TW452527B - Apparatus for moving a workpiece - Google Patents

Apparatus for moving a workpiece Download PDF

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Publication number
TW452527B
TW452527B TW89116170A TW89116170A TW452527B TW 452527 B TW452527 B TW 452527B TW 89116170 A TW89116170 A TW 89116170A TW 89116170 A TW89116170 A TW 89116170A TW 452527 B TW452527 B TW 452527B
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Taiwan
Prior art keywords
workpiece
fluid
base
patent application
track
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TW89116170A
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Chinese (zh)
Inventor
Anco S Blazev
Wayne L Irwin
Mary A Reker
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Speedfam Ipec Corp
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Publication of TW452527B publication Critical patent/TW452527B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715Changing the direction of the conveying path
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67718Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67784Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Spray Control Apparatus (AREA)

Abstract

An improved fluid track for transporting a workpiece is disclosed. The fluid track includes a base having apertures formed therein and rails to guide the workpiece to a desired location. The track is designed such that flows through the apertures suspends the workpiece above the base of the track. The workpiece is urged in a desired or predetermined direction by applying a fluid (e.g., through a nozzle) to a surface of the workpiece.

Description

452527 t452527 t

五、發明說明(1) 發明領4 本發明一般係關於工件運動裝置。更具敢言之, 明係關於一種執道,使用流體懸浮和導引工件二一位置到 發明背景 流艘或水轨可用於各種用途,把各種工件從一個位置 送到另一個位置,例如,半導體晶圓拋光機(例如化學機 械式拋光CMP機)上可採用水執,把晶圓從—處理站送到工 具内另一站,或在木同工具的處理站間運送。 典型的CMP機包含至少一椒光站’以及装料和卸料站 。CMP機亦可包含另外的後拋光站,以例如對晶圓清洗、 淋洗和乾燥。 ^ CMP機上的水軌典型上用來運送晶圓,從靠近後拋光 保留位置或索引抬’至隨後處理抬。尤其是水執可用來輪 送晶圓至後撤光洗淨和淋洗站》使用水軌來輸送晶圓有益 ’因為在輸送過程中可保持晶圓濶濕。輪送至後拋光過程 之際保持晶圓潤濕有益,因為可防止殘肩,諸如拋光過程 所用漿液,或其他顆粒,在晶圓表面乾燥時粘附在表面。 易言之,軌道可容許晶圓保濕,直到晶圓暴露於清洗和淋 洗過程’從晶圓表面除去殘屑。此外,水執可用來取代機 器人或其他機拜’把晶圓從一處送到他處。減少機器處理 晶圓’有減少晶圓因機械輸送而損壞或破裂的傾向。 如詳後所述,f案技藝的水軌需要實質量的水(例如 在約2900 cm2的表面積每分鐘要約21公升,或約0.007V. Description of the Invention (1) Invention 4 The present invention relates generally to a workpiece moving device. More dare to say, the Ming is about a way of using fluid to suspend and guide the two positions of the workpiece to the background of the invention. The flow boat or water rail can be used for various purposes, and various workpieces can be sent from one position to another. For example, Semiconductor wafer polishing machines (such as chemical mechanical polishing CMP machines) can use water to carry wafers from the processing station to another station in the tool, or between the processing stations of the same tool. A typical CMP machine includes at least one pepper light station ' and a loading and unloading station. The CMP machine may also include additional post-polishing stations, such as wafer cleaning, rinsing, and drying. ^ The water rail on the CMP machine is typically used to transport wafers from the reserve position or index lift near the post-polishing lift to the subsequent process lift. In particular, water can be used to rotate wafers to retreat light washing and rinsing stations. Using water rails to transport wafers is beneficial because the wafers can be kept wet during transport. It is beneficial to keep the wafer wet during the rotation to the post-polishing process, as it prevents residual shoulders, such as the slurry used in the polishing process, or other particles from sticking to the surface when the wafer surface is dry. In other words, the track allows the wafer to be moisturized until the wafer is exposed to the cleaning and rinsing process' to remove debris from the wafer surface. In addition, water can be used to replace robots or other robots' to send wafers from one place to another. Reduced Machine Handling Wafers' have a reduced tendency to damage or crack wafers due to mechanical transport. As will be described in detail later, the water rail of the case technology requires solid water (for example, about 21 liters per minute at a surface area of about 2900 cm2, or about 0.007

