TW441026B - Improved bond-pad with pad edge strengthening structure and single achoring structure - Google Patents

Abstract

A bond pad structure for use in wire bonding applications during the packaging of semiconductor devices with reduced bond pad lift-off problem. The bond pad structure contains: (a) a metal bond pad formed in an open window area surrounded by an edge portion of a dielectric layer; and (b) at least one dendritic sub-structure formed in the edge portion of the dielectric layer. Alternatively, the bond pad structure includes; (a) a laminated structure containing a metal bond pad layer, a dielectric layer, and an underlying layer formed on a wafer surface; and (b) a single anchoring structure formed in said dielectric layer connecting said metal bond pad layer and said underlying layer. The single anchoring structure contains a plurality of line segments that are interconnected so as to form said single anchoring structure. The bond pad structure contains only a single anchoring structure, which can have the geometry of an open or closed ring with whiskers, a coil, an open or closed square-waved ring, a tree structure, a grid-line structure, a meandering structure, a serpentine structure, a spiral structure, or a labyrinth. Furthermore, an array of dendritic sub-structures can be provided extending from an outer edge of the anchoring structure to further improve stability. The dendritic sub-structure serves two main purposes. First, it creates an augmented contact area, and thus enhanced adhesive force, for the bond pad due to the newly created vertically extending contact surface between the metal bond pad layer and the dielectric layer in the dendritic sub-structure. Second, the dendritic sub-structure creates a discontinuity in the edge portion of the dielectric layer which can effectively intercept and thus stop the growth of cracks after they are formed.

Description

441026 V. Description of the invention (1) ~ '---------- The present invention relates to the use of a novel wiring pad with improved yield in semiconductor packaging applications. In particular, the invention relates to a novel connection: pad structure that eliminates or at least reduces the problem of peeling (or peeling) of the wiring pads often encountered during the wiring step during the packaging of integrated circuits, and avoids conventional applications intended for the same purpose. Defects in technology. With the novel wiring pad structure of the present invention, the failure rate that affects the yield due to the peeling of the wiring pad can be substantially reduced without the need for major modifications in the process or equipment. The present invention also relates to a novel process for implementing an improved wiring pad design to increase production yield, so as to reduce the use of a printed circuit board for integrated circuit package fabrication and the novel wiring pad structure disclosed herein or The overall production cost of other integrated circuit packages. During the formation of the printed circuit board or other integrated circuit sealing process, the semiconductor components provided on the printed circuit board can be connected to the outside through a wiring process, respectively. In this process, one or more wiring pads are provided to make contact with individual portions of the outermost conductive layer of the semiconductor element. Then, a bonding wire is bonded to the bonding pad so that the semiconductor element can be electrically connected to the internal wires of the IC package. Generally speaking, the wiring process can be roughly classified into two main types, gold wire / gold ball bonding process and aluminum wire wedge bonding. This aluminum wire wedge-shaped bonding system is widely used in applications where a chip is mounted on a circuit board (C0B), where the aluminum wire is welded to the wedge by ultrasonic vibration and pressure applied to the wedge. On this wiring pad. The gold wire / golden ball bonding process is generally completed at an elevated temperature by squeezing the wire which has been formed into a ball shape on the terminal pad. This aluminum wire wedge bonding process is generally less accurate in establishing the bonding position, and

Page 7 V. Description of the invention (2) It is not uniform when the bonding pressure is applied. Therefore, compared to this gold wire / ball bonding process, it is mainly due to the unevenness of mechanical or thermal stress, which makes it more prone to occur. The problem of flaking. This problem occurs when the adhesion between any adjacent layers in a multilayer semiconductor device is not strong enough to withstand the thermal and mechanical stresses that occur during the bonding process to the bonding pad during the bonding process. . For example, this can occur between a metal bond pad and the underlying polycrystalline silicon layer, between a metal layer and a dielectric layer, between a dielectric layer and a polycrystalline silicon layer, and between a barrier layer and a dielectric layer and many more. In addition to the above discussion, peeling or peeling of bonding pads has been plagued by integrated circuit packaging technology including wiring technology—a major unsolved problem. There are many possible solutions that have been suggested and implemented, with references to customary techniques described below. U.S. Patent No. 4,060,828 discloses a semiconductor device having a multilayer wiring structure having an additional penetration hole in an insulating layer formed under a wiring pad of a wiring layer. Therefore, the purpose of the 828 patent is to provide an additional and protected $ contact between the wiring pad and the other wiring layers below it, so that if the exposed portion of the wiring pad is corroded and disconnected, it will form The additional electrical contact through the insulation layer can still provide the required two patents. The patent does not directly address the problem of wiring fall, but the patent discloses that the insulation layer directly under the metal layer provides a through-hole interconnect structure. The concept has been adopted to deal with the conventional problem of solving the problem of stripping of wiring pads to provide a fixed structure, even if it is the second modified form. Eight mouths P knife county; ^

^ 441026 V. Description of the invention (3) 'US Patent No. 4,981,061 discloses a semiconductor device including a first insulating layer formed on a main surface of a semiconductor substrate having an active region. The first contact hole is formed at a position in the first insulating layer corresponding to the active region, and the first conductive layer is formed in the first contact hole and in a part of the first insulating layer around the contact hole. . After that, a second insulating layer is formed on the first conductive layer and the first insulating layer, and a second contact hole is formed at a position in the second insulating layer corresponding to the first conductive layer and located in the first contact hole. on. Then, a second conductive layer is formed on the first insulating layer and fills the second contact hole. Finally, a wire is connected to the second conductive layer in the area above the first and second contact holes. As for the structure disclosed in the '061 patent, the pressure applied to the second insulating layer during wiring is supported by the columnar structures of the first and second conductive layers filled in the first and second contact holes. Select. U.S. Patent No. 5,309,205 discloses a wiring pad structure formed by depositing a barrier layer on a lower region of a semiconductor device and then depositing a first conductive layer on the barrier layer. Then, a conductive region is defined by patterning and etching the early resistive layer and the conductive layer. In the 1205 patent, the conductive region is formed into a grid shape, and a second conductive layer is deposited on the conductive region and a part of the exposed lower region. This second conductive layer makes a good adhesive contact with this lower layer area, thereby preventing peeling of the bonding pad. U.S. Patent No. 5,248,903 discloses a terminal pad structure that alleviates the problem of terminal pad peeling during wiring by providing a composite terminal pad. This composite wiring pad includes an upper wiring pad and a lower wiring pad.

