經濟部中央標準局員工消費合作社印家 43692 9 . . A7 B7 五、發明説明（'） [發明所靨之技術領域] 本發明係Μ於半導髖技術，尤其是關於半導贈元件之 澈细圖型間隙之形成方法。 [習用技術] 藉Μ半導體元件的高集成化構成半専體元件的個別_ 型被撤细化，對照誤排列的埸合其製程限度也滅少著。 一般而言，半専體元件的圖形形成雖係經過使用光阻 的半版印刷工程而成.但現在被商業化的安定製程可能 裝造的最小尺寸，乃是透過使用波長（λ )248nm的KrF光 源曝光化學放大型紫外線（DUV)光阻的方法而獲得的0.25 /i m °Employees 'Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs, India 43692 9.. A7 B7 V. Description of the Invention (') [Technical Field of the Invention] The present invention is based on the technology of semiconducting hips, especially the components of semiconducting gifts. How to form a fine pattern gap. [Conventional technology] By combining the high integration of the M semiconductor elements, the individual types of the semi-corporeal elements are removed and refined, and the process limits of the misaligned elements are also reduced. Generally speaking, although the pattern formation of a half-body element is made by a half-printing process using a photoresist, the smallest size currently available for commercialization of custom-made processes is through the use of wavelength (λ) 248nm. KrF light source exposed by chemically amplified ultraviolet (DUV) photoresist method by 0.25 / im °
這該當於K r F光源折像度的界限，使用K r F光源欲安定 地形成0.25μιβΜ下的微细圖型，因波長的界限而可K 說嫌不可能。 所附加的第la_及第lb_偁有闞習用技術為査究手段 印刷製程的電子顯微鏡（SEM)照片。 首先，第la匾係表示為使巳形成於其下部的聚矽膜圖 型化而形成了光阻圖型的狀態，第U圖係表示將光姐画 型作為蝕刻阻擋暦而被圖型化的聚矽膜剖面之電子顯微 鏡（SEM)的照片。 如圖所示，可明白光阻圖型和靨於蝕刻對象層的聚矽 膜其線寛係2200A,形成為幾乎相同（具有這種2200A線寬 的臛型形成雖可在實驗上達成，但在實際製程上K具有 安定且重複再現性的狀庀獲得者幾乎是不可能）。 ~ 3 " 本紙張尺度適用中國國家標隼（CNS ) A4規格（2丨OX297公釐） ---------¾丨；-----ΐτ---L--——線 (請先閲讀背面之注意事項再填寫本頁) 經漓部中央標率局貝工消費合作社印聚 43692 9 A7 B7 五、發明説明（> ) 0.25w m的DRAM製程的場合，作為克服更新（refresh) 特性和接《孔形成時的製程限度不足的一棰方法，乃使 了形成被連接於接合層的自我排列襯墊，透過後讀接觸 孔形成時自我排列襯墊連接而成的方法。 所添附的第2a圖至第2c_係圓示有關習用技術的自我 排列接觸形成製程。 首先第2a_係在矽基板（10)上透過一連串電晶體形成 製程.對於形成了具備側壁隔板（11)及屏蔽氧化膜（12) 的閘極（13)整體下部構造，蒸鍍自我排列襯墊用聚矽膜 (14)及反射防止用氮化膜（15),表示為在其上部形成自 我排列襯墊所需而光姐匾型（16)被肜成的狀態。 此時，Μ虛線為基準表示在右側確保光姐圖型（16)間 的間隙0.25 ubK上的狀態，Μ虚線為基準假定在左側具 有光1¾圖型（16)間的間隙0.25« m Μ下時，因曝光源的折 像度界限而未正確形成了光阻圖型（16)(Α部份）。 接著，第2b圖係表示使用光阻圖型（16>選擇蝕刻氮化 膜（15)及聚矽膜（14)及形成自我排列襯墊，去除光阻圖 型（16)M後，在全體構造上部形成層間絕緣膜（17)的吠 態。 第2c圖係圖示著表示因在自我排列襯墊上位元線（18) 及電荷儲存電極（19)被接觴的狀態，因在第2a圖的A部 份並未正確形成光姐圓型（16)而引發自我排列襯墊間的 電橋（B部份）。 而且，如欲充份確保光姐圖型（16)間隙時，會減少自 本紙張尺度適用中國圉家標準（CNS ) A4規格（210X29?公釐） ---------^------^------線 (諳先閱讀背面之注意事項再填寫本頁〕 ^36929 A7 B7 經漪部中央標率局員工消費合作社印聚 五、發明説明（々 ) 1 1 我 排 列 襯 墊 的 線 寬 (參閱第2 圖的SEM照 片 )又降低重β 1 1 限 度 » 因 而 > 實 有 閘 掻 (13)和 自 我 排 列 襯 墊 間 的 電 橋 ( 1 C部份）被 引 發 的 可 能 性 大 的 問 題 〇 請 1 1 圖式符號20係表示層間絕緣膜 〇 此 作 為 克 服 m 著 閲 1 背 1 丰 版 印 刷 工 程 折 像 度 界 限 問 題 的 下 — 世 代 新 技 術 i 雖 已 ώ 之 1 有 Μ 曝 光 源 使 用 X 光 線 的 平 版 印 刷 技 術 > 但 尚 無 為 實 施 意 1 事 1 該 工 程 而 被 商 業 化 的 裝 備 等 t 尚 有 許 多 技 術 上 的 限 制 0 項 再 1 I 如 上 所 述 i 直 到 現 在 尚 無 使 用 光 阻 可 安 定 地 形 成 〇. 25 填 % 1 裝 U 下的微细匾型的技術 頁 I 雖 在 美 画 專 利 5， 476 , 807號揭示著， 利用CF4及 chf3 氣 1 I 體 將 聚 合 物 形 成 於 光 阻 圖 型 作 為 蝕 刻 屏 蔽 使 用 ， 但 由 於 1 1 該 聚 合 物 在 以 後 的 蝕 刻 製 程 未 能 具 有 充 份 的 酎 久 性 > 故 i 訂 1 | 實 有 未 能 完 成 作 為 蝕 刻 角 色 的 問 題 〇 [發明欲解決之技術上課題] 1 1 本 發 明 藉 提 供 射 久 性 極 強 的 聚 合 物 使 用 琨 在 的 曝 光 i | 技 術 就 可 形 成 現 在 平 版 印 刷 X 程 的 折 像 界 限 (如0 .2 5 w m) 1 線 Μ 下 微 细 圖 型 間 隙 的 半 導 體 元 件 之 微 细 圖 型 間 隙 之 形 成 1 方 法 〇 1 1 [為解決課題之手段] 1 為 達 成 上 述 技 術 上 課 題 而 由 本 發 明 提 供 的 具 有 特 激 性 1 丰 導 體 元 件 微 细 匾 型 之 形 成 方 法 乃 包 括 著 形 成 在 半 I 導 體 基 板 上 所 形 成 的 所 定 蝕 刻 對 象 層 之 階 段 在 上 述 蝕 J ， 刻 對 象 層 上 形 成 蝕 刻 阻 擋 層 _ 形 成 使 上 述 蝕 刻 胆 擋 層 的 1 1 ―*1 部 份 領 域 露 出 的 光 P且 1SI 圖 型 之 階 段 在 上 述 半 m 體 基 板 1 I 5- 1 1 1 1 本紙乐尺度適用中國國家標準（CNS >A4規格（210X297公釐） ^36929 A7 B7 五、發明説明（< ) 加諸偏流電源的階段；邊蝕刻上述所露出的蝕刻阻擋層 而邊在上述被蝕刻的阻擋曆及光砠匾型側壁形成非揮發 性聚合物之階段；和將上述光阻圖型及上述非揮發性聚 合物作為蝕刻胆擋層而蝕刻上述蝕刻對象層，使蝕刻對 象層間的間隔為最小化的階段。 