第4頁 4525 27 五、發明說明(2) l/cm2/min),才能保持晶園漂浮,向下游移動。往往水軌 需要水壓的上限,要有設備來供應使軌道可發揮所需結 果’設備供水系統内外波動可能造成設備供水的混亂,對 水軌績效會有致命的影响》再者,轨道的耗水量彩响軌道 操作成本’從而影响晶圓處理成本,即軌道耗費更多的水 ’晶圓就更貴。因此,改進水軌最好在預定表面積上運動 晶圓,需水量要低於約0.0 07 l/cm2/mine 典型的水軌包含溝道或管道,有構成存水的基部和側 部;從基部向上延伸的軌條’引導晶圓沿軌道行進:以及 形成於基部内之通孔等供水裝置,供水至軌道。通孔在管 道内供應流動的水流,使晶圓按水流方向移動。 。雖然 ’但基 理不規 能保持 凹部和 各 導引晶 間的間 固定附 晶圓提 各種尺 徑較對 道基部一般含有凹 凹部和 部上或 則。結 晶圓漂 /或凸 前案技 圓沿轨 隔一般 設軌條 供堅定 寸的晶 立轨條 /或凸部有 内有凹部和 果,在溝道 浮在基部的 部之改進水 藝的軌道典 移動。軌條 比通過軌道 的水轨較易 支持,但固 圓。例如, 間的距離更 部和/或凸部,沿軌道長度延伸 助於保持晶圓漂浮,沿溝道行進 /或凸部存在,產生管道内的物 内需有額外的水或其他流體,才 最高面積上方。因此,需有減少 軌。 塑上包含二對立設置的軌條,以 固定附設於管道的基部,而軌條 處理的晶圓直徑稍大。雖然含有 製造,且在晶圓沿軌運動時,對 定附設軌條不方便使用單軌輸送 固定執條的軌道不能用來處理直 大的晶圓*而軌條間之距離較晶Page 4 4525 27 V. Description of the invention (2) l / cm2 / min), in order to keep the crystal garden floating and moving downstream. Water rails often require an upper limit on water pressure, and equipment must be provided to enable the rails to achieve the desired results. 'Internal and external fluctuations in the equipment water supply system may cause confusion in the equipment water supply, which will have a fatal impact on the performance of the water rail.' Furthermore, the consumption of the rails The amount of water affects the operation cost of the track, which affects the cost of wafer processing. That is, the track consumes more water. The wafer is more expensive. Therefore, it is better to improve the water rail to move the wafer over a predetermined surface area, and the water demand is less than about 0.0 07 l / cm2 / mine. A typical water rail includes a channel or a pipe, and has a base and a side that constitute the water storage; from the base An upwardly extending rail guides the wafer along the rail: and water supply devices such as through holes formed in the base supply water to the rail. The through hole supplies a flowing water flow in the pipe, so that the wafer moves in the direction of the water flow. . Although ′, the basic structure is irregular, and it can maintain the space between the concave part and each of the guide crystals. Attach wafers with various sizes. Crystal bleaching and / or convex front technology rounds are generally provided with rails along the rails for crystal inch rails and / or convex parts with recesses and fruits inside, which improve the watercraft track at the bottom of the channel. Code mobile. Rails are easier to support than water rails that pass through the rails, but are solid. For example, the distance between the part and the convex part is extended along the length of the track to help keep the wafer floating, and it exists along the channel, or the convex part exists, which requires extra water or other fluids in the pipeline. Above the area. Therefore, there is a need to reduce rails. The plastic includes two oppositely arranged rails to be fixedly attached to the base of the pipe, and the wafer processed by the rails has a slightly larger diameter. Although it contains manufacturing, and when the wafer is moving along the rail, it is inconvenient to use a single rail to transport the fixed rails. The fixed rails cannot be used to handle large wafers. * The distance between the rails is relatively small.

第5頁 452527 發明說明(3) 圓直徑太大時,晶圓在輸送時碰到軌條,會增加軌 損。另外,若對立軌條間的距離遠較必要為大,軌道 不必要的昂貴,佔有超出必要的空間。因此,亟 理各種尺寸晶圓的改進水軌。 執道基部内形成的通孔,一般是相對於基部平面呈 90*以外的角度鑽洞貫穿基部所形成β通孔往往形成使水 以部份朝上的方向和部份按晶圓所需運動的方向流出通孔 。引導流出水朝上並沿晶圓所需運動方向,喷水器提供管 道内的水流以預定方向流動;流出水朝上方向提供支持, 使晶圓不會在流體流内下沉(半導體晶圓一般在水内不浮) »在基部内很困難形成與表面不垂直的通孔。此外,典型 的水軌每平方叶的基部(軌條之間)含有約〇 6至0.9個3¾¾ ,提供管道内有充分的水運動。形成的各通孔會增加與軌 道相關的製造成本。因此,亟需具有較容易和廉價製造的 供水裝置之改進水軌。 除基板形成的通孔外,可用側面喷水器協助晶圓按所 需方向運動。側面喷水器典型上安裝在執道上,使喷水器 出水會碰到晶圓邊緣,而水一般是按晶圓所需運動方向朝 晶圓引導。雖然側面喷水器可有效在所需方向運動晶圓或 逼使晶圓運動,但喷水器則效果較遜。部份是由於側面喷 水器效果不彰,因為晶圓承受水的斷面積較小(晶圓厚度 通常小於約1 mm)。結果,引向晶圓邊緣的大部份水不是向 上或向下偏,就是水完全落空晶圓邊緣。因此,亟需有更 有效機制逼使晶圓沿所需方向之改進水軌。Page 5 452527 Description of the invention (3) When the diameter of the circle is too large, the wafer encounters the rails during transportation, which will increase the rail loss. In addition, if the distance between the opposite rails is much larger than necessary, the rails are unnecessarily expensive and occupy more space than necessary. Therefore, improved water rails for wafers of various sizes are urgently needed. The through-holes formed in the base are generally drilled through the base at an angle other than 90 * relative to the plane of the base. Β-through-holes are often formed so that the water moves partly in the upward direction and the part moves according to the needs of the wafer. Flow out of the through hole. The outflow water is directed upward and along the desired movement direction of the wafer. The water sprayer provides the water flow in the pipe in a predetermined direction; the outflow water provides support in the upward direction so that the wafer does not sink in the fluid flow (semiconductor wafer) Generally do not float in water) »It is difficult to form through holes in the base that are not perpendicular to the surface. In addition, the base of a typical water rail (between the rails) contains about 06 to 0.9 3¾¾, providing sufficient water movement in the pipe. The formed through holes increase the manufacturing costs associated with the track. Therefore, there is a great need for improved water rails with water supply devices that are easier and cheaper to manufacture. In addition to the through holes formed by the substrate, a side sprayer can be used to assist the wafer in the desired direction. The side water sprayer is typically installed on the channel, so that the water from the water sprayer will touch the edge of the wafer, and the water is generally guided toward the wafer according to the desired movement direction of the wafer. Although side sprayers are effective at moving wafers in the desired direction or forcing them to move, sprayers are less effective. This is partly due to the poor performance of the side sprayers, as the cross-sectional area of the wafer withstanding water is small (wafer thickness is usually less than about 1 mm). As a result, most of the water leading to the edge of the wafer is either deflected up or down, or the water completely falls off the edge of the wafer. Therefore, there is an urgent need for more effective mechanisms to force wafers to improve water rails in the desired direction.

