TW451597B - Electroluminescence display device - Google Patents

Abstract

The present invention provides an electro luminescence display device (EL display device) capable of obtaining a bright display by supplying a current which is to be intrinsically supplied to EL element while suppressing a lowering of current due to the resistance of driving power source line which is caused by the distance from a driving power source input terminal. In this device, there are provided respective driving power source lines 153 which are lines for supplying driving currents from a driving power source to organic EL elements formed in the display pixel area provided with display pixels, and respective driving power source lines 153 allocated in adjacent display pixels are connected with bypass lines 181 for every display pixel in the display pixel area. Thus, an organic EL display device capable of obtaining a bright display is obtained by supplying currents which are to be intrinsically supplied to EL elements to the organic EL elements while suppressing the lowering of power source currents due to the resistance of driving power source lines 153.

Description

A7 A7 Consumption cooperation of employees of the Intellectual Property Bureau of the Ministry of Economic Affairs 31§ € 5. Description of the invention (Technical field to which the invention belongs) The present invention relates to an electric field light-emitting display device having an electric field light emitting element and a thin film transistor. [Conventional Technology] In recent years, the industry has focused on eL display devices using electric field emission (Electro Luminescence: hereinafter referred to as "el") elements as a substitute for CRT and LCD display devices, for example; in switching elements that drive the elements 'El display devices equipped with so-called Thin Film Transistors (hereinafter referred to as "TFTs") are also under development. Fig. 3 is a plan view showing a display pixel of one of the organic el display devices. Fig. 4 shows an equivalent circuit diagram of plural display pixels of the organic El display device. Fig. 5 (a) is a cross-sectional view taken along line A_A in Fig. 3. Fig. 5 (b) is a sectional view taken along line b-B in Fig. 3.

