4439 8 9 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（/ ) 本發明為一種含有氮化碳矽之材料及其製法，其為一種含 有氣化碳矽之材料’具有極高的硬度，而可作為磨料使用，戍 鍍在刀具上形成鍍膜，以利於作為切削工具者。 超硬材料包括最硬的鑽石及次硬的立方氮化硼（Cubie Boron Nitride或CBN)，已大量用於加工工件或產品。然而前 者在高溫下會與鐵族或碳化金屬反應，故多用於加工非鐵族及 非碳化材質。後者因熱穩定性較高，故可用於加工鑽石不易加 工的鐵族及破化材質β 超級磨料（Superabrasive)是高難度加工及精密加工不可 或缺的材料《目前被使用最廣泛的超級磨料包括最硬的鑽石（ Knoop硬度近loooo {cg/mm2)以及次硬的立方氮化硼（以〇叩 硬度約5000 kg/mm2)。但由於鑽石在高溫〇 6〇〇£>c)下極易 和鐵族金屬（鐵、鈷、鎳及其合金）或易形成碳化物的金屬（ 如欽、鈒、錄等）起反應（包括溶解、化合成碳化物，或被催 化成石墨），因此最硬的鑽石不適於加工這類金屬，而多用以 加工其他材料：包括石村、水泥、碑瓦、玻璃、塑膠、未料、 鋁、銅等金屬。由於鑽石有此應用上的限制，因此次硬的cBN 乃成加工鐵族金屬及易形成碳化物金屬最適合的超級磨料。 現有的超級磨料的外形為粒狀及塊材。前者可混在结合劑 (如金屬、陶瓷、玻璃、樹脂）内製成工具（如鋸齒、鑽頭、 磨輪…等），或形成游離磨料（如拋光用研磨膏）使用。後者 則可附在基材（如超硬合金車刀）或鍍在工件（如鋼製模具） 上使用。 超級磨料常以超高壓（壓力大於五萬個大氣展）技術製造 3 本紙張尺度適用令國國家標隼（CNS)A4規格（210 X 297公釐） ： I --"4·--— — — — — ^- — —— — — — — 1^. (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4439 8 9 Α7 Β7 五、發明說明（J) 。製成的磨料可為單晶的磨粒（Grit，通常為20篩目以細）， 或多晶（Polycrystalline)的塊材》後者常附在以鈷燒結的碳化 鎢（WC/Co)基材上。超級磨料也可以爆炸法製造，製成的磨 料為極細（< 10微米）的微粉。超級磨料也可以低壓的氣相沈 積法製造。製成的產品可為多晶的厚膜（> 10微米）或無晶的 薄膜（< 5微米）。前者常以化學氣相沈積（Chemical Vapor Deposition或CVD)法在較高的溫度（> 600°C)下生長在基材 上。後者多以物理氣相沈積（Physical Vapor Deposition或PVD )法在較低的溫度（<200°C)下披覆在工件上。 各種製造鑽石的方法都有其缺點。例如高壓法因受限於其 產生高壓的腔體太小，因此成本偏高，而且所製的塊材尺寸不 大。更有甚者，高壓法雖可製成多晶的片狀產品，卻無法形成 超硬的薄膜鍍在具複雜曲面的工件上。爆炸法對環境的污染較 大。因此成本也不低》由於產生壓力的瞬間（數微秒）太短， 其製成超硬產品的粒度極小（< 10 μιη)，只能用以拋光工件。 氣相法雖然不用高壓，但其產品只限鑽石膜或類似鑽石的碳膜 (Diamond Like Carbon或DLC )。鑽石膜產品雖已商業化，但 鍍立方氮化硼薄膜的產品卻至今仍未開發成功。 1984年宋健民博士在美國Norton公司建議以極普通的氤 和碳元素化合成自然界所無的氮化碳（C3N4或其他類似化合物 )°宋博士認為此一假想物質可能比鑽石更硬^宋博士的創見 乃引起全球科學家研究此一新興超硬材料的熱潮。近年來有多 所研究單位宣稱已合成出氮化碳〇但因其生長的微晶粒度僅及 次微米’因此硬度是否超越鑽石仍屬未知，但有許多跡象顯示 4 本紙張疋度適用中囷國家標準（CNS〉A4規格（21〇 χ 297公釐） I -------1111_ ^ · I------^ « — — — — — ΙΕ· » (請先閱讀背面之注意事項再填寫本頁) “39 8 9 A7 B7 五、發明說明（彡） 氮化碳的硬度和鑽石相比已不惶多讓。 氮化碳的合成極為困難，即使能生產，所費也不貲。本發 明乃應用晶體化學的原理生長含矽的氮化碳（SixCyNj。這種 氮化碳矽較容易合成’可在甚大的腔體内生產β尤有進者，氮 化碳矽的硬度雖遜於鑽石，卻比立方氮化硼高。此外氮化碳石夕 可承受溫度高至1600°C，這個溫度極限比鑽石的700°C或立方 氣化删的1200C還高很多。因此氮化碳石夕在加工鐵族金屬及易 形成碳化物的金屬’其性能可以超越CBN*由於含有氮化碳石夕 之材料製造的成本較低’在大量生產後也可能取代昂貴的工業 鑽石，甚至和價廉的傳統磨料（碳化矽、氡化鋁）競爭。 氮化碳（C#4)與氮化矽（Si3N4)為異素同形體，具有相 近的結晶構造（可為(X相或β相），因此可能形成範圍寬廣的固 溶區。氮化碳内的碳原子很小，所以氮原子會靠得很近。這些 氮原子因含多餘的電子會彼此相斥，使氮化碳的結構變得不穩 定，以致很難合成。氤化碎因含較大的石夕原子使氮原子隔得較 開’因此降低了氮原子間的斥力，使其結構趨於穩定，穩定的 氮化矽易於合成，其屬於早期常用的精密陶瓷原料，已用於製 造包括汽車引擎活塞閥的工業材料。氮化矽含較大的矽原子， 雖可使其結構穩定，但其硬度卻下滑至氮化碳的四分之一。 根据上述，氮化碳極硬，但極難合成；氮化矽稍軟’但較 易合成。由於這兩者具有相似的結晶構造，彼此可以共溶或穿 插成多種複雜的結構，因此可形成氮化碳和氮化矽的中間產物 一“氮化碳矽’’。氮化碳矽内的碳仍具鑽石鍵結（sp3)，其整 體硬度雖不及鑽石，卻比立方氮化硼硬。由於矽的介入使氮化4439 8 9 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (/) The present invention is a material containing carbon nitride silicon and its manufacturing method, which is a material containing vaporized carbon silicon. High hardness, but can be used as an abrasive, trowel plating on the tool to form a coating, to facilitate the use of cutting tools. Superhard materials, including the hardest diamonds and the second hardest cubic boron nitride (Cubie Boron Nitride or CBN), have been used in large quantities for machining workpieces or products. However, the former will react with iron group or metal carbide at high temperature, so it is mostly used for processing non-ferrous group and non-carbonized