^52527 五、發明說明(4) 發明概述 本發明提供改進裝置’供工件按所需方向運 走向。具體而言,本發明提供改進流體執道,使 水軌更少的流體來運動工件。 用 本發明針對如今所知水軌或流體軌道的缺點 式,詳述如下<•然而,一般而言,改進流體軌道包 形成的溝道,以及基部附’設的導件。基部包含通= 成是把流體按工件方向排入溝道内,使工件懸浮在 部上方》 … 按照本發明具禮例,流想軌道含有實質上平扭 基部》按照此具體例又一要旨,基部所含通孔的& 上垂直於平坦表面。按照此具體例又一要旨,基部 每底部表面積含有約6個通孔》 按照本發明再一具體例’流體轨道含有喷水器 弓丨向工件頂面’並沿工件所需運動方向,逼晶圓按 向運動。 按照本發明進一步之具體例,流體執道構成可 種尺寸的晶圓。按照此具體例,對立導件間之距離 節。 M-A-Sj n m 本發明參見附圖詳述和申請專利範圍即可更為 瞭’附圖t同板數字指類似元件,其中 第1圖為本發明化學機械式拋光裝置之透視圖; 第2圖為苐1圊所示化學機械式拋光裝置之斷面 或逼其 比習知 解決方 含基部 ’其構 軌道基 表面之 線實質 按工件 ,把水 所需方 輸送各 可以調 完全明 圖》含^ 52527 5. Description of the invention (4) Summary of the invention The present invention provides an improved device 'for the workpiece to move in the desired direction. In particular, the present invention provides improved fluid handling, so that less fluid is in the water rail to move the workpiece. The present invention addresses the shortcomings of water or fluid rails known today, and is detailed below. However, in general, the channel formed by the fluid rail package is improved, and the guide provided at the base is improved. The base part contains the pass = so that the fluid is drained into the channel in the direction of the workpiece, so that the workpiece is suspended above the part "... According to the etiquette of the present invention, the flow path contains a substantially flat twisted base" According to another important point of this specific example, the base The & of the included via is perpendicular to the flat surface. According to another gist of this specific example, the surface area of each bottom of the base contains about 6 through holes "According to another specific example of the present invention," the fluid track contains a water jet bow 丨 to the top surface of the workpiece "and pushes the crystal along the desired movement direction of the workpiece The circular press moves. According to a further specific example of the present invention, the fluid channel constitutes a wafer of various sizes. According to this specific example, the distance between opposing guides is a knot. MA-Sj nm The present invention can be changed by referring to the detailed description of the drawings and the scope of patent application. The drawings refer to similar elements on the same plate, wherein FIG. 1 is a perspective view of a chemical mechanical polishing device of the present invention; FIG. 2 The section of the chemical mechanical polishing device shown in 苐 1 或 or its solution is based on the conventional solution, including the base. The line of the base surface of the trajectory is essentially according to the workpiece, and the water required can be completely adjusted.

第7頁 452527 · 五、發明說明(5) ' ~ 有三條流艘軌道; 第3囷為本發明流艘軌道例之俯視圖; 第4固為本發明流體轨道變通例之俯視圖; 第5圖為本發明流體軌道又一具體例之俯視圖; 第6圖為本發明具有淋洗站和所附設懸空嘴漢總成之 流體軌道透視圖; 第7圖為本發明淋篷頭之俯視平面圈。 較佳具體例之詳細說明 本發明一般係關於工件輸送裝置,尤指流鱧軌道,構 成使工件按所需方向運動。雖然本發明可用在各種數法咬 裝置之間輸送各種工件,但本發明下述為了方便起見,係 就各種後化學機械拋光清洗和淋洗製程間輸送半導體晶圓 為例加以說明。 第1和2圖表示化學機械式拋光機1〇〇,包含本發明具 想之複數流體軌道200, 210,. 220。抛光機1〇〇適當含有晶圓 裝料和卸料站110;拋光模組120,含有索引站230,和具 有拋光表面250之拋光站240 ;以及清洗站130,含有轨道 200, 2 1 0, 220。 拋光機100典型上用來從晶圓260的一面或多面除去所 需量的材料。如下詳述’拋光機1〇〇構成從卡匣270取出乾 晶圓2 6 0 ’把晶圓2 6 0拋光、清洗、淋洗、乾燥,在裝料和 卸料站110把晶圓260送回卡匣270。 操作時,在站Π0把一或以上晶圓260裝料於拋光機 WO上。晶圓260再使用機器人280輸送至索引站230。在索Page 7 452527 · V. Description of the invention (5) '~ There are three flow ship orbits; No. 3 is a top view of an example of a flow ship orbit according to the present invention; No. 4 is a top view of a modification example of the fluid orbit of the present invention; Top view of another specific example of the fluid track of the present invention; FIG. 6 is a perspective view of the fluid track of the present invention having a washing station and an attached cantilever assembly; FIG. 7 is a top plan circle of the shower head of the present invention. Detailed description of preferred specific examples The present invention generally relates to a workpiece conveying device, particularly a flow track, which is configured to move a workpiece in a desired direction. Although the present invention can be used to convey various workpieces between various mathematical biting devices, the following description of the present invention, for the sake of convenience, will be described by taking the semiconductor wafer transport between various post-chemical mechanical polishing cleaning and rinsing processes as examples. Figures 1 and 2 show a chemical-mechanical polishing machine 100, which includes a plurality of fluid tracks 200, 210, and 220, which are contemplated by the present invention. The polishing machine 100 suitably includes a wafer loading and unloading station 110; a polishing module 120 containing an index station 230 and a polishing station 240 having a polishing surface 250; and a cleaning station 130 containing a track 200, 2 1 0, 220. The polisher 100 is typically used to remove the required amount of material from one or more sides of the wafer 260. The polishing machine 100 is configured as follows to remove the dry wafer 260 from the cassette 270. The wafer 260 is polished, cleaned, rinsed, and dried, and the wafer 260 is sent to the loading and unloading station 110. Back to the cassette 270. In operation, one or more wafers 260 are loaded on the polishing machine WO at the station UI0. The wafer 260 is transferred to the indexing station 230 using the robot 280. In cable

