TW444294B - Semiconductor device and method for removing particles from bulk plasma in an etching process - Google Patents

Abstract

A method for removing particles from bulk plasma in an etching process includes the following steps: first, configuring a plasma etching machine; locating a wafer to be processed in the reaction chamber of the plasma etching machine for performing a plasma etching process; then, using the deflation pipe on one side of the reaction chamber to continuously deflate the by-products formed in the reaction chamber by the plasma etching process; and, during the plasma etching, irradiating the pulse laser above and parallel to the processed wafer in the reaction chamber so as to take away those particles for being separated from the deflation pipe.

Description

4442 94 V. Description of the invention (1) The present invention relates to the field of a semiconductor manufacturing process, and more particularly to a device and a method for removing moving particles from bulk plasma in an etching process. method. After entering the ultra-large integrated circuit (ULSI) generation, the etching process is becoming more and more important for making devices with sub-half-micrometer critical dimensions. (Plasma etching) has been widely used in today's semiconductor production lines due to the high accuracy of the resist pattern. However, during the etching process, the plasma process often generates a large amount of micro-coarse substances on the wafer surface, such as negatively charged by-products generated by chemical or physical mechanisms based on chemical or physical mechanisms due to exposure to plasma, Due to the effect of the electric field and magnetic field of the plasma etching machine, the negatively charged by-products are suspended in the plasma above the wafer to be produced and are not easy to be detached. Therefore, once the plasma plasma etching process is completed, these suspended particulate materials are Contamination is caused by falling on the surface of the wafer to be processed. In view of this, the purpose of the present invention is to form a color negative f-ray 'in the plasma reaction device' to remove the suspended particulate matter during the plasma process and to isolate it by pumping n to reduce the plasma process. Caused by particulate matter pollution. The plasma reaction device includes a reaction chamber 'wafers to be produced are arranged therein'. In addition, these charged by-products are formed by the plasma process, and most of them are negatively charged particulate matter and are suspended in the reaction. Room.

Page 4444 94 94 V. Description of the invention (2) By using incident-pulse laser, suspended particulate matter can be taken away, and U: ί is set on one side of the reaction chamber, and county-: shoulder DC voltage is applied to This t should be named wall so that the reaction chamber wall repels negatively charged particulate matter, and then the negatively charged particulate matter is evacuated by the suction line.

In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings, and the detailed description is as follows: D. Brief description of the drawings: FIG. 1 It is a partial schematic diagram showing a conventional plasma etching machine. Fig. 2 is a schematic view showing a part of the reaction device having a pulsed laser incident in one embodiment of the present invention. Fig. 3 is a plan view showing a pulsed laser beam entering and surrounding the reaction chamber in one embodiment of the present invention. Fig. 4 is a plan view showing a pulsed laser beam is injected into the reaction chamber from a plurality of fixed points in an embodiment of the present invention. Fig. 5 is a flow chart showing the steps for removing the particulate matter pollution generated by a large amount of plasma during the money engraving process in one embodiment of the present invention. DESCRIPTION OF SYMBOLS 10 ~ upper electrode plate; 20 ~ lower electrode plate; 30 ~ intake line; 40 ~ exhaust line; 50 ~ RF power supply; 60 ~ reaction chamber; 70 ~ wafer; 100 ~ semiconductor Device; 110 ~ upper electrode plate, 120 ~ lower electrode plate; 130 ~ intake line; 140 ~ exhaust line; 150 ~ RF power supply; 160 ~ reaction chamber; 170 ~ to be produced Wafer; 180 ~~ switch; 2000 ~ pulse laser light; 210 ~ 稜鏡; 220 ~ power supply; L10, L20, L21, L22 ~ pulse laser beam generation

