45286 2 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（1 ) 發明背景 發明領域 本發明係關於進行基板處理之半導體製造裝置，使用 該半導體製造裝置之基板處理方法及半導體裝置之製造方 法。 本發明特別是關於在基板表面進行蝕刻處理之半導體 製造裝置，使用該半導體製造裝置之基板之蝕刻處理方法 *裝置內部之淸理方法及半導體裝置之製造方法。 習知技術之說明 於半導體裝置之製造中*乾蝕刻、CVD ( Chemical Vapor Deposition :化學氣相沈積）處理、乾淸理處理等之 各式各樣之處理係在半導體晶圓上進行，這些處理主要在 真空室內部進行。 例如，乾蝕刻處理於圖8所示之乾蝕刻裝置1 0 0中 進行。乾蝕刻裝置1 0 0係具備：真空室（真空容器或腔 )101;及進行真空室101內部之排氣之排氣系 1 0 2 ;及對真空室1 0 1內部供給蝕刻氣體之氣體導入 口 i 0 3 ;及使真空室1 0 1內部之壓力維持在一定之壓 力計104 ;及觀察真空室101內部用之石英窗105 :及載置半導體晶圓1 1 0，而且供給規定電源之電極 10 6。 真空室1 0 1例如係藉由鋁合金形成，被電氣地接地 (被接地）。高頻電源107被連接於電極106。在石 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------波·------ 訂---------線 (請先閱讀背面之注意事項再填寫本頁) -4- 4 5286 2 A7 B7 經濟部智慧財產局員工消費合作社印制衣 五、發明說明（？) 英窗1 0 5之外配置分光器1 0 8及光傳感器1 0 9，可 以檢視真空室1 0 1內部之發光。壓力計1 0 4量測真空 室1 0 1內部之壓力，此壓力計1 0 4例如使用膜片型真 空計（電容壓力計：CM)。 利用圖8所示之乾蝕刻裝置1 0 0之乾蝕刻如下述般 地進行。 (1 )首先，藉由未圖示出之真空排氣裝置（真空排 氣泵），通過排氣系102將真空室101內部充分排氣 ^真空室1 0 1內部以比進行蝕刻處理時之壓力還低1位 數以上之壓力爲適當。將半導體晶圓110搬入真空室 1 0 1內部，在電極1 0 6上載置半導體晶圓1 1 0。 (2 ) —邊將真空室1 0 1內部排氣，一邊通過氣體 導入口 1 0 3對真空室1 0 1內部供給適當之氣體。此時 ，使真空室1 0 1內部成爲一定壓力地，使用配置在真空 室101之壓力調整閥111，調節排氣之電導。 (3 ) —由高頻電源1 0 7對電極1 0 6供給適當之 高頻電力，於真空室1 0 1內部產生電漿，產生適當活性 種或離子。藉由此活性種或離子，半導體晶圓1 10之表 面或表面上之薄膜被蝕刻。 (4 )於此蝕刻中，例如在監視電漿中之特定元素之 發光下，可以進行終點之檢測。例如，以氯（C 1 2 )氣體 進行多結晶砂膜poly silicon film之乾數刻之情形，藉由監 視S i C 1之發光（波長4 0 5 n m )，可以檢測蝕刻終 點。於蝕刻終點時，氯（c 1 )與矽（S i )之反應生成 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝 -----ί 訂 - -------線- -5- 4528〇 ^ Λ7 B7 經濟部智慧財產局負工消費合作社印製 五、發明說明p ) 物之S i C 1量於電漿中大幅減少之故，可以將發光量顯 著減少之時間點當成蝕刻終點。監視波長之設定並無特別 限制，以經驗決定之。又，分光之半値寬也不限定於取出 特定之線光譜。 於上述乾蝕刻裝置1 0 0中，未顧慮到以下數點。 (1 )被設置在乾蝕刻裝置1 〇 0之真空室1 〇 1之 壓力計1 0 4爲了經常保持真空室1 〇 1內部之壓力爲一 定之故，量測壓力。真空室1 〇 1內部之壓力經常被保持 一定之故’可以實現安定乾蝕刻處理。但是，如連續處理 多量之半導體晶圓1Ί 0，藉由蝕刻產生之反應生成物， 特別是蒸汽壓低之反應生成物無法通過排氣系1 〇 2被排 氣，被堆積在真空室1 0 1之內壁。反應生成物也被堆積 在石英窗1 0 5，隨著繼續蝕刻處理，對於監視之波長（ 此情形爲4 0 5 nm之波長）之石英窗1 〇 5之透明度下 降，蝕刻終點之檢測變困難。又，在反應生成物之堆積量 多之情形，完成無法進行蝕刻終點之檢測。即，乾蝕刻處 理之蝕刻量之控制變得非常困難。再者，於乾蝕刻處理中 ，使加工精度降低，乾蝕刻裝置1 〇 〇本身之加工精度也 降低。 (2 )爲了防止此種加工精度之降低於未然，實施淸 理處理。淸理處理爲：使真空室101開放於大氣，去除 附著於真空室1 0 1之內壁以及石英窗1 0 5之表面之反 應生成物之處理。然而，在淸理處理後進行乾蝕刻處理， 有必要再度將真空室1 0 1之內部進行抽真空。再度至開 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 】 ^ 44^--------^ < I -----I |*^ (請先閱讀背面之主意事項再填寫本頁) -6- 經濟部智慧財產局員工消費合作社印製 45286 2 A7 B7 五、發明說明（4 ) 始乾餓刻處理爲止，至少需要3小時之程度，在比較長之 情形，有至一晝夜者，乾蝕刻裝置1 0 0之稼動效率降低 0 (3 )通常 > 在淸理處理係使用被稱爲乾淸理處理之 以下的處理方法。即與進行乾蝕刻處理之情形相同地，使 真空室1 0 1內部充分真空排氣，對此真空室1 0 1內部 供給有別於蝕刻處理之適當的淸理氣體，以保持一定之壓 力，對電極6施加高頻電力，使淸理氣體成爲電漿狀態， 去除附著在真空室1 0 1內部或石英窗1 0 5之表面之反 應生成物之方法。與蝕刻處理同樣地進行發光之分光，通 過石英窗1 0 5將真空室1 0 1內部之發光強度之監視充 分回復之時間點，或由附著在真空室1 0 1之內壁或石英 窗1 0 5之表面之反應生成物來之特定之線光譜充分減少 之時間點設成淸理處理之終點，進行該檢測。然而，此種 之乾淸理處理，在淸理效果有偏，只以發光強度之監視， 可以正確淸理處理之終點檢測。因此|幾次重複進行乾淸 理處理後，有必要併用使真空室1 0 1內部成爲開放大氣 狀態進行之溼蝕刻處理。溼蝕刻處理不單去除石英窗 1 0 5之雲霧，也可以去除由於厚厚被堆積之內部應力，-剝落於真空室1 0 1內部之反應生成物。此剝落之反應生 成物於乾蝕刻裝置1 0 0之乾蝕刻處理中，成爲降低生產 量之粒子之產生原因。因此，反應生成物有必要在剝落之 前，藉由溼蝕刻處理以去除之。 (4)近年來，在乾蝕刻裝置100或電漿CVD裝 本紙張尺度適用令國國家標準（CNS)A4規格<210 X 297公釐> I i -------—訂---—IIIH I (請先間讀背面之注意事項再填寫本頁) 經濟部智慧財產局負工消費合作社印製 4 5286 ^ A7 B7 五、發明說明户) 置被使用之壓力爲〇·1Pa〜i〇Pa程度。再現性良 好地可以檢測此範圍之壓力之真空計有電容真空計。此電 容真空計爲：使電容器電極之一面露出於被量測側’藉由 被量測側之壓力’此電容器電極變形’電容器電容（電荷 )變化，藉由使此變化量轉換爲壓力之變化’可以量測壓 力。電容真空計可以直接量測氣體氣氛之壓力之故，有壓 力之量測精度高之特徵。但是’半導體製造裝置或電漿 CVD裝置在處理時係使用電漿之故，活性原子或活性分 子被大童產生，這些會堆積在電容真空計之電容器電極表 面之故，量測値之信賴性降低。 (5)再者，高精度量測0.IPa〜l〇Pa之壓 力之電容真空計具備敏感（高感度之）傳感器部，此種傳 感器部之暴露可能壓力之界限頂多爲1 0 0 0 p a程度。 在使真空室1 0 1內部開放於大氣之情形，有必要隔離傳 感器部，將傳感器部保持在高真空中。但是，由於一點點 之洩漏所導致之昇壓，也會影響到傳感器部之量測精度之 故，使真空室1 0 1內部充分排氣，至量測壓力安定爲止 ，需要相當之時間。 發明滴要 本發明係爲了解決上述課題而完成者。 因此，本發明之目的在於提供：可以提升蝕刻處理、 淸理處理等之處理精度之半導體製造裝置，基板處理方法 及半導體裝置之製造方法》特別是本發明之目的在於提供 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I. -----袭---一！| 訂·!----線 (請先閱讀背面之注意事項再填寫本頁) -8 - 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（？) :可以提升蝕刻處理之終點檢測精度之半導體製造裝置， 基板處理方法及半導體裝置之製造方法。 再者，本發明之目的在於提供：可以提升稼動效率之 半導體製造裝置，基板處理方法及半導體裝置之製造方法 。特別是本發明之目的在於提供：可以縮短淸理處理時間 ，提升處理全體之稼動效率之半導體製造裝置，基板處理 方法及半導體裝置之製造方法。又，特別是本發明之目的 在於提供：可以縮短置量測處理室內部之狀態爲止所需要 之時間，提升處理全體之稼動效率之半導體製造裝置，基 板處理方法及半導體裝置之製造方法。 再者，本發明之目的在於提供：可以提升製造上之產 出率之半導體製造裝;置，基板處理方法及半導體裝置之製 造方法。 爲了解決上述課題，本發明之第1特徵係包含以下之 半導體製造裝置： 在內部可以載置處理基板之處理室； 及對處理室內部供給處理氣體之處理氣體供給部； 及檢測處理室內部之處理氣體之比熱之比熱檢測部。 此處，比熱檢測部細胞含皮拉尼真空計。再者，可以 實用地使用具有1秒以下之響應速度之皮拉尼真空計。比 熱檢測部最好至少具備：皮拉尼真空計，及將以此皮拉尼 真空計被檢測出之比熱轉換爲電氣信號之量測電路。量測 電路可以實用上使用惠斯登電橋電路。 處理氣體供給部提供：蝕刻處理基板之表面之蝕刻氣 本纸張尺度適用_國囤家標準（CNS)A4規格（210 X 297公釐〉 (讀先閱讀背面之注意事項再填寫本頁) -裝！--ί 訂--- ---II ·線· -9- 4 5286 經濟部智慧財產局具工消費合作社印製 A7 B7 五、發明說明（7 ) 體，或淸理處理室之內壁之淸理氣體。 再者，本發明之第1特徵之半導體製造裝置最好實用 上具備： 被配置於處理室內部，載置處理基板之高頻電極： 及被連接於高頻電極之高頻電源； 及被連接於處理室內部之真空排氣裝置。 處理基板可以使用：半導體基板、玻璃基板、配線基 板、金屬基板、絕緣基板、樹脂基板等，半導體製造裝置 可以進行這些基板之處理。 此種本發明之第1特徵之半導體製造裝置中，具備比 熱檢測部以檢測處理室內部之處理氣體之比熱之故，可以 簡便、迅速而且正確地檢測處理氣體之比熱，可以提升處 理精度。再者，比熱檢測部構造簡易之故，可以簡易實現 可以提升處理精度之半導體製造裝置。 本發明之第2特徵係包含以下之半導體製造裝置： 可以在內部載置處理基板之處理室； 及對處理室內部供給處理氣體之處理氣體供給部； 及被連接於處理室內部之真空排氣裝置： 及檢測處理室內部之處理氣體之比熱之比熱檢測部； 及檢測處理室內部之壓力之壓力檢測部。 此處，比熱檢測部最好係包含具有1秒以下之響應速 度之皮拉尼真空計。壓力檢測部可以實用地使用電容真空 計。 此種本發明之第2特徵之半導體製造裝置中，除了藉 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---7-----------------------I--^ I (請先閱讀背面之沒意事項再填寫本頁) -10- 45286 經濟部智慧財產局員工消f合作社印製 A7 B7 五、發明說明（6 ) 由本發明之第1特徵之半導體製造裝置可以獲得之效果外 ，由於同時具備測定對象物物理上不同之比熱檢測部及壓 力檢測部之故，壓力量測可以更簡易、迅速而且正確地進 行。 本發明之第3特徵爲包含以下工程之基板處理方法： (a )在處理室內部配置處理基板之工程； (b )對處理室內部供給處理氣體之工程： (c )於處理室內部藉由處理氣體，對處理基板進行 規定處理之工程： (d )量測處理室內部之處理氣體之比熱，藉由該比 熱之變化控制對處理基板進行規定之處理之工程； 此處，最好工程（b )係供給蝕刻氣體之工程，工程 (c)係藉由蝕刻氣體對處理基板進行蝕刻處理之工程。 再者，工程（d )最好爲：量測蝕刻處理前對處理室內部 供給之蝕刻氣體之處理前比熱，及蝕刻處理中之處理室內 部之蝕刻氣體之處理中比熱，在處理中比熱向處理前比熱 變化之階段，進行使蝕刻處理停止之控制之工程。而且， 工程（d )之處理氣體之比熱係藉由皮拉尼真空計，更理 想爲具有1秒以下之響應速度之皮拉尼真空計量測之。 此種本發明之第3特徵之基板處理方法中，在檢測處 理室內部之處理氣體之比熱變化之階段，使處理停止之故 ，可以進行簡易、迅速而且正確之處理。特別是可以進行 簡易、迅速而且正確之蝕刻處理。 本發明之第4特徵係於本發明之第3特徵之基板處理 本紙張尺度適用中國固家標準（CNS)A4規格（210 X 297公釐） ---；----T----I--裝-----ί— 訂---------線- (請先閱讀背面之注意事項再填寫本頁) -11 - 45^8 6, A7 B7 五、發明說明（9 ) 方法中更具備以下之工程之基板處理方法。 (e )對處理室內部供給淸理氣體之工程； (f)於處理室內部藉由淸理氣體對處理室內壁進行 淸理處理之工程； (g )量測處理室內部之淸理氣體之比熱•藉由此比 熱之變化，控制淸理處理之工程。 +此處，工程（g )係量測淸理處理前被供給於處理室 內部之淸理氣體之處理前比熱，及淸理處理中之處理室內 部之淸理氣體之處理中比熱，處理中比熱在向處理前比熱 變化之階段，進行使淸理處理停止之控制之工程。再者， 工程（g )最好係量測淸理氣體之電漿狀態之比熱，控制 淸理處理之工程。 此種本發明之第4特徵之基扳處理方法中，在檢測處 理室內部之淸理氣體之比熱變化之階段，使處理停止之故 ，可以進行簡易、迅速而且正確之淸理處理。 本發明之第5特徵爲包含以下工程之基板處理方法。 (a )在處理室內部配置處理基板之工程； (b)於處理室內部供給由至少1種之氣體形成之處 理氣體之工程； (c )於處理室內部，藉由處理氣體對處理基板進行 規定處理之工程； (d )量測處理室內部之處理氣體之比熱，藉由該比 熱之變化，控制對處理基板進行之規定處理之工程： (e )量測處理室內部之處理氣體之壓力，藉由此壓 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------線. 經濟部智慧財產局員工消費合作社印製 -12- ^286, ^286, 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（10 ) 力之變化，控制對處理基板進行之規定處理之工程》 此處，最好工程（d )之處理氣體之比熱係藉由具有 1秒以下之響應速度之皮拉尼真空計被量測，工程（e ) 之處理氣體之壓力係藉由膜片型真空計被量測。 此種本發明之第5特徵之基板處理方法中，在本發明 之第3特徵之基板處理方法之外，進行處理氣體之比熱之 量測及測定對象物物理上不同之壓力之量測，依據雙方之 量測進行規定處理之故，可以更簡易、迅速而且正確地進 行規定處理。 本發明之第6特徵係包含以下工程之半導體裝置之製 造方法。 (a )在處理室內部配置半導體晶圓之工程； (b)對處理室內部供給處理氣體之工程： (c )於處理室內部藉由處理氣體對半導體晶圓進行 規定處理之工程： (d )量測處理室內部之處理氣體之比熱，藉由該比 熱之變化，控制對處理基板所進行之規定處理之工程。 此種本發明之第6特徵之半導體裝置之製造方法中， 可以獲得與本發明之第3特徵之基板處理方法同等之效果 合適實施形態之說明 以下，參考圖面說明本發明之實施形態。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） .----------表------— —訂!1!線 (請先閱讀背面之注意事項再填寫本頁) -13- 5^8β A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明) 第1實施形態 【比熱檢測部之構成及動作原理】 首先’說明本發明之第1實施形態之半導體製造裝置 之比熱檢測部之構成及動作原理。又，本發明之第2實施 形態之半導體製造裝置之比熱檢測部之構成及動作原理與 此發明之第1實施形態之比熱檢測部之構成及動作原理相 同a 如圖2所示般地，本發明之第1實施形態之比熱檢測 部1 0係具備高速響應之皮拉尼真空計1 Ο Ρ。皮拉尼真 空計1 Ο Ρ於收容容器1 1之內部，由此收容容器1 1之 壁1 3起留有距離，在收容容器1 1之中心部份具備鎢絲 1 2。此鎢絲1 2係皮拉尼真空計1 Ο Ρ之主要構成元件 。收容容器1 1之一端被開放於進行半導體製造裝置（1 )之比熱之量測之處理室（2 )內部。鎢絲1 2之上側之 一端被連接於被配置在收容容器1 1之上側之端子1 4， 鎢絲12之下側之另一端被連接於被配置在收容容器11 之下側之端子1 5。這些端子1 4及1 5被當成電極端子 使用之同時，也被當成鎢絲1 2之支持體使用。皮拉尼真 空計1 Ο Ρ之端子1 4及1 5透過量測電路1 0 C被連接 於直流電源10D及開關元件10S =量測電路10C於 本發明之第1實施形態中，係以惠斯登電橋Wheatstone bndge電路構成，可以將鎢絲1 2之熱變化當成電流變化加 以檢測。 皮拉尼真空計1 0 P之動作原理如下。氣體分子與被 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------^ i ---1--^---------^ <請先閱讀背面之泛意事項再填寫本頁) -14 - 6 Λ7 Β7 五、發明說明（12 ) 加熱至某溫度之鎢絲1 2衝突時，由鎢絲1 2被奪走熱。 又，被加熱之氣體分子與收容容器1 1之壁1 3衝突’熱 被壁1 3奪走。透過氣體分子，鎢絲1 2失掉之熱量Q比 例於與鎢絲1 2衝突之氣體分子之數目’即壓力P。將熱 變化當成壓力變化量測之量測計爲皮拉尼真空計1 〇p ° 鎢絲1 2失掉之熱量<3也依存於氣體分子之比熱。 此處，設：衝突前之氣體分子1 6之溫度爲Tg (與 壁13之溫度等價）、衝突後之氣體分子17之溫度爲 T f (與鎢絲1 2之溫度等價）、氣體分子之分子量爲Μ 、熱適應係數爲α、氣體之定壓比熱爲C ρ、氣體之定積 比熱爲C ν，鎢絲1 2失掉之熱量Q可以以下式< 1 >表 示之。 Q=a {(T +l)/(r -l)}M'W2(Tf-Tg)P <1> 但是，r = cp/Cv。 藉由即使壓力p變化，衝突後之氣體分子1 7之溫度 T f也不會變化地，使用童測電路（惠斯登電橋電路） 1 0 C加以控制，鎢絲1 2失掉之熱量Q，即被供給於鎢 絲1 2之電力爲比例於P，壓力之量測變成可能。 由上述< 1 >可以明白地，一般氣體種類不同，量測 之數値也隨著變化。又，在數種之混合氣體之情形，數値 之變化更爲複雜。因此，皮拉尼真空計1 Ο Ρ無法量測絕 對壓力，藉由皮拉尼真空計1 ο Ρ量測者爲氣體之比熱》 本紙張尺度適用t國國家標準（CNS)A4規格（210x 297公釐） (請先閱讀背面之注意事項再填寫本頁} --裝·-------訂---------線. 經濟部智慧財產局員工消費合作社印製 -15- 咖2 A. ___ _ B7 五、發明說明（13 ) 例如，於乾蝕刻處理中，如考慮到蝕刻之終點前後，藉由 終點前後之蝕刻反應所產生之反應生成物之成分或反應生 成物之成分比變化，處理室內部之混合氣體全體之比熱也 變化，皮拉尼真空計1 0 P檢測此比熱之變化。 本發明之第1實施形態之皮拉尼真空計1 〇 P係實用 上可以使用響應速度高，最好具有1秒以下之響應速度者 。例如’ 7少A 7夕公司製之高精度皮拉尼真空計等可以 適用於本發明。此種高精度之皮拉尼真空計係改良因控制 系統之信號處理或熱絕緣等之外來雜訊之響應性，實現1 秒以下之響應速度。又，此種高精度皮拉尼真空計在量測 範圍也擴大爲0 . 133Pa〜133000Pa ( 0.001〜1000 torr)之廣範圍。 於1 0秒程度之響應速度慢之皮拉尼真空計中，例如 ，即使使用於蝕刻終點等之檢測，無法檢測正確之終點時 刻。又，此種響應速度慢之皮拉尼真空計通常具有1 3 3 P a〜6 6 5 0 0 P a之窄量測範圍，特別是真空度高之 範圍例如0 . 1 3 3 P a程度之低壓中，無法獲得高精度 之量測値，未被使用於此種範圍之壓力量測。 如上述般地，本發明之第1實施形態之皮拉尼真空計 1 0 P量測處理室內部之氣體氣氛之比熱，依據此量測値 可以知道處理室內部之壓力。相對於此，通常被使用之電 容真空計原理上爲量測壓力本身*原理上與皮拉尼真空計 不同。 又，如比較被供給於處理室內部之瞬間後之氣體氣氛 本紙張尺度適用中0囷家標準（CNS)A4規格（210 X 297公笼） (請先閱讀背面之;i意事項再填寫本頁) ''装--------訂---------線— 經濟部智慧財產局員工消费合作社印製 -16- A7 B7 五、發明說明（14 ) 與處理前之電漿狀態之氣體氣氛，藉由電漿化，氣體分子 β分解被促進之故，氣體氣氛之實際壓力在電漿產生前後 變化。以皮拉尼真空計、電容真空計分別量測此壓力變化 ’量測之物理量不同之故，各別之量測計之量測値也必定 不一致。 【半導體製造裝置之構成】 接著，說明本發明之第1實施形態之半導體製造裝置 〇 圖1所示半導體製造裝置1係在當成處理基板之半導 體晶圓8進行乾蝕刻處理之乾蝕刻處理裝置此半導體製 造裝置1係由具備：在內不可以載置作爲處理基板之半導 體晶圓8之處理室2;及對處理室2內部供給處理氣體之 處理氣體供給部3:及被連接於處理室2內部之真空排氣 裝置4;及檢測處理室2內部之處理氣體之比熱之比熱檢 測部（第1量測計）10;及檢測處理室2內部之壓力之 壓力檢測部（第2量測計）2 0所構築而成。 處理室2係可以使其內部成爲高真空之真空容器（腔 )’例如，以鋁合金爲主體所構成。處理室2電氣地被接 地。在處理室2內部更配置可以載置半導體晶圓8，更好 爲可以載置以及保持之電極5 Α。高頻電源5被電氣地連 接於此電極5 A。高頻電源5對電極5 A供給高頻電力。 處理氣體供給部3通過供給路徑3 A被連接於處理室 2內部，將乾蝕刻處理所必要之處理氣體供給於處理室2 本紙張尺度適用令國國家標準（CNS)A4規格（21〇χ 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂——------線- 經濟部智慧財產局員工消費合作社印製 -17- 5^86 2 Λ7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明說明) 內部。處理氣體實用上可以使用例如C H F 3與C 0之混合 氣體= 真空排氣裝置（真空排氣泵）4係通過排氣路徑4Α 被連結於處理室2內部。在排氣路徑4 Α配置壓力調節閥 4B’排氣路徑4A調節處理室2內部之壓力。 在處理室2更配置觀察處理室2內部用之石英窗6 A 。在此石英窗6 A之外部配置分光器6及光傳感器6 C， 分光器6 B及光傳感器6 C監視處理室2內部之發光。 比熱檢測部1 0如上述之圖2所示般地，係以皮拉尼 真空計1 0 P，更好爲具有1秒以下之響應速度之皮拉尼 真空計1 0 P爲主體而構成，再者，實際上將比熱變化當 成壓力變化檢測之故，係具備：量測電路1 〇 C、直流電 源1 0 D等而構成而成。壓力檢測部2 0例如係使用通常 之壓力計之電容真空計。 半導體晶圓8雖然不一定限定在此種材料，但是，本 發明之第1實施形態中，係藉由單結晶矽所形成。此半導 體晶圓8重複進行：蝕刻處理、成膜處理、圖案複製處理 等，在表面上形成電路圖案，製作1個或複數個之半導體 裝置（半導體晶片）。 【基板處理製程、半導體裝置之製造製程】 接著，利用圖1至圖3說明使用上述半導體製造裝置 1 ，即乾蝕刻裝置之半導體裝置之蝕刻處理方法。又，此 處說明之半導體裝置之乾蝕刻處理係對應於本發明之「基 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公釐） -'---： ，裝 i I--I--訂-------- (請先閱讀背面之注意事項再填寫本頁> -18- A? 452862 ______B7__ 五、發明說明) 板處理方法」及「半導體裝置之製造方法」之一具體例者 〇 (1 )首先，於半導體製造裝置中，使用真空排氣裝 置4，通過排氣路徑4A，將處理室2內部充分排氣。處 理室2內部之壓力比進行乾蝕刻處理時之壓力還低1位數 以上之低壓爲適當。 (2 )將半導體晶圓8搬入處理室2內部，將此半導 體晶圓8載置保持在電極5 A上（如圖3所示步驟3 0， 以下相同）。本發明之第1實施形態之半導體晶圓8係使 用單結晶矽晶圓，在此單結晶矽晶圓表面上依據積層1 〇 nm之薄的薄膜之矽氧化膜（Si〇2) 、300nm之厚 的膜厚之多結晶矽（Si)膜、300nm之厚的膜厚之 矽氧化膜（S i 〇2)。薄的膜厚之矽氧化膜例如被當成構 築被形成在半導體晶圓8之積體電路之元件，具體而言， 爲 I G F E T ( insulated field effect transistor :絕緣場效 電晶體）之閛極絕緣膜使用。多結晶矽膜例如被當成 I G F E T之閘極電極使用。厚的膜厚之矽氧化膜例如被 當成多結晶矽膜與被形成在其上層之配線之間之層間絕緣 膜之一部份，又，被當成實現防止短通道效果之LDD ( lightly doped drain :輕度摻雜汲極）構造用之側壁間隔（ side wall spacer )使用。 在最上層之厚的薄膜之矽氧化膜上，爲在此厚的矽氧 化膜進行乾蝕刻處理時所使用之蝕刻光罩被形成之狀態。 蝕刻光罩例如實用上可以使用光阻膜，此蝕刻光罩例如係 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公釐） ---.··-------------------訂·！ - ---線— (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -19- 經濟部智慧財產局員工消費合作社印製 ( A7 ---— B7 五、發明說明（17 ) 藉由0·之線與間隔而形成。 (3) 藉由真空排氣裝置4一邊適度地將處理室2內 部排氣’一邊由處理氣體供給部3通過供給路徑3 A，對 處理室2內部供給處理氣體（步驟31)。此時，藉由被 配置在排氣路徑4A之壓力調節閥4 B，調整排氣之電導 (步驟3 2 )»處理氣體如上述般地，例如可以實用上使 用（：^卩3與（：0之混合氣體。 (4) 藉由比熱檢測部1 〇之皮拉尼真空計1 Ο P， 量測處理室2內部之處理氣體之比熱（處理前比熱），再 者’藉由壓力檢測部2 0之電容真空計*量測處理室2內 部之處理氣體之壓力（步驟3 3 )。於本發明之第1實施 形態中，被導入處理室2內部後之處理氣體之壓力係利用 皮拉尼真空計10P量測，爲56Pa »皮拉尼真空計 1 Ο P雖然直接量測處理室2內部之氣體氣氛之合計之比 熱，但是，遵循上述式< 1 >，可以將熱量換算爲壓力之 故，使用比熱檢測部1 0之量測結果最終可以以壓力表示 。