As shown in FIGS. 3, 4 and 5, each display pixel is formed in an area surrounded by the gate signal line ι51 and the drain signal line] 52. A first element FT with a switching element is provided near the intersection of the two signal lines.] 30, the source of the TFT 130, 3] s, and a storage capacitor electrode described later, 54 form a capacitor, and also serve as a capacitor electrode. 55 At the same time, it is connected to the driver of the second TFT 14o] 42. Source 14 of the second and second TFT 140] s is the anode connected to the organic EL device. 1 6 1 = the other drain. 4 1 d is connected to the driving power line for driving the organic element. Parallel to the open electrode signal line 5] A capacitor is placed near the TFT. The capacitor 54} is formed of chromium and other materials, and is connected to the first plant f F 丨 丨 3 Source of 〇 丨 3h Capacitance --------------------- Order --------- (Please read the precautions on the back before filling (This page) Specifications:.: ¾ r >: U16i'j Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Cooperation Du printed 451597 A7 _ B7 V. Description of the invention (2) The electric charge stored between the electrodes 155 becomes a capacitor. This holding capacitor is provided to hold a voltage applied to the gate electrode 142 of the second TFT 140. First, the first TFT 130 of the switching TFT is described as follows: As shown in FIGS. 3 and 5 (a), an insulating substrate 110 made of a material such as quartz glass or alkali-free glass is provided with a network. (Chrome Cr), box (molybdenum Mo) and other high-melting-point metals formed by the gate signal line 151 and the gate signal line 152 made of A1, and then configured as the organic EL element drive power The driving power line 153 made of A1 »continues to form the gate insulating film 112 and an active layer 131 formed of a poly-silicon (hereinafter referred to as" p-Sij ") film, and the active layer 131 A lightly doped structure called LDD (Lightly Doped Drain) is provided. That is, a lightly doped region 13 1LD is provided on both sides of the ytterbium electrode 32 and a thickly doped source 13 1 s and a drain 13 1 d are provided on the outer side thereof. Then, on the gate insulating film 112, the active layer 131, and the stop insulating film 114, an interlayer insulating layer 115 is deposited in the order of Si02 臈, SiN film, and Si02 film, and is set in the corresponding region of the drain electrode 141d. The contact hole is filled with a metal such as A1 and a drain electrode 116 is provided. Then, the entire surface is provided with The planarizing insulating film 117 for planarizing the surface made of organic resin. Next, the second TFT 140 of the driving TFT of the organic EL element will be described later: As shown in FIG. 5, the substrate is made of quartz glass or alkali-free. On the insulating substrate 110 made of glass and other materials, a gate electrode 142 formed of a high melting point metal such as chromium and molybdenum is provided, and a gate insulating film 112 and a p-Si film I--11- -II — 1 < * — — — — — — ^ · 1111111 < Please read the notes on the back before filling out this page) This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 2 311160 Ministry of Economic Affairs' Consumer Agency of Intellectual Property Bureau printed A7 ______ B7___ 5. The active layer 141 formed by the description of invention (3), and an authentic or substantially authentic channel is provided above the gate 142 in the active layer 141 141c, and p-type dopant ion doping is performed on both sides of the channel 41c, and a source electrode 141s and a drain electrode 14d are provided to form a p-type channel TFT. Then, a gate insulating film 112 and an active layer 141 are formed. On the whole, it is deposited in the order of Si02 film, SiN film and Si02 film. It is formed as an interlayer insulating layer 115 ', and a contact hole provided in the field corresponding to the drain electrode 141d is filled with a metal such as A1 to configure a driving power line 153 connected to the driving power 150. An organic resin is formed on the entire surface. The planarization insulating film Π 7 for surface planarization. A transparent electrode made of ITO (Indium Thin Oxide) is formed at a position corresponding to the source electrode 141s corresponding to the planarized insulating film 11 7 through the contact hole, that is, an organic EL The anode 161 of the element is provided on the planarization insulating film Π7. The organic EL element 160 is an anode 161 formed by a transparent electrode such as IT0, and a first hole transport layer 162 formed by MTDATA (4,4-bis (3-methylphenylphenylamino) biphenyl), and TPD (4,4-4tris (3-methylphenylphenylamino) triphenylanine) The second hole transport layer 1631 contains 36692 (10-benzo [h ] Light-emitting layer 164 made of barium phosphonate complex, and light-emitting element layer 166 made of electron transport layer 165 made of Bebq2, cathode made of manganese-indium alloy] 67 Structure of the cathode formed by sequential deposition〗 67 As shown in FIG. 3, the cathode 1 67 is arranged in the whole of the organic EL display element #, that is, the whole surface of the paper. The organic element is composed of the holes of the anode and the cathode. Plant \ 's -----— — — — — ---. 