里獨或混合使用和光诅内的碳（Carbon)成份反應而易 使發生聚合物的氣體（例如，Hrr、CF4.C-F糸 列氣體，CHF3WC-H-F系統氣體）形成的電漿所構成的各 種物質中，儘管帶電離子等人射矽層，矽氧化膜，矽氮 化膜等底膜而引起敗亂（Scattering),此時所人射的雜 子等和底膜的Si、0、N等成份及光阻的碳成份反應而使 能發生非揮發性聚合物。 這種非揮發性聚合物被蒸鍍於光阻圖型的表面（主要 為側壁部份）使增加光阻圔型的大小，隨著能使光阻圖 型間的空間相對地減少。 非揮發性聚合物不僅僅是光姐圚型的表面而已，且蒸 鍍於所露出的蝕刻對象層表面，因此.被蒸鍍於蝕刻對 象層表面的聚合物在後鏞的蝕刻製程作為蝕刻砠擋曆產 生作用而使製程愈趨困難，所以蒸鍍聚合物時重要的是 ,Μ選擇性只蒸鍍光15且圖型及蝕刻阻擋層的側壁部份般 腌工者。 為以選擇性蒸鍍聚合物所需，藉為聚合物蒸鍍所需的 電漿形成時，對於放置晶片的電極加諸鬣偏流電源而使 所入射的離子強化其直進性，亦即，在藉使增加離子能 本紙張尺度適用中圉國家標準（CNS ) Α4規格（210Χ297公釐） ---------^------1Τ------^ (請先閱讀背面之注意事項再填寫本頁) 經漪部中央標準局負工消费合作社印" 經滴部中决標率局員工消費合作社印聚 ^3692 9 . A7 B7 五、發明説明（） 量而露出的触刻姐擋層表面抵接具有強能量的皤子，而 使該部份不被蒸鍍聚合物，使能只在光阻圖型的側壁部 位集中蒸鍍。 實際上，並非在蝕刻對象層的表面未能蒸鍍聚合物， 而是和該蒸鍍同時被人射的離子所分解掉使然。 從而，如欲將這種原理實際適用於平版印刷工程者箱 要研究對於考處蝕刻裝備特性的選擇性聚合物蒸鍍的條 件。 以下，介紹本發明的理想寅施例，κ利在本發明所鼷 的技術領域只具有通常智識者，更可容易實施本發明。 所添附的第4a圖及第4b圓係使用（18「及《2氣體的聚合 物蒸鍍後的電子顯微鏡照片。 如圖所示即可明白，在光砠圖型（PR)的側壁蒸鍍聚合 物（Polymer)而全體性的圍型線寬短袖時（參閱第4a圖） 從200〇X到3450&,長軸時（參閲第4b_)即明確地從6500A 增加到8100&。而且，藉調節聚合物蒸鍍畤間而可容易調 整圈型的線寬。 所添附的第5a圖及第5b圖係以蝕刻姐擋層蝕刻在其側 壁蒸鍍聚合物的光砠圖型的触刻龃擋層之電子顯微鏡照 H.如圖示即可明白，短軸時（參閲第5a圖）及長軸時（ 參閲第5b圖）兩種都較約粹的光阻圖型的線寬增大其線 寬，隨著減少圖型間隙的線寛。 在此，箱於被蝕刻而形成的鼷型線寬較諸第4a圖及第 4b圔所示的線寬（PR + Po丨yner)為小，這是因為光姐圖型 本紙張尺度適州中國國家標準（CNS ) A4規格（210X297公釐） ---------^------11---r-- (諳先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印^ 43S92 9 A7 B7 五、發明k明（k ) 側壁的聚合物不能全部作為姐攉壁作用所致。 而且，圈形的下部較上部形成得大，埴是起因於乾式 鈾刻時通常發生的聚合物之影轚。 如果和第la圖及第lb圖相較第4a圄及第5a圖所示的光 姐匾型及被触刻的圖型者，即實腌本發明時可獲得大略 1 000AM上的線寬收益，畢竟意味著可使圈型間隙的埭寬 減少1000AM上。 所添附的第6a圖係繪示有顒本發明一實施例的自我排 列接觴的形成製程，K下參閲圖示鼷說明其製程。 首先如第6a匾在矽基板30上透過一連串電晶體形成製 程，在具備有側壁隔板（31)及屏蔽氧化膜（32)的閛極33 所形成的下部構造全體依序蒸鍍自我排列覲墊用的聚矽 膜（34)及屬於反射防止膜（或蝕刻阻描層）的矽氮化膜（3 5卜 接著在矽氮化膜35上都形成了為形成自我排列襯墊用 的光阻圖型（36)。此時，務使光阻圓型（36)間的間隙能 成為0.30UB程度般加Μ形成，而考處下部靥的種類及 聚合物蒸鍍標的使用溶解抑制型i -媒光阻或化學放大型 遠紫外線（DUV)光胆而形成光阻團型（36)。在第7a國獪 示如上述般形成光阻匾型（36)構造之電子顯撤縝（SEM) 照片。 接著，如第6b匾所示在光阻團型（36>的側轚蒸鍍非揮 發性聚合物（37)。非揮發性聚合物（37)的蒸鍍係在反應 性離子蝕刻（RIE)方式的蝕刻裝備内形成時，使用HBr氣 本紙張尺度適用中國國家橾準（CNS ) Α4現格（210Χ 297公釐） ---.-------私衣------1Τ-----|線， {#先閱讀背面之注意事項再填湾本頁} 經滴部中央標準局員工消费合作社印聚 6 S A7 A. / __B7 __五、發明説明（7 ) 體而形成電漿，設定小室（Cha*ba)的壓力為1至100·Τ· 電極及室莖的溫度為-30至+80¾範圍，將500〜2000W的 偏流電源附加於晶片側的電極而在露出的下部層表面不 蒸鍍非揮發性聚合物（37),使其只在光阻園型（36)的側 壁以選擇性的蒸鍍。 此時，在非揮發性聚合物（37 >的蒸鍍遇程消耗矽氮化 瞑（35).露出了聚矽膜（34)。然而，藉由調節非揮發性 聚合物（37>的蒸鍍厚度而可達成聚矽襯墊（34)的媒寬控 制。 將此時的SEM照片表示於第7b圔。 其次如第6c圈所示，將蒸鍍在光姐画塱（36)及其側壁 的非揮發性聚合物（37)作為蝕刻驵描層，賴K乾式蝕刻 »於蝕刻對象暦的聚矽膜（34)形成聚矽襯墊（34)後，去 除光阻國型（26)。此時，乾式蝕刻可在非揮發性聚合物 (37)的蒸鍍時所使用的装備內就地（in-situ)形成。 將此時的SEH照片表示於第7c圖。由圈式即可明白不 會發生聚矽讕垫（34)間的電橋。 接著第6d圖係表示在聚矽襯墊34接觸了位元線（38)及 轚荷槠存罨極（39)的狀態，不僅僅是不會發生聚矽襯墊 34間的罨橋，且因增加聚，矽襯墊（34)的媒寬，藉可確 保充份的重叠限度，故也不會發生闸極（33)和聚矽襯墊 (34>間的電橋。本發明的符號40、41係分別表示各層間 的絕緣瞑。 附第8围係表示按本發明其他實腌例所形成的自我排 -9- ti I t^i - - I I I I-I - 1— I -- - - -- X I - - I — - - - n .: (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 經濟部中央標準局員工消費合作社印製 43692 9 A7 B7五、發明説明（J ) 列襯墊的剖面構造之電子顯微鏡照片，圖示的構造係表 示在自我排列襯墊用聚矽膜的上部作為蝕刻姐擋層形成 靨於反射防止膜的氮化膜，在其上部形成光阻匾型後， 適用本發明在光咀圖型側壁蒸鍍非揮發性聚合物起進行 蝕刻Μ後的狀態。 在本實腌例中非揮發性聚合物的蒸鍍及聚矽膜的蝕刻 係利用ICP方式的臑於聚矽鈾刻裝備的La· Research公 司的TCP-9408,選擇性聚合物蒸鍍係Μ如下的條件完成。 Kl:10至10:1的比例混合HBr^N2氣體形成電漿，設定 小室的壓力為1至50·Τ,電極溫度為-30至+80t：的範圔， 由於設定源極電源為100Κ至6〇〇tf,偏滾電源為300W以下 的範圍而在被露出的下部層表面幾無蒸鍍非揮發性聚合 物的緣故，故得Μ選擇性只集中於光咀圔形的側壁蒸鍍。 由圖式即可明白，其聚矽襯墊的線寬較諸上述第3圔 增加了 1 000&以上。 本發明藉Μ調節聚合物的蒸鍍厚度而可達成圖型的線 寛控制，由於如附第9圖所示在特定範圍聚合物蒸鍍時 間（亦即，電漿露出時間）和線寬增加份量在於正比例關 係，故藉以調節聚合物露出時間就可容易控制下部暦圓 型的線寬。 在此.得明白聚合物蒸鍍時間為100秒鐘時，媒寬會急 剌增加，這是因為光姐圖型的下部層的氮化膜（蝕刻防止 膜）在聚合物蒸鍍過程中全部被蝕刻而路出存在於其下部 的聚矽膜使得增加聚合物蒸鍍速度所致。 -10- ---------餐------ΐτ------.^ (請先閱讀背面之注意事項再填寫本頁} 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 3 6 S ^ ； w A7 B7 經濟部中央標皁局貝工消費合作社印裝 五、發明説明（ 9 ) 1 1 從 而 « 如 果 調 節 下 部 層 的 種 類 及 厚 度 者 * 即 可 容 易 控 J 1 I 制 所 需 的 圖 型 線 寬 〇 1 I Μ 上 所 說 明 的 本 發 明 不 會 受 制 於 X *. 