另一方面，利用壓力檢測部2 0量測之處理氣體之壓力 爲 5 . 3 P a。 (5 )由高頻電源5對電極5 A供給高頻電力，藉由 此高頻電力之供給，由處理室2內部之處理氣體產生電漿 (步驟34)。高頻電力例如被設定爲3.4W/cm2。 藉由此電漿之產生，有助於乾蝕刻之適當的活性種、離子 等被產生，半導體晶圓8之表面之最上層之厚的膜厚之矽 氧化膜之乾蝕刻處理被開始（步驟3 5 )。 本紙張尺度適用中國國家標準<CNS)A4規格（210 X 297公釐） Γ I-------^ --------^ 0 I----I-- (請先閱讀背面之注意事項再填寫本頁) -20- 2 6 8 2 -0 4 經濟部智慧財產局員工消費合作社印製 A7 ---------B7__ 五、發明說明（l8 ) (6 )於乾蝕刻處理中，處理室2內部之電漿狀態之 氣體氣氛之比熱（處理中比熱）藉由比熱檢測部1 〇之皮 拉尼真空計1 〇 P被陸續量測，再者，壓力藉由壓力檢測 部2 0被陸續檢測（步驟3 6 )，乾蝕刻處理狀態被監視 著（步驟3 7 )。此乾蝕刻處理中所使用之比熱檢測部 1Q之電漿狀態之氣體氣氛之壓力爲在5 . 6P a至 6 ·_ 1 P a中變動。 (7 )乾蝕刻處理進行著，半導體晶圓8之表面上之 厚的膜厚之矽氧化膜被蝕刻，下層之多結晶矽膜一露出， 即一到達矽氧化膜之蝕刻終點，利用比熱檢測部1 〇之電 漿狀態之氣體氣氛之壓力，由6 . 1 P a向相當於處理前 比熱之5 6 P a之方向開始變化，最終成爲相當於處理 前比熱之5 · 6Pa。 由利用以上之處理室2內部之比熱檢測部1 0之壓力 之量測結果（比熱之量測結果），在比熱檢測部1 〇之量 測値由6 . 1 P a往5 · 6 P a開始變化之時間點，存在 乾蝕刻之終點，藉由監視以此比熱檢測部1 〇量測之壓力 之壓力變化，可以簡便、迅速而且正確地檢測蝕刻終點。 圖4中，縱軸矽顯示處理室2內部之氣體氣氛之壓力 (Pa)、橫軸係顯示乾蝕刻處理時間（秒）。於開始乾 蝕刻之時刻A，處理室2內部之處理氣體之壓力（換算利 用比熱檢測部1 0量測之處理前比熱之壓力）爲P 1 ( Pa)。如上述般地，於本發明之第1實施形態之半導體 製造裝置（乾蝕刻裝置）1中’壓力P1爲5 . 6Pa。 本纸張尺度適用中國國家標準（CNS)A4規格（210x 297公釐） ------------I --------^ · I -------1 ^ (請先間讀背面之注意事項再填寫本頁) -21 - 經濟部智慧財產局員工消費合作社印製 5^86 2 A7 B7 五、發明說明（19 ) 藉由高頻電力之供給，處理室2內部之氣體氣氛被電漿化 之時刻B之處理氣體之壓力爲P2 (Pa)。壓力P1爲 6 . IPa。由於電漿化之氣體氣氛之壓力變化之比例約 爲1 0數％。 而且，於時刻C中，處理室2內部之氣體氣氛之壓力 產生變化，藉由量測此壓力變化之時間點，可以檢測處理 之終點，再者，於時刻D中，可以當成乾蝕刻處理之終點 »由壓力變化產生之時刻C至回復至安定之平常狀態之壓 力（處理前比熱）爲止之時間At約1秒前後，本發明之 第1實施形態之比熱檢測部1 0由於採用具有1秒以下之 高速響應特性之皮拉尼真空計1 0 P之故，可以正確檢測 蝕刻終點。 又，時刻D之處理室2內部之氣體氣氛之最終壓力由 於乾蝕刻處理之電漿化或反應生成物，氣體種類之變化產 生，有多少產生壓力變動之情形之故，並不一定要與處理 前壓力一定要一致。又，於1 0秒以上之慢的響應速度之 皮拉尼真空計中，壓力變動之檢測上產生時間延遲之故， 並不適用於本發明之第1實施形態之比熱檢測部1 0。 如以上說明般地，本發明之第1實施形態可以獲得以 下之效果。 首先，在將電容真空計當成壓力計使用之情形，在電 容真空計之壓力檢測傳感器之電容器電極表面，藉由電漿 放電被解離之處理氣體（例如，c ?3或（：0之原料氣體） 之反應生成物當成堆積物附著其上。堆積物一附著在電容 本紙張尺度適用t國國家標準（CNS)A4規格（210 X 297公釐） --^-------------裝--------訂-- ---I--線，I (請先間讀背面之注意事項再填寫本頁) 2 A7 B7 五、發明說明<?〇 ) 器表面，此堆積物也成爲電容器（電容器之電容値變動） ，無法進行正確之壓力量測。此種現象，與其說在放電開 始前後產生，不如說是長時間變化產生者。實際上，將長 時間使用之電容真空計與新品之電容真空計安裝於同一之 處理室2，比較雙方之壓力量測値，其壓力量測値不同。 爲了防止此種因堆積物之附著所導致之壓力量測値之 變動，第1須具備：單純量測處理室2內部之壓力之電容 真空計，以及補助此電容真空計之壓力量測値之補助用電 容真空計。但是，此種手法，單單只爲了補助壓力量測値 ，另外要具備補助用電容真空計之故，單純地增加了真空 計之個數，增加半導體製造裝置1之製作成本以及半導體 裝置之製造成本。 又，第2 :經常加熱電容真空計之電容器電極之表面 ，有必要使電容器電極表面不附著堆積物。但是，此種手 法爲了防止堆積物之附著，必須成爲1 2 0°C〜1 3 0°C 程度之表面溫度地，不得不加熱電容器電極之表面，通常 市售之電容真空計之加熱容許溫度爲數十aC ( 5 0°C〜 8 0°C)之範圍內，高也無法耐超過1 〇 〇°C之故，實用 上無法加以利用。 相對於此，本發明之第1實施形態之半導體製造裝置 1之比熱檢測部1 0中，比熱檢測傳感器之皮拉尼真空計 1 0 P之鎢絲1 2例如以1 4 0 °C程度之溫度加熱之故， 可以防止堆積物之附著，而且，鎢絲1 2之材質係使用高 耐蝕性之白金（P t )之故，可以防止因爲腐蝕性氣體之 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐） ---：------------裝·-------訂-----I-- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印製 -23- A7 ___B7_____ 五、發明說明P ) 腐蝕。再者，使用具有1秒以下之高速響應性、 0·133Pa〜133000Pa之壓力量測之皮拉尼 真空計1 0 P，可以進行正確而且安定之比熱量測，結果 成爲可以進行正確而且安定之壓力量測。 再者，於本發明之第1實施形態之半導體製造裝置1 之比熱檢測部1 0中，如上述般地，在皮拉尼真空計1 0 P之鎢絲1 2使用P t之類的高耐蝕性材料，進而，不會 如電容真空計之電容器電極表面般地附著堆積物之故，在 開放於大氣之情形，沒有必要隔離比熱檢測部1 0之皮拉 尼真空計1 0 P =因此，比熱檢測部1 0與電容真空計相 比，處理上變得簡單，而且，可以使半導體製造裝置1之 製作成本便宜，再者，可以提升對於壓力量測之再現性以 及信賴性。 又，本發明之第1實施形態之半導體製造裝置1係在 基板處理方法以及半導體裝置之製造方法中，具備複數之 真空計，即比熱檢測部1 0以及壓力檢測部2 0，可以同 時監視不同之物理量之故，壓力量測精度可以更提升。例 如，如後述之圖5所示般地，在處理氣體使用〇2氣體之情 形，於電漿產生前後（放電開始前後），皮拉尼真空計以 及電容真空計之壓力量測値皆提升2倍程度，但是，在 C 4 F 8氣體之情形，對於電容真空計之壓力量測値在電漿 產生前後，上升若千之程度，皮拉尼真空計之壓力量測値 在電漿產生前後，減少6 7 %之程度。因此，使用混合氣 體，監視反應生成物也複雜之處理氣體之資訊，在檢測蝕 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐〉 <請先閱讀背面之注意事項再填窝本頁) -裝--------訂--------*線— 經濟部智慧財產局員工消費合作社印製 -24- 經濟部智慧財產局員工消費合作社印製 45^862 A7 B7 五、發明說明（22 ) 刻終點上，使用比熱檢測部1 〇以及壓力檢測部2 0，監 視由此雙方獲得之壓力量測値，必要時，藉由比較檢討雙 方之壓力量測値，可以進行正確而且安定之蝕刻控制。實 際上’監視什麼東西雖然很多依靠經驗，但是，藉由比較 電漿產生前後之壓力量測値，在嘗試各樣之現象之了解上 ，可以容易實行。例如，於乾蝕刻處理中，可以導出真空 度、·處理氣體之供給流量、高頻電力、半導體晶圓8之溫 度（基板溫度）、處理室2內部之溫度等之最適合之處理 條件參數。 再者，即使使處理條件參數一定，也有乾蝕刻處理安 定進行之情形。其原因可以舉出：例如處理室2內部之高 頻電力之供給量之變動、被此高頻電力激磁之偏壓之變動 、處理室2內部之元件之異常所導致之電漿生成狀態之偏 倚等。此種現象在由於維修更換處理室2內部之元件之前 後產生、經過長時間後發生。本發明之第1實施形態之半 導體製造裝置1係於基板處理方法以及半導體裝置之製造 方法中τ例如預先取得安定狀態之乾蝕刻處理之壓力量測 値等之資訊，藉由比對此壓力量測値等之資訊，監視乾蝕 刻處理，在乾蝕刻處理成爲不安定之狀態時，可以進行適 切之對策。例如，於以具有表面施以鉻酸鹽處理之鉻酸鹽 皮膜之鋁合金製作之處理室2中，鉻酸鹽皮膜剝離，底層 之鋁合金一成爲露出之狀態，此鋁合金被蝕刻，處理室2 內部之壓力量測値會變動。在此情形，處理室2內部之壓 力量測値異常變動時，可以停止乾蝕刻處理，進行處理室 本紙張尺度適用令國國家標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁) 裝------I — 訂--— — — ——--線- -25- 經濟部智慧財產局員工消費合作社印製 5^8β2 Α7 ___Β7___ 五、發明說明ι?3 ) 2內部之修補等之適切的對策。 再者，於本發明之第1實施形態中，乾蝕刻處理（後 述之淸理處理也相同）雖然以固定壓力調節閥4 B，以壓 力量測値變動之時間點爲乾蝕刻處理之終點加以說明|但 是，本發明之半導體製造裝置1中，也可以包含：使處理 室2內部之氣體氣氛之壓力成爲一定地，以壓力調節閥 4 B_調節壓力，進行乾蝕刻處理。壓力調節閥4 B之此種 之控制係藉由：量測壓力，依據此量測結果，使壓力成爲 一定地使壓力調節閥4 B動作，可以容易實現。而且，爲 了使此處理室2內部之氣體氣氛之壓力保持一定被輸出之 使壓力調節閥4 B動作之控制信號，如果改變表現方式， 相當於表示處理室2內部之氣體氣氛之壓力變動之蝕刻終 點之故，可以將上述控制信號當成蝕刻終點信號使用。 第2實施形態 本發明之第2實施形態係說明半導體製造裝置之處理 室內部之最適合淸理處理方法者。 【淸理處理方法之基本原理】 與上述之本發明之第1實施形態之半導體製造裝置1 ，基板處理方法及半導體裝置之製造方法有關，於處理室 2內部之氣體氣氛中，由電漿產生前後之比熱變化及壓力 變化，可以判明以下事項。 圖5係顯示電漿產生前後之以包含皮拉尼真空計1〇 本紙張尺度適用中國國家標準（CNS)A4規格（210 * 297公釐） - 政--I-----訂--I--I I I I (請先閱讀背面之注意事項再填寫本頁) •26- 5^86 2 A7 B7 五、發明說明p ) p之比熱檢測部1 0量測之各氣體之壓力量測値，以及以 包含電容真空計之壓力檢測部2 0量測之各氣體之壓力量 測値。即|圖5係顯示被使用於蝕刻氣體、載氣等之〇2、 N2、Ar 、CO、CHF3、CF4、C4F8 之各處理氣 體之電漿產生前後之壓力量測値。 電容真空計原理上可以進行比皮拉尼真空計更接近絕 對壓力之壓力檢測，可以認爲因放電（電漿產生）導致之 壓力童測値之變動少。實際上，放電開始前後如有組成大 爲變化之氣體，例如0 2氣體，可以明白放電會影響壓力之 量測。此放電之影響係真空計本身之問題，或是真空計以 外之問題？目前並不淸楚，如係真空計以外之可能性時， 可以推測爲如下：即，處理室2內部之氣氛爲〇2氣體之情 形，即在進行乾淸理之情形，放電後由電容真空計之壓力 量測値雖然由5.IPa上升至9.9Pa ，但是，評價 此上升現象*可以推測爲在處理室2內壁附著堆積膜（ C F X )，藉由〇2放電，堆積物被蝕刻，處理室2內部之 壓力上升。此現象可以藉由以下之反應式< 2 >表示之， 可以推測到分子數之增加關係到壓力上升。又，可以推測 由〇2至2 0之反應少。 CFx (固體）+〇2— CO + xF + O < 2 > 在C H F 3之情形，與放電開始同時地，C F X堆積於 處理室2之內壁之故，反之’分子數減少，可以推測到壓 本紙張尺度適用中國國家標準<CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂--！ιί -線 經濟部智慧財產局員工消費合作社印製 -27- < A7 _ B7 五、發明說明e ) 力量測値減少。 (請先閱讀背面之注意事項再填寫本頁) 又，如圖5所示般地，即使量測同一處理室2內部之 氣體氣氛之壓力’壓力量測値不同者係比熱檢測部1 〇之 皮拉尼真空計1 Ο P與壓力檢測部2 0之電容真空計量測 對象物物理上不同之故。 【半導體製造裝置之構成】 接著，說明本發明之第2實施形態之半導體製造裝置 〇 經濟部智慧財產局員工消費合作社印製 圖6所示之半導體製造裝置1基本上與第1實施形態 之半導體製造裝置1相同，係對處理基板之半導體晶圓8 進行乾蝕刻處理之乾蝕刻裝置。即此半導體製造裝置1也 至少由具備：在內部可以載置處理基板之半導體晶圓8之 處理室2:及對處理室2內部供給處理氣體之處理氣體供 給部3;及被連結於處理室2內部之真空排氣裝置4:及 檢測處理室2內部之處理氣體之比熱之比熱檢測部10所 構築而成《與本發明之第1實施形態之半導體製造裝置1 不同之點爲：不具備檢測處理室2內部之壓力之壓力檢測 部2 0。又，處理氣體供給部3除了乾蝕刻處理使用之處 理氣體（例如，CHF3與C ◦之混合氣體）之供給部外， 也具備供給進行乾淸理處理之處理氣體（淸理氣體）之供 給部。處理氣體例如可以實用上使用〇2氣體。進行此乾淸 理處理之處理氣體與本發明之第1實施形態之比熱檢測部 1 0相同地，係利用包含具有1秒以下之高速響應速度之 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） "28 - 經濟部智慧財產局員工消費合作社印製 452862 A7 _ B7 — - 五、發明說明（?6 ) 皮拉尼真空計1 0 P之比熱檢測部1 〇，檢測出壓力變化 (比熱變化）。又，半導體製造裝置1之其它之構成與本 發明之第1實施形態之半導體製造裝置1之構成相同。 【淸理處理製程】 接著，參考圖6說明上述半導體製造裝置1 ，即乾蝕 刻裝置之淸理處理。又，淸理處理通常被含入半導體裝置 之製造製程中。即進行複數次之蝕刻處理後，進行淸理處 理之故，此處說明之淸理處理係對應於本發明之「基板處 理方法」以及「半導體裝置之製造方法」之一具體例者。 (1 )首先，將由已經被進行乾蝕刻處理之例如 5 0 0片之半導體晶圓8中選擇特定之半導體晶圓8搬入 半導體製造裝置1之處理室2內部，將此半導體晶圓8載 置保持在電極5 A上。 (2) 由處理氣體供給部3對處理室2內部供給處理 氣體之〇2氣體，利用比熱檢測氣1 0量測此處理室2內部 之氣體氣氛之壓力。此量測結果，壓力爲3 . 5P a。 (3) 接著，對電極5A由高頻電源5供給4 . 9W /cm2之高頻電力，處理室2內部中產生電漿，開始淸理 處理。此電漿狀態之氣體氣氛之壓力利用比熱檢測部1 0 量測結果爲7 . 7 P a。 (4 )處理室2內部之壓力之後，隨著淸理處理之進 行，逐漸降低，利用比熱檢測部1 0量測結果，約3分鐘 後，處理室2內部之氣體氣氛之壓力與淸理處理開始時之 本纸張尺度適用中國國家標準（CNS)A4規格<2〗0 X 297公釐） r τ I --------裝 - -----1 訂-------1·線· ί靖先閱磧背面之注音？事項再填寫本頁> -29- 經濟部智慧財產局員工消費合作杜印製 A7 B7 五 '發明說明¢7 ) 壓力相等爲3 . 5P a。在此狀態將處理室2內部開放於 大氣看看’處理室2內壁之堆積物被乾淨去除，淸理處理45286 2 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs 5. Description of the Invention (1) Background of the Invention The present invention relates to a semiconductor manufacturing apparatus for processing substrates, a substrate processing method using the semiconductor manufacturing apparatus, and semiconductor devices. Production method. In particular, the present invention relates to a semiconductor manufacturing apparatus that performs an etching process on a substrate surface, an etching method for a substrate using the semiconductor manufacturing apparatus, and a method for processing inside the apparatus and a method for manufacturing a semiconductor device. Description of the conventional technology In the manufacture of semiconductor devices, various processes such as dry etching, CVD (Chemical Vapor Deposition), and dry processing are performed on semiconductor wafers. These processes are performed on semiconductor wafers. It is carried out mainly inside the vacuum chamber. For example, the dry etching process is performed in a dry etching apparatus 100 shown in FIG. The dry etching apparatus 100 includes: a vacuum chamber 101 (a vacuum container or a chamber); and an exhaust system 10 for exhausting the inside of the vacuum chamber 101; and a gas introduction for supplying an etching gas to the inside of the vacuum chamber 101. Port i 0 3; and the pressure inside the vacuum chamber 101 is maintained at a certain pressure gauge 104; and the quartz window 105 for observing the inside of the vacuum chamber 101: and the semiconductor wafer 1 1 10 is mounted, and the specified power is supplied. Electrode 10 6. The vacuum chamber 1 0 1 is formed of, for example, an aluminum alloy, and is electrically grounded (grounded). The high-frequency power source 107 is connected to the electrode 106. Applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) at the scale of stone paper ------------ wave · ------ order --------- (Please read the precautions on the back before filling this page) -4- 4 5286 2 A7 B7 Printing of clothing by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (?) Beamsplitters other than 1 0 5 1 0 8 and light sensor 10 9 can check the light emission inside the vacuum chamber 1 0 1. The pressure gauge 104 measures the pressure inside the vacuum chamber 101. For example, the pressure gauge 104 uses a diaphragm type vacuum gauge (capacitive pressure gauge: CM). The dry etching using the dry etching apparatus 100 shown in FIG. 8 was performed as follows. (1) First, a vacuum exhaust device (vacuum exhaust pump) (not shown) is used to fully exhaust the inside of the vacuum chamber 101 through the exhaust system 102. It is appropriate that the pressure is one digit lower. The semiconductor wafer 110 is carried into the vacuum chamber 110, and the semiconductor wafer 110 is placed on the electrode 106. (2)-While evacuating the inside of the vacuum chamber 101, supply a proper gas to the inside of the vacuum chamber 101 through the gas introduction port 103. At this time, the inside of the vacuum chamber 101 is set to a constant pressure, and a pressure adjustment valve 111 disposed in the vacuum chamber 101 is used to adjust the conductance of the exhaust gas. (3) — A suitable high-frequency power is supplied from the high-frequency power source 107 to the electrode 106, and a plasma is generated inside the vacuum chamber 101 to generate appropriate active species or ions. With this active species or ions, the surface or thin film on the surface of the semiconductor wafer 110 is etched. (4) In this etching, for example, the end point can be detected by monitoring the light emission of specific elements in the plasma. For example, in the case where the poly silicon film of polycrystalline sand film is dried with chlorine (C 1 2) gas for a few moments, the end point of the etching can be detected by monitoring the light emission of Si C 1 (wavelength of 4 05 nm). At the end of the etching, the reaction of chlorine (c 1) and silicon (S i) produces the paper size applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page ) -Installation ----- ί Order- ------- line- -5- 4528〇 ^ 7 B7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention Because the amount of 1 is greatly reduced in the plasma, the time point at which the amount of light emission is significantly reduced can be regarded as the end point of the etching. There is no particular limitation on the setting of the monitoring wavelength, which is determined empirically. Moreover, the half width of the spectroscopic beam is not limited to extracting a specific line spectrum. In the dry etching apparatus 100 described above, the following points were not taken into consideration. (1) A