11 — 11— Order * -------- (Please read Note 1f on the back before filling in this page)' 廷士 厂 实Dibei National Standards and Specifications II.4: ¾: Public ^ nm 4 5 tb 9 7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (4) The electrons are combined inside the light-emitting layer , The organic molecules forming the light-emitting layer are excited to generate excited electrons, and during the radiation-inactivation process of the excited electrons, light is emitted from the light-emitting layer, and the light can be emitted to the outside by the transparent anode through the transparent insulating substrate to emit light. In the above, “the charge applied to the source electrode 131s of the first TFT 130 can be stored in the holding capacitor 170 and simultaneously applied to the second TFT 140 gate electrode 142 as a voltage, and the organic el element can emit light in response to this voltage. [Invention The problem to be solved] However, as shown in FIG. 4, each of the driving power lines connected to the driving power source of the organic EL element is connected to the automatic power input terminal 180 provided outside the display pixel area, and is connected to each An array of display pixels arranged vertically. Therefore, 'the farther away from the driving power wheel into the terminal 180, the resistance value of the power cord corresponds to the greater its length', so the organic EL of the display pixels away from the power input terminal 18o position The element 160 'cannot supply the current that should be supplied, but has the problem of dimming the display. The present invention is made to the disadvantages of silver in the conventional device described above. The present invention provides an EL display device capable of suppressing the reduction in power supply current caused by the resistance of a driving power supply line, and providing an EL display device with a current that should be provided. [Solution to Problem] The present invention The EL display device includes: an electroluminescence element with a light-emitting layer between the anode and the cathode; the active electrode formed by the semiconductor chip is connected to the drain signal line, and the closed electrode is connected to the gate electrode respectively The first thin-film transistor of the signal line; and the active layer formed by the semiconducting film; ': installed ----------order --------- completed τ (please read it first) Note on the back, please fill in this again. I) This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 4 311160 Economy Zou Intellectual Property Bureau member consumption consumption.- .. A? —________ B7 V. Invention (5) A pole is connected to the driving power supply line of the electric field light emitting element, and a gate is connected to the source of the first thin film transistor and a source is connected to the second thin film transistor of the electric field light emitting element; and Will have the above electric field light emitting element, the first 1 The display pixel field in which the display pixels of the thin thin-film transistor and the second thin-film transistor are arranged in a matrix form; among which, the above-mentioned driving power lines arranged on adjacent display pixels are arranged on the display screen. The field is connected by bypass lines. [Embodiments of the Invention] The EL display device of the present invention will be described as follows: FIG. 1 shows a plan view of one pixel when the present invention is applied to an organic EL display device, and FIG. 2 shows an organic display. Equivalent circuit diagram of plural display pixels of the display device. The cross-sectional view taken along line A_A in the figure 丨 and the cross-sectional view taken along line B-B in the drawing is the same as the above-mentioned figure. Therefore, the number d shown in this embodiment is omitted! And the second TFTs 30 and 40 use so-called "b gate gate" TFTs with gates located under the active layer 13, and