刖 述 實 腌 例 及 所 附 的 請 先 1 1 圖 式 » 對 於 在 本 發 明 所 屬 的 技 術 領 域 擁 有 通 常 智 識 者 而 閱 it 1 背 1 3 t 諒 必 明 白 可 在 不 脫 離 本 發 明 的 技 術 性 思 想 範 圍 内 做 之 I 注 j 各 種 代 替 * 變 形 及 變 更 〇 意 拳 1 例 如 9 在 前 述 實 施 例 雖 為 形 成 面 園1 型 作 為 反 射 防 止 膜 而 項 再 1 填 1 使 用 了 矽 氮 化 m 場 合 的 一 例 說 明 f 但 矽 氮 化 m 並 非 不 可 寫 木 裝 頁 | 或 缺 〇 1 而 且 * 前 述 本 發 明 的 微 细 ISI 画 型 間 隙 的 形 成 不 只 限 於 接· 1 I m 孔 電 荷 儲 存 電 極 及 電 極 襯 塾 等 圖 型 形 態 〇 1 1 [發明之效果] ί 訂 刖 述 本 發 明 乃 使 用 現 在 使 用 中 的 裝 備 及 技 術 就 較 可 容 1 | 易 實 琨 平 版 印 刷 製 程 的 界 限 (如0 .25 a t n )以下的線寬， 也 1 1 有 容 易 控 制 其 線 寛 的 優 點 〇 而 且 f 本 發 明 即 視 其 應 用 方 1 I 法 而 藉 滅 少 圖 型 間 的 不 必 要 空 間 9 實 有 因 確 保 重 曩 限 度 1 線 而 防 止 誤 排 列 的 效 果 〇 1 [圄式之簡單說明] 1 | 第la圖及第lb圖係為考量有關習用技術的平版印 刷 工 1 程 的 電 子 顯 微 鏡 (SEH)的照Η圖。 1 1 第 2a 回 WBt 至 第 2c IBf WM 係 有 闞 習 用 技 術 的 白 我 排 列 接 觸 的 形 1 1 成 工 程 圖 〇 1 1 第 3 圖 係 有 闞 習 用 技 術 的 我 排 列 襯 墊 蝕 刻 後 的 電 子 1 1 顯 微 圄 照 Η 圖 〇 1 I -1 1- 1 1 1 1 本紙張尺度適用中圉國家標準（CNS ) A4規格（210X297公釐） 436929 A7 B7 五、發明説明（、。） 第4a圖及第4b圖係有翮本發明的聚合物蒸锻後的電子 顯微鏡照片圖。 第5a_及第5b_係有闞本發明的圖型触刻後的電子顯 微鏡照片圖。 第6a圖至第6d圖係有關本發明一實豳例的自我排列接 觸形成的過程圖。 第7a圈至第7c圖係分別為上述第2a_至第2c^的電子 顯微鏡照片圖。 第8圖係有闞本發明其他實胞例的聚矽襯塾独刻後的 電子顯撤鏡照片圖。 第9匾係表示隨著聚合物蒸鍍時間的圖型線寛博加部 份的曲線圖。 [符號之說明] 30:矽基板 31:側壁隔板 32:屏蔽氧化膜 33:閘極 34:聚矽膜（聚矽襯墊）35:矽氮化膜 36:光P且圄型 37:非揮發性聚合物 38:位元線 39:電荷儲存電極 40、41;層間絕緣膜。 狀衣 .iT-------0 (諳先鬩讀背面之注意事項再填寫本頁) 經漪部中央摞準局員工消費合作社印聚 -12- 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐）This should be the limit of the refractive power of the K r F light source. Using the K r F light source to form a fine pattern at 0.25 μm β steadily, K is considered impossible because of the limit of the wavelength. The attached la_ and lb_ have conventional techniques for investigation. Electron microscopy (SEM) photographs of the printing process. First, the first plaque indicates a state where a photoresist pattern is formed by patterning a polysilicon film formed on the lower part of the ytterbium, and the U-th plaque indicates the pattern of a photo sister pattern as an etching barrier Electron microscope (SEM) photograph of a polysilicon film cross section. As shown in the figure, it can be understood that the photoresist pattern and the polysilicon film formed on the layer to be etched are almost the same 2200A line. In the actual process, it is almost impossible for K to have stable and repeatable performance. ~ 3 " This paper size applies to China National Standard (CNS) A4 specification (2 丨 OX297 mm) --------- ¾ 丨; ----- ΐτ --- L --—— (Please read the precautions on the back before filling this page) Printed by the Central Standards Bureau of the Ministry of Standards and Industry, Printed and Collected by the Consumers Cooperative 43692 9 A7 B7 V. Description of the Invention (>) 0.25wm DRAM process, as a way to overcome the update (Refresh) A method to solve the problem that the process limitation when the hole is formed is insufficient. It is a method of forming a self-aligned pad connected to the bonding layer and connecting the self-aligned pad when the contact hole is formed through the read-back. . The attached diagrams 2a to 2c_ show the self-aligned contact formation process related to conventional techniques. First, the 2a_ series is formed on a silicon substrate (10) through a series of transistors. For the entire lower structure of the gate (13) having a sidewall spacer (11) and a shielding oxide film (12), it is self-aligned by evaporation. The polysilicon film (14) for pads and the nitride film (15) for anti-reflection are shown in a state where a photo-plaque (16) is formed in order to form a self-aligned pad on the top. At this time, the dashed line M is used as a reference to indicate a state of ensuring a gap of 0.25 ubK between the light sister patterns (16) on the right side, and the dashed line M is used as a reference to assume