Page 9 r 441026 5. Description of the invention (4) and in between-insulation elements. Provide at least ―opening through this insulation‖ which extends from the bottom terminal pad to the top connector. The at least-mouth is aligned with a surrounding area of the bottom wiring pad. Then, two materials are provided to fill the plurality of openings' and are electrically connected to the top and bottom. The conductive openings may be a plurality of conductive channels, ring openings extending along the surrounding area, or one or more elongated elongated openings. U.S. Patent No. 5,3G9,025 discloses an improved wiring structure ′ β reduces the problem of electrical peeling of the wiring. The wiring pad disclosed in the No. 25 patent includes a barrier layer, and is formed by first depositing a barrier layer on a lower region of a half-body element and then depositing a first conductive layer on the barrier layer. . Then, the barrier layer and the conductive layer are patterned and etched to define a conductive region. A plurality of conductive regions are formed, and each conductive region is isolated from the outside by forming an isolation sidewall. A second conductive layer is deposited on this conductive region and a portion of the exposed lower layer region. The second conductive layer makes a good adhesive contact with the lower layer region, thereby avoiding peeling of the connection. "US Patent No. 5,707,894 discloses an improved wiring pad structure and a process for forming the same. It can reduce the problem of peeling of the wiring pad between the wiring layer and the lower layer. As disclosed, the method of the 894 patent includes the step of forming a plurality of anchors on the surface of the substrate in the area of the terminal pad. Secondly, a first insulating layer is formed on the surface of the substrate and the fixing pad. A plurality of via holes are formed to pass through the first insulating layer, and are filled with the same material as the second metal layer, so as to cover the first insulating layer, so that a conductive connection bracket and a first metal layer can be formed. This channel has a smaller cross section than the fixed pad

Page 10

V. Description of the invention (5) The cross-sectional area enables the combination of Fuguzu and the first metal layer to form a small η hook in the first insulating layer, so that the second metal layer (that is, wiring) Underlay). U.S. Patent No. 5,8 7 4,3 5 6 discloses a zigzag edge opening in the semiconductor structure A to reduce the film stress in the barrier / adhesive layer of titanium nitride and eliminate volcano defects. Occurred, which caused the delamination or peeling of the titanium nitride from the contact opening. None of the conventional art inventions disclosed above has noticed the cause of the peeling problem of another wiring pad. The co-inventors of the present invention have observed that the peeling problems of the wiring pads are often caused by cracks formed in the corresponding one or more edge portions of the underlying dielectric layer. Once due to the heat during the wiring process? Or mechanical stress causes cracks on some edges of the dielectric layer, and it is distributed along the interface between the metal wiring pad and the dielectric layer ', and finally the wiring pad is detached from the semiconductor element. As the size of this terminal becomes smaller, the problem of peeling of the terminal pad due to crack distribution becomes more serious. Furthermore, most of the inventions discussed above include a plurality of metal-filled holes or channels forming an insulation through the insulating layer underneath the portion of the pad to which the wiring is to be connected, where the temperature can be expected to rise considerably. The plurality of metal-filled channels are not interconnected with each other, except that the top is not directly connected to the metal layer via individual connections. If the multiple metal-filled channels are not properly routed or the wiring is not connected to the designed location, the uneven heat transfer of the metal wiring pads in different metal-filled channels will cause undesired heat Stress issues. U.S. Patent No. 5,248,903 discloses a composite wiring

Page 11 4 41 02 6 V. Description of the invention (6) 环状 A ring-shaped fixed structure between the upper wiring 塾 and the lower wiring pad of the structure d However, 'because of the large distance between the opposite sides of this ring structure, it is unbalanced The heat transfer problem still exists. The main purpose of the present invention is to develop an improved terminal structure for wiring applications during the operation of packaging of integrated circuit components. In particular, the main purpose of the present invention is to develop an improved terminal pad structure which can minimize the problem of peeling and is relatively easy to implement. When the crack has been formed on the edge portion of the dielectric layer adjacent to the wiring pad, the peeling of the wiring pad can be caused. The wiring pad structure of the present invention can stop the growth of the crack. Another advantage derived from the terminal pad structure of the present invention is that it can also eliminate potential unbalanced heat transfer or mechanical stress problems associated with the use of multiple metal-filled fixed structures disclosed in the references of the prior art. In the novel wiring pad structure of the present invention, at least one dendritic sub-structure is formed which extends from the edge portion of the metal wiring pad to the adjacent dielectric layer. From different perspectives, the present invention can be described as forming one or more dendritic penetration holes along the edge of the dielectric layer. The dendritic penetrating holes are then filled with metal material and connected to the edges of the metal wiring pads to form one or more corresponding dendritic substructures. The dendritic substructure of the present invention has two main purposes. First, due to the newly extended contact surface between the metal wiring pad layer and the dielectric layer in the dendritic substructure, it creates an increased contact area for this metal wiring pad and the resulting—adhesion . But more importantly, this dendritic substructure produces discontinuities in the edge portion of the dielectric layer. With proper design, it can effectively prevent and thus stop the cracks that have formed here