materials. The latter has high thermal stability, so it can be used to process diamonds that are not easy to process. Iron and abrasive materials. Β Superabrasive is an indispensable material for difficult and precise machining. "The most widely used superabrasives include The hardest diamond (knoop hardness is near loooo {cg / mm2) and the second hardest cubic boron nitride (about 5000 kg / mm2 at 0 叩 hardness). However, since diamonds are easily reacted with iron group metals (iron, cobalt, nickel and their alloys) or metals that are likely to form carbides (such as Chin, Thallium, Lu, etc.) at high temperatures of £ 600,000 (c). (Including dissolving, chemically forming carbides, or being catalyzed to graphite), so the hardest diamonds are not suitable for processing these metals, and are mostly used to process other materials: including stone villages, cement, monuments, glass, plastics, plastics, aluminum , Copper and other metals. Because diamond has this application limitation, the second hard cBN is the most suitable super abrasive for processing iron group metals and carbide-forming metals. The shape of the existing super abrasives is granular and block. The former can be mixed in a binder (such as metal, ceramic, glass, resin) to make tools (such as saw teeth, drills, grinding wheels, etc.), or used as a free abrasive (such as polishing paste for polishing). The latter can be attached to a substrate (such as a cemented carbide turning tool) or plated on a workpiece (such as a steel mold). Super abrasives are often manufactured using ultra-high pressure (pressure greater than 50,000 atmospheric exhibitions) technology. 3 This paper size is applicable to national standard (CNS) A4 specifications (210 X 297 mm): I-" 4 · ---- — — — — ^-— —— — — — — 1 ^. (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4439 8 9 Α7 Β7 V. Description of the invention (J ). The abrasive can be made of single crystal abrasives (Grit, usually 20 mesh or finer), or polycrystalline blocks. The latter is often attached to tungsten carbide (WC / Co) substrates sintered with cobalt. on. Superabrasives can also be manufactured by the explosive method, and the resulting abrasives are extremely fine (<10 microns) fine powder. Superabrasives can also be made by low-pressure vapor deposition. The finished product can be a polycrystalline thick film (> 10 microns) or an amorphous film (< 5 microns). The former is usually grown on a substrate by a chemical vapor deposition (Chemical Vapor Deposition or CVD) method at a higher temperature (> 600 ° C). The latter is mostly coated on the workpiece with a physical vapor deposition (Physical Vapor Deposition or PVD) method at a lower temperature (< 200 ° C). Various methods of making diamonds have their disadvantages. For example, the high-pressure method is limited because the cavity that generates high pressure is too small, so the cost is high, and the size of the block produced is not large. What's more, although the high-pressure method can make polycrystalline flake products, it can not form a super-hard film and plate it on the workpiece