pressure gauge 104 installed in the vacuum chamber 100 of the dry etching apparatus 100 is used to measure the pressure so that the pressure inside the vacuum chamber 100 is always constant. The pressure inside the vacuum chamber 101 is often maintained to a certain degree, and a stable dry etching process can be achieved. However, if a large number of semiconductor wafers 1Ί0 are continuously processed, the reaction products generated by etching, especially the reaction products with low vapor pressure, cannot be exhausted through the exhaust system 1 〇2 and are stacked in the vacuum chamber 1 0 1 The inner wall. The reaction products are also deposited on the quartz window 105. As the etching process continues, the transparency of the quartz window 105 which is at a monitored wavelength (in this case, a wavelength of 450 nm) decreases, making it difficult to detect the end of the etching. . In addition, in the case where the accumulation amount of the reaction product is large, the detection of the end point of the etching cannot be performed. That is, it becomes very difficult to control the etching amount of the dry etching process. Furthermore, in the dry etching process, the processing accuracy is reduced, and the processing accuracy of the dry etching apparatus 1000 itself is also reduced. (2) In order to prevent such a reduction in processing accuracy beforehand, a processing is performed. The treatment is as follows: the vacuum chamber 101 is opened to the atmosphere, and the reaction products attached to the inner wall of the vacuum chamber 101 and the surface of the quartz window 105 are removed. However, after performing the dry etching treatment after the caulking treatment, it is necessary to evacuate the inside of the vacuum chamber 101 again. Once again, the paper size applies Chinese National Standard (CNS) A4 (210 x 297 mm)] ^ 44 ^ -------- ^ < I ----- I | * ^ (Please read the idea on the back before filling out this page) -6- Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 45286 2 A7 B7 V. Description of Invention (4) Start It takes at least 3 hours until the dry etching process is completed. In the case of relatively long days, the efficiency of the dry etching device 100 will decrease by 0 (3). Generally, it is used in the processing system. The following treatment methods are for dry treatment. That is, as in the case of performing the dry etching process, the inside of the vacuum chamber 100 is fully evacuated, and an appropriate processing gas different from the etching process is supplied to the inside of the vacuum chamber 101 to maintain a certain pressure. A method of applying high-frequency power to the electrode 6 to make the gas into a plasma state and removing the reaction products attached to the inside of the vacuum chamber 101 or the surface of the quartz window 105. The light emission spectrometry is performed in the same manner as the etching process, and the time at which the monitoring of the luminous intensity inside the vacuum chamber 1 0 1 is fully restored through the quartz window 1 0, or the inner wall of the vacuum chamber 1 1 or the quartz window 1 is restored. The point at which the specific line spectrum from the reaction product on the surface of 0 5 is sufficiently reduced is set as the end point of the logic treatment, and the detection is performed. However, this kind of dry treatment is biased in the effect of the treatment. Only the monitoring of the luminous intensity can detect the endpoint of the correct treatment. Therefore, it is necessary to use a wet etching process in which the inside of the vacuum chamber 101 is opened to the atmosphere after repeated drying treatments are repeated several times. The wet etching process not only removes the cloud and fog of the quartz window 105, but also removes the internal stress that is accumulated due to the thick,-peeling off the reaction products inside the vacuum chamber 101. This spalled reaction product is a cause of particles having a reduced throughput in the dry etching process of the dry etching device 100. Therefore, it is necessary to remove the reaction product by wet etching before peeling it off. (4) In recent years, in the dry etching device 100 or plasma CVD device, the paper size is applicable to the national standard (CNS) A4 specification. < 210 X 297 mm > I i --------- Order ----- IIIH I (Please read the precautions on the back before filling out this page) System 4 5286 ^ A7 B7 V. Invention Description The pressure at which the device is used is about 0.1 Pa to 100 Pa. Capacitive gauges are vacuum gauges that can detect pressures in this range with good reproducibility. The capacitance vacuum gauge is: one side of the capacitor electrode is exposed to the measured side, 'the pressure of the measured side is deformed', the capacitor electrode is deformed, and the capacitance (charge) of the capacitor is changed, and the change is converted into a change in pressure 'Can measure pressure. The capacitance vacuum gauge can directly measure the pressure of the gas atmosphere, and has the characteristic of high accuracy in measuring pressure. However, 'semiconductor manufacturing equipment or plasma CVD equipment uses plasma for processing. Active atoms or active molecules are generated by older children. These will accumulate on the surface of the capacitor electrode of the capacitance vacuum gauge. reduce. (5) Furthermore, a capacitive vacuum gauge for measuring pressures from 0.1 IPa to 10 Pa with high accuracy has a sensitive (high-sensitivity) sensor section, and the limit of the possible pressure of such a sensor section is at most 1 0 0 0 pa degree. When the inside of the vacuum chamber 101 is opened to the atmosphere, it is necessary to isolate the sensor section and maintain the sensor section in a high vacuum. However, the pressure increase caused by a small amount of leakage will also affect the measurement accuracy of the sensor section. It takes a considerable time to fully exhaust the inside of the vacuum chamber 101 until the measurement pressure is stable. Summary of the Invention The present invention has been made to solve the above problems. Therefore, an object of the present invention is to provide a semiconductor manufacturing device, a substrate processing method, and a manufacturing method of a semiconductor device that can improve processing accuracy such as etching processing and lithographic processing. In particular, the purpose of the present invention is to provide a paper size applicable to the country Standard (CNS) A4 specifications (210 X 297 mm) I. ----- Attack --- One! Order !! ---- line (please read the notes on the back before filling out this page) -8-Printed by A7 B7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs 5. Description of the invention (?): It can improve the etching process. Endpoint detection accuracy semiconductor manufacturing device, substrate processing method, and semiconductor device manufacturing method. Furthermore, an object of the present invention is to provide a semiconductor manufacturing apparatus, a substrate processing method, and a manufacturing method of a semiconductor device, which can improve the efficiency of operation. In particular, it is an object of the present invention to provide a semiconductor manufacturing apparatus, a substrate processing method, and a semiconductor device manufacturing method that can shorten the processing time and improve the overall processing efficiency. In particular, an object of the present invention is to provide a semiconductor manufacturing apparatus, a substrate processing method, and a semiconductor device manufacturing method that can shorten the time required to set the state inside the measurement processing chamber and improve the overall processing efficiency. Furthermore, an object of the present invention is to provide a semiconductor manufacturing apparatus, a substrate processing method, and a manufacturing method of a semiconductor device, which can improve the manufacturing yield. In order to solve the above-mentioned problems, a first feature of the present invention includes the following semiconductor manufacturing apparatus: a processing chamber in which a processing substrate can be placed; and a processing gas supply unit that supplies a processing gas to the inside of the processing chamber; Specific heat detection section for the specific heat of the process gas. Here, the cells of the specific heat detection section include a Pirani vacuum gauge. Furthermore, a Pirani vacuum gauge having a response speed of 1 second or less can be used practically. The specific heat detection unit preferably includes at least a Pirani vacuum gauge and a measurement circuit that converts the specific heat detected by the Pirani vacuum gauge into an electrical signal. The measurement circuit can practically use a Wheatstone bridge circuit. The processing gas supply department provides: the etching gas for etching the surface of the substrate. The paper size is applicable_CNS Standard A4 (210 X 297 mm) (Read the precautions on the back before filling in this page)- Equipment!-Ί Order --- --- II · Line · -9- 4 5286 Printed by A7 B7, Industrial Property Cooperative, Intellectual Property Bureau, Ministry of Economic Affairs V. Description of Invention (7), or in the processing room It is preferable that the semiconductor manufacturing device according to the first feature of the present invention includes: a high-frequency electrode disposed inside the processing chamber and a processing substrate; and a high-frequency electrode connected to the high-frequency electrode. And a vacuum exhaust device connected inside the processing chamber. The processing substrates can be semiconductor substrates, glass substrates, wiring substrates, metal substrates, insulating substrates, resin substrates, etc. Semiconductor manufacturing equipment can process these substrates. Such a semiconductor manufacturing apparatus according to the first feature of the present invention includes a specific heat detection unit to detect the specific heat of the processing gas inside the processing chamber, so that the processing gas can be detected simply, quickly, and accurately. The specific heat can improve the processing accuracy. Furthermore, because the specific heat detection section has a simple structure, a semiconductor manufacturing device that can improve the processing accuracy can be easily implemented. The second feature of the present invention includes the following semiconductor manufacturing devices: Processing can be placed inside A processing chamber for a substrate; a processing gas supply section for supplying a processing gas to the interior of the processing chamber; and a vacuum exhaust device connected to the interior of the processing chamber: and a specific heat detection section for detecting a specific heat of the processing gas inside the processing chamber; and a detection process The pressure detection unit for the pressure inside the room. Here, the specific heat detection unit preferably includes a Pirani vacuum gauge having a response speed of less than 1 second. The pressure detection unit can be a practical use of a capacitance vacuum gauge. 