Page 12 4 41 02 6 Description of the Five Inventions (7) — One 'One Growth. As previously discussed, crack growth is one of the main causes of peeling of the wiring pads. By stopping the cracks from growing and providing enhanced adhesion, the novel wiring pad design of the present invention has been proven to be more effective in preventing the problem of peeling of the wiring pads than the conventional technical structure. In addition, since the novel wiring pad structure of the present invention does not need to form any channel or fixed structure on the insulating layer in the area under the wiring pad, it can be more easily formed. The advantages of this process will translate into substantial cost savings. The present invention can be advantageously implemented in a wide variety of wiring pad configurations. One example is a simple wiring pad design, where the wiring pad 10 is directly formed on a polycrystalline stone layer 2 'as shown in the first figure. The wiring pad metal layer 1 is generally extended to form a protruding portion 3 on the top of the dielectric layer 4. Because the range of the contact surface (and thus providing adhesion) is extremely limited, when vibration or thermal stress exceeds a certain level,! Will peel off. Most of the customary methods of the freshman, for example, the metal layer discussed earlier does not include the concept of a jack metal wiring layer and extends the dielectric layer to the area directly under the wiring pad, so that multiple channels and fixed Structures can be formed to provide the desired adhesion and resulting stability. In the present invention, at least one dendritic penetrating hole is formed at an edge portion of the dielectric layer, which is connected to and thus becomes an open area (or " Window area "). This dendritic penetrating hole can be formed in the same mask etching step that forms the open area of the electrical contact pad. After that, a wiring pad metal layer is formed by deposition. The dendritic penetrating hole can be used Tungsten plugs to fill or other metals

Page 13 Bu A 41 02 6 V. Description of the invention (8) Material to fill. However, because the width of the dendritic penetration hole is generally very small, the metal material deposited on the side wall of the dendritic penetration hole is generally fused with other metals, so that the entire dendritic substructure is filled to the top surface. During the deposition of the wiring pad metal layer, a protruding portion was also formed on top of the electrical layer at two regions between the dendritic substructure and its upper portion. Since the protruding portion is mostly covered by a protective layer, a planarization process is generally not required. In all the preferred embodiments of the present invention, 'this dendritic substructure has a "ten" shape, with the longer part perpendicular to the edge of the pad and the shorter part parallel to it. This is orthogonal The cross-shaped dendritic substructure is the most effective geometric structure for preventing crack growth, so it can most effectively stop the distribution of cracks in the edge area of the dielectric layer due to high vibration and / or thermal stress during the line process. One contains The array of the plurality of sub-structures can be formed along a part or the entire edge of a single or multiple edges of the wiring pad. If necessary, the second layer of the dendritic sub-structure can be from the first layer The end of the dendritic substructure grows (that is, extends). Another object of the present invention is to develop a fixed wiring pad structure for wiring applications during integrated circuit component packaging operations without introducing any Other necessary problems. In particular, the object of the present invention is to develop a fixed wiring pad structure that minimizes the peeling problem without the problems caused by the fixed structure itself. The invention is better than the second method. It is to eliminate the potential unbalanced heat transfer or mechanical stress problems related to the use of conventional fixed wiring pads, such as isolation and filling. The wiring pads in the present invention Implementation of further structural improvements

441026 V. Description of the invention (9)

In the example, a novel edge-enhanced dendritic substructure is provided, which can provide enhanced adhesion, and can effectively prevent its growth when the crack is formed near the edge portion of the mine. The connection is different from the method of expanding the wiring pad used in conventional technology. In the novel wiring pad structure of the present invention, a single fixed structure is provided, which is buried within a dielectric layer and contacts the lower layer, which can be a metal layer , Polycrystalline silicon layer 'or other non-conductive or semiconductor layer with excellent adhesion to the fixed structure. The single fixing structure disclosed in the present invention includes a plurality of interconnected line segments (which can be a curve or a straight line). The interconnected line segments have the same thickness and generally have the same width. This fixed structure provides a strengthened contact surface with the underlying layer, so this metal terminal pad material provides improved adhesion. In addition, this fixed structure also forms a reinforced contact surface (which extends vertically) between the metal wiring pad structure and the dielectric layer, which can also enhance the adhesion between them. The single fixed structure of the present invention may also have different shapes, such as an open ring structure, a closed ring structure (the rainers all have radial whiskers), a ring or rectangular coil, or an open or closed square. Wave ring '— tree structure, a grid structure, a zigzag structure, a serpentine structure, a spiral structure' a palace structure 'and so on. A key element of the present invention is that the line segments are connected to each other to form a single integrated fixed structure, thereby eliminating the unbalanced heat transfer problem experienced by the multiple fixed structures of the conventional technology. Another advantage of the single-fixed structure of multiple line segments of the present invention is that, ′ due to the different thermal expansion coefficients, the thermal expansion of adjacent line segments of this single-fixed structure will generate a fitting force relative to the closed dielectric layer.