This active layer indicates the use of a P-Si film. The gate electrodes 11 and 42 are tfT D organic EL display devices with a double gate structure. They are formed on a substrate 110 ′ made of glass or synthetic resin, or on a substrate having conductivity, or on a substrate such as a high-conductor conductor. TFTs are sequentially deposited on a substrate u of an insulating film such as Si02 and SiN, and an organic el element is formed. As shown in Figures 1 and 2, the display pixels are formed in the area surrounded by the gate signal line I 5 1 and the drain signal line 丨 52 to have organic EL elements. 60,-I ---- ----------- ^ (Please read the precautions on the back before filling this page) The display screen is arranged on the substrate in a rectangular shape.

Correction supplement 451597 Δ7 B7 on the 9th to the 5th of the year. 5. Description of the invention (6) Forming an organic EL display device β device ... (Please read the precautions on the back before filling out this page) Near the intersection of the two signal lines It has an i-th TFT 13o, and the source 131s of the TFT 13o. Is also formed as a capacitor electrode 155 that is formed between the capacitor 154 and the storage capacitor electrode 154, and is also connected to the gate 142 of the second TFT 14o. The source 141s of the second TFT is connected to the anode 161 'of the organic El element 160, and the other drain 141d is connected to the driving power line 153 for driving the organic element. Near the TFT, the first TFT is held. Capacitive electrode! 54 is arranged side by side on the gate signal line 151. The first storage capacitor electrode ι54 is formed by chromium, etc., and is formed by storing a charge between a second storage capacitor electrode 丨 55 formed by a polycrystalline silicon film connected to the first TFT 130 Is] 3 Is with a gate insulating film 112 interposed therebetween. Capacitor. The employees of the Ministry of Economic Affairs, Intellectual Property Bureau, and the Cooperative Cooperative printed the first TFT Π0 for the switch, as shown in Figures 1 and 5 (shown in the first figure) on an insulating substrate 11 formed of quartz glass and alkali-free glass. It has a gate signal line 151 ′ made of high melting point metals such as Cr and Mo and also serves as the gate electrode 132, and a drain signal line 152 formed of A1, and is configured to be connected by A1 to drive an organic EL. The driving power supply line 153 of the power source of the element. The first holding capacitor electrode 154 formed of a high melting point metal such as Cr and M0 is provided on the same layer as the gate electrode. Continued 'Sequence deposition of the gate insulating film 112, And p-Si131 active layer 131. On the active layer 131 above the gate electrode 132, a stop insulating film 114 made of a Si02 film is formed to form a source electrode 13 Is and a drain electrode Id. When the ions are implanted, the channels 131c are covered so that the ions do not enter the channels 131c. The active layer 131 is provided with a so-called LDD structure (lightly doped drain). That is, the gate electrode 132 is a paper standard that conforms to Chinese national standards (CNS ) A4 specification (210 x 297 male s) 6 311160 if; ·? .1.1 '· V. Description of the invention (7). = ^^ Field ⑶CD and its outer side are provided with a source electrode 131s and a non-polar electrode! 3Id ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The P-Si film of the active layer extends to the holding capacitor electrode] 54 ”, and the 4-pole insulating film U 2 ′ The electrode 154 and the second holding electrode make the etchback 155 constitute a holding capacitor. Then, at the interlayer insulating film 活性, the active layer 131 and the stop insulating film 114 ^ & sequentially deposit a SlO2 film, a SlN film, and a 02 film. Let ’s set it as an inter-level mountain ”and fill it with a contact hole corresponding to the drain electrode i31d. Fill in A] A non-polar electrode 设置 is set! 6. Full coverage is covered by the organic connection for the purpose of μ μ ^ More farmland + Smooth flat insulation insulation work] 7. Function "People, using organic EL elements 1 to 60 TF 2nd TF Ding is described in silly 3 'shown in Figure 5' in quartz glass, alkali-free glass The formed Shun plate 1 I 0 Bu ... I base people: forming a gate electrode made of high melting point metals such as Cl ·, Mo = sequentially forming an interlayer insulating film 112 and an active layer made of Bu Yi , The money saving active layer 141 'sets trueness above the gate 142, or the real philosophy', 4 channels of 141c 'and the channel], 4] c on both sides of the money layer (抗 笑. ! -Ϋ́ S 1 S Γι% Ρ ^ dopant drop (Beta) ion heteroaryl # 'set source 14 1 s and no access; Pk ^ ... 141 d.:

I… ”on the gate insulation 貘] 丨 2 and the active layer 1 4 丨 the winter surface L |, the pendulum film and bi0: film are deposited in order to form an interlayer insulation layer ... 1 4: and the electrode i4 1 d field The contact holes provided will be filled with A 1 and so on, which will be connected to the driving power supply 丨 50 power supply line 丨 53 and then to the public M 1 、 > ', egg? r 乂 $. There are 2 resins used to make the surface ^ sweep five, ... --_-—— lC hard edge town; and should correspond to the positive insulation 寐 M. 'and interlayer insulation film 丨h ^ i;: ....... " 旳 源 消 ', a contact to produce a product .. The file will be connected with the source η > -.:~.~' '- ----------------------- '

J.. ^ &Quot; ': T:;,.: -W -—— i — t .—.! I — — --- 衣 · — (please first wi? Back & of-~ -events " " " Tai page 丨 I '' 0 .3¾ Printed and printed V-Day Double Seal 515 97 by the Consumer Cooperatives of the Smart Finance and Economics Bureau of the Ministry of Economic Affairs ^^ S7 ___ V. Description of the invention (S) '' — ιτο formed transparent electrode ' That is, the anode electrode of the organic EL element is formed on the planarization insulating film 117. The structure of the organic el element 160 is the same as the structure shown in FIG. 5 explained in the conventional technology, so the description is omitted. The driving power line 1 5 3 of the current to the organic EL element 16 is described below. The driving power line 153 is in the field of display pixels. As is known in the art, it is arranged in the vertical direction, that is, the row direction. Each display element supplies a driving current. In the present invention, the driving power lines 153 connected to adjacent display pixels are arranged in a horizontal direction, that is, a line extending in a column direction. Route} 8 丨 is connected. That is, 'Yu adjoining.' Shows that the day element is applied with the same potential, and the Pong line 181 is formed with A1 and other materials β as above, with Pong Route 1 81 connects the driving power line 153 adjacent to each display pixel, so it is possible to suppress the resistance value of the driving power line 153 from increasing as it moves away from the driving power input terminal. The organic EL element 160 supplies the current that should be supplied to prevent the display brightness from decreasing due to the increase in resistance value. As shown in Figure 1, the line width of the drive power line 153 and the adjacent line 181 can be enlarged. In order to reduce the resistance value ', it is necessary to supply the current that should be supplied to the organic EL element 160 provided in each display pixel to prevent the display from darkening. The line width can also be increased to prevent electron migration (eiectromigration). Occurred. The line year at this time can be wider than the line width of the drain signal line 152. This paper size is applicable to the CNS A4 specification (210 X 297 public love) 311160-read the back of the first Note before filling out this page}