2Features of semiconductor manufacturing equipment, in addition to this paper size apply Chinese National Standard (CNS) A4 specifications (210 X 297 mm) --- 7 ----------------- ------ I-^ I (please read the unintentional matter on the back before filling this page) -10- 45286 Employees of Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the cooperative A7 B7 V. Description of invention (6) invention In addition to the effect obtained by the semiconductor manufacturing apparatus of the first feature, the pressure measurement can be performed more simply, quickly, and accurately because of the simultaneous provision of a specific heat detection section and a pressure detection section that are physically different from the measurement target. 3 is characterized by a substrate processing method including the following processes: (a) a process of disposing a processing substrate inside a processing chamber; (b) a process of supplying a processing gas to the interior of the processing chamber: (c) using the processing gas inside the processing chamber, Projects for processing substrates for specified processing: (d) Measuring the specific heat of the processing gas inside the processing chamber, and controlling the processing of the processing substrates by the change in the specific heat; Here, the best project (b) is the supply Process of etching gas, process (c) is a process of performing an etching process on a processing substrate by an etching gas. Furthermore, it is preferable that the process (d) is to measure the specific heat before the etching gas supplied to the processing chamber inside before the etching process, and measure the specific heat during the processing of the etching gas inside the processing chamber during the etching process. At the stage where the specific heat before the process is changed, a control process is performed to stop the etching process. In addition, the specific heat of the process gas in process (d) is measured by a Pirani vacuum gauge, more preferably a Pirani vacuum with a response speed of less than 1 second. In the substrate processing method according to the third feature of the present invention, the processing can be stopped easily and quickly and accurately at the stage where the specific heat of the processing gas inside the processing chamber is changed. In particular, simple, rapid and accurate etching can be performed. The fourth feature of the present invention is the substrate processing of the third feature of the present invention. The paper size is applicable to the Chinese solid standard (CNS) A4 specification (210 X 297 mm) ---; ---- T ---- I--install ----- ί- order --------- line- (please read the precautions on the back before filling this page) -11-45 ^ 8 6, A7 B7 V. Description of the invention (9) The method includes the following substrate processing methods. (e) the process of supplying processing gas to the interior of the processing chamber; (f) the process of processing the interior of the processing chamber by the processing gas inside the processing chamber; (g) measuring the temperature of the processing gas inside the processing chamber Specific heat • By this specific heat change, control the engineering process. + Here, the engineering (g) measures the specific heat before processing of the processing gas supplied to the interior of the processing chamber before processing, and the specific heat during processing of the processing gas inside the processing chamber during processing, during processing. The specific heat is controlled to stop the processing in the stage where the specific heat is changed before the treatment. Furthermore, the project (g) is preferably a project that measures the specific heat of the plasma state of the processing gas and controls the processing of the processing. In such a basic method of the fourth feature of the present invention, it is possible to perform simple, rapid, and accurate processing when the specific heat of the processing gas inside the processing chamber is changed to stop the processing. A fifth feature of the present invention is a substrate processing method including the following processes. (a) a process of disposing a processing substrate inside the processing chamber; (b) a process of supplying a processing gas formed of at least one kind of gas inside the processing chamber; (c) inside the processing chamber, processing the substrate by the processing gas (D) Measure the specific heat of the processing gas inside the processing chamber, and use the change in the specific heat to control the specified processing of the processing substrate: (e) Measure the pressure of the processing gas inside the processing chamber Based on this, the paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) ------ Line. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -12- ^ 286, ^ 286, Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (10) Changes in power Process for controlling prescribed processing of the processing substrate "Here, it is preferable that the specific heat of the process gas of the process (d) is measured by a Pirani vacuum gauge having a response speed of less than 1 second, and that of the process (e) The pressure of the process gas is measured by a diaphragm vacuum gauge Measurement. In the substrate processing method of the fifth feature of the present invention, in addition to the substrate processing method of the third feature of the present invention, the measurement of the specific heat of the processing gas and the measurement of the physical pressure of the measurement object are based on Because the measurement of both parties performs the prescribed processing, the prescribed processing can be performed more simply, quickly, and accurately. A sixth feature of the present invention is a method for manufacturing a semiconductor device including the following processes. (a) a project in which a semiconductor wafer is arranged inside a processing chamber; (b) a process in which a processing gas is supplied to the inside of the processing chamber: (c) a process in which a semiconductor wafer is subjected to a prescribed treatment in the processing chamber by the processing gas: (d) ) Measure the specific heat of the processing gas inside the processing chamber, and control the process of the prescribed processing on the processing substrate by the change of the specific heat. In the method for manufacturing a semiconductor device according to the sixth feature of the present invention, an effect equivalent to that of the substrate processing method according to the third feature of the present invention can be obtained. Description of a suitable embodiment Hereinafter, an embodiment of the present invention will be described with reference to the drawings. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm). ---------- Table ------------ Order! 1! Please fill in this page for further information) -13- 5 ^ 8β A7 B7 Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention) First embodiment [the structure and operating principle of the specific heat detection unit] The structure and operating principle of the specific heat detection section of the semiconductor manufacturing apparatus of the first embodiment. In addition, the structure and operating principle of the specific heat detection section of the semiconductor manufacturing apparatus according to the second embodiment of the present invention are the same as the structure and operating principle of the specific heat detection section of the first embodiment of the present invention. The specific heat detection unit 10 of the first embodiment of the invention is a Pirani vacuum gauge with a high-speed response of 100 °. The Pirani vacuum gauge 10 is inside the storage container 1 1, and a distance is provided from the wall 13 of the storage container 11. A tungsten wire 12 is provided at the center of the storage container 11. This tungsten wire 12 is the main constituent element of the Pirani vacuum gauge 1 〇. One end of the storage container 11 is opened inside the processing chamber (2) for measuring the specific heat of the semiconductor manufacturing apparatus (1). One end of the upper side of the tungsten wire 12 is connected to the terminal 1 4 disposed on the upper side of the storage container 11, and the other end of the lower side of the tungsten wire 12 is connected to the terminal 1 5 disposed on the lower side of the storage container 11 . These terminals 14 and 15 are used not only as electrode terminals, but also as supports for tungsten wires 12. The Pirani vacuum gauge 1 Ο terminals 1 4 and 1 5 transmit measurement circuit 1 0 C is connected to the DC power supply 10D and the switching element 10S = measurement circuit 10C in the first embodiment of the present invention, for the benefit The Steinbridge Wheatstone bndge circuit is configured to detect the thermal change of the tungsten wire 12 as a current change. The operating principle of the Pirani vacuum gauge 10 P is as follows. Gas molecules and size of this paper apply Chinese National Standard (CNS) A4 (210 X 297 mm) ------------- ^ i --- 1-^ ----- ---- ^ < Please read the general matters on the back before filling this page) -14-6 Λ7 Β7 V. Description of the invention (12) When the tungsten wire 12 heated to a certain temperature conflicts, the tungsten wire 12 is deprived of heat. Also, the heated gas molecules collide with the wall 13 of the storage container 11 'and the heat is taken away by the wall 13. The ratio of the heat Q lost by the tungsten wire 12 through the gas molecules is proportional to the number of gas molecules that conflict with the tungsten wire 12 ', that is, the pressure P. The measurement that takes thermal change as the pressure change measurement is a Pirani vacuum gauge 1 0p ° Tungsten wire 12 Lost heat < 3 also depends on the specific heat of gas molecules. Here, it is assumed that the temperature of the gas molecule 16 before the conflict is Tg (equivalent to the temperature of the wall 13), the temperature of the gas molecule 17 after the conflict is T f (equivalent to the temperature of the tungsten wire 12), and the gas The molecular weight of the molecule is M, the thermal adaptation coefficient is α, the specific heat of the constant pressure of the gas is C ρ, the specific heat of the constant product of the gas is C ν, and the heat loss Q of the tungsten wire 12 can be expressed by the following formula < 1 > Q = a ((T + l) / (r -l)) M'W2 (Tf-Tg) P < 1 > However, r = cp / Cv. Even if the pressure p changes, the temperature T f of the conflicted gas molecules 17 will not change. Using a child test circuit (Wheatstone bridge circuit) 1 0 C to control, the tungsten wire 12 loses heat Q That is, the electric power supplied to the tungsten wire 12 is proportional to P, and the measurement of the pressure becomes possible. By the above < 1 > It can be clearly understood that, in general, the type of the gas varies, and the number of measurements also changes. Moreover, in the case of several kinds of mixed gas, the change of the number of 値 is more complicated. Therefore, the Pirani vacuum gauge 1 〇 cannot measure the absolute pressure. With the Pirani vacuum gauge 1 ο P, the specific heat of the gas is measured. The paper size is applicable to the national standard (CNS) A4 specification (210x 297). (Mm) (Please read the precautions on the back before filling out this page} --Installation · ------- Order --------- line. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs- 15- Coffee 2 A. ___ _ B7 V. Description of the Invention (13) For example, in the dry etching process, if the front and back of the etching are considered, the components or reactions of the reaction products generated by the etching reaction before and after the end are considered. The composition ratio of the material changes, and the specific heat of the entire mixed gas inside the processing chamber also changes. The Pirani vacuum gauge 10 P detects this change in specific heat. The Pirani vacuum gauge 1 〇 according to the first embodiment of the present invention is practical It can be used with a high response speed, preferably with a response speed of less than 1 second. For example, a high-precision Pirani vacuum gauge manufactured by '7 Shao A 7 Xi Company can be applied to the present invention. Such high-precision Pirani The vacuum gauge is improved due to the signal processing or thermal insulation of the control system. The responsiveness of noise achieves a response speed of less than 1 second. In addition, the measurement range of this high-precision Pirani vacuum gauge has also been extended to a wide range of 0.133Pa to 133000Pa (0.001 to 1000 torr). In the Pirani vacuum gauge with a slow response speed in the order of seconds, for example, even if it is used to detect the end of etching, the correct end time cannot be detected. In addition, such a slow response Pirani vacuum gauge usually has 1 3 3 P a ~ 6 6 5 0 0 P a narrow measurement range, especially high vacuum range such as 0.1 3 3 P a low pressure, high-precision measurement can not be obtained, not used here Pressure measurement in various ranges. As described above, the Pirani vacuum gauge 1 P of the first embodiment of the present invention measures the specific heat of the gas atmosphere inside the processing chamber. Based on this measurement, it is possible to know the temperature inside the processing chamber. Pressure. In contrast, the commonly used capacitive vacuum gauge measures pressure in principle * and is different in principle from the Pirani vacuum gauge. In addition, if you compare the gas atmosphere immediately after being supplied to the inside of the processing chamber, the paper size Applicable Chinese Standard (C NS) A4 size (210 X 297 male cage) (please read the back; please fill in this page first) '' Equipment -------- Order --------- Line-Economy Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperatives -16- A7 B7 V. Description of the Invention (14) The gas atmosphere in the plasma state before processing. By the plasmaization, the decomposition of gas molecules β is promoted. The actual pressure changes before and after the plasma is generated. The physical quantities measured by the Pirani vacuum gauge and the capacitance vacuum gauge are different. Therefore, the measurement volume of each gauge must be different. [Structure of Semiconductor Manufacturing Apparatus] Next, a semiconductor manufacturing apparatus according to a first embodiment of the present invention will be described. The semiconductor manufacturing apparatus 1 shown in FIG. 1 is a dry etching processing apparatus that performs dry etching processing on a semiconductor wafer 8 serving as a processing substrate. The semiconductor manufacturing apparatus 1 includes a processing chamber 2 including a semiconductor wafer 8 on which a processing substrate cannot be placed, and a processing gas supply unit 3 that supplies a processing gas to the inside of the processing chamber 2; and is connected to the processing chamber 2 The internal vacuum exhaust device 4; and the specific heat detection section (the first measuring meter) 10 for detecting the specific heat of the processing gas inside the processing chamber 2; and the pressure detection section (the second measuring meter) for detecting the pressure inside the processing chamber 2 ) 20 is constructed. The processing chamber 2 is a vacuum container (cavity) 'whose inside can be a high vacuum. For example, the processing chamber 2 is composed of an aluminum alloy as a main body. The processing chamber 2 is electrically grounded. A semiconductor wafer 8 can be placed inside the processing chamber 2, and an electrode 5A can be placed and held. A high-frequency power source 5 is electrically connected to this electrode 5A. The high-frequency power source 5 supplies high-frequency power to the electrode 5A. The processing gas supply unit 3 is connected to the inside of the processing chamber 2 through a supply path 3 A, and supplies the processing gas necessary for the dry etching process to the processing chamber 2 This paper is in accordance with the national standard (CNS) A4 standard (21〇χ 297) (Mm) (Please read the precautions on the back before filling out this page) Packing -------- Ordering -------- Line-Printed by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -17- 5 ^ 86 2 Λ7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention). The process gas can be practically used as a mixture of C H F 3 and C 0. The gas = vacuum exhaust device (vacuum exhaust pump) 4 is connected to the inside of the processing chamber 2 through an exhaust path 4A. The exhaust path 4A is provided with a pressure regulating valve 4B '. The exhaust path 4A regulates the pressure inside the processing chamber 2. The processing chamber 2 is further provided with a quartz window 6 A for observing the inside of the processing chamber 2. A spectroscope 6 and a light sensor 6 C are arranged outside the quartz window 6 A, and the spectroscope 6 B and the light sensor 6 C monitor the light emission inside the processing chamber 2. As shown in FIG. 2 described above, the specific heat detection unit 10 is mainly composed of a Pirani vacuum gauge 10 P, and more preferably a Pirani vacuum gauge 10 P having a response speed of 1 second or less. In addition, the change in specific heat is actually used as the detection of the pressure change, and it is constituted by including a measurement circuit 100C, a DC power supply 10D, and the like. The pressure detection unit 20 is, for example, a capacitance vacuum gauge using a general pressure gauge. Although the semiconductor wafer 8 is not necessarily limited to such a material, in the first embodiment of the present invention, it is formed of single crystal silicon. This semiconductor wafer 8 is repeatedly subjected to an etching process, a film forming process, a pattern copying process, etc., a circuit pattern is formed on the surface, and one or a plurality of semiconductor devices (semiconductor wafers) are produced. [Substrate Processing Process and Manufacturing Process of Semiconductor Device] Next, an etching process method for a semiconductor device using the above-mentioned semiconductor manufacturing device 1, that is, a dry etching device, will be described with reference to FIGS. 1 to 3. In addition, the dry etching process of the semiconductor device described here corresponds to the "basic paper size applicable to the Chinese National Standard (CNS) A4 specification (210x 297 mm)" -'---: --Order -------- (Please read the precautions on the back before filling in this page> -18- A? 452862 ______B7__ V. Description of the invention) Board processing method "and" Semiconductor device manufacturing method " As a specific example, (0) First, in a semiconductor manufacturing apparatus, a vacuum exhaust device 4 is used, and the inside of the processing chamber 2 is sufficiently exhausted through an exhaust path 4A. The pressure inside the processing chamber 2 is preferably a low pressure which is one digit or more lower than the pressure during the dry etching process. (2) The semiconductor wafer 8 is carried into the processing chamber 2 and the semiconductor wafer 8 is placed and held on the electrode 5 A (as shown in step 3 in FIG. 3, the same applies hereinafter). The semiconductor wafer 8 according to the first embodiment of the present invention is a single-crystal silicon wafer. On the surface of the single-crystal silicon wafer, a silicon oxide film (SiO 2) of 300 nm and a thin film of 300 nm are laminated on the surface of the single crystal silicon wafer. A polycrystalline silicon (Si) film having a thick film thickness, and a silicon oxide film (Si02) having a film thickness of 300 nm. A thin silicon oxide film having a thin film thickness is used, for example, as an element for constructing an integrated circuit formed on a semiconductor wafer 8. Specifically, it is used as a gate insulating film of an IGFET (insulated field effect transistor). . The polycrystalline silicon film is used, for example, as a gate electrode of I G F E T. A thick silicon oxide film is, for example, used as a part of an interlayer insulating film between a polycrystalline silicon film and a wiring formed above it, and is also used as an LDD (lightly doped drain: Side wall spacers for lightly doped drain) structures are used. On the silicon oxide film of the uppermost thick film, the etching mask used when the thick silicon oxide film is subjected to dry etching is formed. For example, a photoresist film can be used as an etch mask. This etch mask is, for example, a Chinese paper standard (CNS) A4 (210x 297 mm). ---. ·· -------- ----------- Order! ---- Line— (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-19- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (A7 ----- B7 5 Explanation of the invention (17) It is formed by a line and a space of 0. (3) The vacuum exhaust device 4 is used to exhaust the inside of the processing chamber 2 to a certain degree while passing the processing gas supply unit 3 through the supply path 3 A. The process gas is supplied to the inside of the processing chamber 2 (step 31). At this time, the conductance of the exhaust gas is adjusted by the pressure regulating valve 4 B disposed in the exhaust path 4A (step 3 2) »The process gas is as described above For example, a mixed gas of (: ^ 卩 3 and (: 0) can be used practically. (4) The specific heat of the processing gas inside the processing chamber 2 is measured by a Pirani vacuum gauge 1 〇P of the specific heat detection unit 10. (Specific heat before processing), and further, the pressure of the processing gas inside the processing chamber 2 is measured by a capacitance vacuum gauge of the pressure detecting section 20 (step 33). In the first embodiment of the present invention, it is introduced The pressure of the processing gas inside the processing chamber 2 is 10P using a Pirani vacuum gauge The measurement is 56Pa. »Pirani vacuum gauge 1 〇 Although the total specific heat of the gas atmosphere inside the processing chamber 2 is directly measured, follow the above formula < 1 > Since the heat can be converted into pressure, the measurement result using the specific heat detection section 10 can be finally expressed in pressure. On the other hand, the pressure of the process gas measured by the pressure detecting section 20 was 5.3 P a. (5) The high-frequency power supply 5 supplies high-frequency power to the electrode 5A, and the supply of the high-frequency power generates a plasma from the processing gas inside the processing chamber 2 (step 34). The high-frequency power is set to 3.4 W / cm2, for example. With the generation of the plasma, appropriate active species, ions, etc. that contribute to the dry etching are generated, and the dry etching process of the silicon oxide film with a thickness of the uppermost layer on the surface of the semiconductor wafer 8 is started (step 3 5). This paper size applies to Chinese national standards < CNS) A4 size (210 X 297 mm) Γ I ------- ^ -------- ^ 0 I ---- I-- (Please read the precautions on the back first (Fill in this page) -20- 2 6 8 2 -0 4 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 --------- B7__ V. Description of the invention (l8) (6) in dry etching process The specific heat (specific heat during processing) of the plasma atmosphere in the processing chamber 2 is measured successively by a Pirani vacuum gauge 10 of the specific heat detection unit 10, and further, the pressure is measured by the pressure detection unit 2 0 is successively detected (step 36), and the dry etching process status is monitored (step 37). The pressure of the gas atmosphere in the plasma state of the specific heat detection section 1Q used in this dry etching process varies from 5.6P a to 6 · _1 P a. (7) The dry etching process is carried out. The silicon oxide film with a thick film thickness on the surface of the semiconductor wafer 8 is etched. As soon as the underlying polycrystalline silicon film is exposed, that is, the end point of the silicon oxide film is reached, and the specific heat is used for detection. The pressure of the gas atmosphere in the plasma state of Part 10 began to change from 6.1 Pa to a direction corresponding to 5 6 Pa before the heat treatment, and finally became 5 · 6 Pa corresponding to the heat before treatment. From the measurement result of the specific heat detection section 10 pressure in the processing chamber 2 (specific heat measurement result), the measurement in the specific heat detection section 10 is performed from 6. 