that there is a gap between the light 1¾ patterns (16) on the left side 0.25 «m Μ At the following time, the photoresist pattern (16) (part A) was not formed correctly due to the refractive index limit of the exposure source. Next, Fig. 2b shows the photoresist pattern (16) selected to etch the nitride film (15) and polysilicon film (14) and form a self-aligned gasket. The bark state of the interlayer insulating film (17) is formed on the upper part of the structure. Fig. 2c is a diagram showing the state where the bit line (18) and the charge storage electrode (19) are connected on the self-aligned pad. The A part of the figure does not form the light sister circle type (16) correctly, which causes the bridge between the self-aligned pads (part B). Moreover, if you want to fully ensure the gap of the light sister pattern (16), it will Reduce the size of this paper to apply Chinese Standard (CNS) A4 size (210X29? Mm) --------- ^ ------ ^ ------ line (谙 read the back first Please pay attention to this page before filling in this page] ^ 36929 A7 B7 Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (々) 1 1 I arrange the line width of the pads (see SEM photos in Figure 2) and Reduce the limit of heavy β 1 1 »Therefore > The bridge (part 1 C) between the actual gate (13) and the self-aligned pad is triggered Probable problems. ○ Please 1 1 Schematic symbol 20 indicates the interlayer insulation film. ○ This is to overcome the problem of m-printing, reading, and backing. 1 The new generation of printing works. The lithography technology using the X-ray for the exposure source> but there is no equipment that has been commercialized for the implementation of this project, etc. There are still many technical limitations 0 items and 1 I as mentioned above i have not yet The photoresist can be used to form a stable 0.25 micron plaque-shaped technical page I. Although it is disclosed in U.S. Patent No. 5,476,807, the polymer is formed using CF4 and chf3 gas. The photoresist pattern is used as an etching shield, but since 1 1 the polymer does not have sufficient durability in the subsequent etching process > i order 1 | it could not be completed Problems as the role of etching. 0 [Technical issues to be solved by the invention] 1 1 The present invention provides an extremely long exposure polymer using the exposure i | technology to form the fold limit of the current lithography X-path ( Such as 0.2 5 wm) 1 Formation of fine pattern gaps of semiconductor elements with fine pattern gaps under line M 1 Method 〇1 1 [Means for solving problems] 1 In order to achieve the above technical problems, the present invention has The method for forming the ultra-fine plaque of the 1st-rich conductor element includes forming a predetermined etching target layer formed on a semi-I conductor substrate, and forming an etching barrier layer on the etching target layer and the etching target layer. 1 1 ― * 1 part of the bile barrier is exposed to light P and the stage of the 1SI pattern is on the above-mentioned half-m substrate 1 I 5- 1 1 1 1 This paper scale is applicable to the Chinese national standard (CNS > A4 size (210X297 mm) ^ 36929 A7 B7 V. Description of the invention (<) The stage of adding bias current power; while etching the above exposed A step of etching the barrier layer while forming a non-volatile polymer on the etched barrier calendar and the photo-plaque-type sidewall; and using the photo-resist pattern and the non-volatile polymer as an etching barrier layer to etch the etching The target layer is a step for minimizing the interval between the layers to be etched. Lithium