Page 15 V. Description of the invention (10), " — '-

Qiamping f0rce). This mating force also provides a stable force so that the terminal will not fall off during the terminal connection process. In order to form the metal humanoid pad with multiple line segments but a single fixed structure according to the present invention, a dielectric layer is first formed on the surface of the wafer, and the wafer generally includes a two-metal f-polycrystalline rhenium layer or even another insulating layer. The dielectric layer is etched using a conventional micro-etching technique to form a single through-hole having the shape of the fixed structure. After that, it is preferable to fill the through hole with a metal material by metal deposition under the same photoresist. Finally, the photoresist is removed and a metal wiring pad is formed on the fixed structure and a small portion of the dielectric layer. As discussed above, the growth of cracks at the edges of the dielectric layer is one of the main reasons for the peeling of the bonding pads. The present invention can be further improved by fixing one or more dendritic substructures at the edge portion of the fixed structure. This can be accomplished simply by forming one or more dendritic substructures extending from the edges of the fixed structure. Then, a metal material is filled in the dendritic penetrating holes during the deposition of the fixing structure. The present invention will be described in detail by referring to showing a preferred implementation of the present invention, in which:]] the group diagram-is a schematic illustration, showing a side view of a conventional wiring pad structure without solid; ° The second diagram is an example diagram showing a side view of a conventional wiring pad structure with multiple reconstructions; α The third diagram is an example diagram showing the top of an improved wiring pad structure according to the embodiment of the present invention A view, which includes a tree-like substructure array along the four sides of the open area of the wiring pad along the fifth and fifth aspect of the invention (11). The fourth figure is an example of a schematic diagram, which is shown as the third The figure shows a cross-sectional view along line 3-3 ′ along this terminal pad structure; the fifth figure is an example of a schematic diagram, which shows line 4 along this terminal pad structure as shown in the third figure A cross-sectional view at -4 '; The sixth circle is an example diagram showing a cross-sectional view along line 5-5' along the wiring pad structure shown in the third figure; the seventh figure is An illustrative diagram showing a second preferred embodiment according to the present invention An example top view of an improved terminal structure, which includes an array of dendritic substructures along one side of the open area of the terminal pad and outside; three preferred subdivisions along and outside four One end of the five is preferably branched out; the structure can be segmented, and an entire eighth circle of an improved wiring pad junction area of an embodiment is an example of a schematic diagram, which shows the branched second The ninth figure is a structure of the embodiment and has been added from the end of the tree. A part of the tenth figure is an embodiment-the structure is further extended from the eleventh figure to any arbitrary structure array; The shape of the sub-structure is further illustrated as an example of improving the long straight part of the wiring pad. It is an example of the shape. It is a top view of the structure. It includes one side and two adjacent sides. A top view of a structure, in which a longer or shorter portion of the tree branches out; FIG. 'Shows a top view of the structure according to the invention, in which the tree is connected again The intent of the cricket-like part is to show that the dendritic order can include an extension curve 4 4 彳 02 6 V. Description of the invention (12) Extending the straight line segment The twelfth figure is an example of the improved wiring of a single fixed structure. The thirteenth figure is an example of an improvement with a single serpentine fixed structure. The fourteenth figure is an example of the fifteenth example of a single square wave fixed structure. The figure is a sixteenth figure illustrating a single open loop fixing structure. The figure is a modified example illustrating a single tree-like fixing structure. The seventeenth figure is an example illustrating a single coil shape fixing structure. The eighteenth figure is an example. Figure 19 shows a modification of a single grid shape fixing structure. Figure 19 is a plan view illustrating a single spiral shape fixing structure. Figure 20 is a plan view illustrating the same single structure as shown in Figure 13. The dendritic substructure array of the package part; Figure 11 is an example of t connected to this metal wiring pad with the same line segment as shown in Figure 18 Figure, showing the structured side view of the present invention; Intent 'shows a plan view of the wiring pad structure of the present invention: Intent' shows a plan view of the improved wiring pad structure of the present invention; What is intended to show is a plan view of the improved wiring pad structure of the present invention; what is intended to be shown is a plan view of the wiring pad structure of the invention; What is intended to show is a plan view of the present invention with a good wiring structure; What is intended to be shown is a plan view of the improved wiring structure of the invention; The improved wiring pad includes a schematic diagram of the edge extending into the dielectric layer. 'The modified wiring of the grid-shaped fixed structure of the present invention is shown.

Page 18 441026 V. Description of the invention (13) -------- Figure ... It also contains an edge extending into the dielectric layer, a table. Known dendritic substructure array; Figure 12 is a schematic diagram showing an example of an improved wiring pad of the spiral-shaped fixing structure shown in Figure 19 of the invention iii. It also contains an array of dendritic substructures with edge wounds extending into the dielectric layer. Figure 23 is an example diagram showing the present invention having a closed rectangular ring-shaped fixing structure and A plan view of a modified wiring structure of a dendritic substructure array extending into the edge portion of the dielectric layer at a rectangular ring β The main components of the above diagram are as follows: 0: wiring 30a, 301f, 30g, 301h : Dendritic secondary structure 1: Metal layer of wiring pad 4: Dielectric layer 1 0 2: Dielectric layer 101: Under layer 1 6: Protective layer 2 0 1 a: Snake-shaped fixed structure 2 〇1 c: Whisker 2 0 1 e: coil-shaped fixed structure 2 〇1 g: spiral-shaped fixed structure 2: polycrystalline silicon layer 3: protruding part 1 0 3: metal wiring 塾 1 0 4: fixed structure 105: wiring 1 0 7: gold wire / Ball 2 0 1 b: Square wave shape fixed structure 2 0 1 d: Tree-shaped fixed structure 2 0 1 f : Grid-shaped fixed structure 2 01 h: Closed rectangular ring-shaped fixed structure The present invention discloses a novel wiring pad structure for integrated circuit components during wiring operations, which eliminates or at least has been considered

Page 19 V. Description of the invention (14) One of the main reasons for the low production yield is that the problem of wiring pad sag is minimized. The novel wiring pad structure disclosed in the present invention is relatively easy and cost-effective to achieve, and can be applied to a wide range of wiring pad structures, that is, from the simplest to the most complicated. Another advantage of the novel terminal pad structure of the present invention is that, in addition to providing enhanced adhesion, it also eliminates potential unbalanced thermal and mechanical stress problems associated with multi-layered fixed structures designed using conventional techniques' and It is possible to stop the crack growth formed at the edge portion of the dielectric layer adjacent to the wiring pad. The first figure is an example diagram showing a side view of a conventional terminal pad structure without a fixed structure. Unlike many prior art designs, the present invention can be advantageously implemented in a variety of different wiring configurations, from the simplest to the most complex. The first figure shows that a wiring pad 10 is formed directly on a polycrystalline silicon layer 2 to illustrate these elasticities. Generally, the pad metal layer 1 is extended to form a protruding portion 3 on the top portion of the dielectric layer 4 to provide an additional adhesion therebetween. During the wiring operation, cracks will develop under this protruding part. As a result, when the vibration or thermal stress exceeds the limit of adhesion, the metal layer 1 of the wiring pad will peel off.