第8頁 45252^ t 五、發明說明(6) 引站230,晶圓260裝料(例如從站230的裝料杯)於拋光載 體290内,輸送至拋光站240供處理。藉晶圓260表面相對 於抛光表面250運動而從表面除去此項抛光常常是在 脫離子水、漿液组成物,或其组合物内發生。晶圓260經 拋光後’即送回到索引站230(例如至站230的卸料杯)。晶 圓260從索引站230使用輕敲器300移到清洗站130。 清洗站130例包含第一流艘軌道200 '第一沖洗站 、第二流體軌道210、第二沖洗站320、第三流體軌道22〇 、淋洗站330、乾燥器340。第一流體轨道200從輕敲器3〇〇 接受晶圓260’並逼晶圓260進入第一沖洗站310。同理, 第二流體軌道210從沖洗站310接受晶圓260,並逼晶圓260 進入第二沖洗站320»第三流體執道220適當構成逼晶圓 260至淋洗站330。俟晶圓260淋洗後,機器人280把晶圓 260傳送入乾燥器340内。再由機器人280把晶圓260從乾燥 器340移動至裝料和卸料站1.1〇之卡匣270 » 按照本發明,流體軌道2 0 0,2 1 0, 2 2 0構成把晶圓2 6 0從 一處移送到另一處,是把晶圓260懸浮於流體内,對晶圓 260施加流體壓力,逼晶圓26〇朝預定或所需方向。晶圓 2 6 0懸浮是對晶圓2 6 0底面提供流體薄膜,以保持晶圓2 6 0 在軌道底面上方《如後詳述,軌道2〇〇,210, 220例構成使 用較少流體,製造較易較省,可運動各種尺寸的晶圓,並 容許晶圓在轨道内以複數方向(例如向前、向後、或轉動) 運動。 特殊流體軌道的造型,視不同用途而異。然而,一般Page 8 45252 ^ t V. Description of the invention (6) The pick-up station 230, the wafer 260 is loaded (for example, the loading cup of the slave station 230) in the polishing carrier 290, and transferred to the polishing station 240 for processing. Removal of this polishing from the surface by moving the surface of the wafer 260 relative to the polishing surface 250 often occurs in deionized water, a slurry composition, or a combination thereof. After the wafer 260 is polished ', it is returned to the index station 230 (e.g., a discharge cup to the station 230). The wafer 260 is moved from the indexing station 230 to the cleaning station 130 using the tapper 300. The cleaning station 130 includes, for example, a first flow track 200 ′, a first flushing station 210, a second fluid track 210, a second flushing station 320, a third fluid track 22 0, a washing station 330, and a dryer 340. The first fluid track 200 receives the wafer 260 'from the tapper 300 and forces the wafer 260 into the first processing station 310. Similarly, the second fluid track 210 receives the wafer 260 from the washing station 310, and forces the wafer 260 into the second washing station 320. The third fluid channel 220 appropriately constitutes the forcing wafer 260 to the washing station 330. After the wafer 260 is rinsed, the robot 280 transfers the wafer 260 into the dryer 340. The robot 280 then moves the wafer 260 from the dryer 340 to the cassette 270 of the loading and unloading station 1.10 »According to the invention, the fluid track 2 0, 2 1 0, 2 2 0 constitutes the wafer 2 6 0 is moved from one place to another by suspending the wafer 260 in a fluid, applying fluid pressure to the wafer 260, and forcing the wafer 260 to a predetermined or desired direction. Wafer 2600 suspension is to provide a fluid film to the bottom surface of wafer 2600 to keep wafer 2600 above the bottom surface of the track. As detailed later, the track 200, 210, 220 cases use less fluid. It is easier and cheaper to manufacture, can move wafers of various sizes, and allows the wafers to move in multiple directions (such as forward, backward, or rotation) within the track. The shape of the special fluid track varies depending on the application. However, generally

t 4525 2 7 五、發明說明(Ό 而言’本發明流體軌道包含基部,内形成通孔,水從基部 向上流向晶圓’並有導件,以操縱工件至所需目的地。 第3圓表示軌道2〇〇之俯視圈。軌道200包含基部350, 形成通孔360,並有軌條370,372, 374,協助晶圓260按所 需方向’例如箭頭A所示方向運動。軌道200亦含有流雒引 發或推進機制,諸如喷嘴38〇,逼晶圓按所需方向運動。 同理’如第4-6圖所示,軌道210和220適度包含基部40 0, 500、通孔 410, 5i0、軌條 42 0-430, 520-530,和喷嘴 44 0, 5 40 °雖然本發明流體軌道可以各種方式構成,例如形成 第3圖所示流體軌道200例,為簡明起見,以下就軌道220 詳述本發明流體軌道,詳見第5和6圖。 執道220的基部500,係由與懸浮晶圓260所用流體相 容之任何材料形成;材料最好亦與晶圓26〇拋光中所用化 學劑相容《另外’基部500可塗拋光晶圓260時所用懸浮液 和/或化學劑相容之材料。按照本發明較佳具體例,基部 500是由聚對苯二甲酸乙二酯(pet)等聚合物材料形成。 基部500適於包含實質上平坦表面550,晶困260可在 上面行過。更具體而言’基部5〇〇宜在表面550上不含有任 何實質上凸部或凹部。咸信平坦表面550較具有實質上凸 部或凹部的基部之轨道,所需懸浮和輸送晶圓26〇用的流 體較少。按照本發明具體例,基部5 〇 〇之寬度(如箭頭ff所 示)’較晶圓260的最長維度(例如直徑)為寬。此舉使晶圓 260懸浮較接近表面550。 基部500亦含有流體供應裝置,諸如通孔51〇,以供應t 4525 2 7 V. Description of the invention (Ό In terms of 'the fluid track of the present invention includes a base, a through hole is formed therein, and water flows upward from the base to the wafer', and there are guides to manipulate the workpiece to the desired destination. Round 3 Shows the top view circle of the track 200. The track 200 includes a base 350, forming a through hole 360, and has rails 370, 372, 374 to assist the wafer 260 to move in a desired direction, such as the direction shown by arrow A. The track 200 also contains flow雒 Initiating or advancing mechanisms, such as nozzle 38, force the wafer to move in the desired direction. Similarly, as shown in Figure 4-6, the tracks 210 and 220 moderately include the base 40 0, 500, the through holes 410, 5i0, Rails 42 0-430, 520-530, and nozzles 44 0, 5 40 ° Although the fluid track of the present invention can be constructed in various ways, for example, forming 200 fluid tracks as shown in FIG. 3, for simplicity, the following is the track 220 Detailed description of the fluid track of the present invention is shown in Figures 5 and 6. The base 500 of the track 220 is formed of any material compatible with the fluid used in the suspended wafer 260; the material is also preferably used in wafer 26 polishing. The chemical agent is compatible with the "base 500 can be coated with polishing wafer 260 Suspension and / or chemically compatible materials. According to a preferred embodiment of the present invention, the base 500 is formed of a polymer material such as polyethylene terephthalate (pet). The base 500 is adapted to include a substantially flat surface 550, crystal sleep 260 can pass on it. More specifically, the 'base 500' should not contain any substantially convex or concave portions on the surface 550. The flat surface 550 is more than a base with substantially convex or concave portions. In the track, less fluid is needed to suspend and transport the wafer 26. According to the specific example of the present invention, the width of the base 500 (as shown by the arrow ff) is longer than the longest dimension (for example, the diameter) of the wafer 260 is Wide. This moves the wafer 260 closer to the surface 550. The base 500 also contains a fluid supply device, such as a through hole 51, to supply