¾ 1 4442 [V. Description of the invention (3) — device. Example In order to clearly distinguish the embodiment of the present invention from the conventional technology, please refer to FIG. 5 ′ and compare it with the conventional plasma etching machine of FIG. 1 described above. Taking the dry-relief process as an example, according to the first figure, the exhaust pipe in the traditional plasma rice engraving machine is directly connected to the etchi chamber in the following way, which is shown at the first! The device shown in the figure is a planar plasma type plasma etcher. The last engraving chamber 60 includes upper and lower electrode plates 10 and 20. The electrode plate 10 is coupled to a ground node and is to be crystallized. The circle 70 is placed on the surface of the electrode plate 20, and a radio frequency power source 50 (RF power source) supplies a radio frequency (radio frequency) voltage to the electrode plate 20 to generate a plasma in the cooking chamber 60. For example, the operating frequency is at a. 56MHZ AC plasma, and the gas used as the source of the plasma, is input from the inlet 30, and enters the etching chamber 60 through the hole (not shown) of the upper electrode plate 10, And evacuated from the suction line 40. The air inlet pipe 30 is generally provided above the shoe engraving chamber 60, and the air suction pipe 40 is provided below one of the side walls of the etching chamber 60. In addition, in a common magnetic-enhanced reactive ion plasma etcher (MERIE: magnetic-enhanced reactive ion plasma etcher), a set of permanent magnets is used to generate a magnetic field parallel to the surface of the wafer to be processed. (Not shown), and the magnetic field will be perpendicular to the electric field E0 '. Therefore, under the action of the magnetic field and the electric field E0, these negatively charged by-products will be suspended in the plasma and will not be easily taken away by the exhaust pipe 40.

4442 94 V. Description of the invention (4) --- The plasma etching process ends, the magnetic field and the electric field E0 cease to function, and these suspended particulate matter fall on the surface of the wafer to be processed 70, forming pollution. On the contrary, please refer to FIG. 5 with the device of FIG. 2. This embodiment provides a method for removing the particulate matter pollution generated by a large number of electrical equipment during the engraving process, which includes the following steps: (a) According to step S10, set a A plasma reaction device such as a plasma etching machine 100, and a wafer to be produced 170 is placed in its reaction chamber 160 to perform a plasma σ assembly process (such as a common magnetic field enhanced reaction ion) Plasma etching (MERIE). (b) According to step S20, a suction line 1 40 'provided on the reaction chamber side 60 is used to continuously remove by-products formed by the plasma etching process in the reaction chamber, including, for example, negatively charged particles Charged byproducts such as substances. (c) According to step S30, during the plasma plasma etching process, a pulse laser 2000 which is located above and parallel to the wafer to be produced 170 is incident in the reaction chamber "ο, so as to remove the particulate matter. It is evacuated by the suction line 丨 4 〇 For example, the semiconductor device for removing the particulate matter contamination generated by a large amount of plasma during the etching process according to FIG. 2 includes a plasma reactor. 100 'It has a chamber 160, which can be generally used in plasma chemical vapor deposition (PECVD), DC metal> sputtering, and dry etching. Here, Take reactive ion etching (RIE) as an example. The device shown in Figure 2 is a common magnetic field enhanced reactive ion plasma etching machine (MERIE). Parallel magnetic field setting (not shown). For example, within the etching chamber 1 60

Page 7 4442 94 V. Description of the invention (5) There are upper and lower electrode plates i 10 and 12; the upper electrode plate 110 is coupled to the ground node; the wafer to be produced 170 is placed on the surface of the lower electrode plate 20; RF power 15 (rf power Solar) supplies RF voltage to the electrode plate 12 to generate plasma in the etching chamber 160, such as an AC plasma at an operating frequency of 3 56 MHz. The gas that is the source of the plasma, such as a fluorine-containing gas, is input from the air inlet pipe 130, enters the etching chamber 160 through a hole (not shown) of the upper electrode plate 110, and is evacuated from the air suction pipe 140. The air inlet pipe 130 is generally arranged above the etching chamber 16o, the air suction pipe 14o is arranged below a side wall, and a magnetic field (not shown) parallel to the lower electrode plate 2o is parallel to the load to be produced Wafer i 7〇 surface. In addition, this embodiment further includes a pulse laser 200. A pulsed laser 200 is incident on and parallel to the wafer 170 to be processed through 稜鏡 2 10. In the reaction chamber 160, charged by-products suspended in the plasma are formed. Among them, the 'negatively charged particulate matter in the suspension-type electric house is in equilibrium due to the electromagnetic force1, and the binding force between the particulate matter is overcome by the pulsed laser beam of the laser 200 " yr (force) (b (? unding f〇rce), can take away particles without affecting the plasma state. And where 'pulse laser 2 0 0 the intensity of the laser beam acting on the particulate matter is I' and the particulate matter has a cross-sectional area A 'and The conversion momentum of particulate matter in the unit f is dp / dt = F ^ According to the "energy and momentum conversation" law

_dP 21-~ X c

The A /, middle 'C-system light speed and the factor 2 represent total reflection.