with complicated curved surface. The explosion method has great pollution to the environment. Therefore, the cost is not low. Because the moment (a few microseconds) when the pressure is generated is too short, the particle size of the ultra-hard product is extremely small (<10 μιη), which can only be used to polish the workpiece. Although the gas phase method does not require high pressure, its products are limited to diamond films or diamond-like carbon films (Diamond Like Carbon or DLC). Although diamond film products have been commercialized, cubic boron nitride thin film products have not yet been successfully developed. In 1984, Dr. Song Jianmin proposed to the United States Norton Corporation to synthesize carbon nitride (C3N4 or other similar compounds) that is not found in nature with extremely common rhenium and carbon elements. Dr. Song believed that this hypothetical substance might be harder than diamond ^ Dr. Song's Transcendence is causing an upsurge of global scientists to study this emerging superhard material. In recent years, many research institutes have claimed that carbon nitride has been synthesized. However, it is still unknown whether the hardness exceeds diamonds because of its micro-grain size of only sub-micron. However, there are many indications that 4 papers are suitable for use. National Standard (CNS> A4 Specification (21〇χ 297mm) I ------- 1111_ ^ · I ------ ^ «— — — — — ΙΕ ·» (Please read the note on the back first Please fill in this page again for details) "39 8 9 A7 B7 V. Description of the invention (彡) The hardness of carbon nitride is no less than that of diamond. The synthesis of carbon nitride is extremely difficult, even if it can be produced, it will not cost a lot. The present invention uses the principle of crystal chemistry to grow silicon-containing carbon nitride (SixCyNj. This kind of carbon nitride silicon is easier to synthesize. Β can be produced especially in very large cavities. The hardness of carbon nitride silicon is Inferior to diamond, but higher than cubic boron nitride. In addition, carbonitride can withstand temperatures up to 1600 ° C, this temperature limit is much higher than diamond's 700 ° C or 1200C cubic gasification. Therefore, nitriding Carbon stone Xi in the processing of iron group metals and metals that easily form carbides' performance can exceed CBN * Because of the low cost of manufacturing materials containing carbonitride, it may replace expensive industrial diamonds after mass production, and even compete with cheap traditional abrasives (silicon carbide, aluminum halide). Carbon nitride (C # 4) It is an isotope with silicon nitride (Si3N4) and has a similar crystal structure (can be (X phase or β phase), so it may form a wide range of solid solution regions. The carbon atoms in carbon nitride are very Small, so the nitrogen atoms will be close together. These nitrogen atoms will repel each other because they contain excess electrons, making the structure of carbon nitride unstable, making it difficult to synthesize. Atoms make nitrogen atoms more apart, so the repulsion between nitrogen