4529 1 4 A7 B7 五、發明説明（） 發明領A : 本發明有關於半導趙製程，更特別的是關於一種找出 機台特性缺陷的方法。 發明昔景： 最近幾年，可攜式通訊設備及膝上型輕便電腦的發展 已經成為半導體1C設計及科技最主要的驅使力量。高密 度及具高速功能之短通道裝置已成為一種趨勢。因此，一 般而言，一現代積體電路經由包含以自動化或手動方法之 複雜且精準控制的上百個步驟來生產。為生產允收產品， 製造過程應具有内建之品質管制以確保產出符合顧客需 求。品質之達成不僅經由檢驗及篩選監控但亦須經由印證 良好且受控制之製程》 即使如此’某些缺陷或者核團可能不定時產生。製程 過程形成的缺陷將會嚴重地減少超大型積體電路（ULSI) 裝置的產量’因為這些裝置產量會減少並對微粒及雜質污 染更加敏感。通常’缺陷會因為一個或多個製程步驟未能 正確執行而產生。因此，謹慎執行操作機台（system process )是必要的。缺陷通常稱為機台缺陷或是機台特 性缺陷，例如，於晶圓傳送階段，機械手臂操作基枯傳遞 葉片於某位置取得一基材後將其傳送至機台的另_位置， 於基材上經由介於傳遞葉片及基材之間的摩擦將產生缺陷 /微粒·。於數個傳遞過程之後’基材表面上的擦痕會造成 2 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐} {請先閲讀背面之注名事項再填寫i.負) -* 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 452914 A7 ____B7 五、發明説明（） 某種程度累積的錯誤。於傳遞階段基材通常於晶圓製程之 容許範圍内稍作位移，而且並不會立即被檢驗出來。而且， 起因於氧化層成長過程中不平均加熱過程的缺陷與某些太 厚的區域及其引起的異常接觸將造成電路的失效^例如氡 凝結或污染的缺陷亦可能形成。 一個傳統品質控制的方法是藉由檢驗晶圓上的缺陷達 成，該檢驗使用掃描式電子顯微鏡（SEM )或是配合影像 偵測器使用散射光束以接收信號。之後，於一圖形上記錄 缺陷》以一視覺檢查方法比較第一機台處理的晶圖缺陷圖 形與由下一個機台處理的該相同晶圓之缺陷圖形，以發覺 新形成的缺陷。當發現微粒計算數目異常增加時，該機台 視為被不正當操作。然而，在實際狀況下要確定一機台是 否被異常操作而造成機台缺陷是困難的。傳統方法中’僅 於至少處理晶面兩個階段後方取得缺陷圖形以做一比較。 所以，警告訊息將太慢反映狀況予接管下一個機台的負責 人，而造成產量損失。不僅如此，不正確警告訊號的產生 有時會因為顯示於圖形上的缺陷位置會有如上所述的位移 現象而被認為是目前機台產生的新缺陷。因此，/種發現 未適當執行製程步驟並施以一改良製程的方法是扑常重要 的。 發明目的及概述： 揭露一種找出機台特性缺陷的方法。該方法包含：第 一步，讀取第一檔案中所儲存的第一半導體晶圓之缺陷位 3 本紙張尺度適用中國國家揉準（CNS ) Λ4规格（210X297公} ----------0------ti------Μ (請先閱讀背-面之注老事項再填寫才員) "4529 1 4 A7 B7 五、發明説明（） (請先閲讀背.面之注意事項再填寫^負) 置資料及第二樓案中所儲存的第二半導體晶圓之缺陷位置 資料。該缺陷位置包含記錄於檔案上每一個缺陷之一水平 座標及一垂直座標。此半導體晶圓表面上的缺陷是由kla 檢驗系統所檢驗。第一半導體晶固及第二半導想晶圓以至 少一個相同機台進行處理’該機台是一個集合體，包含姓 刻製程、沉積製程、晶圓傳遞製程、微影製程、氧化製程、 氮化製程及金屬化製程等等。於此之後，執行一比較。比 較該第一檔案上每一屬缺陷位置與該第二檔案上每一個私 陷位置，直到所有第一檔案上的缺陷位置已全部比較完 成。同時，缺陷數目及第一檔案及第二檔索間相同缺陷之 缺陷位置皆記錄後’再決定是否缺陷計算數目超出使用者 設定標準《假如是’則發送一訊息予負責人以立即解決該 問題》 岡老ffi簟說明：一 配合附圖參考下列詳細敘述後將對於前述各方面及本 發明許多附加的優點變得更易認同及獲得更好的瞭解’其 中： 第一圖是第一半導體晶圓之缺陷圖形； 第二圖是第二半導體晶圓之缺陷圖形； 經濟部智慧財產局員工消費合作社印製 第三圖是與第二半導體晶圓相同的第一半導艏晶圓缺 陷位置之缺陷圖形；以及 第四圖是本發明之一流程圖。4529 1 4 A7 B7 V. Description of the invention () Invention invention A: The invention relates to the semi-conductor Zhao process, and more particularly to a method for finding defects in machine characteristics. Inventions of the past: In recent years, the development of portable communication equipment and laptop portable computers has become the main driving force for semiconductor 1C design and technology. High-density and high-speed short-channel devices have become a trend. Therefore, in general, a modern integrated circuit is produced through hundreds of steps involving complex and precise control by automated or manual methods. In order to produce acceptable products, the manufacturing process should have built-in quality controls to ensure that output meets customer needs. The quality is achieved not only through inspection and screening monitoring, but also through a proven and controlled process. "Even so, some defects or conglomerates may occur from time to time. Defects formed during the manufacturing process will severely reduce the production of ultra large integrated circuit (ULSI) devices ’because these devices will reduce production and become more sensitive to particulate and foreign matter contamination. Often a 'defect occurs because one or more process steps are not performed correctly. Therefore, careful execution of the system process is necessary. Defects are often referred to as machine defects or machine characteristics defects. For example, during the wafer transfer stage, the robotic arm operates the substrate transfer blade to obtain a substrate at one location and transfer it to another location on the machine. Defects / particles will be generated on the material by friction between the transmission blade