4442 9 4 V. Description of the invention (6) 'Next, as shown in Fig. 3 ^ 4 generator U0, and the rotation frequency is large, the laser beam (travelling ti.e) is rotated at a suitable frequency. It depends on the moving time of the particulate matter. HL20, L21, and L22 are respectively shown in Figure 4 '. The laser beam is generated because these charged V / objects are set to a large point ^ into the Λ beam. Therefore, on the opposite side of the chamber wall, 73 negative, electric, micro, and particulate matter groups +-to repel these charged voltages 220 coffee bias products can be extracted 7 by the suction line 140, " Avoid suction, supplementary rules These charged side-effects become pollution. The surface of the wafer to be produced is shaped by M, which can be used by the present invention. It can be composed of a variety of materials with appropriate characteristics = quality: not limited to the structure space of the invention cited in the embodiment = replacement And, although the present invention has been implemented in a better way. To limit the invention of 'anyone who is familiar with this skill :::: chicken: it is not in scope: when you can make a few changes and retouching, the scope of this I: Monthly § Defined shall prevail. Mingzhibao

Claims (1)

4442 94 Six 'patent application scope 1. A method for removing the particulate matter pollution caused by a large amount of electrical destruction during the etching process, including the following steps: Set up a plasma reactor and place a wafer to be processed in its reaction Plasma processing is performed indoors; an exhaust pipe provided on one side of the reaction chamber is used to remove by-products formed in the reaction chamber during the plasma manufacturing process and in the reaction chamber during the plasma manufacturing process A pulse X-ray is incident above and parallel to the wafer to be processed to remove the particulate matter and is removed by the .-. Extraction pipe. 2. The method according to item 1 of the scope of the patent application, wherein the particulate matter is a negatively charged particulate matter. 3. The method 'wherein' the particulate matter is suspended in the plasma of the reaction chamber as described in item 2 of the patent application scope. 4. The method described in item 3 of the scope of patent application, wherein a negative DC voltage is applied to the reaction chamber wall so that the reaction chamber wall repels adsorption of negatively charged particulate matter. The method described in item, wherein the pulsed laser beam is incident from a ring-shaped observation window on the outer wall of the reaction chamber through a beam and rotates around the ring-shaped observation window at an appropriate frequency, and the rotation frequency depends on Due to the movement time of particulate matter. 6. The method according to item 4 of the scope of patent application, wherein the pulsed laser beams are incident from a plurality of fixed points through chirps. 7 ’A semiconductor device that removes the particulate matter generated by a large amount of plasma generated during the process of engraving, including: Page 10 4442 94 VI. Scope of patent application " -------- A plasma reaction device 'has a reaction chamber, and a wafer to be produced in the reaction chamber;' ^ An exhaust line is provided in the One side of the reaction chamber is used to extract and remove by-products formed in the reaction chamber during the plasma process; a laser beam generator is arranged outside the reaction chamber. The side of the laser beam generates The incident direction of the laser beam generated by the device is located above and parallel to the Z-circle to be processed, so as to remove the particles and materials and to be extracted by an exhaust pipe. 8. The semiconductor device according to item 7 of the scope of patent application, wherein the particulate matter is a negatively charged particulate matter. 9. The semiconductor device according to item 8 of the patent application scope, wherein a negative DC voltage is applied to the reaction chamber wall so that the reaction chamber wall repels adsorption of negatively charged particulate matter. 1 10. The semiconductor device according to item 9 of the scope of the patent application, wherein the pulsed laser beam generated by the laser beam generator is incident from a ring-shaped observation window on the outer wall of the reaction chamber through a beam, and An appropriate frequency rotates around the annular observation window, and the rotation frequency depends on the particle moving time. '11 The semiconductor device according to item 9 of the scope of patent application, wherein the Rong pulse laser beam is incident from a plurality of fixed points via chirp.