第10頁 452527 五,發明說明(8) 流殖至轨道220 » —般而言,流體經通孔510供至轨道220 ,使晶圓260懸浮於表面550上方。然而,供應至軌道220 之流艟流量,最好不足以產生使晶圓260運動的流動*而 是操縱通孔510出來的流體使晶圓2 60懸浮在表面550上方 ,使晶圓260可以任何所需方向移動。例如薄膜的水可提 供足夠懸浮以保持晶圓260在表面550上方》按照本發明具 體例,經通孔510對軌道220供應每26000cm2每分鐘約4公 升(或0.15 cm/min),以保持晶圓260懸浮。 雖然通孔尺寸和數量視特定軌道形態而定,但按照本 發明較佳具體例,通孔510直徑約〇. 〇8至約0. 1 2mm,而以 約0.10 mra為佳。再者’基部500在每晶圓表面積含有約4至 約8個通孔,以約6個為佳〇例如,構成處理直徑2〇〇mm晶 圓的軌道220,每(7Γ* r2)約6個通孔,或每平方毫米1.91 木1 0_<個通孔。 按照本發明具體例,在基部500附設有轨條520, 530等 導件。導件一般構成在表面550含有流體,以防流體不良 濺於基部500的邊緣(例如邊緣560或570),在晶圓260行過 表面550時’可導引和容納晶圓260。按照本發明可採用把 軌條520, 530附設於基部500的任何適當機構,諸如機械式 或化學式附設機構。另外’轨條52 0和530可與基部500成 為一體。然而’按照本發明較佳具體例,軌條52〇, 530是 使用機械式扣彳牛’即螺帽和螺栓,附設於基部500»按照 本發明又一具體例’軌條520, 5 30和/或基部500包含長孔 ’可供螺栓插穿’以便調節對立軌條520, 530間的間隔,Page 10 452527 V. Description of the invention (8) Colonization to track 220 »Generally speaking, the fluid is supplied to the track 220 through the through hole 510, so that the wafer 260 is suspended above the surface 550. However, the flow rate of the current supplied to the track 220 is preferably not sufficient to generate a flow to move the wafer 260 *. Instead, the fluid from the through hole 510 is manipulated to suspend the wafer 2 60 above the surface 550, so that the wafer 260 can Move in the desired direction. For example, the thin film of water can provide sufficient suspension to keep the wafer 260 above the surface 550. According to a specific example of the present invention, the track 220 is supplied through the through hole 510 to about 4 liters per minute (or 0.15 cm / min) per 26000 cm2 to maintain the crystal. Circle 260 is suspended. Although the size and number of the through holes depend on the specific track shape, according to a preferred embodiment of the present invention, the diameter of the through holes 510 is about 0.08 to about 0.1 2 mm, and preferably about 0.10 mra. Furthermore, the 'base portion 500 contains about 4 to about 8 through holes per wafer surface area, preferably about 6 holes. For example, the track 220 constituting a wafer having a diameter of 200 mm is about 6 per (7Γ * r2). Through holes, or 1.91 wood per square millimeter. According to a specific example of the present invention, guides such as rails 520, 530 are attached to the base portion 500. The guide is generally configured to contain a fluid on the surface 550 to prevent the fluid from splashing on the edge of the base 500 (such as the edge 560 or 570), and the wafer 260 can be guided and accommodated when the wafer 260 passes through the surface 550. Any suitable mechanism for attaching the rails 520, 530 to the base 500 may be used in accordance with the present invention, such as a mechanical or chemical attachment mechanism. In addition, the rails 52 0 and 530 may be integrated with the base 500. However, according to a preferred embodiment of the present invention, the rails 52, 530 are made of mechanical yak, that is, nuts and bolts attached to the base 500. »According to another embodiment of the present invention, the rails 520, 5 30 and / Or the base 500 includes a long hole 'for bolt insertion' to adjust the interval between the opposite rails 520, 530,