and the substrate. After several transfer processes, the scratches on the surface of the substrate will cause 2 paper sizes to apply Chinese National Standard (CNS) A4 specifications (210X297 mm) {Please read the note on the back before filling in i. Negative)- * Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by 452914 A7 ____B7 5. Description of the invention () Accumulated errors to some extent. During the transfer stage, the substrate is usually slightly shifted within the allowable range of the wafer process, and it is not immediately detected. In addition, defects due to uneven heating during the growth of the oxide layer and certain too thick areas and abnormal contact caused by them will cause circuit failure ^ Defects such as condensation or pollution may also be formed. A traditional method of quality control is achieved by inspecting defects on the wafer. The inspection uses a scanning electron microscope (SEM) or a scatter beam in conjunction with an image detector to receive signals. Then, Defects are recorded on a pattern. "A visual inspection method is used to compare the defect pattern of the crystal pattern processed by the first machine with the defect pattern of the same wafer processed by the next machine to detect newly formed defects. When an abnormal increase in the number of particles is found, the machine is deemed to be operating improperly. However, it is difficult to determine whether a machine has been operated abnormally and caused machine defects under actual conditions. In the traditional method, a defect pattern is obtained only after at least two stages of the crystal plane are processed for comparison. Therefore, the warning message will reflect the situation too slowly to the person in charge of taking over the next machine, resulting in a loss of production. Not only that, the generation of an incorrect warning signal is sometimes considered to be a new defect generated by the current machine because the position of the defect displayed on the figure will be shifted as described above. Therefore, it is often important to find that the process steps are not performed properly and to implement an improved process. Object and Summary of the Invention: A method for finding defects in machine characteristics is disclosed. The method includes: the first step is to read the defect position of the first semiconductor wafer stored in the first file 3 paper size applicable to the Chinese National Standard (CNS) Λ4 specification (210X297)} ------- --- 0 ------ ti ------ Μ (please read the back-to-note notes before filling in the staff) " 4529 1 4 A7 B7 V. Description of the invention () (please first Read the precautions on the back and then fill in the negative information) and the defect position information of the second semiconductor wafer stored in the second floor case. The defect position contains one horizontal coordinate and one defect position of each defect recorded on the file. Vertical coordinates. Defects on the surface of this semiconductor wafer are inspected by the KLA inspection system. The first semiconductor wafer and the second semiconductor wafer are processed with at least one identical machine. The machine is an assembly containing Carving process, deposition process, wafer transfer process, lithography process, oxidation process, nitridation process, metallization process, etc. After that, a comparison is performed. Compare each defect location on the first file with the Every private location on the second file, until all the The positions of the traps have all been compared. At the same