44294 Ο Α7 經濟部智慧財產局員工消費合作社印製 5 662twf.doc/008 Β7 五、發明說明（/ ) 本發明是有關於一種積體電路的設計，且特別是有關 於一種可使對準標記結構完整的位置設計。 微影（photolithography )，是製造半導體元件成敗與否 的關鏈步驟，故其在半導體製程中，佔著舉足輕重的地位。 以一般製作元件的製程爲例，通常一個產品依其複雜性的 不同，所需要的微影製程約在10至18次左右。爲使光罩 的圖案能正確的轉移到晶片上，在半導體製程中，每一次 執行微影製程之光阻曝光步驟之前，必須先找到對準標 記，做好和前一層圖案的對準工作，以避免不當的圖案轉 移，而導致整個晶片報廢。 對準標記主要是利用晶片表面之高低起伏，以在進行 對準時形成入射光的散射場（scattering site)或繞射邊緣 (diffraction edge)。然後以對準標記上所反射的繞射光作 爲對準訊號，經由重疊偵測機來接收之，而達到對準的目 的。 一般對準標記是位在切割道上，且是和淺溝渠隔離結 構同時製造的。因此在淺溝渠隔離製程之最後一個步驟 時，亦即進行化學機械硏磨時，對準標記會受到周圍構造 型態（topology)的影響，而產生不同程度的磨損。若磨損 太嚴重，重疊偵測機無法偵測到淸楚的對準信號，則會導 致對準不良（misalignment)的情況發生。 切割道依方向不同可分爲X方向與Y方向。通常Y 方向切割道上之對準標記周圍有大片的平坦區域，而X方 向切割道上之對準標記常常有大面積的溝渠構造。當使用 3 (請先閱讀背面之注意事項再填寫本頁)44294 Ο Α7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5 662twf.doc / 008 Β7 V. Description of the Invention (/) The present invention relates to the design of an integrated circuit, and in particular to an alignment mark Structurally complete location design. Lithography (photolithography) is a chain-linking step for the success or failure of manufacturing semiconductor components, so it plays a pivotal role in the semiconductor manufacturing process. Taking the manufacturing process of general components as an example, usually a product requires about 10 to 18 lithographic processes depending on its complexity. In order for the photomask pattern to be correctly transferred to the wafer, in the semiconductor process, before performing the photoresist exposure step of the lithography process, it is necessary to find the alignment mark and perform the alignment with the previous layer pattern. To avoid improper pattern transfer, the entire wafer is scrapped. The alignment mark mainly uses the fluctuation of the surface of the wafer to form a scattering site or diffraction edge of incident light during alignment. Then, the diffracted light reflected on the alignment mark is used as an alignment signal, and it is received by the overlap detector to achieve the purpose of alignment. Generally, the alignment mark is located on the cutting line and is manufactured at the same time as the shallow trench isolation structure. Therefore, in the last step of the shallow trench isolation process, that is, when performing chemical mechanical honing, the alignment marks will be affected by the surrounding topology and cause different degrees of wear. If the wear is too severe, the overlay detector cannot detect a good alignment signal, which will cause misalignment. The cutting path can be divided into X direction and Y direction according to different directions. Usually, there are large flat areas around the alignment marks on the Y-direction cutting path, and the alignment marks on the X-direction cutting path often have a large area trench structure. When using 3 (Please read the notes on the back before filling this page)
/ 裝___I I 訂----- 線- 本紙張尺度適用中囯國家標準<CNS〉A4規格（210 X 297公釐） 4 Ο 5662twf.doc/008 Α7 Β7 五、發明說明（>) 步進機(stepper)與KLA重疊機來檢測上下相鄰兩層之對準 結果時’所測得之X方向與Y方向上的誤差値，兹選擇 一些代表性的數値列於下表：。 _^ m_ KLA t -------------1 歐疊機 -.-. X(3 sisma> ΥΓ3 siema") X max Y max 1.526 0.014 0.707 0.044 1.572 0.018 1.330 0.105 — 1.395 0.015 1.085 0.050 0.842 0.024 0.744 0.051 ..... (請先閲讀背面之注意事項再填寫本頁) • _^i 1· 經濟部智慧財產局員工消費合作社印製 由上表可知，利用X方向上對準標記來進行對準所 得的對準誤差遠大於Y方向上的對準標記。 根據上述，本發明提出一種對準標記的位置設計，以 解決由任何化學機械硏磨所引起之對準標記的磨損問題， 使得對準標記之光繞射現象明顯，讓重疊偵測機可以接收 到淸楚的對準標記訊號，以提高對準的精確度，因而增加 所轉移之相鄰上下兩層光罩圖案的重疊(overlay)準確度。 依照本發明一較佳實施例，基底上之對準標記係由多 個凹槽所構成。若在基底上形成其他任何溝渠的構造時(例 如淺溝渠隔離），此溝渠和對準標記彼此之間的距離須至 少爲對準標記相鄰凹槽間之間距的五倍。 如此在淺溝渠隔離製程之後續沈積絕緣層於基底上， 並利用化學機械硏磨法進行全面平坦化時，才不會因爲溝 4 ----訂-----/ Install ___I I order ----- line-This paper size applies to Chinese national standard < CNS> A4 size (210 X 297 mm) 4 〇 5662twf.doc / 008 Α7 Β7 V. Description of the invention (>) A stepper and a KLA overlap machine are used to detect the errors in the X and Y directions when the alignment results of the two adjacent layers above and below are measured. Some representative numbers are selected in the table below: . _ ^ m_ KLA t ------------- 1 Euclid -.