經濟部智慧財產局員工消費合作社印製 438626 μ) Ί ！ L丨ΐ丨丨)2 Α7 _____Β7________五、發明說明（I ) 太發明是有關於一種半導體製程之裝置，且特別是 有關於一種化學液噴頭。 在半導體製程中，噴灑顯影液是影響關鍵尺寸（CD) 均勻性非常重要的參數之一，對於深次微米之光阻言， 圖形大於在光阻接觸顯影液的十二秒即完成定義，故在 噴灑顯影液時’如何讓顯影液於最短時間內塗佈均勻是 相當重要的。習知之顯影液的噴灑幾乎都是以旋轉式噴 灑的方ΐ去來進行^晶圓I 0置放在旋轉器（spinner)上，當 旋轉器帶動晶片旋轉之後，噴灑在晶圓10表面的顯影 液將因爲離心力（centrifugal force)而往晶圓10外圍移 動’而顯影液的厚度除了受顯影液本身之黏滯性 (viscosity)有關外，還與旋轉器的轉速與噴灑顯影液的 噴頭有關。 第1圖習知化學液噴頭與晶圓示意圖，習知常使用 E2噴頭主體12來噴灑顯影液，由於E2噴頭主體12中 所具有一排的噴孔14爲直線狀分佈，且晶圓1〇轉動時， 晶圓10中心點的位移量爲零，而愈靠近晶圃10邊緣之 部位於單位時間內的位移量愈大，使得顯影液透過E2 噴頭主體12上的噴孔14噴灑在晶圓10上時，愈靠近 晶圓10中心點的顯影液愈厚，造成所形成的顯影液的 丨¥度分佈不甲均。這尤其在接近解析度臨限（res〇luti〇n limit)與要求越來越高的關鍵尺寸（critical dimension，簡 稱CD)時，所造成微影成像之圖案誤差會更形明顯。爲 了使乍導體製程技術邁向線寬更窄的技術，均勻分佈顯 (請先閱讀背面之注意事項再填寫本頁) _ ____ 訂---------線— 本紙張尺度適用中國國家標準（CNS)A4規格（21〇x297公釐） 經濟部智慧財產局員工消費合作社印*'1衣 8.-6 2 6 A? _B7 五、發明說明（之） 影液是非常迫切需要的。 綜上所述，習知透過E2噴頭主體噴灑顯影液，以 形成光阻的技術在逼近解析度臨限時會較難控制其關鍵 Kv並且，顯影後之關鍵尺寸均勻性不能滿足現今製 程之要求= 本發明提出一種化學液噴頭，包括有噴頭主體，噴 頭主體上含有排列成類似沙漏狀的複數個噴孔，可以噴灑 均勻厚度的化學液。 . 本發明提出一種化學液噴頭，適用於噴灑顯影液， 包括有噴頭主體，噴頭主體上含有排列成類似沙漏狀的複 數個噴孔，可以噴灑均勻厚度的顯影液。 爲讓本發明之上述和其他目的、特徵、和優點能更 明顯易懂，F文特舉較佳實施例，並配合所附圖式，作詳 細說明如下： 圖式之簡單說明： 第1圖習知化學液噴頭與晶圓示意圖；以及 第2圖是本發明之化學液噴頭與晶圓示意圖。 圖式之標記說明： 1 0、2 0 :晶圓 12、22 :噴頭主體 14、24 :噴孔 實施例 第2圖繪示本發明之化學液噴頭與晶圓示意圖。 請參照第2圖，由於晶圓20轉動時，晶圓20中心 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） • n ί .^1 IV I n m ί * It 填^- (請先閱讀背面之注意事項再填寫本頁) . 線 Α7 經濟部智慧財產局員工消费合作社印製 五、發明說明（多） 點的位移it爲零，而愈靠近晶圓20邊緣之部位於單位 時間內的位移量愈大。因此考慮晶圓2 0上不同部位因 距晶圓20圓心不同而於單位時間內有不同的位移量時， 如欲使化學液可以均勻地噴灑於晶圓20表面，例如噴 灑顯影液，則噴頭必須作進一步修正，使晶圓20任何 部位之單位面積上噴灑有相同體積的顯影液。 請參照第2圖，本發明之長條狀噴頭主體22上所 具有的噴孔24分佈爲類似沙漏狀的圖案，以本發明之 長條狀噴頭主體22對晶圓噴灑化學液時，長條狀噴頭 主體22的中心點係對準晶圓20中心，而長條狀噴頭主 體22所具有的噴孔24之分佈情況由噴頭主體22之中 心點向噴頭主體22的兩端方向逐漸增加，直到最靠近 晶圓2〇邊緣部位之噴孔24數量達到最多。例如長條狀 噴頭主體22最靠近晶圓20中心點的噴孔數量爲0或1， 然後越靠近晶圓20邊緣的噴孔24數量逐漸增加，直到 最罪近晶圓20邊緣部位之噴孔24數量達到4，而使噴 孔24於噴頭主體22上分佈成類似沙漏狀的對稱性圖 案= 因爲考慮晶圓20轉動時晶圓20邊緣部位於單位時 間內的位移量爲最大的情況時，藉由本發明越靠近晶圓 20邊緣部位噴孔24數量愈多的噴頭主體22來噴灑化學 液時’可以得到於整片晶圓20之表面上厚度完全相同 的一層化學液。如所噴灑的化學液爲用P進行微影成像 之顯影液時，則微影成像之圖案不因爲噴灑時顯影液厚 (請先閱讀背面之注意事項再填寫本頁) -I · n n 一 _ n I— n I I n ϋ n iBi an a^i 1_> { n n .^1 If a^i . 本紙張尺度適用中國國家標準（CNS〉A4規格（210 X 297公釐） 438626 A7 V7(S|\v I ll(U- )1()2 a B7 五、發明說明（{) 度之差異而產生誤差’因此適用於要求越來越高的關鍵 尺寸（critical dimension，簡稱CD)之情況，並使半導體 製程技術邁向線寬更窄的技術。 由上述本發明較佳實施例可知，應用本發明可以噴 灑均勻厚度的化學液，如噴灑之化學液爲顯影液，則微 影成像之圖案不因爲一開始噴灑顯影液厚度之差異而產 生誤差。 並且，本發明並不限定於使用噴灑顯影液，任何欲 均勻噴灑於晶圓上的化學液皆可以透過本發明之噴頭來進 行。由於晶圓的轉動速度不同，因此可以配合晶圓轉動速 度來調整噴孔的分佈，如晶圓的轉動速率愈快，則可增加 噴頭主體上愈靠近晶圓邊緣之噴孔數目，如此依所需情況 作調整，使化學液得以於晶圓表面作最均勻的分佈。 雖然本發明以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍內，當可作各種之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者爲準。 — ΐιιι—1 — — — — — * -III — — — — - — 111— — — — I^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消费合作社印製 6 本紙張尺度適用中國國家標準（CNS>A4现格（210 * 297公釐〉Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 438626 μ) Ί! L 丨 ΐ 丨 丨) 2 Α7 _____ Β7 ________ V. Description of the Invention (I) The invention is about a device for semiconductor manufacturing process, and especially about a chemical liquid nozzle. In the semiconductor process, spraying the developer is one of the very important parameters affecting the uniformity of the critical dimension (CD). For deep submicron photoresistance, the pattern is larger than twelve seconds after the photoresist contacts the developer. The definition is complete, so When spraying the developer, it is important to 'make the developer uniformly coated in the shortest time. Conventional spraying of the developer is almost carried out by a rotary spray method. The wafer I 0 is placed on a spinner. After the spinner drives the wafer to rotate, the developer sprayed on the surface of the wafer 10 is developed. The liquid will move to the periphery of the wafer 10 due to centrifugal force, and the thickness of the developing solution is related to the viscosity of the developing solution, as