or a mixture of various substances composed of plasma formed by reacting with the carbon component in the light curse and easily causing polymer gas (for example, Hrr, CF4.CF queue gas, CHF3WC-HF system gas) In spite of the fact that charged ions, such as silicon layers, silicon oxide films, silicon nitride films, and other underlying films cause scattering, at this time, the injected heterodyne and the Si, 0, N components of the underlying film And the carbon component of the photoresist reacts to enable the generation of non-volatile polymers. This non-volatile polymer is vapor-deposited on the surface of the photoresist pattern (mainly the side wall portion) to increase the size of the photoresist pattern, as the space between the photoresist patterns can be relatively reduced. The non-volatile polymer is not only a photo-etched surface, but is vapor-deposited on the exposed surface of the etching target layer. Therefore, the polymer vapor-deposited on the surface of the etching target layer is used as an etching process in the subsequent etching process. The effect of the calendar makes the process more and more difficult, so it is important when the polymer is evaporated that the M selectively vaporizes only 15 light and the pattern and the sidewall portion of the etching barrier layer are like pickles. In order to selectively vaporize the polymer, when the plasma required for the polymer vapor deposition is formed, the electrode placed on the wafer is added with a bias current power source to strengthen the incident ions' straightness, that is, in the If the ionic energy is increased, the paper size applies the China National Standard (CNS) A4 specification (210 × 297 mm) --------- ^ ------ 1T ------ ^ (please first Read the notes on the back and fill in this page) Printed by the Central Standards Bureau of the Ministry of Economic Affairs and the Consumer Cooperatives of the Central Bureau of Standards &Quotations; The exposed surface of the barrier layer contacts the mule with strong energy, so that the part is not vapor-deposited with polymer, so that concentrated vapor deposition can be performed only on the sidewall portion of the photoresist pattern. Actually, the polymer is not vapor-deposited on the surface of the layer to be etched, but is decomposed by human-emitted ions at the same time as the vapor deposition. Therefore, if this principle is to be practically applied to a lithographic engineer's box, the conditions for selective polymer evaporation for the characteristics of etching equipment should be studied. In the following, the ideal embodiment of the present invention will be described. In the technical field of the present invention, only those with ordinary knowledge can be used, and the present invention can be easily implemented. The attached Figures 4a and 4b are electron microscope photographs after polymer vapor deposition using 18 ″ and “2 gas. As can be seen from the figure, it can be understood that the photodeposition on the sidewall of the photo pattern (PR) Polymer (Polymer) and overall sleeve line width short sleeves (see Figure 4a) from 200X to 3450 &, the long axis (see 4b_) clearly increased from 6500A to 8100 & and The line width of the circle can be easily adjusted by adjusting the polymer evaporation interval. The attached Figures 5a and 5b are based on the contact pattern of the photoresist pattern of the polymer vapor-deposited on the sidewalls by the etching layer. Photograph of the electron microscope engraved with the barrier layer H. As shown in the figure, it can be understood that the short axis (see Figure 