atoms is reduced, and the structure tends to be stable. Stable silicon nitride is easy to synthesize. It belongs to the early precision ceramic raw materials and has been used in the manufacture of pistons for automobile engines. The industrial material of the valve. Silicon nitride contains large silicon atoms, and although its structure is stable, its hardness has fallen to one quarter of carbon nitride. According to the above, carbon nitride is extremely hard, but it is extremely difficult to synthesize. ; Silicon nitride is slightly softer but easier to synthesize. Because the two have similar crystal structures, they can be dissolved or interspersed with each other to form a variety of complex structures, so the intermediate product of carbon nitride and silicon nitride-"carbon nitride silicon" can be formed. Carbon is still diamond-bonded (sp3). Although its overall hardness is not as good as diamond, it is harder than cubic boron nitride. Nitriding is caused by the intervention of silicon.
S 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 3fc--------訂---------線 經濟部智慧財產局貝工消費合作社印製 經濟部智慧財產局員工消费合作社印製 443989 Α7 Β7 五、發明說明（弘） 破矽易於合成’因此可以大量生產’成為一個全新的超級磨料 。這種超級磨料可製成磨粒或塊材。新的含有氮化碳石夕超硬封 料可取代現有的工業鑽石或cBN’乃至高品位的傳統磨料（例 如多晶氧化銘）。 為使貴審查委員進一步瞭解本發明之製法、用途及其微 结構，茲附以圖式詳細說明如后： (一） 圖式說明： 第一圖：製造本發明含有氮化碳矽磨粒材料的一實施例示意圖 〇 第二圖：製造本發明含有氮化碳矽之材料形成鍵膜的一實施例 示意圖。 第三圖：本發明含有氮化碳矽之材料鍍膜的微結構示意圖。 (二） 圖號部分： (10)鉬底架 （20)矽基板 (3 0 )氮化矽粒子 (3 2 )含氮化碳矽材料之磨粒 (40)鎢絲 （50)碳化鎢刀具 (5 2 )含氮化碳矽材料之鍍膜 本發明含有氮化碳矽之材料’其體積的1/3以上含有氮化 碳矽（SixCyNz)的相（Phase) ’該相的成份含超過90°/。的氮、 破及珍’而Η : 6 本紙張尺度適用中國圉家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝 * I I I ---« - — — — — —-- 4433 8 9 Α7 Β7 五、發明說明（彡 氮原子比率 30-65% 碳原子比率 5-45%，含鑽石铋沾,、 w鍵結（sp3 )的比率超過50% 矽原子比率 5-45% 其他元素 <10%。 前述之氮化射（S丨ANZ)其相的結晶可為單晶或多晶； 前述含妹化射（SiANz)之材料，其相的形狀可為粒 狀、片狀、或塊材； 前述含有氮化碳石夕（SixcA)之持料，其相可為鍵膜； 月述含有氮化碳石夕（SixCyNz)之材料，其相可披覆在粒狀 的金屬或陶瓷上： 剛述含有氮化碳梦（SixCyNz)之材料，其金屬體積的一半 以上為石夕、鐵、鎮、链、欽、招或鎮； 前述含有氮化碳矽（SixCyNz)之材料，其陶瓷體積的一半 以上為碳化鎢、碳化鈦、氮化鈦、碳化矽、氮化矽或氧化鋁； 前述含有氮化碳矽（SixCyNz)之材料，其相可鍍在鈷燒結 的碳化鎢工件上： 前述含有氮化碳矽（SixCyNz)之材料，其鑛膜的厚度< 5〇 μιη 剛述之氮化碳矽（SixCyNz)，其相的原料含ch4、NH3、N2 、h2 ' Si、SiH4、Si (ch3) 4、SiCl4、C 或 c2h5〇h ; 又前述之CH4、NH3、（或N2)、及％的含量各超過1% j 至於合成本發明之含有氮化碳矽（SixCyNz)之材料的熱源 可為電阻、電弧、微波、射頻波、或火焰。 7 本紙張尺度適用令國國家標準（CNS>A4規格（210 >=297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝·---II I 訂-Ρ I ! I I - 經濟部智慧財產局員工消費合作社印製 4439 8 9 A7 B7 五、發明說明（έ) 本發明含有氮化碳矽之材料的用途很廣而且製造方法很多 ，以下僅就三實施例加以說明： 實施例一：含有氮化碳矽（SixCyNz)磨粒的製法及用途。 如第一圖所示，將氮化矽（Si3N4)粒子（3 〇 )(如100/120 篩目）置於一矽基板（2 0 )上’該矽基板（2 〇 )可安置於 一鉬底架（1 Q )上，再放入一含鎢絲（4 〇 )加熱源的反應 腔。當電流通過鎢絲（4 0 )時，溫度會昇高至約2400°C，此 時通入甲烷（CH4)，氨（NH3)，及氫（H2)等氣體（如比率 為10:40:50)’並保持適當的壓力（如601〇〇>)〇這些氣體 會因熱分解而沈積出含碳及氮的化合物。若氮化矽粒子（3 〇 )離鎢絲（4 0 )距離適當（如5mm) ’其溫度可達約1000°c ’此時底部的矽基板（2 〇)會揮發，使腔體内充滿矽的蒸汽 。由於氣體中也充滿解離的氫原子，沈積出來的碳會保持鑽石 的鍵結°這種含鑽石鍵結的碳與氣相中的氮及矽化合即可形成 超硬的氮化碳矽。氮化碳矽會形成多晶沈積在氮化矽（Si3N4) 顆粒的表面’並重重包裹後者以形成一含氮化碳矽材料之磨粒 (3 2)。這種如洋蔥狀的多層磨粒（3 2)與結合劑混合可 製成砂輪，用以加工各種材質及工件。 上述實施例的加熱方式不限於使用鎢絲（4〇)，也可使 用其他能源來分解氣體，例如包括：微波、射頻（Ratli〇 Wave )、電弧、火焰或其他氣相沈積法所用的能源。粒子的原料也 不限於氣化矽’也可用碳化鎢（WC)、碳化矽（SiC)、氧化 銘（AL203)等。 實施例二：含有氮化碳矽（s〖xCyNz)鍍膜的製造及用途。 