Page 20 5. Description of the invention (15) 'Intent' It shows a side view of a conventional wiring pad structure with multiple fixing structures. The metal wiring pad 103 is connected to the lower layer via a plurality of fixed structures 104 buried under the dielectric layer 102. During the wiring operation, the heat system is transferred to this fixed structure via wiring 105. As discussed above, 'substantially all of the inventions discussed above include multiple metal-filled holes or channels that form through the insulating layer underneath the portion of the pad to which the wiring is to be attached, where the temperature rise is expected to be comparable High. The multiple gold-layer-filled channels are not connected to each other, except that they are not directly connected to the metal layer on top of them. If the multiple metal-filled channels are not properly laid out or the wiring is not applied at the designed location, uneven heat transfer from the metal wiring pads made by different metal-filled channels will occur β because every place is in accordance with Scale-down, this unbalanced heat transfer will cause undesired thermal stress problems. And uneven heat and / or mechanical stress will lead to the problem of peeling pads. In the Xinlai wiring harness of the present invention, at least one dendritic secondary structure is formed extending from the edge portion of the metal wiring to the adjacent dielectric layer. In the present invention, metal wiring pads are formed to cover various layers, such as a multiple silicon silicon layer, a polycrystalline silicon silicide layer, a dielectric layer, a barrier layer, or another metal layer. The dendritic substructure is formed by first forming one or more dendritic penetrating holes extending inwardly from the edge of the dielectric layer. After that, the dendritic holes are filled with a metal material, and are connected to the edges of the metal wiring pads to form one or more corresponding dendritic secondary structures. As discussed above, in the present invention, at least one dendritic formation is formed

Page 21 ^ 41 Ο 2 q V. Description of the invention (16) Structure on the edge of the dielectric layer # t, 'by deposition; i μ is connected to and is considered to remain stable? It is an extension of the edge or branch of the layer after the wiring. Once or twice in :: dendritic penetrating in the edge of the area ^ deg 1 The phase π sand core of the electrical layer, the stopper penetrating hole is formed by the wiring 塾 open area, and the phase is covered by the silver engraving step form. After that, the wiring 塾 metal layer ―:】 = chemical emulsion phase> redundant formation method. The dendritic substructure can be filled with a metal material, and the rest is subsequently filled with a protective layer. Because the width of the dendritic substructure is very small, it is deposited on the right side of the dendritic substructure. The metal material will be mixed in 1: this becomes the entire dendritic penetrating hole in the dielectric layer completely filled to at least f surface: Another option is to fill this dendritic sub-structure with a crane plug: select the required -An additional step. For the same metal deposition process, the underexposed part of the metal will also be formed on top of the edge part of the dielectric layer that can be made to bury this dendritic society. Because the protruding part is most covered by the structural delta layer, the planarization process is generally not required. Preferably, the dendritic substructure has a " ten, character shape, which is longer perpendicular to the edge of the terminal block and shorter portions are parallel to it. This cross ^ dendritic substructure is better because it is the most effective structure in terms of preventing the growth of cracks, so it can most effectively stop the edge due to the wiring: ^ The high vibration and / or thermal stress of the wiring The growth of cracks formed at the edges of the dielectric layer A ^. If necessary, a second-level tree-like substructure can be formed, extending from the short or long part of the dendritic sub-structure of the first layer. Β depends on the severity of the imposed stress, which may not be needed. 1. The four edges of the terminal block form a dendritic substructure. Only along a single edge. Page 22 4 41 02 6 Five 'Invention Note (π) ~' A part or the entire length of a single edge, or these combined to form a dendritic substructure array in many cases It is also very appropriate. The invention will now be described more clearly by reference to the following examples. The following example descriptions are intended / thinking, including the preferred embodiments of the present invention. The purpose of this description is only for the purpose of illustration and description, rather than to completely or limit the present invention to the precise form disclosed. The schematic diagram shown in Example 1 and Figure 3 shows a top view of an improved wiring pad structure according to a preferred embodiment of the present invention. The outside of the wiring pad and its four sides include a ten-shaped tree-shaped shape. An array of structures 101. Each dendritic substructure has a long segment 102 that is perpendicular to the edge 100 of the wiring pad 100 and a short segment 1u that is parallel to the edge 03 of the wiring pad. The dendritic sub-structure 101 is formed in the dielectric layer i 04. The dendritic sub-structure 101, the dielectric layer 104, and a small edge portion 10 of the wiring pad 105 are the protective layer 106. Covered. A gold wire / ball 107 is bonded to this wiring pad. A dotted line 108 indicates the edge of the protruding portion of the wiring pad 100. This gold wire / ball can also be aluminum The fourth figure is an example of a schematic diagram, which shows a cross-sectional view along the line 3-3 'of the wiring replacement structure as shown in the third figure, which is along the long section 丨 〇2 Stretch. In this example 1, the thickness of the wiring pad is the same as the thickness of the dielectric layer 104. The long section of the structure 丨 〇2 is a simple extension from the edge 100 of the wiring pad 100. The fourth figure shows a small protruding part, which is from the long part of the wiring pad The ends extend to form 'and are deposited on top of the dielectric layer. In this example, the lower layer is a complex

So-the dielectric layer, a barrier 'Miaohua chicken, Shixi Huaxu, etc.) B-day fragmentation layer' However 'as discussed above, it can be a layer, a metal compound layer (such as Nitride or other metal layers) 》 Fifth 圊 is an example schematic diagram, which shows a cross-sectional view along the line 4-4 ′ along the wiring 塾 structure as shown in the third figure, which crosses the short section 111. The metal wiring pad 100 extends from the edge of the wiring pad, fills the penetration hole and is deposited on top of the dielectric layer, so it becomes a part of this protrusion. The sixth diagram is an example of a schematic diagram, which is shown as the third diagram A cross-sectional view is shown along lines 5-5 of the wiring structure. This section is generally the same as shown in the first figure, where the metal wiring pad layer climbs the side wall of the dielectric layer and A protruding portion is formed on the dielectric layer. Since this embodiment of the present invention does not include any fixing structure in the area of the wiring pad, a photoresist for forming a dendritic penetrating hole in the dielectric layer can be used. Remove before the metal layer is refined. This allows the protrusion to form. The photoresist is not removed during metal deposition, so this protruding portion will not be formed. Example 2 The wiring pad structure in Example 2 is the same as Example 1, except that the dendritic substructure is formed along only one side of the wiring pad, such as This is shown in Figure 7. Example 3 The structure of the wiring pad in Example 3 is the same as in Example 1, except that the dendritic substructure is only formed along the wiring pad—the entire side and part of it are formed along its two adjacent sides. As shown in Figure 8. Example 4 of IE