第11頁 452527 五、發明說明(9) 配合處理各種尺寸的晶圓。 對立軌條間的間隔,視工件行過的基部500尺寸和類 型而定。一般而言,選擇間隔使晶圓.260可運動跨越表面 500,不對軌條520, 530造成不當損壞。例如,若晶圓260 的直徑約150mm’則軌條520和530間之距離約165 mm。另外 ,若晶圓260直徑約200mm,對立轨條520, 530間之間隔則 以220mm為佳。 第5-6圖所示喷嘴540構成按晶圓260所需運動方向施 力於晶圓260,即可逼晶圓260往預定方向。使用來自通孔 510的流體使晶圓260懸浮於表面550上方,則喷嘴540可用 來引導晶圓於任何所需方向。為提高喷嘴540逼力的效率 ’喷嘴540的流出物不導至晶圓26〇邊緣。按照本發明較佳 具體例*喷嘴540流出物按晶圓所需運動方向引至晶圓26〇 頂表面’使流出物以水平以下約5度角流開噴嘴54〇。此外 ’喷嘴540宜構成把流體喷在晶圓26〇表面的前緣,而喷嘴 540宜繼績把流想喷在表面上,直到晶圓26〇通過流體。可 在軌道220周緣和/或表面550上方或下方,置設複數喷嘴 。此外’可用多孔喷嘴,諸如第6圖所示喷嘴6〇〇,把晶圓 260逼往所需方向β 操作時’脫離子水等流體經通孔51()引進軌道22〇内。 如上所述’流體的流量使流體把晶圓2 6 〇懸浮於表面5 5 〇上 方。一旦流體存在於執道22〇上,流經通孔51〇的流體即停 止’或者繼續以足夠懸浮晶圓2 6〇的流量流動。再經喷嘴 540和/或喷嘴600對晶圏260施加水流,逼晶圓260往所需Page 11 452527 5. Description of the invention (9) Cooperate with wafers of various sizes. The spacing between the opposing rails depends on the size and type of the base 500 through which the workpiece passes. In general, the spacing is chosen so that wafer .260 can move across surface 500 without undue damage to rails 520, 530. For example, if the diameter of the wafer 260 is about 150 mm ', the distance between the rails 520 and 530 is about 165 mm. In addition, if the wafer 260 is about 200 mm in diameter, the interval between the opposing rails 520 and 530 is preferably 220 mm. The nozzle 540 shown in Figs. 5-6 is configured to apply a force to the wafer 260 according to a desired movement direction of the wafer 260, so as to force the wafer 260 to a predetermined direction. Using the fluid from the through hole 510 to suspend the wafer 260 above the surface 550, the nozzle 540 can be used to guide the wafer in any desired direction. To improve the efficiency of the force of the nozzle 540, the effluent from the nozzle 540 does not lead to the edge of the wafer 26. According to a preferred embodiment of the present invention, the effluent from the nozzle 540 is guided to the top surface of the wafer 26 according to the desired movement direction of the wafer 'so that the effluent flows away from the nozzle 54 at an angle of about 5 degrees below the horizontal. In addition, the nozzle 540 should constitute a leading edge that sprays fluid on the surface of the wafer 26, and the nozzle 540 should continue to spray the stream on the surface until the wafer 26 passes the fluid. Multiple nozzles may be provided above or below the periphery of the track 220 and / or the surface 550. In addition, when a porous nozzle such as the nozzle 600 shown in FIG. 6 is used to drive the wafer 260 in the desired direction β, fluid such as deionized water is introduced into the track 22 through the through hole 51 (). As mentioned above, the flow rate of the fluid causes the fluid to suspend the wafer 2600 above the surface 550. Once the fluid is present on the channel 22o, the fluid flowing through the through-hole 51o will stop 'or continue to flow at a flow sufficient to suspend the wafer 26o. Water is then applied to the wafer 260 through the nozzle 540 and / or the nozzle 600, forcing the wafer 260 to the desired position.

Mi ΙΗΗΙΗ 第12頁 452527 1 五、發明說明(ίο) 或預定方向。另外,軌道220可按一方向或另一方向傾斜 ,逼晶圓260按所需方向運動。因為本發明不用溝道内的 流動水流逼晶圓260往所需方向,則本發明輸送晶圓260所 用水量較習知水軌為少,而且軌道220可用來逼晶圓260往 許多方向。例如,可用軌道220周面置設複數喷嘴540,使 喷嘴540流出物指向不同方向。則利用啟閉一或以上喷嘴 ,即可控制晶圓的運動方向。 在本發明較佳具體例中,執道2 20又含有懸空噴灑總 成610和620。懸空噴灑總成610,620適於構成把脫離子水 等沉積在晶圓260表面。因為軌道220構成比習用軌道使用 流體為少,故宜用懸空總成610,620以助晶圆260保濕,直 到晶圓260通過淋洗站330。 如第6圖所示,按照本發明具體例,軌道220附設於淋 洗站330或形成一體總成。淋洗站330最好含有淋篷頭7〇〇 ,詳見第7圖"淋蓬頭700構成在晶圆260暴露於在乾燥環 境之前將晶圓260淋洗。雖然淋篷頭700可構成各種形狀, 但按照本發明較佳具體例,淋篷頭700包含實質上半圓形 部710。此部710適於包含其内形成的一或以上通孔720, 容許脫離子水等流體流經通孔到達晶圓260。 通孔720宜構成使通孔720流出物以相對於晶圓260表 面呈0至90度角碰到晶圓260,而以約60度角為佳。此外, 雖然通孔72 0可指向若干不同方向,但按照本發明,通孔 720宜指向使通孔720流出物一般以箭頭B所示方向流動。 在淋洗過程中,晶圓260移至淋洗站330,使流體流經Mi ΙΗΗΙΗ Page 12 452527 1 V. Description of invention (ίο) or predetermined direction. In addition, the track 220 may be inclined in one direction or the other direction, forcing the wafer 260 to move in a desired direction. Because the present invention does not use the flowing water in the trench to force the wafer 260 to the desired direction, the amount of water used to transport the wafer 260 according to the present invention is less than the conventional water rail, and the rail 220 can be used to force the wafer 260 in many directions. For example, a plurality of nozzles 540 may be placed on the periphery of the track 220 so that the effluent from the nozzles 540 may point in different directions. Then, by opening or closing one or more nozzles, the movement direction of the wafer can be controlled. In a preferred embodiment of the present invention, the track 2 20 contains the overhead spraying assemblies 610 and 620. The overhead spraying assemblies 610, 620 are suitable for forming the deposition of deionized water or the like on the surface of the wafer 260. Because the track 220 has less fluid than the conventional track, a floating assembly 610,620 should be used to help the wafer 260 moisturize until the wafer 260 passes through the rinse station 330. As shown in Fig. 6, according to a specific example of the present invention, the rail 220 is attached to the washing station 330 or forms an integrated assembly. The shower station 330 preferably contains a shower head 700, see FIG. 7 for details. The shower head 700 is configured to rinse the wafer 260 before the wafer 260 is exposed to a dry environment. Although the shower head 700 can be formed in various shapes, according to a preferred embodiment of the present invention, the shower head 700 includes a substantially semi-circular portion 710. This portion 710 is adapted to include one or more through holes 720 formed therein, allowing fluid such as deionized water to flow through the through holes to the wafer 260. The through hole 720 is preferably configured so that the outflow of the through hole 720 touches the wafer 260 at an angle of 0 to 90 degrees with respect to the surface of the wafer 260, and preferably about 60 degrees. In addition, although the through-hole 720 may point in several different directions, according to the present invention, the through-hole 720 should preferably be directed so that the outflow of the through-hole 720 generally flows in the direction shown by arrow B. During the rinsing process, the wafer 260 moves to the rinsing station 330, allowing the fluid to flow through