1 P a to 5 · 6 P a At the time point when the change started, there was the end point of the dry etching. By monitoring the pressure change of the pressure measured by the specific heat detection unit 10, the end point of the etching can be detected simply, quickly, and accurately. In FIG. 4, the vertical axis silicon shows the pressure (Pa) of the gas atmosphere inside the processing chamber 2, and the horizontal axis shows the dry etching process time (seconds). At time A when dry etching is started, the pressure of the processing gas inside the processing chamber 2 (converted to the specific heat pressure before processing measured by the specific heat detection section 10) is P 1 (Pa). As described above, the pressure P1 in the semiconductor manufacturing apparatus (dry etching apparatus) 1 according to the first embodiment of the present invention is 5.6 Pa. This paper size applies to China National Standard (CNS) A4 (210x 297 mm) ------------ I -------- ^ · I ------- 1 ^ (Please read the notes on the back before filling this page) -21-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5 ^ 86 2 A7 B7 V. Description of the invention (19) With high-frequency power supply, The pressure of the processing gas at the time B when the gas atmosphere inside the processing chamber 2 is plasmatized is P2 (Pa). The pressure P1 is 6. IPa. The proportion of the pressure change due to the plasma atmosphere is about 10%. Moreover, at time C, the pressure of the gas atmosphere inside the processing chamber 2 changes. By measuring the time point of this pressure change, the end of the process can be detected, and at time D, it can be regarded as the dry etching process. End point »The time At from the time C generated by the pressure change to returning to the stable normal pressure (specific heat before processing) is about 1 second. The specific heat detection unit 10 of the first embodiment of the present invention has a value of 1 second. The following high-speed response characteristics of the Pirani vacuum gauge 10 P can accurately detect the end of the etching. In addition, the final pressure of the gas atmosphere inside the processing chamber 2 at time D is caused by changes in the type of gas due to the plasmaization or reaction products of the dry etching process, and how much pressure fluctuations may occur. The front pressure must be consistent. In addition, in the Pirani vacuum gauge having a slow response speed of 10 seconds or more, a time delay is caused in the detection of pressure fluctuations, which is not suitable for the specific heat detection unit 10 of the first embodiment of the present invention. As described above, the first embodiment of the present invention can achieve the following effects. First, when the capacitance vacuum gauge is used as a pressure gauge, on the surface of the capacitor electrode of the pressure detection sensor of the capacitance vacuum gauge, a dissociated processing gas (for example, c? 3 or (: 0 raw material gas) is discharged by plasma discharge. The reaction product is attached to it as a deposit. The deposit is attached to the capacitor. The size of the paper is applicable to the national standard (CNS) A4 specification (210 X 297 mm)-^ --------- ---- Equipment -------- Order ----- I--line, I (Please read the precautions on the back before filling this page) 2 A7 B7 V. Description of the invention <? 〇) The surface of this device also becomes a capacitor (capacitance of capacitor changes), and accurate pressure measurement cannot be performed. This phenomenon is not caused by long-term changes rather than occurring before and after the start of discharge. In fact, a long-term capacitor vacuum gauge is installed in the same processing chamber 2 as a new capacitor vacuum gauge, and the pressure measurements of the two sides are compared. The pressure measurements are different. In order to prevent such a change in pressure measurement caused by the adhesion of deposits, the first must have a capacitance vacuum gauge that simply measures the pressure inside the processing chamber 2 and a pressure measurement instrument that subsidizes the capacitance vacuum gauge. Subsidiary capacitor vacuum gauge. However, this method is only for the purpose of subsidizing pressure measurement. In addition, it is necessary to provide a capacitive vacuum gauge for subsidy. The number of vacuum gauges is simply increased, and the manufacturing cost of the semiconductor manufacturing device 1 and the manufacturing cost of the semiconductor device are increased. . Secondly, the surface of the capacitor electrode of the capacitor vacuum gauge is often heated, and it is necessary to prevent the deposit on the surface of the capacitor electrode. However, in order to prevent the deposits from adhering to this method, the surface temperature must be about 120 ° C to 130 ° C. The surface of the capacitor electrode must be heated. The commercially available capacitor vacuum gauge has a heating allowable temperature. It is in the range of tens of aC (50 ° C to 80 ° C), and it cannot withstand high temperatures exceeding 1000 ° C, so it cannot be used practically. In contrast, in the specific heat detection section 10 of the semiconductor manufacturing apparatus 1 according to the first embodiment of the present invention, the specific heat detection sensor has a Pirani vacuum gauge 1 0 P and a tungsten wire 12 at, for example, approximately 1 40 ° C. The temperature heating can prevent the deposition of deposits. In addition, the tungsten wire 12 is made of platinum (P t) with high corrosion resistance, which can prevent the paper size of corrosive gases from applying Chinese national standards (CNS ) A4 size (210x297 mm) ---: ------------ install · ------ order ----- I-- (Please read the precautions on the back first (Fill in this page again.) Consumption Cooperation by Employees of Intellectual Property Bureau of the Ministry of Economic Affairs -23- A7 ___B7_____ V. Invention Description P) Corrosion. In addition, using a Pirani vacuum gauge with a high-speed response of 1 second or less and a pressure measurement of 0 · 133Pa to 133000Pa 10P can perform accurate and stable specific heat measurement, and as a result, it can be performed accurately and stably. Pressure measurement. In the specific heat detection unit 10 of the semiconductor manufacturing apparatus 1 according to the first embodiment of the present invention, as described above, a tungsten wire 12 of a Pirani vacuum gauge 10 P uses a high level of P t or the like. Corrosion-resistant materials, and because deposits do not adhere to the surface of the capacitor electrode of a capacitance vacuum gauge, it is not necessary to isolate the Pirani vacuum gauge 10 of the specific heat detection unit 10 when it is open to the atmosphere. Compared with the capacitance vacuum gauge, the specific heat detection unit 10 is easier to handle, and the manufacturing cost of the semiconductor manufacturing device 1 can be made cheaper. Furthermore, the reproducibility and reliability of the pressure measurement can be improved. The semiconductor manufacturing apparatus 1 according to the first embodiment of the present invention includes a plurality of vacuum gauges, that is, a specific heat detection unit 10 and a pressure detection unit 20, in a substrate processing method and a semiconductor device manufacturing method, and can simultaneously monitor different Because of the physical quantity, the accuracy of pressure measurement can be further improved. For example, as shown in FIG. 5 to be described later, in the case of using a 02 gas as the processing gas, the pressure measurement of the Pirani vacuum gauge and the capacitance vacuum gauge is increased by 2 before and after the plasma generation (before and after the discharge is started). Times, but in the case of C 4 F 8 gas, the pressure measurement of the capacitance vacuum gauge will rise by a thousand degrees before and after the plasma generation. The pressure measurement of the Pirani vacuum gauge will be before and after the plasma generation. , A reduction of 67%. Therefore, the use of mixed gas and monitoring of the reaction gas and the information of the complex processing gas are used to detect the corrosion. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm>). < Please read the precautions on the back before filling in this page) -Install -------- Order -------- * Line — Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics-24- 45 ^ 862 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. At the end of the invention description (22), the specific heat detection unit 10 and the pressure detection unit 20 are used to monitor the pressure measurement obtained by both parties. When necessary, by comparing and reviewing the pressure measurement of both sides, accurate and stable etching control can be performed. In fact, although monitoring a lot depends on experience, by comparing the pressure measurement before and after the plasma is generated, it can be easily implemented by trying to understand various phenomena. For example, in the dry etching process, the most suitable processing condition parameters such as the degree of vacuum, the supply flow of the processing gas, the high-frequency power, the temperature of the semiconductor wafer 8 (substrate temperature), and the temperature inside the processing chamber 2 can be derived. Furthermore, even if the process condition parameters are made constant, the dry etching process may be performed stably. The reasons include, for example, changes in the amount of high-frequency power supply in the processing chamber 2, changes in the bias voltage excited by the high-frequency power, and bias in the plasma generation state caused by abnormalities in the components in the processing chamber 2. Wait. This phenomenon occurs before and after the components inside the processing chamber 2 are repaired and replaced, and occurs after a long period of time. In the semiconductor manufacturing apparatus 1 according to the first embodiment of the present invention, information such as pressure measurement of dry etching treatment in a stable state is obtained in advance in a substrate processing method and a manufacturing method of a semiconductor device. You can monitor the dry etching process and take appropriate measures when the dry etching process becomes