time, the number of defects and the positions of the same defects between the first file and the second file are recorded. Responsible person will immediately solve the problem. ”Okayama explained: After referring to the following detailed description in conjunction with the drawings, it will be easier to identify and gain a better understanding of the foregoing aspects and many additional advantages of the present invention. Among them: first The figure shows the defect pattern of the first semiconductor wafer. The second figure shows the defect pattern of the second semiconductor wafer. The third figure printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is the same as the second semiconductor wafer.缺陷 A defect pattern of a wafer defect position; and the fourth figure is a flowchart of the present invention.
本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部智慧財產局員工消費合作社印製 d529 1 4. A? ____B7 五、發明説明（） 發明详to說明： 如前述之發明背景’目前從檢查缺陷圖形所提供的資 訊中實際發現機台異常狀態的方法是不太容易的^主要理 由是目前的方法需要比較兩張或是更多同一晶圓的缺陷圊 形，該晶圓處理於不同階段而且計算缺陷數目增加。然而， 於某種情況下會存在一些困擾，例如顯示於圖形上缺陷的 局部位置於某種緣故下在一個甚至更多機台中會位移。此 外’於現階段形成或者於一個或數個階段前造成的缺陷亦 很難區分’因為目前的方法通常於該晶圓已經歷數個機台 之後方確定顯示於圖形上形成之缺陷。因此，一些重要訊 息已經遺失’結果造成欲藉由立即獲取錯誤訊息以減少產 量損失是困難。 為改進先前問題，揭露一個發現系統微粒的嶄新方 法。於本方法中’使用KLA缺陷檢驗系統。光束择插晶 圓表面上的每一個小區塊至全部晶圓並且擷取由一列感光 偶合元件（C CD )条、應之影像，再將其數位轉換為彩色圖 案訊號後儲存於記憶體。該儲存於記億體之像素影像若經 由KL A檢驗系統檢查晶圓的每一個圖案後該缺陷或微粒 並未重複存在’將視為一缺陷或一微粒，並將該缺陷記錄 於缺陷圖形。一般而言，於本實施中，於KLA檢驗系統 記錄中偵測出來的缺陷大小超過〇. 2 // m。 第一圖顯示由KL A檢驗系統偵查發現的缺陷並記錄 資料於缺陷圖形’該資料包含他們個別之水平座標及垂直 座標，因此該資料容易以一記錄檔案儲存於個人電腦記錄 5 本紙it尺度適用中國國家捸準（CNS ) Λ4規格（210X297公羹） ---------粜------—、1:-------餚 (請先閲讀背面之注意事項再填寫I ) A7 B7 452914 五、發明説明（） 媒體。較佳實施例中1記錄於稱為一參考檔案之檔案中的 缺陷，代表該晶圓於第一測試條件下處理（例如，假如目 前機台於正常狀況運轉下執行測試）。第一圖顯示第一晶 圓缺陷圖形之範例。第二晶圓隨後由相同機台處理並檢 驗。以相同的檢驗方法（例如以ICLA檢驗系統）記錄第 二晶圓缺陷圖形之資料，稱為檢驗檔案或測試檔案。第二 圖顯不第二晶圓缺陷圈形之範例。以目前的方法，假如第 二晶圓已經歷與第一晶圓相同機台的情沉歷史是不需要 的。然而，第一晶圓與第二晶圓經歷相同最後機台是較佳 的。本方法最佳敘述於下述第四圖之流程圖。 於步驟210，於測試襠案中讀到第一缺陷位置並設定 n=l。此後，步驟220執行從參考檔案讀取第一缺陷位置 並設定γ=Ι·>做一決定條件230以決定是否於測試檔案中 讀到該讀取缺陷位置與參考檔案之讀取缺陷是位於相同位 置。須注意的是假如於測試檔案中第nth讀取缺陷具有與 參考檔案中第rth讀取缺陷相同的位置，就代表第讀取 缺陷位置是位於第rtb讀取缺陷位置的一特定半徑範圍之 内’該特定半徑範圍設定是根據使用者的標準。。假如步 驟230的結果是真的，則該缺陷位置記錄於稱為„SaME” (區塊235 )的檔案，之後做成一決定步驟25〇β當步规 230的結果是錯的’則做成步驟240。步綠24〇決定參考 檔案中該缺陷數目"r"是否為最終缺陷數 ^ a 取·日，假如是，做 成另一個判斷250。假如步驟240結果是扭& _ 〜罐的，讀取參考 ’並且自步驟220 本紙張尺度適用中國國家樣準（CNS )八4規格（210x297公楚） I 睾---1---t------銘 (諳先閱讀背面之注意事項再填寫方，頁〕 經濟部智慧財產局員工消費合作社印製 檔案中下一個缺陷位置（亦即r = r+l ) 經濟部智慧財產局員工消費合作社印製 462914 A7 B7五、發明説明（） 重複執行。步驟250是用來決定該缺陷數目”η"是否為測 試擋案中之最終缺陷，假如是，做成第六判斷260。若步 驟2 5 0結果是錯的，讀取測試檔案卞下一個缺陷（亦即 η = η+1)並且自步驟210重複執行=最終判斷（第六步騾） 260是用來決定檔案”SAME"步驟235中之缺陷計算數目 符合警告標準。第三圖顯示檔案” SAME”之缺陷圖形範例= 若缺陷計算數目超過負責人設定之標準，則立即執行發送 一訊息予負責人。須注意的是該設定的警告標準係根據機 台而定。其他半導體製造過程決定於它們系统需求所以不 詳細敎述a 本發明之優點為： (1)因為目前的方法計算擋案” SAME”中相同位置的 數目，但忽略任何額外的缺陷數目。所以，該 計算數目僅代表目前機台的特性。沒有意外產 生的缺陷是被關心的。因此，異常機台將可輕 易發現； (2 )藉由使用KLA檢驗系統及個人電腦可輕易達成 測試過程，而節省發現異常機台的時間； 〔3)本方法除了一等待發現相同缺陷微粒之機台 外，並不限於那些介於參考晶圓及測試晶圓間 已經歷相同先前製程歷史，因此可立即發現異 常機台。換言之，改進產能。 (4 )與傳統方法比較，減少機台特性缺陷之錯誤判 斷。 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 452914 A7 B7 五、發明说明（ 如同熟知本項技藝者之瞭解，前述本發明之 例為本發明之一敘述而非為一限制。 較佳實掩 1甲清專利範圍之箱 神與範圍内欲包含不同的修改與相似的 ^ 1 w的女排，該範圍將給 予最寬廣之解釋以包括所有的修改與相似結構。 因已經描述本發明之較佳實施例，於未脫離本發明之 精神及範圍内可做不同的修改。 5^1:# (請先鬩讀背面之注？^項再填寫i.