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The ninth figure shows that the dendritic substructure is further branched out by adding a line segment to the end of the dendritic substructure portion of the first layer. The tenth figure shows that the dendritic substructure is extended by adding a serpentine portion to its extended straight portion. The eleventh figure is an example diagram showing that the dendritic substructure may have any shape. The main purpose of this dendritic substructure is to provide an attached extended surface and thereby improve its shear force and create a discontinuity in the edge portion of the dielectric layer to prevent the growth of cracks due to stress. It may include a solid extended curve segment, an extended straight segment, a large portion connected to the metal wiring pad by a straight segment, or a mixture of these. In order to effectively prevent the growth of cracks in a direction perpendicular to the edge of the terminal pad, it is preferable that the dendritic substructure includes at least a straight line segment in a direction parallel to the edge of the terminal pad, in addition to the line segments perpendicular to the edge direction of the terminal pad. This integrated circuit is not necessary because it is a filled single structure formed outside the first fixing. The invention also discloses a fixed wiring pad structure that can be used for wiring applications during the packaging operation of circuit components without introducing other The problem. The advantages of the novel terminal pad structure disclosed in the present invention eliminate the potential unbalanced heat conduction experienced by the isolated multiple gold fixtures used with the conventional terminal pad structure. Furthermore, the fixing structure of the present invention can be modified to provide one or more dendritic shapes, thereby providing additional adhesion and effectively stopping the growth of cracks on the edge portion of the dielectric layer adjacent to the wiring pad. . The twelfth figure is an exemplary diagram showing a side view of an improved junction structure having a single structure 201 according to the present invention. In the present invention

Page 25 441026 V. Description of the invention (20) In novel structure, in the structure, it is different from the expansion wiring of any conventional technology. It provides a single fixed structure, which is buried in the dielectric layer and in contact with the lower layer. A polycrystalline silicon layer or other non-conductive or semiconductor layer that has a good force with metal materials. The single-week structure disclosed in the present invention includes a plurality of interconnected line segments (it can be a curve or a Japanese straight line). The interconnect segments are all of the same thickness and generally have a phase width. This fixed structure provides an enhanced contact surface with the bottom layer, f: improved adhesion to the metal material. In addition, this fixing structure also creates a reinforced contact surface (which extends vertically) between the metal wiring pad structure and the dielectric layer ^ thus also enhancing the adhesion therebetween. 75 ^ The single fixed structure of the invention can also have different shapes, for example: ring structure: a closed ring knot # (both of which have radial M, a ring or rectangular coil, an open or Closed square wave ring, Α structure, a grid structure, a zigzag structure, a serpentine structure,-2 knots, 'a labyrinth structure, etc. The key elements of the present invention are mutual: connection: forming a single whole The fixed structure can eliminate the problem of unbalanced heat transfer experienced by the fixed structure. The multi-segment single-fixed structure of the present invention also has the advantage that the single-fixed structure is caused by the unfixed coefficient. Adjacent line segments ... Expansion will be generated relative to the closed dielectric layer-a mosaic force line system (ForCe). This mating force also provides a stabilizing force so that the connection 塾 will not peel off. ^ In order to properly balance heat transfer, ~ Structure: Must allow multiple obstructions in the direction of radiation (such as a solid structure in the shape of a coil) 'or include multiple pieces in the direction of a light shot

4 41 0 2 6 V. Description of the invention (21) A line segment (such as a ring with whiskers). In order to form a metal terminal with multiple line segments but a single fixed structure according to the present invention, a dielectric layer is first formed on the surface of the wafer. Generally, a metal layer, a polycrystalline silicon layer or even a silicon layer is formed on a silicon substrate Another-insulation. The conventional lithography technique is used to etch the dielectric layer to form a single-through hole having the shape of the fixed structure. After that, Li Jiaojia used the same photoresist to fill the through hole β with metal material by metal deposition and finally removed the photoresist and formed a metal dielectric layer on this fixed structure and a small part of the dielectric layer. . The present invention can be further improved by fixing the edge portion of the structure and using one or more dendritic substructures. It can be done simply by forming one or more dendritic penetration holes extending from the edge portion of the fixed structure. The dendritic penetrating holes are filled with metal material during the deposition of the fixed structure. The present invention will now be explained more specifically by referring to the following examples. Example 5 The thirteenth figure is a schematic diagram showing a plan view of an improved wiring pad structure having a single serpentine fixing structure 20 1 a according to the present invention, which is formed under the metal wiring pad 103 and buried in a dielectric Layers. As discussed above, unlike conventional fixing structures, which always include a plurality of isolated fixtures, the serpentine fixing structure is a single structure containing a plurality of interconnected line segments. Each line segment can be regarded as any part between the curved segments of the fixed structure of this serpentine line segment.

Page 27 4 4102 6 V. Description of the Invention (22) '' Example 6 The fourteenth figure is an example diagram showing a plan view of an improved wiring pad structure having a single square wave shape fixing structure 2 0 1 b according to the present invention. Example 7 The tenth figure is a schematic diagram showing a plan view of an improved wiring pad structure of a single open loop fixing structure having a whisker 2 0 1 c according to the present invention. The whisker allows a better thermal connection to the heat source. Example 8 FIG. 16 is a schematic diagram showing a plan view of an improved wiring pad structure having a single tree-like fixing structure 2 01 d according to the present invention. Example 9 The seventeenth figure is an exemplary circle showing a plan view of an improved wiring pad structure having a single coil shape fixing structure 2 0 e according to the present invention. Example 10 Eighteenth figure is a schematic diagram showing a plan view of an improved wiring pad structure having a single grid-shaped fixed structure 2 0 1 f according to the present invention. Example 1 19 Figure 19 is a schematic diagram showing an example of a modified terminal pad structure with a single-spiral · fixed structure of 20 1 g according to the present invention. This line segment can be like a curved segment in a spiral. Example 12 The tenth diagram is an example diagram showing a plan view of an improved wiring pad structure having the same single serpentine fixing structure 20i as shown in FIG. 13 of the present invention, except that it also contains a Extending into the dielectric layer