5a) and the long axis (see Figure 5b) are both more photoresistive types. The line width increases its line width, and as the line gap of the pattern gap decreases. Here, the line width of the line formed by the etching of the box is larger than the line widths shown in Figures 4a and 4b (PR + Po丨 yner) is small, this is because the paper size of the light sister pattern paper is suitable for the China National Standard (CNS) A4 specification (210X297 mm) --------- ^ ------ 11-- -r-- (read first Note on the back, please fill out this page again.) Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^ 43S92 9 A7 B7 V. Invention of the polymer of the side wall (k) cannot be all caused by the role of the side wall. The lower part is larger than the upper part, and the plutonium is caused by the polymer that usually occurs when dry uranium engraving. If compared with the la and lb diagrams, the optical plaques shown in Figs. 4a and 5a and Those who are engraved with the pattern can obtain a line width gain of approximately 1 000 AM when the invention is actually cured, after all, it can reduce the width of the loop gap by 1000 AM. The attached Figure 6a shows觞 The formation process of the self-aligned junction according to an embodiment of the present invention is described below with reference to the diagram K. The process is first described in FIG. 6a through a series of transistor formation processes on a silicon substrate 30, and provided with a sidewall spacer ( 31) and the shield electrode (32) formed by the 閛 electrode 33. The entire lower structure is sequentially vapor-deposited with a polysilicon film (34) for self-aligned 觐 pads, and silicon nitrogen, which is an antireflection film (or an etch resist). Chemical film (3 5 5 b is then formed on the silicon nitride film 35 Form a photoresist pattern (36) for self-aligned gaskets. At this time, make sure that the gap between the photoresist circular patterns (36) can be about 0.30UB, and add M to determine the type and polymer of the lower part. The evaporation target uses a dissolution-inhibiting i-dielectric photoresist or chemically amplified far-ultraviolet (DUV) photobilitizer to form a photoresist group (36). In country 7a, it is shown that a photoresist plaque is formed as described above (36) A structured electron display (SEM) photograph. Next, as shown in plaque 6b, a non-volatile polymer (37) was vapor-deposited on the side of the photoresist type (36>). When the non-volatile polymer (37) is vapor-deposited in an etching equipment using reactive ion etching (RIE), HBr gas is used. The paper size is applicable to China National Standard (CNS) A4 (210 × 297 mm). ) ---.------- Private clothing ------ 1Τ ----- | line, {#Read the notes on the back before filling in this page} Employees of the Central Standards Bureau Consumer Cooperative Printing Poly 6 S A7 A. / __B7 __ V. Description of the invention (7) to form a plasma, set the pressure of the chamber (Cha * ba) to 1 to 100 · T · The temperature of the electrode and the stem of the chamber is- In the range of 30 to + 80¾, a 500 ~ 2000W bias current power supply is attached to the electrode on the wafer side, and the non-volatile polymer (37) is not vapor-deposited on the exposed lower layer surface, so that it is only used in the photoresistor type (36). The sidewalls are selectively evaporated. At this time, the polysilicon film (34) was exposed during the evaporation process of the non-volatile polymer (37 >). However, by adjusting the non-volatile polymer (37 > The thickness of the polysilicon liner (34) can be controlled by the thickness of the