頁) 經濟部智慧財產局員工消費合作社印製 8 本紙蒗尺度適用中國國家揉準（CMS ) A4規格（210X297公釐）This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs d529 1 4. A? ____B7 V. Description of the invention () Detailed description of the invention: As stated in the aforementioned background 'At present, the method of actually discovering the abnormal state of the machine from the information provided by the defect pattern is not easy. The main reason is that the current method requires the comparison of two or more defects on the same wafer. Processed at different stages and the number of calculated defects increased. However, in some cases, there will be some problems, such as the local position of the defect displayed on the figure being shifted in one or more machines for some reason. In addition, the defects formed at the current stage or caused before one or more stages are difficult to distinguish, because the current method usually determines the defects formed on the pattern after the wafer has gone through several machines. Therefore, some important information has been lost. 'As a result, it is difficult to reduce the loss of production by obtaining the wrong information immediately. In order to improve the previous problem, a new method of discovering system particles was revealed. In this method 'a KLA defect inspection system is used. The light beam inserts each small block on the circular surface to all the wafers and captures an image from a row of photosensitive coupling element (C CD) strips, and then digitally converts it into a color pattern signal and stores it in the memory. If the pixel image stored in the memory body is inspected by the KL A inspection system for each pattern of the wafer, the defect or particle does not exist repeatedly 'will be regarded as a defect or a particle, and the defect will be recorded in the defect pattern. Generally speaking, in this implementation, the size of the defects detected in the KLA inspection system records exceeds 0.2 // m. The first picture shows the defects detected by the KL A inspection system and records the data in the defect graph. The data contains their individual horizontal and vertical coordinates, so the data can be easily stored in a personal computer in a log file. China National Standards (CNS) Λ4 specification (210X297) 羹 --------- 粜 ----------, 1: ------- Dish (Please read the notes on the back first Then fill in I) A7 B7 452914 V. Description of Invention () Media. Defects recorded in a file referred to as a reference file in the preferred embodiment represent that the wafer is processed under the first test condition (for example, if the machine is currently performing tests under normal conditions). The first figure shows an example of a first wafer defect pattern. The second wafer is then processed and inspected by the same machine. Recording the data of the second wafer defect pattern by the same inspection method (for example, ICLA inspection system) is called inspection file or test file. The second figure shows an example of a second wafer defect circle. With the current method, it is unnecessary if the second wafer has experienced the same history as the first wafer. However, it is preferable that the first wafer and the second wafer undergo the same final machine. This method is best described in the flowchart of the fourth figure below. In step 210, the first defect position is read in the test crotch case and n = 1 is set. Thereafter, step 220 is executed to read the first defect position from the reference file and set γ = 1 to make a decision condition 230 to determine whether the read defect position and the read defect of the reference file are located in the test file. Same location. It should be noted that if the nth read defect in the test file has the same position as the rth read defect in the reference file, it means that the read defect position is within a specific radius of the rtb read defect position. 