Page 28 441026 I — _ V. Description of the invention (23) — Dendritic substructures at the edge 3 〇 丨 a outside the array ^ Example 1 3 The twenty-first circle is an example schematic circle, which shows the invention A plan view of an improved wiring structure having a fixed grid structure 20 1 f of the same grid shape as shown in FIG. 18, in addition to a dendritic substructure 3o f array that extends into the edge portion of the dielectric layer Outside. Example 1 4 The twenty-second figure is a schematic illustration showing a plan view of the improved wiring pad structure of the present invention having the same spiral shape fixing structure 2 o g as shown in the nineteenth figure in addition to a The dendritic substructures extending beyond the 301 g array of edge portions of the dielectric layer. 1ε. Η 1 5 苐 Twenty-three circle is an example schematic diagram, which shows that the present invention has a closed rectangular ring-shaped fixed structure 20oh and a dendritic shape extending from the rectangular ring to the edge of the meso-layer. A plan view of a modified wiring pad junction of the structure 〇 丨 h array. Compared with the improved pad design by conventional techniques, the tree-like substructure of the present invention has two main purposes. First, the extended contact surface along the new 40% of the dendritic substructure results in an enhanced contact area, and therefore enhanced adhesion. But more importantly, this dendritic substructure creates a discontinuity at the edge of the dielectric layer. When properly arranged, it can effectively prevent and thus stop the growth of cracks that have already formed. As discussed previously, the 'crack growth' is the main reason for the problem of peeling pads. By stopping the growth of this crack and providing enhanced adhesion, the present invention

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Five 'Invention Note (24) The novel terminal pad structure has been proven to effectively prevent green problems. In addition, the dendritic substructures disclosed in the present invention can be scrambled, and many structures are involved. For example, it can be added to the structure of the enlarged wiring pad disclosed in this practice. The preferred embodiment of the present invention has been proposed for the purpose of illustration and illustration. Modifications or changes can be apparently made through the hints of the foregoing teaching " preferring and describing the best embodiment to provide the best description of the principles of the present invention and f 1 " so that those skilled in the art can utilize 1 Mingyi It is suitable for specific use cases and can be modified in different ways. However, these modifications and variations are rooted in the following: Ϊ's fairness 'under the limits of legality and fairness' without departing from the spirit of the invention as defined by the scope of the attached patent. ·

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Claims (1)