well as the rotation speed of the spinner and the nozzle that sprays the developing solution. Figure 1 is a schematic diagram of a conventional chemical liquid spray head and wafer. It is common to use an E2 head body 12 to spray the developer solution. Because the E2 head body 12 has a row of nozzle holes 14 arranged linearly, and the wafer 1 During the rotation, the displacement amount of the center point of the wafer 10 is zero, and the closer to the edge of the wafer garden 10 is, the greater the displacement amount is in a unit time, so that the developer is sprayed on the wafer through the nozzle holes 14 on the E2 head body 12 When it is 10, the developer solution that is closer to the center point of the wafer 10 is thicker, resulting in uneven distribution of the developer solution. This is especially true when the resolution limit and the critical dimension (critical dimension (CD)) which are increasingly demanding are increased, and the pattern error caused by lithography imaging will become more apparent. In order to make the first conductor process technology move to a narrower line width technology, the distribution is evenly displayed (please read the precautions on the back before filling this page) _ ____ Order --------- Line — This paper scale applies to China National Standard (CNS) A4 Specification (21 × 297 mm) Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs * '1 clothing 8.-6 2 6 A? _B7 V. Description of the Invention (the) Film is very urgently needed . In summary, it is known that the technique of spraying the developer through the main body of the E2 head to form a photoresist will make it difficult to control its critical Kv when approaching the resolution threshold, and the critical size uniformity after development cannot meet the requirements of the current process = The invention provides a chemical liquid spray head, which includes a spray head body, and the spray head body includes a plurality of spray holes arranged in an hourglass shape, which can spray a chemical liquid with a uniform thickness. The present invention provides a chemical liquid spray head, which is suitable for spraying a developer, and includes a spray head body. The spray head body includes a plurality of spray holes arranged in an hourglass-like shape, which can spray a developing liquid of uniform thickness. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, F text specifically presents a preferred embodiment, and in conjunction with the accompanying drawings, the detailed description is as follows: Brief description of the drawings: FIG. 1 A schematic view of a conventional chemical liquid ejection head and a wafer; and FIG. 2 is a schematic view of a chemical liquid ejection head and a wafer of the present invention. Explanation of the marks in the drawings: 1 0, 2 0: wafer 12, 22: nozzle body 14, 24: nozzle hole Embodiment 2 The schematic diagram of the chemical liquid nozzle and wafer of the present invention is shown in the second figure. Please refer to Figure 2. As the wafer 20 rotates, the paper size of the center of the wafer 20 applies the Chinese National Standard (CNS) A4 (210 X 297 mm) • n ί. ^ 1 IV I nm ί * It is filled in ^ -(Please read the precautions on the back before filling this page). Line A7 Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 5. Description of the Invention (Multiple) The displacement of the point it is zero, and the closer it is to the edge of the wafer 20 The greater the amount of displacement in a unit time. Therefore, when different positions on the wafer 20 are different from the center of the wafer 20 and have different displacements in a unit time, if the chemical liquid can be sprayed uniformly on the surface of the wafer 20, such as spraying