Λ; ___ Β7_ V. Description of the invention (9) In the above embodiment, the description of the situation when the gate electrodes m and π 4 are used as the double-gate structure, but the present invention is not limited to the double-gate structure. A single gate, or more than three multi-gate structures, can also achieve the same effect as this case. In the above embodiment, the semiconductor film is a p-S 丨 film, and a semiconductor film such as a microcrystalline silicon film or an amorphous silicon film may also be used. Also in the above-mentioned embodiment, the organic EL display device is explained. However, the present invention is not limited to the above description, and can also be applied to an inorganic EL display device in which a light-emitting layer is formed of an inorganic material, and the same effect is obtained. [Effects of the Invention] The EL display device of the present invention is to reduce the increase in resistance value caused by the length of the driving power supply line, and to provide the current to be supplied to the EL display element of each display pixel in order to prevent the change. EL display device with dark display. [Brief description of the drawing] Fig. 1 is a display pixel level of the EL display device of the present invention. Fig. 2 is an equivalent circuit diagram of the EL display device of the present invention. Figure 3 shows the display of the conventional E.L .. display device. Day Plane Figure 2: Figure 4 The equivalent circuit diagram of the island ’s conventional El_ display device. Figure 5 of the Zhimengcai (a) to (b) is a plan view of the El display device _3 Production Bureau [Explanation of Symbols] j: Yes! I 0 Insulating substrate η 4 Stop insulating film f rr .; ί Heart: Interlayer insulating film ί 1 6 Dip Electron Co., Ltd. 丨 i *. 丨: i I 7 • Tanning insulation. Edge film;] fj 第; 丁 FT >!Λ:-r; 4: ί ·. : τ ^. '! ϋ-.:::' Repair 'L g:; · 451597 A7 B7 V. Description of the invention (1G)' 131, 141 Active layer 1 3 1 d, 141 d Drain 131LD, 141LD LDD field

140 2nd TFT 152 Promise signal line 154 1st holding capacitor electrode 160 Organic EL element 181 Side route (please fill in this page with the -¾ item on the back of the wir ...) 0 Install 131c • 141c Channel 131s, 141s Source 132, 142 Gate 151 Gate signal line 153 Power supply line 155 Second holding capacitor electrode 161 Anode ~ tr ·: Γ ⑴ (Revised page) 31.1160 This paper size applies the home standard (CNS) A4 specification (210 * 297 mm)

Claims (1)

eg _ D8 VI. Application for patent scope 1. An electric field light-emitting display device, comprising: an electric field emission (Electro Luminescence) element with a light-emitting layer between an anode and a cathode; an active layer drain electrode formed by a ferrite conductor The first thin-film transistor connected to the drain signal line and the gates respectively connected to the gate signal line; and the active layer drain formed by the semiconductor film is connected to the driving power line of the electric field light-emitting element; and the gate It is connected to the first thin film. A second thin-film thunder crystal with a source connected to the electric field light-emitting element; and a display element having the electric field light-emitting element, a thin film transistor, and a second thin film transistor arranged as The matrix-shaped display pixel field is in which the above-mentioned driving power lines arranged in the adjacent display pixels are connected to each other by a bypass line in the display day field. -I] I ί ['. — ---- (lif first reads the back of the-Italian matter and then writes too much page) Line 4 Property Bureau I