Wiring for wiring applications 6. Scope of patent application 1. A pad structure used during semiconductor device packaging operations, comprising: a metal wiring pad formed in a window area surrounded by an edge portion of a dielectric layer and Partly formed on the edge part of the dielectric layer; and at least one dendritic sub-structure of D 1 is formed on at least part of the edge of the dielectric layer, and the metal material is violated by at least one dendritic sub-structure. It is formed and extends laterally from below the metal wiring pad. 2. The terminal pad structure according to item 1 of the scope of the patent application, wherein the dendritic substructure includes an extended curve portion, an extended straight portion, an extension portion connected to the metal terminal pad by a straight line portion, a Inclined part 'J-shaped part' L-shaped part or a branch part, or a mixture of these. 3. The terminal pad structure according to item 1 of the scope of patent application, wherein the shape of the metal terminal pad is rectangular and has four edges. 4. The wiring pad structure according to item 3 of the scope of patent application, which comprises at least one array of the dendritic secondary structures formed along at least one edge of the metal wiring pad, respectively. 5. The wiring pad structure according to item 3 of the scope of patent application, which includes a single array of the dendritic substructures formed along the entire edge of the metal · wiring bar. 6. The wiring pad structure described in item 5 of the scope of patent application, further comprising an additional array of the dendritic structure formed at least in part along an adjacent edge of the metal wiring pad. 7. The wiring pad structure according to item j in the scope of patent application, wherein the branch Page 32 4 41 02 6 VI. Scope of patent application The substructure includes a first part and a second part, which are crossed at a predetermined angle greater than 0 degrees but less than 180 degrees. 8. The wiring pad structure according to item 1 of the scope of the patent application, further comprising a ―protruding portion 'extending from the metal wiring pad and covering the edge portion of the dielectric layer. 9. The terminal pad structure as described in item 1 of the scope of the patent application, wherein the dendritic substructure is a cross-shaped structure 'which includes a first Part, and a second part parallel to the edge. ^ 1 0. —A method for forming a pad structure on a wafer for integrated circuits and reducing the problem of the stripping of the pad. The method includes the following steps: forming a dielectric layer on the wafer and covering it; On the following layer: an lithographic technique is used to form an open window region and to form at least one dendritic penetrating hole at the edge portion of the dielectric layer, wherein the at least one dendritic penetrating hole is connected to the open window region ; And: accumulated into the open window area to form a metal wiring pad, in which far metal material is also deposited into the at least one dendritic penetrating hole =: and forming at least one dendrite connected to the gold-like wiring pad The filamentary dendritic penetrating holes described in the second knot item 1G include the following: a tilted t-line part is connected to the metal wiring part, or a mixture of these: J-shaped part, L-shaped part Or a branch 4 4i 02 6 VI. Patent Application ® 1 2. As described in item No. 丨 0 of the scope of patent application. Wiring has four edge potentials ... the method of junction f ', where the shape of the open window area is far from the system. Bonding along the back line of electricity • The method of opening 1 3 _ as described in item 2 of the scope of patent application 'where at least X of the dendritic penetrating hole is formed at least one edge of the open window area 14. The method as described in item 12 of the scope of patent application, wherein the dendritic penetration hole is formed over the entire edge of a single window region. 15. As described in item 14 of the scope of the patent application, as the method of #% branching, wherein the additional array portions of the dendritic penetrating holes are along adjacent edges of the open window area.丨 The method of y as a humming pad soil mouth described in item 0, wherein the dendritic penetrating hole system includes at least _ extending from the first part of the dendritic penetrating hole or one end of the second part. Additional part. 17. The method for making dumpling pads as described in item 10 of the scope of patent application, wherein the step of depositing the metal material into a protruding portion 'its' extends from the metal wiring pad and covers the edge of the electrical layer section. 18. The method for manufacturing the Lulu H mouth as described in item 10 of the scope of patent application, wherein the penetrating hole has a first portion ^ perpendicular to the edge of the open window area connected by the dendritic penetrating hole, and A second part that is parallel to the edge of the open window area. Page 34 υ VI. Patent application scope 19 · An integrated circuit including an improved and reduced stripping of the wiring pad. The wiring structure includes: the gate pad structure of Kasaki 2 genus, which is formed around the edge portion of the dielectric layer. -In an open window area; and ft, a primary structure formed at an edge portion of the dielectric layer, and the gold-layer wiring pads protruded from an edge portion in the open window area. 20. The integrated circuit as described in item 19 of the scope of patent application, wherein the dendritic substructure includes an extended curve portion, a long straight portion, and a large portion connected to the metal # 线 塾 through a straight line portion. Alas,-the oblique part 'J-shaped part, L-shaped part a branch part, or a mixture of these. 21. The integrated circuit according to item 19 of the scope of patent application, wherein the shape of the wiring 塾 is rectangular and has four edges. 2 2 _ The integrated circuit as described in item 21 of the scope of Shenxiang Patent, wherein the wiring pad structure includes at least one array of the dendritic substructures formed along at least one edge of the wiring pad, respectively. 23. The integrated circuit as described in claim 21, wherein the metal wiring pad structure includes a single array of tree-like substructures formed along the entire edge of the wiring pad. 24. The integrated circuit according to item 23 of the scope of patent application, wherein the wiring pad structure further comprises at least one additional array of the dendritic substructures formed partly along an adjacent edge of the wiring pad. 2 5. The integrated circuit as described in item 9 of the patent application scope, wherein the branch Page 35 VI. Application outline, --- ^ _ The state structure includes at least one first part and at least one Π at a predetermined angle greater than 0 degrees but less than 180 degrees: part 'as in the scope of the patent application The integrated circuit according to item 19, human. The structure further includes a protruding portion ′ from the metal wiring pad, the middle and the xuan wiring are rested on the edge portion of the dielectric layer. Extending and 2 7 · The integrated circuit described in item 9 of the scope of the patent application has a sub-structure that is perpendicular to the dendritic sub-knot, with a 塾 -edge, and a percentage of gold with the edge. A pad structure used for wiring applications during semiconductor device packaging operations includes: a wire stack structure including a metal wiring pad layer, a dielectric layer, and a lower layer formed on a wafer; and a single fixed structure. It is formed in the & Hy dielectric layer connected to the metal wiring pad and the lower layer; wherein the single fixed structure includes a plurality of line segments which are connected to each other to form the single fixed structure. 2 9. The wiring pad structure according to item 28 of the scope of patent application, wherein the line segment is a straight line segment or a curved line segment. 30. The wiring pad structure according to item 28 of the scope of patent application, wherein the line & includes a plurality of line segments arranged in a radial direction. 31. The wiring pad structure according to item 28 of the scope of patent application, further comprising a dendritic sub-structure array extending from an outer edge of the fixed structure. 32. The wiring pad structure according to item 28 of the scope of patent application, wherein the fixed Page 36 4 41 02 6 6. Scope of patent application The fixed structure includes an open ring structure or a closed ring structure with multiple whiskers. 3 3. The wiring pad structure according to item 28 of the scope of patent application, wherein the fixed structure includes an open or closed square wave ring structure. 3 4. The wiring pad structure according to item 28 of the scope of patent application, wherein the fixed structure includes a tree structure. 3 5. The wiring pad structure according to item 28 of the scope of patent application, wherein the fixed structure includes a grid structure. 3 6. The wiring pad structure according to item 28 of the scope of patent application, wherein the fixed structure includes a zigzag structure. 37. The wiring pad structure according to item 28 of the scope of patent application, wherein the fixed structure includes a serpentine structure. 38. The wiring pad structure according to item 28 of the scope of patent application, wherein the fixed structure includes a spiral structure. 39. The wiring pad structure according to item 28 of the scope of patent application, wherein the fixed structure includes a labyrinth structure. 40. The wiring pad structure according to item 28 of the scope of the patent application, wherein the lower layer is a polycrystalline layer, a metal layer, or an insulating layer. 41. A method for forming a wiring pad structure on the surface of a wafer to reduce wiring pad peeling problems, the method includes the following steps: forming a dielectric layer on the lower layer above the wafer: using micro Shadowing technology to form a single main perforation in the dielectric layer, wherein the single main perforation includes a plurality of line segments connected to each other to form the single through-hole and arranged in a radial direction; Page 37 'Scope of patent application 6 ^ The fixed structure is connected as described in item 41 of the scope of patent application, depositing a metal material into the single main perforation to form a single fixed structure' which has a plurality of interconnected metals Fill the line segments, and simultaneously or subsequently deposit the metal wiring pad layer on top of the layer and The method of M ^ ^ further includes forming a branch shape penetrating the hole array from an outer edge of the main counter-hole. The method according to item 41 of the scope of patent application, wherein the main penetrating hole has an open or closed loop with a 'hut', a square wave ring with an open or closed loop, and a tree structure ~ Grid structure, a zigzag structure, a serpentine structure 'a spiral, structure or a labyrinth structure geometry. 44 · An integrated circuit package including an improved wiring pad structure that alleviates the problem of peeling of the wiring pad, the wiring pad structure includes:-a laminated structure including a metal wiring pad layer, a dielectric layer, and a lower layer formed on a wafer ; And: a single fixed structure formed in the dielectric layer connected to the metal wiring pad and the underlying layer; wherein the single fixed structure includes a plurality of line segments, which are connected to each other so that = becomes the single fixed structure ' In addition, the line segments are arranged in the radial direction. 6 4 丄 丄 J. According to the integrated circuit package described in item 44 of the scope of patent application, the line segments in the basin are straight line segments. ^ " 46 ’The integrated circuit package described in item 44 of the scope of patent application, wherein Page 38 6. Scope of patent application The line segment is a curved line segment. 4 7. The integrated circuit package according to item 44 of the scope of patent application, wherein the wiring pad structure further comprises an array of dendritic substructures extending outwardly from an outer edge of the fixed structure. 48. The integrated circuit package according to item 44 of the patent application park, wherein the fixed structure has an open or closed ring with a whisker, a coil, and an open or closed square wave ring, A tree structure, a grid structure, a zigzag structure, a serpentine structure, a spiral structure or a labyrinth structure. Page 39