unstable. For example, in a processing chamber 2 made of an aluminum alloy having a chromate film coated on its surface, the chromate film is peeled off, and once the underlying aluminum alloy becomes exposed, the aluminum alloy is etched and processed. The pressure measurement in chamber 2 will not change. In this case, when the pressure measurement inside the processing chamber 2 changes abnormally, the dry etching process can be stopped and the paper size of the processing chamber can be adapted to the national standard (CNS) A4 (210 X 297 public love) (Please read first Note on the back, please fill in this page again) Packing ------ I — Order --- — — — --- -25- Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economy 5 ^ 8β2 Α7 ___ Β7 ___ V. Description of the invention ι? 3) 2 appropriate measures such as internal repair. Furthermore, in the first embodiment of the present invention, although the dry etching process (the same will be described later), the fixed pressure regulating valve 4 B is used, and the time point at which the pressure measurement changes is used as the end point of the dry etching process. Explanation | However, the semiconductor manufacturing apparatus 1 of the present invention may include a method of making the pressure of the gas atmosphere inside the processing chamber 2 constant, and performing a dry etching process with the pressure regulating valve 4 B_ to adjust the pressure. Such control of the pressure regulating valve 4 B can be easily implemented by measuring the pressure, and according to the measurement result, making the pressure constant to operate the pressure regulating valve 4 B. In addition, in order to keep the pressure of the gas atmosphere inside the processing chamber 2 constant, a control signal for operating the pressure regulating valve 4 B is output. If the expression is changed, it is equivalent to etching that indicates the pressure change of the gas atmosphere inside the processing chamber 2. For the end point, the above control signal can be used as an etching end point signal. Second Embodiment A second embodiment of the present invention describes a processing method of a semiconductor manufacturing apparatus, which is most suitable for the interior processing method. [Basic principle of logic processing method] It is related to the semiconductor manufacturing apparatus 1, the substrate processing method, and the semiconductor device manufacturing method of the first embodiment of the present invention described above. The plasma is generated in the gas atmosphere inside the processing chamber 2 by the plasma. The specific heat change and pressure change before and after can determine the following matters. Figure 5 shows that before and after the generation of the plasma, a Pirani vacuum gauge was included. 10 This paper is sized for the Chinese National Standard (CNS) A4 (210 * 297 mm). I--IIII (Please read the precautions on the back before filling in this page) • 26- 5 ^ 86 2 A7 B7 V. Description of the invention p) The specific heat measurement section 10 measures the pressure measurement of each gas. And the pressure measurement of each gas is measured by the pressure detection section 20 including the capacitance vacuum gauge. That is, Fig. 5 shows the pressure measurement before and after the plasma generation of each of the processing gases used for etching gas, carrier gas, such as 02, N2, Ar, CO, CHF3, CF4, and C4F8. Capacitive vacuum gauges can, in principle, perform pressure detection closer to absolute pressure than Pirani vacuum gauges. It can be considered that there is less variation in the pressure measurement due to discharge (plasma generation). In fact, if there is a gas with a greatly changed composition before and after the discharge, such as 0 2 gas, it can be understood that the discharge will affect the pressure measurement. The effect of this discharge is a problem with the vacuum gauge itself, or something other than a vacuum gauge? At present, if it is not possible, if it is a possibility other than a vacuum gauge, it can be presumed as follows: that is, the case where the atmosphere inside the processing chamber 2 is 0 2 gas, that is, in the case of dry drying, the capacitor vacuum is discharged after discharge. Although the pressure measurement was increased from 5.IPa to 9.9Pa, the evaluation of this rising phenomenon * can be presumed to be a deposition film (CFX) attached to the inner wall of the processing chamber 2, and the deposit is etched by 〇2 discharge, The pressure inside the processing chamber 2 rises. This phenomenon can be solved by the following reaction formula < 2 > It can be inferred that an increase in the number of molecules is related to an increase in pressure. In addition, it is presumed that the reaction from 0 to 20 is small. CFx (solid) + 〇2— CO + xF + O < 2 > In the case of C H F 3, at the same time as the discharge started, C F X was deposited on the inner wall of the processing chamber 2. Otherwise, the number of molecules is reduced, and it can be inferred that the paper size applies the Chinese national standard < CNS) A4 size (210 X 297 mm) (Please read the precautions on the back before filling out this page) Installation -------- Order--! ιί -line Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -27- < A7 _ B7 V. Description of the invention e) Reduced strength measurement. (Please read the precautions on the back before filling in this page.) As shown in Figure 5, even if the pressure of the gas atmosphere inside the same processing chamber 2 is measured, the pressure measurement is different from the specific heat detection unit 1 〇 The reason why the Pirani vacuum gauge 1 0 P is physically different from the capacitance vacuum measuring object of the pressure detecting unit 20 is. [Structure of Semiconductor Manufacturing Device] Next, a semiconductor manufacturing device according to the second embodiment of the present invention will be described. The semiconductor manufacturing device 1 shown in FIG. The manufacturing apparatus 1 is the same, and is a dry etching apparatus that performs dry etching processing on the semiconductor wafer 8 that processes a substrate. That is, this semiconductor manufacturing apparatus 1 includes at least a processing chamber 2 including a semiconductor wafer 8 on which a processing substrate can be placed, and a processing gas supply unit 3 that supplies a processing gas to the inside of the processing chamber 2; and is connected to the processing chamber. 2 Internal vacuum exhaust device 4: The specific heat detection unit 10 for detecting the specific heat of the specific heat of the processing gas inside the processing chamber 2 is different from the semiconductor manufacturing device 1 of the first embodiment of the present invention in that it does not have The pressure detection unit 20 detects the pressure inside the processing chamber 2. The processing gas supply unit 3 includes a supply unit for supplying a processing gas (processing gas) for dry processing, in addition to a processing gas (for example, a mixed gas of CHF3 and C ◦) used in the dry etching process. . As the processing gas, for example, a 02 gas can be used practically. The processing gas used for this drying treatment is the same as the specific heat detection unit 10 of the first embodiment of the present invention, and the Chinese paper standard (CNS) A4 is applied to the paper size including the high-speed response speed of 1 second or less (210 x 297 mm) " 28-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 452862 A7 _ B7 —-V. Description of the invention (? 6) Pirani vacuum gauge 10 P specific heat detection unit 1 〇, Changes in pressure (specific heat) were detected. The other structures of the semiconductor manufacturing apparatus 1 are the same as those of the semiconductor manufacturing apparatus 1 according to the first embodiment of the present invention. [Processing Process] Next, a process for processing the semiconductor manufacturing apparatus 1, that is, the dry etching apparatus will be described with reference to FIG. 6. In addition, the processing is usually included in the manufacturing process of the semiconductor device. That is, after the etching process is performed a plurality of times, the processing is performed. The processing described here corresponds to one specific example of the "substrate processing method" and "the manufacturing method of a semiconductor device" of the present invention. (1) First, a specific semiconductor wafer 8 selected from 500 semiconductor wafers 8 that have been subjected to dry etching processing is carried into the processing chamber 2 of the semiconductor manufacturing apparatus 1 and the semiconductor wafer 8 is placed Hold on electrode 5 A. (2) The processing gas supply unit 3 supplies the 02 gas of the processing gas to the inside of the processing chamber 2 and measures the pressure of the gas atmosphere inside the processing chamber 2 with the specific heat detection gas 10. As a result of this measurement, the pressure was 3.5 P a. (3) Next, the counter electrode 5A is supplied with a high-frequency power of 4.9 W / cm2 from the high-frequency power supply 5, and a plasma is generated in the processing chamber 2 to start the processing. The pressure of the gas atmosphere in the plasma state measured by the specific heat detection unit 10 was 7.7 P a. (4) After the pressure inside the processing chamber 2 is gradually reduced as the processing progresses, using the measurement result of the specific heat detection section 10, after about 3 minutes, the pressure of the gas atmosphere inside the processing chamber 2 and the processing At the beginning, the paper size is applicable to China National Standard (CNS) A4 < 2〗 0 X 297 mm) r τ I -------- install------ 1 order ------- 1 · line · 靖 Jingxian read the phonetic on the back? Please fill in this page again for the matter> -29- Consumption cooperation by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed A7 B7 Five 'Invention Note ¢ 7) The pressure is equal to 3.5P a. In this state, the inside of the processing chamber 2 is opened to the atmosphere. ‘The deposits on the inner wall of the processing chamber 2 are cleanly removed and processed.