8 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公爱〉 (請先閱讀背面之注^項再填窝本頁) 裝 ------—訂----I I — I 線 經濟部智慧財產局員工消費合作杜印製 4439 8 經濟部智慧財羞局員工消費合作社印製 A7 B7 五、發明說明（7) 上述實施例一中的氮化矽（Si3N4)粒子（3 0 )改為以鈷 燒結的碳化鎢（WC/Co)刀具（5 0 )(如三角形的捨棄式刀 片），而可如第二圖中所示般在其表面沈積本發明之含有氮化 碳矽之材料。這樣生成的產品為坡覆含氮化碳矽材料之鍍膜（ 5 2)的車刀。目刖車削刀具的大宗為切削鋼材的碳化鎮刀具 。這些刀具的表面常披覆碳化物（如TiC)，或氮化物（如TiN )以提高表面的硬度。錢cBN的刀具目前仍付闕如。由於含有 氮化碳矽之材料的硬度遠超過這些傳統鍍膜，因此其性能會比 傳統刀具優越得多。 實施例三：以電弧内產生的電漿射流化來製造含有氮化碳 矽之材料。 以直流電弧將石墨及氮氣在含矽質的腔體中氣化成電漿， 並在鎳基材上析出含有氮化碳矽之材料的鍍膜》此鍍膜的微結 構見第三圓》這種方法可用以生產本發明之含有氮化碳矽磨粒 或鍍膜。 由以上之說明可知，含有氮化碳矽之材料的用途不僅限於 製成磨料或刀具，也可形成多晶塊材或沈積成薄膜，鍍在上述 實施例中仍未說明的其他工具上（如成形模具、水刀、抽線模 、耐磨件等），舉凡運用本發明之精神作等效取代，或採用簡 單轉用之方式將本發明作變化’而含括在以下申請專利範圍所 界定之範疇中者，均當屬本發明之範圍。 9 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公《 ) (請先閲讀背面之注意事項再填寫本頁) 裝* ------訂·---J ί 線S This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) 3fc -------- Order ------- -Printed by the Shell Property Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by 443989 Α7 Β7 . This super abrasive can be made into abrasive particles or blocks. The new carbonitride-containing superhard sealant can replace existing industrial diamonds or cBN ’or even high-grade traditional abrasives (such as polycrystalline oxide inscriptions). In order to make your reviewing committee better understand the manufacturing method, application and microstructure of the present invention, detailed drawings are attached as follows: (1) Schematic description: First picture: Manufacturing the carbon nitride silicon abrasive grain material of the present invention A schematic diagram of an embodiment of the invention. Second diagram: A schematic diagram of an embodiment of forming a bond film by forming a material containing carbon nitride silicon according to the present invention. FIG. 3 is a schematic diagram of the microstructure of a coating of a material containing carbon nitride silicon according to the present invention. (2) Part number: (10) Molybdenum chassis (20) Silicon substrate (30) Silicon nitride particles (3 2) Abrasive particles containing carbon nitride silicon material (40) Tungsten wire (50) Tungsten carbide tool (5 2) Coating of carbonitride-silicon-containing material The material containing carbonitride-silicon according to the present invention has a phase (SixCyNz) containing more than 1/3 of its volume. ° /. Nitrogen, Broken and Rare: 6 paper sizes are applicable to Chinese Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page) Packing * III --- «-— — — — —-4433 8 9 Α7 Β7 V. Description of the invention (Rhenium nitrogen atom ratio 30-65% carbon atom ratio 5-45%, containing diamond bismuth, w-bonding (sp3) ratio exceeds 50% silicon atomic ratio 5-45% other elements < 10%. The aforementioned crystalline nitride (S 丨 ANZ) phase can be single crystal or polycrystalline; the aforementioned material containing SiANz, which The shape of the phase can be granular, flake, or block material; the phase of the aforementioned material containing carbon nitride (SixcA) can be a key film; the material containing carbon nitride (SixCyNz), Its phase can be coated on granular metal or ceramics: The material just described contains carbon nitride dream (SixCyNz), the