第_ 13頁Page _ 13

Claims (1)

452527 六、申請專利範固 1. 一種流逋軌道,使工件運動之用,包括: 基部,含有許多通孔和實質上平坦表面,其中該通 孔係形成於該平坦表面内,並構成供應流體至該軏道,藉 施壓於工件底面,使流體將工件懸浮於該基部上方; 附設於該基部之導件,其中該導件構成把工件引向 所需方向;以及 工件推進機制,與該導件聯結,該機制構成施加流 艘於該工件表面,把該工件逼向預定方向者。 2. 如申請專利範圍第1項之流體軌道,其中該工件每 底表面積有該通孔數約4至約8個者。 3. 如申請專利範圍第1項之流體軌道,其中該基部是 由聚對苯二甲酸乙二酯形成者。 4. 如申請專利範園第1項之流體軌道,其中該通孔為 實質上圓筒形,且直徑約0.1毫米者。 5·如申請專利範圍第1項之流體軌道,其中該推進機 制含有喷嘴’把該流體分佈於該項表面者。 6. 如申請專利範圍第1項之流體軌道,又包括懸空喷 灑總成’聯結於軌道一部份,其中該喷灑總成構成施加流 體於工件之頂表面者。 7. 如申請專利範圍第1項之流體轨道,又包括淋洗站 ’聯結於軌道一部份,其中該淋洗站構成施加流體於工件 之頂表面者。 8·如申請專利範圍第7項之流體軌道,其t該淋洗儳 含有淋篷頭者。452527 6. Application for patent Fangu 1. A flow track for moving a workpiece, including: a base, containing a plurality of through holes and a substantially flat surface, wherein the through holes are formed in the flat surface and constitute a supply fluid To the tunnel, by applying pressure to the bottom surface of the workpiece, the fluid suspends the workpiece above the base; a guide attached to the base, wherein the guide constitutes guiding the workpiece in a desired direction; and a workpiece advancing mechanism and the The guides are connected, and the mechanism constitutes a person who applies a flow boat to the surface of the workpiece and pushes the workpiece in a predetermined direction. 2. If the fluid track of item 1 of the patent application scope, wherein the bottom surface area of the workpiece has about 4 to about 8 through holes. 3. The fluid track of item 1 of the patent application, wherein the base is formed of polyethylene terephthalate. 4. The fluid track of item 1 of the patent application park, wherein the through hole is substantially cylindrical and has a diameter of about 0.1 mm. 5. The fluid track of item 1 in the scope of the patent application, wherein the propulsion mechanism includes a nozzle 'to distribute the fluid on the surface. 6. For example, the fluid track of the scope of the patent application also includes a suspended spraying assembly 'connected to a part of the track, wherein the spraying assembly constitutes a person applying a fluid to the top surface of the workpiece. 7. If the fluid track of item 1 of the patent application scope includes a washing station ′ connected to a part of the track, wherein the washing station constitutes a person who applies fluid to the top surface of the workpiece. 8. If the fluid track of item 7 of the patent application scope, the shower head contains the shower head. 第16頁 452527 / 六、申請專利範面 9·如f請專利範圍第1項之流體軌道,其中該實質上 w坦表面之宽度’至少等於工件底表面之最長維度者。 10.—種將工件逼向所需方向用之裝置,包栝 基部’含有許多通孔,構成容許流體流經該基部’ 向工件底表面’其中工件係利用流體懸浮於該基部表面 上方’而工件每底表面積有該通孔數在約8個以下; 附設於該基部的軌條,其中該軌條構成導引工件, 使工件按所需方向移動;以及 附設於該軌條的喷嘴,其中該喷嘴構成利用流體排 放到工件表面’以協助工件按所需方向運動者。 Π.如申請專利範圍第10項之裝置,其中流體為脫離子 水者。 12.如申請專利範圍第10項之裝置,其中該通孔直徑 1毫米者。 13·如申請專利範圍第10項之裝置,其中該基部係由聚 對笨二甲酸乙二酯形成者。 14. 如申請專利範圍第1〇項之裝置,又包括淋洗站, 結於裝置一部份,其中該淋洗站構成有助於從工件表 去殘屑者。 除 15. 如申請專利範圍第14項之裝置,其中該淋洗蚰6 淋篷頭者。 包含 16.如申請專利範圍第10項之裝置,又包括懸空噴灌 成,其中該總成構成施加流體於工件者。 '' 17.如申請專利範圍第10項之裝置’其中流體以每分錄Page 16 452527 / VI. Patent application scope 9. If the fluid track of item 1 of the patent scope is requested, the width of the substantially wtan surface 'is at least equal to the longest dimension of the bottom surface of the workpiece. 10. A device for forcing a workpiece in a desired direction. The base includes a plurality of through holes that constitute a fluid that allows fluid to flow through the base to the bottom surface of the workpiece. The workpiece is suspended by the fluid above the surface of the base. The number of the through holes per bottom surface area of the workpiece is less than about 8; a rail attached to the base, wherein the rail constitutes a guide to move the workpiece in a desired direction; and a nozzle attached to the rail, wherein The nozzle constitutes a person who uses fluid to be discharged to the surface of the workpiece to assist the workpiece in moving in the desired direction. Π. The device according to item 10 of the patent application, wherein the fluid is deionized. 12. The device as claimed in claim 10, wherein the diameter of the through hole is 1 mm. 13. The device as claimed in claim 10, wherein the base is formed of polyethylene terephthalate. 