the developer, the nozzle Further corrections must be made so that the same volume of developer is sprayed on a unit area of any part of the wafer 20. Referring to FIG. 2, the nozzle holes 24 on the elongated nozzle body 22 of the present invention are distributed in an hourglass-like pattern. When spraying chemical liquid on a wafer with the elongated nozzle body 22 of the present invention, the strips are elongated. The center point of the head body 22 is aligned with the center of the wafer 20, and the distribution of the nozzle holes 24 in the strip head body 22 gradually increases from the center point of the head body 22 to the ends of the head body 22 until The number of nozzle holes 24 closest to the edge of the wafer 20 reached the maximum. For example, the number of nozzle holes of the long nozzle body 22 closest to the center of the wafer 20 is 0 or 1, and then the number of nozzle holes 24 closer to the edge of the wafer 20 gradually increases until the nozzle holes closest to the edge of the wafer 20 When the number of 24 reaches 4, and the nozzle holes 24 are distributed in an hourglass-like symmetrical pattern on the nozzle body 22 = because when the displacement amount of the edge portion of the wafer 20 in the unit time is the largest when the wafer 20 is rotated, When the chemical liquid is sprayed by the nozzle body 22 with a larger number of nozzle holes 24 closer to the edge portion of the wafer 20 of the present invention, a layer of chemical liquid having the same thickness on the entire surface of the wafer 20 can be obtained. If the sprayed chemical liquid is a developer for lithographic imaging with P, the pattern of lithographic imaging is not due to the thickness of the developer during spraying (please read the precautions on the back before filling this page) -I · nn 一 _ n I— n II n ϋ n iBi an a ^ i 1_ > {nn. ^ 1 If a ^ i. This paper size applies to Chinese national standards (CNS> A4 size (210 X 297 mm) 438626 A7 V7 (S | \ v I ll (U-) 1 () 2 a B7 5. The description of the invention (the difference between the degrees of ({) causes an error '). Therefore, it is applicable to the situation where the critical dimension (CD) is increasingly required, and The technology for making semiconductor process technology to a narrower line width. According to the above-mentioned preferred embodiments of the present invention, it can be known that the application of the present invention can spray a chemical liquid of a uniform thickness. The error occurs due to the difference in the thickness of the developer spray at the beginning. Moreover, the present invention is not limited to the use of spray developer, any chemical liquid to be uniformly sprayed on the wafer can be carried out by the spray head of the present invention. Different rotation speeds, so it can be matched Circular rotation speed to adjust the distribution of nozzle holes. If the wafer rotation speed is faster, the number of nozzle holes on the nozzle body closer to the edge of the wafer can be increased. This can be adjusted as needed to allow the chemical liquid to pass through the wafer. The surface is most uniformly distributed. Although the present invention is disclosed as above with the preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various changes without departing from the spirit and scope of the present invention. And retouching, so the protection scope of the present invention shall be determined by the scope of the attached patent application. — Ϊ́ιιι—1 — — — — — * -III — — — — — — 111 — — — — I ^ (Please (Please read the notes on the back before filling in this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6 This paper size applies to Chinese national standards (CNS > A4 now standard (210 * 297 mm>