metal volume of which is more than half of Shi Xi, iron, town, chain, Qin, Zhao or town; For materials containing silicon nitride (SixCyNz), more than half of the ceramic volume is tungsten carbide, titanium carbide, titanium nitride, silicon carbide, silicon nitride, or aluminum oxide The phase of the aforementioned material containing carbon nitride silicon (SixCyNz) can be plated on a cobalt sintered tungsten carbide workpiece: The thickness of the mineral film of the material containing the aforementioned silicon nitride silicon (SixCyNz) < 5〇μιη just described Carbon nitride silicon (SixCyNz), the raw material of its phase contains ch4, NH3, N2, h2 'Si, SiH4, Si (ch3) 4, SiCl4, C or c2h50 0h; and the aforementioned CH4, NH3, (or N2) And the content of% and more than 1% each. As for the heat source for synthesizing the material containing carbon nitride silicon (SixCyNz) of the present invention, the heat source may be resistance, arc, microwave, radio frequency wave, or flame. 7 This paper's dimensions are applicable to national standards (CNS > A4 specifications (210 > = 297 mm) (Please read the precautions on the back before filling out this page). Install ------ II I Order-P I! II-Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Manufacturing 4439 8 9 A7 B7 V. Description of the Invention (The invention) The material containing silicon carbonitride is widely used and there are many manufacturing methods. Only three examples are described below: Example 1: containing carbonitride silicon ( SixCyNz) method and application of abrasive particles. As shown in the first figure, silicon nitride (Si3N4) particles (30) (such as 100/120 mesh) placed on a silicon substrate (20) 'The silicon substrate (20) can be placed on a molybdenum chassis (1Q), and then a tungsten-containing wire (40) The reaction chamber of the heating source. When the current passes through the tungsten wire (40), the temperature will rise to about 2400 ° C. At this time, methane (CH4), ammonia (NH3), and hydrogen (H2) are introduced. And other gases (such as the ratio of 10:40:50) 'and maintain an appropriate pressure (such as 60100>>) These compounds will be deposited by carbon and nitrogen due to thermal decomposition. If the distance between the silicon nitride particles (30) and the tungsten wire (40) is appropriate (such as 5mm) 'The temperature can reach about 1000 ° c' At this time, the silicon substrate (20) at the bottom will volatilize and fill the cavity. Silicon vapor. Since the gas is also filled with dissociated hydrogen atoms, the deposited carbon will maintain the diamond bond. This diamond-bonded carbon combines with nitrogen and silicon in the gas phase to form a superhard carbonitride silicon. Carbonitride silicon will form polycrystalline deposits on the surface of silicon nitride (Si3N4) particles and heavily wrap the latter to form abrasive grains containing carbonitride silicon materials (32). Such onion-like multilayer abrasive grains (32) can be mixed with a binder to make a grinding wheel, which can be used to process various materials and workpieces. The heating