14. If the device in the scope of patent application No. 10 includes a rinsing station, which is part of the device, the rinsing station constitutes a person who helps to remove debris from the surface of the workpiece. Except 15. The device according to item 14 of the patent application scope, wherein the shower head has 6 shower heads. Contains 16. The device according to item 10 of the patent application scope, further comprising an overhead sprinkler formation, wherein the assembly constitutes a person applying fluid to the workpiece. '' 17. The device according to item 10 of the scope of patent application, wherein the fluid is recorded per entry 45 25 27 六、申請專利範团 ' --- 一 約〇. 15cm的速率流動者。 18·如申請專利範团第1〇項之裝置,其中該喷嘴構成引 導流饉至工件頂表面者。 19.如申請專利範圍第1〇項之裝置,其中該通孔形成於 該基部之實質上平坦表面内者。 2〇.—種將工件逼向所需方向用之裝置,包括: ^ 基部’構成接受工件’其中該基部包含通孔,構成 4許流艘流到該基部之表面上:以及 可調性導件’附設於該基部’該可調性導件構成容 許處理各種尺寸之工件,並導引工件運動越過該基部表面 之一部份者β 21如申請專利範圍第20項之裝置,又包括工件推進機 制’構成把工件逼向所需方向者。 2 2.如申請專利範圍第2〇項之裝置,又包括附設於該裝 置之喷嘴’其中該噴嘴構成供應流艘,施力於該工件頂表 面者》 23. 如申請專利範圍第2〇項之i置,又包括該基部包含 實質上平坦表面者。 24, 一種構成運動工件之流體軌道,包括: 基部’具有流艘膜,在工件和該基部之間,其中該 $把工件懸浮於該基部上方;以及 工件推進機制,聯結於該基部,該機制構成施加流 體於該工件之頂表面,將該工件逼向預定方向者。 25·如申請專利範圍第24項之流體軌道,又包括導件,45 25 27 VI. Patent application group '--- a flow rate of about 0.15cm. 18. The device according to item 10 of the patent application group, wherein the nozzle is configured to guide the flow to the top surface of the workpiece. 19. The device of claim 10, wherein the through hole is formed in a substantially flat surface of the base. 2〇.—A device for forcing a workpiece in a desired direction, including: ^ a base 'constituting a receiving workpiece', wherein the base includes a through hole, constituting a flow of 4 vessels onto the surface of the base: and an adjustable guide Piece 'attached to the base' The adjustable guide constitutes a piece that allows processing of workpieces of various sizes and guides the movement of the workpiece across a portion of the surface of the base β 21 The device, including the scope of patent application, includes the workpiece The “propulsion mechanism” constitutes a person who pushes the workpiece in a desired direction. 2 2. If the device in the scope of patent application for item 20 includes the nozzle attached to the device, where the nozzle constitutes a supply flow vessel and exerts force on the top surface of the workpiece "23. If the scope of patent application is in item 20 It also includes those in which the base portion includes a substantially flat surface. 24. A fluid track constituting a moving workpiece, comprising: a base portion having a flow boat membrane between the workpiece and the base portion, wherein the $ floats the workpiece above the base portion; and a workpiece pushing mechanism connected to the base portion, the mechanism It is constituted to apply fluid to the top surface of the workpiece and force the workpiece in a predetermined direction. 25. If the fluid track of item 24 of the patent application includes a guide, 第18莧 4 5 2 5 2 7 六、申請專利範圍 以促使工件往所需方向運動者。 26.如申請專利範圍第24項之流體軌道,其中該基部包 含實質上平坦表面,構成接受工件者。Article 18 苋 4 5 2 5 2 7 6. Scope of patent application To move the workpiece in the required direction. 26. The fluid track of claim 24, wherein the base includes a substantially flat surface, constituting a recipient. 第19頁Page 19
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7416370B2 (en) * 2005-06-15 2008-08-26 Lam Research Corporation Method and apparatus for transporting a substrate using non-Newtonian fluid
US8480810B2 (en) 2005-12-30 2013-07-09 Lam Research Corporation Method and apparatus for particle removal
US8388762B2 (en) 2007-05-02 2013-03-05 Lam Research Corporation Substrate cleaning technique employing multi-phase solution

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930684A (en) * 1971-06-22 1976-01-06 Lasch Jr Cecil A Automatic wafer feeding and pre-alignment apparatus and method
US4278366A (en) * 1977-03-18 1981-07-14 Gca Corporation Automatic wafer processing system and method
JPS5879733A (en) * 1981-11-06 1983-05-13 Hitachi Ltd Wafer transferring apparatus
US4624358A (en) * 1983-03-07 1986-11-25 Tokyo Shibaura Denki Kabushiki Kaisha Device for transferring lead frame
US4874273A (en) * 1987-03-16 1989-10-17 Hitachi, Ltd. Apparatus for holding and/or conveying articles by fluid
US5095661A (en) * 1988-06-20 1992-03-17 Westech Systems, Inc. Apparatus for transporting wafer to and from polishing head
IL113829A (en) * 1995-05-23 2000-12-06 Nova Measuring Instr Ltd Apparatus for optical inspection of wafers during polishing
US6213853B1 (en) * 1997-09-10 2001-04-10 Speedfam-Ipec Corporation Integral machine for polishing, cleaning, rinsing and drying workpieces

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