vapor deposition. The SEM photograph at this time is shown in Fig. 7b 其次. Next, as shown in circle 6c, the vapor deposition is performed on the photo of the sister (36) and The non-volatile polymer (37) on the side wall is used as an etching layer, and the dry etching process is performed on the polysilicon film (34) of the object to be etched. After forming a polysilicon liner (34), the photoresist type (26) is removed. At this time, dry etching can be formed in-situ in the equipment used for vapor deposition of the non-volatile polymer (37). The SEH photograph at this time is shown in Fig. 7c. It can be understood that the bridge between the polysilicon pads (34) will not occur. Next, Fig. 6d shows the state where the polysilicon pads 34 are in contact with the bit line (38) and the anode electrode (39). Not only does the bridge between the polysilicon pads 34 not occur, but because of the increase in poly, the media width of the silicon pad (34) can ensure a sufficient overlap limit, so the gate (33 ) Polysilicon pads (34 > bridges. Symbols 40 and 41 of the present invention indicate insulation between the layers. The eighth enclosure indicates the self-discharge formed according to other examples of the present invention-9-ti I t ^ i--III II-1— I----XI--I —---n.: (Please read the precautions on the back before filling out this page) This paper size applies Chinese national standards ( CNS) A4 size (210X 297 mm) Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 43692 9 A7 B7 V. Electron micrograph of the cross-section structure of the gasket of the invention (J), the structure shown in the figure is shown in the self The upper part of the polysilicon film for the lining gasket is used as an etching barrier layer to form a nitride film on the anti-reflection film. After a photoresist plaque is formed on the upper part, the present invention is applicable to vapor deposition of non-volatile polymerization on the sidewall of the optical nozzle pattern. The material is in the state after being etched. In this example, the vapor deposition of non-volatile polymer and the etching of polysilicon film are based on TCP-9408 of La · Research Co., Ltd., which is equipped with polysilicon engraving equipment using ICP method. The selective polymer evaporation system M is completed under the following conditions: K1: 10 to 10: 1 ratio Mix the HBr ^ N2 gas to form a plasma. Set the pressure in the cell to 1 to 50 · T and the electrode temperature to -30 to + 80t. Fan: Since the source power is set to 100K to 600tf, the bias power is In the range below 300W, there is almost no evaporation of non-volatile polymer on the exposed lower surface. Therefore, the selectivity of M is only concentrated on the side wall of the nozzle. The line width of the silicon pad is increased by more than 1,000 & According to the present invention, the line thickness control of the pattern can be achieved by adjusting the vapor deposition thickness of the polymer, because the polymer vapor deposition time (that is, the plasma exposure time) and the line width are increased in a specific range as shown in FIG. 9 The weight is in a proportional relationship, so the line width of the lower round shape can be easily controlled by adjusting the polymer exposure time. Here it is understood that when the polymer deposition time is 100 seconds, the media width will increase sharply. This is because the nitride film (etch prevention film) of the lower layer of the light sister pattern is all during the polymer deposition process. The polysilicon film existing in the lower part by being etched out leads to