrial and Consumer Cooperatives 456057 A7-~ ____ B7 ____ V. Description of the Invention (5) Detailed explanation of the electro-luminescence of the gold gas generating structure (Electro 丨 u min esce nee) ... In order to avoid P-type and N-type semiconductors At the same time, the possible mix-ups in the description will be described in this description using only a gold-oxide-silicon light-emitting diode on a P-type semiconductor as an example. As shown in the gold oxide silicon light emitting diode structure shown in Fig. 1, the silicon wafer 0) is set as a p-type semiconductor '(2) is an ultra-thin oxide layer, and (3) is a metal. When the bias voltage is not applied, the structure diagram of the energy band is shown in Fig. 3 (a). Under thermal equilibrium, the energy band is curved. At this time, no current flows, and therefore no light is emitted. When a negative voltage is applied to the metal terminal, ‘this curved band gradually flattens, but before it ’s fully flattened’, the electrons from the metal tunnel still need to pass through some potential barriers, so the current is still small. On the other hand, because the energy band is still bent downwards', there are no accumulated holes near the interface near the silicon oxide layer, so no significant number of electron hole recombination occurs. When the negative voltage at the metal terminal continues to increase until the energy band is completely flattened, the voltage at this time is called the flat band voltage, and the energy level barriers that electrons need to cross from tunneling through the metal also decrease, so the current increases. . When the negative voltage continues to increase, the 'energy band becomes upwardly curved, so the arm and arm coming from the metal tunnel does not need to' cross any energy barrier, and because the band of the oxide layer becomes a triangular cone at the metal end, as shown in Figure 5 (a As shown in the figure, according to the WKB method of quantum mechanics, the tunneling probability is greatly increased, so the current increases sharply (called tuimeling current). Figure 6 shows the current-voltage characteristics of a metal-oxide-silicon light emitting diode under forward bias. This figure shows that the current increases rapidly when the voltage is greater than the flat band voltage. When the energy band changes upward, the valence band is close to the interface of the Shi Ximei layer to form a potential energy well. Therefore, a large number of paper standards have been accumulated for China National Sample (CNS) A4 »( 210X297 mm) (Please read the precautions on the back before filling out this page). Binding, printed by the Central Government Bureau of the Ministry of Economic Affairs, and printed by the cooperative. 4 5 60 5 7 A7. _______B7 Five 'invention description (6) Electric hole, At the same time, a large number of electrons tunneled from the metal end to the interface near the silicon oxide layer, so a considerable number of electron hole recombination occurred. On the other hand, 'Since the silicon crystal is interrupted at the interface of the Shixi oxide layer', the momentum of the electron hole is different from that of the bulk silicon semiconductor, which makes the original situation that does not meet the conservation of momentum, so that the light cannot be changed. Therefore, the electron beam hole recombination can have a higher probability, and under the current increase, it emits considerable light. Figure 7 shows the light intensity-current characteristics of a metal-oxide-silicon light emitting diode under forward bias. The emission spectrum of the electron-emitting composite with the photoluminescence is shown in Fig. 8. This center wavelength corresponds to the band gap energy Eg (Bandgap energy) of the Shi Xi semiconductor. The energy of the band gap will decrease slightly with the temperature. Therefore, when the current is increased, the thermal effect causes the temperature to increase. Therefore, the emission spectrum shown in Figure 8 has a red shift as the current increases. In addition to the light-emitting compound through the electron hole, when the negative voltage at the metal terminal continues to increase, the Fermi level of the metal continues to rise, so it passes through from the metal terminal to arrive; the electrons of δ Xi will not only enter The lowest point of the Shi Xi conductive band can also enter the position of the conductive band with higher energy. In fact, the number of electrons that tunnel into higher conductive bands will be greater than the number of electrons entering the lowest point of the conductive band due to the following two factors: (1) The energy level density of the silicon conductive band increases with increasing energy; (2) As the electrons entering the lowest point of the fragmented conduction < ητ pass through, the energy level barrier they face increases with the negative voltage at the metal end, so their tunneling probability decreases instead. The above two factors result in two results. The first is the decrease in the number of electrons entering the lowest point of the silicon conductive belt. Therefore, the recombination of light through the electron hole is reduced, and even the paper scale is subject to the Chinese National Standard (CNS) A4 specification (210X297). Male thin) (Please read the precautions on the back and then fill in 4 pages) Pack. 1T ―j, 456057 A7 B7 V. Description of the invention (7) Loss ° The second is that although the luminous compoundness through the electron hole is reduced However, the number of electrons passing through the position of the conductive belt increases, and the number of electrons that tb enters the lowest point of the conductive belt increases, so a population inversion is formed between the high-energy conductive belt and the lowest point of the conductive belt. Therefore, the corresponding light can be emitted. Its emission frequency (wavelength) will change with the applied voltage, and it can be from far infrared to near infrared, or even visible light. Therefore, the use of the gold-oxide-silicon structure of the present invention can not only generate light corresponding to the energy gap and energy Eg of silicon semiconductors, but also light in the wavelength range from far infrared to visible light. The above description is only for the metal-oxide-semiconductor light-emitting diodes on P-type semiconductors. For the metal-oxide-semiconductor light-emitting diodes on N-type or undoped semiconductors, the light emission process can be analogized by β. In summary, the present invention is based on a breakthrough The concept of sexual innovation, so that the metal oxide silicon structure used to be limited to the electronic field can also be illuminated in an electrically excited manner, which will have a profound impact on the future silicon semiconductor industry and applications. (_Please read the notes on the back before filling in this education) Packing. Order from the Central Bureau of Standards of the Ministry of Economic Affairs, the printed copy of the Consumer Cooperative Cooperatives-paper I, a copy of the paper, and a copy of the paper.) Ns Ichigo 7 9 2 Members ^-^^ / :: ^ Is there any change in the amendments mentioned on the day of submission? Is it allowed to repair K0-
4 5 6 0 5 7 A7 B7 五、發明说明（8 ) 圖示元件符號說明 (1) : P型矽半導體 (2) :二氧化矽 (3) :金屬（銘） (4) : N型矽半導體4 5 6 0 5 7 A7 B7 V. Description of the invention (8) Symbols of the illustrated components (1): P-type silicon semiconductor (2): Silicon dioxide (3): Metal (name) (4): N-type silicon semiconductor
Ef:費米能階，未加電壓時，金屬和梦半導體相同Ef: Fermi level, when no voltage is applied, metal and dream semiconductor are the same
Ec :矽半導體之導電帶 Εν :矽半導體之價電帶 :金屬之費米能階 :矽半導體之費米能階 (請先閲讀背面之注意事項再填寫本頁) 娌濟部中央搮準局貝工消費合作社印装 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）Ec: Conductive tape of silicon semiconductor Εν: Valence of silicon semiconductor: Fermi level of metal: Fermi level of silicon semiconductor (Please read the precautions on the back before filling this page) The paper size printed by BeiGong Consumer Cooperative is applicable to China National Standard (CNS) A4 (210X297mm)