-. X (3 sisma > ΥΓ3 siema ") X max Y max 1.526 0.014 0.707 0.044 1.572 0.018 1.330 0.105 — 1.395 0.015 1.085 0.050 0.842 0.024 0.744 0.051 ..... (Please read the notes on the back before filling out this page) • _ ^ i 1 · Printed by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The alignment error obtained by aligning the marks accurately is much larger than the alignment marks in the Y direction. According to the above, the present invention proposes a position design of the alignment mark to solve the problem of the wear of the alignment mark caused by any chemical mechanical honing, so that the light diffraction phenomenon of the alignment mark is obvious, so that the overlap detection machine can receive To the precise alignment mark signal to improve the accuracy of the alignment, thereby increasing the overlay accuracy of the transferred upper and lower two-layer mask patterns. According to a preferred embodiment of the present invention, the alignment mark on the substrate is composed of a plurality of grooves. If any other trench structure is formed on the substrate (such as shallow trench isolation), the distance between the trench and the alignment mark must be at least five times the distance between adjacent grooves of the alignment mark. In this way, when an insulating layer is deposited on the substrate in the subsequent process of the shallow trench isolation process, and the chemical mechanical honing method is used to comprehensively planarize, it will not be caused by the trench 4 ---- Order -----
I Bt I 線' 用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 d429 4 Ο A7 5662twf.doc/008 B7 五、發明說明（>) 渠和對準標記間之拓樸關係而磨損對準標記之凹槽結構， 使對準標記提供淸楚的對準訊號。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 圖式之簡單說明： 第1圖所繪示爲依照本發明一較佳實施例的一種對準 標記位置設計之上視圖。 圖式之標記說明： 100 :基底 106 :對準標記 106a :凹槽 106b :凹槽間之平坦區域 110 :溝渠 D:溝渠與對準標記凹槽間之距離 d:相鄰凹槽之間距 實施例 由上述習知之表一數據顯示，不論使用步進機或KLA 機器檢測重疊結果，Y方向的重疊誤差値皆趨近於零，而 相對應的X方向的重疊誤差値皆遠大於Y値。 由以上重疊誤差檢測結果可以推斷若在基底上形成任 何溝渠的構造，不能和對準標記距離太近，以免在進行化 學機械硏磨時，對準標記會被磨損。 請參照第1圖，第1圖所繪示爲依照本發明一較佳實 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) -------------裝.--------訂---------線 1 /V (請先閱讀背面之注意事項再填寫本頁) A7 B7 5 662twf.d〇c/008 五、發明說明) 施例的一種對準標記位置設計之上視圖。基底100上之對 準標記106，是由多個凹槽106a與凹槽間之平坦區域106b 所構成的。其凹槽l〇6a的寬度例如約爲2 μιη至6 μπι， 而凹槽106a間之平坦區域l〇6b的寬度爲d，d値例如約 爲 6 μηι 至 12 μηι。 .基底100上形成有另一個溝渠其與對準標記 間之距離爲D。溝渠110與對準標記1〇6間之距離D須至 少爲對準標記106之凹槽間平坦區域l〇6b寬度d的5倍。 當符合上述D至少爲d之5倍的要求時，在使用化 學機械硏磨法來進行全面平坦化的步驟’才不會磨損對準 標記106之凹槽106a側壁的上緣，因而造成入射光的散 射。如此一來，對準標記才能提供淸楚的對準訊號，以充 分發揮其提供淸楚對準訊號的功能。 根據上述，本發明所提出之一種對準標記的位置設 計，可以解決由任何化學機械硏磨所引起的對準標記結構 的磨損問題。如此可使得對準標記之光繞射現象明顯，以 提供淸楚的對準訊號給重疊偵測機’使對準精確度可以大 幅提升。 所以不管在基底上形成任何的溝渠結構，其與對準標 記間之距離須至少爲對準標記相鄰凹槽間平坦區域寬度之 五倍。如此，當基底壓在化學硏磨機台之富有彈性的硏磨 墊之表面上時，則硏磨墊在對準標記附近的區域可以保持 平坦，所以不會磨損對準標記凹槽側壁靠近基底表面之上 緣。 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) /農------訂---- 線 經濟部智慧財產局員工消費合作社印製 44294 Ο Α7 5 662twf.doc/008 Β7 五、發明說明（ί) 因此應用本發明，至少具有使對準標記結構完整，以 提供淸楚對準訊號的優點。如此上下兩層所轉移之微影圖 案，才能有良好的重疊性，以大幅增加產品之良率，提高 產能。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 (請先閲讀背面之注意事項再填窝本頁) 襄I Bt I Line 'Printed in accordance with China National Standard (CNS) A4 (210 X 297 mm) d429 4 Ο A7 5662twf.doc / 008 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The topological relationship with the alignment mark and the groove structure of the alignment mark are worn, so that the alignment mark provides a good alignment signal. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description as follows: Brief description of the drawings: FIG. 1 A top view of an alignment mark position design according to a preferred embodiment of the present invention is shown. Explanation of the marks of the drawings: 100: substrate 106: alignment mark 106a: groove 106b: flat area between the grooves 110: trench D: distance between the trench and the alignment mark groove d: distance between adjacent grooves For example, the table 1 data shown above shows that no matter whether the stepper or KLA machine is used to detect the overlap result, the overlap error 値 in the Y direction approaches zero, and the corresponding overlap error X in the X direction is much larger than Y 値. It can be inferred from the results of the above overlapping error detection that if any trench structure is formed on the substrate, it cannot be too close to the alignment mark, so as not to cause the alignment mark to be worn during chemical mechanical honing. Please refer to Figure 1. Figure 1 shows a good practice according to the present invention. 5 The paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm). ---------- --- Install .-------- Order --------- Line 1 / V (Please read the precautions on the back before filling this page) A7 B7 5 662twf.d〇c / 008 5. Description of the invention) A top view of an alignment mark position design of the embodiment. The alignment mark 106 on the substrate 100 is composed of a plurality of grooves 106a and a flat area 106b between the grooves. The width of the groove 106a is, for example, about 2 μm to 6 μm, and the width of the flat area 106b between the grooves 106a is d, and d 値 is, for example, about 6 μm to 12 μm. The substrate 100 is formed with another trench whose distance from the alignment mark is D. The distance D between the trench 110 and the alignment mark 106 must be at least five times the width d of the flat area 106b between the grooves of the alignment mark 106. When the above-mentioned requirement of D is at least 5 times of d, in the step of comprehensive planarization using a chemical mechanical honing method, the upper edge of the sidewall of the groove 106a of the alignment mark 106 will not be worn, thereby causing incident light. Of scattering. In this way, the alignment mark can provide a good alignment signal, so as to give full play to its function of providing a good alignment signal. According to the above, the position design of the alignment mark proposed by the present invention can solve the problem of wear of the alignment mark structure caused by any chemical mechanical honing. In this way, the light diffraction phenomenon of the alignment mark can be made obvious, so as to provide a good alignment signal to the overlap detection machine ', so that the alignment accuracy can be greatly improved. Therefore, regardless of the formation of any trench structure on the substrate, the distance from the alignment mark must be at least five times the width of the flat area between adjacent grooves of the alignment mark. In this way, when the substrate is pressed against the surface of the elastic honing pad of the chemical honing machine table, the area of the honing pad near the alignment mark can be kept flat, so the sidewall of the groove of the alignment mark will not be worn near the substrate. The upper edge of the surface. 6 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Property Bureau 44294 〇 Α7 5 662twf.doc / 008 Β7 V. Description of the invention (ί) Therefore, the application of the present invention has at least the completeness of the structure of the alignment mark to provide the advantage of a good alignment signal. In this way, the lithographic patterns transferred from the upper and lower layers can have good overlap, which can greatly increase the yield of the product and increase the production capacity. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. (Please read the notes on the back before filling this page) Xiang
— II I 訂 111 I 線 經濟部智慧財產局員工消費合作社印製 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）— II I order 111 I line Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 7 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)