'The specific radius setting is based on user criteria. . If the result of step 230 is true, the location of the defect is recorded in a file called “SaME” (block 235), and then a decision step 25〇β is made. When the result of step 230 is wrong, then it is made Step 240. Step Green 24 decides whether the number of defects " r " in the reference file is the final number of defects ^ a fetches · days, and if so, makes another judgement 250. If the result of step 240 is twisted & _ ~ can, read the reference 'and since step 220 this paper size is applicable to China National Standard (CNS) 8 4 specifications (210x297). I testis --- 1 --- t ------ Ming (谙 Please read the precautions on the back before filling in, page] The next defective position in the printed file of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (ie r = r + l) Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau ’s Consumer Cooperatives 462914 A7 B7 V. Description of the invention () Repeated execution. Step 250 is used to determine whether the number of defects "η" is the final defect in the test case. If so, a sixth judgment 260 is made. If the result of step 2 50 is wrong, read the test file 卞 the next defect (ie η = η + 1) and repeat from step 210 = final judgment (step 6) 260 is used to determine the file "SAME " The number of defect calculations in step 235 meets the warning standard. The third figure shows an example of the defect graphic of the file "SAME" = if the number of defect calculations exceeds the standard set by the person in charge, immediately send a message to the person in charge. Please note that The set alarm The reporting standard is based on the machine. Other semiconductor manufacturing processes are determined by their system requirements, so they are not described in detail. A. The advantages of the present invention are: (1) Because the current method calculates the number of identical positions in the file "SAME", but Ignore any additional number of defects. Therefore, the calculated number only represents the characteristics of the current machine. No accidental defects are concerned. Therefore, abnormal machines can be easily found; (2) by using the KLA inspection system and The personal computer can easily achieve the test process and save the time to find the abnormal machine; (3) This method is not limited to those that have passed between the reference wafer and the test wafer, except for a machine waiting to find the same defective particles. Same previous process history, so abnormal machines can be found immediately. In other words, improve productivity. (4) Compared with the traditional method, the error judgment of machine characteristic defects is reduced. (Please read the precautions on the back before filling this page) This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 452914 A7 B7 V. Description of the invention (as understood by those skilled in the art, the aforementioned invention The example is a description of the present invention rather than a limitation. It is better to cover the box gods of the scope of Jiaqing patent and the women's volleyball team that wants to include different modifications and similar ^ 1 w within the scope, the scope will be given the broadest It is explained to include all modifications and similar structures. Since the preferred embodiment of the present invention has been described, different modifications can be made without departing from the spirit and scope of the present invention. 5 ^ 1: # (Please read the note on the back first ? ^, Then fill in i. Page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 8 The size of this paper is applicable to China National Standards (CMS) A4 (210X297 mm)