終了 名V \. η 圖d中，左側之橫軸係顯示處理室2內部之壓力量測 ig ’右側I#軸係顯示利用分光器6 B以及光傳感器6 C 量測之C 〇之發光強度，橫軸係顯示淸理處理時間.曲線 a係顯示處理室2內部之壓力量測値與淸理處理時間之關 係’曲線b係顯示c 0之發光強度與淸理處理時間之關係 〇 量測C 0之發光強度以控制淸理處理之情形，如曲線 b所示般地，約2分鐘程度，C0之發光強度（波長 3 1 3 nm附近之強度）減少之變動點存在之故，設此變 動點之附近，即淸理處理開始約經過2分鐘之時間點爲淸 理處理之終點。但是，利用比熱檢測部1 〇之皮拉尼真空 計1 0 p之壓力量測（比熱量測）之結果，判明淸理處理 開始約3分鐘後之與淸理處理開始之壓力成爲相等之時間 點成爲淸理處理之終點。即，依據C 0之發光強度之量測 ’進行淸理處理之情形，可以獲得淸理處理不足之結果s 如此’於淸理處理中，藉由利用比熱檢測部1 〇之皮 拉尼真空計1 Ο P，量測處理室2內部之淸理氣體之比熱 ’將此比熱之量測結果換算爲壓力，檢測淸理處理之終點 ，以進行1次之淸理處理，可以乾淨去除處理室2之內壁 之堆積物》可以防止因堆積物之剝落等所導致之粒子之發 生。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---!----------裝 ----!| 訂-----I---線， (請先閱讀背面之注意事項再填寫本頁) -30- 經濟部智慧財產局員工消費合作社印製 5 咏 2 A7 B7 五、發明說明f8 ) 例如，半導體製造裝置1之石英窗6 A因反應生成物 等一變朦朧，藉由發光之蝕刻之終點檢測變困難之故，以 某——定頻度例如每1 0 0片之半導體晶圓8之蝕刻，進 行乾淸理處理，但是，在本發明之第2實施形態之淸理處 理方法中，在每超過1 0 0片之半導體晶圓8，以1次之 比例施行乾淸理處理即可。又，每4次之乾淸理處理，即 每5 0 0片之半導體晶圓8之蝕刻，藉由開放於大氣之溼 淸理處理雖有必要，但是，在本發明之第2實施形態之淸 理處理方法中，不須每1 0 0片之乾淸理處理，只要進行 溼淸理處理即可。 其它之實施形態 以上，雖然利用上述複數之實施形態說明本發明，但 是，本發明並不限定於上述實施形態。例如，也可以適用 於具有電漿C VD裝置、熱C VD裝置、濺鍍成膜裝置等 之處理室之半導體製造裝置，使用該半導體製造裝置之基 板處理方法及半導體裝置之製造方法。 再者，本發明並不限定於半導體晶圓8，也可以適用 於進行石英透明玻璃基板或絕緣基板，或樹脂基板之處理 之半導體製造裝置，使用該半導體製造裝置之基板處理方 法及半導體裝置之製造方法。 上述本發明之第1實施形態係將乾蝕刻處理之壓力變 動當成比熱變動以皮拉尼真空計1 0 P加以量測，本發明 之第2實施形態係將乾淸理處理之壓力變動當成比熱變動 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 袭-----I--訂· — —--線- -31 - 4^2862 ^ A7 B? 五、發明說明p ) (請先閱讀背面之江意事項再填寫本頁) 以皮拉尼真空計1 0 P加以量測，依據此量測結果檢測處 理終點。半導體製造製程，特別是敢蝕刻處理中，在設定 爲同一之處理條件參數之際，獲得同一之壓力量測値，再 者，伴隨長時間變化，在設定爲同一條件參數之際，獲得 同一之壓力量測値都比絕對壓力之量測値重要。在長時間 變化上，如各各之蝕刻處理般地，由數秒至數分之短範圍 者，·至如溼蝕刻處理般地，由數日至數週間之長範圍，各 有不同。本發明在設定爲此種相同之處理條件參數之際， 可以獲得同一之壓力量測値，在再現性特別重要之情形有 效。 如以上說明般地，本發明可以提供提升蝕刻處理、淸 理處理等之處理精度之半導體製造裝置，基板處理方法及 半導體裝置之製造方法。特別是，本發明可以提供可以提 升蝕刻處理之終點檢測精度之半導體製造裝置，基板處理 方法及半導體裝置之製造方法。 經濟部智慧財產局員工消費合作社印製 再者，本發明可以提供可以提升稼動效率之半導體製 造裝置，基板處理方法及半導體裝置之製造方法。特別是 ，本發明可以提供縮短淸理處理時間，提升處理全體之稼 動效率之半導體製造裝置，基板處理方法及半導體裝置之 製造方法。又，特別是本發明可以提供縮短量測處理室內 部之狀態爲止所需要之時間*提升處理全體之稼動效率之 半導體製造裝置，基板處理方法及半導體裝置之製造方法 〇 再者，本發明可以提供可以提升製造上之產出量之半 本紙張尺度適用中國國家標準（CNS)A4規格（210 X297公t ) 經濟部智慧財產局員工消費合作社印製 4528β2 Α7 ---- B7 五、發明說明) 導體製造裝置，基板處理方法及半導體裝置之製造方法。 再者’本發明在在半導體製造裝置具備：包含具有高 速響應速度而且具有廣範圍之量測範圍之皮拉尼真空計之 比熱檢測部之故，可以簡便、迅速而且正確量測處理室內 部之壓力，可以簡便、迅速而且正確檢測處理終點。基板 處理方法及半導體裝置之製造方法也相同。 【圖面之簡單說明】 圖1係本發明之第1實施形態之半導體製造裝置（乾 蝕刻裝置）之槪略構成圖。 圖2係本發明之第1以及第2實施形態之半導體製造 裝置之比熱檢測部（皮拉尼真空計）之原理圖。 圖3係本發明之第1實施形態之乾蝕刻處理之流程圖 〇 圖4係顯示本發明之第1實施形態之半導體製造裝置 之處理室內部之壓力與處理時間經過之關係特性圖。 圖5係顯示本發明之第2實施形態之電漿之產生前後 之比熱檢測部（皮拉尼真空）以及壓力檢測部（電容真空 計）之壓力量測値之變化特性圖。 圖6係本發明之第2實施形態之半導體製造裝置（乾 蝕刻裝置）之槪略構成圖。 圖7係顯示本發明之第2實施形態之處理室內部之壓 力量測値，及C 0之發光強度之處理時間依存性之特性圖 本紙張尺度適用中國國家標準（CNS)A4規格（2〗0 X 297公g ) , r -----------I--訂·------!^- ^ ------Γ.--1;_____；_____ (請先間讀背面之注意事項再填寫本頁) -33 - 4 5286 2 A7 _B7_ 五、發明說明（31 ) 圖8係本發明之習知技術之乾蝕刻裝置之槪略構成圖 經濟部智慧財產局員工消費合作杜印製 主要元件對照表 10 比熱檢測部 1 0 P 皮拉尼真空計 1 2 鎢絲 2 0 壓力檢測部 100 乾蝕刻裝置 10 1 真空室 10 2 排氣系統 103 氣體導入口 10 4 壓力計 10 5 石英窗 10 6 電極 107 高頻電源 10 8 分光器 10 9 光傳感器 110 半導體晶圓 -----------； '裝--------訂---------線-, (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規袼（210 X 297公釐） -34-The final name V \. Η In Figure d, the horizontal axis on the left shows the pressure measurement inside the processing chamber 2 ig 'The right I # axis shows the luminous intensity of C 〇 measured by the spectroscope 6 B and the optical sensor 6 C The horizontal axis shows the processing time. The curve a shows the relationship between the pressure measurement inside the processing chamber 2 and the processing time. The curve b shows the relationship between the luminous intensity of c 0 and the processing time. The luminous intensity of C 0 is used to control the processing. As shown in the curve b, about 2 minutes, there is a change point where the luminous intensity of C 0 (intensity near the wavelength of 3 1 3 nm) decreases. The point near the change point, that is, the time point at which the processing is started for about 2 minutes, is the end of the processing. However, from the pressure measurement (specific heat measurement) of the Pirani vacuum gauge 10 p of the specific heat detection unit 10, it was determined that the time when the pressure was equal to the pressure at which the heat treatment was started approximately 3 minutes after the heat treatment was started. The point becomes the end of the logical processing. That is, in the case of performing the processing according to the measurement of the luminous intensity of C 0, the result of insufficient processing can be obtained. Thus, in the processing, by using a Pirani vacuum gauge of the specific heat detection section 10 1 Ο P, measure the specific heat of the processing gas inside the processing chamber 2 'Convert the measurement result of this specific heat into pressure, detect the end of the processing, and perform a secondary processing, which can clean the processing chamber 2 The deposits on the inner wall can prevent the occurrence of particles caused by the peeling of the deposits. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) ---! ---------- installation ----! | Order ----- I --- (Please read the precautions on the back before filling out this page) -30- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5 Yong 2 A7 B7 V. Invention Description f8) For example, the quartz window 6 of the semiconductor manufacturing device 1 A Because the reaction products and the like become dim, it is difficult to detect the end point of the luminous etching, and the dry etching process is performed at a certain frequency, for example, every 100 wafers of the semiconductor wafer 8, but, In the processing method of the second embodiment of the present invention, the drying processing may be performed at a rate of once for every semiconductor wafer 8 exceeding 100 pieces. It is necessary to dry the wafer every 4 times, that is, to etch the semiconductor wafer 8 every 500 wafers. It is necessary to carry out the wet curing process exposed to the atmosphere. However, in the second embodiment of the present invention, In the treatment method, it is not necessary to perform a dry treatment every 100 pieces, but only a wet treatment. Other Embodiments Although the present invention has been described using the above-mentioned plural embodiments, the present invention is not limited to the above-mentioned embodiments. For example, it can also be applied to a semiconductor manufacturing device having a processing chamber such as a plasma C VD device, a thermal C VD device, a sputtering film forming device, and the like, and a substrate processing method and a semiconductor device manufacturing method using the semiconductor manufacturing device. Furthermore, the present invention is not limited to the semiconductor wafer 8 and can also be applied to a semiconductor manufacturing apparatus for processing a quartz transparent glass substrate, an insulating substrate, or a resin substrate, a substrate processing method using the semiconductor manufacturing apparatus, and a semiconductor device. Production method. The first embodiment of the present invention described above uses the pressure variation of the dry etching process as the specific heat variation and measures it with a Pirani vacuum meter 10 P. The second embodiment of the present invention uses the pressure variation of the dry processing process as the specific heat. Changes to this paper size apply Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) -31-4 ^ 2862 ^ A7 B? V. Description of the invention p) (Please read the Jiang Yi matters on the back before filling out this page) Measure with a Pirani vacuum gauge 1 0 P, and detect and process based on the measurement results end. In the semiconductor manufacturing process, especially in the dare-etching process, the same pressure measurement is obtained when the same process condition parameters are set, and the same is obtained when the same condition parameters are set with long-term changes. Pressure measurement is more important than absolute pressure measurement. The long-term change varies from the short range of several seconds to several minutes, as in the case of each etching process, and the long range of several days to several weeks, like the wet etching process. When the present invention is set to such the same processing condition parameter, the same pressure measurement can be obtained, which is effective in a case where reproducibility is particularly important. As described above, the present invention can provide a semiconductor manufacturing apparatus, a substrate processing method, and a manufacturing method of a semiconductor device that improve processing accuracy such as an etching process and a processing process. In particular, the present invention can provide a semiconductor manufacturing apparatus, a substrate processing method, and a manufacturing method of a semiconductor device that can improve the accuracy of endpoint detection of an etching process. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Furthermore, the present invention can provide a semiconductor manufacturing device, a substrate processing method, and a semiconductor device manufacturing method that can improve productivity. In particular, the present invention can provide a semiconductor manufacturing apparatus, a substrate processing method, and a semiconductor device manufacturing method that shorten the processing time and improve the overall processing efficiency. In particular, the present invention can provide a semiconductor manufacturing apparatus, a substrate processing method, and a semiconductor device manufacturing method that can shorten the time required to measure the state of the interior of the processing chamber * and improve the processing efficiency of the entire process. Furthermore, the present invention can provide The paper size that can increase half of the output in manufacturing is applicable to the Chinese National Standard (CNS) A4 specification (210 X297gt) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy 4528β2 Α7 ---- B7 V. Description of the invention) Conductor manufacturing apparatus, substrate processing method, and semiconductor device manufacturing method. Furthermore, the present invention includes a specific heat detection section of a Pirani vacuum gauge having a high-speed response speed and a wide measurement range in a semiconductor manufacturing apparatus, which makes it possible to easily, quickly and accurately measure the temperature inside a processing chamber. Pressure can be easily, quickly and correctly detected at the end of processing. The same applies to the substrate processing method and the semiconductor device manufacturing method. [Brief description of the drawings] FIG. 1 is a schematic configuration diagram of a semiconductor manufacturing apparatus (dry etching apparatus) according to a first embodiment of the present invention. Fig. 2 is a schematic diagram of a specific heat detection section (Pirani vacuum gauge) of the semiconductor manufacturing apparatus according to the first and second embodiments of the present invention. Fig. 3 is a flowchart of a dry etching process according to the first embodiment of the present invention. Fig. 4 is a characteristic diagram showing the relationship between the pressure inside the processing chamber of the semiconductor manufacturing apparatus according to the first embodiment of the present invention and the elapse of processing time. Fig. 5 is a graph showing changes in specific pressure measurement units (pirani vacuum) and pressure measurement units (capacitive vacuum gauges) of the plasma measurement before and after the generation of the plasma according to the second embodiment of the present invention. Fig. 6 is a schematic configuration diagram of a semiconductor manufacturing apparatus (dry etching apparatus) according to a second embodiment of the present invention. FIG. 7 is a characteristic diagram showing the pressure measurement pressure inside the processing chamber according to the second embodiment of the present invention and the processing time dependence of the luminous intensity of C 0. The paper dimensions are applicable to the Chinese National Standard (CNS) A4 specification (2) 0 X 297g g), r ----------- I--order · ------! ^-^ ------ Γ .-- 1; _____; _____ ( Please read the precautions on the back before filling this page) -33-4 5286 2 A7 _B7_ V. Description of the Invention (31) Figure 8 is a schematic diagram of the dry etching device of the conventional technology of the present invention. Bureau ’s consumer cooperation Du printed main component comparison table 10 Specific heat detection section 1 0 P Pirani vacuum gauge 1 2 Tungsten wire 2 0 Pressure detection section 100 Dry etching device 10 1 Vacuum chamber 10 2 Exhaust system 103 Gas inlet 10 4 pressure gauge 10 5 quartz window 10 6 electrode 107 high-frequency power supply 10 8 spectroscope 10 9 light sensor 110 semiconductor wafer ----------- -------- Line-, (Please read the precautions on the back before filling out this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -34-