an increase in the deposition rate of the polymer. -10- --------- Meal ------ ΐτ ------. ^ (Please read the notes on the back before filling out this page} This paper size applies to Chinese National Standards (CNS ) A4 size (210X297 mm) 3 6 S ^; w A7 B7 Printed by the Central Standard Soap Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, Co., Ltd. 5. Description of the invention (9) 1 1 Thus «if the type and thickness of the lower layer are adjusted * namely It is easy to control the line width of the pattern required for the J 1 I system. The present invention described on the 1 M will not be subject to X *. The actual examples and the attached drawings are shown in the 1 1 diagram » The technical field to which the invention belongs has ordinary savvy persons. It is important to understand that it can be done within the scope of the technical idea of the present invention. I Note j Various substitutions * Variations and changes. Although the foregoing embodiment is to form a surface circle type 1 as an anti-reflection film, Fill 1 An example of the case where silicon nitride m is used. F But silicon nitride m is not a non-writable wooden page | or missing 〇1 and * The formation of the fine ISI pattern gap of the present invention is not limited to the connection of 1 I m holes Charge storage electrodes and electrode linings, etc. 〇1 1 [Effects of the invention] It is stated that the present invention is more tolerable by using the equipment and technology currently in use 1 | 0.25 atn) or less, 1 1 has the advantage of being easy to control its line size. 0 and f The present invention uses the 1 I method to eliminate unnecessary space between patterns. 9 There is a reason to ensure The effect of repeating the limit 1 line to prevent misalignment 〇1 [Simplified description of the formula] 1 | Figures la and lb are for consideration of related conventional techniques Electronic engineering a lithographic printing process microscopic mirror (seh) according Η of FIG. 1 1 2a back to WBt to 2c IBf WM is a self-aligned contact pattern with conventional technology 1 1 Engineering drawing 〇1 1 Figure 3 is a lined electron after etching with conventional technology 1 1 Photomicrographs Figure 〇1 I -1 1- 1 1 1 1 This paper size applies to China National Standard (CNS) A4 (210X297 mm) 436929 A7 B7 V. Description of the invention (, ...) Figure 4a and Figure 4b is an electron micrograph of the polymer of the present invention after steam forging. Figures 5a_ and 5b_ are the photomicrographs of the electron microscope after the pattern of the present invention is touched. Figures 6a to 6d are diagrams showing the process of forming self-aligned contacts according to an example of the present invention. Circles 7a to 7c are electron microscope photographs of the above 2a to 2c ^, respectively. Fig. 8 is a photomicrograph of an electronic display microscope with a polysilicon liner etched by other cell examples of the present invention. The ninth plaque is a graph showing a portion of the pattern line with the polymer deposition time. [Explanation of symbols] 30: silicon substrate 31: sidewall spacer 32: shielding oxide film 33: gate 34: polysilicon film (polysilicon liner) 35: silicon nitride film 36: light P and 圄 type 37: non Volatile polymer 38: bit line 39: charge storage electrodes 40, 41; interlayer insulating film.衣衣 .iT ------- 0 (谙 Please read the precautions on the back before filling this page) Printed by the Consumers' Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs-12- This paper size applies to Chinese national standards (CNS ) A4 size (210 X 297 mm)