method in the above embodiment is not limited to the use of tungsten wire (40), and other energy sources can be used to decompose the gas, such as: microwave, radio frequency (Ratlio Wave), electric arc, flame, or other energy sources used in vapor deposition. The raw material of the particles is also not limited to silicon carbide. Tungsten carbide (WC), silicon carbide (SiC), oxide (AL203), and the like can also be used. Embodiment 2: Manufacturing and use of a carbon nitride silicon (s [xCyNz) -containing coating film. 8 This paper size applies to China National Standard (CNS) A4 specifications (21〇X 297 public love) (Please read the note ^ on the back before filling in this page). — Consumption cooperation by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by Du 4439 8 Printed by the Consumer Cooperatives of the Bureau of Intellectual Property of the Ministry of Economic Affairs, A7 B7 V. Description of the invention (7) Silicon nitride (Si3N4) particles in the first embodiment ( 30) instead of tungsten carbide (WC / Co) cutters (50) sintered with cobalt (such as triangular discarded inserts), the nitride containing the present invention can be deposited on the surface as shown in the second figure Carbon silicon material. The product thus produced is a turning tool covered with a coating of carbon nitride silicon material (5 2). The majority of turning tools are carbonized town cutting tools for cutting steel. The surface of these tools is often covered with carbonization. Materials (such as TiC), or nitrides (such as TiN) to improve the surface hardness. Qian cBN tools are still exemplified. Since the hardness of materials containing carbon nitride silicon is far beyond these traditional coatings, their performance will be better than traditional The tool is much better. Example 3: The plasma jet generated in the arc is used to A material containing carbonitride silicon is produced. Graphite and nitrogen are gasified into a plasma in a silicon-containing cavity by a direct current arc, and a coating film containing carbonitride silicon material is deposited on a nickel substrate. This method can be used to produce the carbonitride-silicon-containing abrasive grains or coatings of the present invention. As can be seen from the above description, the application of the material containing carbonitride-silicon is not limited to making abrasives or knives. Form a polycrystalline block or deposit into a thin film, and plate it on other tools (such as forming molds, water jets, wire drawing dies, wear-resistant parts, etc.) that have not been described in the above embodiments, and use the spirit of the present invention to be equivalent Instead, or adopting a simple conversion method to change the present invention, and those included in the scope defined by the scope of the patent application below shall fall within the scope of the present invention. 9 This paper standard is applicable to China National Standard (CNS) A4 Specifications （21〇x 297 公 《） (Please read the precautions on the back before filling in this page) Installation * ------ Order · --- J ί Thread